WO2018056067A1 - Dispositif et procédé de traitement de substrat - Google Patents

Dispositif et procédé de traitement de substrat Download PDF

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Publication number
WO2018056067A1
WO2018056067A1 PCT/JP2017/032332 JP2017032332W WO2018056067A1 WO 2018056067 A1 WO2018056067 A1 WO 2018056067A1 JP 2017032332 W JP2017032332 W JP 2017032332W WO 2018056067 A1 WO2018056067 A1 WO 2018056067A1
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WO
WIPO (PCT)
Prior art keywords
suction
substrate
processing
liquid
pipe
Prior art date
Application number
PCT/JP2017/032332
Other languages
English (en)
Japanese (ja)
Inventor
通矩 岩尾
憲幸 菊本
周一 安田
和宏 藤田
瑞樹 大澤
博志 戎居
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017129559A external-priority patent/JP6900257B2/ja
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020197002287A priority Critical patent/KR102205818B1/ko
Priority to CN201780046189.XA priority patent/CN109564860B/zh
Priority to US16/320,127 priority patent/US10741422B2/en
Publication of WO2018056067A1 publication Critical patent/WO2018056067A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • substrates to be processed include semiconductor wafers, liquid crystal display substrates, FPD (Flat Panel Display) substrates such as organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical disks.
  • FPD Full Panel Display
  • organic EL electro-electron emission
  • Substrates, photomask substrates, ceramic substrates, solar cell substrates and the like are included.
  • a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device
  • a single wafer processing apparatus that processes substrates one by one includes, for example, a spin chuck that holds and rotates a substrate horizontally, a counter member that faces the substrate held by the spin chuck from above, and a counter member
  • the facing member is a member that is close to the upper surface of the substrate and blocks the upper surface from the surrounding space. It is known that the processing liquid is sucked after the processing liquid is discharged, and the front end surface of the processing liquid in the central axis nozzle is retracted.
  • the processing liquid in the processing liquid piping changes over time (for example, when the processing liquid in the processing liquid piping changes (deteriorates) or the temperature decreases), the processing liquid is Since it is not preferable to use it for substrate processing, it is necessary to discharge all of the processing liquid in the processing liquid piping out of the piping prior to the next substrate processing. On the other hand, when the processing liquid in the processing liquid piping can be used as it is for the next substrate processing, the processing liquid in the processing liquid piping is sucked so that the processing liquid does not fall from the discharge port. Retract the tip surface of.
  • one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of sucking the processing liquid in the processing liquid piping while reducing the consumption of the processing liquid.
  • Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of sucking a processing liquid in a processing liquid pipe while suppressing a decrease in throughput.
  • the present invention includes a substrate holding unit for holding a substrate, a processing liquid pipe communicating with a discharge port for discharging a processing liquid toward the main surface of the substrate held by the substrate holding unit, and the processing liquid pipe
  • a processing liquid supply unit for supplying the processing liquid to the liquid
  • a suction unit for sucking the processing liquid existing inside the processing liquid pipe
  • a control device for controlling the processing liquid supply unit and the suction unit
  • a processing liquid supply step for supplying the processing liquid to the processing liquid pipe to be discharged from the discharge port by the processing liquid supply unit; and A suction step of sucking the processing liquid being sucked, and the control device sucks the processing liquid in the suction step, and the tip surface of the processing liquid after the suction is disposed on the processing liquid pipe.
  • a substrate that selectively executes a first suction step that is disposed at a predetermined standby position in the unit and a second suction step that sucks the processing liquid and retracts the front end surface of the processing liquid from the standby position.
  • a processing device is provided.
  • the processing liquid existing inside the processing liquid piping is sucked, and the front end surface of the processing liquid is retracted.
  • a first suction step in which the front end surface of the processing liquid is disposed at the standby position and a second suction step in which the front end surface of the processing liquid is retracted from the standby position are selectively executed.
  • the amount and time of the sucked processing liquid are reduced as compared with the second suction process. Therefore, compared to the case where the second suction process is executed in all of the suction processes, it is possible to reduce the consumption of the processing liquid and to suppress a decrease in throughput.
  • the processing liquid in the processing liquid piping can be sucked while reducing the consumption of the processing liquid and suppressing the decrease in throughput.
  • An embodiment of the present invention further includes a connecting portion connected to the processing liquid pipe and having a flow space for flowing the liquid therein.
  • the control device may execute a step of retracting the front end surface of the processing liquid from the upstream end of the connection portion in the second suction step.
  • the front end surface of the processing liquid is retracted from the upstream end of the connection portion. That is, in the second suction step, the processing liquid can be excluded from the inside of the processing liquid piping and the entire circulation space of the connection portion. Thereby, when the processing liquid in the processing liquid piping changes with time (component change (deterioration) or temperature decrease), it can be reliably prevented that the processing liquid is used for the next substrate processing.
  • the suction unit sucks the processing liquid inside the processing liquid pipe with a predetermined suction force, and the suction unit has a suction force larger than that of the first suction apparatus.
  • a second suction device that sucks the processing liquid.
  • the control device may suck the processing liquid by the first suction device in the first suction step, and suck the processing liquid by the second suction device in the second suction step.
  • the tip surface of the processing liquid after the suction in the first suction step may not be accurately controlled. If the processing liquid is sucked with a weak suction force in both the first and second suction steps, it may take a long time to execute the second suction step.
  • the processing liquid in the processing liquid pipe is sucked with a relatively weak suction force, and the front end surface of the processing liquid is retracted. Therefore, it is possible to accurately control the front end surface of the processing liquid after the suction in the first suction process, and it is possible to perform the second suction process in a short time.
  • the substrate processing apparatus may further include a connection portion that is connected to the processing liquid pipe and has a distribution space for flowing the liquid therein.
  • the first suction device may be interposed in the processing liquid pipe or branched and connected to the processing liquid pipe.
  • the second suction device may suck the processing liquid through a suction pipe connected to the connection portion.
  • the first suction device is disposed on the discharge port side with respect to the connection portion, and the second suction device is disposed on the side opposite to the discharge port with respect to the connection portion. That is, the front end surface of the processing liquid after the suction in the first suction step is disposed at the standby position, and the front end surface of the processing liquid is moved backward from the upstream end of the connection portion in the second suction step. It is a possible configuration.
  • the second suction device may include an ejector-type suction device.
  • the first suction device may include a diaphragm type suction device.
  • the substrate processing apparatus may further include a suction pipe connected to the processing liquid pipe and provided with the diaphragm type suction apparatus, and a processing liquid valve for opening and closing the processing liquid pipe.
  • the first drive source for driving the diaphragm type suction device and the second drive source for driving the processing liquid valve may be independent of each other.
  • the suction of the diaphragm type suction device is linked to the opening and closing of the processing liquid valve. / There is a risk of releasing the suction.
  • the driving source for driving the diaphragm type suction device and the driving source for driving the processing liquid valve are independent from each other, the opening / closing of the processing liquid valve and the diaphragm type suction are performed.
  • the suction / release of the apparatus can be performed at the optimum operation timing.
  • the first suction device may include a siphon type suction device.
  • control device may execute the first suction step in a continuous process in which a substrate process for processing a substrate using a processing liquid discharged from the discharge port is continuous.
  • control device may execute the second suction step before and / or after the continuous process.
  • the processing liquid since the substrate processing is continuously performed during the continuous processing, the processing liquid does not stay in the processing liquid piping for a long time. Therefore, from the viewpoint of reducing the consumption of the processing liquid and / or suppressing the decrease in throughput, the first suction process in which the front end surface of the processing liquid after suction is disposed at the standby position is the suction process during continuous processing. Executed.
  • the treatment liquid stays in the treatment liquid piping for a long time. Since the processing liquid changing with time cannot be used for the next substrate processing, the second suction step in which the front end surface of the processing liquid is retracted from the standby position before and / or after the continuous processing. Is performed as a suction step.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the control device may execute the first suction step during the substrate processing for processing one substrate using the processing liquid discharged from the discharge port.
  • the control device may execute the second suction step before the substrate processing and / or after the substrate processing.
  • the processing liquid does not stay in the processing liquid piping for a long time. Therefore, from the viewpoint of reducing the consumption of the processing liquid and / or suppressing the decrease in throughput, during the substrate processing, the first suction process in which the front end surface of the processing liquid after the suction is disposed at the standby position is the suction process. Executed.
  • the processing liquid may stay in the processing liquid piping for a long time before the substrate processing and / or after the substrate processing. Since the processing liquid that has changed over time (component change (deterioration) or temperature decrease) cannot be used for the next substrate processing, the front surface of the processing liquid is at the standby position before and / or after the continuous processing.
  • the second suction step that is further retracted is executed as the suction step.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the control device may execute the first suction step when a period from the end of discharge of the processing liquid from the discharge port to the start of the next discharge is less than a predetermined period.
  • the control device may execute the second suction step when the period from the end of the discharge of the processing liquid from the discharge port to the start of the next discharge is a predetermined period or longer.
  • the treatment liquid staying in the treatment liquid pipe changes with time (component change). (Deterioration) or temperature drop), it is used for the next substrate processing.
  • the first suction process in which the front end surface of the processing liquid after suction is disposed at the standby position is executed as the suction process.
  • the processing liquid remaining in the processing liquid piping may change with time (component change (deterioration) or temperature decrease). Since it is not preferable to use such a processing liquid as it is for the processing, it is necessary to discharge all the processing liquid in the processing liquid piping out of the piping prior to the next substrate processing. Therefore, in this case, the second suction process in which the front end surface of the processing liquid is retracted from the standby position is executed as the suction process.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the control device may further execute an elapsed period measuring step of measuring an elapsed period from the stop of discharge of the processing liquid from the discharge port.
  • an elapsed period measuring step of measuring an elapsed period from the stop of discharge of the processing liquid from the discharge port.
  • the control apparatus executes the first suction step, and when the elapsed period is equal to or longer than the predetermined period, the control apparatus performs the second suction process.
  • the suction step may be executed.
  • the period from the end of the discharge of the processing liquid from the discharge port to the start of the next discharge is not less than the predetermined period. Whether or not there is can be determined with high accuracy.
  • the discharge port may be provided immovably in a direction along the main surface of the substrate held by the substrate holding unit. According to this configuration, the substrate on which the discharge port is held by the substrate holding unit It is immovable in the direction along the surface of the.
  • the processing liquid inside the processing liquid pipe has changed over time (component change (deterioration) or temperature drop), all processing liquid in the processing liquid pipe must be removed from the pipe before starting the next substrate processing. Need to be discharged.
  • the discharge port is provided so as not to move in the direction along the main surface of the substrate held by the substrate holding unit, the processing liquid can be discharged by discharging the processing liquid from the discharge port. Can not. Therefore, it is necessary to discharge the processing liquid remaining in the processing liquid piping by using suction.
  • the discharge port is provided so as not to move in the direction along the main surface of the substrate held by the substrate holding unit, the discharge port faces the main surface of the substrate. In order to prevent the treatment liquid from dropping from the outlet (so-called dripping), after the treatment liquid is discharged from the discharge port, it is necessary to suck the inside of the treatment liquid pipe to retract the front end surface of the treatment liquid.
  • the consumption of treatment liquid can be reduced.
  • the processing liquid in the processing liquid piping can be sucked while reducing the consumption of the processing liquid and the processing liquid.
  • the substrate processing apparatus may further include a facing member having a substrate facing surface that faces the main surface of the substrate held by the substrate holding unit and cannot move in a direction along the main surface of the substrate.
  • the discharge port may be formed on the substrate facing surface.
  • the discharge port cannot be moved in a direction along the surface of the substrate held by the substrate holding unit. Even in this case, the processing liquid in the processing liquid piping can be sucked while reducing the consumption of the processing liquid and suppressing the decrease in throughput.
  • the present invention is also a substrate processing method executed in a substrate processing apparatus including a processing liquid pipe communicating with a discharge port, and supplies the processing liquid to the processing liquid pipe so as to discharge the processing liquid from the discharge port.
  • a treatment liquid supply step and a suction step for sucking the treatment liquid present in the treatment liquid pipe wherein the suction step retracts the front end surface of the treatment liquid and the tip of the treatment liquid after the suction
  • the second suction step provides a substrate processing method that is selectively performed.
  • the processing liquid existing inside the processing liquid piping is sucked, and the front end surface of the processing liquid is retracted.
  • a first suction step in which the front end surface of the processing liquid is disposed at the standby position and a second suction step in which the front end surface of the processing liquid is retracted from the standby position are selectively executed.
  • the amount and time of the sucked processing liquid are reduced as compared with the second suction process. Therefore, compared to the case where the second suction process is executed in all of the suction processes, it is possible to reduce the consumption of the processing liquid and to suppress a decrease in throughput.
  • the processing liquid in the processing liquid piping can be sucked while reducing the consumption of the processing liquid and suppressing the decrease in throughput.
  • the substrate processing apparatus further includes a connection portion that is connected to the processing liquid piping and has a distribution space for flowing the liquid therein.
  • the second suction step may include a step of retracting the front end surface of the processing liquid from the upstream end of the connection portion.
  • the front end surface of the processing liquid is retracted from the upstream end of the connection portion. That is, in the second suction step, the processing liquid can be excluded from the inside of the processing liquid piping and the entire circulation space of the connection portion. Thereby, when the processing liquid in the processing liquid piping changes with time (component change (deterioration) or temperature decrease), it can be reliably prevented that the processing liquid is used for the next substrate processing.
  • the first suction step may include a step of sucking the processing liquid inside the processing liquid pipe with a predetermined suction force.
  • the second suction step may include a step of sucking the processing liquid inside the processing liquid pipe with a suction force larger than that of the first suction step.
  • the tip surface of the processing liquid after the suction in the first suction step may not be accurately controlled. If the processing liquid is sucked with a weak suction force in both the first and second suction steps, it may take a long time to execute the second suction step.
  • the processing liquid in the processing liquid pipe is sucked with a relatively weak suction force, and the front end surface of the processing liquid is retracted. Therefore, it is possible to accurately control the front end surface of the processing liquid after the suction in the first suction process, and it is possible to perform the second suction process in a short time.
