WO2017047671A1 - Matériau de connexion - Google Patents

Matériau de connexion Download PDF

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Publication number
WO2017047671A1
WO2017047671A1 PCT/JP2016/077197 JP2016077197W WO2017047671A1 WO 2017047671 A1 WO2017047671 A1 WO 2017047671A1 JP 2016077197 W JP2016077197 W JP 2016077197W WO 2017047671 A1 WO2017047671 A1 WO 2017047671A1
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Prior art keywords
conductive
particles
conductive film
film
resin
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PCT/JP2016/077197
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English (en)
Japanese (ja)
Inventor
達朗 深谷
朋之 石松
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デクセリアルズ株式会社
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Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to KR1020187006192A priority Critical patent/KR20180036770A/ko
Priority to KR1020237001742A priority patent/KR102707315B1/ko
Priority to CN201680050992.6A priority patent/CN107925175A/zh
Priority to KR1020207018568A priority patent/KR20200080337A/ko
Publication of WO2017047671A1 publication Critical patent/WO2017047671A1/fr
Priority to HK18110689.5A priority patent/HK1251356A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal

Definitions

  • the present invention relates to a connection material for electrically connecting circuit members with conductive particles.
  • Patent Documents 1 and 2 describe a technique for reducing resistance by providing protrusions on conductive particles.
  • the conductive particles described in Patent Document 1 since the protruding core material is directly attached to the base material (resin particles), the protruding core material is buried in the base material by the pressure during mounting, and the pressure applied to the electrode Decrease. For this reason, for example, in an IZO electrode having a smooth surface, it is difficult to obtain a low connection resistance value.
  • the present invention has been made in view of such a situation, and an object thereof is to provide a connection material capable of obtaining a low connection resistance value.
  • connection material according to the present invention includes resin particles, a first conductive film covering the resin particles, and a plurality of the conductive materials disposed on the first conductive film, and has a Vickers hardness. Containing conductive particles having a protruding core material having a thickness of 1500 to 5000, a second conductive film covering the first conductive film and the protruding core material, and having a minimum melt viscosity of 1 to 100000 Pa. -S.
  • connection structure which concerns on this invention mounts a 2nd circuit member on the 1st circuit member through the connection material containing electroconductive particle, The said 2nd circuit member Heating and pressing with a crimping tool to cure the connection material, wherein the conductive particles are resin particles, a first conductive coating covering the resin particles, and the first metal coating.
  • the conductive particles are resin particles, a first conductive coating covering the resin particles, and the first metal coating.
  • a plurality of projecting core members arranged on the top and having a Vickers hardness of 1500 to 5000, and a second conductive film covering the first metal layer and the projecting core material; The melt viscosity is 1 to 100,000 Pa ⁇ s.
  • a connection structure includes a first circuit member, a second circuit member, and a connection cured film that connects the first circuit member and the second circuit member,
  • the connection cured film includes a resin particle, a first conductive film covering the resin particle, a plurality of disposed on the first metal film, and a protruding core material having a Vickers hardness of 1500 to 5000; Conductive particles having a first metal layer and a second conductive film covering the protruding core material are provided.
  • the binder between the conductive particles and the electrode is sufficiently eliminated, and the pressure applied to the electrode is sufficiently obtained, so that a low connection resistance value can be obtained.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of conductive particles.
  • connection material 2. Manufacturing method of connection structure Example
  • connection material includes resin particles, a first conductive film covering the resin particles, and a plurality of disposed cores on the first conductive film, and a protruding core material having a Vickers hardness of 1500 to 5000 And conductive particles having a first conductive coating and a second conductive coating covering the protruding core material, and a minimum melt viscosity of 1 to 100,000 Pa ⁇ s.
  • connection material is not particularly limited, and can be appropriately selected according to the application such as a film shape or a paste shape.
  • the connection material include an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), and the like.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • examples of the curing type of the conductive material include a thermosetting type, a photocuring type, a photothermal combined curing type, and the like, and can be appropriately selected depending on the application.
