WO2018003603A1 - ペリクル膜、ペリクル枠体、ペリクル、及びその製造方法 - Google Patents
ペリクル膜、ペリクル枠体、ペリクル、及びその製造方法 Download PDFInfo
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- WO2018003603A1 WO2018003603A1 PCT/JP2017/022688 JP2017022688W WO2018003603A1 WO 2018003603 A1 WO2018003603 A1 WO 2018003603A1 JP 2017022688 W JP2017022688 W JP 2017022688W WO 2018003603 A1 WO2018003603 A1 WO 2018003603A1
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- pellicle
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- frame
- pellicle film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
Definitions
- the present invention relates to a pellicle film, a pellicle frame, a pellicle, and a manufacturing method thereof, which are used for a photolithography mask.
- the present invention relates to a pellicle film, a pellicle frame, a pellicle, and a method for manufacturing the same, which are extremely thin films for extreme ultraviolet (EUV) lithography.
- EUV extreme ultraviolet
- a pellicle In the photolithography process, a pellicle is used in which a pellicle film is stretched on one end of a frame that surrounds the mask pattern in order to prevent dust or the like from adhering to the mask or reticle.
- the pellicle is used to protect the photomask from foreign matters such as dust, if dust or the like adheres to the manufactured pellicle, there is no point in using the pellicle in the first place. Therefore, a pellicle that reduces adhesion of dust and the like and a method for manufacturing the pellicle are now eagerly desired.
- EUV light refers to light having a wavelength in the soft X-ray region or vacuum ultraviolet region, and refers to light having a wavelength of about 13.5 nm ⁇ 0.3 nm.
- the resolution limit of a pattern is about 1/2 of the exposure wavelength, and it is said to be about 1/4 of the exposure wavelength even when the immersion method is used.
- the immersion of ArF laser (wavelength: 193 nm) Even if the method is used, the exposure wavelength is expected to be about 45 nm. Therefore, EUV lithography is expected as an innovative technology that can be greatly miniaturized from conventional lithography.
- the pellicle film to be arranged on the pellicle needs to be an unprecedented nanometer order film especially in the case of an EUV pellicle.
- Patent Document 1 A method for manufacturing an EUV pellicle that requires the use of such an extremely thin film is disclosed in Patent Document 1, in which the pellicle film is first formed on a substrate such as a silicon substrate by CVD, sputtering, or other film formation methods. After the film formation, the substrate is generally obtained by removing only the substrate by etching or the like leaving a surrounding frame-like region (back etching).
- Patent Document 2 At least one vent hole is formed in the pellicle frame, and a filter member that prevents passage of dust or the like is dropped into the vent hole in a space surrounded by the frame member, the mask substrate, and the pellicle film.
- a pellicle provided so as not to be described is described.
- this invention does not relate to an EUV pellicle, and is not sufficient from the viewpoint of reducing dust.
- JP 2013-004893 A Japanese Utility Model Publication No. 63-39703
- An object of the present invention is to provide an EUV pellicle film, a pellicle frame, a pellicle, and a method for manufacturing the same, in which adhesion of dust and the like is reduced.
- a pellicle film is formed on the substrate, a metal mask is formed on the surface of the substrate opposite to the surface on which the pellicle film is formed, and a part of the substrate is formed from the metal mask side.
- a method for manufacturing a pellicle is provided that removes and removes the metal mask.
- the method may further include forming a surface metal coat layer between the substrate and the pellicle film.
- the metal mask may be chrome.
- the surface metal coat layer may be ruthenium.
- the step of removing a part of the substrate may be a wet etching step.
- At least particles adhering to the pellicle film surface may be removed before removing a part of the substrate.
- the edge of the substrate may be chamfered before removing a portion of the substrate.
- holes may be formed in at least the substrate before removing the particles.
- holes may be formed in at least the pellicle film and the substrate before removing the particles.
- holes may be formed at least in the pellicle membrane before removing the particles.
- the step of removing a part of the substrate is a wet etching step, and the hole may be provided by the wet etching step.
- trimming may be performed using an ultrashort pulse laser.
- the pellicle film has a first frame body, the pellicle film is stretched over the first frame body, and the first frame body has a thickness of 0 ⁇ m or more and 0.5 ⁇ m or less.
- a pellicle frame characterized by having a portion.
- a surface metal coat layer may be provided between the pellicle film and the first frame.
- the end portion of the first frame may be R-face processed.
- the end of the first frame may have at least one curved portion.
