WO2017098758A1 - 光学式指紋認証装置 - Google Patents
光学式指紋認証装置 Download PDFInfo
- Publication number
- WO2017098758A1 WO2017098758A1 PCT/JP2016/075651 JP2016075651W WO2017098758A1 WO 2017098758 A1 WO2017098758 A1 WO 2017098758A1 JP 2016075651 W JP2016075651 W JP 2016075651W WO 2017098758 A1 WO2017098758 A1 WO 2017098758A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- organic
- fingerprint authentication
- optical fingerprint
- light emitting
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
- G06F21/31—User authentication
- G06F21/32—User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/117—Identification of persons
- A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
- A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/68—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
- A61B5/6801—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
- A61B5/6813—Specially adapted to be attached to a specific body part
- A61B5/6825—Hand
- A61B5/6826—Finger
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T1/00—General purpose image data processing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/1365—Matching; Classification
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0233—Special features of optical sensors or probes classified in A61B5/00
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
- A61B5/0062—Arrangements for scanning
- A61B5/0064—Body surface scanning
Definitions
- the present invention relates to an optical fingerprint authentication apparatus that performs personal authentication by an optical method using a fingerprint. More specifically, the present invention relates to an optical fingerprint authentication device including a fingerprint information reading unit using an organic electroluminescence element as a light source for illumination.
- a light emitting diode (hereinafter abbreviated as LED) is disposed as a light source for illumination next to a solid-state imaging device on a wiring board, and the light is emitted from the LED for illumination.
- a method is disclosed in which light enters the finger and scattered light passes through the fingerprint and enters the solid-state imaging device to recognize the fingerprint pattern.
- an illumination LED is arranged next to a solid-state imaging device, and light emitted from the illumination LED passes through a protective member and enters the inside of the finger.
- a method for recognizing a fingerprint pattern by passing through a protective member and entering a solid-state imaging device is disclosed.
- an image sensor solid-state imaging device
- a protective member are stacked on a circuit board, and a finger is brought into close contact with the surface of the protective member.
- an illumination LED is disposed on a substrate and next to a light sensor, and the light is applied to a finger through a light guide.
- Patent Document 1 discloses a fingerprint input device that uses an LED as a light source for illumination and captures a fingerprint pattern generated by scattered light inside the finger with the image sensor while moving the relative position between the finger and the image sensor. ing.
- Patent Document 2 is an optical fingerprint input device that irradiates light from an LED onto a finger surface and receives reflected light from the finger surface with an image sensor, and includes an imaging chip having a specific structure. A configuration is proposed.
- each fingerprint authentication device proposed above uses an LED as a light source for illumination, it is necessary to incorporate a light guide plate or the like as the illumination unit, resulting in a thick structure. Therefore, it has been a major obstacle from the viewpoint of thinning the device. Further, the LED has a problem that it is difficult to process into a shape having a curved surface such as a circle or an ellipse due to its structure.
- the present invention has been made in view of the above problems, and its solution is to apply an organic electroluminescence panel as an illumination light source, and to have a thin configuration and various types of fingerprint information according to the purpose.
- An optical fingerprint authentication device including a reading unit is provided.
- the present inventor has at least a light source and an image sensor, applies an organic electroluminescence panel (hereinafter also referred to as an organic EL panel) as the light source, and the organic EL.
- the panel is composed of a light-emitting area composed of organic electroluminescence elements (hereinafter also referred to as organic EL elements) and a light-transmitting non-light-emitting area, and an image sensor is disposed at least at a position adjacent to the non-light-emitting area.
- An optical fingerprint authentication device that has at least a light source and an image sensor and detects diffused light, As the light source, it has an organic electroluminescence panel,
- the organic electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light transmissive non-light emitting part.
- An optical fingerprint authentication apparatus comprising a fingerprint information reading unit in which the image sensor is arranged at a position adjacent to the non-light emitting unit.
- the organic electroluminescence element has an organic functional layer unit between a pair of opposing electrodes, wherein one of the electrodes is a light transmissive electrode and the other is a non-light transmissive electrode.
- the optical fingerprint authentication device according to item 1.
- the organic electroluminescence element has an organic functional layer unit between a pair of opposed electrodes, and each of the electrodes is a light transmissive electrode.
- optical fingerprint authentication device 4.
- the light transmissive electrode is made of an oxide semiconductor or a thin film metal or alloy.
- optical fingerprint authentication device according to any one of Items 2 to 4, wherein the light-transmitting non-light-emitting portion includes a light-transmitting electrode.
- the organic electroluminescence panel includes organic electroluminescence elements having a continuous configuration in an outer peripheral region, and a central portion is the light-transmitting non-light-emitting portion.
- the optical fingerprint authentication device according to any one of the above.
- the organic electroluminescence panel is characterized in that a plurality of organic electroluminescence elements are arranged in parallel in a stripe shape, and the light-transmitting non-light-emitting portion is formed between the stripe-shaped organic electroluminescence elements.
- the optical fingerprint authentication device according to any one of claims 1 to 6.
- the organic electroluminescence panel is characterized in that a plurality of independent organic electroluminescence elements are arranged apart from each other in an outer peripheral region, and a central portion is the light-transmitting non-light emitting portion.
- the optical fingerprint authentication device according to any one of items 6 to 6.
- an optical fingerprint authentication device including a fingerprint information reading unit having an illumination light source of various shapes according to the purpose with a thin configuration.
- optical fingerprint authentication apparatus having the configuration defined in the present invention and the mechanism of the effects thereof are presumed as follows.
- an LED has been widely used as a light irradiation light source, but the LED has an advantage in terms of the life of the light source.
- the LED has an advantage in terms of the life of the light source.
- the present inventor has found that the above problem can be solved by applying a light source to an organic electroluminescence panel having an organic EL element. .
- an organic EL element having an arbitrary light emission pattern can be formed by utilizing the characteristics of the organic EL element as a thin film light emitting element and the formation method (for example, chemical vapor deposition method or wet coating method). It is possible to design a fingerprint information reading unit having detection areas of various shapes required for a fingerprint authentication apparatus, and it is possible to cope with fingerprint authentication apparatuses having various needs. In addition, by realizing a uniform light irradiation light source having various shapes, the recognition rate of the fingerprint authentication device can be improved.
- Schematic which shows an example of the whole structure of the fingerprint information reading part which comprises the optical fingerprint authentication apparatus of this invention
- Schematic sectional view showing an example of the configuration of an organic EL panel applicable to the present invention (Embodiment 1) Schematic sectional view showing another example of the configuration of an organic EL panel applicable to the present invention (Embodiment 2) Schematic sectional view showing another example of the configuration of an organic EL panel applicable to the present invention (Embodiment 3) Schematic sectional view showing another example of the configuration of an organic EL panel applicable to the present invention (Embodiment 4) Schematic sectional view showing another example of the configuration of an organic EL panel applicable to the present invention (Embodiment 5) Schematic sectional view showing a first step of a method for forming an organic EL panel applicable to the present invention (Embodiment 6) Schematic sectional view showing a second step of a method for forming an organic
- the optical fingerprint authentication device of the present invention is an optical fingerprint authentication device that includes at least a light source and an image sensor and includes a fingerprint information reading unit that detects diffused light, and has an organic electroluminescence panel as the light source.
- the organic electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light transmissive non-light emitting part, and the image sensor is disposed at a position adjacent to the non-light emitting part. It is characterized by that. This feature is a technical feature common to or corresponding to the claimed invention.
- an organic EL element has an organic functional layer unit between a pair of opposed electrodes, and one of the electrodes is light transmissive, from the viewpoint that the effect intended by the present invention can be further expressed.
- the other is a non-light transmissive electrode, and the light emitting surface is only on one side, so that the irradiation light can be efficiently applied to the fingerprint detector and the image sensor can receive light. This is preferable from the viewpoint of increasing the sensitivity.
- the organic EL element can be designed as a pair of opposed electrodes, both light-transmitting electrodes, and a double-sided light emitting type.
- the transparent electrode constituting the organic EL element is preferably composed of an oxide semiconductor or a thin-film metal or alloy because an electrode having both high light transmittance and excellent conductivity can be obtained.
- forming a light transmissive electrode in the light transmissive non-light-emitting portion or having a light transmissive electrode and an organic functional layer unit makes the manufacturing method of the optical fingerprint authentication device easier. It is preferable from a viewpoint that can be made.
- the organic EL elements are arranged on the outer periphery of the ellipse, and the light-transmitting non-light emitting part is provided in the center.
