WO2016204257A1 - パワー半導体モジュール、流路部材及びパワー半導体モジュール構造体 - Google Patents
パワー半導体モジュール、流路部材及びパワー半導体モジュール構造体 Download PDFInfo
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- WO2016204257A1 WO2016204257A1 PCT/JP2016/068018 JP2016068018W WO2016204257A1 WO 2016204257 A1 WO2016204257 A1 WO 2016204257A1 JP 2016068018 W JP2016068018 W JP 2016068018W WO 2016204257 A1 WO2016204257 A1 WO 2016204257A1
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- semiconductor module
- power semiconductor
- terminal
- power
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- H01L2924/19107—Disposition of discrete passive components off-chip wires
Definitions
- the present invention relates to a power semiconductor module including a cooler that circulates and circulates a coolant for cooling a semiconductor element, a flow path member combined with the power semiconductor module, and a power semiconductor module structure.
- Power conversion devices are used for energy saving in devices that use motors such as hybrid vehicles and electric vehicles.
- a power semiconductor module is widely used for this power converter.
- the power semiconductor module includes a power semiconductor element for controlling a large current.
- the power semiconductor element generates a large amount of heat when controlling a large current. Further, since the power semiconductor module is required to be reduced in size and weight and the output density tends to increase, in the power semiconductor module including a plurality of power semiconductor elements, the cooling method affects the power conversion efficiency.
- a power semiconductor module that includes a liquid cooling type cooling body and cools the heat generated by the power semiconductor element by this cooling body.
- the cooling body of the power semiconductor module includes a metal base plate that transfers heat generated by the power semiconductor element, a heat sink that is bonded to the back surface of the metal base plate, and a cooling case that is bonded to the metal base plate and accommodates the heat sink. It has a structure that allows the coolant to flow through the space in the cooling case through the inlet and outlet formed in the cooling case (Patent Document 1). For example, a nipple is attached to the introduction port and the discharge port, and an external pipe or an external hose is connected to the nipple, respectively.
- Hybrid vehicles and electric vehicles have limited space for mounting power semiconductor modules. Therefore, it may not be easy to attach the power semiconductor module and attach the external pipe to the inlet and outlet of the cooling case. In addition, it is necessary to separately perform the work of attaching the power semiconductor module and the work of attaching the external pipe to the inlet and outlet of the cooling case, which takes time.
- Some cooling members of a power semiconductor module include a connection plate in an inlet passage and an outlet passage in order to facilitate connection with an additional cooling member or a termination plate (Patent Document 2).
- this cooling member is provided with an inlet passage and an outlet passage on the side surface of the plastic base having the top surface on which the semiconductor module is mounted, the semiconductor module to which the cooling member is attached becomes bulky.
- the connection plate of the cooling member is not connected to the external pipe, the ease of mounting the external pipe has not been sufficient.
- the present invention has been made in view of the above points, and can easily connect the power semiconductor module to the inlet and outlet of the cooling body, and can easily attach the power semiconductor module. It is an object of the present invention to provide a power semiconductor module that can be used, a flow path member combined with the power semiconductor module, and a power semiconductor module structure.
- a power semiconductor module includes a metal base plate having a first surface and a second surface, a laminated substrate bonded to the first surface and having a third surface and a fourth surface, and a semiconductor element mounted on the third surface
- a resin case disposed on the first surface side of the metal base plate and surrounding the laminated substrate and the semiconductor element, and a cooling case.
- the cooling case has a bottom wall and a side wall formed around the bottom wall, and one end of the side wall is joined to the second surface side of the metal base plate, and the metal base plate, the bottom wall, and the side wall The coolant can be circulated in the space surrounded by.
- the cooling case has an inlet portion and an outlet portion for a coolant that is connected to either the bottom wall or the side wall and is disposed along a peripheral edge of the second surface of the metal base plate.
- a first flange disposed on the inlet side and a second flange disposed on the outlet side of the outlet portion are provided.
- the following flow path member is provided as another embodiment of the present invention. It is a flow path member combined with the power semiconductor module.
- the power semiconductor module has a metal base plate, a bottom wall and a side wall formed around the bottom wall, and one end of the side wall is joined to a back surface of the metal base plate, and the metal base plate, the bottom
- a cooling case capable of circulating a coolant in a space surrounded by the wall and the side wall; Further, the cooling case has an inlet portion and an outlet portion of a coolant that is connected to either the bottom wall or the side wall and is disposed along a peripheral edge of the back surface of the metal base plate.
- a first flange disposed on the inlet side and a second flange disposed on the outlet side of the outlet portion are provided.
- the flow path member includes a first connection portion that can be connected to the first flange, a second connection portion that can be connected to the second flange, and a second connection portion that is connected to the first connection portion and can flow the coolant.
- 1 flow path and the 2nd flow path which can be connected to the 2nd connection part and can distribute the cooling fluid, and may be arranged facing the bottom of the cooling case.
- the power semiconductor module structure of the present invention in which the power semiconductor module and the flow path member are combined has the following aspects.
- the power semiconductor module can be easily connected to the inlet and outlet of the cooling body, and the power semiconductor module can be easily attached.
- FIG. 4 is a sectional view taken along line IV-IV in FIG. 1.
- FIG. 1 is a perspective view showing an appearance of an embodiment of a power semiconductor module of the present invention.
- FIG. 2 is a perspective view of the power semiconductor module of FIG. 1 viewed from the back side.
- a power semiconductor module 1 shown in FIGS. 1 and 2 is a 6-in-1 type power semiconductor module constituting an inverter circuit.
- the power semiconductor module 1 accommodates a metal base plate 12 and a semiconductor chip 16, a resin case 11 having a bottom surface bonded to the front surface of the metal base plate 12, and a cooling bonded to the back surface of the metal base plate 12. Case 13 is provided.
