WO2014188826A1 - Procédé pour fabriquer un dispositif à composants électroniques - Google Patents

Procédé pour fabriquer un dispositif à composants électroniques Download PDF

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Publication number
WO2014188826A1
WO2014188826A1 PCT/JP2014/060798 JP2014060798W WO2014188826A1 WO 2014188826 A1 WO2014188826 A1 WO 2014188826A1 JP 2014060798 W JP2014060798 W JP 2014060798W WO 2014188826 A1 WO2014188826 A1 WO 2014188826A1
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WIPO (PCT)
Prior art keywords
sealing sheet
electronic component
laminate
sheet
resin
Prior art date
Application number
PCT/JP2014/060798
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English (en)
Japanese (ja)
Inventor
裕之 千歳
松村　健
豊田　英志
祐作 清水
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to KR1020157031253A priority Critical patent/KR20160013010A/ko
Priority to SG11201509535QA priority patent/SG11201509535QA/en
Priority to CN201480028636.5A priority patent/CN105229780A/zh
Publication of WO2014188826A1 publication Critical patent/WO2014188826A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a method for manufacturing an electronic component device.
  • Patent Document 1 a sealing sheet is disposed on an electronic component mounted on a mounting substrate, and the sealing sheet is pressed under predetermined conditions to embed the electronic component in the sealing sheet. It is described that an electronic component device in which an electronic component is sealed is produced by curing a sealing sheet.
  • the sealing sheet When embedding an electronic component in a sealing sheet, it is desired that the sealing sheet has high followability to the electronic component from the viewpoint of reducing problems in subsequent processes.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method of manufacturing an electronic component device capable of improving the followability of the sealing sheet to the electronic component.
  • the present invention is a method of manufacturing an electronic component device, Step A for preparing a laminate in which a plurality of electronic components are mounted on a mounted body; Step B for preparing a thermosetting sealing sheet having an outer peripheral length of 500 mm or more; Placing the laminate on the heating plate with the surface on which the electronic component is mounted facing up, and placing the sealing sheet on the surface of the laminate on which the electronic component is mounted; and After the step C, the method comprises a step D of hot pressing to embed the electronic component in the sealing sheet.
  • the laminate is disposed on a heating plate with the surface on which the electronic component is mounted facing upward, and the surface of the laminate on which the electronic component is mounted.
  • the sealing sheet is disposed on the top (step C).
  • the electronic component is embedded in the sealing sheet by hot pressing (step D). Accordingly, a step of embedding the electronic component in the sealing sheet in a state where the laminate is interposed between the heating plate and the sealing sheet is performed. Since the laminate is interposed between the heating plate and the sealing sheet, the heat of the heating plate is hardly transmitted to the sealing sheet.
  • the sealing sheet is hard to be thermally cured, and can maintain a low viscosity state, that is, a state with high fluidity. In this state, the embedding process is performed. As a result, the followability to the electronic component of the sealing sheet can be improved.
  • a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more, it is desired that the followability of the sealing sheet to the electronic components is higher.
  • the laminate since the laminate is interposed between the heating plate and the sealing sheet, a plurality of electronic components are sealed with a large-area sealing sheet having an outer peripheral length of 500 mm or more. In addition, sufficient followability of the sealing sheet to the electronic component can be ensured.
  • the length of the outer periphery of the sealing sheet refers to the entire length around the outside of the sealing sheet.
  • the sealing sheet is rectangular, [(vertical length) ⁇ 2 + ( Horizontal length) ⁇ 2].
  • the sealing sheet is circular, it means the length of the entire circumference [2 ⁇ ⁇ ⁇ (radius)].
  • the sealing sheet is preferably formed by applying a kneaded material.
  • the kneaded material is applied to form a sealing sheet, the thickness can be easily adjusted.
  • air entrainment is suppressed when the sealing sheet is formed.
  • thickness adjustment is easy and the sheet
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is preferably 100000 Pa ⁇ s or less.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet is 100000 Pa ⁇ s or less, the embeddability of the electronic component in the sealing sheet can be improved.
  • the manufacturing method of the electronic component device is as follows: Step A for preparing a laminate in which a plurality of electronic components are mounted on a mounted body; Step B for preparing a thermosetting sealing sheet having an outer peripheral length of 500 mm or more; Placing the laminate on the heating plate with the surface on which the electronic component is mounted facing up, and placing the sealing sheet on the surface of the laminate on which the electronic component is mounted; and After the step C, there is provided at least a step D in which heat pressing is performed to embed and seal the electronic component in the sealing sheet.
