WO2018062319A1 - 電極箔及び電解コンデンサ - Google Patents
電極箔及び電解コンデンサ Download PDFInfo
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- WO2018062319A1 WO2018062319A1 PCT/JP2017/035058 JP2017035058W WO2018062319A1 WO 2018062319 A1 WO2018062319 A1 WO 2018062319A1 JP 2017035058 W JP2017035058 W JP 2017035058W WO 2018062319 A1 WO2018062319 A1 WO 2018062319A1
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- WIPO (PCT)
- Prior art keywords
- foil
- electrode foil
- depth
- etching
- capacitor
- Prior art date
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- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical class O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- SEACXNRNJAXIBM-UHFFFAOYSA-N triethyl(methyl)azanium Chemical compound CC[N+](C)(CC)CC SEACXNRNJAXIBM-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/04—Etching of light metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/035—Liquid electrolytes, e.g. impregnating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/0425—Electrodes or formation of dielectric layers thereon characterised by the material specially adapted for cathode
Definitions
- the present invention relates to an electrode foil provided in an electrolytic capacitor used in a so-called high frequency region of 100 kHz or higher.
- Electrolytic capacitors are composed of non-solid electrolytic capacitors in which the electrolyte is liquid, solid electrolyte capacitors in which the electrolyte is solid, electrolytes in liquid and solid, so that the dielectric film of the anode is in close contact with the counter electrode. And a bipolar electrolytic capacitor in which a dielectric film is formed on both electrodes.
- This electrolytic capacitor is formed by impregnating a capacitor element with an electrolyte.
- the capacitor element is formed by facing an anode foil formed of a dielectric film on a valve metal foil such as aluminum, and a cathode foil made of the same or other metal foil. And a separator is interposed between the anode foil and the cathode foil.
- the capacitance of the electrolytic capacitor is proportional to the surface area of the dielectric film.
- the electrode foil of the electrolytic capacitor is subjected to a surface expansion treatment such as etching, and the surface expansion portion subjected to the surface expansion treatment is subjected to a chemical conversion treatment to have a dielectric film having a large surface area.
- an electrochemical method is mainly used for etching.
- an alternating current is passed in a chloride aqueous solution such as hydrochloric acid or salt to form spongy etching pits on the surface.
- a direct current is passed in an aqueous chloride solution to form tunnel-like etching pits from the surface of the electrode foil toward the thickness center.
- An oxide film is formed on the etching layer in which the etching pits are formed by chemical conversion treatment or the like, but this oxide film has low flexibility and stretchability.
- the etching pits become deeper as the surface enlargement progresses, and when the surface area increases, the amount of the oxide film increases, and the flexibility and stretchability of the electrode foil tend to decrease.
- the electrode foil becomes hard due to a decrease in flexibility and stretchability of the electrode foil, and the electrode foil is bent and the winding length of the electrode foil that can be accommodated in the same capacity case is reduced. End up. If the winding length of the electrode foil is reduced, the capacitance of the electrolytic capacitor is reduced by the reduced amount.
- the electrode foil is made thick, for example, the number of electrode foils that can be stacked is reduced in a multilayer electrolytic capacitor, and the capacitance of the electrolytic capacitor is reduced by the reduced amount.
- the present invention uses an electrode foil capable of improving both the strength of the electrode foil and the thinness of the electrode foil and improving the capacity of the entire foil, and this electrode foil. It is to provide an electrolytic capacitor.
- an electrode foil according to the present invention has tunnel-like etching pits formed on the surface of the electrode foil, and the depth of the etching pits is 27 ⁇ m or less. .
- the depth of the etching pit is 12 ⁇ m or more and 27 ⁇ m or less.
- 27 ⁇ m is the limit of the deep zone to which sufficient charge is supplied in the frequency region of 100 kHz or higher.
- the increase rate of the capacitance is good according to the depth of the etching pit.
- the increase rate of the capacitance is slowed down with respect to the depth of the etching pits, but the benefit of deepening the etching pits can be obtained.
- the electrode foil can be thinned while leaving a sufficient remaining core, and a longer electrode foil can be accommodated in a case of the same capacity, thereby improving the capacity of the electrolytic capacitor. Can be made.
- An electrolytic capacitor including this electrode foil is also an embodiment of the present invention.
