WO2017154619A1 - ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法 - Google Patents

ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法 Download PDF

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Publication number
WO2017154619A1
WO2017154619A1 PCT/JP2017/007103 JP2017007103W WO2017154619A1 WO 2017154619 A1 WO2017154619 A1 WO 2017154619A1 JP 2017007103 W JP2017007103 W JP 2017007103W WO 2017154619 A1 WO2017154619 A1 WO 2017154619A1
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WIPO (PCT)
Prior art keywords
adhesive layer
pressure
sensitive adhesive
dicing
film
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PCT/JP2017/007103
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English (en)
French (fr)
Japanese (ja)
Inventor
鈴木　英明
さやか 土山
明徳 佐藤
なつき 仲秋
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to KR1020187025535A priority Critical patent/KR102637302B1/ko
Priority to CN201780015580.3A priority patent/CN108713241B/zh
Priority to SG11201807714QA priority patent/SG11201807714QA/en
Priority to JP2018504372A priority patent/JP6805233B2/ja
Publication of WO2017154619A1 publication Critical patent/WO2017154619A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to a dicing die bonding sheet, a semiconductor chip manufacturing method, and a semiconductor device manufacturing method.
  • the dicing die bonding sheet is configured to include, for example, a pressure-sensitive adhesive layer and a film adhesive on a base material in this order, and is used by being attached to a semiconductor wafer with the film adhesive.
  • the semiconductor wafer fixed on the dicing die bonding sheet is divided together with the pressure-sensitive adhesive layer and the film adhesive by dicing, and is separated into semiconductor chips. Thereafter, for example, when the pressure-sensitive adhesive layer is curable, the pressure-sensitive adhesive layer is cured to reduce the pressure-sensitive adhesive property, and the semiconductor chip provided with the cut film adhesive is bonded to the cured adhesive layer. It is separated from the agent layer and picked up.
  • the picked-up semiconductor chip is die-bonded to the circuit surface of the substrate with a film-like adhesive, and if necessary, one or more other semiconductor chips are stacked on the semiconductor chip and wire-bonded. Is sealed with resin. A semiconductor device of interest is finally manufactured using the semiconductor package thus obtained.
  • Dicing is performed, for example, by using a dicing blade and cutting the semiconductor wafer while rotating it.
  • cutting chips are generated because the semiconductor wafer and at least a part of the dicing die bonding sheet are cut by the dicing blade.
  • dicing is performed while washing the incision site with water, the cutting chips cannot be washed away completely. Therefore, if the amount of cutting chips is large, a part of the chip is obtained after dicing, and this semiconductor chip. It tends to adhere to the cut film adhesive provided in the chip and remain.
  • the semiconductor chip provided with the film adhesive after cutting may not be normally picked up if the cutting waste remains in this way. That is, if a large amount of cutting waste is generated at the time of dicing, it causes a pickup failure.
  • a pressure-sensitive adhesive tape for fixing a semiconductor wafer comprising a radiation curable acrylic pressure-sensitive adhesive layer on a base film is disclosed (see Patent Document 1). This tape corresponds to a dicing sheet.
  • a film adhesive that is, a die bond film is further provided on the pressure-sensitive adhesive layer and used for dicing.
  • Patent Document 1 when dicing using a dicing blade is performed, generation of cutting waste can be suppressed by using the dicing sheet described in the above document (that is, an adhesive tape for fixing a semiconductor wafer). Although disclosed, the pick-up suitability of the semiconductor chip provided with the film adhesive is not disclosed.
  • the present invention provides a dicing die bonding sheet capable of reducing the amount of cutting waste generated during dicing of a semiconductor wafer using a dicing blade and suppressing the occurrence of pick-up failure of a semiconductor chip having a film adhesive, and the dicing die bonding sheet.
  • An object of the present invention is to provide a method for manufacturing a semiconductor chip and a method for manufacturing a semiconductor device using the semiconductor chip.
  • the present invention comprises a pressure-sensitive adhesive layer on a substrate, a film-like adhesive on the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer has a thickness of 20 ⁇ m to 50 ⁇ m,
  • a dicing die bonding sheet in which the adhesive layer has a breaking elongation of 5 to 50%.
  • the pressure-sensitive adhesive layer is preferably non-energy ray curable.
  • the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer to the film adhesive is preferably 35 to 300 mN / 25 mm.
  • this invention is a manufacturing method of a semiconductor chip using the said dicing die bonding sheet
  • the present invention after performing the step of forming the semiconductor chip by the manufacturing method of the semiconductor chip, to the dicing die bonding sheet after the formation of the notches, while applying force from the substrate side, Provided is a method for manufacturing a semiconductor device, comprising a step of separating the semiconductor chip from the pressure-sensitive adhesive layer together with the film adhesive after cutting.
  • a dicing die bonding sheet capable of reducing the generation amount of cutting waste and suppressing the occurrence of pickup failure of a semiconductor chip provided with a film adhesive, and A semiconductor chip manufacturing method and a semiconductor device manufacturing method using the same are provided.
  • the dicing die bonding sheet of the present invention comprises a pressure-sensitive adhesive layer on a substrate, a film-like adhesive on the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer has a thickness of 20 ⁇ m to 50 ⁇ m.
  • the agent layer has an elongation at break of 5 to 50%.
  • the dicing die bonding sheet of the present invention is a semiconductor chip (in the present specification, “film-like”) having a dicing using a dicing blade of a semiconductor wafer (that is, blade dicing) and subsequent film-like adhesive after cutting. It is suitable for use in picking up a semiconductor chip with an adhesive).
  • the semiconductor wafer is cut by rotating the dicing blade.
  • cutting waste is generated from one of the layers of the semiconductor wafer and the dicing die bonding sheet, and is not suspended from any of the above-mentioned layers, such as powder, fiber, etc. , Which remains as a whisker. If the amount of the generated cutting waste is large, a part thereof is likely to remain attached to the semiconductor chip or the cut film adhesive. If the cutting waste remains in this way, the semiconductor chip with a film adhesive may not be picked up normally, which causes a pickup failure. Even if the pickup can be picked up, the semiconductor device manufactured with the cutting chips remaining may not function normally.
  • the dicing die bonding sheet of the present invention is such that the thickness of the adhesive layer and the elongation at break are within the above ranges, so that the amount of cutting waste generated during dicing of a semiconductor wafer using a dicing blade Can be reduced. Thereby, it is possible to suppress the occurrence of pickup failure of the semiconductor chip with a film adhesive.
  • each layer constituting the dicing die bonding sheet of the present invention will be described first.
  • the constituent material of the base material is preferably various resins.
  • polyethylene low density polyethylene (abbreviated as LDPE), linear low density polyethylene (abbreviated as LLDPE))
  • High density polyethylene may be abbreviated as HDPE)
  • polypropylene polybutene, polybutadiene, polymethylpentene, styrene / ethylene butylene / styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, poly Butylene terephthalate, polyurethane, polyurethane acrylate, polyimide, ethylene vinyl acetate copolymer, ionomer resin, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, vinyl Fluororesin, hydrogenated product of any of these resins, modified products
  • (meth) acrylic acid is a concept including both “acrylic acid” and “methacrylic acid”.
  • (meth) acrylate is a concept including both “acrylate” and “methacrylate”
  • (meth) acryloyl group” Is a concept including both “acryloyl group” and “methacryloyl group”.
  • the resin constituting the substrate may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and ratio thereof can be arbitrarily selected.
  • the substrate may be composed of one layer (that is, a single layer) or may be composed of two or more layers.
  • a base material consists of multiple layers, these multiple layers may be the same or different from each other. That is, all the layers may be the same, all the layers may be different, or only some of the layers may be the same. And when a several layer differs from each other, the combination of these several layers is not specifically limited unless the effect of this invention is impaired.
