WO2018126516A1 - 内嵌式触控显示面板及电子装置 - Google Patents

内嵌式触控显示面板及电子装置 Download PDF

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Publication number
WO2018126516A1
WO2018126516A1 PCT/CN2017/073884 CN2017073884W WO2018126516A1 WO 2018126516 A1 WO2018126516 A1 WO 2018126516A1 CN 2017073884 W CN2017073884 W CN 2017073884W WO 2018126516 A1 WO2018126516 A1 WO 2018126516A1
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layer
pixel electrode
disposed
tft
touch
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PCT/CN2017/073884
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English (en)
French (fr)
Inventor
张红森
黄耀立
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武汉华星光电技术有限公司
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Priority to US15/514,527 priority Critical patent/US10101838B2/en
Publication of WO2018126516A1 publication Critical patent/WO2018126516A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

Definitions

  • the present invention relates to the field of touch display technologies, and in particular, to an in-cell touch display panel and an electronic device.
  • Capacitive touch technology can be roughly classified into an add-on type, an on-cell type, and an in-cell type.
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • CF color filter
  • the conventional in-cell touch display panel mainly adds a touch sensor layer design based on the TFT array substrate, and is usually an underlying Tin Oxide (ITO) electrode as a common electrode on the TFT array substrate side.
  • ITO Tin Oxide
  • BITO Tin Oxide
  • TITO top indium tin oxide electrode
  • the metal layer is used as the touch signal cable.
  • Each touch sensing electrode is connected to the corresponding touch signal cable through the via hole, and finally connected to the display and touch driving integrated chip.
  • This architecture design can be called IMI architecture.
  • the TFT array substrate of the conventional in-cell touch display panel includes a substrate 10 , a light shielding layer 20 , a buffer layer 30 , an active layer 40 , and a gate insulating layer 50 which are sequentially stacked from bottom to top.
  • the bottom common electrode layer 100 is cut into a plurality of square or rectangular touch sensing electrodes 1001, and the different touch sensing electrodes 1001 are completely separated.
  • the touch signal cable 120 contacts the touch sensing electrode 1001 through the first via hole V10 penetrating the top insulating layer 110; the pixel electrode layer 140 passes through the second via hole V20 of the protective layer 130 and connects the second via hole V20
  • the design of the IMI architecture requires two masks and two boring processes (including exposure, etching, stripping, etc. using a mask) in the fabrication of the second via V20 and the third via V30.
  • the block is illustrated as a single touch sensing electrode 1001 .
  • Each touch sensing electrode 1001 is connected to the display and touch driving integrated chip 200 through a corresponding touch signal cable 120 .
  • the implementation principle of the in-cell touch display panel is: before and after the finger touch panel, the touch sensing electrodes 1001 sense different capacitances, and the display and touch driving integrated chip 200 detects the capacitance change by detecting the capacitance change. The touch position of the finger to achieve the touch function.
  • the touch display panel designed by the traditional IMI architecture can smoothly implement the touch function, the number of masks and process processes required for the production is large, and the cost is high.
  • An object of the present invention is to provide an in-cell touch display panel.
  • the number of photomasks and process processes required for fabricating the in-cell touch display panel is reduced compared with the prior art, which can reduce production cost and improve production efficiency. Helps improve touch performance and improve product quality.
  • Another object of the present invention is to provide an electronic device, which reduces the number of photomasks and process processes required for the in-cell touch display panel in the electronic device, reduces the production cost, and improves the production efficiency. Helps improve touch performance and improve product quality.
  • the present invention firstly provides an in-cell touch display panel comprising a TFT array substrate;
  • the TFT array substrate includes a plurality of TFTs arranged in an array, a flat layer covering the TFT, and a pixel electrode layer on the flat layer, a protective layer covering the pixel electrode layer, a metal layer provided on the protective layer, a top insulating layer covering the metal layer, and a top insulating layer As a common electrode layer of the touch sensor;
  • the pixel electrode layer includes a plurality of independent pixel electrodes arranged in an array;
  • the metal layer includes a plurality of touch signal pull wires;
  • the common electrode layer includes a plurality of touch sensing regions, each touch sense A plurality of touch sensing electrode patterns are disposed in the measurement area, and the touch sensing electrode patterns in the same row are directly connected in series, and the touch sensing electrode patterns in the same row are connected by a corresponding touch signal pull line;
  • the pixel electrode is connected to the TFT via a first via hole penetrating the flat layer; the touch sensing electrode pattern is connected to the corresponding touch signal cable via a second via hole penetrating the top insulating layer.