- the thickness can be reduced while leaving the remaining core portion sufficiently, and the strength per unit volume of the electrolytic capacitor can be maintained while maintaining the strength of the electrode foil. Capacity can be improved.
- FIG. 6 is a graph showing average values of capacitances obtained when the capacitor elements of Example 1 and Comparative Examples 1 to 4 are charged at each frequency.
- 3 is a graph showing capacitance when charging is performed at each frequency of capacitor elements of Example 1 and Comparative Examples 1 to 4. It is a graph which shows the relationship between the depth of an etching pit when it charges by 120 Hz and 100 kHz, and an electrostatic capacitance.
- the electrode foil is suitable for an electrolytic capacitor that is driven in a high voltage application and in a high frequency region of 100 kHz or higher, and is used for an anode foil, a cathode foil, or both of the electrolytic capacitor.
- the electrolytic capacitor is a non-solid electrolytic capacitor in which the electrolyte is a liquid and a dielectric film is formed on the anode foil, a hybrid electrolytic capacitor having a liquid and a solid as the electrolyte, and a dielectric film on both the anode foil and the cathode foil A bipolar electrolytic capacitor in which is formed.
- Electrode foil is a foil body made of valve metal.
- the valve metal is aluminum, tantalum, niobium, niobium oxide, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony, or the like.
- the purity is preferably about 99.9% or more for the anode foil and about 99% or more for the cathode, but may contain impurities such as silicon, iron, copper, magnesium, and zinc.
- This electrode foil is enlarged on both sides by etching.
- the expanded electrode foil has a large number of tunnel-like etching pits that are dug down from both sides of the electrode foil toward the thickness center and aligned.
- the tunnel-like etching pit is a cylindrical hole, and this electrode foil has a remaining core portion where the etching pit does not reach.
- This tunnel-like etching pit can be formed by chemical etching or electrochemical etching, and is formed, for example, by applying a direct current with an electrode foil as an anode in an acidic aqueous solution in which halogen ions are present.
- the acidic aqueous solution is, for example, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, sodium chloride, or a mixture thereof.
- the depth of this etching pit can be adjusted by the current application time. That is, the etching process is performed in a total of two processes, and in the first process, for example, the electrode foil is etched electrochemically with a direct current in an aqueous solution containing chlorine ions to form etching pits. In the second step, the already formed etching pits are enlarged by electrochemically or chemically etching the electrode foil in an aqueous solution containing, for example, nitrate ions or chlorine ions. The depth of the etching pit is affected by the current application time in the first step.
- Etch pit depth is 27 ⁇ m or less. This is because, in the frequency region of 100 kHz or more, the deep zone of more than 27 ⁇ m does not contribute to the increase in capacitance, but has a disadvantage that the remaining core portion is thinned or the electrode foil is thickened. Considering the reason, the etching pit can be expressed by an equivalent circuit in which resistances for each depth zone are connected in series in the depth direction, and capacitors in each depth zone are connected in series to the combined resistance up to the depth zone. . That is, the etching pit includes an RC circuit group of a resistance component and a capacitor component having a high resistance value according to the depth, and a charging speed is different between a shallow depth zone and a deep depth zone. In a depth zone of 27 ⁇ m or more, an alternating current of 100 kHz or more does not have a time constant R ⁇ C that is small enough to be charged and discharged.
- the depth of the etching pit is 12 ⁇ m or more and 20 ⁇ m or less, the increase rate of the capacitance with respect to the depth of the etching pit starts to slow down in the frequency region of 100 kHz or more, but the electrostatic pit is almost proportional to the depth of the etching pit. Capacity increases. Therefore, since the depth of the etching pit most efficiently leads to an increase in capacitance, from the viewpoint of efficiency, the depth of the etching pit is preferably 12 ⁇ m or more and 20 ⁇ m or less.
- the depth of the etching pit is 20 ⁇ m or more and 27 ⁇ m or less
- the capacitance is expected to increase with respect to the increase of the etching pit depth in the frequency region of 100 kHz or more. Therefore, from the viewpoint of capacitance, the depth of the etching pit is preferably 20 ⁇ m or more and 27 ⁇ m or less.
- the depth of the etching pit was specified by measurement by a chemical conversion film replica method.
