WO2017043256A1 - Composition et procédé de fabrication de corps lié - Google Patents

Composition et procédé de fabrication de corps lié Download PDF

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Publication number
WO2017043256A1
WO2017043256A1 PCT/JP2016/073821 JP2016073821W WO2017043256A1 WO 2017043256 A1 WO2017043256 A1 WO 2017043256A1 JP 2016073821 W JP2016073821 W JP 2016073821W WO 2017043256 A1 WO2017043256 A1 WO 2017043256A1
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Prior art keywords
silver powder
stress relaxation
composition
silver
relaxation body
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PCT/JP2016/073821
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English (en)
Japanese (ja)
Inventor
弘太郎 増山
山崎 和彦
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三菱マテリアル株式会社
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Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to CN201680051556.0A priority Critical patent/CN108025987A/zh
Priority to KR1020187003349A priority patent/KR20180051488A/ko
Priority to US15/757,740 priority patent/US20190047046A1/en
Priority to EP16844119.4A priority patent/EP3348537A4/fr
Publication of WO2017043256A1 publication Critical patent/WO2017043256A1/fr

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    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/834Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83439Silver [Ag] as principal constituent
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/834Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444Gold [Au] as principal constituent
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399Material
    • H01L2224/834Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447Copper [Cu] as principal constituent
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
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    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
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    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1027IV
    • H01L2924/10272Silicon Carbide [SiC]

Definitions

  • the present invention relates to a composition and a method for producing a joined body.
  • a joining material When joining two or more parts in assembly or mounting of electronic parts, a joining material is generally used.
  • a bonding material a paste-like bonding material in which metal particles such as silver powder are dispersed in a solvent is known.
  • the joining material can be applied to the surface of one of the parts, the other part is brought into contact with the coated surface, and heating can be performed in this state.
  • Patent Document 1 discloses a submicron-sized metal particle having an average primary particle size of 0.5 to 3.0 ⁇ m, an average primary particle as a bonding material that ensures shear strength and reduces unevenness in shear strength.
  • a bonding material including nano-sized metal particles having a diameter of 1 to 200 nm and a dispersion medium is disclosed.
  • the bonding material disclosed in Patent Document 1 has a problem that the bonding layer formed by using the bonding material deteriorates due to stress generated inside the bonding layer due to a change in temperature, and durability and reliability decrease. there were.
  • This invention is made
  • the particle size distribution of the primary particles has a first peak in the range of 20 to 70 nm and a second peak in the range of 200 to 500 nm, At 150 ° C., organic matter decomposes by 50% by mass or more, Silver powder that generates gaseous carbon dioxide, acetone evaporate and water evaporate when heated at 100 ° C .; A stress relaxation body having a Young's modulus lower than that of the silver powder sintered body; A solvent, and A composition having a mass ratio of the silver powder to the stress relieving body of 99: 1 to 60:40.
  • composition according to (1) wherein the stress relaxation body has a Young's modulus of 3 GPa or less.
  • composition according to (1) or (2), wherein the shape of the stress relaxation body is spherical.
  • a method for producing a joined body in which the first member and the second member are joined via a joining layer The manufacturing method of the joined body which forms the said joining layer using the composition in any one of said (1) to (4).
  • the composition which is one embodiment of the present invention has a primary particle size distribution in which the first peak is in the range of 20 to 70 nm and the particle size is 200 to 500 nm.
  • the organic substance is decomposed by 50 mass% or more at 150 ° C., and when heated at 100 ° C., gaseous carbon dioxide, acetone evaporate and water evaporate are generated. Since it contains silver powder, a stress relaxation body having a Young's modulus lower than that of the silver powder sintered body, and a solvent, and the mass ratio of the silver powder to the stress relaxation body is 99: 1 to 60:40, the thermal cycle resistance It is possible to form an excellent bonding layer.
  • the manufacturing method of the joined body which is another aspect of the invention of the present application (hereinafter referred to as the “manufacturing method of the joined body of the present invention”) uses the above-described composition, a joined body having excellent thermal cycle resistance is used. Can be manufactured.
  • composition of the present embodiment is roughly composed of silver powder, a stress relaxation body having a Young's modulus lower than that of the silver powder sintered body, and a solvent.
  • the silver powder is composed of pure silver and a silver alloy containing silver as a main component (silver content is 99% by mass or more).
  • the composition of this embodiment can form a bonding layer by heat treatment, and bond two or more adjacent objects to be bonded.
  • spherical shape, rod shape, scale shape etc. are mentioned, for example.
