WO2017181620A1 - Oled及其制备方法、以及oled显示装置 - Google Patents

Oled及其制备方法、以及oled显示装置 Download PDF

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WO2017181620A1
WO2017181620A1 PCT/CN2016/101747 CN2016101747W WO2017181620A1 WO 2017181620 A1 WO2017181620 A1 WO 2017181620A1 CN 2016101747 W CN2016101747 W CN 2016101747W WO 2017181620 A1 WO2017181620 A1 WO 2017181620A1
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organic material
material layer
layer
oled
patterned
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PCT/CN2016/101747
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English (en)
French (fr)
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张粲
高雪
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京东方科技集团股份有限公司
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Priority to EP16869394.3A priority Critical patent/EP3447815B1/en
Priority to US15/534,523 priority patent/US10103348B2/en
Publication of WO2017181620A1 publication Critical patent/WO2017181620A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • Embodiments of the present disclosure relate to an OLED, a method of fabricating the same, and an OLED display device.
  • OLED devices are typically controlled by thin film transistors (TFTs). Therefore, if the OLED device of the bottom emission structure emits light in the form of a bottom emission, the light emitted from the bottom is blocked by the TFT and the metal line circuit formed on the substrate when passing through the substrate, so the area of the actual light emission is limited, and the reduction can be reduced.
  • the ratio of the area of the light which is the so-called aperture ratio.
  • many of the OLEDs currently under study employ a circuit-compensated pixel structure in which, for example, a pixel circuit of 2T1C or more is used. In this case, the aperture ratio of the OLED device of the bottom emission structure is further reduced.
  • Top-emitting OLED devices have a great advantage over bottom-emitting OLED devices, which can increase the aperture ratio and thus extend the life of the device. For large size top-emitting OLED devices, the cathode structure is critical.
  • the cathode of an OLED device is typically prepared in two ways.
  • a metal such as a magnesium-silver alloy is generally used as the cathode.
  • the metal needs to be evaporated to a very thin thickness, which causes a large electrical resistance and a severe IR drop, resulting in poor uniformity of the OLED panel, which in turn affects the process.
  • Application in size a transparent metal oxide such as indium zinc oxide (IZO) is used as a cathode. Since the transparent metal oxide film material has a high transmittance, its resistance can satisfy the performance requirements of the device even when the thickness is large.
  • IZO indium zinc oxide
  • the material needs to be prepared by a process such as sputtering, and the energy during sputtering is large, which is easy to damage the OLED device, thereby affecting the injection efficiency and lifetime of the OLED device.
  • Embodiments of the present disclosure provide a new OLED, a method of fabricating the same, and an OLED display device capable of effectively reducing a resistance voltage drop and improving uniformity of an OLED panel.
  • the embodiments of the present disclosure are particularly applicable to a large-sized top emission type OLED and a method of fabricating the same.
  • a method of fabricating an OLED including:
  • a patterned second organic material layer on the first organic material layer, wherein a material of the second organic material layer is different from a material of the first organic material layer, and the first organic material layer is a projection in a direction perpendicular to a main plane of the OLED overlaps with a projection of the second organic material layer in the direction;
  • auxiliary electrode on the cathode layer on which the patterned first organic material layer and the patterned second organic material layer are formed, wherein the auxiliary electrode is perpendicular to a main plane of the OLED
  • the projection in the direction does not overlap with the projection of the first organic material layer and the second organic material layer in the direction.
  • an anode, a cathode layer, and an intermediate layer between the anode and cathode layers are formed in the pixel confinement layer, and patterned first and second organic material layers are formed on the cathode layer, the first and second organic a material layer is located in a pixel light emitting region of the OLED, a projection of the first organic material layer in a direction perpendicular to a main plane of the OLED overlaps with a projection of the second organic material layer in the direction, and the Forming an auxiliary electrode on the cathode layer of the first and second organic material layers, wherein the projection of the auxiliary electrode in a direction perpendicular to a main plane of the OLED and the first organic material layer and the second organic material The projection of the layer in this direction does not overlap, so that the material of the auxiliary electrode is attached to the cathode layer outside the pixel light-emitting region.
  • auxiliary power The electrode layer can be overlapped with the cathode layer without affecting
  • the forming the patterned first organic material layer on the cathode layer of the OLED includes: vaporizing the cathode layer on the cathode layer of the OLED with a fine metal mask (FMM) The first layer of organic material.
