WO2017135165A1 - 放射線検出装置の製造方法 - Google Patents

放射線検出装置の製造方法 Download PDF

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Publication number
WO2017135165A1
WO2017135165A1 PCT/JP2017/002978 JP2017002978W WO2017135165A1 WO 2017135165 A1 WO2017135165 A1 WO 2017135165A1 JP 2017002978 W JP2017002978 W JP 2017002978W WO 2017135165 A1 WO2017135165 A1 WO 2017135165A1
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WO
WIPO (PCT)
Prior art keywords
scintillator
radiation detection
manufacturing
detection apparatus
light
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Application number
PCT/JP2017/002978
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English (en)
French (fr)
Japanese (ja)
Inventor
田坂　知樹
裕也 藤森
水村　通伸
梶山　康一
Original Assignee
株式会社ブイ・テクノロジー
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Publication date
Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Publication of WO2017135165A1 publication Critical patent/WO2017135165A1/ja

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors

Definitions

  • the present invention relates to a method for manufacturing a radiation detection apparatus that detects radiation and outputs an electrical signal corresponding to the intensity distribution of the radiation.
  • the scintillator panel includes a substrate, a partition, and a scintillator layer filled in a cell defined by the partition.
  • the scintillator layer has a function of converting incident X-rays into light (visible light).
  • the screen printing method is a method in which a paste-like partition wall material is repeatedly printed on a sensor substrate by screen printing, and then the partition walls are formed by firing.
  • the sand blasting method after a partition wall material layer is formed on the entire surface of the sensor substrate, the partition formation region is covered with a resist, and an opening is formed in the partition layer by sand blasting using the resist as a mask, followed by firing. Is the method.
  • the etching method is a method in which a partition wall material is formed on the entire surface of the sensor substrate, and then the partition wall formation region is covered with a resist, and the opening is removed by etching using the resist as a mask.
  • the imprint method is a method of forming a partition wall material on the entire surface of a sensor substrate, pressing a mold to form a partition wall and an opening, and then baking.
  • the photolithographic method is a method in which a photosensitive paste is applied, exposed and developed, and patterned to leave a photosensitive paste material in the partition wall portion, followed by baking. As described above, in order to manufacture a radiation detection apparatus, first, a partition wall is patterned on a sensor substrate.
  • the radiation detection apparatus is manufactured using the above-described partition wall manufacturing method
  • the thickness (line width) of the partition wall is very small, there is a problem that the yield is poor.
  • the partition wall thickness is small, the partition wall material needs to have many characteristics such that the partition wall can withstand the above-described pattern forming conditions, that is, viscosity, heat resistance, processability, and thermosetting. For this reason, the freedom degree of selection of a partition material was low.
  • a scintillator portion is formed after the partition wall is formed, and then a reflective film covering the scintillator portion is formed. That is, after forming the partition, it is necessary to form a reflective film so as to be joined to the partition.
  • the reason why the reflective film is bonded to the partition wall is that light emitted from the scintillator portion is dissipated from between the partition wall and the reflective film.
  • the partition wall manufacturing method described above there may be a case where the bonding surface between the partition wall and the reflective film cannot be formed with high and high continuity. In this case, there is a problem that light converted from radiation in the scintillator section leaks between the partition wall and the reflective film.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing a radiation detection apparatus that can easily manufacture a radiation detection apparatus with high light emission utilization efficiency with high yield. .
  • the embodiment of the present invention corresponds to a sensor substrate on which a plurality of photosensor units each constituting a pixel are arranged and one photosensor unit.
  • a method of manufacturing a radiation detection device comprising a plurality of scintillator portions and a partition wall formed between the scintillator portions, wherein a scintillator portion forming mask is disposed on the sensor substrate.
  • a light-shielding material film that forms a light-shielding material film so as to cover the plurality of scintillator portions on the sensor substrate after the mask removing step. Characterized in that it comprises charge and film forming step.
  • the scintillator portion forming step may form the scintillator portion using a vacuum film forming method.
  • the scintillator portion forming mask is preferably formed of a metal or an inorganic oxide material.
  • the light-shielding material film is formed of metal.
  • the light shielding material film may be an organic material.
  • the scintillator portion forming mask is formed using Invar alloy.
  • the vacuum film forming method can use a vapor deposition method.
  • a radiation detection apparatus with high light emission utilization efficiency can be easily manufactured, and the manufacturing yield can be improved.
  • FIG. 1 is a cross-sectional view showing a sensor substrate used in the method for manufacturing a radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a process cross-sectional view illustrating the manufacturing method of the radiation detecting apparatus according to the first embodiment of the present invention and showing a state where a scintillator forming mask is arranged on the sensor substrate.
  • FIG. 3 is a process cross-sectional view illustrating a scintillator forming process in the method for manufacturing the radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 4 is a process cross-sectional view illustrating a mask removal process in the method for manufacturing the radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 5 is a process cross-sectional view illustrating a state where the scintillator forming mask is removed in the method for manufacturing the radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 6 is a process cross-sectional view illustrating a light shielding material film forming process in the method for manufacturing the radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 7 is a plan view of a scintillator forming mask used in the method for manufacturing the radiation detection apparatus according to the first embodiment of the present invention.
  • FIG. 8 is principal part sectional drawing which shows the radiation detection apparatus manufactured with the manufacturing method of the radiation detection apparatus which concerns on the 2nd Embodiment of this invention.
  • FIG. 9 is a cross-sectional view of a principal part showing a radiation detection apparatus manufactured by the method for manufacturing a radiation detection apparatus according to the third embodiment of the present invention.
  • the manufacturing method of the radiation detection apparatus according to the present embodiment can be applied to a radiographic imaging apparatus as a radiation detection apparatus and a manufacturing method of X-ray CT (Computed Tomography).
  • the sensor substrate 1 is formed on, for example, a glass substrate 2, a TFT (thin film transistor) circuit portion 3 formed on the surface of the glass substrate 2, and the TFT circuit portion 3.
  • a photosensor array 4 is formed on, for example, a glass substrate 2, a TFT (thin film transistor) circuit portion 3 formed on the surface of the glass substrate 2, and the TFT circuit portion 3.
  • the TFT circuit unit 3 includes a TFT (not shown) as a switching element for each pixel region. These TFTs are arranged in a matrix on the surface of the glass substrate 2.
  • the TFT circuit section 3 includes a charge storage capacitor, a gate line, a data line, and the like (not shown).
