WO2017133067A1 - 一种涂覆基质具有高导热能力的厚膜元件 - Google Patents

一种涂覆基质具有高导热能力的厚膜元件 Download PDF

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Publication number
WO2017133067A1
WO2017133067A1 PCT/CN2016/077439 CN2016077439W WO2017133067A1 WO 2017133067 A1 WO2017133067 A1 WO 2017133067A1 CN 2016077439 W CN2016077439 W CN 2016077439W WO 2017133067 A1 WO2017133067 A1 WO 2017133067A1
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Prior art keywords
thick film
carrier
film coating
cover layer
coating
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PCT/CN2016/077439
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English (en)
French (fr)
Inventor
黄伟聪
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广东天物新材料科技有限公司
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Application filed by 广东天物新材料科技有限公司 filed Critical 广东天物新材料科技有限公司
Priority to DK16888891.5T priority Critical patent/DK3253176T3/da
Priority to PL16888891T priority patent/PL3253176T3/pl
Priority to US15/529,086 priority patent/US11419186B2/en
Priority to JP2017525114A priority patent/JP6315643B1/ja
Priority to EA201790671A priority patent/EA037599B1/ru
Priority to EP16888891.5A priority patent/EP3253176B1/en
Priority to ES16888891T priority patent/ES2767804T3/es
Publication of WO2017133067A1 publication Critical patent/WO2017133067A1/zh

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/02Details
    • H05B3/06Heater elements structurally combined with coupling elements or holders
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/16Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013Heaters using resistive films or coatings

