WO2017181636A1 - 高效制备掺杂光纤预制棒的方法及掺杂光纤预制棒 - Google Patents

高效制备掺杂光纤预制棒的方法及掺杂光纤预制棒 Download PDF

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WO2017181636A1
WO2017181636A1 PCT/CN2016/102796 CN2016102796W WO2017181636A1 WO 2017181636 A1 WO2017181636 A1 WO 2017181636A1 CN 2016102796 W CN2016102796 W CN 2016102796W WO 2017181636 A1 WO2017181636 A1 WO 2017181636A1
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doped
optical fiber
fiber preform
doped optical
quartz powder
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PCT/CN2016/102796
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English (en)
French (fr)
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杜城
罗文勇
严垒
张涛
陈超
柯一礼
孔明
张洁
刘志坚
刘立峰
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烽火通信科技股份有限公司
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Priority to EP16899220.4A priority Critical patent/EP3447035B1/en
Priority to KR1020187015598A priority patent/KR102117174B1/ko
Priority to JP2018546731A priority patent/JP6686162B2/ja
Priority to SG11201804249PA priority patent/SG11201804249PA/en
Priority to AU2016403543A priority patent/AU2016403543B2/en
Priority to ES16899220T priority patent/ES2863649T3/es
Priority to US15/769,342 priority patent/US10689287B2/en
Priority to RU2018119375A priority patent/RU2712906C1/ru
Priority to MYPI2018701681A priority patent/MY192429A/en
Priority to CA3003761A priority patent/CA3003761C/en
Publication of WO2017181636A1 publication Critical patent/WO2017181636A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01838—Reactant delivery systems, e.g. reactant deposition burners for delivering and depositing additional reactants as liquids or solutions, e.g. for solution doping of the deposited glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
    • C03B37/01225—Means for changing or stabilising the shape, e.g. diameter, of tubes or rods in general, e.g. collapsing
    • C03B37/01248—Means for changing or stabilising the shape, e.g. diameter, of tubes or rods in general, e.g. collapsing by collapsing without drawing
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    • C03—GLASS; MINERAL OR SLAG WOOL
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    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/0128—Manufacture of preforms for drawing fibres or filaments starting from pulverulent glass
    • C03B37/01291—Manufacture of preforms for drawing fibres or filaments starting from pulverulent glass by progressive melting, e.g. melting glass powder during delivery to and adhering the so-formed melt to a target or preform, e.g. the Plasma Oxidation Deposition [POD] process
    • C03B37/01294—Manufacture of preforms for drawing fibres or filaments starting from pulverulent glass by progressive melting, e.g. melting glass powder during delivery to and adhering the so-formed melt to a target or preform, e.g. the Plasma Oxidation Deposition [POD] process by delivering pulverulent glass to the deposition target or preform where the powder is progressively melted, e.g. accretion
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C03B37/01823—Plasma deposition burners or heating means
    • C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01861—Means for changing or stabilising the diameter or form of tubes or rods
    • C03B37/01869—Collapsing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
    • C03B2201/28—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/31—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with germanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/34—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/34—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers
    • C03B2201/36—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with rare earth metals, i.e. with Sc, Y or lanthanides, e.g. for laser-amplifiers doped with rare earth metals and aluminium, e.g. Er-Al co-doped
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/50—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with alkali metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/54—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with beryllium, magnesium or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/58—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with metals in non-oxide form, e.g. CdSe
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
    • C03B37/01225—Means for changing or stabilising the shape, e.g. diameter, of tubes or rods in general, e.g. collapsing
    • C03B37/01228—Removal of preform material
    • C03B37/01237—Removal of preform material to modify the diameter by heat-polishing, e.g. fire-polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the invention relates to the field of optical fiber preforms, in particular to a method for efficiently preparing a doped optical fiber preform and a doped optical fiber preform.
  • Fiber laser technology can introduce higher quality and precision into the value chain, and is an important means to promote the upgrading of the industrial structure of the manufacturing industry.
  • fiber lasers have become one of the mainstream lasers due to their high conversion efficiency, good heat dissipation performance and stability. Similar to other diode-pumped lasers, fiber lasers use pump light to create high power density in the fiber, causing the laser energy level of the laser working substance to “reverse the number of particles”, and appropriately adding a positive feedback loop (constituting the resonant cavity). A laser oscillation output can be formed. Fiber lasers essentially convert low-quality pump lasers into higher-quality laser outputs that can be used in medical, material processing, and laser weapons.
  • the key factor determining the laser characteristics of fiber lasers is the rare earth doped fiber as the core component of fiber lasers.
  • the preparation technology of rare earth doped fiber preforms mainly includes loose layer liquid phase doping method, sol-gel method, high temperature flash method, direct nanoparticle deposition method, etc., but current process technology is difficult to avoid uniform doping of rare earth ions in optical fibers. Poor sex, excessive impurities and other issues.
  • the core diameter of the optical fiber preform and the rare earth ion doping concentration are at a low level, resulting in high cost of the laser fiber, increasing the difficulty of use and system debugging, and it is difficult to meet the commercialization and industrialization of the fiber laser. Claim.
  • the manufacturing process of the rare earth doped optical fiber preform in the prior art mainly adopts a loose layer liquid phase doping method, a sol-gel method, and a small amount of experimental research applied high temperature flashing method, direct nano Rice particle deposition method.
  • the sol-gel method and the high-temperature flash method have higher requirements and the process is more complicated, while the direct nanoparticle deposition method has higher requirements on raw materials, which is not conducive to large-scale production.
  • the liquid phase doping method of the loose layer is the most widely used. It is to deposit a loose core layer on the inner surface of the quartz deposition tube, and then soak the loose core layer in the solution containing the rare earth element, so that the rare earth element in the solution is adsorbed on the loose core.
  • the deposition tube is then placed on a sintering apparatus to dry the loose core layer with an inert gas, and then the loose core layer is sintered into a glass layer, and finally the deposition tube is melted into a solid preform.
  • the liquid phase doping method of the loose layer is complicated, and the multi-turn deposition is required to realize the doped core structure conforming to the drawing requirement, and the device needs to be separated from the sealing device between the processes of deposition, immersion, drying, etc., and impurities are easily introduced, which affects the rare earth doping.
  • Optical fiber core laser performance; simultaneous liquid phase doping method has different local immersion effects, it is difficult to overcome the problem of longitudinal doping unevenness of the preform, which will lead to differences in the longitudinal absorption coefficient of the rare earth doped fiber, which is not conducive to nonlinear effect control and batching. use.
  • the above four methods are limited by the space inside the reaction tube, and the prepared rare earth doped fiber core has a small core size, and the fiber that can be drawn in a single batch is very limited, resulting in high unit cost of the optical fiber, and it is difficult to meet the high uniformity of the laser market.
  • the demand for rare earth fibers is limited by the space inside the reaction tube, and the prepared rare earth doped fiber core has a small core size, and the fiber that can be drawn in a single batch is very limited, resulting in high unit cost of the optical fiber, and it is difficult to meet the high uniformity of the laser market. The demand for rare earth fibers.