- a pellicle film and a first frame body are provided, the pellicle film is stretched around the first frame body, and the end of the first frame body is processed into a C surface.
- the first frame may have an inclined surface at an end, and an angle formed by the upper surface of the first frame and the inclined surface may be 100 degrees or more and 170 degrees or less.
- the pellicle frame may be connected to the second frame, and the end of the second frame may be R-face processed. That is, you may have a curved part in the edge part of a 2nd frame.
- the present invention can provide an EUV pellicle film, a pellicle frame, a pellicle, and a method for manufacturing the same, in which adhesion of dust and the like is reduced.
- FIG. 4 is a flowchart according to a method for manufacturing a pellicle film, a pellicle frame, and a pellicle according to an embodiment of the present invention. It is a mimetic diagram (sectional view) showing a manufacturing process of a pellicle film, a pellicle frame, and a pellicle according to an embodiment of the present invention. It is a mimetic diagram (sectional view) showing a manufacturing process of a pellicle film, a pellicle frame, and a pellicle according to an embodiment of the present invention.
- 4 is a flowchart according to a method for manufacturing a pellicle film, a pellicle frame, and a pellicle according to an embodiment of the present invention.
- It is a mimetic diagram (sectional view) showing a manufacturing process of a pellicle film, a pellicle frame, and a pellicle according to an embodiment of the present invention.
- the pellicle film means a thin film used for the pellicle.
- the pellicle frame means a pellicle film having a first frame connected thereto.
- the pellicle means a pellicle frame that is connected to a second frame.
- Trimming is to cut the substrate or the substrate and the pellicle film formed thereon according to the shape of the desired pellicle. Since the shape of the pellicle is mostly rectangular, this specification shows an example of cutting into a rectangular shape as a specific example of trimming.
- back etching the process of removing a part of the substrate while leaving the pellicle film.
- back etching etching from the back surface (the surface on the opposite side of the substrate where the pellicle film is formed) is shown.
- the end refers to side surfaces, corners, and corners.
- the side surface of the substrate (or the first frame when the substrate is used as the first frame) and the substrate (or the first frame when the substrate is used as the first frame). 1 frame) includes a corner portion formed by the side surface and the side surface, a corner portion formed by the upper surface of the substrate (the surface in contact with the pellicle film) and the side surface, and a point where the upper surface of the substrate intersects the two side surfaces. And a corner that is a region.
- the pellicle to be manufactured by the method for manufacturing a pellicle according to the present invention is a pellicle for photolithography.
- a substrate 100 For example, a silicon wafer
- a CVD method Chemical Vapor Deposition
- PE-CVD film formation for example, PE-CVD film formation, etc.
- a sputter film formation method is used.
- a pellicle film 102 is formed (FIG. 1B).
- a part of the substrate is removed while leaving the pellicle film 102 in the exposure area.
- back etching is used as a method for removing a part of the substrate. As described above, the back etching is etching from the back surface (the surface of the substrate opposite to the surface on which the pellicle film is formed).
- a SiN (silicon nitride) mask 104 is provided on the surface (back surface) opposite to the surface on which the pellicle film is formed. Can be considered.
- the ridge portion 120 of the SiN mask 104 is easily broken, and it causes a foreign matter by being broken.
- the pellicle film and the flange 120 are the same substance, and therefore the cause of foreign matters without affecting the pellicle film Therefore, it is difficult to remove only the flange 120 that is to be removed by etching or the like.
- the portion remaining in the hook shape is hereinafter referred to as a hook portion.
- a metal for example, chromium (Cr)
- Cr chromium
- the mask is removed without affecting the substrate 200 and the pellicle film 202 by using a mask having an etching rate significantly different from the constituent components of the pellicle film 202 instead of the SiN mask 104.
- the mask does not remain in a hook shape and become a buttock. As a result, it is possible to prevent the generation of dust such that the SiN mask 104 remaining in the bowl shape is broken.
- FIG. 2 is a flowchart showing a method for manufacturing a pellicle according to this embodiment.
- a method for manufacturing a pellicle film and a pellicle frame according to the present invention will be described with reference to FIG.
- a pellicle film 202 is formed on one surface of a substrate 200 (silicon wafer or the like) (S101), and a metal on the surface (back surface) opposite to the surface on which the pellicle film 202 is formed on the substrate 200.
- a mask 204 is formed (S103).
- the substrate 200 may not be a silicon wafer substrate.
- the shape of the substrate is not limited to a perfect circle, and an orientation flat, a notch or the like may be formed. Further, the pellicle film may not be formed on the entire substrate.