  • the plurality of layers being different from each other means that at least one of the material and the thickness of each layer is different from each other.
  • “a plurality of layers may be the same or different from each other” means “all layers may be the same or all layers are different. Means that only some of the layers may be the same ”, and“ a plurality of layers are different from each other ”means that“ at least one of the constituent materials and thickness of each layer is different from each other ”. Means.
  • the thickness of the substrate can be appropriately selected according to the purpose, but is preferably 50 ⁇ m to 300 ⁇ m, and more preferably 60 ⁇ m to 100 ⁇ m.
  • the thickness of the substrate means the thickness of the entire substrate.
  • the thickness of the substrate composed of a plurality of layers means the total thickness of all the layers constituting the substrate. means.
  • the method of measuring thickness using a contact-type thickness meter in arbitrary five places, and calculating the average of a measured value etc. are mentioned, for example.
  • the substrate is subjected to uneven treatment by sandblasting, solvent treatment, embossing treatment, corona discharge treatment, electron beam irradiation.
  • the surface may be subjected to oxidation treatment such as treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment.
  • the base material may have a surface subjected to primer treatment.
  • the base material is a layer that prevents the base material from adhering to other sheets or the base material from adhering to the adsorption table when the antistatic coating layer and the dicing die bonding sheet are stored in an overlapping manner. It may have.
  • the pressure-sensitive adhesive layer satisfies the following conditions for thickness and elongation at break, and is preferably non-energy ray curable.
  • “non-energy ray curable” means a property that does not harden even when irradiated with energy rays. On the contrary, the property of curing by irradiating energy rays is referred to as “energy ray curability”.
  • “energy beam” means an electromagnetic wave or charged particle beam having energy quanta, and examples thereof include ultraviolet rays and electron beams.
  • Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion H lamp, or a xenon lamp as an ultraviolet ray source.
  • the electron beam can be emitted by an electron beam accelerator or the like.
  • the pressure-sensitive adhesive layer may be only one layer (that is, a single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same or different from each other. The combination is not particularly limited.
  • the thickness of the pressure-sensitive adhesive layer is 20 ⁇ m to 50 ⁇ m, preferably 20 ⁇ m to 45 ⁇ m, more preferably 20 ⁇ m to 40 ⁇ m, and particularly preferably 20 ⁇ m to 35 ⁇ m.
  • the thickness of the pressure-sensitive adhesive layer is equal to or more than the lower limit value, a higher pressure-sensitive adhesive force can be obtained with respect to the adherend (that is, the film adhesive).
  • the thickness of the pressure-sensitive adhesive layer is equal to or less than the above upper limit value, the semiconductor chip with a film adhesive can be more easily separated and picked up in the separating step described later, and dicing of a semiconductor wafer using a dicing blade At times, the generation amount of cutting waste can be further reduced.
  • the “thickness of the pressure-sensitive adhesive layer” means the thickness of the whole pressure-sensitive adhesive layer.
  • the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers is the total of all layers constituting the pressure-sensitive adhesive layer. Means the thickness.
  • the method of measuring thickness using a contact-type thickness meter in arbitrary five places, and calculating the average of a measured value etc. are mentioned, for example.
  • the breaking elongation of the pressure-sensitive adhesive layer is 5 to 50%, preferably 6 to 46%, more preferably 7 to 44%, and particularly preferably 8 to 42%.
  • the adhesive layer was stretched (that is, expanded) in the process until the semiconductor chip with the film adhesive was separated from the adhesive layer and picked up because the breaking elongation of the adhesive layer was not less than the lower limit. Occasionally, cracking at a location other than the intended purpose of the pressure-sensitive adhesive layer is highly suppressed, and the dicing die bonding sheet has more excellent characteristics.
  • the breaking elongation of the pressure-sensitive adhesive layer is not more than the above upper limit value, the amount of cutting waste generated during dicing of a semiconductor wafer using a dicing blade can be reduced, and a semiconductor chip with a film adhesive after dicing Can be easily pulled away from the adhesive layer and picked up.
  • the breaking elongation of the pressure-sensitive adhesive layer means “the breaking elongation of the pressure-sensitive adhesive layer before curing” when the pressure-sensitive adhesive layer is curable, unless otherwise specified. means. Moreover, the said breaking elongation means the breaking elongation of the adhesive layer of normal temperature, unless there is particular notice.
  • normal temperature means a temperature that is not cooled or heated, that is, a normal temperature, and includes, for example, a temperature of 15 to 25 ° C.
  • the elongation at break of the pressure-sensitive adhesive layer is such that a pressure-sensitive adhesive layer having a width of 10 mm and a thickness of 0.03 mm is fixed at two locations so that the distance between the fixed portions is 10 mm, and the tensile speed is 1000 mm / min.
  • the pressure-sensitive adhesive layer is obtained by pulling the pressure-sensitive adhesive layer between the fixed portions and measuring the elongation of the pressure-sensitive adhesive layer when the pressure-sensitive adhesive layer is broken.
  • “the elongation at break is X% (wherein X is a positive number)” means that the pressure-sensitive adhesive layer is pulled and the pressure-sensitive adhesive layer is pulled in the above measurement method.
  • the breaking elongation of the pressure-sensitive adhesive layer can be adjusted as appropriate by adjusting, for example, the type and amount of components contained in the pressure-sensitive adhesive layer.
  • the elongation at break of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the types of constituent units in the pressure-sensitive adhesive resin, which will be described later, and the content ratio thereof.
  • the elongation at break of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the content of the pressure-sensitive adhesive resin or the crosslinking agent in the pressure-sensitive adhesive layer.
  • these adjustment methods are only examples.
  • the adhesive force of the pressure-sensitive adhesive layer to the film adhesive is not particularly limited as long as the effects of the present invention are not impaired, but is preferably 35 to 300 mN / 25 mm, and preferably 45 to 100 mN / 25 mm. More preferred.
  • the adhesive force is 35 mN / 25 mm or more, the laminated structure of the adhesive layer and the film adhesive can be more stably maintained in the dicing die bonding sheet.
  • the adhesive force is 45 mN / 25 mm or more, so-called chip jumping, in which semiconductor chips are scattered by the force applied to the semiconductor chips during dicing of the semiconductor wafer, is further suppressed.
  • the adhesive strength is 300 mN / 25 mm or less
  • the adhesive strength of the adhesive layer with respect to the film adhesive is moderately reduced, and as will be described later, the adhesive layer is not cured by irradiation with energy rays or the like.
  • the semiconductor chip with a film adhesive after dicing can be easily separated from the pressure-sensitive adhesive layer and picked up. Further, at this time, the pick-up of the semiconductor chip with the film adhesive is suppressed while a part of the pressure-sensitive adhesive layer remains attached to the film adhesive.
  • the adhesive force is 100 mN / 25 mm or less
  • a semiconductor chip with a film adhesive when pushed up and pulled away from the adhesive layer and picked up, it can be easily picked up with a small push-up amount. So-called chipping, in which cracks and chips occur, is further suppressed.
  • adheresive strength of the adhesive layer to the film-like adhesive refers to “the film of the adhesive layer before curing” unless the adhesive layer is curable unless otherwise specified. It means “adhesive strength with respect to the adhesive”. Moreover, the said adhesive force means the adhesive force of a normal temperature adhesive layer unless there is particular notice.
  • the adhesive strength (mN / 25 mm) can be measured by the following method. That is, the dicing die bonding sheet having a width of 25 mm and an arbitrary length is produced. Next, the dicing die bonding sheet is stuck to the fixing base material with a film adhesive at normal temperature (for example, 23 ° C.).
  • the “fixing substrate” may be any material as long as it can firmly fix the film-like adhesive of the dicing die bonding sheet, and the shape thereof may be a sheet shape or other shapes.
