WO2017096708A1 - In Cell触控显示面板 - Google Patents

In Cell触控显示面板 Download PDF

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Publication number
WO2017096708A1
WO2017096708A1 PCT/CN2016/072779 CN2016072779W WO2017096708A1 WO 2017096708 A1 WO2017096708 A1 WO 2017096708A1 CN 2016072779 W CN2016072779 W CN 2016072779W WO 2017096708 A1 WO2017096708 A1 WO 2017096708A1
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WO
WIPO (PCT)
Prior art keywords
layer
disposed
substrate
display panel
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/072779
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English (en)
French (fr)
Inventor
李亚锋
彭香艺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
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Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US14/912,601 priority Critical patent/US9921673B2/en
Publication of WO2017096708A1 publication Critical patent/WO2017096708A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an In Cell touch display panel.
  • touch display panels have been widely accepted and used by people, such as smart phones, tablets, etc., using touch display panels.
  • the touch display panel integrates the touch panel and the liquid crystal display panel by using the embedded touch technology, and the touch panel function is embedded in the liquid crystal display panel, so that the liquid crystal display panel has the functions of displaying and sensing the touch input at the same time.
  • the touch display panel can be divided into a touch cell covering the on cell (On Cell), a touch electrode embedded in the cell (In Cell), and an external type according to different structures.
  • the In Cell type has the advantages of low cost, ultra-thin, and narrow bezel. It is mainly used in high-end touch products and has evolved into the main development direction of the future touch technology.
  • the liquid crystal display panel is generally composed of a color filter substrate (CF Substrate), a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate), and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates.
  • the working principle is that the rotation of the liquid crystal molecules of the liquid crystal layer is controlled by applying a driving voltage on the two glass substrates, and the light of the backlight module is refracted to generate a picture.
  • LTPS Low Temperature Poly-silicon
  • a-Si amorphous silicon
  • the W/L the ratio of the channel width W to the channel length L
  • the aperture ratio corresponding to the pixel is relatively It is relatively high and has great market competitive advantages.
  • FIG. 1 is a schematic cross-sectional view of a conventional In Cell touch display panel including a TFT substrate 100, a CF substrate 200 disposed opposite the TFT substrate 100, and a TFT The liquid crystal layer 300 between the substrate 100 and the CF substrate 200.
  • the TFT substrate 100 includes a first substrate 110, a light shielding layer 120 disposed on the first substrate 110, and a first insulating layer 130 disposed on the first substrate 110 and the light shielding layer 120. a polysilicon layer 410 on an insulating layer 130, a second insulating layer 420 disposed on the first insulating layer 130 and the polysilicon layer 410, and a gate 430 disposed on the second insulating layer 420.
  • a second insulating layer 420 and a third insulating layer 440 on the gate 430 are disposed on the third insulating layer a source/drain 450 on the 440, a first planar layer 140 disposed on the third insulating layer 440 and the source/drain 450, and a common electrode 150 disposed on the first planar layer 140.
  • a second passivation layer 180 and a pixel electrode 190 disposed on the second passivation layer 180.
  • the TFT substrate 100 further includes a data line 510 disposed on the third insulating layer 440.
  • the light shielding layer 120 completely covers the polysilicon layer 410, the gate 430, the source/drain 450 in the horizontal direction, and partially covers the data line 510.
  • the first planarization layer 140, the first passivation layer 160, and the second passivation layer 180 are respectively provided with a first via 141, a second via 161, and a third through which are mutually penetrated.
  • the pixel electrode 190 is in contact with the source/drain 450 via the first via 141, the second via 161, and the third via 181.
  • An object of the present invention is to provide an In Cell touch display panel.
  • the pixel electrode of the TFT substrate has only a flat layer between the pixel and the source/drain, and the pixel electrode passes only a via and source/drain on the flat layer. Very close contact, simple structure, high pixel aperture ratio.