  • imageJ developed by the National Institutes of Health, USA. Then, the area of each particle was calculated from the number of pixels, and the primary particle size of each particle was determined by converting this area into a perfect circle. The top two values with the largest number of particle diameters were calculated. Among these, the smaller one was defined as the first peak particle diameter, and the larger one was defined as the second peak particle diameter.
  • Silver powder has a particle size distribution within a predetermined range.
  • the particle size distribution of the primary particles of the silver powder has, for example, a first peak in the range of 20 to 70 nm, preferably 30 to 50 nm, and a particle size of 200 to 500 nm, preferably 300 to 400 nm.
  • the second peak is within the range.
  • the first peak is 20 nm or more, a bonding layer having a thickness sufficient to maintain the bonding can be formed during the heat treatment.
  • the first peak is 70 nm or less, the silver filling degree in the bonding layer can be increased.
  • the second peak when the second peak is 200 nm or more, a bonding layer having a thickness sufficient to maintain the bonding can be formed during the heat treatment.
  • the second peak is 500 nm or less, the filling degree of silver in the bonding layer can be increased.
  • the filling degree of the silver powder inside the composition can be increased after the composition is applied to the surface of the object to be bonded. Therefore, when heat-treated, silver powder can be uniformly and sufficiently sintered inside the bonding layer. As a result, the degree of silver filling in the formed bonding layer is increased, and the thermal cycle resistance is improved.
  • the particle size distribution is measured by, for example, observing silver powder with a commercially available scanning electron microscope (SEM, such as “S-4300SE” manufactured by Hitachi High-Technologies Corporation), and measuring the particle size of 1000 or more silver particles. Can be done.
  • SEM scanning electron microscope
  • the top two values having the largest number of particle diameters are calculated, and the smaller one is defined as the first peak particle diameter, and the larger one is defined as the second peak particle diameter.
  • Silver powder is coated with organic matter.
  • organic substance covering silver powder for example, those that decompose at 50% by mass or more at 150 ° C. are preferable, and those that decompose at 75% by mass at 150 ° C. are more preferable.
  • the decomposition rate of organic matter covering silver powder is defined as the decomposition rate of organic matter after silver powder is treated at 150 ° C. for 30 minutes.
  • the organic substance covering the silver powder is decomposed by 50% by mass or more at 150 ° C., the silver powder is easily sintered and the thermal cycle resistance of the bonding layer is improved.
  • covers silver powder can be performed by, for example, measuring the mass reduction
  • Silver powder generates gas when heated. Specifically, for example, when powdered silver powder is heated at 100 ° C., gaseous carbon dioxide, acetone evaporate, water evaporate, and the like are generated.
  • the gas is derived from organic molecules adsorbed on the surface of the silver powder, and the lower the molecular weight, the easier it is to separate and separate from the surface of the silver powder by heating. Therefore, the silver powder that generates the gas is easily sintered and the thermal cycle resistance of the bonding layer is improved.
  • the gas generated when the silver powder is heated is identified by, for example, a commercially available pyrolysis gas chromatograph mass spectrometer (pyrolysis GC / MS, GC / MS in which a pyrolysis apparatus is installed in a portion where silver powder is introduced, for example, (PY-3030 manufactured by Frontier Laboratories, "JMS-T100GCV” manufactured by JEOL Ltd.) and the like).
  • a commercially available pyrolysis gas chromatograph mass spectrometer pyrolysis GC / MS, GC / MS in which a pyrolysis apparatus is installed in a portion where silver powder is introduced, for example, (PY-3030 manufactured by Frontier Laboratories, "JMS-T100GCV” manufactured by JEOL Ltd.) and the like).
  • the Young's modulus of the silver powder sintered body cannot be generally described because the degree of sintering inside the film varies depending on the synthesis conditions of the silver powder to be used and the heating conditions of the composition.
  • the silver powder sintered body when subjected to partial heating has a Young's modulus greater than 15 GPa and 25 GPa or less.
  • the stress relaxation body has a lower Young's modulus than the above-mentioned silver powder sintered body.
  • the Young's modulus of the stress relaxation body is preferably 3 GPa or less, for example.
  • the reason why a good stress relaxation effect can be obtained at 3 GPa or less is that the Young's modulus of the stress relaxation body is a sufficiently low value of 3 GPa or less when stress is generated by thermal expansion / contraction of the above-mentioned silver powder sintered body. Therefore, it is assumed that the stress relaxation body itself can be deformed flexibly and the destruction of the bonding layer is suppressed.
  • the bonding layer formed using the composition sufficiently obtains the stress relaxation effect due to the deformation of the stress relaxation body. Can do. Therefore, the thermal cycle resistance of the bonding layer is improved.
