WO2018019045A1 - 掩膜板及其制作方法、掩膜组件 - Google Patents

掩膜板及其制作方法、掩膜组件 Download PDF

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Publication number
WO2018019045A1
WO2018019045A1 PCT/CN2017/088040 CN2017088040W WO2018019045A1 WO 2018019045 A1 WO2018019045 A1 WO 2018019045A1 CN 2017088040 W CN2017088040 W CN 2017088040W WO 2018019045 A1 WO2018019045 A1 WO 2018019045A1
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WIPO (PCT)
Prior art keywords
mask
region
edge
relief structure
bending
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Ceased
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PCT/CN2017/088040
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English (en)
French (fr)
Inventor
林治明
王震
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/745,338 priority Critical patent/US10662519B2/en
Publication of WO2018019045A1 publication Critical patent/WO2018019045A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure relates to the field of display, and in particular to a mask, a method of fabricating the same, and a mask assembly.
  • OLEDs organic electroluminescence display devices
  • the OLED display panel comprises a plurality of sub-pixel units arranged in an array, each sub-pixel unit comprises an anode, a light-emitting layer and a cathode, wherein the light-emitting layer is formed by an organic light-emitting material, and currently a mask (for example, a fine metal mask) is mainly used.
  • a mask for example, a fine metal mask
  • English is Fine metal mask (referred to as FMM) and is fabricated in each sub-pixel unit by evaporation process.
  • FMM Fine metal mask
  • MFA Mosk Frame Assembly
  • the mask When the mask is welded to the frame, the mask is usually stretched under the action of the frame, so that the mask is easy to be used. There are different degrees of curling at the edges on both sides of the upper evaporation effective zone, and in the vapor deposition process, it is easy to cause defects in the corresponding positions of the vapor-deposited product.
  • the technical problem to be solved by the present disclosure is to solve the problem that the edge of the evaporation effective region is curled due to the stretching of the mask when the existing mask is mounted on the frame.
  • the technical solution of the present disclosure provides a a masking plate comprising an evaporation effective region and an edge region between the edge extending in the stretching direction of the evaporation effective region and the edge of the mask extending in the stretching direction, the edge region A bending relief structure is provided for relieving edge curling of the evaporation active area when the mask sheet is stretched in the direction in which the edges extend.
  • the bending relief structure comprises a first strip structure, and the extending direction of the first strip structure is not parallel to the extending direction of the edge.
  • the extending direction of the first strip structure is perpendicular to the extending direction of the edge.
  • the bending relief structure further comprises a second strip structure that intersects the first strip structure.
  • the extending direction of the second strip structure is parallel to the extending direction of the edge.
  • the bending relief structure comprises a plurality of the first strip structures.
  • the distance between adjacent two first strip-like structures decreases as the tensile force experienced by the edge regions increases.
  • the edge region includes a first region and a second region adjacent in an extending direction of the edge, and the distance between the first region and the center of the evaporation effective region is greater than the second region and a distance between the centers of the evaporation effective regions, a distance between adjacent two first strip structures on the first region is greater than between adjacent two first strip structures on the second region distance.
  • the mask comprises a plurality of mask units, each mask unit comprising a plurality of the bend relief structures.
  • the periphery of the bending relief structure is a non-hollowed region, and the thickness of the non-hollowed region is less than the thickness of the bending relief structure.
  • the periphery of the bending relief structure is a hollowed out area.
  • the mask comprises a plurality of mask units arranged in a direction in which the edges extend.
  • the bending relief structure is the same as the evaporation effective area of the mask material.
  • the present disclosure also provides a mask assembly including a frame and the above-described mask, the mask being mounted on the frame and configured to extend at the rim Stretched in the direction.
  • the present disclosure also provides a method for fabricating a mask, the mask comprising an evaporation effective region and an edge of the evaporation active region and the mask.
  • the interfacial region further includes forming a bending relief structure on the edge region, the bending relief structure for relieving the vapor deposition effective region when the mask panel is stretched according to the extending direction of the edge The edges are curled.