  • the present invention provides an In Cell touch display panel, comprising a TFT substrate, a CF substrate disposed opposite to the TFT substrate, and a liquid crystal layer between the TFT substrate and the CF substrate;
  • the TFT substrate includes a first substrate, a light shielding layer disposed on the first substrate, a first insulating layer disposed on the first substrate and the light shielding layer, and a TFT layer disposed on the first insulating layer a first planar layer disposed on the TFT layer, a pixel electrode disposed on the first planar layer, a first passivation layer disposed on the pixel electrode, and the first passivation layer a touch sensing electrode layer, a second passivation layer disposed on the first passivation layer and the touch sensing electrode layer, and a common electrode disposed on the second passivation layer;
  • a first via hole is disposed on the second passivation layer corresponding to the touch sensing electrode layer, and the common electrode is in contact with the touch sensing electrode layer via the first via hole;
  • the layer includes a source/drain, and a second via is disposed on the first planar layer corresponding to the source/drain.
  • the pixel electrode is in contact with the source/drain via the second via.
  • the TFT layer includes a polysilicon layer disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and the polysilicon layer, and a gate disposed on the second insulating layer a third insulating layer on the second insulating layer and the gate, and a source/drain provided on the third insulating layer.
  • the TFT layer further includes a data line disposed on the third insulating layer.
  • the light shielding layer completely covers the polysilicon layer, the gate, the source/drain, and partially covers the data line in a horizontal direction, and the light shielding layer is a metal material.
  • the first insulating layer, the second insulating layer, and the third insulating layer are a silicon nitride layer, a silicon oxide layer, or a composite layer of the two.
  • the material of the common electrode and the pixel electrode is indium tin oxide.
  • the CF substrate includes a second substrate, a black matrix disposed on the second substrate, a color resist layer disposed on the second substrate and the black matrix, and a second planar layer disposed on the color resist layer And a photoresist spacer disposed on the second planar layer.
  • the photoresist spacer includes a main photoresist spacer and a secondary photoresist spacer; the main photoresist spacer is in contact with the second passivation layer, and the auxiliary photoresist spacer and the common electrode There is a gap between them.
  • the first substrate and the second substrate are glass substrates.
  • the color resist layer includes a red color resist layer, a green color resist layer, and a blue color resist layer.
  • the present invention further provides an In Cell touch display panel, comprising a TFT substrate, a CF substrate disposed opposite to the TFT substrate, and a liquid crystal layer between the TFT substrate and the CF substrate;
  • the TFT substrate includes a first substrate, a light shielding layer disposed on the first substrate, a first insulating layer disposed on the first substrate and the light shielding layer, and a TFT layer disposed on the first insulating layer a first planar layer disposed on the TFT layer, a pixel electrode disposed on the first planar layer, a first passivation layer disposed on the pixel electrode, and the first passivation layer a touch sensing electrode layer, a second passivation layer disposed on the first passivation layer and the touch sensing electrode layer, and a common electrode disposed on the second passivation layer;
  • a first via hole is disposed on the second passivation layer corresponding to the touch sensing electrode layer, and the common electrode is in contact with the touch sensing electrode layer via the first via hole;
  • the layer includes a source/drain, and a second via is disposed on the first planar layer corresponding to the source/drain, and the pixel electrode contacts the source/drain via the second via ;
  • the TFT layer includes a polysilicon layer disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and the polysilicon layer, and a gate disposed on the second insulating layer a third insulating layer disposed on the second insulating layer and the gate, and a source/drain provided on the third insulating layer;
  • the material of the common electrode and the pixel electrode is indium tin oxide
  • the CF substrate includes a second substrate, a black matrix disposed on the second substrate, a color resist layer disposed on the second substrate and the black matrix, and a second layer disposed on the color resist layer a flat layer and a photoresist spacer disposed on the second flat layer.
  • the present invention has an advantageous effect: the In Cell touch display panel of the present invention, the first flat layer on one side of the TFT substrate is provided with a pixel electrode, and the first flat layer and the pixel electrode are provided with a first passivation layer.