  • the Young's modulus of the silver powder sintered body and the stress relaxation body can be measured using, for example, a micro compression tester (for example, “MCT-2000” manufactured by Shimadzu Corporation).
  • the stress relaxation body has a thermal expansion coefficient within a predetermined range.
  • the thermal expansion coefficient of the stress relaxation body is preferably, for example, 7 ⁇ 10 ⁇ 5 / K or less.
  • the thermal expansion coefficient of the stress relaxation body is 7 ⁇ 10 ⁇ 5 / K or less, the structure inside the bonding layer can be prevented from being destroyed when the bonding layer formed from the composition is heated. . Therefore, the thermal cycle resistance of the bonding layer is improved.
  • the measurement of the thermal expansion coefficient of the stress relaxation body is not particularly limited, but can be performed in accordance with, for example, JIS K7197.
  • the shape of the stress relaxation body is not particularly limited, and specific examples include a spherical shape, a plate shape, a rod shape, and a fiber shape.
  • the material of the stress relaxation body is not particularly limited, and specific examples include acrylic resin, silicone resin, heat resistant rubber, cellulose and the like.
  • a stress relaxation body mainly organic substance having high heat resistance as a material of the stress relaxation body, deterioration of the bonding layer can be suppressed.
  • composition of the present embodiment may include one or more stress relaxation bodies having the shape and material described above.
  • the solvent is not particularly limited, and specific examples include alcohol solvents, glycol solvents, acetate solvents, hydrocarbon solvents, amine solvents, and the like.
  • the alcohol solvent is not particularly limited, and specific examples include ⁇ -terpineol and isopropyl alcohol.
  • the glycol solvent is not particularly limited, and specific examples include ethylene glycol, diethylene glycol, polyethylene glycol and the like.
  • acetate solvent is not particularly limited, and specific examples include butyl tol carbitate acetate and the like.
  • the hydrocarbon solvent is not particularly limited, and specific examples include decane, dodecane, and tetradecane.
  • the amine solvent is not particularly limited, and specific examples include hexylamine, octylamine, dodecylamine and the like.
  • the above solvents may be used alone, or two or more kinds may be mixed and used.
  • composition of the present embodiment is in the form of a paste because it is formed by mixing the above-described silver powder, stress relieving body, and solvent. Therefore, it can apply
  • the mass ratio of the silver powder and the stress relaxation body contained in the composition is preferably such that the mass ratio (silver powder: stress relaxation body) is 99: 1 to 60:40, for example, 95: More preferably, it is 5 to 70:30.
  • the proportion of silver powder contained in the composition exceeds the upper limit, the effect of improving durability cannot be obtained sufficiently. Moreover, when the ratio of silver powder is less than the lower limit, it is not possible to sufficiently obtain the effect of improving the bonding strength due to the sintering of silver powder.
  • the manufacturing method of the composition mentioned above is demonstrated with reference to FIG. First, as shown in FIG. 1, the silver salt aqueous solution 1 and the carboxylate aqueous solution 2 are simultaneously dropped into the water 3 to prepare the silver carboxylate slurry 4.
  • the silver carboxylate slurry 4 when the silver carboxylate slurry 4 is prepared, it is preferable to maintain the temperature of each of the liquids 1 to 4 at a predetermined temperature within the range of 20 to 90 ° C.
  • a predetermined temperature By maintaining the temperature of each of the liquids 1 to 4 at a predetermined temperature of 20 ° C. or higher, silver carboxylate is easily generated, and the particle size of the silver powder can be increased. Further, by keeping the temperature of each of the liquids 1 to 4 at a predetermined temperature of 90 ° C. or less, it is possible to prevent the silver powder from becoming coarse particles.
  • the water 3 is stirred while the silver salt aqueous solution 1 and the carboxylate aqueous solution 2 are simultaneously dropped into the water 3.
  • the silver salt in the silver salt aqueous solution 1 is preferably, for example, one or more compounds selected from the group consisting of silver nitrate, silver chlorate, silver phosphate, and salts thereof.
  • the carboxylic acid in the carboxylate aqueous solution 2 is one or two selected from the group consisting of glycolic acid, citric acid, malic acid, maleic acid, malonic acid, fumaric acid, succinic acid, tartaric acid, and salts thereof. More than one compound is preferred.
  • Examples of the water 3 include ion exchange water and distilled water. It is particularly preferable to use ion-exchanged water because it does not contain ions that may adversely affect the synthesis and the production cost is lower than that of distilled water.
  • a reducing agent aqueous solution 5 is dropped into the silver carboxylate slurry 4 and then a predetermined heat treatment is performed to prepare a silver powder slurry.
