WO2017012357A1 - 一种卡托及其制备方法、移动终端 - Google Patents

一种卡托及其制备方法、移动终端 Download PDF

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Publication number
WO2017012357A1
WO2017012357A1 PCT/CN2016/076363 CN2016076363W WO2017012357A1 WO 2017012357 A1 WO2017012357 A1 WO 2017012357A1 CN 2016076363 W CN2016076363 W CN 2016076363W WO 2017012357 A1 WO2017012357 A1 WO 2017012357A1
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WO
WIPO (PCT)
Prior art keywords
metal
insulating layer
layer
card
insulating
Prior art date
Application number
PCT/CN2016/076363
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English (en)
French (fr)
Inventor
蔡明�
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to BR112018000454-5A priority Critical patent/BR112018000454B1/pt
Priority to EP16827048.6A priority patent/EP3319181B1/en
Publication of WO2017012357A1 publication Critical patent/WO2017012357A1/zh
Priority to US15/872,989 priority patent/US10348013B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/46—Bases; Cases
    • H01R13/516—Means for holding or embracing insulating body, e.g. casing, hoods
    • H01R13/518—Means for holding or embracing insulating body, e.g. casing, hoods for holding or embracing several coupling parts, e.g. frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/62—Means for facilitating engagement or disengagement of coupling parts or for holding them in engagement
    • H01R13/629—Additional means for facilitating engagement or disengagement of coupling parts, e.g. aligning or guiding means, levers, gas pressure electrical locking indicators, manufacturing tolerances
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3816—Mechanical arrangements for accommodating identification devices, e.g. cards or chips; with connectors for programming identification devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3816—Mechanical arrangements for accommodating identification devices, e.g. cards or chips; with connectors for programming identification devices
    • H04B1/3818—Arrangements for facilitating insertion or removal of identification devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets

Definitions

  • the present invention relates to the technical field of communication devices, and in particular, to a card tray, a preparation method thereof, and a mobile terminal.
  • the surface insulation coating of the Cato (or called the card slot) is destroyed, so that the Cato has a conductive phenomenon.
  • the communication signal of the mobile phone is affected, and the signal is bad or the mobile phone does not recognize the SIM card.
  • the invention provides a card holder, a preparation method thereof and a mobile terminal, which are used for improving the insulation effect of the card tray, thereby improving the effect of the identification card of the mobile terminal.
  • a card holder including a card base, a first insulating layer disposed on the card base, a second insulating layer covering the first insulating layer, and The hardness of the first insulating layer is higher than that of the second insulating layer.
  • the first insulating layer is an insulating coating comprising a diamond-like material.
  • the first insulating layer includes: a metal underlayer disposed on the card base; An intermediate layer on the metal base layer; and an insulating coating disposed on the intermediate layer, wherein, the intermediate layer is a mixed layer of a metal and a compound thereof; the insulating coating is a mixed layer of a metal and a compound thereof, a diamond-like material.
  • the content of the metal and its compound in the insulating coating is more near the position of the intermediate layer; The more the diamond-like material content is from the position of the intermediate layer, the more the content.
  • the metal compound in the mixed layer of the metal and the compound thereof may be: metal oxide, metal nitride, metal carbonization a substance, a metal sulfide, a metal boride, a metal oxynitride, a metal carbonitride or a metal oxycarbon compound.
  • the material of the card base includes at least one of the following materials:
  • Metal materials metal alloy materials, metal matrix composite materials, and inorganic non-metal materials.
  • the first insulating layer has a thickness of between 0.3 and 7 micrometers.
  • the second insulating layer has a thickness of between 3 and 100 micrometers.
  • the first insulating layer has a thickness of between 0.3 and 3 micrometers.
  • the second insulating layer has a thickness of between 10 and 25 micrometers.
  • the first possible aspect of the first aspect, the first possible implementation of the first aspect, the second possible implementation of the first aspect, the third possible implementation of the first aspect, and the fourth possible aspect of the first aspect Implementation of the first aspect, a fifth possible implementation of the first aspect, a sixth possible implementation of the first aspect, a seventh possible implementation of the first aspect, and an eighth possible implementation of the first aspect
  • the ninth possible implementation manner of the first aspect, in the tenth possible implementation manner, the second insulating layer is a polymer coating.
  • the material of the second insulating layer comprises at least one of the following materials:
  • a method of preparing a cartridge comprising the steps of:
  • a second insulating layer is formed on the formed first insulating layer, and the formed first insulating layer has a higher hardness than the second insulating layer.
  • the forming the first insulating layer on the card base body specifically includes:
  • An insulating coating is formed on the intermediate layer; wherein the intermediate layer is a mixed layer of a metal and a compound thereof; the insulating coating is a mixed layer of a metal and a compound thereof, a diamond-like material.
  • the content of the metal in the intermediate layer gradually decreases as the thickness of the intermediate layer increases, and the metal compound in the intermediate layer The content gradually increases as the thickness of the intermediate layer increases.
  • the content of the metal and the compound thereof in the insulating coating is gradually decreased as the thickness of the insulating coating is increased.
  • the content of the diamond-like film in the insulating coating gradually increases as the thickness of the insulating coating increases.
  • the method further includes performing ion cleaning in a vacuum state of the card base after forming the first insulating layer on the card base.
  • the method further includes: performing a high temperature baking on the second insulating layer after forming the second insulating layer on the formed first insulating layer .
  • the first insulating layer is formed to have a thickness of between 0.3 and 7 micrometers, and the second insulating layer is formed to have a thickness of between 3 and 100 micrometers.
  • a mobile terminal includes a mobile terminal body, a card holder disposed in the body of the mobile terminal, and a card loaded in the card tray, wherein the card tray is the above Cato as described in any one of the above.
  • the method for preparing the card tray provided by the second aspect, the mobile terminal provided by the third aspect is protected by providing two layers of insulating coating on the card base body, and the hardness of the first insulating layer is higher than that of the second insulating layer when disposed, and the burr or sharp portion on the card pierces the second insulating layer When the burr or the sharp portion is blocked by the first insulating layer, the burr is prevented from scratching the insulating coating on the card base.
  • the insulation performance of the card tray is effectively improved, thereby improving the effect of the identification card of the mobile terminal, effectively reducing the situation that the card holder is not able to recognize the card because the insulation coating of the card tray is broken and the card tray is electrically conductive.
  • FIG. 1 is a schematic structural diagram of a card tray according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a first insulating layer in a card tray according to an embodiment of the present invention
  • FIG. 3 is a flowchart of a method for preparing a card tray according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a mobile terminal according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a card tray provided by an embodiment of the present invention.
  • the embodiment of the present invention provides a card holder 10 including a card base 11 , a first insulating layer 12 disposed on the card base 11 , and a second insulating layer 13 covering the first insulating layer 12 .
  • the hardness of the first insulating layer 12 is higher than that of the second insulating layer 13.
  • the card tray substrate 11 is protected by providing two insulating coating layers 123 on the card base body 11, and the hardness of the first insulating layer 12 is higher than that of the second insulating layer 13 when disposed, on the card.
  • the second insulating layer 13 can sacrifice a part of the burr and the sharp corner portion of the self-coating consumption card, and the remaining burrs and sharp corner portions will be greatly reduced, and the remaining When the burr or the sharp corner continues to pierce the first insulating layer 12, the insulating coating integrity of the first insulating layer 12 can be maximized, and the first insulating layer 12 is prevented from being damaged to make the card 10 conductive, thereby avoiding The mobile terminal cannot recognize the card.
  • the card tray 10 provided in this embodiment is a tray for any SIM card, a tray for loading an SD card, or other trays required for cards for signal transmission, number identification, storage, etc., such as a smart phone. Smart watches, smart bracelets, tablets, or other forms of wearable devices.
  • the card base 11 of the card tray 10 provided in this embodiment may be made of different materials.
