WO2017000328A1 - 一种oled薄膜封装结构及其封装方法、显示装置 - Google Patents

一种oled薄膜封装结构及其封装方法、显示装置 Download PDF

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Publication number
WO2017000328A1
WO2017000328A1 PCT/CN2015/084324 CN2015084324W WO2017000328A1 WO 2017000328 A1 WO2017000328 A1 WO 2017000328A1 CN 2015084324 W CN2015084324 W CN 2015084324W WO 2017000328 A1 WO2017000328 A1 WO 2017000328A1
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Prior art keywords
passivation layer
thinned region
oled device
thickness
region
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PCT/CN2015/084324
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English (en)
French (fr)
Inventor
余威
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/776,832 priority Critical patent/US20170141348A1/en
Publication of WO2017000328A1 publication Critical patent/WO2017000328A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of organic electroluminescence display, and in particular to an OLED film package structure, a package method thereof, and a display device.
  • Organic Light Emitting Diode also known as Organic Light-Emitting Diode, OLED
  • OLED Organic Light-Emitting Diode
  • OLED displays have many advantages, including the ability to achieve flexible displays.
  • the flexible OLED panel can be realized by using a flexible plastic substrate as a carrier and a film packaging process.
  • the OLED film package mainly adopts a structure of a passivation layer and a buffer layer, and the passivation layer is generally made of an inorganic material such as SiNx; the buffer layer is usually made of an organic or organic material.
  • the thickness of the whole film package is micron-scale, and the stress is large when the inorganic film is thick, it is easy to break during bending, and water oxygen will age the OLED device through the fracture, so that the bending resistance of the package part of the flexible OLED device becomes difference.
  • the technical problem to be solved by the present invention is to provide an OLED film package structure, a package method thereof, and a display device, which can enhance the bending performance of the package portion of the flexible OLED device.
  • the present invention adopts a technical solution to provide an OLED device package structure
  • the package structure includes: a substrate substrate; an OLED device on the substrate substrate; and a first passivation layer covering the OLED device;
  • the side of the first passivation layer away from the OLED device includes at least one thinned region, and the thickness of the thinned region is smaller than the thickness of the first passivation layer.
  • the thinned area includes a plurality of crisscross strip regions.
  • the thinned area includes a plurality of rectangular areas which are alternately arranged at intervals.
  • the package structure further includes a second passivation layer covering the first passivation layer; the side of the second passivation layer remote from the OLED device includes at least one thinned region, and the thickness of the thinned region is less than the thickness of the second passivation layer .
  • the thinned region of the first passivation layer and the thinned region of the second passivation layer are alternately arranged.
  • a buffer layer is further included between the first passivation layer and the second passivation layer, and the buffer layer is adjacent to one side of the OLED device and includes at least one thickened region for bonding with the thinned region of the first passivation layer.
  • a display device including an OLED device package structure, the package structure including: a substrate substrate; and an OLED device on the substrate substrate; Covering a first passivation layer of the OLED device; wherein a side of the first passivation layer remote from the OLED device includes at least one thinned region, the thinned region having a thickness less than the first passivation The thickness of the layer.
  • the thinned area comprises a plurality of crisscross strip regions.
  • the thinned area comprises a plurality of rectangular regions which are alternately arranged at intervals.
  • the package structure further includes a second passivation layer covering the first passivation layer; a side of the second passivation layer remote from the OLED device includes at least one thinned region, the thinned region The thickness is less than the thickness of the second passivation layer.
  • the thinned region of the first passivation layer and the thinned region of the second passivation layer are alternately arranged.
  • the buffer layer is further included between the first passivation layer and the second passivation layer, and the buffer layer is adjacent to one side of the OLED device and includes at least one thickened region for The thinned area of the layer is laminated.
  • an OLED device packaging method includes: providing a substrate; fabricating an OLED device on the substrate; covering the OLED device with a a first passivation layer; forming at least one thinned region on the first passivation layer, the thickness of the thinned region being less than a normal thickness of the first passivation layer.
  • the thickness of the thinned region is less than the normal thickness of the first passivation layer, further comprising: forming a buffer layer on the first passivation layer; A second passivation layer is formed on the buffer layer; at least one thinned region is formed on the second passivation layer, and the thickness of the thinned region is smaller than the normal thickness of the second passivation layer.
