WO2017159544A1 - ドライエッチング用組成物およびドライエッチング用組成物充填済み容器 - Google Patents
ドライエッチング用組成物およびドライエッチング用組成物充填済み容器 Download PDFInfo
- Publication number
- WO2017159544A1 WO2017159544A1 PCT/JP2017/009570 JP2017009570W WO2017159544A1 WO 2017159544 A1 WO2017159544 A1 WO 2017159544A1 JP 2017009570 W JP2017009570 W JP 2017009570W WO 2017159544 A1 WO2017159544 A1 WO 2017159544A1
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- WO
- WIPO (PCT)
- Prior art keywords
- composition
- dry etching
- fluorinated saturated
- saturated hydrocarbon
- amine compound
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 130
- 238000001312 dry etching Methods 0.000 title claims abstract description 96
- 229930195734 saturated hydrocarbon Natural products 0.000 claims abstract description 89
- -1 amine compound Chemical class 0.000 claims abstract description 67
- 238000009835 boiling Methods 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910000617 Mangalloy Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 229910000975 Carbon steel Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010962 carbon steel Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 description 27
- 239000007789 gas Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- IXHWZHXLJJPXIS-UHFFFAOYSA-N 2-fluorobutane Chemical compound CCC(C)F IXHWZHXLJJPXIS-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- IIADOUMJKYSCPM-UHFFFAOYSA-N 2,2-difluorobutane Chemical compound CCC(C)(F)F IIADOUMJKYSCPM-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- YHRLGIPTCSGMRF-UHFFFAOYSA-N 2-fluoropentane Chemical compound CCCC(C)F YHRLGIPTCSGMRF-UHFFFAOYSA-N 0.000 description 4
- PRNZBCYBKGCOFI-UHFFFAOYSA-N 2-fluoropropane Chemical compound CC(C)F PRNZBCYBKGCOFI-UHFFFAOYSA-N 0.000 description 4
- 239000002841 Lewis acid Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 150000007517 lewis acids Chemical class 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- FCBJLBCGHCTPAQ-UHFFFAOYSA-N 1-fluorobutane Chemical compound CCCCF FCBJLBCGHCTPAQ-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- PSSHQAXMSKKIBE-UHFFFAOYSA-N 1,1-difluoropentane Chemical compound CCCCC(F)F PSSHQAXMSKKIBE-UHFFFAOYSA-N 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- OFHQVNFSKOBBGG-UHFFFAOYSA-N 1,2-difluoropropane Chemical compound CC(F)CF OFHQVNFSKOBBGG-UHFFFAOYSA-N 0.000 description 2
- QSWGSLWFQDIXSH-UHFFFAOYSA-N 2,2-difluoropentane Chemical compound CCCC(C)(F)F QSWGSLWFQDIXSH-UHFFFAOYSA-N 0.000 description 2
- YZXSQDNPKVBDOG-UHFFFAOYSA-N 2,2-difluoropropane Chemical compound CC(C)(F)F YZXSQDNPKVBDOG-UHFFFAOYSA-N 0.000 description 2
- GRELHMBELDGGLT-UHFFFAOYSA-N 2,3-difluorobutane Chemical compound CC(F)C(C)F GRELHMBELDGGLT-UHFFFAOYSA-N 0.000 description 2
- DTFFVYXGHIUBRO-UHFFFAOYSA-N 2,3-difluoropentane Chemical compound CCC(F)C(C)F DTFFVYXGHIUBRO-UHFFFAOYSA-N 0.000 description 2
- XCOBDKDPJMSNPJ-UHFFFAOYSA-N 2,4-difluoropentane Chemical compound CC(F)CC(C)F XCOBDKDPJMSNPJ-UHFFFAOYSA-N 0.000 description 2
- GSMZLBOYBDRGBN-UHFFFAOYSA-N 2-fluoro-2-methylpropane Chemical compound CC(C)(C)F GSMZLBOYBDRGBN-UHFFFAOYSA-N 0.000 description 2
- JXCNTLHKVMUETO-UHFFFAOYSA-N 2-fluoro-3-methylbutane Chemical compound CC(C)C(C)F JXCNTLHKVMUETO-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- FBWYFZYJEAMPHJ-UHFFFAOYSA-N 3-fluoropentane Chemical compound CCC(F)CC FBWYFZYJEAMPHJ-UHFFFAOYSA-N 0.000 description 2
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 2
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 239000003729 cation exchange resin Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011973 solid acid Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- CXHPKSYTQFAXIN-UHFFFAOYSA-N 1,4-difluorobutane Chemical compound FCCCCF CXHPKSYTQFAXIN-UHFFFAOYSA-N 0.000 description 1
- CZJHAXLHYWLWBS-UHFFFAOYSA-N 1-fluoro-2,2-dimethylpropane Chemical compound CC(C)(C)CF CZJHAXLHYWLWBS-UHFFFAOYSA-N 0.000 description 1
- HQNOCESAXBXZAY-UHFFFAOYSA-N 1-fluoro-2-methylbutane Chemical compound CCC(C)CF HQNOCESAXBXZAY-UHFFFAOYSA-N 0.000 description 1
- WGCJTTUVWKJDAX-UHFFFAOYSA-N 1-fluoro-2-methylpropane Chemical compound CC(C)CF WGCJTTUVWKJDAX-UHFFFAOYSA-N 0.000 description 1
- TVHQEXCGMKZBME-UHFFFAOYSA-N 1-fluoro-3-methylbutane Chemical compound CC(C)CCF TVHQEXCGMKZBME-UHFFFAOYSA-N 0.000 description 1
- OEPRBXUJOQLYID-UHFFFAOYSA-N 1-fluoropentane Chemical compound CCCCCF OEPRBXUJOQLYID-UHFFFAOYSA-N 0.000 description 1
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical compound CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- XLJQPXVBQNJNLW-UHFFFAOYSA-N 1-methylaziridine Chemical compound CN1CC1 XLJQPXVBQNJNLW-UHFFFAOYSA-N 0.000 description 1