  • a touch-sensing electrode layer is disposed on the first passivation layer
  • a second passivation layer is disposed on the first passivation layer and the touch sensing electrode layer
  • a common electrode is disposed on the second passivation layer;
  • the common electrode is in contact with the touch sensing electrode layer via the first via hole on the second passivation layer; there is only a first flat layer between the pixel electrode and the source/drain, and the pixel electrode passes through the second pass on the first flat layer
  • the hole is in contact with the source/drain.
  • FIG. 1 is a cross-sectional view of a conventional In Cell touch display panel at a contact hole between a pixel electrode and a source/drain;
  • FIG. 2 is a cross-sectional view of the In Cell touch display panel of FIG. 1 at a data line;
  • FIG. 3 is a cross-sectional view showing a TFT substrate of the In Cell touch display panel of FIG. 1 at a contact hole between a pixel electrode and a source/drain;
  • FIG. 4 is a cross-sectional view of the In Cell touch display panel of the present invention at a contact hole between a pixel electrode and a source/drain;
  • FIG. 5 is a cross-sectional view of the In Cell touch display panel of the present invention at a data line;
  • FIG. 6 is a cross-sectional view showing a TFT substrate of an In Cell touch display panel of the present invention at a contact hole between a pixel electrode and a source/drain.
  • the present invention provides an In Cell touch display panel, including a TFT substrate 1 , a CF substrate 2 disposed opposite to the TFT substrate 1 , and a TFT substrate 1 and a CF substrate 2 .
  • the liquid crystal layer 3 between.
  • the TFT substrate 1 includes a first substrate 11 , a light shielding layer 12 disposed on the first substrate 11 , a first insulating layer 13 disposed on the first substrate 11 and the light shielding layer 12 , and the first substrate a TFT layer 4 on an insulating layer 13, a first flat layer 14 provided on the TFT layer 4, a pixel electrode 15 provided on the first flat layer 14, and a first electrode layer 15 provided on the pixel electrode 15.
  • a first via hole 181 is disposed on the second passivation layer 18 corresponding to the touch sensing electrode layer 17 , and the common electrode 19 passes through the first via hole 181 and the touch sensing electrode layer 17 .
  • the TFT layer 4 includes a source/drain 45, and a second via 141 is disposed on the first planar layer 14 corresponding to the source/drain 45, and the pixel electrode 15 is via the first The second via 141 is in contact with the source/drain 45.
  • the pixel electrode 15 Since there is only the first flat layer 14 between the pixel electrode 15 and the source/drain 45, the pixel electrode 15 is in contact with the source/drain 45 via the second via 141 on the first planar layer 14, compared with the prior art. Between the pixel electrode 15 and the source/drain 45, not only the thickness of the two passivation layers is reduced, but also the first passivation layer 16 and the first planarization layer 14, the second passivation layer 18 and the first planar layer are avoided. The adverse effect between the 14 holes due to the cross-digging, the relative relationship between the first flat layer 14 and the first passivation layer 16 and the second passivation layer 18 may not be considered in design, and the opening of the pixel is greatly improved. At the same time, because the number of vias is small and the structure is relatively simple, the difficulty of the process is reduced, thereby improving the yield of the product.
  • the TFT layer 4 includes a polysilicon layer 41 disposed on the first insulating layer 13 and a second insulating layer 42 disposed on the first insulating layer 13 and the polysilicon layer 41. a gate electrode 43 on the second insulating layer 42, a third insulating layer 44 disposed on the second insulating layer 42 and the gate electrode 43, and a source/drain 45 provided on the third insulating layer 44.
  • the TFT layer 4 further includes a data line 51 provided on the third insulating layer 44.
  • the light shielding layer 12 completely covers the polysilicon layer 41, the gate electrode 43, the source/drain 45 in the horizontal direction, and partially covers the data line 51.
  • the light shielding layer 12 is a metal material.
  • the first insulating layer 13, the second insulating layer 42, and the third insulating layer 44 are a composite layer of a silicon nitride (SiN x ) layer, a silicon oxide (SiO x ) layer, or both.
  • the material of the common electrode 19 and the pixel electrode 15 is indium tin oxide (ITO).