- the substrate 200 on which the pellicle film is formed it is preferable to use a material containing at least one of silicon, sapphire, and silicon carbide. Silicon that is relatively easy to increase in area is more preferable.
- the pellicle film 202 is a SiN, a carbon-based film (for example, a graphene film, a carbon nanotube film formed by a spin coating method, a carbon nanosheet, etc.), polysilicon, or a stacked structure in which a plurality of these layers are stacked. Preferably there is.
- a laminated structure having a three-layer structure of a first SiN (silicon nitride) layer, a polysilicon layer, and a second SiN (silicon nitride) layer, and a carbon-based film are particularly preferable.
- the film thickness of the pellicle film 202 is about 10 nm or more and 100 nm or less, preferably 20 nm or more and 60 nm or less, because it is necessary to transmit EUV.
- the first silicon nitride layer has a polysilicon layer of 1 nm to 5 nm. 30 nm to 60 nm, and the second silicon nitride layer can be formed to 1 nm to 5 nm.
- the first silicon nitride layer is formed with a thickness of 1.5 nm to 3 nm
- the polysilicon layer is formed with a thickness of 30 nm to 50 nm
- the second silicon nitride layer is formed with a thickness of 1.5 nm to 3 nm.
- the metal mask 204 for example, chromium (Cr), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tungsten (W), molybdenum (Mo), iron (Fe), stainless steel, etc.
- the pellicle film 202 is once formed on both surfaces of the substrate 200, the pellicle film 202 on one side is removed, and then a metal mask 204 is formed, and a portion of the metal mask 204 necessary as a mask is formed. Other than the above may be removed.
- a part of the substrate is removed (back etching) from the back surface, that is, the metal mask forming surface side until the pellicle film 202 is exposed (S105, FIG. 4A).
- a silicon wafer other than the exposure area may be left in a frame shape for the purpose of simultaneously forming the first frame 207 connected to the pellicle film 202. That is, in this case, the portion of the substrate that has not been removed becomes the first frame 207.
- the back etching is performed using an etchant (first etching agent) that dissolves the substrate because the pellicle film and the metal mask are difficult to dissolve.
- the substance used as the etchant (first etchant) is selected according to the materials of the substrate, pellicle film, and metal mask. Examples include potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH), but are not limited thereto.
- the shape of the frame There is no particular limitation on the shape of the frame. From the viewpoint of increasing the strength, it can be said that a larger number of substrates are left as a frame. Before the etching, the etching may be performed in a state where another frame is attached to the portion to be the frame. By attaching another frame, the frame can be reinforced. As another frame, for example, the second frame 208 may be used. Note that the second frame 208 may be further connected in addition to the first frame 207 in a later step. However, since the pellicle for EUV is limited in the height of the pellicle, the total height of the pellicle film and the frame is preferably 2 mm or less. A jig hole may be provided in the second frame 208 to be connected separately.
- a pellicle is manufactured by connecting the pellicle frame (the pellicle film connected to the first frame) to the second frame (FIG. 4C). Further, the pellicle frame (the pellicle film connected to the first frame) and the second frame may be connected by pins. That is, pin holes may be provided on corners or sides of the pellicle frame body, pin holes may be provided at portions of the second frame body that overlap the pin holes, and these may be connected by pins.
- a step of removing particles may be included.
- the method for removing particles include a wet cleaning method, a mechanical cleaning method, and a dry cleaning method, but are not limited thereto.
- the wet cleaning method include RCA cleaning such as SC1 cleaning and SC2 cleaning.
- SC1 cleaning has a particle cleaning action with ammonia and hydrogen peroxide
- SC2 cleaning has a heavy metal cleaning action with hydrochloric acid and hydrogen peroxide.
- cleaning with pure water or cleaning with an organic solvent is possible.
- cleaning with sulfuric acid / hydrogen peroxide mixture of sulfuric acid and hydrogen peroxide
- buffered hydrofluoric acid mixture of hydrofluoric acid and ammonium fluoride
- hydrofluoric acid or the like is possible.
- brush cleaning, rocking cleaning, ultrasonic cleaning, or high pressure injection of an aerosol such as argon may be used.
- As the dry cleaning method ashing cleaning, there is argon sputtering using 0 2 plasma.
- the material used as the metal mask remover (second etchant) is selected according to the material of the substrate, pellicle film, and metal mask.
- the pellicle film is SiN
- the metal mask is chromium
- cerium ammonium nitrate it is preferable to use cerium ammonium nitrate as a remover (second etchant) of the metal mask.