  • metal ion doped fibers such as high-attenuation fibers
  • high-attenuation fibers are the core materials of optoelectronic devices such as fiber attenuators.
  • optoelectronic devices such as fiber attenuators.
  • Similar to laser fiber technology only Canada's Coractive Company and South Korea's OptoNet Company have high-attenuation fiber doping technology. This technology is a loose layer liquid phase doping method, which has poor doping uniformity and optical fiber preform core diameter. Dimensional process limitations lead to problems such as low production efficiency.
  • the object of the present invention is to overcome the deficiencies of the above background art, and to provide a method for efficiently preparing a doped optical fiber preform and a doped optical fiber preform.
  • the method is simple in process, can effectively reduce impurity introduction, and improve the blending of optical fiber preforms. Heterogeneity; the method Breaking the size limit of the doped core caused by the deposition in the tube can significantly improve the production efficiency of the doped optical fiber preform, reduce the development cost of the laser fiber, and meet the industrialization requirements of the laser fiber and the special communication device fiber.
  • the invention provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • the rare earth material or the functional metal material and the co-doping agent are mixed according to a certain ratio, and the solvent is added to prepare a doping solution; the high-purity quartz powder with a purity of 99% or more is mixed with the doping solution, and the mixture is uniformly stirred to obtain doping.
  • the precursor is prepared by drying the doped precursor at a temperature of 100 ° C to 150 ° C for 12 to 48 hours, pulverizing, and screening with a mesh sieve having a mesh size of more than 150 mesh to obtain a doped quartz powder;
  • the rare earth material is at least one of compounds of ruthenium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium, iridium, osmium.
  • the rare earth material is at least one of barium chloride, barium chloride, and barium chloride.
  • the functional metal material is at least one of compounds of cobalt, iron, calcium, potassium, magnesium, vanadium, niobium and tantalum.
  • the functional metal material is cobalt chloride and/or chlorine. Iron.
  • the co-doping agent is at least one of aluminum chloride, barium chloride, and ferric chloride.
  • the high-purity quartz powder has a particle size of less than 100 ⁇ m.
  • the other gaseous co-admixture is hexafluoroethane or phosphorus oxychloride.
  • the solvent in the step S1 is water or ethanol.
  • the invention also provides a doped optical fiber preform which is prepared by the above method.
  • the refractive index of the doped core layer is higher than the refractive index of the outer cladding of the quartz, and the percentage of the refractive index difference is 0.1% to 1.2%.
  • the cross-sectional area ratio of the outer cladding layer of the quartz to the doped core layer is 3.0 to 1275.5.
  • doping uniformity is a very critical performance of fiber.
  • the invention adopts the method of coating the dopant on the surface of the high-purity quartz powder particle to prepare the doped precursor, and the dopant is fully contacted with the high-purity quartz powder particle as the fiber deposition matrix material to realize the rare earth ion or the functional metal ion.
  • High concentration doping The method is suitable for co-doping of various dopants, can effectively avoid the difference of microporous permeability of various co-mixing agents and dopants in the conventional process, and the difference of solution concentration in the soaking process caused by gravity factors, and improve the axial direction. Doping uniformity.
  • the invention utilizes a high-frequency plasma external spray deposition technique to deposit a doped precursor on a target rod, avoiding a complicated multi-turn deposition doping process, effectively reducing impurity introduction, and fundamentally improving rare earth in the optical fiber preform.
  • the method belongs to the extra-pipe deposition technology, and the production process is simple, which can break through the doping core size limitation of the in-pipe deposition technology, significantly improve the production efficiency of the rare earth doped fiber preform, reduce the development cost of the laser fiber, and realize the low cost of the doped fiber preform. High-efficiency and large-scale production, in line with the industrialization requirements of laser fiber and special communication devices.
  • the present invention uses a high-purity quartz powder particle surface coated with a dopant to prepare a doped precursor, combined with high-frequency plasma external spray deposition technology, can achieve high rare earth or functional metal ions in the optical fiber preform.
  • Doping concentration increases the uniformity of axial doping; this method can reduce the development cost of doped fiber, and the core diameter of the prepared doped fiber preform is not limited, and realize high value-added special fiber such as laser fiber and high attenuation fiber.
  • FIG. 1 is a flow chart of preparing a doped optical fiber preform according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing a deposition process of a doped optical fiber preform in an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a deposition process after completion of the embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a doped optical fiber preform after melting in an embodiment of the present invention.
  • FIG. 5 is a schematic structural view of an end face of a doped optical fiber according to an embodiment of the present invention.
  • Reference numerals 1 - target rod, 2 - doped core layer, 3 - quartz outer cladding.
  • an embodiment of the present invention provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • the rare earth material may be at least one of compounds of cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, for example, cerium chloride or cerium chloride.
  • the functional metal material may be at least one of a compound of cobalt, iron, calcium, potassium, magnesium, vanadium, niobium and tantalum, for example, cobalt chloride and/or chlorine Iron
  • the co-admixing agent may be at least one of aluminum chloride, barium chloride, and ferric chloride
  • the solvent may be water or ethanol;
  • the high-purity quartz powder with a purity of 99% or more is screened by a metal mesh having a mesh size of 150 to 400 mesh, and the high-purity quartz powder under the sieve is an ultrafine high-purity quartz powder having a particle size of less than 100 ⁇ m.
  • the ultrafine high-purity quartz powder and the doping solution are uniformly mixed according to a volume ratio of 0.2 to 7.0, and rapidly stirred by mechanical equipment to form a doped precursor;
  • the target rod 1 is installed in a plasma external spray deposition apparatus, and the doped quartz powder, oxygen gas and/or other gaseous co-blends are simultaneously introduced into the plasma heating zone to make the doped quartz.
  • the powder is deposited on the surface of the target rod 1 according to a certain ratio to form a doped core layer 2; the other gaseous co-admixture may be hexafluoroethane or phosphorus oxychloride;
  • the doping of the quartz powder is stopped, and only the high-purity quartz powder, oxygen, and/or other gaseous co-blends are selectively introduced.
  • the high purity quartz powder is deposited on the surface of the doped core layer 2 according to a certain ratio to form a quartz outer cladding layer 3;
  • the target rod 1 is removed by a drilling process, and the whole formed by the doped core layer 2 and the quartz outer cladding layer 3 is obtained, the inner wall is cleaned, and then flame polishing is performed.
  • the whole formed by the doped core layer 2 and the quartz outer cladding 3 is gradually melted under a high temperature of 900 ° C to 1800 ° C under controlled pressure to form a doped optical fiber preform as shown in FIG. 4 .
  • Embodiments of the present invention provide a doped optical fiber preform prepared by the above method.
  • the refractive index of the doped core layer 2 is higher than that of the quartz outer cladding 3, and the percentage of the refractive index difference is 0.1% to 1.2%, and the transverse direction of the quartz outer cladding 3 and the doped core layer 2
  • the cross-sectional area ratio is 3.0 to 1275.5.