- LTHNHFOGQMKPOV-UHFFFAOYSA-N 2-ethylhexan-1-amine Chemical compound CCCCC(CC)CN LTHNHFOGQMKPOV-UHFFFAOYSA-N 0.000 description 1
- HLLCNVLEVVFTJB-UHFFFAOYSA-N 2-fluoro-2-methylbutane Chemical compound CCC(C)(C)F HLLCNVLEVVFTJB-UHFFFAOYSA-N 0.000 description 1
- ADKOKWOWUJDRJK-UHFFFAOYSA-N 3,3-difluoropentane Chemical compound CCC(F)(F)CC ADKOKWOWUJDRJK-UHFFFAOYSA-N 0.000 description 1
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- HTJDQJBWANPRPF-UHFFFAOYSA-N Cyclopropylamine Chemical compound NC1CC1 HTJDQJBWANPRPF-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical compound C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 1
- HONIICLYMWZJFZ-UHFFFAOYSA-N azetidine Chemical compound C1CNC1 HONIICLYMWZJFZ-UHFFFAOYSA-N 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- JACMPVXHEARCBO-UHFFFAOYSA-N n-pentylpentan-1-amine Chemical compound CCCCCNCCCCC JACMPVXHEARCBO-UHFFFAOYSA-N 0.000 description 1
- CATWEXRJGNBIJD-UHFFFAOYSA-N n-tert-butyl-2-methylpropan-2-amine Chemical compound CC(C)(C)NC(C)(C)C CATWEXRJGNBIJD-UHFFFAOYSA-N 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
- C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
- C09K15/16—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing nitrogen
- C09K15/18—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing nitrogen containing an amine or imine moiety
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Definitions
- the present invention relates to a dry etching composition and a container filled with the dry etching composition.
- composition containing a high concentration of a fluorinated saturated hydrocarbon such as 2-fluorobutane has been used as a dry etching gas (for example, see Patent Document 1).
- a composition containing fluorinated saturated hydrocarbons at a high concentration of, for example, 99% by volume or more may degrade the concentration of fluorinated saturated hydrocarbons due to decomposition of the fluorinated saturated hydrocarbons during storage or use.
- decomposition of fluorinated saturated hydrocarbons can be achieved by using a composition containing a high concentration of fluorinated saturated hydrocarbons and metals such as stainless steel and manganese steel, or aluminum oxide, silicon dioxide, zeolite, cation exchange resin ( This was likely to occur when contacting with a solid acid such as proton type.
- composition containing a high concentration of fluorinated saturated hydrocarbon has been required to suppress decomposition of the fluorinated saturated hydrocarbon during storage or use.
- the present inventor has intensively studied for the purpose of suppressing the decomposition of the fluorinated saturated hydrocarbon.
- the inventor newly found that if an amine compound is added to a composition containing a high concentration of fluorinated saturated hydrocarbon, the decomposition of the fluorinated saturated hydrocarbon can be suppressed over time.
- the present invention has been completed.
- the present invention aims to advantageously solve the above-mentioned problems, and the dry etching composition of the present invention is a dry etching composition containing 99% by volume or more of fluorinated saturated hydrocarbon. And further containing an amine compound.
- the concentration of the fluorinated saturated hydrocarbon can be measured using a gas chromatograph.
- the dry etching composition of the present invention is preferably an azeotropic composition or an azeotrope-like composition. If the dry etching composition is an azeotropic composition or an azeotrope-like composition, when the dry etching composition is vaporized and used, both the fluorinated saturated hydrocarbon and the amine compound are vaporized well, It can suppress that the composition of the composition for dry etching fluctuates during use.
- the “azeotropic composition” means a mixture in which the gas phase in equilibrium with the liquid phase shows the same composition as the liquid phase
- the “azeotropic composition” means the liquid phase and It means a mixture in which the gas phase at equilibrium shows a composition similar to the liquid phase.
- the absolute value of the difference between the boiling point of the fluorinated saturated hydrocarbon and the boiling point of the amine compound is preferably 25 ° C. or less. If the absolute value of the difference between the boiling point of the fluorinated saturated hydrocarbon and the boiling point of the amine compound is 25 ° C. or less, the composition of the dry etching composition varies when the dry etching composition is used in a gaseous state. Can be suppressed.