  • the optical sensor array 4 is configured by arranging a plurality of optical sensor units 4A. These optical sensor units 4A are composed of photodiodes. Each photosensor unit 4A is arranged corresponding to a TFT (not shown) provided for each pixel, and is connected to each TFT.
  • the scintillator portion forming mask 5 has a lattice shape. That is, the scintillator portion forming mask 5 has a frame portion 5A and a rectangular opening 5B. Each opening 5B in the scintillator portion forming mask 5 is set so as to correspond to the optical sensor portion 4A formed on the sensor substrate 1.
  • the scintillator portion forming mask 5 is preferably formed of a metal or an inorganic oxide material.
  • the scintillator portion forming mask 5 is formed of an invar alloy (invar Fe—Ni alloy) having a small linear expansion coefficient.
  • a scintillator forming mask 5 is directly placed on the photosensor array 4 of the sensor substrate 1.
  • alignment of the sensor substrate 1 and the scintillator part forming mask 5 is performed so that each opening 5B of the scintillator part forming mask 5 is arranged corresponding to the optical sensor part 4A.
  • a scintillator part forming step is performed.
  • an evaporation method is used as a vacuum film formation method.
  • the scintillator material a material selected from CsI: Tl, Gd2O2S: Tb, LaBr3: Ce, and the like is used.
  • vapor deposition is performed to form the scintillator portion 6.
  • the scintillator sections 6 are formed on the respective optical sensor sections 4A so as to correspond one by one.
  • the scintillator portion forming mask 5 is formed of an Invar alloy, the deformation of the scintillator portion forming mask 5 due to the thermal expansion of the scintillator portion forming mask 5 is suppressed at the time of vapor deposition. The decrease can be suppressed.
  • the mask removal process is performed by moving the scintillator portion forming mask 5 upward as indicated by the arrow F.
  • a gap 7 is formed between the scintillator portions 6 as shown in FIG.
  • the scintillator portions 6 are formed in an independent state with a gap 7 therebetween.
  • a metal as a light-shielding material film is deposited to form a metal film 8 on the entire surface of the sensor substrate 1 on which the scintillator portion 6 is formed (light-shielding material film).
  • Forming step As the material of the metal film 8, Al, Ag, Ni, Au, or the like can be used.
  • a portion of the metal film 8 filled in the gap 7 between the scintillator portions 6 becomes a partition wall 8A.
  • the part formed so that the upper surface of the scintillator part 6 among the metal films 8 may be covered becomes the reflecting film 8B. In this way, the manufacture of the radiation detection apparatus 10A configured as shown in FIG. 6 is completed.
  • the scintillator section forming mask 5 is used when the scintillator section 6 is manufactured, the dimensional accuracy of the scintillator section 6 can be increased. Therefore, the dimensional accuracy of the gap 7 between the scintillator portions 6 is also increased. Thus, since the dimensional accuracy of the gap 7 is increased, the partition wall 8A can be easily and reliably manufactured, and the yield can be improved.
  • the scintillator portion forming mask 5 is made of an invar alloy having a small linear expansion coefficient, and thus has the effect of further improving the dimensional accuracy of the scintillator portion 6.
  • the light shielding function of the partition wall 8A makes it difficult for the optical sensor section 4A to detect light from the scintillator sections 6 of adjacent pixels. Therefore, crosstalk can be prevented.
  • the partition wall 8A and the reflective film 8B are made of metal, and thus the light generated in the scintillator section 6 is transmitted to the optical sensor section 4A. There is a guiding effect.
  • the radiation detection apparatus 10A manufactured in the present embodiment crosstalk can be prevented and the light is guided to the optical sensor unit 4A, so that the contrast, resolution, detection resolution, etc. of the captured image are obtained.
  • the deterioration of the characteristics can be prevented.
  • the radiation detection apparatus 10A manufactured by the manufacturing method of the radiation detection apparatus of this Embodiment it becomes possible to reduce the irradiation amount of the X-ray at the time of imaging
  • the radiation detection apparatus 10A since the reflection film 8B is formed simultaneously with the partition wall 8A, the radiation detection apparatus 10A having higher light emission utilization efficiency than the radiation detection apparatus including the simple partition wall 8A is easily manufactured. it can.
  • FIG. 8 shows a radiation detection apparatus 10B produced by the method for manufacturing a radiation detection apparatus according to the second embodiment of the present invention.
  • This radiation detection apparatus 10B is an example in which the scintillator section 9 made of a large number of columnar crystals is formed in the scintillator section forming step in the first embodiment. Other steps in the present embodiment are the same as those in the first embodiment.
  • light can be efficiently guided toward the optical sensor unit 4A in the scintillator unit 9 by the light guide function in the scintillator unit 9 formed of columnar crystals.
  • FIG. 9 shows a radiation detection apparatus 10C produced by the method for manufacturing a radiation detection apparatus according to the third embodiment of the present invention.
  • the present embodiment is an example in which the organic material film 11 is formed on the entire surface after the scintillator section 6 is formed in the light shielding material film forming step in the first embodiment.
  • the portion filled between the scintillator portions 6 is a partition wall 11A, and the portion formed on the scintillator portion 6 is a sealing film 11B that prevents the dissipation of light.
  • membrane 11 can apply various formation methods, such as a coating method, a dipping method, and a vapor deposition method.
  • the manufacturing method of the radiation detection apparatus it is possible to easily form a light-shielding material film by using an organic material.
  • the other process in this Embodiment is the same as the process of the said 1st Embodiment.
  • a photodiode is used as the photosensor unit 4A, but various photodetecting elements such as a CCD sensor and a CMOS sensor may be applied.
  • the vapor deposition method is used as the vacuum film formation method in the scintillator section forming step, but other film formation techniques can also be used.
  • the scintillator portion forming mask 5 is made of an invar alloy, but is made of a metal or alloy such as Ni or Ni—Co alloy, or an inorganic oxide material. You may use what was formed.
  • the radiation detection apparatus is arranged so as to correspond to the sensor substrate 1 on which a plurality of photosensor units each constituting a pixel are arranged, and to each photosensor unit 4A.
  • a plurality of scintillator portions 6, a partition wall 8A formed between the scintillator portions 6, and a reflective film 8B formed by the same method at the same time as the partition wall 8A are provided.
  • the partition wall 8A and the reflective film 8B constitute a metal film 8.
  • the partition wall 11A and the sealing film 11B can be simultaneously formed by the same method.
  • the radiation detection device manufactured by such a method of manufacturing a radiation detection device is easy to manufacture, and the partition wall and the reflection film are integrally formed. Therefore, in the radiation detector manufactured in this way, the partition and the reflective film have a dense continuity, and it is possible to reliably prevent light emitted from the scintillator portion from being scattered between the partition and the reflective film.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
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  • High Energy & Nuclear Physics (AREA)
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  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
PCT/JP2017/002978 2016-02-02 2017-01-27 放射線検出装置の製造方法 WO2017135165A1 (ja)