  • the forming a bending relief structure on the edge region comprises:
  • a pattern of the bending relief structure is formed on the edge region by a half etching process, the periphery of the bending relief structure being a non-hollowed region, the thickness of the non-hollow region being less than the thickness of the bending relief structure.
  • the forming a bending relief structure on the edge region comprises:
  • a pattern of the bending relief structure is formed on the edge region by a full etching process, the periphery of the bending relief structure being a hollowed out region.
  • the forming a bending relief structure on the edge region comprises:
  • a pattern of the bending relief structure is formed on the edge region by an attaching process.
  • FIG. 1 is a schematic view of a mask provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a bending relief structure on a mask provided by an embodiment of the present disclosure
  • Figure 3a is a schematic view of the mask sheet when it is stretched when the bend relief structure is not provided;
  • Figure 3b is a schematic view of the bending relief structure of Figure 2 when stretched
  • FIG. 4 is a schematic diagram of another bending relief structure on a mask provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of a mask assembly provided by an embodiment of the present disclosure.
  • Embodiments of the present disclosure provide a mask panel including at least one mask unit, the mask unit including an evaporation effective region and a portion located in the evaporation effective region and the mask An edge region between the edges, the edge region is provided with a bending relief structure for relieving the vapor deposition when the mask is stretched according to the extending direction of the first edge
  • the edge of the effective area is curled (i.e., the degree of edge curling of the evaporation effective area is reduced).
  • the mask provided by the embodiment of the present disclosure can effectively alleviate the mask plate by bending the relief structure by providing a bending relief structure on the mask plate when the mask plate is stretched by being welded on the frame.
  • the edge of the vapor-deposited active area is curled to avoid defects in the corresponding position of the vapor-deposited product during the evaporation process.
  • one or more strip structures may be disposed as the bend relief structure in the above edge region of the mask, and the extending direction of the strip structure is not parallel to the extending direction of the first edge, when the mask is in accordance with the first When the extending direction of the edge is stretched, the strip structure is subjected to bending deformation, so that the evaporation effective region produces an outward stretching effect, thereby alleviating the curl state of the edge of the vapor deposition effective region.
  • the strip structure extends in a direction perpendicular to the extending direction of the first edge.
  • FIG. 1 is a schematic diagram of a mask provided in an embodiment of the present disclosure.
  • the mask is rectangular in shape and includes two first edges 1 a and two second edges 1 b.
  • An edge region between the region 110 and the first edge 1a of the mask, the edge region being provided with a bending relief structure 120 for being used when the mask is extended according to the first edge 1a
  • the edge curl of the evaporation effective area is alleviated during stretching.
  • FIG. 2 is an enlarged schematic view showing the structure in the dotted line frame of FIG.
  • a bending relief structure 120 includes a second strip structure 121 and a first strip structure 122 intersecting the second strip structure 121, and the extending direction of the first strip structure 122 is not parallel to the extending direction of the first edge 1a ;
  • Fig. 3a shows the state when the mask sheet is stretched when the bending relief structure is not provided, and when the mask sheet is stretched in the direction of the arrow in the figure, the stretching forces F and F' follow the first edge 1a
  • the extending direction acts on both ends of the mask, and a force f' which causes the vapor deposition effective region 110 to contract is generated on the mask unit 100.
  • the bending relief structure is provided, as shown in FIG. 3b, when the mask is stretched in the extending direction of the first edge 1a, the tensile forces F and F' are transmitted through the second strip 121.
  • the first strip structure 122 is deformed, and the bending deformation of the first strip structure 122 causes the outer edge of the edge region of the mask unit to contract inward, so that forces f and f' are generated, due to the bending relief structure 120 and the mask unit
  • the evaporation effective areas 110 are connected to each other, so that the contraction force f causes the evaporation effective area 110 to have an outward stretching effect by the interaction force, counteracting the force that causes the evaporation effective area 110 to contract, thereby alleviating The curled state of the edge of the evaporation effective area 110;
  • the extending direction of the first strip structure 122 is perpendicular to the extending direction of the first edge 1a, and the extending direction of the second strip structure 121 is parallel to the extending direction of the first edge 1a. That is, the first strip structure 122 and the second strip structure 121 may be vertically disposed to improve the effect of alleviating the edge curl of the vapor deposition effective region.