- a method of forming or arranging a plurality of striped organic EL elements in parallel in a separated state and forming a light-transmitting non-light emitting portion between the organic EL elements is necessary for efficient fingerprint authentication. This is a preferred form from the viewpoint of obtaining optical information.
- the organic electroluminescence panel emits light having a wavelength in the visible light region, or has a specification for emitting light having a wavelength in the infrared region, from the viewpoint of expanding the usage.
- the “organic EL panel” as used in the present invention refers to a panel composed of a light-emitting part region composed of organic EL elements and a light-transmitting non-light-emitting part on the same plane.
- the “organic EL element” as used in the present invention is a surface light source that irradiates a specimen surface (specifically, a fingerprint surface) for fingerprint authentication, and is mainly opposed to a transparent substrate.
- description and description of the sealing member may be omitted for convenience of explanation. Further, in the detailed description of the present invention described below, description and description of a control circuit and wiring for controlling light emission of the organic EL element are omitted.
- the “organic functional layer unit” in the present invention will be described later with reference to FIG. 2.
- the first carrier transporting functional layer group 1 for example, a hole injection layer, a hole is formed on a substrate.
- a transport layer, a light emitting layer containing a phosphorescent compound, and the like, and a second carrier transport function layer group 2 for example, a hole blocking layer, an electron transport layer, an electron injection layer, and the like. Refers to the configuration.
- the “light emitting area” refers to a region where all of the anode, the organic functional layer unit, and the cathode exist in the layer thickness direction.
- the “anode” is an electrode to which (+) is applied as a voltage, and may be referred to as “anode” or “first electrode”.
- the “cathode” is an electrode to which ( ⁇ ) is applied as a voltage, and may be referred to as “cathode” or “second electrode”.
- light transmittance as used in the present invention means that the light transmittance at a wavelength of 550 nm is 60% or more, preferably 70% or more, and more preferably 80% or more.
- Non-light-transmitting means that the light transmittance at a wavelength of 550 nm is 40% or less, preferably 30% or less, and more preferably 20% or less.
- the optical fingerprint authentication apparatus of the present invention mainly has a light source and an image sensor, and an organic EL panel composed of a light emitting part region constituted by an organic EL element and a light transmissive non-light emitting part as a light source. And having a fingerprint information reading unit in which the image sensor is arranged at a position adjacent to the non-light emitting unit.
- FIG. 1 is a schematic diagram showing an example of the overall configuration of a fingerprint reading unit constituting the optical fingerprint authentication apparatus of the present invention.
- the fingerprint information reading unit (100) of the optical fingerprint authentication apparatus shown in FIG. 1 includes an organic EL panel (P) composed of an organic EL element (OLED) and a light-transmitting non-light emitting unit (12), An image sensor (S) for reading the fingerprint information of the specimen by an optical method is disposed below the light transmissive non-light emitting portion (12).
- 11 is a glass substrate for holding a finger (F).
- Light (L1, also referred to as irradiation light) is emitted from an organic EL element (OLED) which is a light source constituting the organic EL panel (P), and is applied to the fingerprint surface of the finger (F).
- Reflected light (L2, also referred to as an optical signal) is passed through the light-transmitting non-light emitting portion (12) of the organic EL panel (P), and the optical information is read by the image sensor (S).
- the image information read by the image sensor (S) is analyzed and compared with the stored (registered) fingerprint information to perform fingerprint authentication.
- the image sensor (S) applied to the optical fingerprint authentication device of the present invention is also called a solid-state imaging device, and examples thereof include a CCD (Charge Coupled Device) type and a CMOS (Complementary Metal Oxide Semiconductor) type image sensor. it can.
- CCD Charge Coupled Device
- CMOS Complementary Metal Oxide Semiconductor
- FIG. 2 is a schematic cross-sectional view showing a basic configuration including an organic functional layer unit of an organic EL element applicable to the present invention.
- the organic EL element (OLED) according to the present invention shown in FIG. 2 is an organic functional layer unit including a light emitting layer on a transparent substrate (1) having light transparency, for example, a glass substrate or a flexible resin substrate. A structure in which (U) is laminated is shown.
- FIG. 2 shows an example in which a gas barrier layer (2) is formed on a transparent substrate (1) having optical transparency.
- an anode (3) is formed as a first electrode
- a first carrier transporting functional layer group composed of, for example, a hole injection layer, a hole transport layer, etc. 1 (4), a light emitting layer (5), and a second carrier transporting functional layer group 2 (6) composed of, for example, an electron transporting layer, an electron injecting layer, and the like are sequentially laminated to form an organic functional layer unit (U ).
- a cathode (7) is provided as a second electrode on the organic functional layer unit (U).
- covers the said laminated body whole is provided, and comprises an organic EL element (OLED). Yes.
- the anode (3) as the first electrode is a transparent electrode having the light transmittance defined above
- the cathode (7) as the second electrode is a non-light transmissive electrode.
- the light emitting area is an area where the anode (3), the organic functional layer unit (U), particularly the light emitting layer (5), and the cathode (7) are all on the same plane.
- the light-transmitting anode (3) as the first electrode is formed on the transparent substrate (1) having the gas barrier layer (2).
- a carrier transport functional layer group 1 (4) composed of a hole injection layer, a hole transport layer, etc.
- a light emitting layer (5) eg, composed of an electron transport layer, an electron injection layer, etc.
- the carrier transport functional layer group 2 (6) is laminated to form a light emitting region.
- a sealing substrate (10) having a cathode (7) as a second electrode, a sealing adhesive layer (8), and a gas barrier layer (9) is provided on the upper part.
- a non-light emitting intermediate layer may be provided between the light emitting layers.
- the intermediate layer may be a charge generation layer or a multi-photon unit configuration.
- tandem organic EL element can also be used.
- tandem type include, for example, US Pat. No. 6,337,492, US Pat. No. 7,420,203, US Pat. No. 7,473,923, US Pat. No. 6,872,472, US Pat. No. 6,107,734, US Pat. No. 6,337,492, International Publication No. 2005 / 009087, JP 2006-228712, JP 2006-24791, JP 2006-49393, JP 2006-49394, JP 2006-49396, JP 2011-96679. JP, JP 2005-340187, JP 4711424, JP 34966681, JP 3884564, Patent No.
- the transparent substrate (1) applicable to the organic EL element (OLED) is not particularly limited as long as it is a light-transmitting substrate, and examples thereof include glass and plastic.
- Examples of the light-transmitting substrate (1) applicable to the present invention include glass, quartz, and a resin substrate. More preferably, it is a flexible resin base material from the viewpoint of imparting flexibility to the organic EL element.
- polyesters such as polyethylene terephthalate (abbreviation: PET), polyethylene naphthalate (abbreviation: PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, and cellulose.
- Cellulose esters such as triacetate (abbreviation: TAC), cellulose acetate butyrate, cellulose acetate propionate (abbreviation: CAP), cellulose acetate phthalate, cellulose nitrate, and their derivatives, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol , Syndiotactic polystyrene, polycarbonate (abbreviation: PC), norbornene resin, polymethylpentene, polyetherketone, polyimide, Ether sulfone (abbreviation: PES), polyphenylene sulfide, polysulfones, polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic and polyarylates, Arton (trade name, manufactured by JSR) and Examples thereof include cycloolefin resins such as Apel (trade name, manufactured by Mitsui Chemicals).
- TAC triacetate
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PC polycarbonate
- a film is preferably used as a resin substrate having flexibility.
- the resin substrate may be an unstretched film or a stretched film.
- the resin base material applicable to the present invention can be manufactured by a conventionally known general film forming method.
- an unstretched resin base material that is substantially amorphous and not oriented can be produced by melting a resin as a material with an extruder, extruding it with an annular die or a T-die, and quenching.
- the unstretched resin base material is transported in the direction of the resin base material (vertical axis direction) by a known method such as uniaxial stretching, tenter sequential biaxial stretching, tenter simultaneous biaxial stretching, tubular simultaneous biaxial stretching, or the like.
- a stretched resin substrate can be produced by stretching in a direction perpendicular to the conveying direction of the resin substrate (horizontal axis direction, TD direction).
- the draw ratio in this case can be appropriately selected according to the resin as the raw material of the resin base material, but is preferably in the range of 2 to 10 times in each of the vertical axis direction and the horizontal axis direction.
- the thickness of the resin substrate is preferably a thin resin substrate in the range of 3 to 200 ⁇ m, more preferably in the range of 10 to 150 ⁇ m, and particularly preferably in the range of 20 to 120 ⁇ m. Is within.
- the anode constituting the organic EL element is preferably a light transmissive electrode.