  • the first suction step may be a step performed in a continuous process in which a substrate process for processing a substrate using a processing liquid discharged from the discharge port is continued.
  • the second suction step may be a step performed before the continuous processing and / or after the continuous processing.
  • the processing liquid since the substrate processing is continuously performed during the continuous processing, the processing liquid does not stay in the processing liquid piping for a long time. Therefore, from the viewpoint of reducing the consumption of the processing liquid and / or suppressing the decrease in throughput, the first suction process in which the front end surface of the processing liquid after suction is disposed at the standby position is the suction process during continuous processing. Executed.
  • the treatment liquid stays in the treatment liquid piping for a long time. Since the processing liquid changing with time cannot be used for the next substrate processing, the second suction step in which the front end surface of the processing liquid is retracted from the standby position before and / or after the continuous processing. Is performed as a suction step.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the first suction step may be a step performed during the substrate processing for processing one substrate using the processing liquid discharged from the discharge port.
  • the second suction step may be a step performed before the substrate processing and / or after the substrate processing.
  • the processing liquid does not stay in the processing liquid piping for a long time. Therefore, from the viewpoint of reducing the consumption of the processing liquid and / or suppressing the decrease in throughput, during the substrate processing, the first suction process in which the front end surface of the processing liquid after the suction is disposed at the standby position is the suction process. Executed.
  • the processing liquid may stay in the processing liquid piping for a long time before the substrate processing and / or after the substrate processing. Since the processing liquid that has changed over time (component change (deterioration) or temperature decrease) cannot be used for the next substrate processing, the front surface of the processing liquid is at the standby position before and / or after the continuous processing.
  • the second suction step that is further retracted is executed as the suction step.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the first suction step may be a step performed when a period from the end of discharge of the processing liquid from the discharge port to the start of the next discharge is less than a predetermined period.
  • the second suction step may be a step performed when a period from the end of the discharge of the processing liquid from the discharge port to the start of the next discharge is a predetermined period or longer.
  • the processing liquid staying in the processing liquid pipe is changed over time (component change). (Deterioration) or temperature drop), it is used for the next substrate processing.
  • the first suction process in which the front end surface of the processing liquid after suction is disposed at the standby position is executed as the suction process.
  • the processing liquid remaining in the processing liquid piping may change with time (component change (deterioration) or temperature decrease). Since it is not preferable to use such a processing liquid as it is for the processing, it is necessary to discharge all the processing liquid in the processing liquid piping out of the piping prior to the next substrate processing. Therefore, in this case, the second suction process in which the front end surface of the processing liquid is retracted from the standby position is executed as the suction process.
  • the processing liquid remaining in the processing liquid piping can be sucked in a mode suitable for the state of the processing liquid.
  • the substrate processing method further includes an elapsed period measuring step of measuring an elapsed period from the stop of the discharge of the processing liquid from the discharge port, wherein the first suction step includes the elapsed period being less than the predetermined period.
  • the second suction step is a step executed when the elapsed period is equal to or longer than the predetermined period.
  • the period from the end of the discharge of the processing liquid from the discharge port to the start of the next discharge is not less than the predetermined period. Whether or not there is can be determined with high accuracy.
  • FIG. 1 is a diagram of a substrate processing apparatus according to a first embodiment of the present invention viewed in the horizontal direction.
  • FIG. 2 is a longitudinal sectional view of a facing member provided in the substrate processing apparatus.
  • FIG. 3 is a bottom view of the facing member.
  • FIG. 4 is a diagram showing a configuration of a first supply / suction unit provided in the substrate processing apparatus.
  • FIG. 5 is a diagram showing a configuration of a second supply / suction unit provided in the substrate processing apparatus.
  • FIG. 6 is a diagram showing a configuration of a third supply / suction unit provided in the substrate processing apparatus.
  • FIG. 7 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
  • FIG. 1 is a diagram of a substrate processing apparatus according to a first embodiment of the present invention viewed in the horizontal direction.
  • FIG. 2 is a longitudinal sectional view of a facing member provided in the substrate processing apparatus.
  • FIG. 3 is a bottom view of the facing
  • FIG. 8 is a flowchart for explaining a substrate processing example executed by the substrate processing apparatus.
  • FIG. 9 is a diagram illustrating the discharge of the chemical liquid using the first supply / suction unit.
  • FIG. 10 is a diagram illustrating the stop of the discharge of the chemical liquid using the first supply / suction unit.
  • FIG. 11 is a diagram illustrating the first suction of the chemical liquid using the first supply / suction unit.
  • FIG. 12 is a diagram showing the second suction of the chemical liquid using the first supply / suction unit.
  • FIG. 13 is a diagram showing the discharge of the organic solvent using the second supply / suction unit.
  • FIG. 14 is a diagram showing stoppage of organic solvent discharge using the second supply / suction unit.
  • FIG. 9 is a diagram illustrating the discharge of the chemical liquid using the first supply / suction unit.
  • FIG. 10 is a diagram illustrating the stop of the discharge of the chemical liquid using the first supply / suction unit.
  • FIG. 11 is a
  • FIG. 15 is a diagram showing the first suction of the organic solvent using the second supply / suction unit.
  • FIG. 16 is a diagram showing the second suction of the organic solvent using the second supply / suction unit.
  • FIG. 17 is a flowchart for explaining in detail each process liquid supply step included in the substrate processing example.
  • FIG. 18 is a diagram for explaining a first modification of the present invention.
  • FIG. 19 is a diagram for explaining a second modification of the present invention.
  • FIG. 20 is an illustrative plan view for explaining the internal layout of the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 21 is a schematic cross-sectional view for explaining a configuration example of the processing unit shown in FIG. 22 is a longitudinal sectional view of the central axis nozzle shown in FIG. FIG.
  • FIG. 23 is a bottom view of the central axis nozzle.
  • FIG. 24 is a view for explaining the configuration of the hydrophobizing agent supply unit shown in FIG.
  • FIG. 25 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
  • FIG. 26 is a flowchart for explaining the contents of the substrate processing executed in the processing unit.
  • FIG. 27 is a flowchart showing the flow of pre-processing executed by the pre-recipe in the processing unit.
  • FIG. 28 is a flowchart showing a substrate processing flow executed by a process recipe in the processing unit.
  • FIG. 29 is a flowchart showing the flow of pre-processing executed by the process recipe in the processing unit.
  • FIG. 30A is a diagram illustrating a state of the processing unit before the substrate is carried into the substrate processing apparatus.
  • FIG. 30B is a diagram for explaining the pre-dispensing process shown in FIG. 27.
  • FIG. 31 is a diagram for explaining the hydrophobizing agent supply step shown in FIG.
  • FIG. 32 is a diagram for explaining a first suction step performed after the hydrophobizing agent supply step.
  • FIG. 33 is a diagram for explaining the connecting portion cleaning step shown in FIG. 29.
  • FIG. 34 is a diagram for explaining the pipe cleaning step shown in FIG.
  • FIG. 35 is a diagram for explaining the second suction step shown in FIG.
  • FIG. 36 is a diagram for explaining the filling step shown in FIG.
  • FIG. 1 is a view of the substrate processing apparatus 1 according to the first embodiment of the present invention as seen in the horizontal direction.
  • the substrate processing apparatus 1 is a single wafer type apparatus that processes semiconductor wafers as an example of the substrate W one by one.
  • the substrate processing apparatus 1 includes a processing unit 2 that processes the substrate W, and a control device 3 that controls opening and closing of devices provided in the substrate processing apparatus 1 and valves.
  • the processing unit 2 holds the substrate W around a vertical rotation axis passing through the central portion of the substrate W while holding the box-shaped chamber 4 having an internal space and a single substrate W in the chamber 4 in a horizontal posture.
  • a second discharge port (discharge port) for discharging the processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5.
  • a third discharge port (discharge port) for discharging the processing liquid toward the center of the upper surface of the substrate W held by the spin chuck 5.
  • the chamber 4 includes a box-shaped partition wall 18 that houses the spin chuck 5 and the nozzles, and an FFU (fan filter filter) as a blower unit that sends clean air (air filtered by a filter) from the upper part of the partition wall 18 into the partition wall 18.
  • Unit 19 and an exhaust duct 20 for discharging the gas in the chamber 4 from the lower part of the partition wall 18.
  • the FFU 19 is disposed above the partition wall 18 and attached to the ceiling of the partition wall 18.
  • the FFU 19 sends clean air downward from the ceiling of the partition wall 18 into the chamber 4.
  • the exhaust duct 20 is connected to the bottom of the cup 17 and guides the gas in the chamber 4 toward an exhaust processing facility provided in a factory where the substrate processing apparatus 1 is installed. Therefore, a downflow (downflow) that flows downward in the chamber 4 is formed by the FFU 19 and the exhaust duct 20.
  • the processing of the substrate W is performed in a state where a down flow is formed in the chamber 4.
  • the spin chuck 5 As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed.
  • the spin chuck 5 includes a spin motor 22, a lower spin shaft 23 integrated with a drive shaft of the spin motor 22, and a disk-like shape attached to the upper end of the lower spin shaft 23 substantially horizontally.
  • a plurality of (three or more, for example, six) clamping members 25 are disposed on the peripheral edge thereof.
  • the plurality of clamping members 25 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 24.
  • the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state.
  • a vacuum suction type vacuum chuck
  • the substrate W held on the spin chuck 5 may be employed.
  • the substrate processing apparatus 1 further includes a facing member 26 that faces the upper surface of the substrate W held by the spin chuck 5.
  • FIG. 2 is a longitudinal sectional view of the facing member 26.
  • FIG. 3 is a bottom view of the facing member 26. The facing member 26 will be described with reference to FIGS.
  • the opposing member 26 includes a blocking plate 27 and a rotating shaft 28 provided on the blocking plate 27 so as to be integrally rotatable.
  • the blocking plate 27 has a disk shape having a diameter substantially equal to or larger than that of the substrate W.
  • the blocking plate 27 has a substrate facing surface 29 formed of a circular horizontal flat surface facing the entire upper surface of the substrate W on the lower surface thereof.
  • a cylindrical through hole 30 penetrating the blocking plate 27 in the vertical direction is formed at the center of the substrate facing surface 29.
  • the through hole 30 is partitioned by a cylindrical inner peripheral surface.
  • the rotary shaft 28 is provided so as to be rotatable around a rotation axis A2 (an axis that coincides with the rotation axis A1 of the substrate W) extending vertically through the center of the blocking plate 27.
  • the rotating shaft 28 is cylindrical.
  • the inner peripheral surface of the rotation shaft 28 is formed in a cylindrical surface with the rotation axis A2 as the center.
  • the internal space of the rotating shaft 28 communicates with the through hole 30 of the blocking plate 27.
  • the rotary shaft 28 is supported by a support arm 31 extending horizontally above the blocking plate 27 so as to be relatively rotatable.
  • the support arm 31 can move only in the vertical direction, and does not move in the left-right direction (that is, the direction along the surface of the substrate W).
  • the substrate facing surface 29 and the discharge ports 8, 10, 12 can move only in the vertical direction, and cannot move in the horizontal direction (that is, the direction along the surface of the substrate W).
  • a central axis nozzle 32 extending vertically along the rotation axis A2 of the blocking plate 27 is inserted into the through hole 30.
  • the central axis nozzle 32 includes a casing and a first nozzle pipe 9, a second nozzle pipe 11, and a third nozzle pipe 13 that pass through the inside of the casing vertically.
  • the first to third nozzle pipes 9, 11, 13 are each an inner tube.
  • the casing 33 is inserted into the through hole 30 in a non-contact state with the blocking plate 27 and the rotary shaft 28.
  • the shield plate 27 is coupled to a shield plate rotating unit 34 having a configuration including an electric motor or the like.
  • the shielding plate rotating unit 34 rotates the shielding plate 27 and the rotation shaft 28 around the rotation axis A ⁇ b> 2 with respect to the support arm 31.
  • the supporting arm 31 is coupled to a counter member lifting / lowering unit 35 including an electric motor and a ball screw.
  • the facing member lifting / lowering unit 35 lifts and lowers the facing member 26 (the blocking plate 27 and the rotating shaft 28) and the first to third nozzle pipes 9, 11, and 13 together with the support arm 31 in the vertical direction.
  • the opposing member lifting / lowering unit 35 is shielded between a proximity position where the substrate facing surface 29 of the shielding plate 27 is close to the upper surface of the substrate W held by the spin chuck 5 and a retracted position provided above the proximity position.
  • the plate 27 and the nozzle pipes 9, 11 and 13 are moved up and down.
  • the counter member lifting / lowering unit 35 can hold the blocking plate 27 at each position between the proximity position and the retracted position.
  • the cup 17 is disposed outward (in a direction away from the rotation axis A1) from the substrate W held by the spin chuck 5.
  • the cup 17 surrounds the periphery of the spin base 24.
  • the processing liquid supplied to the substrate W is shaken off around the substrate W.
  • the upper end portion 17 a of the cup 17 that opens upward is disposed above the spin base 24. Therefore, the processing liquid (chemical liquid, rinsing liquid, organic solvent, surface modifier, etc.) discharged around the substrate W is received by the cup 17. Then, the processing liquid received by the cup 17 is sent to a collecting device or a draining device (not shown).
  • FIG. 4 is a diagram showing the configuration of the first supply / suction unit 14.
  • the first nozzle pipe 9 has a first vertical direction portion 41 and a first horizontal direction portion 42.
  • the distal end portion of the first left-right direction portion 42 is connected to the base end portion (upper end portion) of the first up-down direction portion 41.
  • a first discharge port 8 is formed at the tip (lower end) of the first vertical direction portion 41.
  • the first supply / suction unit 14 includes a first common pipe 43 in which one end side (left side in FIG. 4) is connected to the first left-right direction portion 42 of the first nozzle pipe 9 and a first common pipe. 43 is connected to the other end side (right side in FIG. 4), and the first drainage pipe 45 is connected to the first connection portion 44 at one end side (left side in FIG. 4).