Definitions

  • the invention relates to the field of thick films, in particular to a thick film element having a high thermal conductivity of a coated substrate.
  • the thick film heating element refers to a heat generating element in which a heat generating material is formed into a thick film on a substrate and energized and heated.
  • the traditional heating method includes electric heating tube heating and PTC heating.
  • the electric heating tube heating element is a metal tube as a jacket, and a nickel-chromium or iron-chromium alloy is spirally distributed in the metal tube as a heating wire, and the gap space is filled with good heat conduction and The magnesia sand with insulating properties is sealed with silicone at both ends; the PTC heating element uses PTC ceramic as the heating material.
  • the current electric heating tube heating and PTC heating methods are indirect heating, exhibiting low thermal efficiency, and the shape is large and cumbersome.
  • the two heaters are repeatedly heated, they are not resistant to dirt and are not easy to clean.
  • the PTC heating element contains harmful substances such as lead, which is easy to oxidize, the power is attenuated, and the service life is short.
  • CN201310403454.9 discloses a thick film circuit resistance paste based on ceramic tile and a preparation method thereof, and aims to provide a resistance slurry which can be matched with a ceramic tile, which provides a possibility for preparation of a novel floor heating element.
  • Its raw materials include solid phase components (ceramic glass powder, silver powder) and organic binder.
  • the weight percentage of each raw material is: 70-85% of glass-ceramic powder, 15-30% of organic binder, above weight The sum of the percentages is 100%, which is mainly used as a resistive paste which directly prints on the back side of the tile to form a thick film circuit.
  • CN 201020622756.7 discloses a thick film circuit device comprising a ceramic substrate, a thick film circuit board and a wire, wherein the thick film circuit piece is arranged on a ceramic substrate, the outer side of the ceramic substrate is covered with an epoxy layer, and the wire has two wires. Connected to both sides of the ceramic substrate, the connection between the wire and the ceramic substrate is covered in the epoxy layer.
  • thick film technology has been gradually developed, but at present, there are many technical developments for thick film circuit resistance paste, and there are few thick film component products; ceramics are realized in the above thick film circuit device technology.
  • the thick film circuit is arranged in the pole piece and the epoxy layer, but the heat transfer performance is not very good; the application of the thick film circuit in the product greatly expands the development of the heating product, and the heating device currently available can satisfy the heating performance.
  • the present invention provides a small size, high work efficiency, good environmental protection, high safety performance and use.
  • a long-life coated substrate has a thick film element with high thermal conductivity.
  • the concept of the thick film of the present invention is mainly related to a film, and the thick film refers to a film having a thickness of several micrometers to several tens of micrometers formed by a printing and sintering technique on a carrier, and a material for manufacturing the film layer, Known as a thick film material, the coating is called a thick film coating.
  • the thick film heating element has many advantages such as high power density, fast heating speed, high working temperature, fast heating speed, high mechanical strength, small volume, convenient installation, uniform heating temperature field, long service life, energy saving, environmental protection and safety.
  • the present invention provides a thick film element having a high thermal conductivity of a coated substrate, comprising a carrier, a thick film coating applied to the carrier, and a cover layer overlying the thick film coating, the thick film coating being a heating material,
  • the heating means is electrical heating, wherein the carrier, the thick film coating and the cover layer are selected to be materials that satisfy each of the following inequalities:
  • the T 2 ⁇ T coating layer has the lowest melting point ;
  • the T 2 ⁇ T carrier has the lowest melting point ;
  • Value represents the heat transfer rate of the cover layer; Value representing the rate of heating of the thick film coating; The value indicates the heat transfer rate of the carrier;
  • the ⁇ 1 represents a thermal conductivity of the cover layer at T 1 ;
  • the ⁇ 2 represents a thermal conductivity of the thick film coating at T 2 ;
  • the ⁇ 3 represents a thermal conductivity of the carrier at T 3 coefficient;
  • the A represents the contact area of the thick film coating with the cover layer or the carrier
  • the d 1 represents the thickness of the cover layer;
  • the d 2 represents the thickness of the thick film coating;
  • the d 3 represents the thickness of the carrier;
  • An initial temperature of the T 0 thick film heating element the T 1 represents a surface temperature of the cover layer; the T 2 represents a heating temperature of the thick film coating; and the T 3 represents a surface of the carrier temperature;
  • the thick film coating has a thickness d 2 ⁇ 50 ⁇ m
  • the T carrier has a minimum melting point of >25 ° C;
  • the cover layer refers to a dielectric layer overlying a thick film coating by printing or by sintering or adhesive bonding, the cover layer having a larger area than the thick film coating.
  • the carrier refers to a dielectric layer carrying a thick film coating which is applied to the carrier by printing or coating or spraying or sintering, and is a coating substrate for thick film elements.