  • the temperature is raised to a predetermined temperature (maximum temperature) within a range of 20 to 90 ° C. at a rate of temperature increase of 15 ° C./hour or less.
  • Heat treatment may be performed in which the temperature is lowered to 30 ° C. or less over a period of 30 minutes or less after being held at the temperature for 1 to 5 hours.
  • the predetermined heat treatment it is possible to prevent the silver powder from becoming coarse particles by setting the heating rate to 15 ° C./hour or less.
  • the predetermined heat treatment by setting the maximum temperature to 20 ° C. or higher, silver carboxylate can be easily reduced, and the particle size of silver powder can be increased. Moreover, it can prevent that silver powder turns into a coarse particle by making a maximum temperature into 90 degrees C or less.
  • the silver carboxylate in the predetermined heat treatment, by setting the holding time at the maximum temperature to 1 hour or more, the silver carboxylate can be easily reduced, and the particle size of the silver powder can be increased. Moreover, it can prevent that silver powder turns into a coarse particle by making holding time into 5 hours or less.
  • the time during which the temperature is lowered to 30 ° C. is set to 30 minutes or less, whereby the silver powder can be prevented from becoming coarse particles.
  • the temperatures of the liquids 4 and 5 are kept at a predetermined temperature within the range of 20 to 90 ° C.
  • the silver carboxylate can be easily reduced, and the particle size of the silver powder can be increased.
  • it can prevent that silver powder turns into a coarse particle by hold
  • the reducing agent in the reducing agent aqueous solution 5 is preferably one or more compounds selected from the group consisting of hydrazine, ascorbic acid, oxalic acid, formic acid, and salts thereof.
  • the silver powder slurry is dried to obtain silver powder.
  • the liquid layer in the silver powder slurry is removed from the silver powder slurry by a centrifugal separator, and the silver powder slurry is dehydrated and desalted.
  • the method for drying the silver powder slurry is not particularly limited, and specific examples include a freeze drying method, a reduced pressure drying method, and a heat drying method.
  • the freeze-drying method is a method in which a silver powder slurry is put in a sealed container and frozen, the inside of the sealed container is depressurized with a vacuum pump to lower the boiling point of the material to be dried, and the moisture of the material to be dried is sublimated at a low temperature and dried. is there.
  • the reduced-pressure drying method is a method of drying an object to be dried by reducing the pressure.
  • the heat drying method is a method of drying an object to be dried by heating.
  • the mass ratio of the silver powder and the stress relaxation body contained in the composition is preferably, for example, a mass ratio (silver powder: stress relaxation body) of 99: 1 to 60:40, 95: 5 More preferably, it is set to ⁇ 70: 30.
  • FIG. 3 shows the joined body 11 of the present embodiment.
  • the joined body 11 of the present embodiment includes a substrate 12, a first metal layer 13, a joining layer 14, a second metal layer 15, and an article to be joined 16. It is roughly structured.
  • the bonded body 11 in which the substrate 12 (first member) and the workpiece 16 (second member) are bonded using the above-described composition will be described.
  • the composition is used. There are no particular restrictions on what is joined.
  • substrate 12 Specifically, the insulating board etc. which the aluminum plate and the aluminum plate were joined are mentioned, for example.
  • the first metal layer 13 is laminated adjacent to the substrate 12.
  • the substrate 12 and the bonding layer 14 are bonded via the first metal layer 13.
  • the material of the first metal layer 13 for example, one or more metals selected from the group consisting of gold, silver, copper, and the like can be used.
  • the bonding layer 14 is laminated adjacently between the first metal layer 13 and the second metal layer 15.
  • the bonding layer 14 is in contact with the first metal layer 13 to form an interface 17.
  • the bonding layer 14 is in contact with the second metal layer 15 to form an interface 18.
  • the bonding layer 14 is formed by applying the above-described composition onto the first metal layer 13, placing the object to be bonded 16 so that the applied surface and the second metal layer 15 face each other, and performing heat treatment. Is.
  • stress relaxation bodies having a Young's modulus lower than that of silver are dispersed, and in the cross-sectional observation of the bonding layer 14, the area ratio of the stress relaxation bodies is within a range of 5% to 90%. Yes.
  • the thickness of the bonding layer 14 is not particularly limited as long as the substrate 12 and the workpiece 16 can be bonded to each other. Specifically, for example, it may be 1 to 100 ⁇ m.
  • the second metal layer 15 is a bonding layer 14 and is laminated adjacent to the opposite side of the first metal layer 13.
  • the bonding layer 14 and the workpiece 16 are bonded via the second metal layer 15.
  • the material of the second metal layer 15 the same material as that used for the first metal layer 13 can be used.
