Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
  • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
  • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
  • H01L21/0274—Photolithographic processes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
  • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
  • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/31051—Planarisation of the insulating layers
  • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
  • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
  • H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
  • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Definitions

• This disclosure relates to substrate processing, and, more particularly, to techniques for patterning substrates including patterning semiconductor wafers.
• creating patterned layers comprises the application of a thin layer of radiation- sensitive material, such as photoresist, to an upper surface of a substrate.
• This radiation-sensitive material is transformed into a relief pattern which can be used as an etch mask to transfer a pattern into an underlying layer on a substrate.
• Patterning of the radiation-sensitive material generally involves exposure to actinic radiation through a reticle (and associated optics) onto the radiation-sensitive material using, for example, a photo-lithography system. This exposure can then be followed by the removal of irradiated regions of the radiation-sensitive material (as in the case of positive photoresist), or non-irradiated regions (as in the case of negative resist) using a developing solvent.
• This mask layer can comprise multiple sub-layers.
• Pitch reduction techniques are termed (often somewhat erroneously yet routinely) "pitch multiplication” as exemplified by "pitch doubling" et cetera.
• Pitch reduction techniques can extend the capabilities of photolithography beyond feature size limitations (optical resolution limitations). That is, conventional multiplication of pitch (more accurately pitch reduction, or multiplication of pitch density) by a certain factor involves reducing a target pitch by a specified factor. Double patterning techniques used with 193 nm immersion lithography are conventionally considered as one of the most promising techniques to pattern 22 nm nodes and smaller.
• SADP self-aligned spacer double patterning
• SAQP self-aligned quadruple patterning
• Techniques disclosed herein provide a method for pitch reduction (increasing pitch/feature density) for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts where specified. Thus, methods herein provide a sequence of materials that provide selective self-alignment. Combined with an underlying transfer or
• One embodiment includes a method of patterning a substrate.
• the method includes providing a substrate having mandrels positioned on an underlying layer, with the mandrels comprised of a first material.
• First sidewall spacers are formed on exposed sidewalls of the mandrels, with the first sidewall spacers comprised of a second material.
• Second sidewall spacers are formed on exposed (uncovered) sidewalls of the first sidewall spacers, with the second sidewall spacers comprised of a third material.
• Fill structures are formed that fill open spaces defined between exposed sidewalls of second sidewall spacers that face each other, with the fill structures comprised of a fourth material.
• Top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all uncovered.
• the first material, the second material, the third material and the fourth material are all chemically different from each other in that one or more of the materials can be selectively etched with respect to remaining materials.
• FIGS. 1 -7 are cross-sectional side views of an example substrate segment according to embodiments disclosed herein.
• FIG. 8 is a cross-sectional perspective view of an example substrate segment according to embodiments disclosed herein.
• FIGS. 9-13 are cross-sectional side views of an example substrate segment according to embodiments disclosed herein.
• FIGS. 14-21 are a top views of an example substrate segment according to embodiments disclosed herein.
• FIGS. 22-24 are cross-sectional side views of an example substrate segment according to embodiments disclosed herein.
• Techniques disclosed herein provide a method and fabrication structure for pitch reduction (increasing pitch/feature density) for creating high- resolution features and also for cutting on pitch of sub-resolution features.
• Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. This can include creating a repeating pattern of materials having a pattern of A-B-C-D-C-B-A, with half pitches below 40 nanometers and even below 12 nanometers and smaller. Critical dimensions of materials can be controlled by type of deposition thickness, such as with atomic layer deposition, instead of being controlled just by optical resolution.
• One embodiment includes a method of patterning a substrate. Such a method is useful for microfabri cation of semiconductor devices and integrated circuits.
• the method includes providing a substrate 105 having mandrels 1 1 1 positioned on an underlying layer 1 15.
• the mandrels 1 1 1 are comprised of a first material.
• the substrate 105 can include a silicon wafer.
• One or more additional underlying layers and/or buried structures can be included Attorney Docket No.: TTCA-571W01 depending on a substrate's progress within a given fabrication flow. There are many different materials from which the mandrels can be constructed.
