WO2017124605A1 - 触摸面板以及其制造方法 - Google Patents

触摸面板以及其制造方法 Download PDF

Info

Publication number
WO2017124605A1
WO2017124605A1 PCT/CN2016/074509 CN2016074509W WO2017124605A1 WO 2017124605 A1 WO2017124605 A1 WO 2017124605A1 CN 2016074509 W CN2016074509 W CN 2016074509W WO 2017124605 A1 WO2017124605 A1 WO 2017124605A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
touch
electrode layer
thin film
via hole
Prior art date
Application number
PCT/CN2016/074509
Other languages
English (en)
French (fr)
Inventor
郝思坤
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/030,745 priority Critical patent/US20180046289A1/en
Publication of WO2017124605A1 publication Critical patent/WO2017124605A1/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user

Definitions

  • the present invention relates to the field of capacitive sensing technology, and more particularly to a touch panel using a capacitive sensing component and a method of fabricating the same.
  • the liquid crystal display has the advantages of low power consumption, low flickering, vivid color and the like, and is widely used in electronic products such as mobile phones, cameras, computer screens, televisions, etc., and is currently the mainstream display.
  • the touch screen has the advantages of sturdy and durable, fast response, space saving, and easy communication.
  • the touch technology the user only needs to touch the graphic symbols or characters on the touch screen with a finger to realize the operation of the host, thereby enabling human-computer interaction. It is more straightforward and greatly facilitates users who are not familiar with computer operations.
  • the screens of many electronic devices combine liquid crystal display technology and touch technology, which not only has the advantages of liquid crystal display, but also realizes touch operation, and is popular among consumers.
  • the touch electrode for implementing the touch function is usually located under the pixel electrode of the liquid crystal display panel, which is easy to cause the touch electrode. It is difficult to sense the user's touch operation and reduce the sensitivity of the touch.
  • the conventional capacitive sensing component has a diamond-like shape in which the transparent first conductive line and the second conductive line are vertically and vertically overlapped, and the first conductive line and the second conductive line are respectively arranged with the driving lines arranged in the lateral direction.
  • the sensing lines arranged in the longitudinal direction are connected.
  • the driving line and the sensing line generate parasitic capacitance at positions crossing each other, thus affecting the aperture ratio of the pixel.
  • a large number of drive lines are set in the active area of the panel (Active One side of the area increases the width of the border of the display, which is not conducive to the display of the narrow bezel.
  • an object of the present invention is to provide an in-cell touch panel with a self-capacitive touch panel and a horizontal switching type (In plane)
  • the switching, IPS) panels are integrated to solve the above technical problems.
  • the present invention further provides a touch panel comprising: a substrate; a first metal layer on the substrate for forming a gate of the thin film transistor; a gate insulating layer on the first metal layer; a metal layer on the gate insulating layer for forming the data line, a source and a drain of the thin film transistor; an isolation layer on the second metal layer and disposed through the isolation layer a first via hole, the first via hole is aligned with the source or the drain; a third metal layer is disposed on the isolation layer for forming a touch control line, and the touch control line is used for Transmitting a touch signal and a common voltage; a passivation layer is stacked on the isolation layer, and the first through hole and the second through hole are formed through the passivation layer, and the second through hole is aligned a data line; a pixel electrode layer connected to the source or the drain through the first through hole; and a touch electrode layer connected to the touch control line through the second through hole; wherein
  • the touch electrode layer serves as a
  • the pixel electrode layer and the touch electrode layer are simultaneously formed by a conductive layer.
  • the conductive layer is made of indium tin oxide or a metal.
  • the data line is used to transfer a data voltage to the pixel electrode layer through the thin film transistor.
  • the data line when the touch control line transmits the common voltage to the touch electrode layer, the data line is used to transfer a data voltage to the pixel electrode layer through the thin film transistor.
  • the data line when the touch control line transmits the touch signal to the touch electrode layer, the data line stops transmitting a data voltage to the pixel electrode layer through the thin film transistor.
  • the present invention further provides a method of manufacturing a touch panel, comprising: forming a first metal layer on a substrate; etching the first metal layer to form a gate of the thin film transistor; forming a gate insulating layer on the thin film transistor Forming a second metal layer on the gate insulating layer; etching the second metal layer to form a data line, a source and a drain of the thin film transistor; forming an isolation layer on the data line, Overlying the source and the drain of the thin film transistor; etching the isolation layer to form a first via through the isolation layer, the first via aligning with the source or drain; depositing a third a metal layer on the isolation layer; etching the third metal layer to form a touch control line above the data line, the touch control line is for transmitting a touch signal and a common voltage; depositing a passivation layer The passivation layer is etched to form the first via hole and the second via hole penetrating the passivation layer, and the second via hole is located at the isolation
  • the third metal layer and the conductive layer are made of indium tin oxide or a metal.
  • the method before the step of forming the second metal layer on the gate insulating layer, the method further comprises: forming an amorphous silicon layer on the gate insulating layer; and etching An amorphous silicon layer is described to form a semiconductor layer of the thin film transistor.