- the chemical conversion film replica method is a method in which a chemical conversion film is applied to an enlarged electrode foil, an aluminum base is dissolved with an iodine-methanol solution, and the shape of etching pits is observed with a scanning electron microscope (SEM). .
- SEM scanning electron microscope
- the electrode foil has a dielectric film formed by chemical conversion treatment depending on the application.
- the dielectric film is formed by oxidizing the surface of the electrode foil including the inner wall surface of the etching pit.
- This dielectric film is typically formed by applying a voltage with the electrode foil as an anode in a buffer solution in the absence of halogen ions.
- the buffer solution include ammonium borate, ammonium phosphate, ammonium adipate, and organic acid ammonia.
- Electrolytic capacitor As an electrolytic capacitor using this electrode foil, a wound type non-solid electrolytic capacitor in which a capacitor element formed by winding an electrode foil is impregnated with an electrolytic solution will be described as an example. Also included are bipolar electrolytic capacitors, and multilayer capacitors.
- one or both of the capacitor elements have a dielectric film, and the electrode foil in which the depth of the etching pit is stopped to 27 ⁇ m or less is used as an anode foil and a cathode foil, and the anode foil and the cathode foil are interposed with a separator. It is made to wind in a cylindrical shape.
- the capacitor element is impregnated with the electrolytic solution, the anode terminal and the cathode terminal are drawn out.
- the anode terminal and the cathode terminal are connected to external terminals provided on a sealing body in which an elastic insulator such as a rubber plate is attached to the front and back surfaces of a hard substrate insulating plate such as a synthetic resin plate.
- condenser element is accommodated in the bottomed cylindrical exterior case, is sealed with a sealing body, and takes the aspect of a winding-type capacitor
- Separator is made of cellulose such as kraft, manila hemp, esparto, hemp, rayon, etc.
- Polyamide resins such as vinylidene resins, vinylon resins, aliphatic polyamides, semi-aromatic polyamides, wholly aromatic polyamides, polyimide resins, polyethylene resins, polypropylene resins, trimethylpentene resins, polyphenylene sulfide resins, acrylic resins, etc. These resins can be used alone or in combination.
- the solvent of the electrolytic solution is not particularly limited, but it is preferable to use ethylene glycol as the solvent of the electrolytic solution for high pressure applications, and other solvents may be used in combination.
- ethylene glycol as the solvent of the electrolytic solution for high pressure applications, and other solvents may be used in combination.
- monohydric alcohols, polyhydric alcohols, and oxyalcohol compounds are mentioned as a protic organic polar solvent. Examples of monohydric alcohols include ethanol, propanol, butanol, pentanol, hexanol, cyclobutanol, cyclopentanol, cyclohexanol, and benzyl alcohol.
- Polyhydric alcohols include ethylene glycol, ⁇ -butyrolactone, diethylene glycol, dipropylene glycol, 1,2-propanediol, glycerin, 1,3-propanediol, 1,3-butanediol, 2-methyl-2 , 4-pentanediol and the like.
- oxyalcohol compounds include propylene glycol, glycerin, methyl cellosolve, ethyl cellosolve, methoxypropylene glycol, and dimethoxypropanol.
- examples of aprotic organic polar solvents include amides, lactones, sulfolanes, cyclic amides, nitriles, and oxides.
- examples of amides include N-methylformamide, N, N dimethylformamide, N ethylformamide, N, N diethylformamide, N methylacetamide, N, N dimethylacetamide, N ethylacetamide, N, N-diethylacetamide, hexamethylphos Holic amide etc. are mentioned.
- Examples of cyclic amides include ⁇ -butyrolactone, N-methyl-2-pyrrolidone, ethylene carbonate, propylene carbonate, isobutylene carbonate, and isobutylene carbonate.
- Examples of the nitrile type include acetonitrile.
- Examples of oxides include dimethyl sulfoxide.
- solute of the electrolytic solution examples include ammonium salts, amine salts, quaternary ammonium salts, and quaternary salts of cyclic amidine compounds having an acid conjugate base as an anion component, which are usually used in electrolytic capacitors for driving electrolytes.