- the anode is preferably composed of an oxide semiconductor or a metal or alloy of a thin film.
- Ag, Au, etc. A metal or an alloy containing a metal as a main component, CuI, indium-tin composite oxide (ITO), or an oxide semiconductor such as SnO 2 or ZnO can be given.
- a vacuum evaporation method for example, resistance heating evaporation method, electron beam evaporation method, ion plating method, ion beam evaporation method, etc.
- sputtering method reactive sputtering method
- molecular beam epitaxy method examples include plasma polymerization, atmospheric pressure plasma polymerization, plasma CVD, laser CVD, and thermal CVD.
- the purity of silver is preferably 99% or more. Further, palladium (Pd), copper (Cu), gold (Au), or the like may be added to ensure the stability of silver.
- the light-transmitting anode is a layer composed mainly of silver.
- the anode may be composed of silver alone or an alloy containing silver (Ag).
- alloys include silver-magnesium (Ag-Mg), silver-copper (Ag-Cu), silver-palladium (Ag-Pd), silver-palladium-copper (Ag-Pd-Cu), silver -Indium (Ag-In) and the like.
- an anode having a light transmission property composed mainly of silver and having a thickness in the range of 2 to 20 nm.
- the thickness is preferably in the range of 4 to 12 nm.
- a thickness of 20 nm or less is preferable because the absorption component and reflection component of the light-transmitting anode are kept low and high light transmittance is maintained.
- the layer composed mainly of silver in the present invention means that the silver content in the light-transmitting anode is 60% by mass or more, preferably the silver content is 80% by mass. More preferably, the silver content is 90% by mass or more, and particularly preferably the silver content is 98% by mass or more.
- “light transmittance” in the anode having light transmittance according to the present invention means that the light transmittance at a wavelength of 550 nm is 50% or more.
- the light-transmitting anode may have a structure in which a layer composed mainly of silver is divided into a plurality of layers as necessary.
- the lower portion is formed from the viewpoint of improving the uniformity of the silver film of the light-transmitting anode to be formed.
- the underlayer is not particularly limited as long as it can suppress the aggregation of silver when forming an anode made of silver or an alloy containing silver as a main component.
- an organic layer having a nitrogen atom or a sulfur atom A layer containing a compound is preferred, and a method of forming a light-transmitting anode on the underlayer is a preferred embodiment.
- Organic functional layer unit (Light emitting layer)
- a phosphorescent light emitting compound or a fluorescent compound can be used as the light emitting material.
- a phosphorescent light emitting compound is used as the light emitting material.
- the contained structure is preferable.
- This light emitting layer is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer and holes injected from the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. Alternatively, it may be the interface between the light emitting layer and the adjacent layer.
- Such a light emitting layer is not particularly limited in its configuration as long as the light emitting material contained satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer between the light emitting layers.
- the total thickness of the light emitting layers is preferably in the range of 1 to 100 nm, and more preferably in the range of 1 to 30 nm because a lower driving voltage can be obtained.
- the sum total of the thickness of a light emitting layer is the thickness also including the said intermediate
- the light emitting layer as described above is prepared by using a known method such as a vacuum evaporation method, a spin coating method, a casting method, an LB method (Langmuir-Blodget, Langmuir Blodgett method) and an ink jet method. Can be formed.
- a known method such as a vacuum evaporation method, a spin coating method, a casting method, an LB method (Langmuir-Blodget, Langmuir Blodgett method) and an ink jet method. Can be formed.
- a plurality of light emitting materials may be mixed, and a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) may be mixed and used in the same light emitting layer.
- the structure of the light-emitting layer preferably includes a host compound (also referred to as a light-emitting host) and a light-emitting material (also referred to as a light-emitting dopant compound), and emits light from the light-emitting material.
- ⁇ Host compound> As the host compound contained in the light emitting layer, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. Further, the phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.
- a known host compound may be used alone, or a plurality of types of host compounds may be used.
- a plurality of types of host compounds it is possible to adjust the movement of charges, and the efficiency of the organic electroluminescent device can be improved.
- a plurality of kinds of light emitting materials described later it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
- the host compound used in the light emitting layer may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). )
- Examples of host compounds applicable to the present invention include, for example, JP-A Nos. 2001-257076, 2001-357777, 2002-8860, 2002-43056, 2002-105445, 2002-352957, 2002-231453, 2002-234888, 2002-260861, 2002-305083, US Patent Application Publication No. 2005/0112407, US Patent Application Publication No. 2009/0030202, International Publication No. 2001/039234, International Publication No. 2008/056746, International Publication No. 2005/089025, International Publication No. 2007/063754, International Publication No. 2005/030900, International Publication 200th / No. 086,028, WO 2012/023947, can be mentioned JP 2007-254297, JP-European compounds described in Japanese Patent No. 2034538 Pat like.
- a phosphorescent compound also referred to as a phosphorescent compound, a phosphorescent material, or a phosphorescent dopant
- a fluorescent compound both a fluorescent compound or a fluorescent material
- a phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.), and the phosphorescence quantum yield is 0 at 25 ° C.
- a preferred phosphorescence quantum yield is 0.1 or more, although it is defined as 0.01 or more compounds.
- the phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7.
- the phosphorescence quantum yield in the solution can be measured using various solvents, but when using a phosphorescent compound in the present invention, the phosphorescence quantum yield is 0.01 or more in any solvent. Should be achieved.
- the phosphorescent compound can be appropriately selected from known compounds used for the light-emitting layer of a general organic EL device, but preferably contains a group 8 to 10 metal in the periodic table of elements. More preferred are iridium compounds, more preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds) or rare earth complexes, and most preferred are iridium compounds.
- At least one light emitting layer may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compound in the light emitting layer varies in the thickness direction of the light emitting layer. It may be an embodiment.
- preferred phosphorescent compounds include organometallic complexes having Ir as a central metal. More preferably, a complex containing at least one coordination mode of a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, and a metal-sulfur bond is preferable.
- the phosphorescent compound described above (also referred to as a phosphorescent metal complex) is described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, pp. 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, pages 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, pages 3055-3066 (2002) , New Journal of Chemistry. 26, 1171 (2002), European Journal of Organic Chemistry, Vol. 4, pages 695-709 (2004), and methods disclosed in the references and the like described in these documents Can be synthesized.
- Fluorescent compounds include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes. And dyes, polythiophene dyes, and rare earth complex phosphors.
- Carrier transport functional group Next, a charge injection layer, a hole transport layer, an electron transport layer, and a blocking layer will be described in this order as representative examples of the layers constituting the carrier transport functional layer group.
- the charge injection layer is a layer provided between the electrode and the light emitting layer in order to lower the driving voltage and improve the light emission luminance.
- the organic EL element and its industrialization front line June 30, 1998, NT. The details are described in Volume 2, Chapter 2, “Electrode Materials” (pages 123 to 166) of “Part 2” of S Co., Ltd., and there are a hole injection layer and an electron injection layer.
- the charge injection layer is present between the anode and the light emitting layer or the hole transport layer in the case of a hole injection layer, and between the cathode and the light emitting layer or the electron transport layer in the case of an electron injection layer.
- the present invention is characterized in that the charge injection layer is disposed adjacent to the light-transmitting electrode. When used in an intermediate electrode, it is sufficient that at least one of the adjacent electron injection layer and hole injection layer satisfies the requirements of the present invention.
- the hole injection layer is a layer disposed adjacent to the anode, which is a light-transmitting electrode, in order to lower the driving voltage and improve the light emission luminance.
- the details of the hole injection layer are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069, etc.
- materials used for the hole injection layer include: , Porphyrin derivatives, phthalocyanine derivatives, oxazole derivatives, oxadiazole derivatives, triazole derivatives, imidazole derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, hydrazone derivatives, stilbene derivatives, polyarylalkane derivatives, triarylamine derivatives, carbazole derivatives, Indolocarbazole derivatives, isoindole derivatives, acene derivatives such as anthracene and naphthalene, fluorene derivatives, fluorenone derivatives, polyvinylcarbazole, aromatic amines introduced into the main chain or side chain Child material or oligomer, polysilane, a conductive polymer or oligomer
- Examples of the triarylamine derivative include benzidine type represented by ⁇ -NPD (4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl), and MTDATA (4,4 ′, 4 ′′).
- Examples include a starburst type represented by -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine), a compound having fluorene or anthracene in the triarylamine-linked core.
- hexaazatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as a hole transport material.
- the electron injection layer is a layer provided between the cathode and the light emitting layer in order to lower the driving voltage and improve the light emission luminance.