  • the thermal conductivity refers to a material having a thickness of 1 m under stable heat transfer conditions, and the temperature difference between the two sides is 1 degree (K, ° C), and the heat transferred through the area of 1 square meter in 1 second (1S),
  • the unit is watts/meter ⁇ degree (W/(m ⁇ K), here is K, which can be replaced by °C).
  • the cover layer, the thick film coating and the carrier are tightly bonded, and the thick film coating is connected to the external electrodes at both ends, and when the thick film coating is energized, the thick film coating is performed. Heating, electric energy is converted into heat energy, thick film coating begins to heat up, and the heating rate of thick film coating can be obtained by detecting the thermal conductivity, contact area, starting temperature, heating temperature and thickness of the thick film coating, and applying the formula It can be calculated, where T 2 represents the heating temperature of the thick film.
  • the technical feature of the present invention is that the coated substrate has a high thermal conductivity capable thick film heating element, and the technical feature requires that the heating rate of the cover layer, the carrier, and the thick film coating meet the following requirements:
  • the limiting condition of the heat transfer rate of the cover layer and the heat transfer rate of the carrier satisfies the following relationship, that is, Wherein 10 ⁇ a ⁇ 10 4 , the heat-generating ability of the thick film element satisfying the above inequality is greater than that of the cover layer, that is, the temperature rise rate of the support is fast, the temperature rise rate of the cover layer is slow, or the temperature difference between the cover layer and the carrier is stable after the heat balance is stabilized.
  • Large, generally thick film elements exhibit the technical effect of carrier heating;
  • the limiting condition of the heating rate of the thick film coating and the heat transfer rate of the carrier satisfies the following relationship, that is, 0 ⁇ c ⁇ 10 3 , if the heating rate of the thick film coating is much higher than the heat transfer rate of the carrier, the continuous accumulation of heat of the thick film coating cannot be conducted in time, causing the temperature of the thick film coating to rise continuously. High, when the temperature exceeds the lowest melting point of the carrier, the carrier begins to melt, or even burn, thereby damaging the structure of the carrier and damaging the thick film heating element;
  • the heating temperature of the thick film coating should not be higher than the lowest melting point of the coating layer or the carrier, and the minimum melting point of the T 2 ⁇ T coating layer should be satisfied, and the lowest melting point of the T 2 ⁇ T carrier should be avoided to avoid the heating temperature being too high and the thick film heating is damaged. element.
  • the heat transfer rate of the cover layer and the carrier is determined by the nature of the material itself and the performance of the thick film heating element product:
  • the heat transfer rate of the carrier is calculated as Wherein ⁇ 3 represents the thermal conductivity of the support, the unit is W/mk, which is determined by the properties of the material from which the support is prepared; d 3 is the thickness of the support, determined by the preparation process and the requirements of the thick film heating element; T 3 Is the surface temperature of the carrier, which is determined by the properties of the thick film heating element;
  • the heat transfer rate of the cover layer is calculated as Where ⁇ 1 represents the thermal conductivity of the cover layer in W/mk, which is determined by the properties of the material from which the cover layer is made; d 1 is the thickness of the cover layer, determined by the preparation process and the requirements of the thick film heating element. ; T 1 is the surface temperature of the cover layer, which is determined by the performance of the thick film heating element.
  • the carrier and the thick film coating are bonded by printing or sintering, and the thick film coating and the cover layer are bonded or glued by printing or coating or spraying or sintering.
  • the area of the carrier and the cover layer without a thick film coating is bonded by printing or coating or spraying or by sintering or bonding.
  • the carrier comprises polyimide, organic insulating material, inorganic insulating material, ceramic, glass ceramic, quartz, crystal, stone material, cloth, fiber.
  • the thick film coating is one or more of silver, platinum, palladium, palladium oxide, gold or rare earth materials.
  • the cover layer is made of one or more of polyester, polyimide or polyether imide, ceramic, silica gel, asbestos, mica plate, cloth, fiber.
  • the area of the thick film coating is less than or equal to the area of the cover layer or carrier.
  • the invention provides a use of a thick film element for coating a product in which the substrate is heated.
  • the thick film component coating substrate of the invention has high thermal conductivity, is suitable for coating a product with a matrix heating, improves heat transfer efficiency, and reduces heat energy loss without heating on both sides;
  • the thick film element of the invention is directly bonded by printing or sintering with a three-layer structure, and the thick film coating is directly heated after being energized, and the heat energy is directly transmitted to the carrier without passing through other mediums, thereby improving heat conduction efficiency, and
  • the invention cover layer is covered on the thick film coating, which avoids the leakage problem of the thick film coating after power-on and improves the safety performance;
  • the thick film component of the present invention is heated by a thick film coating having a thickness of on the order of micrometers, a uniform heating rate after energization, and a long service life.