  • the touch control line of the array substrate of the touch panel of the present invention can transmit the common voltage and the touch signal, so that no additional driving signal line is needed to transmit the touch signal. Therefore, the problem that the touch panel of the prior art increases the width of the bezel due to the setting of the driving signal line can be avoided.
  • the touch control line is made of the third metal layer, the problem of parasitic capacitance due to the additional provision of the driving signal line is reduced.
  • the touch electrode layer is made of indium tin oxide or metal, which can increase touch sensitivity.
  • FIG. 1 is a schematic diagram of a display device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing the distribution of touch capacitance of a touch area of a display device according to an embodiment of the invention.
  • Fig. 3 is a cross-sectional view showing a touch panel of the first embodiment of the present invention.
  • 4 to 11 are schematic views showing the fabrication of the array substrate of the touch panel of FIG. 3.
  • FIG. 1 is a schematic diagram of a display device 10 according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram showing a distribution of touch capacitances of the touch area 50 of the display device 10 according to an embodiment of the invention.
  • the display device 10 includes a touch panel 100, which is a liquid crystal display panel having a touch function.
  • the touch panel 100 includes a display area 30 and a touch area 50.
  • the display area 30 is used to display images, and the touch area 50 is used to detect the position of the finger touching the panel.
  • the display device 10 includes a gate driver 12, a timing controller 14, and a source driver (source) Driver)16.
  • the display area 30 is provided with a plurality of pixels arranged in a matrix, and each of the pixels includes three pixel units 20 respectively representing three primary colors of red, green and blue (RGB).
  • the gate driver 12 outputs a scan signal every fixed interval such that the transistors 22 of each row are sequentially turned on, and the source driver 16 outputs corresponding data signals to an entire column of pixel units 20 to charge them to respective required voltages.
  • the pixel unit 20 is caused to display different gray scales according to the voltage difference between the data signal and the common voltage Vcom.
  • the gate driver 12 turns off the scan signal of the row, and then the gate driver 12 outputs the scan signal to turn on the transistor 22 of the next row, and then the source driver 16 pairs the pixel unit 20 of the next row. Charge and discharge. This is continued until all the pixel units 20 are fully charged, and charging starts from the first line.
  • the touch area 50 is composed of a touch electrode layer 52 and a touch control line 53.
  • the touch electrode layer 52 includes a plurality of self-capacitive touch electrodes 521 insulated from each other.
  • a plurality of self-capacitive touch electrodes 521 are arranged in an array.
  • Each of the self-capacitive touch electrodes 521 may also have a circular shape, a triangular shape or the like.
  • Each self-capacitive touch electrode 521 is connected to a corresponding touch control line 53 , and the touch control line 53 is connected to the controller 14 to transmit the touch signal sensed by the self-capacitive touch electrode 521 to the control. 14.
  • the principle of the touch control of the plurality of self-capacitive touch electrodes 521 is: when the human body does not touch the screen, the capacitance sensed by the respective capacitive touch electrodes 521 is a fixed value, when the human body touches the screen, for example, the finger is on the screen.
  • the capacitance sensed by the self-capacitive touch electrode corresponding to the position where the finger touches the screen is changed by the influence of the human body, thereby determining the finger by detecting the change of the capacitance value of each of the capacitive touch electrodes 521 Touch the location to achieve touch functionality.
  • FIG. 3 is a cross-sectional view of the touch panel 100 according to the first embodiment of the present invention.
  • the touch panel 100 includes an array substrate 200, a color filter substrate 202, and a liquid crystal layer 204.
  • the array substrate 200 is used to set a plurality of pixel electrode layers 112, thin film transistors 22, and touch electrode layers 52.
  • the array substrate 200 includes a glass substrate 102, a first metal layer 104, a gate insulating layer 106, a second metal layer 108, an isolation layer 110, a passivation layer 122, a third metal layer 109, a pixel electrode layer 112, and a touch electrode layer. 52.
  • the first metal layer 104 is on the substrate 102 for forming the gate 22g of the thin film transistor 22.
  • the gate insulating layer 106 is on the first metal layer 104.
  • a semiconductor layer formed of an amorphous silicon layer is located on the gate insulating layer 106 as a channel 22c of the thin film transistor 22.
  • the second metal layer 108 is located on the gate insulating layer 106 for forming the source 22s and the drain 22d of the thin film transistor 22 and the data line 114.
  • the data line 114 is used for transmitting the data signal from the source driver 16 to the thin film transistor. twenty two.
  • the isolation layer 110 is located on the second metal layer 108 and is disposed through the first via hole 141 of the isolation layer 110. The first via hole 141 is aligned with the source 22s or the drain 22d.
  • the touch control line 53 formed by the third metal layer 109 is located above the data line 114.
  • the touch control line 53 is for transmitting the touch signal generated by the controller 14 and the common voltage Vcom.
  • a passivation layer 122 overlies the isolation layer 100.
  • the first via hole 142 penetrates the passivation layer 122
  • the second via hole 142 penetrates the passivation layer 122 to the surface of the touch control line 53 .
  • the pixel electrode layer 112 and the touch electrode layer 52 are both disposed above the passivation layer 122.
  • the pixel electrode layer 112 is connected to the source 22s or the drain 22d through the first via 141, and the touch electrode layer 52 is connected through the second via 142.