  • the doped fiber preform is drawn into a doped fiber and tested.
  • the specific process is as follows:
  • the doped optical fiber preform is processed into a desired shape, and melted in a high temperature furnace of a drawing tower at 1800 ° C to 2200 ° C, and is drawn at a drawing speed of 1.5 m/min to 2200 m/min and a drawing tension of 25 g to 200 g.
  • Model doped fiber Referring to FIG. 5, the doped fiber includes a core arranged in order from the inside to the outside (see the black circular area in FIG. 5), a fiber cladding, an undercoat layer, and an overcoat layer.
  • This embodiment provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • cerium chloride hydrate crystal powder 737.28 g of cerium chloride hydrate crystal powder, 51.72 g of anhydrous aluminum chloride crystal powder, and 71.42 g of cerium chloride hydrate crystal powder were mixed, and after stirring uniformly, deionized water was slowly added to the mixture. After the mixture was completely dissolved, it was allowed to stand for 60 minutes. After the solution was cooled, it was filtered with a medium-speed filter paper. After the filtration was completed, the volume was adjusted to 6000 ml to obtain a doping solution.
  • the ultrafine high-purity quartz powder and the doping solution under a mesh sieve having a mesh size of 200 mesh are uniformly mixed in a volume ratio of 1:5, and rapidly stirred by a mechanical device to form a doped precursor; After the body is dried at 150 ° C for 12 hours, it is subjected to Mechanically pulverized and ground, and screened with a mesh mesh of 200 mesh, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut by a plasma external spray deposition apparatus, and oxygen having a flow rate of 8000 ml/min and phosphorus oxychloride having a flow rate of 500 ml/min are simultaneously introduced into the plasma heating zone.
  • the doped quartz powder is deposited on the target rod 1 according to a set ratio to form a doped core layer 2 with a deposition area of 314.16 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut and passed only The high-purity quartz powder and the flow rate of 12000 ml/min of oxygen are deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125349.50 mm 2 . After the deposition process is completed, the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then subjected to flame polishing, and then subjected to pressure control under a high temperature of 1,700 ° C to gradually melt to form an erbium-doped optical fiber preform.
  • the erbium-doped optical fiber preform is processed into a regular octagonal structure, melted at 1950 ° C in a high temperature furnace of a drawing tower, drawn at a drawing speed of 25 m/min, and drawn at a tensile tension of 150 g to form a cladding diameter of 402 ⁇ m.
  • the main indicators of the fiber test are shown in Table 1.
  • This embodiment provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • the ultrafine high-purity quartz powder under the mesh sieve of 200 mesh is uniformly mixed with the doping solution according to a volume ratio of 6:1, and rapidly stirred by mechanical equipment to form a doped precursor; the doping precursor is doped After the body was dried at 150 ° C for 48 hours, it was mechanically pulverized and ground, and sieved with a mesh mesh of 150 mesh, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut off by a plasma external spray deposition apparatus, and simultaneously a flow rate of 9500 ml/min of oxygen and a flow rate of 70 ml/min of hexafluoroethane are introduced into the plasma heating zone.
  • the doped quartz powder is deposited on the target rod 1 according to a set ratio to form a doped core layer 2 with a deposition area of 490.87 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut and passed only The high-purity quartz powder and the flow rate of 12000 ml/min of oxygen are deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125172.80 mm 2 . After the deposition process is completed, the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then subjected to flame polishing, and then subjected to pressure control under a high temperature of 1750 ° C to gradually melt to form an erbium-doped optical fiber preform.
  • the erbium-doped optical fiber preform is processed into a regular octagonal structure, melted at 2100 ° C in a high temperature furnace of a drawing tower, drawn at a drawing speed of 12 m/min, and drawn at a tensile tension of 80 g to form a cladding diameter of 401 ⁇ m.
  • the main indicators of the fiber test are shown in Table 2.
  • This embodiment provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • the ultrafine high-purity quartz powder under the mesh of 200 mesh is uniformly mixed with the doping solution according to a volume ratio of 7:1, and rapidly stirred by mechanical equipment to form a doped precursor; the doping precursor is doped After the body was dried at 100 ° C for 48 hours, it was mechanically pulverized and ground, and screened with a mesh mesh of 300 mesh, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually discharged by a plasma external spray deposition apparatus, and oxygen having a flow rate of 8200 ml/min is simultaneously introduced into the plasma heating zone, so that the doped quartz powder is deposited according to a set ratio.
  • a doped core layer 2 is formed, and the deposition area is 63.62 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut, and only the high-purity quartz powder is introduced, and the flow rate is 12000 ml/
  • the oxygen of min is deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 12208.23 mm 2 .
  • the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then flame polished, and then 1500 ° C high temperature under pressure control, and gradually melted to form a high-attenuation optical fiber preform.
  • the high-attenuation optical fiber preform is drawn into an optical fiber and tested.
  • the specific process is as follows:
  • the high-attenuation optical fiber preform is processed into a regular octagonal structure, melted at 2200 ° C in a high temperature furnace of a drawing tower, drawn at a drawing speed of 1700 m/min, and drawn at a tensile tension of 180 g.
  • the cladding has a diameter of 125.2 ⁇ m and a coating diameter of 246 ⁇ m.
  • the main indicators of the fiber test are shown in Table 3.
  • This embodiment provides a method for efficiently preparing a doped optical fiber preform, comprising the following steps:
  • the ultrafine high-purity quartz powder under the mesh of 200 mesh is uniformly mixed with the doping solution according to a volume ratio of 1:1, and rapidly stirred by mechanical equipment to form a doped precursor; the doping precursor is doped After the body was dried at a high temperature of 120 ° C for 24 hours, it was mechanically pulverized and ground, and sieved with a mesh net of 200 mesh, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut by a plasma external spray deposition apparatus, and simultaneously introduced into the plasma heating zone at a flow rate of 9500 ml/min, so that the doped quartz powder is deposited on the target according to a set ratio.
  • a doped core layer 2 is formed, and the deposition area is 314.16 mm 2 ; after the deposition of the doped core layer 2, the doped quartz powder is cut, and only the high-purity quartz powder is introduced, and the flow rate is 12000 ml/min.
  • the oxygen is deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125,349.50 mm 2 .
  • the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material. Clean the inner wall of the cylindrical material, then perform flame polishing, and then use the high temperature of 1700 ° C under controlled pressure to gradually melt and form a erbium co-doped optical fiber preform. On this basis, the sleeve processing is performed to realize the cross-section fiber of the optical fiber preform.
  • the ratio of core diameter to cladding diameter is 1:43.72.
  • the erbium co-doped optical fiber preform was melted at 1950 ° C in a high temperature furnace of a drawing tower, and drawn at a drawing speed of 70 m/min and a drawing tension of 120 g to form a coating having a cladding diameter of 125 ⁇ m and a coating diameter of 245 ⁇ m.
