WO2018056122A1 - スラリ及び研磨方法 - Google Patents
スラリ及び研磨方法 Download PDFInfo
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- WO2018056122A1 WO2018056122A1 PCT/JP2017/032914 JP2017032914W WO2018056122A1 WO 2018056122 A1 WO2018056122 A1 WO 2018056122A1 JP 2017032914 W JP2017032914 W JP 2017032914W WO 2018056122 A1 WO2018056122 A1 WO 2018056122A1
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- WIPO (PCT)
- Prior art keywords
- abrasive grains
- metal
- slurry
- acid
- glycol
- Prior art date
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- 229960002743 glutamine Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 229940034208 thyroxine Drugs 0.000 description 1
- XUIIKFGFIJCVMT-UHFFFAOYSA-N thyroxine-binding globulin Natural products IC1=CC(CC([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a slurry and a polishing method.
- the CMP polishing liquid containing abrasive grains can be used in various ways such as saving storage space, reducing transportation costs, and easily adjusting the content even when the abrasive grain content in the CMP polishing liquid during use is low. For reasons, it is stored as a stock solution having a higher abrasive grain content than in use, and may be used by diluting by mixing with a medium (diluent) such as water or other additive solution at the time of use. In this case, the higher the abrasive content in the stock solution at the time of concentration, the higher the effect of concentration.
- CMP polishing liquid for metal used for polishing metal
- a damascene process for forming a buried wiring on a substrate polishing for polishing a wiring metal (copper, tungsten, cobalt, etc.).
- Liquid hereinafter referred to as “CMP polishing liquid for wiring metal”
- polishing liquid for barrier film polishing the barrier film for preventing diffusion of the constituent material of the wiring metal into the interlayer insulating film
- the CMP polishing liquid for wiring metal As the CMP polishing liquid for wiring metal, a CMP polishing liquid that stops polishing on the barrier film and a CMP polishing liquid that removes the barrier film and stops polishing on the interlayer insulating film are known. In these wiring metal polishing liquids, with the recent miniaturization of wiring, there is a tendency that abrasive grains having a smaller particle diameter are used.
- the barrier film CMP polishing liquid is not only a highly selective barrier film CMP polishing liquid that polishes the barrier film in preference to other members, and the barrier film, but also the interlayer insulating film below it.
- a non-selective CMP polishing liquid for a barrier film that also polishes the portion is known.
- the non-selective CMP polishing liquid for a barrier film is required to polish not only the barrier film but also the interlayer insulating film at a high speed.
- the content of abrasive grains is generally used. In many cases.
- the abrasive content increases, the particle diameter of the included abrasive grains decreases due to various requirements, and the like. There is.
- the abrasive grains are likely to agglomerate and settle, so it is necessary to increase the dispersion stability of the abrasive grains in order to avoid agglomeration of the abrasive grains.
- a method for improving the dispersion stability of the abrasive grains a method of increasing the electrostatic repulsive force between the abrasive grains by increasing the zeta potential of the abrasive grains in the CMP polishing liquid positively or negatively (for example, see Patent Document 1).
- the abrasive grains may be aggregated and settling may occur no matter how the storage conditions are adjusted. Get higher.
- a method of increasing the zeta potential of abrasive grains in a CMP polishing liquid to be positive or negative it is difficult to change only the zeta potential of the abrasive grains while keeping the compounding ratio of components other than abrasive grains constant. Since the type of abrasive grains affects the polishing characteristics, there is a restriction that the type of abrasive grains cannot be selected only for changing the zeta potential.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a slurry excellent in dispersion stability of abrasive grains using a small grain size abrasive and a polishing method using the slurry. To do.
- the slurry according to the present invention contains abrasive grains, glycol, and water, the average grain diameter of the abrasive grains is 120 nm or less, and the pH is 4.0 or more and less than 8.0.
- the slurry according to the present invention is excellent in the dispersion stability of the abrasive grains although the abrasive grains having a small particle diameter are used.
- the slurry according to the present invention greatly suppresses the aggregation and settling of abrasive grains even when the abrasive grain content is high or when the slurry is stored at about room temperature (eg, 0 ° C. to 60 ° C.) instead of low temperature. Can be saved and is highly convenient for storage.
- a method for increasing the dispersion stability of the abrasive grains by lowering the storage temperature of the CMP polishing liquid requires equipment and space for low-temperature storage, which imposes a burden on the process and cost.
- the slurry according to the present invention does not require such an apparatus and space for low-temperature storage, it can flexibly cope with a reduction in process or cost.
- the pH of the slurry according to the present invention is preferably more than 5.0 and less than 8.0.
- the abrasive grains contain silica.
- the mass ratio of the abrasive content to the glycol content is preferably 0.01 to 150.
- the glycol in the slurry according to the present invention preferably contains a glycol in which the alkylene group between two hydroxy groups has 5 or less carbon atoms.
- the glycol preferably contains at least one selected from the group consisting of ethylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, and 1,5-pentanediol, More preferably, it contains ethylene glycol.
- the slurry according to the present invention preferably further contains an organic acid component.
- the slurry according to the present invention may further contain a metal anticorrosive.
- the slurry according to the present invention may be used for polishing cobalt-based metals.
- the cobalt-based metal can be suitably polished.
- the polishing method according to the present invention includes a step of polishing a metal using the slurry. According to the polishing method of the present invention, it is possible to provide a semiconductor substrate or an electronic device manufactured using the polishing method.
- the semiconductor substrate and other electronic devices manufactured in this manner can be miniaturized and thinned, and have high dimensional accuracy and electrical characteristics with high reliability.
- the metal may contain a cobalt-based metal.