  • the adhesive base material which has an adhesive surface as a fixed surface of a film adhesive in other words, a dicing die bonding sheet is mentioned, for example.
  • the laminate of the base material and the pressure-sensitive adhesive layer is formed from the film-like adhesive, and the surfaces of the film-like adhesive and the pressure-sensitive adhesive layer that are in contact with each other have an angle of 180 °.
  • so-called 180 ° peeling is performed, which is peeled off at a peeling speed of 300 mm / min.
  • the peeling force at this time is measured, and the measured value is defined as the adhesive strength (mN / 25 mm).
  • the length of the dicing die bonding sheet used for the measurement is not particularly limited as long as the peeling force can be stably measured.
  • the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer to the film adhesive can be adjusted as appropriate by adjusting, for example, the type and amount of components contained in the pressure-sensitive adhesive layer, the thickness of the pressure-sensitive adhesive layer, and the like.
  • the adhesive force can be easily adjusted by adjusting the types of constituent units in the adhesive resin described later, which is a component contained in the adhesive layer, and the content ratio thereof.
  • the said adhesive force can be easily adjusted by adjusting content of the adhesive resin and crosslinking agent of an adhesive layer.
  • these adjustment methods are only examples.
  • the elastic modulus of the pressure-sensitive adhesive layer is not particularly limited, but is preferably 30 to 140 MPa, more preferably 35 to 130 MPa, and particularly preferably 40 to 120 MPa.
  • the elastic modulus of the pressure-sensitive adhesive layer is equal to or higher than the lower limit value, the pressure-sensitive adhesive layer is not excessively soft, so that the followability to the film-like adhesive is suppressed, and the semiconductor chip with the film-like adhesive Tends to be picked up more easily when picking it up from the pressure-sensitive adhesive layer.
  • the elastic modulus of the pressure-sensitive adhesive layer is not more than the above upper limit value, the pressure-sensitive adhesive layer is not excessively hard, so when picking up the semiconductor chip with a film adhesive and pulling it away from the pressure-sensitive adhesive layer The pressure-sensitive adhesive layer is easily deformed and can be picked up more easily.
  • the “elastic modulus of the pressure-sensitive adhesive layer” refers to the case where the pressure-sensitive adhesive layer is curable unless otherwise specified, as in the case of the “breaking elongation of the pressure-sensitive adhesive layer” described above. Means “elastic modulus of the pressure-sensitive adhesive layer before curing”.
  • the elastic modulus means the elastic modulus of the pressure-sensitive adhesive layer at room temperature unless otherwise specified.
  • the elastic modulus of the pressure-sensitive adhesive layer can be measured simultaneously with the measurement of the elongation at break of the pressure-sensitive adhesive layer.
  • the elastic modulus of the pressure-sensitive adhesive layer can be appropriately adjusted by adjusting, for example, the type and amount of components contained in the pressure-sensitive adhesive layer.
  • the elastic modulus of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the types of constituent units in the pressure-sensitive adhesive resin, which will be described later, and the content ratio thereof.
  • the elasticity modulus of an adhesive layer can be easily adjusted by adjusting content of the adhesive resin of an adhesive layer or a crosslinking agent.
  • these adjustment methods are only examples.
  • the pressure-sensitive adhesive layer can be formed from a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive.
  • an adhesive layer can be formed in the target site
  • a more specific method for forming the pressure-sensitive adhesive layer will be described later in detail, along with methods for forming other layers.
  • the ratio of the content of components that do not vaporize at room temperature in the pressure-sensitive adhesive composition is usually the same as the ratio of the content of the components of the pressure-sensitive adhesive layer.
  • the adhesive composition may be applied by a known method, for example, an air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater. And a method using various coaters such as a Meyer bar coater and a kiss coater.
  • the drying conditions of the pressure-sensitive adhesive composition are not particularly limited, but when the pressure-sensitive adhesive composition contains a solvent described later, it is preferably heat-dried. In this case, for example, at 70 to 130 ° C. for 10 seconds to It is preferable to dry under conditions of 5 minutes.
  • the pressure-sensitive adhesive composition is preferably non-energy ray curable.
  • the non-energy ray curable pressure-sensitive adhesive composition include acrylic resins (that is, resins having a (meth) acryloyl group), urethane resins (that is, resins having a urethane bond), rubber resins (that is, A resin having a rubber structure), a silicone-based resin (that is, a resin having a siloxane bond), an epoxy-based resin (that is, a resin having an epoxy group), a polyvinyl ether, or a polycarbonate (hereinafter referred to as “adhesive resin”). (I) ").
  • the adhesive resin (i) is preferably an acrylic resin.
  • the acrylic resin in the adhesive resin (i) include an acrylic polymer having a structural unit derived from at least a (meth) acrylic acid alkyl ester.
  • the acrylic resin may have only one type of structural unit, two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • Examples of the (meth) acrylic acid alkyl ester include those in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms, and the alkyl group is linear or branched. Is preferred. More specifically, as (meth) acrylic acid alkyl ester, methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, (meth) acrylic acid n-butyl, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, (Meth) acrylic acid 2-ethylhexyl, (meth) acrylic acid isooctyl, (meth) acrylic acid n-
  • the acrylic polymer preferably has a structural unit derived from a (meth) acrylic acid alkyl ester in which the alkyl group has 4 or more carbon atoms.
  • the alkyl group preferably has 4 to 12 carbon atoms, more preferably 4 to 8 carbon atoms.
  • the (meth) acrylic acid alkyl ester having 4 or more carbon atoms in the alkyl group is preferably an acrylic acid alkyl ester.
  • the acrylic polymer preferably has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from an alkyl (meth) acrylate.
  • the functional group-containing monomer for example, the functional group reacts with a crosslinking agent to be described later to become a starting point of crosslinking, or the functional group reacts with an unsaturated group in the unsaturated group-containing compound, The thing which enables introduction
  • Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxy group, an amino group, and an epoxy group. That is, examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer.
  • hydroxyl group-containing monomer examples include hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, (meth) Hydroxyalkyl (meth) acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; non- (meth) acrylic non-methacrylates such as vinyl alcohol and allyl alcohol Examples thereof include saturated alcohols (that is, unsaturated alcohols that do not have a (meth) acryloyl skeleton).
  • carboxy group-containing monomer examples include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid (that is, monocarboxylic acids having an ethylenically unsaturated bond); fumaric acid, itaconic acid, maleic acid Ethylenically unsaturated dicarboxylic acids such as citraconic acid (ie, dicarboxylic acids having an ethylenically unsaturated bond); anhydrides of the ethylenically unsaturated dicarboxylic acids; carboxyalkyl (meth) acrylates such as 2-carboxyethyl methacrylate Examples include esters.
  • monocarboxylic acids such as (meth) acrylic acid and crotonic acid
  • fumaric acid, itaconic acid maleic acid
  • Ethylenically unsaturated dicarboxylic acids such as citraconic acid (ie, dicarboxylic acids having an ethylenically
  • the functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxy group-containing monomer, more preferably a hydroxyl group-containing monomer.
  • the functional group-containing monomer constituting the acrylic polymer may be only one type, or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the structural unit derived from the functional group-containing monomer is preferably 1 to 35% by mass, and more preferably 3 to 32% by mass with respect to the total amount of the structural unit. It is particularly preferably 5 to 30% by mass.
  • the acrylic polymer may further have a structural unit derived from another monomer.
  • the other monomer is not particularly limited as long as it is copolymerizable with (meth) acrylic acid alkyl ester or the like.
  • Examples of the other monomer include styrene, ⁇ -methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide and the like.
  • the other monomer constituting the acrylic polymer may be only one type, or two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the adhesive resin (i) other than the acrylic polymer also has a structural unit derived from a functional group-containing monomer, like the acrylic polymer.
