WO2018003590A1 - Composition de résine thermodurcissable, film de résine avec support, carte de circuit imprimé et dispositif à semi-conducteur - Google Patents

Composition de résine thermodurcissable, film de résine avec support, carte de circuit imprimé et dispositif à semi-conducteur Download PDF

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Publication number
WO2018003590A1
WO2018003590A1 PCT/JP2017/022627 JP2017022627W WO2018003590A1 WO 2018003590 A1 WO2018003590 A1 WO 2018003590A1 JP 2017022627 W JP2017022627 W JP 2017022627W WO 2018003590 A1 WO2018003590 A1 WO 2018003590A1
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Prior art keywords
resin composition
thermosetting resin
wiring board
printed wiring
resin
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PCT/JP2017/022627
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English (en)
Japanese (ja)
Inventor
康二 佐藤
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住友ベークライト株式会社
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Priority to JP2018525076A priority Critical patent/JP7028165B2/ja
Publication of WO2018003590A1 publication Critical patent/WO2018003590A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules

Definitions

  • the present invention relates to a thermosetting resin composition, a resin film with a carrier, a printed wiring board, and a semiconductor device.
  • epoxy resin compositions have been developed in various ways from the viewpoint of reducing dimensional changes.
  • an epoxy resin composition described in Patent Document 1 can be cited.
  • the epoxy resin of this epoxy resin composition a bisphenol F type epoxy resin is used (paragraph 0124 of Patent Document 1, Example 2).
  • the present inventor further examined the thermosetting resin composition used for forming the insulating layer in the printed wiring board, and focused on the elastic modulus and the elongation as characteristics related to toughness. As a result of further investigation, it has been found that excellent toughness can be realized by achieving both low elasticity and high elongation. And, by adopting the storage elastic modulus E ′ 30 at 30 ° C. as the elastic modulus index, and adopting the tensile elongation measured by the tensile test as the elongation index, low elasticity and high elongation are obtained. It has been found that it can be evaluated optimally.
  • the storage modulus E '30 of the cured product of the thermosetting resin composition is less than a predetermined value, and, by a tensile elongation greater than or equal to a predetermined value, heat It has been found that the toughness of the cured product of the curable resin composition can be improved, and the present invention has been completed.
  • thermosetting resin composition used for forming an insulating layer in a printed wiring board A thermosetting resin; A curing agent; An inorganic filler,
  • the storage elastic modulus E ′ 30 at 30 ° C. of the cured product is 1 GPa or more and 10 GPa or less
  • a thermosetting resin composition having a tensile elongation of 2% or more is provided.
  • a carrier substrate There is provided a resin film with a carrier comprising: a resin film formed of the thermosetting resin composition provided on the carrier substrate.
  • a printed wiring board provided with an insulating layer composed of a cured product of a resin film of the thermosetting resin composition is provided.
  • the printed wiring board There is provided a semiconductor device comprising a semiconductor element mounted on a circuit layer of the printed wiring board or built in the printed wiring board.
  • thermosetting resin from which an insulating layer having excellent toughness can be obtained a resin film with a carrier using the same, a printed wiring board, and a semiconductor device are provided.
  • FIG. 1 is a cross-sectional view showing an example of the configuration of the resin film with a carrier in the present embodiment.
  • 2A and 2B are cross-sectional views showing an example of the configuration of the printed wiring board in the present embodiment.
  • 3A and 3B are cross-sectional views showing an example of the configuration of the semiconductor device in the present embodiment.
  • 4A to 4C are process cross-sectional views illustrating an example of the manufacturing process of the printed wiring board in the present embodiment.
  • FIG. 5 is a cross-sectional view showing an example of the configuration of the printed wiring board in the present embodiment.
  • FIG. 6 is a cross-sectional view showing an example of the configuration of the printed wiring board in the present embodiment.
  • the thermosetting resin composition of the present embodiment includes a thermosetting resin, a curing agent, and an inorganic filler. Moreover, when the thermosetting resin composition of this embodiment performs dynamic viscoelasticity measurement with respect to the hardened
  • a thermosetting resin composition is used for forming an insulating layer in a printed wiring board.
  • thermosetting resin composition used for forming an insulating layer in a printed wiring board, and has come to focus on storage elastic modulus and tensile elongation as characteristics relating to toughness.
  • a thermosetting resin composition containing a thermosetting resin, a curing agent, and an inorganic filler, it is excellent in achieving both low elasticity and high elongation. It has been found that toughness can be exhibited.
  • thermosetting resin having a large molecular weight per number of functional groups and a flexible skeleton, etc., controls the crosslink density and makes the storage elastic modulus and the tensile elongation rate within a desired numerical range.
  • thermosetting resin composition As a result of intensive studies based on such knowledge, by setting the storage elastic modulus E ′ 30 of the cured product of the thermosetting resin composition to 1 GPa or more and 10 GPa or less and the tensile elongation rate to 2% or more, The present inventors have found that the low elasticity and high elongation of the cured product of the thermosetting resin composition can be compatible and can exhibit excellent toughness, and the present invention has been completed.
  • the insulating layer in the printed wiring board can be used as an insulating member constituting the printed wiring board such as a core layer, a build-up layer (interlayer insulating layer), a solder resist layer, and the like.
  • the printed wiring board includes a core layer, a build-up layer (interlayer insulating layer), a printed wiring board having a solder resist layer, a printed wiring board having no core layer, a coreless board used for a panel package process (PLP), MIS (Molded Interconnect Substrate) substrate and the like.
  • the cured product of the resin film formed with the thermosetting resin composition of this embodiment is used for the insulating layer, for example, a build-up layer, a solder resist layer, or a PLP in a printed wiring board that does not have a core layer. It can also be used for an interlayer insulating layer and a solder resist layer of a coreless substrate, an interlayer insulating layer and a solder resist layer of a MIS substrate, and the like.
  • the cured product of the resin film according to the present embodiment is a large-area printed wiring board used to collectively create a plurality of semiconductor packages. It can also be suitably used for the resist layer.
  • the cured resin film of this embodiment As an insulating layer, it has excellent toughness. Therefore, during panel level processes for manufacturing large panel size packages, panel (coreless substrate) warpage and during transport And substrate cracks during mounting can be suppressed.
  • the cured product of the resin film of the present embodiment it becomes possible to highly fill the inorganic filler in the matrix resin having a flexible skeleton.
  • cured material of the said resin film can be made low, the curvature of the semiconductor package obtained can fully be suppressed.
  • thermosetting resin composition of the present embodiment Each component of the thermosetting resin composition of the present embodiment will be described.
  • thermosetting resin composition of the present embodiment includes, for example, a thermosetting resin, a curing agent, and an inorganic filler.
  • thermosetting resin As a thermosetting resin, an epoxy resin, a maleimide compound, etc. are mentioned, for example. These may be used alone or in combination of two or more.
  • the thermosetting resin preferably contains at least an epoxy resin or a maleimide compound, and particularly preferably contains an epoxy resin.
  • thermosetting resin of the present embodiment is preferably liquid at 25 ° C. room temperature. Thereby, the dispersibility of each component in a thermosetting resin composition can be improved. Moreover, it becomes possible to raise the filling amount of an inorganic filler.
  • the lower limit of the viscosity at 25 ° C. of the thermosetting resin of this embodiment is, for example, 0.1 Pa ⁇ s or more, preferably 0.5 Pa ⁇ s or more, and preferably 1 Pa ⁇ s or more. More preferred. Thereby, the film-forming property of a thermosetting resin composition can be improved.
  • the upper limit of the viscosity at 25 ° C. is, for example, 200 Pa ⁇ s or less, preferably 100 Pa ⁇ s or less, and more preferably 50 Pa ⁇ s or less. Thereby, the dispersibility of a thermosetting resin composition can be improved.
  • the lower limit of the epoxy equivalent of the epoxy resin of the present embodiment is, for example, 300 g / eq or more, preferably 330 g / eq or more, and more preferably 350 g / eq or more.
  • the upper limit value of the epoxy equivalent is not particularly limited, but is, for example, 700 g / eq or less, preferably 600 g / eq or less, and more preferably 500 g / eq or less.
  • cured material of a thermosetting resin composition can be improved.
  • the lower limit of the weight average molecular weight (Mw) of the epoxy resin of the present embodiment is not particularly limited, but is preferably Mw 300 or more, and more preferably Mw 800 or more. It can suppress that a tack
  • the upper limit of Mw is not particularly limited, but is preferably Mw 20,000 or less, and more preferably Mw 15,000 or less. When Mw is not more than the above upper limit value, the handling property is improved and it becomes easy to form a resin film.
  • the Mw of the epoxy resin can be measured by GPC, for example.
  • the epoxy resin of this embodiment is preferably liquid at 25 ° C. room temperature, and preferably contains at least one first epoxy resin having an epoxy equivalent in the above range.
  • the type of the first epoxy resin is not particularly limited, but for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, bisphenol M type epoxy resin, bisphenol P type epoxy Resin, bisphenol type epoxy resin such as bisphenol Z type epoxy resin; phenol novolak type epoxy resin, cresol novolak type epoxy resin, tetraphenol group ethane type novolak type epoxy resin, novolak type epoxy resin having condensed ring aromatic hydrocarbon structure, etc.
