WO2017090889A1 - Cmp 슬러리 조성물 및 이를 이용한 유기막 연마방법 - Google Patents

Cmp 슬러리 조성물 및 이를 이용한 유기막 연마방법 Download PDF

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WO2017090889A1
WO2017090889A1 PCT/KR2016/011624 KR2016011624W WO2017090889A1 WO 2017090889 A1 WO2017090889 A1 WO 2017090889A1 KR 2016011624 W KR2016011624 W KR 2016011624W WO 2017090889 A1 WO2017090889 A1 WO 2017090889A1
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group
unsubstituted
substituted
polishing
organic film
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PCT/KR2016/011624
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English (en)
French (fr)
Korean (ko)
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강동헌
김정희
최정민
유용식
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삼성에스디아이 주식회사
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Priority to CN201680068602.8A priority Critical patent/CN109153907B/zh
Publication of WO2017090889A1 publication Critical patent/WO2017090889A1/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a CMP slurry composition and a method for polishing an organic film using the same.
  • the semiconductor manufacturing method includes forming an inorganic film such as a silicon oxide film and a silicon nitride film on a patterned silicon wafer, and gap-filling via-holes formed in the inorganic film. It includes a process to make.
  • the gap-filling process is a process for filling the via-holes with the organic film material, and after the gap-filling process, a process of removing and planarizing the excessively formed organic film should be accompanied.
  • the current spotlight is polishing by chemical mechanical polishing (CMP).
  • the conventional CMP slurry composition for organic films includes polymer abrasive particles because the organic film should be polished with a high polishing amount per unit time so as not to deteriorate the surface state such as scratches.
  • the desired polishing amount could not be obtained while increasing the flatness of the polishing surface.
  • the metal oxide abrasive grains used for polishing the metal film such as silicon are used for polishing the organic film, there is a problem that the semiconductor yield is lowered due to excessive polishing, low polishing surface flatness or scratches. .
  • an oxidizing agent containing a metal salt such as a ferric halide salt or a ferric nitrate salt together with the metal oxide abrasive, a technique for improving the polishing rate and the flatness of the polishing surface for the organic film Proposed.
  • ferric halogen salts or ferric nitrate salts are unstable in aqueous solution, when the above oxidizing agent is added to the slurry composition, iron particles precipitate and precipitate in the slurry, which causes the organic film to precipitate. Not only does the polishing rate decrease, but the problem of contaminating the slurry feeder arises.
  • Another object of the present invention is to suppress the precipitation of the oxidizing agent containing Fe ions in the slurry composition to maintain a stable polishing rate, it is possible to provide a CMP slurry composition for organic membranes that can prevent the slurry supply apparatus from being contaminated by iron To provide.
  • Still another object of the present invention is to provide a method for polishing an organic film using the CMP slurry composition for organic films according to the present invention.
  • the invention provides an oxidant comprising an iron component; Organic acids having one carboxyl group; And CMP slurry composition consisting of water.
  • the oxidant including the iron component may include a ferric halogen salt, a ferric nitrate salt, a ferric sulfate salt, a ferric phosphate salt, or a combination thereof.
  • the organic acid may include lactic acid, formic acid, acetic acid, propionic acid or a combination thereof.
  • the oxidant including the iron component and the organic acid having one carboxyl group may be included in a weight ratio of about 7.5: 1 to about 1.5: 1.
  • the CMP slurry composition may consist of about 0.001% to about 15% by weight of an oxidizing agent comprising the iron component, about 0.02% to about 0.5% by weight of an organic acid having one carboxyl group, and a balance of water. have.
  • the CMP slurry composition does not contain abrasive particles.
  • the CMP slurry composition may be for polishing an organic film.
  • the present invention provides a method for polishing an organic film comprising polishing the organic film using the CMP slurry composition.