  • the material of the card base 11 includes at least one of the following materials: a metal material, a metal alloy material, and a metal matrix composite.
  • the Cato 10 is a stainless steel substrate, and may be other steel materials and aluminum alloys, magnesium alloys, titanium alloys, amorphous alloys, zinc alloys, copper alloys, metal matrix composite materials, etc.; Inorganic non-metallic substrates such as ceramics, glass, sapphire, glass-ceramics, spinel, etc.; can be prepared according to different needs of different materials.
  • the first insulating layer 12 and the second insulating layer 13 formed on the card base 11 are located at a position where the card is placed on the card base 11 . That is, the first insulating layer 12 and the second insulating layer 13 are formed on the sidewall of the card slot for accommodating the card on the card tray 10, thereby avoiding the case where the insulating layer on the card tray 10 is scratched when the card contacts the card tray 10. Appears to improve the card to cut the card 10, resulting in a card
  • the tray 10 is electrically conductive, and the mobile terminal cannot recognize the status of the card information.
  • the insulating layer provided in this embodiment needs to have a certain thickness.
  • the thickness of the first insulating layer 12 is between 0.3 and 7 micrometers
  • the thickness of the second insulating layer 13 is between 3 and 100 micrometers.
  • the thickness of the first insulating layer 12 may be any thickness between 0.3 ⁇ m, 1 ⁇ m, 2 ⁇ m, 3 ⁇ m, 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, etc., between 0.3 and 7 ⁇ m.
  • the thickness of the second insulating layer 13 may be any of 3 to 100 micrometers, such as 3 micrometers, 10 micrometers, 20 micrometers, 30 micrometers, 40 micrometers, 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, etc.
  • the thickness of the first insulating layer 12 is between 0.3 and 3 microns
  • the thickness of the second insulating layer 13 is between 10 and 25 microns, such as:
  • the thickness of an insulating layer 12 is 0.3 ⁇ m, 0.5 ⁇ m, 1 ⁇ m, 1.5 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, etc., and any thickness between 0.3 and 3 ⁇ m
  • the thickness of the second insulating layer 13 is 10 ⁇ m. Any thickness between 10 and 25 microns, such as 15 micrometers, 20 micrometers, and 25 micrometers.
  • the hardness of the first insulating layer 12 is higher than that of the second insulating layer 13 when the insulating layer on the card base 11 is prepared.
  • the pencil hardness of the first insulating layer 12 is generally much greater than about 9H, and the pencil hardness of the second insulating layer 13 is about 3H, so that the first insulating layer 12 can effectively prevent the card from scratching the card tray 10.
  • FIG. 2 shows the structure of the first insulating layer 12 in the structure of the cartridge 10.
  • the first insulating layer 12 is an insulating coating 123 containing a diamond-like material.
  • a DLC (Diamond-like Carbon) film layer has a high hardness, and the DLC material ensures that the hardness of the first insulating layer 12 is much higher than that of the second insulating layer 13.
  • the first insulating layer 12 includes at least three layers.
  • the first insulating layer 12 includes: a metal underlayer 121 disposed on the card base 11; an intermediate layer 122 disposed on the metal underlayer 121; and an insulating coating 123 disposed on the intermediate layer 122, wherein the intermediate layer 122 is a mixed layer of a metal and a compound thereof; the insulating coating 123 is a mixed layer of a metal and a compound thereof, a diamond-like material.
  • the metal compound in the mixed layer of the metal and its compound may be: metal oxide, metal nitride, metal carbide, metal sulfide, metal boride coating, metal oxynitride, metal carbon A nitrogen compound or a metal carbon oxynitride.
  • Pure metal and compound The ratio of the weight of the compound can be adjusted from 0% to 100%, and the ratio of the pure metal weight can be adjusted from 100% to 0%, from 100%. % begins; specifically, the intermediate layer 122 starts from the side toward the metal base layer 121, and faces away from the metal base layer 121, the content of the pure metal gradually decreases, and the content of the metal compound gradually increases. The two become a corresponding incremental change. That is, the side of the intermediate layer 122 facing the metal base layer 121 is a pure metal, and the side facing the insulating coating layer 123 is a pure metal compound.
  • the insulating coating 123 may be a mixed coating of the material of the intermediate layer 122 and DLC (ie, metal and its compound, DLC material), or a metal compound of only the second metal layer may be mixed with the DLC material. Coating. And the DLC and the mixed coating can be adjusted in an unrestricted ratio, and the DLC weight percentage can be adjusted from 0% to 100%, starting from 0%, up to 100%; the weight percentage of the metal compound can be from 100% to 0. % adjustable, starting from 100%, up to 0%.
  • the content of the metal and its compound in the insulating coating 123 is more the content of the intermediate layer 122; the more the content of the diamond-like material is, the more the content is from the position of the intermediate layer 122. Further, in the insulating coating layer 123 formed, the side of the insulating coating layer 123 facing the intermediate layer 122 is a pure metal compound layer, and the side facing away from the intermediate layer 122 is a pure DLC film.
  • the first insulating layer 12 is provided with a DLC film.
  • the DLC is not easily scratched, the sharp corners and burrs of the SIM card can puncture the DLC film under the pressure of the human hand; therefore, the card tray 10 provided in this embodiment is in the first
  • a second insulating layer 13 is added to an insulating layer 12.
  • the second insulating layer 13 is a polymer coating.
  • the material of the second insulating layer 13 includes at least one of the following materials: a polytetrafluoroethylene coating, a paint coating, and an ink coating.
  • it may be any polymer coating or a coating doped with a polymer and other inorganic substances; or a composite superposition coating of the above coating.
  • the ratio of each component is not limited, and mixing in any ratio may be employed.
  • high temperature treatment is required.
  • the high temperature treatment temperature of polytetrafluoroethylene is 160-320 ° C, and the time is 15 to 60 min;
  • the processing temperature of ordinary ink or paint is 50-200 ° C, and the time is 15 ⁇ . 120min;
  • the above coatings can be superposed and superimposed, and the corresponding baking treatment should be carried out after each spraying. For example, single-bake single-baked, spray once for one time; or double-spray double-bake, spray once for one time, then spray once for another time; or more layers of superposition.
  • the card tray 10 provided in this embodiment can effectively prevent the sharp or burr on the card 10 from severing the insulation layer on the card 10 by using two layers of insulating layers with different hardnesses, thereby improving the card tray.
  • the insulation performance of 10 avoids the occurrence of the situation where the card will cut the card tray 10 and the mobile terminal cannot recognize the card information.
  • the embodiment of the invention further provides a method for preparing the card tray 10, the method comprising:
  • a second insulating layer is formed on the formed first insulating layer, and the formed first insulating layer has a higher hardness than the second insulating layer.
  • the sharp or burr on the card 10 is effectively prevented from snagging the insulating layer on the card 10, thereby improving the insulation of the card tray 10.
  • the performance avoids the occurrence that the card will cut the card tray 10 and the mobile terminal cannot recognize the card information.
  • FIG. 3 is a flow chart showing a method for preparing a card tray according to an embodiment of the present invention.
  • the card tray is the card tray described in the above specific embodiment, and the specific preparation method thereof comprises:
  • the Cato can be made of different materials, such as a Cato substrate made of a metal material, a metal alloy material, a metal matrix composite material or an inorganic non-metal material.
  • the Cato is a stainless steel substrate, and may be other steel materials and aluminum alloys, magnesium alloys, titanium alloys, amorphous alloys, zinc alloys, copper alloys, metal matrix composite materials, etc.; or ceramic or other inorganic materials.
  • Non-metallic substrates such as ceramics, glass, sapphire, glass-ceramics, spinels, etc.; and in the preparation, different preparation methods can be selected according to the materials used in the Cato, such as: metal injection molding process, vacuum die-casting, Different processes such as ordinary die casting are formed, and the above process is a relatively mature process in the prior art, and will not be described in detail herein.