  • the pressure-sensitive adhesive composition (i) contained in the pressure-sensitive adhesive composition may be only one type, or two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the ratio of the content of the pressure-sensitive adhesive resin (i) to the total content of components other than the solvent is 40 to 95% by mass. It is preferably 50 to 95% by mass, particularly preferably 60 to 90% by mass. Adhesiveness of an adhesive layer becomes more favorable because the said ratio of content of adhesive resin (i) is such a range.
  • the pressure-sensitive adhesive composition preferably contains a crosslinking agent (ii).
  • the crosslinking agent (ii) reacts with the functional group to crosslink the adhesive resins (i).
  • the cross-linking agent (ii) include tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, isocyanate-based cross-linking agents such as adducts of these diisocyanates (that is, cross-linking agents having an isocyanate group), ethylene glycol glycidyl ether, etc.
  • Epoxy-based crosslinking agent that is, crosslinking agent having glycidyl group
  • Aziridine-based crosslinking agent such as hexa [1- (2-methyl) -aziridinyl] triphosphatriazine (that is, crosslinking agent having aziridinyl group)
  • Aluminum chelate Metal chelate crosslinking agents that is, a crosslinking agent having a metal chelate structure
  • isocyanurate crosslinking agents that is, a crosslinking agent having an isocyanuric acid skeleton
  • the crosslinking agent (ii) is preferably an isocyanate-based crosslinking agent from the viewpoints of improving the cohesive strength of the pressure-sensitive adhesive and improving the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer, and being easily available.
  • the cross-linking agent (ii) contained in the pressure-sensitive adhesive composition may be only one type, or two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the content of the crosslinking agent (ii) in the pressure-sensitive adhesive composition is 5 to 5 parts per 100 parts by weight of the pressure-sensitive adhesive resin (i).
  • the amount is preferably 100 parts by mass, more preferably 10 to 80 parts by mass, and particularly preferably 15 to 60 parts by mass.
  • the content of the cross-linking agent (ii) is not less than the lower limit value, the effect obtained by using the cross-linking agent (ii) is more remarkably obtained.
  • adjustment of the adhesive force with respect to the film adhesive of an adhesive layer becomes easier because the said content of a crosslinking agent (ii) is below the said upper limit.
  • the pressure-sensitive adhesive composition may contain other additives that do not correspond to any of the above-described components within a range not impairing the effects of the present invention.
  • the other additives include an antistatic agent, an antioxidant, a softening agent (that is, a plasticizer), a filler (that is, a filler), a rust inhibitor, a coloring agent (that is, a pigment or a dye), an increase agent, and the like.
  • Known additives such as a sensitizer, a tackifier, a reaction retarder, and a crosslinking accelerator (that is, a catalyst) can be used.
  • reaction retarder is, for example, one that suppresses an undesired cross-linking reaction from proceeding in the adhesive composition during storage by the action of a catalyst mixed in the adhesive composition. is there.
  • reaction retarder include those that form a chelate complex by chelation against a catalyst, and more specifically, those having two or more carbonyl groups (—C ( ⁇ O) —) in one molecule. Can be mentioned.
  • 1 type may be sufficient as the other additive which an adhesive composition contains, and when it is 2 or more types, those combinations and ratios can be selected arbitrarily.
  • the content of other additives is not particularly limited, and may be appropriately selected according to the type.
  • the pressure-sensitive adhesive composition may contain a solvent.
  • the pressure-sensitive adhesive composition contains a solvent, thereby improving the suitability for application to the surface to be coated.
  • the solvent is preferably an organic solvent.
  • organic solvent include ketones such as methyl ethyl ketone and acetone; carboxylic acid esters such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; aliphatics such as cyclohexane and n-hexane. Hydrocarbons; aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol.
  • the solvent used in the production of the adhesive resin (i) may be used as it is in the adhesive composition without being removed from the adhesive resin (i). You may add separately the solvent of the same or different kind as what was used at the time of manufacture at the time of manufacture of an adhesive composition.
  • the solvent contained in the pressure-sensitive adhesive composition may be only one type, or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the solvent is not particularly limited, and may be adjusted as appropriate.
  • An adhesive composition is obtained by mix
  • the order of addition at the time of blending each component is not particularly limited, and two or more components may be added simultaneously.
  • a solvent it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or by diluting any compounding component other than the solvent in advance. You may use it by mixing a solvent with these compounding ingredients, without leaving.
  • the method of mixing each component at the time of compounding is not particularly limited, from a known method such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves What is necessary is just to select suitably.
  • the temperature and time during the addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30 ° C.
  • the film adhesive is not particularly limited as long as the effects of the present invention are not impaired, and known ones can be used as appropriate.
  • the film adhesive has curable properties, preferably has thermosetting properties, and preferably has pressure sensitive adhesive properties.
  • a film adhesive having both thermosetting and pressure-sensitive adhesive properties can be applied by lightly pressing on various adherends in an uncured state.
  • the film adhesive may be one that can be applied to various adherends by heating and softening.
  • the film adhesive finally becomes a cured product having high impact resistance by curing, and this cured product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.
  • the film adhesive may be composed of one layer (that is, a single layer), or may be composed of two or more layers.
  • these layers may be the same as or different from each other. That is, all the layers may be the same, all the layers may be different, or only some of the layers may be the same. And when a several layer differs from each other, the combination of these several layers is not specifically limited unless the effect of this invention is impaired.
  • the plurality of layers being different from each other means that at least one of the material and the thickness of each layer is different from each other.
  • the thickness of the film adhesive is not particularly limited, but is preferably 1 ⁇ m to 50 ⁇ m, and more preferably 3 ⁇ m to 40 ⁇ m.
  • the thickness of the film adhesive is equal to or more than the lower limit value, higher adhesive force can be obtained with respect to the adherend (ie, semiconductor chip).
  • the thickness of the film adhesive is equal to or less than the above upper limit value, the film adhesive can be more easily cut in the dividing step described later, and when the semiconductor wafer is diced using a dicing blade, cutting is performed. The amount of generated waste can be further reduced.
  • the “thickness of the film-like adhesive” means the thickness of the entire film-like adhesive.
  • the thickness of the film-like adhesive composed of a plurality of layers means all of the film-like adhesive. Means the total thickness of the layers.
  • the method of measuring thickness using a contact-type thickness meter in arbitrary five places, and calculating the average of a measured value etc. are mentioned, for example.
  • an adhesive containing a polymer component (a) and an epoxy thermosetting resin (b) can be mentioned.
  • an epoxy-type thermosetting resin (b) what consists of an epoxy resin (b1) and a thermosetting agent (b2) is mentioned, for example.
  • other components not corresponding to these may be added as necessary. May be contained.
  • Preferred examples of the other components include a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray curable resin (g), and photopolymerization initiation.
  • Agents (h), general-purpose additives (i), and the like may be a known one, and can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred examples include a plasticizer, an antistatic agent, an antioxidant, and a colorant (that is, , Dyes or pigments), gettering agents and the like.
  • a film adhesive can be formed from an adhesive composition containing its constituent materials.
  • a film adhesive can be formed in the target site
  • a more specific method for forming the film adhesive will be described later in detail, along with the method for forming other layers.
  • the content ratio of components that do not vaporize at normal temperature is usually the same as the content ratio of the components of the film adhesive.
  • Application of the adhesive composition can be performed by the same method as in the case of application of the above-mentioned pressure-sensitive adhesive composition.
  • the drying conditions of the adhesive composition are not particularly limited, but the adhesive composition is preferably heated and dried when it contains a solvent described later, and in this case, for example, at 70 to 130 ° C. for 10 seconds to It is preferable to dry under conditions of 5 minutes.
  • Preferred adhesive compositions include, for example, those containing the polymer component (a) described above, the epoxy thermosetting resin (b), and, if necessary, the other components and solvent.