  • FMM fine metal mask
  • the fineness and positioning accuracy of the pattern of the first organic material layer can be improved, and the first organic material layer can be effectively formed in the pixel light-emitting region of the OLED. , thereby improving the brightness and uniformity of the OLED panel.
  • the forming the patterned second organic material layer on the first organic material layer includes: using a fine metal mask or an open mask on the first organic material layer
  • the patterned second organic material layer is evaporated.
  • the fineness and positioning accuracy of the pattern of the second organic material layer can be improved, and the second organic material layer is effectively formed in the pixel light-emitting region of the OLED, thereby improving the OLED. Brightness and uniformity of the panel.
  • a second organic material layer may be used: the material of the second organic material layer cannot adhere to the material of the cathode layer, and therefore, the second organic material layer and the first organic material layer are perpendicular to the main surface of the OLED The self-alignment in the direction allows evaporation of the second organic material layer using an open mask, which is simple in manufacturing process and low in manufacturing cost.
  • forming the auxiliary electrode on the cathode layer on which the patterned first organic material layer and the patterned second organic material layer are formed includes: utilizing an open The mask is formed with a material on which the auxiliary electrode of the patterned first organic material layer and the patterned second organic material layer are vapor-deposited on the cathode layer.
  • the fine metal mask can form a fine auxiliary electrode pattern, a material such as a metal or an alloy thereof as an auxiliary electrode easily adheres the fine metal mask without mass productivity.
  • the first organic material layer which does not cause FMM adhesion is deposited by FMM evaporation, and the auxiliary electrode material is vapor-deposited using an open mask, which enables the manufacturing process while ensuring the accurate vapor deposition position of the auxiliary electrode. Simple and low manufacturing costs can also increase mass production.
  • the material of the first organic material layer is an organic small molecule material having a refractive index of 1.8 or more.
  • the first organic material layer may In order to use as a light extraction layer, a small organic refractive index material having a higher refractive index of 1.8 or more facilitates vapor deposition on the one hand and facilitates light extraction on the other hand.
  • the material of the second organic material layer is a silicone small molecule material.
  • the use of the silicone small molecule material can improve the non-adhesion between the second organic material and the auxiliary electrode material, thereby improving the positioning accuracy of the auxiliary electrode.
  • the material of the auxiliary electrode is Ag, Al, or an alloy containing at least one of Ag and Al. Since Ag and Al and an alloy containing at least one of Ag and Al have a low vapor deposition temperature and are easy to implement in a manufacturing process, use of Ag, Al or an alloy thereof as an auxiliary electrode material can reduce manufacturing process difficulty and process cost. .
  • an OLED including:
  • a patterned first organic material layer on the cathode layer the first organic material layer being located in a pixel light emitting region of the OLED;
  • a patterned second organic material layer on the first organic material layer wherein a material of the second organic material layer is different from a material of the first organic material layer, and the first organic material layer is a projection in a direction perpendicular to a main plane of the OLED overlaps with a projection of the second organic material layer in the direction;
  • the projection in the direction does not overlap with the projection of the first organic material layer and the second organic material layer in the direction.
  • the first and second organic materials located in the pixel light emitting region and the auxiliary electrode located outside the pixel light emitting region are provided on the cathode layer of the OLED.
  • the auxiliary electrode can overlap with the cathode layer without affecting the light exiting from the pixel light emitting region, effectively reducing the resistance drop of the OLED, and improving the uniformity of the OLED panel.
  • an OLED display device comprising a plurality of OLEDs manufactured according to the method of the first aspect or an OLED according to the second aspect.
  • the embodiment of the present disclosure can utilize the materials of the auxiliary electrode by forming the first and second organic materials located on the pixel light emitting region on the cathode layer of the OLED and forming the auxiliary electrode over the structure thus obtained.
  • the non-adhesive property of the two organic materials causes the projection of the auxiliary electrode in a direction perpendicular to the main plane of the OLED to be non-overlapping with the projection of the first organic material layer and the second organic material layer in the direction, thereby facilitating the auxiliary
  • the electrodes are located outside the pixel illumination area. In this way, the auxiliary electrode can overlap with the cathode layer without affecting the light exiting from the pixel light emitting region, effectively reducing the resistance drop of the OLED, and improving the uniformity of the OLED panel.