  • step 002 the card tray substrate is subjected to ion cleaning in a vacuum state.
  • the surface of the Cato substrate is degreased, degreased, ultrasonically purified, and then dried, loaded on the relevant tool into the PVD cavity; and in accordance with the set vacuum conditions and negative bias conditions Row ion cleaning.
  • Step 003 forming a metal underlayer on the card base.
  • the metal underlayer is prepared from a metal material that can be bonded to the Cata matrix, and the metal underlying metal should be well adhered to the Cato substrate.
  • electroplating PVD, CVD and the like may be used, and the above process is a relatively mature process in the prior art, and will not be described in detail herein.
  • Step 004 forming an intermediate layer on the metal underlayer.
  • the intermediate layer contains a metal and a compound thereof.
  • the metal compound in the mixture of the metal and the compound thereof may be: a metal oxide, a metal nitride, a metal carbide, a metal sulfide, a metal boride coating, a metal oxynitride, a metal carbonitride or a metal oxycarbon. Nitrogen compounds.
  • the pure metal and the compound can be adjusted without limitation.
  • the weight percentage of the compound can be from 0% to 100%, adjustable from 0%, and the proportion of pure metal weight can be from 100% to 0%.
  • the adjustment starts from 100%; specifically, the content of the metal in the intermediate layer gradually decreases as the thickness of the intermediate layer increases, and the content of the metal compound in the intermediate layer gradually increases as the thickness of the intermediate layer increases.
  • the metal and its compounds change in a corresponding change. That is, the side of the intermediate layer facing the metal underlayer is a pure metal, and the side facing the insulating coating is a pure metal compound.
  • electroplating, PVD, CVD and the like may be used, and the above process is a relatively mature process in the prior art, and will not be described in detail herein.
  • Step 005 forming an insulating coating on the intermediate layer.
  • the insulating coating may be a mixed coating of an intermediate layer material and a DLC (ie, a metal and a compound thereof, a DLC material), or a coating in which only a metal compound of the second metal layer is mixed with the DLC material.
  • the DLC and the mixed coating can be adjusted in an unrestricted ratio, and the DLC weight percentage can be adjusted from 0% to 100%, starting from 0%, up to 100%; the weight percentage of the metal compound can be from 100% to 0. % adjustable, starting from 100%, up to 0%.
  • the content of the metal and its compound in the insulating coating gradually decreases as the thickness of the insulating coating increases, and the content of the diamond-like film in the insulating coating gradually increases as the thickness of the insulating coating increases.
  • the side of the insulating coating facing the intermediate layer is a pure metal compound layer, and the side facing away from the intermediate layer is a pure DLC film.
  • electroplating, PVD, CVD and the like may be used, and the above process is a relatively mature process in the prior art, and will not be described in detail herein.
  • the formed metal underlayer, the intermediate layer and the insulating coating form a first insulating layer, and the first insulating layer is formed to have a thickness of between 0.3 and 7 micrometers.
  • Step 006 forming a second insulating layer on the insulating coating.
  • the formed second insulating layer has a thickness of between 3 and 100 micrometers.
  • the second insulating layer is a polymer coating.
  • the second insulating layer is a polytetrafluoroethylene coating, a paint coating or an ink coating, and may be any polymer coating or a coating doped with a polymer and other inorganic substances; or the above coating Composite overlay coating.
  • the ratio of each component is not limited, and mixing in any ratio may be employed.
  • the preparation method of the second insulating layer is not limited, and achievable, any method of spraying may be used.
  • Step 007 performing high temperature baking on the second insulating layer.
  • the second insulating layer is prepared by the method described in the step 006, after the coating treatment, high temperature treatment is required, and generally the high temperature treatment temperature of the polytetrafluoroethylene is 160 to 320 ° C, and the time is 15 to 60 min.
  • Ordinary ink or paint processing temperature is 50 ⁇ 200 ° C, the time is 15 ⁇ 120min; the above coatings can be superimposed, and each time after spraying, the corresponding baking treatment. For example, single-bake single-baked, spray once for one time; or double-spray double-bake, spray once for one time, then spray once for another time; or more layers of superposition.
  • Nano SIM card holder As an example.
  • the material of the card base body is 17-4 stainless steel, and the specific preparation method is as follows:
  • Step 1 forming a card base by a metal injection molding process
  • Step 2 preparing a DLC film in a designated area of the formed Cato substrate
  • This embodiment is a magnetron sputtering target source, vacuuming the PVD furnace cavity, the vacuum is better than 6.5 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum between 0.1 and 1 Pa, and the negative is turned on. Ion cleaning the stainless steel substrate with a bias voltage of 800V;
  • the DLC surface resistance is greater than 20M ⁇ (20 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 20 million ohms or more. After the micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot to carry out the real machine plug-in experiment, repeated cycles, after 60 experiments, the phone can still recognize the SIM card, the signal is good.
  • Nano SIM card holder As an example, wherein the card base body is a card base body made of an amorphous alloy material.
  • the specific preparation method is as follows:
  • the specific preparation method is:
  • Step 1 Degreasing, degreasing, ultrasonic pure water cleaning, and then drying the surface of the Cato substrate, loading on the relevant tool to enter the PVD furnace cavity;
  • Step 2 This embodiment is a magnetron sputtering target source, vacuuming the PVD furnace cavity, the vacuum degree is better than 6 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum degree between 0.1 and 0.8 Pa, Turn on the negative bias voltage of 700V to perform ion cleaning on the substrate;
  • Step 3 Turn on the acetylene gas, turn on the magnetron sputtering chromium target, and successively deposit the pure bond with the substrate. a chromium layer; then preparing a mixed layer of CrC and Cr by adjusting the power of the chromium target and the gas flow; then opening the graphite target, gradually reducing the power of the chromium target until 0, to obtain a mixed layer of CrC and DLC; and then leaving only the graphite target And acetylene, argon, pure DLC film layer preparation; PVD film layer total thickness of 2.6 microns;
  • Step 4 Spray a Teflon coating on the DLC film to a thickness of 22 ⁇ m; after the first spraying, bake at a high temperature of 160 ° C for 30 minutes, and after the second spraying, bake at a high temperature of 160 ° C. minute.
  • the DLC surface resistance is greater than 2M ⁇ (2 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 20 million ohms or more. After the micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot for mobile phone real-time plug-in experiment, repeated cycles, after 46 experiments, the phone can still recognize the SIM card, the signal is good.
  • Nano SIM card holder As an example, wherein the card base body is a card base body made of a zinc alloy material.
  • the specific preparation method is as follows:
  • the specific preparation method is as follows:
  • Step 1 Degreasing, degreasing, ultrasonic pure water cleaning, and then drying the surface of the Cato substrate, loading on the relevant tool to enter the PVD furnace cavity;
  • Step 2 This embodiment is a magnetron sputtering target source, and the PVD furnace cavity is evacuated, and the vacuum degree is better than 5 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum degree between 0.3 and 0.8 Pa. Turn on a negative bias voltage of 500V to perform ion cleaning on the substrate;
  • Step 3 Turn on the acetylene gas, turn on the magnetron sputtering tungsten target, deposit the pure tungsten layer combined with the substrate, and then prepare the WC and W mixed layer by adjusting the tungsten target power and gas flow; then turn on the graphite target and gradually reduce The small W target power is up to 0, and a mixed layer of WC and DLC is prepared; then only the graphite target and acetylene and argon are left for pure DLC film layer preparation; the total thickness of the PVD film layer is 2.9 micrometers;
  • Step 4 Spray a Teflon coating on the DLC film to a thickness of 20 microns; after spraying, bake at a high temperature of 320 ° C for 30 minutes.