• Mandrels 1 1 1 can be formed using conventional patterning techniques. For example, mandrels 1 1 1 can be a result of self-aligned double patterning or self-aligned quadruple patterning techniques and thus can have sub- resolution half pitches.
• First sidewall spacers 1 12 are formed on exposed sidewalls of the mandrels 1 1 1 as shown in FIG. 3.
• First sidewall spacers 1 12 are comprised of a second material.
• FIG. 3 shows spacers formed on vertical sidewalls of the mandrels 1 1 1 .
• Forming the first sidewall spacers 1 12 can include conformally depositing the second material on the substrate.
• FIG. 2 shows a conformal film 122 having been deposited on the substrate 105. Such spacer formation is
• a spacer open etch can then be executed to complete formation of sidewall spacers.
• spacer open etch is typically a directional etch that removes the second material from a top surface of the mandrels 1 1 1 and from the underlying layer 1 15 in between second material deposited on sidewalls of the mandrels 1 1 1 (except where material on sidewalls of mandrels covers the underlying layer 1 15).
• Second sidewall spacers 1 13 are formed on exposed sidewalls of the first sidewall spacers 1 12 as shown in FIG. 5.
• the second sidewall spacers 1 13 are comprised of a third material.
• FIG. 5 shows spacers formed on vertical sidewalls of the first sidewall spacers 1 12.
• Forming the second sidewall spacers 1 13 can include conformally depositing the third material on the substrate.
• FIG. 4 shows a conformal film 123 having been deposited on the substrate 105. Such spacer formation is conventionally known.
• highly conformal deposition techniques such as atomic layer deposition (ALD) can be selected for depositing spacer material, which approximately uniformly covers existing structures on the substrate, which can include mandrels 1 1 1 , first sidewall spacers 1 12, and underlying layer 1 15.
• a spacer open etch can then be executed to complete formation of sidewall spacers.
• Such a spacer open etch is typically a directional etch that removes the third material from a top surface of the mandrels 1 1 1 , the first Attorney Docket No.: TTCA-571 W01 sidewall spacers 1 12, and from the underlying layer 1 15 in between third material deposited on sidewalls of the first sidewall spacers 1 12 (except where material on vertical sidewalls of structures covers the underlying layer 1 15). At least a portion of the first sidewall spacers 1 12 define open space between each other prior to forming second sidewall spacers.
• mandrel half-pitch can be shortened such that forming first sidewall spacers completely fills space between selected mandrel pairs and thus prevents forming second sidewall spacers in such a location.
• varying pitch of the mandrels can cause some merged spacers, either from the first sidewall spacers or the second sidewall spacers.
• Such a fabrication technique can be beneficial, for example, in forming power rails for integrated circuits.
• fill structures 1 14 are then formed on the substrate 105.
• Fill structures 1 14 fill open spaces defined between exposed sidewalls of second sidewall spacers 1 13 that face each other (prior to forming the fill structures 1 14).
• the fill structures 1 14 are comprised of a fourth material.
• Fill structures 1 14 are formed such that top surfaces of the mandrels 1 1 1 , the first sidewall spacers 1 12, the second sidewall spacers 1 13, and the fill structures 1 14 are all uncovered. Material selection during formation is such that the first material, the second material, the third material and the fourth material are all chemically different from each other.
• Forming the fill structures 1 14 can include depositing an overburden material 124 of the fourth material on the substrate.
• overburden material 124 deposited on substrate 105, which can entirely cover existing structures.
• Various deposition techniques for depositing the overburden material 124 can be used including spin-on deposition. After deposition, overburden material 124 can be etched back until the fourth material is recessed below top surfaces of the second sidewall spacers 1 13. The fourth material would also be recessed below top surfaces of first sidewall spacers 1 12 and mandrels 1 1 1 .
• FIG. 8 shows a perspective view of a substrate segment having four different line arrays from the mandrels 1 1 1 , first sidewall spacers 1 12, second sidewall spacers 1 13, and fill structures 1 14.
