WO2017036102A1 - 一种固定装置和蒸镀方法 - Google Patents

一种固定装置和蒸镀方法 Download PDF

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Publication number
WO2017036102A1
WO2017036102A1 PCT/CN2016/074098 CN2016074098W WO2017036102A1 WO 2017036102 A1 WO2017036102 A1 WO 2017036102A1 CN 2016074098 W CN2016074098 W CN 2016074098W WO 2017036102 A1 WO2017036102 A1 WO 2017036102A1
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Prior art keywords
substrate
ferromagnetic
magnetic field
processed
field generating
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PCT/CN2016/074098
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English (en)
French (fr)
Inventor
高昕伟
王欣欣
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京东方科技集团股份有限公司
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Priority to US15/517,796 priority Critical patent/US10669623B2/en
Publication of WO2017036102A1 publication Critical patent/WO2017036102A1/zh
Priority to US16/846,723 priority patent/US11280000B2/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a fixing device and an evaporation method.
  • OLED organic light-emitting diode
  • the substrate to be processed includes a substrate, and a front surface of the substrate is used to form a display device (including an OLED, a thin film transistor, etc.), and the back surface of the substrate is covered by a double-sided tape during the fixing process. Fixed to the front of the load bearing abutment. After the substrate to be processed is fixed to the carrier substrate, a metal mask is disposed on the side of the substrate to be processed away from the carrier substrate, and then the electroluminescent material can be evaporated on the front surface of the substrate.
  • double-sided tape is a consumable item, so it needs to be replaced frequently, which is not conducive to continuous production.
  • the invention provides a fixing device and an evaporation method, which can effectively fix a substrate to be processed and a bearing base during the evaporation process.
  • the present invention provides a fixing device for fixing a substrate to be processed under a carrier substrate during an evaporation process, the substrate to be processed comprising: a substrate substrate, the substrate substrate The front side is for forming a display device, and the front or back surface of the base substrate is formed with a ferromagnetic material, and the back surface of the bearing base corresponds to the ferromagnetic material The position is provided with a magnetic field generating device;
  • the magnetic field generating device generates a magnetic field for the ferromagnetic material to approach the magnetic field generating device under the magnetic field generated by the magnetic field generating device, so that the front surface of the bearing base and the base substrate The back is fixed.
  • the ferromagnetic material is located on a back surface of the base substrate, and constitutes a plurality of ferromagnetic patterns, wherein the ferromagnetic pattern is located in a pixel region of the substrate to be processed;
  • the magnetic field generating device includes a plurality of first magnetic structures, each of the first magnetic structures corresponding to at least one of the ferromagnetic patterns.
  • the ferromagnetic pattern has a thickness greater than or equal to 5 nm.
  • the ferromagnetic pattern has a rectangular shape.
  • the ferromagnetic pattern is in one-to-one correspondence with the pixel area, and the ferromagnetic pattern is located at an intermediate position of the corresponding pixel area.
  • all of the ferromagnetic patterns are electrically connected.
  • the substrate to be processed further includes: a flexible substrate disposed between the display device and the substrate, wherein the flexible substrate is mixed with a powdery ferromagnetic material;
  • the magnetic field generating device includes a plurality of first magnetic structures, the first magnetic structures being disposed corresponding to pixel regions of the substrate to be processed.
  • the material of the flexible substrate comprises: polyimide, polycarbonate or polyether sulfone.
  • the substrate to be processed further includes: a flexible substrate disposed between the display device and the substrate;
  • the ferromagnetic material is located on a side of the flexible substrate away from the substrate, the ferromagnetic material is configured to form a plurality of ferromagnetic patterns, and the ferromagnetic pattern is located in a pixel area of the substrate to be processed;
  • the magnetic field generating device includes a plurality of first magnetic structures, each of the first magnetic structures corresponding to at least one of the ferromagnetic patterns.
  • the material of the flexible substrate comprises: polyimide, polycarbonate or polyether sulfone.
  • the ferromagnetic pattern has a thickness of 5 nm to 1 mm.
  • the back surface of the carrier base is disposed with a plurality of second magnetic structures corresponding to the non-pixel area of the substrate to be processed;
  • the fixing device further includes:
  • the second magnetic structure generates a magnetic field for the mask used in the evaporation process to approach the corresponding second magnetic structure under the magnetic field generated by the second magnetic structure.
  • the display device includes: a thin film transistor and an insulating layer formed on a side of the thin film transistor and away from the substrate, the ferromagnetic material is located on the insulating layer and away from the lining One side of the base substrate;
  • the ferromagnetic material constitutes a plurality of ferromagnetic patterns, the ferromagnetic patterns being located in a non-pixel region of the substrate to be processed;
  • the magnetic field generating device includes a plurality of first magnetic structures, each of the first magnetic structures corresponding to at least one of the ferromagnetic patterns.
  • the ferromagnetic pattern has a thickness greater than or equal to 5 nm.
  • the width of the ferromagnetic pattern is less than the line width of the reticle used in the evaporation process.
  • the ferromagnetic material is at least one of iron, cobalt, and nickel.
  • the magnetic field generating device is an electromagnet.