  • the object to be bonded 16 is the second metal layer 15 and is laminated adjacent to the opposite side of the bonding layer 14.
  • the to-be-joined object 16 Specifically, silicon (Si), silicon carbide (SiC) etc. are mentioned, for example.
  • the joined body 11 of the present embodiment uses the above-described composition, a material that is weak against heat can also be used as the article to be joined 16.
  • the substrate 12 and the object to be bonded 16 are bonded by the bonding layer 14. Since the bonding layer 14 is formed using the composition described above, the bonding layer 14 is excellent in the thermal cycle resistance.
  • the initial bonding area is an area to be bonded before bonding, that is, an area of a bonded object (silicon chip or the like).
  • peeling is indicated by a white portion in the joint, and the area of the white portion is defined as a peeling area.
  • the area of the white part can be obtained by binarizing with the image processing software “ImageJ (Developed by National Institutes of Health, USA)” and converting the number of pixels of the white part into an area.
  • the first metal layer 13 is laminated on the surface of the substrate 12 by laminating a metal by a known method.
  • the second metal layer 15 is laminated on the surface of the article 16 to be bonded.
  • the method for laminating the metal on the surface of the substrate 12 and the object to be bonded 16 is not particularly limited, and specific examples include a vacuum deposition method, a sputtering method, a plating method, and a printing method.
  • the composition of the embodiment described above is applied to the surface of the first metal layer 13 by a known method.
  • the method for applying the composition to the surface of the first metal layer 13 is not particularly limited, and specific examples include a spin coating method, a metal mask method, and a screen printing method.
  • the object to be bonded 16 is placed on the composition applied to the surface of the first metal layer 13 so that the second metal layer 15 side faces. Thereafter, the bonding layer 14 is formed from the composition by heat treatment, and the bonding layer 14 is bonded to the first metal layer 13 and the second metal layer 15.
  • the heating temperature in the heat treatment is not particularly limited, but specifically, for example, 150 ° C. or higher is preferable. When the heating temperature is 150 ° C. or higher, the shear strength of the bonding layer 14 can be increased.
  • heating time in the case of heat processing, Specifically, 30 minutes or more are preferable, for example.
  • the heating time is 30 minutes or more, the shear strength of the bonding layer 14 can be increased.
  • the joined body 11 is manufactured by the above process.
  • the primary particle size distribution is such that the first peak in the range of 20 to 70 nm and the second peak in the range of 200 to 500 nm.
  • Silver powder that decomposes 50% by mass or more of organic matter at 150 ° C. and is heated at 100 ° C. to generate gaseous carbon dioxide, acetone evaporate and water evaporate, and the silver powder sintered body
  • the mass ratio of the silver powder and the stress relieving body is 99: 1 to 60:40. Therefore, it is possible to form a bonding layer that is excellent in heat cycle resistance.
  • the Young's modulus of the stress relaxation body is 3 GPa or less and the thermal expansion coefficient is 7 ⁇ 10 ⁇ 5 / K or less, it is possible to reliably form a bonding layer having excellent thermal cycle resistance. can do.
  • the stress relaxation bodies having a Young's modulus lower than that of silver are dispersed, and in the cross-sectional observation of the bonding layer 14, the area ratio of the stress relaxation bodies is 5% or more and 90% or less. Therefore, it is excellent in the resistance to thermal cycle.
  • the embodiment of the present invention has been described in detail with reference to the drawings.
  • the specific configuration is not limited to this embodiment, and includes design and the like within the scope not departing from the gist of the present invention.
  • the example including the first metal layer 13 and the second metal layer 15 has been described.
  • the present invention is not limited to this.
  • one or both of the first metal layer 13 and the second metal layer 15 may be omitted.
  • a predetermined heat treatment was performed on the mixed slurry. Specifically, the mixed slurry was heated to a maximum temperature of 70 ° C. at a temperature increase rate of 10 ° C./hour, held at 70 ° C. (maximum temperature) for 2 hours, and then the temperature was decreased to 30 ° C. over 60 minutes. . As a result, a silver powder slurry was obtained. The silver powder slurry was put in a centrifuge and rotated at a rotation speed of 1000 rpm for 10 minutes. As a result, the liquid layer in the silver powder slurry was removed, and a dehydrated and desalted silver powder slurry was obtained.
  • This dehydrated and desalted silver powder slurry was dried by freeze-drying for 30 hours to obtain Class I silver powder.
  • Classification IV Classification except that the mixed slurry was adjusted while maintaining the temperature of each liquid at 15 ° C., and that the heating rate during heat treatment was 0 ° C./hour, the maximum temperature was 15 ° C., and the holding time was 5 hours. A silver powder of classification IV was obtained in the same manner as I.
