CN106775165B - 内嵌式触控显示面板及电子装置 - Google Patents

内嵌式触控显示面板及电子装置 Download PDF

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CN106775165B
CN106775165B CN201710010363.7A CN201710010363A CN106775165B CN 106775165 B CN106775165 B CN 106775165B CN 201710010363 A CN201710010363 A CN 201710010363A CN 106775165 B CN106775165 B CN 106775165B
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pixel electrode
tft
touch sensing
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CN106775165A (zh
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张红森
黄耀立
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种内嵌式触控显示面板及电子装置。该内嵌式触控显示面板改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层(21)变更到顶层，将像素电极层(16)变更到公共电极层(21)下方，像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)便连接至TFT(14)的源/漏极(145)，仅需要对平坦层(15)挖孔，而不需像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层(21)置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。

Description

内嵌式触控显示面板及电子装置
技术领域
本发明涉及触控显示技术领域，尤其涉及一种内嵌式触控显示面板及电子装置。
背景技术
触控技术作为智能化的一个重要指标，应用范围越来越广。触控技术经过快速的发展，按照触控原理可分为压阻式、光学式、电容式等，其中电容式触控技术经过多代的发展，应用最为广泛。电容式触控技术大致可分为外挂式(Add-on type)、外嵌式(On-celltype)、及内嵌式(In-cell type)。
如今，内嵌式触控显示面板越来越多地应用到手机等电子显示设备。内嵌式触控显示面板将触控与显示功能集成在一起，将触控传感器(Touch Sensor)制作在薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)(通常称为TFT阵列基板)与彩色滤光片基板(Color Filter，CF)之间，在保证触控灵敏度的同时，可以使触控显示产品更轻薄、光学显示性能更好，同时可以将显示和触控的驱动电路整合到一颗芯片，量产后可实现低成本效益。
传统的内嵌式触控显示面板主要是在TFT阵列基板的基础上增加触控传感器层的设计，通常是将TFT阵列基板侧的作为公共电极的底层氧化铟锡(Indium Tin Oxide，ITO)电极(常称为BITO)切割成多个图案化的触控感测电极，一般为正方形或长方形，然后在BITO及作为像素电极的顶层氧化铟锡电极(常称为TITO)之间增加一金属(Metal)层作为触控信号拉线，每个触控感测电极都会通过过孔与对应的触控信号拉线连接，最终接入显示和触控驱动集成芯片，这种架构设计可称为IMI架构。
具体地，请参阅图1，传统内嵌式触控显示面板的TFT阵列基板包括自下至上依次层叠设置的衬底10、遮光层20、缓冲层30、有源层40、栅极绝缘层50、栅极60、层间绝缘层70、源/漏极80、平坦层90、公共电极层100、顶层绝缘层110、触控信号拉线120、保护层130、及像素电极层140。如上述，底层的公共电极层100被切割成多个正方形或长方形的触控感测电极1001，不同触控感测电极1001之间完全隔开。触控信号拉线120通过贯穿顶层绝缘层110的第一过孔V10接触触控感测电极1001；像素电极层140通过贯穿保护层130的第二过孔V20、及连接第二过孔V20并贯穿顶层绝缘层110与平坦层90的第三过孔V30接触源/漏极80。该种IMI架构的设计在制作第二过孔V20、第三过孔V30时需要两个光罩、两道挖孔制程(包括使用光罩进行曝光、蚀刻、剥离等工序)。