  • the present invention provides a thick film element having a high thermal conductivity capable of coating a substrate, comprising a carrier, a thick film coating applied to the carrier, and a cover layer overlying the thick film coating, the thick film coating being heated
  • the material is heated by electric heating, wherein the carrier, the thick film coating and the cover layer are selected to satisfy the following relationships:
  • the T 2 ⁇ T coating layer has the lowest melting point ;
  • the T 2 ⁇ T carrier has the lowest melting point ;
  • the thick film coating has a thickness d 2 ⁇ 50 ⁇ m
  • the T carrier has a minimum melting point of >25 ° C;
  • the materials for preparing the 20 kinds of back film element coating layers, thick film coatings and carriers are selected from materials satisfying the above inequalities, specific preparation methods and relationships. as follows:
  • Preparation of polyimide support material selected thermal conductivity of [lambda] thick silver coating was prepared, the thermal conductivity of the material 2 is ⁇ 3, and [lambda] is the thermal conductivity of the covering layer of polyimide prepared material 1, through three layers of material Sinter bonding, the prepared thick film coating has an area of A 2 , the thick film coating has a thickness of d 2 ; the cover layer has an area of A 1 and a thickness of d 1 ; the carrier has an area of A 3 and a thickness of d 3 .
  • the thick film coating After opening the switch of the external DC power supply, the thick film coating is energized, and the thick film is gradually heated. After the thick film element is heated and stabilized, the surface temperature of the cover layer and the carrier after the heat stabilization and the heating temperature of the thick film coating are measured. , by the following formula: The heat transfer rate of the cover layer and the carrier and the rate of heat generation of the thick film coating were calculated.
  • Tables 1 to 4 below are the 20 kinds of thick film components prepared by the applicant. After the thick film components are heated for 2 minutes, the performance data (thermal conductivity, surface temperature), thickness and contact area are measured by the national standard method. The initial temperature is measured before heating.
  • the measurement method of the thermal conductivity of the cover layer, thick film coating and carrier is as follows:
  • thermocouple Place the heating plate and the lower thermocouple on the lower part of the thin test piece; place the upper thermocouple on the upper part of the thin test piece. Note that the thermocouple must be placed in the center of the test piece. The cold end of the thermocouple is placed in the ice bottle;
  • the potentiometer switch is placed in position 1, and the initial temperature of the upper and lower parts of the test piece is measured. When the temperature difference is less than 0.004mv (0.1°C), the experiment can continue;
  • thermoelectric potential of the upper thermocouple is pre-applied with 0.08mv. Turn on the heating switch to start heating, and use the stopwatch to time. When the spot of the spot galvanometer returns to zero, turn off the heating power. Obtaining the excess temperature and heating time of the upper part;
  • thermoelectric potential of the lower thermocouple is measured to obtain the excess temperature and time of the lower part
  • the potentiometer switch is placed in position 2, and the heating switch is turned on to measure the heating current
  • the temperature is measured by a thermocouple thermometer.
  • the thickness is measured by using a micrometer and measuring by stacking and averaging.
  • the measurement method of the melting point is as follows:
  • Testing equipment American TA company differential scanning calorimeter, model DSC2920, the instrument has passed the test (A grade), the test basis: JG (teaching committee) ⁇ 014-1996 thermal analyzer verification procedures ⁇
  • Standard material for instrument calibration thermal analysis standard material (indium), standard 429.75K (156.6O).
  • Table 1 is the performance data for detecting the thick film element coating layers in Examples 1 to 20, as follows:
  • Table 2 is a graph showing the performance data of the thick film coating of the thick film elements in Examples 1 to 20, as shown in Table 2 below:
  • Table 3 is a graph showing the performance data of the thick film element carriers in Examples 1 to 20, as shown in Table 3 below:
  • Table 4 is calculated according to the performance data in Table 1/2/3 above, and the heat conduction rate data is calculated, and the heat transfer rate values of the cover layer, the thick film coating layer and the carrier layer are calculated by the ratio to obtain the material satisfying the present invention.
  • a qualification that satisfies the following relationship: Wherein 10 ⁇ a ⁇ 10 4 , 0 ⁇ b ⁇ 10 6 , 0 ⁇ c ⁇ 10 3 ;
  • Tables 5 to 8 are the respective performance data of Comparative Example 1-10 for the thick film element of the present invention, and the data monitoring methods are the same as those in Tables 1 to 4, and the specific data are as follows:
  • the thick film elements provided in Comparative Tables 1-10 in the above table do not meet the requirements of the material selection in accordance with the present invention, and do not satisfy the inequality relationship of the invention. After the electric heating, the difference in the heating temperature of the two sides of the comparative examples 1-10 is not large. The thermal temperature difference between the cover layer and the carrier surface is below 15 ° C.
  • the selection and preparation of the thick film component does not meet the requirements of the coated substrate of the present invention having a high thermal conductivity thick film component, and does not satisfy the requirements of the product of the present invention. This confirms the heat transfer rate relationship in the present invention.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Laminated Bodies (AREA)