  • the touch electrode layer 52 and the pixel electrode layer 112 are simultaneously formed by a conductive layer.
  • the touch electrode layer 52 serves as a common electrode layer at the same time.
  • the controller 14 transmits a common voltage to the touch electrode layer 52 through the touch control line 53
  • the source driver 16 transmits the data voltage to the pixel electrode layer 112 through the data line 114 and the thin film transistor 22.
  • the data voltage applied to the pixel electrode layer 112 and the common voltage difference applied to the touch electrode layer 52 at this time may cause the liquid crystal molecules of the liquid crystal layer 204 between the pixel electrode layer 112 and the touch electrode layer 52 to rotate, and thus exhibit different Grayscale.
  • the controller 14 transmits the touch signal to the touch electrode layer 52 through the touch control line 53
  • the data line 114 stops transmitting the data voltage to the pixel electrode layer 112.
  • the touch electrode layer 52 of the present embodiment acts as a common electrode to receive a common voltage when the image is displayed, and is used as a touch electrode to transmit a touch signal during the touch detection phase.
  • the color filter substrate 202 of the present embodiment includes a color filter layer 116, a black matrix layer 118, and a glass substrate 120.
  • the color filter layer 116 is used to filter out light of different colors.
  • the black matrix layer 118 is used to block light leakage.
  • the spacer 206 serves to maintain the spacing between the array substrate 200 and the color filter substrate 202 to accommodate the liquid crystal layer 204.
  • the black matrix layer 118 of the touch control line 53 on the color filter substrate 202 is in a vertical projection area on the array substrate 200 to reduce the influence of the touch control line 53 on the aperture ratio.
  • FIG. 4 to FIG. 11 are schematic diagrams showing the array substrate 200 of the touch panel 100 of FIG. 3 .
  • a glass substrate 102 is first provided, followed by a metal thin film deposition process to form a first metal layer (not shown) on the surface of the glass substrate 102, and the first mask is used to perform the first photolithography etching.
  • the gate 22g of the thin film transistor 22 and the scanning line (not shown) are obtained by etching.
  • FIG. 4 does not depict scan lines, those skilled in the art will appreciate that gate 22g is substantially a portion of the scan line.
  • a gate insulating layer 106 made of silicon nitride (SiNx) is then deposited to cover the gate 22g.
  • amorphous silicon (a-Si, Amorphous) is deposited on the gate insulating layer 106.
  • the Si) layer is over the gate 22g.
  • a second mask is used to etch the amorphous silicon layer to constitute the semiconductor layer 22c.
  • the semiconductor layer 22c serves as a channel of the thin film transistor 22.
  • a second metal layer (not shown) is deposited on the gate insulating layer 106, and is etched by a third mask, and the second metal layer is etched to form a source 22s of the thin film transistor 22.
  • Data line 114 is directly connected to source 22s, and those skilled in the art will appreciate that source 22s is substantially part of data line 114. Further, the positions of the source 22s and the drain 22d may also be reversed.
  • a spacer layer 110 made of a soluble polytetrafluoroethylene (PFA) is deposited, and the source 22s and the drain 22d and the data line 114 are covered, and the isolation layer 110 is etched by using a fourth mask.
  • the portion of the isolation layer 110 above the drain electrode 22d is removed to the surface of the drain electrode 22d to form a square first via hole 141 on the drain electrode 22d.
  • a groove 143 is formed above the data line 114. That is, the first via 141 is aligned with the drain 22d
  • a third metal layer (not shown) is formed on the isolation layer 110, and then the third metal layer is etched by the fifth mask to form the touch control line 53 at the position of the recess 143.
  • the touch control line 53 is for transmitting a touch signal and a common voltage.
  • a passivation layer 122 is deposited on the isolation layer 110 and the touch control line 53, and then the passivation layer 122 is etched by a sixth mask to form a first via 141 and a second pass through the passivation layer 122. Hole 142. The second through hole 142 is located above the touch control line 53.
  • indium tin oxide Indium tin Oxide, ITO
  • conductive layer of graphene or metal not shown.
  • the conductive layer is then etched using a seventh mask to simultaneously form the pixel electrode layer 112 and the touch electrode layer 52.
  • the pixel electrode layer 112 is electrically connected to the drain 22d of the thin film transistor 22 through the first via hole 141 formed in advance.
  • the touch electrode layer 52 is connected to the touch control line 53 through a second through hole 142 formed in advance.
  • the pixel electrode layer 112 constitutes a plurality of pixel electrodes
  • the touch electrode layer 52 constitutes a plurality of touch electrodes
  • a plurality of pixel electrodes and a plurality of touch electrodes are alternately formed on the passivation layer 122.
  • the array substrate 200 of the present embodiment has been completed. Thereafter, after the color film substrate 202 and the liquid crystal layer 204 are combined, the touch panel 100 of the present embodiment can be formed.
  • the touch panel 100 may also be an organic light emitting diode (OLED) display panel or other display panel having a touch function.
  • OLED organic light emitting diode
  • the touch control line of the array substrate of the touch panel of the present invention can transmit the common voltage and the touch signal, so that no additional driving signal line is needed to transmit the touch signal. Therefore, the problem that the touch panel of the prior art increases the width of the bezel due to the setting of the driving signal line can be avoided.
  • the touch control line is made of the third metal layer, the problem of parasitic capacitance due to the additional provision of the driving signal line is reduced.
  • the touch electrode layer is made of indium tin oxide or metal, which can increase touch sensitivity.