- the following table shows combinations of preferable pellicle film 202, metal mask 204, etchant (first etching material), and remover (second etching agent).
- a pellicle film and a pellicle frame body having a mask wrinkle length of 0.5 ⁇ m or less, preferably 0.01 ⁇ m or less, more preferably wrinkle-free (0 ⁇ m) can be manufactured, and dust is reduced.
- a pellicle film, a pellicle frame, and a pellicle can be provided. If it is within the numerical value range of the length of the wrinkles, when used as an EUV pellicle, it does not affect the photolithography drawing.
- chamfering may be performed at at least one location of the substrate, the first frame, and the second frame.
- the chamfering is a concept including R surface processing and C surface processing.
- R-surface processing is processing a substrate, a first frame (including a back-etched substrate), and at least one end (referring to a side surface, corner, corner, or the like) of a second frame. It means to form a curved part.
- the C-plane processing means that the at least one end portion is cut obliquely (100 degrees to 170 degrees). By performing such processing, a sharp portion (acute angle portion) is removed, and even if it collides with any member during transportation or handling after manufacture, it becomes difficult for fragments to come out.
- FIG. 5 is a view in which holes 230 are formed in four directions of the substrate.
- 5A is a top view
- FIGS. 5B and 5C are cross-sectional views taken along the line A-A ′ of FIG. 5A.
- one or more holes 230 may be formed in the pellicle film 202 on the formed substrate 200. The hole does not need to penetrate the substrate as shown in FIG. Of course, as shown in FIG.5 (c), you may penetrate a board
- the holes may be formed in the pellicle film and the substrate.
- FIG. 9A and 9B show a diagram in which the hole 230 is closed by the plug 240 as an example of protecting the hole.
- a film resist can be used as the plug 240. The hole 230 can be prevented by the plug 240 by applying a film resist, making the plug 240 a necessary part, and melting the unnecessary part.
- the size of the hole 230 is not limited, for example, if the hole has a substantially circular shape, a hole having a diameter of about 50 ⁇ m to 2000 ⁇ m is formed. Preferably, a hole having a diameter of about 200 ⁇ m to 700 ⁇ m is formed.
- the shape of the hole 230 is not particularly limited, and may be a polygon (for example, a substantially square shape). In the case of a substantially square shape, the length of one side is not limited, but a hole having a long side length of 100 ⁇ m to 3000 ⁇ m and a short side length of 50 ⁇ m to 1000 ⁇ m can be formed.
- the length is preferably 150 ⁇ m or more and 2000 ⁇ m or less, and the short side length is preferably 100 ⁇ m or more and 700 ⁇ m or less.
- the hole 230 may be arranged on the side surface side of the pellicle, but the position where the hole is provided is not limited.
- the hole 230 can be used as a jig hole or a vent when attaching or demounting the pellicle film to the photomask, but the hole is not an essential component of the pellicle.
- the holes 230 are formed by an ultrashort pulse laser, other lasers, etching, or the like.
- an ultrashort pulse laser for example, a picosecond laser or nanosecond laser
- the hole 230 when the hole 230 is formed before the back etching of the substrate, it is preferable to provide a step of protecting the hole 230 because the hole is widened by the etching.
- a step of protecting the hole 230 it is more preferable to form a metal mask according to the present disclosure on the inner wall of the hole 230.
- FIGS. 9C and 9D show the metal mask 204 formed on the inner wall of the hole 230 as an example of protecting the hole.
- the conditions for using a nanosecond laser can be a repetition frequency of 5 kHz to 15 kHz, a pulse energy of 5 W to 15 W, a scan of 5 mm to 30 mm, a scan frequency of 40 mm to 300 mm, It is not limited to.
- a dross adhesion preventing agent for laser may be used.
- the anti-drossing agent may include applying a chemical such as CBX in which micrographite is mixed with isopropyl alcohol (IPA) on the substrate before forming the hole, but is not limited thereto. Absent.
- the dross adhesion preventing agent is used, it is removed by washing after the formation of the holes.
- dross adhesion preventing method for example, dross adhesion can be suppressed by performing laser processing while spraying helium gas on a processing substrate.
- the hole 230 may be provided in the substrate in advance before forming the pellicle film.
- the hole may be formed by using the laser as described above, or wet etching may be used.
- wet etching for example, a SiO 2 layer is formed as a mask on the substrate, holes are exposed and patterned in the SiO 2 layer by general exposure, and then the substrate is etched using the SiO 2 layer as a mask. Holes can be formed by removing the two layers.