  • the pixel electrode is in a block shape.
  • the material of the pixel electrode layer and the common electrode layer is indium tin oxide.
  • the in-cell touch display panel further includes a CF substrate disposed opposite to the TFT array substrate, and a liquid crystal layer interposed between the TFT array substrate and the CF substrate.
  • the TFT array substrate further includes a glass substrate, a light shielding layer disposed on the glass substrate, and a buffer layer covering the glass substrate and the light shielding layer; the TFT is disposed on the buffer layer;
  • the TFT includes an active layer disposed on the buffer layer, a gate insulating layer covering the active layer and the buffer layer, and a gate disposed on the gate insulating layer above the active layer, covering the gate An interlayer insulating layer of the gate and the gate insulating layer, and a source/drain provided on both sides of the active layer respectively on the interlayer insulating layer;
  • the pixel electrode connects the source/drain of the TFT via a first via that penetrates the flat layer.
  • the invention also provides an electronic device comprising the above-mentioned in-cell touch display panel.
  • the present invention further provides an in-cell touch display panel comprising a TFT array substrate; the TFT array substrate comprising a plurality of TFTs arranged in an array, a flat layer covering the TFT, and being disposed on the flat layer a pixel electrode layer, a protective layer covering the pixel electrode layer, a metal layer disposed on the protective layer, a top insulating layer covering the metal layer, and a top surface insulating layer as a touch sensor Common electrode layer;
  • the pixel electrode layer includes a plurality of independent pixel electrodes arranged in an array;
  • the metal layer includes a plurality of touch signal pull wires;
  • the common electrode layer includes a plurality of touch sensing regions, each touch sense A plurality of touch sensing electrode patterns are disposed in the measurement area, and the touch sensing electrode patterns in the same row are directly connected in series, and the touch sensing electrode patterns in the same row are connected by a corresponding touch signal pull line;
  • the pixel electrode is connected to the TFT via a first via hole penetrating the flat layer; the touch sensing electrode pattern is connected to the corresponding touch signal cable via the second via hole penetrating the top insulating layer;
  • the pixel electrode is in a block shape
  • the material of the pixel electrode layer and the common electrode layer are both indium tin oxide.
  • the present invention provides an in-cell touch display panel and an electronic device, which change the position of the pixel electrode layer and the common electrode layer on the substrate side of the conventional touch display panel array, and will serve as a common touch sensor.
  • the electrode layer is changed to the top layer, the pixel electrode layer is changed under the common electrode layer, and the pixel electrode is connected to the source/drain of the TFT via the first via hole penetrating the flat layer, and only the flat layer needs to be punctured without
  • the hole of the protective layer is punctured, and the hole is dug in the flat layer to realize the connection between the pixel electrode and the TFT, thereby reducing the reticle and a hole boring process, saving the purchase cost of the reticle and reducing the production cost.
  • Increased productivity; in addition, the common electrode layer of the touch sensor is placed on the top layer to optimize sensitivity and signal-to-noise ratio, thereby improving touch performance and improving product quality.
  • FIG. 1 is a schematic cross-sectional structural view of a TFT array substrate of a conventional in-cell touch display panel
  • FIG. 2 is a schematic diagram showing a distribution of a touch sensing electrode and a touch signal pull line in a conventional in-cell touch display panel
  • FIG. 3 is a cross-sectional structural view of an in-cell touch display panel of the present invention.
  • FIG. 4 is a schematic diagram of distribution of pixel electrodes, touch sensing electrode patterns, and touch signal pull lines in a touch sensing area of the in-cell touch display panel of the present invention.