• the first material, the second material, the third material and the fourth material are all chemically different from each other in that a first etch chemistry selectively etches the first material with respect to remaining materials, a second etch chemistry selectively etches the second material with respect to remaining materials, a third etch chemistry Attorney Docket No.: TTCA-571 W01 selectively etches the third material with respect to remaining materials, and a fourth etch chemistry selectively etches the fourth material with respect to remaining materials.
• any of the four different materials can be etched selective to remaining materials.
• the first material, the second material, the third material and the fourth material are all chemically different from each other in that when etching using a predetermined etch chemistry a given two materials are selectively etched with respect to remaining materials.
• the first material, the second material, the third material and the fourth material are all chemically different from each other in that etching the substrate using a
• predetermined etch chemistry selectively etches a given three materials with respect to remaining materials.
• at least two materials of the first material, the second material, the third material and the fourth material are
• an etching process can be executed using a predetermined etch chemistry that etches one or more selected materials with respect to remaining materials.
• two of the first material, the second material, the third material and the fourth material are a same material in that a first etch
• two or more materials are a same material and thus inherently have matching etch characteristics.
• Certain differing materials can etch similarly with particular chemistries that are compatible with etching both, and thus there are different methods to create features that can be etched simultaneously.
• Materials of a same material can be, for example, adjacent lines or alternating lines on a given substrate.
• FIGS. 9-13 an alternative method is disclosed that can be beneficial in recessing the overburden material 124.
• This method involves partially etching into underlying layer 1 15 when forming the first sidewall spacers 1 12.
• FIG. 9 is similar to FIG. 3, except that the spacer open etch includes etching partially into the underlying layer 1 15. Note that a top surface of underlying layer 1 15, that is exposed to directional etchants, is now below a bottom surface of mandrels 1 1 1 .
• a benefit of this recess is more apparent in FIG. 10 as conformal film 123 is deposited on structures with relatively taller sidewalls.
• FIG. 1 1 shows second sidewall spacers 1 13 as taller than first sidewall spacers 1 12.
• overburden material 124 Attorney Docket No.: TTCA-571 W01 is deposited (FIG. 12)
• the amount of overburden material 124 deposited between second sidewall spacers 1 13 is taller which means more height or tolerance when executing an etch back to form fill structures 1 14, as shown in FIG. 13.
• Etch chemistries can be used to selectively etch one or more of the four materials.
• Etch chemistries processes gasses and gas combinations
• gases are known that can selectively etch particular types of materials relative to other types of materials at various selectivity ratios.
• the underlying layer 1 15 can be comprised of a fifth material that is chemically different from the first material, the second material, the third material and the fourth material. With a fifth material different from the other four materials, the underlying layer can be used as a memorization layer or transfer layer for creating composite patterns to transfer into other layers.
• FIG. 14 is a top view of an example substrate segment from FIG. 8. Note that lines of four different materials have been formed for further patterning operations. In general, at least a portion of the substrate can include a repeating pattern of lines in which the material type pattern is A-B-C-D-C-B-A as shown in segment 130. Thus, depending on type of material, various spacing distances are available. For example, between repeating instances of Material A or Material D there are 5 lines of differing materials. These materials can correspond to mandrel material and fill structure material.
• a first etch mask 141 can be provided on the substrate that defines openings that uncover the first material, the second material, the third material and the fourth material, as shown in FIG. 15. Note that such an etch mask can define openings that can be linear with smaller dimensions in one direction. First etch mask 141 , and corresponding openings, can be defined by a conventional
• a first-selected material is selectively etched using the first etch mask 141 and a first etch chemistry.
• FIG. 16 shows an example result of this selective etching. Note that unmasked portions of Material A have been removed and underlying layer 1 15 is now visible at those locations. Note also that the remaining materials were not removed during this etch step.
• FIG. 17 illustrates these results with the first etch mask 141 removed.