  • a chemical solution pipe 46 having one end side (left side in FIG. 4) connected to the first connection portion 44, and a rinse liquid pipe 47 having one end side (left side in FIG. 4) connected to the first connection portion 44;
  • the first chemical / rinse solution suction pipe 48 having one end side (left side in FIG. 4) branched and connected to the middle portion of the first common pipe 43, and one end side (left side in FIG. 4) to the first connection part 44. Is connected to a second chemical / rinse solution suction pipe 49.
  • the first common pipe 43 In the first common pipe 43, the first common pipe 43 is opened and closed at an upstream portion (a portion on the first discharge port 8 side) of the branch position of the first chemical / rinse liquid suction pipe 48. A first common valve 50 is interposed.
  • the first drainage pipe 45 is provided with a first drainage valve 51 for opening and closing the first drainage pipe 45.
  • the other end side of the first drainage pipe 45 is connected to a drainage facility outside the machine.
  • the chemical liquid pipe 46 is provided with a chemical liquid valve 52 for opening and closing the chemical liquid pipe 46.
  • a chemical solution is supplied to the other end side of the chemical solution pipe 46 from a chemical solution supply source.
  • a specific example of the chemical solution is hydrofluoric acid (HF).
  • the chemical solution is not limited to hydrofluoric acid, but sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethyl) It may be a liquid containing at least one of ammonium hydroxide and the like, a surfactant, and a corrosion inhibitor.
  • organic acid eg, citric acid, oxalic acid, etc.
  • organic alkali eg, TMAH: tetramethyl
  • It may be a liquid containing at least one of ammonium hydroxide and the like, a surfactant, and a corrosion inhibitor.
  • the rinse liquid pipe 47 is provided with a rinse liquid valve 53 for opening and closing the rinse liquid pipe 47.
  • the rinse liquid is supplied from the rinse liquid supply source to the other end side of the rinse liquid pipe 47.
  • the rinsing liquid are, for example, deionized water (DIW), but are not limited to DIW, but carbonated water, electrolytic ionic water, hydrogen water, ozone water, and ammonia water having a diluted concentration (for example, about 10 ppm to 100 ppm). Either may be sufficient.
  • DIW deionized water
  • carbonated water e.g., but carbonated water
  • electrolytic ionic water e.g., hydrogen water, ozone water
  • ammonia water having a diluted concentration for example, about 10 ppm to 100 ppm. Either may be sufficient.
  • a first chemical / rinse solution suction pipe 48 is branched and connected to the first common pipe 43.
  • the first chemical / rinse solution suction pipe 48 is provided with a first chemical / rinse solution suction valve 54 for opening and closing the first chemical / rinse solution suction pipe 48.
  • a first chemical / rinse solution suction device (first suction device) 55 is connected to the other end (tip) of the first chemical / rinse solution suction pipe 48.
  • the first chemical / rinse solution suction device 55 is a siphon-type suction device.
  • the siphon type suction device fills the inside of the pipe (first chemical / rinse liquid suction pipe 48) with the liquid and sucks (drains) the liquid in the first common pipe 43 using the principle of siphon.
  • the siphon-type suction device can suppress energy consumption for suction as compared with an ejector-type suction device such as a vacuum generator or an aspirator described below.
  • the second chemical / rinse solution suction pipe 49 is provided with a second chemical / rinse solution suction valve 56 for opening and closing the second chemical / rinse solution suction pipe 49.
  • a second chemical / rinse solution suction device (second suction device) 57 is connected to the other end side (tip) of the second chemical / rinse solution suction pipe 49.
  • the second chemical / rinse solution suction device 57 is an ejector-type suction device.
  • the ejector-type suction device has a stronger suction force (higher suction speed) than the siphon-type suction device, and has a larger liquid flow rate that can be sucked.
  • the rinsing liquid valve 53 and the first common valve 50 are opened with the other valves closed, the rinsing liquid is supplied from the rinsing liquid valve 53 to the first nozzle pipe 9, and the first discharge port 8. The rinsing liquid is discharged downward from the top.
  • the rinse liquid valve 53 and the first drain valve 51 are opened with the other valves closed, the rinse liquid is supplied from the rinse liquid valve 53 to the first drain pipe 45. Thereby, the rinse liquid in the rinse liquid piping 47 can be drained (discarded).
  • the first chemical / rinse solution suction device 55 is always in an operating state, for example.
  • the function of the first chemical / rinse solution suction device 55 is activated, and the first chemical / rinse solution suction device 55 is activated.
  • the inside of the chemical liquid / rinse liquid suction pipe 48 is sucked, and the processing liquid (chemical liquid or rinse liquid) contained in the first chemical liquid / rinsing liquid suction pipe 48 is drawn into the second chemical liquid / rinsing liquid suction pipe 49. .
  • the suction force of the first chemical / rinse solution suction device 55 is relatively weak, and the suction speed thereof is also relatively slow.
  • the second chemical / rinse solution suction device 57 is always in an operating state, for example.
  • the function of the second chemical / rinse solution suction device 57 is activated, and the second chemical / rinse solution suction device 57 is activated.
  • the inside of the chemical / rinse solution suction pipe 49 is sucked, and the treatment liquid (the second chemical / rinse liquid suction pipe 49, the first connection 44, the first common pipe 43, and the first nozzle pipe 9 ( Chemical solution or rinse solution) is drawn into the second chemical solution / rinse solution suction pipe 49.
  • the suction force of the second chemical / rinsing liquid suction device 57 is stronger than that of the first chemical / rinsing liquid suction device 55, and the suction speed is also the case of the first chemical / rinsing liquid suction device 55. Slow compared to.
  • the first common pipe 43, the first connection portion 44, the chemical liquid pipe 46, the chemical liquid valve 52, the rinse liquid pipe 47 and the rinse liquid valve 53 constitute a processing liquid supply unit. is doing. Further, in the first supply / suction unit 14, the first common pipe 43, the first chemical / rinse liquid suction pipe 48, the first chemical / rinse liquid suction device 55, the first connection portion 44, the first The second chemical / rinse solution suction pipe 49 and the second chemical / rinse solution suction device 57 constitute a suction unit.
  • FIG. 5 is a diagram showing the configuration of the second supply / suction unit 15.
  • the second nozzle pipe 11 has a second vertical direction portion 61 and a second horizontal direction portion 62.
  • a distal end portion of the second left-right direction portion 62 is connected to a base end portion (upper end portion) of the second up-down direction portion 61.
  • a second discharge port 10 is formed at the tip (lower end) of the second vertical direction portion 61.
  • the second supply / suction unit 15 includes a second common pipe 63 having one end (left side in FIG. 5) connected to the second left-right direction portion 62 of the second nozzle pipe 11 and a second common pipe.
  • the organic solvent piping 66 having one end side (left side in FIG. 5) connected to the second connection portion 64 and the organic solvent suction piping 69 having one end side (left side in FIG. 5) connected to the second connection portion 64.
  • the second common pipe 63 is provided with a second common valve 70 for opening and closing the second common pipe 63.
  • the second drainage pipe 65 is provided with a second drainage valve 71 for opening and closing the second drainage pipe 65.
  • the other end of the second drainage pipe 65 is connected to a drainage facility outside the machine.
  • the organic solvent pipe 66 is provided with an organic solvent valve 72 for opening and closing the organic solvent pipe 66.
  • An organic solvent is supplied from the organic solvent supply source to the other end side of the organic solvent pipe 66.
  • An example of the organic solvent is IPA (isopropyl alcohol).
  • a first organic solvent suction device (first suction device) 75 is interposed downstream from the position where the second common valve 70 is interposed.
  • the first organic solvent suction device 75 is a diaphragm type suction device.
  • the diaphragm type suction device includes a cylindrical head interposed in the middle of the second common pipe 63 and a diaphragm housed in the head, and a flow formed in the head by driving the diaphragm. This is a suction device that changes the volume of the passage (see Japanese Patent Application Laid-Open No. 2016-111306).
  • the organic solvent suction pipe 69 is provided with an organic solvent suction valve 76 for opening and closing the organic solvent suction pipe 69.
  • a second organic solvent suction device (second suction device) 77 is connected to the other end side (tip end) of the organic solvent suction pipe 69.
  • the second organic solvent suction device 77 is an ejector-type suction device similar to the second chemical / rinse solution suction device 57.
  • the ejector-type suction device has a stronger suction force (higher suction speed) and a larger liquid flow rate that can be sucked than the diaphragm-type suction device.
  • the organic solvent valve 72 and the second common valve 70 are opened with the other valves closed, the organic solvent is supplied from the organic solvent pipe 66 to the second nozzle pipe 11, and the second discharge port 10. The organic solvent is discharged downward from the bottom.
  • the organic solvent valve 72 and the second drain valve 71 are opened with the other valves closed, the organic solvent is supplied from the organic solvent pipe 66 to the second drain pipe 65. Thereby, the organic solvent in the organic solvent piping 66 can be drained (discarded).
  • the first organic solvent suction device 75 is operated by the control device 3 (the function of the first organic solvent suction device 75 is validated). In this operating state, the organic solvent contained in the second common pipe 63 is drawn into the first organic solvent suction device 75.
  • the suction force of the first organic solvent suction device 75 is relatively weak, and the suction speed is also relatively slow.
  • the second organic solvent suction device 77 is always in an operating state, for example.
  • the organic solvent suction valve 76 is opened in the operating state of the second organic solvent suction device 77, the function of the second organic solvent suction device 77 is validated, and the inside of the organic solvent suction pipe 69 is sucked and organic
  • the organic solvent contained in the solvent suction pipe 69, the second connection portion 64, the second common pipe 63, and the second nozzle pipe 11 is drawn into the organic solvent suction pipe 69.
  • the suction force of the second organic solvent suction device 77 is stronger than that of the first organic solvent suction device 75, and the suction speed thereof is also slower than that of the first organic solvent suction device 75.
  • the second common pipe 63, the second connection portion 64, the organic solvent pipe 66, and the organic solvent valve 72 constitute a processing liquid supply unit.
  • the second common pipe 63, the first organic solvent suction device 75, the second connection portion 64, the organic solvent suction pipe 69, and the second organic solvent suction device 77 are used. However, it constitutes a processing suction unit.
  • FIG. 6 is a diagram showing the configuration of the third supply / suction unit 16.
  • the third nozzle pipe 13 has a third vertical direction portion 81 and a third horizontal direction portion 82.
  • the distal end portion of the third left-right direction portion 82 is connected to the base end portion (upper end portion) of the third up-down direction portion 81.
  • a third discharge port 12 is formed at the tip (lower end) of the third vertical portion 81.
  • the third supply / suction unit 16 includes a third common pipe 83 having one end side (left side in FIG. 6) connected to the third left-right direction portion 82 of the third nozzle pipe 13 and a third common pipe.
  • a third connecting portion 84 connected to the other end side of 83 (right side in FIG. 6), and a third drain pipe 85 connected to the third connecting portion 84 at one end side (left side in FIG. 6)
  • the first surface modifier pipe 86 having one end side (left side in FIG. 6) connected to the third connection portion 84, and one end side (left side in FIG. 6) connected to the third connection portion 84.
  • a second surface modifier pipe 87 and a surface modifier suction pipe 89 having one end side (left side in FIG. 6) connected to the third connection portion 84 are included.
  • An example of a surface modifier is a hydrophobizing agent.
  • the hydrophobizing agent may be a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent.
  • Silicon hydrophobizing agents are hydrophobizing agents that hydrophobize silicon (Si) itself and silicon-containing compounds.
  • the silicon hydrophobizing agent is, for example, a silane coupling agent.
  • the silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorohydrophobizing agent.
  • Non-chloro hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N-dimethylaminotrimethylsilane, N- (trimethylsilyl) ) Containing at least one of dimethylamine and an organosilane compound.
  • a metal-based hydrophobizing agent is a solvent that has a high coordination property, for example, and hydrophobizes the metal mainly through coordination bonds.
  • the hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.
  • the third common pipe 83 is provided with a third common valve 90 for opening and closing the third common pipe 83.
  • the third drainage pipe 85 is provided with a third drainage valve 91 for opening and closing the third drainage pipe 85.
  • the other end side of the third drainage pipe 85 is connected to a drainage facility outside the machine.
  • the first surface modifier pipe 86 is provided with a first surface modifier valve 92 for opening and closing the first surface modifier pipe 86.
  • the first surface modifier raw solution is supplied from the first surface modifier raw solution supply source to the other end side of the first surface modifier pipe 86.
  • the second surface modifier pipe 87 is provided with a second surface modifier valve 93 for opening and closing the second surface modifier pipe 87.
  • the second surface modifier raw solution is supplied from the second surface modifier raw solution supply source to the other end side of the second surface modifier pipe 87.
  • a first surface modifier suction device (first suction device) 95 is interposed downstream from the position where the third common valve 90 is interposed.
  • the first surface modifier suction device 95 is a diaphragm type suction device similar to the first organic solvent suction device 75.
  • the surface modifier suction pipe 89 is provided with a surface modifier suction valve 96 for opening and closing the surface modifier suction pipe 89.
  • a second surface modifier suction device (second suction device) 97 is connected to the other end side (tip) of the surface modifier suction pipe 89.
  • the second surface modifier suction device 97 is an ejector-type suction device similar to the second chemical / rinse solution suction device 57.
  • the first surface modifier pipe 86 is opened.
  • the first surface modifier stock solution from the second surface modifier second solution from the second surface modifier pipe 87 flows into the third connection portion 84, and the third connection portion 84.
  • the surface modifier is produced by mixing within.
  • This surface modifying agent is supplied to the third nozzle pipe 13, and the surface modifying agent is discharged downward from the third discharge port 12.
  • the first surface modifier pipe 86 is used for the first surface modification.
  • the agent stock solution is supplied to the third drainage pipe 85. Thereby, the 1st surface modifier stock solution in the 1st surface modifier piping 86 can be drained (discarded).
  • the second surface modifier pipe 87 causes the second surface modification.
  • the agent stock solution is supplied to the third drainage pipe 85. Thereby, the 2nd surface modifier stock solution in the 2nd surface modifier piping 87 can be drained (discarded).