  • FIG. 1 is a flow chart of preparing an OLED according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of forming an anode, a cathode layer, and an intermediate layer of an OLED according to an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of forming a first organic material layer on a cathode layer of an OLED according to an embodiment of the present disclosure
  • FIG. 4 is a schematic cross-sectional view of forming a second organic material layer on a first organic material layer in accordance with an embodiment of the present disclosure
  • FIG. 5 is a schematic cross-sectional view of forming an auxiliary electrode on a cathode layer on which first and second organic material layers are formed, according to an embodiment of the present disclosure.
  • an OLED According to an exemplary embodiment of the present disclosure, an OLED, a method of fabricating the same, and an OLED display device are provided.
  • FIG. 1 is a flow chart of preparing an OLED in accordance with an embodiment of the present disclosure. As shown in FIG. 1, the method for preparing the OLED includes:
  • Step S102 forming an anode, a cathode layer, and an intermediate layer between the anode and cathode layers in the pixel confinement layer;
  • Step S104 forming a patterned first organic material layer on a cathode layer of the OLED, the first organic material layer being located in a pixel light emitting region of the OLED;
  • Step S106 forming a patterned second organic material layer on the first organic material layer, wherein the material of the second organic material layer is different from the material of the first organic material layer, and the first organic material layer is in a main plane with the OLED The projection in the vertical direction overlaps with the projection of the second organic material layer in the direction;
  • Step S108 forming an auxiliary electrode on the cathode layer on which the patterned first organic material layer and the patterned second organic material layer are formed, wherein the auxiliary electrode is projected in a direction perpendicular to the main plane of the OLED The projection of an organic material layer and the second organic material layer in this direction does not overlap.
  • an anode 12, a cathode layer 16, and an intermediate layer 14 between the anode 12 and the cathode layer 16 are formed in the pixel confinement layer 10.
  • the intermediate layer 14 may include an organic layer such as a hole transport layer, an organic light emitting layer, and an electron transport layer.
  • a patterned first organic material layer 18 is formed on the cathode layer 16 of the OLED, the first organic material layer 18 being located in the pixel light emitting region of the OLED, and the first organic material is absent in other regions.
  • the resulting structure is shown in Figure 3.
  • the first organic material layer 18 may be evaporated using a mask.
  • the first organic material layer 18 may be evaporated on the cathode layer 16 using a fine metal mask (FMM) to improve the fineness and positioning accuracy of the pattern of the first organic material layer 18, and efficiently
  • FMM fine metal mask
  • the first organic material layer 18 can function as a light extraction layer.
  • the light extraction layer is also referred to as a cathode coating layer having a thickness of ⁇ /4n, where ⁇ is the luminescence peak wavelength and n is the refractive index of the light extraction layer.
  • ⁇ is the luminescence peak wavelength
  • n is the refractive index of the light extraction layer.
  • the higher the refractive index of the light extraction layer the greater the transmittance of the layer.
  • the larger the transmittance the weaker the microcavity effect. Therefore, one of the requirements for the light extraction layer is index matching, which compromises between transmittance and microcavity effects, such a light extraction layer can improve device efficiency.
  • the material of the light extraction layer may be an organic small molecule material having a higher refractive index (for example, a refractive index of 1.8 or more), for example, octahydroxyquinoline aluminum (Alq3).
  • a patterned second organic material layer 20 is formed on the first organic material layer 18, wherein the material of the second organic material layer 20 is different from the material of the first organic material layer 18, and
  • the projection of an organic material layer 18 in a direction perpendicular to the main plane of the OLED overlaps with the projection of the second organic material layer 20 in that direction.
  • such an organic material may be employed as the material of the second organic material layer 20: the organic material may adhere to the material of the first organic material layer 18, but may not adhere to the material of the cathode layer 16. .
  • the second organic material layer 20 and the first organic material layer 18 are self-aligned in a direction perpendicular to the main surface of the OLED.
  • a certain material mentioned herein “can be attached to” another material means that the two materials have a bonding property.
  • a material referred to herein that "cannot be attached to” another material means that the two materials do not have cohesiveness or that there is no adhesion between the two materials.
  • the second organic material layer 20 is self-aligned with the first organic material layer 18, the second organic material layer 20 is also formed in the pixel light-emitting region of the OLED.
  • the patterned second organic material layer 20 may be formed on the first organic material layer 18 by using a fine metal mask to improve the fineness and positioning accuracy of the pattern of the second organic material layer 20.
  • the second organic material layer 20 is efficiently formed in the pixel light-emitting region of the OLED.
  • the second organic material layer 20, that is, the second organic material may be attached to the material of the cathode layer 16 because its material can adhere to the material of the first organic material layer 18.