- amines constituting the amine salt include primary amines (methylamine, ethylamine, propylamine, butylamine, ethylenediamine, etc.), secondary amines (dimethylamine, diethylamine, dipropylamine, methylethylamine, diphenylamine, etc.), tertiary amines ( Trimethylamine, triethylamine, tripropylamine, triphenylamine, 1,8 diazabicyclo (5,4,0) undecene7, etc.).
- the quaternary ammonium constituting the quaternary ammonium salt includes tetraalkylammonium (tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, methyltriethylammonium, dimethyldiethylammonium, etc.), pyridium (1 methylpyridium, 1 ethyl pyridium, 1,3 diethyl pyridium, etc.).
- Examples of the cation constituting the quaternary salt of the cyclic amidine compound include cations obtained by quaternizing the following compounds.
- imidazole monocyclic compounds (1 methylimidazole, 1,2-dimethylimidazole, 1,4 dimethyl 2, ethylimidazole, imidazole homologues such as phenylimidazole, 1-methyl-2-oxymethylimidazole, 1-methyl-2 Oxyalkyl derivatives such as oxyethylimidazole, nitro and amino derivatives such as 1-methyl-4 (5) -nitroimidazole, 1,2-dimethyl-4 (5) -nitroimidazole), benzimidazole (1-methylbenzo Imidazole, 1-methyl-2-benzylbenzimidazole, etc.), compounds having a 2-imidazoline ring (1 methylimidazoline, 1,2-dimethylimidazoline, 1,2,4-trimethylimidazoline, 1,4-dimethyl-2- Ethyl imidazoli , 1-methyl-2-phenylimidazoline, etc.), compounds having a tetrahydropyrimidine ring (1
- Example 1 A capacitor element of Example 1 was prepared using an electrode foil having a tunnel-like etching pit depth of 27 ⁇ m as an anode foil. Specifically, an aluminum foil having an area of 20 mm ⁇ 20 mm and an electrode foil thickness of 125 ⁇ m was used as the anode foil. This anode foil was subjected to a two-stage etching process. In the etching process, in the first step, the aluminum foil was etched electrochemically with a direct current in an aqueous solution containing hydrochloric acid to form etching pits. In the second step, the aluminum foil was etched electrochemically or chemically in an aqueous solution containing nitric acid to enlarge the already formed etching pits.
- the electrode foil having the etching pits was subjected to chemical conversion treatment in an aqueous ammonium borate solution to form an oxide film layer on the surface.
- the depth of the etching pit was measured by the chemical film replica method, the depth of the etching pit was 27 ⁇ m.
- an aluminum foil having an area of 30 mm ⁇ 25 mm and an electrode foil thickness of about 20 ⁇ m was used as a cathode foil, and this cathode foil was subjected to an AC etching process to form a spongy etching pit on the surface.
- An aluminum lead wire having a neck covered with silicone was attached to the anode foil and the cathode foil. Two pieces of this cathode foil were prepared, and one piece of anode foil was overlapped with a 30 mm ⁇ 25 mm separator interposed between them by craft.
- the separator was impregnated with an electrolytic solution containing ethylene glycol as the main solvent and boric acid as the main solute. And the capacitor
- the capacitor elements of Comparative Examples 1 to 4 were manufactured in the same method and under the same conditions as the capacitor element of Example 1 except for the etching pit depth.
- Capacitance measurement 1 The capacitances of the capacitor elements of Example 1 and Comparative Examples 1 to 4 were measured.
- An LCR meter (Agilent Technologies, 4284A) was used for the measurement. In the measurement, the ambient temperature was 21 ° C., the alternating current level was 1.0 Vrms, and the measurement frequency was in the range of 1 Hz to 120 kHz. Charging at each frequency and measurement of capacitance were performed three times, and plotted on a graph with the horizontal axis representing frequency and the vertical axis representing capacitance. The results are shown in FIGS.
- the graph of FIG. 1 shows the result of Comparative Example 1
- the graph of FIG. 2 shows the Comparative Example 2
- the graph of FIG. 3 shows the Comparative Example 3
- the graph of FIG. 4 shows the Comparative Example 4
- the graph of FIG. 6 is a graph in which the average values of Example 1 and Comparative Examples 1 to 4 are plotted.
