WO2014203830A1 - Procédé de scellement de dispositif électronique, procédé de production de boîtier de dispositif électronique, et feuille de scellement - Google Patents

Procédé de scellement de dispositif électronique, procédé de production de boîtier de dispositif électronique, et feuille de scellement Download PDF

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Publication number
WO2014203830A1
WO2014203830A1 PCT/JP2014/065776 JP2014065776W WO2014203830A1 WO 2014203830 A1 WO2014203830 A1 WO 2014203830A1 JP 2014065776 W JP2014065776 W JP 2014065776W WO 2014203830 A1 WO2014203830 A1 WO 2014203830A1
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WIPO (PCT)
Prior art keywords
sealing sheet
electronic device
release film
sealing
substrate
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PCT/JP2014/065776
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English (en)
Japanese (ja)
Inventor
豊田　英志
石坂　剛
亀山　工次郎
祐作 清水
石井　淳
Original Assignee
日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to CN201480034582.3A priority Critical patent/CN105324836A/zh
Publication of WO2014203830A1 publication Critical patent/WO2014203830A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Definitions

  • the present invention relates to an electronic device sealing method, an electronic device package manufacturing method, and a sealing sheet.
  • Patent Document 1 a laminate in which a substrate, an electronic device, and a heat-softened sealing sheet are arranged in this order is covered with a release film in a vacuum chamber in a vacuum state, and the substrate, the electronic device, and the sealing sheet are accommodated.
  • a method of sealing an electronic device by forming a vacuum hermetically sealed space and then introducing a gas at atmospheric pressure or higher into the chamber to bring the sealing sheet into close contact with the electronic device and the substrate is disclosed.
  • Patent Document 1 can uniformly pressurize a sealing target such as an electronic device.
  • the sealing sheet softened by heating may protrude from the substrate (the sealing sheet protrudes outside the area to be sealed).
  • the sealing sheet cannot follow the unevenness
  • An object of the present invention is to provide an electronic device sealing method, an electronic device package manufacturing method, and a sealing sheet that can solve the above-described problems and prevent protrusion of the sealing sheet and that can satisfactorily embed unevenness.
  • substrate with a device provided with the electronic device arrange
  • the peripheral portion of the laminate including the sealing sheet disposed on the substrate with the device and the release film including the central portion in contact with the sealing sheet and the peripheral portion disposed around the central portion is pressed against the stage in contact with the substrate.
  • the electronic device is sealed by utilizing the pressure difference inside and outside the sealed space that houses the substrate, the electronic device, and the sealing sheet.
  • a vacuum heating bonding apparatus described in Japanese Patent No. 5189194 can be used.
  • the content of the inorganic filler is 60% by volume or more, the temperature showing the lowest complex viscosity ⁇ * is 100 to 150 ° C., and the lowest complex viscosity ⁇ * is 30 Pa ⁇ s. Since the above sealing sheet is used, the protrusion of the sealing sheet can be prevented. Moreover, since the sealing sheet having an inorganic filler content of 90% by volume or less and a minimum complex viscosity ⁇ * of 3000 Pa ⁇ s or less is used, the unevenness can be embedded well.
  • the tensile break elongation at room temperature of the release film is preferably 30 to 300%. Thereby, it is possible to perform sealing with good conformity to the unevenness of the electronic device on the substrate.
  • the adhesion between the sealing sheet and the release film is 0.1 N / 20 mm or less.
  • a release film can be favorably peeled from a sealing sheet.
  • the sealing method of 1st this invention arrange
  • the sealing sheet Since the sealing sheet is brought into contact with the electronic device under a reduced pressure atmosphere, it is possible to prevent entry of voids between the sealing sheet and the electronic device and entry of voids between the sealing sheet and the substrate.
  • the inside of the vacuum heat press is high temperature and it is easy for voids to enter.
  • voids can be prevented from entering, continuous operation is possible and productivity can be improved. .
  • the first aspect of the present invention also includes a step of forming a sealed container including a stage and a release film by pressing a peripheral portion of the laminated body against a stage in contact with the substrate, and a pressure outside the sealed container is set inside the sealed container. It is related with the manufacturing method of an electronic device package including the process of covering an electronic device with a sealing sheet by making it raise from a pressure.
  • the first aspect of the present invention also includes a step of forming a sealed container including a stage and a release film by pressing a peripheral portion of the laminated body against a stage in contact with the substrate, and a pressure outside the sealed container is set inside the sealed container. It is related with the sealing sheet for using for the sealing method of an electronic device including the process of covering an electronic device with a sealing sheet by making it raise from a pressure.
  • the sealing sheet of the first aspect of the present invention contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume.
  • the sealing sheet of the first invention has a temperature showing a minimum complex viscosity ⁇ * measured at a temperature rising rate of 10 ° C./min, a measurement frequency of 1 Hz, and a strain of 5% of 100 to 150 ° C., and the minimum complex viscosity ⁇ * Is 30 to 3000 Pa ⁇ s.
  • 2nd this invention is a device temporary fixing body provided with the carrier, the adhesive arrange
  • the method of sealing an electronic device including the step of covering the electronic device with a sealing sheet by increasing the pressure outside the sealed container to be higher than the pressure inside the sealed container.
  • the electronic device is covered by utilizing the pressure difference between the inside and outside of the sealed container.
  • a vacuum heating bonding apparatus described in Japanese Patent No. 5189194 can be used.