- the boiling point of the fluorinated saturated hydrocarbon and the boiling point of the amine compound can be measured under atmospheric pressure (1 atm) in accordance with JIS K2254.
- the amine compound is preferably composed of an amine having 3 to 5 carbon atoms.
- An amine having 3 to 5 carbon atoms is easy to handle and has an excellent effect of suppressing the decomposition of fluorinated saturated hydrocarbons.
- fluorinated saturated hydrocarbon containing the for dry etching composition of the present invention is not particularly limited, for example, C 3 H 7 F, C 3 H 6 F 2, C 4 H 9 F, C 4 H 8 F 2 , C 5 H 11 F, C 5 H 10 F 2 may be mentioned.
- the concentration of the amine compound is preferably 0.01% by volume or more and 1% by volume or less. If the density
- the concentration of the amine compound can be measured using a gas chromatograph.
- the above-mentioned composition for dry etching is filled in a container having at least an inner surface made of stainless steel, manganese steel, carbon steel, or chromium molybdenum steel, a container filled with the dry etching composition can be obtained.
- the maximum height (Rmax) of the inner surface of the container is preferably 25 ⁇ m or less.
- composition for dry etching of the present invention decomposition of fluorinated saturated hydrocarbons during storage or use can be suppressed.
- the composition for dry etching of the present invention is a composition containing a high concentration of fluorinated saturated hydrocarbon, and is not particularly limited.
- the dry etching composition for selectively dry etching a silicon nitride film is used. It can be particularly suitably used as an etching gas.
- the dry etching composition of the present invention contains a fluorinated saturated hydrocarbon and an amine compound. And since the composition for dry etching of this invention contains the amine compound, it can suppress that a fluorinated saturated hydrocarbon decomposes
- the member having a Lewis acid on the surface is not particularly limited, for example, a member made of metal such as stainless steel and manganese steel, aluminum oxide, silicon dioxide, zeolite, cation exchange resin (proton type), etc. The member which consists of these solid acids is mentioned.
- the fluorinated saturated hydrocarbon contained in the dry etching composition of the present invention is not particularly limited as long as it is a compound having a structure in which a part of hydrogen atoms of the saturated hydrocarbon is substituted with fluorine atoms.
- Known fluorinated saturated hydrocarbons suitable for etching can be used.
- the composition for dry etching of the present invention usually contains only one kind of fluorinated saturated hydrocarbon, but may contain two or more kinds of fluorinated saturated hydrocarbons.
- the fluorinated saturated hydrocarbon is preferably a fluorinated saturated hydrocarbon having 3 to 5 carbon atoms. This is because a fluorinated saturated hydrocarbon having 3 or more carbon atoms has a large effect of inhibiting decomposition by an amine compound (that is, it easily causes a decomposition reaction without an amine compound). Further, fluorinated saturated hydrocarbons having 6 or more carbon atoms have a high boiling point and are difficult to use as dry etching gases.
- fluorinated saturated hydrocarbon having a large decomposition inhibitory effect by the amine compound for example, C 3 H 7 F, C 3 H 6 F 2 , C 4 H 9 F , Fluorinated saturated hydrocarbons such as C 4 H 8 F 2 , C 5 H 11 F, C 5 H 10 F 2 .
- examples of the fluorinated saturated hydrocarbon having a molecular formula of C 3 H 7 F include 1-fluoropropane and 2-fluoropropane
- examples of the fluorinated saturated hydrocarbon having a molecular formula of C 3 H 6 F 2 include 1 1,2-difluoropropane, 1,2-difluoropropane and 2,2-difluoropropane
- examples of the fluorinated saturated hydrocarbon having a molecular formula of C 4 H 9 F include 1-fluorobutane, 2-fluorobutane, 1-fluoro-2-methylpropane and 2-fluoro-2-methylpropane.
- fluorinated saturated hydrocarbon having a C 4 H 8 F 2 examples include 1,4-difluorobutane, 2,2-difluorobutane, and 2,3-difluorobutane.
- fluorinated saturated hydrocarbons having a molecular formula of C 5 H 11 F include 1-fluoropentane, 2-fluoropentane, 3-fluoropentane, 1-fluoro-2-methylbutane, 1-fluoro-3-methylbutane, -Fluoro-2-methylbutane, 2-fluoro-3-methylbutane and 1-fluoro-2,2-dimethylpropane
- fluorinated saturated hydrocarbons having a molecular formula of C 5 H 10 F 2 include 1,5- Examples include difluoropentane, 2,2-difluoropentane, 3,3-difluoropentane, 2,3-difluoropentane, and 2,4-difluoropentane.
- examples of the fluorinated saturated hydrocarbon having a particularly large effect of inhibiting decomposition by the amine compound include fluorinated saturated hydrocarbons in which no fluorine atom is bonded to the carbon atom at the molecular end.