Abstract

一种触摸面板（100），其包括：基板（102）；第一金属层（104），位于所述基板（102）上，用来形成薄膜晶体管（22）的栅极（22g）；栅级绝缘层（106），位于所述第一金属层（104）上；第二金属层（108），位于所述栅级绝缘层（106）上，用来形成数据线（114）、所述薄膜晶体管（22）的源极（22s）和漏极（22d）；隔离层（110），位于所述第二金属层（108）上，并设置贯穿所述隔离层（110）的第一通孔（141），所述第一通孔（141）对准所述源极（22s）或漏极（22d）；第三金属层（109），位于所述隔离层（110）上，用来形成触控控制线（53）；钝化层（122），层叠于所述隔离层（110）上，并设置贯穿所述钝化层（122）的所述第一通孔（141）和第二通孔（142）；像素电极层（112），通过所述第一通孔（141）与所述源极（22s）或漏极（22d）连接；触控电极层（52），通过所述第二通孔（142）与所述触控控制线（53）连接。所述触控电极层（52）同时作为阵列基板（200）的公共电极层。

Description

触摸面板以及其制造方法 技术领域
本发明涉及电容式感应技术领域，特别是涉及使用电容式感应组件的触摸面板以及其制造方法。
 背景技术
液晶显示器具有低功耗、低闪烁度、画面色彩逼真等优点，被广泛应用于移动电话、相机、计算机屏幕、电视机等电子产品中，为目前主流的显示器。
触摸屏具有坚固耐用、反应速度快、节省空间、易于交流等优点，利用触控技术，用户只需要用手指轻碰触摸屏幕上的图形符号或文字即可实现对主机的操作，从而使得人机交互更为直截了当，极大方便对电脑操作不熟悉的用户。
目前，许多电子设备的屏幕都是将液晶显示技术和触控技术相结合，不仅具有液晶显示器的优点，同时实现触控操作，备受消费者欢迎。然而，现有的具有触摸功能的液晶显示器中，受液晶显示器本身结构的影响，用于实现触摸功能的触控电极通常是位于液晶显示面板的像素电极之下，如此一来容易导致触控电极难以感测用户的触摸操作，降低了触控的灵敏度。
此外，传统的电容式感应组件是把透明的第一导电线路和第二导电线路做成横竖交叠的类似菱形的形状，第一导电线路和第二导电线路分别与沿横向排列的驱动线和沿纵向排列的感测线连接。驱动线和感测线在彼此交叉的位置会产生寄生电容，因此会影响像素的开口率。另外，大量的驱动线设置在面板主动区(Active area)的一侧会增加显示器的边框宽度，因此不利于窄边框的显示器。
 技术问题
因此，本发明的目的是提供一种内嵌式触摸面板，将自容式触控面板和水平切换式(In plane switching，IPS)面板整合在一起，以解决上述技术问题。
 技术解决方案
本发明另提供一种触摸面板，其包括：基板；第一金属层，位于所述基板上，用来形成薄膜晶体管的栅极；栅级绝缘层，位于所述第一金属层上；第二金属层，位于所述栅级绝缘层上，用来形成所述数据线、所述薄膜晶体管的源极和漏极；隔离层，位于所述第二金属层上，并设置贯穿所述隔离层的第一通孔，所述第一通孔对准所述源极或漏极；第三金属层，位于所述隔离层上，用来形成触控控制线，所述触控控制线用于传送触控信号以及公共电压；钝化层，层叠于所述隔离层上，并设置贯穿所述钝化层的所述第一通孔和第二通孔，所述第二通孔对准所述数据线；像素电极层，通过所述第一通孔与所述源极或漏极连接；触控电极层，通过所述第二通孔与所述触控控制线连接；其中，所述触控电极层同时作为所述阵列基板的公共电极层。
依据本发明的实施例，所述像素电极层和所述触控电极层是由一导电层同时形成。
依据本发明的实施例，所述导电层是氧化铟锡或是金属构成。
依据本发明的实施例，所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
依据本发明的实施例，当所述触控控制线传送所述公共电压至所述触控电极层时，所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
依据本发明的实施例，当所述触控控制线传送所述触控信号至所述触控电极层时，所述数据线停止通过所述薄膜晶体管传递数据电压至所述像素电极层。
本发明又提供一种制造触摸面板的方法，其包括：形成第一金属层于基板上；蚀刻所述第一金属层以形成薄膜晶体管的栅极；形成栅级绝缘层于所述薄膜晶体管的栅极上；形成第二金属层于所述栅级绝缘层上；蚀刻所述第二金属层以形成数据线、所述薄膜晶体管的源极和漏极；形成隔离层于所述数据线、所述薄膜晶体管的源极和漏极之上；蚀刻所述隔离层以形成贯穿所述隔离层的第一通孔，所述第一通孔对准所述源极或漏极；沉积第三金属层于所述隔离层上；蚀刻所述第三金属层以于所述数据线的上方形成触控控制线，所述触控控制线用于传送触控信号以及公共电压；沉积钝化层于所述隔离层和所述触控控制线上；蚀刻所述钝化层，以形成贯穿所述钝化层的所述第一通孔和第二通孔，所述第二通孔位于所述触控控制线的上方；沉积导电层于所述钝化层、所述触控控制线、所述源极或漏极上；蚀刻所述导电层以形成像素电极层和触控电极层，所述像素电极层通过所述第一通孔与所述源极或漏极连接，所述触控电极层通过所述第二通孔连接于所述触控控制线；其中，所述触控电极层同时作为所述阵列基板的公共电极层。
