WO2015165182A1 - 有机电致发光器件的封装结构及封装方法、显示装置 - Google Patents
有机电致发光器件的封装结构及封装方法、显示装置 Download PDFInfo
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- WO2015165182A1 WO2015165182A1 PCT/CN2014/085317 CN2014085317W WO2015165182A1 WO 2015165182 A1 WO2015165182 A1 WO 2015165182A1 CN 2014085317 W CN2014085317 W CN 2014085317W WO 2015165182 A1 WO2015165182 A1 WO 2015165182A1
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- film
- packaging
- thin film
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- inorganic
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229920000620 organic polymer Polymers 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 139
- 239000010409 thin film Substances 0.000 claims description 126
- 238000005538 encapsulation Methods 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 claims 1
- -1 oxidized words Chemical compound 0.000 description 9
- 239000002105 nanoparticle Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002073 nanorod Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- 150000004141 diterpene derivatives Chemical class 0.000 description 1
- 125000000567 diterpene group Chemical group 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- XWPGCGMKBKONAU-UHFFFAOYSA-N zirconium(4+);disulfide Chemical compound [S-2].[S-2].[Zr+4] XWPGCGMKBKONAU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Definitions
- Embodiments of the present invention relate to a package structure, a package method, and a display device of an organic electroluminescence device. Background technique
- OLED Organic Light Emitting Diode
- an OLED device is formed by using a rigid glass substrate or a flexible polymer substrate as a carrier by depositing an anode, a cathode, and an organic light-emitting layer sandwiched therebetween.
- the organic light-emitting layer generally includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like.
- the organic light-emitting layer is very sensitive to oxygen and water vapor. If oxygen and water vapor penetrate into the organic light-emitting layer, it may cause undesirable phenomena such as black spots, pinholes, electrode oxidation, and organic material chemical reactions, which seriously affect the lifetime of the OLED device. Therefore, packaging technology is one of the keys to the industrialization of OLEDs.
- the commonly used packaging technology is a thin film encapsulation technique, which is an alternate multilayer film structure of an organic polymer film and an inorganic film prepared by a vacuum coating process.
- the inorganic film has high density and is the main water-oxygen barrier layer.
- the inorganic film has less elasticity and a larger internal stress, and the organic polymer film has higher elasticity, which causes peeling between the inorganic film and the organic polymer film, which causes water and oxygen to invade the organic light-emitting layer, thereby seriously affecting OLED device lifetime.
- a package structure of an organic electroluminescence device comprising: a substrate substrate for supporting the organic electroluminescent device;
- the first thin film encapsulation layer being composed of an inorganic thin film, an organic polymer thin film, and the inorganic thin film and the organic polymer Composition of a nano-scale rod-like film between the films.
- the package structure further includes a second thin film encapsulation layer, the second thin film encapsulation layer is composed of an inorganic thin film and an organic polymer thin film, and the second thin film encapsulation layer is located on the first thin film encapsulation layer.
- the second thin film encapsulation layer is composed of an inorganic thin film and an organic polymer thin film, and the second thin film encapsulation layer is located on the first thin film encapsulation layer.
- the number of layers of the first thin film encapsulation layer is 1-20.
- the number of layers of the first thin film encapsulation layer is 3-5.
- the sum of the number of layers of the first thin film encapsulation layer and the second thin film encapsulation layer is 1-20.
- the sum of the number of layers of the first thin film encapsulation layer and the second thin film encapsulation layer is 3 to 5.
- the inorganic thin film is formed of one of a metal oxide, a metal sulfide, and a metal nitride
- the nano-scale rod-shaped thin film is formed of one of a metal oxide, a metal sulfide, and a metal nitride.
- the inorganic thin film and the nano-scale rod-shaped thin film in the first thin film encapsulation layer are formed of the same chemical composition.
- the organic electroluminescent device is covered with at least one first thin film encapsulation layer.
- the first thin film encapsulation layer is composed of an inorganic thin film, an organic polymer film, and a The composition of the nano-scale rod-like film between the inorganic film and the organic polymer film, the nano-scale rod-shaped film is directly formed on the inorganic film, and all of the same kind or chemical and physical properties formed by the incident of the inorganic particle flow are similar.
- the material film layer therefore, the nano-scale rod-like film and the inorganic film are more closely combined.
- the effective contact area between the nano-scale rod-shaped film and the organic polymer film is larger and partially penetrates each other, which can effectively improve the nano-scale rod-like film and organic polymerization.