- examples of the fluorinated saturated hydrocarbon having a particularly large effect of inhibiting decomposition by the amine compound include 2-fluoropropane, 2,2-difluoropropane, 2-fluorobutane, 2-fluoro-2-methylpropane, 2,2-difluorobutane, 2,3-difluorobutane, 2-fluoropentane, 3-fluoropentane, 2-fluoro-2-methylbutane, 2-fluoro-3-methylbutane, 2,2-difluoropentane, 3,3- Examples include difluoropentane, 2,3-difluoropentane, and 2,4-difluoropentane.
- the concentration of the fluorinated saturated hydrocarbon in the dry etching composition of the present invention can be appropriately adjusted as long as it is 99% by volume or more, but is preferably 99.50% by volume or more. More preferably, it is at least 80% by volume, even more preferably at least 99.85% by volume, and particularly preferably at least 99.90% by volume.
- any amine compound selected from the group consisting of primary amines, secondary amines and tertiary amines can be used.
- the amine compound include methylamine, ethylamine, ethyleneimine, n-propylamine, isopropylamine, cyclopropylamine, azetidine, 1-methylaziridine, n-butylamine, isobutylamine, t-butylamine, n- Pentylamine, n-hexylamine, 2-ethylhexylamine, n-nonylamine, n-decylamine, benzylamine, cyclohexylamine, aniline, dimethylamine, diethylamine, ethylmethylamine, di-n-propylamine, diisopropylamine, di- n-butylamine, di-t-butylamine, di-n-pent
- an amine compound having 3 to 5 carbon atoms is preferable, and an amine compound having 3 or 4 carbon atoms is more preferable. This is because amine compounds having 3 to 5 carbon atoms are easy to handle. Moreover, it is because the amine compound having 5 or less carbon atoms is easily adsorbed on a Lewis acid or the like and is excellent in the effect of suppressing the decomposition of fluorinated saturated hydrocarbons.
- the amine compound is preferably a liquid at normal temperature and pressure.
- the melting point of the amine compound is preferably 10 ° C. or lower and more preferably 0 ° C. or lower under atmospheric pressure (1 atm).
- the boiling point of the amine compound is preferably 25 ° C. or higher, more preferably 30 ° C. or higher, preferably 50 ° C. or lower, and 40 ° C. or lower under atmospheric pressure (1 atm). Is more preferable.
- the absolute value of the difference between the boiling point of the fluorinated saturated hydrocarbon and the boiling point of the amine compound is preferably 25 ° C. or less, more preferably 20 ° C. or less, and more preferably 10 ° C. or less. Is more preferable. If the absolute value of the difference between the boiling point of the fluorinated saturated hydrocarbon and the boiling point of the amine compound is small, both the fluorinated saturated hydrocarbon and the amine compound are vaporized well at the operating temperature of the dry etching composition. It is because it can suppress that the composition of the composition for dry etching changes inside.
- the concentration of the amine compound in the dry etching composition of the present invention is usually 1% by volume or less, preferably 0.01% by volume or more and 1% by volume or less, preferably 0.01% by volume or more and 0% by volume. It is more preferable that it is 15 volume% or less, and it is still more preferable that it is 0.01 volume% or more and 0.1 volume% or less. This is because the decomposition of the fluorinated saturated hydrocarbon can be sufficiently suppressed when the concentration of the amine compound is 0.01% by volume or more.
- the concentration of the amine compound is 1% by volume or less, it is possible to sufficiently increase the concentration of the fluorinated saturated hydrocarbon in the composition for dry etching while sufficiently suppressing the decomposition of the fluorinated saturated hydrocarbon. Because it becomes.
- the dry etching composition of the present invention is preferably an azeotropic composition or an azeotrope-like composition. If the dry etching composition is an azeotropic composition or an azeotrope-like composition, when the dry etching composition is vaporized and used for dry etching, the composition of the dry etching composition varies during use. It is because it can suppress.
- the composition for dry etching can be made into an azeotropic composition or an azeotrope-like composition by selecting suitably the combination of the kind and density
- composition for dry etching of this invention is not specifically limited,
- the fluorinated saturated hydrocarbon mentioned above and an amine compound can be mixed and prepared by a known method.
- the dry etching composition of the present invention may contain components other than fluorinated saturated hydrocarbons and amine compounds, but the dry etching composition of the present invention comprises fluorinated saturated hydrocarbons and amine compounds. It is preferable to prepare a mixture of only these. That is, the dry etching composition of the present invention preferably contains only fluorinated saturated hydrocarbons, amine compounds, and impurities inevitably mixed when preparing the dry etching composition.
- the prepared composition for dry etching of the present invention is not particularly limited, for example, in a container having at least an inner surface made of metal (for example, stainless steel, manganese steel, carbon steel, chrome molybdenum steel, etc.). Can be filled and stored. Under the present circumstances, since the composition for dry etching of this invention contains the amine compound, decomposition
- the container having at least an inner surface made of metal may be a container in which at least the inner surface portion of the container is made of a metal such as stainless steel, manganese steel, carbon steel, or chrome molybdenum steel, and the entire container is not necessarily made of metal. It does not have to be.
- the inner surface of the container whose inner surface is made of metal may be subjected to polishing treatment such as barrel polishing treatment.