  • Classification VI Commercially available silver powder (Mitsui Kinzoku Kogyo Co., Ltd., “SPQ03S”) was prepared as a classification VI silver powder.
  • the primary particle size distribution of the silver powder was measured by observing the silver powder with an SEM (“S-4300SE” manufactured by Hitachi High-Technologies Corporation) and measuring the particle size of 1000 silver particles.
  • SEM S-4300SE
  • the top two values having the largest number of particle diameters were calculated, and the smaller one was defined as the first peak particle diameter, and the larger one was defined as the second peak particle diameter.
  • the decomposition rate of the organic matter was obtained by measuring the amount of mass reduction after heating with respect to before heating after holding silver powder at 150 ° C. for 30 minutes in the air.
  • the heat generation gas species was identified by analyzing the gas generated using pyrolysis GC / MS ("PY-3030” manufactured by Frontier Laboratories, "JMS-T100GCV” manufactured by JEOL Ltd.).
  • Table 1 The results of each measurement are shown in Table 1.
  • Table 1 the time during which the aqueous silver nitrate solution and the aqueous ammonium citrate solution are simultaneously added dropwise, the temperature rising rate and the maximum temperature of the silver powder slurry obtained by adding the aqueous ammonium formate solution to the silver citrate slurry, The type of the reducing agent aqueous solution is also described.
  • CO 2 out of the heat generating gas species in Table 1 is the gaseous carbon dioxide, acetone, water, ethanediol, acetate, pyrrole is these vapors.
  • Example 1 As a stress relaxation body, a stress relaxation body of class A (material: acrylic resin, shape: spherical, average particle size: 10 ⁇ m, Young's modulus: 3 GPa, thermal expansion coefficient: 7 ⁇ 10 ⁇ 5 / K) was prepared.
  • a class I silver powder, a class A stress relaxation body, and ethylene glycol as a solvent are placed in a container so that the mass ratio (silver powder: stress relaxation body: solvent) is 80: 5: 15, and a kneader (THINKY
  • the composition was obtained by performing kneading three times with a rotational speed of 2000 rpm for 3 minutes using “Awatori Netaro” manufactured by the company.
  • mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 2 A composition was obtained in the same manner as in Example 1 except that the silver powder of category II was used. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 3 A composition was obtained in the same manner as in Example 1 except that the silver powder of category III was used. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 4 A composition was obtained in the same manner as in Example 1 except that the mass ratio (silver powder: stress relaxation body: solvent) was 84: 1: 15. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 99: 1.
  • Example 5 A composition was obtained in the same manner as in Example 1 except that the mass ratio (silver powder: stress relaxation body: solvent) was 50:35:15. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 60:40.
  • Example 6 As a stress relaxation body, a stress relaxation body of class B (material: silicone resin, shape: spherical, average particle size: 5 ⁇ m, Young's modulus: 0.04 GPa, thermal expansion coefficient: 8 ⁇ 10 ⁇ 5 / K) was used. A composition was obtained in the same manner as in Example 1 except that. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 7 Except for using a stress relaxation body of class E (material: polyimide, shape: spherical, average particle size: 5 ⁇ m, Young's modulus: 4 GPa, thermal expansion coefficient: 2 ⁇ 10 ⁇ 5 / K) as the stress relaxation body.
  • a composition was obtained in the same manner as in Example 1.
  • mass ratio silver powder: stress relaxation body
  • a stress relaxation body is 94: 6.
  • composition was obtained in the same manner as in Example 1 except that the stress relieving body was not used and the mass ratio (silver powder: stress relieving body: solvent) was 85: 0: 15.
  • composition was obtained in the same manner as in Example 1 except that the classification IV silver powder was used.
  • mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 3 A composition was obtained in the same manner as in Example 1 except that the classification V silver powder was used. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 4 A composition was obtained in the same manner as in Example 1 except that classification VI silver powder was used. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • Example 5 A composition was obtained in the same manner as in Example 1 except that the mass ratio (silver powder: stress relieving body: solvent) was 84.5: 0.5: 15. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 99.4: 0.6.
  • Example 6 A composition was obtained in the same manner as in Example 1 except that the mass ratio (silver powder: stress relaxation body: solvent) was 45:40:15. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 53:47.
  • Example 7 (Comparative Example 7) Implemented except that a class C stress relieving body (material: copper, shape: spherical, average particle size: 5 ⁇ m, Young's modulus: 128 GPa, thermal expansion coefficient: 2 ⁇ 10 ⁇ 6 / K) was used as the stress relieving body A composition was obtained in the same manner as in Example 1. In addition, mass ratio (silver powder: stress relaxation body) of silver powder and a stress relaxation body is 94: 6.
