JP2017052668A - 組成物、接合体の製造方法 - Google Patents
組成物、接合体の製造方法 Download PDFInfo
- Publication number
- JP2017052668A JP2017052668A JP2015177616A JP2015177616A JP2017052668A JP 2017052668 A JP2017052668 A JP 2017052668A JP 2015177616 A JP2015177616 A JP 2015177616A JP 2015177616 A JP2015177616 A JP 2015177616A JP 2017052668 A JP2017052668 A JP 2017052668A
- Authority
- JP
- Japan
- Prior art keywords
- silver powder
- stress relaxation
- composition
- silver
- relaxation body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F2009/0804—Dispersion in or on liquid, other than with sieves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2207/00—Aspects of the compositions, gradients
- B22F2207/11—Gradients other than composition gradients, e.g. size gradients
- B22F2207/13—Size gradients
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/56—Using constraining layers before or during sintering
- C04B2237/567—Using constraining layers before or during sintering made of metal
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0466—Alloys based on noble metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Ceramic Products (AREA)
Abstract
Description
[1] 一次粒子の粒度分布が、粒径20〜70nmの範囲内の第1ピークと、粒径200〜500nmの範囲内の第2ピークと、を有し、
150℃で有機物が50質量%以上分解し、
100℃で加熱した際に、ガス状の二酸化炭素、アセトンの蒸発物及び水の蒸発物が発生する銀粉と、
銀粉焼結体のヤング率よりも低いヤング率を有する応力緩和体と、
溶剤と、を含み、
前記銀粉と前記応力緩和体との質量比が99:1〜60:40であることを特徴とする組成物。
前項1から前項4のいずれかに記載の組成物を用いて前記接合層を形成する接合体の製造方法。
先ず、本発明を適用した一実施形態である組成物の構成について説明する。本実施形態の組成物は、銀粉と、銀粉焼結体よりもヤング率が低い応力緩和体と、溶剤と、を含み概略構成されている。ここで、銀粉は、純銀及び銀を主成分とする銀合金(銀の含有量が99質量%以上)で構成されたものとされている。
本実施形態の組成物は、加熱処理することにより接合層を形成し、隣接する2つ以上の被接合物を接合することができる。
粒径は、走査型電子顕微鏡で一次粒子を1000個以上観察し、画像処理ソフト「ImageJ(アメリカ国立衛生研究所開発)」を用い、SEM像を二値化処理し、粒子と粒子以外の境界を決定した後、各粒子に関し、ピクセル数から面積を算出し、これを真円換算することにより各粒子の一次粒径を求めた。粒径の個数が最も多い上位2つの値を算出し、このうち小さいものを第1ピークの粒径と定義し、大きいものを第2ピークの粒径と定義した。
応力緩和体は、上述の銀粉焼結体よりも低いヤング率を有する。応力緩和体のヤング率としては、具体的には、例えば、3GPa以下が好ましい。3GPa以下で良好な応力緩和効果を得ることができるのは、上記銀粉焼結体の熱膨張・収縮で応力が生じた際、応力緩和体のヤング率が3GPa以下という十分に低い値であることにより、応力緩和体自体が柔軟に変形することができ、接合層の破壊が抑制されるためと推察される。
溶剤は、上記溶剤を単独で用いてもよいし、2種類以上を混合して用いてもよい。
先ず、図1に示すように、銀塩水溶液1とカルボン酸塩水溶液2とを水3中に同時に滴下してカルボン酸銀スラリー4を調整する。
次に、本発明を適用した一実施形態である接合体の構成について、図3を参照して説明する。図3に本実施形態の接合体11を示す。図3に示すように、本実施形態の接合体11は、基板12と、第1の金属層13と、接合層14と、第2の金属層15と、被接合物16と、を備えて概略構成されている。
(接合率)={(初期接合面積)−(剥離面積)}/(初期接合面積)×100
・・・(1)
先ず、基板12の表面に、周知の方法により金属を積層することで、第1の金属層13を積層する。同様にして、被接合物16の表面に、第2の金属層15を積層する。
以上の工程により、接合体11が製造される。
さらに本実施形態においては、応力緩和体のヤング率が3GPa以下であり、かつ熱膨張係数が7×10−5/K以下とされているので、冷熱サイクル耐性に優れた接合層を確実に形成することができる。
(分類I)
先ず、図1に示すように、50℃に保持した1200gのイオン交換水(水3)に、50℃に保持した900gの硝酸銀水溶液(銀塩水溶液1)と、50℃に保持した600gのクエン酸アンモニウム水溶液(カルボン酸塩水溶液2)とを、5分かけて同時に滴下し、クエン酸銀スラリー(カルボン酸銀スラリー4)を調製した。
各液の温度を80℃保持しながら混合スラリーを調整したこと、及び熱処理の際の最高温度が80℃であること以外は、分類Iと同様にして分類IIの銀粉を得た。
各液の温度を30℃保持しながら混合スラリーを調整したこと、及び熱処理の際の昇温速度が0℃/時間、最高温度が30℃、保持時間が5時間であること以外は、分類Iと同様にして分類IIIの銀粉を得た。