  • the thinned region of the first passivation layer and the thinned region of the second passivation layer are alternately arranged.
  • the package structure disclosed by the present invention comprises a substrate substrate, an OLED device on the substrate substrate, and a first passivation layer covering the OLED device; wherein the first blunt layer is different from the prior art
  • the side of the layer that is remote from the OLED device includes at least one thinned region, the thickness of the thinned region being less than the thickness of the first passivation layer.
  • FIG. 1 is a schematic structural view of a first embodiment of an OLED device package structure according to the present invention.
  • FIG. 2 is a schematic structural view of a second embodiment of an OLED device package structure according to the present invention.
  • FIG. 3 is a schematic top plan view of a first passivation layer in a second embodiment of the OLED device package structure of the present invention.
  • FIG. 4 is a schematic top plan view of a second passivation layer in a second embodiment of the OLED device package structure of the present invention.
  • FIG. 5 is a schematic structural view of a mask in a process of fabricating a first passivation layer in a second embodiment of an OLED device package structure according to the present invention
  • FIG. 6 is a schematic structural view of a semi-hollowed region in a mask plate in a process of fabricating a first passivation layer in a second embodiment of the OLED device package structure of the present invention
  • FIG. 7 is another top view structural view of a first passivation layer in a second embodiment of the OLED device package structure of the present invention.
  • FIG. 8 is a flow chart of a first embodiment of a method of packaging an OLED device of the present invention.
  • FIG. 9 is a flow chart of a second embodiment of an OLED device packaging method of the present invention.
  • Figure 10 is a schematic view showing the structure of an embodiment of the display device of the present invention.
  • a schematic structural view of a first embodiment of an OLED device package structure of the present invention includes: a substrate substrate 110; an OLED device 120 on the substrate substrate 110; and a first passivation layer 130 covering the OLED device 120.
  • the side of the first passivation layer 130 remote from the OLED device 120 includes at least one thinned region 131, and the thickness of the thinned region 131 is smaller than the thickness of the first passivation layer 130.
  • the base substrate 110 is generally a glass substrate. When a flexible OLED panel is fabricated, a bendable plastic substrate can also be used.
  • the OLED device 120 includes an anode, a cathode, and an electroluminescent material between the anode and the cathode, the luminescent material being illuminated when the anode and cathode are energized.
  • the first passivation layer 130 is generally made of an inorganic material such as a metal oxide, a metal sulfide or a metal nitride.
  • the metal oxide includes calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, Aluminum oxide, chromium oxide, tin dioxide, nickel oxide, tantalum pentoxide; metal sulfides including titanium disulfide, iron sulfide, chromium disulfide, copper sulfide, zinc sulfide, tin disulfide, nickel sulfide , cobalt disulfide, antimony trisulfide, lead sulfide, antimony trisulfide, antimony sulfide, zirconium disulfide, etc.
  • metal nitrides include silicon nitride, aluminum nitride and the like.
  • the first passivation layer 130 may be formed by a vacuum evaporation, ion beam sputtering, magnetron sputtering deposition, chemical vapor deposition or atomic layer deposition, etc., during the fabrication process, the incident particle flow and the substrate are processed.
  • the angle of the line can be set according to the actual situation. When the angle is 0°, the surface of the first passivation layer 130 is smooth and densely arranged.
  • the thinned region 131 may be formed by a process of photolithography and etching on the upper surface of the first passivation layer 130 after the first passivation layer 130 is formed, or may be formed by modifying the mask. A portion of the thinner passivation layer is additionally formed during the passivation layer 130 to form the thinned region 131.
  • the thinned region 131 may not only have the shape and number as shown in FIG. 1, but also may increase the number of the thinned regions 131 and change the outer shape of the thinned region 131; in addition, the number of passivation layers and buffer layers It is not limited to the number of layers listed in the embodiment, and it is also possible to add a plurality of passivation layers and buffer layers according to actual conditions.
  • the edge portion is not pressed when bent, resulting in the first passivation layer 130 not being damaged by the inherent stress when the entire package structure is bent. fracture.
  • the package structure disclosed in the embodiment includes a substrate substrate, an OLED device on the substrate substrate, and a first passivation layer covering the OLED device; wherein the first passivation layer is away from the side of the OLED device
  • the at least one thinned region is included, and the thickness of the thinned region is less than the thickness of the first passivation layer.