  • the present invention firstly provides an in-cell touch display panel, including a TFT array substrate 1 , a CF substrate 3 disposed opposite to the TFT array substrate 1 , and a TFT array substrate. 1 and a liquid crystal layer 5 between the CF substrate 3.
  • the TFT array substrate 1 includes a glass substrate 11 , a light shielding layer 12 disposed on the glass substrate 11 , a buffer layer 13 covering the glass substrate 11 and the light shielding layer 12 , and a buffer layer 13 disposed on the buffer layer 13 .
  • a plurality of TFTs arranged in an array a flat layer 15 covering the TFTs 14, a pixel electrode layer 16 provided on the flat layer 15, a protective layer 17 covering the pixel electrode layer 16, and A metal layer 18 on the protective layer 17, a top insulating layer 19 covering the metal layer 18, and a common electrode layer 21 disposed on the top insulating layer 19 as a touch sensor.
  • the CF substrate 3 generally includes a conventional substrate layer, a color film layer, and the like, and the color film layer further includes red, green, blue, and black matrices, etc., which is the same as the prior art and is omitted here.
  • the TFT 14 may be a top gate type structure or a bottom gate type structure.
  • the TFT 14 is a top gate type structure, and includes an active layer 141 disposed on the buffer layer 13, a gate insulating layer 142 covering the active layer 141 and the buffer layer 13, and the active layer. a gate electrode 143 disposed on the gate insulating layer 142, an interlayer insulating layer 144 covering the gate electrode 143 and the gate insulating layer 142, and an interlayer insulating layer 144 respectively contacting the active layer
  • the source/drain 145 on both sides of the 141, the light shielding layer 12 is correspondingly disposed under the active layer 141.
  • the material of the pixel electrode layer 16 and the common electrode layer 21 are both Indium Tin Oxide (ITO); the metal layer 18 may be selected from copper (Cu), silver (Ag), and aluminum (Al).
  • the material having better conductivity; the buffer layer 13, the gate insulating layer 142, the interlayer insulating layer 144, and the top insulating layer 19 are made of silicon oxide (SiOx), silicon nitride (SiNx), or the like.
  • the active layer 141 includes a channel region, a lightly doped drain region, and a heavily doped region, and the light shielding layer 12 blocks the channel region of the active layer 141.
  • the pixel electrode layer 16 includes a plurality of independent pixel electrodes 161 arranged in an array, and the pixel electrodes 161 are in a block shape to ensure a normal display function of the panel.
  • the metal layer 18 includes a plurality of touch signal pull wires 181.
  • the common electrode layer 21 includes a plurality of touch sensing regions 211. Each of the touch sensing regions 211 is provided with a plurality of touch sensing electrode patterns 2111, and the touch sensing electrode patterns 2111 of the same row are directly connected in series. The touch sensing electrode patterns 2111 of the same column are connected together by a corresponding touch signal cable 181 to ensure that the panel achieves a normal touch function.
  • the pixel electrode 161 is connected to the source/drain 145 of the TFT 14 via the first via hole V1 penetrating the flat layer 15; the touch sensing electrode pattern 211 is connected via the second via hole V2 penetrating the top insulating layer 19 Touch signal cable 181.
  • the in-cell touch display panel changes the position of the pixel electrode layer and the common electrode layer on the substrate side of the conventional touch display panel array, and changes the pixel electrode layer 16 below the common electrode layer 21 to serve as a common electrode layer of the touch sensor.
  • 21 is changed to the top layer, and the pixel electrode 161 is connected to the source/drain 145 of the TFT 14 via the first via hole V1 penetrating the flat layer 15, and only the flat layer 15 needs to be punctured without requiring the same as in the prior art.
  • the protective layer is punctured, and the flat layer is punctured to realize the connection between the pixel electrode and the TFT.
  • the protective layer 17 When the protective layer 17 is formed, only the film formation needs to be deposited, and it is not necessary to use a mask for exposure, etching, peeling, etc.
  • the hole can reduce the reticle and a hole boring process, save the cost of reticle purchase, reduce the production cost and increase the production efficiency.
  • the common electrode layer 21 as the touch sensor is placed on the top layer, farther away from other signal lines, and the corresponding noise coupling capacitance is smaller, which is more advantageous for optimizing sensitivity and signal to noise ratio, thereby improving touch performance and improving product quality.