- the cobalt-based metal can be suitably polished.
- the present invention it is possible to provide a slurry excellent in dispersion stability of abrasive grains, although using abrasive grains having a small particle diameter, and a polishing method using the slurry.
- a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the upper limit value or lower limit value of a numerical range of a certain step can be arbitrarily combined with the upper limit value or lower limit value of the numerical range of another step.
- the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples.
- “A or B” only needs to include either A or B, and may include both.
- the materials exemplified in the present specification can be used singly or in combination of two or more unless otherwise specified.
- the content of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. Means.
- the slurry according to this embodiment contains abrasive grains, glycol, and water, the average grain diameter of the abrasive grains is 120 nm or less, and the pH is 4.0 or more and less than 8.0.
- the slurry according to the present embodiment may be used as it is as a CMP polishing liquid without being mixed with a diluent or additive liquid, or may be used as a CMP polishing liquid by mixing with a diluent or additive liquid. That is, the slurry according to the present embodiment can be used as a CMP polishing liquid and can be used to obtain a CMP polishing liquid.
- CMP polishing used for polishing in a wiring formation process of a semiconductor substrate or the like. It can be used as a liquid and to obtain such a CMP polishing liquid.
- the “additive liquid” is defined as a liquid containing an additive, and the additive may be completely dissolved, or at least a part of the additive may exist as a solid.
- abrasive grains examples of the constituent material of the abrasive include silica, alumina, ceria, titania, zirconia, germania, and modified products thereof.
- the abrasive preferably contains silica from the viewpoint of easily suppressing polishing scratches.
- Abrasive grains may be used alone or in combination of two or more.
- silica particles As the abrasive grains containing silica (hereinafter referred to as “silica particles”), known particles such as fumed silica and colloidal silica can be used. As the silica particles, colloidal silica is preferable from the viewpoint of easily obtaining silica particles having an average particle diameter, an association degree, a zeta potential, and a silanol group density, which will be described later.
- the average particle diameter of the abrasive grains is 120 nm or less from the viewpoint of easily suppressing polishing flaws and the viewpoint of excellent dispersion stability of the abrasive grains.
- the average grain size of the abrasive grains is preferably 5 to 120 nm, more preferably 5 to 100 nm, further preferably 10 to 90 nm, from the viewpoint of easily obtaining a good polishing rate, and a good polishing selectivity (metal / insulating material, wiring) From the viewpoint of easily obtaining (metal / barrier metal etc.), 10 to 80 nm is particularly preferable, 10 to 50 nm is very preferable, 10 to 30 nm is very preferable, and 10 to 25 nm is even more preferable.
- the average particle diameter of the abrasive grains is a value (secondary particle diameter) measured with a dynamic light scattering particle size distribution meter (for example, BECKMAN COULTER, trade name: COULTER N5 type).
- the measurement conditions of COULTER are: measurement temperature 20 ° C., solvent refractive index 1.333 (equivalent to water), particle refractive index Unknown (setting), solvent viscosity 1.005 mPa ⁇ s (equivalent to water), Run Time 200 sec, laser incident angle It is 90 °, and the intensity (scattering intensity, corresponding to turbidity) is adjusted so as to fall within the range of 5E + 04 to 1E + 06. If it is higher than 1E + 06, it is diluted with water and measured.
- the degree of association of the abrasive grains is preferably 1.1 or more, more preferably 1.2 or more, still more preferably 1.3 or more, and particularly preferably 1.4 or more, from the viewpoint of easily obtaining a good polishing rate for the insulating material. preferable.
- the “degree of association” refers to the “average particle size (secondary particle size) of secondary particles measured by a particle size distribution meter using a dynamic light scattering method in a state where abrasive grains are dispersed in a liquid.
- the average particle size is divided by the biaxial average primary particle size (average particle size / biaxial average primary particle size).
- the zeta potential of the abrasive grains in the slurry is preferably +5 mV or more, and more preferably +10 mV or more, from the viewpoint that the dispersion stability of the abrasive grains is further excellent and a good polishing rate for the insulating material is easily obtained.
- the upper limit of the zeta potential is not particularly limited, but about 80 mV or less is sufficient for normal polishing.
- the zeta potential ( ⁇ [mV]) is 1.0 ⁇ 10 4 to 5.0 ⁇ 10 4 cps (where “cps” is counts per second, that is, count) in the zeta potential measuring device.
- the slurry is diluted with pure water so that every second means the unit of counting particles) and put into a zeta potential measurement cell for measurement.
- the slurry is adjusted (diluted or the like) so that the abrasive grains (silica particles or the like) are 1.7 to 1.8% by mass.
- the silanol group density of the silica particles is excellent when used in combination with glycols, as well as a good metal / insulating material polishing selectivity when used as a CMP polishing liquid. From the viewpoint of easily obtaining dispersion stability, 5.0 pieces / nm 2 or less is preferable, 4.5 pieces / nm 2 or less is more preferable, and 1.5 pieces / nm 2 or more and 4.5 pieces / nm 2 or less are preferable. Further preferred.
- the silanol group density ( ⁇ [number / nm 2 ]) can be measured and calculated by titration as follows. [1] Weigh silica particles (such as colloidal silica) in a plastic bottle so that the silica particles are 15 g. [2] 0.1 mol / L hydrochloric acid is added to adjust the pH to 3.0 to 3.5. At this time, the mass [g] of the added 0.1 mol / L hydrochloric acid is also measured. [3] Calculate the mass of the pH adjusted in [2] (excluding silica particles, 0.1 mol / L hydrochloric acid and plastic bottle). [4] A portion corresponding to 1/10 of the mass obtained in [3] is weighed into another plastic bottle.