  • ⁇ fiber ⁇ co-doped fiber
  • the ultrafine high-purity quartz powder under a mesh sieve having a mesh size of 150 mesh is uniformly mixed with the doping solution in a volume ratio of 1:5, and rapidly stirred by a mechanical device to form a doped precursor; After the body was dried at 150 ° C for 12 hours, it was mechanically pulverized and ground, and sieved with a mesh mesh of 150 mesh.
  • the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut by a plasma external spray deposition apparatus, and oxygen having a flow rate of 8000 ml/min and phosphorus oxychloride having a flow rate of 500 ml/min are simultaneously introduced into the plasma heating zone.
  • the doped quartz powder is deposited on the target rod 1 according to a set ratio to form a doped core layer 2 with a deposition area of 314.16 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut and passed only The high-purity quartz powder and the flow rate of 12000 ml/min of oxygen are deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125349.50 mm 2 . After the deposition process is completed, the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then subjected to flame polishing, and then tempered to form an erbium-doped optical fiber preform by using a high temperature of 900 ° C under controlled pressure.
  • the ultrafine high-purity quartz powder under the mesh sieve of 400 mesh is uniformly mixed with the doping solution in a volume ratio of 1:5, and rapidly stirred by mechanical equipment to form a doped precursor; After the body was dried at 150 ° C for 12 hours, it was mechanically pulverized and ground, and screened with a mesh mesh of 400 mesh, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut by a plasma external spray deposition apparatus, and oxygen having a flow rate of 8000 ml/min and phosphorus oxychloride having a flow rate of 500 ml/min are simultaneously introduced into the plasma heating zone.
  • the doped quartz powder is deposited on the target rod 1 according to a set ratio to form a doped core layer 2 with a deposition area of 314.16 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut and passed only The high-purity quartz powder and the flow rate of 12000 ml/min of oxygen are deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125349.50 mm 2 . After the deposition process is completed, the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then subjected to flame polishing, and then subjected to pressure control under a high temperature of 1000 ° C to gradually melt to form an erbium-doped optical fiber preform.
  • Ultrafine high-purity quartz powder with a mesh size of 400 mesh and doping The solution is uniformly mixed according to a volume ratio of 1:5, and rapidly stirred by mechanical equipment to form a doped precursor; after the doped precursor is dried at 150 ° C for 12 hours, it is mechanically pulverized and ground. A number of 400 mesh metal mesh screens were screened, and the doped quartz powder under the sieve was taken as one of the deposition materials.
  • the doped quartz powder prepared by the above process is gradually cut by a plasma external spray deposition apparatus, and oxygen having a flow rate of 8000 ml/min and phosphorus oxychloride having a flow rate of 500 ml/min are simultaneously introduced into the plasma heating zone.
  • the doped quartz powder is deposited on the target rod 1 according to a set ratio to form a doped core layer 2 with a deposition area of 314.16 mm 2 ; after the deposition of the doped core layer 2 is completed, the doped quartz powder is cut and passed only The high-purity quartz powder and the flow rate of 12000 ml/min of oxygen are deposited on the outside of the doped core layer 2 to form a quartz outer cladding 3 with a deposition area of 125349.50 mm 2 . After the deposition process is completed, the target rod 1 is removed by a drilling process to obtain a whole formed by the doped core layer 2 and the quartz outer cladding layer 3.
  • the doped core layer 2 and the quartz outer cladding layer 3 are integrally formed as a hollow cylindrical material.
  • the inner wall of the cylindrical material is cleaned, then flame-polished, and then 1500 ° C high temperature under controlled pressure regulation, and gradually melted to form an erbium-doped optical fiber preform.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the crystal powder of lanthanum chloride hydrate having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the yttrium nitrate hydrate crystal powder having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 2 Except for the rare earth material and the yttrium nitrate hydrate crystal powder having a mass of 737.28 g, the others were the same as in Example 2.
  • Example 4 is the same.
  • Example 4 is the same.
  • Example 4 is the same.
  • the rare earth material and the mass thereof are 737.28 g of cerium chloride hydrate crystal powder, 458.40 g of cerium chloride hydrate crystal powder, 458.40 g of cerium chloride hydrate crystal powder, and 458.40 g of cerium chloride.
  • the hydrate crystal powder, the rest of the examples and examples 4 is the same.
  • the rare earth material and the mass thereof are 737.28 g of cerium chloride hydrate crystal powder, 458.40 g of cerium chloride hydrate crystal powder, 458.40 g of cerium chloride hydrate crystal powder, and 458.40 g of cerium chloride.
  • the remainder of the hydrate crystal powder was the same as in Example 4.
  • Example 3 is the same.
  • Example 3 except for the functional metal material and the calcium chloride hydrate crystal powder of 212.94 g, 212.94 g of ruthenium chloride hydrate crystal powder, and 212.94 g of vanadium chloride hydrate crystal powder, the rest are Example 3 is the same.
  • Example 3 except for the functional metal material and the calcium chloride hydrate crystal powder of 212.94 g, the crystal powder of 212.94 g of cobalt chloride hydrate, and the crystal powder of 212.94 g of ferric chloride hydrate, the rest are Example 3 is the same.
  • the functional metal material and the mass thereof are 212.94 g of calcium chloride hydrate crystal powder, 212.94 g of magnesium chloride hydrate crystal powder, 212.94 g of ruthenium chloride hydrate crystal powder, and 212.94 g of ruthenium chloride hydrate.
  • the remainder of the crystal powder was the same as in Example 3.