- the cleanliness corresponding to the initial cleanliness of the Si substrate can be restored by polishing and cleaning both surfaces of the substrate after the hole 230 has been processed.
- the completed pellicle film can be made into a good film with few defects such as pinholes.
- FIG. 10A and 10B show a diagram in which the pellicle film 202 is formed on the inner wall of the hole 230 as an example of protecting the hole.
- the pellicle film 202 formed on the inner wall in FIG. 10B can be used as a mask.
- an adhesive sheet 212 that is stretchable and decreases in adhesive strength when subjected to external stimulus is attached to both sides of the substrate. Trimming may be performed by making a bridge 224 inside the substrate where the adhesive sheet is pasted, and then making a notch in the bridge 224. In the present invention, only the substrate may be trimmed, or the pellicle film formed on the substrate may be trimmed together with the substrate.
- trimming for example, trimming into a rectangular shape is conceivable, but the trimming shape is not limited and can be processed into an arbitrary shape.
- the trimming method there is no limitation on the trimming method.
- there are methods that mechanically apply force to cut the pellicle film and substrate laser cutting, laser half cutting (stealth dicing), blade dicing, sand blasting, crystal anisotropic etching, and dry etching. it can.
- cleaning cannot be performed after the back etching because the pellicle film is extremely thin, if the dust generation process such as the trimming process is performed before the back etching, the cleaning can be performed before the back etching. Fewer pellicle films, pellicle frames, and pellicles can be manufactured.
- the emissivity of a substance is a film
- the relationship is almost proportional to the thickness. Therefore, when the film thickness is thin, the emissivity is usually low.
- some metal materials have locally improved emissivity where they are very thin. For example, in both ruthenium (Ru) and gold (Au), the emissivity is locally improved in a portion where the film thickness is very thin.
- the numerical values of the emissivity of ruthenium (Ru) and gold (Au) are different, it is possible to select a material suitable for the required performance of heat dissipation.
- a surface metal coat layer 309 may be provided between the substrate 200 and the pellicle film 202 (FIG. 6 (S201)).
- S201 the pellicle film 202
- the surface metal coat layer 309 it is possible to dissipate heat so that the pellicle film is not damaged even when high light energy is applied to the pellicle film.
- 7 and 8 are cross-sectional views of schematic views showing a manufacturing method when the surface metal coat layer 309 is used.
- the material which can be used for the surface metal coat layer 309 needs to satisfy the following conditions.
- the emissivity of the thin film is high, the EUV transmittance is high, and it is difficult to etch the remover (second etchant) as a mask material removing material.
- the remover second etchant
- ruthenium is preferable. Since it is difficult to etch the remover (second etchant) as the mask material removing material, no saddle-shaped mask remains even when combined with the manufacturing method described in the first embodiment.
- the surface metal coat layer 309 is ruthenium (Ru)
- the pellicle film is a silicon nitride (SiN) film
- the first SiN layer and the poly A layered structure having a three-layer structure of a silicon layer and a second SiN layer, or a carbon-based film
- a remover (second etching agent) as a removal material for Cr as a mask material and chromium as a mask material ) Is ceric ammonium nitrate, hydrochloric acid, or hydrochloric acid and nitric acid.
- the carbon-based film is difficult to be etched by a metal mask removing material such as ceric ammonium nitrate, as is the case with the silicon nitride (SiN) system.
- an 8-inch silicon wafer having a thickness of 725 ⁇ m was used as a substrate.
- the film on one surface of the silicon wafer substrate is removed by dry etching, and a Cr film is sputtered as a metal mask on the surface (the surface opposite to the surface on which the pellicle film of the silicon wafer is formed). Formed.
- predetermined patterning was performed to remove the portion of the Cr film to be back etched.
- the silicon wafer substrate was trimmed into a rectangle having a pellicle size shape, and the side surface was chamfered (beveled) to round the corners.
- the substrate was cleaned.
- physical cleaning rubbing
- chemical cleaning oxidation and oxide layer removal
- the silicon wafer in the portion where the pellicle film is to be formed was removed by back etching. At this time, the silicon wafer was not completely removed, and a part of the silicon wafer was left for use as a frame. At this time, an eaves portion was formed in Cr as an etching mask.