  • the CMP slurry composition of this invention does not contain abrasive grains, it can suppress the generation
  • the CMP slurry composition of the present invention is a problem caused by the precipitation of iron in the slurry by stabilizing the oxidizing agent containing the iron by an organic acid containing one carboxyl group, that is, lowering the polishing rate and / or supply apparatus contamination Problems such as can be prevented from occurring, and the stability of the slurry is improved, which is advantageous for storage and transportation.
  • FIG. 1 is a schematic diagram of an organic film polishing method according to an embodiment of the present invention.
  • the CMP slurry composition of the present invention comprises (A) an oxidizing agent comprising an iron component, (B) an organic acid having one carboxyl group, and (C) water, and does not include abrasive particles.
  • the surface is soft, and when abrasive particles are used, there is a problem in that scratches occur on the surface of the organic film or excessive polishing occurs by the abrasive particles. However, if the abrasive particles are not used, there is a problem that polishing is not sufficiently performed.
  • the inventors of the present invention have repeatedly studied to solve the above problems, and when using an oxidizing agent having an iron component and an organic acid having one carboxyl group without using abrasive particles, the present inventors have excellent polishing properties for the organic film. It has been found that problems caused by the use of abrasive particles, such as scratching, can be solved, and the present invention has been completed. Since the CMP slurry composition of the present invention does not use abrasive particles, scratches are less generated when the organic film is applied, and thus the flatness is excellent, and the polishing rate with respect to the organic film is also excellent.
  • the CMP slurry composition of the present invention comprises an oxidant comprising an iron component.
  • the oxidizing agent oxidizes the surface layer of the organic film to cause polishing, and includes an iron component.
  • the oxidizing agent including the iron component may include, but is not limited to, for example, a ferric halogen salt, a ferric nitrate salt, a ferric sulfate salt, a ferric phosphate salt, or a combination thereof.
  • a ferric halogen salt for example, ferric halogen salt, a ferric nitrate salt, a ferric sulfate salt, a ferric phosphate salt, or a combination thereof.
  • ferric chloride, ferric nitrate, ferric sulfate, ferric phosphate, etc. are mentioned.
  • the oxidizing agent may be included in about 0.001% to about 15% by weight, for example about 0.01% to about 5% by weight, for example about 0.05% to about 3% by weight of the CMP slurry composition. It is possible to maintain excellent etching property to the organic film in the above range.
  • the CMP slurry composition of this invention contains the organic acid which has one carboxy group.
  • the organic acid is to stabilize the oxidizing agent including the iron component to prevent the precipitation of iron in the slurry, and to improve the polishing properties of the slurry composition.
  • the organic acid used in the present invention has one carboxyl group, and may include, for example, lactic acid, formic acid, acetic acid, propionic acid, or a combination thereof, but is not limited thereto.
  • the polishing rate for the organic film is significantly reduced, and precipitation of iron particles occurs when the organic acid is not included. It was. However, when an organic acid having one carboxyl group was used, the polishing rate for the organic film was excellent at 1000 mW / min or more, and no iron particle precipitation occurred.
  • the organic acid having one carboxyl group is from about 0.02% to about 0.5% by weight, preferably from about 0.03% to about 0.2% by weight, more preferably from about 0.04% to about 0.1 in the slurry composition. It may be included in weight percent. In this range, both polishing rate and slurry stability are excellent.
  • the oxidizing agent including the iron component and the organic acid having one carboxyl group may be included in a weight ratio of about 7.5: 1 to about 1.5: 1, preferably, about 5: 1 to about 2: 1, more preferably May be included in a weight ratio of about 2.5: 1 to about 2: 1. It is possible to maintain the stability of the oxidizing agent and a high organic film polishing rate in the above range.
  • the CMP slurry composition of the present invention is used by dissolving an oxidizing agent and an organic acid in water.
  • the water may be deionized water, but is not limited thereto.
  • the content of water is added so as to be 100% by weight in combination with the contents of the oxidizing agent and the organic acid.
  • the CMP slurry composition according to the present invention may be for polishing an organic film.
  • EMBODIMENT OF THE INVENTION Hereinafter, the organic film which is a grinding
  • substituted means that at least one hydrogen atom of the functional group is a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, an amino group, a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, and a C3 to C3 group.