- silica particles such as colloidal silica
- NA [number / mol] in the formula (1) is Avogadro's number
- a [g] is the amount of silica particles
- S BET [m 2 / g] is the BET specific surface area of the silica particles.
- the BET specific surface area S BET of the silica particles can be determined according to the BET specific surface area method.
- a specific measurement method for example, a sample obtained by placing silica particles (colloidal silica or the like) in a dryer and drying at 150 ° C. and then vacuum degassing at 120 ° C. for 60 minutes is used for the BET ratio. It can be determined by a one-point method or a multi-point method for adsorbing nitrogen gas using a surface area measuring device. More specifically, the product after drying at 150 ° C. is finely crushed with a mortar (made of porcelain, 100 mL) to obtain a measurement sample.
- the BET specific surface area S BET is measured using a product name: NOVE-1200).
- the content of the abrasive grains (for example, the content at the time of storage as a stock solution) is preferably 0.1% by mass or more based on the total mass of the slurry from the viewpoint that a good polishing rate can be easily obtained. % By mass or more is more preferable, 0.5% by mass or more is more preferable, 0.7% by mass or more is particularly preferable, 1.0% by mass or more is extremely preferable, and 3.0% by mass or more is very preferable.
- the content of the abrasive grains is 20 masses on the basis of the total mass of the slurry from the viewpoint that it becomes easier to suppress the aggregation / sedimentation of the particles and, as a result, better dispersion stability / storage stability tends to be obtained. % Or less, more preferably 10% by weight or less, still more preferably 7.5% by weight or less, and particularly preferably 5.0% by weight or less.
- glycol As an organic solvent from the viewpoint of excellent dispersion stability of the abrasive grains and excellent storage stability. The reason why such an effect is obtained is not necessarily clear, but is estimated as follows.
- glycol hydroxy group (—OH) of the glycol and the abrasive grains, and the glycol surrounds the abrasive grains by a phenomenon similar to solvation.
- glycol interacts with an abrasive grain efficiently by two hydroxy groups, it is thought that glycol suppresses the approach of abrasive grains and can suppress aggregation and sedimentation of an abrasive grain.
- the abrasive grains contain silica particles
- hydrogen bonds are formed between the hydroxy groups of the glycol and the silanol groups (—Si—OH) of the abrasive grains, and the glycol is caused by a phenomenon similar to solvation.
- the glycol is caused by a phenomenon similar to solvation.
- glycol interacts with the silanol group of an abrasive grain efficiently with two hydroxy groups, glycol can suppress approaching of abrasive grains and can further suppress aggregation and sedimentation of abrasive grains. Conceivable.
- an organic solvent having few hydroxy groups (having no or one hydroxy group) or an organic solvent having many hydroxy groups (having three or more hydroxy groups) causes a phenomenon such as solvation. It is considered difficult to separate the abrasive grains effectively.
- Glycol is highly miscible with water and can effectively suppress aggregation and sedimentation of abrasive grains.
- Glycol is also known as dialcohol, and indicates a compound having two hydroxy groups.
- the slurry according to the present embodiment preferably contains a glycol in which the number of carbon atoms of an alkylene group between two hydroxy groups is 5 or less from the viewpoint of obtaining excellent dispersion stability of abrasive grains. “The number of carbon atoms of the alkylene group between two hydroxy groups” does not include the side chain carbon atom in the molecular chain between the two hydroxy groups. The number of carbon atoms of the alkylene group between the two hydroxy groups may be 4 or less, 3 or less, or 2 or less.
- glycols examples include ethylene glycol (1,2-ethanediol), propylene glycol (1,2-propanediol), 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4 -Butanediol, 1,4-pentanediol, 1,5-pentanediol, 1,5-hexanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol and the like.
- glycols examples include ethylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, and 1,5-pentane, from the viewpoint of obtaining superior dispersion stability of abrasive grains. At least one selected from the group consisting of diols is preferred, and ethylene glycol is more preferred. A glycol may be used individually by 1 type and may use 2 or more types together.
- the glycol content is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, based on the total mass of the slurry, from the viewpoint of obtaining further excellent abrasive dispersion stability. 5 mass% or more is further more preferable, 1.0 mass% or more is especially preferable, 1.5 mass% or more is very preferable, 3.0 mass% or more is very preferable, and 5.0 mass% or more is still more preferable.
- the content of glycol is preferably 20% by mass or less, more preferably 15% by mass or less, and further preferably 10% by mass or less, based on the total mass of the slurry, from the viewpoint of obtaining further excellent dispersion stability of the abrasive grains. preferable.
- the mass ratio of the abrasive content to the glycol content is a viewpoint in which the glycol further suppresses the approach between the abrasive particles and further suppresses the aggregation and sedimentation of the abrasive particles. Therefore, 150 or less is preferable, 100 or less is more preferable, 10 or less is further preferable, 5 or less is particularly preferable, and 4 or less is extremely preferable. If it is in these ranges, it is considered that a sufficient amount of glycol is present for one abrasive grain, and the glycol surrounds the periphery of the abrasive grain well, and in order to maintain the dispersion stability of the abrasive grain, The phenomenon is easy to obtain.
- the mass ratio of the abrasive content to the glycol content is preferably 0.01 or more from the viewpoint of suppressing salting out due to excessive addition of components other than water in the solvent.
- the mass ratio of the content of abrasive grains to the content of glycol may be 0.1 or more, 1 or more, or 3 or more. From these viewpoints, the mass ratio of the abrasive content to the glycol content is preferably 0.01 to 150.