  • thermosetting anisotropic conductive film containing conductive particles will be described as an example.
  • thermosetting type for example, a cationic curing type, an anion curing type, a radical curing type, or a combination thereof can be used.
  • an anion curing type anisotropic conductive film will be described.
  • the anion curable anisotropic conductive film contains a film-forming resin, an epoxy resin, and an anionic polymerization initiator as a binder.
  • the blending amount of the conductive particles in the anisotropic conductive film is preferably 5 to 15% by volume with respect to the binder volume.
  • the film-forming resin corresponds to, for example, a high-molecular weight resin having an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film formation.
  • the film-forming resin include various resins such as phenoxy resin, polyester resin, polyurethane resin, polyester urethane resin, acrylic resin, polyimide resin, and butyral resin. These may be used alone or in combination of two or more. May be used. Among these, it is preferable to use a phenoxy resin from the viewpoints of film formation state, connection reliability, and the like.
  • the trade name “YP-50” of Nippon Steel & Sumikin Chemical Co., Ltd. can be cited.
  • the epoxy resin forms a three-dimensional network structure and imparts good heat resistance and adhesiveness, and it is preferable to use a solid epoxy resin and a liquid epoxy resin in combination.
  • the solid epoxy resin means an epoxy resin that is solid at room temperature.
  • the liquid epoxy resin means an epoxy resin that is liquid at room temperature.
  • the normal temperature means a temperature range of 5 to 35 ° C. defined by JIS Z 8703.
  • the solid epoxy resin is not particularly limited as long as it is compatible with a liquid epoxy resin and is solid at room temperature.
  • Bisphenol A type epoxy resin, bisphenol F type epoxy resin, polyfunctional type epoxy resin, dicyclopentadiene type epoxy resin , Novolak phenol type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, and the like are examples of Bisphenol A type epoxy resin, bisphenol F type epoxy resin, polyfunctional type epoxy resin, dicyclopentadiene type epoxy resin , Novolak phenol type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, and the like. Among these, one kind can be used alone, or two or more kinds can be used in combination.
  • the liquid epoxy resin is not particularly limited as long as it is liquid at normal temperature, and examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac phenol type epoxy resin, naphthalene type epoxy resin, and the like. Can be used alone or in combination of two or more. In particular, it is preferable to use a bisphenol A type epoxy resin from the viewpoint of film tackiness and flexibility. As a specific example available on the market, a trade name “EP828” of Mitsubishi Chemical Corporation may be mentioned.
  • anionic polymerization initiator a commonly used known curing agent can be used.
  • one kind can be used alone, or two or more kinds can be used in combination.
  • microcapsule type latent curing agent having an imidazole-modified product as a core and a surface thereof coated with polyurethane.
  • a trade name “Novacure 3941” of Asahi Kasei E-Materials Co., Ltd. can be cited.
  • a silane coupling agent examples include epoxy, methacryloxy, amino, vinyl, mercapto sulfide, ureido and the like.
  • the stress relaxation agent examples include a hydrogenated styrene-butadiene block copolymer and a hydrogenated styrene-isoprene block copolymer.
  • the inorganic filler examples include silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like.
  • the minimum melt viscosity of the anisotropic conductive film is 1 to 100,000 Pa ⁇ s, more preferably 10 to 10,000 Pa ⁇ s.
  • the optimization of the minimum melt viscosity depends on the compression deformation characteristics of the conductive particles, but if the minimum melt viscosity is too high, the binder between the conductive particles and the electrode cannot be sufficiently eliminated during thermocompression bonding. Resistance tends to increase. In particular, it is difficult for the conductive particles having protrusions to sufficiently eliminate the binder between the conductive particles and the electrode during thermocompression bonding.
  • connection resistance increases immediately after thermocompression bonding or bubbles are generated in the connection portion.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of conductive particles.
  • the conductive particles include a resin core particle 10, a first conductive layer 11 covering the resin core particle 10, a plurality of protruding core members 12 attached to the surface of the conductive layer 11, the first conductive layer 11 and the protruding core. And a second conductive layer 13 covering the material 12.
