TW201311915A - 鍍膜件及其製備方法 - Google Patents

鍍膜件及其製備方法 Download PDF

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TW201311915A
TW201311915A TW100132932A TW100132932A TW201311915A TW 201311915 A TW201311915 A TW 201311915A TW 100132932 A TW100132932 A TW 100132932A TW 100132932 A TW100132932 A TW 100132932A TW 201311915 A TW201311915 A TW 201311915A
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layer
nickel
aluminum
substrate
metal
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Cheng-Shi Chen
Cong Li
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Hon Hai Prec Ind Co Ltd
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Abstract

一種鍍膜件，其包括基材、形成於基材表面的複合層及形成於複合層表面的鉻氧氮層，該複合層包括複數鎳鋁鈥層和複數金屬銥層，該鎳鋁鈥層和金屬銥層交替排布。所鍍膜層使所述鍍膜件具有良好的抗高溫氧化性能，從而有效提高鍍膜件的使用壽命。此外，本發明還提供一種所述鍍膜件的製備方法。

Description

鍍膜件及其製備方法
本發明涉及一種鍍膜件及其製備方法。
鈮基合金具有較高的熔點(＞1700℃)，較低的密度(6.6～7.2g/cm3)，良好的室溫斷裂韌性(＞20Mpa.m1/2)，良好的高溫強度及鑄造性能。然而，鈮基合金抗氧化性能差，在溫度較高的條件下(1200℃～1400℃或更高溫度)使用時存在嚴重的氧化現象。
有鑒於此，有必要提供一種提高鈮基合金抗高溫氧化性能的鍍膜件。
另外，還有必要提供一種上述鍍膜件的製備方法。
一種鍍膜件，其包括基材、形成於基材表面的複合層及形成於複合層表面的鉻氧氮層，該複合層包括複數鎳鋁鈥層和複數金屬銥層，該鎳鋁鈥層和金屬銥層交替排布，其中該複合層中與所述基材直接相結合的是鎳鋁鈥層，與鉻氧氮層直接相結合的為金屬銥層。
一種鍍膜件的製備方法，其包括如下步驟：
提供基材；
在該基材的表面形成鎳鋁鈥層；
在該鎳鋁鈥層的表面形成金屬銥層；
交替重複上述形成鎳鋁鈥層和金屬銥層的步驟製備所述複合層，且使複合層的最外層為金屬銥層；
在該複合層的表面形成鉻氧氮層。
本發明複合層包括複數鎳鋁鈥層和複數金屬銥層，鎳鋁鈥層具有優異的抗氧化性能；金屬銥層在高溫條件下氧滲透率低，可以有效阻止氧朝基材內擴散；最外層鉻氧氮層膜層緻密，可有效延緩氧朝基材的方向擴散，從而進一步保護複合層和基材；因此所鍍膜層使所述鍍膜件具有良好的抗高溫氧化性能，從而有效提高鍍膜件的使用壽命。
請參閱圖1，本發明一較佳實施方式的鍍膜件10包括基材11、形成於基材11表面的複合層13及形成於複合層13表面的鉻氧氮(CrON)層15。該複合層13包括複數鎳鋁鈥(NiAlHo)層131和複數金屬銥(Ir)層133，該鎳鋁鈥層131和金屬銥層133交替排布，其中與所述基材11直接相結合的是鎳鋁鈥層131，與CrON層15相結合的為金屬銥層133。
該基材11可由陶瓷或金屬製成，該基材11的材質優選鈮合金。
每層鎳鋁鈥層131和每層銥層133的厚度均為15～20nm。所述複合層13的總厚度為1.5～4μm。本實施例中，所述複數鎳鋁鈥層131和複數金屬銥層133的層數均分別為50～133層。該鎳鋁鈥層131中Ni的原子百分含量為50～60%，Al的原子百分含量為25～30%，Ho的原子百分含量為10～25%。
該鉻氧氮層15中鉻的原子百分含量為80～90%，氧的原子百分含量為5～10%，氮的原子百分含量為5～10%。該鉻氧氮層15的厚度為3～5μm。
本明一較佳實施方式的鍍膜件10的製備方法，其包括如下步驟：
請參閱圖2，提供一真空鍍膜機20，該真空鍍膜機20包括一鍍膜室21及連接於鍍膜室21的一真空泵30，真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)、銥靶23、鎳鋁鈥合金靶24和鉻靶26。轉架帶動基材11沿圓形的軌跡25公轉，且基材11在沿軌跡25公轉時亦自轉。該鎳鋁鈥合金靶24中Ni的原子百分含量為50～60%，Al的原子百分含量為25～30%，Ho的原子百分含量為10～25%。