  • C30 cycloalkyl group C3 to C30 cycloalkenyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C20 heteroalkyl group, C2 to C30 heterocycloalkyl group, C2 to C30 heterocycloalkenyl group, C2 to C30 heteroaryl group , C2 to C30 heteroarylalkyl group, C1 to C20 alkylamine group, C1 to C30 alkoxy group, C6 to C30 aryloxy group, C1 to C20 aldehyde group, C1 to C40 alkylether group, C7 to C20 arylalkylene ether group, C1 To C30 haloalkyl group, a functional group including P, a functional group including B, or a combination thereof.
  • “functional group including P” may be represented by the following Chemical Formula A
  • “functional group including B” may be represented by the following Chemical Formula B:
  • n is 0 or 1
  • m is an integer of 0 to 10
  • R a , R b , R c and R d are each independently hydrogen, hydroxyl, substituted or Unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C1 to C20 haloalkyl group, substituted or unsubstituted C1 to C20 alkylsulfonate group, substituted or unsubstituted C1 to C20 alkylsulfonyl group, substituted or unsubstituted C2 to C20 alkylamide group, substituted or unsubstituted C3 to C20 alkyl ester group, substituted or Unsubstituted C2 to C20 cyanoalkyl group,
  • the "functional group containing B ' is a B and O Examples of the functional group include -B (OH) 2 , -B (H) (CH 3 ), -B (CH 2 CH 3 ) 2 , and the like.
  • the organic film fills the generated via-holes.
  • the CMP slurry composition should be able to polish the organic film to a sufficient polishing rate and increase the flatness of the polished surface to remove the residues remaining in the inorganic film after polishing.
  • the inorganic film may be a film formed of at least one of silicon oxide and silicon nitride, but is not limited thereto.
  • the inorganic membrane may have a carbon content of about 1 atom% or less, for example 0 to about 1 atom%, or for example 0 atom%.
  • the organic film may have a large difference in polishing amount per unit time and flatness after polishing depending on the material of the organic film.
  • the organic film CMP slurry composition of the present invention is a composition for polishing an organic film having a high carbon content, and may increase the polishing amount per unit time of the organic film during the polishing of the organic film and have a high selectivity to the inorganic film.
  • the organic film can have a carbon content of at least about 90 atom%, such as from about 90 atom% to about 99 atom% or, for example, from about 95 atom% to about 99 atom%, polishing with ceria in the above range.
  • the polishing amount is high, no scratch occurs, and the polishing surface may have high flatness.
  • the organic film has a film density of about 0.5 g / cm 3 To about 2.5 g / cm 3 For example, about 1.0 g / cm 3 To about 2.0g / cm 3, for example, from about 1.2 g / cm 3 It may be from about 1.6g / cm 3 , in the above range when polishing with ceria, the polishing amount is high, the scratch does not occur and the flatness of the polishing surface may also be high.
  • the organic film may have a hardness of about 0.4 GPa or more, for example about 1.0 GPa or more, for example about 1.3 GPa or more, for example, about 1.3 GPa to about 1.5 GPa, and when polished with ceria in the above range, The polishing amount is high, no scratch occurs, and the flatness of the polishing surface may be high.
  • the organic film to be polished of the present invention may have an acid value of substantially 0 mgKOH / g.
  • an organic film CMP slurry composition including a conventional polymer abrasive there is a problem that the polishing rate is lowered.
  • the CMP slurry composition of the present invention can secure the amount of polishing per unit time of the organic film applicable to the CMP process.
  • the term “substantially” includes not only the case where the acid value is 0 mgKOH / g but also a slight error at 0 mgKOH / g.
  • the organic film to be polished of the present invention may be prepared by applying a composition for forming an organic film on an inorganic film and then thermosetting (baking) at a high temperature, for example, about 200 ° C to about 400 ° C.
  • the organic film forming composition may include a compound having a substituted or unsubstituted aromatic group.