  • the present invention provides an evaporation method comprising:
  • the front surface of the carrier base is fixed to the back surface of the base substrate by the above-described fixing means.
  • the invention provides a fixing device and an evaporation method, wherein the fixing device is used for fixing a substrate to be processed and a bearing base in an evaporation process, and the substrate to be processed comprises: a substrate, a front surface of the substrate For forming a display device, a front surface or a back surface of the base substrate is formed with a ferromagnetic material, and a magnetic field generating device is disposed at a position of the back surface of the supporting base corresponding to the ferromagnetic material, the fixing device comprising: a magnetic field generating device generating a magnetic field for supplying iron The magnetic material approaches the magnetic field generating device under the action of a magnetic field generated by the magnetic field generating device, and the front surface of the carrier substrate is fixed to the back surface of the substrate.
  • a magnetic field is generated by a magnetic field generating device such that the magnetic field generating device and the ferromagnetic material tend to each other Nearly, the substrate to be processed is thereby fixed under the carrier base. Since the attraction between the magnetic field generating device and the ferromagnetic material does not decrease as the process time becomes longer, the problem that the substrate to be processed is dropped or broken during the evaporation process can be effectively avoided.
  • FIG. 1 is a flow chart showing the operation of a fixing device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram of a first fixing scheme of a substrate to be processed and a bearing base in the first embodiment of the present invention
  • FIG. 3 is a schematic structural view of a substrate to be processed in FIG. 2;
  • FIG. 4 is a schematic diagram of a second fixing scheme of a substrate to be processed and a bearing base in the first embodiment of the present invention
  • FIG. 5 is a schematic diagram of a third fixing scheme of a substrate to be processed and a bearing base in the first embodiment of the present invention
  • FIG. 6 is a schematic diagram of a fourth fixing scheme of a substrate to be processed and a bearing base in the first embodiment of the present invention
  • FIG. 7 is a schematic diagram showing the relationship between the first magnetic structure, the ferromagnetic image, and the mask in FIG. 6.
  • the fixing device is used for fixing a substrate to be processed under a bearing base during an evaporation process, wherein
  • the substrate to be processed includes: a substrate 1 having a front surface for forming a display device (not shown), a front surface or a back surface of the substrate substrate 1 formed with a ferromagnetic material, and a back surface of the carrier substrate 2 corresponding to iron
  • the position of the magnetic material is provided with a magnetic field generating device, and the fixing device comprises:
  • Step 101 The magnetic field generating device generates a magnetic field, so that the ferromagnetic material approaches the magnetic field generating device under the action of the magnetic field generated by the magnetic field generating device, so that the bearing base 2
  • the front surface is fixed to the back surface of the base substrate 1.
  • the magnetic field generating means by providing a ferromagnetic material in front of the front or back surface of the base substrate 1, and then providing a magnetic field generating means at a position corresponding to the ferromagnetic material on the back surface of the carrier base 2, the magnetic field generating means generates a magnetic field so that The magnetic field generating device and the ferromagnetic material approach each other to fix the substrate to be processed under the carrier base 2. Since the attraction between the magnetic field generating device and the ferromagnetic material does not decrease as the process time becomes longer, the problem that the substrate to be processed is dropped or broken during the evaporation process can be effectively avoided.
  • front side and the “back side” in this embodiment are opposite faces.
  • front side specifically refers to the lower surface of the corresponding structure
  • back side specifically refers to the upper surface of the corresponding structure.
  • FIG. 2 is a schematic diagram of a first fixing scheme of a substrate to be processed and a supporting base in the first embodiment of the present invention
  • FIG. 3 is a schematic structural view of the substrate to be processed in FIG. 2, as shown in FIG. 2 and FIG.
  • the material is located on the back surface of the base substrate 1 and constitutes a plurality of ferromagnetic patterns 4, the ferromagnetic pattern 4 is located in the pixel area of the substrate to be processed, and the magnetic field generating device comprises a plurality of first magnetic structures 3, each of the first magnetic structures 3 Corresponding to at least one ferromagnetic pattern 4.
  • the ferromagnetic pattern 4 can be brought into contact with and fixed to the front surface of the carrier base 2, thereby fixing the substrate substrate 1 to The purpose is under the abutment.
  • the thickness of the ferromagnetic pattern is greater than or equal to 5 nm.
  • the base substrate 1 in this embodiment includes a glass substrate.
  • the magnetic field generating device is composed of an electromagnet, that is, each of the first magnetic structures 3 can be an independent electromagnet, and the electromagnet and the corresponding iron can be controlled by controlling the intensity of the magnetic field output by each electromagnet.
  • the substrate to be processed will have a convexity at its intermediate position. At this time, it is possible to increase the position corresponding to the middle of the substrate to be processed.
  • the electromagnet is used to increase the attractive force between the electromagnet and the ferromagnetic pattern 4 located at a position intermediate the substrate to be processed, so that the problem of convexity in the middle position of the substrate to be processed can be effectively solved.
  • the magnetic field strength of each electromagnet output can be adjusted according to the actual situation of the substrate to be processed in the evaporation process to ensure that the substrate to be processed is always in a flat state.