  • the DLC surface resistance is greater than 2M ⁇ (2 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 20 million ohms or more. After the Micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot for mobile phone real-time plug-in experiment, repeated cycles, after 52 experiments, the phone can still recognize the SIM card, the signal is good.
  • Step 1 Degreasing, degreasing, ultrasonic pure water cleaning, and then drying the surface of the Cato substrate, loading on the relevant tool to enter the PVD furnace cavity;
  • Step 2 This embodiment is an arc ion plating target source, vacuuming the PVD furnace cavity, the vacuum degree is better than 6.5 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum degree between 0.4 and 0.9 Pa, and the vacuum is maintained. Negative bias 800V, ion cleaning the substrate;
  • Step 3 turn on the oxygen gas, turn on the aluminum target, and successively deposit a pure aluminum layer combined with the substrate; then prepare the mixed layer of alumina and aluminum by adjusting the power and flow rate of the aluminum target; then turn on the graphite target to gradually reduce the aluminum target
  • the power is up to 0, the oxygen flow rate is reduced to 0, and a mixed layer of alumina and DLC is obtained; then only the graphite target and acetylene and argon are left for pure DLC film layer preparation; the total thickness of the PVD film layer is 2.5 micrometers;
  • Step 4 Spray a common paint coating on the DLC film to a thickness of 15 ⁇ m; after spraying, bake at a high temperature of 80 ° C for 40 minutes.
  • the DLC surface resistance is greater than 2M ⁇ (2 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 20 million ohms or more. After the Micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot for mobile phone real-time plug-in experiment, repeated cycles, after 45 experiments, the phone can still recognize the SIM card, the signal is good.
  • the card base body is a card base body made of an amorphous alloy.
  • the specific preparation method is as follows:
  • Step 1 Degreasing, degreasing, ultrasonic pure water cleaning, and then drying the surface of the Cato substrate, loading on the relevant tool to enter the PVD furnace cavity;
  • Step 2 This embodiment is an arc ion plating target source, vacuuming the PVD furnace cavity, the vacuum degree is better than 6.5 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum degree between 0.4 and 0.9 Pa, and the vacuum is maintained. Negative bias 800V, ion cleaning the substrate;
  • Step 3 turn on the nitrogen gas, turn on the titanium target, and successively deposit the pure titanium layer combined with the substrate; then prepare the TiN and Ti mixed layer by adjusting the aluminum target power and the gas flow rate; then turn on the graphite target to gradually reduce the titanium target power. Until 0, reduce the nitrogen flow rate until 0, to obtain a mixed layer of titanium nitride and DLC; then only the graphite target and acetylene, argon gas, pure DLC film layer preparation; PVD film layer thickness of 3 microns;
  • Step 4 Ordinary ink printing was performed on a DLC film to a thickness of 26 ⁇ m; after printing, it was baked at a high temperature of 80 ° C for 40 minutes.
  • the DLC surface resistance is greater than 20M ⁇ (2 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 20 million ohms or more. After the Micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot for mobile phone real-time plug-in experiment, repeated cycles, after 50 experiments, the phone can still recognize the SIM card, the signal is good.
  • the card holder of the Nano SIM card is taken as an example, wherein the material of the card base body is 17-4 stainless steel, and the specific preparation method is as follows:
  • Step 1 forming a card base by a metal injection molding process