  • Novolac-type epoxy resins biphenyl-type epoxy resins; aralkyl-type epoxy resins such as xylylene-type epoxy resins and biphenyl-aralkyl-type epoxy resins; naphthylene ether-type resins Naphthalene-type epoxy resins such as xylene resin, naphthol-type epoxy resin, naphthalenediol-type epoxy resin, bifunctional to tetrafunctional naphthalene-type epoxy resin, binaphthyl-type epoxy resin, naphthalene-aralkyl-type epoxy resin; anthracene-type epoxy resin; phenoxy-type epoxy resin Dicyclopentadiene type epoxy resin; norbornene type epoxy resin; adamantane type epoxy resin; fluorene type epoxy resin; polyether type epoxy resin.
  • aralkyl-type epoxy resins such as xylylene-type epoxy resins and biphenyl-aralkyl-type epoxy resins
  • the first epoxy resins from the viewpoint of viscosity, at least one selected from bisphenol A type epoxy resins, fluorene type epoxy resins, bifunctional naphthalene type epoxy resins, and polyether type epoxy resins can be used.
  • the epoxy resin of the present embodiment in addition to the first epoxy resin, another second epoxy resin may be used in combination.
  • the second epoxy resin can be selected from the types of epoxy resins mentioned as the first epoxy resin.
  • epoxy resins bisphenol type epoxy resin, novolac type epoxy resin, biphenyl type epoxy resin, aralkyl type epoxy resin, naphthalene type from the viewpoint of further improving the heat resistance and insulation reliability of the obtained printed wiring board It is preferable to use one or more selected from an epoxy resin, an anthracene type epoxy resin, and a dicyclopentadiene type epoxy resin. It is more preferable to use one or more selected from aralkyl type epoxy resins, novolak type epoxy resins having a condensed ring aromatic hydrocarbon structure, and naphthalene type epoxy resins.
  • the lower limit of the content of the epoxy resin is preferably 3% by weight or more, more preferably 4% by weight or more, more preferably 5% by weight with respect to 100% by weight of the entire thermosetting resin composition (total solid content excluding the solvent). The above is more preferable.
  • the upper limit of the content of the epoxy resin is not particularly limited with respect to the entire thermosetting resin composition, but is preferably 60% by weight or less, more preferably 45% by weight or less, and more preferably 30% by weight or less. Further preferred.
  • thermosetting resin composition refers to the whole component except the solvent contained in a thermosetting resin composition. The same applies hereinafter.
  • the thermosetting resin composition of this embodiment can contain a maleimide compound.
  • the maleimide group of the maleimide compound has a five-membered planar structure.
  • the double bond of the maleimide group is easy to interact between molecules and has high polarity. Therefore, a strong intermolecular interaction is exhibited with a maleimide group, a benzene ring, other compounds having a planar structure, and the like, and molecular motion can be suppressed. Therefore, when the thermosetting resin composition contains a maleimide compound, the linear expansion coefficient of the obtained insulating layer can be lowered, the glass transition temperature can be improved, and the heat resistance can be further improved.
  • the maleimide compound is preferably a maleimide compound having at least two maleimide groups in the molecule.
  • the imide-expanded bismaleimide include a maleimide compound represented by the following formula (a1), a maleimide compound represented by the following formula (a2), a maleimide compound represented by the following formula (a3), and the like.
  • Specific examples of the maleimide compound represented by the formula (a1) include BMI-1500 (manufactured by Designa Molecules Co., Ltd., molecular weight 1500).
  • maleimide compound represented by the formula (a2) examples include BMI-1700 (manufactured by Designer Molecules, molecular weight 1700), BMI-1400 (manufactured by Diginer Molecules, molecular weight 1400), and the like.
  • Specific examples of the maleimide compound represented by the formula (a3) include BMI-3000 (manufactured by Designa Molecules Co., Ltd., molecular weight 3000).
  • n represents an integer of 1 or more and 10 or less.
  • n represents an integer of 1 or more and 10 or less.
  • n represents an integer of 1 or more and 10 or less.
  • the lower limit of the weight average molecular weight (Mw) of the maleimide compound is not particularly limited, but is preferably Mw 400 or more, and particularly preferably Mw 800 or more. When Mw is equal to or greater than the lower limit, it is possible to suppress the occurrence of tack in the insulating layer.
  • the upper limit of Mw is not specifically limited, Mw4000 or less is preferable and Mw2500 or less is more preferable. When Mw is not more than the above upper limit value, handling properties are improved during the production of the insulating layer, and it becomes easy to form the insulating layer.
  • the Mw of the maleimide compound can be measured, for example, by GPC (gel permeation chromatography, standard substance: converted to polystyrene).
  • the Mw of the imide-extended bismaleimide having maleimide at both ends can be regarded as the molecular weight between crosslinking points.
  • the content of the maleimide compound contained in the thermosetting resin composition is not particularly limited, but the total solid content of the thermosetting resin composition (that is, the component excluding the solvent) is 100% by weight. 1.0 wt% or more and 25.0 wt% or less is preferable, and 3.0 wt% or more and 20.0 wt% or less is more preferable.
  • the content of the maleimide compound is within the above range, the balance of low heat shrinkage and chemical resistance of the obtained insulating layer can be further improved.
  • thermosetting resin composition of this embodiment may contain a benzoxazine compound.
  • a benzoxazine compound is a compound having a benzoxazine ring.
  • the benzoxazine compound for example, one or more selected from a compound represented by the following formula (2) and a compound represented by the following formula (3) can be used.
  • each X 2 independently represents an alkylene group having 1 to 10 carbon atoms, a group represented by the following formula (1a), a group represented by “—SO 2 —”, “—CO A group represented by “—”, an oxygen atom or a single bond, R 2 is each independently a hydrocarbon group having 1 to 6 carbon atoms, and c is each independently an integer of 0 to 4).
  • X 3 each independently represents an alkylene group having 1 to 10 carbon atoms, a group represented by the following formula (1a), a group represented by “—SO 2 —”, “—CO A group represented by “—”, an oxygen atom or a single bond, R 3 is each independently a hydrocarbon group having 1 to 6 carbon atoms, and d is each independently an integer of 0 to 4).
  • Y is a hydrocarbon group having 6 to 30 carbon atoms having an aromatic ring, and n 2 is an integer of 0 or more.
  • the hydrocarbon group having 6 to 30 carbon atoms having an aromatic ring may be composed only of an aromatic ring, or may have a hydrocarbon group other than the aromatic ring.
  • Y may have one aromatic ring or two or more aromatic rings. When Y has two or more aromatic rings, these aromatic rings may be the same or different.
  • the aromatic ring may be a monocyclic structure or a polycyclic structure.
  • Examples of the hydrocarbon group having 6 to 30 carbon atoms having an aromatic ring include aromatic compounds such as benzene, biphenyl, naphthalene, anthracene, fluorene, phenanthrene, indacene, terphenyl, acenaphthylene, and phenalene.
  • these aromatic hydrocarbon groups may have a substituent.
  • that the aromatic hydrocarbon group has a substituent means that part or all of the hydrogen atoms constituting the aromatic hydrocarbon group are substituted by the substituent.
  • the substituent include an alkyl group.
  • the alkyl group as the substituent is preferably a chain alkyl group.
  • the number of carbon atoms is preferably 1 or more and 10 or less, more preferably 1 or more and 6 or less, and particularly preferably 1 or more and 4 or less. Specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a tert-butyl group, and a sec-butyl group.
  • Such a group Y preferably has a group obtained by removing two hydrogen atoms from benzene or naphthalene.
  • Examples of the group represented by the above formula (1a) include the following formulas (1a-1), (1a-2) ) Is more preferable.
  • the insulating layer obtained from a thermosetting resin composition exhibits excellent heat resistance.
  • R 4 is each independently a hydrocarbon group having 1 to 6 carbon atoms.
  • Each e is independently an integer of 0 or more and 4 or less, more preferably 0.
  • n 2 may be an integer of 0 or more, preferably an integer of 0 or more and 5 or less, and preferably an integer of 1 or more and 3 or less. More preferably, 1 or 2 is particularly preferable.
  • X 2 and X 3 in the above formula (2) and the above formula (3) are, for example, preferably independently a linear or branched alkylene group having 1 to 10 carbon atoms.
  • the linear alkylene group include methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, decanylene group, trimethylene group, tetramethylene group. Group, pentamethylene group, hexamethylene group and the like.
  • branched alkylene group examples include —C (CH 3 ) 2 — (isopropylene group), —CH (CH 3 ) —, —CH (CH 2 CH 3 ) —, —C Alkylmethylene groups such as (CH 3 ) (CH 2 CH 3 ) —, —C (CH 3 ) (CH 2 CH 2 CH 3 ) —, —C (CH 2 CH 3 ) 2 —; —CH (CH 3 ) CH 2 —, —CH (CH 3 ) CH (CH 3 ) —, —C (CH 3 ) 2 CH 2 —, —CH (CH 2 CH 3 ) CH 2 —, —C (CH 2 CH 3 ) 2 Examples thereof include an alkylethylene group such as —CH 2 —.