  • the first surface modifier suction device 95 is operated by the control device 3 (the function of the first surface modifier suction device 95 is activated). In this operating state, the surface modifier contained in the third common pipe 83 is drawn into the first surface modifier suction device 95.
  • the suction force of the first surface modifier suction device 95 is relatively weak, and the suction speed is also relatively slow.
  • the second surface modifier suction device 97 is always in an operating state, for example.
  • the function of the second surface modifier suction device 97 is activated, and the surface modifier suction pipe is activated.
  • 89 is sucked, and the surface modifier contained in the surface modifier suction pipe 89, the third connection portion 84, the third common pipe 83, and the third nozzle pipe 13 is replaced with the surface modifier suction pipe. Pulled to 89.
  • the suction force of the second surface modifier suction device 97 is stronger than that of the first surface modifier suction device 95, and the suction speed is also the case of the first surface modifier suction device 95. Slow compared to.
  • the third common pipe 83, the third connection portion 84, the first surface modifier pipe 86, the first surface modifier valve 92, and the second surface modification are provided.
  • the material valve 93 constitutes a processing liquid supply unit.
  • the third common pipe 83, the first surface modifier suction device 95, the third connection portion 84, the surface modifier suction pipe 89, and the second surface constitutes a suction unit.
  • FIG. 7 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
  • the control device 3 is configured using, for example, a microcomputer.
  • An operation key 101 that is operated by a user of the substrate processing apparatus 1 or the like is connected to the control device 3.
  • the control device 3 includes an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit (not shown).
  • the storage unit stores a program executed by the arithmetic unit.
  • the storage unit includes a recipe storage unit 102 that stores a recipe for storing the contents of each process for the substrate W.
  • the recipe storage unit 102 includes a nonvolatile memory that can electrically rewrite data.
  • the operation key 101 By operating the operation key 101, the user can create a recipe by inputting execution details such as the number of rotations of the substrate W in each processing step.
  • the recipe created by operating the operation key 101 is stored (saved) in the recipe storage unit 102.
  • the recipes stored (saved) in the recipe storage unit 102 are the chemical solution supply recipe RE1 used for the execution of the chemical solution supply step (S3 in FIG. 8) and the organic solvent supply step (S5, S7 in FIG. 8). ) And an organic solvent supply recipe RE2 used for executing the surface modifier supply step (S6 in FIG. 8).
  • the chemical solution supply recipe RE1 defines processing conditions in the chemical solution supply process (S3 in FIG. 8). Specifically, processing conditions such as the rotation speed of the substrate W and the processing period in the chemical solution supply step (S3 in FIG. 8) are determined.
  • the chemical supply recipe RE1 specifies that a suction operation using the first chemical / rinse solution suction device 55 (see FIG. 4) is performed after the chemical is discharged. Based on such a chemical supply recipe RE1, a chemical supply process (S3 in FIG. 8) is executed.
  • the processing conditions in the first organic solvent supply step (S5 in FIG. 8) and the processing conditions in the second organic solvent supply step (S7 in FIG. 8) are defined. Specifically, the processing conditions such as the rotation speed of the substrate W and the processing period in the first organic solvent supply step (S5 in FIG. 8) and the second organic solvent supply step (S7 in FIG. 8) are determined. Yes. Further, the organic solvent supply recipe RE2 specifies that a suction operation using the first organic solvent suction device 75 (see FIG. 5) is performed after the organic solvent is discharged. Based on such an organic solvent supply recipe RE2, the first organic solvent supply step (S5 in FIG. 8) and the second organic solvent supply step (S7 in FIG. 8) are executed.
  • processing conditions in the surface modifier supply step are defined. Specifically, processing conditions such as the rotation speed of the substrate W and the processing period in the surface modifier supply step (S6 in FIG. 8) are determined. Further, the surface modifier supply recipe RE3 specifies that a suction operation using the first surface modifier suction device 95 (see FIG. 6) is performed after the surface modifier is discharged. Based on such a surface modifier supply recipe RE3, a surface modifier supply step (S6 in FIG. 8) is executed.
  • the storage unit includes the first suction flag 103A used for setting the suction mode in the chemical solution supply step (S3 in FIG. 8), the first organic solvent supply step (S5 in FIG. 8), and the second organic The second suction flag 103B used for setting the suction mode in the solvent supply step (S7 in FIG. 8), and the third suction flag 103B used for setting the suction mode in the surface modifier supply step (S6 in FIG. 8). And a suction flag 103C.
  • a predetermined value (5A [H] or 00 [H]) is selectively stored in each suction flag 103A, 103B, 103C.
  • 00 [H] is stored as an initial.
  • 5A [H] is stored in the first suction flag 103A.
  • the second 5A [H] is stored in the suction flag 103B.
  • 5A [H] is stored in the third suction flag 103C.
  • the suction flag is on.
  • 00 [H] is stored in the suction flags 103A, 103B, and 103C, the suction flag is turned off.
  • control device 3 has a built-in timer.
  • the timer counts (measures) an elapsed period from the end of the previous chemical solution supply step (S3 in FIG. 8) (that is, after the previous discharge of the chemical solution from the first discharge port 8).
  • the elapse period timer 104A and the previous first organic solvent supply step (S5 in FIG. 8) or after the previous second organic solvent supply step (S7 in FIG. 8) that is, the second Second elapsed period timer 104B for measuring (measuring) the elapsed period from the end of the previous discharge of organic solvent from discharge port 10 and the end of the previous surface modifier supply step (S6 in FIG. 8)
  • a third elapsed period timer 104C for measuring (measuring) the elapsed period from the later (that is, after the previous surface modifier discharge from the third discharge port 12).
  • control device 3 includes a spin motor 22, a counter member lifting / lowering unit 35, a blocking plate rotating unit 34, a first chemical / rinse solution suction device 55, a second chemical / rinse solution suction device 57, and a first organic solvent.
  • the operations of the suction device 75, the second organic solvent suction device 77, the first surface modifier suction device 95, the second surface modifier suction device 97, and the like are controlled.
  • the control device 3 also includes a first common valve 50, a first drain valve 51, a chemical liquid valve 52, a rinse liquid valve 53, a first chemical liquid / rinse liquid suction valve 54, and a second chemical liquid / rinse liquid suction.
  • the agent valve 92, the second surface modifier valve 93, the surface modifier suction valve 96, and the like are opened and closed.
  • the substrate W is carried into the processing unit 2 while being held by a hand (not shown) of a substrate transfer robot (not shown).
  • the arithmetic unit of the control device 3 reads a recipe corresponding to the substrate W from the recipe storage unit 102.
  • control parameters for sequentially executing the following steps are set.
  • the control apparatus 3 controls the processing unit 2, and performs a series of processes prescribed
  • FIG. 8 is a flowchart for explaining an example of substrate processing by the processing unit 2.
  • 9 to 12 are diagrams showing the chemical liquid discharge operation and the suction operation in the chemical liquid supply step (S3 in FIG. 8).
  • FIGS. 13 to 16 are diagrams showing the organic solvent discharging operation and suction operation in the first organic solvent supplying step (S5 in FIG. 8) or the second organic solvent supplying step (S7 in FIG. 8).
  • An example of substrate processing may be an etching process or a cleaning process.
  • the recipe read from the recipe storage unit 102 is always referred to.
  • an unprocessed substrate W is carried into the chamber 4 (step S1 in FIG. 8).
  • the substrate W is placed on the spin chuck 5 with its surface (chemical solution processing target surface) facing upward. Delivered. Thereafter, the substrate W is held on the spin chuck 5.
  • control device 3 starts the rotation of the substrate W by the spin motor 22 (step S2 in FIG. 8).
  • the substrate W is raised to a predetermined liquid processing speed (in the range of about 10 to 1200 rpm, for example, about 1000 rpm) and maintained at the liquid processing speed.
  • control device 3 performs a chemical solution supply process (step S3 in FIG. 8) for supplying a chemical solution to the upper surface of the substrate W.
  • the control device 3 opens the chemical liquid valve 52 and the first common valve 50 while closing the other valves.
  • the chemical solution is discharged from the first discharge port 8 formed on the substrate facing surface 29 of the blocking plate 27 toward the center of the upper surface of the substrate W.
  • the chemical solution supplied to the upper surface of the substrate W receives the centrifugal force due to the rotation of the substrate W and moves to the peripheral portion of the substrate W.
  • the entire upper surface of the substrate W is processed using the chemical solution.
  • the control device 3 closes the chemical valve 52. Thereby, as shown in FIG. 10, the discharge of the chemical solution from the first discharge port 8 is stopped. At this time, the chemical solution remains in the first nozzle pipe 9, the first common pipe 43, and the first connection portion 44.
  • the control device 3 activates only one function of the first chemical / rinse solution suction device 55 and the second chemical / rinse solution suction device 57 to suck the chemical in the first nozzle pipe 9. .
  • Which operation of the first chemical / rinsing liquid suction device 55 and the second chemical / rinsing liquid suction device 57 is to be activated depends on the first suction flag 103A corresponding to the first supply / suction unit 14. Determined by referring to the value.
  • the control device 3 closes the first common valve 50 and opens the first chemical / rinse solution suction valve 54 to open the first chemical / rinse solution suction device 55. Enable the working of.
  • the inside of the upstream portion of the first common pipe 43 with respect to the branch portion of the first chemical / rinse solution suction pipe 48 is sucked and remains inside the upstream portion as shown in FIG.
  • the chemical solution being drawn is drawn into the first chemical solution / rinse solution suction pipe 48 by a relatively weak suction force.
  • the suction of the chemical liquid is performed until the distal end surface of the chemical liquid moves back to a predetermined standby position set in the first left-right direction portion 42.
  • the control device 3 closes the first chemical / rinse solution suction valve 54 and the first common valve 50.
  • the control device 3 opens the second chemical liquid / rinse liquid suction valve 56 with the first common valve 50 being closed, and opens the second chemical liquid /
  • the function of the rinse liquid suction device 57 is validated.
  • the inside of the 1st connection part 44 is attracted
  • the control device 3 When all the chemical liquid is discharged from the first nozzle pipe 9, the first common pipe 43, the first connection portion 44, and the second chemical liquid / rinse liquid suction pipe 49, the control device 3 performs the second operation.
  • the chemical / rinse solution suction valve 56 and the first common valve 50 are closed.
  • the chemical supply step S3 is completed by closing the first common valve 50.
  • control device 3 performs a rinsing process (step S4 in FIG. 8) for supplying a rinsing liquid to the upper surface of the substrate W.
  • the control device 3 opens the rinse liquid valve 53 and the first common valve 50 while closing other valves.
  • the rinsing liquid is discharged from the first discharge port 8 formed on the substrate facing surface 29 of the blocking plate 27 toward the center of the upper surface of the substrate W.
  • the rinse liquid supplied to the upper surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W and moves to the peripheral edge of the substrate W. Thereby, the chemical
  • the control device 3 controls the spin motor 22 so that the rotational speed of the substrate W is liquid-treated while the entire upper surface of the substrate W is covered with the rinsing liquid.
  • the speed is gradually reduced from the speed to the paddle speed (zero or a low rotation speed of about 40 rpm or less. In the first substrate processing example, for example, about 10 rpm).
  • the rotation speed of the substrate W is maintained at the paddle speed. Thereby, the liquid film of the rinse liquid covering the entire upper surface of the substrate W is supported on the upper surface of the substrate W in a paddle shape.
  • the centrifugal force acting on the liquid film of the rinse liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, or the centrifugal force and the surface tension.
  • the centrifugal force acting on the rinse liquid on the substrate W is weakened, and the amount of the rinse liquid discharged from the substrate W is reduced.
  • the control device 3 closes the rinse liquid valve 53 and the first common valve 50. Thereby, the discharge of the rinse liquid from the first discharge port 8 is stopped. At this time, the rinse liquid remains in the first nozzle pipe 9, the first common pipe 43, and the first connection portion 44.
  • the control device 3 validates only the function of the first chemical / rinse solution suction device 55 with the first common valve 50 closed, and removes the rinse solution in the first nozzle pipe 9. Suction. As a result, the inside of the upstream portion of the first common pipe 43 with respect to the branch portion of the first chemical / rinse solution suction pipe 48 is sucked, and the rinse liquid remaining inside the upstream portion One chemical / rinse liquid suction pipe 48 is drawn by a relatively weak suction force. The suction of the rinsing liquid is performed until the front end surface of the rinsing liquid moves back to a predetermined standby position set in the first left-right direction portion 42. When the tip surface of the rinsing liquid is retracted to the standby position, the control device 3 closes the first chemical / rinsing liquid suction valve 54. Thereby, rinse process S4 is complete
  • control device 3 performs a first organic solvent supply step (step S5 in FIG. 8) in which the rinse liquid present on the upper surface of the substrate W is replaced with an organic solvent (for example, IPA). Specifically, the control device 3 controls the facing member lifting / lowering unit 35 to place the blocking plate 27 at a processing position between the proximity position and the retracted position.
  • an organic solvent for example, IPA
  • control device 3 opens the organic solvent valve 72 and the second common valve 70 while closing the other valves while maintaining the rotation of the substrate W at the paddle speed.
  • the organic solvent is discharged from the second discharge port 10 formed in the substrate facing surface 29 of the blocking plate 27 toward the center of the upper surface of the substrate W.
  • the organic solvent supplied to the upper surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W and moves to the peripheral edge of the substrate W. Thereby, the rinse liquid on the upper surface of the substrate W is replaced by the organic solvent.
  • the control device 3 closes the organic solvent valve 72 and the second common valve 70. Thereby, as shown in FIG. 14, the discharge of the organic solvent from the second discharge port 10 is stopped. At this time, the organic solvent remains in the second nozzle pipe 11, the second common pipe 63, and the second connection portion 64.
  • control device 3 validates only the function of one of the first organic solvent suction device 75 and the second organic solvent suction device 77 with the second common valve 70 closed, The organic solvent in the nozzle pipe 11 is sucked. Which of the first organic solvent suction device 75 and the second organic solvent suction device 77 is activated is referred to the value of the second suction flag 103B corresponding to the second supply / suction unit 15. Can be decided.