  • the resin core particle 10 examples include a benzoguanamine resin, an acrylic resin, a styrene resin, a silicone resin, and a polybutadiene resin.
  • the resin core particle 10 has a structure in which at least two kinds of repeating units based on monomers constituting these resins are combined.
  • a copolymer is mentioned. Among these, it is preferable to use a copolymer of tetramethylolmethane tetraacrylate and divinylbenzene.
  • the resin core particle 10 preferably has a compression recovery rate of 30% or more after being compressed with a load of 5 mN. If the compression recovery rate is too low, the resistance value tends to increase after the reliability test (high temperature and high humidity test). This is because the adhesiveness of the binder is lowered by being exposed to a high-temperature and high-humidity test, and the distance between opposing terminals that are anisotropically connected is increased. If the compression recovery rate is low, the sandwiched conductive particles may not be able to follow satisfactorily and the resistance value may increase.
  • the compression recovery rate is the relationship between the load value and compression displacement when the resin particles are compressed from the center to 5 mN at a speed of 0.33 mN / sec and then the load is reduced at a speed of 0.33 mN / sec. It is obtained by measuring.
  • the ratio (L1 / L2) of the displacement (L1) from the point of reversing the load to the final unloading value and the displacement (L2) from the point of reversal to the initial unloading value is expressed in% as a compression recovery rate. It is.
  • the average particle diameter of the resin core particle 10 is preferably 1 to 10 ⁇ m, and more preferably 2 to 5 ⁇ m. If the average particle size of the resin core particle 10 is too small, the resistance value tends to increase after the reliability test (high temperature and high humidity test), and if the average particle size of the resin core particle 10 is too large, the insulating property tends to decrease. is there.
  • the average particle diameter of the resin core particles 10 can be measured using, for example, a particle size distribution measuring apparatus (trade name: Microtrac MT3100, manufactured by Nikkiso Co., Ltd.).
  • the first conductive layer 11 is preferably a metal plating layer that covers the resin core particles 10.
  • the Vickers hardness of the metal plating layer is preferably 300 to 1200. If the Vickers hardness of the metal plating layer is too low, it becomes difficult to prevent the protrusion core material 12 from being embedded in the resin core particles 10 during mounting. If the Vickers hardness of the metal plating layer is too high, there is a concern that the plating may break.
  • P Load [N]
  • d Average length of the diagonal of the dent [mm]
  • the metal plating layer is preferably nickel or a nickel alloy (HV: 500 to 700).
  • the nickel alloy include Ni—WB, Ni—WP, Ni—W, Ni—B, and Ni—P.
  • the film thickness of the first conductive layer 11 is preferably 5 nm or more. When the film thickness of the first conductive layer 11 is less than 5 nm, it becomes difficult to prevent the protruding core member 12 from being embedded in the resin core particles 10 during mounting.
  • the thickness of the plating layer can be determined, for example, by conducting cross-sectional polishing of conductive particles using a focused ion beam processing observation apparatus (FB-2100, Hitachi High-Technology Co., Ltd.), and a transmission electron microscope (H-9500, Hitachi High-Technology). The average value can be obtained by observing the cross section of any 20 conductive particles and measuring the thickness of the five plated coatings for each particle.
  • a plurality of protrusion core materials 12 are attached to the surface of the first conductive layer 11 to form protrusions 14.
  • the protruding core material 12 has a Vickers hardness of 1500 to 5000, preferably 1800 to 3300. If the Vickers hardness of the protruding core material 12 is too low, for example, in an IZO electrode having a smooth surface, the resistance value tends to increase after a reliability test (high temperature and high humidity test), and the protruding core material 12 has a high Vickers hardness. If it is too large, the first conductive layer 11 may be broken.
  • the protrusion core material 12 is preferably a metal carbide, metal carbonitride, or cermet containing one or more selected from tungsten, titanium, tantalum, and boron.