- the maximum height (Rmax) of the inner surface of the container is preferably 25 ⁇ m or less, more preferably 5 ⁇ m or less. Although there is no particular lower limit value for the maximum height (Rmax) of the inner surface of the container, it is usually 1 ⁇ m or more. The maximum height of the inner surface of the container can be measured using a surface roughness measuring device.
- Apparatus Agilent (registered trademark) 7890A (manufactured by Agilent) Column: manufactured by GL Sciences, product name “Inert Cap (registered trademark) 1”, length 60 m, inner diameter 0.25 mm, film thickness 1.5 ⁇ m -Column temperature: held at 40 ° C for 20 minutes-Injection temperature: 80 ° C Carrier gas: Nitrogen Split ratio: 40/1 ⁇ Detector: FID ⁇ Stability of dry etching composition> The stability of the composition for dry etching was provided with a filter made of alumina ceramic (Pureron Japan, model: PDF-3-02SW • PC07) and a mass flow controller (Horiba Estec, MODEL: SEC-2511X).
- Evaluation was performed using a stability evaluation apparatus in which a composition-filled container and a gas chromatograph were connected with a pipe made of SUS-316. Specifically, after the prepared dry etching composition is filled in a composition filling container, the dry etching composition is gas chromatographed from the composition filling container in a state where an alumina ceramic filter is heated to 50 ° C. with a heater. The concentration of fluorinated saturated hydrocarbons in the dry etching composition that passed through the filter and flowed into the gas chromatograph was measured.
- the concentration (C 0 ) of the fluorinated saturated hydrocarbon in the prepared dry etching composition and the concentration (C 1 ) of the fluorinated saturated hydrocarbon in the dry etching composition flowing into the gas chromatograph In comparison, the presence or absence of decomposition of the fluorinated saturated hydrocarbon was confirmed.
- a composition filling container a container made of manganese steel (Rmax on the inner surface: 25 ⁇ m or less) was used as a composition filling container.
- the gas chromatograph and conditions used for measuring the concentration (C 1 ) of the fluorinated saturated hydrocarbon are as follows.
- Example 1 2-Fluorobutane as a fluorinated saturated hydrocarbon and an amine compound shown in Table 1 were mixed to prepare a composition for dry etching (including impurities inevitably mixed). And about the composition for dry etching, while measuring the density
- Example 1 Measurement and evaluation were carried out in the same manner as in Example 1 except that a composition for dry etching consisting of only 2-fluorobutane and inevitably mixed impurities was used without using an amine compound. The results are shown in Table 1.
- Example 4 2,2-Difluorobutane as a fluorinated saturated hydrocarbon and an amine compound shown in Table 2 were mixed to prepare a composition for dry etching (including impurities inevitably mixed). And about the composition for dry etching, while measuring the density
- Example 4 Measurement and evaluation were performed in the same manner as in Example 4 except that a dry etching composition consisting of only 2,2-difluorobutane and inevitably mixed impurities was used without using an amine compound. The results are shown in Table 2.
- Example 5 1-Fluorobutane as a fluorinated saturated hydrocarbon and an amine compound shown in Table 3 were mixed to prepare a composition for dry etching (including impurities inevitably mixed). And about the composition for dry etching, while measuring the density
- Example 7 2-Fluoropentane as a fluorinated saturated hydrocarbon and an amine compound shown in Table 4 were mixed to prepare a dry etching composition (including impurities inevitably mixed). And about the composition for dry etching, while measuring the density
- Example 7 Measurement and evaluation were carried out in the same manner as in Example 7 except that a dry etching composition consisting of 2-fluoropentane and inevitably mixed impurities was used without using an amine compound. The results are shown in Table 4.
- Example 8 2-Fluoropropane as a fluorinated saturated hydrocarbon and an amine compound shown in Table 5 were mixed to prepare a composition for dry etching (including impurities inevitably mixed). And about the composition for dry etching, while measuring the density
- Example 8 Measurement and evaluation were performed in the same manner as in Example 8 except that a dry etching composition consisting of only 2-fluoropropane and inevitably mixed impurities was used without using an amine compound. The results are shown in Table 5.
- Tables 1 to 5 indicate that the decomposition of fluorinated saturated hydrocarbons is suppressed in the dry etching compositions of Examples 1 to 8 containing an amine compound.
- Example 9 to 18 and Comparative Examples 9 to 14 A composition for dry etching (including impurities inevitably mixed) having the composition shown in Table 6 was prepared. Moreover, a gas-filled container (Rmax on the inner surface: 25 ⁇ m or less) made of the material shown in Table 6 was prepared. Next, the prepared gas-filled container was filled with the dry etching composition and allowed to stand at a temperature of 55 ° C. for 30 days. And the density
- gas chromatograph used for the measurement of the density
- concentration of a fluorinated saturated hydrocarbon and conditions are as follows.
- Carrier gas Nitrogen Split ratio: 40/1 ⁇ Detector: FID
- Table 6 shows that in the dry etching compositions of Examples 9 to 18 containing an amine compound, decomposition of the fluorinated saturated hydrocarbon is suppressed.
- dry etching composition of the present invention decomposition of fluorinated saturated hydrocarbons during storage or use can be suppressed.