  • the content of the inorganic filler is 60% by volume or more, the temperature showing the lowest complex viscosity ⁇ * is 100 to 150 ° C., and the lowest complex viscosity ⁇ * is 30 Pa ⁇ s. Since the above sealing sheet is used, the protrusion of the sealing sheet can be prevented. Moreover, since the sealing sheet having an inorganic filler content of 90% by volume or less and a minimum complex viscosity ⁇ * of 3000 Pa ⁇ s or less is used, the unevenness can be embedded well.
  • the sealing method of 2nd this invention is by arrange
  • the method may further include a step of forming a laminated structure. Since the sealing sheet is brought into contact with the electronic device under a reduced-pressure atmosphere, it is possible to prevent entry of voids between the sealing sheet and the electronic device and entry of voids between the sealing sheet and the adhesive.
  • the second aspect of the present invention also includes a step of forming a sealed container including a stage and a release film by pressing the peripheral portion of the laminated structure against a stage in contact with the carrier, and the pressure outside the sealed container is adjusted to the inside of the sealed container. It is related with the manufacturing method of an electronic device package including the process of covering an electronic device with a sealing sheet by making it raise from pressure of this.
  • the second aspect of the present invention also includes a step of forming a sealed container including a stage and a release film by pressing the peripheral portion of the laminated structure against a stage in contact with the carrier, and the pressure outside the sealed container is adjusted to the inside of the sealed container. It is related with the sealing sheet for using it for the sealing method of an electronic device including the process of covering an electronic device with a sealing sheet by making it raise from the pressure of this.
  • the sealing sheet according to the second aspect of the present invention contains an inorganic filler, and the content of the inorganic filler is 60 to 90% by volume.
  • the sealing sheet of the second aspect of the present invention has a temperature showing a minimum complex viscosity ⁇ * measured at a temperature rising rate of 10 ° C./min, a measurement frequency of 1 Hz and a strain of 5% of 100 to 150 ° C., and the minimum complex viscosity ⁇ * Is 30 to 3000 Pa ⁇ s.
  • Embodiment 1 (Vacuum heat press) First, the vacuum heat press apparatus (vacuum heating joining apparatus) used with the sealing method of Embodiment 1 is demonstrated.
  • a pressure cylinder lower plate 2 is disposed on a base 1, and a slide moving table 3 is vacuum heat pressed by a slide cylinder 4 on the pressure cylinder lower plate 2. It is arranged to be movable inside and outside the device.
  • a lower heater plate 5 is thermally insulated above the slide moving table 3.
  • a lower plate member 6 is disposed on the upper surface of the lower heater plate 5.
  • the substrate table 7 is also referred to as a stage 7).
  • a plurality of support columns 8 are arranged and erected on the pressure cylinder lower plate 2, and a pressure cylinder upper plate 9 is fixed to the upper end portion of the support column 8.
  • the support column 8 may be erected directly on the base 1.
  • An intermediate moving member (intermediate member) 10 is disposed below the pressure cylinder upper plate 9 through a support column 8, and an upper heater plate 11 is fixed below the intermediate moving member 10 via a heat insulating plate.
  • An upper frame member 12 is airtightly fixed to the outer peripheral portion of the lower surface of the plate 11 and extends downward.
  • An inner frame 13 is fixed to the inner surface of the upper frame member 12 on the lower surface of the upper heater plate 11.
  • the upper heater plate 11 can function as a heater for softening the release film 24 and the sealing sheet 23, for example.
  • the lower heater plate 5 can function as a preheating heater for the substrate 21, for example.
  • a top plate 17 (hereinafter also referred to as a flat plate 17) is fixed to the inner side of the inner frame
  • the inner frame 13 includes a frame-shaped pressing portion 13a at the lower end portion and a rod 13b extending upward therefrom, a spring is disposed around the rod 13b, and the rod 13b is insulated and fixed to the lower surface of the upper heater plate 11. ing.
  • the frame-shaped presser 13a is biased downward by a spring with respect to the rod 13b.
  • the release film 24 can be kept airtight between the frame-shaped presser 13 a and the stage 7.
  • a pressure cylinder 14 is disposed on the upper surface of the pressure cylinder upper plate 9, and a cylinder rod 15 of the pressure cylinder 14 passes through the pressure cylinder upper plate 9 and is fixed to the upper surface of the intermediate moving member 10. Accordingly, the intermediate moving member 10, the upper heater plate 11, and the upper frame body 12 can be integrally moved up and down.
  • S is a stopper that restricts the downward movement of the intermediate moving member 10, the upper heater plate 11, and the upper frame 12 by the pressure cylinder 14, and is lowered to a stopper plate on the upper surface of the pressure cylinder 14 body. It comes to contact with.
  • the vacuum partition (henceforth a vacuum partition is also called a storage container) provided with the upper heater board 11, the upper frame member 12, and the lower board member 6 can be formed.
  • the upper frame member 12 is provided with a vacuum / pressure port 16 for evacuating and pressurizing the inside of the vacuum partition (hereinafter, the interior of the vacuum partition is also referred to as a vacuum chamber).
  • the slide moving table 3, the lower heater plate 5, and the lower plate member 6 can be pulled out to the outside by the slide cylinder 4.
  • the substrate 21 and the like can be arranged on the stage 7 in a state where these are pulled out.
  • the laminated body 41 includes a device-equipped substrate 42, a sealing sheet 23 disposed on the device-equipped substrate 42, and a release film 24 disposed on the sealing sheet 23.
  • the device-equipped substrate 42 includes the substrate 21 and the electronic device 22 disposed on the substrate 21.
  • the release film 24 includes a central portion 24a that is in contact with the sealing sheet 23 and a peripheral portion 24b that is disposed around the central portion 24a.
  • the sealing sheet 23 and the release film 24 may be arranged in this order on the electronic device 22 arranged on the substrate 21.