  • a stress relaxation body of class D material: polyethylene resin, shape: spherical, average particle size: 5 ⁇ m, Young's modulus: 0.2 GPa, thermal expansion coefficient: 20 ⁇ 10 ⁇ 5 / K
  • mass ratio silver powder: stress relaxation body
  • a stress relaxation body is 94: 6.
  • Table 2 below shows the Young's modulus, thermal expansion coefficient, shape, and material of the stress relieving body used in each example and each comparative example.
  • the joined body was produced using the composition of each Example and each comparative example mentioned above.
  • a silver plate was prepared as each substrate, and the composition of Example 1 was printed on the silver plate using a metal mask (hole size: 3 mm long ⁇ 3 mm wide ⁇ 50 ⁇ m thick). Molded.
  • a silicon chip (size: length 2.5 mm ⁇ width 2.5 mm ⁇ thickness 200 ⁇ m) coated with silver is placed on the composition and held at a temperature of 150 ° C. for 30 minutes in an air atmosphere. Then, firing was performed. As a result, a bonding layer was formed between the silver plate and the silicon chip to obtain a bonded body.
  • the initial bonding area is an area to be bonded before bonding, that is, an area of a bonded object (silicon chip or the like).
  • peeling is indicated by a white portion in the joint, and the area of the white portion is defined as a peeling area.
  • the area of the white part was obtained by binarizing with image processing software “ImageJ (Developed by National Institutes of Health)” and converting the number of pixels of the white part into an area.
  • Table 3 shows the composition of the composition used for production and the evaluation results of the thermal cycle resistance for each joined body.
  • A when the thermal cycle resistance is 95% or more
  • B when 85% or more and less than 95%
  • C when 70% or more and less than 85%.
  • D The case of less than 70% was determined as “D”.
  • the joined body of Comparative Example 2 using a composition containing a silver powder of classification IV was inferior in thermal cycle resistance. This is because the primary peak value of the primary particles is less than 20 nm, the second peak value is less than 200 nm, the decomposition rate of organic matter when heated at 150 ° C. is less than 50%, and when heated at 100 ° C. In addition to the low degree of filling of the bonding layer due to the use of silver powder in which ethanediol is detected, the bonding layer has a brittle structure against the stress caused by the thermal cycle due to the low sinterability of the silver powder. is there.
  • the joined body of Comparative Example 3 using a composition containing a silver powder of classification V was inferior in thermal cycle resistance. This is because a silver powder having a primary particle having a first peak value larger than 70 nm and a second peak value larger than 500 nm is used, and in addition to the low filling degree of the bonding layer, the silver powder has low sinterability. This is because the bonding layer has a fragile structure against the stress caused by the thermal cycle.
  • the joined body of Comparative Example 4 using a composition containing a silver powder of classification VI was inferior in thermal cycle resistance. This is because the primary particles do not have two peaks, the decomposition rate of the organic matter when heated at 150 ° C. is less than 50%, and silver powder that detects pyrrole when heated at 100 ° C. is used. This is because, in addition to the low degree of filling, the joining layer has a brittle structure with respect to the stress caused by the thermal cycle because of the low sinterability of silver powder.
  • the joined body of Comparative Example 5 using the composition in which the mass ratio of silver powder to the stress relaxation body (silver powder: stress relaxation body) is 99.4: 0.6 the joined body of Comparative Example 5 has an action of relaxing the stress generated by the cooling / heating cycle. Since it was weak, the heat cycle resistance was poor.
  • the particle size distribution of the primary particles has a first peak in the range of 20 to 70 nm and a second peak in the range of 200 to 500 nm, and 50 masses of organic matter at 150 ° C. %
  • Silver powder containing a carbon dioxide, acetone vaporized substance and water evaporated when heated at 100 ° C., a stress relieving body having a Young's modulus of 3 GPa or less, and a solvent.
  • the joining layer was excellent in the thermal cycle resistance.
  • Example 7 using a stress relaxation body having a Young's modulus of 4 GPa although the thermal cycle resistance was slightly inferior to Examples 1 to 6, the thermal cycle resistance was superior to that of the comparative example.
  • composition of the present invention may be used, for example, as a bonding material when bonding an electronic component or the like on a substrate.