Abstract

一种涂覆基质具有高导热能力的厚膜元件,包括载体、涂覆于载体上的厚膜涂层和覆盖于厚膜涂层上的覆盖层,所述厚膜涂层为加热材料,加热方式为电加热,覆盖层、厚膜涂层以及载体三者的材料选择在传热过程中满足下列关系式(I),(II), (III),其中10≤a≤104,0<b≤106,0<c≤103。该厚膜元件涂覆基质具有高导热能力,适用于涂覆基质发热的产品,提高传热效率,减少无需两面加热情况下的热能损失;该厚膜发热元件可应用在只需涂覆基质具有高导热能力的产品上,满足市场上多功能加热产品的需求。

Description

一种涂覆基质具有高导热能力的厚膜元件 技术领域
本发明涉及厚膜领域,具体为一种涂覆基质具有高导热能力的厚膜元件。
背景技术
厚膜发热元件是指在基体上,将发热材料制成厚膜,进行通电发热的发热元件。传统的加热方式,包括电热管加热和PTC加热,电热管加热元件是以金属管为外套,在金属管内以螺旋状分布镍铬或铁铬合金,作为加热丝,在间隙空间填充具有良好导热和绝缘特性的氧化镁砂,两端用硅胶密封;PTC加热元件,以PTC陶瓷作为发热材料。目前的电热管加热和PTC加热的方式是间接加热,表现出较低的热效率,且外形体积大而笨重,从环保角度来看,这两种加热器反复加热后,不耐脏,不易清洁,且PTC加热元件中含有铅等有害物质,易氧化,功率会衰减,使用寿命短。
CN201310403454.9公开了一种基于瓷砖的厚膜电路电阻浆料及其制备方法,目的在于提供一种能与瓷砖相匹配的电阻浆料,为新型地暖加热元件的制备提供一种可能。它的原料包括固相成分(微晶玻璃粉、银粉)和有机粘结剂,各原料的重量百分含量为:微晶玻璃粉70~85%,有机粘结剂15~30%,以上重量百分含量之和为100%,主要用作直接印刷在瓷砖背面构成厚膜电路的电阻浆料。
CN 201020622756.7公开了一种厚膜电路装置,包括陶瓷基片、厚膜电路片及电线,厚膜电路片设在陶瓷基片上,该陶瓷基片的外侧包覆环氧树脂层,电线有两根,连接在陶瓷基片的两侧,电线与陶瓷基片的连接处包覆在环氧树脂层内。
从上述技术中可以看出厚膜技术已逐渐发展起来,但是目前主要是针对厚膜电路电阻浆料的技术研发较多,厚膜元件产品却甚少;上述厚膜电路装置技术中实现了陶瓷极片和环氧树脂层内设置厚膜电路,但其传热性能并不十分优良;厚膜电路在产品中的应用大大扩宽了加热产品的开发,目前出现的加热器件能满足加热性能,但单面传热的加热元件却很少,或者单面传热效果不佳,无法做到保持单面具有高导热能力,从而减少热损失。
发明内容
为解决上述问题,本发明提供一种体积小﹑工作效率高﹑环保性好﹑安全性能高和使用 寿命长的涂覆基质具有高导热能力的厚膜元件。
本发明所述厚膜的概念主要是相对薄膜而言的,厚膜是指在载体上用印刷烧结技术所形成的厚度为几微米到数十微米的膜层,制造这种膜层的材料,称为厚膜材料,做成的涂层称为厚膜涂层。厚膜发热体具有功率密度大、加热速度快、工作温度高、升温速度快、机械强度高、体积小,安装方便、加热温度场均匀、寿命长、节能环保、安全等众多优点。
本发明提供涂覆基质具有高导热能力的厚膜元件,包括载体、涂覆于载体上的厚膜涂层和覆盖于厚膜涂层上的覆盖层,所述厚膜涂层为加热材料,加热方式为电加热,其中对所述载体、厚膜涂层以及覆盖层的选择为满足以下每个不等式的材料:
Figure PCTCN2016077439-appb-000001
所述10≤a≤104,0<b≤106,0<c≤103
所述T2<T覆盖层最低熔点
所述T2<T载体最低熔点
所述T0≤25℃
其中所述
Figure PCTCN2016077439-appb-000002
的值表示所述覆盖层的传热速率;所述
Figure PCTCN2016077439-appb-000003
的值表示所述厚膜涂层的发热速率;所述
Figure PCTCN2016077439-appb-000004
的值表示所述载体的传热速率;
所述λ1表示所述覆盖层在T1时的导热系数;所述λ2表示所述厚膜涂层在T2时的导热系数;所述λ3表示所述载体在T3时的导热系数;
所述A表示所述厚膜涂层与覆盖层或者载体的接触面积;
所述d1表示所述覆盖层的厚度;所述d2表示所述厚膜涂层的厚度;所述d3表示所述载体的厚度;
所述T0厚膜发热元件的初始温度;所述T1表示所述覆盖层的表面温度;所述T2表示所述厚膜涂层的加热温度;所述T3表示所述载体的表面温度;
所述厚膜涂层的厚度d2≤50微米;
且d1≥10微米,20厘米≥d3≥10微米;
所述T载体最低熔点>25℃;
所述载体的导热系数λ3≥覆盖层的导热系数λ1
所述覆盖层是指通过印刷或和烧结或粘胶粘结覆盖在厚膜涂层上面的介质层,覆盖层的面积大于厚膜涂层。
所述载体是指承载厚膜涂层的介质层,厚膜涂层通过印刷或涂覆或喷涂或者烧结涂覆在载体上,为厚膜元件的涂覆基质。
所述导热系数是指在稳定传热条件下,1m厚的材料,两侧表面的温差为1度(K,℃),在1秒钟内(1S),通过1平方米面积传递的热量,单位为瓦/米·度(W/(m·K),此处为K,可用℃代替)。
在厚膜加热元件的电加热部位,覆盖层、厚膜涂层以及载体是紧密粘接的,厚膜涂层的两端连接外接电极,当厚膜涂层通电后,对厚膜涂层进行加热,电能转化为热能,厚膜涂层开始发热,厚膜涂层的发热速率可以通过检测得到厚膜涂层的导热系数、接触面积、起始温度、加热温度以及厚度,并运用公式
Figure PCTCN2016077439-appb-000005
可以计算出来,其中T2表示厚膜的加热温度。