依据本发明的实施例，所述第三金属层和所述导电层是氧化铟锡或是金属构成。
依据本发明的实施例，在形成所述第二金属层于所述栅级绝缘层上的步骤之前，所述方法另包含：形成非晶硅层于所述栅级绝缘层上；及蚀刻所述非晶硅层以形成所述薄膜晶体管的半导体层。
有益效果
相较于现有技术，本发明的触摸面板的阵列基板的触控控制线可以传输公共电压和触控信号，因此不需额外增设驱动信号线来传输触控信号。所以可以避免现有技术的触控面板因设置驱动信号线而增加边框宽度的问题。另外，由于触控控制线利用第三金属层制成，因此减少因额外设置驱动信号线而产生寄生电容的问题。此外，触控电极层是由氧化铟锡或是金属构成，可以增加触控灵敏度。
附图说明
图1是本发明实施例的显示设备的示意图。
图2绘示本发明实施例显示设备的触控区的触控电容的分布示意图。
图3是本发明第一实施例的触摸面板的剖面图。
图4-图11绘示制造图3的触摸面板的阵列基板的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施之特定实施例。本发明所提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“水平”、“垂直”等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参阅图1和图2，图1是本发明实施例的显示设备10的示意图，图2绘示本发明实施例显示设备10的触控区50的触控电容的分布示意图。显示设备10包含触摸面板100，其为具有触控功能的液晶显示面板。触摸面板100包含显示区30以及触控区50。显示区30用来显示影像，触控区50用来侦测手指接触面板的位置。显示设备10包含栅极驱动器12、时序控制器14以及源极驱动器(source driver)16。显示区30设置数个呈矩阵排列的像素(pixel)，而每一个像素包含三个分别代表红绿蓝(RGB)三原色的像素单元20构成。栅极驱动器12每隔一固定间隔输出扫描信号使得每一行的晶体管22依序开启，同时源极驱动器16则输出对应的数据信号至一整列的像素单元20使其充电到各自所需的电压，使得像素单元20依据数据信号和公共电压Vcom的压差以显示不同的灰阶。当同一行充电完毕后，栅极驱动器12便将该行的扫描信号关闭，然后栅极驱动器12再输出扫描信号将下一行的晶体管22打开，再由源极驱动器16对下一行的像素单元20进行充放电。如此依序下去，直到所有像素单元20都充电完成，再从第一行开始充电。
参阅图2。触控区50是由触控电极层52和触控控制线53组成。触控电极层52包括多个相互绝缘的自电容式触控电极521。多个自电容式触控电极521呈阵列分布。每个自电容式触控电极521的形状还可以是圆形、三角形或其他形状。
每个自电容式触控电极521与相应的一条触控控制线53连接，触控控制线53连接至控制器14，以将自电容式触控电极521所感应到的触控信号传输至控制器14。多个自电容式触控电极521实现触控的原理是：当人体未触碰屏幕时，各自电容式触控电极521所感知的电容为一固定值，当人体触碰屏幕，例如手指在屏幕上操作时，手指触碰屏幕的位置所对应的自电容式触控电极感知的电容受人体的影响而发生变化，由此通过检测各自容式触控电极521的电容值变化即可判断出手指触摸的位置，从而实现触控功能。
请参阅图3，图3是本发明第一实施例的触摸面板100的剖面图。触摸面板100包括阵列基板200、彩膜基板202和液晶层204。阵列基板200用来设置数个像素电极层112、薄膜晶体管22以及触控电极层52。阵列基板200包括玻璃基板102、第一金属层104、栅级绝缘层106、第二金属层108、隔离层110、钝化层122、第三金属层109、像素电极层112及触控电极层52。第一金属层104位于基板102上，用来形成薄膜晶体管22的栅极22g。栅级绝缘层106位于第一金属层104上。非晶硅层形成的半导体层位于栅级绝缘层106上，做为薄膜晶体管22的信道22c。第二金属层108位于栅级绝缘层106上，用来形成薄膜晶体管22的源极22s和漏极22d和数据线114，数据线114用来传输源极驱动器16传来的数据信号至薄膜晶体管22。隔离层110位于第二金属层108上，并设置贯穿隔离层110的第一通孔141，第一通孔141对准源极22s或漏极22d。第三金属层109形成的触控控制线53位于数据线114的上方。触控控制线53用于传送由控制器14产生的触控信号以及公共电压Vcom。钝化层122覆盖于隔离层100之上。第一通孔142贯穿钝化层122，而第二通孔142贯穿钝化层122直至触控控制线53的表面。像素电极层112和触控电极层52皆位于钝化层122上方，像素电极层112通过第一通孔141与源极22s或漏极22d连接，触控电极层52通过第二通孔142连接于触控控制线53。触控电极层52与像素电极层112是由一导电层同时所形成。