• a second selected Attorney Docket No.: TTCA-571 W01 material can be selectively etched using the first etch mask and a second chemistry. Alternatively, one or more materials can be selectively etched relative to remaining material or materials.
• a second etch mask 142 can be created on the substrate that defines openings that uncover the first material, the second material, the third material and the fourth material.
• One or more unmasked materials can then be selectively etched relative to remaining materials using the second etch mask and a second etch chemistry.
• FIG. 18 shows unmasked portions of Material C having been etched.
• FIG. 19 shows the substrate segment with second etch mask 142 removed.
• FIG. 20 shows results of transferring a composite pattern through the underlying layer.
• Materials B and D have been kept or reversed to be combined with transferred segments or cuts to provide the structure shown in FIG. 21 .
• a pitch of the mandrels is less than an optical resolution of a given photolithography system.
• half-pitch spacing of the mandrels can be less than 40 nanometers, 12 nanometers, or even less, and techniques herein can make cuts between such narrow pitch lines using conventional photo-lithography systems.
• providing the substrate 105 having mandrels 1 1 1 positioned on an underlying layer includes the mandrels being comprised of two materials. A lower portion 151 of the mandrels being comprised of the first material, and an upper portion 152 of the mandrels being comprised of a sixth material. An example of this is shown in FIG. 22.
• the first material is selected as a stop material layer that is resistant to chemical-mechanical polishing, such as a nitride. Process flow then continues as previously described in FIGS. 1 -6 to the point at which overburden material 124 is deposited on the substrate 105, as shown in FIG. 23.
• This embodiment includes a planarizing step that planarizes the substrate by executing a chemical-mechanical polishing process that planarizes the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures down to a top surface of the lower portion 151 of the mandrels 1 1 1 such that top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all coplanar, as shown in FIG. 24.
• One advantage Attorney Docket No.: TTCA-571 W01 of such a technique is to remove curved, pointed, or angled surfaces of sidewall spacers.
• Another embodiment includes a patterned structure on a
• This patterned structure includes a nanofabricated structure on a substrate having lines of four different materials.
• the lines of four different materials define a repeating sequence of A-B-C-D-C-B-A in at least a portion of the substrate.
• a top surface of each line is uncovered and thus can be directionally etched.
• At least two of the lines have been created as sidewall spacers using conformal deposition followed by directional etching.
• Lines of respective materials have a half-pitch spacing of less than 16 nanometers.
• the four different materials are chemically different from each other in that one or more materials can be selectively etched with respect to remaining materials.
• FIG. 8 is an illustration of an example embodiment of this patterned structure.
• This patterned structure is typically not a final structure, but an enabling structure for subsequent patterning, cutting on pitch, et cetera.
• a matrix of selectable materials and material combinations can be created to create features at desired locations and lengths that are below resolution capabilities of conventional photolithography systems.
• etched features themselves can be transferred into memorization layers and/or target layers, and can also be used to reverse patterns. Accordingly, five different materials can be accessed for selective etching.
• Self-alignment can be selected at various places on a substrate using an etch mask and the differential etch
• selectivities of the different materials are different.
• a designer can select where to execute an etch and have that etch be self-aligned at sub-resolution dimensions. For example, if a given contact pattern from a photoresist material is relatively large and spans multiple materials, a contact will only be etched at one of the materials within that contact pattern opening.
• substrate or "target substrate” as used herein generically refers to an object being processed in accordance with the invention.
• the substrate may include any material portion or structure of a device, particularly a semiconductor or other electronics device, and may, for example, be a base substrate structure, such as a Attorney Docket No.: TTCA-571 W01 semiconductor wafer, reticle, or a layer on or overlying a base substrate structure such as a thin film.
• substrate is not limited to any particular base structure, underlying layer or overlying layer, patterned or un-patterned, but rather, is contemplated to include any such layer or base structure, and any combination of layers and/or base structures.
• the description may reference particular types of substrates, but this is for illustrative purposes only.

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• Chemical Kinetics & Catalysis (AREA)
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• 2016
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