WO2018033817A1 - Dispositif d'affichage et appareil électronique - Google Patents

Dispositif d'affichage et appareil électronique Download PDF

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Publication number
WO2018033817A1
WO2018033817A1 PCT/IB2017/054713 IB2017054713W WO2018033817A1 WO 2018033817 A1 WO2018033817 A1 WO 2018033817A1 IB 2017054713 W IB2017054713 W IB 2017054713W WO 2018033817 A1 WO2018033817 A1 WO 2018033817A1
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WO
WIPO (PCT)
Prior art keywords
film
transistor
insulating film
display device
conductive film
Prior art date
Application number
PCT/IB2017/054713
Other languages
English (en)
Japanese (ja)
Inventor
高橋圭
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Priority to JP2018534204A priority Critical patent/JP6916794B2/ja
Priority to KR1020197005731A priority patent/KR102433524B1/ko
Priority to US16/325,226 priority patent/US10642110B2/en
Publication of WO2018033817A1 publication Critical patent/WO2018033817A1/fr
Priority to US16/846,519 priority patent/US11086175B2/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
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    • G—PHYSICS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
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    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Definitions

  • the present invention relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a semiconductor device, a light-emitting device, a display device, an electronic device, a lighting device, a driving method thereof, or a manufacturing method thereof.
  • the present invention relates to an electronic device including a display device, a light-emitting device, a lighting device, or a manufacturing method thereof.
  • a semiconductor device refers to any device that can function by utilizing semiconductor characteristics.
  • a transistor, a semiconductor circuit, an arithmetic device, a memory device, or the like is one embodiment of a semiconductor device.
  • the imaging light emitting device, the display device, the electronic device, the lighting device, and the electronic device may include a semiconductor device.
  • High-definition panels used in high-end smartphones and the like are required to have a narrow frame to improve the visual impression.
  • LCD liquid crystal display
  • LTPS Low Temperature Poly-Silicon
  • touch sensor common driver circuit and gate driver circuit are installed on both sides of the panel long side.
  • a technique for arranging and narrowing the frame width has been studied (Patent Document 1).
  • an object of one embodiment of the present invention is to provide a display device with a narrow frame. Another object is to provide a highly recognizable display device. Another object is to provide a display device with low power consumption. Another object is to provide a novel display device. Another object is to provide an electronic device including the display device (display panel). Another object is to provide a new electronic device.
  • the first driver circuit includes a first transistor
  • the second driver circuit includes a second transistor
  • one of a source and a drain of the first transistor includes a first wiring and Electrically connected
  • one of a source and a drain of the second transistor is electrically connected to the second wiring
  • the second transistor includes a metal oxide in a channel formation region
  • the surface of the first substrate In the direction perpendicular to the first driving circuit, at least a part of the first driving circuit and the second driving circuit overlap, the first driving circuit constitutes a gate driver, and the second driving circuit constitutes a common driver.
  • the first transistor may include a metal oxide in a channel formation region.
  • Another embodiment of the present invention includes a first driver circuit and a first wiring over the first substrate, an insulating film over the first driver circuit, and a second driver circuit over the insulating film, A third driver circuit and a second wiring;
  • the first driver circuit includes a first transistor;
  • the second driver circuit includes a second transistor; and
  • the third driver circuit includes: A third transistor; one of a source and a drain of the first transistor is electrically connected to the first wiring; and one of a source and a drain of the second transistor is electrically connected to the second wiring
  • the second transistor includes a metal oxide in a channel formation region, and at least part of the first driver circuit and the second driver circuit overlap in a direction perpendicular to the surface of the first substrate; At least part of the first drive circuit and the third drive circuit overlap, and the first drive circuit and Third drive circuit constitute a gate driver, the second driver circuit is a display device which constitutes the common driver.
  • Each of the first transistor and the third transistor may include a metal oxide in a channel formation region.
  • the first drive circuit has a larger area than the second drive circuit and the third drive circuit.
  • the first driver circuit includes a first transistor; the second driver circuit includes a second transistor; and one of a source and a drain of the first transistor is And one of a source and a drain of the second transistor is electrically connected to the first wiring, the first transistor includes a metal oxide in a channel formation region, In a direction perpendicular to the surface of one substrate, at least part of the first drive circuit and the second drive circuit overlap, the first drive circuit constitutes a common driver, and the second drive circuit has a gate driver.
  • the second transistor may include a metal oxide in a channel formation region.
  • One of the source and the drain of the first transistor is electrically connected to the second wiring, and one of the source and the drain of the second transistor is The first transistor is electrically connected to the first wiring.
  • the first transistor includes a metal oxide in a channel formation region, and the first driver circuit and the second driver circuit are arranged in a direction perpendicular to the surface of the first substrate. At least partly overlaps, and at least part of the second and third drive circuits overlap.
  • First drive circuit constitutes a common driver
  • the second driver circuit and the third drive circuit is a display device which constitutes the gate driver.
  • Each of the second transistor and the third transistor may include a metal oxide in a channel formation region.
  • the second drive circuit has a larger area than the first drive circuit and the third drive circuit.
  • the first transistor and the second transistor may overlap at least partially in a direction perpendicular to the surface of the first substrate.
  • the first wiring is a gate line
  • the second wiring is a common line.
  • the first transistor includes a first gate electrode, a first gate insulating layer over the first gate electrode, a semiconductor layer over the first gate insulating layer, a source electrically connected to the semiconductor layer, and A drain, a second gate insulating layer over the source and the drain, and a second gate electrode over the second gate insulating layer are provided, and one lower surface of the source and the drain is in contact with the upper surface of the gate line.
  • the second transistor includes a first gate electrode, a first gate insulating layer over the first gate electrode, a semiconductor layer over the first gate insulating layer, a source electrically connected to the semiconductor layer, and It has a drain, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer, and one upper surface of the source and the drain is in contact with the lower surface of the common line.
  • a module in which a connector for example, an FPC (Flexible printed circuit) or TCP (Tape Carrier Package) is attached to a display device (display panel), a module having a printed wiring board at the end of TCP, Alternatively, a module in which an IC (Integrated Circuit) is directly mounted on a substrate over which a display element is formed by a COG (Chip On Glass) method may include a display device.
  • a connector for example, an FPC (Flexible printed circuit) or TCP (Tape Carrier Package)
  • TCP Transmission Carrier Package
  • a module in which an IC (Integrated Circuit) is directly mounted on a substrate over which a display element is formed by a COG (Chip On Glass) method may include a display device.
  • COG Chip On Glass
  • a display device with a narrow frame can be provided.
  • a display device including a stack structure driver circuit can be provided.
  • a display device in which a gate driver and a common driver are stacked can be provided.
  • a highly recognizable display device can be provided.
  • a display device with low power consumption can be provided.
  • a novel display device can be provided.
  • an electronic device including the display device (display panel) can be provided.
  • a novel electronic device can be provided.
  • FIG. 10 illustrates a display device.
  • FIGS. 3A and 3B are a schematic diagram and a cross-sectional schematic diagram illustrating a driving circuit portion.
  • FIGS. 4A and 4B illustrate a display device and a detection element.
  • 8A and 8B are a top view and cross-sectional views illustrating a display device. The figure explaining the structure of a detection element.
  • FIG. 10 illustrates a display device. Sectional drawing explaining a display apparatus. Sectional drawing explaining a display apparatus.
  • FIGS. 3A and 3B are a schematic diagram and a cross-sectional schematic diagram illustrating a driving circuit portion.
  • FIGS. FIGS. 3A and 3B are a schematic diagram and a cross-sectional schematic diagram illustrating a driving circuit portion.
  • FIGS. FIGS. 3A and 3B are a schematic diagram and a cross-sectional schematic diagram illustrating a driving circuit portion.
  • FIGS. FIGS. 3A and 3B are a schematic diagram and a cross-
  • FIGS. 3A and 3B are a schematic diagram and a cross-sectional schematic diagram illustrating a driving circuit portion.
  • FIGS. 4A and 4B are a top view and a cross-sectional view of a transistor. Sectional drawing explaining a display apparatus. 10A and 10B each illustrate an electronic device.
  • a transistor is an element having at least three terminals including a gate, a drain, and a source.
  • a channel formation region is provided between the drain (drain terminal, drain region or drain electrode) and the source (source terminal, source region or source electrode), and current is passed through the drain, channel formation region, and source. It can be shed. Note that in this specification and the like, a channel formation region refers to a region through which a current mainly flows.
  • the functions of the source and drain may be switched when transistors having different polarities are employed or when the direction of current changes during circuit operation. Therefore, in this specification and the like, the terms source and drain can be used interchangeably.
  • “electrically connected” includes a case of being connected via “thing having some electric action”.
  • the “thing having some electric action” is not particularly limited as long as it can exchange electric signals between connection targets.
  • “thing having some electric action” includes electrodes, wiring, switching elements such as transistors, resistance elements, inductors, capacitors, and other elements having various functions.
  • parallel means a state in which two straight lines are arranged at an angle of ⁇ 10 ° to 10 °. Therefore, the case of ⁇ 5 ° to 5 ° is also included.
  • Very refers to a state in which two straight lines are arranged at an angle of 80 ° to 100 °. Therefore, the case of 85 ° to 95 ° is also included.
  • the terms “film” and “layer” can be interchanged with each other.
  • the term “conductive layer” may be changed to the term “conductive film”.
  • the term “insulating film” may be changed to the term “insulating layer” in some cases.