  • the electronic component is not particularly limited as long as it is mounted on an object to be mounted and exhibits a function as an electronic component.
  • a SAW (Surface Acoustic Wave) filter ; Micro Electro Mechanical Systems); ICs such as LSI; semiconductor elements such as transistors; capacitors; electronic devices such as resistors.
  • the mounted body is not particularly limited, and examples thereof include a printed wiring board and a semiconductor wafer.
  • a semiconductor element for example, a semiconductor chip
  • a semiconductor wafer is used as the mounted body, and a CoW (chip on wafer) connection is performed.
  • CoW chip on wafer
  • 1 to 6 are schematic sectional views for explaining a method for manufacturing an electronic component device according to an embodiment of the present invention.
  • a stacked body 20 in which a plurality of semiconductor chips 23 are mounted on a semiconductor wafer 22 is prepared (step A).
  • the semiconductor chip 23 can be formed by dicing a semiconductor wafer on which a circuit is formed by a known method.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • the semiconductor chip 23 and the semiconductor wafer 22 are electrically connected through protruding electrodes such as bumps (not shown). Further, the distance between the semiconductor chip 23 and the semiconductor wafer 22 can be set as appropriate, and is generally about 15 to 50 ⁇ m. This gap may be filled with sealing resin (underfill).
  • a thermosetting sealing sheet 10 having an outer peripheral length of 500 mm or more is prepared (Step B).
  • the sealing sheet 10 may be prepared in a state of being laminated on a support such as a polyethylene terephthalate (PET) film.
  • PET polyethylene terephthalate
  • the support may be subjected to a mold release treatment in order to easily peel off the sealing sheet 10.
  • the sealing sheet 10 has an outer peripheral length of 500 mm or more, and preferably 800 mm or more.
  • seat 10 for sealing is not specifically limited, Considering a practical range, it can be 3000 mm or less, for example.
  • the peripheral length of the plurality of semiconductor chips 23 is 500 mm. Even when the sealing sheet 10 having a large area as described above is used for sealing, it is possible to ensure sufficient followability of the sealing sheet 10 to the semiconductor chip 23.
  • the sealing sheet 10 preferably contains an epoxy resin and a phenol resin as a curing agent. Thereby, favorable thermosetting is obtained.
  • the epoxy resin is not particularly limited.
  • triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
  • a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
  • These phenolic resins may be used alone or in combination of two or more.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
  • a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic component, a to-be-mounted body, etc. is acquired favorably as it is 2.5 weight% or more.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
  • the sealing sheet 10 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
  • thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluorine resin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 1.5% by weight or more, and more preferably 2.0% by weight or more. A softness
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 6% by weight or less, and more preferably 4% by weight or less. Adhesiveness with an electronic component or a to-be-mounted body is favorable in it being 4 weight% or less.
  • the sealing sheet 10 preferably contains an inorganic filler.
  • the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
  • quartz glass, talc, silica such as fused silica and crystalline silica
  • alumina aluminum nitride
  • nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the content of the inorganic filler in the sealing sheet 10 is preferably 85 to 95% by weight, more preferably 88 to 95% by weight with respect to the entire sealing sheet 10.
  • the content of the inorganic filler is 85% by weight or more with respect to the entire sealing sheet 10
  • the mechanical expansion due to thermal shock can be suppressed by suppressing the coefficient of thermal expansion low.
  • the content of the inorganic filler is 95% by mass or less with respect to the entire sealing sheet 10, flexibility, fluidity, and adhesiveness are further improved.
  • the sealing sheet 10 contains a curing accelerator.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 10 can be satisfactorily produced.
  • the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
  • the sealing sheet 10 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
  • a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
  • the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
  • the content of the flame retardant component in the sealing sheet 10 is preferably 10% by weight or more and more preferably 15% by weight or more in the total organic components (excluding inorganic fillers). A flame retardance is favorably acquired as it is 10 weight% or more.
  • the content of the thermoplastic resin in the sealing sheet 10 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
  • the sealing sheet 10 contains a silane coupling agent.
  • the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
  • the content of the silane coupling agent in the sealing sheet 10 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
  • the sealing sheet 10 preferably contains a pigment.