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JP2016017740A JP2017138140A (ja) 2016-02-02 2016-02-02 放射線検出装置の製造方法
JP2016-017740 2016-02-02

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US20210249666A1 (en) 2017-07-14 2021-08-12 Sumitomo Electric Industries, Ltd. Metal porous body, solid oxide fuel cell, and method for producing metal porous body

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202373A (ja) * 2000-12-28 2002-07-19 Toshiba Corp 平面検出器及びその製造方法
JP2002333480A (ja) * 2001-05-07 2002-11-22 Hamamatsu Photonics Kk シンチレータパネルおよびそれを用いた放射線検出器
JP2012185123A (ja) * 2011-03-08 2012-09-27 Sony Corp 放射線撮像装置および放射線撮像装置の製造方法
JP2014145783A (ja) * 2014-04-11 2014-08-14 Toshiba Corp シンチレータ部材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202373A (ja) * 2000-12-28 2002-07-19 Toshiba Corp 平面検出器及びその製造方法
JP2002333480A (ja) * 2001-05-07 2002-11-22 Hamamatsu Photonics Kk シンチレータパネルおよびそれを用いた放射線検出器
JP2012185123A (ja) * 2011-03-08 2012-09-27 Sony Corp 放射線撮像装置および放射線撮像装置の製造方法
JP2014145783A (ja) * 2014-04-11 2014-08-14 Toshiba Corp シンチレータ部材

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