  • off-state current refers to drain current when a transistor is off (also referred to as a non-conduction state or a cutoff state).
  • the off state is a state where the voltage Vgs between the gate and the source is lower than the threshold voltage Vth in the n-channel transistor, and the voltage Vgs between the gate and the source in the p-channel transistor unless otherwise specified. Is higher than the threshold voltage Vth.
  • the off-state current of an n-channel transistor sometimes refers to a drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.
  • the off-state current of a transistor having a channel width W may be represented by a current value flowing around the channel width W.
  • the current value flows around a predetermined channel width (for example, 1 ⁇ m).
  • the unit of off-current may be represented by a unit having a dimension of current / length (for example, A / ⁇ m).
  • a metal oxide is a metal oxide in a broad expression.
  • Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply OS), and the like.
  • oxide semiconductors also referred to as oxide semiconductors or simply OS
  • the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide has at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor, or OS for short.
  • OS FET it can be said to be a transistor including a metal oxide or an oxide semiconductor.
  • metal oxides containing nitrogen may be collectively referred to as metal oxides.
  • a metal oxide containing nitrogen may be referred to as a metal oxynitride.
  • CAAC c-axis aligned crystal
  • CAC cloud aligned complementary
  • a CAC-OS or a CAC-metal oxide has a conductive function in part of a material and an insulating function in part of the material, and the whole material is a semiconductor. It has the function of. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a semiconductor layer of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is an electron serving as carriers. It is a function that does not flow. A function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.
  • CAC-OS or CAC-metal oxide includes a conductive region and an insulating region.
  • the conductive region has the above-described conductive function
  • the insulating region has the above-described insulating function.
  • the conductive region and the insulating region may be separated at the nanoparticle level.
  • the conductive region and the insulating region may be unevenly distributed in the material, respectively.
  • the conductive region may be observed with the periphery blurred and connected in a cloud shape.
  • the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.
  • CAC-OS or CAC-metal oxide is composed of components having different band gaps.
  • CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region.
  • the carrier when the carrier flows, the carrier mainly flows in the component having the narrow gap.
  • the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving force, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.
  • CAC-OS or CAC-metal oxide can also be called a matrix composite material (metal matrix composite) or a metal matrix composite material (metal matrix composite).
  • a gate line is a conductive film and is electrically connected to gates of a plurality of transistors included in an electronic device such as a display device, for example.
  • the common line is a conductive film and is electrically connected to one electrode of a plurality of display elements included in an electronic device such as a display device.
  • a gate driver is a circuit having a function of supplying a voltage to a gate line.
  • a common driver is a circuit having a function of supplying a voltage to a common line.
  • FIG. 1A is a schematic diagram when the display device 700 is viewed from above.
  • the display device 700 has a display region 305 on a substrate 710, and a gate driver 301, a source driver 302, and a common driver 303 are arranged around the display region.
  • FIG. 1A illustrates an example in which the gate driver 301 is formed closer to the substrate 710 than the common driver 303.
  • FIG. 1B is a schematic view of FIG. 1A viewed from obliquely above. As in FIG. 1A, the gate driver 301 is formed closer to the substrate 710 than the common driver 303.
  • the gate driver 301 and the common driver 303 are stacked, so that the area occupied by the driver circuit in the display device 700 can be reduced and the frame can be narrowed. Can be achieved.
  • FIG. 2A is a schematic diagram showing the positional relationship between the gate driver 301 and the common driver 303.
  • the gate driver 301 is electrically connected to the first wirings G (1) to G (m)
  • the common driver 303 is electrically connected to the first conductive films C1 (1) to C1 (p).
  • the gate driver 301 and the common driver 303 are stacked, and the first wirings G (1) to G (m) and the first conductive film C1 (1) are stacked. ) To C1 (p) are also stacked.
  • FIG. 2B is a schematic cross-sectional view illustrating the positional relationship between the gate driver 301 and the common driver 303.
  • the gate driver 301 has a first transistor 780 and the common driver 303 has a second transistor 880.
  • the first transistor 780 includes a conductive film 704 over the substrate 710, an insulating film 706 over the conductive film 704, a semiconductor film 718 over the insulating film 706, a conductive film 712A and a conductive film 712B over the semiconductor film 718, An insulating film 721A over the conductive films 712A and 712B and a conductive film 724B over the insulating film 721A are provided.
  • the conductive film 704 functions as a first gate electrode
  • the insulating film 706 functions as a first gate insulating layer
  • the semiconductor film 718 functions as a semiconductor layer capable of forming a channel
  • the conductive film 712A functions as a source.
  • the conductive film 712B functions as the other of the source electrode and the drain electrode
  • the insulating film 721A functions as the second gate insulating layer
  • the conductive film 724B functions as the second gate electrode.
  • the conductive film 712B of the first transistor 780 is electrically connected to the first wiring G (i). Note that the first wiring G (i) is formed in the same step as the conductive film 704. The first wiring G (i) functions as a gate line.
  • the second transistor 880 includes a conductive film 804 over the insulating film 728, an insulating film 806 over the conductive film 804, a semiconductor film 818 over the insulating film 806, a conductive film 812A and a conductive film 812B over the semiconductor film 818, , An insulating film 821A over the conductive film 812A and the conductive film 812B, and a conductive film 824B over the insulating film 821A.
  • the conductive film 804 functions as a first gate electrode
  • the insulating film 806 functions as a first gate insulating layer
  • the semiconductor film 818 functions as a semiconductor layer capable of forming a channel
  • the conductive film 812A functions as a source.
  • the conductive film 812B functions as the other of the source electrode and the drain electrode
  • the insulating film 821A functions as the second gate insulating layer
  • the conductive film 824B functions as the second gate electrode.
  • the conductive film 812B of the second transistor 880 is electrically connected to the first conductive film C1 (g). Note that in FIG. 2B, the first conductive film C1 (g) is in direct contact with the conductive film 812B; however, the first conductive film C1 (g) may be electrically connected through another conductor. .
  • the first transistor 780 and the second transistor 880 are completely overlapped with each other; however, such a structure is not necessarily required, and for example, the first transistor 780 is used. As long as part of the second transistor 880 overlaps.
  • the gate driver 301 may include a third transistor 790 connected in series with the first transistor 780.
  • the common driver 303 may include a fourth transistor 890 connected in series with the second transistor 880.
  • the first transistor 780, the second transistor 880, the third transistor 790, and the fourth transistor 890 are not limited to the structure illustrated in FIG.
  • a structure of the first to fourth transistors a structure of a transistor 100 described later or a structure of the transistor MD1 can be applied.
  • the gate driver 301 and the common driver 303 can be stacking and forming the gate driver 301 and the common driver 303, the area occupied by the driver circuit in the display device 700 can be reduced, and a narrowed frame can be achieved.
  • FIG. 3 illustrates a structure of the display device 700 of one embodiment of the present invention.
  • 3A is a block diagram illustrating a structure of a display device 700 of one embodiment of the present invention
  • FIG. 3B is a detection element C (g, h) and a detection element C illustrated in FIG. It is a schematic diagram explaining arrangement
  • FIG. 4 is a diagram illustrating a structure of the detection element C (g, h) of the display device 700 of one embodiment of the present invention illustrated in FIG. 4A is a top view of the detection element C (g, h) of one embodiment of the present invention, and FIG. 4B is a detection element C (g) along the cutting line W1-W2 illustrated in FIG. , H) and the pixel 702 (i, j).
  • FIG. 5 illustrates a structure of the detection element C (g, h) of the display device 700 of one embodiment of the present invention.
  • 5A is a top view of the second conductive film C2 (h) of the sensing element C (g, h)
  • FIG. 5B is a first conductive film of the sensing element C (g, h).
  • FIG. 5C is a top view of C1 (g)
  • FIG. 5C is a top view of the third conductive film 751 of the display device 700 of one embodiment of the present invention.
  • FIG. 6 illustrates a structure of the display device 700 of one embodiment of the present invention.
  • 6A is a top view of part of the display device 700 of one embodiment of the present invention
  • FIG. 6B is a part of the pixel 702 (i, j) of the display device 700 of one embodiment of the present invention.
  • FIG. 6A is a top view of part of the display device 700 of one embodiment of the present invention
  • FIG. 6B is a part of the pixel 702 (i, j) of the display device 700 of one embodiment of the present invention.
  • FIG. 7 illustrates a structure of the display device 700 of one embodiment of the present invention.
  • FIG. 7A is a cross-sectional view of the display device 700 of one embodiment of the present invention taken along cutting lines X1-X2, X3-X4, and X5-X6 illustrated in FIG. 7B is a cross-sectional view illustrating details of the transistor MD1 illustrated in FIG. 7A
  • FIG. 7C is a cross-sectional view illustrating details of the transistor MA illustrated in FIG. is there.
  • FIG. 7D is a cross-sectional view illustrating a modified example of part of the structure illustrated in FIG.
  • g and i used to represent the position of a sensing element, a conductive film, a pixel, and the like represent an integer of 1 to p
  • h and j represent an integer of 1 to q.
  • the pixel 702 (i, j) indicates a pixel located in i rows and j columns among the pixels 702 arranged in a matrix of 1 to p in the row direction and 1 to q in the column direction.
  • a display device 700 described in this embodiment includes a substrate 710, a pixel 702 (i, j), a display element 750, and a detection element C (g, h) (see FIG. 7).
  • the substrate 710 has a light-transmitting property
  • the display element 750 has a region overlapping with the substrate 710
  • the detection element C (g, h) is disposed between the display element 750 and the substrate 710.