  • the shape of the ferromagnetic pattern 4 is a rectangle, the ferromagnetic pattern 4 is in one-to-one correspondence with the pixel area, and the ferromagnetic pattern 4 is located at an intermediate position of the corresponding pixel area.
  • the ferromagnetic pattern 4 may be formed at one time by sputtering, electron beam evaporation, or the like, or the ferromagnetic pattern 4 may be formed by a process such as film formation, exposure, etching, development, or the like.
  • all of the ferromagnetic patterns 4 are electrically connected by the metal wires 7. At this time, a loop is formed between the ferromagnetic patterns 4, so that static electricity adhering to the substrate to be processed can be effectively removed.
  • the thickness of the ferromagnetic pattern 4 needs to be greater than or equal to 5 nm. Also. In order to eliminate the influence of the ferromagnetic pattern 4 on the light-emitting brightness of the finished display device, after the evaporation process is completed, the ferromagnetic pattern 4 on the back surface of the base substrate 1 can be removed by an etching process.
  • the metal mask 6 used in the evaporation process is also subjected to corresponding deformation under the influence of its own gravity, temperature and the like.
  • a plurality of second magnetic structures 5 are disposed on the back surface of the supporting base 2 and corresponding to the non-pixel area of the substrate to be processed, and the second magnetic structure 5 is used in the evaporation process.
  • a force is generated between the metal mask plates 6 used.
  • the fixing device includes, in addition to the foregoing step 101, the following:
  • Step 102 The second magnetic structure 5 generates a magnetic field such that the mask 6 used in the evaporation process approaches each other under the action of the magnetic field generated by the second magnetic structure 5 and the corresponding second magnetic structure 5.
  • FIG. 4 is a schematic diagram of a second fixing scheme of a substrate to be processed and a carrier base according to Embodiment 1 of the present invention.
  • the substrate to be processed in FIG. 4 further includes an application.
  • a flexible substrate in a flexible display device Specifically, a flexible substrate 9 is disposed between the display device and the base substrate 1, and the flexible substrate 9 is mixed with a powdery ferromagnetic material; the magnetic field generating device includes a plurality of first magnetic structures 3, and the first magnetic structure 3 is set corresponding to the pixel area of the substrate to be processed.
  • the material of the flexible substrate includes: polyimide, polycarbonate or polyether sulfone.
  • a sacrificial layer 8 may be disposed between the base substrate 1 and the flexible substrate 9. After the processing process is completed, the sacrificial layer 8 is removed by a specific process, thereby separating the flexible substrate 9 from the substrate substrate 1.
  • each of the first magnetic structures 3 can generate a force between the flexible substrate 9 mixed with the powder, so that the back surface of the base substrate 1 is in contact with and fixed to the front surface of the carrier base 2, thereby achieving The base substrate 1 is fixed for the purpose of being under the abutment.
  • each of the first magnetic structures 3 in FIG. 4 can also be an independent electromagnet, and the intensity of the magnetic field outputted by each electromagnet is adjusted accordingly to ensure that the substrate to be processed is always in a flat state.
  • the second magnetic structure 5 in FIG. 2 can also be disposed on the back surface of the carrier base 2 corresponding to the non-pixel area to control the deformation of the mask 6 used in the evaporation process.
  • the specific principle refer to the foregoing corresponding content, and details are not described herein again.
  • FIG. 5 is a schematic diagram of a third fixing scheme of a substrate to be processed and a carrier base according to Embodiment 1 of the present invention. As shown in FIG. 5, a flexible substrate 9 is disposed between the display device and the substrate 1 , and the flexible substrate is disposed.
  • the material of 9 includes: polyimide, polycarbonate or polyether sulfone; the ferromagnetic material is located on the side of the flexible substrate 9 away from the substrate 1 (ferromagnetic material and display There is an insulating layer between the devices, the ferromagnetic material constitutes a plurality of ferromagnetic patterns 4, the ferromagnetic pattern 4 is located in the pixel area of the substrate to be processed; the magnetic field generating device comprises a plurality of first magnetic structures 3, each of the first magnetic points The structure 3 corresponds to at least one ferromagnetic pattern 4.
  • each of the first magnetic structures 3 in FIG. 5 can also be an independent electromagnet, and the intensity of the magnetic field outputted by each electromagnet is adjusted accordingly to ensure that the substrate to be processed is always in a flat state.
  • the ferromagnetic pattern 4 since the ferromagnetic pattern 4 cannot be removed by the etching process, the ferromagnetic pattern 4 reduces the amount of light emitted by the finished flexible display device. Therefore, in order to reduce the influence of the ferromagnetic pattern 4 on the amount of light emitted from the finished display device, it is necessary to design the film thickness of the ferromagnetic pattern 4 to be thin. However, if the film thickness of the ferromagnetic pattern 4 is too thin, the force between the first magnetic structure 3 and the ferromagnetic pattern 4 is reduced, and there is a possibility that the substrate to be processed cannot be fixed under the carrier base 2. Based on the above considerations, in the scheme shown in Fig. 5, the thickness of the ferromagnetic pattern 4 is 5 nm to 1 mm.