- the change rate of the average particle size of the following abrasive grains after storing the abrasive grains and glycol-containing slurry at 60 ° C. for 14 days is preferably 9% or less.
- the average particle size of the abrasive grains can be measured with a light diffraction / scattering particle size distribution meter. Rate of change in average particle size of abrasive grains (%): (average particle size after storage at 60 ° C. for 14 days ⁇ initial average particle size) / (initial average particle size) ⁇ 100
- the slurry according to this embodiment contains water as a liquid medium.
- the water is not particularly limited, but pure water is preferable. Water only needs to be blended as the balance of the constituent material of the slurry, and the water content is not particularly limited.
- the slurry according to this embodiment may contain additives in addition to the abrasive grains, glycol, and water.
- additives used in general metal polishing liquids can be used.
- the slurry according to this embodiment preferably contains an organic acid component from the viewpoint of further easily obtaining a good polishing rate for a metal such as a wiring metal or a barrier metal.
- the organic acid component can have an effect as a metal oxide solubilizer.
- the “organic acid component” is defined as a substance that contributes to dissolving at least a metal in water, and includes a substance known as a chelating agent or an etching agent.
- the organic acid component may be used alone or in combination of two or more.
- the organic acid component has an effect of improving the polishing rate for the wiring metal and the barrier metal (cobalt-containing part or the like).
- Examples of the organic acid component include organic acids, salts of organic acids, anhydrides of organic acids, and esters of organic acids.
- Examples of organic acids include carboxylic acids (excluding compounds corresponding to amino acids), amino acids, and the like.
- carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, salicylic acid, o-toluic acid, m-toluic acid, p-toluic acid, glycolic acid, diglycolic acid, mandelic acid, quinaldic acid, Quinolic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, gluconic acid, adipic acid, pimelic acid, maleic acid, fumaric acid, malic acid, tartaric acid, citric acid, phthalic acid; 3-methylphthalic
- the carboxylic acid is preferably a dicarboxylic acid having a hydrophobic group (such as an alkyl group), and more preferably a dicarboxylic acid having a hydrophobic group and an aromatic ring, from the viewpoint of easily achieving a good polishing rate for metal and a low etching rate for metal. preferable.
- amino acids As amino acids, glycine, ⁇ -alanine, ⁇ -alanine, 2-aminobutyric acid, norvaline, valine, leucine, ylleucine, isoleucine, alloisoleucine, phenylalanine, proline, sarcosine, ornithine, lysine, serine, threonine, allothreonine, homoserine , Tyrosine, 3,5-diiodotyrosine, ⁇ - (3,4-dihydroxyphenyl) -alanine, thyroxine, 4-hydroxy-proline, cysteine, methionine, ethionine, lanthionine, cystathionine, cystine, cysteic acid, aspartic acid, Glutamic acid, S- (carboxymethyl) -cysteine, 4-aminobutyric acid, asparagine, glutamine, azaserine, arginine, cana
- the content of the organic acid component is preferably 20% by mass or less, more preferably 15% by mass or less, still more preferably 10% by mass or less, based on the total mass of the slurry, from the viewpoint of easily controlling the etching rate. 0% by mass or less is particularly preferable.
- the content of the organic acid component is preferably 0.5% by mass or more, more preferably 1.0% by mass or more, based on the total mass of the slurry, from the viewpoint of easily obtaining a good polishing rate for the metal.
- the slurry according to the present embodiment may contain a metal anticorrosive from the viewpoint of more effectively suppressing metal corrosion.
- a metal anticorrosive A conventionally well-known thing can be used as a compound which has the anticorrosion action with respect to a metal.
- the metal anticorrosive agent is at least selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine.
- One type can be used.
- the “compound” is a general term for compounds having the skeleton, and for example, the “triazole compound” means a compound having a triazole skeleton.
- Arecoline can also be used as the metal anticorrosive.
- a metal anticorrosive may be used individually by 1 type, and may use 2 or more types together.
- triazole compound examples include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole (BTA), 1- Hydroxybenzotriazole, 1-hydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4 -Carboxy-1H-benzotriazole-methyl ester (methyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole-butyl ester (butyl 1H-benzotriazole-4-carboxylate), 4-carboxy -1H-benzotriazol-octyl ester (1H-benzotriazole-4-carboxylic acid Octyl) 5-methylbenzotriazole, 5-hexylbenzotriazol, (1,2,3-benzotriazolyl-1-methyl) (1,2,4-
- pyridine compounds include 8-hydroxyquinoline, prothionamide, 2-nitropyridin-3-ol, pyridoxamine, nicotinamide, iproniazide, isonicotinic acid, benzo [f] quinoline, 2,5-pyridinedicarboxylic acid, 4-styrylpyridine.
- Anabasine 4-nitropyridine-1-oxide, pyridine-3-ethyl acetate, quinoline, 2-ethylpyridine, quinolinic acid, citrazic acid, pyridine-3-methanol, 2-methyl-5-ethylpyridine, 2-fluoro Examples include pyridine, pentafluoropyridine, 6-methylpyridin-3-ol, pyridine-2-ethyl acetate and the like.
- Examples of the pyrazole compound include pyrazole, 1-allyl-3,5-dimethylpyrazole, 3,5-di (2-pyridyl) pyrazole, 3,5-diisopropylpyrazole, 3,5-dimethyl-1-hydroxymethylpyrazole, 3 , 5-dimethyl-1-phenylpyrazole, 3,5-dimethylpyrazole, 3-amino-5-hydroxypyrazole, 4-methylpyrazole, N-methylpyrazole, 3-aminopyrazole and the like.