  • the pixel 702 (i, j) includes a display element 750.
  • the display element 750 has a function of performing display on the side where the substrate 710 is provided.
  • a backlight can be provided on the substrate 770 side so that light BL directed from the substrate 770 toward the substrate 710 can be emitted for display (see FIG. 4B).
  • the detection element C (g, h) has a function of detecting an element that is close to or in contact with the side on which the substrate 710 is present (see FIG. 4B).
  • the sensing element C (g, h) includes a first conductive film C1 (g), a second conductive film C2 (h) between the first conductive film C1 (g) and the substrate 710, and the first conductive film C1 (g).
  • An insulating film 721B is provided between the conductive film C1 (g) and the second conductive film C2 (h).
  • the display element 750 of the display device 700 has an electric field for controlling the orientation of the liquid crystal material included in the layer 753 including the liquid crystal material and the layer 753 including the liquid crystal material between the first conductive film C1 (g).
  • a third conductive film 751 disposed so as to be applied to the first and second electrodes.
  • a display device 700 described in this embodiment includes a sensing element C (g, h) including a first conductive film C1 (g) and a second conductive film C2 (h), a layer 753 containing a liquid crystal material, A third conductive film 751 is provided so that an electric field for controlling the orientation of the liquid crystal material included in the layer 753 containing the liquid crystal material can be applied to the first conductive film C1 (g). And a display element 750.
  • the electrically conductive film with which a detection element is provided can be used for a display element.
  • a novel display device that is highly convenient or reliable can be provided.
  • the display device 700 includes a transistor MA that is electrically connected to the display element 750.
  • the third conductive film 751 is electrically connected to the source electrode or the drain electrode of the transistor MA.
  • the transistor MA of the display device 700 includes a semiconductor film 718.
  • the insulating film 721B includes a region sandwiched between the layer 753 containing a liquid crystal material and the semiconductor film 718 (see FIG. 7C).
  • the display device 700 is electrically connected to the gate line G (i) electrically connected to the transistor MA, the signal line S (j) electrically connected to the transistor MA, and the gate line G (i). And a plurality of transistors electrically connected to the signal line S (j) (see FIG. 4A).
  • the conductive film 704 functioning as a gate electrode of the transistor MA is electrically connected to the gate line G (i)
  • the conductive film 712B functioning as a source electrode or a drain electrode is electrically connected to the signal line S (j). Connected (see FIG. 7C).
  • the first conductive film C1 (g) or the second conductive film C2 (h) includes an opening overlapping with the gate line G (i) or the signal line S (j) (FIG. 5A or FIG. B)).
  • a display device 700 described in this embodiment includes a gate line G (i) electrically connected to the transistor MA and a signal line S (j) electrically connected to the transistor.
  • the first conductive film C1 (g) or the second conductive film C2 (h) having an opening overlapping the line S (j) or the gate line G (i) is included. Accordingly, the area of the region where the gate line or the signal line overlaps in the first conductive film or the second conductive film can be reduced, and the capacitance parasitic on the gate line or the signal line can be reduced. As a result, a novel touch panel that is highly convenient or reliable can be provided.
  • the semiconductor film 718 of the display device 700 contains indium, gallium, zinc, and oxygen.
  • the second conductive film C2 (h) of the display device 700 contains indium, gallium, zinc, and oxygen.
  • a display device 700 described in this embodiment includes a transistor MA including a semiconductor film 718 containing indium, gallium, zinc, and oxygen, and a second conductive film C2 (h) containing indium, gallium, zinc, and oxygen. And a sensing element C (g, h). Accordingly, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. In addition, a film containing indium, gallium, zinc, and oxygen formed in the same step can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel that is highly convenient or reliable can be provided.
  • the display device 700 can include a gate driver 301, a source driver 302, and a common driver 303 (see FIG. 3A).
  • the gate driver 301 is electrically connected to the gate lines G (1) to G (m) and has a function of supplying a selection signal, for example.
  • the transistor MD1 can be used for the gate driver 301 (see FIG. 7A).
  • the source driver 302 is electrically connected to the signal lines S (1) to S (n) and has a function of supplying an image signal, for example.
  • the source driver 302 is electrically connected to the second conductive films C2 (1) to C2 (q), and for example, the second conductive films C2 (1) to C2 (1) to C2 (1) to C2 (1) are changed based on a driving signal and capacitance. A function of detecting a potential of C2 (q) and supplying a detection signal is provided.
  • the common driver 303 is electrically connected to the first conductive films C1 (1) to C1 (p) and has a function of supplying a driving signal including, for example, a rectangular wave.
  • the transistor MD2 can be used for the common driver 303 (see FIG. 7A).
  • the common driver 303 and the gate driver 301 are formed to overlap each other, whereby the area of the driver circuit portion can be reduced.
  • m, n, p, and q are integers of 2 or more, g is an integer of 1 to p, and h is an integer of 1 to q. is there.
  • the display device 700 can include detection elements in a matrix of p rows and q columns.
  • the sensing element C (g, h) includes a first conductive film C1 (g) in the g-th row and a second conductive film C2 (h) in the h-th column.
  • the display device 700 can include display elements in a matrix of m rows and n columns. Note that the pixel 702 (i, j) includes a display element 750. In addition, the pixel 702 (i, j) is electrically connected to the gate line G (i) in the i-th row and electrically connected to the signal line S (j) in the j-th column.
  • the display device 700 can include one or a plurality of pixels including a region overlapping with the detection element.
  • a pixel 702 (i, j) overlapping with the detection element C (g, h) and other pixels can be included (see FIGS. 3B and 4B).
  • the display device 700 can include a plurality of gate lines provided along the first conductive film C1 (g).
  • the gate line G (i ⁇ 1) and the gate line G (i) provided along the first conductive film C1 (g) can be included (see FIG. 4A).
  • another conductive film may be electrically connected to the first conductive film C1 (g).
  • the conductive film 704S may be connected to the first conductive film C1 (g) (see FIG. 7D). Thereby, electrical resistance can be reduced.
  • the display device 700 can include a plurality of signal lines provided along the second conductive film.
  • signal lines S (j) to S (j + 9) provided along the second conductive film C2 (h) can be included (see FIG. 4A).
  • the display device 700 can include the first conductive film C1 (g) including an opening.
  • a conductive film including an opening overlapping with the gate line G (i-1) and an opening overlapping with the gate line G (i) can be used for the first conductive film C1 (g) (FIG. 5B). reference).
  • the display device 700 can include a second conductive film including an opening.
  • a conductive film including an opening overlapping with the signal line S (j) to an opening overlapping with the signal line (j + 9) can be used for the second conductive film C2 (h) (see FIG. 5A).
  • the display device 700 can use the third conductive film 751 provided so as to apply an electric field (also referred to as a transverse electric field) in a direction intersecting with the thickness direction of the layer 753 containing a liquid crystal material.
  • an electric field also referred to as a transverse electric field
  • a comb-like third conductive film 751 including a region overlapping with the first conductive film C1 (g) can be used (see FIGS. 4B and 5C).
  • the third conductive film 751 provided so as to apply an electric field (also referred to as a vertical electric field) in the thickness direction of the layer 753 containing a liquid crystal material can be used.
  • the first conductive film C1 (g) is a part of the sensing element C (g, h) and a part of the display element 750.
  • the display device 700 can include a substrate 770 including a region overlapping with the substrate 710 and a sealing material 730 having a function of bonding the substrate 710 and the substrate 770 together. Accordingly, for example, the display element 750 can be disposed in a region surrounded by the substrate 710, the substrate 770, and the sealing material 730.
  • the display device 700 can include the structure KB between the substrate 710 and the substrate 770. Accordingly, a predetermined interval can be provided between the substrate 710 and the substrate 770.
  • the display device 700 can include a colored film CF including a region overlapping with the display element 750.
  • the light-shielding film BM including an opening in a region overlapping with the display element 750 can be provided.
  • the display device 700 can include the insulating film 771 between the colored film CF and the layer 753 containing a liquid crystal material. Further, the insulating film 771 can be provided between the light-blocking film BM and the layer 753 containing a liquid crystal material. Accordingly, unevenness caused by the thickness of the colored film CF can be flattened, or diffusion of impurities from the colored film CF or the light shielding film BM to the layer 753 containing a liquid crystal material can be suppressed.
  • the display device 700 can include the alignment film AF1 between the layer 753 containing a liquid crystal material and the substrate 710. Further, the alignment film AF2 can be provided between the layer 753 containing a liquid crystal material and the substrate 770.
  • the display device 700 can include the optical film 710P or the optical film 770P.
  • the optical film 710P can be provided so as to sandwich the substrate 710 between the layer 753 containing a liquid crystal material.
  • the optical film 770P can be provided so as to sandwich the substrate 770 with the layer 753 containing a liquid crystal material.
  • a polarizing plate can be used for the optical film 710P and the optical film 770P.
  • a polarizing plate can be used so that the other polarization direction is a predetermined direction with respect to one polarization direction.
  • two linearly polarizing plates can be arranged and used in a crossed Nicols relationship.
  • the display device 700 can include the conductive film 724 including a region overlapping with the semiconductor film 718 of the transistor MD1.
  • a material that can be formed in the same step as the first conductive film C1 (g) can be used for the conductive film 724 (see FIG. 7B).
  • the display device 700 can include the insulating film 701 between the transistor MA and the substrate 710.
  • the insulating film 721B or the insulating film 728 can be provided between the layer 753 containing a liquid crystal material and the semiconductor film 718.