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Abstract
Description
なお、本発明において、フッ素化飽和炭化水素の濃度は、ガスクロマトグラフを用いて測定することができる。
なお、本発明において、「共沸組成物」とは、液相と平衡にある気相が液相と同一の組成を示す混合物を意味し、「共沸様組成物」とは、液相と平衡にある気相が液相と類似の組成を示す混合物を意味する。
なお、本発明において、フッ素化飽和炭化水素の沸点およびアミン化合物の沸点は、JIS K2254に準拠して大気圧(1atm)下で測定することができる。
なお、本発明において、アミン化合物の濃度は、ガスクロマトグラフを用いて測定することができる。
ここで、前記容器の内面の最大高さ(Rmax)は、25μm以下であることが好ましい。
ここで、本発明のドライエッチング用組成物は、フッ素化飽和炭化水素を高濃度で含有する組成物であり、特に限定されることなく、例えば窒化シリコン膜を選択的にドライエッチングする際のドライエッチング用ガスとして特に好適に用いることができる。
本発明のドライエッチング用組成物は、フッ素化飽和炭化水素と、アミン化合物とを含有する。そして、本発明のドライエッチング用組成物は、アミン化合物を含有しているので、保管中または使用中にフッ素化飽和炭化水素が分解するのを抑制することができる。
ここで、フッ素化飽和炭化水素が分解するのを抑制することができる理由は、明らかではないが、アミン化合物が、ドライエッチング用組成物の保管中または使用中にドライエッチング用組成物が接触する部材の表面に存在するルイス酸に吸着することにより、ルイス酸を触媒としたフッ素化飽和炭化水素の分解反応(例えば、脱HF反応)が発生するのを抑制するためにフッ素化飽和炭化水素の分解が抑制されると推察される。なお、ルイス酸を表面に有する部材としては、特に限定されることなく、例えば、ステンレス鋼およびマンガン鋼などの金属からなる部材、酸化アルミニウム、二酸化ケイ素、ゼオライト、陽イオン交換樹脂(プロトン型)などの固体酸からなる部材が挙げられる。
本発明のドライエッチング用組成物が含有するフッ素化飽和炭化水素としては、飽和炭化水素の水素原子の一部がフッ素原子で置換された構造を有する化合物であれば特に限定されることなく、ドライエッチング用に適した既知のフッ素化飽和炭化水素を用いることができる。
なお、本発明のドライエッチング用組成物は、通常、1種類のフッ素化飽和炭化水素のみを含有するが、2種類以上のフッ素化飽和炭化水素を含有していてもよい。
中でも、アミン化合物による分解抑制効果が大きい(即ち、アミン化合物無しでは分解反応を起こし易い)フッ素化飽和炭化水素としては、例えばC3H7F、C3H6F2、C4H9F、C4H8F2、C5H11F、C5H10F2などのフッ素化飽和炭化水素が挙げられる。
また、分子式がC4H9Fのフッ素化飽和炭化水素としては、1-フルオロブタン、2-フルオロブタン、1-フルオロ-2-メチルプロパンおよび2-フルオロ-2-メチルプロパンが挙げられ、分子式がC4H8F2のフッ素化飽和炭化水素としては、1,4-ジフルオロブタン、2,2-ジフルオロブタン、2,3-ジフルオロブタンが挙げられる。
更に、分子式がC5H11Fのフッ素化飽和炭化水素としては、1-フルオロペンタン、2-フルオロペンタン、3-フルオロペンタン、1-フルオロ-2-メチルブタン、1-フルオロ-3-メチルブタン、2-フルオロ-2-メチルブタン、2-フルオロ-3-メチルブタンおよび1-フルオロ-2,2-ジメチルプロパンが挙げられ、分子式がC5H10F2のフッ素化飽和炭化水素としては、1,5-ジフルオロペンタン、2,2-ジフルオロペンタン、3,3-ジフルオロペンタン、2,3-ジフルオロペンタン、2,4-ジフルオロペンタンが挙げられる。
アミン化合物としては、第一級アミン、第二級アミンおよび第三級アミンからなる群より選択される任意のアミン化合物を用いることができる。
具体的には、アミン化合物としては、メチルアミン、エチルアミン、エチレンイミン、n-プロピルアミン、イソプロピルアミン、シクロプロピルアミン、アゼチジン、1-メチルアジリジン、n-ブチルアミン、イソブチルアミン、t-ブチルアミン、n-ペンチルアミン、n-ヘキシルアミン、2-エチルヘキシルアミン、n-ノニルアミン、n-デシルアミン、ベンジルアミン、シクロヘキシルアミン、アニリン、ジメチルアミン、ジエチルアミン、エチルメチルアミン、ジ-n-プロピルアミン、ジイソプロピルアミン、ジ-n-ブチルアミン、ジ-t-ブチルアミン、ジ-n-ペンチルアミン、トリメチルアミン、ジメチルエチルアミン、トリエチルアミン、トリ-n-プロピルアミン、トリイソプロピルアミン、アザシクロブタン、ピロリジン、ピペリジン、ヘキサメチレンイミン、エチレンジアミン、プロピレンジアミン、テトラメチレンジアミン、N,N,N’,N’-テトラメチルエチレンジアミン、ピリジン、2-メチルピリジン、3-メチルピリジン、4-メチルピリジン等が挙げられる。
なお、アミン化合物は、一種類を単独で用いてもよいし、二種類以上を組み合わせて用いてもよい。
そして、本発明のドライエッチング用組成物は、共沸組成物または共沸様組成物であることが好ましい。ドライエッチング用組成物が共沸組成物または共沸様組成物であれば、ドライエッチング用組成物を気化させてドライエッチングに使用する際に、ドライエッチング用組成物の組成が使用中に変動するのを抑制することができるからである。