  • Examples of the solvent contained in the adhesive composition include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutyl alcohol (ie, 2-methylpropan-1-ol), 1-butanol and the like.
  • Examples include alcohols; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (that is, compounds having an amide bond).
  • the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the adhesive composition can be mixed more uniformly.
  • the solvent contained in the adhesive composition for example, it may be used as it is in the adhesive composition without removing from the components what was used in the production of each component such as the polymer component (a), You may add separately the same or different kind of solvent used at the time of manufacture of each component, such as a polymer component (a), at the time of manufacture of an adhesive composition.
  • Each component such as the polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one type, or two or more types, and when there are two or more types, the combination and ratio thereof are as follows: Can be arbitrarily selected. Content of each component, such as a polymer component (a) in an adhesive composition and a film adhesive, is not specifically limited, What is necessary is just to select suitably according to the objective.
  • the adhesive composition is obtained by blending each component for constituting this, and can be produced by the same method as the above-described pressure-sensitive adhesive composition except that the blending components are different.
  • FIG. 1 is a cross-sectional view schematically showing one embodiment of a dicing die bonding sheet of the present invention.
  • the dicing die bonding sheet 101 shown here includes a pressure-sensitive adhesive layer 12 on a base material 11 and a film-like adhesive 13 on the pressure-sensitive adhesive layer 12.
  • the dicing die bonding sheet 101 further includes a release film 15 on the film adhesive 13.
  • a pressure-sensitive adhesive layer 12 is laminated on one surface of the base material 11 (hereinafter sometimes referred to as “first surface 11a”), and the base material 11 of the pressure-sensitive adhesive layer 12 is provided.
  • a film-like adhesive 13 is laminated on the entire surface opposite to the surface on which the film is present (hereinafter sometimes referred to as “first surface 12a”), and a pressure-sensitive adhesive layer 12 of the film-like adhesive 13 is provided.
  • the adhesive layer 14 for jigs is laminated on a part of the surface opposite to the side (hereinafter sometimes referred to as the “first surface 13a”), that is, in the vicinity of the peripheral portion, and the film adhesive 13 of the first surface 13a of the jig 13 and the surface of the jig adhesive layer 14 that is not in contact with the film adhesive 13 (that is, the first surface 14a). And the release film 15 is loaded on the side surface 14c).
  • tool is a surface on the opposite side to the film-form adhesive 13 of the adhesive layer 14 for jig
  • the boundary between the first surface 14a and the side surface 14c of the agent layer 14 cannot be clearly distinguished.
  • the pressure-sensitive adhesive layer 12 has a thickness of 20 ⁇ m to 50 ⁇ m and a breaking elongation of 5 to 50%.
  • the jig adhesive layer 14 may have a single-layer structure containing an adhesive component, or a plurality of layers in which layers containing an adhesive component are laminated on both surfaces of a sheet serving as a core material. It may be of a structure.
  • the first surface 13a of the film adhesive 13 is a surface on which a circuit of a semiconductor wafer (not shown) is formed (the present specification) with the release film 15 removed. Is attached to the opposite surface (may be abbreviated as “rear surface” in the present specification), and further to the adhesive layer 14 for jigs.
  • the first surface 14a is attached to a jig such as a ring frame and used.
  • FIG. 2 is a cross-sectional view schematically showing another embodiment of the dicing die bonding sheet of the present invention. 2 and the subsequent drawings, the same components as those shown in FIG. 1 are denoted by the same reference numerals as those in FIG. 1, and detailed description thereof is omitted.
  • the dicing die bonding sheet 102 shown here is the same as the dicing die bonding sheet 101 shown in FIG. 1 except that the jig adhesive layer 14 is not provided. That is, in the dicing die bonding sheet 102, the pressure-sensitive adhesive layer 12 is laminated on the first surface 11a of the substrate 11, and the film-like adhesive 13 is laminated on the entire surface of the first surface 12a of the pressure-sensitive adhesive layer 12. A release film 15 is laminated on the entire surface of the first surface 13 a of the adhesive 13.
  • the dicing die bonding sheet 102 shown in FIG. 2 is a state in which a part of the center side of the first surface 13a of the film adhesive 13 is a semiconductor wafer (not shown) in a state where the release film 15 is removed. Affixed to the back surface, and further, a region in the vicinity of the periphery of the first surface 13a of the film adhesive 13 is used by being affixed to a jig such as a ring frame.
  • FIG. 3 is a cross-sectional view schematically showing still another embodiment of the dicing die bonding sheet of the present invention.
  • the dicing die bonding sheet 103 shown here is the same as the dicing die bonding sheet 101 shown in FIG. 1 except that the shape of the film adhesive is different. That is, the dicing die bonding sheet 103 includes the pressure-sensitive adhesive layer 12 on the substrate 11 and the film-like adhesive 23 on the pressure-sensitive adhesive layer 12.
  • the dicing die bonding sheet 103 further includes a release film 15 on the film adhesive 23.
  • the pressure-sensitive adhesive layer 12 is laminated on the first surface 11 a of the base material 11, and a film-like adhesive 23 is formed on a part of the first surface 12 a of the pressure-sensitive adhesive layer 12, that is, in the central region.
  • a film-like adhesive 23 is formed on a part of the first surface 12 a of the pressure-sensitive adhesive layer 12, that is, in the central region.
  • the release film 15 is laminated on the side surface 23c). In some cases, the boundary between the first surface 23a and the side surface 23c of the film adhesive 23 cannot be clearly distinguished.
  • the film adhesive 23 has a surface area smaller than that of the pressure-sensitive adhesive layer 12 and has, for example, a circular shape.
  • the first surface 23a of the film adhesive 23 is attached to the back surface of the semiconductor wafer (not shown) in a state where the release film 15 is removed.
  • the surface on which the film adhesive 23 is not laminated is attached to a jig such as a ring frame and used.
  • the first surface 12a of the pressure-sensitive adhesive layer 12 is used for a jig as in the case shown in FIG. 1 on the surface where the film adhesive 23 is not laminated.
  • An adhesive layer may be laminated (not shown).
  • a dicing die bonding sheet 103 having such a jig adhesive layer is similar to the dicing die bonding sheet 101 shown in FIG. 1 in that the first surface of the jig adhesive layer is a jig such as a ring frame. Affixed to and used.
  • the dicing die bonding sheet of the present invention is not limited to the one shown in FIGS. 1 to 3, and a part of the configuration shown in FIGS. 1 to 3 is changed or deleted within a range not impairing the effects of the present invention. Or it may be added.
  • the dicing die bonding sheet can be manufactured by sequentially laminating the above-described layers so as to have a corresponding positional relationship.
  • the method for forming each layer is as described above.
  • an adhesive layer can be laminated
  • the above-mentioned adhesive composition is applied on the pressure-sensitive adhesive layer, and if necessary By drying, a film adhesive can be directly formed.
  • the composition is further applied onto the layer formed from the composition to newly form a layer. Can be formed.
  • the layer laminated after these two layers is formed in advance using the composition on another release film, and the side of the formed layer that is in contact with the release film is It is preferable to form a continuous two-layer laminated structure by bonding the opposite exposed surface to the exposed surfaces of the remaining layers already formed.
  • the composition is preferably applied to the release-treated surface of the release film. The release film may be removed as necessary after forming the laminated structure.
  • the pressure-sensitive adhesive composition is applied on the base material and dried as necessary, so that the pressure-sensitive adhesive layer is laminated on the base material, and the adhesive composition is separately applied on the release film. Then, by drying as necessary, a film-like adhesive is formed on the release film, and the exposed surface of this film-like adhesive is bonded to the exposed surface of the pressure-sensitive adhesive layer laminated on the substrate.