  • each of the bend relief structures 120 may include more The first strip structure 122.
  • the distance between adjacent two first strip-like structures decreases as the tensile force experienced by the edge regions increases. That is to say, in the place where the edge area is subjected to a large pulling force, the mask will experience a larger curl, so that a larger first strip structure is disposed at the position, that is, the density of the first strip structure is larger. Where the tension in the edge region is small, a relatively small first strip-like structure is provided, so that the edge relief effect of the bending relief structure is more uniform at the edge of the edge region.
  • the change in the distance between two adjacent first strip-like structures may be a linear change with a change in the tensile force experienced by the edge region, or may also be a simple jump change.
  • the edge region includes a first region and a second region adjacent in an extending direction of the first edge, the first region and the evaporation effective region
  • the distance of the center is greater than the distance between the second area and the center of the evaporation effective area
  • the distance between two adjacent first strip structures on the first area is greater than the adjacent area on the second area
  • the distance between the two first strip structures may be set in the middle portion of the edge region (ie, the portion of the edge region that is closer to the center of the vapor deposition effective region).
  • the strip structure in this position, enhances the effect of relieving the edge curl, so that the edge curling relief effect at the position is more prominent, which is advantageous for improving the edge curl relief effect of the entire edge region.
  • each of the bending relief structures 120 may also include only the first strip structure 122 without providing the second strip structure 121, thereby correspondingly reducing the difficulty in fabricating the bending relief structure.
  • each mask unit 100 may include a plurality of bending relief structures 120, and the number of bending relief structures in each mask unit may be based on the edge of the evaporation effective area The degree of curling is set.
  • a bending relief structure may be provided on each side of the evaporation effective area in each mask unit, or as shown in FIG. 1, the evaporation effective area in each mask unit.
  • Two curved relief structures are provided on each side of the two sides.
  • a mask provided by an embodiment of the present disclosure by providing a bending relief structure thereon, the bending relief structure comprising a second strip structure and a first strip structure intersecting the second strip structure, in the stretched During the process, the tensile force is transmitted through the second strip structure, causing the first strip structure to bend, and the outer boundary of the edge region of the mask unit is moved inward, thereby causing a tendency of indentation, in the process of contraction. , the evaporation effective area of the mask unit is stretched outward, thereby alleviating the curl state of the edge of the evaporation effective area, and avoiding the occurrence of defects in the corresponding position of the vapor-deposited product during the evaporation process.
  • the edge region of the existing mask may be etched, and the above-mentioned bending relief structure is formed by an etching process, and the structure of the bending relief structure and the evaporation effective region of the mask unit is The material is the same material;
  • the edge region of the mask may be subjected to half etching (Half Etching).
  • the bending relief structure is a convex structure of the formed edge region, and the periphery of the bending relief structure is a non-hollowed region.
  • the thickness of the non-hollowed region is less than the thickness of the bending relief structure, that is, the surface height of the bending relief structure is higher than the surface height of the peripheral region thereof;
  • the periphery of the bending relief structure may also be fully etched (Full Etching), even if the periphery of the bending relief structure is a hollow area, and its structure is as shown in FIG. 4, thereby making the first strip structure of the bending relief structure.
  • 122 obtains a larger bending effect, and exerts a greater stretching effect on the evaporation effective area of the masking plate, thereby further alleviating the curling state of the edge of the evaporation effective area.
  • a pattern of the bending relief structure may be formed on the edge region by an attaching process, for example, a material forming a bending relief structure is attached to the underside of the mask sheet at the edge region, ie, steaming of the mask sheet On the plating surface, a bending relief structure that protrudes from the plane of the mask is thus formed.
  • the bending relief structure may be the same material or a different material as the material of the structure of the evaporation effective area of the mask unit.
  • the bending relief structure may also form a concave portion as long as the shape of the bending relief structure is designed such that during the stretching process, the evaporation effective area of the mask unit is stretched outward, for example, bending is relieved.