- the degree of bonding between the films thereby preventing peeling between the inorganic film and the organic polymer film, and ensuring the life of the OLED device.
- a display device comprising the package structure of the above-described organic electroluminescent device.
- a method of packaging an organic electroluminescent device includes:
- the first thin film encapsulation layer being composed of an inorganic thin film, an organic polymer thin film, and between the inorganic thin film and the organic polymer thin film Nano-scale rod-like film composition.
- the forming the first thin film encapsulation layer on the organic electroluminescent device comprises:
- the organic polymer film is formed on the nano-sized rod-shaped film.
- the forming a nano-scale rod-shaped film on the inorganic thin film comprises: forming the nano-particles in the inorganic thin film by vacuum evaporation, ion beam sputtering, magnetron sputtering deposition, or atomic layer deposition.
- the encapsulating method further includes: forming a second thin film encapsulation layer on the organic electroluminescent device, wherein the second thin film encapsulation layer is composed of an inorganic thin film and an organic polymer thin film.
- the number of layers of the first thin film encapsulation layer is 1-20.
- the number of layers of the first thin film encapsulation layer is 3-5.
- the sum of the number of layers of the first thin film encapsulation layer and the second thin film encapsulation layer is 1-20.
- the sum of the number of layers of the first thin film encapsulation layer and the second thin film encapsulation layer is 3 to 5.
- the inorganic thin film is formed of one of a metal oxide, a metal sulfide, and a metal nitride
- the nano-scale rod-shaped thin film is formed of one of a metal oxide, a metal sulfide, and a metal nitride.
- FIG. 1 is a schematic diagram 1 of a package structure of an organic electroluminescent device according to an embodiment of the present invention
- FIG. 2 is a schematic diagram 2 of a package structure of an organic electroluminescent device according to an embodiment of the present invention
- the embodiment of the invention provides a package structure of an organic electroluminescent device. As shown in FIG. 1 , the package structure includes:
- the first thin film encapsulation layer 3 is composed of an inorganic thin film 31, an organic polymer thin film 32, and a nano-scale rod-shaped thin film 33 between the inorganic thin film 31 and the organic polymer thin film 32.
- the nano-sized rod-shaped film 33 is similar to the inorganic film 31 and can be formed by a vacuum evaporation method, ion beam sputtering, magnetron sputtering deposition, or atomic layer deposition. The difference is that when the inorganic thin film 31 is formed, the angle between the incident particle flow and the normal of the base substrate is 0°, so that the particles can be uniformly deposited on the base substrate to form an inorganic film having a smooth surface and dense alignment; When the nano-scale rod-shaped film 33 is formed, the angle between the incident particle flow and the normal to the base substrate is 40. ⁇ 85. Compared with the inorganic film 31, the surface of the nano-sized rod-shaped film 33 is rough and the arrangement of the particles is loose.
- a nano-scale rod-like film means that the film includes a plurality of nano-scale rod-like structures.
- the nano-sized rod-shaped film 33 is directly formed on the inorganic thin film 31, and is a film layer of the same kind or similar chemical and physical properties formed by the incident of the inorganic particle flow. Therefore, the nano-scale rod-shaped film 33 and the inorganic film are formed.
- the combination of 31 is relatively tight.
- the inorganic thin film 31 and the nano-scale rod-shaped thin film 33 are formed of the same chemical composition material, but formed into different structures only in the process parameters in the formation process.
- the organic electroluminescent device is covered with at least one first thin film encapsulation layer.
- the first thin film encapsulation layer is composed of an inorganic thin film, an organic polymer thin film and a nano-scale rod-shaped thin film between the inorganic thin film and the organic polymer thin film, and the nano-scale rod-shaped thin film is directly formed on the inorganic thin film. Both of them are thin film layers of the same kind or similar chemical and physical properties formed by the incident of inorganic particle flow. Therefore, the combination of the nano-sized rod-shaped film and the inorganic film is relatively tight.
- the effective contact area between the nano-scale rod-shaped film and the organic polymer film is larger and partially penetrates each other, which can effectively improve the nano-scale rod-like film and organic polymerization.
- the degree of bonding between the films thereby preventing peeling between the inorganic film and the organic polymer film, and ensuring the life of the OLED device.
- the nano-scale rod-shaped film 33 also has a good light transmittance, can improve the light-emitting intensity of the OLED device, and improve the display effect of the OLED display device.