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Abstract

La présente invention concerne une composition qui comprend : de l'argent pulvérulent dans lequel la granulométrie de particules primaires présente un premier pic dans une plage de tailles de particules de 20 à 70 nm et un deuxième pic dans une plage de tailles de particule de 200 à 500 nm, dans laquelle 50 % en masse ou plus de matière organique se décompose au 150 °C et qui, lorsqu'elle est chauffée à 100 °C, génère du dioxyde de carbone gazeux, de la vapeur d'acétone et de la vapeur d'eau ; un corps de relaxation de contrainte ayant un module d'élasticité de Young plus faible que le module d'élasticité de Young d'un corps fritté d'argent pulvérulent ; et un solvant. Cette composition a un rapport de masse de l'argent pulvérulent au corps de relaxation de contrainte de 99:1 à 60:40.
PCT/JP2016/073821 2015-09-09 2016-08-15 Composition et procédé de fabrication de corps lié WO2017043256A1 (fr)

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US15/757,740 US20190047046A1 (en) 2015-09-09 2016-08-15 Composition and method of producing bonded body
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018181083A1 (fr) * 2017-03-28 2018-10-04 Dowaエレクトロニクス株式会社 Matériau de liaison et corps lié au moyen de celui-ci
JP2018168226A (ja) * 2017-03-29 2018-11-01 三菱マテリアル株式会社 ペースト状銀粉組成物、接合体の製造方法および銀膜の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6870436B2 (ja) * 2017-03-31 2021-05-12 三菱マテリアル株式会社 金属粒子凝集体とその製造方法、ペースト状金属粒子組成物および接合体の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184578A (ja) * 1989-01-10 1990-07-19 Hitachi Chem Co Ltd 金属板とセラミックスターゲットとの接合体およびセラミックス薄膜の形成法
JP2008161907A (ja) * 2006-12-28 2008-07-17 Hitachi Ltd 低温接合用材料及び接合方法
JP2011094223A (ja) * 2008-11-26 2011-05-12 Mitsuboshi Belting Ltd 無機素材用接合剤及び無機素材の接合体
JP2012161818A (ja) * 2011-02-08 2012-08-30 Mitsubishi Materials Corp 液相拡散接合用Agペースト、および、この液相拡散接合用Agペーストを用いたパワーモジュール用基板の製造方法
WO2016129368A1 (fr) * 2015-02-13 2016-08-18 三菱マテリアル株式会社 Poudre d'argent, composition de pâte et procédé de production de poudre d'argent

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1578559B1 (fr) * 2002-09-18 2009-03-18 Ebara Corporation Procede de soudage
TWI331345B (en) * 2003-09-12 2010-10-01 Nat Inst Of Advanced Ind Scien A dispersion of nano-size metal particles and a process for forming a layer of an electric conductor with use thereof
WO2006057348A1 (fr) * 2004-11-29 2006-06-01 Dainippon Ink And Chemicals, Inc. Procédé servant à produire une poudre contenant de l'argent traitée en surface et pâte d'argent utilisant la poudre contenant de l'argent traitée en surface
JP5824201B2 (ja) * 2009-09-11 2015-11-25 Dowaエレクトロニクス株式会社 接合材およびそれを用いた接合方法
TWI412569B (zh) * 2010-11-02 2013-10-21 Ind Tech Res Inst 接合材料、接合方法、與接合結構
JP6029719B2 (ja) * 2014-07-31 2016-11-24 Dowaエレクトロニクス株式会社 銀粉及びその製造方法、並びに導電性ペースト

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184578A (ja) * 1989-01-10 1990-07-19 Hitachi Chem Co Ltd 金属板とセラミックスターゲットとの接合体およびセラミックス薄膜の形成法
JP2008161907A (ja) * 2006-12-28 2008-07-17 Hitachi Ltd 低温接合用材料及び接合方法
JP2011094223A (ja) * 2008-11-26 2011-05-12 Mitsuboshi Belting Ltd 無機素材用接合剤及び無機素材の接合体
JP2012161818A (ja) * 2011-02-08 2012-08-30 Mitsubishi Materials Corp 液相拡散接合用Agペースト、および、この液相拡散接合用Agペーストを用いたパワーモジュール用基板の製造方法
WO2016129368A1 (fr) * 2015-02-13 2016-08-18 三菱マテリアル株式会社 Poudre d'argent, composition de pâte et procédé de production de poudre d'argent

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3348537A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018181083A1 (fr) * 2017-03-28 2018-10-04 Dowaエレクトロニクス株式会社 Matériau de liaison et corps lié au moyen de celui-ci
JP2018165387A (ja) * 2017-03-28 2018-10-25 Dowaエレクトロニクス株式会社 接合材およびそれを用いた接合体
JP2018168226A (ja) * 2017-03-29 2018-11-01 三菱マテリアル株式会社 ペースト状銀粉組成物、接合体の製造方法および銀膜の製造方法

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