- Example 1 When measured at a frequency of 100 kHz, Example 1 averaged 0.97 ⁇ F, Comparative Example 1 averaged 1.09 ⁇ F, Comparative Example 2 averaged 1.05 ⁇ F, Comparative Example 3 averaged 1.07 ⁇ F, and Comparative Example 4 The average was 1.00 ⁇ F. That is, at the frequency of 100 kHz, although the etching pits of Example 1 are as shallow as 27 ⁇ m, the capacitance of Example 1 and the capacitances of Comparative Examples 1 to 4 are no longer changed to around 1.0 ⁇ F. .
- Example 1 when measured at a frequency of 120 kHz, Example 1 averaged 0.90 ⁇ F, Comparative Example 1 averaged 1.01 ⁇ F, Comparative Example 2 averaged 0.98 ⁇ F, Comparative Example 3 averaged 0.99 ⁇ F, and Comparative Example 4
- the average of 0.93 ⁇ F and the etching pit of Example 1 was shallow at 27 ⁇ m at a frequency of 120 kHz, but the capacitance of Example 1 and the capacitances of Comparative Examples 1 to 4 were around 0.95 ⁇ F. There is no change.
- Example 1 As described above, at the frequency of 100 kHz or higher, although the etching pit of Example 1 was as shallow as 27 ⁇ m, the electrostatic capacity of Example 1 and the electrostatic capacity of Comparative Examples 1 to 4 did not appear. As a result, in the frequency region of 100 kHz or more, when the depth of the etching pit is 27 ⁇ m or less, the entire area of the etching pit is efficiently charged / discharged, and the deep zone exceeding 27 ⁇ m contributes to the capacitance of the capacitor element. Indicates that it is not.
- an electrode foil having an etching pit depth of 27 ⁇ m or less can reduce the foil thickness while having a thickness of the remaining core that can be made to have good strength.
- the wound type electrolytic capacitor can accommodate more such electrode foils without increasing the size, and the laminated electrolytic capacitor can stack more electrode foils without increasing the size, It has a high electrostatic capacity.
- Example 2 The capacitor element of Example 2 in which the electrode foil having a tunnel-like etching pit depth of 20 ⁇ m is used as an anode foil, and the capacitor of Example 3 in which the electrode foil having a tunnel-like etching pit depth of 12 ⁇ m is used as an anode foil
- Capacitor elements of Example 4 in which an electrode foil having an element and a tunnel-like etching pit depth of 6 ⁇ m as an anode foil were produced by the same manufacturing method and the same conditions as in Example 1.
- Capacitance measurement 2 The capacitances of the capacitor elements of Examples 2 to 4 were measured under the same conditions as in Example 1 and Comparative Examples 1 to 4. The results are shown in FIG. 7 together with the average values of Example 1 and Comparative Examples 1 to 4.
- FIG. 7 is a graph in which the measurement results of Examples 1 to 4 and Comparative Examples 1 to 4 are plotted from 1 Hz to 100 kHz.
- FIG. 8 shows the relationship between the capacitance and the etching pit depth in each alternating current when an alternating current of 120 Hz and 100 kHz was passed through the capacitor elements of Examples 1 to 4 and Comparative Examples 1 to 4. Show.
- the capacitance does not change from 1 Hz to 100 kHz.
- the capacitance starts to decrease slightly in the high frequency region, and it can be seen from FIG. 8 that this is the starting point where a difference starts to occur between 120 Hz and 100 kHz.
- the capacitance at 100 kHz is 0.88 ⁇ F, which is the etching pit depth of 12 ⁇ m. This is equivalent to about 2.26 times that of 0.39 ⁇ F, which is the capacitance at 100 kHz.
- the capacitance at 100 kHz is 0.97 ⁇ F, which is the capacitance at 100 kHz when the etching pit depth is 12 ⁇ m. This is equivalent to about 2.49 times that of 0.39 ⁇ F.
- the increase rate of the capacitance with respect to the depth of the etching pit has started to slow down, but the capacitance according to the depth of the etching pit can be obtained efficiently. Can be confirmed. Further, it can be seen that when the depth of the etching pit is 20 ⁇ m or more and 27 ⁇ m or less, the increase rate of the capacitance with respect to the depth of the etching pit is slowed down, but the increase in the capacitance is sufficient as compared with that exceeding 27 ⁇ m.