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Abstract

一种制备掺杂光纤预制棒的方法及掺杂光纤预制棒。该方法步骤如下：将稀土材料或功能金属材料与共掺剂配制成掺杂溶液，将高纯石英粉体与掺杂溶液混合，在100℃～150℃温度下烘干12～48小时，粉碎，筛选，得到掺杂石英粉体；将掺杂石英粉体沉积在靶棒(1)的表面，形成掺杂芯层(2)；将掺杂石英粉体替换为高纯石英粉体，使高纯石英粉体沉积在掺杂芯层的表面形成石英外包层(3)；去除靶棒(1)，将掺杂芯层(2)和石英外包层(3)形成的整体在高温下逐步熔缩，得到掺杂光纤预制棒。

Description

高效制备掺杂光纤预制棒的方法及掺杂光纤预制棒 技术领域
本发明涉及光纤预制棒领域，具体涉及一种高效制备掺杂光纤预制棒的方法及掺杂光纤预制棒。
背景技术
激光技术能将更高的质量和精度引入价值链，是促进制造业产业结构升级的重要手段。激光器应用领域中，光纤激光器以其高转换效率、良好散热性能和稳定性等特点，已成为主流激光器之一。类似于其他二极管泵浦的激光器，光纤激光器利用泵浦光的作用使光纤内形成高功率密度，造成激光工作物质的激光能级“粒子数反转”，适当加入正反馈回路(构成谐振腔)便可形成激光振荡输出。光纤激光器本质上是把低质量的泵浦激光转换为更高质量的激光输出，这些高质量的激光输出可应用于医疗、材料加工以及激光武器等诸多领域。
目前，决定光纤激光器激光特性的关键因素，是作为光纤激光器核心元器件的掺稀土光纤。掺稀土光纤预制棒的制备技术主要有疏松层液相掺杂法、溶胶-凝胶法、高温闪蒸法、直接纳米粒子沉积法等，但目前工艺技术都难以避免光纤中稀土离子掺杂均匀性不佳、杂质含量过高等问题。并且，由于工艺限制，光纤预制棒芯径尺寸与稀土离子掺杂浓度都处于较低水平，造成激光光纤成本高昂，同时增大了使用与系统调试难度，难以满足光纤激光器商用化与产业化的要求。
现有技术中掺稀土光纤预制棒的制造工艺主要采用疏松层液相掺杂法、溶胶-凝胶法，及少量实验研究应用的高温闪蒸法、直接纳 米粒子沉积法。其中溶胶-凝胶法、高温闪蒸法设备要求较高，工艺较复杂，而直接纳米粒子沉积法对于原材料要求较高，不利于规模化生产。目前疏松层液相掺杂法应用最为广泛，它是在石英沉积管内表面沉积疏松芯层，然后在含有稀土元素的溶液中浸泡所述的疏松芯层，使溶液中的稀土元素吸附在疏松芯层的孔隙中。再将沉积管置于在烧结装置上用惰性气体干燥所述疏松芯层，然后烧结所述的疏松芯层为玻璃层，最后将所述的沉积管熔缩为实心预制棒。
疏松层液相掺杂法工艺复杂，需要多趟沉积实现符合拉制需求的掺杂纤芯结构，在沉积、浸泡、干燥等工序之间需脱离密闭装置设备，极易引入杂质，影响掺稀土光纤纤芯激光性能；同时液相掺杂方式局部浸泡效果有差异，难以克服预制棒纵向掺杂不均的问题，会导致掺稀土光纤纵向吸收系数存在差异，不利于非线性效应控制与批量化使用。而且上述四种方法由于受到反应管材内空间限制，制备的掺稀土光纤纤芯尺寸较小，单批次能够拉制的光纤十分有限，导致光纤单位成本高昂，难以满足激光器市场对于高均匀性掺稀土光纤的需求。
在光通信领域，大量器件中还存在金属离子掺杂光纤，例如高衰减光纤，高衰减光纤是光纤衰减器等光电子器件的核心关键材料。与激光光纤技术类似，目前国际上仅有加拿大Coractive公司和韩国OptoNet公司具备高衰减光纤掺杂技术，该技术为疏松层液相掺杂法，存在掺杂均匀性不佳，光纤预制棒芯径尺寸工艺限制导致生产效率低等问题。
发明内容
本发明的目的是为了克服上述背景技术的不足，提供一种高效制备掺杂光纤预制棒的方法及掺杂光纤预制棒，该方法工艺简单，能够有效减少杂质引入，同时提高光纤预制棒的掺杂均匀性；该方法突 破了管内沉积造成的掺杂纤芯尺寸限制，能够显著提升掺杂光纤预制棒的生产效率，降低激光光纤研制成本，符合激光光纤和特种通信器件光纤产业化需求。
本发明提供一种高效制备掺杂光纤预制棒的方法，包括以下步骤：
S1、将稀土材料或功能金属材料与共掺剂按照一定比例混合，加入溶剂，配制成掺杂溶液；将纯度为99％以上的高纯石英粉体与掺杂溶液混合，搅拌均匀，得到掺杂前驱体；将掺杂前驱体在100℃～150℃温度下烘干12～48小时，粉碎，用目数大于150目的网筛进行筛选，得到掺杂石英粉体；
S2、将靶棒安装在等离子体外喷沉积设备中，将掺杂石英粉体、氧气和/或其它气态共掺物一同通入等离子体外喷沉积设备中的等离子体加热区，使掺杂石英粉体按照一定比例沉积在靶棒的表面，形成掺杂芯层；停止通入掺杂石英粉体，通入高纯石英粉体、氧气和/或其它气态共掺物，使高纯石英粉体按照一定比例沉积在掺杂芯层的表面，形成石英外包层；
S3、去除靶棒，将掺杂芯层和石英外包层形成的整体在900℃～1800℃高温下逐步熔缩，得到掺杂光纤预制棒。
在上述技术方案的基础上，所述稀土材料为镱、铥、铒、钬、镝、铽、钆、铕、钐、钷、钕、镨、铈、镧的化合物中的至少一种。
在上述技术方案的基础上，所述稀土材料为氯化镱、氯化铥、氯化铒中的至少一种。
在上述技术方案的基础上，所述功能金属材料为钴、铁、钙、钾、镁、钒、锗、铋元素的化合物中的至少一种。
在上述技术方案的基础上，所述功能金属材料为氯化钴和/或氯 化铁。
在上述技术方案的基础上，所述共掺剂为氯化铝、氯化铈、氯化铁中的至少一种。
在上述技术方案的基础上，所述高纯石英粉体的粒度小于100μm。
在上述技术方案的基础上，所述其它气态共掺物为六氟乙烷或者三氯氧磷。
在上述技术方案的基础上，步骤S1中所述溶剂为水或者乙醇。
本发明还提供一种掺杂光纤预制棒，该掺杂光纤预制棒采用上述方法制备而成。
在上述技术方案的基础上，该掺杂光纤预制棒中，掺杂芯层的折射率高于石英外包层的折射率，折射率差的百分比为0.1％～1.2％。
在上述技术方案的基础上，该掺杂光纤预制棒中，石英外包层与掺杂芯层的横截面积比为3.0～1275.5。
与现有技术相比，本发明的优点如下：
(1)在激光光纤与高衰减光纤等特种光纤的应用中，掺杂均匀性是光纤非常关键的性能。本发明采用高纯石英粉体颗粒表面包覆掺杂物的方式制备掺杂前驱体，使掺杂物与作为光纤沉积基质材料的高纯石英粉体颗粒充分接触，实现稀土离子或功能金属离子的高浓度掺杂。该方法适用于多种掺杂物共同掺杂，能够有效避免常规工艺中多种共掺剂与掺杂物微孔渗透能力的差异，以及重力因素造成浸泡过程中溶液浓度的差异，提高轴向掺杂均匀性。
(2)本发明利用高频等离子外喷沉积技术，将掺杂前驱体沉积在靶棒上，避免了复杂的多趟沉积掺杂工艺，有效减少杂质引入，从根本上提高光纤预制棒中稀土离子或功能金属离子的掺杂均匀性。该 方法属于管外沉积技术，生产工艺简单，能够突破管内沉积技术受到的掺杂纤芯尺寸限制，显著提升掺稀土光纤预制棒的生产效率，降低激光光纤研制成本，实现掺杂光纤预制棒低成本、高效率的规模化生产，符合激光光纤和特种通信器件光纤产业化需求。
综上所述，本发明采用高纯石英粉体颗粒表面包覆掺杂物的方式制备掺杂前驱体，结合高频等离子外喷沉积技术，能够实现光纤预制棒中稀土或功能金属离子的高浓度掺杂，提高轴向掺杂均匀性；该方法能够降低掺杂光纤研制成本，制备的掺杂光纤预制棒的芯径尺寸不受限制，实现激光光纤、高衰减光纤等高附加值特种光纤的高效率、低成本的规模化生产。
附图说明
图1为本发明实施例中掺杂光纤预制棒的制备流程图；
图2为本发明实施例中掺杂光纤预制棒的沉积工艺示意图；
图3为本发明实施例中沉积工艺完成后的结构示意图；
图4为本发明实施例中熔缩后的掺杂光纤预制棒的结构示意图；
图5为本发明实施例中掺杂光纤的端面结构示意图。
附图标记：1—靶棒，2—掺杂芯层，3—石英外包层。
具体实施方式
下面结合附图及具体实施例对本发明进行详细描述。
参见图1所示，本发明实施例提供一种高效制备掺杂光纤预制棒的方法，包括以下步骤：
(1)将稀土材料或功能金属材料与共掺剂按一定比例混合，搅拌均匀后，缓慢加入溶剂；共掺剂能够与溶剂反应放出大量的热，促进稀土材料或功能金属材料溶解；混合物全部溶解后放置40～80min， 待溶液冷却后用中速滤纸进行过滤，过滤完成后按照需求比例进行定容，得到掺杂溶液；