  • the layer 20 and the first organic material layer 18 can be self-aligned, and therefore, the second organic material layer 20 can also be evaporated using an open mask.
  • the manufacturing process is relatively simple and the manufacturing cost is low. low.
  • the material of the second organic material layer 20 may be a silicone small molecule material, for example, an isocyanatosilane, an alkoxysilane polyurethane, or the like.
  • the silicone small molecule material has a good non-adhesion property with the material of the auxiliary electrode to be formed next on the cathode layer 16, so that the positioning accuracy of the auxiliary electrode can be improved.
  • an auxiliary electrode 22 is formed on the cathode layer 16 on which the patterned first organic material layer 18 and the patterned second organic material layer 20 are formed, wherein the auxiliary electrode 22 is in contact with the OLED
  • the projection in the direction perpendicular to the main plane does not overlap with the projection of the first organic material layer 18 and the second organic material layer 20 in this direction.
  • such a material may be employed as the material of the auxiliary electrode 22: the material cannot adhere to the material of the second organic material layer 20 and can adhere to the material of the cathode layer 16, such that the auxiliary electrode 22 is located On the cathode layer 16 outside the pixel light-emitting region.
  • the material of the auxiliary electrode may be evaporated on the cathode layer 16 on which the first organic material layer 18 and the second organic material layer 20 are formed using an open mask. Since the material of the auxiliary electrode 22 can adhere to the material of the cathode layer 16 and cannot adhere to the material of the second organic material layer 20, an open mask can be simply utilized, and the first organic material of the cathode layer 16 is located. On the outer side of the layer 18 and the second organic material layer 20, that is, at the cathode The auxiliary electrode 22 is formed on a region of the layer 16 outside the pixel light-emitting region.
  • any material that can be used as an electrode can be used.