  • the insulating film 721A can be provided between the insulating film 721B and the semiconductor film 718.
  • the insulating film 701 has a function of suppressing diffusion of impurities from the substrate 710 to the transistor MA, and the insulating film 721B or the insulating film 721A has a function of suppressing diffusion of impurities to the semiconductor film 718.
  • the insulating film 728 has a function of planarizing a step due to the structure of the transistor MA or the like overlapping with the insulating film 728.
  • the display device 700 can include the insulating film 706 between the conductive film 704 and the semiconductor film 718.
  • the insulating film 706 functions as a gate insulating film.
  • the display device 700 can include a wiring 711 that is electrically connected to the display element 750 or the detection element C (g, h).
  • the display device 700 can include a terminal 719 that is electrically connected to the wiring 711.
  • the flexible printed circuit board FPC1 can be electrically connected to the terminal 719 using the conductive member ACF1.
  • the display device 700 includes a substrate 710, a display element 750, or a detection element C (g, h).
  • the display device 700 includes a first conductive film C1 (g), a second conductive film C2 (h), an insulating film 721B, a layer 753 containing a liquid crystal material, or a third conductive film 751.
  • the display device 700 includes a transistor MA, a semiconductor film 718, a gate line G (i), or a signal line S (j).
  • the display device 700 can include a common driver, a gate driver, and a source driver.
  • Substrate 710 Only needs to be manufactured using a heat-resistant material that can withstand heat treatment in the manufacturing process.
  • a glass substrate can be used.
  • alkali-free glass, soda-lime glass, potash glass, crystal glass, quartz, sapphire, or the like can be used for the substrate 710.
  • a metal substrate such as SUS or aluminum
  • a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the substrate 710.
  • a resin film or a resin plate using polyester, polyolefin, polyamide, polyimide, polycarbonate, acrylic, or the like may be used for the substrate 710.
  • Substrate 770 can be formed using a material that can be used for the substrate 710.
  • Conductive Film 704, Conductive Film 712A, Conductive Film 712B, Wiring 711, Terminal 719 A conductive material can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.
  • an inorganic conductive material an organic conductive material, a metal, conductive ceramics, or the like can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.
  • a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese is used as the conductive film 704 and the conductive film 712A.
  • the conductive film 712B, the wiring 711, or the terminal 719 can be used.
  • the above-described alloy containing a metal element or the like can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.
  • an alloy of copper and manganese is suitable for fine processing using a wet etching method.
  • a two-layer structure in which a titanium film is laminated on an aluminum film a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or a tungsten nitride film
  • a two-layer structure in which a tungsten film is stacked thereon, a titanium film, and a three-layer structure in which an aluminum film is stacked over the titanium film and a titanium film is further formed thereon are formed as a conductive film 704, a conductive film 712A, a conductive film 712B, the wiring 711, or the terminal 719 can be used.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium-added zinc oxide, a film containing graphene or graphite, or the like can be used as the conductive film 704, the conductive film 712A, and the conductive film 712B.
  • the wiring 711 or the terminal 719 can be used.
  • Gate line G (i), signal line S (j) >> A material having conductivity can be used for the gate line G (i) or the signal line S (j).
  • a material that can be used for the wiring 711 can be used for the gate line G (i) or the signal line S (j).
  • the detection element C (g, h) has a function of detecting a capacitance, illuminance, magnetic force, radio wave, pressure or the like and supplying a signal based on the detected physical quantity.
  • a capacitive element a photoelectric conversion element, a magnetic sensing element, a piezoelectric element, or a resonator can be used as the sensing element C (g, h).
  • a sensing element having a function of supplying a signal that changes based on a change in capacitance can be used as the sensing element C (g, h).
  • a mutual capacitance method or a self-capacitance method can be used.
  • a capacitor element including the first conductive film C1 (g) and the second conductive film C2 (h) can be used as the detection element C (g, h).
  • a driving signal is supplied to the first conductive film C1 (g), and the potential of the second conductive film C2 (h) that changes based on the driving signal and the capacitance is detected. It can be used as a detection signal.
  • First conductive film C1 (g) A material having conductivity can be used for the first conductive film C1 (g).
  • a material that can be used for the wiring 711 can be used for the first conductive film C1 (g).
  • a conductive and light-transmitting material can be used for the first conductive film C1 (g).
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used.
  • a uniform electric field can be supplied without blocking the display of the display element 750.
  • Second conductive film C2 (h) A material having conductivity can be used for the second conductive film C2 (h).
  • a material having conductivity and translucency can be used for the second conductive film C2 (h).
  • a conductive oxide or an oxide semiconductor can be used.
  • a material containing indium, gallium, zinc, and oxygen can be used.
  • the second conductive film C2 (h) an oxide semiconductor formed in the same step as the semiconductor film 718 whose conductivity is increased using a method for controlling the resistivity of an oxide semiconductor is used as the second conductive film C2 (h).
  • the second conductive film C2 (h) can be manufactured using a simple process.
  • Insulating Film 701, Insulating Film 706, Insulating Film 721A, Insulating Film 721B, Insulating Film 728, Insulating Film 771 For example, an insulating inorganic material, an insulating organic material, or an insulating composite material including an inorganic material and an organic material is used as the insulating film 701, the insulating film 706, the insulating film 721A, the insulating film 721B, the insulating film 728, or the insulating film. 771.
  • an insulating film 701, an insulating film 706, an insulating film 721A, an insulating film 721B, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a stacked material in which a plurality of these materials are stacked is used.
  • the insulating film 728 or the insulating film 771 can be used.
  • a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked material in which a plurality selected from these films is stacked can be used.
  • polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or the like, or a laminated material or a composite material of a plurality of resins selected from these are used as the insulating film 721A, the insulating film 721B, the insulating film 728,
  • the insulating film 771 can be used.
  • a material having photosensitivity may be used.
  • polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771.
  • Display element 750 For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750.
  • a structure in which a liquid crystal element and a polarizing plate are combined or a shutter-type MEMS display element or the like can be used.
  • IPS In-Plane-Switching
  • TN Transmission Nematic
  • FFS Fe Field Switching
  • ASM Analy Symmetricalized Micro-cell
  • OCB Oxially Symmetricalized Micro-cell
  • a liquid crystal element that can be driven using a driving method such as a (Ferroelectric Liquid Crystal) mode or an AFLC (Antiferroelectric Liquid Crystal) mode can be used.
  • a liquid crystal element that can be driven using a driving method such as a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV mode, or the like.
  • VA vertical alignment
  • MVA Multi-Domain Vertical Alignment
  • PVA Plasma Vertical Alignment
  • ASV ASV mode
  • the display element 750 can be used.
  • the layer 753 containing a liquid crystal material and the first conductive film C1 (g) and the third conductive film 751 arranged so that an electric field for controlling the orientation of the liquid crystal material can be applied can be used for the display element 750.
  • thermotropic liquid crystal a low molecular liquid crystal
  • a polymer liquid crystal a polymer dispersed liquid crystal
  • a ferroelectric liquid crystal an antiferroelectric liquid crystal, or the like
  • liquid crystal materials liquid crystal materials exhibiting a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used depending on conditions.
  • a liquid crystal material exhibiting a blue phase can be used for the layer 753 containing a liquid crystal material.
  • Third conductive film 751 A material having conductivity can be used for the third conductive film 751.
  • a material that can be used for the wiring 711 can be used for the third conductive film 751.
  • a light-transmitting material can be used for the third conductive film 751.
  • a comb-like shape can be used for the third conductive film 751.
  • Transistor MA For example, a bottom-gate or top-gate transistor can be used as the transistor MA.
  • a transistor with a small leakage current in an off state can be used for the transistor MA as compared with a transistor using amorphous silicon as a semiconductor film.
  • a transistor in which an oxide semiconductor is used for the semiconductor film 718 can be used for the transistor MA.
  • the time during which the pixel circuit can hold an image signal can be lengthened.
  • the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute while suppressing the occurrence of flicker.
  • fatigue accumulated in the user of the information processing apparatus can be reduced.
  • power consumption associated with driving can be reduced.
  • the transistor MA includes a semiconductor film 718 and a conductive film 704 including a region overlapping with the semiconductor film 718 (see FIG. 7C).
  • the transistor MA includes a conductive film 712A and a conductive film 712B.
  • the conductive film 704 has a function of a gate electrode
  • the insulating film 706 has a function of a gate insulating film.
  • the conductive film 712A has one of a source electrode function and a drain electrode function
  • the conductive film 712B has the other of the source electrode function and the drain electrode function.
  • an oxide semiconductor can be used for the semiconductor film 718.
  • an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.
  • Gate driver 301 Various sequential circuits such as a shift register can be used for the gate driver 301.
  • a transistor MD1, a capacitor, or the like can be used for the gate driver 301.
  • a transistor including the conductive film 724 including a region overlapping with the conductive film 704 including the function of the first gate electrode can be used for the transistor MD1.
  • the transistor MD1 includes a stacked film in which the insulating film 721A and the insulating film 721B are stacked between the conductive film 724 and the semiconductor film 718.
  • the conductive film 724 may be electrically connected to a wiring that supplies the same potential as the potential supplied to the conductive film 704.
  • the gate driver 301 can be stacked with the common driver 303.
  • the transistor MD2 included in the common driver 303 may be formed over the transistor MD1 included in the gate driver 301.
  • Source Driver 302 For example, an integrated circuit can be used as a source driver. Specifically, an integrated circuit formed over a silicon substrate can be used.
