WO2017056994A1 - Composition thermodurcissable, feuille et procédé pour un dispositif de fabrication - Google Patents

Composition thermodurcissable, feuille et procédé pour un dispositif de fabrication Download PDF

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Publication number
WO2017056994A1
WO2017056994A1 PCT/JP2016/077116 JP2016077116W WO2017056994A1 WO 2017056994 A1 WO2017056994 A1 WO 2017056994A1 JP 2016077116 W JP2016077116 W JP 2016077116W WO 2017056994 A1 WO2017056994 A1 WO 2017056994A1
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Prior art keywords
thermosetting composition
sheet
electronic component
weight
composite
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PCT/JP2016/077116
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English (en)
Japanese (ja)
Inventor
豪士 志賀
智絵 飯野
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日東電工株式会社
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Priority to CN201680052778.4A priority Critical patent/CN108026354A/zh
Priority to SG11201802323SA priority patent/SG11201802323SA/en
Publication of WO2017056994A1 publication Critical patent/WO2017056994A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate

Definitions

  • the present invention relates to a thermosetting composition, a sheet, and a method for producing an apparatus.
  • the step of placing a sheet-like thermosetting composition on the electronic component, the step of softening the thermosetting composition, covering the electronic component with the thermosetting composition, and the electronic component with the thermosetting composition can be manufactured by a method including a step of causing curing of the thermosetting composition by heating the composite formed by the covering step.
  • thermosetting composition When the electronic component is covered with the thermosetting composition, gas may be trapped between the electronic component and the thermosetting composition. The gas moves, and irregularities and pinholes may be generated on the surface of the thermosetting composition after curing.
  • thermosetting composition may be generated on the surface of the thermosetting composition after curing.
  • the present invention solves the above-mentioned problems, and provides a thermosetting composition that can reduce the gas trapped between the electronic component and the thermosetting composition and can suppress the generation of flow marks. With the goal. Another object of the present invention is to provide a sheet that can reduce the gas trapped between the electronic component and the thermosetting composition and can suppress the generation of flow marks. It is another object of the present invention to provide a method for manufacturing a device having few internal voids and irregularities / pinholes / flow marks.
  • the present invention relates to a sheet-like thermosetting composition containing a phenol resin, an inorganic filler, and silicone-based particles.
  • thermosetting composition of the present invention the gas trapped between the electronic component and the thermosetting composition can be reduced. This is because the thermosetting composition has a high viscosity when the electronic component is covered with the thermosetting composition.
  • thermosetting composition of the present invention the generation of flow marks can also be suppressed. This is probably because the silicone particles suppress the gloss of the package surface.
  • the silicone-based particles have an epoxy group. This is because the strength of the thermosetting composition after curing can be increased.
  • the phenolic resin will bind to the silicone particles and bind the silicone rubber particles.
  • the present invention also relates to a sheet containing the thermosetting composition. Both sides of the thermosetting composition are defined by a first surface and a second surface facing the first surface.
  • the sheet of the present invention further includes a first separator provided on the first surface and a second separator provided on the second surface.
  • the present invention also relates to a device manufacturing method.
  • the manufacturing method of the apparatus of this invention includes the process of arrange
  • the composite includes an electronic component and a thermosetting composition that covers the electronic component.
  • the step of forming the composite includes a step of causing softening of the thermosetting composition.
  • the manufacturing method of the apparatus of this invention further includes the process of raise
  • FIG. 3 is a schematic cross-sectional view of a sheet according to Embodiment 1.
