JPWO2018033817A1 - 表示装置および電子機器 - Google Patents
表示装置および電子機器 Download PDFInfo
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- JPWO2018033817A1 JPWO2018033817A1 JP2018534204A JP2018534204A JPWO2018033817A1 JP WO2018033817 A1 JPWO2018033817 A1 JP WO2018033817A1 JP 2018534204 A JP2018534204 A JP 2018534204A JP 2018534204 A JP2018534204 A JP 2018534204A JP WO2018033817 A1 JPWO2018033817 A1 JP WO2018033817A1
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- Prior art keywords
- film
- transistor
- insulating film
- display device
- conductive film
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
本実施の形態では、本発明の一態様の表示装置の構成について、図1乃至図10を参照しながら説明する。
本実施の形態で説明する表示装置700は、基板710と、画素702(i,j)と、表示素子750と、検知素子C(g,h)と、を有する(図7参照)。
表示装置700は、基板710、表示素子750または検知素子C(g,h)を有する。
基板710は、作製工程中の熱処理に耐えうる耐熱性を有する材料で作製されていればよく、例えば、ガラス基板を用いることができる。
基板770は、基板710に用いることができる材料を用いることができる。
導電性を備える材料を導電膜704、導電膜712A、導電膜712B、配線711または端子719に用いることができる。
導電性を備える材料をゲート線G(i)または信号線S(j)に用いることができる。例えば、配線711に用いることができる材料をゲート線G(i)または信号線S(j)に用いることができる。
検知素子C(g,h)は、静電容量、照度、磁力、電波または圧力等を検知して、検知した物理量に基づく信号を供給する機能を備える。
導電性を備える材料を第1の導電膜C1(g)に用いることができる。例えば、配線711に用いることができる材料を第1の導電膜C1(g)に用いることができる。
導電性を備える材料を第2の導電膜C2(h)に用いることができる。例えば、導電性および透光性を有する材料を第2の導電膜C2(h)に用いることができる。具体的には、導電性酸化物または酸化物半導体を用いることができる。例えば、インジウム、ガリウム、亜鉛および酸素を含む材料を用いることができる。
例えば、絶縁性の無機材料、絶縁性の有機材料または無機材料と有機材料を含む絶縁性の複合材料を、絶縁膜701、絶縁膜706、絶縁膜721A、絶縁膜721B、絶縁膜728または絶縁膜771に用いることができる。
例えば、光の反射または透過を制御する機能を備える表示素子を、表示素子750に用いることができる。例えば、液晶素子と偏光板を組み合わせた構成またはシャッター方式のMEMS表示素子等を用いることができる。
例えば、サーモトロピック液晶、低分子液晶、高分子液晶、高分子分散型液晶、強誘電性液晶、反強誘電性液晶等を用いることができる。これらの液晶材料は、条件により、コレステリック相、スメクチック相、キュービック相、カイラルネマチック相、等方相等を示す液晶材料を用いることができる。または、ブルー相を示す液晶材料を、液晶材料を含む層753に用いることができる。
導電性を備える材料を第3の導電膜751に用いることができる。
例えば、ボトムゲート型またはトップゲート型等のトランジスタをトランジスタMAに用いることができる。
シフトレジスタ等のさまざまな順序回路等をゲートドライバ301に用いることができる。例えば、トランジスタMD1、容量素子等をゲートドライバ301に用いることができる。
例えば、集積回路をソースドライバに用いることができる。具体的には、シリコン基板上に形成された集積回路を用いることができる。
コモンドライバは、第1の導電膜C1(1)乃至C1(p)と電気的に接続し、第1の導電膜C1(1)乃至C1(p)に信号を供給する機能等を備える(図3A参照)。
例えば、無機材料、有機材料または無機材料と有機材料の複合材料等を封止材730に用いることができる。
所定の色の光を透過する材料を着色膜CFに用いることができる。これにより、例えば着色膜CFをカラーフィルターに用いることができる。
光の透過を妨げる材料を遮光膜BMに用いることができる。これにより、例えば遮光膜BMをブラックマトリクスに用いることができる。
例えば、有機材料、無機材料または有機材料と無機材料の複合材料を構造体KBに用いることができる。これにより、構造体KBを挟む構成の間に所定の間隔を設けることができる。