  • Step 2 preparing a DLC film in a designated area of the formed Cato substrate
  • This embodiment is a magnetron sputtering target source, vacuuming the PVD furnace cavity, the vacuum is better than 6.5 ⁇ 10-3Pa; then argon gas is introduced to maintain the vacuum between 0.1 and 1 Pa, and the negative is turned on. Impregnation of 600V, ion cleaning of stainless steel substrate;
  • the DLC surface resistance is greater than 2M ⁇ (2 million ohms) with a multimeter. After spraying Teflon, the surface resistance can reach 2 million ohms or more. After the micro SIM card is cut into a Nano SIM card, the Nano SIM card is placed. Into the card slot to carry out the real machine plug-in experiment, repeated cycles, after 60 experiments, the phone can still recognize the SIM card, the signal is good.
  • FIG. 4 is a schematic structural diagram of a mobile terminal according to an embodiment of the present invention.
  • the embodiment of the present invention further provides a mobile terminal, which includes a mobile terminal body 20, a card holder 10 disposed in the mobile terminal body 20, and a card 30 mounted in the card tray 10, wherein the card
  • the tray 10 is the cartridge 10 described in any of the above.
  • the card tray substrate is protected by providing two layers of insulating coating on the card base, and the hardness of the first insulating layer is higher than that of the second insulating layer when disposed, and the burrs or sharp portions on the card are When the second insulating layer is pierced, the burr or the sharp portion can be blocked by the first insulating layer to prevent the burr from scratching the insulating coating on the card base.
  • the insulation performance of the card tray 10 is effectively improved, thereby improving the effect of the identification card of the mobile terminal.
  • the situation in which the card 10 is electrically conductive due to the breakage of the insulating coating of the card tray 10, thereby making it impossible for the mobile terminal to recognize the card, is effectively reduced.

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Abstract

一种卡托及其制备方法、移动终端。该卡托（10）包括卡托基体（11），设置在该卡托基体（11）上的第一绝缘层（12），覆盖在该第一绝缘层（12）的第二绝缘层（13），且该第一绝缘层（12）的硬度高于第二绝缘层（13）。在上述技术方案中，通过卡托基体（11）上设置了两层绝缘涂层保护卡托基体（11），并且在设置时第一绝缘层（12）的硬度高于第二绝缘层（13），在卡上的毛刺或尖锐部分在刺穿第二绝缘层（13）时，可以通过第一绝缘层（12）阻挡毛刺或尖锐部分，避免毛刺将卡托基体（11）上的绝缘涂层划破。有效地提高了卡托的绝缘性能，进而提高了移动终端识别卡的效果，有效减少了由于卡托的绝缘涂层被划破，卡托导电，从而使得移动终端不能识别卡的情况。

Description

一种卡托及其制备方法、移动终端
本申请要求在2015年07月17日提交中国专利局、申请号为201510425471.1、发明名称为“一种卡托及其制备方法、移动终端”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及到通信设备的技术领域，尤其涉及到一种卡托及其制备方法、移动终端。
背景技术
当前智能手机技术飞速发展，在影响智能手机信号的原因当中，有一种是因为卡托(或称之为卡槽)的表面绝缘涂层被破坏，从而使卡托出现导电现象，这种导电现象进而影响手机的通信信号，出现信号不良或者直接手机不识SIM卡的现象。
发明内容
本发明提供了一种卡托及其制备方法、移动终端，用以提高卡托的绝缘效果，从而改善移动终端的识别卡的效果。
第一方面，提供了一种卡托，该卡托包括卡托基体，设置在所述卡托基体上的第一绝缘层，覆盖在所述第一绝缘层的第二绝缘层，且所述第一绝缘层的硬度高于所述第二绝缘层。
结合上述第一方面，在第一种可能的实现方式中，所述第一绝缘层为包含类金刚石材料的绝缘涂层。
结合上述第一方面、第一方面的第一种可能的实现方式，在第二种可能的实现方式中，所述第一绝缘层包括：设置在所述卡托基体上的金属打底层；设置在所述金属打底层上的中间层；以及设置在所述中间层上的绝缘涂层， 其中，所述中间层为金属及其化合物的混合层；所述绝缘涂层为金属及其化合物、类金刚石材料的混合层。
结合上述第一方面的第二种可能的实现方式，在第三种可能的实现方式中，所述绝缘涂层中金属及其化合物的含量越靠近所述中间层的位置含量越多；所述类金刚石材料含量越远离所述中间层的位置含量越多。
结合上述第一方面的第二种可能的实现方式，在第四种可能的实现方式中，所述金属及其化合物的混合层中的金属化合物可以为：金属氧化物、金属氮化物、金属碳化物、金属硫化物、金属硼化物、金属氮氧化合物、金属碳氮化合物或金属碳氧氮化合物。
结合上述第一方面，在第五种可能的实现方式中，所述卡托基体的材质包括以下材质中的至少一种：
金属材料、金属合金材料、金属基复合材料以及无机非金属材料。
结合上述第一方面，在第六种可能的实现方式中，所述第一绝缘层的厚度介于0.3～7微米之间。
结合上述第一方面的第六种可能的实现方式，在第七种可能的实现方式中，所述第二绝缘层的厚度介于3～100微米之间。
结合上述第一方面，在第八种可能的实现方式中，所述第一绝缘层的厚度介于0.3～3微米之间。
结合上述第一方面的第八种可能的实现方式，在第九种可能的实现方式中，所述第二绝缘层的厚度介于10～25微米之间。
结合上述第一方面、第一方面的第一种可能的实现方式、第一方面的第二种可能的实现方式、第一方面的第三种可能的实现方式、第一方面的第四种可能的实现方式、第一方面的第五种可能的实现方式、第一方面的第六种可能的实现方式、第一方面的第七种可能的实现方式、第一方面的第八种可能的实现方式、第一方面的第九种可能的实现方式，在第十种可能的实现方式中，所述第二绝缘层为高分子类涂层。
结合上述第一方面的第十种可能的实现方式，在第十一种可能的实现方 式中，所述第二绝缘层的材质包括以下材质中的至少一种：
聚四氟乙烯涂层、油漆涂层以及油墨涂层。
第二方面，提供了一种卡托的制备方法，该方法包括以下步骤：