  • Specific examples include tungsten carbide (HV: 1800), tungsten carbide-titanium carbide-tantalum carbide (HV: 2400), titanium carbide (HV: 3500), titanium carbonitride (HV: 1800), boron carbide (HV: 3300). Etc. These may be used alone or in combination of two or more.
  • the average particle diameter of the protruding core material 12 is preferably 50 nm or more and 300 nm or less, more preferably 100 nm or more and 250 nm or less.
  • the number of protrusions formed on the surface of the first conductive layer 11 is preferably 50 to 200, more preferably 100 to 200. Thereby, the connection resistance between electrodes can be reduced effectively.
  • the second conductive layer 13 covers the first conductive layer 11 and the protruding core material 12 and forms the protrusions 14 raised by the plurality of first conductive layers 11.
  • the second conductive layer 13 is preferably palladium, nickel, or a nickel alloy. Examples of the nickel alloy include Ni—WB, Ni—WP, Ni—W, Ni—B, and Ni—P.
  • the total thickness of the second conductive layer 13 and the first conductive layer 11 is preferably 100 nm or more and 500 nm or less, and more preferably 50 nm or more and 200 nm or less. If the total film thickness of the first conductive layer 11 and the second conductive layer 13 is small, the plating layer is not formed and a sea-island structure is formed, so that the resistance value tends to increase. When the total film thickness of the layer 11 and the second conductive layer 13 is large, the conductive particle diameter becomes large and the insulation tends to be lowered.
  • the conductive particles having such a structure can be obtained by a method in which the first conductive layer 11 is formed on the surface of the resin core particle 10 and then the protruding core material 12 is attached to form the second conductive layer 13. it can. Moreover, as a method of attaching the protruding core material 12 on the surface of the first conductive layer 12, for example, the protruding core material 12 is placed in a dispersion of the resin core particles 10 on which the first conductive layer 11 is formed. For example, the protrusion core material 12 is accumulated on the surface of the first conductive layer 11 by, for example, van der Waals force and attached.
  • Examples of the method for forming the first conductive layer 11 and the second conductive layer 13 include a method by electroless plating, a method by electroplating, and a method by physical vapor deposition. Among these, the method by electroless plating is preferable because the formation of the conductive layer is simple.
  • the manufacturing method of the connection structure according to the present embodiment includes a step of mounting the second circuit member on the first circuit member via a connection material containing conductive particles, and the second circuit member. Heating and pressing with a crimping tool to cure the connecting material.
  • the conductive particles are a plurality of resin particles, a first conductive film covering the resin particles, and a plurality of protrusions disposed on the first metal film and having a Vickers hardness of 1500 to 5000. It has a core material and a second conductive film covering the first metal layer and the protruding core material, and the minimum melt viscosity of the connecting material is 1 to 100,000 Pa ⁇ s.
  • the first circuit member and the second circuit member are not particularly limited and can be appropriately selected according to the purpose.
  • the first circuit member include a plastic substrate, a glass substrate, a printed wiring board (PWB), and the like for LCD (Liquid Crystal Display) panel use and plasma display panel (PDP) use.
  • the second circuit member include a flexible substrate (FPC: Flexible Printed Circuit) such as an IC (Integrated Circuit), COF (Chip On Film), a tape carrier package (TCP) substrate, and the like.
  • the predetermined pressure at the time of the main pressure bonding is preferably 1 MPa or more and 150 MPa or less from the viewpoint of preventing the wiring crack of the circuit member.
  • the predetermined temperature is the temperature of the anisotropic conductive film at the time of pressure bonding, and is preferably 80 ° C. or higher and 230 ° C. or lower. Further, irradiation with light such as UV may be used in combination.
  • a thermal compression may be performed by interposing a cushioning material between the crimping tool and the second circuit member.
  • the buffer material is made of a sheet-like elastic material or plastic, and for example, Teflon (trademark), silicon rubber, or the like is used.
  • connection structure manufactured by this method has low resistance, and can reduce power consumption.
  • Example> Examples of the present invention will be described below.