  • the second magnetic structure 5 in FIG. 2 can also be disposed on the back surface of the carrier base 2 corresponding to the non-pixel area to control the deformation of the mask 6 used in the evaporation process.
  • the specific principle refer to the foregoing corresponding content, and details are not described herein again.
  • a sacrificial layer 8 may be disposed between the substrate substrate 1 and the flexible substrate 9 (after the processing process is completed, the sacrificial layer 8 is removed by a specific process, thereby making the flexible lining The bottom 9 is separated from the base substrate 1).
  • FIG. 6 is a schematic diagram of a fourth fixing scheme of a substrate to be processed and a supporting base in the first embodiment of the present invention
  • FIG. 7 is a schematic diagram of the relationship between the first magnetic structure, the ferromagnetic pattern and the mask in FIG. 6, FIG. As shown in FIG.
  • the display device includes: a thin film transistor 10 and an insulating layer 11 formed on a side of the thin film transistor 10 away from the substrate 1 , the ferromagnetic material being located on the insulating layer 11 and away from the substrate 1 On one side, the ferromagnetic material constitutes a plurality of ferromagnetic patterns 4, the ferromagnetic pattern 4 is located in a non-pixel region of the substrate to be processed, and the magnetic field generating device comprises a plurality of first magnetic structures 3, each of the first magnetic structures 3 and at least one iron The magnetic pattern 4 corresponds.
  • the thickness of the ferromagnetic pattern is greater than or equal to 5 nm.
  • the ferromagnetic pattern 4 is located only in the non-pixel region of the substrate to be processed.
  • the width of the ferromagnetic pattern 4 is smaller than the line width of the mask 6 used in the evaporation process.
  • the size of the first magnetic structure 3 can be set relatively large. Taking the example shown in FIG. 7 as an example, the corresponding orthographic projection of the ferromagnetic pattern 4 on the mask 6 covers the area A on the mask 6, and the area B on the mask 6 is not covered by the projection of the ferromagnetic pattern 4. .
  • the first magnetic structure 3 can generate not only the force F1 with the ferromagnetic pattern 4 but also the force F2 with the portion of the corresponding region B on the mask 6. Therefore, in the scheme shown in Fig. 6, the effect of controlling the substrate to be processed and the deformation of the mask plate 6 used in the vapor deposition process can be achieved only by the first magnetic structure 3.
  • the first magnetic structure 3 can be used to fix the substrate to be processed, and the second magnetic structure 5 can be used to implement the mask. The deformation of 6 is adjusted. At this time, the first magnetic structure 3 is disposed corresponding to the area A, and the second magnetic structure 5 is disposed corresponding to the area B.
  • the magnetic field generating device in the scheme shown in Fig. 6 may be an electromagnet.
  • the ferromagnetic material may be at least one of iron, cobalt, and nickel.
  • the second embodiment of the present invention further provides an evaporation method, comprising: fixing the substrate substrate under the bearing base in the first embodiment; and performing an evaporation process on the substrate to be processed.
  • the step of fixing the base substrate under the bearing base can be referred to the above implementation. The corresponding content in the first example will not be described here.
  • Embodiments of the present invention provide a fixing device and an evaporation method, in which a ferromagnetic material is previously disposed on a front surface or a back surface of a base substrate in a process of fixing the base substrate under the carrier substrate, and then on the carrier substrate
  • the back surface of the stage is provided with a magnetic field generating device corresponding to the position of the ferromagnetic material, and the magnetic field generating device generates a magnetic field so that the magnetic field generating device and the ferromagnetic material approach each other, thereby fixing the substrate to be processed under the bearing base. Since the attraction between the magnetic field generating device and the ferromagnetic material does not decrease as the process time becomes longer, the problem that the substrate to be processed is dropped or broken during the evaporation process can be effectively avoided.