在卡托基体上形成第一绝缘层；
在形成的第一绝缘层上形成第二绝缘层，且形成的第一绝缘层的硬度高于第二绝缘层。
结合上述第二方面，在第一种可能的实现方式中，所述在卡托基体上形成第一绝缘层具体包括：
在所述卡托基体上形成金属打底层；
在所述金属打底层上形成中间层；
在所述中间层上形成绝缘涂层；其中，所述中间层为金属及其化合物的混合层；所述绝缘涂层为金属及其化合物、类金刚石材料的混合层。
结合上述第二方面的第一种可能的实现方式，在第二种可能的实现方式中，所述中间层中的金属的含量随着中间层厚度的增加逐渐降低，所述中间层中金属化合物的含量随着中间层厚度的增加含量逐渐增加。
结合上述第二方面的第二种可能的实现方式，在第三种可能的实现方式中，所述绝缘涂层中的金属及其化合物的含量随着绝缘涂层的厚度的增加逐渐减低，所述绝缘涂层中的类金刚石膜的含量随着绝缘涂层的厚度的增加逐渐增加。
结合上述第一方面、第二方面的第一种可能的实现方式、第二方面的第二种可能的实现方式、第二方面的第三种可能的实现方式，在第四种可能的实现方式中，还包括在卡托基体上形成第一绝缘层之前对卡托基体进行真空状态下的离子清洗。
结合上述第二方面的第四种可能的实现方式，在第五种可能的实现方式中，还包括在形成的第一绝缘层上形成第二绝缘层后，对第二绝缘层进行高温烘烤。
结合上述第二方面的第四种可能的实现方式，在第六种可能的实现方式 中，所述形成的第一绝缘层的厚度介于0.3～7微米之间，形成的第二绝缘层的厚度介于3～100微米之间。
第三方面，提供了一种移动终端，该移动终端包括移动终端本体，设置在所述移动终端本体内的卡托，卡装在所述卡托内的卡，其中，所述卡托为上述任一项所述的卡托。
根据第一方面提供的卡托，第二方面提供的卡托的制备方法，第三方面提供的移动终端。通过在卡托基体上设置了两层绝缘涂层保护卡托基体，并且在设置时第一绝缘层的硬度高于第二绝缘层，在卡上的毛刺或尖锐部分在刺穿第二绝缘层时，可以通过第一绝缘层阻挡毛刺或尖锐部分，避免毛刺将卡托基体上的绝缘涂层划破。有效地提高了卡托的绝缘性能，进而提高了移动终端识别卡的效果，有效减少了由于卡托的绝缘涂层被划破，卡托导电，从而使得移动终端不能识别卡的情况。
附图说明
图1为本发明实施例提供的卡托的结构示意图；
图2为本发明实施例提供的卡托中的第一绝缘层的结构示意图；
图3为本发明实施例提供的卡托的制备方法的流程图；
图4为本发明实施例提供的移动终端的结构示意图。
附图标记：
10-卡托   11-卡托基体  12-第一绝缘层
121-金属打底层  122-中间层  123-绝缘涂层
13-第二绝缘层   20-移动终端本体  30-卡
具体实施方式
以下结合附图对本发明的具体实施例进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图1所示，图1示出了本发明实施例提供的卡托的结构示意图。
本发明实施例提供了一种卡托10，该卡托10包括卡托基体11，设置在卡托基体11上的第一绝缘层12，覆盖在第一绝缘层12的第二绝缘层13，且第一绝缘层12的硬度高于第二绝缘层13。
在上述实施例中，通过在卡托基体11上设置了两层绝缘涂层123保护卡托基体11，并且在设置时第一绝缘层12的硬度高于第二绝缘层13，在卡上的毛刺或尖锐部分在刺穿第二绝缘层13时，第二绝缘层13可以牺牲自身涂层消耗卡上的一部分毛刺和尖锐角部分，而剩余的毛刺和尖锐角部分将会大幅减少，这些剩余的毛刺或尖角在继续刺穿第一绝缘层12时，可以最大限度地保持第一绝缘层12的绝缘涂层完整性，避免第一绝缘层12被破坏而使卡托10导电，避免使移动终端不能识别卡的情况。
为了方便对本发明实施例的理解，下面结合附图以及具体的实施例对比本发明实施例提供的卡托10的结构进行详细的描述。
首先本实施例提供的卡托10为卡托10为任何装SIM卡的托盘，装SD卡的托盘，或其它为信号传输、号码识别、存储等方面的卡所需要的托盘，如智能手机，智能手表，智能手环，平板电脑，或者其它形式的可穿戴式设备等。
其中，针对本实施例提供的卡托10的卡托基体11，可以采用不同的材料制作，如卡托基体11的材质包括以下材质中的至少一种：金属材料、金属合金材料、金属基复合材料以及无机非金属。具体的，卡托10为不锈钢基材，还可以是其它钢铁类材料和铝合金、镁合金、钛合金、非晶合金、锌合金、铜合金、金属基复合材料等；也可以为陶瓷或其它无机非金属基材如陶瓷、玻璃、蓝宝石、微晶玻璃、尖晶石等；可以根据不同的需要选择不同的材料进行制备。
在具体制备时，形成在卡托基体11的第一绝缘层12及第二绝缘层13位于卡托基体11上放置卡的位置区域。即在卡托10上容纳卡的卡槽的侧壁上形成第一绝缘层12及第二绝缘层13，从而避免卡与卡托10接触时，划破卡托10上的绝缘层的情况的出现，进而改善了卡将卡托10划破，从而导致卡 托10导电，移动终端无法识别卡信息的状况。为了实现上述述效果，本实施例提供的绝缘层需要具备一定的厚度。具体的，第一绝缘层12的厚度介于0.3～7微米之间，第二绝缘层13的厚度介于3～100微米之间。其中，第一绝缘层12的厚度可以采用0.3微米、1微米、2微米、3微米、4微米、5微米、6微米、7微米等任意介于0.3～7微米之间的厚度。第二绝缘层13的厚度可以采用3微米、10微米、20微米、30微米、40微米、50微米、60微米、70微米、80微米、90微米、100微米等任意介于3～100微米之间的厚度，作为一种优选的方案，较佳的，第一绝缘层12的厚度介于0.3～3微米之间，第二绝缘层13的厚度介于10～25微米之间，如：第一绝缘层12的厚度为0.3微米、0.5微米、1微米、1.5微米、2微米、2.5微米、3微米等任意介于0.3～3微米之间的厚度，第二绝缘层13的厚度为10微米、15微米、20微米、25微米等任意介于10～25微米之间的厚度。
此外，在制备卡托基体11上的绝缘层时，第一绝缘层12的硬度高于第二绝缘层13。如第一绝缘层12的铅笔硬度一般在远大于9H左右，而第二绝缘层13的铅笔硬度为3H左右从而使得第一绝缘层12可以有效的阻止卡将卡托10划伤。
如图2所示，图2示出了卡托10结构中的第一绝缘层12的结构。在具体制备时，第一绝缘层12为包含类金刚石材料的绝缘涂层123。如：DLC(类金刚石Diamond-like Carbon)膜层，具有较高的硬度，DLC材料保证第一绝缘层12的硬度远远高于第二绝缘层13。其中，该第一绝缘层12包含至少有三层。即第一绝缘层12包括：设置在卡托基体11上的金属打底层121；设置在金属打底层121上的中间层122；以及设置在中间层122上的绝缘涂层123，其中，中间层122为金属及其化合物的混合层；绝缘涂层123为金属及其化合物、类金刚石材料的混合层。
在制作中间层122时，金属及其化合物的混合层中的金属化合物可以为：金属氧化物、金属氮化物、金属碳化物、金属硫化物、金属硼化物涂层、金属氮氧化合物、金属碳氮化合物或金属碳氧氮化合物。其中纯金属以及化合 物的两者可不限制比例可调，化合物重量百分占比可从0％～100％，可调从0％开始，纯金属重量百比占比可以从100％～0％可调，从100％开始；具体的，即中间层122从朝向金属打底层121的一侧开始，朝向远离金属打底层121的方向，纯金属的含量逐渐降低，金属化合物的含量逐渐增高。两者成一个对应的递变变化。即中间层122朝向金属打底层121的一侧为纯金属，朝向绝缘涂层123的一侧为纯金属化合物。
在制作绝缘涂层123时，绝缘涂层123可以采用中间层122的材料与DLC的混合涂层(即金属及其化合物、DLC材料)，或者只采用第二金属层的金属化合物与DLC材料混合的涂层。并且DLC与混合涂层的可不限制比例可调，DLC重量百分占比可以从0％～100％可调，从0％开始，可直至100％；金属化合物重量百分比例可从100％～0％可调，从100％开始，可直至0％。即绝缘涂层123中金属及其化合物的含量越靠近中间层122的位置含量越多；类金刚石材料含量越远离中间层122的位置含量越多。并且形成的绝缘涂层123中，绝缘涂层123朝向中间层122的一侧为纯金属化合物层，背离中间层122的一面为纯DLC膜。
本实施例提供第一绝缘层12采用DLC膜，虽然DLC不易划伤，但SIM卡的尖角和毛刺在人手的压力下可以刺伤DLC薄膜；因此，本实施例提供的卡托10在第一绝缘层12上增加了一层第二绝缘层13。第二绝缘层13为高分子类涂层，具体的，第二绝缘层13的材质包括以下材质中的至少一种：聚四氟乙烯涂层、油漆涂层以及油墨涂层。此外，还可以是任何高分子类涂层或者高分子与其它无机物质掺杂的涂层；也可以是上述涂层的复合叠加涂层。并且在采用混合层时，各成分的比例不受限制，可以采用任意比例的混合。在这些涂层处理后，需进行高温处理，一般聚四氟乙烯的高温处理温度为160～320℃，时间为15～60min；普通油墨或油漆的处理温度为50～200℃，时间为15～120min；以上涂层可以复合叠加，且每次喷涂后都要进行相应的烘烤处理。如单喷单烤，喷一次烤一次；或双喷双烤，喷一次烤一次，再喷一次再烤一次；或者是更多层的叠加。