  • the "compound having a substituted or unsubstituted aromatic group” refers to a compound that does not decompose even after thermal curing, so that the organic film formed of the composition can exhibit a high carbon content.
  • the unsubstituted aromatic group means a single or fused polycyclic aromatic group having 6 to 100 carbon atoms, for example, 6 to 50 carbon atoms, and specifically, may include units of the following Chemical Formulas 1-1 to 1-26.
  • composition for organic film formation containing the compound which has a substituted or unsubstituted aromatic group is demonstrated in detail.
  • the composition for forming an organic layer may include a material having a substituted or unsubstituted aromatic group, and a material including a unit represented by Formula 2 below:
  • a is 1 ⁇ a ⁇ 190
  • R 1 is hydrogen, a hydroxy group, a halogen atom, an allyl group, thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group , Substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalky
  • R 2 is hydrogen, an amino group, a substituted or unsubstituted C 1 to C 20 alkoxy group, a substituted or unsubstituted C 6 to C 20 aryloxy group, a dialkylamino group (-NRR ′, where R and R ′ are independently of each other Or unsubstituted C1 to C10 alkyl group or substituted or unsubstituted C6 to C10 aryl group), hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or Unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycle
  • R 3 is substituted or unsubstituted
  • R 2 may be a substituted or unsubstituted C 1 to C 10 alkoxy group.
  • composition for forming an organic film including Chemical Formula 2 may increase carbon content, film density, and hardness after thermosetting, and refer to Korean Patent No. 10-0866015 for a more detailed manufacturing method thereof.
  • the composition for forming an organic film according to the first embodiment may further include at least one of a crosslinking component, an acid catalyst, and an organic solvent, in addition to the material containing Chemical Formula 2. Specifically, about 1% to about 20% by weight of the material including the unit represented by Formula 2, about 0.1% to about 5% by weight of the crosslinking component, about 0.001% to about 0.05% by weight of the acid catalyst, and the organic solvent About 75% to about 98.8% by weight.
  • the crosslinking component may be a melamine resin (eg, N-methoxymethyl-melamine resin, N-butoxymethylmelamine resin), methylated or butylated urea resin, amino resin, glycoluril derivative of Formula 3, Bisepoxy compound, may include one or more of the melamine derivative of formula (5):
  • Acid catalysts include p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl of euphonic acid It may include one or more of the esters.
  • the organic solvent is not particularly limited as long as it is an organic solvent having sufficient solubility in a compound having a substituted or unsubstituted aromatic group, and examples thereof include propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate and the like.
  • the organic film forming composition of the first embodiment may be coated with a thickness of about 500 kPa to about 4000 kPa, and thermally cured at about 200 ° C. to about 400 ° C. for about 10 seconds to about 10 minutes to form an organic film, but is not limited thereto. Do not.
  • the composition for forming an organic film may be a compound having a substituted or unsubstituted aromatic group and may include a material represented by the following formula (6):
  • R 4 to R 9 , X 1 to X 6 are each independently hydrogen, hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or Unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycle Alkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted
  • n 1 to n 6 are each independently in a range of 0 to 2, and 2 ⁇ n 1 + n 2 + n 3 + n 4 + n 5 + n 6 ⁇ 6 .
  • R 4 to R 9 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It may be an unsubstituted C3 to C20 cycloalkenyl group, a functional group including P, or a functional group including B.
  • X 1 to X 6 may be each independently hydrogen, a hydroxy group, a substituted or unsubstituted C 1 to C 20 alkylamine group, an amino group, a functional group including P, a functional group including B.
  • the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except for including the material represented by Chemical Formula 6 instead of the material represented by Chemical Formula 2. Therefore, hereinafter, only the substance represented by Chemical Formula 6 will be described.
  • the material represented by Chemical Formula 6 may be a mixture of two or more compounds having different positions of substituents, and may include an aromatic ring having strong absorption in a short wavelength region (eg, 193 nm and 248 nm), even if no special catalyst is used. Since the crosslinking reaction proceeds at a high temperature, it is possible to prevent contamination by a catalyst, especially an acid, and the aromatic group compound of Chemical Formula 6 may have an average molecular weight of about 500 to about 4000. Can be formed.