  • the CF substrate 2 includes a second substrate 21, a black matrix 22 disposed on the second substrate 21, and a color resist layer 23 disposed on the second substrate 21 and the black matrix 22.
  • a second flat layer 24 on the color resist layer 23 and a photoresist spacer 25 provided on the second flat layer 24 are described.
  • the photoresist spacer 25 includes a main photoresist spacer 251 and a secondary photoresist spacer 252; the main photoresist spacer 251 is in contact with the second passivation layer 18, and the auxiliary light There is a gap between the barrier spacer 252 and the common electrode 19.
  • the first substrate 11 and the second substrate 12 are glass substrates.
  • the color resist layer 34 includes a red color resist layer, a green color resist layer, and a blue color resist layer.
  • the first flat layer on one side of the TFT substrate is provided with a pixel electrode, and the first flat layer and the pixel electrode are provided with a first passivation layer.
  • a touch-sensing electrode layer is disposed on the first passivation layer
  • a second passivation layer is disposed on the first passivation layer and the touch sensing electrode layer
  • a common electrode is disposed on the second passivation layer;
  • the electrode is in contact with the touch sensing electrode layer via the first via on the second passivation layer; there is only a first planar layer between the pixel electrode and the source/drain, and the pixel electrode passes through the second via on the first planar layer
  • the first passivation layer and the first planar layer are avoided.
  • the adverse effect between the two passivation layers and the first flat layer due to the overlapping of the via holes may not be considered in design, and the relative relationship between the first flat layer and the first passivation layer and the second passivation layer may not be considered. And greatly improve the aperture ratio of the pixel; at the same time, because the number of vias is small, the structure is relatively simple, Reducing the difficulty of the process, thereby improving the product yield.