  • a protruding core material is attached to metal-coated resin particles in which resin particles are coated with a first conductive coating, and this is further coated with a second conductive coating, and conductive particles having protrusions.
  • the connection structure was produced using the anisotropic conductive film containing electroconductive particle, and the conduction resistance of the connection structure was evaluated.
  • the present invention is not limited to these examples.
  • Coating process of first conductive film Resin particles having an average particle diameter of 3 ⁇ m made of a copolymer of tetramethylolmethane tetraacrylate and divinylbenzene were used as a base material. The compression recovery rate after the resin particles were compressed at a load of 5 mN was 45%. The resin particles were subjected to alkali degreasing with an aqueous sodium hydroxide solution, acid neutralization, and sensitizing with a tin dichloride solution. Thereafter, activation with a palladium dichloride solution was performed. After filtration and washing, the substrate particles are diluted with water and a plating stabilizer is added.
  • a mixed solution of nickel sulfate, sodium hypophosphite, sodium citrate, and plating stabilizer is added to this aqueous solution with a metering pump. Electroless plating was performed so as to obtain a nickel plating film having a predetermined thickness. Then, it stirred until pH became stable and it confirmed that hydrogen firing stopped. Then, the plating solution is filtered, and the filtrate is washed with water, and then dried with a vacuum dryer at 80 ° C. to obtain metal-coated resin particles in which the resin particles are coated with a nickel plating film as a first conductive film. It was.
  • Protrusion core material adhesion process After the metal-coated resin particles were dispersed by stirring with deionized water, a protruding core material was added to the aqueous solution to obtain particles having a protruding core material adhered on the nickel plating film. The number of projecting core materials adhered per particle was about 150.
  • Step of coating the second conductive film Next, alkali degreasing with an aqueous sodium hydroxide solution, acid neutralization, and sensitizing with a tin dichloride solution were performed on the particles to which the protruding core material was adhered. Thereafter, activation with a palladium dichloride solution was performed. After filtration and washing, the substrate particles are diluted with water and a plating stabilizer is added. Then, a mixed solution of nickel sulfate, sodium hypophosphite, sodium citrate, and plating stabilizer is added to this aqueous solution with a metering pump. Electroless plating was performed so as to obtain a nickel plating film having a predetermined thickness.
  • the plating solution was filtered and the filtrate was washed with water, and then dried with a vacuum dryer at 80 ° C. to obtain particles coated with a nickel plating film as a second conductive film.
  • the film thickness of the plating film was determined by conducting cross-sectional polishing of conductive particles using a focused ion beam processing observation device (FB-2100, Hitachi High-Technology Co., Ltd.), and a transmission electron microscope (H-9500, Hitachi High-Technology Co., Ltd. )) was used to observe the cross section of 20 arbitrary conductive particles, and the average value was calculated by measuring the thickness of the plated coating at five locations for each particle.
  • FB-2100 focused ion beam processing observation device
  • H-9500 Hitachi High-Technology Co., Ltd.
  • the minimum melt viscosity of the anisotropic conductive film was measured using a rotary rheometer (TA Instruments) under the conditions of a temperature rising rate of 10 ° C./min; a force during measurement of 1N constant;
  • a mounting body of IZO wiring was produced.
  • COF (Dexerials Co., Ltd. COF for evaluation, 50 ⁇ m pitch, Cu 8 ⁇ mt-Sn plating 38 ⁇ m) and IZO solid glass (Dexerials Co., Ltd. IZO solid glass, IZO thickness 300 nm, glass thickness 0.7 mm) Connected.
  • an anisotropic conductive film slit to a width of 1.5 mm on an IZO solid glass using a Teflon (trademark) with a crimping machine tool width of 1.5 mm and a buffer material thickness of 70 ⁇ m, a temperature of 80 ° C., a pressure of 1 MPa, 2
  • Temporarily affixing was performed under the second temporary pressing condition, and the peeled PET film was peeled off.