各液の温度を15℃に保持しながら混合スラリーを調整したこと、及び熱処理の際の昇温速度が0℃/時間、最高温度が15℃、保持時間が5時間であること以外は、分類Iと同様にして分類IVの銀粉を得た。
熱処理の際の保持時間が8時間であること以外は、分類Iと同様にして分類Vの銀粉を得た。
分類VIの銀粉として、市販の銀粉(三井金属工業社製、「SPQ03S」)を用意した。
分類I〜VIの銀粉の、一次粒子の粒度分布、銀粉を被覆する有機物の所定温度での分解率(有機物の分解率)、粉末状態の銀粉を加熱した際に、銀粉を被覆する有機物が発生するガスの種類(加熱発生ガス種)を測定した。
(実施例1)
応力緩和体として、分類Aの応力緩和体(材質:アクリル樹脂、形状:球状、平均粒径:10μm、ヤング率:3GPa、熱膨張係数:7×10−5/K)を用意した。
分類IIの銀粉を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
分類IIIの銀粉を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
質量比(銀粉:応力緩和体:溶剤)を84:1:15としたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は99:1である。
質量比(銀粉:応力緩和体:溶剤)を50:35:15としたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は60:40である。
応力緩和体として、分類Bの応力緩和体(材質:シリコーン樹脂、形状:球状、平均粒径:5μm、ヤング率:0.04GPa、熱膨張係数:8×10−5/K、)を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
応力緩和体として、分類Eの応力緩和体(材質:ポリイミド、形状:球状、平均粒径:5μm、ヤング率:4GPa、熱膨張係数:2×10−5/K、)を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
応力緩和体を用いなかったこと、及び質量比(銀粉:応力緩和体:溶剤)を85:0:15としたこと以外は実施例1と同様にして組成物を得た。
分類IVの銀粉を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
分類Vの銀粉を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
分類VIの銀粉を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
質量比(銀粉:応力緩和体:溶剤)を84.5:0.5:15としたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は99.4:0.6である。
質量比(銀粉:応力緩和体:溶剤)を45:40:15としたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は53:47である。
応力緩和体として、分類Cの応力緩和体(材質:銅、形状:球状、平均粒径:5μm、ヤング率:128GPa、熱膨張係数:2×10−6/K)を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
応力緩和体として、分類Dの応力緩和体(材質:ポリエチレン樹脂、形状:球状、平均粒径:5μm、ヤング率:0.2GPa、熱膨張係数:20×10−5/K)を用いたこと以外は実施例1と同様にして組成物を得た。なお、銀粉と応力緩和体の質量比(銀粉:応力緩和体)は94:6である。
上述した各実施例及び各比較例の組成物を用いて接合体を作製した。
接合体の作製は、先ず、各基板として銀板を用意し、銀板上に実施例1の組成物を、メタルマスク(孔サイズ:縦3mm×横3mm×厚さ50μm)を用いて印刷し成形した。次に、組成物の上に、表面を銀で被覆したシリコンチップ(サイズ:縦2.5mm×横2.5mm×厚さ200μm)を乗せ、大気雰囲気中において150℃の温度で30分間保持することで焼成を行った。これにより銀板とシリコンチップの間に接合層が形成され、接合体を得た。
各実施例及び各比較例の組成物を用いて作製した接合体について、冷熱サイクル耐性を測定した。冷熱サイクル耐性は、冷熱サイクル試験機に接合体を投入後、装置内温度を25℃から−40℃まで降温し、10分間保持した後、180℃まで昇温し、20分間保持した後、25℃まで降温した。これを1サイクルとして、3000サイクル経過した時の接合率で評価した。接合率は、下記式(2)で算出した。
(接合率)={(初期接合面積)−(剥離面積)}/(初期接合面積)×100
・・・(2)
また、ヤング率4GPaの応力緩和体を用いた実施例7においては、実施例1〜6に比べて冷熱サイクル耐性がわずかに劣るものの、比較例に比べて冷熱サイクル耐性は優れていた。
2…カルボン酸塩水溶液
3…水
4…カルボン酸銀スラリー
5…還元剤水溶液
11…接合体
12…基板
13…第1の金属層
14…接合層
15…第2の金属層
16…被接合物
17,18…界面
Claims (5)
- 一次粒子の粒度分布が、粒径20〜70nmの範囲内の第1ピークと、粒径200〜500nmの範囲内の第2ピークと、を有し、
150℃で有機物が50質量%以上分解し、
100℃で加熱した際に、ガス状の二酸化炭素、アセトンの蒸発物及び水の蒸発物が発生する銀粉と、
銀粉焼結体のヤング率よりも低いヤング率を有する応力緩和体と、
溶剤と、を含み、
前記銀粉と前記応力緩和体との質量比が99:1〜60:40であることを特徴とする組成物。 - 前記応力緩和体のヤング率が3GPa以下とされていることを特徴とする請求項1に記載の組成物。
- 前記応力緩和体の形状が球状であることを特徴とする請求項1又は請求項2に記載の組成物。
- 前記応力緩和体の材質が、アクリル樹脂又はシリコーン樹脂であることを特徴とする請求項1から請求項3のいずれかに記載の組成物。
- 第一の部材と第二の部材とが接合層を介して接合されている接合体の製造方法であって、
請求項1から請求項4のいずれかに記載の組成物を用いて前記接合層を形成する接合体の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015177616A JP2017052668A (ja) | 2015-09-09 | 2015-09-09 | 組成物、接合体の製造方法 |
TW105125780A TW201726796A (zh) | 2015-09-09 | 2016-08-12 | 組成物、接合體之製造方法 |