  • Ag and Al and an alloy containing at least one of Ag and Al have a low vapor deposition temperature, they are easily implemented in a manufacturing process, and therefore, Ag, Al or an alloy thereof may be used as an auxiliary electrode material to lower the manufacturing process. Difficulty and cost.
  • an OLED display device including a plurality of the above OLEDs is also contemplated.
  • the exemplary embodiments of the present disclosure have been described above.
  • the second organic material can adhere well to the first organic material due to the particularity of the second organic material, and the metal material does not adhere to On such materials. Therefore, the fine auxiliary electrode can be located outside the pixel light emitting region, so that the auxiliary electrode overlaps with the cathode layer without affecting the light exiting from the pixel light emitting region, which effectively reduces the resistance drop of the OLED, and improves the OLED panel. Uniformity.

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Abstract

提供了一种OLED及其制备方法、以及OLED显示装置。该OLED的制备方法包括：在像素限制层中形成阳极、阴极层以及位于阳极与阴极层之间的中间层；在阴极层上形成图案化的第一有机材料层，第一有机材料层位于OLED的像素发光区域；在第一有机材料层上形成图案化的第二有机材料层，其中第二有机材料层的材料不同于第一有机材料层的材料，并且第一有机材料层在与OLED的主平面垂直的方向上的投影与第二有机材料层在该方向上的投影重叠；以及在其上形成有图案化的第一有机材料层和图案化的第二有机材料层的阴极层上形成辅助电极，其中辅助电极在与OLED的主平面垂直的方向上的投影与第一有机材料层和第二有机材料层在该方向上的投影无重叠。

Description

OLED及其制备方法、以及OLED显示装置
相关申请的交叉引用
本申请要求于2016年4月22日递交的中国专利申请第201610255474.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及OLED及其制备方法、以及OLED显示装置。
背景技术
当前的主动式有机发光二极管(OLED)器件一般由薄膜晶体管(TFT)控制。因此，如果底发射结构的OLED器件以底部出射的形式发光，则从底部出射的光经过基板时会被形成在基板上的TFT和金属线电路所遮挡，所以实际发光的面积受到限制，缩减可发光面积所占的比率，也就是所谓的开口率。此外，为了改善像素之间的亮度差异，目前的很多正在研究的OLED采用电路补偿的像素结构，在这些像素结构中，使用例如2T1C以上的像素电路。在这种情况下，底发射结构的OLED器件的开口率进一步减小。顶发射OLED器件相对于底发射OLED器件优势很大，可以增大开口率，进而延长器件的寿命。对于大尺寸的顶发射OLED器件，阴极结构至关重要。
通常采用两种方法制备OLED器件的阴极。在第一种工艺较为简单的方法中，一般采用例如镁银合金等金属作为阴极。但是由于透明的需要，金属需要被蒸镀得很薄，这会造成电阻较大，电阻压降(IR drop)严重，从而导致OLED面板的均匀性较差，进而影响了这种工艺方法在大尺寸中的应用。在第二种方法中，采用诸如氧化铟锌(IZO)的透明金属氧化物作为阴极。由于透明金属氧化物的薄膜材料透过率较高，因此即使在厚度较大时，其电阻也能满足器件的性能需要。然而，由于透明金属氧化物材 料需要采用诸如溅射的工艺进行制备，溅射时能量较大，容易对OLED器件造成损伤，进而影响OLED器件的注入效率、寿命等性能。
发明内容
本公开的实施例提供一种新的OLED及其制备方法、以及OLED显示装置，能够有效地降低电阻压降，且提高OLED面板的均匀性。本公开实施例特别适用于大尺寸的顶发射型OLED及其制备方法。
根据本公开实施例的第一方面，提供一种OLED的制备方法，其包括：
在像素限制层中形成阳极、阴极层以及位于所述阳极与所述阴极层之间的中间层；
在所述阴极层上形成图案化的第一有机材料层，所述第一有机材料层位于所述OLED的像素发光区域；
在所述第一有机材料层上形成图案化的第二有机材料层，其中所述第二有机材料层的材料不同于所述第一有机材料层的材料，并且所述第一有机材料层在与所述OLED的主平面垂直的方向上的投影与所述第二有机材料层在该方向上的投影重叠；以及