  • the material represented by Chemical Formula 6 may increase carbon content, film density, and hardness after thermal curing of the organic film composition.
  • the material represented by Chemical Formula 6 may be prepared by a conventional method, for example, it may be prepared by reacting and reducing acetyl chloride, benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
  • acetyl chloride benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited.
  • Korea Patent Registration No. 10-1311942 For more detailed manufacturing method refer to Korea Patent Registration No. 10-1311942.
  • the organic film composition may include an aromatic group-containing polymer selected from (i), (ii) and (iii) as a compound having a substituted or unsubstituted aromatic group:
  • R 10 is substituted or unsubstituted
  • any one of R is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 To C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group , Substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or un
  • R 11 is hydrogen, a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or Unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or
  • R 12 is substituted or unsubstituted
  • R 13 is substituted or unsubstituted
  • any one of R is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 To C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group , Substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or un
  • R 14 is substituted or unsubstituted
  • R 15 is substituted or unsubstituted
  • any one of R is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 To C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group , Substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or un
  • R at R 10 , R 13 and R 15 are each independently hydrogen, hydroxy group, halogen atom, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted or Unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 Heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstitute
  • the compound having a substituted or unsubstituted aromatic group is substantially the same as the organic film composition of the first embodiment except that the aromatic group-containing polymer is included in place of the material represented by Chemical Formula 2. Therefore, hereinafter, only the aromatic group-containing polymer will be described.
  • the aromatic group-containing polymer may increase carbon content, film density and hardness after thermal curing of the organic film composition, and may be prepared by a conventional method, and refer to Korean Patent No. 10-0908601 for more details.
  • the organic film composition is a compound having a substituted or unsubstituted aromatic group material comprising a unit represented by the formula (2); A substance represented by Chemical Formula 6; It may contain two or more of the aromatic group-containing polymers selected from the above (i), (ii) and (iii). It is substantially the same as the composition of the first embodiment except that it contains two or more kinds.
  • the organic film polishing method of the present invention includes polishing an organic film using a CMP slurry composition, wherein the CMP slurry composition is a CMP slurry composition according to the present invention, that is, an oxidizing agent containing an iron component, one carboxyl group CMP slurry composition consisting of an organic acid and water having.
  • the CMP slurry composition is a CMP slurry composition according to the present invention, that is, an oxidizing agent containing an iron component, one carboxyl group CMP slurry composition consisting of an organic acid and water having.
  • FIG. 1A illustrates a stacked state of a silicon wafer, an inorganic film, and an organic film prior to polishing an organic film.
  • the silicon wafer 100 is patterned in an intaglio to locally form recesses, and the inorganic wafer is formed on the silicon wafer 100.
  • the film 110 is deposited, and the organic film 120 is coated on the inorganic film and thermally cured at 200 ° C to 400 ° C.
  • T represents an imaginary polishing stop line.
  • polishing is performed by rotating the silicon wafer 100 and polishing until the polishing stop line T is reached. Polish to the polishing stop line T of 1 (b).
  • a silica film having a thickness of 500 mV was deposited on the pattern wafer having the negative pattern formed on the surface thereof, and an organic film having a thickness of 1400 mV was formed to fill the negative pattern formed on the surface of the silica film.
  • the organic film was prepared by applying the composition for forming an organic film (T4 of SDI Co., Ltd.) on a silica film and thermosetting at 400 ° C.
  • Citric acid (b5) Citric acid (Samjeon Pure Chemical Co., Ltd.) was used.
  • the patterned wafer on which the silica film and the organic film prepared in Preparation Example were formed was polished under the following conditions, and then the polishing rate was measured.
  • FUJIBO H0800 CMP pad was used as the polishing pad.
  • As a grinding machine 200mm MIRRA equipment from Applied Materials (AMAT) was used, and polishing was performed for 1 minute at a lower pressure of 1 psi, a slurry flow rate of 200 mL / minute, a platen speed of 100 rpm, and a head speed of 90 rpm. was performed.