请参阅图2，方块即示意为一个个的触控感测电极1001，每个触控感测电极1001都会通过对应的触控信号拉线120连接至显示和触控驱动集成芯片200。该种内嵌式触控显示面板的实现原理为：在手指触摸面板前后，触控感测电极1001感测到的电容量不同，显示和触控驱动集成芯片200通过检测这个电容变化量检测出手指的触控位置，从而实现触控功能。
虽然传统的IMI架构设计的触控显示面板可以顺利实现触控功能，但是制作时需要的光罩及工艺制程数量较多，成本较高。
发明内容
本发明的目的在于提供一种内嵌式触控显示面板，制作该内嵌式触控显示面板时需要的光罩及工艺制程数量较现有技术减少，能够降低生产成本，提高生产效率，并有利于改善触控性能，提升产品品质。
本发明的目的还在于提供一种电子装置，制作该电子装置中的内嵌式触控显示面板时需要的光罩及工艺制程数量较现有技术减少，能够降低生产成本，提高生产效率，并有利于改善触控性能，提升产品品质。
为实现上述目的，本发明首先提供一种内嵌式触控显示面板，包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线。
所述像素电极呈块状。
所述像素电极层与公共电极层的材料均为氧化铟锡。
所述的内嵌式触控显示面板还包括与TFT阵列基板相对设置的CF基板、及夹设在TFT阵列基板与CF基板之间的液晶层。
所述TFT阵列基板还包括玻璃衬底、设在所述玻璃衬底上的遮光层、覆盖所述玻璃衬底与遮光层的缓冲层；所述TFT设置在缓冲层上；
所述TFT包括设在缓冲层上的有源层、覆盖所述有源层与缓冲层的栅极绝缘层、于所述有源层上方设在栅极绝缘层上的栅极、覆盖所述栅极与栅极绝缘层的层间绝缘层、以及设在所述层间绝缘层上分别接触有源层两侧的源\漏极；
所述像素电极经由贯穿平坦层的第一过孔连接TFT的源\漏极。
本发明还提供一种电子装置，包括上述内嵌式触控显示面板。
本发明的有益效果：本发明提供的一种内嵌式触控显示面板及电子装置，改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层变更到顶层，将像素电极层变更到公共电极层下方，像素电极经由贯穿平坦层的第一过孔便连接至TFT的源/漏极，仅需要对平坦层挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为传统内嵌式触控显示面板的TFT阵列基板的剖面结构示意图；
图2为传统内嵌式触控显示面板中触控感测电极与触控信号拉线的分布示意图；
图3为本发明的内嵌式触控显示面板的剖面结构示意图；
图4为本发明的内嵌式触控显示面板中一个触控感测区域内的像素电极、触控感测电极图案、及触控信号拉线的分布示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图3与图4，本发明首先提供一种内嵌式触控显示面板，包括TFT阵列基板1、与所述TFT阵列基板1相对设置的CF基板3、及夹设在TFT阵列基板1与CF基板3之间的液晶层5。
所述TFT阵列基板1包括玻璃衬底11、设在所述玻璃衬底11上的遮光层12、覆盖所述玻璃衬底11与遮光层12的缓冲层13、设置在所述缓冲层13上的多个呈阵列式排布的TFT14、覆盖所述TFT 14的平坦层15、设在所述平坦层15上的像素电极层16、覆盖所述像素电极层16的保护层17、设在所述保护层17上的金属层18、覆盖所述金属层18的顶层绝缘层19、以及设在所述顶层绝缘层19上作为触控传感器的公共电极层21。
具体地，所述CF基板3通常包括常规的衬底层、彩膜层等，彩膜层又包括红、绿、蓝色阻及黑色矩阵等，与现有技术无异，此处予以省略。
所述TFT 14可以为顶栅型结构，也可以为底栅型结构。以所述TFT 14为顶栅型结构为例，包括设在缓冲层13上的有源层141、覆盖所述有源层141与缓冲层13的栅极绝缘层142、于所述有源层141上方设在栅极绝缘层142上的栅极143、覆盖所述栅极143与栅极绝缘层142的层间绝缘层144、以及设在所述层间绝缘层144上分别接触有源层141两侧的源\漏极145，所述遮光层12对应设于所述有源层141下方。
