JP7297984B2 - 表示装置、表示モジュールおよび電子機器 - Google Patents
表示装置、表示モジュールおよび電子機器 Download PDFInfo
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- JP7297984B2 JP7297984B2 JP2022094366A JP2022094366A JP7297984B2 JP 7297984 B2 JP7297984 B2 JP 7297984B2 JP 2022094366 A JP2022094366 A JP 2022094366A JP 2022094366 A JP2022094366 A JP 2022094366A JP 7297984 B2 JP7297984 B2 JP 7297984B2
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Description
本実施の形態では、本発明の一態様の表示装置について図1~図25を用いて説明する。
まず、図1及び図2を用いて、本実施の形態の表示装置について説明する。
次に、本実施の形態の表示装置が有する画素について、図2を用いて説明する。
次に、図3~図8を用いて、本実施の形態の表示装置について説明する。
次に、表示装置100Aにおける、トランジスタ201Aとトランジスタ206Aの作製方法について、図5を用いて説明する。
次に、表示装置100Aとは異なる、トランジスタ201Aとトランジスタ206Aを用いた表示装置について、図6及び図7を用いて説明する。これら表示装置は、表示装置100Aとは、液晶素子40の構造が異なる。また、表示部62のトランジスタの構成が、表示装置100Aとは異なる表示装置100Bについて、図8を用いて説明する。なお、これらの表示装置の斜視図は、図3に示す表示装置100Aと同様である。なお、以下の表示装置の構成例において、先の表示装置と同様の構成については説明を省略することがある。
次に、本実施の形態の表示装置の各構成要素に用いることができる材料等の詳細について、説明を行う。なお、既に説明した構成要素については説明を省略する場合がある。また、以降に示す表示装置及びタッチパネル、並びにそれらの構成要素にも、以下の材料を適宜用いることができる。
次に、図9~図11を用いて、本実施の形態の表示装置について説明する。
次に、図10及び図11を用いて、表示装置100Cにおける、トランジスタ201C及びトランジスタ206Cの作製方法について説明する。なお、以降のトランジスタの作製方法において、先のトランジスタの作製方法と同様の工程、材料については、説明を省略することがある。
次に、図12及び図13を用いて、本実施の形態の表示装置について説明する。
次に、表示装置100Dにおける、トランジスタ201D及びトランジスタ206Dの作製方法について、図13を用いて説明する。
次に、図14及び図15を用いて、本実施の形態の表示装置について説明する。
次に、表示装置100Eにおける、トランジスタ201E及びトランジスタ206Eの作製方法について、図15を用いて説明する。
次に、図16及び図17を用いて、本実施の形態の表示装置について説明する。
次に、表示装置100Fにおける、トランジスタ201F及びトランジスタ206Fの作製方法について、図17を用いて説明する。
次に、図18~図20を用いて本実施の形態の表示装置について説明する。以下で例示する表示装置110A~表示装置110Cは、駆動回路部64のトランジスタの半導体層が、金属酸化物を有する点で共通する。トランジスタの半導体層が金属酸化物を有すると、ソース-ドレイン間の絶縁耐圧を高めることができる。その結果、駆動回路部64のトランジスタの信頼性を高めることができる。
図21に、表示装置120Aの断面図を示す。図22に、表示装置120Bの断面図を示す。
本発明の一態様は、タッチセンサが搭載された表示装置(入出力装置またはタッチパネルともいう)に適用することができる。上述の各表示装置の構成を、タッチパネルに適用することができる。本実施の形態では、図4に示す表示装置100Aにタッチセンサを搭載する例を主に説明する。
図25に、タッチパネルの一例を示す。図25(A)は、タッチパネル350Bの斜視図である。図25(B)は、図25(A)を展開した斜視概略図である。なお、明瞭化のため、代表的な構成要素のみを示している。図25(B)では、基板61を破線で輪郭のみ明示している。
図26(A)、(B)に、本実施の形態の表示装置が有する画素の一例である断面図をそれぞれ示す。図26(A)、(B)の断面図は、図2(B)の断面図の変形例ということもできる。
本実施の形態では、本発明の一態様の表示装置で行うことができる動作モードについて図27を用いて説明する。