本发明的技术特征是涂覆基质具有高导热能力的厚膜发热元件,该技术特征要求覆盖层、载体、厚膜涂层的发热速率满足以下几个要求:
(1)覆盖层的传热速率与载体的传热速率的限定条件满足如下关系式,即
Figure PCTCN2016077439-appb-000006
Figure PCTCN2016077439-appb-000007
其中10≤a≤104,满足上述不等式的厚膜元件的载体发热能力大于覆盖层,即载体的升温速度快,覆盖层的升温速度慢,或者达到受热平衡稳定后覆盖层与载体的温差较大,总体上是厚膜元件呈现出载体加热的技术效果;
(2)厚膜涂层的发热速率与覆盖层的传热速率的限定条件满足如下关系式,即
Figure PCTCN2016077439-appb-000008
其中0<b≤106,如果厚膜涂层的发热速率比覆盖层的传热速率高出太多,厚膜涂层持续不断的积累的热量不能及时传导出去,致使厚膜涂层的温度不断升高,当温度超过覆盖层的最低熔点时,覆盖层开始融化,甚至燃烧,从而破坏覆盖层或者载体的结构,损坏厚膜加热元件;
(3)厚膜涂层的发热速率与载体的传热速率的限定条件满足如下关系式,即
Figure PCTCN2016077439-appb-000009
0≤c≤103,如果厚膜涂层的发热速率比载体的传热速率高出太多,厚膜涂层持续不断的积累的热量不能及时传导出去,致使厚膜涂层的温度不断升高,当温度超过载体的最低熔点时,载体开始融化,甚至燃烧,从而破坏载体的结构,损坏厚膜加热元件;
(4)厚膜涂层的加热温度不能高于覆盖层或者载体的最低熔点,需满足T2< T覆盖层最低熔点,T2<T载体最低熔点,避免加热温度过高而损坏厚膜加热元件。
满足上述几个要求,覆盖层、载体的传热速率是由其材料本身的性质以及该厚膜加热元件产品的性能决定:
载体的传热速率计算公式为
Figure PCTCN2016077439-appb-000010
其中λ3表示所述载体的导热系数,单位是W/m.k,是由制备载体的材料的性质决定的;d3是表示载体的厚度,由制备工艺以及厚膜加热元件要求决定的;T3是载体的表面温度,是由厚膜加热元件性能决定的;
覆盖层的传热速率计算公式为
Figure PCTCN2016077439-appb-000011
其中λ1表示所述覆盖层的导热系数,单位是W/m.k,是由制备覆盖层的材料的性质决定的;d1是表示覆盖层的厚度,由制备工艺以及厚膜加热元件要求决定的;T1是覆盖层的表面温度,是由厚膜加热元件性能决定的。
优选的,所述所述载体的导热系数λ3≥3W/m.k,所述覆盖层的导热系数λ1≤3W/m.k;所述10≤a≤104,104≤b≤106,10≤c≤103
优选的,所述载体与厚膜涂层之间通过印刷或者烧结粘结,所述厚膜涂层与覆盖层通过印刷或涂覆或喷涂或和烧结粘结或粘胶粘结。
优选的,所述载体与覆盖层中间没有厚膜涂层的区域通过印刷或涂覆或喷涂或和烧结粘结或粘胶粘结。
优选的,所述载体包括聚酰亚胺、有机绝缘材料、无机绝缘材料、陶瓷、微晶玻璃、石英、水晶、石材材料、布料、纤维。
优选的,所述厚膜涂层为银、铂、钯、氧化钯、金或者稀土材料中的一种或几种。
优选的,所述覆盖层为聚酯、聚酰亚胺或聚醚亚胺、陶瓷、硅胶、石棉、云母板、布料、纤维中的一种或几种制成的。
优选的,所述厚膜涂层的面积小于或等于覆盖层或载体的面积。
本发明提供的一种厚膜元件的用途,用于涂覆基质发热的产品。
本发明的有益效果:
1、本发明的厚膜元件涂覆基质具有高导热能力,适用于涂覆基质发热的产品,提高传热效率,减少无需两面加热情况下的热能损失;
2、本发明的厚膜元件从用三层结构通过印刷或烧结直接粘接,厚膜涂层通电后对载体直接加热,无需在通过其他介质,热能直接传导给载体,提高导热效率,且本发明覆盖层是覆盖在厚膜涂层上,避免了厚膜涂层在通电后漏电问题,提高安全性能;
3、本发明的厚膜元件是采用厚膜涂层加热的,涂层的厚度在微米级别,在通电后发热速率均匀,且使用寿命长。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明:
本发明提供一种涂覆基质具有高导热能力的厚膜元件,包括载体、涂覆于载体上的厚膜涂层和覆盖于厚膜涂层上的覆盖层,所述厚膜涂层为加热材料,加热方式为电加热,其中对所述载体、厚膜涂层以及覆盖层的选择为满足以下每个关系式的材料:
Figure PCTCN2016077439-appb-000012
所述10≤a≤104,0<b≤1,0<c≤103;优选的,所述10≤a≤104,104≤b≤106,10≤c≤103
所述T2<T覆盖层最低熔点
所述T2<T载体最低熔点
所述T0≤25℃
所述厚膜涂层的厚度d2≤50微米;
且d1≥10微米,20厘米≥d3≥10微米;
所述T载体最低熔点>25℃;
所述载体的导热系数λ3≥覆盖层的导热系数λ1
下面实施例中给出了本申请人制备的20种厚膜元件,这20种后膜元件覆盖层、厚膜涂层、载体的制备材料是选自满足上述不等式的材料,具体制备方法以及关系如下:
实施例
选用导热系数为λ2的银浆材料制备厚膜涂层,导热系数为λ3的聚酰亚胺材料制备载体,导热系数为λ1的聚酰亚胺材料制备覆盖层,将三层材料通过烧结粘结,所制备的厚膜涂层的面积为A2,厚膜涂层的厚度为d2;覆盖层的面积为A1,厚度为d1;载体的面积为A3,厚度为d3
打开外接直流电源的开关后,给厚膜涂层通电,厚膜逐渐升温,等到厚膜元件发热稳定后,测出受热稳定后的覆盖层和载体的表面温度,以及厚膜涂层的加热温度,通过如下计算公式:
Figure PCTCN2016077439-appb-000013
计算出覆盖层和载体的传热速率以及厚膜涂层的 发热速率。
下面表1至表4是本申请人制备的20种厚膜元件,将厚膜元件通电加热2分钟后,采用国家标准方法测量得到表中性能数据(导热系数、表面温度),厚度、接触面积、初始温度在加热前测量。
覆盖层、厚膜涂层、载体导热系数的测量方法为:
1.接通电源,调节加热电压至规定值,打开仪器6V电源开关,预热20分钟;
2.光点检流计零位校正;
3.根据室温校正UJ31型电位差计的标准工作电压,电位差计转换开关放在标准位置,调整电位差计的工作电流;
由于标准电池的电压随温度变化,室温校正按下式进行计算:
Et=E0-[39.94(t-20)+0.929(t-20)2]
其中,E0=1.0186V
4.在薄试件的下部放上加热板及下部热电偶;在薄试件的上部放上上部热电偶。注意热电偶一定要放在试件的中心位置。热电偶的冷端放在冰瓶内;
5.电位差计转换开关放在位置1,测出试件的上、下部的初始温度,要求温差小于0.004mv(0.1℃)时实验方可继续进行;
6.上部热电偶的初始热电势预先加0.08mv,打开加热开关开始加热,同时用秒表计时,当光点检流计的光点回到零位时,关闭加热电源。得到上部的过余温度及加热时间;
7.过4~5分钟后测出下部热电偶的热电势,得到下部的过余温度及时间;
8.电位差计转换开关放在位置2,打开加热开关测出加热电流;
9.实验结束,关闭电源,整理仪器设备。
温度的测量方法为:采用热电偶式温度计测量,
1、连接感温线到发热部件的发热涂层表面、载体表面、覆盖层表面、室外空气中。
2、采用额定功率对发热体进行通电,测试各个部件的温度。
3、通过连接的电脑记录产品各个时间段各个部件的温度,T0;T1;T2;T3;
厚度的测量方法为:采用千分尺进行量度,采用堆叠求平均的方式进行测定。
熔点的测量方法具体如下:
检测仪器:美国TA公司差示扫描量热仪,型号DSC2920,该仪器经检定合格(A级),检定依据:JG(教委){014—1996热分析仪检定规程}
1.环境条件温度:(20~25)℃,相对湿度:<80%。
2.仪器校准用标准物质:热分析标准物质(铟),标准429.75K(156.6O)。
3.测量过程:检测过程参照“GB/T19466.3—2O04/IS0
4.重复测量三次以确保仪器状态正常,然后再进行样品测试;称样量:(1~2)nag,准确到0.01mg,置于铝制样品盘内;检测条件:以1O℃/min升温到200℃;重复测量10次;测量模型随着电脑和仪器采集样品熔点,测定可以通过对测量数据的自动采集和谱图的程序分析,由熔融吸热峰的初始外推温度直接给出测量模型,用贝塞尔公式计算得出测定结果。
表1是检测实施例1至实施例20中厚膜元件覆盖层的性能数据,具体如下:
表1
Figure PCTCN2016077439-appb-000014
表2是检测实施例1至实施例20中厚膜元件厚膜涂层的性能数据,具体如下表2所示:
表2
Figure PCTCN2016077439-appb-000015
表3是检测实施例1至实施例20中厚膜元件载体的性能数据,具体如下表3所示:
表3
Figure PCTCN2016077439-appb-000016
Figure PCTCN2016077439-appb-000017
表4是根据上述表1/2/3中各性能数据,计算得到热传导速率数据,并将覆盖层、厚膜涂层、载体三层的传热速率数值大小按比值运算得到满足本发明的材料限定条件,即满足下列关系式:
Figure PCTCN2016077439-appb-000018
其中10≤a≤104,0<b≤106,0<c≤103;;
表4
Figure PCTCN2016077439-appb-000019
Figure PCTCN2016077439-appb-000020
表4结果表明实施例1至实施例20制备的厚膜元件均满足不等式,且上述厚膜元件的载体层即涂覆基质层具有发热功能,两面温差在40度以上,实现涂覆基质面发热功能,在产品应用时,只需要厚膜元件在涂覆基质面加热的情况下会减少热损失;在通电两分钟后温度最高能上升到100℃以上,说明本发明的厚膜发热元件发热效率高。
表5至表8是针对本发明的厚膜元件的对比例1-10的各性能数据,各项数据监测方法跟表1-表4中一样,具体数据如下:
表5
Figure PCTCN2016077439-appb-000021
表6
Figure PCTCN2016077439-appb-000022
表7
Figure PCTCN2016077439-appb-000023
表8
Figure PCTCN2016077439-appb-000024
上述表中对比例1-10提供的厚膜元件在选材以及结构不符合本发明的选材要求,不满足不发明的不等式关系,在通电加热后,对比例1-10的两面发热升温差别不大,覆盖层和载体面的发热温差在15℃以下,这种选材设置和制备出来的厚膜元件不符合本发明的涂覆基质具有高导热能力厚膜元件的要求,不满足本发明产品要求,以此证实本发明中传热速率关系。
根据上述说明书的揭示和教导,本发明所属领域的技术人员还可以对上述实施方式进行变更和修改。因此,本发明并不局限于上面揭示和描述的具体实施方式,对发明的一些修改和变更也应当落入本发明的权利要求的保护范围内。此外,尽管本说明书中使用了一些特定的术语,但这些术语只是为了方便说明,并不对本发明构成任何限制。