  • FIG. It is a schematic sectional drawing of the manufacturing process of an apparatus. It is a schematic sectional drawing of the manufacturing process of an apparatus. It is a schematic sectional drawing of the manufacturing process of an apparatus. It is a schematic sectional drawing of the process in the 1st manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 1st manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 1st manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 2nd manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 2nd manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 2nd manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 2nd manufacture example of a semiconductor device. It is a schematic sectional drawing of the process in the 2nd
  • the sheet 1 includes a sheet-like thermosetting composition 11. Both surfaces of the thermosetting composition 11 are defined by the first surface and the second surface facing the first surface.
  • the sheet 1 further includes a first separator 12 provided on the first surface. Examples of the first separator 12 include a polyethylene terephthalate (PET) film.
  • the sheet 1 further includes a second separator 13 provided on the second surface. Examples of the second separator 13 include a polyethylene terephthalate (PET) film.
  • thermosetting composition 11 examples include 100 ⁇ m and 200 ⁇ m.
  • examples of the upper limit of the thickness of the thermosetting composition 11 include 2000 ⁇ m and 1500 ⁇ m.
  • the minimum melt viscosity of the thermosetting composition 11 is preferably 100 Pa ⁇ s to 10,000 Pa ⁇ s. When it is 100 Pa ⁇ s or more, there is a tendency that the gas trapped between the electronic component and the thermosetting composition 11 is small. When the pressure is 10,000 Pa ⁇ s or less, there is a tendency that no space—an unfilled region—is generated between the electronic component and the thermosetting composition 11 during molding.
  • the thermosetting composition 11 includes silicone particles.
  • the silicone-based particles are preferably silicone elastomer particles.
  • the silicone-based particles have a group that reacts with at least one of a phenol resin and an epoxy resin.
  • the group that reacts with at least one of a phenol resin and an epoxy resin include an epoxy group.
  • the shape of the silicone-based particles is preferably spherical.
  • the average particle size of the silicone-based particles is preferably 20 ⁇ m or less, more preferably 10 ⁇ m or less. Examples of the lower limit of the average particle diameter of the silicone particles include 0.5 ⁇ m and 1 ⁇ m.
  • the total weight of the silicone-based particles is preferably 0.5% or more, more preferably 1%. That's it.
  • the total weight of the silicone-based particles is preferably 50% or less, more preferably 45% or less. is there. If it exceeds 50%, a space—an unfilled region—may remain between the electronic component and the thermosetting composition 11.
  • the thermosetting composition 11 includes an epoxy resin that is liquid at 25 ° C. and an epoxy resin that is solid at 25 ° C. By blending a liquid epoxy resin at 25 ° C., the thermosetting composition 11 can be produced by kneading extrusion using a roll kneader or the like.
  • the epochine equivalent of the epoxy resin that is liquid at 25 ° C. is preferably 100 g / eq or more, more preferably 120 g / eq or more.
  • the epoxy equivalent of the epoxy resin that is liquid at 25 ° C. is preferably 500 g / eq or less, more preferably 300 g / eq or less.
  • the epoxy equivalent can be measured by the method defined in JIS K 7236-2009.
  • Examples of the epoxy resin that is liquid at 25 ° C. include bisphenol A type epoxy resin.
  • Examples of the epoxy resin solid at 25 ° C. include an epoxy resin having an epoxy equivalent of 100 to 180 g / eq, an epoxy resin having an epoxy equivalent of 200 g / eq or more, and the like.
  • the thermosetting composition 11 preferably contains an epoxy resin having an epoxy equivalent of 100 to 180 g / eq and an epoxy resin having an epoxy equivalent of 200 g / eq or more. By blending an epoxy resin having an epoxy equivalent of 100 to 180 g / eq, the glass transition temperature of the thermosetting composition 11 after thermosetting can be increased.
  • Examples of the epoxy resin having an epoxy equivalent of 200 g / eq or more include a dicyclopentadiene type epoxy resin.
  • the total weight of the epoxy resin is preferably 20% or more.
  • the total weight of the epoxy resin is preferably 80% or less.
  • the thermosetting composition 11 contains a phenol resin.