本実施の形態では、タッチセンサの駆動方法の例について、図面を参照して説明する。
図28(A)は、相互容量方式のタッチセンサの構成を示すブロック図である。図28(A)では、パルス電圧出力回路551、電流検出回路552を示している。なお図28(A)では、パルス電圧が与えられる電極521、電流の変化を検知する電極522をそれぞれ、X1乃至X6、Y1乃至Y6のそれぞれ6本の配線として示している。また図28(A)は、電極521及び電極522が重畳することで形成される容量553を図示している。なお、電極521と電極522とはその機能を互いに置き換えてもよい。
図29(A)は、表示装置の構成例を示すブロック図である。図29(A)ではゲート駆動回路GD(走査線駆動回路)、ソース駆動回路SD(信号線駆動回路)、複数の画素pixを有する表示部を示している。なお図29(A)では、ゲート駆動回路GDに電気的に接続されるゲート線x_1乃至x_m(mは自然数)、ソース駆動回路SDに電気的に接続されるソース線y_1乃至y_n(nは自然数)に対応して、画素pixではそれぞれに(1,1)乃至(n,m)の符号を付している。
図30(A)乃至(D)は、一例として図28(A)、(B)で説明したタッチセンサと、図29(A)、(B)で説明した表示部を1sec.(1秒間)駆動する場合に、連続するフレーム期間の動作について説明する図である。なお図30(A)では、表示部の1フレーム期間を16.7ms(フレーム周波数:60Hz)、タッチセンサの1フレーム期間を16.7ms(フレーム周波数:60Hz)とした場合について示している。図30及び図31の1F、2F・・・は、表示部またはタッチセンサのフレームを示す。
本実施の形態では、本発明の一態様で開示されるトランジスタの半導体層に用いることができる金属酸化物について説明する。なお、トランジスタの半導体層に金属酸化物を用いる場合、当該金属酸化物を酸化物半導体と読み替えてもよい。
本実施の形態では、本発明の一態様の電子機器について説明する。
図32(A)~(C)に示す携帯情報端末は、様々な機能を有することができる。例えば、様々な情報(静止画、動画、テキスト画像など)を表示部に表示する機能、タッチパネル機能、カレンダー、日付または時刻などを表示する機能、様々なソフトウェア(プログラム)によって処理を制御する機能、無線通信機能、無線通信機能を用いて様々なコンピュータネットワークに接続する機能、無線通信機能を用いて様々なデータの送信または受信を行う機能、記録媒体に記録されているプログラムまたはデータを読み出して表示部に表示する機能、等を有することができる。なお、図32(A)~(C)に示す携帯情報端末が有する機能はこれらに限定されず、その他の機能を有していてもよい。
まず、ガラス基板上に、バックゲートとして機能する導電層291を形成した。導電層291は、スパッタリング装置を用いて厚さ約100nmのタングステン膜を成膜した後、当該タングステン膜を加工することにより形成した。
次に、トランジスタのId-Vg特性を測定した結果について説明する。トランジスタのId-Vg特性の測定条件としては、ゲートとして機能する導電層296に印加する電圧(ゲート電圧(Vg))、及びバックゲートとして機能する導電層291に印加する電圧(バックゲート電圧(Vbg))を、-15Vから+20Vまで0.25Vのステップで印加した。また、ソースとして機能する導電層に印加する電圧(ソース電圧(Vs))を0V(comm)とし、ドレインとして機能する導電層に印加する電圧(ドレイン電圧(Vd))を、0.1V及び20Vとした。
次に、トランジスタのGBT試験を行った結果について説明する。本実施例では、GBTストレス試験として、ゲートに正の電圧を印加する試験(PBTS)と、光を照射しながらゲートに負の電圧を印加する試験(NBITS)を行った。PBTSでは、トランジスタが形成されている基板を60℃に保持し、トランジスタのソースとドレインに0V、ゲートに30Vの電圧を印加し、この状態を1時間保持した。NBITSでは、10000lxの白色LED光を照射した状態でゲートに-30Vの電圧を印加し、この状態を3600秒間保持した。
次に、トランジスタの定電流ストレス試験を行った結果について説明する。定電流ストレス試験は、大気雰囲気下、暗状態(Dark)で行った。定電流ストレス試験では、基板の温度を60℃とし、ソース電位を接地電位(GND)、ドレイン電位を10V、ゲート電位を0.82Vとし、約18時間保持した。
まず、ガラス基板上に、バックゲートとして機能する導電層291を形成した。導電層291は、スパッタリング装置を用いて厚さ約100nmのタングステン膜を成膜した後、当該タングステン膜を加工することにより形成した。
次に、トランジスタのId-Vd特性を測定した結果について説明する。トランジスタのId-Vd特性は、ゲート電圧を1.6Vとし、ドレイン電圧を0Vから15Vの範囲で、0.2V間隔で掃引することで測定した。