通过上述描述可以看出，本实施例提供的卡托10通过采用两层不同硬度的绝缘层可以有效地避免卡托10上的尖锐或毛刺划破卡托10上的绝缘层，提高了卡托10的绝缘性能，避免了卡将卡托10划破，移动终端无法识别卡信息的情况的出现。
本发明实施例还提供了一种卡托10的制备方法，该方法包括：
在卡托基体上形成第一绝缘层；
在形成的第一绝缘层上形成第二绝缘层，且形成的第一绝缘层的硬度高于第二绝缘层。
在上述实施例中，通过在卡托10上形成两层不同硬度的绝缘层，有效地避免卡托10上的尖锐或毛刺划破卡托10上的绝缘层，从而提高了卡托10的绝缘性能，避免了卡将卡托10划破，移动终端无法识别卡信息的情况的出现。
为了方便对本发明实施例提供的卡托10的制备方法的理解，下面结合具体的实施例对其进行详细的说明。
如图3所示，图3示出了本发明实施例提供的卡托的制备方法的流程图。该卡托为上述具体实施例所述的卡托，其具体制备方法包括：
001、制备卡托基体。
具体的，卡托可以采用不同的材料制作，如卡托基体为金属材料、金属合金材料、金属基复合材料或无机非金属材料制作的卡托基体。具体的，卡托为不锈钢基材，还可以是其它钢铁类材料和铝合金、镁合金、钛合金、非晶合金、锌合金、铜合金、金属基复合材料等；也可以为陶瓷或其它无机非金属基材如陶瓷、玻璃、蓝宝石、微晶玻璃、尖晶石等；并且在制备时，可以根据卡托采用的材料的不同选择不同的制备方法，如：金属注射成形工艺、真空压铸、普通压铸等不同的工艺形成，上述工艺为现有技术中比较成熟的工艺，在此不再详细描述。
步骤002、对卡托基体进行真空状态下的离子清洗。
具体的，对卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；并按照设定的真空度条件及负偏压条件进 行离子清洗。
步骤003、在卡托基体上形成金属打底层。
具体的，该金属打底层为与卡托基体能够结合的金属材料制备的，该金属打底层的金属应当能够很好的附着到卡托基体上。其在具体制备时，可以采用电镀、PVD、CVD等工艺，上述工艺为现有技术中比较成熟的工艺，在此不再详细描述。
步骤004、在金属打底层上形成中间层。
具体的，中间层包含金属及其化合物。其中，金属及其化合物的混合中的金属化合物可以为：金属氧化物、金属氮化物、金属碳化物、金属硫化物、金属硼化物涂层、金属氮氧化合物、金属碳氮化合物或金属碳氧氮化合物。其中纯金属以及化合物的两者可不限制比例可调，化合物重量百分占比可从0％～100％，可调从0％开始，纯金属重量百比占比可以从100％～0％可调，从100％开始；具体的，即中间层中的金属的含量随着中间层厚度的增加逐渐降低，中间层中金属化合物的含量随着中间层厚度的增加含量逐渐增加。金属及其化合物成一个对应的递变变化。即中间层朝向金属打底层的一侧为纯金属，朝向绝缘涂层的一侧为纯金属化合物。其在具体制备时，可以采用电镀、PVD、CVD等工艺，上述工艺为现有技术中比较成熟的工艺，在此不再详细描述。
步骤005、在中间层上形成绝缘涂层。
具体的，绝缘涂层可以采用中间层的材料与DLC的混合涂层(即金属及其化合物、DLC材料)，或者只采用第二金属层的金属化合物与DLC材料混合的涂层。并且DLC与混合涂层的可不限制比例可调，DLC重量百分占比可以从0％～100％可调，从0％开始，可直至100％；金属化合物重量百分比例可从100％～0％可调，从100％开始，可直至0％。即绝缘涂层中的金属及其化合物的含量随着绝缘涂层的厚度的增加逐渐减低，绝缘涂层中的类金刚石膜的含量随着绝缘涂层的厚度的增加逐渐增加。并且形成的绝缘涂层中，绝缘涂层朝向中间层的一侧为纯金属化合物层，背离中间层的一面为纯DLC膜。 其在具体制备时，可以采用电镀、PVD、CVD等工艺，上述工艺为现有技术中比较成熟的工艺，在此不再详细描述。形成的金属打底层、中间层及绝缘涂层组成第一绝缘层，且形成的第一绝缘层的厚度介于0.3～7微米之间。
步骤006、在绝缘涂层上形成第二绝缘层。
具体的，形成的第二绝缘层的厚度介于3～100微米之间。在具体制备时，第二绝缘层为高分子类涂层。如：第二绝缘层为聚四氟乙烯涂层、油漆涂层或者油墨涂层，还可以是任何高分子类涂层或者高分子与其它无机物质掺杂的涂层；也可以是上述涂层的复合叠加涂层。并且在采用混合层时，各成分的比例不受限制，可以采用任意比例的混合。在具体制备时，第二绝缘层的制备方法不限，可以实现的，可以使用喷涂的任何方式。
步骤007、对第二绝缘层进行高温烘烤。
具体的，在第二绝缘层采用步骤006中描述的方式制备时，在这些涂层处理后，需进行高温处理，一般聚四氟乙烯的高温处理温度为160～320℃，时间为15～60min；普通油墨或油漆的处理温度为50～200℃，时间为15～120min；以上涂层可以复合叠加，且每次喷涂后都要进行相应的烘烤处理。如单喷单烤，喷一次烤一次；或双喷双烤，喷一次烤一次，再喷一次再烤一次；或者是更多层的叠加。
为了更进一步的对本发明实施例提供的卡托的制备方法的理解，下面以具体的卡托为例进行说明。
实施例1
本实施例以Nano SIM卡卡托为例进行说明，其中，卡托基体的材料为17-4不锈钢，其具体制备方法为：
步骤一：通过金属注射成形工艺形成卡托基体；
步骤二、在形成的卡托基体的指定区域内制备DLC薄膜；
其具体步骤为：
A)对不锈钢卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
B)本实施例为磁控溅射靶源，对PVD炉腔进行抽真空，真空度优于6.5×10-3Pa；然后通入氩气，使真空度维持在0.1～1Pa之间，开启负偏压800V，对不锈钢基材进行离子清洗；
C)开启氮气、开启磁控溅射钛靶、先后沉积与不锈钢基体结合的纯Ti层(金属打底层)、然后通过调节钛靶功率和气体流量，制备TiN和Ti混合层(中间层)；然后开启石墨靶，送乙炔气体，逐渐减小氮气送气量和逐渐减小钛靶功率直至为0，制得TiN与TiC与DLC的混合层；然后只剩下石墨靶和乙炔、氩气，进行纯DLC膜层制备；PVD膜层总厚度为2.8微米；
D)在DLC薄膜上喷涂聚四氟乙烯涂层，在第一次喷涂后，以260℃高温烘烤20分钟，在第二次喷涂后，以260℃高温烘烤20分钟；总厚度为25微米；
通过测试，用万用表测试DLC表面电阻大于20MΩ(2000万欧)，在喷涂聚四氟乙烯后表面电阻可达到2000万欧以上；将micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验60次后，手机依然可识别SIM卡，信号良好。
实施例2
本实施例以Nano SIM卡卡托为例进行说明，其中，卡托基体为非晶合金材料制作的卡托基体。其具体的制备方法为：
A)通过真空压铸的方法形成卡托基体；
B)在卡托基体的指定区域内制备DLC薄膜；
具体制备方法为：
步骤一：对卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
步骤二：本实施例为磁控溅射靶源，对PVD炉腔进行抽真空，真空度优于6×10-3Pa；然后通入氩气，使真空度维持在0.1～0.8Pa之间，开启负偏压700V，对基材进行离子清洗；
步骤三：开启乙炔气体、开启磁控溅射铬靶、先后沉积与基材结合的纯 铬层；然后通过调节铬靶功率和气体流量，制备CrC和Cr混合层；然后开启石墨靶，逐渐减小铬靶功率直至为0，制得CrC与DLC的混合层；然后只剩下石墨靶和乙炔、氩气，进行纯DLC膜层制备；PVD膜层总厚度为2.6微米；
步骤四：在DLC薄膜上喷涂聚四氟乙烯涂层，厚度为22微米；在第一次喷涂后，以160℃高温烘烤30分钟，在第二次喷涂后，以160℃高温烘烤30分钟。
通过测试，用万用表测试DLC表面电阻大于2MΩ(200万欧)，在喷涂聚四氟乙烯后表面电阻可达到2000万欧以上；将micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验46次后，手机依然可识别SIM卡，信号良好。
实施例3
本实施例以Nano SIM卡卡托为例进行说明，其中，卡托基体为锌合金材料制作的卡托基体。其具体制备方法为：
A)通过普通压铸的方法制得卡托基体；
B)在卡托基体上的指定区域内制备DLC薄膜；
其具体制备方法为：
步骤一：对卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
步骤二：本实施例为磁控溅射靶源，对PVD炉腔进行抽真空，真空度优于5×10-3Pa；然后通入氩气，使真空度维持在0.3～0.8Pa之间，开启负偏压500V，对基材进行离子清洗；
步骤三：开启乙炔气体、开启磁控溅射钨靶、先后沉积与基材结合的纯钨层、然后通过调节钨靶功率和气体流量，制备WC和W混合层；然后开启石墨靶，逐渐减小W靶功率直至为0，制得WC与DLC的混合层；然后只剩下石墨靶和乙炔、氩气，进行纯DLC膜层制备；PVD膜层总厚度为2.9微米；
步骤四：在DLC薄膜上喷涂聚四氟乙烯涂层，厚度为20微米；在喷涂后，以320℃高温烘烤30分钟。