提供基材11，該基材11可由陶瓷或金屬製成，該基材11的材質優選為鈮合金。
對該基材11進行表面預處理。該表面預處理可包括常規的對基材11進行無水乙醇超聲波清洗及烘乾等步驟。
採用磁控濺射法在經清洗後的基材11的表面濺鍍複合層13。濺鍍該複合層13在所述真空鍍膜機20中進行。將基材11放入鍍膜室21內，將該鍍膜室21抽真空至8×10-3Pa，並加熱所述鍍膜室21至溫度為100～200℃。
首先濺鍍NiAlHo層131，開啟NiAlHo合金靶24的電源，設置NiAlHo合金靶24的電源功率為10～15kw，通入工作氣體氬氣，氬氣流量為80～150sccm，對基材11施加-100～-300V的偏壓。濺鍍NiAlHo層131的時間為45～90s。
接著濺鍍Ir層133時，關閉NiAlHo合金靶24，開啟Ir靶23，設置Ir靶23的電源功率為8～10kw，保持偏壓、鍍膜室21的溫度及氬氣流量不變。濺鍍Ir層133的時間為45～90s。
重複上述交替濺鍍NiAlHo層131和Ir層133的步驟，濺鍍NiAlHo層131和Ir層133的次數均為50～133次。
保持氬氣流量、基材11的偏壓、鍍膜室21的溫度等參數不變，繼續採用磁控濺射法在複合層13的表面濺鍍鉻氧氮層15。關閉銥靶23和鎳鋁鈥靶24，開啟鉻靶26並設置鉻靶26的電源功率為8～10kw，並通入反應氣體氮氣和氧氣，氮氣流量為10～50sccm，氧氣流量為20～80sccm。濺鍍鉻氧氮層15的時間為50～80min。
下面藉由實施例來對本發明進行具體說明。
實施例1
本實施例所使用的真空鍍膜機20為中頻磁控濺射鍍膜機。
本實施例所使用的基材11的材質為鈮基合金。
濺鍍NiAlHo層131：NiAlHo合金靶24中Ni的原子百分含量為50%，Al的原子百分含量為25%，剩餘的為Ho，NiAlHo合金靶24的電源功率為10kw，氬氣流量為80sccm，基材11的偏壓為-100V，鍍膜室21的溫度為100℃，濺鍍NiAlHo層131的時間為45s。
濺鍍Ir層133：Ir靶23的電源功率為8kw，保持偏壓、鍍膜室21的溫度及氬氣流量不變，濺鍍Ir層133的時間為45s。
重複上述交替濺鍍NiAlHo層131和Ir層133的步驟，濺鍍NiAlHo層131和Ir層133的次數均為133次；該複合層13的厚度為4μm。
濺鍍CrON層15：鉻靶26的功率為8kw，氬氣流量、偏壓、鍍膜室21的溫度等工藝參數與濺鍍複合層13的相同，氮氣流量為25sccm，氧氣流量為35sccm，鍍膜時間為50min；該CrON層15的厚度為3μm。
實施例2
本實施例所使用的真空鍍膜機20為中頻磁控濺射鍍膜機。
本實施例所使用的基材11的材質為鈮基合金。
濺鍍NiAlHo層131：NiAlHo合金靶24中Ni的原子百分含量為60%，Al的原子百分含量為25%，剩餘的為Ho，NiAlHo合金靶24的電源功率為10kw，氬氣流量為80sccm，基材11的偏壓為-100V，鍍膜室21的溫度為100℃，濺鍍NiAlHo層131的時間為80s。
濺鍍Ir層133：Ir靶23的電源功率為9kw，保持偏壓、鍍膜室21的溫度及氬氣流量不變，濺鍍Ir層133的時間為80s。
重複上述交替濺鍍NiAlHo層131和Ir層133的步驟，濺鍍NiAlHo層131和Ir層133的次數均為100次；該複合層13的厚度為4μm。
濺鍍CrON層15：鉻靶26的功率為9kw，氬氣流量、偏壓、鍍膜室21的溫度等工藝參數與濺鍍複合層13的相同，氮氣流量為25sccm，氧氣流量為35sccm，鍍膜時間為50min；該CrON層15的厚度為3.2μm。
本發明複合層13包括複數鎳鋁鈥層131和複數金屬銥層133，鎳鋁鈥層131具有優異的抗氧化性能；金屬銥層133在高溫條件下氧滲透率低，可以有效阻止氧朝基材11內擴散；最外層鉻氧氮層15膜層緻密，可有效延緩氧朝基材11的方向擴散，從而進一步保護複合層13和基材11；因此所鍍膜層使所述鍍膜件10具有良好的抗高溫氧化性能，從而有效提高鍍膜件10的使用壽命。
10．．．鍍膜件
11．．．基材
13．．．複合層
131．．．鎳鋁鈥層
133．．．金屬銥層
15．．．鉻氧氮層
20．．．真空鍍膜機
21．．．鍍膜室
23．．．銥靶
24．．．鎳鋁鈥靶
26．．．鉻靶
25．．．軌跡
30．．．真空泵
圖1為本發明一較佳實施例的鍍膜件的剖視圖；
圖2為本發明一較佳實施例真空鍍膜機的俯視示意圖。
10．．．鍍膜件
11．．．基材
13．．．複合層
131．．．鎳鋁鈥層
133．．．金屬銥層
15．．．鉻氧氮層