  • the outer dimension of the release film 24 is a size that can cover the substrate 21, the electronic device 22, and the sealing sheet 23.
  • the outer dimension of the sealing sheet 23 is a size capable of sealing the electronic device 22.
  • the sealing sheet 23 is a size that is not sandwiched between the stage 7 and the frame-shaped pressing portion 13a.
  • the sealing sheet 23 will be described in detail later.
  • the electronic device 22 is not particularly limited.
  • a SAW (Surface Acoustic Wave) filter a MEMS (Micro Electro Mechanical Systems) device such as a pressure sensor and a vibration sensor, an IC (integrated circuit) such as an LSI, a transistor, etc.
  • a MEMS (Micro Electro Mechanical Systems) device such as a pressure sensor and a vibration sensor
  • an IC (integrated circuit) such as an LSI, a transistor, etc.
  • the substrate 21 is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a silicon substrate, and a metal substrate.
  • the substrate 21 is preferably one that has been subjected to plasma treatment. Argon etc. are mentioned as gas which turns into plasma. Thereby, the reliability of electrical connection can be improved.
  • the material of the release film 24 is not particularly limited, and examples thereof include a fluorine film and a polyolefin film. Of these, poly-4-methylpentene-1 is preferred because of its good heat resistance and tensile elongation characteristics.
  • the tensile elongation at break of the release film 24 at room temperature is preferably 30% or more, more preferably 40% or more. When it is 30% or more, the unevenness followability at the time of molding is good.
  • the tensile elongation at break of the release film 24 at room temperature is preferably 300% or less, more preferably 100% or less. If it is 300% or less, peeling work is easy.
  • the tensile elongation at break can be measured according to ASTM D882.
  • the softening temperature of the release film 24 is not specifically limited, Preferably it is 80 degrees C or less, More preferably, it is 60 degrees C or less. When the temperature is 80 ° C. or less, the unevenness followability during molding is good.
  • the softening temperature of the release film 24 is preferably 0 ° C. or higher.
  • the temperature at which the tensile elastic modulus is 300 MPa is defined as the softening temperature.
  • the surface of the release film 24 is preferably an uneven shape. Thereby, the release film 24 can be favorably peeled from the sealing sheet 23.
  • the thickness of the release film 24 is not particularly limited, but is preferably 10 ⁇ m to 200 ⁇ m. Within the above range, the electronic device 22 can be satisfactorily sealed.
  • FIG. 3 is a diagram schematically illustrating a state in which a vacuum partition is formed by the upper heater plate 11, the upper frame member 12, and the lower plate member 6.
  • the upper heater plate 11 is lowered by the pressure cylinder 14, and the lower end portion of the upper frame member 12 is slid in an airtight manner to the step of the outer edge portion of the lower plate member 6 to form a vacuum partition.
  • the vacuum chamber is formed inside the vacuum partition, the lowering of the upper heater plate 11 is stopped.
  • evacuation process In the evacuation step, evacuation is performed to bring the inside of the vacuum chamber into a reduced pressure state (preferably a vacuum state), and then the release film 24 and the sealing sheet 23 are heated and softened.
  • the release film 24 and the sealing sheet 23 may be heated before or during evacuation.
  • the heating temperature of the release film 24 and the sealing sheet 23 is preferably 50 ° C. to 150 ° C.
  • the sealing sheet 23 is inclined from the contact portion in contact with the electronic device 22 toward the periphery of the contact portion. Further, the release film 24 is inclined from the central portion 24a toward the peripheral portion 24b. A part of the peripheral portion 24 b is in contact with the stage 7.
  • the upper heater plate 11 is further lowered, and the release film 24 is pressed against the stage 7 on the lower surface of the lower end portion of the inner member 13, so that the substrate 21, the electronic device 22, and the sealing sheet 23 are pressed. Is covered with a release film 24.
  • a sealed space for accommodating the substrate 21, the electronic device 22, and the sealing sheet 23 is formed. That is, the hermetic container 121 is formed by pressing the peripheral portion 24b against the stage 7 with the frame-shaped pressing portion 13a.
  • the sealed container 121 includes a stage 7 and a release film 24. Inside the sealed container 121 (sealed space), the substrate 21, the electronic device 22, and the sealing sheet 23 are arranged. In addition, in order to form a sealed space after the inside of the vacuum chamber is in a reduced pressure state, the inside and the outside of the sealed space are in a reduced pressure state.
  • gas is introduced into the vacuum chamber through the vacuum / pressurizing port 16, the pressure outside the sealed space is increased from the inside of the sealed space, and the sealing sheet 23 is pressed against the electronic device 22.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • the gas pressure is not particularly limited, but is preferably atmospheric pressure or higher. By introducing gas, the pressure outside the sealed space can be raised to atmospheric pressure or higher.
  • the electronic device package includes a device-equipped substrate 42 and a resin layer disposed on the device-equipped substrate 42.
  • the top plate 17 is lowered, and the electronic device package is pressurized through the release film 24 to flatten the surface of the electronic device package on the release film 24 side. Also good. Thereby, the thickness of the electronic device package can be made uniform.
  • the pressure applied is preferably 0.5 to 20 kgf / cm 2 .
  • the resin layer is cured by heating the electronic device package. Next, bumps are provided on the electronic device package. Next, the electronic device package may be diced into chips.
  • rewiring may be formed in the electronic device package.