  • the pigment is not particularly limited, and examples thereof include carbon black.
  • the content of the pigment in the sealing sheet 10 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained when marking is performed by laser marking or the like. When the content is 2% by weight or less, a cured product strength is sufficiently obtained.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 100000 Pa ⁇ s or less, and more preferably 50000 Pa ⁇ s or less.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is 100000 Pa ⁇ s or less, the embedding property of the semiconductor chip 23 (electronic component) in the sealing sheet 10 can be improved.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is preferably 1000 Pa ⁇ s or more, more preferably 10,000 Pa ⁇ s or more, further preferably more than 20000 Pa ⁇ s, and 25000 Pa. It is particularly preferred that it is greater than s.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 is 1000 Pa ⁇ s or more, when the sealing sheet 10 is disposed on the laminate 20, the outer peripheral portion of the sealing sheet 10 (directly below) It is possible to suppress the portion where there is no electronic component) from drooping, and to suppress pressing in a state where air is trapped between the sealing sheet and the mounting substrate. As a result, voids are less likely to occur in the electronic component device obtained after pressing.
  • the minimum melt viscosity at 0 to 200 ° C. of the sealing sheet 10 can be controlled by the addition amount of a thermoplastic resin, a thermosetting resin, an inorganic filler or the like.
  • the encapsulating sheet 10 may have a single layer structure or a multilayer structure in which two or more encapsulating sheets are laminated, but there is no risk of delamination and the sheet thickness is highly uniform.
  • a single layer structure is preferred because it is easy to do.
  • the thickness of the sealing sheet 10 is not particularly limited, but is, for example, 50 ⁇ m to 2000 ⁇ m from the viewpoint of use as a sealing sheet.
  • seat 10 for sealing is not specifically limited, The method of coating the kneaded material obtained by preparing the kneaded material of the resin composition for forming the sheet
  • seat 10 for sealing can be produced without using a solvent, it can suppress that the electronic component (semiconductor chip 23) is influenced by the volatilized solvent.
  • a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape.
  • the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C.
  • the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
  • the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
  • the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
  • the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
  • the kneaded material after melt-kneading is applied in a high temperature state without cooling.
  • the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
  • the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
  • the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling.
  • the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
  • the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
  • the sealing sheet 10 can also be obtained by dissolving and dispersing a resin or the like for forming the sealing sheet 10 in an appropriate solvent to adjust the varnish and coating the varnish.
  • Step of arranging sealing sheet and laminate After the step of preparing the laminate (step A) and the step of preparing the sealing sheet (step B), the semiconductor chip 23 is placed on the lower heating plate 32 by the semiconductor chip 23 as shown in FIG. While arrange
  • the laminated body 20 may be first disposed on the lower heating plate 32, and then the sealing sheet 10 may be disposed on the laminated body 20, and the sealing sheet 10 may be disposed on the laminated body 20. May be laminated first, and then a laminate in which the laminate 20 and the sealing sheet 10 are laminated may be disposed on the lower heating plate 32.
  • the semiconductor chip 23 (electronic component) is embedded in the sealing sheet 10 by hot pressing with the lower heating plate 32 and the upper heating plate 34 (step D).
  • the sealing sheet 10 functions as a sealing resin for protecting the semiconductor chip 23 and its accompanying elements from the external environment. Thereby, the structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is obtained.
  • the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
  • the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa
  • the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
  • the pressure reducing conditions the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the reduced pressure holding time (the time from the start of pressure reduction to the start of pressing) is, for example, 5 to 600 seconds. Yes, preferably 10 to 300 seconds.
  • the electronic sheet device 28 is formed by thermosetting the sealing sheet 10 (see FIG. 5). Specifically, for example, the sealing body 28 is obtained by heating the entire structure 26 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10.
  • the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
  • the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
  • the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
  • the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
  • you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
  • the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
  • the sealing body 28 may be diced (see FIG. 6).
  • the electronic component device 29 in units of the semiconductor chip 23 can be obtained.
  • rewiring and bumps are formed on the electronic component device 29 (on the surface of the semiconductor wafer 22 opposite to the semiconductor chip 23) and mounted on a separate substrate (not shown).
  • a substrate mounting process can be performed.
  • a known device such as a flip chip bonder or a die bonder can be used.
  • FOWLP fan-out type wafer level package
  • the stacked body 20 is arranged on the lower heating plate 32 with the surface on which the semiconductor chip 23 is mounted facing upward.