- Pyrimidine compounds include pyrimidine, 1,3-diphenyl-pyrimidine-2,4,6-trione, 1,4,5,6-tetrahydropyrimidine, 2,4,5,6-tetraaminopyrimidine sulfate, 2, 4,5-trihydroxypyrimidine, 2,4,6-triaminopyrimidine, 2,4,6-trichloropyrimidine, 2,4,6-trimethoxypyrimidine, 2,4,6-triphenylpyrimidine, 2,4 -Diamino-6-hydroxylpyrimidine, 2,4-diaminopyrimidine, 2-acetamidopyrimidine, 2-aminopyrimidine, 4-aminopyrazolo [3,4-d] pyrimidine and the like.
- imidazole compounds include 1,1′-carbonylbis-1H-imidazole, 1,1′-oxalyldiimidazole, 1,2,4,5-tetramethylimidazole, 1,2-dimethyl-5-nitroimidazole, , 2-dimethylimidazole, 1- (3-aminopropyl) imidazole, 1-butylimidazole, 1-ethylimidazole, 1-methylimidazole, benzimidazole and the like.
- guanidine compound examples include 1,1,3,3-tetramethylguanidine, 1,2,3-triphenylguanidine, 1,3-di-o-tolylguanidine, 1,3-diphenylguanidine and the like.
- thiazole compound examples include 2-mercaptobenzothiazole, 2,4-dimethylthiazole and the like.
- tetrazole compounds include tetrazole, 5-methyltetrazole, 5-amino-1H-tetrazole, 1- (2-dimethylaminoethyl) -5-mercaptotetrazole, 1,5-pentamethylenetetrazole, 1- (2-dimethylamino) And ethyl) -5-mercaptotetrazole.
- triazine compound examples include 3,4-dihydro-3-hydroxy-4-oxo-1,2,4-triazine.
- triazole compounds (benzotriazole compounds, etc.), pyridine compounds, wiring metals and barrier metals (such as cobalt-containing parts) from the viewpoint of easily suppressing corrosion while maintaining an appropriate polishing rate
- At least one selected from the group consisting of pyrazole compounds, imidazole compounds, thiazole compounds (such as benzothiazole compounds), and tetrazole compounds is preferred, and groups consisting of triazole compounds (such as benzotriazole compounds), pyridine compounds, and tetrazole compounds
- At least one selected from the group consisting of a pyridine compound and a benzotriazole compound is more preferable.
- the content of the metal anticorrosive is preferably 0.01% by mass or more based on the total mass of the slurry, from the viewpoint of easily suppressing the etching of the metal and from the viewpoint of easily preventing the surface after polishing from being rough. 0.05 mass% or more is more preferable, and 0.1 mass% or more is still more preferable.
- the content of the metal anticorrosive is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the slurry, from the viewpoint of easily maintaining the polishing rate for the wiring metal and the barrier metal at a more practical polishing rate.
- 3% by mass or less is more preferable, 2% by mass or less is particularly preferable, 1% by mass or less is extremely preferable, and 0.5% by mass or less is very preferable.
- Metal oxidizing agent is not particularly limited as long as it has the ability to oxidize metals, and specific examples include hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid, ozone water, and the like. Of these, hydrogen peroxide is particularly preferable.
- a metal oxidizing agent may be used individually by 1 type, and may use 2 or more types together.
- the substrate is a silicon substrate including an integrated circuit element
- contamination with alkali metal, alkaline earth metal, halide, or the like is not preferable, and therefore an oxidizing agent that does not include a nonvolatile component is preferable.
- hydrogen peroxide is the most suitable because ozone water has a rapid compositional change.
- an oxidizing agent that includes a nonvolatile component may be used.
- the content of the metal oxidizer is preferably 0.01% by mass or more, preferably 0.02% by mass or more, based on the total mass of the slurry, from the viewpoint of easily preventing the metal from being oxidized insufficiently and decreasing the CMP rate. Is more preferable, and 0.05 mass% or more is still more preferable.
- the content of the metal oxidant is preferably 50% by mass or less, more preferably 30% by mass or less, and more preferably 10% by mass or less, based on the total mass of the slurry, from the viewpoint of easily preventing the surface to be polished from being rough. Further preferred.
- hydrogen peroxide When hydrogen peroxide is used as the oxidant, it can be usually obtained as hydrogen peroxide solution, so the hydrogen peroxide solution is blended so that the hydrogen peroxide finally falls within the above range.
- the pH of the slurry according to the present embodiment is 4.0 or more from the viewpoint of easily obtaining excellent abrasive dispersion stability.
- the pH is 4.0 or more, it is easy to obtain a good polishing rate for the wiring metal, the barrier metal, and the insulating material, and it is easy to obtain a good polishing selection ratio of the wiring metal to the insulating material. And it is easy to suppress etching.
- the pH of the slurry is such that excellent dispersion stability of the abrasive grains can be easily obtained, good polishing rate for the wiring metal, barrier metal and insulating material can be easily obtained, and good polishing selection of the wiring metal for the insulating material.
- it is preferably more than 4.0, more preferably 5.0 or more, and even more preferably 5.0. 5.3 or higher is particularly preferable, 5.5 or higher is extremely preferable, 6.0 or higher is very preferable, and 6.5 or higher is even more preferable.
- the pH of the slurry according to the present embodiment is less than 8.0 from the viewpoint of easily obtaining excellent abrasive dispersion stability.
- the pH of the slurry according to this embodiment is preferably 7.5 or less, from the viewpoint of easily obtaining excellent abrasive dispersion stability and from the viewpoint of easily obtaining a good polishing rate for metal, and is preferably 7.0 or less. The following is more preferable.