なお、ドライエッチング用組成物は、組成物中に含まれている成分の種類および濃度などの組み合わせを適宜に選択することにより共沸組成物または共沸様組成物とすることができる。
そして、本発明のドライエッチング用組成物は、特に限定されることなく、上述したフッ素化飽和炭化水素とアミン化合物とを既知の方法で混合して調製することができる。
なお、少なくとも内表面が金属からなる容器とは、少なくとも容器の内表面部分が、ステンレス鋼、マンガン鋼、炭素鋼またはクロムモリブデン鋼などの金属からなる容器であればよく、必ずしも容器全体が金属からなるものでなくてもよいという意味である。また、少なくとも内表面が金属からなる容器の内面には、バレル研磨処理などの研磨処理が施されていてもよい。更に、容器の内面の最大高さ(Rmax)は、好ましくは25μm以下、より好ましくは5μm以下である。容器の内面の最大高さ(Rmax)の下限値は特にないが、通常は1μm以上である。容器の内面の最大高さは、表面粗さ測定装置を用いて測定することができる。
そして、実施例および比較例において、フッ素化飽和炭化水素、アミン化合物およびその他の化合物の濃度、並びに、ドライエッチング用組成物の安定性は、下記の方法で測定および評価した。
調製したドライエッチング用組成物について、ガスクロマトグラフィーによりフッ素化飽和炭化水素の濃度、アミン化合物の濃度およびその他の化合物の濃度を測定した。
なお、濃度の測定に使用した装置(ガスクロマトグラフ)および条件は以下のとおりである。
・装置:Agilent(登録商標)7890A(アジレント社製)
・カラム:ジーエルサイエンス社製、製品名「Inert Cap(登録商標)1」、長さ60m、内径0.25mm、膜厚1.5μm
・カラム温度:40℃で20分間保持
・インジェクション温度:80℃
・キャリヤーガス:窒素
・スプリット比:40/1
・検出器:FID
<ドライエッチング用組成物の安定性>
ドライエッチング用組成物の安定性は、アルミナセラミック製のフィルター(ピュアロンジャパン社製、型式:PDF-3-02SW・PC07)およびマスフローコントローラー(堀場エステック社製、MODEL:SEC-2511X)を設けたSUS-316製配管で組成物充填容器とガスクロマトグラフとを連結してなる安定性評価装置を用いて評価した。
具体的には、調製したドライエッチング用組成物を組成物充填容器に充填した後、アルミナセラミック製のフィルターをヒーターで50℃に加熱した状態でドライエッチング用組成物を組成物充填容器からガスクロマトグラフへと流し、フィルターを通過してガスクロマトグラフへと流入したドライエッチング用組成物中のフッ素化飽和炭化水素の濃度を測定した。そして、調製したドライエッチング用組成物中のフッ素化飽和炭化水素の濃度(C0)と、ガスクロマトグラフへと流入したドライエッチング用組成物中のフッ素化飽和炭化水素の濃度(C1)とを比較し、フッ素化飽和炭化水素の分解の有無を確認した。
なお、組成物充填容器としては、マンガン鋼製の容器(内面のRmax:25μm以下)を用いた。また、フッ素化飽和炭化水素の濃度(C1)の測定に使用したガスクロマトグラフおよび条件は以下のとおりである。
・ガスクロマトグラフ:Agilent(登録商標)7890A(アジレント社製)
・カラム:ジーエルサイエンス社製、製品名「Inert Cap(登録商標)1」、長さ60m、内径0.25mm、膜厚1.5μm
・カラム温度:40℃で20分間保持
・インジェクション温度:80℃
・キャリヤーガス:窒素
・スプリット比:40/1
・検出器:FID
フッ素化飽和炭化水素としての2-フルオロブタンと、表1に示すアミン化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表1に示す。
アミン化合物を使用することなく、2-フルオロブタンおよび不可避的に混入した不純物のみからなるドライエッチング用組成物を用いた以外は実施例1と同様にして、測定および評価を行った。結果を表1に示す。
アミン化合物を使用することなく、フッ素化飽和炭化水素としての2-フルオロブタンと、表1に示すその他の化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表1に示す。
フッ素化飽和炭化水素としての2,2-ジフルオロブタンと、表2に示すアミン化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表2に示す。
アミン化合物を使用することなく、2,2-ジフルオロブタンおよび不可避的に混入した不純物のみからなるドライエッチング用組成物を用いた以外は実施例4と同様にして、測定および評価を行った。結果を表2に示す。
アミン化合物を使用することなく、フッ素化飽和炭化水素としての2,2-ジフルオロブタンと、表2に示すその他の化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表2に示す。
フッ素化飽和炭化水素としての1-フルオロブタンと、表3に示すアミン化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表3に示す。
アミン化合物を使用することなく、1-フルオロブタンおよび不可避的に混入した不純物のみからなるドライエッチング用組成物を用いた以外は実施例5と同様にして、測定および評価を行った。結果を表3に示す。
フッ素化飽和炭化水素としての2-フルオロペンタンと、表4に示すアミン化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表4に示す。