  • the COF was temporarily fixed with the same pressure bonding machine under the temperature fixed temperature of 80 ° C., the pressure of 0.5 MPa, and the time of 0.5 seconds.
  • pressure bonding was performed at a temperature of 190 ° C., a pressure of 3 MPa, and a pressure of 10 seconds to obtain a mounting body.
  • maintains a mounting body in an 85 degreeC85% RH constant temperature and humidity chamber for 500 hours was performed, Then, the resistance value of the mounting body was measured by the 4-terminal method using the digital multimeter.
  • the connection resistance was evaluated as “A” (best) when the resistance value was less than 2.0 ⁇ , and “C” (defective) when the resistance value was 2.0 ⁇ or more.
  • a mounted body of ITO wiring was produced.
  • IC Serials Corporation evaluation IC, 1.5 mm ⁇ 130 mm, 0.5 mm thickness, gold-plated bump, bump space 10 ⁇ m, bump height 15 ⁇ m
  • glass substrate Dexerials Corporation evaluation
  • a glass substrate, a comb-tooth pattern, a space between bumps of 10 ⁇ m, and a glass thickness of 0.5 mm were connected.
  • an anisotropic conductive film slit to a width of 1.5 mm on a glass substrate using a Teflon (trademark) with a crimping machine tool width of 1.5 mm and a buffer material of 70 ⁇ m, a temperature of 80 ° C., a pressure of 1 MPa, Temporarily affixing was performed under the second temporary pressing condition, and the peeled PET film was peeled off.
  • the IC was temporarily fixed with the same crimping machine under the temporary fixing conditions of a temperature of 80 ° C., a pressure of 0.5 MPa, and a time of 0.5 seconds.
  • pressure bonding was performed at a temperature of 190 ° C., a pressure of 3 MPa, and a pressure of 10 seconds to obtain a mounting body.
  • the resistance value between adjacent bumps of the mounting body was measured by the two-terminal method, and 10 ⁇ 8 ⁇ or less was counted as a short circuit.
  • the evaluation IC 8 electrode patterns composed of 10 sets of bumps were formed, and the number of electrode patterns in which one or more sets of 10 shorts occurred was counted. Insulation evaluation is “A” (best) when the number of shorted electrode patterns is 0, and “B” (normal) when the number of shorted electrode patterns is 2 or less. The case where there were three or more electrode patterns was “C” (defect).
  • conductive particles A were prepared using tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles A was 20 nm, and the film thickness of the nickel plating film as the second conductive film was 100 nm.
  • thermosetting binder conductive particles A are dispersed so as to have a volume ratio of 10%, and this is coated on a peeled PET film treated with silicon so as to have a thickness of 20 ⁇ m. A film was prepared. The minimum melt viscosity of this anisotropic conductive film was 100 Pa ⁇ s. Table 1 shows the evaluation results of connection resistance and insulation.
  • Example 2 Conductive particles B having the same configuration as in Example 1 except that tungsten carbide-titanium carbide-tantalum carbide particles having an average particle diameter of 200 nm (Vickers hardness 2400) were used as the protrusion core material in the production of the conductive particles described above. And an anisotropic conductive film was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • Example 3 In the preparation of the conductive particles described above, conductive particles C having the same configuration as in Example 1 were prepared except that titanium carbide particles having an average particle diameter of 200 nm (Vickers hardness 3500) were used as the protrusion core material. Conductive film was prepared. Table 1 shows the evaluation results of connection resistance and insulation.
  • Example 4 In the preparation of the conductive particles described above, conductive particles D having the same configuration as in Example 1 were prepared except that cermet particles (Vickers hardness 2800) having an average particle diameter of 200 nm were used as the protrusion core material. A conductive film was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • Example 5 In the preparation of the conductive particles described above, conductive particles E having the same configuration as in Example 1 were prepared except that boron carbide particles having an average particle diameter of 200 nm (Vickers hardness 3300) were used as the protrusion core material. Conductive film was prepared. Table 1 shows the evaluation results of connection resistance and insulation.