  • a schematic structural view of a second embodiment of an OLED device package structure of the present invention includes: a substrate substrate 210; an OLED device 220 on the substrate substrate 210; and a first passivation layer 230 covering the OLED device 220. a buffer layer 240 covering the first passivation layer 230; and a second passivation layer 250 covering the buffer layer 240.
  • the side of the first passivation layer 230 away from the OLED device 220 includes at least one thinned region 231.
  • the thickness of the thinned region 231 is smaller than the thickness of the first passivation layer 230.
  • the second passivation layer 250 is away from the OLED device 220.
  • One side includes at least one thinned region 251, and the thickness of the thinned region 251 is smaller than the thickness of the second passivation layer 250.
  • the buffer layer 240 is generally an organic material such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI). , polyvinyl chloride (PVC), polystyrene (PS), polymethyl methacrylate (PMMA), polybutylene terephthalate (PBT), polysulfone (PSO), polyparaphenylene Sulfone (PES), polyethylene (PE), polypropylene (PP), silicone (Silicone), polyamide (PA), polyvinylidene fluoride (PVDF), ethylene-vinyl acetate copolymer (EVA), Ethylene-vinyl alcohol copolymer (EVAL), polyacrylonitrile (PAN), polyvinyl acetate (PVAC), parylene, polyurea or polytetrafluoroethylene (PTFE), epoxy Resin (epoxyresin) and the like.
  • PET polyethylene terephthalate
  • PEN poly
  • the thinned region 231 of the first passivation layer 230 is a plurality of strip-shaped interleaved strip regions, and other portions are referred to as normal regions 232; likewise, the thinned regions of the second passivation layer 250 are 251 is a plurality of crisscross strip regions, and the other portions are referred to as normal regions 252.
  • a mask 500 as shown in FIG. 5 may be employed.
  • the mask 500 includes a frame 510, a non-hollowed region 520, a semi-hollowed region 530, and a hollowed out region 540.
  • the region corresponding to the frame 510 and the non-hollowed region 520 is not formed, the region corresponding to the semi-hollowed region 530 forms the thinned region 231, and the region corresponding to the hollowed region 540 forms the normal region 232.
  • the semi-hollowed region 530 includes a via region 531 and a non-via region 532, that is, only the via region 531 can pass through the plating material, and the hollow region 540 can pass through the coating material, so in the semi-hollow region 530
  • the formed thinned region 231 is thinner than the normal region 232 formed in the hollowed out region 540.
  • the fabrication process of the second passivation layer 250 is the same, and will not be described herein.
  • the distribution of the thinned region and the normal region in the first passivation layer 230 and the second passivation layer 250 may also be other shapes.
  • the thinned region 701 of the first passivation layer 700 may also be It is a rectangular area in which a plurality of intervals are alternately arranged.
  • the shape of the mask can also be improved according to the distribution of the thinned region 701.
  • the thinned region 231 of the first passivation layer 230 is spaced apart from the thinned region 251 of the second passivation layer 250. That is, the thinned region 231 of the first passivation layer 230 corresponds to the normal region 252 of the second passivation layer 250, and the thinned region 251 of the second passivation layer 250 corresponds to the normal region 232 of the first passivation layer 230.
  • the present embodiment sequentially covers the first passivation layer, the buffer layer and the second passivation layer on the OLED device, and the thinned regions on the first passivation layer and the second passivation layer are interleaved.
  • the setting increases the thinning area on the package structure area, and the bending resistance of the flexible OLED can be better ensured in consideration of more bending points, so that the passivation layer does not have its own stress when the package structure is bent. Larger and broken.
  • a flowchart of a first embodiment of an OLED device packaging method according to the present invention includes:
  • Step 801 providing a substrate substrate
  • Step 802 fabricating an OLED device on the substrate.
  • Step 803 covering a first passivation layer on the OLED device
  • Step 804 forming at least one thinned region on the first passivation layer, the thickness of the thinned region being smaller than the normal thickness of the first passivation layer.
  • a flowchart of a second embodiment of a method for packaging an OLED device of the present invention includes:
  • Step 901 providing a substrate substrate
  • Step 902 fabricating an OLED device on the substrate.
  • Step 903 covering a first passivation layer on the OLED device
  • Step 904 Form at least one thinned region on the first passivation layer, the thickness of the thinned region being smaller than the normal thickness of the first passivation layer.