  • the area of the touch signal pull line 181 overlapping with the touch sensing electrode pattern 2111 is smaller, so the film thickness of the top insulating layer 19 can be designed to be thinner, and the total film thickness of the top insulating layer 19 and the protective layer 17 is thinner. It is also good for improving display performance (such as reducing flicker, crosstalk, etc.).
  • the present invention further provides an electronic device including the in-cell touch display panel, and the in-cell touch display panel is not repeatedly described herein.
  • the electronic device may be, but not limited to, a product having a touch display function such as a liquid crystal television, a smart phone, a digital camera, a tablet computer, a wearable watch, or the like.
  • the in-cell touch display panel and the electronic device of the present invention change the position of the pixel electrode layer and the common electrode layer on the substrate side of the conventional touch display panel array, and change the common electrode layer as the touch sensor to
  • the top layer changes the pixel electrode layer below the common electrode layer, pixel
  • the electrode is connected to the source/drain of the TFT via the first via hole penetrating the flat layer, and only the flat layer needs to be punctured, and it is not necessary to dig the hole in the protective layer and dig the hole in the flat layer as in the prior art.
  • connection between the pixel electrode and the TFT is realized, thereby reducing a mask and a hole boring process, saving the purchase cost of the mask, reducing the production cost, and improving the production efficiency; in addition, the common electrode layer as the touch sensor is placed on the top layer. It also helps to optimize sensitivity and signal-to-noise ratio to improve touch performance and improve product quality.

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  • Nonlinear Science (AREA)
  • Human Computer Interaction (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