Claims (13)

  1. 一種鍍膜件，其包括基材，其改良在於：該鍍膜件還包括形成於基材表面的複合層及形成於複合層表面的鉻氧氮層，該複合層包括複數鎳鋁鈥層和複數金屬銥層，該鎳鋁鈥層和金屬銥層交替排布，其中該複合層中與所述基材直接相結合的是鎳鋁鈥層，與鉻氧氮層直接相結合的為金屬銥層。
  2. 如申請專利範圍第1項所述之鍍膜件，其中該鎳鋁鈥層中鎳的原子百分含量為50～60%，鋁的原子百分含量為25～30%，鈥的原子百分含量為10～25%。
  3. 如申請專利範圍第1項所述之鍍膜件，其中該鉻氧氮層中鉻的原子百分含量為80～90%，氧的原子百分含量為5～10%，氮的原子百分含量為5～10%。
  4. 如申請專利範圍第1項所述之鍍膜件，其中所述複數金屬銥層和複數鎳鋁鈥層的層數均為50～133層。
  5. 如申請專利範圍第1項所述之鍍膜件，其中該基材由金屬或陶瓷製成。
  6. 如申請專利範圍第1項所述之鍍膜件，其中每一金屬銥層的厚度為15～20nm。
  7. 如申請專利範圍第1項所述之鍍膜件，其中每一鎳鋁鈥層的厚度為15～20nm。
  8. 如申請專利範圍第1項所述之鍍膜件，其中該鉻氧氮層的厚度為3～5μm。
  9. 一種鍍膜件的製備方法，其包括如下步驟：
    提供基材；
    在該基材的表面形成鎳鋁鈥層；
    在該鎳鋁鈥層的表面形成金屬銥層；
    交替重複上述形成鎳鋁鈥層和金屬銥層的步驟製備所述複合層，且使複合層的最外層為金屬銥層；
    在該複合層的表面形成鉻氧氮層。
  10. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中形成所述鎳鋁鈥層的方法為：採用磁控濺射法，使用鎳鋁鈥合金靶，設置鎳鋁鈥合金靶的電源功率為10～15kw，以氬氣為工作氣體，氬氣流量為80～150sccm，對基材施加的偏壓為-100～-300V，鍍膜溫度為100～200℃，濺鍍鎳鋁鈥層的時間為45～90s。
  11. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中形成所述金屬銥層的方法為：採用磁控濺射法，使用銥靶，設置銥靶的電源功率為8～10kw，以氬氣為工作氣體，氬氣流量為80～150sccm，對基材施加的偏壓為-100～-300V，鍍膜溫度為100～200℃，濺鍍金屬銥層的時間為45～90s。
  12. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中交替濺鍍鎳鋁鈥層和金屬銥層的次數為50～133次。
  13. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中形成所述鉻氧氮層的方法為：採用磁控濺射法，使用鉻靶，並設置鉻靶的電源功率為8～10kw，以氮氣和氧氣為反應氣體，氮氣流量為10～50sccm，氧氣流量為20～80sccm，以氬氣為工作氣體，氬氣流量為80～150sccm，對基材施加的偏壓為-100～-300V，鍍膜溫度為100～200℃，濺鍍鉻氧氮層的時間為50～80min。
TW100132932A 2011-09-09 2011-09-14 鍍膜件及其製備方法 TW201311915A (zh)

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