- the cathode is composed of the light-transmitting electrode according to the present invention Is provided adjacent to the light-transmitting electrode, and “Organic EL element and its forefront of industrialization” (issued on November 30, 1998 by NTT)
- the electrode material “(pages 123 to 166) is described in detail.
- JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like Specific examples of materials preferably used for the electron injection layer are as follows. Metals represented by strontium and aluminum, alkali metal compounds represented by lithium fluoride, sodium fluoride, potassium fluoride, etc., alkali metal halide layers represented by magnesium fluoride, calcium fluoride, etc. Examples thereof include an alkaline earth metal compound layer typified by magnesium, a metal oxide typified by molybdenum oxide and aluminum oxide, and a metal complex typified by lithium 8-hydroxyquinolate (Liq).
- Metals represented by strontium and aluminum alkali metal compounds represented by lithium fluoride, sodium fluoride, potassium fluoride, etc.
- the electrode which has the light transmittance in this invention is a cathode
- organic materials such as a metal complex
- the electron injection layer is preferably a very thin film, and depending on the constituent material, the layer thickness is preferably in the range of 1 nm to 10 ⁇ m.
- the hole transport layer is made of a hole transport material having a function of transporting holes.
- the hole injection layer and the electron blocking layer also have the function of a hole transport layer.
- the hole transport layer can be provided as a single layer or a plurality of layers.
- the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, and thiophene oligomers.
- hole transport material those described above can be used, but porphyrin compounds, aromatic tertiary amine compounds and styrylamine compounds can be used, and in particular, aromatic tertiary amine compounds can be used. preferable.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl, N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 2,2-bis (4-di-p-tolylaminophenyl) propane, 1,1 -Bis (4-di-p-tolylaminophenyl) cyclohexane, N, N, N ', N'-tetra-p-tolyl-4,4'-diaminobiphenyl, 1,1-bis (4-di-p -Tolylaminophenyl) -4-phenylcyclohexane, bis (4-dimethylamino-2-methylphenyl) phenylmethane, bis (4-di-p
- the hole transport material may be formed by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, and an LB method (Langmuir Brodget, Langmuir Brodgett method). Thus, it can be formed by thinning.
- the layer thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer may have a single layer structure composed of one or more of the above materials.
- the p property can be increased by doping impurities into the material of the hole transport layer.
- Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175 and J.P. Appl. Phys. 95, 5773 (2004), and the like.
- the electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
- the electron transport layer can be provided as a single layer structure or a stacked structure of a plurality of layers.
- an electron transport material (also serving as a hole blocking material) constituting a layer portion adjacent to the light emitting layer is used as an electron transporting material. What is necessary is just to have the function to transmit.
- any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
- a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as a material for the electron transport layer. It can. Furthermore, a polymer material in which these materials are introduced into a polymer chain, or a polymer material having these materials as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (abbreviation: Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8- Quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (abbreviation: Znq), etc. and the central metal of these metal complexes
- a metal complex replaced with In, Mg, Cu, Ca, Sn, Ga, or Pb can also be used as a material for the electron transport layer.
- the electron transport layer can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, and an LB method.
- the thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer may have a single structure composed of one or more of the above materials.
- blocking layer examples include a hole blocking layer and an electron blocking layer.
- the blocking layer is a layer provided as necessary. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. Hole blocking (hole block) layer and the like.
- the hole blocking layer has a function of an electron transport layer in a broad sense.
- the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
- the structure of an electron carrying layer can be used as a hole-blocking layer as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer.
- the electron blocking layer has a function of a hole transport layer in a broad sense.
- the electron blocking layer is made of a material that has the ability to transport holes and has a very small ability to transport electrons. By blocking holes while transporting holes, the probability of recombination of electrons and holes is improved. Can be made.
- the structure of a positive hole transport layer can be used as an electron blocking layer as needed.
- the layer thickness of the hole blocking layer applied to the present invention is preferably in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.
- the cathode according to the present invention is a light-transmitting electrode that functions to supply holes to the carrier transporting functional layer group and the light-emitting layer, and is a metal, alloy, organic or inorganic conductive compound, or a mixture thereof.
- a metal, alloy, organic or inorganic conductive compound for example, gold, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO 2 and An oxide semiconductor such as SnO 2 can be given.
- the cathode can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the second electrode is several hundred ⁇ / sq.
- the film thickness is usually selected from the range of 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the gas barrier layer (2) may be not only an inorganic material film but also a film made of a composite material with an organic material or a hybrid film obtained by laminating these films.
- water vapor permeability (environmental conditions: 25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)%) in accordance with JIS (Japanese Industrial Standard) -K7129 (2008) About 0.01 g / m 2 ⁇ 24 h or less
- oxygen permeability according to JIS-K7126 (2006) is about 0.01 ml / m 2 ⁇ 24 h ⁇ atm] or less
- resistivity is 1 ⁇ 10 12 ⁇ ⁇ cm or more
- the light transmittance is preferably an insulating film having light permeability having gas barrier properties such that the light transmittance is about 80% or more in the visible light region.
- any material for forming the gas barrier layer (2) can be used as long as it can suppress the intrusion of a gas such as water or oxygen into the organic EL element, which causes deterioration of the organic EL element. .
- the main raw material is a silicon compound such as silicon nitride or silicon oxide.
- a conventionally known film forming method can be appropriately selected and used.
- a vacuum deposition method, a sputtering method, a magnetron sputtering method, a molecular beam epitaxy method, a cluster ion beam method, an ion plate method can be used.
- ⁇ Sealing material> In the organic EL panel (P) shown in FIG. 2, an example in which a sealing member is further formed on the organic EL panel (P) including the organic EL element (OLED) formed up to the cathode (7). Is shown.
- sealing adhesive (8) As shown in FIG. 2, after applying the sealing adhesive (8) to the entire surface of the organic EL element (OLED), it is sealed with a sealing member (10) having a gas barrier layer (9) on the outermost surface. I do.
- the sealing member may be disposed so as to cover the display area of the organic EL element, and may be concave or flat. Further, transparency and electrical insulation are not particularly limited.
- Specific examples include a flexible glass substrate, a resin substrate, a resin film, a metal film (metal foil), and the like.
- the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the resin substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- sealing adhesive polyurethane-based, polyester-based, epoxy-based, acrylic-based adhesives can be used. You may use a hardening
- a hot melt lamination method, an extrusion lamination method and a coextrusion lamination method can also be used, but a dry lamination method is preferred.
- the sealing member a resin substrate and a crow substrate can be preferably used from the viewpoint of reducing the thickness of the organic EL element.
- the resin substrate has a water vapor transmission rate of 1 ⁇ 10 ⁇ 3 g / m 2 .multidot.m at a temperature of 25 ⁇ 0.5 ° C. and a relative humidity of 90 ⁇ 2% RH measured by a method according to JIS K 7129-1992.
- the oxygen permeability measured by a method according to JIS K 7126-1987 is preferably 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm (1 atm is 1.01325 ⁇ 10 5 a Pa) equal to or lower than a temperature of 25 ⁇ 0.5 ° C.
- water vapor permeability at a relative humidity of 90 ⁇ 2% RH is preferably not more than 1 ⁇ 10 -3 g / m 2 ⁇ 24h.
- an inert gas such as nitrogen or argon, or an inert liquid such as fluorocarbon or silicon oil is injected in the gas phase and liquid phase.
- an inert gas such as nitrogen or argon, or an inert liquid such as fluorocarbon or silicon oil is injected in the gas phase and liquid phase.
- the gap between the sealing member and the display area of the organic EL element can be evacuated, or a hygroscopic compound can be sealed in the gap.
- the organic functional layer unit in the organic EL element is completely covered, and the anode (3) which is the first electrode and the cathode (7) which is the second electrode in the organic EL element are exposed, and the light is exposed.
- a sealing film can also be provided over a permeable substrate.
- the organic EL panel according to the present invention is characterized in that it is composed of a light emitting part region constituted by an organic EL element and a light-transmitting non-light emitting part region.
- FIG. 3 is a schematic cross-sectional view showing an example of the configuration of an organic EL panel (P) according to the present invention having an organic EL element (Embodiment 1).
- the organic EL panel (P) shown in FIG. 3 is the organic EL element described in FIG. 2 above, and the organic EL elements are arranged on the transparent base material (1) having light transparency, respectively, An independent light emitting area is formed.
- an organic EL element (OLED) composed of, for example, an anode (3), an organic functional layer unit (U), a cathode (7), and the like on a transparent substrate (1) having a gas barrier layer (2).