  • the phenol resin include a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolac resin, and a resole resin. These phenolic resins may be used alone or in combination of two or more.
  • the hydroxyl equivalent of the phenol resin is preferably 70 to 250.
  • the softening point of the phenol resin is preferably 50 to 110 ° C.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the total weight of the phenol resin is preferably 5% or more, more preferably 10% or more.
  • the total weight of the phenol resin is preferably 60% or less, more preferably 40% or less.
  • the thermosetting composition 11 contains an inorganic filler.
  • the inorganic filler include quartz glass, talc, silica, alumina, boron nitride, aluminum nitride, and silicon carbide.
  • silica is preferable because the thermal expansion coefficient can be satisfactorily reduced.
  • fused silica is preferred, and spherical fused silica is more preferred.
  • Alumina, boron nitride, and aluminum nitride are preferred because of their high thermal conductivity.
  • the thermosetting composition 11 can contain one kind of inorganic filler. Two or more inorganic fillers can also be included.
  • the average particle diameter of the inorganic filler is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more.
  • the average particle diameter of the filler is preferably 30 ⁇ m or less.
  • the average particle diameter can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the thermosetting composition 11 is 55% by volume or more, more preferably 60% by volume or more, and still more preferably 70% by volume or more. By increasing the content of the inorganic filler, it is possible to bring the linear expansion coefficient of the cured thermosetting composition 11 closer to the linear expansion coefficient of the substrate or the like.
  • the content of the inorganic filler in the thermosetting composition 11 is preferably 85% by volume or less, more preferably 80% by volume or less. It is easy to shape
  • the content of the inorganic filler can be explained in units of “% by weight”. Typically, the silica content will be described in terms of “% by weight”.
  • the content of silica in the thermosetting composition 11 is preferably 60% by weight or more, more preferably 70% by weight or more, still more preferably 80% by weight or more, and further preferably 85% by weight or more.
  • the upper limit of the content of silica in the thermosetting composition 11 is, for example, 95% by weight.
  • the content of alumina is also described in “% by weight”.
  • the content of alumina in the thermosetting composition 11 is preferably 72% by weight or more, more preferably 80% by weight or more, and further preferably 87% by weight or more.
  • the content of alumina in the thermosetting composition 11 is preferably 95% by weight or less, more preferably 93% by weight or less.
  • the thermosetting composition 11 contains a silane coupling agent.
  • silane coupling agents include 3-glycidoxypropyltrimethoxysilane.
  • the thermosetting composition 11 includes a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin.
  • 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z) ), 2-heptadecylimidazole (trade name; C17Z), 1,2-dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (product) Name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl 2-Undecylim
  • 2-phenyl-4,5-dihydroxymethylimidazole 2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl) is preferable because the progress of the curing reaction at the kneading temperature can be suppressed.
  • -(1 ')]-Ethyl-s-triazine is more preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.
  • the content of the curing accelerator is preferably 0.2 parts by weight or more, more preferably 0.5 parts by weight or more, further preferably 0.8 parts by weight or more with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin. It is.
  • the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • thermosetting composition 11 contains carbon black.
  • the thermosetting composition 11 can be manufactured, for example, by a method including a step of forming a mixture obtained by kneading a phenol resin, an inorganic filler, silicone-based particles and the like into a sheet shape.
  • the upper limit of the temperature in kneading is, for example, 140 ° C or 130 ° C.
  • the lower limit of the temperature is, for example, 30 ° C. or 50 ° C.
  • the kneading time is preferably 1 to 30 minutes. It is preferable to knead under reduced pressure conditions (under reduced pressure atmosphere).
  • the pressure in the reduced pressure atmosphere is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
  • thermosetting composition 11 phenol resin, inorganic filler, silicone particles, etc.