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Abstract

一种In Cell触控显示面板，TFT基板(1)一侧的像素电极(15)与源/漏极(45)之间只有第一平坦层(14)，像素电极(15)经由第一平坦层(14)上的第二过孔(141)与源/漏极(45)相接触。像素电极(15)与源/漏极(45)之间少了两层钝化层的厚度，避免了第一钝化层(16)与第一平坦层(14)、第二钝化层(18)与第一平坦层(14)之间因各过孔相互交叠而产生的不良影响，提高了像素的开口率；同时由于过孔的数量较少，因而降低了制程的难度，提高了产品良率。

Description

In Cell触控显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种In Cell触控显示面板。
背景技术
随着显示技术的飞速发展，触控显示面板已经广泛地被人们所接受及使用，如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体，并将触控面板功能嵌入到液晶显示面板内，使得液晶显示面板同时具备显示和感知触控输入的功能。触控显示面板根据结构不同可划分为触控电极覆盖于液晶盒上式(On Cell)、触控电极内嵌在液晶盒内式(In Cell)、以及外挂式。其中，In Cell式具有成本低、超薄、和窄边框的优点，主要应用在高端触控产品中，已演化为未来触控技术的主要发展方向。
液晶显示面板通常是由一彩膜基板(Color Filter Substrate，CF Substrate)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
低温多晶硅(Low Temperature Poly-silicon，LTPS)技术是新一代TFT基板的制造技术，与传统非晶硅(a-Si)技术的最大差异在于，低温多晶硅显示器反应速度较快，且有高亮度、高解析度与低耗电量等优点。由于LTPS具有高迁移率的优点，那么在进行像素设计时TFT基板开关的W/L(沟道宽度W与沟道长度L之比)就可以设计的很小，这样以来像素对应的开口率相对就比较高，具有极大的市场竞争优势。
请参阅图1，为一种现有In Cell触控显示面板的剖面示意图，所述InCell触控显示面板包括TFT基板100、与所述TFT基板100相对设置的CF基板200、及位于所述TFT基板100与CF基板200之间的液晶层300。
所述TFT基板100包括第一基板110、设于所述第一基板110上的遮光层120、设于所述第一基板110与遮光层120上的第一绝缘层130、设于所述第一绝缘层130上的多晶硅层410、设于所述第一绝缘层130与多晶硅层410上的第二绝缘层420、设于所述第二绝缘层420上的栅极430、设于所述第二绝缘层420与栅极430上的第三绝缘层440、设于所述第三绝缘层 440上的源/漏极450、设于所述第三绝缘层440与源/漏极450上的第一平坦层140、设于所述第一平坦层140上的公共电极150、设于所述公共电极150上的第一钝化层160、设于所述第一钝化层160上的触控感应电极层170、设于所述第一钝化层160与触控感应电极层170上的第二钝化层180、及设于所述第二钝化层180上的像素电极190。
如图2所述，所述TFT基板100还包括设于所述第三绝缘层440上的数据线510。所述遮光层120在水平方向上完全遮盖所述多晶硅层410、栅极430、源/漏极450，并部分遮盖所述数据线510。
如图3所示，所述第一平坦层140、第一钝化层160、第二钝化层180上分别设有相互贯通的第一过孔141、第二过孔161、及第三过孔181，所述像素电极190经由所述第一过孔141、第二过孔161、及第三过孔181与所述源/漏极450相接触。
为使像素电极190与源/漏极450连接在一起，需要在沉积像素电极190前，依次在所述第一平坦层140、第一钝化层160、及第二钝化层180上进行三道挖孔制程，这就使得设计时必须考虑各层孔之间的线宽(CD)变化及相互交叠(overlay)产生的影响，从而限制了开口率的提升，而且挖孔在制程中工艺最复杂，这大大提高了生产难度，影响产品良率。
发明内容