本实施例中，触控电极层52同时作为公共电极层。一方面，当控制器14通过触控控制线53传送公共电压至触控电极层52时，源极驱动器16会通过数据线114和薄膜晶体管22传递数据电压至像素电极层112。此时施加于像素电极层112的数据电压和施加于触控电极层52的公共电压差会导致像素电极层112和触控电极层52之间的液晶层204的液晶分子转动，因而呈现不同的灰阶。另一方面，当控制器14通过触控控制线53传送触控信号至触控电极层52时，数据线114停止传递数据电压至像素电极层112。此时，当触控电极层52的触控电极521会将所感应到的触控信号传输至控制器54，像素电极层112和触控电极层52之间的液晶分子仍会保持之前的转动状态。也就是说，本实施例的触控电极层52在显示影像阶段时，会做为公共电极以接收公共电压；在触控侦测阶段时，会做为触控电极以传输触控信号。
本实施例的彩膜基板202包括彩色滤光层116、黑色矩阵层118和玻璃基板120。彩色滤光层116用来滤出不同颜色的光线。黑色矩阵层118用来遮挡漏光。间隙子206用来维持阵列基板200和彩膜基板202之间的间隔，以收容液晶层204。触控控制线53位于彩膜基板202上的黑色矩阵层118在阵列基板200上的垂直投影区域内，以减小触控控制线53对开口率的影响。
请参阅图4-图11，图4-图11绘示制造图3的触摸面板100的阵列基板200的示意图。如图4所示，首先提供一个玻璃基板102，接着进行一金属薄膜沉积制程，以于玻璃基板102表面形成第一金属层（未显示），并利用第一掩膜来进行第一微影蚀刻，以蚀刻得到薄膜晶体管22的栅极22g以及扫描线(未图示)。虽然图4并未标示出扫描线，但本领域的技术人员可以了解栅极22g实质上是扫描线的一部分。
请参阅图5，接着沉积以氮化硅(SiNx)为材质的栅级绝缘层106而覆盖栅极22g。
请参阅图6，于栅级绝缘层106上沉积非晶硅(a－Si，Amorphous Si)层于栅极22g上方。接着利用第二掩膜以蚀刻非晶硅层以构成半导体层22c。半导体层22c作为薄膜晶体管22的通道。
请参阅图7，于栅级绝缘层106上沉积第二金属层(未图示)，并利用第三掩膜进行微影蚀刻，蚀刻该第二金属层以形成薄膜晶体管22的源极22s、漏极22d以及数据线114。数据线114是直接连接到源极22s，本领域的技术人员可以了解源极22s实质上是数据线114的一部分。此外，源极22s和漏极22d的位置也可以对调。
请参阅图8，接着沉积以可溶性聚四氟乙烯(Polyfluoroalkoxy，PFA)为材质的隔离层110，并覆盖源极22s及漏极22d和数据线114，再利用第四掩膜蚀刻隔离层110，用以去除漏极22d上方的部份隔离层110，直至漏极22d表面，以于漏极22d上方形第一通孔141。同时在数据线114的上方形成凹槽143。也就是说，第一通孔141对准漏极22d
请参阅图9，在隔离层110上形成第三金属层(未图示)，接着利用第五掩膜蚀刻该第三金属层以在凹槽143的位置形成触控控制线53。触控控制线53用于传送触控信号以及公共电压。
请参阅图10，沉积钝化层122于隔离层110和触控控制线53上，接着利用第六掩膜蚀刻钝化层122以形成贯穿钝化层122的第一通孔141和第二通孔142。第二通孔142位于触控控制线53的上方。
请参阅图11，沉积以氧化铟锡物(Indium tin oxide，ITO)或石墨烯或金属为材质的导电层(未图示)。接着利用第七掩膜蚀刻该导电层以同时形成像素电极层112和触控电极层52。像素电极层112通过预先形成的第一通孔141与薄膜晶体管22的漏极22d电性连接。触控电极层52通过预先形成的第二通孔142与触控控制线53连接。像素电极层112构成数个像素电极，触控电极层52构成数个触控电极，数个像素电极和数个触控电极交替形成于钝化层122上。
至此，本实施例的阵列基板200已完成。之后在将彩膜基板202和液晶层204组合后，便可以形成本实施例的触摸面板100。
在其他实施方式中，触摸面板100还可以是具有触控功能的有机发光二极管(OLED)显示面板或其他显示面板。
相较于现有技术，本发明的触摸面板的阵列基板的触控控制线可以传输公共电压和触控信号，因此不需额外增设驱动信号线来传输触控信号。所以可以避免现有技术的触控面板因设置驱动信号线而增加边框宽度的问题。另外，由于触控控制线利用第三金属层制成，因此减少因额外设置驱动信号线而产生寄生电容的问题。此外，触控电极层是由氧化铟锡或是金属构成，可以增加触控灵敏度。
综上所述，虽然本发明已以较佳实施例揭露如上，但该较佳实施例并非用以限制本发明，该领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种触摸面板，其包括：
    基板；
    第一金属层，位于所述基板上，用来形成薄膜晶体管的栅极；
    栅级绝缘层，位于所述第一金属层上；
    第二金属层，位于所述栅级绝缘层上，用来形成所述数据线、所述薄膜晶体管的源极和漏极；
    隔离层，位于所述第二金属层上，并设置贯穿所述隔离层的第一通孔，所述第一通孔对准所述源极或漏极；
    第三金属层，位于所述隔离层上，用来形成触控控制线，所述触控控制线用于传送触控信号以及公共电压；