本发明提供一种内嵌式触控显示面板及电子装置。该内嵌式触控显示面板改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层(21)变更到顶层，将像素电极层(16)变更到公共电极层(21)下方，像素电极(161)经由贯穿平坦层(15)的第一过孔(V1)便连接至TFT(14)的源/漏极(145)，仅需要对平坦层(15)挖孔，而不需像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层(21)置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。

Description

内嵌式触控显示面板及电子装置 技术领域
本发明涉及触控显示技术领域，尤其涉及一种内嵌式触控显示面板及电子装置。
背景技术
触控技术作为智能化的一个重要指标，应用范围越来越广。触控技术经过快速的发展，按照触控原理可分为压阻式、光学式、电容式等，其中电容式触控技术经过多代的发展，应用最为广泛。电容式触控技术大致可分为外挂式(Add-on type)、外嵌式(On-cell type)、及内嵌式(In-cell type)。
如今，内嵌式触控显示面板越来越多地应用到手机等电子显示设备。内嵌式触控显示面板将触控与显示功能集成在一起，将触控传感器(Touch Sensor)制作在薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)(通常称为TFT阵列基板)与彩色滤光片基板(Color Filter，CF)之间，在保证触控灵敏度的同时，可以使触控显示产品更轻薄、光学显示性能更好，同时可以将显示和触控的驱动电路整合到一颗芯片，量产后可实现低成本效益。
传统的内嵌式触控显示面板主要是在TFT阵列基板的基础上增加触控传感器层的设计，通常是将TFT阵列基板侧的作为公共电极的底层氧化铟锡(Indium Tin Oxide，ITO)电极(常称为BITO)切割成多个图案化的触控感测电极，一般为正方形或长方形，然后在BITO及作为像素电极的顶层氧化铟锡电极(常称为TITO)之间增加一金属(Metal)层作为触控信号拉线，每个触控感测电极都会通过过孔与对应的触控信号拉线连接，最终接入显示和触控驱动集成芯片，这种架构设计可称为IMI架构。
具体地，请参阅图1，传统内嵌式触控显示面板的TFT阵列基板包括自下至上依次层叠设置的衬底10、遮光层20、缓冲层30、有源层40、栅极绝缘层50、栅极60、层间绝缘层70、源/漏极80、平坦层90、公共电极层100、顶层绝缘层110、触控信号拉线120、保护层130、及像素电极层140。如上述，底层的公共电极层100被切割成多个正方形或长方形的触控感测电极1001，不同触控感测电极1001之间完全隔开。触控信号拉线120通过贯穿顶层绝缘层110的第一过孔V10接触触控感测电极1001；像素电极层140通过贯穿保护层130的第二过孔V20、及连接第二过孔V20并贯 穿顶层绝缘层110与平坦层90的第三过孔V30接触源/漏极80。该种IMI架构的设计在制作第二过孔V20、第三过孔V30时需要两个光罩、两道挖孔制程(包括使用光罩进行曝光、蚀刻、剥离等工序)。
请参阅图2，方块即示意为一个个的触控感测电极1001，每个触控感测电极1001都会通过对应的触控信号拉线120连接至显示和触控驱动集成芯片200。该种内嵌式触控显示面板的实现原理为：在手指触摸面板前后，触控感测电极1001感测到的电容量不同，显示和触控驱动集成芯片200通过检测这个电容变化量检测出手指的触控位置，从而实现触控功能。
虽然传统的IMI架构设计的触控显示面板可以顺利实现触控功能，但是制作时需要的光罩及工艺制程数量较多，成本较高。
发明内容
本发明的目的在于提供一种内嵌式触控显示面板，制作该内嵌式触控显示面板时需要的光罩及工艺制程数量较现有技术减少，能够降低生产成本，提高生产效率，并有利于改善触控性能，提升产品品质。
本发明的目的还在于提供一种电子装置，制作该电子装置中的内嵌式触控显示面板时需要的光罩及工艺制程数量较现有技术减少，能够降低生产成本，提高生产效率，并有利于改善触控性能，提升产品品质。
为实现上述目的，本发明首先提供一种内嵌式触控显示面板，包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线。
所述像素电极呈块状。
所述像素电极层与公共电极层的材料均为氧化铟锡。
所述的内嵌式触控显示面板还包括与TFT阵列基板相对设置的CF基板、及夹设在TFT阵列基板与CF基板之间的液晶层。
所述TFT阵列基板还包括玻璃衬底、设在所述玻璃衬底上的遮光层、覆盖所述玻璃衬底与遮光层的缓冲层；所述TFT设置在缓冲层上；
所述TFT包括设在缓冲层上的有源层、覆盖所述有源层与缓冲层的栅极绝缘层、于所述有源层上方设在栅极绝缘层上的栅极、覆盖所述栅极与栅极绝缘层的层间绝缘层、以及设在所述层间绝缘层上分别接触有源层两侧的源\漏极；
所述像素电极经由贯穿平坦层的第一过孔连接TFT的源\漏极。
本发明还提供一种电子装置，包括上述内嵌式触控显示面板。
本发明还提供一种内嵌式触控显示面板，包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线；
其中，所述像素电极呈块状；
其中，所述像素电极层与公共电极层的材料均为氧化铟锡。