  • the dicing die bonding sheet is obtained by laminating a film adhesive on the pressure-sensitive adhesive layer.
  • the pressure-sensitive adhesive composition is applied on the release film.
  • the adhesive layer may be formed on the release film by drying as necessary, and the exposed surface of the adhesive layer may be laminated with one surface of the substrate.
  • the release film may be removed at an arbitrary timing after the target laminated structure is formed.
  • all layers other than the base material constituting the dicing die bonding sheet can be formed in advance on a release film and laminated on the surface of the target layer. What is necessary is just to select the layer which employ
  • the dicing die bonding sheet is usually stored in a state where a release film is bonded to the surface of the outermost layer (for example, a film adhesive) on the side where the film adhesive is provided. Therefore, on this release film (preferably its release-treated surface), a composition for forming a layer constituting the outermost layer, such as an adhesive composition, is applied and dried as necessary. A layer constituting the outermost layer is formed on the release film, and the remaining layers are laminated on the exposed surface opposite to the side in contact with the release film of this layer by any of the methods described above. A dicing die bonding sheet can also be obtained by keeping the peeled film without removing the release film.
  • a release film for example, a film adhesive
  • the semiconductor chip manufacturing method of the present invention is a semiconductor chip manufacturing method using the above-described dicing die bonding sheet of the present invention, wherein the pressure-sensitive adhesive layer of the film adhesive in the dicing die bonding sheet is A step of forming an intermediate structure in which a semiconductor wafer is provided on the surface opposite to the provided side (that is, the first surface) (hereinafter abbreviated as “intermediate structure forming step”). And using a dicing blade to divide the semiconductor wafer by forming a notch that reaches the adhesive layer from the surface of the semiconductor wafer and does not reach the base material in the intermediate structure. And a step of forming a semiconductor chip (hereinafter sometimes abbreviated as “dicing step”).
  • the dicing die bonding sheet of the present invention By using the dicing die bonding sheet of the present invention, in the dicing step, the amount of cutting waste generated during dicing of a semiconductor wafer using a dicing blade can be greatly reduced as compared with the conventional case.
  • the “cutting waste” has been described above.
  • FIG. 4 is a cross-sectional view for schematically explaining one embodiment of a method for producing a semiconductor chip of the present invention.
  • a manufacturing method when the dicing die bonding sheet shown in FIG. 1 is used will be described.
  • the thickness of the semiconductor wafer 9 ′ in the intermediate structure 201 is not particularly limited, but is preferably 10 ⁇ m to 100 ⁇ m, and more preferably 30 ⁇ m to 90 ⁇ m.
  • the adhesive layer 12 from the surface (that is, the circuit forming surface) 9a ′ of the semiconductor wafer 9 ′ is formed by dividing the semiconductor wafer 9 ′ by forming the notch 10 that does not reach the base material 11 and reaches the base material 11.
  • the thickness of the semiconductor chip 9 is the same as the thickness of the semiconductor wafer 9 ′ described above.
  • FIG. 5 is an enlarged cross-sectional view schematically showing the obtained semiconductor chip 9 together with the dicing die bonding sheet 101 in which the cuts 10 are formed.
  • the thickness T 1 of the pressure-sensitive adhesive layer 12 and the depth T 2 of the notch 10 from the first surface 12 a of the pressure-sensitive adhesive layer 12 satisfy the relationship of T 1 > T 2 .
  • a notch 10 is formed to fill.
  • the amount of cutting waste generated can be reduced, and the film adhesive It is possible to suppress the pickup failure of the attached semiconductor chip 9.
  • the amount of generated cutting waste can be reduced, for example, when the adhesive layer and the substrate are observed using the SEM after picking up the semiconductor chip 9 with the film adhesive. This can be confirmed by the fact that there is less cutting waste remaining on the surface.
  • the ratio (T 2 / T 1 ) of the depth T 2 of the notch 10 in the pressure-sensitive adhesive layer 12 to the thickness T 1 of the pressure-sensitive adhesive layer 12 is greater than 0 and less than 1, and is 0.1 to 0.9. It is preferably from 0.2 to 0.8, more preferably from 0.3 to 0.7.
  • the ratio is equal to or more than the lower limit value, the size of the protruding portion of the pressure-sensitive adhesive layer, that is, the amount of protrusion can be reduced at the portion where the cut 10 of the pressure-sensitive adhesive layer is formed.
  • the ratio is equal to or less than the upper limit value, the amount of cutting waste generated can be further reduced.
  • FIG. 6 is a cross-sectional view schematically showing an example of a state in which the notch 10 is formed in the intermediate structure 201 using a dicing blade in the dicing process.
  • the tip 8a in the radial direction of the dicing blade 8 is located in the adhesive layer 12 and does not reach the substrate 11.
  • the notch 10 shows a state in which a gap exists between the dicing blade 8 and the adhesive layer 12, but the adhesive layer 12 protrudes and remains on the dicing blade 8 side, as described above. In some cases, a protruding portion is present, and the gap is further narrowed or absent.
  • the width W of the dicing blade 8 is preferably 20 ⁇ m to 50 ⁇ m, and more preferably 30 ⁇ m to 35 ⁇ m.
  • the dicing blade 8 having such a width W the superior effect of the present invention can be obtained.
  • the distance between adjacent semiconductor chips that is, the kerf width
  • W the distance between adjacent semiconductor chips
  • the radial direction of the region in which the width W decreases toward the radially outer side of the dicing blade 8 is, toward the tip portion 8a.
  • the length L is preferably less than the thickness T 1 of the pressure-sensitive adhesive layer 12 (L ⁇ T 1 ), for example, preferably less than 50 ⁇ m, more preferably less than 45 ⁇ m, and less than 40 ⁇ m. Is more preferable, and it is especially preferable that it is less than 35 micrometers.
  • the lower limit of the length L is not particularly limited as long as it is larger than 0 ⁇ m, but it is usually preferably 10 ⁇ m, and more preferably 15 ⁇ m.
  • the angle ⁇ formed by the tip 8a of the dicing blade 8 with the surface on which the notch is to be formed is The one that is larger than 0 ° and smaller than 90 ° can be used.
  • ⁇ may be, for example, larger than 0 ° and 80 ° or less, but is preferably larger than 0 ° and 70 ° or less.
  • the dicing blade used in the dicing process is limited to such a dicing blade.
  • the tip angle ⁇ is 0 °, that is, in the vicinity of the tip portion 8a of the dicing blade 8, toward the radially outer side of the dicing blade 8 (ie, the tip A dicing blade in which there is no region in which the width W becomes narrower (toward the portion 8a) may be used in the dicing step.
  • T 3 (T 3 > 0) means the depth of the notch 10 from the first surface 11 a of the substrate 11.
  • subjected shows the bottom face in the notch site
  • the rotational speed of the dicing blade is preferably 10,000 to 60,000 rpm, and more preferably 20,000 to 50,000 rpm.
  • the moving speed of the dicing blade is preferably 20 to 80 mm / sec, and more preferably 40 to 60 mm / sec. Further, when the dicing blade is operated, it is preferable to flow the cutting water to the portion where dicing is performed, for example, in an amount of about 0.5 to 1.5 L / min.
  • the semiconductor device manufacturing method of the present invention is a dicing die bonding sheet after the step of forming the semiconductor chip (that is, the dicing step) is performed by the above-described method of manufacturing a semiconductor chip of the present invention, and then the cut is formed.
  • a step of applying a force from the substrate side and separating the semiconductor chip from the pressure-sensitive adhesive layer together with the film-like adhesive after cutting hereinafter, sometimes abbreviated as “detaching step”).
  • the amount of cutting waste generated in the dicing process can be greatly reduced by using the method for manufacturing a semiconductor chip of the present invention described above.
  • production of the pick-up defect of the semiconductor chip provided with the film adhesive is suppressed.