- the pH of the slurry according to this embodiment is preferably more than 4.0 and less than 8.0, more preferably 5.0 or more and less than 8.0, and more than 5.0. It is more preferably less than 8.0, particularly preferably 5.3 or more and less than 8.0, particularly preferably 5.5 or more and less than 8.0, and 6.0 or more and 7.5 or less. It is very preferable that it is 6.5 or more and 7.0 or less.
- PH can be adjusted by the amount of acid component added.
- the pH can also be adjusted by adding an alkaline component such as ammonia, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide (TMAH).
- an alkaline component such as ammonia, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide (TMAH).
- the pH of the slurry can be measured using a pH meter (for example, Model F-51 manufactured by HORIBA, Ltd.). Specifically, standard buffer (phthalate pH buffer, pH: 4.01 (25 ° C.); neutral phosphate pH buffer, pH: 6.86 (25 ° C.); borate pH buffer After three-point calibration using a liquid, pH: 9.18 (25 ° C.), the value after the electrode is placed in a slurry and stabilized after 3 minutes or more can be measured as pH. The pH is defined as the pH at a liquid temperature of 25 ° C.
- the polishing method according to the present embodiment includes a polishing step of polishing the object to be polished using the slurry according to the present embodiment.
- the metal include a wiring metal and a barrier metal.
- the wiring metal copper, copper alloy, copper oxide, copper alloy such as copper alloy oxide; tungsten metal such as tungsten, tungsten nitride, tungsten alloy; cobalt, cobalt alloy, cobalt oxide, cobalt Cobalt metals such as alloys and oxides of cobalt alloys; silver; gold and the like.
- the constituent material of the barrier metal examples include tantalum metal, titanium metal, tungsten metal, ruthenium metal, cobalt metal, and manganese metal. Metals such as tungsten metal and cobalt metal can be used as both the wiring metal and the barrier metal.
- the polishing liquid according to the present embodiment can be suitably used for polishing cobalt-based metal.
- the cobalt-based metal is used by using the slurry according to the present embodiment. Polishing can be suitably performed.
- the polishing step may be a step of polishing the metal of the substrate having a metal on the surface.
- an insulating material may be polished as an object to be polished. Examples of the insulating material include silicon-based materials (such as silicon oxide) and organic polymers.
- the polishing method according to the present embodiment may be performed to obtain a semiconductor substrate or an electronic device.
- the present invention will be described in more detail with reference to examples.
- the present invention is not limited to these examples without departing from the technical idea of the present invention.
- the type of slurry material and the blending ratio thereof may be other types and ratios than those described in this example, and the composition and structure of the polishing object may be other than the composition and structure described in this example.
- the structure can be used.
- Example 1 X parts by mass of ultrapure water was placed in a container, and 10 parts by mass of ethylene glycol was poured into the container and stirred. Furthermore, 0.5 mass part of 20 mass% colloidal silica (a quantity corresponding to 0.1 mass part as silica particles) was added to obtain a slurry. The X parts by mass of the ultrapure water was calculated and calculated so that the total amount was 100 parts by mass.
- Example 2 2.0 parts by mass of glycine and 0.2 parts by mass of benzotriazole were placed in a container, and X parts by mass of ultrapure water was poured into the container, and stirred and mixed to dissolve both components. Next, 1.5 parts by mass of ethylene glycol was added and stirred. Furthermore, 25 mass parts of 20 mass% colloidal silica (amount corresponding to 5.0 mass parts as silica particles) was added to obtain a slurry. The X parts by mass of the ultrapure water was calculated and calculated so that the total amount was 100 parts by mass.
- Examples 3 to 10 and Comparative Examples 1 to 13 For each component shown in Tables 1 and 2, the same operation as in Example 1 was performed to obtain a slurry.
- the average particle size immediately after production (“immediately after production” means within 30 minutes after production; the same shall apply hereinafter) and after storage for 14 days in a thermostatic bath at 60 ° C. (two Next particle size) was measured, and “average particle size after storage ⁇ average particle size immediately after production” was divided by “average particle size immediately after production” to obtain a change rate (%) of particle size.
- the results are shown in Tables 1 and 2.