  • a source driver can be implemented using a COG (Chip on glass) method. Specifically, it can be mounted on a pad electrically connected to the signal line S (j) using an anisotropic conductive film.
  • COG Chip on glass
  • the source driver is electrically connected to the second conductive films C2 (1) to C2 (q), and separates and amplifies signals received by the second conductive films C2 (1) to C2 (q). It has functions.
  • the common driver is electrically connected to the first conductive films C1 (1) to C1 (p) and has a function of supplying signals to the first conductive films C1 (1) to C1 (p) (FIG. 3A).
  • Sealant 730 For example, an inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the sealing material 730.
  • an organic material such as a heat-melting resin or a curable resin
  • an organic material such as a reaction curable adhesive, a photocurable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive is used as the sealing material 730.
  • a reaction curable adhesive such as a reaction curable adhesive, a photocurable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive
  • an organic material such as a heat-melting resin or a curable resin
  • an organic material such as a reaction curable adhesive, a photocurable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive
  • an adhesive including epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like. Can be used for the sealing material 730.
  • a material that transmits light of a predetermined color can be used for the colored film CF.
  • the colored film CF can be used for the color filter.
  • a material that transmits blue light, a material that transmits green light, a material that transmits red light, a material that transmits yellow light, or a material that transmits white light is used for the colored film CF. it can.
  • Light shielding film BM A material that prevents light transmission can be used for the light-shielding film BM. Thereby, for example, the light shielding film BM can be used for the black matrix.
  • Structure KB For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure KB. Thereby, a predetermined interval can be provided between the structures sandwiching the structure KB.
  • polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a composite material of a plurality of resins selected from these can be used for the structure KB.
  • a material having photosensitivity may be used.
  • the structure KB1 in the region where the gate driver 301 and the common driver 303 are stacked may be smaller than the structure KB2 in the display region. With such a structure, it is possible to achieve both the stacking of the gate driver 301 and the common driver 303 and the suppression of the increase in the thickness of the entire display device 700.
  • Alignment film AF1 Alignment film AF2
  • polyimide or the like can be used for the alignment film AF1 or the alignment film AF2.
  • an alignment film formed using a rubbing process or a photo-alignment technique so as to be aligned in a predetermined direction can be used.
  • Optical Film 710P, Optical Film 770P For example, a polarizing plate, a retardation plate, a diffusion film, an antireflection film, a condensing film, or the like can be used for the optical film 710P or the optical film 770P. Alternatively, a polarizing plate including a dichroic dye can be used for the optical film 710P.
  • an antistatic film that suppresses adhesion of dust a water-repellent film that makes it difficult to adhere dirt, a hard coat film that suppresses the generation of scratches associated with use, and the like can be used for the optical film 710P.
  • a film including an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2 (h) (see FIG. 7A).
  • a method for controlling the concentration of impurities such as hydrogen and water and / or oxygen vacancies in the oxide semiconductor film can be used as a method for controlling the resistivity of the oxide semiconductor.
  • the plasma treatment can be used for a method of increasing or reducing the concentration of impurities such as hydrogen and water and / or oxygen vacancies in the film.
  • plasma treatment performed using a gas including one or more selected from rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus, and nitrogen can be applied.
  • a gas including one or more selected from rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus, and nitrogen can be applied.
  • Plasma treatment or the like can be applied. Accordingly, an oxide semiconductor film with high carrier density and low resistivity can be obtained.
  • an oxide semiconductor film with low resistivity can be formed by implanting hydrogen, boron, phosphorus, or nitrogen into an oxide semiconductor film by an ion implantation method, an ion doping method, a plasma immersion ion implantation method, or the like. it can.
  • a method in which an insulating film containing hydrogen is formed in contact with the oxide semiconductor film and hydrogen is diffused from the insulating film to the oxide semiconductor film can be used. Accordingly, the carrier density of the oxide semiconductor film can be increased and the resistivity can be decreased.
  • a silicon nitride film can be used for an insulating film formed in contact with an oxide semiconductor film.
  • Hydrogen contained in the oxide semiconductor film reacts with oxygen bonded to metal atoms to become water, and forms oxygen vacancies in a lattice from which oxygen is released (or a portion from which oxygen is released). When hydrogen enters the oxygen vacancies, electrons serving as carriers may be generated. In some cases, a part of hydrogen is bonded to oxygen bonded to a metal atom, so that an electron serving as a carrier is generated. Accordingly, an oxide semiconductor film with high carrier density and low resistivity can be obtained.
  • FIG. 12A is a top view of the transistor 100
  • FIG. 12C corresponds to a cross-sectional view of a cross section taken along the section line X1-X2 illustrated in FIG. 12A.
  • FIG. 12C corresponds to a cross-sectional view of a cut surface between cut lines Y1-Y2 shown in FIG.
  • some components such as an insulating film functioning as a gate insulating film
  • the cutting line X1-X2 direction may be referred to as a channel length direction
  • the cutting line Y1-Y2 direction may be referred to as a channel width direction.
  • some components may be omitted in the following drawings as in FIG. 12A.
  • transistor 100 can be used for the display device described in Embodiment 1.
  • the substrate 102 is a stacked material of the substrate 710 and the insulating film 701
  • the conductive film 104 is the conductive film 704
  • the stacked film of the insulating film 106 and the insulating film 107 is 706, and the oxide is oxidized.
  • the semiconductor film 108 is the semiconductor film 718
  • the conductive film 112a is the conductive film 712A
  • the conductive film 112b is the conductive film 712B
  • the stacked film of the insulating film 114 and the insulating film 116 is the insulating film 721A
  • the insulating film 118 is the insulating film. It can be read as 721B.
  • the transistor 100 includes a conductive film 104 functioning as a gate electrode over a substrate 102, an insulating film 106 over the substrate 102 and the conductive film 104, an insulating film 107 over the insulating film 106, and an oxide semiconductor film over the insulating film 107.
  • a conductive film 112a functioning as a source electrode electrically connected to the oxide semiconductor film 108
  • a conductive film 112b functioning as a drain electrode electrically connected to the oxide semiconductor film 108.
  • insulating films 114 and 116 and an insulating film 118 are provided over the transistor 100, more specifically, over the conductive films 112 a and 112 b and the oxide semiconductor film 108.
  • the insulating films 114, 116, and 118 function as protective insulating films for the transistor 100.
  • the oxide semiconductor film 108 includes a first oxide semiconductor film 108a on the conductive film 104 side that functions as a gate electrode and a second oxide semiconductor film 108b over the first oxide semiconductor film 108a. Have.
  • the insulating film 106 and the insulating film 107 have a function as a gate insulating film of the transistor 100.
  • an In-M (M represents Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) oxide or an In-M-Zn oxide is used. it can.
  • an In-M-Zn oxide is preferably used for the oxide semiconductor film 108.
  • the first oxide semiconductor film 108a includes a first region in which the atomic ratio of In is larger than the atomic ratio of M.
  • the second oxide semiconductor film 108b includes a second region in which the atomic ratio of In is smaller than that of the first oxide semiconductor film 108a.
  • the second region has a thinner part than the first region.
  • the field-effect mobility of the transistor 100 (sometimes simply referred to as mobility or ⁇ FE). Can be high. Specifically, the field effect mobility of the transistor 100 can exceed 10 cm 2 / Vs.
  • the above-described transistor having a high field-effect mobility is used for a gate driver that generates a gate signal (particularly, a demultiplexer connected to an output terminal of a shift register included in the gate driver).
  • a semiconductor device or a display device (also referred to as a frame) can be provided.
  • the electrical characteristics of the transistor 100 easily change during light irradiation.
  • the second oxide semiconductor film 108b is formed over the first oxide semiconductor film 108a.
  • the thickness of the channel formation region of the second oxide semiconductor film 108b is smaller than the thickness of the first oxide semiconductor film 108a.
  • the second oxide semiconductor film 108b includes the second region in which the atomic ratio of In is smaller than that of the first oxide semiconductor film 108a, Eg is larger than that of the first oxide semiconductor film 108a. Become. Therefore, the oxide semiconductor film 108 having a stacked structure of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b has high resistance due to the optical negative bias stress test.
  • the oxide semiconductor film having the above structure With the oxide semiconductor film having the above structure, the amount of light absorbed by the oxide semiconductor film 108 during light irradiation can be reduced. Accordingly, variation in electrical characteristics of the transistor 100 during light irradiation can be suppressed.
  • the insulating film 114 or the insulating film 116 contains excess oxygen; thus, variation in electrical characteristics of the transistor 100 due to light irradiation can be further suppressed. .
  • oxide semiconductor film 108 is described in detail with reference to FIG.
  • FIG. 12B is a cross-sectional view in which the vicinity of the oxide semiconductor film 108 is enlarged in the cross section of the transistor 100 illustrated in FIG.
  • the thickness of the first oxide semiconductor film 108a is denoted by t1
  • the thickness of the second oxide semiconductor film 108b is denoted by t2-1 and t2-2. Since the second oxide semiconductor film 108b is provided over the first oxide semiconductor film 108a, the first oxide semiconductor film 108a is etched or etched when the conductive films 112a and 112b are formed. There is no exposure to solutions. Therefore, the first oxide semiconductor film 108a is not reduced or very little. On the other hand, in the second oxide semiconductor film 108b, when the conductive films 112a and 112b are formed, portions of the second oxide semiconductor film 108b that do not overlap with the conductive films 112a and 112b are etched to form recesses.