  • the number of carbon atoms of the alkylene group in X 2 and X 3 may be 1 or more and 10 or less, more preferably 1 or more and 7 or less, and further preferably 1 or more and 3 or less.
  • examples of the alkylene group having such a carbon number include a methylene group, an ethylene group, a propylene group, and an isopropylene group.
  • R 2 and R 3 in the above formula (2) and the above formula (3) are, for example, each independently a hydrocarbon group having 1 to 6 carbon atoms, but a hydrocarbon having 1 or 2 carbon atoms. It is preferably a group, specifically a methyl group or an ethyl group.
  • c and d in the above formula (2) and the above formula (3) are each independently an integer of 0 or more and 4 or less, preferably an integer of 0 or more and 2 or less, and preferably 0. More preferred.
  • Such a benzoxazine compound is preferably a compound represented by the above formula (2) among the compound represented by the above formula (2) and the compound represented by the above formula (3).
  • the insulating layer obtained from a thermosetting resin composition can exhibit more excellent low heat shrinkability and chemical resistance.
  • X 2 is a linear or branched alkylene group having 1 to 3 carbon atoms, and R 2 is a hydrocarbon group having 1 or 2 carbon atoms.
  • c is preferably an integer of 0 or more and 2 or less.
  • X 2 is a group represented by any one of formulas (1a-1) and (1a-2), and c is preferably 0.
  • the insulating layer obtained from a thermosetting resin composition can exhibit more excellent low heat shrinkability and chemical resistance.
  • benzoxazine compound examples include, for example, a compound represented by the following formula (2-1), a compound represented by the following formula (2-2), a compound represented by the following formula (2-3), Examples thereof include one or more selected from a compound represented by (3-1), a compound represented by the following formula (3-2), and a compound represented by the following formula (3-3).
  • each R is independently a hydrocarbon group having 1 to 4 carbon atoms.
  • the content of the benzoxazine compound contained in the thermosetting resin composition is not particularly limited, but is 1 when the total solid content of the thermosetting resin composition (that is, the component excluding the solvent) is 100% by weight. 0.0 wt% or more and 25.0 wt% or less is preferable, and 3.0 wt% or more and 20.0 wt% or less is more preferable.
  • the content of the benzoxazine compound is within the above range, the low heat shrinkage and chemical resistance of the resulting insulating layer can be further improved.
  • thermosetting resin composition of this embodiment can contain an inorganic filler.
  • inorganic fillers include silicates such as talc, calcined clay, unfired clay, mica, and glass; oxides such as titanium oxide, alumina, boehmite, silica, and fused silica; calcium carbonate, magnesium carbonate, and hydrotal Carbonates such as sites; hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide; sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite; zinc borate, barium metaborate, aluminum borate And borate salts such as calcium borate and sodium borate; nitrides such as aluminum nitride, boron nitride, silicon nitride and carbon nitride; titanates such as strontium titanate and barium titanate.
  • talc, alumina, glass, silica, mica, aluminum hydroxide, and magnesium hydroxide are preferable, and silica is particularly preferable.
  • the inorganic filler one of these may be used alone, or two or more may be used in combination.
  • the lower limit of the average particle diameter of the inorganic filler is not particularly limited, for example, 0.01 ⁇ m or more is preferable, 0.05 ⁇ m or more is more preferable, and 0.5 ⁇ m or more is more preferable. Thereby, it can suppress that the viscosity of the varnish of the said thermosetting resin becomes high, and can improve the workability
  • the upper limit of the average particle diameter of the inorganic filler is not particularly limited, but is preferably 5.0 ⁇ m or less, more preferably 2.0 ⁇ m or less, and further preferably 1.0 ⁇ m or less.
  • the average particle size of the inorganic filler is determined by measuring the particle size distribution of the particles on a volume basis using, for example, a laser diffraction particle size distribution measuring apparatus (LA-500, manufactured by HORIBA), and the median diameter (D50 ) May be the average particle size.
  • the lower limit value of the average particle diameter of the inorganic filler is, for example, preferably 0.5 ⁇ m or more, and 0.6 ⁇ m or more. Is more preferable, and 0.8 ⁇ m or more is more preferable.
  • the lower limit of the average particle diameter of the inorganic filler is, for example, preferably 2 ⁇ m or less, more preferably 1.9 ⁇ m or less, and even more preferably 1.8 ⁇ m or less.
  • the inorganic filler is not particularly limited, but an inorganic filler having a monodispersed average particle diameter may be used, or an inorganic filler having a polydispersed average particle diameter may be used. Furthermore, one type or two or more types of inorganic fillers having an average particle size of monodispersed and / or polydispersed may be used in combination.
  • the inorganic filler preferably contains silica particles.
  • the average particle diameter of the silica particles is not particularly limited, but is preferably 5.0 ⁇ m or less, more preferably 0.1 ⁇ m or more and 4.0 ⁇ m or less, and further preferably 0.2 ⁇ m or more and 2.0 ⁇ m or less.
  • the filling property of the inorganic filler into the resin film can be further improved.
  • the lower limit of the content of the inorganic filler is not particularly limited with respect to 100% by weight of the total solid content of the thermosetting resin composition, for example, preferably 65% by weight or more, more preferably 70% by weight or more, More preferably 75% by weight or more.
  • the water absorption rate can be made especially low.
  • the curvature of a semiconductor package can be suppressed.
  • the cured product of the resin film of the present embodiment can increase the content of the inorganic filler while maintaining a high elongation rate, the stress relaxation property can be improved.
  • the upper limit of the content of the inorganic filler is not particularly limited with respect to 100% by weight of the total solid content of the thermosetting resin composition, but is preferably 98% by weight or less, for example, 95% by weight. % Or less, more preferably 90% by weight or less.
  • the content of the inorganic filler is within the above range, the workability of the cured product of the resin film can be improved.
  • the thermosetting resin composition of the present embodiment can contain a curing agent.
  • the curing agent is not particularly limited.
  • tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol (DMP-30); 2-methylimidazole, 2- Ethyl-4-methylimidazole (EMI24), 2-phenyl-4-methylimidazole (2P4MZ), 2-phenylimidazole (2PZ), 2-phenyl-4-methyl-5-hydroxyimidazole (2P4MHZ), 1-benzyl- imidazole compounds such as 2-phenylimidazole (1B2PZ); catalyst type curing agents include Lewis acids such as BF 3 complex.
  • aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), m-phenylenediamine, p-phenylenediamine, o-xylenediamine, 4,4′- Diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 1,5-diaminonaphthalene, 4,4'- (P-phenylenediisopropylidene) dianiline, 2,2- [4- (4-aminophenoxy) phenyl] propane, 4,4′-diamino-3,3′-dimethyldiphenylmethane, 4,4′-diamino-3 , 3
  • a phenol resin-based curing agent such as a novolak type phenol resin or a resol type phenol resin; a urea resin such as a methylol group-containing urea resin; a melamine resin such as a methylol group-containing melamine resin;
  • a condensation type curing agent may also be used. These may be used alone or in combination of two or more.
  • the phenol resin-based curing agent is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure are not particularly limited.
  • phenol novolak resin cresol novolak resin, Novolak type phenolic resin such as naphthol novolak resin; polyfunctional phenolic resin such as triphenolmethane type phenolic resin; modified phenolic resin such as terpene modified phenolic resin and dicyclopentadiene modified phenolic resin; phenylene skeleton and / or biphenylene skeleton
  • Aralkyl resins such as phenol aralkyl resins, naphthol aralkyl resins having a phenylene and / or biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F Etc.
  • The. These may be used alone or in combination of two or more.
  • a phenol resin-based curing agent having a hydroxyl group equivalent of 90 g / eq or more and 250 g / eq or less may be used.
  • the weight average molecular weight of the phenol resin is not particularly limited, but the weight average molecular weight is preferably 4 ⁇ 10 2 or more and 1.8 ⁇ 10 3 or less, more preferably 5 ⁇ 10 2 or more and 1.5 ⁇ 10 3 or less.
  • the weight average molecular weight equal to or higher than the above lower limit value, problems such as tackiness occur in the prepreg, and by making the above upper limit value or less, the impregnation property to the fiber base material is improved at the time of prepreg production, A more uniform product can be obtained.
  • the lower limit of the content of the curing agent is not particularly limited with respect to 100% by weight of the total solid content of the thermosetting resin composition, but is preferably 0.01% by weight or more, for example, 0.05% by weight or more. More preferred is 0.2% by weight or more.
  • the upper limit of the content of the curing agent is not particularly limited with respect to 100% by weight of the total solid content of the thermosetting resin composition, but is preferably 15% by weight or less, and more preferably 10% by weight or less. 8% by weight or less is more preferable.
  • the preservability of a prepreg can be improved more as content of a hardening
  • the thermosetting resin composition of the present embodiment can further contain a cyanate resin.
  • the cyanate resin is a resin having a cyanate group (—O—CN) in the molecule, and a resin having two or more cyanate groups in the molecule can be used.