稀土材料可以为镱、铥、铒、钬、镝、铽、钆、铕、钐、钷、钕、镨、铈、镧的化合物中的至少一种，例如，可以为氯化镱、氯化铥、氯化铒中的至少一种；功能金属材料可以为钴、铁、钙、钾、镁、钒、锗、铋元素的化合物中的至少一种，例如，可以为氯化钴和/或氯化铁；共掺剂可以为氯化铝、氯化铈、氯化铁中的至少一种；溶剂可以为水或者乙醇；
(2)采用目数为150～400目的金属网筛对纯度为99％以上的高纯石英粉体进行筛选，筛下的高纯石英粉体为粒度小于100μm的超细高纯石英粉体，将超细高纯石英粉体与掺杂溶液按照0.2～7.0的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；
(3)将掺杂前驱体经100℃～150℃高温烘干12～48小时后，对其进行机械粉粹与研磨，并用目数为150～400目的金属网筛进行筛选，得到掺杂石英粉体；
(4)参见图2所示，将靶棒1安装在等离子体外喷沉积设备中，将掺杂石英粉体、氧气和/或其它气态共掺物一同通入等离子体加热区，使掺杂石英粉体按照一定比例沉积在靶棒1的表面，形成掺杂芯层2；其它气态共掺物可以为六氟乙烷或者三氯氧磷；
参见图3所示，在靶棒1上完成沉积得到掺杂芯层2后，停止通入掺杂石英粉体，仅选择性通入高纯石英粉体、氧气和/或其它气态共掺物，使高纯石英粉体按照一定比例沉积在掺杂芯层2的表面，形成石英外包层3；
(5)沉积工艺完成后，采用钻孔工艺去除靶棒1，得到掺杂芯层2和石英外包层3形成的整体，清洗其内壁，再进行火焰抛光，将 掺杂芯层2和石英外包层3形成的整体在900℃～1800℃高温以及控压调节下，逐步熔缩，形成如图4所示的掺杂光纤预制棒。
本发明实施例提供一种掺杂光纤预制棒，采用上述方法制备而成。该掺杂光纤预制棒中，掺杂芯层2的折射率高于石英外包层3的折射率，折射率差的百分比为0.1％～1.2％，石英外包层3与掺杂芯层2的横截面积比为3.0～1275.5。
将上述掺杂光纤预制棒拉制成掺杂光纤后进行测试，具体过程如下：
将该掺杂光纤预制棒加工成需求外形，在1800℃～2200℃的拉丝塔高温炉中熔融，以1.5m/min～2200m/min的拉丝速度，25g～200g的拉丝张力，拉制成需求型号的掺杂光纤。参见图5所示，掺杂光纤包括由内至外依次排列的纤芯(参见图5中的黑色圆形区域)、光纤包层、内涂层、外涂层。
下面通过41个具体实施例来对本发明进行进一步阐述。
实施例1
本实施例提供一种高效制备掺杂光纤预制棒的方法，包括如下步骤：
将737.28g的氯化镱水合物晶体粉末、510.72g的无水氯化铝晶体粉末、71.42g的氯化铈水合物晶体粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置60min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为200目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照1：5的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经150℃高温烘干12小时后，对其进行 机械粉粹与研磨，并用目数为200目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为8000ml/min的氧气、流量为500ml/min的三氯氧磷一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为314.16mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125349.50mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1700℃高温在控压调节下，逐步熔缩形成掺镱光纤预制棒。
将上述掺镱光纤预制棒拉制成光纤后进行测试，具体过程如下：
将该掺镱光纤预制棒加工成正八边形结构，在拉丝塔高温炉中以1950℃熔融，以25m/min的拉丝速度，150g的拉丝张力，拉制成包层直径为402μm，涂层直径为564μm的掺镱光纤(20/400型掺镱光纤)，该光纤测试的主要指标参见表1所示。
表1、20/400型掺镱光纤测试结果
Figure PCTCN2016102796-appb-000001
Figure PCTCN2016102796-appb-000002
实施例2
本实施例提供一种高效制备掺杂光纤预制棒的方法，包括如下步骤：
将481.32g的氯化铥水合物晶体粉末、574.56g的无水氯化铝晶体粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置40min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为200目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照6：1的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经150℃高温烘干48小时后，对其进行机械粉粹与研磨，并用目数为150目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为9500ml/min的氧气、流量为70ml/min的六氟乙烷一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为490.87mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125172.80mm2。沉积工艺完成后，通过钻 孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1750℃高温在控压调节下，逐步熔缩形成掺铥光纤预制棒。
将上述掺铥光纤预制棒拉制成光纤后进行测试，具体过程如下：
将该掺铥光纤预制棒加工成正八边形结构，在拉丝塔高温炉中以2100℃熔融，以12m/min的拉丝速度，80g的拉丝张力，拉制成包层直径为401μm，涂层直径为568μm的掺铥光纤(25/400型掺铥光纤)，该光纤测试的主要指标参见表2所示。
表2、25/400型掺铥光纤测试结果
Figure PCTCN2016102796-appb-000003
实施例3
本实施例提供一种高效制备掺杂光纤预制棒的方法，包括如下步骤：
将212.94g的氯化钴水合物晶体粉末、438.90g的无水氯化铝晶体粉末、167.10g的光谱纯氯化铁粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置80min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为200目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照7：1的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经100℃高温烘干48小时后，对其进行机械粉粹与研磨，并用目数为300目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为8200ml/min的氧气一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为63.62mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为12208.23mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1500℃高温在控压调节下，逐步熔缩形成高衰减光纤预制棒。