  • Step 905 forming a buffer layer on the first passivation layer
  • Step 906 forming a second passivation layer on the buffer layer
  • Step 907 forming at least one thinned region on the second passivation layer, the thickness of the thinned region being smaller than the normal thickness of the second passivation layer.
  • the thinned region of the first passivation layer and the thinned region of the second passivation layer are alternately arranged.
  • the display device includes an OLED package structure in various embodiments as described above, that is, a base substrate 1010; an OLED device 1020 on the base substrate 1010; and an OLED covering The first passivation layer 1030 of the device 1020; wherein the side of the first passivation layer 1030 remote from the OLED device 1020 includes at least one thinned region 1031, the thickness of the thinned region 1031 being less than the thickness of the first passivation layer 1030.
  • the OLED device 1020 comprises an organic thin film in which an organic thin film is wrapped between the cathode and the anode metal, and when a voltage is applied to the two electrodes, the organic thin film emits light.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种OLED薄膜封装结构及其封装方法、显示装置，该封装结构包括：衬底基板（110）；位于衬底基板（110）上的OLED器件（120）；覆盖OLED器件（120）的第一钝化层（130）；其中，第一钝化层（130）上远离OLED器件（120）的一面包括至少一个减薄区（131），减薄区（131）的厚度小于第一钝化层（120）的厚度。通过上述方式，能够增强柔性OLED器件（120）封装部分的弯折性能。

Description

一种OLED薄膜封装结构及其封装方法、显示装置
【技术领域】
本发明涉及有机电致发光显示领域，特别是涉及一种OLED薄膜封装结构及其封装方法、显示装置。
【背景技术】
有机发光二极管又称为有机电激光显示（Organic Light-Emitting Diode，OLED），是新一代的显示器，通过在OLED基板上制作有机薄膜，其中有机薄膜被包在阴极和阳极金属之间，给两电极加电压，则有机薄膜会发光。OLED显示器有诸多优点，其中包括可实现柔性显示。如以可绕曲的塑胶基板等为载体，再配合薄膜封装制程，即可实现可绕曲的OLED面板。
目前OLED薄膜封装主要采用钝化层和缓冲层叠层的结构，钝化层一般采用无机材料，如SiNx；缓冲层常采用有机或偏有机类材料。
因整体薄膜封装厚度为微米级，且无机膜厚时应力较大，在弯折时易发生断裂，水氧气会透过这个断裂处老化OLED器件，使得柔性OLED器件封装部分的耐弯折性能变差。
【发明内容】
本发明主要解决的技术问题是提供一种OLED薄膜封装结构及其封装方法、显示装置，能够增强柔性OLED器件封装部分的弯折性能。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种OLED器件封装结构，封装结构包括：衬底基板；位于衬底基板上的OLED器件；覆盖OLED器件的第一钝化层；其中，第一钝化层上远离OLED器件的一面包括至少一个减薄区，减薄区的厚度小于第一钝化层的厚度。