  • the structure may be configured to form an elliptical (or rugby-like) region with the major axis of the ellipse extending in a direction in which the mask is stretched, forming a recess in the elliptical region relative to the outer recess, such that being stretched
  • the evaporation effective area of the mask unit is stretched outward, thereby alleviating the curl state of the edge of the evaporation effective area and avoiding evaporation during the evaporation process.
  • the corresponding position of the product is bad.
  • embodiments of the present disclosure also provide a mask assembly including a frame and the above-described mask plate mounted on the frame and configured to extend in a direction in which the first edge extends Stretched.
  • FIG. 5 is a schematic diagram of a mask assembly including a frame 2 and a plurality of masks 1 welded to the frame 2 according to an embodiment of the present disclosure. And being in a stretched state under the action of the frame 2, wherein the mask 1 can be a mask of the above structure, so that the edge curl of the evaporation effective area on the mask can be effectively alleviated, and the evaporation can be avoided. In the process, defects occur in the corresponding positions of the vapor-deposited product.
  • an embodiment of the present disclosure further provides a method for fabricating a mask, comprising forming at least one mask unit, the mask unit including an evaporation effective region, and the vapor deposition effective region and the mask An edge region between the first edges of the panel further comprising forming a bend relief structure on the edge region, the bend relief structure being used to relieve when the mask panel is stretched in accordance with an extension direction of the first edge The edge of the evaporation effective area is curled.
  • the forming a bending relief structure on the edge region includes:
  • a pattern of the bending relief structure is formed on the edge region by a half etching process, the periphery of the bending relief structure being a non-hollowed region, the thickness of the non-hollow region being less than the thickness of the bending relief structure.
  • the forming a bending relief structure on the edge region includes:
  • a pattern of the bending relief structure is formed on the edge region by a full etching process, the periphery of the bending relief structure being a hollowed out region.

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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Abstract

一种掩膜板及其制作方法、掩膜组件。该掩膜板包括蒸镀有效区（110）和位于所述蒸镀有效区（110）的沿拉伸方向延伸的边沿与所述掩膜板的沿拉伸方向延伸的边沿之间的边缘区域，所述边缘区域上设置有弯曲缓解结构（120），所述弯曲缓解结构（120）用于当所述掩膜板按照所述边沿的延伸方向被拉伸时缓解所述蒸镀有效区（110）的边缘卷曲。

Description

掩膜板及其制作方法、掩膜组件
相关申请的交叉引用
本申请要求于2016年7月29日递交的中国专利申请CN201610617389.3的权益，其全部内容通过参考并入本文中。
技术领域
本公开涉及显示领域，尤其涉及一种掩膜板及其制作方法、掩膜组件。
背景技术
目前，有机电致发光显示器件(Organic Electroluminesecent Display，OLED)凭借其低功耗、高色饱和度、广视角、薄厚度、能实现柔性化等优异性能，已经逐渐成为显示领域的主流。
OLED显示面板包括阵列排布的多个子像素单元，每一个子像素单元包括阳极、发光层和阴极，其中，发光层采用有机发光材料形成，目前主要采用掩膜板(例如精细金属掩膜版，英文为Fine metal mask，简称FMM)并通过蒸镀工艺制作在各子像素单元中，在进行蒸镀工艺时，掩膜板必须焊接在框架上然后放在蒸镀机里面使用，掩膜板和框架焊接在一起称为MFA(Mask Frame Assembly，掩膜组件)，当掩膜板被焊接在框架上时，掩膜板在框架的作用下通常处于被拉伸的状态，从而容易使掩膜板上蒸镀有效区两侧的边缘存在不同程度的卷曲问题，在蒸镀工艺中，容易在蒸镀的产品的对应位置上产生不良。
发明内容
(一)要解决的技术问题
本公开要解决的技术问题是：解决现有的掩膜板安装在框架上时，由于掩膜板被拉伸而造成的蒸镀有效区边缘卷曲的问题。
(二)技术方案
为至少部分地解决上述技术问题，本公开的技术方案提供了一种 掩膜板，包括蒸镀有效区和位于所述蒸镀有效区的沿拉伸方向延伸的边沿与所述掩膜板的沿拉伸方向延伸的边沿之间的边缘区域，所述边缘区域上设置有弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲。
可选地，所述弯曲缓解结构包括第一条状结构，且所述第一条状结构的延伸方向与所述边沿的延伸方向不平行。
可选地，所述第一条状结构的延伸方向与所述边沿的延伸方向垂直。
可选地，所述弯曲缓解结构还包括与所述第一条状结构相交叉的第二条状结构。
可选地，所述第二条状结构的延伸方向与所述边沿的延伸方向平行。
可选地，所述弯曲缓解结构包括多个所述第一条状结构。
可选地，相邻两个第一条状结构之间的距离随着边缘区域所承受的拉力的增大而减小。
可选地，所述边缘区域包括在所述边沿的延伸方向上相邻的第一区域和第二区域，所述第一区域与所述蒸镀有效区中心的距离大于所述第二区域与所述蒸镀有效区中心的距离，在所述第一区域上相邻两个第一条状结构之间的距离大于在所述第二区域上相邻两个第一条状结构之间的距离。
可选地，所述掩膜板包括多个掩膜单元，每一个掩膜单元包括多个所述弯曲缓解结构。
可选地，所述弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度。