  • a cyanate resin is not particularly limited. For example, it can be obtained by reacting a halogenated cyanide compound with phenols or naphthols, and prepolymerizing by a method such as heating as necessary.
  • the commercial item prepared in this way can also be used.
  • the linear expansion coefficient of the cured resin film can be reduced.
  • the electrical properties (low dielectric constant, low dielectric loss tangent), mechanical strength, etc. of the cured resin film can be enhanced.
  • cyanate resin examples include novolak type cyanate resin; bisphenol type cyanate resin, bisphenol E type cyanate resin, bisphenol type cyanate resin such as tetramethylbisphenol F type cyanate resin; reaction of naphthol aralkyl type phenol resin and cyanogen halide.
  • Naphthol aralkyl type cyanate resin obtained by the following: dicyclopentadiene type cyanate resin; biphenylalkyl type cyanate resin.
  • novolak type cyanate resins and naphthol aralkyl type cyanate resins are preferable, and novolak type cyanate resins are more preferable.
  • the novolac-type cyanate resin the crosslink density of the cured product of the resin film is increased, and the heat resistance is improved.
  • novolac-type cyanate resin forms a triazine ring after the curing reaction. Furthermore, it is considered that novolak-type cyanate resin has a high benzene ring ratio due to its structure and is easily carbonized. Moreover, the cured product of the resin film containing the novolak type cyanate resin has excellent rigidity. Therefore, the heat resistance of the cured resin film can be further improved.
  • novolac-type cyanate resin for example, a resin represented by the following general formula (I) can be used.
  • the average repeating unit n of the novolak cyanate resin represented by the general formula (I) is an arbitrary integer.
  • the average repeating unit n is not particularly limited, but is preferably 1 or more, and more preferably 2 or more. When the average repeating unit n is not less than the above lower limit, the heat resistance of the novolak cyanate resin is improved, and it is possible to suppress the demerization and volatilization of the low mer during heating.
  • the average repeating unit n is not particularly limited, but is preferably 10 or less, more preferably 7 or less. It can suppress that melt viscosity becomes it high that n is below the said upper limit, and can improve the moldability of a resin film.
  • a naphthol aralkyl type cyanate resin represented by the following general formula (II) is also preferably used.
  • the naphthol aralkyl type cyanate resin represented by the following general formula (II) includes, for example, naphthols such as ⁇ -naphthol or ⁇ -naphthol, p-xylylene glycol, ⁇ , ⁇ '-dimethoxy-p-xylene, 1,4 A resin obtained by condensing a naphthol aralkyl type phenol resin obtained by reaction with di (2-hydroxy-2-propyl) benzene or the like and cyanogen halide.
  • the repeating unit n in the general formula (II) is preferably an integer of 10 or less.
  • the repeating unit n is 10 or less, a more uniform resin film can be obtained.
  • intramolecular polymerization hardly occurs at the time of synthesis, the liquid separation property at the time of washing with water tends to be improved, and the decrease in yield tends to be prevented.
  • each R independently represents a hydrogen atom or a methyl group, and n represents an integer of 1 or more and 10 or less.
  • one kind of cyanate resin may be used alone, two or more kinds may be used in combination, and one kind or two or more kinds and a prepolymer thereof may be used in combination.
  • the lower limit of the content of the cyanate resin is, for example, preferably 1% by weight or more, more preferably 2% by weight or more, and further more preferably 3% by weight or more with respect to 100% by weight of the total solid content of the thermosetting resin composition. preferable. It is possible to achieve low linear expansion and high elastic modulus of the cured resin film.
  • the upper limit of the content of the cyanate resin is not particularly limited with respect to 100% by weight of the total solid content of the thermosetting resin composition, but is preferably 30% by weight or less, and more preferably 25% by weight or less. 20% by weight or less is more preferable. Heat resistance and moisture resistance can be improved. Further, when the content of the cyanate resin is within the above range, the storage elastic modulus E ′ of the cured product of the resin film can be further improved.
  • thermosetting resin composition of this embodiment may contain a phenoxy resin, for example.
  • phenoxy resin examples include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton.
  • a phenoxy resin having a structure having a plurality of these skeletons can also be used.
  • a phenoxy resin having a biphenyl skeleton and a bisphenol S skeleton as the phenoxy resin.
  • the rigidity of the biphenyl skeleton can increase the glass transition temperature of the phenoxy resin, and the presence of the bisphenol S skeleton can improve the adhesion between the phenoxy resin and the metal.
  • the heat resistance of the insulating layer can be improved, and the adhesion of the wiring layer to the insulating layer can be improved.
  • a phenoxy resin having a bisphenol A skeleton and a bisphenol F skeleton as the phenoxy resin.
  • the adhesiveness of a wiring layer and an insulating layer can further be improved.
  • a phenoxy resin having a bisphenolacetophenone structure represented by the following general formula (X).
  • R 1 may be the being the same or different, a hydrogen atom, a group selected from a hydrocarbon group or a halogen element 1 to 10 carbon atoms
  • R 2 is A group selected from a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, or a halogen element
  • R 3 is a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms
  • m is 0 to 5 (It is an integer.)
  • the phenoxy resin containing a bisphenol acetophenone structure has a bulky structure, it has excellent solvent solubility and compatibility with the thermosetting resin component to be blended. In addition, since a uniform rough surface can be formed with low roughness, the SAP characteristics of the insulating layer can be improved.
  • the phenoxy resin having a bisphenolacetophenone structure can be synthesized by a known method such as a method of increasing the molecular weight of an epoxy resin and a phenol resin using a catalyst.
  • the phenoxy resin having a bisphenol acetophenone structure may contain a structure other than the bisphenol acetophenone structure of the general formula (X), and the structure is not particularly limited, but bisphenol A type, bisphenol F type, bisphenol S type, biphenyl Type, phenol novolac type, cresol novolac type structure and the like. Among them, a phenoxy resin containing a biphenyl type structure as a structure other than the bisphenol acetophenone structure is preferable because of its high glass transition temperature.
  • the content of the bisphenolacetophenone structure of the general formula (X) in the phenoxy resin containing a bisphenolacetophenone structure is not particularly limited, but is preferably 5 mol% or more and 95 mol% or less, and preferably 10 mol% or more and 85 mol% or less. More preferably, it is 15 mol% or more and 75 mol% or less.
  • the effect which improves heat resistance and moisture-proof reliability can fully be exhibited as content is more than the said lower limit.
  • solvent solubility can be improved as content is below the said upper limit.
  • the lower limit of the weight average molecular weight (Mw) of the phenoxy resin is, for example, preferably 10,000 or more, more preferably 15,000 or more, and further preferably 20,000 or more. Thereby, the compatibility with other resin and the solubility to a solvent can be improved.
  • the upper limit value of the weight average molecular weight (Mw) of the phenoxy resin is, for example, preferably 60,000 or less, more preferably 55,000 or less, and further preferably 50,000 or less. Thereby, the film formability of an insulating layer improves and it can suppress that a malfunction generate
  • the content of the phenoxy resin is not particularly limited, but is preferably 0.5% by weight or more and 40% by weight or less, and preferably 1% by weight or more and 20% by weight or less with respect to the entire thermosetting resin composition excluding the inorganic filler. % Or less is more preferable.
  • the content is equal to or higher than the lower limit, it is possible to suppress a decrease in mechanical strength of the insulating layer and a decrease in plating adhesion between the insulating layer and the conductor circuit.
  • it is not more than the above upper limit an increase in the coefficient of thermal expansion of the insulating layer can be suppressed, and a decrease in heat resistance can be suppressed.
  • thermosetting resin composition of this embodiment may contain a hardening accelerator, for example. Thereby, the sclerosis
  • a hardening accelerator the compound which accelerates
  • a hardening accelerator for example, zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, zinc octylate, bisacetylacetonate cobalt (II), trisacetylacetonate cobalt (III)
  • Organic metal salts such as triethylamine, tributylamine, tertiary amines such as diazabicyclo [2,2,2] octane, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-ethyl-4-ethylimidazole, Imidazoles such as 2-phenyl-4-ethylimidazole, 2-phenyl-4-methyl-5-hydroxyimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxyimidazole , Phenol, bisphe Lumpur A, phenol
  • the onium salt compound used as a curing accelerator is not particularly limited, for example, a compound represented by the following general formula (2) can be used.
  • R 3 , R 4 , R 5 and R 6 are each an organic group having a substituted or unsubstituted aromatic ring or heterocyclic ring, or a substituted or unsubstituted aliphatic group. represents a group, optionally being the same or different .
  • a - is an anion of n (n ⁇ 1) number of proton donor having a proton capable of releasing the extracellular molecules in at least one or more intramolecular or, Indicates the complex anion)
  • the lower limit of the content of the curing accelerator is, for example, preferably 0.01% by weight or more and more preferably 0.05% by weight or more with respect to 100% by weight of the total solid content of the thermosetting resin composition. .
  • the upper limit value of the content of the curing accelerator is, for example, preferably 2.5% by weight or less and more preferably 1% by weight or less with respect to 100% by weight of the total solid content of the thermosetting resin composition.