- the package structure further includes a second thin film encapsulation layer 4, wherein the second thin film encapsulation layer 4 is composed of an inorganic thin film and an organic polymer film.
- the second thin film encapsulation layer is located above or below the first thin film encapsulation layer. That is, the second thin film encapsulation layer may be disposed between the first thin film encapsulation layer and the organic electroluminescent device, or may be disposed on the opposite side of the organic electroluminescent device of the first thin film encapsulation layer.
- the second thin film encapsulation layer 4 is not provided with a nano-scale rod-shaped film.
- the first thin film encapsulation layer 3 and the second thin film encapsulation layer 4 are collectively referred to as a thin film encapsulation layer.
- the OLED device can cover 1 to 20 layers of the thin film encapsulation layer, that is, when only the first thin film encapsulation layer 3 is used, the number of layers of the first thin film encapsulation layer 3 is 1 ⁇ 20; including the first When a thin film encapsulation layer 3 and a second thin film encapsulation layer 4 are used, the sum of the number of layers of the first thin film encapsulation layer 3 and the second thin film encapsulation layer 4 is 1 to 20. As shown in FIG. 2 or FIG. 3, a plurality of thin film encapsulation layers are overlaid on each other on the OLED device.
- the encapsulating layer in contact with the organic electroluminescent device 2 completely covers the top and side faces of the organic electroluminescent device 2.
- the inorganic film 31 of the first encapsulation layer completely covers the top and side faces of the organic electroluminescent device 2.
- the number of layers of the thin film encapsulation layer is too large, the degree of light emission of the display device may be affected, and the display effect of the display device may be lowered.
- the number of layers is too small, the sealing property of the OLED device may not be ensured, so that the first film is preferable.
- the number of layers of the encapsulation layer 3 is 3 to 5 layers. At this time, the light output of the display device is good, and the sealing property of the OLED device is also ensured.
- the sum of the number of layers of the first thin film encapsulation layer 3 and the second thin film encapsulation layer 4 is preferably 3 to 5 layers.
- the material of the nano-rod film 33 may be a metal oxide or a metal sulfide or a metal nitride.
- Metal oxides include calcium oxide, antimony pentoxide, titanium dioxide, zirconium dioxide, copper oxide, oxidized words, aluminum oxide, chromium trioxide, tin dioxide, nickel oxide, antimony pentoxide; metal sulfides including Titanium disulfide, iron sulfide, dichromium trisulfide, copper sulfide, sulfuric acid, di-salt tin, nickel thinning, three-dissolving dicobalt, three-sparing diterpenes, lead-dissolving lead, three-sparing diterpenoids, vulcanization Niobium, zirconium disulfide, etc.
- metal nitrides include silicon nitride, aluminum nitride, and the like.
- the inorganic film 31 is also formed of one of a
- the materials of the inorganic thin film 31 and the nanorod thin film 33 in the same first thin film encapsulation layer 3 may be the same or may be freely combined according to actual conditions, and the materials of the inorganic thin film 31 in each thin film encapsulation layer may be different, similar
- the material of the nano-rod film 33 in each of the encapsulating film layers may also be different.
- the material of the organic polymer film 32 is polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyamide.
- Amine (PI) polyvinyl chloride (PVC), polystyrene (PS), polydecyl methacrylate (PMMA), polybutylene terephthalate (PBT), polysulfone (PSO), poly Phenylenediethyl sulfone (PES), polyethylene (PE), polypropylene (PP), polysiloxane (silicone), polyamide (PA), polyvinylidene fluoride (PVDF), ethylene-vinyl acetate copolymerization (EVA), ethylene-vinyl alcohol copolymer (EVAL), polyacrylonitrile (PAN), polyvinyl acetate (PVAC), Parylene, polyurea or polytetrafluoroethylene (PTFE), epoxy resin, and the like.
- PVC polyvinyl chloride
- the embodiment of the present invention further provides a display device comprising the above-mentioned package structure of the organic electroluminescent device.
- the display device is an OLED display device, and can be a display device such as a mobile phone, a tablet computer, a notebook computer, or a television.
- An embodiment of the present invention provides a method for packaging an organic electroluminescent device.
- the packaging method includes the following steps: Step S101: Providing a substrate.
- Step S102 preparing the organic electroluminescent device on the base substrate.