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Abstract

一种固定装置，用于在蒸镀过程中将待处理基板固定在承载基台(2)的下方，待处理基板包括：衬底基板(1)，衬底基板(1)的正面或背面形成有铁磁性材料，承载基台(2)的背面对应铁磁性材料的位置设置有磁场发生装置，磁场发生装置产生磁场，以使磁铁材料在磁场发生装置产生的磁场作用下与磁场发生装置彼此趋近，将承载基台(2)的正面与衬底基板(1)的背面固定。还公开了一种蒸镀方法。

Description

一种固定装置和蒸镀方法 技术领域
本发明涉及显示技术领域，特别涉及一种固定装置和蒸镀方法。
背景技术
在有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示产品制作领域，采用蒸镀的方法制作OLED产品是相对比较成熟的一种方法。
在使用蒸镀方法制作OLED显示产品时，需要将待处理基板固定在承载基台的下方。具体地，该待处理基板包括一衬底基板，该衬底基板的正面用于形成显示器件(包括：OLED、薄膜晶体管等)，在固定过程中，通过双面胶带将该衬底基板的背面与承载基台的正面固定。在待处理基板与承载基台固定后，再在待处理基板远离承载基台一侧设置一金属掩膜版，然后可在衬底基板的正面蒸镀电致发光材料。
然而，在实际蒸镀过程中，随着工艺时间变长，双面胶的粘附力下降，从而导致待处理基板与承载基台分离，进而发生待处理基板掉落、破裂等问题。与此同时，双面胶为易耗品，则需要经常进行更换，不利于持续生产。
发明内容
本发明提供了一种固定装置和蒸镀方法，可在蒸镀过程中有效地使得待处理基板与承载基台进行固定。
为实现上述目的，本发明提供了一种固定装置，用于在蒸镀过程中将待处理基板固定在承载基台的下方，所述待处理基板包括：衬底基板，所述衬底基板的正面用于形成显示器件，所述衬底基板的正面或背面形成有铁磁性材料，承载基台的背面对应所述铁磁性材料的 位置设置有磁场发生装置；其中
所述磁场发生装置产生磁场，以供所述铁磁性材料在所述磁场发生装置产生的磁场作用下与所述磁场发生装置彼此趋近，使所述承载基台的正面与所述衬底基板的背面固定。
可选地，所述铁磁性材料位于所述衬底基板的背面，且构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的像素区域内；
所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
可选地，所述铁磁性图形的厚度大于或等于5nm。
可选地，所述铁磁性图形的形状为矩形。
可选地，所述铁磁性图形与所述像素区域一一对应，所述铁磁性图形位于对应的所述像素区域的中间位置。
可选地，全部所述铁磁性图形电连接。
可选地，所述待处理基板还包括：设置于所述显示器件与所述衬底基板之间的柔性衬底，所述柔性衬底中混合有粉状的铁磁性材料；
所述磁场发生装置包括多个第一磁力结构，所述第一磁力结构与所述待处理基板的像素区域对应设置。
可选地，所述柔性衬底的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜。
可选地，所述待处理基板还包括：设置于所述显示器件与所述衬底基板之间的柔性衬底；
所述铁磁性材料位于所述柔性衬底上远离所述衬底基板的一侧，所述铁磁性材料构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的像素区域；
所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
可选地，所述柔性衬底的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜。
可选地，所述铁磁性图形的厚度为5nm～1mm。
可选地，所述承载基台的背面对应所述待处理基板的非像素区域设置有多个第二磁力结构；
所述固定装置还包括：
所述第二磁力结构产生磁场，以供蒸镀过程中所使用的掩膜版在所述第二磁力结构产生的磁场作用下与对应的所述第二磁力结构彼此趋近。
可选地，所述显示器件包括：薄膜晶体管和形成于所述薄膜晶体管上且远离所述衬底基板的一侧的绝缘层，所述铁磁性材料位于所述绝缘层上且远离所述衬底基板的一侧；
所述铁磁性材料构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的非像素区域；
所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
可选地，所述铁磁性图形的厚度大于或等于5nm。
可选地，所述铁磁性图形的宽度小于在蒸镀过程中所使用的掩膜版的线宽。
可选地，所述铁磁性材料为铁、钴、镍中的至少一种。
可选地，所述磁场发生装置为电磁铁。
为实现上述目的，本发明提供了一种蒸镀方法，包括：
采用上述的固定装置将所述承载基台的正面与所述衬底基板的背面固定。
本发明具有以下有益效果：