在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上形成辅助电极，其中所述辅助电极在与所述OLED的主平面垂直的方向上的投影与所述第一有机材料层和所述第二有机材料层在该方向上的投影无重叠。
根据该方面，在像素限制层中形成阳极、阴极层以及位于阳极与阴极层之间的中间层，在阴极层上形成图案化的第一和第二有机材料层，该第一和第二有机材料层位于OLED的像素发光区域，第一有机材料层在与所述OLED的主平面垂直的方向上的投影与第二有机材料层在该方向上的投影重叠，并且在其上形成有所述第一和第二有机材料层的阴极层上形成辅助电极，其中所述辅助电极在与所述OLED的主平面垂直的方向上的投影与所述第一有机材料层和所述第二有机材料层在该方向上的投影无重叠，从而辅助电极的材料附着于像素发光区域外侧的阴极层上。这样，辅助电 极可以与阴极层搭接且不会影响光从像素发光区域的出射，有效地降低了OLED的电阻压降，提高OLED面板的均匀性。
根据本公开的示例性实施例，所述在OLED的阴极层上形成图案化的第一有机材料层包括：利用精细金属掩模板(FMM)在所述OLED的所述阴极层上蒸镀所述第一有机材料层。根据该实施例，通过使用精细金属掩模板蒸镀第一有机材料层，可以提高第一有机材料层的图案的精细度和定位精度，有效地将第一有机材料层形成在OLED的像素发光区域，进而提高OLED面板的亮度和均匀性。
根据本公开的示例性实施例，所述在所述第一有机材料层上形成图案化的第二有机材料层包括：利用精细金属掩模板或开放式掩模板在所述第一有机材料层上蒸镀所述图案化的第二有机材料层。当使用精细金属掩模版蒸镀第二有机材料层时，可以提高第二有机材料层的图案的精细度和定位精度，有效地将第二有机材料层形成在OLED的像素发光区域，进而提高OLED面板的亮度和均匀性。另一方面，可以使用这样的第二有机材料层：该第二有机材料层的材料不能附着到阴极层的材料上，因此，第二有机材料层与第一有机材料层在垂直于OLED主表面的方向上自对准，从而允许使用开放式掩模板蒸镀第二有机材料层，制造工艺简单且制造成本低。
根据本公开的示例性实施例，所述在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上形成辅助电极包括：利用开放式掩模板在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上蒸镀辅助电极的材料。精细金属掩模板虽然可以形成精细的辅助电极图案，但作为辅助电极的诸如金属或其合金的材料容易使精细金属掩模板粘连，没有量产性。根据该实施例，使用FMM蒸镀不会导致FMM粘连的第一有机材料层，且使用开放式掩模板蒸镀辅助电极材料，这在确保辅助电极的蒸镀位置准确的同时，可以使制造工艺简单且制造成本降低，还可以提高量产性。
根据本公开的示例性实施例，所述第一有机材料层的材料为折射率大于等于1.8的有机小分子材料。根据该示例性实施例，第一有机材料层可 以用作光取出层，具有大于等于1.8的较高折射率的有机小分子材料一方面便于蒸镀，另一方面有利于光的取出。
根据本公开的示例性实施例，所述第二有机材料层的材料为有机硅小分子材料。根据该实施例，使用有机硅小分子材料可以提高第二有机材料与辅助电极材料之间的不粘结性，进而提高辅助电极的定位准确性。
根据本公开的示例性实施例，所述辅助电极的材料为Ag、Al、或者包含Ag和Al中至少一种的合金。由于Ag和Al以及包含Ag和Al中至少一种的合金的蒸镀温度较低，在制造过程中易于实施，因此，使用Ag、Al或其合金作为辅助电极材料可以降低制造工艺难度和工艺成本。
根据本公开实施例的第二方面，提供一种OLED，包括：
位于像素限制层中的阳极、阴极层以及在所述阳极与所述阴极层之间的中间层；
位于所述阴极层上的图案化的第一有机材料层，所述第一有机材料层位于所述OLED的像素发光区域；
位于所述第一有机材料层上的图案化的第二有机材料层，其中所述第二有机材料层的材料不同于所述第一有机材料层的材料，并且所述第一有机材料层在与所述OLED的主平面垂直的方向上的投影与所述第二有机材料层在该方向上的投影重叠；以及
位于其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上的辅助电极，其中所述辅助电极在与所述OLED的主平面垂直的方向上的投影与所述第一有机材料层和所述第二有机材料层在该方向上的投影无重叠。
根据该方面，在OLED的阴极层上具有位于像素发光区域的第一和第二有机材料以及位于像素发光区域外侧的辅助电极。这样，辅助电极可以与阴极层搭接且不会影响光从像素发光区域的出射，有效地降低了OLED的电阻压降，提高OLED面板的均匀性。
根据本公开实施例的第三方面，提供一种OLED显示装置，包括多个根据第一方面所述的方法制造的OLED或者根据第二方面所述的OLED。
由上述技术方案可知，本公开实施例通过在OLED的阴极层上形成位于像素发光区域的第一和第二有机材料且在由此得到的结构上方形成辅助电极，可以利用辅助电极的材料与第二有机材料的不粘结性这一特性使得辅助电极在与OLED的主平面垂直的方向上的投影与第一有机材料层和第二有机材料层在该方向上的投影无重叠，从而使得辅助电极位于像素发光区域外侧。这样，辅助电极可以与阴极层搭接且不会影响光从像素发光区域的出射，有效地降低了OLED的电阻压降，提高OLED面板的均匀性。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍。显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本发明的限制。