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Abstract
Description
本明細書において、ある部材又は領域が、他の部材又は領域の「上に(又は下に)」あるとする場合、特段の限定がない限り、これは他の部材又は領域の直上(又は直下)にある場合のみでなく、他の部材又は領域の上方(又は下方)にある場合を含み、すなわち、他の部材又は領域の上方(又は下方)において間に別の構成要素が含まれている場合も含む。
本発明に係るペリクルの製造方法によって製造しようとするペリクルとは、フォトリソグラフィ用ペリクルである。まず、基板100(図1(a)。たとえばシリコンウェハ)上に、CVD法(Chemical Vapor Deposition)(たとえば、LP-CVD成膜、PE-CVD成膜など)やスパッタ製膜等の方法によって、ペリクル膜102を形成する(図1(b))。
本発明では、バックエッチング用のマスク材料をSiNマスク104ではなく金属(たとえば、クロム(Cr)等)を用いて、バックエッチング後に金属マスク204を除去する。本発明によれば、SiNマスク104ではなく、ペリクル膜202の構成成分と有意にエッチングレートが異なるマスクを用いることによって、基板200にもペリクル膜202にも影響を与えずにマスクを除去することが可能になり、マスクが庇状に残って庇部となってしまうことがない。結果として、庇状に残ったSiNマスク104が折れて発生するような粉塵の発生を防ぐことが可能となる。
通常、物質の輻射率(物体が熱放射で放出する光のエネルギー(放射輝度)を、同温の黒体が放出する光(黒体放射)のエネルギーを1としたときの比)は、膜厚にほぼ比例する関係にある。したがって、膜厚が薄い場合、通常であれば輻射率は低い。しかし、金属材料の一部には、非常に薄いところで局所的に輻射率が向上するものがある。たとえば、ルテニウム(Ru)と金(Au)では両者とも膜厚が非常に薄い部分においては局所的に輻射率が向上する。もっとも、ルテニウム(Ru)と金(Au)の輻射率の数値自体は異なるため、放熱の要求性能によって適した材料を選択することが可能である。
100、200 基板
102、202 ペリクル膜
104 SiNマスク
120 庇部
204 金属マスク
207 第1の枠体
208 第2の枠体
212 粘着シート
224 ブリッジ
230 孔
240 栓
309 表面金属コート層
Claims (8)
- 基板上にペリクル膜を形成し、
前記基板の前記ペリクル膜が形成された面とは反対側の面に金属マスクを形成し、
前記金属マスク側から前記基板の一部を除去し、
前記金属マスクを除去する、
ペリクルの製造方法。 - 前記基板と前記ペリクル膜との間に、表面金属コート層を形成することをさらに含む、
請求項1に記載のペリクルの製造方法。 - 前記金属マスクがクロムである、
請求項1に記載のペリクルの製造方法。 - 前記表面金属コート層がルテニウムである、
請求項2に記載のペリクルの製造方法。 - 前記基板の一部を除去する工程はウェットエッチング工程である、
請求項1に記載のペリクルの製造方法。 - ペリクル膜と第1の枠体とを有し、
前記ペリクル膜は前記第1の枠体に張架され、
前記第1の枠体は、0μm以上0.5μm以下の庇部を有することを特徴とする
ペリクル枠体。 - 前記ペリクル膜と前記第1の枠体との間に表面金属コート層を有する、
請求項6に記載のペリクル枠体。 - 請求項6のペリクル枠体に第2の枠体を接続したペリクル。
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SG11201811360UA SG11201811360UA (en) | 2016-06-28 | 2017-06-20 | Pellicle film, pellicle frame body, pellicle, and method for producing the same |
KR1020187034944A KR102189172B1 (ko) | 2016-06-28 | 2017-06-20 | 펠리클막, 펠리클 프레임체, 펠리클 및 그 제조 방법 |
EP17819962.6A EP3477387A4 (en) | 2016-06-28 | 2017-06-20 | PELLICLE FILM, PELLICLE FRAME BODY, PELLICLE AND METHOD FOR PRODUCING PELLICLES |
JP2018525081A JP6732019B2 (ja) | 2016-06-28 | 2017-06-20 | ペリクル膜、ペリクル枠体、ペリクル、及びその製造方法 |
US16/222,272 US20190121229A1 (en) | 2016-06-28 | 2018-12-17 | Pellicle film, pellicle frame body, pellicle, and method for manufacturing pellicle |
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EP3477387A1 (en) | 2019-05-01 |
TWI731995B (zh) | 2021-07-01 |
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US20190121229A1 (en) | 2019-04-25 |
CN109313385A (zh) | 2019-02-05 |
JP6732019B2 (ja) | 2020-07-29 |
EP3477387A4 (en) | 2020-03-11 |
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