本发明的有益效果：本发明提供的一种内嵌式触控显示面板及电子装置，改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层变更到顶层，将像素电极层变更到公共电极层下方，像素电极经由贯穿平坦层的第一过孔便连接至TFT的源/漏极，仅需要对平坦层挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为传统内嵌式触控显示面板的TFT阵列基板的剖面结构示意图；
图2为传统内嵌式触控显示面板中触控感测电极与触控信号拉线的分布示意图；
图3为本发明的内嵌式触控显示面板的剖面结构示意图；
图4为本发明的内嵌式触控显示面板中一个触控感测区域内的像素电极、触控感测电极图案、及触控信号拉线的分布示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图3与图4，本发明首先提供一种内嵌式触控显示面板，包括TFT阵列基板1、与所述TFT阵列基板1相对设置的CF基板3、及夹设在TFT阵列基板1与CF基板3之间的液晶层5。
所述TFT阵列基板1包括玻璃衬底11、设在所述玻璃衬底11上的遮光层12、覆盖所述玻璃衬底11与遮光层12的缓冲层13、设置在所述缓冲层13上的多个呈阵列式排布的TFT 14、覆盖所述TFT 14的平坦层15、设在所述平坦层15上的像素电极层16、覆盖所述像素电极层16的保护层17、设在所述保护层17上的金属层18、覆盖所述金属层18的顶层绝缘层19、以及设在所述顶层绝缘层19上作为触控传感器的公共电极层21。
具体地，所述CF基板3通常包括常规的衬底层、彩膜层等，彩膜层又包括红、绿、蓝色阻及黑色矩阵等，与现有技术无异，此处予以省略。
所述TFT 14可以为顶栅型结构，也可以为底栅型结构。以所述TFT 14为顶栅型结构为例，包括设在缓冲层13上的有源层141、覆盖所述有源层141与缓冲层13的栅极绝缘层142、于所述有源层141上方设在栅极绝缘层142上的栅极143、覆盖所述栅极143与栅极绝缘层142的层间绝缘层144、以及设在所述层间绝缘层144上分别接触有源层141两侧的源\漏极145，所述遮光层12对应设于所述有源层141下方。
进一步地，所述像素电极层16与公共电极层21的材料均为氧化铟锡(Indium Tin Oxide，ITO)；所述金属层18可选择铜(Cu)、银(Ag)、铝(Al)等导电性能较好的材料；所述缓冲层13、栅极绝缘层142、层间绝缘层144、及顶层绝缘层19的材质为氧化硅(SiOx)、氮化硅(SiNx)等无 机材料；所述有源层141包括沟道区、轻掺杂漏区、及重掺杂区，所述遮光层12遮挡有源层141的沟道区。
需要重点说明的是：
所述像素电极层16包括多个呈阵列式排布的独立的像素电极161，所述像素电极161呈块状，保证面板实现正常的显示功能。
所述金属层18包括多条触控信号拉线181。
所述公共电极层21包括多个触控感测区域211，每一触控感测区域211内设置多个触控感测电极图案2111，且同一行的触控感测电极图案2111直接串接，同一列的触控感测电极图案2111通过一条对应的触控信号拉线181连接在一起，保证面板实现正常的触控功能。
所述像素电极161经由贯穿平坦层15的第一过孔V1连接TFT 14的源\漏极145；所述触控感测电极图案211经由贯穿顶层绝缘层19的第二过孔V2连接对应的触控信号拉线181。
该内嵌式触控显示面板改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将像素电极层16变更到公共电极层21下方，将作为触控传感器的公共电极层21变更到顶层，像素电极161经由贯穿平坦层15的第一过孔V1便连接至TFT 14的源/漏极145，仅需要对平坦层15挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而制作所述保护层17时，仅需要沉积成膜，而不必使用光罩进行曝光、蚀刻、剥离等工序来挖孔，因此能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率。此外，作为触控传感器的公共电极层21置于顶层，距离其它信号线更远，相应的杂讯耦合电容更小，更有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质；触控信号拉线181与触控感测电极图案2111交叠的面积更小，所以顶层绝缘层19的膜厚可以设计的更薄，顶层绝缘层19与保护层17的总膜厚会变薄，对提升显示性能(如减少闪烁、串扰等问题)也有好处。
基于上述提供的内嵌式触控显示面板，本发明还提供一种电子装置，该电子装置包括上述内嵌式触控显示面板，此处不再对该内嵌式触控显示面板进行重复描述。所述电子装置可以但不限于为液晶电视、智能手机、数码相机、平板电脑、穿戴式手表等具有触控显示功能的产品。