例えば、ポリイミド等を配向膜AF1または配向膜AF2に用いることができる。具体的には、所定の方向に配向するようにラビング処理または光配向技術を用いて形成された配向膜を用いることができる。
例えば、偏光板、位相差板、拡散フィルム、反射防止膜または集光フィルム等を光学フィルム710Pまたは光学フィルム770Pに用いることができる。または、2色性色素を含む偏光板を光学フィルム710Pに用いることができる。
酸化物半導体を含む膜の抵抗率を制御する方法について説明する。
本実施の形態では、本発明の一態様の表示装置に用いることができるトランジスタの構成について、図12を参照しながら説明する。
図12(A)は、トランジスタ100の上面図であり、図12(C)は、図12(A)に示す切断線X1−X2間における切断面の断面図に相当し、図12(D)は、図12(A)に示す切断線Y1−Y2間における切断面の断面図に相当する。なお、図12(A)において、煩雑になることを避けるため、トランジスタ100の構成要素の一部(ゲート絶縁膜として機能する絶縁膜等)を省略して図示している。また、切断線X1−X2方向をチャネル長方向、切断線Y1−Y2方向をチャネル幅方向と呼称する場合がある。なお、トランジスタの上面図においては、以降の図面においても図12(A)と同様に、構成要素の一部を省略して図示する場合がある。
基板102の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板102として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板102として用いてもよい。
ゲート電極として機能する導電膜104、及びソース電極として機能する導電膜112a、及びドレイン電極として機能する導電膜112bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ100のゲート絶縁膜として機能する絶縁膜106、107としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁膜を、それぞれ用いることができる。なお、絶縁膜106、107の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜108としては、先に示す材料を用いることができる。
絶縁膜114、116は、酸化物半導体膜108に酸素を供給する機能を有する。また、絶縁膜118は、トランジスタ100の保護絶縁膜としての機能を有する。また、絶縁膜114、116は、酸素を有する。また、絶縁膜114は、酸素を透過することのできる絶縁膜である。なお、絶縁膜114は、後に形成する絶縁膜116を形成する際の、酸化物半導体膜108へのダメージ緩和膜としても機能する。
本実施の形態では、本発明の一態様の表示装置を有する別の構成について、図9を用いて説明する。
本実施の形態では、本発明の一態様の表示装置を有する別の構成について、図10を用いて説明する。
本実施の形態では、本発明の一態様の表示装置を有する別の構成について、図11を用いて説明する。
本実施の形態では、本発明の一態様の表示装置を有する別の構成について、図13を用いて説明する。なお、実施の形態1乃至実施の形態5と同じ構成に関しては、詳細な説明を省略する。
本実施の形態では、本発明の一態様の表示装置を有する表示モジュール及び電子機器について、図14を用いて説明する。
AF2 配向膜
BM 遮光膜
C 検知素子
C1 導電膜
C2 導電膜
CF 着色膜
G ゲート線
KB 構造体
MA トランジスタ
ME トランジスタ
MD トランジスタ
S 信号線
100 トランジスタ
102 基板
104 導電膜
106 絶縁膜
107 絶縁膜
108 酸化物半導体膜
112a 導電膜
112b 導電膜
114 絶縁膜
116 絶縁膜
118 絶縁膜
301 ゲートドライバ
302 ソースドライバ
303 コモンドライバ
305 表示領域
600 表示装置
601 導電膜
603 絶縁膜
605 EL層
607 導電膜
609 絶縁膜
611 絶縁膜
613 着色層
615 表示素子
617 端子
619 接着層
700 表示装置
701 絶縁膜
702 画素
704 導電膜
706 絶縁膜
710 基板
710P 光学フィルム
711 配線
712 導電膜
718 半導体膜
719 端子
721A 絶縁膜
721B 絶縁膜
724 導電膜
728 絶縁膜
730 封止材
750 表示素子
751 導電膜
753 液晶材料を含む層
755 導電膜
757 表示素子
761 開口
770 基板
770P 光学フィルム
771 絶縁膜
780 トランジスタ
790 トランジスタ
804 導電膜
806 絶縁膜
812 導電膜
818 半導体膜
821A 絶縁膜
821B 絶縁膜
824B 導電膜
828 絶縁膜
830 導電膜
880 トランジスタ
890 トランジスタ
891 トランジスタ
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
7302 筐体
7304 表示パネル
7305 アイコン
7306 アイコン
7311 操作ボタン
7312 操作ボタン
7313 接続端子
7321 バンド
7322 留め金
Claims (12)
