JP2018074575A - サブ波長厚さの圧電層を備えた弾性波デバイス - Google Patents

サブ波長厚さの圧電層を備えた弾性波デバイス Download PDF

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Publication number
JP2018074575A
JP2018074575A JP2017202561A JP2017202561A JP2018074575A JP 2018074575 A JP2018074575 A JP 2018074575A JP 2017202561 A JP2017202561 A JP 2017202561A JP 2017202561 A JP2017202561 A JP 2017202561A JP 2018074575 A JP2018074575 A JP 2018074575A
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layer
acoustic wave
wave device
thickness
piezoelectric layer
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Japanese (ja)
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JP2018074575A5 (enExample
Inventor
令 後藤
Rei Goto
令 後藤
チェ ツォウ、
Jie Zou
チェ ツォウ、
弘幸 中村
Hiroyuki Nakamura
弘幸 中村
チュン シン ラム、
Chun Sing Lam
チュン シン ラム、
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
JP2017202561A 2016-10-20 2017-10-19 サブ波長厚さの圧電層を備えた弾性波デバイス Pending JP2018074575A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662410804P 2016-10-20 2016-10-20
US62/410,804 2016-10-20
US201662423705P 2016-11-17 2016-11-17
US62/423,705 2016-11-17

Publications (2)

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JP2018074575A true JP2018074575A (ja) 2018-05-10
JP2018074575A5 JP2018074575A5 (enExample) 2020-11-26

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US (4) US10778181B2 (enExample)
JP (1) JP2018074575A (enExample)
KR (1) KR20190058680A (enExample)
CN (1) CN109891612A (enExample)
DE (1) DE112017005316B4 (enExample)
GB (2) GB2600838A (enExample)
SG (1) SG11201903365SA (enExample)
TW (1) TWI752102B (enExample)
WO (1) WO2018075682A1 (enExample)

Cited By (12)

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JP2019201345A (ja) * 2018-05-17 2019-11-21 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
JP2020202564A (ja) * 2019-06-12 2020-12-17 ツー−シックス デラウェア インコーポレイテッドＩＩ−ＶＩ Ｄｅｌａｗａｒｅ，Ｉｎｃ． 電極画定された非サスペンデッド音響共振器
WO2021060521A1 (ja) * 2019-09-27 2021-04-01 株式会社村田製作所 弾性波装置
WO2021060522A1 (ja) * 2019-09-27 2021-04-01 株式会社村田製作所 弾性波装置
WO2021060523A1 (ja) * 2019-09-27 2021-04-01 株式会社村田製作所 弾性波装置及びフィルタ装置
WO2021200835A1 (ja) * 2020-03-30 2021-10-07 株式会社村田製作所 弾性波装置
WO2022019170A1 (ja) * 2020-07-22 2022-01-27 株式会社村田製作所 弾性波装置
US11451210B2 (en) 2018-01-26 2022-09-20 Taiyo Yuden Co., Ltd. Acoustic wave device, filter, and multiplexer
US11595019B2 (en) 2018-04-20 2023-02-28 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and multiplexer
US11722117B2 (en) 2019-12-06 2023-08-08 Taio Yuden Co., Ltd. Acoustic wave resonator, filter, multiplexer, and wafer
WO2023248636A1 (ja) * 2022-06-24 2023-12-28 株式会社村田製作所 弾性波装置
WO2025211191A1 (ja) * 2024-04-05 2025-10-09 株式会社村田製作所 弾性波装置および弾性波フィルタ

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WO2018116602A1 (ja) * 2016-12-20 2018-06-28 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置
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WO2018198952A1 (ja) * 2017-04-24 2018-11-01 株式会社村田製作所 フィルタ装置およびその製造方法
US11070193B2 (en) * 2017-11-24 2021-07-20 Murata Manufacturing Co., Ltd. Elastic wave device, radio-frequency front-end circuit, and communication device
WO2019172032A1 (ja) * 2018-03-08 2019-09-12 株式会社村田製作所 マルチプレクサ、高周波フロントエンド回路および通信装置
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CN119051623A (zh) * 2018-11-20 2024-11-29 株式会社村田制作所 提取器
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CN110113025B (zh) * 2019-04-28 2021-05-18 清华大学 一种便于射频前端集成的温度补偿声表面波器件及其制备方法与应用
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CN110138356B (zh) * 2019-06-28 2020-11-06 中国科学院上海微系统与信息技术研究所 一种高频声表面波谐振器及其制备方法
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CN110708035B (zh) * 2019-10-21 2022-04-01 中国电子科技集团公司第二十六研究所 温度补偿型声表面波器件的温补层上表层表面波抑制方法
CN112054777B (zh) * 2020-05-09 2024-11-15 诺思(天津)微系统有限责任公司 体声波谐振器组件及制造方法、滤波器及电子设备
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CN111988013B (zh) * 2020-08-31 2021-06-01 诺思(天津)微系统有限责任公司 温补滤波器优化方法和温补滤波器、多工器、通信设备
CN112217490B (zh) * 2020-10-22 2021-09-14 展讯通信（上海）有限公司 层状温补型声表面波谐振器与封装方法
CN112287584A (zh) * 2020-10-30 2021-01-29 西北工业大学 一种超薄平板波导设备及其设计方法
CN112600529A (zh) * 2020-12-18 2021-04-02 广东广纳芯科技有限公司 一种具有poi结构的兰姆波谐振器
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CN114531129A (zh) * 2022-02-22 2022-05-24 重庆邮电大学 一种双模声耦合表面波滤波器
CN114665006B (zh) * 2022-03-21 2025-04-18 中北大学 一种d15模式铁电单晶薄膜压电振动传感器及其制备方法
CN116094481B (zh) * 2023-04-12 2023-07-28 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置
CN116633307B (zh) * 2023-05-23 2024-09-10 无锡市好达电子股份有限公司 弹性波装置
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件
CN119298870B (zh) * 2024-12-09 2025-05-06 中国科学技术大学 一种声波谐振器及滤波器

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US10778181B2 (en) 2020-09-15
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