- OLED organic EL element
- a region where all of the anode (3), the organic functional layer unit (U) and the cathode (7) are present is a light emitting area, and a region between them is a light-transmitting non-light emitting portion ( 12).
- there is a finger on the lower surface side light (L1) is irradiated from the finger surface side having the anode (3), and the image sensor ( S) is arranged.
- the anode (3) is constituted by a light transmissive electrode and the cathode (7) is constituted by a non-light transmissive electrode. Both (3) and the cathode (7) can be formed of a light transmissive transparent electrode.
- the organic EL panel (P) having the configuration shown in FIG. 4 is another configuration example in which the cathode (7) is composed of a non-light-transmitting electrode, particularly the configuration described with reference to FIG.
- the image sensor (S) is not irradiated with illegal light that affects the measurement accuracy of the image sensor (S) from the cathode (7) surface side of the organic EL element. Can be arranged on the entire surface including the light emitting area.
- Emodiment 3 Method 3 for forming organic EL panel
- the organic EL panel (P) having the configuration shown in FIG. 5 is used to form the organic EL element
- the light-transmitting anode (3) is formed on the entire surface of the light emitting area and the non-light emitting portion (12), and the organic functional layer is formed.
- a method of forming a light emitting area with only the unit (U) and the cathode (7) is shown.
- the constituent condition of the light emitting area is a region where all of the anode (3), the organic functional layer unit (U), and the cathode (7) are on the same plane. As shown in FIG. ) Only functions as a non-light emitting part (12).
- the organic EL panel (P) having the configuration shown in FIG. 6 is formed by forming the anode (3) and the organic functional layer unit (U) on the entire surface of the light emitting area and the non-light emitting portion (12) when forming the organic EL element. Only the cathode (7) is shown as a method for forming a light emitting area.
- the constituent conditions of the light emitting area are the areas where the anode (3), the organic functional layer unit (U), and the cathode (7) all exist on the same plane. As shown in FIG. ) Does not exist, functions as a non-light emitting portion (12).
- Emodiment 5 Method 5 for forming organic EL panel
- the anode (3) and the organic functional layer unit (U) are formed only in the light emitting area as in FIG. (7) shows a method of forming the light emitting area and the entire non-light emitting portion (12).
- the cathode (7) is preferably light transmissive.
- the constituent condition of the light emitting area is a region where all of the anode (3), the organic functional layer unit (U), and the cathode (7) exist on the same plane. As shown in FIG. ) And the region where the organic functional layer unit (U) is not present functions as a non-light emitting portion (12).
- the method for forming the organic EL panel (P) shown in FIG. 8 is the non-light-emitting after forming the anode (3), the organic functional layer unit (U) and the cathode (7) on the entire surface of the transparent substrate (1 + 2).
- the region for forming the portion (12) is irradiated with ultraviolet (UV) light by the ultraviolet irradiation device (13) through the mask member (M) to deactivate the light emitting function of the organic functional layer unit.
- UV ultraviolet
- M mask member
- the light irradiation is performed after forming the organic functional layer unit (U), or the organic EL panel (P) which performed the sealing process is irradiated with light.
- Any of the methods of patterning the light emitting area may be used, but the latter method can perform light irradiation in a state where the sealed organic EL panel is exposed to the air atmosphere. This is preferable from the viewpoint of simplification and reduction in manufacturing cost.
- an anode (3), an organic functional layer unit (U) and a cathode (7) are formed on the entire surface of the transparent substrate (1), and then a sealing process is performed.
- an organic EL element is formed.
- the ultraviolet ray (UV) is irradiated from the ultraviolet ray irradiation device (13).
- the non-light emitting portion (U2) in which the function of the organic functional layer unit (U1) in the region irradiated with the ultraviolet rays (UV1) is deactivated is formed by the above ultraviolet irradiation treatment.
- the image sensor (S) is arranged on the non-light emitting portion (12, U2) to produce the fingerprint information reading portion (100).
- both the anode (3) and the cathode (7) are transparent. It is necessary to form with an electrode.
- the light to be irradiated contains at least ultraviolet light (UV), and may further have visible light or infrared light.
- the ultraviolet ray referred to in the present invention refers to an electromagnetic wave having a wavelength longer than that of X-rays and shorter than the shortest wavelength of visible light.
- the wavelength region is in the range of 1 to 400 nm, preferably As the wavelength of irradiation light to be applied, it is preferable to use irradiation light having a maximum wavelength at 355 nm, 365 nm, 380 nm, 405 nm, or the like.
- the irradiation light generating means and the irradiation means are not particularly limited as long as they can generate light using a conventionally known irradiation apparatus or the like and irradiate a predetermined region.
- the irradiation light source applicable to the present invention includes a high pressure mercury lamp, a low pressure mercury lamp, a hydrogen (deuterium) lamp, a rare gas (xenon, argon, helium, neon, etc.) discharge lamp, a nitrogen laser, an excimer laser (XeCl, XeF). , KrF, KrCl, etc.), hydrogen laser, halogen laser, harmonics of various visible (LD) -infrared lasers (THG (Third Harmonic Generation) light of YAG laser, etc.).
- a high pressure mercury lamp a low pressure mercury lamp
- a hydrogen (deuterium) lamp a rare gas (xenon, argon, helium, neon, etc.) discharge lamp
- a nitrogen laser an excimer laser (XeCl, XeF). , KrF, KrCl, etc.)
- hydrogen laser halogen laser
- the laser beam irradiation position is obtained by irradiating the organic functional layer unit (U) with a laser beam in a spot shape and relatively moving the laser light source and the organic functional layer unit (U). Can be used to irradiate the pattern region with light.
- FIG. 9 is a schematic configuration diagram (Embodiment 7) showing an example of a fingerprint information reading unit having an organic EL panel including a donut-shaped organic EL element.
- the schematic cross-sectional view described in FIG. 9A has the same configuration as the fingerprint information reading unit (100) that constitutes the optical fingerprint authentication apparatus described above with reference to FIG. 1, and is an organic EL element (OLED). And an organic EL panel (P) composed of a light-transmitting non-light-emitting portion (12) and an image for reading fingerprint information of the specimen by an optical method on the lower portion of the light-transmitting non-light-emitting portion (12) A sensor (S) is arranged.
- 11 is a glass substrate for holding a finger.
- the shape of the organic EL element (OLED) in the fingerprint information reading unit (100) having such a configuration as shown in FIG. 9B, a continuous donut is formed on the outer periphery of the elliptical organic EL panel (P).
- the organic EL element (OLED) is disposed and the central gap is formed as a non-light emitting part (12).
- a fingerprint pattern is formed. Can be measured by a wide opening.
- FIG. 9C is a bottom view of the configuration shown in FIG. 9A, with a doughnut-shaped organic EL element (OLED) and an image sensor (S) in a non-light emitting region for a finger (F) as a specimen. Is a configuration in which. In FIG. 9C, the description of the glass substrate (11) is omitted.
- OLED organic EL element
- S image sensor
- FIG. 10 is a schematic configuration diagram (Embodiment 8) showing an example of an optical fingerprint authentication device having an organic EL panel provided with a rectangular organic EL element.
- the schematic cross-sectional view shown by A in FIG. 10 is the same as the configuration described in A in FIG. 9, but as shown by B and C in FIG. 10, the organic EL panel (P) and the image sensor (S).
- the feature is that the shape is rectangular. In the optical fingerprint authentication apparatus having such a configuration, it is difficult to cover the entire fingerprint having a circular shape, but it is one of effective methods for detecting an important fingerprint central pattern.
- the organic EL panel (P) has a rectangular shape, and has a configuration in which an organic EL element (OLED) having a continuous configuration is disposed at an end thereof.
- a non-light emitting part (12) having an area is formed, and the image sensor (S) takes a rectangular shape in accordance with the form of the non-light emitting part (12) as shown in FIG. 10C.
- the description of the glass substrate (11) is omitted.
- the organic EL panel (P) has a specific shape, for example, a doughnut-shaped or rectangular organic EL element (OLED).
- (U) and the cathode (7) are, for example, vacuum deposition methods (for example, resistance heating vapor deposition method, electron beam vapor deposition method, ion plating method, ion beam vapor deposition method), sputtering method, reactive sputtering method, molecular beam It is formed using a mask member having a desired shape by a wet coating method such as an epitaxy method, a plasma polymerization method, an atmospheric pressure plasma polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, or a screen printing method. Can do.
- the function of the organic functional layer unit can be deactivated by ultraviolet irradiation to form an organic EL element having a desired shape.