  • a solvent for preparing a varnish
  • this varnish is applied onto a support, and a coating film
  • the thermosetting composition 11 can also be manufactured by drying.
  • the solvent include methyl ethyl ketone, ethyl acetate, toluene and the like.
  • the thermosetting composition 11 can be used for sealing electronic components.
  • the electronic component include a sensor, a MEMS (Micro Electro Mechanical Systems), a SAW (Surface Acoustic Wave) chip, a semiconductor element, a capacitor, and a resistor.
  • the sensor include a pressure sensor and a vibration sensor.
  • the semiconductor element include a semiconductor chip, an IC (integrated circuit), and a transistor.
  • the thermosetting composition 11 can be particularly preferably used for sealing a semiconductor element.
  • the device manufacturing method includes a step of disposing the thermosetting composition 11 on the electronic component 21. As shown in FIG. 3, the device manufacturing method further includes a step of forming the electronic component 21 and the composite 2 including the thermosetting composition 11 covering the electronic component 21. The device manufacturing method further includes a step of causing the thermosetting composition 11 to cure by heating the composite 2.
  • the device manufacturing method further includes a step of peeling the first separator 12 from the thermosetting composition 11 before the step of disposing the thermosetting composition 11 on the electronic component 21.
  • the step of disposing the thermosetting composition 11 on the electronic component 21 specifically includes the thermosetting composition 11 and the second separator 13 provided on the second surface of the thermosetting composition 11. This is a step of disposing the containing sheet on the electronic component 21.
  • the process of forming the composite 2 includes a step of causing the thermosetting composition 11 to soften.
  • the thermosetting composition 11 is preferably heated at 40 ° C. or higher, more preferably 50 ° C. or higher, and further preferably 60 ° C. or higher.
  • the thermosetting composition 11 is preferably heated at 150 ° C. or lower, more preferably 100 ° C. or lower, and further preferably 90 ° C. or lower.
  • the process of forming the composite 2 further includes a step of covering the electronic component 21 with the thermosetting composition 11.
  • the step of covering the electronic component 21 with the thermosetting composition 11 is a step of embedding the electronic component 21 in the thermosetting composition 11 under a reduced pressure atmosphere.
  • the reduced pressure atmosphere is, for example, an atmosphere of 0.1 kPa to 5 kPa, an atmosphere of 0.1 Pa to 100 Pa, or the like.
  • the composite 2 is preferably heated at 100 ° C. or higher, more preferably 120 ° C. or higher.
  • the composite 2 is preferably heated at 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the composite 2 after the step of causing the thermosetting composition 11 to cure includes an electronic component 21 and a cured thermosetting composition 31 that covers the electronic component 21.
  • the device manufacturing method includes a step of forming a wiring.
  • the laminated body 101 includes a temporary fixing body 141, a thermosetting composition 11 disposed on the temporary fixing body 141, and a second separator 13 disposed on the thermosetting composition 11. Including.
  • the laminate 101 is disposed between the lower heating plate 161 and the upper heating plate 162.
  • the temporarily fixed body 141 includes a support plate 142, an adhesive layer 143 disposed on the support plate 142, and a semiconductor chip 121 fixed to the adhesive layer 143.
  • Examples of the material of the pressure-sensitive adhesive layer 143 include a heat-peelable pressure-sensitive adhesive such as a heat-foamable pressure-sensitive adhesive.
  • the chip composite 102 is formed by heat-pressing the laminated body 101 in a reduced pressure atmosphere by a parallel plate method using a lower heating plate 161 and an upper heating plate 162.
  • the chip composite 102 includes a semiconductor chip 121 and the thermosetting composition 11 that covers the semiconductor chip 121.
  • the chip composite 102 is in contact with the adhesive layer 143.
  • the chip composite 102 is in contact with the second separator 13.
  • the second separator 13 is peeled from the chip composite 102. Curing of the thermosetting composition 11 occurs.
  • the pressure-sensitive adhesive layer 143 is heated, and the chip composite 102 is peeled from the pressure-sensitive adhesive layer 143.