本发明提供了一种固定装置和蒸镀方法，其中，该固定装置用于在蒸镀过程中将待处理基板与承载基台固定，待处理基板包括：衬底基板，该衬底基板的正面用于形成显示器件，衬底基板的正面或背面形成有铁磁性材料，承载基台的背面对应铁磁性材料的位置设置有磁场发生装置，该固定装置包括：磁场发生装置产生磁场，以供铁磁性材料在磁场发生装置产生的磁场作用下与所述磁场发生装置彼此趋近，使承载基台的正面与衬底基板的背面固定。在本发明中，通过磁场发生装置产生磁场，以使得磁场发生装置与铁磁性材料彼此趋 近，从而将待处理基板固定在承载基台的下方。由于磁场发生装置与铁磁性材料之间的吸引力不会随着工艺时间变长而减弱，因此可有效的避免待处理基板在蒸镀过程中发生掉落、破裂等问题。
附图说明
图1为本发明实施例一提供的一种固定装置的操作的流程图；
图2为本发明实施例一中待处理基板与承载基台的第一种固定方案的示意图；
图3为图2中待处理基板的结构示意图；
图4为本发明实施例一中待处理基板与承载基台的第二种固定方案的示意图；
图5为本发明实施例一中待处理基板与承载基台的第三种固定方案的示意图；
图6为本发明实施例一中待处理基板与承载基台的第四种固定方案的示意图；
图7为图6中第一磁力结构、铁磁性图像和掩膜版的关系示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的一种固定装置和蒸镀方法进行详细描述。
实施例一
图1为本发明实施例一提供的一种固定装置的操作的流程图，如图1所示，该固定装置用于在蒸镀过程中将待处理基板固定在承载基台的下方，其中，待处理基板包括：衬底基板1，该衬底基板1的正面用于形成显示器件(未示出)，衬底基板1的正面或背面形成有铁磁性材料，承载基台2的背面对应铁磁性材料的位置设置有磁场发生装置，该固定装置包括：
步骤101：磁场发生装置产生磁场，以使铁磁性材料在磁场发生装置产生的磁场作用下与所述磁场发生装置彼此趋近，使承载基台2 的正面与衬底基板1的背面固定。
在本实施例中，通过在衬底基板1的正面或背面预先设置铁磁性材料，然后在承载基台2的背面对应铁磁性材料的位置设置有磁场发生装置，磁场发生装置产生磁场，以使得磁场发生装置与铁磁性材料之间彼此趋近，从而将待处理基板固定在承载基台2的下方。由于磁场发生装置与铁磁性材料之间的吸引力不会随着工艺时间变长而减弱，因此可有效的避免待处理基板在蒸镀过程中发生掉落、破裂等问题。
需要说明的是，本实施例中的“正面”和“背面”为相对的两个面。在附图中，“正面”具体是指对应结构的下表面，“背面”具体是指对应结构的上表面。
下面将结合附图来对本实施例中待处理基板与承载基台2固定的几种具体方式进行详细说明。
图2为本发明实施例一中待处理基板与承载基台的第一种固定方案的示意图，图3为图2中待处理基板的结构示意图，如图2和图3所示，该铁磁性材料位于衬底基板1的背面，且构成多个铁磁性图形4，铁磁性图形4位于待处理基板的像素区域内，磁场发生装置包括多个第一磁力结构3，每个第一磁力结构3与至少一个铁磁性图形4对应。
在图2中，通过第一磁力结构3与对应的铁磁性图形4之间的吸引力，可以使得铁磁性图形4与承载基台2的正面接触且固定，从而达到将衬底基板1固定在正在基台下方的目的。与此同时，为保证第一磁力结构3与对应的铁磁性图形4之间吸引力足够将铁磁性图形4与承载基台2固定，可选地，铁磁性图形的厚度大于或等于5nm。
需要说明的是，本实施例中的衬底基板1包括玻璃基板。
可选地，该磁场发生装置为电磁铁构成，即每个第一磁力结构3均可以为一个独立的电磁铁，通过控制各电磁铁输出的磁场强度，从而可以控制各电磁铁与对应的铁磁性图形4之间的吸引力。
在实际蒸镀过程中，待处理基板在其自身重力的影响下，其中间位置会产生下凸。此时，可以通过增加对应于待处理基板中间位置 的电磁铁，以增加其与位于待处理基板中间位置的铁磁性图形4之间的吸引力，从而可有效的解决待处理基板中间位置下凸的问题。当然，本领域技术人员应该知晓的是，可以根据待处理基板在蒸镀过程中的实际情况，对各电磁铁输出的磁场强度进行相应的调整，以保证待处理基板一直处于平整状态。
本实施例中，可选地，铁磁性图形4的形状为矩形，铁磁性图形4与像素区域一一对应，铁磁性图形4位于对应的像素区域的中间位置。需要说明的是，本实施例中可通过溅射、电子束蒸镀等方式一次性形成上述铁磁性图形4，或者通过成膜、曝光、刻蚀、显影等工艺形成上述铁磁性图形4。
可选地，全部铁磁性图形4通过金属引线7电连接。此时，铁磁性图形4之间形成了回路，从而可有效的去除附着在待处理基板上的静电。
需要说明的是，对应于图2所示情况，为保证磁场发生装置与各磁性图形之间的作用力足以能构将待处理基板固定在承载基台2的下方，在图2所示方案中，铁磁性图形4的厚度需要大于或等于5nm。此外。为消除铁磁性图形4对成品的显示装置的出光亮度的影响，则在完成蒸镀工艺之后，可通过刻蚀工艺将位于衬底基板1背面的铁磁性图形4去除。
此外，与待处理基板类似的是，蒸镀过程中所使用的金属掩膜版6在其自身重力、温度等因素影响下，该金属掩膜版6也会产生相应的形变。为解决上述技术问题，本实施例中，在承载基台2的背面且对应待处理基板的非像素区域设置有多个第二磁力结构5，第二磁力结构5用于与蒸镀过程中所使用的金属掩膜版6之间产生作用力。通过调整各第二磁力结构5输出的磁场强度的大小，可有效的控制掩膜版6的形变。
在本实施例中，该固定装置除了包括上述步骤101外，还包括：
步骤102：第二磁力结构5产生磁场，以使蒸镀过程中所使用的掩膜版6在第二磁力结构5产生的磁场作用下与对应的第二磁力结构5之间彼此趋近。