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Abstract
Description
本明細書において、「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書に段階的に記載されている数値範囲において、ある段階の数値範囲の上限値又は下限値は、他の段階の数値範囲の上限値又は下限値と任意に組み合わせることができる。本明細書に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。「A又はB」とは、A及びBのどちらか一方を含んでいればよく、両方とも含んでいてもよい。本明細書に例示する材料は、特に断らない限り、1種を単独で又は2種以上を組み合わせて用いることができる。本明細書において、組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。
本実施形態に係るスラリは、砥粒と、グリコールと、水と、を含有し、砥粒の平均粒径が120nm以下であり、pHが4.0以上8.0未満である。本実施形態に係るスラリは、希釈液又は添加液と混合することなく、CMP研磨液としてそのまま用いてもよく、希釈液又は添加液と混合することでCMP研磨液として用いてもよい。すなわち、本実施形態に係るスラリは、CMP研磨液として用いること、及び、CMP研磨液を得るために用いることが可能であり、例えば、半導体基板の配線形成工程等における研磨に使用されるCMP研磨液として用いること、及び、このようなCMP研磨液を得るために用いることができる。なお、「添加液」とは、添加剤を含む液として定義され、添加剤が完全に溶解していてもよく、添加剤の少なくとも一部が固体として存在していてもよい。
砥粒の構成材料としては、シリカ、アルミナ、セリア、チタニア、ジルコニア、ゲルマニア、これらの変性物等が挙げられる。砥粒は、研磨傷を抑制しやすい観点から、シリカを含むことが好ましい。砥粒の構成材料は、1種類単独で用いてもよく、2種類以上を併用してもよい。
[1]シリカ粒子が15gとなるように、ポリボトルにシリカ粒子(コロイダルシリカ等)を量りとる。
[2]0.1mol/Lの塩酸を添加し、pH:3.0~3.5に調整する。このとき、添加した0.1mol/Lの塩酸の質量[g]も測定しておく。
[3][2]でpH調整が完了したもの(シリカ粒子、0.1mol/Lの塩酸、ポリボトルは除く)の質量を算出する。
[4][3]で得られた質量の1/10にあたる分を別のポリボトルに量りとる。
[5]そこに塩化ナトリウムを30g添加し、更に超純水を添加して全量を150gにする。
[6]これを、0.1mol/Lの水酸化ナトリウム溶液でpH:4.0に調整し、滴定用サンプルとする。
[7]この滴定用サンプルに0.1mol/Lの水酸化ナトリウム溶液を、pHが9.0になるまで滴下し、pHが4.0から9.0になるまでに要した水酸化ナトリウム量(B[mol])を求める。
[8]下記式(1)より、シリカ粒子のシラノール基密度を算出する。
ρ=B・NA/A・SBET …(1)
[ここで、式(1)中のNA[個/mol]はアボガドロ数、A[g]はシリカ粒子の量、SBET[m2/g]はシリカ粒子のBET比表面積をそれぞれ示す。]
本実施形態に係るスラリは、砥粒の分散安定性が非常に良好であり、保存安定性に優れる観点から、有機溶媒としてグリコールを含有する。このような効果が得られる理由は必ずしも明らかではないが、以下のように推定される。
砥粒の平均粒径の変化率(%):(60℃で14日間保管した後の平均粒径-初期の平均粒径)/(初期の平均粒径径)×100
本実施形態に係るスラリは、液状媒体として水を含有する。水としては、特に制限されるものではないが、純水が好ましい。水は、スラリの構成材料の残部として配合されていればよく、水の含有量は特に制限はない。
本実施形態に係るスラリは、砥粒、グリコール及び水以外に添加剤を含有してもよい。添加剤としては、一般的な金属用研磨液に用いられる添加剤を用いることが可能であり、有機酸成分、金属防食剤、金属酸化剤、有機溶媒(グリコールを除く)、pH調整剤(酸成分(有機酸成分を除く)、アルカリ成分等)、分散剤、界面活性剤、水溶性ポリマー((メタ)アクリル酸由来の構造単位を有する重合体(単独重合体、共重合体等))などが挙げられる。
本実施形態に係るスラリは、配線金属、バリア金属等の金属に対する良好な研磨速度を更に得やすい観点から、有機酸成分を含有することが好ましい。有機酸成分は、酸化金属溶解剤としての効果を有することができる。ここで、「有機酸成分」とは、少なくとも金属を水に溶解させるのに寄与する物質として定義され、キレート剤又はエッチング剤として知られる物質を含む。
本実施形態に係るスラリは、金属の腐食がより効果的に抑えられる観点から、金属防食剤を含有してもよい。金属防食剤としては、特に制限はなく、金属に対する防食作用を有する化合物として従来公知のものがいずれも使用可能である。金属防食剤としては、具体的には、トリアゾール化合物、ピリジン化合物、ピラゾール化合物、ピリミジン化合物、イミダゾール化合物、グアニジン化合物、チアゾール化合物、テトラゾール化合物、トリアジン化合物、及び、ヘキサメチレンテトラミンからなる群より選ばれる少なくとも1種を用いることができる。ここで、前記「化合物」とは、その骨格を有する化合物の総称であり、例えば「トリアゾール化合物」とは、トリアゾール骨格を有する化合物を意味する。金属防食剤としては、アレコリンを用いることもできる。金属防食剤は、1種類単独で用いてもよく、2種類以上を併用してもよい。
金属酸化剤は、金属を酸化する能力を有していれば特に制限はないが、具体的には例えば、過酸化水素、硝酸、過ヨウ素酸カリウム、次亜塩素酸、オゾン水等が挙げられ、その中でも過酸化水素が特に好ましい。金属酸化剤は、1種類単独で用いてもよく、2種類以上を併用してもよい。
本実施形態に係るスラリのpHは、優れた砥粒の分散安定性が得られやすい観点から、4.0以上である。また、pHが4.0以上であると、配線金属、バリア金属及び絶縁材料に対する良好な研磨速度が得られやすく、絶縁材料に対する配線金属の良好な研磨選択比が得られやすく、配線金属の腐食及びエッチングを抑制しやすい。スラリのpHは、優れた砥粒の分散安定性が更に得られやすい観点、配線金属、バリア金属及び絶縁材料に対する良好な研磨速度が更に得られやすい観点、絶縁材料に対する配線金属の良好な研磨選択比が更に得られやすい観点、並びに、配線金属の腐食及びエッチングを更に抑制しやすい観点から、4.0を超えることが好ましく、5.0以上がより好ましく、5.0を超えることが更に好ましく、5.3以上が特に好ましく、5.5以上が極めて好ましく、6.0以上が非常に好ましく、6.5以上がより一層好ましい。