  • wirings 171 and the like are formed. After the wiring 171 is formed, the chip composite 102 is diced. The semiconductor device is obtained by the above procedure.
  • the laminated structure 201 includes a mounting wafer 241, a thermosetting composition 11 disposed on the mounting wafer 241, and a second separator 13 disposed on the thermosetting composition 11. including.
  • the laminated structure 201 is disposed between the lower heating plate 261 and the upper heating plate 262.
  • the mounting wafer 241 includes a semiconductor wafer 242, a semiconductor chip 221, and an underfill material 243 sandwiched between the semiconductor wafer 242 and the semiconductor chip 221.
  • the semiconductor wafer 242 has electrodes.
  • a wafer composite 202 is formed by hot-pressing the laminated structure 201 by a parallel plate method using a lower heating plate 261 and an upper heating plate 262.
  • the wafer composite 202 includes a semiconductor wafer 242, a semiconductor chip 221, an underfill material 243 sandwiched between the semiconductor wafer 242 and the semiconductor chip 221, and the thermosetting composition 11 that covers the semiconductor chip 221.
  • Wafer composite 202 is in contact with second separator 13.
  • the second separator 13 is peeled from the wafer composite 202. Curing of the thermosetting composition 11 occurs. As shown in FIG. 10, the wafer composite 202 is ground. As shown in FIG. 11, wirings 271 and the like are formed. After forming the wiring 271 and the like, the wafer composite 202 is diced. The semiconductor device is obtained by the above procedure.
  • thermosetting composition 11 has a multilayer structure having a plurality of layers.
  • Epoxy resin 1 EPPN-501HY (Epokin equivalent 162 g / eq. To 172 g / eq. Epoxy resin having a softening point of 51 ° C. to 57 ° C.) manufactured by Nippon Kayaku Co., Ltd.
  • Epoxy resin 2 jER828 (Epkin equivalent 184 g / eq. To 194 g / eq., Bisphenol A type epoxy resin liquid at 25 ° C.)
  • Epoxy resin 3 HP7200 (dicyclopentadiene type epoxy resin having an epkin equivalent of 254 g / eq.
  • Silicone particles EP-2601 manufactured by Toray Dow Corning (spherical silicone elastomer particles having an epoxy group and an average particle diameter of 2 ⁇ m) Carbon black: # 20 manufactured by Mitsubishi Chemical Catalyst: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
  • thermosity A circular sample having a diameter of 25 mm was obtained by hollowing out the resin sheet.
  • the melt viscosity of the sample was measured using a viscoelasticity measuring device ARES (manufactured by Rheometrics Scientific). Specifically, the sample was sandwiched between parallel plates having a plate diameter of 25 mm, and the melt viscosity was measured at a heating rate of 10 ° C./min, a strain of 10%, and a frequency of 1 Hz. The lowest melt viscosity at 50 ° C. to 150 ° C. was defined as the minimum melt viscosity.
  • a laminated body was formed by laminating a disk-shaped resin on a “wafer with chips”. By pressing the laminated body with a flat plate pressing apparatus, a mirror wafer, 150 silicon chips with adhesive sheet fixed to the mirror wafer, and a protective resin with a thickness of 700 ⁇ m covering 150 silicon chips with adhesive sheet are provided. A structure was obtained.
  • the protective resin was cured by heating the structure at 180 ° C. for 2 hours using a hot air circulating dryer.
  • a hot air circulating dryer When at least one of the unevenness having a diameter of 1 mm or more and the pinhole having a diameter of 0.5 mm or more is on the surface of the protective resin after curing, it was determined as x. In the case where neither the unevenness having a diameter of 1 mm or more and the pinhole having a diameter of 0.5 mm or more were present, it was judged as “good”.
  • the protective resin was cured by heating the structure at 180 ° C. for 2 hours using a hot air circulating dryer. With respect to the heated structure, the internal voids and the unfilled region-internal space- were observed with an ultrasonic imaging device (FS200II manufactured by Hitachi Finetech). Observation was performed in the reflection mode using a 25 MHz probe. When there was at least either an internal void of 0.5 mm or more or an unfilled region of 0.5 mm or more, it was determined as x. When there was neither a void of 0.5 mm or more and an unfilled region of 0.5 mm or more, it was determined as ⁇ .
  • the protective resin was cured by heating the structure at 180 ° C. for 2 hours using a hot air circulating dryer.
  • the surface (hymen) of the protective resin after curing was visually observed. When a pattern was recognized, it determined with x. When the pattern was not recognized, it was judged as “good”.