  • FIG. 8 is a cross-sectional view for schematically explaining one embodiment of a method for producing a semiconductor device of the present invention.
  • a manufacturing method when the dicing die bonding sheet shown in FIG. 1 is used will be described.
  • FIG. 8 only the configuration related to the dicing die bonding sheet and the semiconductor chip is shown in cross section.
  • a protrusion (that is, a pin) 70 is protruded from a push-up portion (not shown) in the semiconductor device manufacturing apparatus, and the tip of the protrusion 70 pushes up the dicing die bonding sheet 101 from the substrate 11 side.
  • An example in which force is applied in the protruding direction of the protrusion 70 to the intermediate structure 201 in which the notch 10 and the semiconductor chip 9 are formed is shown.
  • push-up conditions such as the protrusion amount (that is, the push-up amount) of the protrusion 70, the protrusion speed (ie, the push-up speed), and the hold time of the protrusion state (ie, the lifting waiting time) can be adjusted as appropriate.
  • the number of protrusions 70 is not particularly limited, and may be selected as appropriate.
  • the method of pushing up the dicing die bonding sheet 101 may be a known method, for example, by moving the slider along the dicing die bonding sheet 101 in addition to the method of pushing up the dicing die bonding sheet 101 as described above.
  • a method of pushing up the dicing die bonding sheet 101 may be mentioned.
  • the semiconductor chip 9 is peeled from the adhesive layer 12 together with the film adhesive 13 by pulling up the semiconductor chip 9 by the pulling portion 71 of the semiconductor device manufacturing apparatus.
  • the pulling direction of the semiconductor chip 9 is indicated by an arrow I.
  • the method of pulling up the semiconductor chip 9 may be a known method, and examples thereof include a method of sucking and pulling up the surface of the semiconductor chip 9 with a vacuum collet.
  • the separating step by using the semiconductor chip manufacturing method of the present invention using the dicing die bonding sheet 101 of the present invention, the occurrence of pickup failure of the semiconductor chip 9 with a film adhesive is suppressed.
  • a semiconductor chip separated (ie, picked up) together with a film adhesive that is, a semiconductor chip with a film adhesive
  • a semiconductor device can be manufactured by a method, that is, through a step of die-bonding the semiconductor chip to a circuit surface of a substrate with a film adhesive.
  • the semiconductor chip is die-bonded to the circuit surface of the substrate with a film adhesive, and if necessary, one or more semiconductor chips are further laminated on the semiconductor chip, and wire bonding is performed.
  • it is set as a semiconductor package.
  • a target semiconductor device may be manufactured using this semiconductor package.
  • the unit of time “msec” means “millisecond”.
  • Example 1 ⁇ Manufacture of dicing die bonding sheet> A film adhesive (manufactured by Lintec Corporation) is applied to the pressure-sensitive adhesive layer of a dicing sheet (base material thickness 80 ⁇ m, pressure-sensitive adhesive layer thickness 30 ⁇ m) comprising a non-energy ray-curable pressure-sensitive adhesive layer on a base material. “ADWILL LE61-25 *” (thickness 25 ⁇ m) was attached at room temperature. As described above, a dicing die bonding sheet comprising a pressure-sensitive adhesive layer on the substrate and a film adhesive on the pressure-sensitive adhesive layer was obtained.
  • the pressure-sensitive adhesive layer of the dicing sheet used here has, as an adhesive resin, 2-ethylhexyl acrylate (hereinafter abbreviated as “2EHA”) (60 parts by mass), methyl methacrylate (hereinafter referred to as “MMA”).
  • 2EHA 2-ethylhexyl acrylate
  • MMA methyl methacrylate
  • Table 1 shows the elongation at break and elastic modulus of this pressure-sensitive adhesive layer measured by the following method, and the pressure-sensitive adhesive force to the film adhesive.
  • the pressure-sensitive adhesive layer was cut out to have a length of 30 mm, a width of 10 mm, and a thickness of 0.03 mm to obtain a test piece. Subsequently, this test piece was installed in a measuring apparatus (“Autograph” manufactured by Shimadzu Corporation). At this time, from the both ends in the length direction of the test piece to a portion having a length of 10 mm was sandwiched with a chuck so that the length of the measurement target portion of the test piece was 10 mm. Next, the test piece was pulled in the length direction under an environment of a temperature of 23 ° C. and a relative humidity of 50% at a tensile speed of 1000 mm / min, and the elongation at break and elastic modulus of the pressure-sensitive adhesive layer were measured.
  • a dicing die bonding sheet was cut out to have a width of 25 mm and a length of 200 mm to obtain a test piece. Subsequently, this test piece was affixed on the adhesive surface of the adhesive sheet with the film adhesive under normal temperature (23 degreeC). Next, under normal temperature (23 ° C.), the laminate of the base material and the pressure-sensitive adhesive layer is formed from the film-like adhesive so that the surfaces of the film-like adhesive and the pressure-sensitive adhesive layer that are in contact with each other form an angle of 180 °.
  • the film was peeled off at a peeling speed of 300 mm / min to perform 180 ° peeling, and the peeling force at this time was measured to determine the pressure-sensitive adhesive force (mN / 25 mm) of the pressure-sensitive adhesive layer to the film adhesive.
  • the cut is formed so as not to reach the base material in the intermediate structure, and the ratio of the cut depth T 2 in the pressure-sensitive adhesive layer to the thickness T 1 of the pressure-sensitive adhesive layer (T 2 / T 1 ) was set to 0.67.
  • a dicing blade having a width W of 30 ⁇ m to 35 ⁇ m, an angle ⁇ of the tip portion of 30 °, and a radial length L of 9 ⁇ m to 10 ⁇ m is used.
  • the rotational speed of the dicing blade is 40000 rpm. The speed was 50 mm / sec.
  • dicing was performed while flowing cutting water at a rate of 1 L / min to the location where dicing was performed. As described above, when the surface of the silicon wafer was looked down from above, dicing was performed at intervals of 8 mm in two orthogonal directions, that is, so that the silicon chip was 8 mm ⁇ 8 mm in size.
  • the push-up amount when the intermediate structure is pushed up and the semiconductor chip with the film-like adhesive is pulled off continuously by changing the push-up amount and can be carried out 30 times without any abnormality.
  • SEM scanning electron microscope
  • VE-9800 manufactured by KEYENCE Inc.
  • Example 2 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Table 1 shows the elongation at break and elastic modulus of the pressure-sensitive adhesive layer, and the adhesive strength against the film adhesive.
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 700,000, glass transition temperature -63 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (85 parts by mass) and HEA (15 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (28.28 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Example 3 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Table 1 shows the elongation at break and elastic modulus of the pressure-sensitive adhesive layer, and the adhesive strength against the film adhesive.
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 850000, glass transition temperature -61 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink) (37.70 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Example 4 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Adhesive layer An acrylic polymer obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass), and HEA (10 parts by mass) as an adhesive resin (weight average molecular weight 450,000, glass transition temperature -31 ° C.) ( 100 parts by mass) and a tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co.) (56.55 parts by mass) as a crosslinking agent.
  • Example 5 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Table 1 shows the elongation at break and elastic modulus of the pressure-sensitive adhesive layer, and the adhesive strength against the film adhesive.
  • Adhesive layer An acrylic resin obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass), and 4-hydroxybutyl acrylate (hereinafter abbreviated as “4HBA”) (10 parts by mass) as an adhesive resin.
  • the cut is formed in the intermediate structure over the entire thickness direction of the pressure-sensitive adhesive layer, and the ratio of the cut depth T 2 in the pressure-sensitive adhesive layer to the thickness T 1 of the pressure-sensitive adhesive layer ( T 2 / T 1 ) was set to 1, and further, a notch was formed in the base material, so that the notch depth T 3 in the base material was 20 ⁇ m.