  • the control device 3 activates the first organic solvent suction device 75 to validate the function of the first organic solvent suction device 75.
  • the inside of the second common pipe 63 in the downstream portion (the portion on the second discharge port 10 side) of the intervening portion of the first organic solvent suction device 75 is sucked, as shown in FIG.
  • the organic solvent remaining in the downstream portion is drawn into the first organic solvent suction device 75 (region expanded by driving the diaphragm) with a relatively weak suction force.
  • the suction of the organic solvent is performed until the front end surface of the organic solvent moves back to a predetermined standby position set in the second left and right direction portion 62. At this time, the suction amount of the organic solvent is about 0.1 to 1 milliliter.
  • the control device 3 closes the second common valve 70.
  • the control device 3 opens the organic solvent suction valve 76 and validates the function of the second organic solvent suction device 77. Thereby, the inside of the second connection part 64 is sucked, and the organic solvent remaining in the second nozzle pipe 11 and the second common pipe 63 is removed from the second connection part as shown in FIG. 64 is drawn into the organic solvent suction pipe 69 by a relatively strong suction force.
  • the control device 3 sets the organic solvent suction valve 76 and The second common valve 70 is closed.
  • the first organic solvent supply step S5 is completed by closing the second common valve 70.
  • control device 3 performs a surface modifier supply process (step S6 in FIG. 8) in which the rinse liquid present on the upper surface of the substrate W is replaced with a liquid surface modifier.
  • the control device 3 maintains the blocking plate 27 in the processing position, and closes the other valves while closing the other valves, the first surface modifier valve 92, the second surface modifier valve 93, and the third Open the common valve 90.
  • the surface modifier is discharged from the third discharge port 12 formed in the substrate facing surface 29 of the blocking plate 27 toward the center of the upper surface of the substrate W.
  • the surface modifier supplied to the upper surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W and moves to the peripheral edge of the substrate W. Thereby, the organic solvent on the upper surface of the substrate W is replaced by the surface modifier.
  • the control device 3 closes the first surface modifier valve 92, the second surface modifier valve 93, and the third common valve 90. Thereby, the discharge of the surface modifier from the third discharge port 12 is stopped. At this time, the surface modifier remains in the third nozzle pipe 13, the third common pipe 83, and the third connection portion 84.
  • control device 3 validates only one of the functions of the first surface modifier suction device 95 and the second surface modifier suction device 97 while the third common valve 90 is closed. Then, the surface modifier in the third nozzle pipe 13 is sucked. Which of the first surface modifier suction device 95 and the second surface modifier suction device 97 is activated depends on the third suction flag 103C corresponding to the third supply / suction unit 16. Determined by referring to the value.
  • the control device 3 activates the first surface modifier suction device 95 to validate the function of the first surface modifier suction device 95. To do. As a result, the inside of the third common pipe 83 is sucked into the downstream portion (the portion on the third discharge port 12 side) of the first surface modifier suction device 95, and the upstream side. The surface modifier remaining inside the portion is drawn into the inside of the first surface modifier suction device 95 (region expanded by driving the diaphragm) with a relatively weak suction force. The suction of the surface modifying agent is performed until the front end surface of the surface modifying agent retreats to a predetermined standby position set in the second left and right direction portion 62. At this time, the suction amount of the surface modifier is about 0.1 to 1 ml. When the front end surface of the surface modifier is retracted to the standby position, the control device 3 closes the third common valve 90.
  • the control device 3 opens the surface modifier suction valve 96 and validates the function of the second surface modifier suction device 97.
  • the inside of the third connecting portion 84 is sucked, and the surface modifier remaining in the third nozzle pipe 13 and the third common pipe 83 passes through the third connecting portion 84 to the surface. It is drawn into the modifier suction pipe 89 by a relatively strong suction force.
  • the controller 3 changes the surface modification.
  • the material suction valve 96 and the third common valve 90 are closed.
  • the closing of the third common valve 90 ends the surface modifier supply step S6.
  • the control device 3 performs a second organic solvent supply process (step S7 in FIG. 8) in which the rinse liquid present on the upper surface of the substrate W is replaced with an organic solvent (for example, IPA). Specifically, the control device 3 maintains the blocking plate 27 in the processing position, maintains the rotation of the substrate W at the spin dry speed, and closes the other valves while closing the other valves. Open 70. As a result, the organic solvent is discharged from the second discharge port 10 toward the center of the upper surface of the substrate W as shown in FIG. The organic solvent supplied to the upper surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W and moves to the peripheral edge of the substrate W. Thereby, the surface modifier on the upper surface of the substrate W is replaced by the organic solvent.
  • an organic solvent for example, IPA
  • the control device 3 closes the organic solvent valve 72 and the second common valve 70. Thereby, as shown in FIG. 14, the discharge of the organic solvent from the second discharge port 10 is stopped. At this time, the organic solvent remains in the second nozzle pipe 11, the second common pipe 63, and the second connection portion 64.
  • control device 3 enables only one of the functions of the first organic solvent suction device 75 and the second organic solvent suction device 77 while the second common valve 70 is closed, The organic solvent in the nozzle pipe 11 is sucked.
  • Which of the functions of the first organic solvent suction device 75 and the second organic solvent suction device 77 is to be validated is referred to the value of the second suction flag 103B corresponding to the second supply / suction unit 15. Can be decided.
  • the control device 3 activates the first organic solvent suction device 75 to validate the function of the first organic solvent suction device 75.
  • the inside of the upstream portion of the second common pipe 63 with respect to the intervening portion of the first organic solvent suction device 75 is sucked and remains inside the upstream portion as shown in FIG.
  • the organic solvent is drawn into the inside of the first organic solvent suction device 75 (region expanded by driving the diaphragm) with a relatively weak suction force.
  • the suction of the organic solvent is performed until the front end surface of the organic solvent moves back to a predetermined standby position set in the second left and right direction portion 62. At this time, the suction amount of the organic solvent is about 0.1 to 1 milliliter.
  • the control device 3 closes the second common valve 70.
  • the control device 3 opens the organic solvent suction valve 76 and validates the function of the second organic solvent suction device 77. Thereby, the inside of the second connection part 64 is sucked, and the organic solvent remaining in the second nozzle pipe 11 and the second common pipe 63 is removed from the second connection part as shown in FIG. 64 is drawn into the organic solvent suction pipe 69 by a relatively strong suction force.
  • the control device 3 sets the organic solvent suction valve 76 and The second common valve 70 is closed.
  • the second organic solvent supply step S7 is completed by closing the second common valve 70.
  • a spin dry process for drying the substrate W is performed.
  • the control device 3 controls the opposing member lifting / lowering unit 35 to place the blocking plate 27 in the proximity position.
  • the blocking plate 27 blocks the upper surface of the substrate W from the surrounding space.
  • the control device 3 controls the spin motor 22 to move the substrate W to a drying rotational speed (for example, several thousand rpm) higher than the rotational speed in each step of the chemical solution supply step S3 to the second organic solvent supply step S7.
  • the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried.
  • the control device 3 controls the spin motor 22 to stop the rotation of the substrate W by the spin chuck 5 (step S9 in FIG. 8). Thereafter, the control device 3 controls the opposing member lifting / lowering unit 35 to raise the blocking plate 27 and place it in the retracted position.
  • the substrate W is unloaded from the chamber 4 (step S10 in FIG. 8).
  • the control device 3 causes a hand (not shown) of a substrate transfer robot (not shown) to enter the chamber 4. Then, the control device 3 holds the substrate W on the spin chuck 5 by the hand of the substrate transport robot. Thereafter, the control device 3 retracts the hand of the substrate transfer robot from the chamber 4. As a result, the cleaned substrate W is carried out of the chamber 4.
  • FIG. 17 is a flowchart for explaining in detail the discharge operation and the suction operation of the processing liquid in each processing liquid supply process (steps S3, S5 to S7 in FIG. 8).
  • step T1 when the predetermined processing liquid discharge start timing comes (YES in step T1), the control device 3 is used for the processing while closing other valves.
  • the processing solution valve (chemical solution valve 52, organic solvent valve 72 or surface modifier valve 92, 93) is opened (step T2), and the common valve (first common valve 50, second valve) corresponding to the treatment solution valve is opened. Open the common valve 70 or the third common valve 90).
  • the treatment liquid (chemical solution, organic solvent or surface modifier) is discharged from the discharge port (first discharge port 8, second discharge port 10 or third discharge port 12).
  • the control device 3 closes the processing liquid valve to be used for the processing (step T4). . Thereby, the discharge of the processing liquid from the discharge port is stopped.
  • an elapsed period timer (first elapsed period timer 104A, second elapsed period timer 104B, or third elapsed period timer 104C). Is started (start of the elapsed time measuring step. Step T5). Thereafter, the processing liquid discharge start timing is set in advance.
  • the control device 3 sets the corresponding suction flag (first suction flag 103A, second suction).
  • the value of the flag 103B or the third suction flag 103C) is referred to.
  • the arithmetic unit of the control device 3 selects the corresponding first suction device (first chemical / rinse fluid suction device 55, first The operation of the organic solvent suction device 75 or the first surface modifier suction device 95) is made effective to perform the suction operation of the processing liquid.
  • the arithmetic unit of the control device 3 causes the corresponding second suction device (second chemical liquid / rinse liquid suction device 57, The second organic solvent suction device 77 or the second surface modifier suction device 97) is activated to perform the suction operation of the processing liquid.
  • the elapsed period from the end of the stop of the process liquid discharge is less than the reference period.
  • the suction is performed with a relatively weak suction force.
  • the suction is performed with a relatively strong suction force.
  • the processing liquid (chemical solution, organic solvent, surface modifier, etc.) remaining in the nozzle pipes 9, 11, 13 is the next processing liquid. It continues to be used in the supply process. In this case, the processing liquid is sucked so that the front end surface of the processing liquid moves back to a predetermined position. Therefore, when the elapsed period from the end of the stop of the discharge of the processing liquid is less than the reference period, suction is performed with a relatively weak suction force. Thereby, the front end surface of the processing liquid can be accurately retracted to a predetermined position, and as a result, the fear of the processing liquid dropping out can be solved.
  • the processing liquid remaining in the nozzle pipes 9, 11, 13 and the common pipes 43, 63, 83 may change over time (temperature change or component change). It is not preferable to use such a treatment liquid as it is for the treatment, and it is necessary to discharge it outside the apparatus (perform so-called pre-dispensing) prior to execution of the next treatment liquid suction and supply step.
  • suction is performed with a strong suction force. Thereby, the process liquid which has changed with time can be discharged from the nozzle pipes 9, 11, 13 and the common pipes 43, 63, 83.
  • the processing liquid remaining in the nozzle pipes 9, 11, 13 and the common pipes 43, 63, 83 can be sucked in a mode suitable for the state of the processing liquid.
  • a first suction device composed of an ejector-type suction device similar to the second chemical / rinse fluid suction device 57 is used.
  • a chemical / rinse liquid suction device 112 may be provided.
  • the first supply / suction unit 14 includes a first chemical / rinse liquid suction pipe 111 having one end (left side in FIG. 18) connected to the first connecting portion 44, and a first chemical.
  • a first chemical / rinse liquid suction device 112 connected to the other end side (tip) of the rinse liquid suction pipe 111 and a suction valve 113 for opening and closing the first chemical / rinse liquid suction pipe 111 are provided. ing.
  • the suction force (suction speed) of the first chemical liquid / rinse liquid suction device 112 is changed by varying the air pressure and the pressure loss. It is set so as to be weaker (slower) than the second chemical liquid / rinse liquid suction device 57.
  • an ejector-type first chemical / rinse solution suction device 112 may be provided in the same manner as the modification shown in FIG. .
  • the first supply / suction unit 14 may be provided with only one suction device.
  • the first supply / suction unit 14 includes a suction pipe 121 in which one end side (left side in FIG. 19) is connected to the first connection portion 44, and the other end side (tip end) of the suction pipe 121.
  • the chemical / rinse liquid suction device (suction device) 122 and the suction pipe 121 Connected to the chemical / rinse liquid suction device (suction device) 122 and the suction pipe 121, and the flow rate adjustment for adjusting the suction force (suction speed) by adjusting the opening of the suction pipe 121.
  • a valve (suction force adjustment unit) 123 and a suction valve 124 for opening and closing the suction pipe 121 may be included.
  • the chemical / rinse solution suction device (suction device) 122 is an ejector-type suction device similar to the second chemical / rinse solution suction device 57, for example.
  • the flow rate adjusting valve 123 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. The same applies to other flow rate adjusting valves.
  • the flow rate adjusting valve 123 may be interposed not in the suction pipe 121 but in the first common pipe 43.
  • FIG. 20 is a schematic plan view for explaining the internal layout of the substrate processing apparatus 201 according to the second embodiment of the present invention.
  • the substrate processing apparatus 201 is a single-wafer type apparatus that processes substrates W such as silicon wafers one by one.
  • the substrate W is a disk-shaped substrate.
  • the substrate processing apparatus 201 includes a plurality of processing units 202 that process a substrate W with a processing solution, a load port LP on which a substrate container C that stores a plurality of substrates W processed by the processing unit 202 is placed, It includes transfer robots IR and CR that transfer the substrate W between the load port LP and the processing unit 202, and a control device 203 that controls the substrate processing apparatus 201.
  • the transfer robot IR transfers the substrate W between the substrate container C and the transfer robot CR.
  • the transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 202.
  • the plurality of processing units 202 have the same configuration, for example.
  • FIG. 21 is a schematic cross-sectional view for explaining a configuration example of the processing unit 202.
  • FIG. 22 is a longitudinal sectional view of the center axis nozzle 207.
  • FIG. 23 is a bottom view of the center axis nozzle 207.
  • the processing unit 202 includes a box-shaped chamber 204 and a spin chuck that holds a single substrate W in a horizontal posture in the chamber 204 and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W.