将上述高衰减光纤预制棒拉制成光纤后进行测试，具体过程如下：
将该高衰减光纤预制棒加工成正八边形结构，在拉丝塔高温炉中以2200℃熔融，以1700m/min的拉丝速度，180g的拉丝张力，拉制 成作为衰减器关键元器件的包层直径为125.2μm，涂层直径为246μm的高衰减光纤，该光纤测试的主要指标参见表3所示。
表3、高衰减光纤测试结果
Figure PCTCN2016102796-appb-000004
实施例4
本实施例提供一种高效制备掺杂光纤预制棒的方法，包括如下步骤：
将737.28g的氯化镱水合物晶体粉末、766.08g的无水氯化铝晶体粉末、458.40g的氯化铒水合物晶体粉末进行混合，搅拌均匀后，缓慢向混合物中加入乙醇，待混合物全部溶解后放置80min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为200目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照1：1的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经120℃高温烘干24小时后，对其进行机械粉粹与研磨，并用目数为200目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐 步下料，同时以9500ml/min氧气流量，一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为314.16mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125349.50mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1700℃高温在控压调节下，逐步熔缩形成铒镱共掺光纤预制棒，在此基础上进行套棒加工，实现光纤预制棒横截面纤芯直径与包层直径比例为1：43.72。
将上述铒镱共掺光纤预制棒拉制成光纤后进行测试，具体过程如下：
将该铒镱共掺光纤预制棒，在拉丝塔高温炉中以1950℃熔融，以70m/min的拉丝速度，120g的拉丝张力，拉制成包层直径为125μm，涂层直径为245μm的掺镱光纤(铒镱共掺光纤)，该光纤测试的主要指标参见表4所示。
表4、铒镱共掺光纤测试结果
Figure PCTCN2016102796-appb-000005
Figure PCTCN2016102796-appb-000006
实施例5
将737.28g的氯化钬水合物晶体粉末、71.42g的氯化铈水合物晶体粉末、167.10g的光谱纯氯化铁粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置60min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为150目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照1：5的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经150℃高温烘干12小时后，对其进行机械粉粹与研磨，并用目数为150目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为8000ml/min的氧气、流量为500ml/min的三氯氧磷一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为314.16mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125349.50mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用900℃高温在控压调节下，逐步熔缩形成掺镱光纤预制棒。
实施例6
将737.28g的氯化镝水合物晶体粉末、71.42g的氯化铈水合物晶 体粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置60min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为400目的金属筛筛下的超细高纯石英粉体与掺杂溶液按照1：5的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经150℃高温烘干12小时后，对其进行机械粉粹与研磨，并用目数为400目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为8000ml/min的氧气、流量为500ml/min的三氯氧磷一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为314.16mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125349.50mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1000℃高温在控压调节下，逐步熔缩形成掺镱光纤预制棒。
实施例7
将737.28g的氯化铽水合物晶体粉末、167.10g的光谱纯氯化铁粉末进行混合，搅拌均匀后，缓慢向混合物中加入去离子水，待混合物全部溶解后放置60min，待溶液冷却后用中速滤纸进行过滤，过滤完成后按6000ml定容，得到掺杂溶液。
将经过目数为400目的金属筛筛下的超细高纯石英粉体与掺杂 溶液按照1：5的体积比均匀混合，并采用机械设备快速搅拌，形成掺杂前驱体；将掺杂前驱体经150℃高温烘干12小时后，对其进行机械粉粹与研磨，并用目数为400目的金属网筛进行筛选，取筛下的掺杂石英粉体作为沉积原料之一。
通过等离子体外喷沉积设备，将上述工艺制备的掺杂石英粉体逐步下料，同时将流量为8000ml/min的氧气、流量为500ml/min的三氯氧磷一同通入等离子体加热区，使掺杂石英粉体按照设定比例沉积在靶棒1上，形成掺杂芯层2，沉积面积为314.16mm2；掺杂芯层2沉积完成后，切断掺杂石英粉体通入，仅通入高纯石英粉体、流量为12000ml/min的氧气，使高纯石英粉体沉积在掺杂芯层2外侧，形成石英外包层3，沉积面积为125349.50mm2。沉积工艺完成后，通过钻孔工艺将靶棒1去除，得到掺杂芯层2和石英外包层3形成的整体，掺杂芯层2和石英外包层3形成的整体为中空的圆柱形材料，清洗圆柱形材料内壁，然后进行火焰抛光，再利用1200℃高温在控压调节下，逐步熔缩形成掺镱光纤预制棒。
实施例8
本实施例中除稀土材料及其质量为737.28g的氯化钆水合物晶体粉末外，其余的均与实施例2相同。
实施例9
本实施例中除稀土材料及其质量为737.28g的氯化铕水合物晶体粉末外，其余的均与实施例2相同。
实施例10
本实施例中除稀土材料及其质量为737.28g的氯化钐水合物晶体粉末外，其余的均与实施例2相同。
实施例11
本实施例中除稀土材料及其质量为737.28g的氯化钷水合物晶体粉末外，其余的均与实施例2相同。
实施例12
本实施例中除稀土材料及其质量为737.28g的氯化钕水合物晶体粉末外，其余的均与实施例2相同。
实施例13
本实施例中除稀土材料及其质量为737.28g的氯化镨水合物晶体粉末外，其余的均与实施例2相同。
实施例14
本实施例中除稀土材料及其质量为737.28g的硝酸铈水合物晶体粉末外，其余的均与实施例2相同。
实施例15
本实施例中除稀土材料及其质量为737.28g的硝酸镧水合物晶体粉末外，其余的均与实施例2相同。
实施例16
本实施例中除稀土材料及其质量为737.28g的氯化镱水合物晶体粉末、458.40g的氯化铥水合物晶体粉末外，其余部分均与实施例4相同。