  • the sealing sheet 23 has a temperature showing a minimum complex viscosity ⁇ * measured at a heating rate of 10 ° C./min, a measurement frequency of 1 Hz, and a strain of 5% of 100 to 150 ° C., and a minimum complex viscosity ⁇ * of 30 to 3000 Pa ⁇ s. Since the temperature showing the lowest complex viscosity ⁇ * is 100 to 150 ° C. and the lowest complex viscosity ⁇ * is 30 Pa ⁇ s or more, the protrusion can be prevented. On the other hand, since the temperature showing the lowest complex viscosity ⁇ * is 100 to 150 ° C. and the lowest complex viscosity ⁇ * is 3000 Pa ⁇ s or less, the unevenness can be embedded well.
  • the minimum complex viscosity ⁇ * is preferably 100 Pa ⁇ s or more.
  • the lowest complex viscosity ⁇ * is preferably 2500 Pa ⁇ s or less, more preferably 2000 Pa ⁇ s or less.
  • the minimum complex viscosity ⁇ * can be controlled by the content of the inorganic filler, the type of the inorganic filler, and the melt viscosity of the organic component.
  • the temperature showing the lowest complex viscosity ⁇ * can be controlled mainly by the type and amount of the curing catalyst.
  • the temperature indicating the lowest complex viscosity ⁇ and the lowest complex viscosity ⁇ * can be measured by the method described in Examples.
  • the sealing sheet 23 contains a thermosetting resin.
  • a thermosetting resin an epoxy resin, a phenol resin, etc. can be used conveniently, for example.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • epoxy resin Although it does not specifically limit as an epoxy resin, From a viewpoint of ensuring the flexibility before hardening and the molding hardness and intensity
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolak from the viewpoint of high curing reactivity. Resin can be used suitably. Moreover, the phenol resin which has a biphenyl aralkyl skeleton can be used suitably from the point of the low curvature property of a hardened
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 23 is preferably 5% by weight or more, and more preferably 10% by weight or more. When it is 5% by weight or more, sufficient cured product strength can be obtained.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 23 is preferably 20% by weight or less, and more preferably 15% by weight or less. When it is 20% by weight or less, the linear expansion coefficient of the cured product is small, and low water absorption is easily obtained.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the sealing sheet 23 contains an inorganic filler.
  • the inorganic filler examples include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride.
  • silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
  • the average particle size of the inorganic filler is preferably 0.3 ⁇ m or more, more preferably 1 ⁇ m or more, and further preferably 5 ⁇ m or more. It is easy to obtain the flexibility and softness of the sealing sheet 23 as it is 0.3 ⁇ m or more.
  • the average particle size of the inorganic filler is preferably 40 ⁇ m or less, more preferably 30 ⁇ m or less. When it is 40 ⁇ m or less, it is easy to increase the filling rate of the inorganic filler.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the sealing sheet 23 is 60% by volume or more, preferably 65% by volume or more. Since it is 60 vol% or more, a molded product having low water absorption and low warpage can be obtained. On the other hand, the content of the inorganic filler is 90% by volume or less, preferably 85% by volume or less. Since it is 90 volume% or less, the crack and notch
  • the content of the inorganic filler can be explained by using “wt%” as a unit.
  • the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is, for example, as follows. That is, the content of silica in the sealing sheet 23 is preferably 73% by weight or more, and more preferably 77% by weight or more. 94 weight% or less is preferable and, as for content of the silica in the sealing sheet 23, 91 weight% or less is more preferable.
  • the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the sealing sheet 23 is preferably 83% by weight or more, and more preferably 86% by weight or more. 95 weight% or less is preferable and, as for content of the alumina in the sealing sheet 23, 93 weight% or less is more preferable.
  • the sealing sheet 23 preferably contains a silane coupling agent.
  • the silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
  • hydrolyzable group examples include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group.
  • a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
  • organic functional group examples include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group.
  • a methacryl group is preferable because it suppresses aggregation of the inorganic filler.
  • silane coupling agent examples include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc.
  • vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane
  • 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyl
  • Styryl group-containing silane coupling agent 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-a
  • the content of the silane coupling agent is not particularly limited, but is preferably 0.05 to 5 parts by weight with respect to 100 parts by weight of the inorganic filler.
  • the sealing sheet 23 contains a hardening accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because good storage stability can be obtained.
  • the content of the curing accelerator is preferably 0.1 parts by weight or more, more preferably 0.5 parts by weight or more with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin. When it is 0.1 parts by weight or more, curing is completed within a practical time. Further, the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less. When it is 5 parts by weight or less, good storage stability is obtained.
  • the sealing sheet 23 contains a thermoplastic resin (elastomer).
  • Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
  • a core-shell type acrylic resin having a core layer made of a rubber component and a shell layer made of an acrylic resin is preferable because of dispersibility in an epoxy resin.
  • the rubber component constituting the core-shell type acrylic resin is not particularly limited, and examples thereof include butadiene rubber, isoprene rubber, chloroprene rubber, acrylic rubber, and silicon rubber.
  • the average particle diameter of the core-shell type acrylic resin is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more. Dispersibility is favorable in it being 0.1 micrometer or more.
  • the average particle diameter of the core-shell type acrylic resin is preferably 200 ⁇ m or less, more preferably 100 ⁇ m or less.
  • seat is favorable in it being 200 micrometers or less.
  • the average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the thermoplastic resin is preferably 1 part by weight or more, more preferably 5 parts by weight or more with respect to 100 parts by weight of an organic component (for example, epoxy resin, phenol resin, thermoplastic resin, curing accelerator, etc.). is there. A flexibility is favorable in it being 1 weight part or more. Further, the content of the thermoplastic resin is preferably 50 parts by weight or less, more preferably 40 parts by weight or less. When it is 50 parts by weight or less, fluidity and deformability are good.