    钝化层，层叠于所述隔离层上，并设置贯穿所述钝化层的所述第一通孔和第二通孔，所述第二通孔对准所述数据线；
    像素电极层，通过所述第一通孔与所述源极或漏极连接；
    触控电极层，通过所述第二通孔与所述触控控制线连接；
    其中所述触控电极层同时作为所述阵列基板的公共电极层，所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层，
    其中当所述触控控制线传送所述公共电压至所述触控电极层时，所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层，当所述触控控制线传送所述触控信号至所述触控电极层时，所述数据线停止通过所述薄膜晶体管传递数据电压至所述像素电极层。
  2. 根据权利要求1所述的触摸面板，其中所述像素电极层和所述触控电极层是由导电层同时形成。
  3. 根据权利要求2所述的触摸面板，其中所述导电层是氧化铟锡或是金属构成。
  4. 一种触摸面板，其包括：
    基板；
    第一金属层，位于所述基板上，用来形成薄膜晶体管的栅极；
    栅级绝缘层，位于所述第一金属层上；
    第二金属层，位于所述栅级绝缘层上，用来形成所述数据线、所述薄膜晶体管的源极和漏极；
    隔离层，位于所述第二金属层上，并设置贯穿所述隔离层的第一通孔，所述第一通孔对准所述源极或漏极；
    第三金属层，位于所述隔离层上，用来形成触控控制线，所述触控控制线用于传送触控信号以及公共电压；
    钝化层，层叠于所述隔离层上，并设置贯穿所述钝化层的所述第一通孔和第二通孔，所述第二通孔对准所述数据线；
    像素电极层，通过所述第一通孔与所述源极或漏极连接；
    触控电极层，通过所述第二通孔与所述触控控制线连接；
    其中，所述触控电极层同时作为所述阵列基板的公共电极层。
  5. 根据权利要求4所述的触摸面板，其中所述像素电极层和所述触控电极层是由导电层同时形成。
  6. 根据权利要求5所述的触摸面板，其中所述导电层是氧化铟锡或是金属构成。
  7. 根据权利要求4所述的触摸面板，其中所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
  8. 根据权利要求7所述的触摸面板，其中当所述触控控制线传送所述公共电压至所述触控电极层时，所述数据线用来通过所述薄膜晶体管传递数据电压至所述像素电极层。
  9. 根据权利要求7所述的触摸面板，其中当所述触控控制线传送所述触控信号至所述触控电极层时，所述数据线停止通过所述薄膜晶体管传递数据电压至所述像素电极层。
  10. 一种制造触摸面板的方法，其包括：
    形成第一金属层于基板上；
    蚀刻所述第一金属层以形成薄膜晶体管的栅极；
    形成栅级绝缘层于所述薄膜晶体管的栅极上；
    形成第二金属层于所述栅级绝缘层上；
    蚀刻所述第二金属层以形成数据线、所述薄膜晶体管的源极和漏极；
    形成隔离层于所述数据线、所述薄膜晶体管的源极和漏极之上；
    蚀刻所述隔离层以形成贯穿所述隔离层的第一通孔，所述第一通孔对准所述源极或漏极；
    沉积第三金属层于所述隔离层上；
    蚀刻所述第三金属层以于所述数据线的上方形成触控控制线，所述触控控制线用于传送触控信号以及公共电压；
    沉积钝化层于所述隔离层和所述触控控制线上；
    蚀刻所述钝化层，以形成贯穿所述钝化层的所述第一通孔和第二通孔，所述第二通孔位于所述触控控制线的上方；
    沉积导电层于所述钝化层、所述触控控制线、所述源极或漏极上；
    蚀刻所述导电层以形成像素电极层和触控电极层，所述像素电极层通过所述第一通孔与所述源极或漏极连接，所述触控电极层通过所述第二通孔连接于所述触控控制线；
    其中，所述触控电极层同时作为所述阵列基板的公共电极层。
  11. 根据权利要求10所述的方法，其中所述第三金属层和所述导电层是氧化铟锡或是金属构成。
  12. 根据权利要求10所述的方法，其中在形成所述第二金属层于所述栅级绝缘层上的步骤之前，所述方法另包含：
    形成非晶硅层于所述栅级绝缘层上；及
    蚀刻所述非晶硅层以形成所述薄膜晶体管的半导体层。
PCT/CN2016/074509 2016-01-19 2016-02-25 触摸面板以及其制造方法 WO2017124605A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/030,745 US20180046289A1 (en) 2016-01-19 2016-02-25 Touch panel and method of fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610035889.6A CN105629546A (zh) 2016-01-19 2016-01-19 触摸面板以及其制造方法
CN201610035889.6 2016-01-19