US15/757,740 US20190047046A1 (en) | 2015-09-09 | 2016-08-15 | Composition and method of producing bonded body |
EP16844119.4A EP3348537A4 (en) | 2015-09-09 | 2016-08-15 | COMPOSITION AND METHOD FOR THE PRODUCTION OF AN ATTRIBUTED BODY |
CN201680051556.0A CN108025987A (zh) | 2015-09-09 | 2016-08-15 | 组合物、接合体的制造方法 |
KR1020187003349A KR20180051488A (ko) | 2015-09-09 | 2016-08-15 | 조성물, 접합체의 제조 방법 |
PCT/JP2016/073821 WO2017043256A1 (ja) | 2015-09-09 | 2016-08-15 | 組成物、接合体の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015177616A JP2017052668A (ja) | 2015-09-09 | 2015-09-09 | 組成物、接合体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2017052668A true JP2017052668A (ja) | 2017-03-16 |
Family
ID=58239443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015177616A Pending JP2017052668A (ja) | 2015-09-09 | 2015-09-09 | 組成物、接合体の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20190047046A1 (ja) |
EP (1) | EP3348537A4 (ja) |
JP (1) | JP2017052668A (ja) |
KR (1) | KR20180051488A (ja) |
CN (1) | CN108025987A (ja) |
TW (1) | TW201726796A (ja) |
WO (1) | WO2017043256A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018172764A (ja) * | 2017-03-31 | 2018-11-08 | 三菱マテリアル株式会社 | 金属粒子凝集体とその製造方法、ペースト状金属粒子組成物および接合体の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018165387A (ja) * | 2017-03-28 | 2018-10-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合体 |
JP6859799B2 (ja) * | 2017-03-29 | 2021-04-14 | 三菱マテリアル株式会社 | ペースト状銀粉組成物、接合体の製造方法および銀膜の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02184578A (ja) * | 1989-01-10 | 1990-07-19 | Hitachi Chem Co Ltd | 金属板とセラミックスターゲットとの接合体およびセラミックス薄膜の形成法 |
JP2008161907A (ja) * | 2006-12-28 | 2008-07-17 | Hitachi Ltd | 低温接合用材料及び接合方法 |
JP2011094223A (ja) * | 2008-11-26 | 2011-05-12 | Mitsuboshi Belting Ltd | 無機素材用接合剤及び無機素材の接合体 |
JP2012161818A (ja) * | 2011-02-08 | 2012-08-30 | Mitsubishi Materials Corp | 液相拡散接合用Agペースト、および、この液相拡散接合用Agペーストを用いたパワーモジュール用基板の製造方法 |
WO2016129368A1 (ja) * | 2015-02-13 | 2016-08-18 | 三菱マテリアル株式会社 | 銀粉及びペースト状組成物並びに銀粉の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60326760D1 (de) * | 2002-09-18 | 2009-04-30 | Ebara Corp | Verfahren zum verbinden |
WO2005025787A1 (ja) * | 2003-09-12 | 2005-03-24 | National Institute Of Advanced Industrial Science And Technology | 微細な液滴の形状で噴射し、積層塗布可能な金属ナノ粒子分散液 |
EP1825940B1 (en) * | 2004-11-29 | 2012-06-13 | DIC Corporation | Method for producing surface-treated silver-containing powder |
JP5824201B2 (ja) * | 2009-09-11 | 2015-11-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
TWI412569B (zh) * | 2010-11-02 | 2013-10-21 | Ind Tech Res Inst | 接合材料、接合方法、與接合結構 |
JP6029719B2 (ja) * | 2014-07-31 | 2016-11-24 | Dowaエレクトロニクス株式会社 | 銀粉及びその製造方法、並びに導電性ペースト |
-
2015
- 2015-09-09 JP JP2015177616A patent/JP2017052668A/ja active Pending
-
2016
- 2016-08-12 TW TW105125780A patent/TW201726796A/zh unknown