  • the thickness (unit: mm) of the polishing film was measured on the polished surface using a thin film thickness meter (ST4000, K-MAC), and the polishing rate (unit: mm / min) was measured from the measured thickness.
  • the polishing rate (unit: mm / min) was measured from the measured thickness.
  • the number of defects on the polished surface of the wafer polished under the polishing conditions was measured using a Defect measuring instrument (Hitachi, LS6800).
  • the polishing rate for the organic film was excellent, the stability of the CMP slurry was excellent, and scratching occurred during polishing. Effectively suppressed.
  • the stability of the CMP slurry was inferior.
  • Comparative Examples 2 to 4 using organic acids having two or more carboxyl groups the polishing rate for the organic film was significantly low.
  • scratch generation was significantly increased.

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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
PCT/KR2016/011624 2015-11-26 2016-10-17 Cmp 슬러리 조성물 및 이를 이용한 유기막 연마방법 WO2017090889A1 (ko)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040055042A (ko) * 2002-12-20 2004-06-26 주식회사 동진쎄미켐 금속막의 화학-기계적 연마 슬러리 조성물
KR20060099313A (ko) * 2005-03-11 2006-09-19 삼성전자주식회사 산화막 연마억제제를 함유하는 화학 기계 연마 슬러리
KR20100028072A (ko) * 2010-01-11 2010-03-11 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물을 이용한 연마 방법
KR20140030792A (ko) * 2012-09-03 2014-03-12 에스케이하이닉스 주식회사 유기 절연막 연마용 슬러리 및 이를 이용한 기판 연마 방법
KR20150115824A (ko) * 2013-01-30 2015-10-14 캐보트 마이크로일렉트로닉스 코포레이션 지르코니아 및 금속 산화제를 함유하는 화학적-기계적 연마 조성물

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383857A (en) * 1980-05-28 1983-05-17 The United States Of America As Represented By The United States Department Of Energy Attack polish for nickel-base alloys and stainless steels
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
CN1092698C (zh) * 1998-08-04 2002-10-16 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
JP2000077365A (ja) * 1998-08-29 2000-03-14 Tokyo Electron Ltd 研磨スラリー及び研磨方法
CN1126152C (zh) * 1998-08-31 2003-10-29 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
US6830503B1 (en) * 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
TWI288772B (en) * 2003-01-24 2007-10-21 Rohm & Haas Elect Mat Tungsten polishing solution
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
DE102005031469A1 (de) * 2005-07-04 2007-01-11 Merck Patent Gmbh Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
JP4868840B2 (ja) * 2005-11-30 2012-02-01 Ｊｓｒ株式会社 半導体装置の製造方法
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
JP2009088243A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 研磨液
CN102101982A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
JP5767796B2 (ja) * 2010-09-28 2015-08-19 林純薬工業株式会社 エッチング液組成物およびエッチング方法
CN104400624B (zh) * 2014-10-20 2016-11-23 南京航空航天大学 固结磨料化学机械抛光铜的加工方法
KR102259145B1 (ko) * 2015-03-26 2021-06-01 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040055042A (ko) * 2002-12-20 2004-06-26 주식회사 동진쎄미켐 금속막의 화학-기계적 연마 슬러리 조성물
KR20060099313A (ko) * 2005-03-11 2006-09-19 삼성전자주식회사 산화막 연마억제제를 함유하는 화학 기계 연마 슬러리
KR20100028072A (ko) * 2010-01-11 2010-03-11 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물을 이용한 연마 방법
KR20140030792A (ko) * 2012-09-03 2014-03-12 에스케이하이닉스 주식회사 유기 절연막 연마용 슬러리 및 이를 이용한 기판 연마 방법
KR20150115824A (ko) * 2013-01-30 2015-10-14 캐보트 마이크로일렉트로닉스 코포레이션 지르코니아 및 금속 산화제를 함유하는 화학적-기계적 연마 조성물

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