  • an organic component for example, epoxy resin, phenol resin, thermoplastic resin, curing accelerator, etc.
  • the sealing sheet 23 may contain a pigment, a flame retardant component, and the like.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the sealing sheet 23 is preferably 0.01 to 1% by weight.
  • various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxide, phosphazene compounds, and the like can be used.
  • phosphazene compounds are preferred because they are excellent in flame retardancy and strength after curing.
  • the manufacturing method of the sealing sheet 23 is not specifically limited, The method of carrying out the plastic processing of the kneaded material obtained by knead
  • the said each component for example, an epoxy resin, a phenol resin, an inorganic filler, and a hardening accelerator
  • the inorganic filler can be highly filled.
  • a kneaded material is prepared by melt-kneading an epoxy resin, a phenol resin, an inorganic filler, and a curing accelerator by a known kneader such as a mixing roll, a pressure kneader, an extruder, and the obtained kneading.
  • An object is plastically processed into a sheet.
  • the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
  • the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
  • the kneading time is preferably 1 to 30 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
  • the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the sealing sheet 23 can also be manufactured by a coating method. For example, an adhesive composition solution containing each of the components described above is prepared, and the adhesive composition solution is applied on a base separator to a predetermined thickness to form a coating film, and then the coating film is dried. Thus, the sealing sheet 23 can be manufactured.
  • the solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable.
  • organic solvent capable of uniformly dissolving, kneading or dispersing the above components.
  • examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like.
  • polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used.
  • a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent
  • Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating.
  • the drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
  • the thickness of the sealing sheet 23 is not specifically limited, Preferably it is 100 micrometers or more, More preferably, it is 150 micrometers or more. Further, the thickness of the sealing sheet 23 is preferably 2000 ⁇ m or less, more preferably 1000 ⁇ m or less. Within the above range, the electronic device 22 can be satisfactorily sealed.
  • the sealing sheet 23 may have a single layer structure or a multilayer structure in which two or more sealing sheets are laminated, but there is no fear of delamination and the sheet thickness is highly uniform. Therefore, a single layer structure is preferable.
  • the sealing method of Embodiment 1 includes, for example, a step of arranging the sealing sheet 23 and the release film 24 in this order on the electronic device 22 arranged on the substrate 21, and a reduced-pressure atmosphere. Covering the substrate 21, the electronic device 22, and the sealing sheet 23 with the release film 24 to form a sealed space sealed by the release film 24, and increasing the pressure outside the sealed space from the inside of the sealed space And a step of sealing the electronic device 22 with the sealing sheet 23 using the pressure difference generated by the above. Moreover, the sealing method of Embodiment 1 further includes a step of lowering the top plate 17 from above the release film 24 and pressurizing the electronic device package via the release film 24 as necessary.
  • Embodiment 2 uses the release film 31 with the sealing sheet in which the sealing sheet 23 and the release film 24 are integrated, and contacts the electronic device 22 with the sealing sheet 23 after decompressing the inside of the vacuum chamber. This is different from the first embodiment. In the description of the second embodiment, the same contents as those in the first embodiment are omitted.
  • the adhesion between the sealing sheet 23 and the release film 24 is preferably 0.1 N / 20 mm or less.
  • the release film 24 can be favorably peeled from the sealing sheet 23 as it is 0.1 N / 20 mm or less.
  • the adhesive force of the sealing sheet 23 and the release film 24 can be measured by the method as described in an Example.
  • the method of fixing the release film 31 with the sealing sheet to the frame-shaped holding part 13a is not particularly limited.
  • the frame-like holding part 13a having a holding means for holding the release film 31 with the sealing sheet is used.
  • Examples thereof include a method of holding the release film 31 with the sealing sheet with the holding means, a method of attaching the release film 31 with the sealing sheet to the lower surface of the frame-shaped presser portion 13a via an adhesive, and the like.
  • FIG. 8 is a diagram schematically illustrating a state in which a vacuum partition is formed by the upper heater plate 11, the upper frame member 12, and the lower plate member 6.
  • the upper heater plate 11 is lowered by the pressure cylinder 14, and the lower end portion of the upper frame member 12 is slid in an airtight manner to the step of the outer edge portion of the lower plate member 6 to form a vacuum partition. Then, the lowering of the upper heater plate 11 is stopped until the release film 31 with the sealing sheet contacts the electronic device 22.
  • evacuation process In the evacuation step, evacuation is performed to bring the inside of the vacuum chamber into a reduced pressure state (preferably a vacuum state), and then the release film 24 and the sealing sheet 23 are heated and softened.
  • the release film 24 and the sealing sheet 23 may be heated before or during evacuation.
  • the heating temperature of the release film 24 and the sealing sheet 23 is preferably 50 ° C. to 150 ° C.
  • the heater plate 11 is further lowered, and the release film 24 is pressed on the lower surface of the lower end portion of the inner member 13, so that the substrate 21, the electronic device 22 and the sealing sheet 23 are released from the release film. Cover with 24. Thereby, a sealed space for accommodating the substrate 21, the electronic device 22, and the sealing sheet 23 is formed.
  • the inside and the outside of the sealed space are in a reduced pressure state.
  • the lowering of the heater plate 11 may be a series of operations or an intermittent operation.
  • gas is introduced into the vacuum chamber through the vacuum / pressurizing port 16, the pressure outside the sealed space is increased from the inside of the sealed space, and the sealing sheet 23 is pressed against the electronic device 22. Thereby, an electronic device package in which the electronic device 22 is sealed with the sealing sheet 23 can be obtained.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • the gas pressure is not particularly limited, but is preferably atmospheric pressure or higher. By introducing gas, the pressure outside the sealed space can be raised to atmospheric pressure or higher.