Publications (1)

Publication Number Publication Date
WO2017124605A1 true WO2017124605A1 (zh) 2017-07-27

Family

ID=56044642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/074509 WO2017124605A1 (zh) 2016-01-19 2016-02-25 触摸面板以及其制造方法

Country Status (3)

Country Link
US (1) US20180046289A1 (zh)
CN (1) CN105629546A (zh)
WO (1) WO2017124605A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106445251B (zh) * 2016-12-27 2019-09-10 武汉华星光电技术有限公司 内嵌式触控面板及其阵列基板
CN108255353B (zh) * 2016-12-29 2021-04-02 南京瀚宇彩欣科技有限责任公司 内嵌式触控显示面板
CN108563352B (zh) * 2018-02-01 2021-02-02 京东方科技集团股份有限公司 一种触控显示基板、制作方法、触控显示装置及驱动方法
TWI677812B (zh) * 2018-11-01 2019-11-21 友達光電股份有限公司 觸控顯示面板
CN109634458B (zh) * 2018-12-04 2022-04-15 业成科技（成都）有限公司 触控面板及其制造方法
CN110928088A (zh) * 2019-12-05 2020-03-27 武汉华星光电技术有限公司 阵列基板及显示面板
JP2022114193A (ja) * 2021-01-26 2022-08-05 シャープディスプレイテクノロジー株式会社 タッチセンサ機能付き表示パネル及びタッチセンサ機能付き表示パネルの製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503648A (zh) * 2015-01-09 2015-04-08 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104536630A (zh) * 2015-01-21 2015-04-22 京东方科技集团股份有限公司 一种触摸显示面板、其检测方法及显示装置
CN104571765A (zh) * 2015-01-09 2015-04-29 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104657024A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN204440372U (zh) * 2015-03-13 2015-07-01 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104777637A (zh) * 2015-05-08 2015-07-15 上海中航光电子有限公司 阵列基板、触控显示装置及其测试方法
US20150268796A1 (en) * 2014-03-24 2015-09-24 Japan Display Inc. Display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101230196B1 (ko) * 2010-10-29 2013-02-06 삼성디스플레이 주식회사 터치 스크린 패널 내장형 액정표시장치
CN104460080A (zh) * 2014-12-04 2015-03-25 深圳市华星光电技术有限公司 触控显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150268796A1 (en) * 2014-03-24 2015-09-24 Japan Display Inc. Display device
CN104503648A (zh) * 2015-01-09 2015-04-08 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104571765A (zh) * 2015-01-09 2015-04-29 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104536630A (zh) * 2015-01-21 2015-04-22 京东方科技集团股份有限公司 一种触摸显示面板、其检测方法及显示装置
CN104657024A (zh) * 2015-03-13 2015-05-27 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN204440372U (zh) * 2015-03-13 2015-07-01 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN104777637A (zh) * 2015-05-08 2015-07-15 上海中航光电子有限公司 阵列基板、触控显示装置及其测试方法

Also Published As

Publication number Publication date
CN105629546A (zh) 2016-06-01
US20180046289A1 (en) 2018-02-15

Similar Documents

Publication Publication Date Title
US10613664B2 (en) Display device with built-in touch screen and method of fabricating the same
WO2017124604A1 (zh) 触摸面板以及其制造方法
US9619063B2 (en) Array substrate and manufacturing method thereof, and touch display device
WO2017124607A1 (zh) 触摸面板以及其制造方法
WO2017124605A1 (zh) 触摸面板以及其制造方法
US8659564B2 (en) Touch sensible display device having reduced number of image data lines
CN102566171B (zh) 液晶显示设备和制造该液晶显示设备的方法
TWI496044B (zh) 觸控裝置、其觸控顯示器及其電子裝置
WO2016033928A1 (zh) 显示面板及其驱动方法、显示装置
KR101451938B1 (ko) 터치스크린 내장형 표시 패널
WO2015176459A1 (zh) 触控显示面板及其制作方法、触控显示装置
WO2014000382A1 (zh) 触摸面板、触摸显示面板、触摸检测及显示方法
KR20160141305A (ko) 인셀 터치 액정 디스플레이 장치와 그 제조방법
KR20100062086A (ko) 터치 스크린 표시 장치 및 그 제조 방법
JP2016126321A (ja) インセルタッチ液晶ディスプレイ装置及びその製造方法
WO2018040233A1 (zh) 具有触控感测器的液晶显示装置及其驱动方法
CN103760703A (zh) 双栅面板内嵌式触控装置
CN104698675A (zh) 显示面板及其形成方法
WO2017045222A1 (zh) 一种触摸面板、阵列基板及其制造方法
US10564779B2 (en) Array substrate and manufacturing method thereof, and touch display device
WO2018209766A1 (zh) 一种触控显示面板
WO2015176437A1 (zh) 阵列基板及其制作方法、触控显示装置
US10775659B2 (en) Array substrate, display device and driving method thereof
WO2024046070A1 (zh) 阵列基板及其检测方法、显示装置
WO2018227913A1 (en) Touch control array substrate having a plurality of auxiliary conductive lines, and display apparatus thereof

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15030745

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16885878

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16885878

Country of ref document: EP

Kind code of ref document: A1