  • (Substrate holding unit) 205, opposing member 206 facing the upper surface of the substrate W held by the spin chuck 205, and the inside of the opposing member 206 are vertically inserted, and the substrate W held by the spin chuck 205
  • a central axis nozzle 207 for discharging the processing liquid toward the center of the upper surface, a chemical liquid supply unit 208 for supplying a chemical liquid to the central axis nozzle 207, and a rinse for supplying a rinse liquid to the central axis nozzle 207
  • the chamber 204 includes a box-shaped partition wall 213 that accommodates the spin chuck 205 and the nozzles, and an FFU (fan filter filter) serving as a blower unit that sends clean air (air filtered by a filter) into the partition wall 213 from above the partition wall 213.
  • the FFU 214 is disposed above the partition wall 213 and attached to the ceiling of the partition wall 213.
  • the FFU 214 sends clean air downward from the ceiling of the partition wall 213 into the chamber 204.
  • the exhaust duct 215 is connected to the bottom of the processing cup 212 and guides the gas in the chamber 204 toward an exhaust processing facility provided in a factory where the substrate processing apparatus 201 is installed. Therefore, a downflow (downflow) that flows downward in the chamber 204 is formed by the FFU 214 and the exhaust duct 215. The processing of the substrate W is performed in a state where a down flow is formed in the chamber 204.
  • the spin chuck 205 As the spin chuck 205, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed. Specifically, the spin chuck 205 includes a spin motor 216, a spin shaft 217 integrated with a drive shaft of the spin motor 216, and a disk-shaped spin base attached to the upper end of the spin shaft 217 substantially horizontally. 218.
  • a plurality of (three or more, for example, six) clamping members 219 are arranged at the peripheral edge thereof.
  • the plurality of sandwiching members 219 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 218.
  • a plurality of (three or more) opposing member support portions 220 for supporting the opposing member 206 from below are arranged on a circumference centered on the rotation axis A1.
  • the distance between the opposing member support portion 220 and the rotation axis A1 is set to be larger than the distance between the holding member 219 and the rotation axis A1.
  • the spin chuck 205 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state. By doing so, a vacuum suction type (vacuum chuck) that rotates the substrate W held on the spin chuck 205 may be adopted.
  • a vacuum suction type vacuum chuck
  • the facing member 206 is a driven facing member (that is, a blocking member) that rotates according to the spin chuck 205. That is, the opposing member 206 is supported by the spin chuck 205 so as to be integrally rotatable during the substrate processing.
  • the opposing member 206 includes a blocking plate 221, an engaging portion 222 provided on the blocking plate 221 so as to be able to move up and down, and a support portion 223 that engages with the engaging portion 222 and supports the blocking plate 221 from above. including.
  • the blocking plate 221 has a disk shape having a larger diameter than the substrate W.
  • the blocking plate 221 has a circular substrate facing surface 221a facing the entire upper surface of the substrate W on its lower surface, an annular flange 221b protruding downward at the peripheral edge of the substrate facing surface 221a, and a substrate facing surface 221a. And a spin chuck engaging portion 221c for engaging with the opposing member support portion 220.
  • a through hole 224 is formed in the center of the substrate facing surface 221a so as to penetrate the facing member 206 up and down.
  • the through hole 224 is partitioned by a cylindrical inner peripheral surface.
  • the engaging portion 222 includes a cylindrical portion 225 that surrounds the periphery of the through hole 224 and a flange portion 226 that extends radially outward from the upper end of the cylindrical portion 225 on the upper surface of the blocking plate 221.
  • the flange portion 226 is located above the flange support portion 228 described below, which is included in the support portion 223, and the outer periphery of the flange portion 226 has a larger diameter than the inner periphery of the flange support portion 228. .
  • the support portion 223 includes, for example, a substantially disc-shaped support portion main body 227, a horizontal flange support portion 228, and a connection portion 229 that connects the support portion main body 227 and the flange support portion 228.
  • the center axis nozzle 207 extends in the vertical direction along a vertical axis passing through the center of the shielding plate 221 and the substrate W, that is, the rotation axis A1.
  • the central axis nozzle 207 is disposed above the spin chuck 205 and passes through the internal space of the blocking plate 221 and the support portion 223.
  • the central axis nozzle 207 moves up and down together with the blocking plate 221 and the support portion 223.
  • the central axis nozzle 207 includes a cylindrical casing 230 that extends up and down in the through hole 224, and a first nozzle pipe 231, a second nozzle pipe 232, and a third nozzle pipe that pass up and down in the casing 230. 233 and a fourth nozzle pipe 234.
  • the casing 230 has a cylindrical outer peripheral surface 230 a and a facing surface 230 b that is provided at the lower end portion of the casing 230 and faces the center portion of the upper surface of the substrate W.
  • the first to fourth nozzle pipes 231 to 234 are inner tubes, respectively.
  • the support member 223 is coupled to a counter member lifting / lowering unit 247 for lifting the support member 223 and moving the counter member 206 up and down.
  • the facing member lifting / lowering unit 247 includes a servo motor, a ball screw mechanism, and the like.
  • the facing member lifting / lowering unit 247 lifts and lowers the facing member 206 and the first to fourth nozzle pipes 231 to 234 together with the support portion 223 in the vertical direction.
  • the counter member lifting / lowering unit 247 blocks between the proximity position where the substrate facing surface 221a of the blocking plate 221 is close to the upper surface of the substrate W held by the spin chuck 205 and the retracted position provided above the proximity position.
  • the plate 221 and the first to fourth nozzle pipes 231 to 234 are moved up and down.
  • the counter member lifting / lowering unit 247 can hold the blocking plate 221 at each position between the proximity position and the retracted position.
  • the supporting member lifting / lowering unit 247 can raise and lower the support portion 223 between a lower position (a position indicated by a broken line in FIG. 21) and an upper position (a position indicated by a solid line in FIG. 21).
  • the blocking plate 221 is close to the upper surface of the substrate W held by the spin chuck 205 (a position indicated by a broken line in FIG. 21), and a retreat position (a solid line in FIG. 21) is retracted greatly above the spin chuck 205. Can be moved up and down.
  • the flange support portion 228 and the flange portion 226 of the support portion 223 are engaged with each other, whereby the engagement portion 222, the blocking plate 221 and the central axis nozzle 207 are engaged. Is supported by the support portion 223. That is, the blocking plate 221 is suspended by the support portion 223.
  • the protrusion 228a protruding from the upper surface of the flange support portion 228 engages with the engagement hole 226a formed in the flange portion 226 with a space in the circumferential direction.
  • the blocking plate 221 is positioned in the circumferential direction with respect to the support portion 223.
  • the blocking plate 221 is also lowered from the retracted position. Thereafter, when the spin chuck engaging portion 221 c of the blocking plate 221 contacts the opposing member support portion 220, the blocking plate 221 and the central axis nozzle 207 are received by the opposing member support portion 220.
  • the opposing member lifting / lowering unit 247 lowers the support portion 223, the engagement between the flange support portion 228 and the flange portion 226 of the support portion 223 is released, and the engagement portion 222, the blocking plate 221 and the central axis nozzle 207 are released. Is detached from the support portion 223 and supported by the spin chuck 205. In this state, the blocking plate 221 is rotated accompanying the rotation of the spin chuck 205 (spin base 218).
  • the first nozzle pipe 231 includes a vertical portion extending along the vertical direction. A lower end of the first nozzle pipe 231 opens to the facing surface 230b of the casing 230 to form a first discharge port 231a.
  • the chemical solution from the chemical solution supply unit 208 is supplied to the first nozzle pipe 231.
  • the chemical liquid supply unit 208 includes a chemical liquid pipe 236 connected to the upstream end side of the first nozzle pipe 231 and a chemical liquid valve 237 interposed in the middle of the chemical liquid pipe 236. When the chemical liquid valve 237 is opened, the chemical liquid is discharged downward from the first discharge port 231a. When the chemical liquid valve 237 is closed, the discharge of the chemical liquid from the first discharge port 231a is stopped.
  • the chemical solution is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethylammonium hydroxide) And a liquid containing at least one of a surfactant and a corrosion inhibitor.
  • organic acid eg, citric acid, oxalic acid, etc.
  • organic alkali eg, TMAH: tetramethylammonium hydroxide
  • the second nozzle pipe 232 includes a vertical portion extending along the vertical direction.
  • the lower end of the second nozzle pipe 232 opens to the facing surface 230b of the casing 230 to form a second discharge port 232a.
  • the rinse liquid from the rinse liquid supply unit 209 is supplied to the second nozzle pipe 232.
  • the rinsing liquid supply unit 209 includes a rinsing liquid pipe 238 connected to the upstream end side of the second nozzle pipe 232 and a rinsing liquid valve 239 interposed in the middle of the rinsing liquid pipe 238. When the rinse liquid valve 239 is opened, the rinse liquid is discharged downward from the second discharge port 232a.
  • the rinse liquid is water.
  • the water is any of pure water (deionized water), carbonated water, electrolytic ion water, hydrogen water, ozone water, and ammonia water having a diluted concentration (for example, about 10 to 100 ppm).
  • the third nozzle pipe 233 includes a vertical portion extending along the vertical direction.
  • the lower end of the third nozzle pipe 233 opens to the facing surface 230b of the casing 230 to form a third discharge port 233a.
  • the hydrophobizing agent from the hydrophobizing agent supply unit 210 is supplied to the third nozzle pipe 233.
  • the hydrophobizing agent supply unit 210 includes a hydrophobizing agent pipe (treatment liquid pipe) 240 (same as a common pipe 251 to be described later) connected to the upstream end side of the third nozzle pipe 233 and a midway between the hydrophobizing agent pipe 240. And a hydrophobizing agent valve 241 (same as a common valve 260 described later) interposed in the part.
  • the hydrophobizing agent may be a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent.
  • Silicon hydrophobizing agents are hydrophobizing agents that hydrophobize silicon (Si) itself and silicon-containing compounds.
  • the silicon hydrophobizing agent is, for example, a silane coupling agent.
  • the silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chlorohydrophobizing agent.
  • Non-chloro hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N-dimethylaminotrimethylsilane, N- (trimethylsilyl) ) Containing at least one of dimethylamine and an organosilane compound.
  • a metal-based hydrophobizing agent is a solvent that has a high coordination property, for example, and hydrophobizes the metal mainly through coordination bonds.
  • the hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.
  • the fourth nozzle pipe 234 includes a vertical portion extending along the vertical direction.
  • the lower end of the fourth nozzle pipe 234 opens to the facing surface 230b of the casing 230 to form a fourth discharge port 234a.
  • the fourth nozzle pipe 234 is supplied with the liquid organic solvent from the organic solvent supply unit 211.
  • the fourth nozzle pipe 234 includes a vertical portion extending along the vertical direction.
  • the lower end of the fourth nozzle pipe 234 opens to the facing surface 230b of the casing 230 to form a fourth discharge port 234a.
  • the fourth nozzle pipe 234 is supplied with the liquid organic solvent from the organic solvent supply unit 211.
  • the organic solvent supply unit 211 includes an organic solvent pipe 242 connected to the upstream end side of the fourth nozzle pipe 234 and an organic solvent valve 243 interposed in the middle of the organic solvent pipe 242.
  • the organic solvent valve 243 When the organic solvent valve 243 is opened, a liquid organic solvent is discharged downward from the fourth discharge port 234a.
  • the organic solvent valve 243 is closed, the discharge of the liquid organic solvent from the fourth discharge port 234a is stopped.
  • the organic solvent is, for example, IPA (isopropyl alcohol).
  • IPA isopropyl alcohol
  • the organic solvent in addition to IPA, for example, methanol, ethanol, acetone, EG (ethylene glycol), and HFE (hydrofluoroether).
  • the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component.
  • a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.
  • the processing cup 212 is disposed outward (in a direction away from the rotation axis A1) from the substrate W held by the spin chuck 205.
  • the processing cup 212 surrounds the periphery of the spin base 218.
  • the processing liquid supplied to the substrate W is shaken off around the substrate W.
  • the upper end portion 212 a of the processing cup 212 that opens upward is disposed above the spin base 218. Accordingly, the processing liquid (chemical solution, rinse solution, hydrophobizing agent, organic solvent) discharged around the substrate W is received by the processing cup 212. Then, the processing liquid received by the processing cup 212 is sent to a collecting device or a draining device (not shown).
  • FIG. 24 is a diagram for explaining the configuration of the hydrophobizing agent supply unit 210 shown in FIG.
  • the hydrophobizing agent supply unit 210 includes a common pipe 251 connected to the first nozzle pipe 231 and a mixing valve unit MV connected to the first nozzle pipe 231 via the common pipe 251.
  • the mixing valve unit MV includes a connection portion 252 that supplies liquid to the first nozzle pipe 231 and a plurality of valves 259, 260, 262, 263, and 267.
  • the plurality of valves 259, 260, 262, 263, 267 are all on-off valves.
  • the mixing valve unit MV further includes a discharge pipe 253, a hydrophobizing agent supply pipe 255, a suction pipe 256, and a cleaning liquid supply pipe 257, which are connected to the connection portion 252, respectively.
  • the connecting portion 252 has a length along a predetermined direction.
  • the connecting portion 252 has a cylindrical (for example, cylindrical or rectangular) side wall 252a extending in the flow direction D1, one end wall 252b that closes one end of the side wall 252a, and the other end of the side wall 252a.
  • the other end wall 252c is formed inside the connection portion 252.
  • the distribution space SP1 extends along the distribution direction D1.
  • a discharge pipe 253, a common pipe 251, a hydrophobizing agent supply pipe 255, a suction pipe 256, and a cleaning liquid supply pipe 257 are connected to the side wall of the connection portion 252 in this order from one side (upper side in FIG. 24).
  • the common pipe 251 has a vertical portion 251a and a horizontal portion 251b.
  • the downstream end of the vertical portion 251 a is connected to the upstream end of the first nozzle pipe 231.
  • the downstream end of the left-right direction part 251b is connected to the upstream end of the up-down direction part 251a.
  • the upstream end of the left-right direction portion 251 b is connected to the connection portion 252.