本发明的目的在于提供一种In Cell触控显示面板，TFT基板的像素电极与源/漏极之间只有一层平坦层，且像素电极仅经由该平坦层上的一个过孔与源/漏极相接触，结构简单，具有较高的像素开口率。
为实现上述目的，本发明提供一种In Cell触控显示面板，包括TFT基板、与所述TFT基板相对设置的CF基板、及位于所述TFT基板与CF基板之间的液晶层；
所述TFT基板包括第一基板、设于所述第一基板上的遮光层、设于所述第一基板与遮光层上的第一绝缘层、设于所述第一绝缘层上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的像素电极、设于所述像素电极上的第一钝化层、设于所述第一钝化层上的触控感应电极层、设于所述第一钝化层与触控感应电极层上的第二钝化层、及设于所述第二钝化层上的公共电极；
所述第二钝化层上对应所述触控感应电极层的上方设有第一过孔，所述公共电极经由所述第一过孔与所述触控感应电极层相接触；所述TFT层包括源/漏极，所述第一平坦层上对应所述源/漏极的上方设有第二过孔，所 述像素电极经由所述第二过孔与所述源/漏极相接触。
所述TFT层包括设于所述第一绝缘层上的多晶硅层、设于所述第一绝缘层与多晶硅层上的第二绝缘层、设于所述第二绝缘层上的栅极、设于所述第二绝缘层与栅极上的第三绝缘层、及设于所述第三绝缘层上的源/漏极。
所述TFT层还包括设于所述第三绝缘层上的数据线。
所述遮光层在水平方向上完全遮盖所述多晶硅层、栅极、源/漏极，并部分遮盖所述数据线，所述遮光层为金属材料。
所述第一绝缘层、第二绝缘层、第三绝缘层为氮化硅层、氧化硅层、或二者的复合层。
所述公共电极、像素电极的材料为氧化铟锡。
所述CF基板包括第二基板、设于所述第二基板上的黑色矩阵、设于所述第二基板与黑色矩阵上的色阻层、设于所述色阻层上的第二平坦层、及设于所述第二平坦层上的光阻间隔物。
所述光阻间隔物包括主光阻间隔物、及辅光阻间隔物；所述主光阻间隔物与所述第二钝化层相接触，所述辅光阻间隔物与所述公共电极之间有间隙。
所述第一基板、第二基板为玻璃基板。
所述色阻层包括红色色阻层、绿色色阻层、及蓝色色阻层。
本发明还提供一种In Cell触控显示面板，包括TFT基板、与所述TFT基板相对设置的CF基板、及位于所述TFT基板与CF基板之间的液晶层；
所述TFT基板包括第一基板、设于所述第一基板上的遮光层、设于所述第一基板与遮光层上的第一绝缘层、设于所述第一绝缘层上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的像素电极、设于所述像素电极上的第一钝化层、设于所述第一钝化层上的触控感应电极层、设于所述第一钝化层与触控感应电极层上的第二钝化层、及设于所述第二钝化层上的公共电极；
所述第二钝化层上对应所述触控感应电极层的上方设有第一过孔，所述公共电极经由所述第一过孔与所述触控感应电极层相接触；所述TFT层包括源/漏极，所述第一平坦层上对应所述源/漏极的上方设有第二过孔，所述像素电极经由所述第二过孔与所述源/漏极相接触；
其中，所述TFT层包括设于所述第一绝缘层上的多晶硅层、设于所述第一绝缘层与多晶硅层上的第二绝缘层、设于所述第二绝缘层上的栅极、设于所述第二绝缘层与栅极上的第三绝缘层、及设于所述第三绝缘层上的源/漏极；
其中，所述公共电极、像素电极的材料为氧化铟锡；
其中，所述CF基板包括第二基板、设于所述第二基板上的黑色矩阵、设于所述第二基板与黑色矩阵上的色阻层、设于所述色阻层上的第二平坦层、及设于所述第二平坦层上的光阻间隔物。
本发明的有益效果：本发明的In Cell触控显示面板，TFT基板一侧的第一平坦层上设有像素电极，所述第一平坦层与像素电极上设有第一钝化层，所述第一钝化层上设有触控感应电极层，所述第一钝化层与触控感应电极层上设有第二钝化层，所述第二钝化层上设有公共电极；公共电极经由第二钝化层上的第一过孔与触控感应电极层相接触；像素电极与源/漏极之间只有第一平坦层，像素电极经由第一平坦层上的第二过孔与源/漏极相接触，和现有技术相比，像素电极与源/漏极之间不仅少了两层钝化层的厚度，更避免了第一钝化层与第一平坦层、第二钝化层与第一平坦层之间因各过孔相互交叠而产生的不良影响，设计时可以不必考虑第一平坦层与第一钝化层和第二钝化层之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的In Cell触控显示面板在像素电极与源/漏极的接触孔处的剖面示意图；
图2为图1的In Cell触控显示面板在数据线处的剖面示意图；
图3为图1的In Cell触控显示面板的TFT基板在像素电极与源/漏极的接触孔处的剖面示意图；
图4为本发明的In Cell触控显示面板在像素电极与源/漏极的接触孔处的剖面示意图；