  • the thermosetting resin composition of this embodiment may contain a coupling agent.
  • the coupling agent may be added directly when preparing the thermosetting resin composition, or may be added in advance to the inorganic filler.
  • Use of a coupling agent can improve the wettability of the interface between the inorganic filler and each resin. Therefore, it is preferable to use a coupling agent, and the heat resistance of the cured resin film can be improved.
  • adhesiveness with copper foil can be improved by using a coupling agent. Furthermore, since the moisture absorption resistance can be improved, the adhesion with the copper foil can be maintained even after the humidity environment.
  • the coupling agent examples include silane coupling agents such as epoxy silane coupling agents, cationic silane coupling agents, and amino silane coupling agents, titanate coupling agents, and silicone oil type coupling agents.
  • a coupling agent may be used individually by 1 type, and may use 2 or more types together.
  • the coupling agent may contain a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include epoxy silane, amino silane, alkyl silane, ureido silane, mercapto silane, and vinyl silane.
  • the compound examples include ⁇ -aminopropyltriethoxysilane, ⁇ -aminopropyltrimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltrimethoxysilane, and N- ⁇ (aminoethyl) ⁇ -amino.
  • the addition amount of the coupling agent can be appropriately adjusted with respect to the specific surface area of the inorganic filler.
  • the lower limit of the amount of coupling agent added is, for example, preferably 0.01% by weight or more, more preferably 0.05% by weight or more with respect to 100% by weight of the total solid content of the thermosetting resin composition. preferable.
  • the upper limit of the addition amount of the coupling agent is preferably, for example, 3% by weight or less, more preferably 1.5% by weight or less, with respect to 100% by weight of the total solid content of the thermosetting resin composition.
  • the content of the coupling agent is not more than the above upper limit value, it is possible to suppress the influence on the reaction, and it is possible to suppress a decrease in the bending strength or the like of the cured product of the resin film.
  • thermosetting resin composition of the present embodiment is a dye such as green, red, blue, yellow, and black, a pigment such as a black pigment, and a dye within a range that does not impair the object of the present invention.
  • a dye such as green, red, blue, yellow, and black
  • a pigment such as a black pigment
  • a dye within a range that does not impair the object of the present invention.
  • One or more colorants, low-stress agents, antifoaming agents, leveling agents, UV absorbers, foaming agents, antioxidants, flame retardants, ion scavengers, and other components thermosetting resins, curing agents, inorganic fillers
  • Additives other than materials, curing accelerators, and coupling agents may be included. These may be used alone or in combination of two or more.
  • thermosetting resin composition of the present embodiment may not contain a low stress agent or a rubber component. Even in this case, the cured product of the thermosetting resin composition of the present embodiment can be made to have a low elastic modulus while increasing the filling rate of the inorganic filler, so that it is caused by warpage during the substrate process or impact during transportation. Cracks can be suppressed.
  • pigments examples include kaolin, synthetic iron oxide red, cadmium yellow, nickel titanium yellow, strontium yellow, hydrous chromium oxide, chromium oxide, cobalt aluminate, synthetic ultramarine blue, etc., polycyclic pigments such as phthalocyanine, azo pigments Etc.
  • the dye examples include isoindolinone, isoindoline, quinophthalone, xanthene, diketopyrrolopyrrole, perylene, perinone, anthraquinone, indigoid, oxazine, quinacridone, benzimidazolone, violanthrone, phthalocyanine, azomethine and the like.
  • the varnish-like thermosetting resin composition can contain a solvent.
  • the solvent include acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, heptane, cyclohexane, cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol, cellosolve, carbitol, anisole, and N -Organic solvents such as methylpyrrolidone. These may be used alone or in combination of two or more.
  • the solid content of the thermosetting resin composition is preferably, for example, 30% by weight to 80% by weight, and more preferably 40% by weight to 70% by weight. . Thereby, the thermosetting resin composition excellent in workability
  • the varnish-like thermosetting resin composition comprises the above-described components, for example, an ultrasonic dispersion method, a high-pressure collision dispersion method, a high-speed rotation dispersion method, a bead mill method, a high-speed shear dispersion method, and a rotation and revolution dispersion method. It can prepare by melt
  • the resin film of the present embodiment can be obtained by forming a film of the thermosetting resin composition having a varnish shape.
  • the resin film of this embodiment can be obtained by removing the solvent from the coating film obtained by coating a varnish-like thermosetting resin composition.
  • the solvent content can be 5% by weight or less based on the entire resin film.
  • a step of removing the solvent may be performed under conditions of 100 ° C. to 150 ° C. and 1 minute to 5 minutes. Thereby, it is possible to sufficiently remove the solvent while suppressing the curing of the resin film containing the thermosetting resin.
  • FIG. 1 is a cross-sectional view showing an example of the configuration of the resin film with carrier 100 in the present embodiment.
  • the resin film with a carrier 100 of the present embodiment includes a carrier base material 12 and a resin film 10 formed on the carrier base material 12 and formed from the thermosetting resin composition. Can be provided. Thereby, the handleability of the resin film 10 can be improved.
  • the resin film with carrier 100 may be a roll shape that can be wound or a single wafer shape such as a rectangular shape.
  • a polymer film or a metal foil can be used as the carrier substrate 12.
  • the polymer film is not particularly limited.
  • polyolefin such as polyethylene and polypropylene
  • polyester such as polyethylene terephthalate and polybutylene terephthalate
  • release paper such as polycarbonate and silicone sheet
  • heat resistance such as fluorine resin and polyimide resin.
  • a thermoplastic resin sheet having The metal foil is not particularly limited.
  • a sheet made of polyethylene terephthalate is most preferable because it is inexpensive and easy to adjust the peel strength.
  • a sheet made of such a material as the carrier substrate 12 it becomes easy to peel the resin film 10 from the carrier substrate 12 with an appropriate strength.
  • the lower limit of the thickness of the resin film 10 is not particularly limited, but is preferably 1 ⁇ m or more, more preferably 3 ⁇ m or more, and further preferably 5 ⁇ m or more. Thereby, the mechanical strength of the resin film 10 can be increased.
  • the upper limit value of the thickness of the resin film 10 is not particularly limited, but is preferably 500 ⁇ m or less, more preferably 300 ⁇ m or less, and even more preferably 100 ⁇ m or less. Thereby, the semiconductor device can be thinned.
  • the thickness of the carrier substrate is not particularly limited, but is preferably 10 to 100 ⁇ m, for example, and more preferably 10 to 70 ⁇ m. Thereby, the handleability at the time of manufacturing the resin film 100 with a carrier becomes more favorable.
  • the resin film with carrier 100 of the present embodiment may be a single layer or a multilayer, and may include one or more types of resin films 10. When the resin sheet is multi-layered, the resin sheets may be composed of the same kind or different kinds.
  • the resin film with carrier 100 may have a protective film on the outermost layer side on the resin film 10.
  • the method for forming the resin film with carrier 100 is not particularly limited.
  • a coating film is formed by applying a varnish-like thermosetting resin composition on the carrier substrate 12 using various coater apparatuses, and then the coating film is appropriately dried. Can be used to remove the solvent.
  • the resin film of the present embodiment is a resin film formed from the thermosetting resin composition. Since the cured product of the resin film of the present embodiment can achieve both low elastic properties and high elongation properties, excellent toughness can be realized.
  • the upper limit value of the storage elastic modulus E ′ 30 at 30 ° C. of the cured product is 10 GPa or less. , 9 GPa or less is preferable, and 8 GPa or less is more preferable. Thereby, the hardened
  • the lower limit value of the storage elastic modulus E ′ 30 at 30 ° C. is 1 GPa or more. Thereby, since a predetermined elastic modulus is obtained, a cured product of the resin film having excellent strength can be obtained.
  • the lower limit value of the tensile elongation rate of the cured product is 2% or more, preferably 3% or more. More preferably, it is 4% or more.
  • flexibility and extensibility is obtained.
  • a cured product of a resin film having high elongation while being highly filled with an inorganic filler can be obtained.
  • the upper limit value of the tensile elongation is not particularly limited, but may be 40% or less, for example. In the present embodiment, since the tensile elongation can be increased while reducing the storage elastic modulus, a cured resin film having excellent toughness can be obtained.
  • the lower limit of the glass transition temperature of the cured product of the thermosetting resin composition is not particularly limited, but is preferably 10 ° C. or higher, more preferably 15 ° C. or higher, and further preferably 20 ° C. or higher.
  • the upper limit of the said glass transition temperature is not specifically limited, For example, it is good also as 220 degrees C or less, 110 degrees C or less is more preferable, 80 degrees C or less is more preferable, and 35 degrees C or less is further more preferable.
  • the lower limit of the peak value of the loss tangent tan ⁇ of the cured product of the thermosetting resin composition is, for example, preferably 0.25 or more, more preferably 0.3 or more, and further preferably 0.45 or more. .
  • cured material can absorb energy, the influence by the stress etc. resulting from the expansion coefficient difference between members can be made small, and a substrate crack can be suppressed.
  • the upper limit value of the peak value of the loss tangent tan ⁇ is not particularly limited, but is preferably 1 or less, more preferably 0.95 or less, and still more preferably 0.9 or less.