- 第1の基板上の第1の駆動回路及び第1の配線と、
前記第1の駆動回路上の絶縁膜と、
前記絶縁膜上の第2の駆動回路及び第2の配線を有し、
前記第1の駆動回路は第1のトランジスタを有し、
前記第2の駆動回路は第2のトランジスタを有し、
前記第1のトランジスタのソース及びドレインの一つは、前記第1の配線と電気的に接続し、
前記第2のトランジスタのソース及びドレインの一つは、前記第2の配線と電気的に接続し、
前記第2のトランジスタはチャネル形成領域に金属酸化物を含み、
前記第1の基板の表面に垂直な方向において、前記第1の駆動回路と前記第2の駆動回路の少なくとも一部が重なり、
前記第1の駆動回路はゲートドライバを構成し、
前記第2の駆動回路はコモンドライバを構成する表示装置。 - 請求項1において、第3の駆動回路を有し、
前記第3の駆動回路は第3のトランジスタを有し、
前記第1の駆動回路と前記第3の駆動回路の少なくとも一部が重なり、
前記第1の駆動回路と前記第3の駆動回路はゲートドライバを構成する表示装置。 - 第1の基板上の第1の駆動回路及び第1の配線と、
前記第1の駆動回路上の絶縁膜と、
前記絶縁膜上の第2の駆動回路及び第2の配線を有し、
前記第1の駆動回路は第1のトランジスタを有し、
前記第2の駆動回路は第2のトランジスタを有し、
前記第1のトランジスタのソース及びドレインの一つは、前記第2の配線と電気的に接続し、
前記第2のトランジスタのソース及びドレインの一つは、前記第1の配線と電気的に接続し、
前記第1のトランジスタはチャネル形成領域に金属酸化物を含み、
前記第1の基板の表面に垂直な方向において、
前記第1の駆動回路と前記第2の駆動回路の少なくとも一部が重なり、
前記第1の駆動回路はコモンドライバを構成し、
前記第2の駆動回路はゲートドライバを構成する表示装置。 - 請求項3において、第3の駆動回路を有し、
前記第3の駆動回路は第3のトランジスタを有し、
前記第2の駆動回路と前記第3の駆動回路の少なくとも一部が重なり、
前記第2の駆動回路及び前記第3の駆動回路はゲートドライバを構成する表示装置。 - 前記第1のトランジスタは、チャネル形成領域に金属酸化物を含む、請求項1に記載の表示装置。
- 前記第1のトランジスタ及び前記第3のトランジスタは、それぞれチャネル形成領域に金属酸化物を含む、請求項2に記載の表示装置。
- 前記第2のトランジスタは、チャネル形成領域に金属酸化物を含む、請求項3に記載の表示装置。
- 前記第2のトランジスタ及び前記第3のトランジスタは、それぞれチャネル形成領域に金属酸化物を含む、請求項4に記載の表示装置。
- 前記第1の駆動回路は、前記第2の駆動回路及び前記第3の駆動回路よりも広い面積を有する、請求項2に記載の表示装置。
- 前記第2の駆動回路は、前記第1の駆動回路及び前記第3の駆動回路よりも広い面積を有する、請求項4に記載の表示装置。
- 前記第1のトランジスタ及び前記第2のトランジスタは、前記第1の基板の表面に垂直な方向において、少なくとも一部が重なっている、請求項1乃至4のいずれか一項に記載の表示装置。
- 前記第1の配線はゲート線である、請求項1乃至4のいずれか一項に記載の表示装置。
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CN103715196B (zh) * | 2013-12-27 | 2015-03-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
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- 2017-08-02 JP JP2018534204A patent/JP6916794B2/ja active Active
- 2017-08-02 KR KR1020197005731A patent/KR102433524B1/ko active IP Right Grant
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WO2014034617A1 (ja) * | 2012-08-30 | 2014-03-06 | シャープ株式会社 | 回路基板及び表示装置 |
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US20190204654A1 (en) | 2019-07-04 |
JP2022176195A (ja) | 2022-11-25 |
JP2021185411A (ja) | 2021-12-09 |
KR20190035799A (ko) | 2019-04-03 |
US10642110B2 (en) | 2020-05-05 |
JP6916794B2 (ja) | 2021-08-11 |
WO2018033817A1 (ja) | 2018-02-22 |
US11086175B2 (en) | 2021-08-10 |
US20200310187A1 (en) | 2020-10-01 |
KR102433524B1 (ko) | 2022-08-17 |
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