图1是根据本公开实施例制备OLED的流程图；
图2是根据本公开实施例形成OLED的阳极、阴极层以及中间层的示意性截面图；
图3是根据本公开实施例在OLED的阴极层上形成第一有机材料层的示意性截面图；
图4是根据本公开实施例在第一有机材料层上形成第二有机材料层的示意性截面图；
图5是根据本公开实施例在形成有第一和第二有机材料层的阴极层上形成辅助电极的示意性截面图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本公开实施例的描述中，需要说明的是，术语“上”、“下”、“顶”、“底”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开实施例和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
根据本公开的示例性实施例，提供了一种OLED及其制备方法、以及OLED显示装置。
图1是根据本公开实施例制备OLED的流程图。如图1所示，该OLED的制备方法包括：
步骤S102：在像素限制层中形成阳极、阴极层以及位于阳极与阴极层之间的中间层；
步骤S104：在OLED的阴极层上形成图案化的第一有机材料层，该第一有机材料层位于OLED的像素发光区域；
步骤S106：在第一有机材料层上形成图案化的第二有机材料层，其中第二有机材料层的材料不同于第一有机材料层的材料，并且第一有机材料层在与OLED的主平面垂直的方向上的投影与第二有机材料层在该方向上的投影重叠；以及
步骤S108：在其上形成有图案化的第一有机材料层和图案化的第二有机材料层的阴极层上形成辅助电极，其中辅助电极在与OLED的主平面垂直的方向上的投影与第一有机材料层和第二有机材料层在该方向上的投影无重叠。
下面结合图2至图5对上述OLED的制备方法的各步骤以及所形成的结构进行详细描述。
如图2所示，在像素限制层10中形成阳极12、阴极层16以及位于阳极12与阴极层16之间的中间层14。中间层14可以包括空穴传输层、有机发光层与电子传输层等有机层。
接下来，在OLED的阴极层16上形成图案化的第一有机材料层18，该第一有机材料层18位于OLED的像素发光区域，在其他区域没有该第一有机材料。在该阶段，所形成的结构如图3所示。
可以利用掩模板蒸镀第一有机材料层18。在示例性实施例中，可以利用精细金属掩模板(FMM)在阴极层16上蒸镀第一有机材料层18，以提高第一有机材料层18的图案的精细度和定位精度，高效地将第一有机材料层18形成在OLED的像素发光区域。
第一有机材料层18可以作为光取出层。光取出层也称为阴极覆盖层，其厚度为λ/4n，其中λ为发光峰值波长，n为光取出层的折射率。光取出层的折射率越高，该层的透过率越大。然而，另一方面，透过率越大，微腔效应越弱。因此，对光取出层的要求之一是折射率匹配，在透过率和微腔效应之间进行折衷，这样的光取出层可以提高器件的效率。根据一个示例性实施例，光取出层的材料可以为具有较高折射率(例如，大于等于1.8的折射率)的有机小分子材料，例如，八羟基喹啉铝(Alq3)。
接下来，如图4所示，在第一有机材料层18上形成图案化的第二有机材料层20，其中第二有机材料层20的材料不同于第一有机材料层18的材料，并且第一有机材料层18在与OLED的主平面垂直的方向上的投影与第二有机材料层20在该方向上的投影重叠。在示例性实施例中，可以采用这样的有机材料来作为第二有机材料层20的材料：该有机材料能附着到第一有机材料层18的材料上，但不能附着到阴极层16的材料上。从而，第二有机材料层20与第一有机材料层18在垂直于OLED的主表面的方向上自对准。
这里，需要说明的是，本文中提到的某种材料“能附着到”另一种材料上，是指这两种材料之间具有粘结性。另一方面，本文中提到的某种材料“不能附着到”另一种材料上，是指这两种材料之间不具有粘结性，或者这两种材料之间具有不粘结性。
如图4所示，由于第二有机材料层20与第一有机材料层18自对准，第二有机材料层20同样形成在OLED的像素发光区域。
在一个示例性实施例中，可以同样利用精细金属掩模板在第一有机材料层18上形成图案化的第二有机材料层20，以提高第二有机材料层20的图案的精细度和定位精度，高效地将第二有机材料层20形成在OLED的像素发光区域。
在另一示例性实施例中，由于可以采用其材料能附着到第一有机材料层18的材料上而不能附着到阴极层16的材料上的第二有机材料层20，即，第二有机材料层20与第一有机材料层18可以实现自对准，因此，也可以使用开放式掩模板蒸镀第二有机材料层20。在这种情况下，由于开放式掩模板本身的制造简单容易，并且使用开放式掩模板进行蒸镀时不需要像使用精细金属掩模板那样进行高精度对准，因此制造工艺相对简单且制造成本低。
作为第二有机材料层20的构成材料，可以使用任何能附着到有机材料上而不能附着到阴极金属上的材料。在示例性实施例中，第二有机材料层20的材料可以为有机硅小分子材料，例如，异氰酸酯基硅烷、烷氧基硅聚氨酯等等。有机硅小分子材料具有良好的与接下来要在阴极层16上形成的辅助电极的材料之间的不粘结性，从而可以提高辅助电极的定位准确性。
接下来，如图5所示，在其上形成有图案化的第一有机材料层18和图案化的第二有机材料层20的阴极层16上形成辅助电极22，其中辅助电极22在与OLED的主平面垂直的方向上的投影与第一有机材料层18和第二有机材料层20在该方向上的投影无重叠。在示例性实施例中，可以采用这样的材料作为辅助电极22的材料：该材料不能附着到第二有机材料层20的材料上而能够附着到阴极层16的材料上，从而使得辅助电极22位于像素发光区域外侧的阴极层16上。