- Step S103 forming at least one first thin film encapsulation layer on the organic electroluminescent device, the first thin film encapsulation layer being composed of an inorganic thin film, an organic polymer thin film, and the inorganic thin film and the organic polymer thin film Composition between nanoscale rod-like films.
- step S103 includes:
- Step S1031 forming the inorganic thin film on the organic electroluminescent device.
- Step S1032 forming the nano-scale rod-shaped thin film on the inorganic thin film.
- Step S1033 forming the organic polymer film on the nano-scale rod-shaped film.
- step S1031 includes:
- Forming the nano-scale rod-shaped film on the inorganic thin film by vacuum evaporation, ion beam sputtering, magnetron sputtering deposition, or atomic layer deposition, wherein the incident particle flow of the nano-scale rod-shaped film is formed and
- the normal angle of the inorganic film is from 40° to 85°. .
- the OLED device can cover 1-20 layers of the first thin film encapsulation layer under the condition of both water blocking and oxygen barrier capability and thinning.
- the method further includes: forming a second thin film encapsulation layer on the organic electroluminescent device.
- the second thin film encapsulation layer is composed of an inorganic thin film and an organic polymer thin film. That is, in the embodiment of the present invention, similarly, the sum of the number of layers of the first thin film encapsulation layer and the second thin film encapsulation layer is 1 to 20 in consideration of both water blocking ability and light weight resistance.
- the number of layers of the thin film encapsulation layer is too large, the degree of light emission of the display device may be affected, and the display effect of the display device may be lowered.
- the sealing property of the OLED device may not be ensured, so that the first film is preferable.
- the number of layers of the encapsulation layer 3 is 3 to 5 layers. At this time, the light output of the display device is good, and the sealing property of the OLED device is also ensured.
- the first thin film encapsulation layer The sum of the number of layers of 3 and the second thin film encapsulation layer 4 is preferably 3 to 5 layers.
- the material of the nano-rod film 33 may be a metal oxide or a metal sulfide or a metal nitride.
- the inorganic film 31 is also composed of a metal oxide, a metal sulfide, and a metal nitride. One formed.
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/436,151 US9362528B2 (en) | 2014-04-29 | 2014-08-27 | Packaging structure and packaging method of organic electroluminescent device, and display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410177534.1 | 2014-04-29 | ||
CN201410177534.1A CN103972422B (zh) | 2014-04-29 | 2014-04-29 | 有机电致发光器件的封装结构及封装方法、显示装置 |
Publications (1)
Publication Number | Publication Date |
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WO2015165182A1 true WO2015165182A1 (zh) | 2015-11-05 |
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CN103972422B (zh) | 2014-04-29 | 2015-04-15 | 京东方科技集团股份有限公司 | 有机电致发光器件的封装结构及封装方法、显示装置 |
CN105047829B (zh) * | 2015-09-18 | 2017-05-10 | 京东方科技集团股份有限公司 | 有机电致发光器件的封装结构及封装方法、柔性显示装置 |
CN105552247B (zh) * | 2015-12-08 | 2018-10-26 | 上海天马微电子有限公司 | 复合基板、柔性显示装置及其制备方法 |
JP2017152256A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | 表示装置 |
CN106876607B (zh) * | 2017-03-21 | 2019-07-26 | 京东方科技集团股份有限公司 | 一种薄膜封装结构、薄膜封装方法及显示装置 |
US10749199B2 (en) | 2017-11-29 | 2020-08-18 | International Business Machines Corporation | Li1+xAlxTi2-x(PO4)3 solid-state thin film electrolyte for 3D microbattery and method of fabrication |
CN109728190A (zh) * | 2018-11-26 | 2019-05-07 | 云谷(固安)科技有限公司 | 显示面板和显示装置 |
CN109713155B (zh) * | 2018-11-30 | 2021-07-13 | 云谷(固安)科技有限公司 | 封装薄膜、显示面板及其制备方法 |
CN109616582A (zh) * | 2018-11-30 | 2019-04-12 | 云谷(固安)科技有限公司 | 一种柔性显示面板及其制备方法、柔性显示装置 |
CN110690356A (zh) * | 2019-09-03 | 2020-01-14 | 武汉华星光电半导体显示技术有限公司 | 薄膜封装层、有机发光二极管器件及其制作方法 |
CN113410413B (zh) * | 2021-06-18 | 2024-04-19 | 北京京东方技术开发有限公司 | 柔性拼接模组、显示装置及其制备方法 |
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US9362528B2 (en) | 2016-06-07 |
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