图5为本发明的In Cell触控显示面板在数据线处的剖面示意图；
图6为本发明的In Cell触控显示面板的TFT基板在像素电极与源/漏极的接触孔处的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4至图6，本发明提供一种In Cell触控显示面板，包括TFT基板1、与所述TFT基板1相对设置的CF基板2、及位于所述TFT基板1与CF基板2之间的液晶层3。
所述TFT基板1包括第一基板11、设于所述第一基板11上的遮光层12、设于所述第一基板11与遮光层12上的第一绝缘层13、设于所述第一绝缘层13上的TFT层4、设于所述TFT层4上的第一平坦层14、设于所述第一平坦层14上的像素电极15、设于所述像素电极15上的第一钝化层16、设于所述第一钝化层16上的触控感应电极层17、设于所述第一钝化层16与触控感应电极层17上的第二钝化层18、及设于所述第二钝化层18上的公共电极19；
所述第二钝化层18上对应所述触控感应电极层17的上方设有第一过孔181，所述公共电极19经由所述第一过孔181与所述触控感应电极层17相接触；所述TFT层4包括源/漏极45，所述第一平坦层14上对应所述源/漏极45的上方设有第二过孔141，所述像素电极15经由所述第二过孔141与所述源/漏极45相接触。
由于像素电极15与源/漏极45之间只有第一平坦层14，像素电极15经由第一平坦层14上的第二过孔141与源/漏极45相接触，和现有技术相比，像素电极15与源/漏极45之间不仅少了两层钝化层的厚度，更避免了第一钝化层16与第一平坦层14、第二钝化层18与第一平坦层14之间因交叉挖孔而产生的不良影响，设计时可以不必考虑第一平坦层14与第一钝化层16和第二钝化层18之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
具体地，所述TFT层4包括设于所述第一绝缘层13上的多晶硅层41、设于所述第一绝缘层13与多晶硅层41上的第二绝缘层42、设于所述第二绝缘层42上的栅极43、设于所述第二绝缘层42与栅极43上的第三绝缘层44、及设于所述第三绝缘层44上的源/漏极45。
如图5所示，所述TFT层4还包括设于所述第三绝缘层44上的数据线51。
具体地，所述遮光层12在水平方向上完全遮盖所述多晶硅层41、栅极43、源/漏极45，并部分遮盖所述数据线51。具体地，所述遮光层12为金属材料。
具体地，所述第一绝缘层13、第二绝缘层42、第三绝缘层44为氮化硅(SiNx)层、氧化硅(SiOx)层、或二者的复合层。
具体地，所述公共电极19、像素电极15的材料为氧化铟锡(ITO)。
具体地，所述CF基板2包括第二基板21、设于所述第二基板21上的黑色矩阵22、设于所述第二基板21与黑色矩阵22上的色阻层23、设于所述色阻层23上的第二平坦层24、及设于所述第二平坦层24上的光阻间隔物25。
具体地，所述光阻间隔物25包括主光阻间隔物251、及辅光阻间隔物252；所述主光阻间隔物251与所述第二钝化层18相接触，所述辅光阻间隔物252与所述公共电极19之间有间隙。
具体地，所述第一基板11、第二基板12为玻璃基板。
具体地，所述色阻层34包括红色色阻层、绿色色阻层、及蓝色色阻层。
综上所述，本发明的In Cell触控显示面板，TFT基板一侧的第一平坦层上设有像素电极，所述第一平坦层与像素电极上设有第一钝化层，所述第一钝化层上设有触控感应电极层，所述第一钝化层与触控感应电极层上设有第二钝化层，所述第二钝化层上设有公共电极；公共电极经由第二钝化层上的第一过孔与触控感应电极层相接触；像素电极与源/漏极之间只有第一平坦层，像素电极经由第一平坦层上的第二过孔与源/漏极相接触，和现有技术相比，像素电极与源/漏极之间不仅少了两层钝化层的厚度，更避免了第一钝化层与第一平坦层、第二钝化层与第一平坦层之间因各过孔相互交叠而产生的不良影响，设计时可以不必考虑第一平坦层与第一钝化层和第二钝化层之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (17)

  1. 一种In Cell触控显示面板，包括TFT基板、与所述TFT基板相对设置的CF基板、及位于所述TFT基板与CF基板之间的液晶层；
    所述TFT基板包括第一基板、设于所述第一基板上的遮光层、设于所述第一基板与遮光层上的第一绝缘层、设于所述第一绝缘层上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的像素电极、设于所述像素电极上的第一钝化层、设于所述第一钝化层上的触控感应电极层、设于所述第一钝化层与触控感应电极层上的第二钝化层、及设于所述第二钝化层上的公共电极；