アミン化合物を使用することなく、2-フルオロペンタンおよび不可避的に混入した不純物のみからなるドライエッチング用組成物を用いた以外は実施例7と同様にして、測定および評価を行った。結果を表4に示す。
フッ素化飽和炭化水素としての2-フルオロプロパンと、表5に示すアミン化合物とを混合してドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。そして、ドライエッチング用組成物について、含有されている化合物の濃度を測定すると共に、安定性を評価した。結果を表5に示す。
アミン化合物を使用することなく、2-フルオロプロパンおよび不可避的に混入した不純物のみからなるドライエッチング用組成物を用いた以外は実施例8と同様にして、測定および評価を行った。結果を表5に示す。
表6に示す組成のドライエッチング用組成物(不可避的に混入した不純物を含む)を調製した。また、表6に示す材質のガス充填容器(内面のRmax:25μm以下)を準備した。
次に、準備したガス充填容器にドライエッチング用組成物を充填し、温度55℃で30日間静置した。そして、静置後のフッ素化飽和炭化水素の濃度をガスクロマトグラフで測定し、フッ素化飽和炭化水素の分解量を算出した。結果を表6に示す。
なお、フッ素化飽和炭化水素の濃度の測定に使用したガスクロマトグラフおよび条件は以下のとおりである。
・ガスクロマトグラフ:Agilent(登録商標)7890A(アジレント社製)
・カラム:ジーエルサイエンス社製、製品名「Inert Cap(登録商標)1」、長さ60m、内径0.25mm、膜厚1.5μm
・カラム温度:40℃で20分間保持
・インジェクション温度:80℃
・キャリヤーガス:窒素
・スプリット比:40/1
・検出器:FID
「SUS」は、ステンレス鋼を示し
「Mn」はマンガン鋼を示し
「CrMo」はクロムモリブデン鋼を示す。
Claims (8)
- フッ素化飽和炭化水素を99体積%以上含有するドライエッチング用組成物であって、
アミン化合物を更に含有する、ドライエッチング用組成物。 - 共沸組成物または共沸様組成物である、請求項1に記載のドライエッチング用組成物。
- 前記フッ素化飽和炭化水素の沸点と、前記アミン化合物の沸点との差の絶対値が25℃以下である、請求項1または2に記載のドライエッチング用組成物。
- 前記アミン化合物が、炭素数が3以上5以下のアミンよりなる、請求項1~3の何れかに記載のドライエッチング用組成物。
- 前記フッ素化飽和炭化水素が、C3H7F、C3H6F2、C4H9F、C4H8F2、C5H11FまたはC5H10F2である、請求項1~4の何れかに記載のドライエッチング用組成物。
- 前記アミン化合物の濃度が0.01体積%以上1体積%以下である、請求項1~5の何れかに記載のドライエッチング用組成物。
- 少なくとも内表面が、ステンレス鋼、マンガン鋼、炭素鋼またはクロムモリブデン鋼からなる容器に請求項1~6の何れかに記載のドライエッチング用組成物を充填してなる、ドライエッチング用組成物充填済み容器。
- 前記容器の内面の最大高さ(Rmax)が、25μm以下である、請求項7に記載のドライエッチング用組成物充填済み容器。
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US16/079,651 US20190055469A1 (en) | 2016-03-15 | 2017-03-09 | Dry etching composition and dry etching composition-filled container |
CN201780013647.XA CN108701611A (zh) | 2016-03-15 | 2017-03-09 | 干蚀刻用组合物及已填充干蚀刻用组合物的容器 |
EP17766545.2A EP3432347A4 (en) | 2016-03-15 | 2017-03-09 | DRYING COMPOSITION AND CONTAINER OF DRYING COMPOSITION OF FILLED CONTAINERS |
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KR20210131896A (ko) | 2020-04-24 | 2021-11-03 | 샌트랄 글래스 컴퍼니 리미티드 | 조성물의 공급방법, 조성물, 공급장치 및 조성물의 충전방법 |
WO2021221036A1 (ja) * | 2020-04-28 | 2021-11-04 | セントラル硝子株式会社 | 組成物の供給方法、組成物及びドライエッチング方法 |
JP7485922B2 (ja) | 2020-04-24 | 2024-05-17 | セントラル硝子株式会社 | 組成物の供給方法、組成物、供給装置及び組成物の充填方法 |
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JPWO2020153066A1 (ja) * | 2019-01-23 | 2021-12-02 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング剤、及びその保存容器 |
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CN108701611A (zh) | 2018-10-23 |
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