  • conductive particles F having the same configuration as in Example 1 were prepared except that nickel particles having an average particle diameter of 200 nm (Vickers hardness 500) were used as the protrusion core material, and anisotropy was obtained. A conductive film was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • ⁇ Comparative Example 2> In the preparation of the conductive particles described above, the resin particles are sensitized and activated, filtered and washed, dispersed by stirring with deionized water, and then the tungsten carbide particle slurry is added to the aqueous solution. Tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) were adhered onto the particles as a protruding core material, and the particles were coated with a nickel plating film in the second conductive film coating step to produce conductive particles G. The thickness of the nickel plating film as the second conductive film of the conductive particles G was 120 nm. Then, similarly to Example 1, an anisotropic conductive film was produced using the conductive particles G. Table 1 shows the evaluation results of connection resistance and insulation.
  • conductive particles H were prepared using tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles H was 5 nm, and the film thickness of the nickel plating film as the second conductive film was 100 nm.
  • An anisotropic conductive film was produced in the same manner as in Example 1 except that the conductive particles H were used. Table 1 shows the evaluation results of connection resistance and insulation.
  • conductive particles I were prepared using tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles I was 100 nm, and the film thickness of the nickel plating film as the second conductive film was 100 nm.
  • An anisotropic conductive film was produced in the same manner as in Example 1 except that the conductive particles I were used. Table 1 shows the evaluation results of connection resistance and insulation.
  • conductive particles J were prepared using tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles J was 150 nm, and the film thickness of the nickel plating film as the second conductive film was 350 nm.
  • An anisotropic conductive film was produced in the same manner as in Example 1 except that the conductive particles J were used. Table 1 shows the evaluation results of connection resistance and insulation.
  • the conductive particles K were prepared using tungsten carbide particles (Vickers hardness 1800) having an average particle diameter of 200 nm as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles K was 150 nm, and the film thickness of the nickel plating film as the second conductive film was 500 nm.
  • An anisotropic conductive film was produced in the same manner as in Example 1 except that the conductive particles K were used. Table 1 shows the evaluation results of connection resistance and insulation.
  • conductive particles L were prepared using tungsten carbide particles having an average particle diameter of 200 nm (Vickers hardness 1800) as the protrusion core material.
  • the film thickness of the nickel plating film as the first conductive film of the conductive particles L was 20 nm, and the film thickness of the palladium plating film as the second conductive film was 100 nm.
  • An anisotropic conductive film was produced in the same manner as in Example 1 except that the conductive particles L were used. Table 1 shows the evaluation results of connection resistance and insulation.
  • thermosetting binder was prepared in the same manner as in Example 1, and the conductive particles A were dispersed therein so that the volume ratio was 10%, and the resin was prepared under the solid content concentration and drying conditions of the resin.
  • the minimum melt viscosity was 1,000,000 Pa ⁇
  • the anisotropic conductive film which is s was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • thermosetting binder was prepared in the same manner as in Example 1, and the conductive particles A were dispersed therein so that the volume ratio was 10%, and the resin was prepared under the resin solid content concentration and drying conditions.
  • the minimum melt viscosity was 100,000 Pa ⁇
  • the anisotropic conductive film which is s was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • thermosetting binder was prepared in the same manner as in Example 1, and conductive particles A were dispersed therein so that the volume ratio was 10%, and the resin was prepared under the resin solid content concentration and drying conditions.
  • the minimum melt viscosity was 1 Pa ⁇
  • the anisotropic conductive film which is s was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • thermosetting binder was prepared in the same manner as in Example 1, and conductive particles A were dispersed therein so as to have a volume ratio of 10%, and were prepared according to the solid content concentration and drying conditions of the resin.
  • An anisotropic conductive film of 1 Pa ⁇ s was produced. Table 1 shows the evaluation results of connection resistance and insulation.
  • the first conductive layer and the second conductive layer contains conductive particles in which a plurality of protruding core materials having high Vickers hardness are arranged on a nickel plating film that covers resin particles as in Examples 1 to 12, and a binder with an optimized minimum melt viscosity.