- FIG. 11 is a schematic configuration diagram (Embodiment 9) showing an example of an optical fingerprint authentication device having an organic EL panel in which strip-shaped organic EL elements are arranged apart from each other on four sides.
- FIG. 12 is a schematic configuration diagram (Embodiment 10) showing an example of an optical fingerprint authentication device having a circular organic EL panel provided with a rectangular non-light emitting portion at the center.
- the organic EL panel (P) of Embodiment 10 has an outer periphery that is elliptical as in FIG. 9, but the non-light emitting portion (12) disposed in the center and the image sensor.
- An example in which (S) is a rectangle is shown.
- FIG. 12C the description of the glass substrate (11) is omitted.
- FIG. 13 is a schematic configuration diagram (embodiment 11) showing an example of an optical fingerprint authentication device having an organic EL panel in which a plurality of organic EL elements are arranged in parallel in a stripe shape.
- a plurality of organic EL elements (OLEDs) having different sizes are arranged in parallel in a stripe shape on an elliptical organic EL panel (P).
- OLEDs organic EL elements
- FIG. 13C the description of the glass substrate (11) is omitted.
- a space between each organic EL element (OLED) is a non-light emitting portion (12).
- a certain opening ratio (%) is preferably 50% or more, more preferably 60% or more, and particularly preferably 70% or more. As the aperture ratio increases, the total amount of light emitted by the organic EL element (OLED) decreases, and therefore it is preferable to apply an organic EL element (OLED) having a high light emission intensity.
- organic EL element having high light emission intensity
- OLED organic EL element having high light emission intensity
- an organic EL element having a tandem structure in which two or more organic functional layer units including a light emitting layer are stacked via an intermediate layer or an intermediate electrode can be exemplified.
- FIG. 14 is a schematic configuration diagram (Embodiment 12) showing an example of an optical fingerprint authentication device having an organic EL panel in which a plurality of organic EL elements are arranged apart from each other on the outer periphery.
- a plurality of rectangular organic EL elements are independently arranged on the outer periphery of an elliptical organic EL panel (P), and the organic EL elements (OLEDs)
- a non-light emitting portion (12) is formed between and in the center.
- FIG. 14C the description of the glass substrate (11) is omitted.
- Such a configuration is preferable in that a high aperture ratio can be obtained as compared with the striped configuration illustrated in FIG.
- Specific methods of fingerprint authentication using the optical fingerprint authentication device of the present invention include, for example, Japanese Patent Application Laid-Open Nos. 2003-256377, 2004-005619, 2004-246586, and 2005. -063246, JP-A-2005-118289, JP-A-2006-244224, JP-A-2007-289457, JP-A-2007-328511, JP-A-2008-009821, and JP-A-2008-171238.
- the methods described in Japanese Patent Laid-Open No. 2009-271825, Japanese Patent Laid-Open No. 2011-141880, and the like can be appropriately selected and applied.
- the optical fingerprint authentication device of the present invention is an optical fingerprint authentication device having a thin configuration and various illumination light sources according to the purpose.
- bank ATMs mobile phones, personal digital assistants, personal computers, etc. It can be suitably used for personal authentication using a fingerprint pattern.
Abstract
Description
前記光源として、有機エレクトロルミネッセンスパネルを有し、
当該有機エレクトロルミネッセンスパネルは、有機エレクトロルミネッセンス素子により構成される発光部領域と、光透過性の非発光部より構成され、
前記非発光部に隣接する位置に前記イメージセンサーが配置されている指紋情報読み取り部を具備したことを特徴とする光学式指紋認証装置。
本発明の光学式指紋認証装置は、主に光源とイメージセンサーを有し、光源として、有機EL素子により構成される発光部領域と、光透過性の非発光部より構成される有機ELパネルを有し、前記非発光部に隣接する位置に前記イメージセンサーが配置されている指紋情報読み取り部を具備していることを特徴とする。
次いで、本発明に係る有機ELパネルを構成する有機EL素子の基本的な構成について、図を交えて説明する。
はじめに、本発明に係る有機ELパネルを構成する有機EL素子の主要構成要素の詳細について説明する。
(ii)光透過性を有する陽極(3)/有機機能層ユニット(U)〔キャリア輸送機能層群1(4:正孔注入輸送層)/発光層(5)/キャリア輸送機能層群2(6:正孔阻止層/電子注入輸送層)〕/非光透過性を有する陰極(7)
(iii)光透過性を有する陽極(3)/有機機能層ユニット(U)〔キャリア輸送機能層群1(4:正孔注入輸送層/電子阻止層)/発光層(5)/キャリア輸送機能層群2(6:正孔阻止層/電子注入輸送層)〕/非光透過性を有する陰極(7)
(iv)光透過性を有する陽極(3)/有機機能層ユニット(U)〔キャリア輸送機能層群1(4:正孔注入層/正孔輸送層)/発光層(5)/キャリア輸送機能層群2(6:電子輸送層/電子注入層)〕/非光透過性を有する陰極(7)
(v)光透過性を有する陽極(3)/有機機能層ユニット(U)〔キャリア輸送機能層群1(4:正孔注入層/正孔輸送層)/発光層(5)/キャリア輸送機能層群2(6:正孔阻止層/電子輸送層/電子注入層)〕/非光透過性を有する陰極(7)
(vi)光透過性を有する陽極(3)/有機機能層ユニット(U)〔キャリア輸送機能層群1(4:正孔注入層/正孔輸送層/電子阻止層)/発光層(5)/キャリア輸送機能層群2(6:正孔阻止層/電子輸送層/電子注入層)〕/非光透過性を有する陰極(7)
上記(i)~(vi)で説明した構成では、陰極(7)を非光透過性として説明したが、必要に応じて、陽極と同様の光透過性の陰極とする構成であってもよい。
有機EL素子(OLED)に適用可能な透明基材(1)としては、光透過性を有する基材であれば特に制限はなく、例えば、ガラス、プラスチック等の種類を挙げることができる。
有機EL素子を構成する陽極としては光透過性の電極であることが好ましく、例えば、酸化物半導体又は薄膜の金属若しくは合金で構成されていることが好ましい形態であり、例えば、Ag、Au等の金属又は金属を主成分とする合金、CuI、あるいはインジウム・スズの複合酸化物(ITO)、SnO2やZnO等の酸化物半導体を挙げることができる。
(発光層)
有機EL素子(OLED)を構成する発光層(5)は、発光材料としてリン光発光化合物、あるいは蛍光性化合物を用いることができるが、本発明においては、特に、発光材料としてリン光発光化合物が含有されている構成が好ましい。
発光層に含有されるホスト化合物としては、室温(25℃)におけるリン光発光のリン光量子収率が0.1未満の化合物が好ましい。さらにリン光量子収率が0.01未満であることが好ましい。また、発光層に含有される化合物の中で、その層中での体積比が50%以上であることが好ましい。
本発明で用いることのできる発光材料としては、リン光発光性化合物(リン光性化合物、リン光発光材料又はリン光発光ドーパントともいう。)及び蛍光発光性化合物(蛍光性化合物又は蛍光発光材料ともいう。)が挙げられるが、特に、リン光発光性化合物を用いることが、高い発光効率を得ることができる観点から好ましい。
リン光発光性化合物とは、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
蛍光発光性化合物としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素又は希土類錯体系蛍光体等が挙げられる。
次いで、キャリア輸送機能層群を構成する各層の代表例として、電荷注入層、正孔輸送層、電子輸送層及び阻止層の順に説明する。
電荷注入層は、駆動電圧低下や発光輝度向上のために、電極と発光層の間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)にその詳細が記載されており、正孔注入層と電子注入層とがある。
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層及び電子阻止層も正孔輸送層の機能を有する。正孔輸送層は単層又は複数層設けることができる。