需要说明的是，如图2所示，由于第一磁力结构3位于像素区域，第二磁力结构5位于非像素区域，因此第一磁力结构3与第二磁力结构5之间不会产生干扰。
图4为本发明实施例一中待处理基板与承载基台的第二种固定方案的示意图，如图4所示，与上述图2中不同的是，图4中的待处理基板还包括应用于柔性显示装置中的柔性基板。具体地，在显示器件与衬底基板1之间设置有柔性衬底9，柔性衬底9中混合有粉状的铁磁性材料；磁场发生装置包括多个第一磁力结构3，第一磁力结构3与待处理基板的像素区域对应设置。柔性衬底的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜。
需要说明的是，衬底基板1和柔性衬底9之间还可以设置有牺牲层8。在加工工艺完成后，通过特定工艺将牺牲层8去除，从而使得柔性衬底9与衬底基板1分离。
在图4中，各第一磁力结构3可以与混合有粉状的柔性衬底9之间产生作用力，从而使得衬底基板1的背面与承载基台2的正面接触且固定，从而达到将衬底基板1固定在正在基台下方的目的。当然，图4中每个第一磁力结构3也可以为一个独立的电磁铁，通过对各电磁铁输出的磁场强度进行相应的调整，以保证待处理基板一直处于平整状态。
需要说明的是，在图4中由于是将粉状的铁磁性材料混合在聚酰亚胺、聚碳酸酯或聚醚砜中，因此不会对柔性衬底9的透光率造成较大影响。
当然，在图4的技术方案中也可以在承载基台2的背面对应非像素区域设置图2中的第二磁力结构5，以对蒸镀过程中所使用的掩膜版6的形变进行控制，具体原理可参见前述相应内容，此处不再赘述。
图5为本发明实施例一中待处理基板与承载基台的第三种固定方案的示意图，如图5所示，显示器件与衬底基板1之间设置有柔性衬底9，柔性衬底9的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜；铁磁性材料位于柔性衬底9上远离衬底基板1的一侧(铁磁性材料与显 示器件之间有一层绝缘层)，铁磁性材料构成多个铁磁性图形4，铁磁性图形4位于待处理基板的像素区域；磁场发生装置包括多个第一磁力结构3，每个第一磁力结构3与至少一个铁磁性图形4对应。
在图5中，通过第一磁力结构3与对应的铁磁性图形4之间的吸引力，可以使得铁磁性图形4与承载基台2的正面接触且固定，从而达到将衬底基板1固定在承载基台2下方的目的。当然，图5中每个第一磁力结构3也可以为一个独立的电磁铁，通过对各电磁铁输出的磁场强度进行相应的调整，以保证待处理基板一直处于平整状态。
需要说明的是，在图5中，由于铁磁性图形4是无法通过刻蚀工艺得以去除，因此该铁磁性图形4会降低成品的柔性显示装置出光量。因此，为降低铁磁性图形4对成品显示装置的出光量的影响，则需要将铁磁性图形4的膜厚设计的较薄。但是，铁磁性图形4的膜厚过薄，则会导致第一磁力结构3与铁磁性图形4之间的作用力减小，从而可能会出现待处理基板无法固定在承载基台2下方。基于上述考虑，在图5所示方案中，铁磁性图形4的厚度为5nm～1mm。
当然，在图5的技术方案中也可以在承载基台2的背面对应非像素区域设置图2中的第二磁力结构5，以对蒸镀过程中所使用的掩膜版6的形变进行控制，具体原理可参见前述相应内容，此处不再赘述。
需要说明的是，在图5的技术方案中衬底基板1和柔性衬底9之间还可以设置有牺牲层8(在加工工艺完成后，通过特定工艺将牺牲层8去除，从而使得柔性衬底9与衬底基板1分离)。
图6为本发明实施例一中待处理基板与承载基台的第四种固定方案的示意图，图7为图6中第一磁力结构、铁磁性图形和掩膜版的关系示意图，如图6和图7所示，该显示器件包括：薄膜晶体管10和形成于薄膜晶体管10上且远离衬底基板1的一侧的绝缘层11，铁磁性材料位于绝缘层11上且远离衬底基板1的一侧，铁磁性材料构成多个铁磁性图形4，铁磁性图形4位于待处理基板的非像素区域，磁场发生装置包括多个第一磁力结构3，每个第一磁力结构3与至少一个铁磁性图形4对应。
在图6中，为保证第一磁力结构3与对应的铁磁性图形4之间吸引力足够将铁磁性图形4与承载基台2固定，可选地，铁磁性图形的厚度大于或等于5nm。
与图2、图4和图5所示方案不同的是，在图6所示方案中，铁磁性图形4仅位于待处理基板的非像素区域内。
在图6所示方案中，铁磁性图形4的宽度小于在蒸镀过程中所使用的掩膜版6的线宽。与此同时，可将第一磁力结构3设置的尺寸设置的相对较大。以图7所示为例，铁磁性图形4在掩膜版6上对应的正投影覆盖掩膜版6上的区域A，掩膜版6上的区域B没有被铁磁性图形4的投影所覆盖。则此时第一磁力结构3不仅可以与铁磁性图形4之间产生作用力F1，而且还可以与掩膜版6上对应区域B的部分产生作用力F2。因此，在图6所示方案中，仅仅通过第一磁力结构3便可实现对待处理基板进行固定，以及蒸镀过程中所使用的掩膜版6的形变进行控制的效果。
需要说明的是，当然图6所示方案中也可像前述三种方案中一样，利用第一磁力结构3来实现与待处理基板进行固定，同时利用第二磁力结构5来实现对掩膜版6的形变进行调整，此时第一磁力结构3与区域A对应设置，第二磁力结构5与区域B对应设置。
另外，图6所示方案中的磁场发生装置也可以为电磁铁。
本领域技术人员应该知晓的是，凡是通过在承载基台2上设置磁场发生装置，同时在衬底基板1的正面或背面设置铁磁性材料，且利用铁磁性材料与磁场发生装置之间的磁场作用，以使得承载基台2与衬底基板1进行固定的技术方案，均应该属于本申请的保护范围。而上述四种方案的描述仅起到示例性作用，并不会对本申请的技术方案产生限制，对于其他方案本申请不再一一列举。