其中，减薄区包括多条纵横交错的带状区域。
其中，减薄区包括多个间隔交替设置的矩形区域。
其中，封装结构还包括覆盖第一钝化层的第二钝化层；第二钝化层上远离OLED器件的一面包括至少一个减薄区，减薄区的厚度小于第二钝化层的厚度。
其中，第一钝化层的减薄区与第二钝化层的减薄区间隔交错设置。
其中，第一钝化层和第二钝化层之间还包括缓冲层，缓冲层靠近OLED器件的一面包括至少一个加厚区，用于与第一钝化层的减薄区贴合。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示装置，显示装置包括OLED器件封装结构，该封装结构包括：衬底基板；位于所述衬底基板上的OLED器件；覆盖所述OLED器件的第一钝化层；其中，所述第一钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
其中，所述减薄区包括多条纵横交错的带状区域。
其中，所述减薄区包括多个间隔交替设置的矩形区域。
其中，所述封装结构还包括覆盖所述第一钝化层的第二钝化层；所述第二钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第二钝化层的厚度。
其中，所述第一钝化层的减薄区与所述第二钝化层的减薄区间隔交错设置。
其中，所述第一钝化层和所述第二钝化层之间还包括缓冲层，所述缓冲层靠近所述OLED器件的一面包括至少一个加厚区，用于与所述第一钝化层的减薄区贴合。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种OLED器件封装方法，封装方法包括：提供一衬底基板；在衬底基板上制作一OLED器件；在OLED器件上覆盖一第一钝化层；在第一钝化层上形成至少一个减薄区，减薄区的厚度小于第一钝化层的正常厚度。
其中，在第一钝化层上形成至少一个减薄区，减薄区的厚度小于第一钝化层的正常厚度的步骤之后，还包括：在第一钝化层上形成一缓冲层；在缓冲层上形成一第二钝化层；在第二钝化层上形成至少一个减薄区，减薄区的厚度小于第二钝化层的正常厚度。
其中，第一钝化层的减薄区与第二钝化层的减薄区间隔交错设置。
本发明的有益效果是：区别于现有技术的情况，本发明公开的封装结构包括衬底基板、位于衬底基板上的OLED器件以及覆盖OLED器件的第一钝化层；其中，第一钝化层上远离OLED器件的一面包括至少一个减薄区，减薄区的厚度小于第一钝化层的厚度。通过上述方式，使得整个封装结构在弯折时第一钝化层不会因为本身的应力较大而产生断裂，保证了柔性OLED耐弯折性。
【附图说明】
图1是本发明OLED器件封装结构第一实施方式的结构示意图；
图2是本发明OLED器件封装结构第二实施方式的结构示意图；
图3是本发明OLED器件封装结构第二实施方式中第一钝化层的俯视结构示意图；
图4是本发明OLED器件封装结构第二实施方式中第二钝化层的俯视结构示意图；
图5是本发明OLED器件封装结构第二实施方式中第一钝化层制作过程中掩膜板的结构示意图；
图6是本发明OLED器件封装结构第二实施方式中第一钝化层制作过程中掩膜板中半镂空区的结构示意图；
图7是本发明OLED器件封装结构第二实施方式中第一钝化层的另一俯视结构示意图；
图8是本发明OLED器件封装方法第一实施方式的流程图；
图9是本发明OLED器件封装方法第二实施方式的流程图；
图10是本发明显示装置一实施的结构示意图。
【具体实施方式】
参阅图1，本发明OLED器件封装结构第一实施方式的结构示意图，该封装结构包括：衬底基板110；位于衬底基板110上的OLED器件120；覆盖OLED器件120的第一钝化层130；其中，第一钝化层130上远离OLED器件120的一面包括至少一个减薄区131，减薄区131的厚度小于第一钝化层130的厚度。
其中，衬底基板110一般是玻璃基板，在制作柔性的OLED面板时，也可以采用可弯折的塑料基板。
该OLED器件120包括阳极、阴极以及该阳极和阴极之间的电致发光材料，当阳极和阴极通电时，发光材料发光显示。
该第一钝化层130一般采用金属氧化物、金属硫化物或金属氮化物等无机材料制作，例如金属氧化物包括氧化钙、五氧化二钽、二氧化钛、二氧化锆、氧化铜、氧化锌、三氧化二铝、三氧化二铬、二氧化锡、氧化镍、五氧化二锑；金属硫化物包括二硫化钛、硫化铁、三硫化二铬、硫化铜、硫化锌、二硫化锡、硫化镍、三硫化二钴、三硫化二锑、硫化铅、三硫化二镧、硫化铈、二硫化锆等，金属氮化物包括氮化硅、氮化铝等。