实施例17
本实施例中除稀土材料及其质量为737.28g的氯化钬水合物晶体粉末、458.40g的氯化镝水合物晶体粉末外，其余部分均与实施例4相同。
实施例18
本实施例中除稀土材料及其质量为737.28g的氯化钆水合物晶体粉末、458.40g的氯化钕水合物晶体粉末外，其余部分均与实施例4 相同。
实施例19
本实施例中除稀土材料及其质量为737.28g的氯化镨水合物晶体粉末、458.40g的氯化镧水合物晶体粉末外，其余部分均与实施例4相同。
实施例20
本实施例中除稀土材料及其质量为737.28g的氯化铽水合物晶体粉末、458.40g的氯化钷水合物晶体粉末外，其余部分均与实施例4相同。
实施例21
本实施例中除稀土材料及其质量为737.28g的氯化铕水合物晶体粉末、458.40g的氯化镧水合物晶体粉末、458.40g的氯化铥水合物晶体粉末外，其余部分均与实施例4相同。
实施例22
本实施例中除稀土材料及其质量为737.28g的氯化镱水合物晶体粉末、458.40g的氯化钬水合物晶体粉末、458.40g的氯化铥水合物晶体粉末外，其余部分均与实施例4相同。
实施例23
本实施例中除稀土材料及其质量为737.28g的氯化镝水合物晶体粉末、458.40g的氯化铕水合物晶体粉末、458.40g的氯化钕水合物晶体粉末外，其余部分均与实施例4相同。
实施例24
本实施例中除稀土材料及其质量为737.28g的氯化镝水合物晶体粉末、458.40g的氯化铕水合物晶体粉末、458.40g的氯化钕水合物晶体粉末、458.40g的氯化镧水合物晶体粉末外，其余部分均与实施例 4相同。
实施例25
本实施例中除稀土材料及其质量为737.28g的氯化镱水合物晶体粉末、458.40g的氯化铒水合物晶体粉末、458.40g的氯化钕水合物晶体粉末、458.40g的氯化铈水合物晶体粉末外，其余部分均与实施例4相同。
实施例26
本实施例中除功能金属材料及其质量为212.94g的氯化铁水合物晶体粉末外，其余部分均与实施例3相同。
实施例27
本实施例中除功能金属材料及其质量为212.94g的氯化钙水合物晶体粉末外，其余部分均与实施例3相同。
实施例28
本实施例中除功能金属材料及其质量为212.94g的氯化钾水合物晶体粉末外，其余部分均与实施例3相同。
实施例29
本实施例中除功能金属材料及其质量为212.94g的氯化镁水合物晶体粉末外，其余部分均与实施例3相同。
实施例30
本实施例中除功能金属材料及其质量为212.94g的氯化钒水合物晶体粉末外，其余部分均与实施例3相同。
实施例31
本实施例中除功能金属材料及其质量为212.94g的氯化锗水合物晶体粉末外，其余部分均与实施例3相同。
实施例32
本实施例中除功能金属材料及其质量为212.94g的氯化铋水合物晶体粉末外，其余部分均与实施例3相同。
实施例33
本实施例中除功能金属材料及其质量为212.94g的氯化钴水合物晶体粉末、212.94g的氯化铁水合物晶体粉末外，其余部分均与实施例3相同。
实施例34
本实施例中除功能金属材料及其质量为212.94g的氯化钾水合物晶体粉末、212.94g的氯化镁水合物晶体粉末外，其余部分均与实施例3相同。
实施例35
本实施例中除功能金属材料及其质量为212.94g的氯化钒水合物晶体粉末、212.94g的氯化锗水合物晶体粉末外，其余部分均与实施例3相同。
实施例36
本实施例中除功能金属材料及其质量为212.94g的氯化钒水合物晶体粉末、212.94g的氯化铋水合物晶体粉末外，其余部分均与实施例3相同。
实施例37
本实施例中除功能金属材料及其质量为212.94g的氯化钴水合物晶体粉末、212.94g的氯化钒水合物晶体粉末外，其余部分均与实施例3相同。
实施例38
本实施例中除功能金属材料及其质量为212.94g的氯化钙水合物晶体粉末、212.94g的氯化锗水合物晶体粉末外，其余部分均与实施 例3相同。
实施例39
本实施例中除功能金属材料及其质量为212.94g的氯化钙水合物晶体粉末、212.94g的氯化锗水合物晶体粉末、212.94g的氯化钒水合物晶体粉末外，其余部分均与实施例3相同。
实施例40
本实施例中除功能金属材料及其质量为212.94g的氯化钙水合物晶体粉末、212.94g的氯化钴水合物晶体粉末、212.94g的氯化铁水合物晶体粉末外，其余部分均与实施例3相同。
实施例41
本实施例中除功能金属材料及其质量为212.94g的氯化钙水合物晶体粉末、212.94g的氯化镁水合物晶体粉末、212.94g的氯化锗水合物晶体粉末、212.94g的氯化铋水合物晶体粉末外，其余部分均与实施例3相同。
本领域的技术人员可以对本发明实施例进行各种修改和变型，倘若这些修改和变型在本发明权利要求及其等同技术的范围之内，则这些修改和变型也在本发明的保护范围之内。
说明书中未详细描述的内容为本领域技术人员公知的现有技术。

Claims (12)

  1. 一种高效制备掺杂光纤预制棒的方法，其特征在于，包括以下步骤：
    S1、将稀土材料或功能金属材料与共掺剂按照一定比例混合，加入溶剂，配制成掺杂溶液；将纯度为99％以上的高纯石英粉体与掺杂溶液混合，搅拌均匀，得到掺杂前驱体；将掺杂前驱体在100℃～150℃温度下烘干12～48小时，粉碎，用目数大于150目的网筛进行筛选，得到掺杂石英粉体；
    S2、将靶棒(1)安装在等离子体外喷沉积设备中，将掺杂石英粉体、氧气和/或其它气态共掺物一同通入等离子体外喷沉积设备中的等离子体加热区，使掺杂石英粉体按照一定比例沉积在靶棒(1)的表面，形成掺杂芯层(2)；停止通入掺杂石英粉体，通入高纯石英粉体、氧气和/或其它气态共掺物，使高纯石英粉体按照一定比例沉积在掺杂芯层(2)的表面，形成石英外包层(3)；
    S3、去除靶棒(1)，将掺杂芯层(2)和石英外包层(3)形成的整体在900℃～1800℃高温下逐步熔缩，得到掺杂光纤预制棒。
  2. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述稀土材料为镱、铥、铒、钬、镝、铽、钆、铕、钐、钷、钕、镨、铈、镧的化合物中的至少一种。
  3. 如权利要求2所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述稀土材料为氯化镱、氯化铥、氯化铒中的至少一种。
  4. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述功能金属材料为钴、铁、钙、钾、镁、钒、锗、铋元素的化合物中的至少一种。
  5. 如权利要求4所述的高效制备掺杂光纤预制棒的方法，其特 征在于：所述功能金属材料为氯化钴和/或氯化铁。
  6. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述共掺剂为氯化铝、氯化铈、氯化铁中的至少一种。
  7. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述高纯石英粉体的粒度小于100μm。
  8. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：所述其它气态共掺物为六氟乙烷或者三氯氧磷。
  9. 如权利要求1所述的高效制备掺杂光纤预制棒的方法，其特征在于：步骤S1中所述溶剂为水或者乙醇。
  10. 一种掺杂光纤预制棒，其特征在于：该掺杂光纤预制棒采用权利要求1至9中任一项所述的方法制备而成。
  11. 如权利要求10所述的掺杂光纤预制棒，其特征在于：该掺杂光纤预制棒中，掺杂芯层(2)的折射率高于石英外包层(3)的折射率，折射率差的百分比为0.1％～1.2％。
  12. 如权利要求10所述的掺杂光纤预制棒，其特征在于：该掺杂光纤预制棒中，石英外包层(3)与掺杂芯层(2)的横截面积比为3.0～1275.5。
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