    所述第二钝化层上对应所述触控感应电极层的上方设有第一过孔，所述公共电极经由所述第一过孔与所述触控感应电极层相接触；所述TFT层包括源/漏极，所述第一平坦层上对应所述源/漏极的上方设有第二过孔，所述像素电极经由所述第二过孔与所述源/漏极相接触。
  2. 如权利要求1所述的In Cell触控显示面板，其中，所述TFT层包括设于所述第一绝缘层上的多晶硅层、设于所述第一绝缘层与多晶硅层上的第二绝缘层、设于所述第二绝缘层上的栅极、设于所述第二绝缘层与栅极上的第三绝缘层、及设于所述第三绝缘层上的源/漏极。
  3. 如权利要求2所述的In Cell触控显示面板，其中，所述TFT层还包括设于所述第三绝缘层上的数据线。
  4. 如权利要求3所述的In Cell触控显示面板，其中，所述遮光层在水平方向上完全遮盖所述多晶硅层、栅极、源/漏极，并部分遮盖所述数据线；所述遮光层为金属材料。
  5. 如权利要求2所述的In Cell触控显示面板，其中，所述第一绝缘层、第二绝缘层、第三绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  6. 如权利要求1所述的In Cell触控显示面板，其中，所述公共电极、像素电极的材料为氧化铟锡。
  7. 如权利要求1所述的In Cell触控显示面板，其中，所述CF基板包括第二基板、设于所述第二基板上的黑色矩阵、设于所述第二基板与黑色矩阵上的色阻层、设于所述色阻层上的第二平坦层、及设于所述第二平坦层上的光阻间隔物。
  8. 如权利要求7所述的In Cell触控显示面板，其中，所述光阻间隔物包括主光阻间隔物、及辅光阻间隔物；所述主光阻间隔物与所述第二钝 化层相接触，所述辅光阻间隔物与所述公共电极之间有间隙。
  9. 如权利要求7所述的In Cell触控显示面板，其中，所述第一基板、第二基板为玻璃基板。
  10. 如权利要求7所述的In Cell触控显示面板，其中，所述色阻层包括红色色阻层、绿色色阻层、及蓝色色阻层。
  11. 一种In Cell触控显示面板，包括TFT基板、与所述TFT基板相对设置的CF基板、及位于所述TFT基板与CF基板之间的液晶层；
    所述TFT基板包括第一基板、设于所述第一基板上的遮光层、设于所述第一基板与遮光层上的第一绝缘层、设于所述第一绝缘层上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的像素电极、设于所述像素电极上的第一钝化层、设于所述第一钝化层上的触控感应电极层、设于所述第一钝化层与触控感应电极层上的第二钝化层、及设于所述第二钝化层上的公共电极；
    所述第二钝化层上对应所述触控感应电极层的上方设有第一过孔，所述公共电极经由所述第一过孔与所述触控感应电极层相接触；所述TFT层包括源/漏极，所述第一平坦层上对应所述源/漏极的上方设有第二过孔，所述像素电极经由所述第二过孔与所述源/漏极相接触；
    其中，所述TFT层包括设于所述第一绝缘层上的多晶硅层、设于所述第一绝缘层与多晶硅层上的第二绝缘层、设于所述第二绝缘层上的栅极、设于所述第二绝缘层与栅极上的第三绝缘层、及设于所述第三绝缘层上的源/漏极；
    其中，所述公共电极、像素电极的材料为氧化铟锡；
    其中，所述CF基板包括第二基板、设于所述第二基板上的黑色矩阵、设于所述第二基板与黑色矩阵上的色阻层、设于所述色阻层上的第二平坦层、及设于所述第二平坦层上的光阻间隔物。
  12. 如权利要求11所述的In Cell触控显示面板，其中，所述TFT层还包括设于所述第三绝缘层上的数据线。
  13. 如权利要求12所述的In Cell触控显示面板，其中，所述遮光层在水平方向上完全遮盖所述多晶硅层、栅极、源/漏极，并部分遮盖所述数据线；所述遮光层为金属材料。
  14. 如权利要求11所述的In Cell触控显示面板，其中，所述第一绝缘层、第二绝缘层、第三绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  15. 如权利要求11所述的In Cell触控显示面板，其中，所述光阻间隔物包括主光阻间隔物、及辅光阻间隔物；所述主光阻间隔物与所述第二 钝化层相接触，所述辅光阻间隔物与所述公共电极之间有间隙。
  16. 如权利要求11所述的In Cell触控显示面板，其中，所述第一基板、第二基板为玻璃基板。
  17. 如权利要求11所述的In Cell触控显示面板，其中，所述色阻层包括红色色阻层、绿色色阻层、及蓝色色阻层。
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