  • the top plate 17 is lowered and the electronic device package is pressurized through the release film 24, thereby flattening the surface of the electronic device package on the release film 24 side. Also good. Thereby, the thickness of the electronic device package can be made uniform.
  • the pressure applied is preferably 0.5 to 20 kgf / cm 2 .
  • Rewiring or a pump may be formed on the electronic device package. Further, the electronic device package may be diced into chips.
  • the sealing method of the second embodiment includes the steps of preparing the release film 31 with the sealing sheet in which the sealing sheet 23 is laminated on the release film 24, and the electronic device disposed on the substrate 21.
  • the step of disposing the release film 31 with the sealing sheet on the electronic device 22 with a gap between the electronic device 22 and the release film 31 with the sealing sheet is lowered in a reduced-pressure atmosphere.
  • the step of bringing into contact with the electronic device 22, the release film 31 with the sealing sheet is further lowered, the substrate 21, the electronic device 22 and the sealing sheet 23 are covered with the release film 24, and sealed with the release film 24.
  • the electronic device 22 is sealed with the sealing sheet 23 by using the pressure difference generated by the step of forming the sealed space and the pressure outside the sealed space being increased from the inside of the sealed space. And a step of stopping.
  • the sealing method of Embodiment 2 further includes a step of lowering the top plate 17 from above the release film 24 and pressurizing the electronic device package via the release film 24 as necessary.
  • the case where one electronic device 22 is arranged on the substrate 21 is shown, but the number of the electronic devices 22 is not particularly limited and may be plural.
  • the release film 24 is placed on the sealing sheet 23.
  • the release film 24 is released.
  • the film 24 may be fixed to the lower end portion of the inner frame 13.
  • the release film 24 may be disposed at a predetermined position by a release film sandwiching jig as shown in FIGS. 5 (a) to 5 (d) of Japanese Patent No. 5189194.
  • a release film 31 with a sealing sheet may be used instead of the sealing sheet 23 and the release film 24.
  • the laminated structure 101 is placed on the stage 7.
  • the laminated structure 101 includes a chip temporary fixing body 51, a sealing sheet 23 disposed on the chip temporary fixing body 51, and a release film 24 disposed on the sealing sheet 23.
  • the chip temporary fixing body 51 includes a carrier 51a, an adhesive 51b disposed on the carrier 51a, and a semiconductor chip 51c fixed on the adhesive 51b.
  • Examples of the carrier 51a include a metal plate and a brass chip plate.
  • Examples of the material of the carrier 51a include metal materials such as SUS, and plastic materials such as polyimide, polyamideimide, polyether ether ketone, and polyether sulfone.
  • the pressure-sensitive adhesive 51b is not particularly limited, but a heat-peelable pressure-sensitive adhesive such as a heat-foamable pressure-sensitive adhesive is usually used because it can be easily peeled off.
  • the semiconductor chip 51c includes an electrode pad 151c.
  • the circuit forming surface 251c provided with the electrode pad 151c is in contact with the adhesive 51b.
  • the outer dimension of the sealing sheet 23 is a size capable of sealing the semiconductor chip 51c.
  • the release film 24 includes a central portion 24a that is in contact with the sealing sheet 23 and a peripheral portion 24b that is disposed around the central portion 24a.
  • the outer dimension of the release film 24 is a size that can cover the chip temporary fixing body 51 and the sealing sheet 23.
  • Stage 7 is preheated.
  • the temperature of the stage 7 is preferably 70 ° C. or higher, more preferably 80 ° C. or higher, and further preferably 85 ° C. or higher. When the temperature is 70 ° C. or higher, the sealing sheet 23 can be melted and fluidized.
  • the temperature of the stage 7 is preferably 100 ° C. or lower, more preferably 95 ° C. or lower. When it is 100 ° C. or lower, it can be molded while suppressing the curing reaction.
  • the upper heater plate 11 and the upper frame member 12 are lowered, and the lower end portion of the upper frame member 12 is airtightly slid along the outer edge portion of the lower plate member 6.
  • a vacuum chamber hermetically surrounded by the frame member 12 and the lower plate member 6 is formed. That is, a storage container including the upper heater plate 11, the upper frame member 12 and the lower plate member 6 is formed. At the stage where the vacuum chamber is formed, the lowering of the upper heater plate 11 and the upper frame member 12 is stopped.
  • the pressure in the vacuum chamber is preferably 500 Pa or less.
  • the sealed container 121 includes a stage 7 and a release film 24. Inside the sealed container 121, the chip temporary fixing body 51 and the sealing sheet 23 disposed on the chip temporary fixing body 51 are arranged. In addition, in order to form the airtight container 121 after making the inside of a vacuum chamber into a pressure reduction state, the inside and the outside of the airtight container 121 are in a pressure reduction state.
  • the pressure in the vacuum chamber is set to atmospheric pressure by opening the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is set to atmospheric pressure.
  • the pressure in the vacuum chamber is increased by introducing gas into the vacuum / pressurizing port 116. That is, the pressure outside the sealed container 121 is increased above the atmospheric pressure. Thereby, the semiconductor chip 51c is covered with the sealing sheet 23, and the sealing body 61 is obtained.
  • the gas is not particularly limited, and examples thereof include air and nitrogen.
  • the pressure outside the sealed container 121 after the gas introduction is preferably 0.1 MPa or more, more preferably 0.5 MPa or more, and further preferably 0.9 MPa or more.
  • the upper limit of the pressure outside the sealed container 121 is not particularly limited, but is preferably 5 MPa or less, more preferably 3 MPa or less.