  • the lower limit of the half-value width of the peak value of the loss tangent tan ⁇ of the cured product of the thermosetting resin composition is, for example, preferably 20 or more, more preferably 30 or more, and further preferably 35 or more. Thereby, the energy absorptivity of the said hardened
  • the upper limit of the half width of the peak of the loss tangent tan ⁇ is not particularly limited, but is preferably 100 or less, more preferably 90 or less, and still more preferably 80 or less. Thereby, since the change of the elasticity modulus of the said hardened
  • the glass transition temperature, loss tangent tan ⁇ , and storage elastic modulus can be measured using a dynamic viscoelasticity analyzer (DMA).
  • the glass transition temperature is a temperature at which the loss tangent tan ⁇ has a maximum value in a curve obtained by dynamic viscoelasticity measurement under conditions of a temperature rising rate of 5 ° C./min and a frequency of 1 Hz.
  • the loss tangent tan ⁇ and the storage elastic modulus are calculated as a loss tangent tan ⁇ and a storage elastic modulus E ′ 30 at 30 ° C. by dynamic viscoelasticity measurement under conditions of a temperature rising rate of 5 ° C./min and a frequency of 1 Hz. it can.
  • the glass transition temperature, the loss tangent tan ⁇ , and the storage elastic modulus are set to a frequency using, for example, a dynamic viscoelasticity measuring device for a cured resin film obtained by heat treatment at 200 ° C. for 2 hours. It can be calculated from a measurement result obtained by performing a dynamic viscoelasticity test under the conditions of 1 Hz and a heating rate of 5 ° C./min.
  • a dynamic viscoelasticity measuring apparatus For example, a DMA apparatus (TA instrument company make, Q800) can be used.
  • the tensile elongation rate can be measured as follows. First, a cured product of a resin film obtained by heat treatment at 200 ° C. for 2 hours is cut into a test piece of length 100 mm ⁇ width 6 mm. In the tensile test, evaluation is performed by holding the test piece between chucks arranged at a constant distance and pulling the test piece at a constant speed until the test piece breaks. At this time, using a precision universal testing machine (manufactured by Shimadzu Corp., Autograph AG-IS), initial chuck distance L: 20 mm, test piece thickness: 0.1 mm, measurement temperature: 25 ° C., test speed: 1 mm Use the conditions per minute. In the tensile test, the tensile elongation percentage (%) is calculated from the amount of displacement when fractured under the above conditions and the initial inter-chuck distance.
  • the upper limit value of the average linear expansion coefficient calculated in the range of 50 ° C. to 250 ° C. of the cured resin film is, for example, preferably 120 ppm / ° C. or less, more preferably 110 ppm / ° C. or less, and 90 ppm / More preferably, it is not higher than ° C.
  • the curvature of the printed wiring board during a manufacturing process can be reduced.
  • the warpage of the obtained semiconductor package can be reduced.
  • the lower limit value of the average linear expansion coefficient is not particularly limited, but is preferably 1 ppm / ° C or more, and more preferably 10 ppm / ° C or more.
  • the linear expansion coefficient can be measured using, for example, a thermomechanical analyzer TMA.
  • the linear expansion coefficient is determined by using, for example, a thermomechanical analyzer TMA (TA Instruments, Q400), a temperature range of 50 to 250 ° C., a temperature rising rate of 10 ° C./min, a load of 10 g, Thermomechanical analysis (TMA) is measured for 2 cycles under the tension mode condition.
  • TMA thermomechanical analyzer
  • the average value of the linear expansion coefficients in the plane direction (XY direction) in the range of 50 ° C. to 250 ° C. is calculated.
  • the value of the 2nd cycle is employ
  • the storage elastic modulus and the tensile elongation of the cured product of the thermosetting resin composition are each selected.
  • the rate can be within a desired range.
  • the cross-linking density of the cured product can be controlled by the storage elastic modulus and the tensile elongation rate.
  • the printed wiring board of this embodiment includes an insulating layer composed of a cured product of the above resin film (cured product of a thermosetting resin composition).
  • the cured product of the resin film is, for example, a core layer, a buildup layer, a solder resist layer of a normal printed wiring board, a buildup layer, a solder resist layer, or a PLP in a printed wiring board having no core layer. It can be used for an interlayer insulating layer and a solder resist layer of a coreless substrate used, an interlayer insulating layer and a solder resist layer of a MIS substrate, and the like.
  • Such an insulating layer is preferably used for an interlayer insulating layer and a solder resist layer constituting the printed wiring board in a large-area printed wiring board used to collectively create a plurality of semiconductor packages. it can.
  • the printed wiring board 300 of this embodiment includes an insulating layer made of a cured product of the resin film 10 described above.
  • the printed wiring board 300 may have a structure including an insulating layer 301 (core layer) and an insulating layer 401 (solder resist layer).
  • the printed wiring board 300 has a structure including an insulating layer 301 (core layer), an insulating layer 305 (build-up layer), and an insulating layer 401 (solder resist layer). It may be.
  • Each of these core layer, build-up layer, and solder resist layer can be composed of, for example, a cured product of the resin film of the present embodiment.
  • This core layer may be composed of a cured body obtained by curing a prepreg formed by impregnating a fiber base material with the thermosetting resin composition of the present embodiment.
  • the cured product formed of the resin film of the present embodiment may not include a fiber substrate such as a glass cloth or a paper substrate. Thereby, it can be set as the structure especially suitable in order to form a buildup layer (interlayer insulation layer) and a soldering resist layer.
  • the printed wiring board 300 may be a single-sided printed wiring board, a double-sided printed wiring board, or a multilayer printed wiring board.
  • a double-sided printed wiring board is a printed wiring board in which a metal layer 303 is laminated on both sides of an insulating layer 301.
  • the multilayer printed wiring board is a printed wiring board in which two or more build-up layers (for example, the insulating layer 305) are stacked on the insulating layer 301 as a core layer by a plated through hole method, a build-up method, or the like. .
  • the via hole 307 may be a hole for electrically connecting layers, and may be either a through hole or a non-through hole.
  • the via hole 307 may be formed by embedding a metal.
  • the buried metal may have a structure covered with an electroless metal plating film 308.
  • the metal layer 303 may be, for example, a circuit pattern or an electrode pad.
  • the metal layer 303 may have, for example, a metal laminated structure of the metal foil 105 and the electrolytic metal plating layer 309.
  • the metal layer 303 is, for example, on the surface of an insulating layer (for example, the insulating layer 301 or the insulating layer 305) formed of the metal foil 105 that has been subjected to chemical treatment or plasma treatment or a cured product of the resin film of the present embodiment. It is formed by the SAP (semi-additive process) method.
  • the electroless metal plating film 308 is applied on the metal foil 105 or the insulating layers 301 and 305, the non-circuit forming portion is protected by a plating resist, and the electrolytic metal plating layer 309 is applied by electrolytic plating.
  • the metal layer 303 is formed by patterning the electrolytic metal plating film 309 by removal and flash etching.
  • the printed wiring board 300 of the present embodiment can be a resin board that does not contain glass fiber.
  • the insulating layer 301 that is the core layer may be configured not to contain glass fibers. Even in a semiconductor package using such a resin substrate, the linear expansion coefficient of the cured product of the resin film can be reduced, so that package warpage can be sufficiently suppressed.
  • FIGS. 3A and 3B are cross-sectional views illustrating an example of the configuration of the semiconductor device 400.
  • the semiconductor device 400 of this embodiment can include a printed wiring board 300 and a semiconductor element mounted on the circuit layer of the printed wiring board 300 or built in the printed wiring board 300.
  • the semiconductor device 400 shown in FIG. 3A has a structure in which the semiconductor element 407 is mounted on the circuit layer (metal layer 303) of the printed wiring board 300 shown in FIG.
  • the semiconductor device 400 shown in FIG. 3B has a structure in which the semiconductor element 407 is mounted on the circuit layer (metal layer 303) of the printed wiring board 300 shown in FIG.
  • the semiconductor element 407 is covered with a sealing material layer 413.
  • Such a semiconductor package may have a flip chip structure in which the semiconductor element 407 is electrically connected to the printed wiring board 300 via the solder bump 410 and the metal layer 303.
  • the structure of the semiconductor package is not limited to the flip chip connection structure, and may have various structures.
  • a fan-out structure may be used.
  • the insulating layer formed of the cured resin film of the present embodiment can suppress substrate warpage and substrate cracks in the manufacturing process of a semiconductor package having a fan-out structure.
  • the printed wiring board 500 of the present modification is a printed wiring board that does not have a core layer.
  • the printed wiring board 500 of the present embodiment can be a coreless resin substrate that is not provided with a core layer having a fiber base material, and is constituted by, for example, a buildup layer or a solder resist layer. These build-up layers and solder resist layers are preferably composed of insulating layers formed of a cured product of the resin film of the present embodiment.
  • the printed wiring board 500 shown in FIG. 4C includes two build-up layers (insulating layers 540 and 550) and a solder resist layer (insulating layer 560). Note that the build-up layer of the printed wiring board 500 may be a single layer or may have two or more layers.