- the thickness is 12 ⁇ m or more and 20 ⁇ m, and in terms of the strength and capacitance of the electrode foil, it is confirmed that 20 ⁇ m or more and 27 ⁇ m or less is desirable.
- a current having a frequency of only 100 kHz is described, but the present invention is not limited to this. Even when a current in which a waveform in a high frequency region having a frequency of 100 kHz or more and a waveform in a low frequency region having a frequency of less than 100 kHz are passed through the electrode foil of the present invention, the same effect as in the embodiment can be obtained. it can.
- Such a capacitor can be applied to a circuit corresponding to an increase in the switching frequency of a power semiconductor that has been used in recent years for an inverter circuit or the like, and contributes to high efficiency and miniaturization of a power converter.
- a current in which a frequency of 120 Hz and a frequency of 100 kHz are combined flows through a circuit in which two capacitors using electrode foils having a pit length of 55 ⁇ m are connected in parallel.
- the electrostatic capacity corresponding to the pit length is drawn in the 120 Hz region.
- the extracted capacitance is smaller than the pit length.
- the capacitor using the electrode foil having a pit length of 55 ⁇ m draws a large amount of capacitance corresponding to the 120 Hz region, but only a part of the pit length is used for the capacitance corresponding to the 100 kHz region.
- the capacitance that can be extracted as a capacitor is small.
- a capacitor using an electrode foil having a pit length of 27 ⁇ m can wind many electrode foils despite the same size as the capacitor because the electrode foil is thin.
- a capacitor using an electrode foil with a pit length of 27 ⁇ m can extract more capacitance than a capacitor using an electrode foil with a pit length of 55 ⁇ m in the 100 kHz region.
- the frequency region in which the capacitor using the electrode foil having a pit length of 55 ⁇ m cannot sufficiently extract the electrostatic capacity is handled by the other connected in parallel, which is a capacitor using the electrode foil having a pit length of 27 ⁇ m. Is.
- the power converter to which the current waveform in which the different frequency components are combined is applied can improve the efficiency of the entire circuit.
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Abstract
Description
電極箔は、高圧用途、且つ100kHz以上の高周波領域で駆動する電解コンデンサに好適であり、電解コンデンサの陽極箔、陰極箔又は両方に用いられる。電解コンデンサは、電解質が液体であり、陽極箔に誘電体皮膜を形成した非固体電解コンデンサ、電解質として、液体と固体を備えたハイブリッド形電解コンデンサ、及び陽極箔と陰極箔の双方に誘電体皮膜を形成した両極性電解コンデンサが挙げられる。
この電極箔を用いた電解コンデンサとして、電極箔を巻回して成るコンデンサ素子に電解液を含浸した巻回型の非固体電解コンデンサを例にとり説明するが、これに限ることなく、ハイブリッド形電解コンデンサ及び両極性電解コンデンサ、並びに積層型コンデンサも含まれる。
(実施例1)