  • the sealing body 61 includes a semiconductor chip 51c and a resin portion 61a that covers the semiconductor chip 51c.
  • the sealing body 61 is in contact with the adhesive 51b. Further, the sealing body 61 is in contact with the release film 24.
  • a spacer 131 is arranged beside the sealing body 61.
  • the sealing body 61 is pressed and the thickness of the sealing body 61 is adjusted by lowering the flat plate 17 until it hits the spacer 131. Thereby, the thickness of the sealing body 61 can be equalized.
  • the pressure when pressing the sealing body 61 with the flat plate 17 is preferably 0.5 kgf / cm 2 to 20 kgf / cm 2 .
  • the resin body 61 a is cured by heating the sealing body 61 to form the cured body 71.
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • the cured body 71 includes a semiconductor chip 51c and a protection part 71a that covers the semiconductor chip 51c.
  • the cured body 71 is in contact with the adhesive 51b.
  • the cured body 71 can be defined on both sides by a first main surface including the circuit forming surface 251c and a second main surface opposite to the first main surface.
  • the adhesive 51b is heated to reduce the adhesive force of the adhesive 51b.
  • the adhesive 51b is peeled from the cured body 71.
  • the cured body 71 is fixed to the suction stage by adsorbing the cured body 71 to the suction stage.
  • a buffer coat film 141 is formed on the first main surface.
  • photosensitive polyimide photosensitive polybenzoxazole (PBO), or the like can be used.
  • the mask 142 is removed.
  • a seed layer is formed on the buffer coat film 141 and the electrode pad 151c.
  • a resist 143 is formed on the seed layer.
  • a plating pattern 144 is formed on the seed layer by a plating method such as electrolytic copper plating.
  • the resist 143 is removed.
  • the rewiring 145 is formed by etching the seed layer.
  • a protective film 146 is formed on the rewiring 145.
  • the protective film 146 photosensitive polyimide, photosensitive polybenzoxazole (PBO), or the like can be used.
  • the rewiring body 104 is obtained by forming an opening in the protective film 146.
  • the rewiring body 104 includes a cured body 71 and a rewiring layer 140 disposed on the cured body 71.
  • the rewiring layer 140 includes a rewiring 145.
  • an electrode (UBM: Under Bump Metal) 147 is formed on the rewiring 145.
  • bumps 148 are formed on the electrodes 147.
  • the pump 148 is electrically connected to the electrode pad 151 c through the electrode 147 and the rewiring 145.
  • the rewiring body 104 is singulated (diced) to obtain the semiconductor package 105. As shown in FIG.
  • the semiconductor package 105 in which the wiring is drawn outside the chip region can be obtained.
  • the laminated structure 101 is disposed on the stage 7.
  • the chip temporary fixing body 51 is disposed on the stage 7, and then the sealing sheet 23 is disposed on the chip temporary fixing body 51. Then, the release film 24 is disposed on the sealing sheet 23.
  • Modification 2 In the third embodiment, the laminated structure 101 is disposed on the stage 7.
  • the laminated body including the chip temporary fixing body 51 and the sealing sheet 23 disposed on the chip temporary fixing body 51 is disposed on the stage 7. Then, the release film 24 is placed on the laminate.
  • the pressure outside the sealed container 121 is set to atmospheric pressure and then higher than the atmospheric pressure, but the third modification does not include the step of setting the pressure outside the sealed container 121 to atmospheric pressure. That is, the sealed container 121 is formed, and then the pressure outside the sealed container 121 is increased above the atmospheric pressure.
  • the modified example 7 is different from the third embodiment in that it further includes a step of forming the laminated structure 101 by disposing the release film 31 with a sealing sheet on the chip temporary fixing body 51 in a reduced pressure atmosphere. Since the modified example 7 is the same as the disposing step, the vacuum partition forming step, the evacuating step, and the contacting step of the second embodiment except that the device-equipped substrate 42 is changed to the chip temporary fixing body 51, the description thereof is omitted.
  • the hermetic container 121 including the stage 7 and the release film 24 is formed by pressing the peripheral portion 24b of the laminated structure 101 against the stage 7 in contact with the carrier 51a. And a step of covering the semiconductor chip 51c with the sealing sheet 23 by increasing the pressure outside the sealed container 121 to be higher than the pressure inside the sealed container 121.
  • the semiconductor package manufacturing method and the semiconductor chip sealing method are exemplified.
  • the second invention can be applied to an electronic device package manufacturing method and an electronic device sealing method. It will be easy to understand.
  • Epoxy resin YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
  • Phenolic resin MEH-7851-SS (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq. Softening point 67 ° C.) manufactured by Meiwa Kasei Co., Ltd.
  • Curing accelerator 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Thermoplastic resin Metablene J-5800 manufactured by Mitsubishi Rayon Co., Ltd. (core-shell type acrylic resin, average particle diameter 1 ⁇ m)
  • Silica filler 1 FB-9454FC (fused spherical silica, average particle size 20 ⁇ m) manufactured by Denki Kagaku Kogyo Co., Ltd.
  • Silica filler 2 SO-25R manufactured by Admatechs (fused spherical silica, average particle size 0.5 ⁇ m)
  • Silane coupling agent KBM-503 (3-methacryloxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd. Carbon black: MA-600 manufactured by Mitsubishi Chemical Corporation
  • Examples 1 to 3 and Comparative Examples 2 to 3 Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded in a roll kneader at 60 to 120 ° C. for 10 minutes under reduced pressure conditions (0.01 kg / cm 2 ) to prepare a kneaded product. Subsequently, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method to produce a sealing sheet having a thickness of 500 ⁇ m.