综上所述，本发明的内嵌式触控显示面板及电子装置，改变了传统触控显示面板阵列基板侧像素电极层与公共电极层的位置，将作为触控传感器的公共电极层变更到顶层，将像素电极层变更到公共电极层下方，像素 电极经由贯穿平坦层的第一过孔便连接至TFT的源/漏极，仅需要对平坦层挖孔，而不需要像现有技术那样既对保护层挖孔，又对平坦层挖孔才能实现像素电极与TFT的连接，从而能够减少一个光罩及一道挖孔制程，节约了光罩购买费用，降低了生产成本，提升了生产效率；此外，作为触控传感器的公共电极层置于顶层还有利于优化灵敏度和信噪比，从而改善触控性能，提升产品品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种内嵌式触控显示面板，包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
    所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线。
  2. 如权利要求1所述的内嵌式触控显示面板，其中，所述像素电极呈块状。
  3. 如权利要求1所述的内嵌式触控显示面板，其中，所述像素电极层与公共电极层的材料均为氧化铟锡。
  4. 如权利要求1所述的内嵌式触控显示面板，还包括与TFT阵列基板相对设置的CF基板、及夹设在TFT阵列基板与CF基板之间的液晶层。
  5. 如权利要求1所述的内嵌式触控显示面板，其中，所述TFT阵列基板还包括玻璃衬底、设在所述玻璃衬底上的遮光层、覆盖所述玻璃衬底与遮光层的缓冲层；所述TFT设置在缓冲层上；
    所述TFT包括设在缓冲层上的有源层、覆盖所述有源层与缓冲层的栅极绝缘层、于所述有源层上方设在栅极绝缘层上的栅极、覆盖所述栅极与栅极绝缘层的层间绝缘层、以及设在所述层间绝缘层上分别接触有源层两侧的源\漏极；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT的源\漏极。
  6. 一种电子装置，包括内嵌式触控显示面板，所述内嵌式触控显示面板包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
    所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线。
  7. 如权利要求6所述的电子装置，其中，所述像素电极呈块状。
  8. 如权利要求6所述的电子装置，其中，所述像素电极层与公共电极层的材料均为氧化铟锡。
  9. 如权利要求6所述的电子装置，其中，所述内嵌式触控显示面板还包括与TFT阵列基板相对设置的CF基板、及夹设在TFT阵列基板与CF基板之间的液晶层。
  10. 如权利要求6所述的电子装置，其中，所述TFT阵列基板还包括玻璃衬底、设在所述玻璃衬底上的遮光层、覆盖所述玻璃衬底与遮光层的缓冲层；所述TFT设置在缓冲层上；
    所述TFT包括设在缓冲层上的有源层、覆盖所述有源层与缓冲层的栅极绝缘层、于所述有源层上方设在栅极绝缘层上的栅极、覆盖所述栅极与栅极绝缘层的层间绝缘层、以及设在所述层间绝缘层上分别接触有源层两侧的源\漏极；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT的源\漏极。
  11. 一种内嵌式触控显示面板，包括TFT阵列基板；所述TFT阵列基板包括多个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设在所述平坦层上的像素电极层、覆盖所述像素电极层的保护层、设在所述保护层上的金属层、覆盖所述金属层的顶层绝缘层、以及设在所述顶层绝缘层上作为触控传感器的公共电极层；
    所述像素电极层包括多个呈阵列式排布的独立的像素电极；所述金属层包括多条触控信号拉线；所述公共电极层包括多个触控感测区域，每一触控感测区域内设置多个触控感测电极图案，且同一行的触控感测电极图案直接串接，同一列的触控感测电极图案通过一条对应的触控信号拉线连接在一起；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT；所述触控感测电极图案经由贯穿顶层绝缘层的第二过孔连接对应的触控信号拉线；
    其中，所述像素电极呈块状；
    其中，所述像素电极层与公共电极层的材料均为氧化铟锡。
  12. 如权利要求11所述的内嵌式触控显示面板，还包括与TFT阵列基板相对设置的CF基板、及夹设在TFT阵列基板与CF基板之间的液晶层。
  13. 如权利要求11所述的内嵌式触控显示面板，其中，所述TFT阵列基板还包括玻璃衬底、设在所述玻璃衬底上的遮光层、覆盖所述玻璃衬底与遮光层的缓冲层；所述TFT设置在缓冲层上；
    所述TFT包括设在缓冲层上的有源层、覆盖所述有源层与缓冲层的栅极绝缘层、于所述有源层上方设在栅极绝缘层上的栅极、覆盖所述栅极与栅极绝缘层的层间绝缘层、以及设在所述层间绝缘层上分别接触有源层两侧的源\漏极；
    所述像素电极经由贯穿平坦层的第一过孔连接TFT的源\漏极。
PCT/CN2017/073884 2017-01-06 2017-02-17 内嵌式触控显示面板及电子装置 WO2018126516A1 (zh)

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