通过测试，用万用表测试DLC表面电阻大于2MΩ(200万欧)，在喷涂聚四氟乙烯后表面电阻可达到2000万欧以上；将Micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验52次后，手机依然可识别SIM卡，信号良好。
实施例4
本实施例以Macro SIM卡卡托为了进行说明，其中，卡托基体为316不锈钢材料制作的卡托基体。其具体制备方法为：
A)通过金属注射成形卡托基体；
B)在卡托基体的指定区域内制备DLC薄膜；
其具体步骤为：
步骤一：对卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
步骤二：本实施例为电弧离子镀靶源，对PVD炉腔进行抽真空，真空度优于6.5×10-3Pa；然后通入氩气，使真空度维持在0.4～0.9Pa之间，开启负偏压800V，对基材进行离子清洗；
步骤三：开启氧气气体、开启铝靶、先后沉积与基材结合的纯铝层；然后通过调节铝靶功率和气体流量，制备氧化铝和铝混合层；然后开启石墨靶，逐渐减小铝靶功率直至为0，减少氧气流量直至为0，制得氧化铝与DLC的混合层；然后只剩下石墨靶和乙炔、氩气，进行纯DLC膜层制备；PVD膜层总厚度为2.5微米；
步骤四：在DLC薄膜上喷涂普通油漆涂层，厚度为15微米；在喷涂后，以80℃高温烘烤40分钟。
通过测试，用万用表测试DLC表面电阻大于2MΩ(200万欧)，在喷涂聚四氟乙烯后表面电阻可达到2000万欧以上；将Micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验45次后，手机依然可识别SIM卡，信号良好。
实施例5
本实施例以Nano SIM卡卡托为例进行说明。其中，卡托基体为非晶合金制作的卡托基体。其具体的制备方法为：
A)通过真空压铸的方法制得卡托基体；
B)在卡托基体的指定区域内制备DLC薄膜；
其具体步骤为：
步骤一：对卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
步骤二：本实施例为电弧离子镀靶源，对PVD炉腔进行抽真空，真空度优于6.5×10-3Pa；然后通入氩气，使真空度维持在0.4～0.9Pa之间，开启负偏压800V，对基材进行离子清洗；
步骤三：开启氮气气体、开启钛靶、先后沉积与基材结合的纯钛层；然后通过调节铝靶功率和气体流量，制备TiN和Ti混合层；然后开启石墨靶，逐渐减小钛靶功率直至为0，减少氮气流量直至为0，制得氮化钛与DLC的混合层；然后只剩下石墨靶和乙炔、氩气，进行纯DLC膜层制备；PVD膜层总厚度为3微米；
步骤四：在DLC薄膜上进行普通油墨印刷，厚度为26微米；在印刷后，以80℃高温烘烤40分钟。
通过测试，用万用表测试DLC表面电阻大于20MΩ(200万欧)，在喷涂聚四氟乙烯后表面电阻可达到2000万欧以上；将Micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验50次后，手机依然可识别SIM卡，信号良好。
实施例6
本实施例以Nano SIM卡的卡托为例进行说明，其中，卡托基体的材料为17-4不锈钢，其具体制备方法为：
步骤一：通过金属注射成形工艺形成卡托基体；
步骤二、在形成的卡托基体的指定区域内制备DLC薄膜；
其具体步骤为：
A)对不锈钢卡托基体表面进行除油、除脂、超声波纯水清洗、然后烘干，装载在相关制具上进入PVD炉腔；
B)本实施例为磁控溅射靶源，对PVD炉腔进行抽真空，真空度优于6.5×10-3Pa；然后通入氩气，使真空度维持在0.1～1Pa之间，开启负偏压600V，对不锈钢基材进行离子清洗；
C)开启磁控溅射Ti靶、先后沉积与不锈钢基体结合的纯Ti层(金属打底层)、然后通过调节碳化钨靶功率和气体流量，制备WC和Ti混合层(中间层)；然后开启石墨靶，逐渐减小氮气送气量和逐渐减小钛靶功率直至为0，送乙炔气体并不断加大流量，得到WC与DLC的混合层；PVD膜层总厚度为3.2微米；
D)在DLC薄膜上喷涂聚四氟乙烯涂层，在第一次喷涂后，以160℃高温烘烤30分钟，在第二次喷涂后，以160℃高温烘烤30分钟；总厚度为28微米；
通过测试，用万用表测试DLC表面电阻大于2MΩ(200万欧)，在喷涂聚四氟乙烯后表面电阻可达到200万欧以上；将micro SIM卡剪卡为Nano SIM卡后，将Nano SIM卡放进卡槽进行手机真机插拔实验，反复循环，在实验60次后，手机依然可识别SIM卡，信号良好。
如图4所示，图4示出了本发明实施例提供的移动终端的结构示意图，
本发明实施例还提供了一种移动终端，该移动终端包括移动终端本体20，设置在移动终端本体20内的卡托10，卡装在所述卡托10内的卡30，其中，该卡托10为上述任一项所述的卡托10。
在上述实施例中，通过在卡托基体上设置了两层绝缘涂层保护卡托基体，并且在设置时第一绝缘层的硬度高于第二绝缘层，在卡上的毛刺或尖锐部分在刺穿第二绝缘层时，可以通过第一绝缘层阻挡毛刺或尖锐部分，避免毛刺将卡托基体上的绝缘涂层划破。有效地提高了卡托10的绝缘性能，进而提高了移动终端识别卡的效果。有效减少了由于卡托10的绝缘涂层被划破，卡托10导电，从而使得移动终端不能识别卡的情况。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (20)

  1. 一种卡托，其特征在于，包括卡托基体，设置在所述卡托基体上的第一绝缘层，覆盖在所述第一绝缘层的第二绝缘层，且所述第一绝缘层的硬度高于所述第二绝缘层。
  2. 如权利要求1所述的卡托，其特征在于，所述第一绝缘层为包含类金刚石材料的绝缘涂层。
  3. 如权利要求1或2所述的卡托，其特征在于，所述第一绝缘层包括：设置在所述卡托基体上的金属打底层；设置在所述金属打底层上的中间层；以及设置在所述中间层上的绝缘涂层，其中，所述中间层为金属及其化合物的混合层；所述绝缘涂层为金属及其化合物、类金刚石材料的混合层。
  4. 如权利要求3所述的卡托，其特征在于，所述绝缘涂层中金属及其化合物的含量越靠近所述中间层的位置含量越多；所述类金刚石材料含量越远离所述中间层的位置含量越多。
  5. 如权利要求3所述的卡托，其特征在于，所述金属及其化合物的混合层中的金属化合物可以为：金属氧化物、金属氮化物、金属碳化物、金属硫化物、金属硼化物、金属氮氧化合物、金属碳氮化合物或金属碳氧氮化合物。
  6. 如权利要求1所述的卡托，其特征在于，所述卡托基体的材质包括以下材质中的至少一种：
    金属材料、金属合金材料、金属基复合材料以及无机非金属材料。
  7. 如权利要求1所述的卡托，其特征在于，所述第一绝缘层的厚度介于0.3～7微米之间。
  8. 如权利要求7所述的卡托，其特征在于，所述第二绝缘层的厚度介于3～100微米之间。
  9. 如权利要求1所述的卡托，其特征在于，所述第一绝缘层的厚度介于0.3～3微米之间。
  10. 如权利要求9所述的卡托，其特征在于，所述第二绝缘层的厚度介 于10～25微米之间。
  11. 如权利要求1～10任一项所述的卡托，其特征在于，所述第二绝缘层为高分子类涂层。
  12. 如权利要求11所述的卡托，其特征在于，所述第二绝缘层的材质包括以下材质中的至少一种：
    聚四氟乙烯涂层、油漆涂层以及油墨涂层。
  13. 一种卡托的制备方法，其特征在于，包括以下步骤：
    在卡托基体上形成第一绝缘层；
    在形成的第一绝缘层上形成第二绝缘层，且形成的第一绝缘层的硬度高于第二绝缘层。
  14. 如权利要求13所述的卡托的制备方法，其特征在于，所述在卡托基体上形成第一绝缘层具体包括：
    在所述卡托基体上形成金属打底层；
    在所述金属打底层上形成中间层；
    在所述中间层上形成绝缘涂层；其中，所述中间层为金属及其化合物的混合层；所述绝缘涂层为金属及其化合物、类金刚石材料的混合层。
  15. 如权利要求14所述的卡托的制备方法，其特征在于，所述中间层中的金属的含量随着中间层厚度的增加逐渐降低，所述中间层中金属化合物的含量随着中间层厚度的增加含量逐渐增加。
  16. 如权利要求15所述的卡托的制备方法，其特征在于，所述绝缘涂层中的金属及其化合物的含量随着绝缘涂层的厚度的增加逐渐减低，所述绝缘涂层中的类金刚石膜的含量随着绝缘涂层的厚度的增加逐渐增加。
  17. 如权利要求13～16任一项所述的卡托的制备方法，其特征在于，还包括在卡托基体上形成第一绝缘层之前对卡托基体进行真空状态下的离子清洗。
  18. 如权利要求17所述的卡托的制备方法，其特征在于，还包括在形成的第一绝缘层上形成第二绝缘层后，对第二绝缘层进行高温烘烤。
  19. 如权利要求17所述的卡托的制备方法，其特征在于，所述形成的第一绝缘层的厚度介于0.3～7微米之间，形成的第二绝缘层的厚度介于3～100微米之间。
  20. 一种移动终端，其特征在于，包括移动终端本体，设置在所述移动终端本体内的卡托，卡装在所述卡托内的卡，其中，所述卡托为如权利要求1～12任一项所述的卡托。
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