在本实施例中，铁磁性材料可为铁、钴、镍中的至少一种。
实施例二
本发明实施例二还提供了一种蒸镀方法，包括：采用上述实施例一中的将衬底基板固定在承载基台的下方；对待处理基板进行蒸镀工艺。其中将衬底基板固定在承载基台的下方的步骤可参见上述实施 例一中相应的内容，此处不再赘述。
本发明实施例提供了一种固定装置和蒸镀方法，在将衬底基板固定在承载基台的下方的过程中，通过在衬底基板的正面或背面预先设置铁磁性材料，然后在承载基台的背面对应铁磁性材料的位置设置有磁场发生装置，磁场发生装置产生磁场，以使得磁场发生装置与铁磁性材料之间彼此趋近，从而将待处理基板固定在承载基台的下方。由于磁场发生装置与铁磁性材料之间的吸引力不会随着工艺时间变长而减弱，因此可有效的避免待处理基板在蒸镀过程中发生掉落、破裂等问题。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (18)

  1. 一种固定装置，用于在蒸镀过程中将待处理基板固定在承载基台的下方，其特征在于，所述待处理基板包括：衬底基板，所述衬底基板的正面用于形成显示器件，所述衬底基板的正面或背面形成有铁磁性材料，承载基台的背面对应所述铁磁性材料的位置设置有磁场发生装置；
    其中所述磁场发生装置产生磁场，以供所述铁磁性材料在所述磁场发生装置产生的磁场作用下与所述磁场发生装置彼此趋近，将所述承载基台的正面与所述衬底基板的背面固定。
  2. 根据权利要求1所述的固定装置，其特征在于，所述铁磁性材料位于所述衬底基板的背面，且构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的像素区域内；
    所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
  3. 根据权利要求2所述的固定装置，其特征在于，所述铁磁性图形的厚度大于或等于5nm。
  4. 根据权利要求2所述的固定装置，其特征在于，所述铁磁性图形的形状为矩形。
  5. 根据权利要求2所述的固定装置，其特征在于，所述铁磁性图形与所述像素区域一一对应，所述铁磁性图形位于对应的所述像素区域的中间位置。
  6. 根据权利要求2所述的固定装置，其特征在于，全部所述铁磁性图形电连接。
  7. 根据权利要求1所述的固定装置，其特征在于，所述待处理 基板还包括：设置于所述显示器件与所述衬底基板之间的柔性衬底，所述柔性衬底中混合有粉状的铁磁性材料；
    所述磁场发生装置包括多个第一磁力结构，所述第一磁力结构与所述待处理基板的像素区域对应设置。
  8. 根据权利要求7所述的固定装置，其特征在于，所述柔性衬底的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜。
  9. 根据权利要求1所述的固定装置，其特征在于，所述待处理基板还包括：设置于所述显示器件与所述衬底基板之间的柔性衬底；
    所述铁磁性材料位于所述柔性衬底上远离所述衬底基板的一侧，所述铁磁性材料构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的像素区域；
    所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
  10. 根据权利要求9所述的固定装置，其特征在于，所述柔性衬底的材料包括：聚酰亚胺、聚碳酸酯或聚醚砜。
  11. 根据权利要求7所述的固定装置，其特征在于，所述铁磁性图形的厚度为5nm～1mm。
  12. 根据权利要求2-11中任一所述的固定装置，其特征在于，所述承载基台的背面对应所述待处理基板的非像素区域设置有多个第二磁力结构；
    所述固定装置还包括：
    所述第二磁力结构产生磁场，以供蒸镀过程中所使用的掩膜版在所述第二磁力结构产生的磁场作用下与所述磁场发生装置彼此趋近。
  13. 根据权利要求1所述的固定装置，其特征在于，所述显示器件包括：薄膜晶体管和形成于所述薄膜晶体管上且远离所述衬底基板的一侧的绝缘层，所述铁磁性材料位于所述绝缘层上且远离所述衬底基板的一侧；
    所述铁磁性材料构成多个铁磁性图形，所述铁磁性图形位于所述待处理基板的非像素区域；
    所述磁场发生装置包括多个第一磁力结构，每个所述第一磁力结构与至少一个所述铁磁性图形对应。
  14. 根据权利要求1所述的固定装置，其特征在于，所述铁磁性图形的厚度大于或等于5nm。
  15. 根据权利要求13所述的固定装置，其特征在于，所述铁磁性图形的宽度小于在蒸镀过程中所使用的掩膜版的线宽。
  16. 根据权利要求1所述的固定装置，其特征在于，所述铁磁性材料为铁、钴、镍中的至少一种。
  17. 根据权利要求1所述的固定装置，其特征在于，所述磁场发生装置为电磁铁。
  18. 一种蒸镀方法，其特征在于，包括：
    采用上述权利要求1-17中任一所述的固定装置将所述承载基台的正面与所述衬底基板的背面固定。
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