  • the resistance value could be reduced by using the connecting material.
  • the total film thickness of the first conductive layer and the second conductive layer is 100 nm or more and 500 nm or less and the film thickness of the first conductive layer is 5 nm or more, excellent insulating properties are obtained. It turns out that it is obtained.

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

L'invention concerne un matériau de connexion capable d'obtenir une faible résistance de connexion. Le matériau de connexion contient des particules conductrices qui comprennent : des particules de résine ; un premier film conducteur qui recouvre les particules de résine ; de multiples matériaux de noyau en saillie qui sont disposés sur le premier film conducteur et qui ont une dureté Vickers de 1 500 à 5 000 ; et un second film conducteur qui recouvre le premier film conducteur et les matériaux de noyau en saillie. La viscosité minimale à l'état fondu du matériau de connexion est de 1 à 100 000 Pa·s. En raison de cette configuration, une faible résistance de connexion peut être obtenue du fait qu'un liant est entièrement retiré d'entre les particules conductrices et une électrode, et une quantité suffisante de la pression appliquée à l'électrode peut être obtenue.
PCT/JP2016/077197 2015-09-18 2016-09-14 Matériau de connexion WO2017047671A1 (fr)

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KR1020237001742A KR102707315B1 (ko) 2015-09-18 2016-09-14 접속 재료
CN201680050992.6A CN107925175A (zh) 2015-09-18 2016-09-14 连接材料
KR1020207018568A KR20200080337A (ko) 2015-09-18 2016-09-14 접속 재료
HK18110689.5A HK1251356A1 (zh) 2015-09-18 2018-08-21 連接材料

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CN114068067A (zh) * 2017-09-20 2022-02-18 积水化学工业株式会社 含金属粒子、连接材料、连接结构体及其制造方法、导通检查用部件以及导通检查装置

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WO2010010768A1 (fr) * 2008-07-24 2010-01-28 ソニーケミカル＆インフォメーションデバイス株式会社 Particule conductrice, film conducteur anisotrope, corps joint, et procédé de connexion
JP2011175846A (ja) * 2010-02-24 2011-09-08 Hitachi Chem Co Ltd 回路部材接続用接着フィルム、回路部材接続構造体及び回路部材接続構造体の製造方法
WO2012098929A1 (fr) * 2011-01-19 2012-07-26 ソニーケミカル＆インフォメーションデバイス株式会社 Film conducteur anisotrope
JP2015057757A (ja) * 2013-08-09 2015-03-26 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体

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JP5529901B2 (ja) 2012-01-10 2014-06-25 積水化学工業株式会社 導電性粒子及び異方性導電材料
WO2014054572A1 (fr) 2012-10-02 2014-04-10 積水化学工業株式会社 Particule conductrice, matériau conducteur et structure de connexion

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WO2010010768A1 (fr) * 2008-07-24 2010-01-28 ソニーケミカル＆インフォメーションデバイス株式会社 Particule conductrice, film conducteur anisotrope, corps joint, et procédé de connexion
JP2011175846A (ja) * 2010-02-24 2011-09-08 Hitachi Chem Co Ltd 回路部材接続用接着フィルム、回路部材接続構造体及び回路部材接続構造体の製造方法
WO2012098929A1 (fr) * 2011-01-19 2012-07-26 ソニーケミカル＆インフォメーションデバイス株式会社 Film conducteur anisotrope
JP2015057757A (ja) * 2013-08-09 2015-03-26 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068067A (zh) * 2017-09-20 2022-02-18 积水化学工业株式会社 含金属粒子、连接材料、连接结构体及其制造方法、导通检查用部件以及导通检查装置

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KR20200080337A (ko) 2020-07-06
JP2017059471A (ja) 2017-03-23
CN113410671A (zh) 2021-09-17
CN107925175A (zh) 2018-04-17
KR20180036770A (ko) 2018-04-09
HK1251356A1 (zh) 2019-01-25

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