  • seat 10 for sealing is arrange
  • the semiconductor chip 23 is embedded in the sealing sheet 10 by hot pressing (step D). Therefore, a step of embedding the semiconductor chip 23 in the sealing sheet 10 is performed in a state where the laminate 20 is interposed between the lower heating plate 32 and the sealing sheet 10. Since the laminate 20 is interposed between the lower heating plate 32 and the sealing sheet 10, the heat of the lower heating plate 32 is difficult to be transmitted to the sealing sheet 10.
  • the encapsulating sheet 10 is hard to be thermally cured, and can maintain a low viscosity state, that is, a state with high fluidity. In this state, the embedding process is performed. As a result, the followability of the sealing sheet 10 to the semiconductor chip 23 can be improved. In particular, when a plurality of semiconductor chips 23 are sealed with a large area sealing sheet 10 having an outer peripheral length of 500 mm or more, the followability of the sealing sheet 10 to the semiconductor chips 23 is higher. Requested. In the present embodiment, since the laminated body 20 is interposed between the lower heating plate 32 and the sealing sheet 10, a plurality of semiconductor chips 23 for sealing with a large area whose outer periphery length is 500 mm or more. Even when sealing with the sheet 10, it is possible to ensure sufficient followability of the sealing sheet 10 to the semiconductor chip 23.
  • the present invention is not limited to this example, and the electronic component other than the semiconductor chip is used. Even when a thing other than a semiconductor wafer is used as the mounted body, the manufacturing method of the electronic component device can be applied.
  • Epoxy resin a YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq, softening point 80 ° C.)
  • Phenol resin a MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq, softening point 67 ° C.)
  • Curing accelerator a 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • Thermoplastic resin a SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
  • a board on which electronic components were mounted was prepared.
  • a semiconductor wafer having a diameter of 300 mm and a thickness of 700 ⁇ m was used as the substrate.
  • the electronic component is a semiconductor chip having a length of 10 mm, 10 mm, and a thickness of 500 ⁇ m, and a vertical distance of 10 mm (distance between the end of one electronic component and the end of the next electronic component) is formed on the substrate.
  • the height of the pump is 50 ⁇ m.
  • FIG. 7 is a schematic front view for explaining a method for evaluating embedding in the embodiment.
  • the case where the distance Z (see FIG. 7) of the gap from the end of the chip was less than 200 ⁇ m was evaluated as “ ⁇ ”
  • the case where it was 200 ⁇ m or more and less than 500 ⁇ m was evaluated as “ ⁇ ”
  • the results are shown in Table 1.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un procédé pour fabriquer un dispositif à semi-conducteur, ledit procédé comprenant les étapes suivantes : l'étape A, dans laquelle un stratifié qui comprend une pluralité de composants électroniques montés sur un corps de montage est préparé ; l'étape B, dans laquelle une feuille d'étanchéité thermodurcissable, dont le périmètre mesure au moins 500 mm de long, est préparée ; l'étape C, dans laquelle le stratifié est placé par-dessus une plaque chauffante, avec la surface du stratifié sur lequel les composants électroniques sont montés tournée vers le haut, et la feuille d'étanchéité est placée par-dessus la surface du stratifié sur lequel les composants électroniques sont montés ; et l'étape D, dans laquelle, après l'étape C, un pressage à chaud est utilisé pour enrober et étanchéifier les composants électroniques dans la feuille d'étanchéité.
PCT/JP2014/060798 2013-05-23 2014-04-16 Procédé pour fabriquer un dispositif à composants électroniques WO2014188826A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020157031253A KR20160013010A (ko) 2013-05-23 2014-04-16 전자 부품 장치의 제조 방법
SG11201509535QA SG11201509535QA (en) 2013-05-23 2014-04-16 Method of Manufacturing Electronic Component Device
CN201480028636.5A CN105229780A (zh) 2013-05-23 2014-04-16 电子部件装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013108842A JP2014229769A (ja) 2013-05-23 2013-05-23 電子部品装置の製造方法
JP2013-108842 2013-05-23

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WO2014188826A1 true WO2014188826A1 (fr) 2014-11-27

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JP2013074184A (ja) * 2011-09-28 2013-04-22 Nitto Denko Corp 半導体装置の製造方法

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TW201503269A (zh) 2015-01-16

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