可选地，所述弯曲缓解结构的周边为镂空区域。
可选地，所述掩膜板包括多个掩膜单元，所述多个掩膜单元按照所述边沿的延伸方向排列。
可选地，所述弯曲缓解结构与所述掩膜板的蒸镀有效区为相同材 料。
为至少部分地解决上述技术问题，本公开还提供了一种掩膜组件，包括框架和上述的掩膜板，所述掩膜板安装在所述框架上并被配置为在所述边沿的延伸方向上被拉伸。
为至少部分地解决上述技术问题，本公开还提供了一种掩膜板的制作方法，所述掩膜板包括蒸镀有效区和位于所述蒸镀有效区与所述掩膜板的边沿之间的边缘区域，还包括在所述边缘区域上形成弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲。
可选地，所述在所述边缘区域上形成弯曲缓解结构包括：
通过半刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度。
可选地，所述在所述边缘区域上形成弯曲缓解结构包括：
通过全刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为镂空区域。
可选地，所述在所述边缘区域上形成弯曲缓解结构包括：
通过贴附工艺在所述边缘区域上形成所述弯曲缓解结构的图案。
附图说明
图1是本公开的实施例提供的一种掩膜板的示意图；
图2是本公开的实施例提供的一种掩膜板上的弯曲缓解结构的示意图；
图3a是在未设置弯曲缓解结构时掩膜板被拉伸时的示意图；
图3b是图2中的弯曲缓解结构被拉伸时的示意图；
图4是本公开的实施例提供的另一种掩膜板上的弯曲缓解结构的示意图；
图5是本公开的实施例提供的一种掩膜组件的示意图。
具体实施方式
下面结合附图和实施例，对本公开的具体实施方式作进一步详细描述。以下实施例用于说明本公开，但不用来限制本公开的范围。
本公开的实施例提供了一种掩膜板，该掩膜板包括至少一个掩膜单元，所述掩膜单元包括蒸镀有效区以及位于所述蒸镀有效区与所述掩膜板的第一边沿之间的边缘区域，所述边缘区域上设置有弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述第一边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲(即减小蒸镀有效区的边缘卷曲程度)。
本公开的实施例提供的掩膜板，通过在掩膜板上设置弯曲缓解结构，当该掩膜板因被焊接在框架上而被拉伸时，通过弯曲缓解结构可以有效缓解掩膜板上蒸镀有效区的边缘卷曲，避免在蒸镀过程中在蒸镀的产品的对应位置上产生不良。
例如，可以在掩膜板的上述边缘区域设置一个或多个条状结构作为弯曲缓解结构，并且该条状结构的延伸方向与第一边沿的延伸方向不平行，当该掩膜板按照第一边沿的延伸方向被拉伸时，该条状结构会产生弯曲变形，使蒸镀有效区产生向外的拉伸效果，进而缓解蒸镀有效区边缘的卷曲状态。可选地，该条状结构的延伸方向与所述第一边沿的延伸方向垂直。
参见图1，图1是本公开的实施例提供的一种掩膜板的示意图，该掩膜板的形状为矩形，其包括两条第一边沿1a和两条第二边沿1b，其上设置有多个掩膜单元(例如，FMM Sheet Cell)100，该多个掩膜单元按照第一边沿1a的延伸方向排列，其中，每一个掩膜单元100包括蒸镀有效区110以及位于蒸镀有效区110与掩膜板的第一边沿1a之间的边缘区域，该边缘区域上设置有弯曲缓解结构120，该弯曲缓解结构120用于当掩膜板按照所述第一边沿1a的延伸方向被拉伸时缓解蒸镀有效区的边缘卷曲。
参见图2，图2是图1中虚线框内的结构的放大示意图，其中，每 一个弯曲缓解结构120包括第二条状结构121以及与第二条状结构121相交叉的第一条状结构122，且第一条状结构122的延伸方向与第一边沿1a的延伸方向不平行；
图3a示出了在未设置弯曲缓解结构时掩膜板被拉伸时的状态，当掩膜板沿图中的箭头方向被拉伸时，拉伸力F和F’按照第一边沿1a的延伸方向作用在掩膜板的两端，在掩模单元100上产生使蒸镀有效区110内缩的力f’。当设置了弯曲缓解结构后，如图3b所示，当该掩膜板按照第一边沿1a的延伸方向被拉伸时，拉伸力F和F’通过第二条状结构121进行传动，带动第一条状结构122进行形变，第一条状结构122的弯曲变形，会带动掩膜单元边缘区域的外边沿向内收缩，所以产生力f和f’，由于弯曲缓解结构120与掩膜单元的蒸镀有效区110是相互连接的，所以内缩的力f会通过相互作用力使蒸镀有效区110产生向外的拉伸效果，抵消使蒸镀有效区110内缩的力，进而缓解蒸镀有效区110边缘的卷曲状态；