  • the thickness of the region overlapping the conductive films 112a and 112b of the second oxide semiconductor film 108b is t2-1, and the thickness of the region not overlapping the conductive films 112a and 112b of the second oxide semiconductor film 108b is t2. t2-2.
  • the relation between the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is preferably t2-1> t1> t2-2. With such a film thickness relationship, a transistor having high field effect mobility and a small amount of fluctuation in threshold voltage during light irradiation can be obtained.
  • the oxide semiconductor film 108 included in the transistor 100 when oxygen vacancies are formed, electrons serving as carriers are generated, which tends to be normally on. Therefore, reducing oxygen vacancies in the oxide semiconductor film 108, particularly oxygen vacancies in the first oxide semiconductor film 108a is important in obtaining stable transistor characteristics. Therefore, in the structure of the transistor of one embodiment of the present invention, excess oxygen is introduced into the insulating film over the oxide semiconductor film 108, here, the insulating film 114 and / or the insulating film 116 over the oxide semiconductor film 108. Thus, oxygen is transferred from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108, so that oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a, are filled.
  • the insulating films 114 and 116 preferably have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region).
  • the insulating films 114 and 116 are insulating films capable of releasing oxygen.
  • oxygen is introduced into the insulating films 114 and 116 after film formation to form the oxygen-excess region.
  • a method for introducing oxygen an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used.
  • the thickness of the second oxide semiconductor film 108b near the channel formation region is preferably 1 nm to 20 nm, and more preferably 3 nm to 10 nm.
  • substrate There is no particular limitation on the material of the substrate 102, but it is necessary that the substrate 102 have at least heat resistance to withstand heat treatment performed later.
  • a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like may be used as the substrate 102.
  • a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be applied, and a semiconductor element is provided over these substrates.
  • a substrate may be used as the substrate 102.
  • Conductive film functioning as gate electrode, source electrode, and drain electrode As the conductive film 104 functioning as a gate electrode, the conductive film 112a functioning as a source electrode, and the conductive film 112b functioning as a drain electrode, chromium (Cr), copper (Cu), aluminum (Al), gold (Au) , Silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), cobalt (Co) Each of these can be formed using a metal element selected from the above, an alloy containing the above-described metal element as a component, an alloy combining the above-described metal elements, or the like.
  • the conductive films 104, 112a, and 112b may have a single-layer structure or a stacked structure including two or more layers.
  • the conductive films 104, 112a, and 112b include indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, and indium tin oxide containing titanium oxide.
  • a light-transmitting conductive material such as indium zinc oxide or indium tin oxide to which silicon oxide is added can be used.
  • a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be applied to the conductive films 104, 112a, and 112b.
  • X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti
  • a Cu-X alloy film it can be processed by a wet etching process, and thus manufacturing costs can be suppressed.
  • insulating films 106 and 107 functioning as the gate insulating film of the transistor 100 As the insulating films 106 and 107 functioning as the gate insulating film of the transistor 100, a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, or the like is used to form a silicon oxide film, a silicon oxynitride film, or a nitride film.
  • PECVD plasma enhanced chemical vapor deposition
  • sputtering method or the like is used to form a silicon oxide film, a silicon oxynitride film, or a nitride film.
  • One or more kinds of silicon oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film and neodymium oxide film Each insulating film can be used. Note that instead of the stacked
  • the insulating film 106 functions as a blocking film that suppresses permeation of oxygen.
  • the insulating film 106 can suppress permeation of oxygen.
  • the insulating film 107 in contact with the oxide semiconductor film 108 functioning as a channel formation region of the transistor 100 is preferably an oxide insulating film, and contains a region containing oxygen in excess of the stoichiometric composition (oxygen excess) It is more preferable to have (region).
  • the insulating film 107 is an insulating film capable of releasing oxygen.
  • the insulating film 107 may be formed in an oxygen atmosphere.
  • oxygen may be introduced into the insulating film 107 after film formation to form an oxygen excess region.
  • an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used.
  • a silicon nitride film is formed as the insulating film 106 and a silicon oxide film is formed as the insulating film 107.
  • a silicon nitride film has a higher relative dielectric constant than a silicon oxide film and a large film thickness necessary for obtaining a capacitance equivalent to that of a silicon oxide film. Therefore, a silicon nitride film is used as a gate insulating film of the transistor 150. Insulating film can be physically thickened. Accordingly, a decrease in the withstand voltage of the transistor 100 can be suppressed, and further, the withstand voltage can be improved, so that electrostatic breakdown of the transistor 100 can be suppressed.
  • oxide semiconductor film 108 any of the above materials can be used.
  • the oxide semiconductor film 108 is an In-M-Zn oxide
  • the atomic ratio of metal elements of a sputtering target used for forming the In-M-Zn oxide satisfies In ⁇ M and Zn ⁇ M. It is preferable.
  • the oxide semiconductor film 108 is an In-M-Zn oxide
  • a target including a polycrystalline In-M-Zn oxide is preferably used as the sputtering target.
  • the oxide semiconductor film 108 having crystallinity can be easily formed.
  • the atomic ratio of the oxide semiconductor film 108 to be formed includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target as an error.
  • the oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. In this manner, off-state current of the transistor 100 can be reduced by using an oxide semiconductor with a wide energy gap.
  • an oxide semiconductor film with an energy gap of 2 eV or more, preferably 2 eV or more and 3.0 eV or less is used for the first oxide semiconductor film 108a, and an energy gap of 2 e is used for the second oxide semiconductor film 108b. It is preferable to use an oxide semiconductor film with a thickness of 0.5 eV to 3.5 eV.
  • the energy gap of the second oxide semiconductor film 108b is preferably larger than that of the first oxide semiconductor film 108a.
  • each of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is 3 nm to 200 nm, preferably 3 nm to 100 nm, more preferably 3 nm to 50 nm. Note that it is preferable that the film thickness relationship described above is satisfied.
  • the second oxide semiconductor film 108b an oxide semiconductor film with low carrier density is used.
  • the second oxide semiconductor film 108b has a carrier density of 1 ⁇ 10 17 / cm 3 or less, preferably 1 ⁇ 10 15 / cm 3 or less, more preferably 1 ⁇ 10 13 / cm 3 or less, more preferably 1 ⁇ 10 11 / cm 3 or less.
  • Hydrogen contained in the oxide semiconductor film reacts with oxygen bonded to metal atoms to become water, and forms oxygen vacancies in a lattice from which oxygen is released (or a portion from which oxygen is released). When hydrogen enters the oxygen vacancies, electrons serving as carriers may be generated. In addition, a part of hydrogen may be combined with oxygen bonded to a metal atom to generate electrons as carriers. Therefore, a transistor including an oxide semiconductor film containing hydrogen is likely to be normally on. Therefore, it is preferable that hydrogen be reduced in the oxide semiconductor film 108 as much as possible.
  • the hydrogen concentration obtained by SIMS analysis is 2 ⁇ 10 20 atoms / cm 3 or less, preferably 5 ⁇ 10 19 atoms / cm 3 or less, more preferably 1 ⁇ 10 19. atoms / cm 3 or less, 5 ⁇ 10 18 atoms / cm 3 or less, preferably 1 ⁇ 10 18 atoms / cm 3 or less, more preferably 5 ⁇ 10 17 atoms / cm 3 or less, more preferably 1 ⁇ 10 16 atoms / cm 3 or less. cm 3 or less.
  • the first oxide semiconductor film 108a preferably includes a portion with a lower hydrogen concentration than the second oxide semiconductor film 108b. Since the first oxide semiconductor film 108a has a portion with a lower hydrogen concentration than the second oxide semiconductor film 108b, a highly reliable semiconductor device can be obtained.
  • the concentration of silicon or carbon in the first oxide semiconductor film 108a and the concentration of silicon or carbon in the vicinity of the interface with the first oxide semiconductor film 108a are 2 ⁇ 10. 18 atoms / cm 3 or less, preferably 2 ⁇ 10 17 atoms / cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal obtained by SIMS analysis is 1 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 16 atoms / cm 3 or less. To do. When an alkali metal and an alkaline earth metal are combined with an oxide semiconductor, carriers may be generated, and the off-state current of the transistor may be increased. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the first oxide semiconductor film 108a.
  • the nitrogen in the oxide semiconductor film is preferably reduced as much as possible.
  • the nitrogen concentration obtained by SIMS analysis is preferably 5 ⁇ 10 18 atoms / cm 3 or less.
  • the insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108.
  • the insulating film 118 has a function as a protective insulating film of the transistor 100.
  • the insulating films 114 and 116 include oxygen.
  • the insulating film 114 is an insulating film that can transmit oxygen. Note that the insulating film 114 also functions as a damage reducing film for the oxide semiconductor film 108 when an insulating film 116 to be formed later is formed.
  • silicon oxide, silicon oxynitride, or the like with a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm can be used.
  • the insulating film 114 preferably has a small amount of defects.
  • the insulating film 114 can be formed using an oxide insulating film having a low level density due to nitrogen oxides. Note that the level density attributed to the nitrogen oxide is formed between the energy at the upper end of the valence band (E v — os ) of the oxide semiconductor film and the energy at the lower end of the conduction band of the oxide semiconductor film (E c — os ). There are cases where you can get.
  • As the oxide insulating film a silicon oxynitride film with a low emission amount of nitrogen oxide, an aluminum oxynitride film with a low emission amount of nitrogen oxide, or the like can be used.