第一钝化层130可以是采用真空蒸镀、离子束溅射、磁控溅射沉积、化学气相沉积或原子层沉积等制备方法形成，在制作过程中，入射粒子流与衬底基板的法线的夹角为可以根据其实情况设定，当夹角为0°时，第一钝化层130的表面平滑、排列致密。
减薄区131可以是在制作好第一钝化层130后，在第一钝化层130的上表面利用光刻和刻蚀的工艺形成的，也可以是通过改良掩膜板，在形成第一钝化层130的过程中就额外形成一部分较薄的钝化层以形成减薄区131。
当然，该减薄区131可以不仅仅是如图1中所示的形状和数量，也可以增加减薄区131的数量并改变减薄区131的外形；另外，钝化层和缓冲层的数量也不限于本实施方式列举的层数，还可以根据实际情况再增加多层钝化层和缓冲层都是可以的。
由于第一钝化层130上有部分减薄区131，在弯曲时边缘部分不会产生挤压，导致整个封装结构在弯折时第一钝化层130不会因为本身的应力较大而产生断裂。
区别于现有技术，本实施方式公开的封装结构包括衬底基板、位于衬底基板上的OLED器件以及覆盖OLED器件的第一钝化层；其中，第一钝化层上远离OLED器件的一面包括至少一个减薄区，减薄区的厚度小于第一钝化层的厚度。通过上述方式，使得整个封装结构在弯折时第一钝化层不会因为本身的应力较大而产生断裂，保证了柔性OLED耐弯折性。
参阅图2，本发明OLED器件封装结构第二实施方式的结构示意图，该封装结构包括：衬底基板210；位于衬底基板210上的OLED器件220；覆盖OLED器件220的第一钝化层230；覆盖第一钝化层230的缓冲层240；覆盖缓冲层240的第二钝化层250。
其中，第一钝化层230上远离OLED器件220的一面包括至少一个减薄区231，减薄区231的厚度小于第一钝化层230的厚度；第二钝化层250上远离OLED器件220的一面包括至少一个减薄区251，减薄区251的厚度小于第二钝化层250的厚度。
其中，缓冲层240一般是有机材料，例如聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚碳酸酯(PC)、聚酰亚胺(PI)、聚氯乙烯(PVC)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸丁二醇酯(PBT)、聚砜(PSO)、聚对苯二乙基砜(PES)、聚乙烯(PE)、聚丙烯(PP)、聚硅氧烷(Silicone)、聚酰胺(PA)、聚偏二氟乙烯(PVDF)、乙烯～醋酸乙烯共聚物(EVA)、乙烯～乙烯醇共聚物(EVAL)、聚丙烯腈(PAN)、聚乙酸乙烯酯(PVAC)、聚对二甲苯基(Parylene)、聚脲(Polyurea)或聚四氟乙烯(PTFE)、环氧树脂(epoxyresin)等。
同时参阅图3及图4，第一钝化层230的减薄区231为多条纵横交错的带状区域，其他部分称之为正常区232；同样，第二钝化层250的减薄区251为多条纵横交错的带状区域，其他部分称之为正常区252。
在第一钝化层230的制作过程中，可以采用如图5所示的掩膜板500，该掩膜板500包括框架510、非镂空区520、半镂空区530及镂空区540。在采用该掩膜板500镀膜时，框架510和非镂空区520对应的区域不成膜，半镂空区530对应的区域形成减薄区231，镂空区540对应的区域形成正常区232。
如图6所示，由于半镂空区530包括通孔区531及非通孔区532，即只有通孔区531能通过镀膜材料，而镂空区540能够全部通过镀膜材料，因此在半镂空区530形成的减薄区231比在镂空区540形成的正常区232要薄。
第二钝化层250的制作过程同理，这里不再赘述。
另外，第一钝化层230和第二钝化层250中的减薄区和正常区的分布也可以是其他形状，如图7所示，第一钝化层700的减薄区701也可以是多个间隔交替设置的矩形区域。当然，掩膜板的形状也可以根据减薄区701的分布而改进。
同时参阅图2、图3及图4，在一种实施方式中，第一钝化层230的减薄区231与第二钝化层250的减薄区251间隔交错设置。即第一钝化层230的减薄区231与第二钝化层250的正常区252对应，第二钝化层250的减薄区251与第一钝化层230的正常区232对应。
区别于现有技术，本实施方式通过在OLED器件上依次覆盖第一钝化层、缓冲层及第二钝化层，并且第一钝化层和第二钝化层上的减薄区间隔交错设置，使得封装结构区域上减薄区域增多，考虑到更多的弯折点，能够更好的保证柔性OLED的耐弯折性，使封装结构在弯折时钝化层不会因为本身的应力较大而产生断裂。
参阅图8，本发明OLED器件封装方法第一实施方式的流程图，该方法包括：
步骤801：提供一衬底基板；
步骤802：在衬底基板上制作一OLED器件；
步骤803：在OLED器件上覆盖一第一钝化层；
步骤804：在第一钝化层上形成至少一个减薄区，减薄区的厚度小于第一钝化层的正常厚度。