- 2016-08-15 US US15/757,740 patent/US20190047046A1/en not_active Abandoned
- 2016-08-15 WO PCT/JP2016/073821 patent/WO2017043256A1/ja active Application Filing
- 2016-08-15 KR KR1020187003349A patent/KR20180051488A/ko unknown
- 2016-08-15 CN CN201680051556.0A patent/CN108025987A/zh active Pending
- 2016-08-15 EP EP16844119.4A patent/EP3348537A4/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02184578A (ja) * | 1989-01-10 | 1990-07-19 | Hitachi Chem Co Ltd | 金属板とセラミックスターゲットとの接合体およびセラミックス薄膜の形成法 |
JP2008161907A (ja) * | 2006-12-28 | 2008-07-17 | Hitachi Ltd | 低温接合用材料及び接合方法 |
JP2011094223A (ja) * | 2008-11-26 | 2011-05-12 | Mitsuboshi Belting Ltd | 無機素材用接合剤及び無機素材の接合体 |
JP2012161818A (ja) * | 2011-02-08 | 2012-08-30 | Mitsubishi Materials Corp | 液相拡散接合用Agペースト、および、この液相拡散接合用Agペーストを用いたパワーモジュール用基板の製造方法 |
WO2016129368A1 (ja) * | 2015-02-13 | 2016-08-18 | 三菱マテリアル株式会社 | 銀粉及びペースト状組成物並びに銀粉の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018172764A (ja) * | 2017-03-31 | 2018-11-08 | 三菱マテリアル株式会社 | 金属粒子凝集体とその製造方法、ペースト状金属粒子組成物および接合体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2017043256A1 (ja) | 2017-03-16 |
TW201726796A (zh) | 2017-08-01 |
EP3348537A1 (en) | 2018-07-18 |
EP3348537A4 (en) | 2019-03-13 |
CN108025987A (zh) | 2018-05-11 |
KR20180051488A (ko) | 2018-05-16 |
US20190047046A1 (en) | 2019-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102272847B1 (ko) | 접합재 및 그것을 사용한 접합 방법 | |
EP3012048B1 (en) | Joining material and joining method using same | |
EP2581156B1 (en) | Low-temperature-sinterable bonding material, and bonding method using the bonding material | |
JP2017031470A (ja) | 接合材及び接合体の製造方法 | |
JP6153077B2 (ja) | 金属ナノ粒子ペースト、それを含有する接合材料、およびそれを用いた半導体装置 | |
JP2017111975A (ja) | 接合材及び接合体の製造方法 | |
WO2017043256A1 (ja) | 組成物、接合体の製造方法 | |
TW201830411A (zh) | 接合材料及使用其之接合方法 | |
JP6154194B2 (ja) | 接合用金属ペースト | |
TW201312595A (zh) | 金屬奈米粒子糊,接合方法,經接合元件及電子基板 | |
JP6659026B2 (ja) | 銅粒子を用いた低温接合方法 | |
JP5613253B2 (ja) | 半導体素子接合用の貴金属ペースト | |
JP6032110B2 (ja) | 金属ナノ粒子材料、それを含有する接合材料、およびそれを用いた半導体装置 | |
JP5923698B2 (ja) | 貴金属ペーストを用いた半導体デバイスの製造方法 | |
WO2024029487A1 (ja) | 銀含有組成物及び銀焼結体 | |
JP7380256B2 (ja) | 接合用シート | |
TWI565795B (zh) | 沿厚度方向具有優越導熱性的散熱片的製造方法及所製造的散熱片 | |
JP2014110282A (ja) | 金属微粒子含有ペーストを用いる接合方法 | |
JP6859799B2 (ja) | ペースト状銀粉組成物、接合体の製造方法および銀膜の製造方法 | |
JP6679909B2 (ja) | 接合材及び接合体の製造方法 | |
JP4772611B2 (ja) | 熱膨張係数が異なる部材の接合方法 | |
JP2016074935A (ja) | 溶射用複合粉体材料及び溶射絶縁基板 | |
WO2023190451A1 (ja) | 接合体の製造方法 | |
JP2023038748A (ja) | 金属ナノ粒子並びに第二の金属粒子を主成分とする接合剤を付着させた加熱接合材、及び電子機器の接合方法 | |
US20120014073A1 (en) | Conductive nanoparticle substrate and method of manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180327 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20181012 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191001 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200327 |