  • the insulating layer formed of the cured resin film of this embodiment is excellent in toughness, warpage of the printed wiring board 500 and cracks during transportation can be suppressed.
  • the metal layers 542, 552, and 562 shown in FIG. 4C may be circuit patterns, electrode pads, or may be formed by the SAP method as described above. . These metal layers 542, 552, and 562 may be a single layer or a plurality of metal layers.
  • the printed wiring board 500 may have a large area on which a plurality of semiconductor elements can be mounted on a plane. As a result, a plurality of semiconductor packages can be obtained by collectively sealing a plurality of semiconductor elements mounted on the printed wiring board 500 and then separating them into individual pieces.
  • the printed wiring board 500 can be a panel board having a substantially circular shape or a rectangular shape.
  • the method for manufacturing the printed wiring board 500 is not particularly limited.
  • the printed wiring board 500 can be obtained by forming the buildup layer and the solder resist layer on the support substrate 510 and then peeling the support substrate 510.
  • a carrier foil 520 and a metal foil 530 are arranged on a large-area support substrate 510 (for example, a plate member made of SUS).
  • an adhesive resin (not shown) can be provided between the support substrate 510 and the carrier foil 520.
  • a metal layer 542 is formed on the metal foil 530.
  • the metal layer 542 is patterned by a normal method such as an SAP method.
  • the carrier substrate is peeled from the resin film with a carrier film. Then, the resin film is cured. These are repeated three times to form two build-up layers and one solder resist layer. Thereafter, the support substrate 510 is peeled off as shown in FIG. Then, the metal foil 530 is removed by etching or the like. Thus, the printed wiring board 500 shown in FIG. 4C is obtained.
  • FIG. 5 is a cross-sectional view showing an example of the configuration of the printed wiring board 600.
  • a printed wiring board 600 shown in FIG. 5 may be composed of a coreless resin substrate 610 used in a PLP (panel level package) process.
  • PLP panel level package
  • a panel size package having a larger area than a wafer can be obtained by using a wiring board process.
  • the productivity of the semiconductor package can be improved more efficiently than the wafer level process.
  • the insulating layer 612 (interlayer insulating layer) and the insulating layers 630 and 632 (solder resist layer) of the coreless resin substrate 610 are configured by an insulating layer formed of a cured product of the resin film of the present embodiment. May be. Since the cured product of the resin film of this embodiment is excellent in toughness, it effectively suppresses warpage of the printed wiring board 600 and cracks of the coreless resin board 610 especially during transportation and mounting during the PLP process. be able to.
  • the printed wiring board 600 of the present embodiment has a large area in which a plurality of semiconductor elements (not shown) can be mounted in the plane. Then, after sealing a plurality of semiconductor elements mounted in the in-plane direction of the printed wiring board 600 together, a plurality of semiconductor packages can be obtained by separating them into individual pieces. In this embodiment, since the linear expansion coefficient of the cured product of the resin film can be lowered, package warpage can be suppressed in the semiconductor package obtained by the PLP process.
  • the printed wiring board 600 can include a coreless resin substrate 610 and a solder resist layer (insulating layers 630 and 632) formed on the surface thereof.
  • the coreless resin substrate 610 may have a built-in semiconductor element 620.
  • the semiconductor element 620 can be electrically connected through the via wiring 616.
  • the coreless resin substrate 610 can have at least an insulating layer 612 (interlayer insulating layer) and a via wiring 616. Via the via wiring 616, the lower metal layer 640 (electrode pad) and the upper metal layer 618 (post) can be electrically connected. Further, the via wiring 616 can be connected to the metal layer 640 via the metal layer 614 (post), for example.
  • the coreless resin substrate 610 In the coreless resin substrate 610, a via wiring 616 and a metal layer 614 are embedded.
  • the metal layer 614 that is a post may have a surface that is flush with the surface of the coreless resin substrate 610.
  • the coreless resin substrate 610 is configured by a single interlayer insulating layer, but is not limited to this configuration, and has a structure in which a plurality of interlayer insulating layers are stacked. May be.
  • at least a via wiring 616 may be formed as an interlayer connection wiring.
  • the via wiring 616, the metal layer 614, or the metal layer 618 may be made of a metal such as copper, for example.
  • the upper and lower surfaces of the coreless resin substrate 610 may be covered with a solder resist layer (insulating layers 630 and 632).
  • the insulating layer 630 can cover the metal layer 650 formed on the surface of the insulating layer 612.
  • the metal layer 650 includes a first metal layer 652 (plating layer) and a second metal layer 654 (electroless plating layer), and may be a metal layer formed by the SAP method, for example.
  • the metal layer 650 may be, for example, a circuit pattern or an electrode pad.
  • the manufacturing method of the printed wiring board 600 of this embodiment is not specifically limited, For example, the following methods can be used.
  • the insulating layer 612 is formed over the supporting substrate.
  • a via is formed in the insulating layer 612, and a via wiring 616 in which a metal film is embedded in the via by a plating method is formed.
  • a rewiring (metal layer 650) is formed on the surface of the insulating layer 612 by the SAP method.
  • a plurality of interlayer insulating layers having such interlayer connection wirings may be stacked.
  • solder resist layers solder resist layers (insulating layers 630 and 632) are formed.
  • the printed wiring board 600 can be obtained.
  • FIG. 6 is a cross-sectional view showing an example of the configuration of the printed wiring board 700.
  • a printed wiring board 700 shown in FIG. 6 can be formed of a substrate with a post (MIS substrate).
  • the post-attached substrate can be constituted by a coreless resin substrate 710 having a structure in which a via wiring 716 and a metal layer 718 (post) are embedded in an insulating layer 712 (interlayer insulating layer).
  • the post-attached substrate may be a substrate after being singulated or a substrate having a large area before being singulated (for example, a support like a wafer).
  • the productivity of the semiconductor package can be efficiently improved to the same level as or higher than that of the wafer level process.
  • the insulating layer 712 (interlayer insulating layer) and the insulating layers 730 and 732 (solder resist layer) of the coreless resin substrate 710 are configured by insulating layers formed of a cured product of the resin film of the present embodiment. May be. Since the cured product of the resin film of this embodiment is excellent in toughness, it is possible to effectively suppress warpage of the printed wiring board 700 and particularly cracks of the coreless resin substrate 710 during transportation and mounting.
  • the printed wiring board 700 of the present embodiment has a large area in which a plurality of semiconductor elements (not shown) can be mounted in the plane. Then, after sealing a plurality of semiconductor elements mounted in the in-plane direction of the printed wiring board 700 together, a plurality of semiconductor packages can be obtained by separating them into individual pieces. Since the linear expansion coefficient of the cured product of the resin film of this embodiment can be lowered, package warpage can be suppressed in the obtained semiconductor package.
  • the printed wiring board 700 can include a coreless resin substrate 710 and a solder resist layer (insulating layers 730 and 732) formed on the surface thereof.
  • the coreless resin substrate 710 may have a built-in semiconductor element 720.
  • the semiconductor element 720 can be electrically connected through the via wiring 716.
  • the coreless resin substrate 710 can include at least an insulating layer 712 (interlayer insulating layer), a via wiring 716, and a metal layer 718 (post).
  • the metal layer 714 (post) on the lower surface and the metal layer 718 (post) on the upper surface can be electrically connected via the via wiring 716.
  • the metal layer 714 embedded in the insulating layer 712 can be connected to a metal layer 740 (electrode pad) formed on the surface of the insulating layer 712. Further, the surface of the insulating layer 712 may have a polished surface. One surface of the metal layer 718 may be flush with the polished surface of the insulating layer 712.
  • the coreless resin substrate 710 is configured by a single interlayer insulating layer, but is not limited to this configuration, and has a structure in which a plurality of interlayer insulating layers are stacked. May be.
  • a via wiring 716 and a metal layer 718 (post) may be formed as an interlayer connection wiring.
  • the via wiring 716, the metal layer 714, or the metal layer 718 may be made of a metal such as copper, for example.
  • the upper and lower surfaces of the coreless resin substrate 710 may be covered with a solder resist layer (insulating layers 730 and 732).
  • the manufacturing method of the printed wiring board 700 of this embodiment is not specifically limited, For example, the following methods can be used.
  • a copper post eg, a metal layer 7178 is formed over the insulating layer over the support substrate.
  • a copper post is further embedded with an insulating layer.
  • the surface of the copper post is exposed by a method such as grinding or chemical etching (that is, cueing of the copper post is performed).
  • rewiring is formed by the SAP method.
  • the coreless resin substrate 710 having an interlayer insulating layer can be formed.
  • interlayer insulating layers having interlayer connection wirings may be stacked by repeating the step of forming the interlayer insulating layer a plurality of times. Thereafter, solder resist layers (insulating layers 730 and 732) are formed. Thus, the printed wiring board 700 can be obtained.