  • a silicon oxynitride film with a small amount of released nitrogen oxide is a film in which the amount of released ammonia is larger than the amount of released nitrogen oxide in the temperature programmed desorption gas analysis method.
  • the amount of released ammonia is Is 1 ⁇ 10 18 pieces / cm 3 or more and 5 ⁇ 10 19 pieces / cm 3 or less.
  • the amount of ammonia released is the amount released by heat treatment at a film surface temperature of 50 ° C. to 650 ° C., preferably 50 ° C. to 550 ° C.
  • the insulating film 116 is formed using an oxide insulating film containing more oxygen than that in the stoichiometric composition. Part of oxygen is released by heating from the oxide insulating film containing oxygen in excess of that in the stoichiometric composition.
  • An oxide insulating film containing more oxygen than that in the stoichiometric composition has an oxygen desorption amount of 1.0 ⁇ in terms of oxygen atom by temperature-programmed desorption gas analysis (TDS).
  • TDS temperature-programmed desorption gas analysis
  • the oxide insulating film has a density of 10 19 atoms / cm 3 or more, preferably 3.0 ⁇ 10 20 atoms / cm 3 or more.
  • the surface temperature of the film in the TDS is preferably in the range of 100 ° C. to 700 ° C., or 100 ° C. to 500 ° C.
  • silicon oxide, silicon oxynitride, or the like with a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm can be used.
  • the insulating films 114 and 116 can be formed using the same kind of insulating film, the interface between the insulating film 114 and the insulating film 116 may not be clearly confirmed. Therefore, in this embodiment mode, the interface between the insulating film 114 and the insulating film 116 is indicated by a broken line. Note that although a two-layer structure of the insulating film 114 and the insulating film 116 has been described in this embodiment mode, the present invention is not limited thereto, and for example, a single-layer structure of the insulating film 114 may be employed.
  • the insulating film 118 includes nitrogen.
  • the insulating film 118 includes nitrogen and silicon.
  • the insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like. By providing the insulating film 118, diffusion of oxygen from the oxide semiconductor film 108 to the outside, diffusion of oxygen contained in the insulating films 114 and 116, hydrogen from the outside to the oxide semiconductor film 108, Ingress of water and the like can be prevented.
  • a nitride insulating film can be used as the insulating film 118. Examples of the nitride insulating film include silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.
  • an oxide insulating film having a blocking effect of oxygen, hydrogen, water, or the like may be provided instead of the nitride insulating film having a blocking effect of oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like.
  • the oxide insulating film having a blocking effect of oxygen, hydrogen, water, and the like include aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.
  • various films such as the conductive film, the insulating film, and the oxide semiconductor film described above can be formed by a sputtering method or a PECVD method, but other methods such as a thermal CVD (Chemical Vapor Deposition) method can be used. May be formed.
  • a thermal CVD method a MOCVD (Metal Organic Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method may be used.
  • film formation may be performed by sending a source gas and an oxidant into the chamber at the same time, making the inside of the chamber under atmospheric pressure or reduced pressure, reacting in the vicinity of the substrate or on the substrate and depositing on the substrate. .
  • film formation may be performed by setting the inside of the chamber to atmospheric pressure or reduced pressure, sequentially introducing source gases for reaction into the chamber, and repeating the order of introducing the gases.
  • each switching valve also referred to as a high-speed valve
  • An active gas such as argon or nitrogen
  • a second source gas is introduced.
  • the inert gas becomes a carrier gas, and the inert gas may be introduced at the same time when the second raw material gas is introduced.
  • the second raw material gas may be introduced after the first raw material gas is exhausted by evacuation.
  • the first source gas is adsorbed on the surface of the substrate to form a first layer, reacts with a second source gas introduced later, and the second layer is stacked on the first layer.
  • a thin film is formed.
  • the thermal CVD method such as the MOCVD method or the ALD method can form various films such as the conductive film, the insulating film, the oxide semiconductor film, and the metal oxide film of the above-described embodiment, for example, an In—Ga—ZnO film.
  • Is used trimethylindium, trimethylgallium, and dimethylzinc are used.
  • the chemical formula of trimethylindium is In (CH 3 ) 3 .
  • the chemical formula of trimethylgallium is Ga (CH 3 ) 3 .
  • the chemical formula of dimethylzinc is Zn (CH 3 ) 2 .
  • Triethylgallium (chemical formula Ga (C 2 H 5 ) 3 ) can be used instead of trimethylgallium, and diethylzinc (chemical formula Zn (C 2 H 5 ) is used instead of dimethylzinc. 2 ) can also be used.
  • a source gas obtained by vaporizing a liquid such as trimethylaluminum (TMA)
  • TMA trimethylaluminum
  • H 2 a solvent and an aluminum precursor compound
  • gases of O Two kinds of gases of O are used.
  • trimethylaluminum is Al (CH 3 ) 3 .
  • Other material liquids include tris (dimethylamido) aluminum, triisobutylaluminum, aluminum tris (2,2,6,6-tetramethyl-3,5-heptanedionate) and the like.
  • FIG. 9A is a schematic diagram illustrating a positional relationship among the gate driver 301, the gate driver 301 (2), and the common driver 303.
  • the gate driver 301 (2) is a part of the function of the gate driver 301 separated.
  • the gate driver 301 (2) and the common driver 303 are formed on the gate driver 301, and at least a part of the gate driver 301 (2) and at least a part of the common driver 303 overlap with the gate driver 301.
  • the gate driver 301 is electrically connected to the first wirings G (1) to G (m) and the gate driver 301 (2), and the common driver 303 is connected to the first conductive films C1 (1) to C1 (p). Connect electrically.
  • the gate driver occupies a larger area than the common driver, the occupied area can be reduced by separating and stacking the functions of the entire gate driver into the gate driver 301 and the gate driver 301 (2).
  • the gate driver 301 (2) and the common driver 303 are preferably formed on the same plane.
  • FIG. 9B is a schematic cross-sectional view illustrating the positional relationship between the gate driver 301, the gate driver 301 (2), and the common driver 303.
  • the common driver 303 is formed on the gate driver 301
  • the gate driver 301 (2) is formed on the gate driver 301. .
  • the transistor 791 included in the gate driver 301 and the transistor 891 included in the gate driver 301 (2) may be electrically connected to each other using the conductive film 830.
  • FIG. 10A is a schematic diagram showing the positional relationship between the gate driver 301 and the common driver 303.
  • the gate driver 301 is formed on the common driver 303.
  • the gate driver 301 is electrically connected to the first wirings G (1) to G (m), and the common driver 303 is electrically connected to the first conductive films C1 (1) to C1 (p). .
  • FIG. 10B is a schematic cross-sectional view at a position where the common driver 303 and the first conductive films C1 (1) to C1 (p) are electrically connected.
  • FIG. 10C is a schematic cross-sectional view at a position where the gate driver 301 and the first wirings G (1) to G (m) are electrically connected.
  • the stacking order of the gate driver 301 and the common driver 303, the first wirings G (1) to G (m), and the first conductive films C1 (1) to C1 (p ) In the reverse order.
  • an opening in part of the gate driver 301 For example, as illustrated in FIG. 10B, an opening is formed in part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1 (g) is formed. 712B and the first conductive film C1 (g) can be electrically connected.
  • FIG. 10C illustrates an example of a schematic cross-sectional view at a position different from that in FIG. As illustrated in FIG. 10C, an opening is provided in part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, whereby the first conductive film 812B and the first conductive film 812B are formed.
  • Wiring G (i) can be electrically connected.
  • FIG. 11A is a schematic diagram illustrating a positional relationship among the gate driver 301, the gate driver 301 (2), and the common driver 303.
  • the gate driver 301 (2) is a part of the function of the gate driver 301 separated.
  • the gate driver 301 is formed on the gate driver 301 (2) and the common driver 303, and at least a part of the gate driver 301 (2) and at least a part of the common driver 303 overlap with the gate driver 301.
  • the gate driver 301 is electrically connected to the first wirings G (1) to G (m) and the gate driver 301 (2), and the common driver 303 is connected to the first conductive films C1 (1) to C1 (p). Connect electrically.
  • the gate driver occupies a larger area than the common driver, the occupied area can be reduced by separating and stacking the functions of the entire gate driver into the gate driver 301 and the gate driver 301 (2).
  • the gate driver 301 (2) and the common driver 303 are preferably formed on the same plane.
  • FIG. 11B is a schematic cross-sectional view at a position where the common driver 303 and the first conductive films C1 (1) to C1 (p) are electrically connected.
  • the stacking order of the gate driver 301 and the common driver 303, the first wirings G (1) to G (m), and the first conductive films C1 (1) to C1 (p ) In the reverse order.
  • the common driver 303 and the first conductive films C1 (1) to C1 (p) it is necessary to provide an opening in part of the gate driver 301.
  • the conductive film 712B and the first conductive film C1 (g) can be electrically connected.
  • FIG. 11 can be understood from the description of the above-described embodiment, for example, the description of FIG. 2, FIG. 9, and FIG. 10, the description thereof is omitted here.
  • FIG. 13 is a cross-sectional view illustrating a structure of a display device 600 of one embodiment of the present invention.
  • the display device 600 includes a display element 757 and a transistor MA, a transistor MD1, and a transistor MD2 which are electrically connected to the display element 757.
  • the display device 600 includes a display element 615 and a transistor ME1, a transistor ME2, and a transistor ME3 that are electrically connected to the display element 615.
  • a reflective liquid crystal element can be used as the display element 757.
  • the display element 615 has a function of emitting light, that is, a function of emitting light. Therefore, the display element 615 may be read as a light-emitting element.