进一步地，所述像素电极层16与公共电极层21的材料均为氧化铟锡(Indium TinOxide，ITO)；所述金属层18可选择铜(Cu)、银(Ag)、铝(Al)等导电性能较好的材料；所述缓冲层13、栅极绝缘层142、层间绝缘层144、及顶层绝缘层19的材质为氧化硅(SiOx)、氮化硅(SiNx)等无机材料；所述有源层141包括沟道区、轻掺杂漏区、及重掺杂区，所述遮光层12遮挡有源层141的沟道区。
需要重点说明的是：
所述像素电极层16包括多个呈阵列式排布的独立的像素电极161，所述像素电极161呈块状，保证面板实现正常的显示功能。
所述金属层18包括多条触控信号拉线181。
所述公共电极层21包括多个触控感测区域211，每一触控感测区域211内设置多个触控感测电极图案2111，且同一行的触控感测电极图案2111直接串接，同一列的触控感测电极图案2111通过一条对应的触控信号拉线181连接在一起，保证面板实现正常的触控功能。
所述像素电极161经由贯穿平坦层15的第一过孔V1连接TFT 14的源\漏极145；所述触控感测电极图案211经由贯穿顶层绝缘层19的第二过孔V2连接对应的触控信号拉线181。
该内嵌式触控显示面板改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将像素电极层16变更到公共电极层1下方，将作为触控传感器的公共电极层21变更到顶层，像素电极161经由贯穿平坦层15的第一过孔V1便连接至TFT 14的源/漏极145，仅需要对平坦层15挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而制作所述保护层17时，仅需要沉积成膜，而不必使用光罩进行曝光、蚀刻、剥离等工序来挖孔，因此能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率。此外，作为触控传感器的公共电极层21置于顶层，距离其它信号线更远，相应的杂讯耦合电容更小，更有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质；触控信号拉线181与触控感测电极图案2111交叠的面积更小，所以顶层绝缘层19的膜厚可以设计的更薄，顶层绝缘层19与保护层17的总膜厚会变薄，对提升显示性能(如减少闪烁、串扰等问题)也有好处。
基于上述提供的内嵌式触控显示面板，本发明还提供一种电子装置，该电子装置包括上述内嵌式触控显示面板，此处不再对该内嵌式触控显示面板进行重复描述。所述电子装置可以但不限于为液晶电视、智能手机、数码相机、平板电脑、穿戴式手表等具有触控显示功能的产品。
综上所述，本发明的内嵌式触控显示面板及电子装置，改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层变更到顶层，将像素电极层变更到公共电极层下方，像素电极经由贯穿平坦层的第一过孔便连接至TFT的源/漏极，仅需要对平坦层挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种内嵌式触控显示面板，其特征在于，包括TFT阵列基板(1)；所述TFT阵列基板(1)包括多个呈阵列式排布的TFT(14)、覆盖所述TFT(14)的平坦层(15)、设在所述平坦层(15)上的像素电极层(16)、覆盖所述像素电极层(16)的保护层(17)、设在所述保护层(17)上的金属层(18)、覆盖所述金属层(18)的顶层绝缘层(19)、以及设在所述顶层绝缘层(19)上作为触控传感器的公共电极层(21)；
所述像素电极层(16)包括多个呈阵列式排布的独立的像素电极(161)；所述金属层(18)包括多条触控信号拉线(181)；所述公共电极层(21)包括多个触控感测区域(211)，每一触控感测区域(211)内设置多个触控感测电极图案(2111)，且同一行的触控感测电极图案(2111)直接串接，同一列的触控感测电极图案(2111)通过一条对应的触控信号拉线(181)连接在一起；
所述像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)连接TFT(14)；所述触控感测电极图案(2111)经由贯穿顶层绝缘层(19)的第二过孔(V2)连接对应的触控信号拉线(181)；
每条触控信号拉线(181)位于相邻两列像素电极(161)之间；