可选地，在上述的弯曲缓解结构120中，第一条状结构122的延伸方向与第一边沿1a的延伸方向垂直，第二条状结构121的延伸方向与第一边沿1a的延伸方向平行，即第一条状结构122与第二条状结构121可以垂直设置，以提高缓解蒸镀有效区边缘卷曲的效果，另外，还可以如图2所示，每一个弯曲缓解结构120可以包括多个第一条状结构122。
可选地，相邻两个第一条状结构之间的距离随着边缘区域所承受的拉力的增大而减小。也就是说，在边缘区域所承受的拉力较大的地方，掩膜板将经历更大的卷曲，因此在该位置设置较多的第一条状结构，即第一条状结构的密度较大，而在边缘区域所承受的拉力较小的地方，设置相对少的第一条状结构，从而使弯曲缓解结构在边缘区域的边缘卷曲缓解效果更均匀。相邻两个第一条状结构之间的距离的变化可以是随边缘区域所承受的拉力的变化线性的变化，或者也可以为简单的跳跃性改变。
可选地，在同一个掩膜单元中，所述边缘区域包括在所述第一边沿的延伸方向上相邻的第一区域和第二区域，所述第一区域与所述蒸镀有效区中心的距离大于所述第二区域与所述蒸镀有效区中心的距离，在所述第一区域上相邻两个第一条状结构之间的距离大于在所述第二区域上相邻两个第一条状结构之间的距离，即对于同一个掩膜单元，可以在其中边缘区域的中间部分(即边缘区域上距离蒸镀有效区中心较近的部分)设置较多的第一条状结构，从而在该位置上提高缓解边缘卷曲的效果，使该位置上边缘卷曲缓解效果更为突出，这样有利于提高整个边缘区域的边缘卷曲缓解效果。
另外，每一个弯曲缓解结构120也可以只包括第一条状结构122，而不设置第二条状结构121，从而相应的降低弯曲缓解结构的制作难度。
为进一步地提高缓解蒸镀有效区边缘卷曲的效果，每一个掩膜单元100可以包括多个弯曲缓解结构120，每一个掩膜单元中弯曲缓解结构的个数可以根据其上蒸镀有效区边缘卷曲的程度进行设置，例如，可以在每一个掩膜单元中蒸镀有效区域的两侧各设置一个弯曲缓解结构，也可以如图1所示，在每一个掩膜单元中的蒸镀有效区域的两侧各设置两个弯曲缓解结构。
本公开的实施例提供的掩膜板，通过在其上设置弯曲缓解结构，该弯曲缓解结构包括第二条状结构以及与第二条状结构相交叉的第一条状结构，在拉伸的过程中，通过第二条状结构传输拉伸力，使第一条状结构产生弯曲，带动掩膜单元的边缘区域的外边界向内移动，进而产生内缩的趋势，在内缩的过程中，会带动掩膜单元的蒸镀有效区向外拉伸，从而缓解蒸镀有效区边缘的卷曲状态，避免在蒸镀过程中在蒸镀的产品的对应位置上产生不良。
为形成上述的弯曲缓解结构，可以对现有的掩膜板的边缘区域进行刻蚀，通过刻蚀工艺形成上述的弯曲缓解结构，弯曲缓解结构与掩膜单元的蒸镀有效区具有的结构的材料为相同材料；
例如，可以对掩膜板的边缘区域进行半刻蚀(Half Etching)，在经过半刻蚀工艺后，弯曲缓解结构为形成的边缘区域的凸起结构，弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度，即弯曲缓解结构的表面高度高于其周边区域的表面高度；
可选地，还可以对弯曲缓解结构的周边进行全刻蚀(Full Etching)，即使弯曲缓解结构的周边为镂空区域，其结构如图4所示，从而使弯曲缓解结构的第一条状结构122获取更大的弯曲效果，对掩膜板的蒸镀有效区产生更大的拉伸作用，进而更好的缓解蒸镀有效区边缘的卷曲状态。
替代地，可以通过贴附工艺在所述边缘区域上形成所述弯曲缓解结构的图案，例如形成弯曲缓解结构的材料在边缘区域处被贴附在掩膜板的下面，即掩膜板的蒸镀面上，由此形成凸起于掩膜板的平面的弯曲缓解结构。在这种情况下，弯曲缓解结构可以与掩膜单元的蒸镀有效区具有的结构的材料为相同材料或不同的材料。除了采用凸起型结构，弯曲缓解结构也可以形成凹入部，只要弯曲缓解结构的形状被设计为使得在拉伸的过程中会带动掩膜单元的蒸镀有效区向外拉伸，例如弯曲缓解结构可以被构造为形成椭圆形(或橄榄球状)区域，椭圆形的长轴沿掩膜板被拉伸的方向，在椭圆形区域内形成相对于外部内凹的凹入部，这样在拉伸的过程中，由于弯曲缓解结构与掩膜单元的结合，会带动掩膜单元的蒸镀有效区向外拉伸，从而缓解蒸镀有效区边缘的卷曲状态，避免在蒸镀过程中在蒸镀的产品的对应位置上产生不良。
此外，本公开的实施例还提供了一种掩膜组件，包括框架以及上述的掩膜板，所述掩膜板安装在所述框架上并被配置为在所述第一边沿的延伸方向上被拉伸。
参见图5，图5是本公开的实施例提供的一种掩膜组件的示意图，该掩膜组件包括框架2以及多个掩膜板1，掩膜板1被焊接在框架2 上并在框架2的作用下处于被拉伸的状态，其中，掩膜板1可以为上述结构的掩膜板，从而可以有效缓解掩膜板上蒸镀有效区的边缘卷曲，避免在蒸镀过程中在蒸镀的产品的对应位置上产生不良。