  • a common valve 260 for opening and closing the common pipe 251 is interposed in the left and right direction portion 251b of the common pipe 251.
  • the common valve 260 is an air operated open / close valve. Examples of such air operated open / close valves include diaphragm valves, butterfly valves, needle valves, and the like.
  • the 1st suction device 261 is interposed in the left-right direction part 251b of the common piping 251 downstream from the common valve 260.
  • the first suction device 261 is a diaphragm type suction device.
  • the diaphragm-type suction device includes a cylindrical head interposed in the middle of the common pipe 251 and a diaphragm housed in the head, and the volume of a flow path formed in the head by driving the diaphragm. (Refer to JP, 2016-111306, A, etc.).
  • the first suction device 261 made of a diaphragm type suction device is an air operated suction device.
  • the diaphragm changes its shape and the volume in the head increases.
  • the common pipe 251 has a portion downstream of the first suction device 261.
  • the existing hydrophobizing agent is drawn into the head, and the inside of the downstream portion is sucked (that is, the hydrophobizing agent is sucked into the head according to the input of the ejection stop signal). Thereby, the function of the first suction device 261 is validated.
  • the supply of air to the inside of the first suction device 261 changes the shape of the diaphragm to reduce the volume in the head, thereby pushing out the liquid (processing liquid) sucked into the head (that is, the liquid is processed).
  • the hydrophobizing agent in the head is pushed out in accordance with the input of the discharge start signal). Thereby, the function of the first suction device 261 is invalidated.
  • a drive source (for example, an electromagnetic valve, a second drive source) for driving the common valve 260 and a drive source (for example, an electromagnetic valve, a first drive source) for driving the first suction device 261 are mutually connected. being independent. If the drive source for driving the common valve 260 and the drive source for driving the first suction device 261 are common, the first suction device 261 is interlocked with the opening and closing of the common valve 260. Will be sucked / released. Since the drive source for driving the common valve 260 and the drive source for driving the first suction device 261 are independent from each other, the opening / closing of the common valve 260 and the suction / Each of the suction release can be performed at an optimal operation timing.
  • the discharge pipe 253 is provided with a discharge valve 259 for opening and closing the discharge pipe 253.
  • the downstream end side of the discharge pipe 253 is connected to a drainage facility outside the machine.
  • the hydrophobizing agent supply pipe 255 is provided with a hydrophobizing agent supply valve 262 for opening and closing the hydrophobizing agent supply pipe 255.
  • the hydrophobizing agent is supplied from the hydrophobizing agent supply source to the upstream end side of the hydrophobizing agent supply pipe 255.
  • the suction pipe 256 is provided with a suction valve 263 for opening and closing the suction pipe 256.
  • a second suction device 264 is connected to the downstream end of the suction pipe 256.
  • the second suction device 264 is an ejector-type suction device.
  • the ejector type suction device includes a vacuum generator and an aspirator.
  • the ejector-type suction device has a stronger suction force (faster suction speed) and a higher liquid flow rate that can be sucked than a diaphragm-type suction device and a siphon-type suction device.
  • the second suction device 264 includes a fluid supply pipe 265 and a fluid supply valve 266 for switching between opening and closing of the fluid supply pipe 265.
  • the fluid supply valve 266 is, for example, an electromagnetic valve. In the energized state of the second suction device 264, the fluid supply valve 266 is opened, and the fluid flows into the fluid supply pipe 265, whereby the inside of the second suction device 264 is decompressed. Thereby, the inside of the suction pipe 256 is sucked. That is, the function of the second suction device 264 is validated.
  • a cleaning liquid supply valve 267 for opening and closing the cleaning liquid supply pipe 257 is interposed.
  • the cleaning liquid is supplied from the cleaning liquid supply source to the upstream end side of the cleaning liquid supply pipe 257.
  • the cleaning liquid is, for example, an organic solvent (for example, IPA), but water can also be used as the cleaning liquid.
  • the hydrophobizing agent supply valve 262 and the discharge valve 259 are opened in a state where other valves in the hydrophobizing agent supply unit 210 are closed, the hydrophobizing agent from the hydrophobizing agent supply pipe 255 is connected to the connection portion 252.
  • the hydrophobizing agent is discharged out of the connecting portion 252 through the discharge pipe 253 (pre-dispensing step).
  • connection portion cleaning step When the cleaning liquid supply valve 267 and the discharge valve 259 are opened while the other valves in the hydrophobizing agent supply unit 210 are closed, the cleaning liquid from the cleaning liquid supply pipe 257 flows into the connection portion 252 and this cleaning liquid Is discharged to the outside of the connection portion 252 through the discharge pipe 253 (connection portion cleaning step).
  • the suction amount of the hydrophobizing agent is about 0.1 to 1 milliliter.
  • FIG. 25 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 201.
  • the control device 203 is configured using, for example, a microcomputer.
  • the control device 203 includes an arithmetic unit 301 such as a CPU, a fixed memory device (not shown), a storage unit 302 such as a hard disk drive, and an input / output unit (not shown).
  • the storage unit 302 stores a program 303 executed by the arithmetic unit 301.
  • the storage unit 302 includes a recipe storage unit 304 that stores a recipe that defines the content of each process for the substrate W.
  • the recipe storage unit 304 is composed of a nonvolatile memory capable of electrically rewriting data.
  • the recipe storage unit 304 stores a process recipe 306, a pre-recipe 307, a post-recipe 308, and a flow recipe 309 created by operating the operation unit 305.
  • the process recipe 306 defines the processing content (including procedures and conditions; the same applies hereinafter) for the substrate W.
  • the pre-recipe 307 is an example of a preliminary operation recipe, and defines the content of pre-processing that is determined in advance.
  • the post recipe 308 is an example of a preliminary operation recipe, and defines the content of post-processing that is determined in advance.
  • the flow recipe 309 defines the execution order and number of executions of control according to the process recipe 306 (process recipe control), control according to the pre-recipe (pre-recipe control), and control according to the post-recipe
  • the substrate processing apparatus 201 carries a predetermined number (for example, 25) of substrates W constituting one lot in a state of being collectively stored in the substrate container C (see FIG. 20). In the substrate processing apparatus 201, one flow recipe 309 is set for each substrate container C.
  • control device 203 drives the spin motor 216, the opposing member lifting / lowering unit 247 and the like according to a predetermined program, and also activates the functions of the first suction device 261 and the second suction device 264 and the like. . Further, the control device 203 opens and closes the chemical liquid valve 237, the rinse liquid valve 239, the organic solvent valve 243, the discharge valve 259, the common valve 260, the hydrophobizing agent supply valve 262, the suction valve 263, the cleaning liquid supply valve 267, and the like.
  • FIG. 26 is a flowchart for explaining the contents of processing executed in the processing unit 202.
  • FIG. 27 is a flowchart showing the flow of pre-processing executed by the pre-recipe 307 in the processing unit 202.
  • FIG. 28 is a flowchart showing the flow of substrate processing executed by the process recipe 306 in the processing unit 202.
  • FIG. 29 is a flowchart showing a post-processing flow executed by the post recipe 308 in the processing unit 202.
  • FIG. 30A is a diagram illustrating a state of the processing unit 202 before the substrate W is carried into the substrate processing apparatus 201.
  • FIG. 30B is a diagram for explaining the pre-dispensing step T1.
  • FIG. 31 is a diagram for explaining the hydrophobizing agent supply step E6.
  • FIG. 32 is a diagram for explaining a first suction step performed after the hydrophobizing agent supply step E6.
  • FIG. 33 is a diagram for explaining the connecting portion cleaning step P1.
  • FIG. 34 is a diagram for explaining the pipe cleaning step P2.
  • FIG. 35 is a diagram for explaining the second suction step P3.
  • FIG. 36 is a diagram for explaining the filling step P4.
  • substrate processing executed by the processing unit 202 will be described with reference to FIGS. 30A to 36 will be referred to as appropriate. Further, the substrate processing example may be an etching process or a cleaning process.
  • Processing is performed in one or a plurality of processing units 202 on a plurality of substrates W (a plurality of substrates W accommodated in one substrate container C (see FIG. 20)) included in one lot.
  • substrate information indicating lot information contained in the substrate container C is received from the host computer. It is sent to the control device 203.
  • the host computer is a computer that supervises a plurality of substrate processing apparatuses installed in a semiconductor manufacturing factory. Based on the substrate information sent from the host computer, the control device 203 reads the flow recipe 309 for the lot from the recipe storage unit 304. And according to the flow recipe 309, pre-recipe control, process recipe control, and post-recipe control are performed in order.
  • control in accordance with the pre-recipe 307 is executed in each processing unit 202 (see FIG. 20), whereby pre-processing S11 (see FIG. 26) is performed.
  • the substrates W accommodated in one substrate container C are successively carried into the processing unit 202 one after another, and the substrate processing S12 is performed in the processing unit 202. (See FIG. 26).
  • control according to the process recipe 306 is executed a predetermined number of times equal to the number of substrates accommodated in the substrate container C, and when a series of predetermined times of processing is completed, each processing unit 202 follows the post recipe 308.
  • post-processing S13 (see FIG. 26) is executed.
  • the substrate processing S12 is executed only once between the preprocessing S11 and the postprocessing S13.
  • the substrate processing S12 is executed N times between the preprocessing S11 and the postprocessing S13. That is, the substrate processing S12 is continuously executed (continuous processing).
  • the preprocessing S11 will be described.
  • the front end surface F of the hydrophobizing agent is disposed at the standby position SP.
  • the standby position SP is a part of the flow direction set in the left-right direction portion 251b of the common pipe 251.
  • the pre-dispensing step T ⁇ b> 1 is a step for discharging the hydrophobizing agent present in the hydrophobizing agent supply pipe 255 from the hydrophobizing agent supply pipe 255.
  • the pre-dispensing step T ⁇ b> 1 is a step for discharging the hydrophobizing agent present in the hydrophobizing agent supply pipe 255 from the hydrophobizing agent supply pipe 255.
  • the hydrophobizing agent staying in the hydrophobizing agent supply pipe 255 or the connection part 252 is discharged from the hydrophobizing agent supply pipe 255 and the connection part 252.
  • the hydrophobizing agent changing with time is prevented from being used in the substrate processing S12.
  • the control device 203 opens the hydrophobizing agent supply valve 262 and the discharge valve 259 while the other valves in the hydrophobizing agent supply unit 210 are closed. .
  • the hydrophobizing agent from the hydrophobizing agent supply pipe 255 flows into the connection portion 252 and is discharged through the discharge pipe 253.
  • the substrate processing S12 (see FIG. 26) will be described.
  • the process recipe 306 read from the recipe storage unit 304 (see FIG. 25) is constantly referred to.
  • the unprocessed substrate W is carried into the chamber 204 (step E1 in FIG. 28).
  • the substrate W is placed on the spin chuck 205 with its surface (device formation surface) facing upward. Delivered. Thereafter, the substrate W is held on the spin chuck 205.
  • the control device 203 controls the spin motor 216 to start the rotation of the substrate W (step E2 in FIG. 28).
  • the substrate W is raised to a predetermined liquid processing speed (in the range of about 10 to 1200 rpm, for example, about 1000 rpm) and maintained at the liquid processing speed.
  • the control apparatus 203 controls the opposing member raising / lowering unit 247, and arrange
  • the control device 203 After the blocking plate 221 is disposed in the proximity position, the control device 203 then performs a chemical supply process E3 (see FIG. 28) for supplying a chemical to the upper surface of the substrate W.
  • the control device 203 opens the chemical liquid valve 237. Thereby, the chemical solution is discharged toward the center of the upper surface of the substrate W from the first discharge port 231a formed on the substrate facing surface 221a of the blocking plate 221.
  • the chemical solution supplied to the central portion of the upper surface of the substrate W moves to the peripheral portion of the substrate W under the centrifugal force due to the rotation of the substrate W. Thus, the entire upper surface of the substrate W is processed using the chemical solution.
  • control device 203 closes the chemical solution valve 237.
  • the control device 203 performs a rinsing step E4 (see FIG. 28) for supplying a rinsing liquid to the upper surface of the substrate W.
  • the control device 203 opens the rinse liquid valve 239.
  • the rinsing liquid is discharged from the second discharge port 232a formed on the substrate facing surface 221a of the blocking plate 221 toward the center of the upper surface of the substrate W.
  • the rinse liquid supplied to the center of the upper surface of the substrate W is moved to the peripheral portion of the substrate W under the centrifugal force due to the rotation of the substrate W. Thereby, the chemical
  • the control device 203 closes the rinse liquid valve 239 when a predetermined period has elapsed from the start of discharge of the rinse liquid. . Thereby, discharge of the rinse liquid from the 2nd discharge outlet 232a is stopped, and the rinse process E4 is complete
  • control device 203 performs a first organic solvent supply step E5 (see FIG. 28) in which the rinse liquid present on the upper surface of the substrate W is replaced with an organic solvent (for example, IPA).
  • an organic solvent for example, IPA
  • control device 203 opens the organic solvent valve 243 while maintaining the rotation of the substrate W at the liquid processing speed.
  • the organic solvent is discharged from the fourth discharge port 234a formed in the substrate facing surface 221a of the blocking plate 221 toward the center of the upper surface of the substrate W.
  • the organic solvent supplied to the center of the upper surface of the substrate W is moved to the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W. Thereby, the rinse liquid on the upper surface of the substrate W is replaced with the organic solvent.
  • the control device 203 switches the organic solvent valve 243 on. close. Thereby, the discharge of the organic solvent from the fourth discharge port 234a is stopped, and the first organic solvent supply step E5 is completed.
  • control device 203 performs a hydrophobizing agent supply step E6 (see FIG. 28) in which the organic solvent present on the upper surface of the substrate W is replaced with a liquid hydrophobizing agent. Specifically, the control device 203 opens the common valve 260 and the hydrophobizing agent supply valve 262 while closing the other valves in the hydrophobizing agent supply unit 210 while maintaining the blocking plate 221 in the close position. Before the start of the hydrophobizing agent supply step E6, the tip surface F of the hydrophobizing agent is disposed at the standby position SP.