  • the display element 615 may have a structure using an electroluminescence element (also referred to as an EL element), a structure using a light-emitting diode, or the like.
  • display elements having different functions are used for the display element 757 and the display element 615.
  • one of the display elements is a reflective liquid crystal element and the other is a transmissive EL element
  • a display device with excellent convenience can be obtained.
  • a reflective liquid crystal element is used in an environment where the external light is bright
  • a transmissive EL element is used in an environment where the external light is dark.
  • a display device with low power consumption and high display quality is used. It can be.
  • a display device 600 illustrated in FIG. 13 includes a transistor MA, a transistor MD1, a transistor MD2, a transistor ME1, a transistor ME2, a transistor ME3, a display element 757, a display element 615, an insulating film 701, and a coloring layer between a substrate 710 and a substrate 770. 613, a colored layer CF, and the like.
  • the substrate 770 and the insulating film 701 are bonded through a sealing material 730.
  • the substrate 710 and the insulating film 701 are bonded through an adhesive layer 619.
  • the display element 757 has a stacked structure in which a conductive film 751 functioning as an electrode, a layer 753 containing a liquid crystal material, and a conductive film 755 are stacked.
  • An alignment film AF1 is provided between the conductive film 751 and the layer 753 containing a liquid crystal material.
  • An alignment film AF2 is provided between the layer 753 containing a liquid crystal material and the insulating film 701.
  • the conductive film 755 has a function of reflecting visible light.
  • Light incident from the substrate 770 side is polarized by the optical film 710 ⁇ / b> P, passes through the layer 753 containing a liquid crystal material, and is reflected by the conductive film 755. Then, the light passes through the layer 753 containing the liquid crystal material and the colored layer CF again, and reaches the optical film 710P.
  • the alignment of the liquid crystal can be controlled by the voltage applied to the electrode 751, and the optical modulation of the light can be controlled. That is, the intensity of light emitted through the optical film 710P can be controlled. Further, the light that is not in a specific wavelength region is absorbed by the colored layer CF, so that the extracted light is, for example, light that exhibits a red color.
  • an opening 761 is provided in the light shielding layer BM in a region overlapping with the display element 615.
  • the display element 615 is electrically connected to the transistor ME1, the transistor ME2, and the transistor ME3.
  • the transistor ME1 is a transistor that controls selection and non-selection of a pixel including the display element 615, and may be referred to as a switching transistor or a selection transistor.
  • the transistor ME2 is a transistor that controls a current flowing through the display element 615, and may be referred to as a drive transistor.
  • the transistor ME3 has a gate driver function.
  • a terminal 617 which is electrically connected to the conductive film included in the transistor ME3 can be provided.
  • the flexible printed circuit board FPC2 and the conductive member ACF2 can be used to electrically connect to the terminal 617.
  • a signal or a potential input from the connected FPC 2 can be supplied to the display element 615 through a terminal 617.
  • the structure of the transistor MA described above can be applied as the structure of the transistor ME1.
  • the structure of the transistor MD1 described above can be applied as the structure of the transistors ME2 and ME3.
  • the display element 615 is a top emission type light emitting element.
  • the display element 615 has a stacked structure in which a conductive film 601 functioning as a pixel electrode, an EL layer 605, and a conductive film 607 functioning as a common electrode are stacked in this order.
  • the conductive film 601 is connected to the conductive film included in the transistor ME2.
  • the transistor ME2 has a function of controlling driving of the display element 615.
  • An insulating film 603 covers an end portion of the conductive film 601.
  • the conductive film 601 includes a material that reflects visible light
  • the conductive film 607 includes a material that transmits visible light.
  • An insulating film 609 is provided so as to cover the conductive film 607.
  • An insulating film 611 is provided so as to cover the insulating film 609.
  • the insulating film 611 functions as a planarization layer. Note that the number of insulating films is not limited, and may be a single layer or two or more layers.
  • a colored layer 613 is provided in contact with the insulating layer 611.
  • Light emitted from the display element 615 is emitted to the substrate 770 side through the coloring layer 613, the insulating film 701, the opening 761, and the like.
  • the display element 757 and the display element 615 can exhibit various colors by changing the color of the coloring layer depending on the pixel.
  • the display device 600 can perform color display using the display element 757.
  • the display device 600 can perform color display using the display element 615.
  • the transistor MA that drives the display element 757 and the transistor ME2 that drives the display element 615 are formed over different surfaces, and thus a structure and a material suitable for driving each display element are used. It is easy to form.
  • Embodiment Modes 1 to 5 For materials that can be used for the light-emitting element, the transistor, the insulating layer, the conductive layer, the adhesive layer, the connection layer, and the like, the description in Embodiment Modes 1 to 5 can be referred to.
  • 14A to 14G illustrate electronic devices. These electronic devices include a housing 5000, a display portion 5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including a power switch or operation switch), a connection terminal 5006, a sensor 5007 (force, displacement, position, speed, Measure acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared A microphone 5008, and the like.
  • a sensor 5007 force, displacement, position, speed, Measure acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared
  • a microphone 5008 and the like.
  • FIG. 14A illustrates a mobile computer which can include a switch 5009, an infrared port 5010, and the like in addition to the above components.
  • FIG. 14B illustrates a portable image reproducing device (eg, a DVD reproducing device) including a recording medium, which includes a second display portion 5002, a recording medium reading portion 5011, and the like in addition to the above-described components. it can.
  • FIG. 14C illustrates a goggle type display which can include a second display portion 5002, a support portion 5012, an earphone 5013, and the like in addition to the above components.
  • FIG. 14D illustrates a portable game machine that can include the memory medium reading portion 5011 and the like in addition to the above objects.
  • FIG. 14E illustrates a digital camera with a television receiving function, which can include an antenna 5014, a shutter button 5015, an image receiving portion 5016, and the like in addition to the above objects.
  • FIG. 14F illustrates a portable game machine that can include the second display portion 5002, the recording medium reading portion 5011, and the like in addition to the above objects.
  • FIG. 14G illustrates a portable television receiver that can include a charger 5017 and the like that can transmit and receive signals in addition to the above components.
  • the electronic devices illustrated in FIGS. 14A to 14G can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for controlling processing by various software (programs), Wireless communication function, function for connecting to various computer networks using the wireless communication function, function for transmitting or receiving various data using the wireless communication function, and reading and displaying programs or data recorded on the recording medium It can have a function of displaying on the section. Further, in an electronic device having a plurality of display units, one display unit mainly displays image information and another one display unit mainly displays character information, or the plurality of display units consider parallax.
  • a function of displaying a three-dimensional image, etc. by displaying the obtained image. Furthermore, in an electronic device having an image receiving unit, a function for capturing a still image, a function for capturing a moving image, a function for correcting a captured image automatically or manually, and a captured image on a recording medium (externally or incorporated in a camera) A function of saving, a function of displaying a photographed image on a display portion, and the like can be provided. Note that the functions of the electronic devices illustrated in FIGS. 14A to 14G are not limited to these, and the electronic devices can have various functions.
  • FIG. 14H illustrates a smart watch, which includes a housing 7302, a display panel 7304, operation buttons 7311 and 7312, a connection terminal 7313, a band 7321, a clasp 7322, and the like.
  • a display panel 7304 mounted on a housing 7302 also serving as a bezel portion has a non-rectangular display region. Note that the display panel 7304 may have a rectangular display region.
  • the display panel 7304 can display an icon 7305 indicating time, another icon 7306, and the like.
  • the smart watch illustrated in FIG. 14H can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for controlling processing by various software (programs), Wireless communication function, function for connecting to various computer networks using the wireless communication function, function for transmitting or receiving various data using the wireless communication function, and reading and displaying programs or data recorded on the recording medium It can have a function of displaying on the section.
  • a function for displaying various information (still images, moving images, text images, etc.) on the display unit a touch panel function, a function for displaying a calendar, date or time, a function for controlling processing by various software (programs), Wireless communication function, function for connecting to various computer networks using the wireless communication function, function for transmitting or receiving various data using the wireless communication function, and reading and displaying programs or data recorded on the recording medium It can have a function of displaying on the section
  • a speaker In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current are included in the housing 7302. , Voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement function), microphone, and the like. Note that a smart watch can be manufactured by using a light-emitting element for the display panel 7304.

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Abstract

L'invention concerne un dispositif d'affichage avec un cadre étroit. L'invention concerne également un dispositif d'affichage offrant une capacité de reconnaissance supérieure. L'invention concerne également un dispositif d'affichage à faible consommation d'énergie. L'invention concerne également un nouveau dispositif d'affichage. L'invention permet d'atteindre une configuration ayant une structure empilée obtenue en empilant un pilote de grille comprenant un premier transistor et un pilote commun comprenant un second transistor qui comporte un oxyde métallique dans une zone de formation de canal. Comme le pilote de grille possède une zone dédiée plus large que le pilote commun, une partie du pilote de grille peut être formée sur le même plan que le pilote commun.
PCT/IB2017/054713 2016-08-17 2017-08-02 Dispositif d'affichage et appareil électronique WO2018033817A1 (fr)

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KR1020197005731A KR102433524B1 (ko) 2016-08-17 2017-08-02 표시 장치 및 전자 기기
US16/325,226 US10642110B2 (en) 2016-08-17 2017-08-02 Display device and electronic appliance
US16/846,519 US11086175B2 (en) 2016-08-17 2020-04-13 Display device and electronic appliance

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