Abstract

L'invention concerne une composition thermodurcissable et une feuille, du gaz piégé entre un composant électronique et la composition thermodurcissable pouvant être diminué et l'apparition de marques d'écoulement pouvant être supprimée. L'invention concerne un procédé de fabrication d'un dispositif présentant peu de vides internes et une irrégularité/des trous d'épingle/des marques d'écoulement minimaux. La présente invention concerne une composition thermodurcissable en forme de feuille, comprenant une résine phénolique, une charge inorganique et des particules à base de silicone. La présente invention concerne une feuille comprenant une composition thermodurcissable. La présente invention concerne un procédé de fabrication d'un dispositif comprenant une étape consistant à disposer une composition thermodurcissable sur un composant électronique, une étape consistant à former un complexe et une étape consistant à provoquer le durcissement de la composition thermodurcissable par chauffage du complexe.
PCT/JP2016/077116 2015-09-28 2016-09-14 Composition thermodurcissable, feuille et procédé pour un dispositif de fabrication WO2017056994A1 (fr)

Priority Applications (2)

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CN201680052778.4A CN108026354A (zh) 2015-09-28 2016-09-14 热固化性组合物和片以及装置的制造方法
SG11201802323SA SG11201802323SA (en) 2015-09-28 2016-09-14 Thermally curable composition and sheet/device manufacturing method

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JP2015189313A JP2017066174A (ja) 2015-09-28 2015-09-28 熱硬化性組成物およびシート・装置の製造方法
JP2015-189313 2015-09-28

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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2002241617A (ja) * 2001-02-14 2002-08-28 Nitto Denko Corp 熱硬化性樹脂組成物および半導体装置
JP2013151642A (ja) * 2011-12-27 2013-08-08 Hitachi Chemical Co Ltd 電子部品用液状樹脂組成物及びその製造方法、並びに電子部品装置
JP2015030745A (ja) * 2013-07-31 2015-02-16 住友ベークライト株式会社 樹脂組成物、半導体装置、多層回路基板および電子部品
WO2015079708A1 (fr) * 2013-11-29 2015-06-04 ナミックス株式会社 Composition de résine époxy, agent d'étanchéité de semi-conducteur, et dispositif semi-conducteur

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Publication number Priority date Publication date Assignee Title
JP2009097014A (ja) * 2007-09-27 2009-05-07 Hitachi Chem Co Ltd 封止用液状樹脂組成物、電子部品装置及びウエハーレベルチップサイズパッケージ
CN104024337B (zh) * 2011-11-15 2016-08-24 株式会社日本触媒 含硅烷组合物、固化性树脂组合物和密封材
JP2015137299A (ja) * 2014-01-21 2015-07-30 住友ベークライト株式会社 樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、および電子装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241617A (ja) * 2001-02-14 2002-08-28 Nitto Denko Corp 熱硬化性樹脂組成物および半導体装置
JP2013151642A (ja) * 2011-12-27 2013-08-08 Hitachi Chemical Co Ltd 電子部品用液状樹脂組成物及びその製造方法、並びに電子部品装置
JP2015030745A (ja) * 2013-07-31 2015-02-16 住友ベークライト株式会社 樹脂組成物、半導体装置、多層回路基板および電子部品
WO2015079708A1 (fr) * 2013-11-29 2015-06-04 ナミックス株式会社 Composition de résine époxy, agent d'étanchéité de semi-conducteur, et dispositif semi-conducteur

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