参阅图9，本发明OLED器件封装方法第二实施方式的流程图，该方法包括：
步骤901：提供一衬底基板；
步骤902：在衬底基板上制作一OLED器件；
步骤903：在OLED器件上覆盖一第一钝化层；
步骤904：在第一钝化层上形成至少一个减薄区，减薄区的厚度小于第一钝化层的正常厚度。
步骤905：在第一钝化层上形成一缓冲层；
步骤906：在缓冲层上形成一第二钝化层；
步骤907：在第二钝化层上形成至少一个减薄区，减薄区的厚度小于第二钝化层的正常厚度。
其中，第一钝化层的减薄区与第二钝化层的减薄区间隔交错设置。
以上方法均是基于本发明OLED器件封装结构的实施方式的一种方法，其技术原理相似，这里不再赘述。
参阅图10，本发明显示装置一实施的结构示意图，该显示装置包括如前所述各实施方式中的OLED封装结构，即衬底基板1010；位于衬底基板1010上的OLED器件1020；覆盖OLED器件1020的第一钝化层1030；其中，第一钝化层1030上远离OLED器件1020的一面包括至少一个减薄区1031，减薄区1031的厚度小于第一钝化层1030的厚度。其中，OLED器件1020包括有机薄膜，其中有机薄膜被包在阴极和阳极金属之间，给两电极加电压，则有机薄膜会发光。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种OLED器件封装结构，其中，所述封装结构包括：
    衬底基板；
    位于所述衬底基板上的OLED器件；
    覆盖所述OLED器件的第一钝化层；
    其中，所述第一钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
  2. 根据权利要求1所述的封装结构，其中，所述减薄区包括多条纵横交错的带状区域。
  3. 根据权利要求1所述的封装结构，其中，所述减薄区包括多个间隔交替设置的矩形区域。
  4. 根据权利要求1所述的封装结构，其中，所述封装结构还包括覆盖所述第一钝化层的第二钝化层；
    所述第二钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第二钝化层的厚度。
  5. 根据权利要求4所述的封装结构，其中，所述第一钝化层的减薄区与所述第二钝化层的减薄区间隔交错设置。
  6. 根据权利要求4所述的封装结构，其中，所述第一钝化层和所述第二钝化层之间还包括缓冲层，所述缓冲层靠近所述OLED器件的一面包括至少一个加厚区，用于与所述第一钝化层的减薄区贴合。
  7. 一种显示装置，其中，所述显示装置包括OLED器件封装结构，所述封装结构包括：
    衬底基板；
    位于所述衬底基板上的OLED器件；
    覆盖所述OLED器件的第一钝化层；
    其中，所述第一钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第一钝化层的厚度。
  8. 根据权利要求7所述的显示装置，其中，所述减薄区包括多条纵横交错的带状区域。
  9. 根据权利要求7所述的显示装置，其中，所述减薄区包括多个间隔交替设置的矩形区域。
  10. 根据权利要求7所述的显示装置，其中，所述封装结构还包括覆盖所述第一钝化层的第二钝化层；
    所述第二钝化层上远离所述OLED器件的一面包括至少一个减薄区，所述减薄区的厚度小于所述第二钝化层的厚度。
  11. 根据权利要求10所述的显示装置，其中，所述第一钝化层的减薄区与所述第二钝化层的减薄区间隔交错设置。
  12. 根据权利要求10所述的显示装置，其中，所述第一钝化层和所述第二钝化层之间还包括缓冲层，所述缓冲层靠近所述OLED器件的一面包括至少一个加厚区，用于与所述第一钝化层的减薄区贴合。
  13. 一种OLED器件封装方法，其中，所述封装方法包括：
    提供一衬底基板；
    在所述衬底基板上制作一OLED器件；
    在所述OLED器件上覆盖一第一钝化层；
    在所述第一钝化层上形成至少一个减薄区，所述减薄区的厚度小于所述第一钝化层的正常厚度。
  14. 根据权利要求13所述的封装方法，其中，在所述第一钝化层上形成至少一个减薄区，所述减薄区的厚度小于所述第一钝化层的正常厚度的步骤之后，还包括：
    在所述第一钝化层上形成一缓冲层；
    在所述缓冲层上形成一第二钝化层；
    在所述第二钝化层上形成至少一个所述减薄区，所述减薄区的厚度小于所述第二钝化层的正常厚度。
  15. 根据权利要求14所述的封装方法，其中，所述第一钝化层的减薄区与所述第二钝化层的减薄区间隔交错设置。
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