此外，本公开的实施例还提供了一种掩膜板的制作方法，包括形成至少一个掩膜单元，所述掩膜单元包括蒸镀有效区以及位于所述蒸镀有效区与所述掩膜板第一边沿之间的边缘区域，还包括在所述边缘区域上形成弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述第一边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲。
例如，所述在所述边缘区域上形成弯曲缓解结构包括：
通过半刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度。
例如，所述在所述边缘区域上形成弯曲缓解结构包括：
通过全刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为镂空区域。
以上实施例仅用于说明本公开，而并非对本公开的限制，有关技术领域的普通技术人员，在不脱离本公开的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本公开的范畴，本公开的专利保护范围应由权利要求限定。

Claims (18)

  1. 一种掩膜板，包括蒸镀有效区和位于所述蒸镀有效区的沿拉伸方向延伸的边沿与所述掩膜板的沿拉伸方向延伸的边沿之间的边缘区域，其中，所述边缘区域上设置有弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲。
  2. 根据权利要求1所述的掩膜板，其中，所述弯曲缓解结构包括第一条状结构，且所述第一条状结构的延伸方向与所述边沿的延伸方向不平行。
  3. 根据权利要求2所述的掩膜板，其中，所述第一条状结构的延伸方向与所述边沿的延伸方向垂直。
  4. 根据权利要求2所述的掩膜板，其中，所述弯曲缓解结构还包括与所述第一条状结构相交叉的第二条状结构。
  5. 根据权利要求4所述的掩膜板，其中，所述第二条状结构的延伸方向与所述边沿的延伸方向平行。
  6. 根据权利要求5所述的掩膜板，其中，所述弯曲缓解结构包括多个所述第一条状结构。
  7. 根据权利要求6所述的掩膜板，其中，相邻两个第一条状结构之间的距离随着边缘区域所承受的拉力的增大而减小。
  8. 根据权利要求6所述的掩膜板，其中，所述边缘区域包括在所述边沿的延伸方向上相邻的第一区域和第二区域，所述第一区域与所述蒸镀有效区中心的距离大于所述第二区域与所述蒸镀有效区中心的距离，在所述第一区域上相邻两个第一条状结构之间的距离大于在所述第二区域上相邻两个第一条状结构之间的距离。
  9. 根据权利要求4所述的掩膜板，其中，所述掩膜板包括多个掩膜单元，每一个掩膜单元包括多个所述弯曲缓解结构。
  10. 根据权利要求4所述的掩膜板，其中，所述弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度。
  11. 根据权利要求4所述的掩膜板，其中，所述弯曲缓解结构的周边为镂空区域。
  12. 根据权利要求1所述的掩膜板，其中，所述掩膜板包括多个掩膜单元，所述多个掩膜单元按照所述边沿的延伸方向排列。
  13. 根据权利要求1-12中任一项所述的掩膜板，其中，所述弯曲缓解结构与所述掩膜板的蒸镀有效区为相同材料。
  14. 一种掩膜组件，其中，包括框架和权利要求1-13中任一项所述的掩膜板，所述掩膜板安装在所述框架上并被配置为在所述边沿的延伸方向上被拉伸。
  15. 一种掩膜板的制作方法，所述掩膜板包括蒸镀有效区和位于所述蒸镀有效区与所述掩膜板的边沿之间的边缘区域，其中，还包括在所述边缘区域上形成弯曲缓解结构，所述弯曲缓解结构用于当所述掩膜板按照所述边沿的延伸方向被拉伸时缓解所述蒸镀有效区的边缘卷曲。
  16. 根据权利要求15所述的掩膜板的制作方法，其中，所述在所述边缘区域上形成弯曲缓解结构包括：
    通过半刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为非镂空区域，所述非镂空区域的厚度小于所述弯曲缓解结构的厚度。
  17. 根据权利要求15所述的掩膜板的制作方法，其中，所述在所述边缘区域上形成弯曲缓解结构包括：
    通过全刻蚀工艺在所述边缘区域上形成所述弯曲缓解结构的图案，所述弯曲缓解结构的周边为镂空区域。
  18. 根据权利要求15所述的掩膜板的制作方法，其中，所述在所述边缘区域上形成弯曲缓解结构包括：
    通过贴附工艺在所述边缘区域上形成所述弯曲缓解结构的图案。
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