電子輸送層は、電子を輸送する機能を有する材料から構成され、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は、単層構造又は複数層の積層構造として設けることができる。
阻止層としては、正孔阻止層及び電子阻止層が挙げられ、上記説明したキャリア輸送機能層ユニット3の各構成層の他に、必要に応じて設けられる層である。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層等を挙げることができる。
本発明に係る陰極は、キャリア輸送機能層群や発光層に正孔を供給するために機能する光透過性を有する電極であり、金属、合金、有機又は無機の導電性化合物若しくはこれらの混合物として、例えば、金、アルミニウム、銀、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、インジウム、リチウム/アルミニウム混合物、希土類金属、ITO、ZnO、TiO2及びSnO2等の酸化物半導体などが挙げられる。
〈ガスバリアー層〉
透明基材(1)の片面又は両面、少なくとも陽極(第1電極)が形成される側の全面には、光透過性のあるガスバリアー層(2)を形成することにより、水分や酸素など、有機EL素子の構成材料に対し劣化をもたらす成分の侵入を抑制することができる。
〈封止材料〉
図2に示す有機ELパネル(P)では、陰極(7)まで形成した有機EL素子(OLED)を具備した有機ELパネル(P)に対し、更にその上部に封止部材を形成している一例を示してある。
次いで、本発明に係る有機ELパネルの具体的な構成について説明する。
図3は、有機EL素子を有する本発明に係る有機ELパネル(P)の構成の一例を示す概略断面図である(実施形態1)。
図4に示す構成の有機ELパネル(P)は、上記図3で説明した構成で、特に、陰極(7)を非光透過性の電極で構成した他の構成例であり、このような構成とした場合には、有機EL素子の陰極(7)面側からイメージセンサー(S)の測定精度に影響を与える不正な光がイメージセンサー側に照射されることがないため、イメージセンサー(S)を、発光エリアを含めた全面に配置させることができる。
図5で示す構成の有機ELパネル(P)は、有機EL素子を形成する際に、光透過性の陽極(3)を発光エリア及び非発光部(12)の全面に形成し、有機機能層ユニット(U)及び陰極(7)のみで発光エリアを形成する方法を示してある。
図6で示す構成の有機ELパネル(P)は、有機EL素子を形成する際に、陽極(3)及び有機機能層ユニット(U)を発光エリア及び非発光部(12)の全面に形成し、陰極(7)のみ発光アリアに形成する方法を示してある。
図7で示す構成の有機ELパネル(P)は、有機EL素子を形成する際に、陽極(3)及び有機機能層ユニット(U)を、図4と同様に発光エリアのみに形成し、陰極(7)を発光エリア及び非発光部(12)の全域に形成する方法を示している。この場合、非発光部(12)にも陰極(7)が存在しているため、陰極(7)は光透過性であることが好ましい。
図8に記載の有機ELパネル(P)の形成方法は、透明基材(1+2)の全面に、陽極(3)、有機機能層ユニット(U)及び陰極(7)を形成した後、非発光部(12)を形成するための領域に、マスク部材(M)を介して、紫外線照射装置(13)により紫外線(UV)の光照射を行って、有機機能層ユニットの発光機能を失活させることにより、有機機能層ユニットに非発光部(U2)を形成する方法を用いることもできる。
次いで、本発明に係る有機EL素子を具備した有機ELパネルを用いた光学式指紋認証装置を構成する指紋情報読み取り部の具体な構成について、図を交えて説明する。
図9は、ドーナツ状の有機EL素子を具備した有機ELパネルを有する指紋情報読み取り部の一例を示す概略構成図(実施形態7)である。
図10は、長方形型の有機EL素子を具備した有機ELパネルを有する光学式指紋認証装置の一例を示す概略構成図(実施形態8)である。
図11は、短冊状の有機EL素子を4辺に離間して配置した有機ELパネルを有する光学式指紋認証装置の一例を示す概略構成図(実施形態9)である。
図12は、中心に長方形の非発光部を設けた円形の有機ELパネルを有する光学式指紋認証装置の一例を示す概略構成図(実施形態10)である。
図13は、複数の有機EL素子をストライプ状に並列配置した有機ELパネルを有する光学式指紋認証装置の一例を示す概略構成図(実施形態11)である。
図14は、外周部に複数の有機EL素子を離間して配置した有機ELパネルを有する光学式指紋認証装置の一例を示す概略構成図(実施形態12)である。
本発明の光学式指紋認証装置を用いた指紋認証の具体的な方法としては、例えば、特開2003-256377号公報、特開2004-005619号公報、特開2004-246586号公報、特開2005-063246号公報、特開2005-118289号公報、特開2006-244224号公報、特開2007-289457号公報、特開2007-328511号公報、特開2008-009821号公報、特開2008-171238号公報、特開2009-271825号公報、特開2011-141880号公報等に記載の方法を適宜選択して適用することができる。
2、9 ガスバリアー層
3 陽極
3RM 陽極形成原料
4 キャリア輸送機能層群1
5 発光層
6 キャリア輸送機能層群2
7 陰極
8 封止用接着層
10 封止基板
11 ガラス基板
12 光透過領域、非発光部
13 紫外線照射装置
100 指紋情報読み取り部
F 指
L1 光、照射光
L2 反射光、光信号
M マスク
OLED 有機EL素子
P 有機ELパネル
S イメージセンサー
U 有機機能層ユニット
U2 非発光部(有機機能層ユニット)
UV 紫外線
Claims (11)
- 少なくとも光源とイメージセンサーを有し、拡散光を検出する光学式指紋認証装置であって、
前記光源として、有機エレクトロルミネッセンスパネルを有し、
当該有機エレクトロルミネッセンスパネルは、有機エレクトロルミネッセンス素子により構成される発光部領域と、光透過性の非発光部より構成され、
前記非発光部に隣接する位置に前記イメージセンサーが配置されている指紋情報読み取り部を具備したことを特徴とする光学式指紋認証装置。 - 前記有機エレクトロルミネッセンス素子が、一対の対向する電極間に有機機能層ユニットを有し、前記電極の一方が光透過性の電極であり、他方が非光透過性の電極であることを特徴とする請求項1に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンス素子が、一対の対向する電極間に有機機能層ユニットを有し、前記電極がいずれも光透過性の電極であることを特徴とする請求項1に記載の光学式指紋認証装置。
- 前記光透過性の電極が、酸化物半導体又は薄膜の金属若しくは合金で構成されていることを特徴とする請求項2または請求項3に記載の光学式指紋認証装置。
- 前記光透過性の非発光部が、光透過性の電極を有することを特徴とする請求項2から請求項4までのいずれか一項に記載の光学式指紋認証装置。
- 前記光透過性の非発光部が、前記光透過性の電極及び前記有機機能層ユニットを有することを特徴とする請求項2から請求項4までのいずれか一項に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンスパネルが、外周部領域に、連続した構成の有機エレクトロルミネッセンス素子が配置され、中央部が前記光透過性の非発光部であることを特徴とする請求項1から請求項6までのいずれか一項に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンスパネルが、複数の有機エレクトロルミネッセンス素子がストライプ状に並列配置され、前記ストライプ状の有機エレクトロルミネッセンス素子の間に、前記光透過性の非発光部が形成されていることを特徴とする請求項1から請求項6までのいずれか一項に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンスパネルが、外周部領域に、独立した複数の有機エレクトロルミネッセンス素子が離間して配置され、中央部が前記光透過性の非発光部であることを特徴とする請求項1から請求項6までのいずれか一項に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンスパネルが、可視光領域の波長の光を発光することを特徴とする請求項1から請求項9までのいずれか一項に記載の光学式指紋認証装置。
- 前記有機エレクトロルミネッセンスパネルが、赤外領域の波長の光を発光することを特徴とする請求項1から請求項9までのいずれか一項に記載の光学式指紋認証装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/060,532 US10853465B2 (en) | 2015-12-08 | 2016-09-01 | Optical fingerprint authentication device |
EP16872658.6A EP3389004A4 (en) | 2015-12-08 | 2016-09-01 | Optical fingerprint authentication device |
KR1020187014117A KR20180072752A (ko) | 2015-12-08 | 2016-09-01 | 광학식 지문 인증 장치 |
JP2017554937A JPWO2017098758A1 (ja) | 2015-12-08 | 2016-09-01 | 光学式指紋認証装置 |
CN201680071731.2A CN108369724A (zh) | 2015-12-08 | 2016-09-01 | 光学式指纹认证装置 |
US17/038,489 US11507649B2 (en) | 2015-12-08 | 2020-09-30 | Optical fingerprint authentication device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-239048 | 2015-12-08 | ||
JP2015239048 | 2015-12-08 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/060,532 A-371-Of-International US10853465B2 (en) | 2015-12-08 | 2016-09-01 | Optical fingerprint authentication device |
US17/038,489 Continuation US11507649B2 (en) | 2015-12-08 | 2020-09-30 | Optical fingerprint authentication device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017098758A1 true WO2017098758A1 (ja) | 2017-06-15 |
Family
ID=59013912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/075651 WO2017098758A1 (ja) | 2015-12-08 | 2016-09-01 | 光学式指紋認証装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10853465B2 (ja) |
EP (1) | EP3389004A4 (ja) |
JP (1) | JPWO2017098758A1 (ja) |
KR (1) | KR20180072752A (ja) |
CN (1) | CN108369724A (ja) |
WO (1) | WO2017098758A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020092080A (ja) * | 2018-10-08 | 2020-06-11 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 可視光センサが埋め込まれた有機発光ダイオードパネル及びこれを含む表示装置並びにこれを用いたユーザの生体認識方法 |
KR20200142313A (ko) * | 2019-06-12 | 2020-12-22 | 주식회사 엘엠에스 | 지문인식용 광학필름 |
US11288486B2 (en) | 2019-06-12 | 2022-03-29 | Lms Co., Ltd. | Fingerprint recognition optical film, and backlight unit and liquid crystal display device comprising the film optical |