Claims (9)

  1. 一种涂覆基质具有高导热能力的厚膜元件,其特征在于,包括载体、涂覆于载体上的厚膜涂层和覆盖于厚膜涂层上的覆盖层,所述厚膜涂层为加热材料,加热方式为电加热,其中对所述载体、厚膜涂层以及覆盖层的选择为满足以下每个关系式的材料:
    Figure PCTCN2016077439-appb-100001
    所述10≤a≤104,0<b≤106,0<c≤103
    所述T2<T覆盖层最低熔点
    所述T2<T载体最低熔点
    所述T0≤25℃
    其中所述
    Figure PCTCN2016077439-appb-100002
    的值表示所述覆盖层的传热速率;所述
    Figure PCTCN2016077439-appb-100003
    的值表示所述厚膜涂层的发热速率;所述
    Figure PCTCN2016077439-appb-100004
    的值表示所述载体的传热速率;
    所述λ1表示所述覆盖层在T1时的导热系数;所述λ2表示所述厚膜涂层在T2时的导热系数;所述λ3表示所述载体在T3时的导热系数;
    所述A表示所述厚膜涂层与覆盖层或者载体的接触面积;
    所述d1表示所述覆盖层的厚度;所述d2表示所述厚膜涂层的厚度;所述d3表示所述载体的厚度;
    所述T0厚膜发热元件的初始温度;所述T1表示所述覆盖层的表面温度;所述T2表示所述厚膜涂层的加热温度;所述T3表示所述载体的表面温度;
    所述厚膜涂层的厚度d2≤50微米;
    且d1≥10微米,20厘米≥d3≥10微米;
    所述T载体最低熔点>25℃;
    所述载体的导热系数λ3≥覆盖层的导热系数λ1
  2. 根据权利要求1所述的厚膜元件,其特征在于,所述所述载体的导热系数λ3≥3W/m.k,所述覆盖层的导热系数λ1≤3W/m.k;所述10≤a≤104,104≤b≤106,10≤c≤103
  3. 根据权利要求1所述的厚膜元件,其特征在于,所述载体与厚膜涂层之间通过印刷或涂覆或喷涂或和烧结粘结,所述厚膜涂层与覆盖层通过印刷或者烧结粘结或粘胶粘结。
  4. 根据权利要求2所述的厚膜元件,其特征在于,所述载体与覆盖层中间没有厚膜涂层的区域通过印刷或者烧结粘结。
  5. 根据权利要求1所述的厚膜元件,其特征在于,所述载体包括聚酰亚胺、有机绝 缘材料、无机绝缘材料、陶瓷、微晶玻璃、石英、水晶、石材材料、布料、纤维。
  6. 根据权利要求1所述的厚膜元件,其特征在于,所述厚膜涂层为银、铂、钯、氧化钯、金或者稀土材料中的一种或几种。
  7. 根据权利要求1所述的厚膜元件,其特征在于,所述覆盖层为聚酯、聚酰亚胺或聚醚亚胺、陶瓷、硅胶、石棉、云母板、布料、纤维中的一种或几种制成的。
  8. 根据权利要求1所述的厚膜元件,其特征在于,所述厚膜涂层的面积小于或等于覆盖层或载体的面积。
  9. 一种厚膜发热元件的用途,用于涂覆基质单面加热的产品。
PCT/CN2016/077439 2016-02-03 2016-03-26 一种涂覆基质具有高导热能力的厚膜元件 WO2017133067A1 (zh)

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DK16888891.5T DK3253176T3 (da) 2016-02-03 2016-03-26 Tykfilm-element coated med substrat og som har høj varmeledningskapacitet
PL16888891T PL3253176T3 (pl) 2016-02-03 2016-03-26 Element grubowarstwowy pokryty podłożem i posiadający wysoką przewodność cieplną
US15/529,086 US11419186B2 (en) 2016-02-03 2016-03-26 Thick film element having coated substrate with high heat conductivity
JP2017525114A JP6315643B1 (ja) 2016-02-03 2016-03-26 被覆基材に高熱伝導能力がある厚膜素子
EA201790671A EA037599B1 (ru) 2016-02-03 2016-03-26 Толстопленочный элемент с подложкой с нанесенным покрытием, имеющим высокую теплопроводность
EP16888891.5A EP3253176B1 (en) 2016-02-03 2016-03-26 Thick film element coated with substrate and having high heat-conduction capability
ES16888891T ES2767804T3 (es) 2016-02-03 2016-03-26 Elemento de película gruesa recubierto con un sustrato y que tiene una alta capacidad de conducción térmica

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CN201610075017.2A CN106686770B (zh) 2016-02-03 2016-02-03 一种涂覆基质具有高导热能力的厚膜元件

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DK3253176T3 (da) 2020-02-03
JP2018513521A (ja) 2018-05-24
PT3253176T (pt) 2020-01-16
CN106686770A (zh) 2017-05-17
EP3253176A1 (en) 2017-12-06
CN106686770B (zh) 2019-09-10
ES2767804T3 (es) 2020-06-18
EP3253176A4 (en) 2018-07-25
US11419186B2 (en) 2022-08-16
EP3253176B1 (en) 2019-11-13
EA037599B1 (ru) 2021-04-20
PL3253176T3 (pl) 2020-06-15
JP6315643B1 (ja) 2018-04-25
US20180332667A1 (en) 2018-11-15

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