多个触控感测电极图案(2111)分别与多个像素电极(161)一一对应，且每个触控感测电极图案(2111)位于对应的像素电极(161)的上方。
2.如权利要求1所述的内嵌式触控显示面板，其特征在于，所述像素电极(161)呈块状。
3.如权利要求1所述的内嵌式触控显示面板，其特征在于，所述像素电极层(16)与公共电极层(21)的材料均为氧化铟锡。
4.如权利要求1所述的内嵌式触控显示面板，其特征在于，还包括与TFT阵列基板(1)相对设置的CF基板(3)、及夹设在TFT阵列基板(1)与CF基板(3)之间的液晶层(5)。
5.如权利要求1所述的内嵌式触控显示面板，其特征在于，所述TFT阵列基板(1)还包括玻璃衬底(11)、设在所述玻璃衬底(11)上的遮光层(12)、覆盖所述玻璃衬底(11)与遮光层(12)的缓冲层(13)；所述TFT(14)设置在缓冲层(13)上；
所述TFT(14)包括设在缓冲层(13)上的有源层(141)、覆盖所述有源层(141)与缓冲层(13)的栅极绝缘层(142)、于所述有源层(141)上方设在栅极绝缘层(142)上的栅极(143)、覆盖所述栅极(143)与栅极绝缘层(142)的层间绝缘层(144)、以及设在所述层间绝缘层(144)上分别接触有源层(141)两侧的源\漏极(145)；
所述像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)连接TFT(14)的源\漏极(145)。
6.一种电子装置，其特征在于，包括内嵌式触控显示面板，所述内嵌式触控显示面板包括TFT阵列基板(1)；所述TFT阵列基板(1)包括多个呈阵列式排布的TFT(14)、覆盖所述TFT(14)的平坦层(15)、设在所述平坦层(15)上的像素电极层(16)、覆盖所述像素电极层(16)的保护层(17)、设在所述保护层(17)上的金属层(18)、覆盖所述金属层(18)的顶层绝缘层(19)、以及设在所述顶层绝缘层(19)上作为触控传感器的公共电极层(21)；
所述像素电极层(16)包括多个呈阵列式排布的独立的像素电极(161)；所述金属层(18)包括多条触控信号拉线(181)；所述公共电极层(21)包括多个触控感测区域(211)，每一触控感测区域(211)内设置多个触控感测电极图案(2111)，且同一行的触控感测电极图案(2111)直接串接，同一列的触控感测电极图案(2111)通过一条对应的触控信号拉线(181)连接在一起；
所述像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)连接TFT(14)；所述触控感测电极图案(2111 )经由贯穿顶层绝缘层(19)的第二过孔(V2)连接对应的触控信号拉线(181)；
每条触控信号拉线(181)位于相邻两列像素电极(161)之间；
多个触控感测电极图案(2111)分别与多个像素电极(161)一一对应，且每个触控感测电极图案(2111)位于对应的像素电极(161)的上方。
7.如权利要求6所述的电子装置，其特征在于，所述像素电极(161)呈块状。
8.如权利要求6所述的电子装置，其特征在于，所述像素电极层(16)与公共电极层(21 )的材料均为氧化铟锡。
9.如权利要求6所述的电子装置，其特征在于，所述内嵌式触控显示面板还包括与TFT阵列基板(1)相对设置的CF基板(3)、及夹设在TFT阵列基板(1)与CF基板(3)之间的液晶层(5)。
10.如权利要求6所述的电子装置，其特征在于，所述TFT阵列基板(1)还包括玻璃衬底(11)、设在所述玻璃衬底(11)上的遮光层(12)、覆盖所述玻璃衬底(11)与遮光层(12)的缓冲层(13)；所述TFT(14)设置在缓冲层(13)上；
所述TFT(14)包括设在缓冲层(13)上的有源层(141)、覆盖所述有源层(141)与缓冲层(13)的栅极绝缘层(142)、于所述有源层(141)上方设在栅极绝缘层(142)上的栅极(143)、覆盖所述栅极(143)与栅极绝缘层(142)的层间绝缘层(144)、以及设在所述层间绝缘层(144)上分别接触有源层(141)两侧的源\漏极(145)；
所述像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)连接TFT(14)的源\漏极(145)。
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