  • the opening of the common valve 260 and the hydrophobizing agent supply valve 262 causes the hydrophobizing agent from the hydrophobizing agent supply pipe 255 to be supplied to the common pipe 251 through the connection portion 252.
  • the hydrophobizing agent is discharged from the third discharge port 233 a formed in the substrate facing surface 221 a of the blocking plate 221 toward the center of the upper surface of the substrate W.
  • the hydrophobizing agent supplied to the central portion of the upper surface of the substrate W moves to the peripheral portion of the substrate W under the centrifugal force due to the rotation of the substrate W. Thereby, the organic solvent on the upper surface of the substrate W is replaced by the hydrophobizing agent.
  • control device 203 supplies air to the first suction device 261. As a result, a small amount of the hydrophobizing agent sucked by the first suction device 261 is discharged to the common pipe 251.
  • the control device 203 supplies the common valve 260 and the hydrophobizing agent supply.
  • the valve 262 is closed. Thereby, as shown in FIG. 32, the discharge of the hydrophobizing agent from the third discharge port 233a is stopped.
  • the control device 203 activates the first suction device 261. As a result, the inside of the downstream portion (portion on the central axis nozzle 207 side) of the common pipe 251 with respect to the interposed portion of the first suction device 261 is sucked, and as shown in FIG.
  • the hydrophobizing agent remaining inside is drawn into the inside of the first suction device 261 (a region expanded by driving the diaphragm) (first suction step).
  • the suction amount of the first suction device 261 is determined such that the front end surface F of the hydrophobizing agent is retracted to a predetermined standby position SP set in the left-right direction portion 251b.
  • the suction amount of the hydrophobizing agent is about 0.1 to 1 milliliter.
  • the hydrophobizing agent supply step E6 ends based on the stoppage of the hydrophobizing agent discharge from the third discharge port 233a.
  • control device 203 performs a second organic solvent supply step E7 (see FIG. 28) in which the hydrophobizing agent present on the upper surface of the substrate W is replaced with an organic solvent (for example, IPA).
  • an organic solvent for example, IPA
  • control device 203 opens the organic solvent valve 243 while maintaining the rotation of the substrate W at the liquid processing speed.
  • the organic solvent is discharged from the fourth discharge port 234a formed in the substrate facing surface 221a of the blocking plate 221 toward the center of the upper surface of the substrate W.
  • the organic solvent supplied to the center of the upper surface of the substrate W is moved to the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W. Thereby, the hydrophobizing agent on the upper surface of the substrate W is replaced with the organic solvent.
  • the control device 203 switches the organic solvent valve 243 on. close. Thereby, the discharge of the organic solvent from the fourth discharge port 234a is stopped, and the second organic solvent supply step E7 is completed.
  • a spin dry process E8 for drying the substrate W is performed.
  • the control device 203 controls the spin motor 216 in a state where the blocking plate 221 is disposed in the proximity position, and based on the rotation speed in each step of the chemical solution supply step E3 to the second organic solvent supply step E7.
  • the substrate W is accelerated to a higher drying rotation speed (for example, several thousand rpm), and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the substrate W, and the substrate W is dried.
  • control device 203 controls the spin motor 216 to stop the rotation of the substrate W by the spin chuck 205 (step E9 in FIG. 28). Thereafter, the control device 203 controls the opposing member lifting unit 247 to raise the blocking plate 221 and place it at the retracted position.
  • the substrate W is unloaded from the chamber 204 (step E10 in FIG. 28). Specifically, the control device 203 causes the hand of the transfer robot CR to enter the chamber 204. Then, the control device 203 holds the substrate W on the spin chuck 205 by the hand of the transfer robot CR. Thereafter, the control device 203 retracts the hand of the transfer robot CR from the chamber 204. Thereby, the processed substrate W is unloaded from the chamber 204, and the substrate processing S12 ends.
  • control device 203 first executes the connection portion cleaning step P1 (see FIG. 29).
  • connection part cleaning step P1 the control device 203 opens the cleaning liquid supply valve 267 and the discharge valve 259 as shown in FIG. 33 with the other valves in the hydrophobizing agent supply unit 210 closed.
  • the cleaning liquid from the cleaning liquid supply pipe 257 flows into the connection part 252, and the cleaning liquid flows through the connection part 252 and is then discharged to the discharge pipe 253.
  • the hydrophobizing agent present inside the connection part 252 can be pushed out of the connection part 252 using the cleaning liquid.
  • the control device 203 closes the discharge valve 259 as shown in FIG. 34 while the cleaning liquid supply valve 267 remains open. And the common valve 260 is opened. As a result, the cleaning liquid that has flowed into the connection portion 252 is guided to the common pipe 251. That is, the connecting part cleaning process P1 is finished, and the pipe cleaning process P2 (see FIG. 29) is started.
  • a predetermined period for example, 2 to 3 seconds
  • the cleaning liquid guided to the common pipe 251 is discharged from the third discharge port 233a through the inside of the common pipe 251.
  • the inside of the common pipe 251 is cleaned with the cleaning liquid.
  • the control device 203 stops driving the first suction device 261.
  • a small amount of the hydrophobizing agent sucked by the first suction device 261 is discharged to the common pipe 251.
  • the cleaning liquid supply valve 267 is closed. Thereby, the pipe cleaning process P2 is completed.
  • the control device 203 is configured so that the suction valve 263 and the common valve are in a state where the operation of the second suction device 264 is activated by opening the fluid supply valve 266.
  • the inside of the suction pipe 256 is sucked.
  • the cleaning liquid staying inside the connection portion 252 and all the cleaning liquid staying inside the common pipe 251 are sucked by the second suction device 264.
  • the cleaning liquid supply valve 267 is closed.
  • the filling process P4 is a process in which the common pipe 251 is filled (supplied) with the hydrophobizing agent, thereby arranging the front end surface F at the standby position SP.
  • the control device 203 opens the common valve 260 and the hydrophobizing agent supply valve 262 with the other valves in the hydrophobizing agent supply unit 210 closed.
  • the hydrophobizing agent from the hydrophobizing agent supply pipe 255 is supplied to the common pipe 251 through the connection portion 252.
  • the control device 203 closes the hydrophobizing agent supply valve 262. Thereby, as shown in FIG. 36, the front end surface F of the hydrophobizing agent is disposed at the standby position SP.
  • the hydrophobizing agent present in the common pipe 251 is sucked, and the tip surface F of the hydrophobizing agent is retracted.
  • the suction step the first suction step (see FIG. 32) in which the tip surface F of the hydrophobizing agent is disposed at the standby position SP, and the tip surface F of the hydrophobizing agent is retracted from the upstream end of the connecting portion 252.
  • the second suction step P3 is selectively executed.
  • the amount of the hydrophobizing agent sucked (the amount of the hydrophobizing agent drained) is reduced as compared with the second suction step P3. Therefore, compared with the case where 2nd suction process P3 is performed in all the suction processes, the consumption of the hydrophobizing agent can be reduced.
  • the first suction step is executed when the hydrophobizing agent in the common pipe 251 can be used for the next substrate processing S12, and the second suction step P3 is performed when the hydrophobizing agent in the common pipe 251 is the next. You may perform when it cannot use for board
  • the hydrophobizing agent in the common pipe 251 can be sucked while reducing the consumption of the hydrophobizing agent.
  • the front end surface F of the hydrophobizing agent after suction is accurately controlled. be able to.
  • the suction step P3 since suction is performed using the second suction device 264 made of an ejector device or the like, a long distance can be sucked and the suction can be performed in a short time. it can.
  • the first suction process is executed as the suction process.
  • the second suction process P3 is executed.
  • the hydrophobizing agent does not stay in the common pipe 251 for a long time. Therefore, from the viewpoint of reducing the consumption of the hydrophobizing agent and / or suppressing the decrease in throughput, the first suction step is executed during the continuous processing, and the tip surface F of the hydrophobizing agent after the suction is placed at the standby position. Be placed.
  • the hydrophobizing agent may change with time or decrease in temperature. Since the hydrophobizing agent changing with time or the hydrophobizing agent whose temperature has decreased cannot be used in the next substrate processing S12, suction is performed in the post-processing S13. As this suction, the second suction step P3 is executed. For this reason, after the end of the post-processing S13, the inside of the common pipe 251 and the connection portion 252 are kept empty.
  • the chemical / rinse liquid suction device (suction device) 122 A flow rate adjusting valve 123 may be provided.
  • a diaphragm-type suction device may be employed as the first suction device, and the second and / or third supply / suction may be employed.
  • a siphon type suction device may be adopted as the first suction device.
  • the supply / suction units 14, 15, 16 are provided corresponding to all of the three nozzle pipes 9, 11, 13, supply / supply to at least one of the three nozzle pipes 9, 11, 13 is performed.
  • a suction unit may be provided.
  • the treatment liquid piping in which the discharge ports 8, 10, and 12 are formed on the substrate facing surface 29 has been described. Also in this case, it is preferable that the discharge port of the nozzle is not movable in the left-right direction (that is, the direction along the surface of the substrate W).
  • the organic solvent is not limited to IPA, and includes at least one of IPA, methanol, ethanol, HFE (hydrofluoroether), and acetone.
  • the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component.
  • a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.
  • a diaphragm-type suction device has been described as an example of the first suction device 261.
  • a siphon-type suction device may be employed.
  • the siphon-type suction device has a pipe and sucks (drains) the hydrophobizing agent inside the common pipe 251 using the principle of siphon in a state where the inside of the pipe is filled with liquid. In the siphon type suction device, energy consumption for suction is suppressed.
  • the cleaning process performed prior to the second suction process P3 has been described as including both the connection part cleaning process P1 and the pipe cleaning process P2. However, as the cleaning process, It is sufficient if at least one of them is included. In addition, the cleaning process may not be performed prior to the second suction process P3.
  • the second suction step P3 may be performed in the pre-processing S11.
  • the second suction process P3 may be performed before or after the pre-dispensing process T1.
  • the pretreatment S11 the removal of the hydrophobizing agent remaining in the common pipe 251 and the removal of the hydrophobizing agent present in the hydrophobizing agent supply pipe 255 can be performed. It is possible to reliably prevent the hydrophobizing agent that has changed over time or the temperature thereof from being supplied to the substrate W at the start of the substrate processing S12.
  • the second suction step P3 may be performed in both the post-processing bowl S13 and the pre-processing S11.
  • the second suction step P3 can be executed after each substrate processing S12 or before each substrate processing S12 by setting the number of times the process recipe 306 is executed once. .
  • the second suction step P3 is defined by the process recipe 306, not in the pre-processing S11 defined by the pre-recipe 307 and / or the post-processing S13 defined by the post-recipe 308. It may be executed in the substrate processing S12.
  • the suction step may be defined.
  • the suction process P3 in the suction process that is executed in a period in which the period from the end of discharge of the hydrophobizing agent from the previous discharge port 233a to the start of the next discharge is less than a predetermined period, The suction process P3 may be defined.
  • the chemical liquid supply unit 208, the rinsing liquid supply unit 209, and the organic solvent supply unit 211 may have the same configuration as the hydrophobizing agent supply unit 210 as shown in FIG. .
  • the first suction step and the second suction step P3 may be selectively executed also in these units 208, 209, and 211. That is, the treatment liquid to be sucked is not limited to the hydrophobizing agent, and may be another treatment liquid (chemical liquid, rinse liquid, organic solvent, etc.).
  • As the cleaning liquid a liquid type corresponding to the processing liquid to be sucked is employed.
  • the discharge port (discharge ports 231a to 234a) may be provided as a single nozzle that is not incorporated in the blocking plate 221. .
  • the present invention can be suitably applied to this nozzle when the discharge port of the nozzle cannot move in the left-right direction (that is, the direction along the surface of the substrate W).
  • the substrate processing apparatuses 1 and 201 are apparatuses that process the disk-shaped substrate W has been described.
  • An apparatus for processing a square substrate may also be used.
  • 1 substrate processing device 3: control device 5: spin chuck (substrate holding unit) 8: First discharge port (discharge port) 9: 1st nozzle piping 10: 2nd discharge port (discharge port) 11: 2nd nozzle piping 12: 3rd discharge port 13: 3rd nozzle piping 14: 1st suction unit (processing liquid supply unit, suction unit) 15: Second suction unit (processing liquid supply unit, suction unit) 16: Third suction unit (treatment liquid supply unit, suction unit) 55: 1st chemical

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Abstract

La présente invention concerne un dispositif de traitement de substrat, comprenant : une unité de maintien de substrat qui maintient un substrat; une tuyauterie de solution de traitement qui communique avec une ouverture d'éjection servant à éjecter une solution de traitement vers une surface principale du substrat; une unité de fourniture de solution de traitement servant à fournir une solution de traitement à la tuyauterie de solution de traitement; une unité d'aspiration servant à aspirer la solution de traitement présente dans la tuyauterie de solution de traitement; et un dispositif de commande qui commande l'unité de fourniture de solution de traitement et l'unité d'aspiration. Le dispositif de commande exécute une étape de fourniture de solution de traitement consistant à fournir la solution de traitement, au moyen de l'unité de fourniture de solution de traitement, à la tuyauterie de solution de traitement de façon à être éjectée par l'ouverture d'éjection, et une étape d'aspiration consistant à aspirer, au moyen de l'unité d'aspiration, la solution de traitement présente dans la tuyauterie de solution de traitement. À l'étape d'aspiration, le dispositif de commande exécute sélectivement une première étape d'aspiration consistant à aspirer la solution de traitement et à disposer, après aspiration, une face d'extrémité distale de la solution de traitement en une position de repos prédéterminée dans la tuyauterie de solution de traitement, ou une seconde étape d'aspiration consistant à aspirer la solution de traitement et à amener la face d'extrémité distale de la solution de traitement à s'éloigner de la position de repos.
PCT/JP2017/032332 2016-09-21 2017-09-07 Dispositif et procédé de traitement de substrat WO2018056067A1 (fr)

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CN201780046189.XA CN109564860B (zh) 2016-09-21 2017-09-07 基板处理装置以及基板处理方法
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