  • Sealing sheet 200mm square, thickness 500 ⁇ m
  • release film TPI film manufactured by Mitsui Chemicals, X-88BMT4, poly-4-methylpentene-1, double-sided embossing, double-sided mat, tensile elongation at break 50%, softening temperature 52 [deg.] C., thickness 50 [mu] m) were bonded together at a bonding condition of 70 [deg.] C. to produce a release film with a sealing sheet.
  • a semiconductor package was produced by the method described in Embodiment 2 using the obtained release film with a sealing sheet.
  • an organic substrate organic substrate size: 240 mm square, plasma treatment (350 W, 10 sec, Ar)
  • 100 semiconductor chips semiconductor chip size: 15 mm ⁇ 15 mm ⁇ thickness 0.3 mm
  • the release film with the sealing sheet was fixed to the frame-shaped presser 13a. Thereafter, the upper heater plate 11 was lowered to form a vacuum chamber for accommodating them. After evacuating the inside of the vacuum chamber at 10 Torr at room temperature, the release film with the sealing sheet was heated to 100 ° C. Thereafter, the release film was pressed on the lower surface of the lower end portion of the inner member 13 to form a sealed space for accommodating the organic substrate, the semiconductor chip, and the sealing sheet.
  • the atmosphere was pressurized (autoclave) so that the atmosphere outside the sealed space was 5 kg / cm 2, and the sealing sheet was pressed against the semiconductor chip using the pressure difference inside and outside the sealed space to produce a semiconductor package. Thereafter, the top plate 17 was lowered, and the semiconductor package was pressurized (2 kgf / cm 2 ) through the release film to flatten the surface of the semiconductor package on the release film side.
  • Example 2 Using the obtained sealing sheet, a semiconductor package was produced in the same manner as in Example 1 except that no release film was used.
  • Comparative Example 2 using a sealing sheet having an inorganic filler content of less than 60% by volume and a minimum complex viscosity ⁇ * of less than 30 Pa ⁇ s, it was confirmed that the sealing sheet protruded. Moreover, in Comparative Example 3 using a sealing sheet having a minimum complex viscosity ⁇ * exceeding 3000 Pa ⁇ s, it was confirmed that voids entered in the uneven portions.
  • the sealing sheet did not protrude and voids did not enter the concavo-convex portion.
  • Comparative Example 1 in which the release film was not used it was confirmed that the sealing sheet protruded and voids entered.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un procédé de scellement de dispositif électronique permettant d'empêcher qu'une feuille de scellement ne fasse saillie tout en permettant que des reliefs de surface soient intégrés de manière satisfaisante. Selon un premier aspect, l'invention concerne ainsi un procédé de scellement de dispositif électronique comprenant les étapes suivantes : une étape de disposition de feuille de scellement et de film de libération, dans cet ordre, sur un dispositif électronique disposé sur un substrat ; une étape de recouvrement du substrat, du dispositif électronique, et de la feuille de scellement au moyen du film de libération à une atmosphère à pression réduite en vue de former un espace scellé, scellé au moyen du film de libération ; et une étape d'utilisation d'une différence de la pression générée en amenant la pression à l'extérieur de l'espace scellé à être supérieure à celle à l'intérieur de l'espace scellé de sorte à sceller le dispositif électronique au moyen de la feuille de scellement.
PCT/JP2014/065776 2013-06-20 2014-06-13 Procédé de scellement de dispositif électronique, procédé de production de boîtier de dispositif électronique, et feuille de scellement WO2014203830A1 (fr)

Priority Applications (1)

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CN201480034582.3A CN105324836A (zh) 2013-06-20 2014-06-13 电子器件的密封方法、电子器件封装件的制造方法及密封片

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JP2013129924 2013-06-20
JP2013-129924 2013-06-20
JP2014-108217 2014-05-26
JP2014108217A JP2015026821A (ja) 2013-06-20 2014-05-26 電子デバイスの封止方法、電子デバイスパッケージの製造方法及び封止シート

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JP6554516B2 (ja) * 2017-08-31 2019-07-31 東京応化工業株式会社 基板加熱装置、基板処理システム及び基板加熱方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1180511A (ja) * 1997-09-11 1999-03-26 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物
JP2008218496A (ja) * 2007-02-28 2008-09-18 Namics Corp 封止用樹脂フィルム
JP2008227475A (ja) * 2007-02-14 2008-09-25 Toray Ind Inc 半導体封止用離型シートおよびその製造方法
WO2013035251A1 (fr) * 2011-09-05 2013-03-14 ミカドテクノス株式会社 Dispositif de liaison thermique sous vide et procédé de liaison thermique sous vide
JP2013138092A (ja) * 2011-12-28 2013-07-11 Tdk Corp 電子回路モジュール部品及び電子回路モジュール部品の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4225162B2 (ja) * 2003-08-18 2009-02-18 日立化成工業株式会社 封止用フィルム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1180511A (ja) * 1997-09-11 1999-03-26 Sumitomo Bakelite Co Ltd 半導体封止用エポキシ樹脂組成物
JP2008227475A (ja) * 2007-02-14 2008-09-25 Toray Ind Inc 半導体封止用離型シートおよびその製造方法
JP2008218496A (ja) * 2007-02-28 2008-09-18 Namics Corp 封止用樹脂フィルム
WO2013035251A1 (fr) * 2011-09-05 2013-03-14 ミカドテクノス株式会社 Dispositif de liaison thermique sous vide et procédé de liaison thermique sous vide
JP2013138092A (ja) * 2011-12-28 2013-07-11 Tdk Corp 電子回路モジュール部品及び電子回路モジュール部品の製造方法

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