11 基板
12 基板
13 バックライトユニット
14 トランジスタ
15 液晶素子
16 トランジスタ
21 画素電極
22 液晶層
23 共通電極
25 導電層
26 絶縁層
27 導電層
28 導電層
29 接続体
31 タッチセンサユニット
32 絶縁層
40 液晶素子
45 光
45a 光
45b 光
51 基板
61 基板
62 表示部
63 接続部
64 駆動回路部
65 配線
66 非表示領域
68 表示領域
72 FPC
72a FPC
72b FPC
73 IC
73a IC
73b IC
100A~100F 表示装置
110A~110C 表示装置
111 画素電極
112 共通電極
113 液晶層
120A~120B 表示装置
121 オーバーコート
124 電極
125 絶縁層
126 導電層
127 電極
128 電極
130 偏光板
131 着色層
132 遮光層
133a 配向膜
133b 配向膜
137 配線
138 配線
140A~140B 表示装置
141 接着層
160 保護基板
161 バックライト
162 基板
163 接着層
164 接着層
165 偏光板
166 偏光板
167 接着層
168 接着層
169 接着層
201A~201F トランジスタ
202A~202C トランジスタ
204 接続部
206A~206F トランジスタ
207A~207C トランジスタ
208A~208B トランジスタ
211 絶縁層
212 絶縁層
213 絶縁層
215 絶縁層
216 下地層
217 絶縁層
218 絶縁層
220 絶縁層
221 導電層
222a~222d 導電層
223 導電層
224 信号線
225 絶縁層
229 導電層
231 半導体層
231a チャネル領域
231b 低抵抗領域
232 不純物半導体層
233 絶縁層
242 接続体
242b 接続体
251 導電層
291 導電層
292 絶縁層
293 半導体層
293a チャネル領域
293b 低抵抗領域
293c LDD領域
294a 導電層
294b 導電層
295 絶縁層
296 導電層
900 画素
900s 遮光領域
900t 透過領域
902 配線
904 配線
914 トランジスタ
915 容量素子
916 配線コンタクト部
918B 表示領域
918G 表示領域
918R 表示領域
918W 表示領域
930LC 液晶素子
932BM 遮光膜
932CF 着色膜
Claims (3)
- 表示部及び駆動回路部を有する表示装置であって、
前記表示部は、第1のトランジスタ、走査線、信号線、容量素子、及び着色層を有し、
前記駆動回路部は、第2のトランジスタを有し、
前記第1のトランジスタは、第1のゲート電極と、前記第1のゲート電極上の第1のゲート絶縁層と、前記第1のゲート絶縁層上の第1の半導体層と、前記第1の半導体層上及び前記第1のゲート絶縁層上の第1のソース電極及び第1のドレイン電極と、前記第1のソース電極及び前記第1のドレイン電極上の第2のゲート絶縁層と、前記第2のゲート絶縁層上の第1のバックゲート電極と、を有し、
前記第2のトランジスタは、第2のバックゲート電極と、前記第2のバックゲート電極上の前記第1のゲート絶縁層と、前記第1のゲート絶縁層上の第2の半導体層と、前記第2の半導体層上の第3のゲート絶縁層と、前記第3のゲート絶縁層上の第2のゲート電極と、前記第2の半導体層と電気的に接続される第2のソース電極及び第2のドレイン電極と、を有し、
前記第1の半導体層及び前記第2の半導体層は、金属酸化物を有し、
前記走査線及び前記信号線は、それぞれ、金属層を有し、
前記走査線は、前記第1のゲート電極として機能する領域を有し、
前記信号線は、前記第1のソース電極または前記第1のドレイン電極の一方と電気的に接続され、
前記第1のソース電極または前記第1のドレイン電極の他方は、画素電極と電気的に接続され、
前記第1のゲート電極は、可視光を透過する導電性材料を有し、
前記第1の半導体層は、前記第1のゲート電極と重なる領域を有し、
前記第1のソース電極及び前記第1のドレイン電極は、可視光を透過する導電性材料を有し、
前記第1のバックゲート電極及び前記第2のゲート電極は、酸化物導電体を有し、
前記画素電極及び前記容量素子は、可視光を透過する機能を有し、
前記容量素子は、前記画素電極及び前記着色層と重なる領域を有する、表示装置。 - 請求項1に記載の表示装置と、
回路基板と、を有する表示モジュール。 - 請求項2に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、または操作ボタンの少なくともいずれか一と、を有する、電子機器。
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