US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3046275B1 (fr) * | 2015-12-23 | 2018-12-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'empreintes a eclairage oled |
CN109545837B (zh) * | 2018-12-17 | 2020-10-13 | 武汉华星光电半导体显示技术有限公司 | Amoled柔性显示装置 |
JP7256050B2 (ja) * | 2019-03-26 | 2023-04-11 | 浜松ホトニクス株式会社 | 有機エレクトロルミネッセンス素子及び測定装置 |
KR102293938B1 (ko) * | 2019-07-19 | 2021-08-26 | (주)파트론 | 지문인식 센서 패키지 |
JP2022175012A (ja) * | 2021-05-12 | 2022-11-25 | 株式会社ジャパンディスプレイ | 生体認証装置 |
CN114346239A (zh) * | 2021-11-30 | 2022-04-15 | 山东政法学院 | 一种用于潜指纹物理显现和质谱检测基质的双功能材料及其制备方法与应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093785A (ja) * | 1996-09-18 | 1998-04-10 | Nec Corp | 薄型光源を用いたイメージセンサ装置 |
JP2005110896A (ja) * | 2003-10-07 | 2005-04-28 | Canon Inc | 指センサ |
JP2009003821A (ja) * | 2007-06-25 | 2009-01-08 | Hitachi Ltd | 撮像装置及びこれを搭載した装置 |
WO2015141397A1 (ja) * | 2014-03-17 | 2015-09-24 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002072963A (ja) * | 2000-06-12 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 発光モジュールおよびその駆動方法並びに光センサ |
JP2003233805A (ja) | 2001-12-04 | 2003-08-22 | Canon Inc | 画像入力装置 |
JP3684233B2 (ja) | 2002-05-14 | 2005-08-17 | キヤノン株式会社 | 指紋入力装置及びその製造方法 |
JP2005038406A (ja) | 2003-06-27 | 2005-02-10 | Canon Inc | 指紋入力装置及びこれを用いた個人認証システム |
JP2005018595A (ja) | 2003-06-27 | 2005-01-20 | Canon Inc | 指紋入力装置及びこれを用いた個人認証システム |
JP2005118289A (ja) | 2003-10-16 | 2005-05-12 | Canon Inc | 指紋入力装置及び指紋認証装置 |
JP2007328511A (ja) | 2006-06-07 | 2007-12-20 | Nec Electronics Corp | 指紋入力装置およびその製造方法 |
SG177175A1 (en) * | 2007-08-01 | 2012-01-30 | Silverbrook Res Pty Ltd | Handheld printer |
EP2172977A1 (en) * | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
EP2365556B1 (en) * | 2010-03-08 | 2014-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
JP5712746B2 (ja) * | 2011-04-06 | 2015-05-07 | セイコーエプソン株式会社 | センシング装置および電子機器 |
KR20130049728A (ko) * | 2011-11-04 | 2013-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 모듈 및 발광 장치 |
JP6044239B2 (ja) * | 2012-10-01 | 2016-12-14 | セイコーエプソン株式会社 | 撮像装置および医療機器 |
KR20160071581A (ko) * | 2014-12-11 | 2016-06-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
US10181070B2 (en) * | 2015-02-02 | 2019-01-15 | Synaptics Incorporated | Low profile illumination in an optical fingerprint sensor |
US10176355B2 (en) * | 2015-12-03 | 2019-01-08 | Synaptics Incorporated | Optical sensor for integration in a display |
-
2016
- 2016-09-01 CN CN201680071731.2A patent/CN108369724A/zh active Pending
- 2016-09-01 US US16/060,532 patent/US10853465B2/en active Active
- 2016-09-01 EP EP16872658.6A patent/EP3389004A4/en not_active Withdrawn
- 2016-09-01 JP JP2017554937A patent/JPWO2017098758A1/ja active Pending
- 2016-09-01 WO PCT/JP2016/075651 patent/WO2017098758A1/ja active Application Filing
- 2016-09-01 KR KR1020187014117A patent/KR20180072752A/ko not_active Application Discontinuation
-
2020
- 2020-09-30 US US17/038,489 patent/US11507649B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093785A (ja) * | 1996-09-18 | 1998-04-10 | Nec Corp | 薄型光源を用いたイメージセンサ装置 |
JP2005110896A (ja) * | 2003-10-07 | 2005-04-28 | Canon Inc | 指センサ |
JP2009003821A (ja) * | 2007-06-25 | 2009-01-08 | Hitachi Ltd | 撮像装置及びこれを搭載した装置 |
WO2015141397A1 (ja) * | 2014-03-17 | 2015-09-24 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3389004A4 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
JP2020092080A (ja) * | 2018-10-08 | 2020-06-11 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 可視光センサが埋め込まれた有機発光ダイオードパネル及びこれを含む表示装置並びにこれを用いたユーザの生体認識方法 |
US11716892B2 (en) | 2018-10-08 | 2023-08-01 | Samsung Electronics Co., Ltd. | Visible light sensor embedded organic light emitting diode display panels and display devices including the same |
KR20200142313A (ko) * | 2019-06-12 | 2020-12-22 | 주식회사 엘엠에스 | 지문인식용 광학필름 |
KR102204164B1 (ko) | 2019-06-12 | 2021-01-18 | 주식회사 엘엠에스 | 지문인식용 광학필름 |
US11288486B2 (en) | 2019-06-12 | 2022-03-29 | Lms Co., Ltd. | Fingerprint recognition optical film, and backlight unit and liquid crystal display device comprising the film optical |
US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
Also Published As
Publication number | Publication date |
---|---|
KR20180072752A (ko) | 2018-06-29 |
CN108369724A (zh) | 2018-08-03 |
EP3389004A1 (en) | 2018-10-17 |
JPWO2017098758A1 (ja) | 2018-11-01 |
EP3389004A4 (en) | 2018-12-26 |
US10853465B2 (en) | 2020-12-01 |
US11507649B2 (en) | 2022-11-22 |
US20210011987A1 (en) | 2021-01-14 |
US20180357402A1 (en) | 2018-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11507649B2 (en) | Optical fingerprint authentication device | |
JP6477683B2 (ja) | 有機エレクトロルミネッセンスモジュール及びスマートデバイス | |
KR101828721B1 (ko) | 유기 일렉트로루미네센스 모듈, 스마트 디바이스 및 조명 장치 | |
WO2017126153A1 (ja) | 光学式指紋認証装置 | |
US9425439B2 (en) | Organic electroluminescent module and method of manufacturing the same | |
WO2017047134A1 (ja) | 有機エレクトロルミネッセンスモジュール、スマートデバイス及び照明装置 | |
WO2017056682A1 (ja) | 有機エレクトロルミネッセンスパネル | |
WO2017056684A1 (ja) | 有機エレクトロルミネッセンスパネル及びその製造方法 | |
JP2016091793A (ja) | 有機エレクトロルミネッセンスデバイス及びその製造方法 | |
KR20150133271A (ko) | 유기 일렉트로루미네센스 소자의 패턴 형성 방법 | |
US10186559B2 (en) | Organic electroluminescence module and information device | |
WO2017057023A1 (ja) | 有機エレクトロルミネッセンス素子 | |
JPWO2018168617A1 (ja) | 面発光装置 | |
WO2016072246A1 (ja) | 有機エレクトロルミネッセンス素子 | |
WO2016098397A1 (ja) | 電気接続部材、有機エレクトロルミネッセンスモジュール及び有機エレクトロルミネッセンスモジュールの製造方法 | |
JP6337897B2 (ja) | 有機エレクトロルミネッセンス素子の製造方法 | |
WO2018051617A1 (ja) | 有機エレクトロルミネッセンス素子 | |
JP6252590B2 (ja) | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法 | |
JP2004111324A (ja) | 発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16872658 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017554937 Country of ref document: JP Kind code of ref document: A Ref document number: 20187014117 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016872658 Country of ref document: EP |