トンネル状のエッチングピットの深さが27μmである電極箔を陽極箔とする実施例1のコンデンサ素子を作成した。詳細には、20mm×20mmの広さを有し、電極箔厚が125μmのアルミニウム箔を陽極箔とした。この陽極箔に2段階のエッチング処理を施した。エッチング処理において、第1の工程では、塩酸を含む水溶液中で直流電流にて電気化学的にアルミニウム箔にエッチングを行って、エッチングピットを形成した。第2の工程では、硝酸を含む水溶液中で前記アルミニウム箔を電気化学的あるいは化学的にエッチングして、すでに形成されたエッチングピットを拡大した。エッチングピットを形成した電極箔をホウ酸アンモニウム水溶液中で化成化処理し、表面に酸化被膜層を形成した。化成被膜レプリカ法によりエッチングピットの深さを測定したところ、エッチングピットの深さは27μmであった。
エッチング処理の際に電流印加時間を調整することにより、トンネル状のエッチングピットの深さが55μmとなった陽極箔を用いた比較例1のコンデンサ素子、エッチングピットの深さが48μmとなった陽極箔を用いた比較例2のコンデンサ素子、エッチングピットの深さが42μmとなった陽極箔を用いた比較例3のコンデンサ素子、及びエッチングピットの深さが33μmとなった陽極箔を用いた比較例4のコンデンサ素子を完成させた。
実施例1及び比較例1~4のコンデンサ素子の静電容量を測定した。測定にはLCRメータ(Agilent Technologies社製、4284A)を用いた。測定では、周囲温度が21℃であり、交流電流レベルが1.0Vrmsであり、測定周波数を1Hzから120kHzの範囲とした。各周波数での充電及び静電容量の測定は3回ずつ行い、横軸を周波数とし、縦軸を静電容量とするグラフにプロットした。その結果を図1~図7に示す。図1のグラフは比較例1、図2のグラフは比較例2、図3のグラフは比較例3、図4のグラフは比較例4、図5のグラフは実施例1の結果を示す。図6のグラフは、実施例1及び比較例1~4の各平均値をプロットしたグラフである。
トンネル状のエッチングピットの深さが20μmである電極箔を陽極箔とする実施例2のコンデンサ素子、トンネル状のエッチングピットの深さが12μmである電極箔を陽極箔とする実施例3のコンデンサ素子、トンネル状のエッチングピットの深さが6μmである電極箔を陽極箔とする実施例4のコンデンサ素子を、実施例1と同じ製造方法及び同じ条件によって各々作製した。
これら実施例2~4のコンデンサ素子の静電容量を実施例1及び比較例1~4と同一の条件にて測定した。その結果を実施例1及び比較例1~4の平均値とともに図7に示す。図7は、実施例1~4並びに比較例1~4の測定結果を1Hzから100kHzまでプロットしたグラフである。また、実施例1~4並びに比較例1~4のコンデンサ素子に対して120Hz及び100kHzの交流電流を流したときの、各交流電流における静電容量とエッチングピットの深さとの関係を図8に示す。
Claims (5)
- 100kHz以上の周波数領域で使用される電解コンデンサに備えられる電極箔であって、
前記電極箔の表面に形成されたトンネル状のエッチングピットを有し、
前記エッチングピットの深さは、27μm以下であること、
を特徴とする電極箔。 - 前記エッチングピットの深さは、12μm以上27μm以下であること、
を特徴とする請求項1記載の電極箔。 - 前記電極箔はアルミニウム箔であること、
を特徴とする請求項1又は2記載の電極箔。 - 100kHz以上の周波数領域で使用される電解コンデンサであって、
請求項1乃至3の何れかに記載の電極箔を備えること、
を特徴とする電解コンデンサ。 - 前記電極箔により成る陽極箔及び陰極箔と、
前記陽極箔と前記陰極箔との間のセパレータと、
エチレングリコールを主体とする電解液と、
を有すること、
を特徴とする請求項4記載の電解コンデンサ。
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US16/334,020 US20190295777A1 (en) | 2016-09-30 | 2017-09-27 | Electrode foil and electrolytic capacitor |
EP17856268.2A EP3522190A4 (en) | 2016-09-30 | 2017-09-27 | ELECTRODE SHEET AND ELECTROLYTIC CAPACITOR |
KR1020197003489A KR20190057279A (ko) | 2016-09-30 | 2017-09-27 | 전극박 및 전해 콘덴서 |
CN201780059230.7A CN109791843B (zh) | 2016-09-30 | 2017-09-27 | 电极箔以及电解电容器 |
JP2018542806A JP7151483B2 (ja) | 2016-09-30 | 2017-09-27 | 電極箔及び電解コンデンサ |
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KR20210018201A (ko) * | 2018-06-11 | 2021-02-17 | 니폰 케미콘 가부시키가이샤 | 전극체, 전극체를 구비하는 전해 콘덴서 및 전극체의 제조 방법 |
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CN110277246B (zh) * | 2019-07-03 | 2020-10-27 | 西安交通大学 | 一种用激光照蚀制备电解电容器用多孔铝箔及方法 |
TWI826264B (zh) * | 2023-02-17 | 2023-12-11 | 鈺邦科技股份有限公司 | 捲繞型電容器封裝結構及其封口元件 |
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CN109791843B (zh) | 2022-03-22 |
JPWO2018062319A1 (ja) | 2019-07-18 |
TW201830438A (zh) | 2018-08-16 |
US20190295777A1 (en) | 2019-09-26 |
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