  • the dicing blade and the rotational speed and moving speed of the dicing blade were the same as those in Example 1. As described above, when the surface of the silicon wafer was looked down from above, dicing was performed at intervals of 8 mm in two orthogonal directions, that is, so that the silicon chip was 8 mm ⁇ 8 mm in size.
  • Example 2 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Adhesive layer As an adhesive resin, an acrylic polymer obtained by copolymerizing 2EHA (70 parts by mass), MMA (20 parts by mass), and HEA (10 parts by mass) (weight average molecular weight 510000, glass transition temperature -44 ° C.) ( 100 parts by mass) and a tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (18.85 parts by mass) as a crosslinking agent.
  • 2EHA 70 parts by mass
  • MMA 20 parts by mass
  • HEA weight average molecular weight 510000, glass transition temperature -44 ° C.
  • BHS8515 trimethylolpropane
  • Example 3 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 700,000, glass transition temperature -66 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (90 parts by mass) and HEA (10 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (18.85 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Example 4 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 700,000, glass transition temperature -63 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (85 parts by mass) and HEA (15 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (28.28 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Example 5 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Table 2 shows the elongation at break of the pressure-sensitive adhesive layer and the pressure-sensitive adhesive force to the film adhesive. The elastic modulus of the pressure-sensitive adhesive layer could not be measured.
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 850000, glass transition temperature -61 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (113.10 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Adhesive layer As an adhesive resin, acrylic polymer (weight average molecular weight 850000, glass transition temperature -61 ° C.) (100 parts by mass) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass), and crosslinking A pressure-sensitive adhesive layer containing tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink Co., Ltd.) (188.50 parts by mass) as an agent.
  • BHS8515 trimethylolpropane
  • Example 7 A dicing die bonding sheet and a semiconductor chip are manufactured in the same manner as in Example 1 except that a dicing sheet provided with the following (thickness 30 ⁇ m) is used as the pressure-sensitive adhesive layer. The value was calculated
  • Adhesive layer An acrylic polymer obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass), and HEA (10 parts by mass) as an adhesive resin (weight average molecular weight 450,000, glass transition temperature -31 ° C.) ( 100 parts by mass) and a tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink) (94.25 parts by mass) as a crosslinking agent.
  • Example 8 A dicing die bonding sheet and a semiconductor chip were produced in the same manner as in Example 1 except that a dicing sheet having the following (thickness 30 ⁇ m) as an adhesive layer was used, and cutting chips on the dicing line were produced. The amount of was confirmed. The results are shown in Table 3. In addition, Table 3 shows the elongation at break of the pressure-sensitive adhesive layer and the adhesive strength against the film adhesive. In this comparative example, the semiconductor chip with a film adhesive could not be separated from the pressure-sensitive adhesive layer (that is, picked up), and the minimum value of the push-up amount could not be obtained. Further, the elastic modulus of the pressure-sensitive adhesive layer could not be measured.
  • Adhesive layer As an adhesive resin, an acrylic polymer (weight average molecular weight 720000, glass transition temperature) obtained by copolymerizing lauryl acrylate (hereinafter abbreviated as “LA”) (80 parts by mass) and HEA (20 parts by mass). -27 ° C.) (100 parts by mass) and a tolylene diisocyanate trimer adduct of trimethylolpropane (“BHS8515” manufactured by Toyo Ink) (137.70 parts by mass) as a crosslinking agent .
  • LA lauryl acrylate
  • HEA HEA
  • BHS8515 trimethylolpropane
  • a notch that reached the pressure-sensitive adhesive layer from the surface of the semiconductor wafer and did not reach the base material was formed.
  • the minimum value of the push-up amount was 200 ⁇ m or less, and the pick-up suitability of the semiconductor chip with a film adhesive was good.
  • Examples 2 to 4 in which the adhesive strength of the adhesive layer to the film adhesive was smaller, the minimum value of the push-up amount was smaller, and the pick-up suitability of the semiconductor chip with the film adhesive was extremely excellent.
  • the amount of cutting waste on the dicing line was small, and particularly in Examples 2 to 4, it was extremely small.
  • the amount of cutting waste on the dicing line correlated with the pickup suitability of the semiconductor chip with the film adhesive.
  • Comparative Example 1 As a result of forming a cut reaching the base material from the surface of the semiconductor wafer in the intermediate structure in the dicing process, the pressure-sensitive adhesive layer is the same as in Example 1.
  • the minimum value of the push-up amount was 300 ⁇ m, and the pick-up suitability of the semiconductor chip with a film adhesive was inferior.
  • Comparative Examples 2 to 3 the breaking elongation of the pressure-sensitive adhesive layer was too large, and accordingly, the minimum value of the push-up amount was large, and the pick-up suitability of the semiconductor chip with film adhesive was inferior.
  • Comparative Examples 5 and 7 the elongation at break of the pressure-sensitive adhesive layer was too small, cracks were observed at places other than the intended purpose of the pressure-sensitive adhesive layer, and the properties of the pressure-sensitive adhesive layer were inferior.
  • the dicing die bonding sheet of this comparative example was not suitable for practical use.
  • Comparative Example 6 since the content of the crosslinking agent in the pressure-sensitive adhesive layer was too large and there was a problem with the composition of the pressure-sensitive adhesive layer, as described above, a film adhesive could not be applied to the pressure-sensitive adhesive layer. The dicing die bonding sheet could not be manufactured.
  • Comparative Examples 1 to 4 and 8 there is a lot of cutting scraps on the dicing line.
  • the minimum value of the push-up amount is 250 ⁇ m or more.
  • Comparative Example 8 measurement was impossible.
  • Comparative Examples 5 and 7 there was little cutting waste on the dicing line, and the minimum value of the push-up amount was as small as 75 ⁇ m.
  • the amount of cutting waste on the dicing line correlated with the pickup suitability of the semiconductor chip with a film adhesive.
  • Comparative Examples 1 to 5 and 7 as a result of observing the semiconductor chip with a film adhesive that failed to be picked up and the pressure-sensitive adhesive layer and the substrate at the corresponding position using the SEM, cutting on the dicing line was found. It was confirmed that the scrap adhered to the film adhesive, and the cutting scrap remaining on the dicing line was one cause of the pickup failure. Further, in Comparative Examples 1, 3, and 8, there was an extremely large amount of cutting waste remaining on the dicing line. In Comparative Examples 5 and 7, chip skipping was observed, but in Comparative Examples 1 to 4 and 8, chip skipping was not observed.
  • the present invention can be used for manufacturing semiconductor devices.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
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  • Dicing (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2017/007103 2016-03-10 2017-02-24 ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法 WO2017154619A1 (ja)

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CN201780015580.3A CN108713241B (zh) 2016-03-10 2017-02-24 切割芯片接合片、半导体芯片的制造方法及半导体装置的制造方法
SG11201807714QA SG11201807714QA (en) 2016-03-10 2017-02-24 Dicing die bonding sheet, method for producing semiconductor chip and method for manufacturing semiconductor device
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JP2019075449A (ja) * 2017-10-16 2019-05-16 リンテック株式会社 ダイシングダイボンディングシート及び半導体チップの製造方法
WO2021193916A1 (ja) * 2020-03-27 2021-09-30 リンテック株式会社 半導体装置製造用シートの製造方法
KR20240001144A (ko) 2021-04-28 2024-01-03 후지모리 고교 가부시키가이샤 테이프

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EP3760423A1 (en) * 2019-07-02 2021-01-06 Essilor International Method for making optical lenses using 3d printed functional wafers

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KR20240001144A (ko) 2021-04-28 2024-01-03 후지모리 고교 가부시키가이샤 테이프

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SG11201807714QA (en) 2018-10-30
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