  • thermosetting resin composition (Preparation of thermosetting resin composition) About the Example and the comparative example, the varnish-like thermosetting resin composition was prepared. First, each component was dissolved or dispersed at a solid content ratio shown in Table 1, and the resin varnish was prepared by stirring with a high-speed stirring device so that the nonvolatile content was 70% by weight with methyl ethyl ketone. In addition, the numerical value which shows the mixture ratio of each component in Table 1 has shown the mixture ratio (weight%) of each component with respect to the whole solid content of a thermosetting resin composition.
  • Thermosetting resin 1 fluorene type epoxy resin (EG-280, manufactured by Osaka Gas Chemical Co., Ltd., liquid at 25 ° C., viscosity 6 Pa ⁇ s, epoxy equivalent 460 g / eq)
  • Thermosetting resin 2 bisphenol A type epoxy resin (EXA-4850-150, manufactured by DIC, liquid at 25 ° C., viscosity 15 Pa ⁇ s, epoxy equivalent 450 g / eq)
  • Thermosetting resin 3 polyether type epoxy resin (AER-9000, manufactured by Asahi Kasei Corporation, liquid at 25 ° C., viscosity 1 Pa ⁇ s, epoxy equivalent 380 g / eq)
  • Thermosetting resin 4 Bisphenol F type epoxy resin (EPICLON, 830S, manufactured by DIC, viscosity 3.8 Pa
  • Phenoxy resin 1 Phenoxy resin (YX6954, manufactured by Mitsubishi Chemical Corporation, Mw: 40,000)
  • Phenoxy resin 2 Phenoxy resin (YX6900, manufactured by Mitsubishi Chemical Corporation, Mw: 15,000) (Other)
  • Curing agent 1 phenolic curing agent (phenol novolac resin, HF-3, manufactured by Sumitomo Bakelite Co., Ltd.)
  • Curing agent 2 Phenolic curing agent (manufactured by Nippon Kayaku Co., Ltd., GPH-103)
  • Curing agent 3 Amine-based curing agent (diethyltoluenediamine, manufactured by Mitsui Chemicals Fine, DETDA)
  • Curing agent 4 Cata
  • the two-stage vacuum pressurization method is performed after laminating the resin film with carrier obtained above (as an interlayer insulating film) on both sides so that the resin film faces the circuit pattern on the circuit board after the circuit pattern is formed.
  • a laminator (MVLP-500, manufactured by Meiki Seisakusho Co., Ltd.)
  • temperature with SUS end plate as two stage condition Vacuum heating and pressure molding was performed at 120 ° C.
  • the resin film on the circuit pattern was cured at 200 ° C. for 2 hours.
  • circuit processing was performed by a semi-additive method, and the resin film with carrier obtained above (as a solder resist layer) was similarly laminated on both sides, and laser-opened to obtain a printed wiring board.
  • Storage elastic modulus E ′ The storage elastic modulus E ′ was measured using a dynamic viscoelasticity measuring device (DMA device, manufactured by TA Instruments, Q800). A test piece of 8 mm ⁇ 40 mm was cut out from the obtained cured product. With respect to the cut out test piece, the storage elastic modulus at 30 ° C. was measured at a heating rate of 5 ° C./min and a frequency of 1 Hz, and the storage elastic modulus E ′ 30 at 30 ° C. was calculated.
  • DMA device dynamic viscoelasticity measuring device
  • the obtained cured product was cut into a test piece having a length of 100 mm and a width of 6 mm.
  • the test piece was sandwiched between chucks arranged at a constant distance, and evaluation was performed by pulling at a constant speed until the test piece broke.
  • initial chuck distance L 20 mm
  • test piece thickness 0.1 mm
  • measurement temperature 25 ° C.
  • test speed 1 mm
  • the conditions per minute were used.
  • the tensile elongation rate (%) was calculated from the amount of displacement when fractured under the above conditions and the initial inter-chuck distance.
  • thermomechanical analyzer TMA TA Instrument Co., Ltd., Q400
  • Thermomechanical analysis (TMA) was measured for 2 cycles.
  • the average value of the linear expansion coefficient in the plane direction (XY direction) in the range of 50 ° C. to 250 ° C. was calculated.
  • the value of the 2nd cycle was employ
  • Glass transition temperature, loss tangent tan ⁇ A test piece of 8 mm ⁇ 40 mm was cut out from the obtained cured product. Dynamic viscoelasticity measurement was performed on the cut out test piece at a temperature rising rate of 5 ° C./min and a frequency of 1 Hz. The glass transition temperature and loss tangent tan ⁇ were measured by dynamic viscoelasticity measurement (DMA device, manufactured by TA Instruments, Q800). Here, the glass transition temperature was a temperature at which the loss tangent tan ⁇ showed the maximum value. Further, the half value width was calculated from the peak value of the obtained loss tangent tan ⁇ .
  • DMA device dynamic viscoelasticity measurement
  • the obtained cured product was used as a sample test plate.
  • the sample thickness of the sample test plate was 100 ⁇ m.
  • This sample test plate was bent at 180 ° C. along a support rod having a predetermined diameter, and the presence or absence of breakage was evaluated. Then, the diameter was gradually reduced, and the minimum diameter that did not break was defined as the minimum diameter shown in Table 2. However, the smallest diameter that can be evaluated is 2 mm.
  • a 12 ⁇ m copper foil is placed on a support substrate of length 250 mm ⁇ width 250 mm square SUS, and a resin film with a carrier film obtained in Examples and Comparative Examples is a two-stage vacuum / pressure laminator (manufactured by Meiki Seisakusho, MVLP-500), decompressed for 30 seconds, 10 hPa or less, temperature 120 ° C., pressure 0.8 MPa, 30 seconds as 1 stage condition, temperature 120 ° C., pressure 1.0 MPa, 60 with 2 stage conditions as SUS end plate Vacuum heating and pressure forming was performed in seconds.
  • the carrier substrate was peeled from the resin film with carrier, and then cured at 180 ° C. for 2 hours.
  • thermosetting resin compositions of Examples 1 to 8 showed excellent results with respect to panel warpage and handling properties and were excellent in toughness.
  • the insulating layers formed of the thermosetting resin compositions of Comparative Examples 1 to 4 did not have sufficient toughness.
  • Comparative Example 3 even when the tensile elongation percentage of the cured product of the thermosetting resin composition is 2% or more, when the storage elastic modulus E ′ of the cured product is larger than 10 GPa, the panel It turned out that curvature became large and it did not have sufficient toughness.
  • the thermosetting resin composition of the present invention includes a thermosetting resin, a curing agent, and an inorganic filler.
  • the cured product has a storage elastic modulus E ′ 30 at 30 ° C. and a tensile elongation of the cured product. The rate is within the predetermined range described above.
  • the insulating film formed using the thermosetting resin composition of the present invention having such characteristics exhibits excellent toughness by achieving both low elasticity and high elongation. Therefore, because it is excellent in toughness when used in such an insulating layer, warpage of the panel (coreless substrate) and substrate cracks during transportation and mounting during the panel level process of manufacturing a large panel size package. Can be suppressed. Therefore, the present invention has industrial applicability.

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Abstract

La composition de résine thermodurcissable selon la présente invention est destinée à être utilisée dans la formation d'une couche isolante d'une carte de circuit imprimé, et comprend une résine thermodurcissable, un durcisseur et une charge inorganique. La composition de résine thermodurcissable donne un objet durci qui, dans un examen de viscoélasticité dynamique, a un module de stockage de 30 °C E'30 de 1 à 10 GPa et qui, dans un essai de traction, a un allongement à la traction supérieur ou égal à 2 %. Il est préférable que la teneur de la charge inorganique dans la composition de résine thermodurcissable soit de 65 à 90 % en poids par rapport à la composition totale de résine thermodurcissable.
PCT/JP2017/022627 2016-06-28 2017-06-20 Composition de résine thermodurcissable, film de résine avec support, carte de circuit imprimé et dispositif à semi-conducteur WO2018003590A1 (fr)

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JPWO2020195236A1 (fr) * 2019-03-27 2020-10-01
KR20220002080A (ko) * 2020-06-30 2022-01-06 (주)이녹스첨단소재 전자장치 제조용 절연필름
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JP2020084110A (ja) * 2018-11-29 2020-06-04 信越化学工業株式会社 エポキシ樹脂組成物、多層プリント配線板、及び半導体装置
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WO2020195236A1 (fr) * 2019-03-27 2020-10-01 三井金属鉱業株式会社 Composition de résine, feuille de cuivre doté la résine, couche diélectrique, stratifié plaqué de cuivre, élément condensateur, et panneau de circuit imprimé avec condensateur intégré
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KR20220002080A (ko) * 2020-06-30 2022-01-06 (주)이녹스첨단소재 전자장치 제조용 절연필름
KR102516291B1 (ko) 2020-06-30 2023-03-31 (주)이녹스첨단소재 전자장치 제조용 절연필름
WO2023190221A1 (fr) * 2022-03-28 2023-10-05 株式会社タムラ製作所 Composition de résine thermodurcissable, produit durci de composition de résine thermodurcissable et photorésine de soudure formée à partir d'une composition de résine thermodurcissable
CN115044173A (zh) * 2022-07-11 2022-09-13 中山超分子新材料有限公司 一种耐腐蚀的高弹复合纤维及其制备方法

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