在示例性实施例中，可以利用开放式掩模板在其上形成有第一有机材料层18和第二有机材料层20的阴极层16上蒸镀辅助电极的材料。由于辅助电极22的材料能够附着到阴极层16的材料上且不能附着到第二有机材料层20的材料上，因此，可以简单地利用开放式掩模板，在阴极层16的位于第一有机材料层18和第二有机材料层20外侧的区域上，即，在阴极 层16的位于像素发光区域外侧的区域上，形成辅助电极22。
作为辅助电极22的构成材料，可以使用任何能够用作电极的材料。优选的，由于Ag和Al以及包含Ag和Al中至少一种的合金的蒸镀温度较低，在制造过程中易于实施，因此，可以使用Ag、Al或其合金作为辅助电极材料以降低制造工艺难度和成本。
根据本公开实施例，还可以预期包括多个上述OLED的OLED显示装置。
上面描述了本公开的示例性实施例。通过在OLED的阴极层上形成位于像素发光区域的第一和第二有机材料，由于第二有机材料的特殊性，其可以很好的附着在第一有机材料上，而金属材料不会附着于此类材料上。因此，可以使得精细的辅助电极位于像素发光区域的外侧，从而辅助电极与阴极层搭接且不会影响光从像素发光区域的出射，这有效地降低了OLED的电阻压降，提高了OLED面板的均匀性。
本公开的说明书中，说明了大量具体细节。然而，能够理解，本公开的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
最后应说明的是：以上实施例仅用以说明本公开的技术方案，而非对其限制；尽管参照前述实施例对本公开进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行各种修改、组合，或者对其中部分技术特征进行等同替换；而这些修改、组合或者替换，并不使相应技术方案的本质脱离本公开各实施例技术方案的精神和范围。

Claims (12)

  1. 一种OLED的制备方法，包括：
    在像素限制层中形成阳极、阴极层以及位于所述阳极与所述阴极层之间的中间层；
    在所述阴极层上形成图案化的第一有机材料层，所述第一有机材料层位于所述OLED的像素发光区域；
    在所述第一有机材料层上形成图案化的第二有机材料层，其中所述第二有机材料层的材料不同于所述第一有机材料层的材料，并且所述第一有机材料层在与所述OLED的主平面垂直的方向上的投影与所述第二有机材料层在该方向上的投影重叠；以及
    在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上形成辅助电极，其中所述辅助电极在与所述OLED的主平面垂直的方向上的投影与所述第一有机材料层和所述第二有机材料层在该方向上的投影无重叠。
  2. 根据权利要求1所述的制备方法，其中，所述在所述阴极层上形成图案化的第一有机材料层包括：利用精细金属掩模板在所述阴极层上蒸镀所述第一有机材料层。
  3. 根据权利要求1或2所述的制备方法，其中，所述在所述第一有机材料层上形成图案化的第二有机材料层包括：利用精细金属掩模板或开放式掩模板在所述第一有机材料层上蒸镀所述图案化的第二有机材料层。
  4. 根据权利要求1至3中任一项所述的制备方法，其中，所述在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上形成辅助电极包括：利用开放式掩模板在其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上蒸镀辅助电极的材料。
  5. 根据权利要求1至4中任一项所述的制备方法，其中，所述第一有机材料层的材料为折射率大于等于1.8的有机小分子材料。
  6. 根据权利要求1至5中任一项所述的制备方法，其中，所述第二有 机材料层的材料为有机硅小分子材料。
  7. 根据权利要求1至6中任一项所述的制备方法，其中，所述辅助电极的材料为Ag、Al、或者包含Ag和Al中至少一种的合金。
  8. 一种OLED，包括：
    位于像素限制层中的阳极、阴极层以及在所述阳极与所述阴极层之间的中间层；
    位于所述阴极层上的图案化的第一有机材料层，所述第一有机材料层位于所述OLED的像素发光区域；
    位于所述第一有机材料层上的图案化的第二有机材料层，其中所述第二有机材料层的材料不同于所述第一有机材料层的材料，并且所述第一有机材料层在与所述OLED的主平面垂直的方向上的投影与所述第二有机材料层在该方向上的投影重叠；以及
    位于其上形成有所述图案化的第一有机材料层和所述图案化的第二有机材料层的所述阴极层上的辅助电极，其中所述辅助电极在与所述OLED的主平面垂直的方向上的投影与所述第一有机材料层和所述第二有机材料层在该方向上的投影无重叠。
  9. 根据权利要求8所述的OLED的阴极结构，其中，所述第一有机材料层的材料为折射率大于等于1.8的有机小分子材料。
  10. 根据权利要求8或9所述的OLED的阴极结构，其中，所述第二有机材料层的材料为有机硅小分子材料。
  11. 根据权利要求8至10中任一项所述的OLED的阴极结构，其中，所述辅助电极的材料为Ag、Al、或者包含Ag和Al中至少一种的合金。
  12. 一种OLED显示装置，包括多个根据权利要求8至11中任一项所述的OLED。
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