本実施形態に係る研磨方法は、本実施形態に係るスラリを用いて被研磨対象を研磨する研磨工程を備え、例えば、本実施形態に係るスラリを用いて、被研磨対象として金属を研磨する工程を備える。金属としては、配線金属、バリア金属等が挙げられる。配線金属としては、銅、銅合金、銅の酸化物、銅合金の酸化物等の銅系金属;タングステン、窒化タングステン、タングステン合金等のタングステン系金属;コバルト、コバルト合金、コバルトの酸化物、コバルト合金、コバルト合金の酸化物等のコバルト系金属;銀;金などが挙げられる。バリア金属の構成材料としては、タンタル系金属、チタン系金属、タングステン系金属、ルテニウム系金属、コバルト系金属、マンガン系金属等が挙げられる。タングステン系金属、コバルト系金属等の金属は、配線金属及びバリア金属の双方として用いることができる。本実施形態に係る研磨液は、コバルト系金属の研磨に好適に用いることが可能であり、本実施形態に係る研磨方法における研磨工程において、本実施形態に係るスラリを用いて、コバルト系金属を好適に研磨することができる。研磨工程は、表面に金属を有する基板の前記金属を研磨する工程であってもよい。本実施形態に係る研磨方法では、被研磨対象として絶縁材料を研磨してもよい。絶縁材料としては、シリコン系材料(酸化ケイ素等)、有機ポリマーなどが挙げられる。本実施形態に係る研磨方法は、半導体基板又は電子機器を得るために行われてもよい。
(実施例1)
容器にX質量部の超純水を入れ、そこにエチレングリコールを10質量部注ぎ、攪拌した。さらに、20質量%コロイダルシリカ0.5質量部(シリカ粒子として0.1質量部に相当する量)を添加し、スラリを得た。なお、前記超純水のX質量部は、合計が100質量部になるよう計算して求めた。
容器にグリシンを2.0質量部、ベンゾトリアゾールを0.2質量部入れ、そこに超純水をX質量部注ぎ、攪拌・混合して両成分を溶解させた。次に、エチレングリコールを1.5質量部入れ、攪拌した。さらに、20質量%コロイダルシリカ25質量部(シリカ粒子として5.0質量部に相当する量)を添加し、スラリを得た。なお、前記超純水のX質量部は、合計が100質量部になるよう計算して求めた。
表1及び表2に示す各成分に対し、実施例1と同様の操作を実施し、スラリを得た。
(スラリのpH測定)
pHメータ(株式会社堀場製作所(HORIBA,Ltd.)製のModel F-51)を用いて、各スラリのpH(25℃)を測定した。測定結果を表1及び表2に示す。
前記スラリを0.5g量り取り、99.5gの水で希釈(200倍希釈)して測定サンプルを調製した。次に、この測定サンプルにおけるシリカ粒子(コロイダルシリカ)の平均粒径(二次粒径)を、動的光散乱式粒度分布計(BECKMAN COULTER社製、商品名:COULTER N5型)を用いて測定した。D50の値を平均粒径とした。
有機溶媒としてグリコールを用い、砥粒の平均粒径が120nm以下であり、pHが4.0以上8.0未満であるスラリを用いた各実施例によれば、粒径の小さな砥粒であるにも関わらず、60℃/14日間保管した場合でも砥粒の粒径変化率は9%以下であり、砥粒の保存安定性が良いことが明らかになった。また、実施例1~4及び9によれば、有機溶媒としてエチレングリコールを用いた場合に砥粒の保存安定性が特に高まることが明らかになった。一方、各比較例によれば、60℃/14日間保管した場合に砥粒の粒径変化率が9%を超える、又は、砥粒が凝集して沈降してしまい、砥粒の保存安定性が低いことが明らかになった。
Claims (12)
- 砥粒と、グリコールと、水と、を含有し、
前記砥粒の平均粒径が120nm以下であり、
pHが4.0以上8.0未満である、スラリ。 - pHが5.0を超え8.0未満である、請求項1に記載のスラリ。
- 前記砥粒がシリカを含む、請求項1又は2に記載のスラリ。
- 前記グリコールの含有量に対する前記砥粒の含有量の質量比が0.01~150である、請求項1~3のいずれか一項に記載のスラリ。
- 前記グリコールが、2つのヒドロキシ基の間のアルキレン基の炭素数が5以下であるグリコールを含む、請求項1~4のいずれか一項に記載のスラリ。
- 前記グリコールが、エチレングリコール、1,2-ブタンジオール、1,3-ブタンジオール、1,4-ブタンジオール、及び、1,5-ペンタンジオールからなる群より選ばれる少なくとも1種を含む、請求項1~5のいずれか一項に記載のスラリ。
- 前記グリコールがエチレングリコールを含む、請求項1~6のいずれか一項に記載のスラリ。
- 有機酸成分を更に含有する、請求項1~7のいずれか一項に記載のスラリ。
- 金属防食剤を更に含有する、請求項1~8のいずれか一項に記載のスラリ。
- コバルト系金属の研磨に用いられる、請求項1~9のいずれか一項に記載のスラリ。
- 請求項1~10のいずれか一項に記載のスラリを用いて金属を研磨する工程を備える、研磨方法。
- 前記金属がコバルト系金属を含む、請求項11に記載の研磨方法。
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WO2023007722A1 (ja) * | 2021-07-30 | 2023-02-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
WO2023008262A1 (ja) * | 2021-07-30 | 2023-02-02 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
JP7491397B2 (ja) | 2021-07-30 | 2024-05-28 | 株式会社レゾナック | 研磨液及び研磨方法 |
Also Published As
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TW201816874A (zh) | 2018-05-01 |
CN109743878B (zh) | 2021-07-06 |
CN109743878A (zh) | 2019-05-10 |
KR20190054105A (ko) | 2019-05-21 |
JPWO2018056122A1 (ja) | 2019-08-15 |
TWI789365B (zh) | 2023-01-11 |
US20200016721A1 (en) | 2020-01-16 |
KR102522528B1 (ko) | 2023-04-17 |
JP7010229B2 (ja) | 2022-01-26 |
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