- External terminals 14A to 14E protrude from the inside of the resin case 11 along the periphery of the upper surface of the resin case 11. Further, the resin case 11 is formed with a through hole 11a penetrating in the thickness direction. A total of eight through-holes 11a are formed in the vicinity of both ends of the longitudinal edge portion of the upper surface of the resin case 11 and at two places spaced between the both ends. Of these through-holes 11a, two through-holes 11a formed near the center in the longitudinal direction at one end portion on the long side of the resin case 11 are first bolts formed in a flange 13g1 of the cooling case 13 described later. It is the 1st through-hole which can penetrate a hole. In addition, two through holes 11a formed near the center in the longitudinal direction at the other end portion on the long side of the resin case 11 pass through a second bolt hole formed in a flange 13g2 of the cooling case 13 described later. 2 through holes.
- the metal base plate 12 is a rectangular plate having a front surface, that is, a first surface and a back surface opposite to the front surface, that is, a second surface.
- the metal base plate 12 is approximately the same size as the resin case 11.
- the metal base plate 12 has bolt holes 12a penetrating in the thickness direction.
- the bolt holes 12a are formed at the same intervals as the through holes 11a formed in the resin case 11, and are arranged at the same positions as the through holes 11a.
- the cooling case 13 joined to the back surface of the metal base plate 12 has a bottom wall 13a and a side wall 13b formed around the bottom wall 13a, and an upper end side is open.
- an internal space surrounded by the metal base plate 12 and the cooling case 13 is formed.
- fins 17 as heat sinks are arranged in this internal space.
- the metal base plate 12, the cooling case 13 and the fins 17 constitute a cooling body for the semiconductor chip 16.
- the fins 17 are not limited to the thin plate shape shown in the figure, but may be a pin shape.
- the cooling space supplied from the outside can circulate through the internal space of the cooling case 13.
- the cooling case 13 has an inlet portion 13c and an outlet portion 13d for the coolant at the center of the longitudinal edge.
- the inlet portion 13 c and the outlet portion 13 d are connected to the side wall of the cooling case 13 and are disposed along the periphery of the back surface of the metal base plate 12.
- the inlet portion 13c has an inlet 13e on the bottom surface
- the outlet portion 13d has a discharge port 13f on the bottom surface. These bottom surfaces are disposed on the opposite side to the metal base plate 12.
- the cooling case 13 includes a flange 13g1 that is a first flange on the inlet 13e side of the inlet portion 13c.
- the cooling case 13 includes a flange 13g2 that is a second flange on the outlet 13f side of the outlet portion 13d.
- the flanges 13g1 and 13g2 are substantially elliptical plates, and are arranged such that the major axis direction extends along the long side direction of the metal base plate.
- the flanges 13g1 and 13g2 may be roughly diamond-shaped plates.
- the flanges 13g1 and 13g2 can be joined by brazing, for example, with a washer made of a clad material of a brazing material and an aluminum material around the introduction port 13e and the discharge port 13f. In addition to the washer, the flanges 13g1 and 13g2 may be fixed by bonding.
- the flanges 13g1 and 13g2 are made of a material and a structure having sufficient strength for bolt fastening.
- the flanges 13g1 and 13g2 have main surfaces on the side far from the metal base plate 12. Each main surface of the flanges 13g1 and 13g2 may be parallel to the front surface of the metal base plate 12, or may be a flat surface.
- the flange 13g1 and the flange 13g2 may be disposed at positions opposite to each other with the cooling case 13 interposed therebetween.
- the flange 13g1 includes an opening 13eg that is a first opening disposed to face the introduction port 13e.
- the flange 13g2 includes an opening 13fg that is a second opening disposed so as to face the discharge port 13f.
- two flanges 13g1 are arranged with the opening 13eg interposed therebetween, and a bolt hole 13h which is a set of first bolt holes is formed.
- Two flanges 13g2 are arranged with an opening 13fg interposed therebetween, and a bolt hole 13h which is a set of second bolt holes is formed.
- bolt holes 13h are formed at the same intervals as the bolt holes 12a formed in the metal base plate 12, and are arranged at the same positions as the bolt holes 12a. These bolt holes 13h connect the bolt holes for attaching the power semiconductor module 1 to the flow path member 31 (see FIG. 7), and the inlet and outlet of the power semiconductor module to the flow path of the flow path member 31. Also serves as a bolt hole.
- Each of the flanges 13g1 and 13g2 may include one or more sets of bolt holes 13h.
- a line segment connecting a pair of bolt holes of the flange 13g1 joined to the inlet portion 13c and a line segment connecting a set of bolt holes of the flange 13g2 joined to the outlet portion 13d are substantially parallel to each other. Is preferred. In the illustrated embodiment, the line segments extend substantially along the long side direction of the metal base plate, and are therefore substantially parallel.
- the flange 13g1 and the flange 13g2 may be disposed with two opposing side walls 13b among the four side walls 13b of the cooling case 13 interposed therebetween.
- FIG. 3 shows an exploded perspective view of the power semiconductor module 1.
- the resin case 11 is made of an insulating resin such as PPS resin or urethane resin, and has a frame shape having an opening in the center from the top surface to the bottom surface.
- External terminals 14A to 14E are integrally attached to the resin case 11 by insert molding or the like.
- the through hole 11a can be formed at the time of insert molding.
- the metal base plate 12 has a rectangular front surface and back surface that are substantially the same size as the resin case 11.
- the metal base plate 12 is made of a metal having good thermal conductivity, such as aluminum or an aluminum alloy, or a composite material (cladding material) of these metals and a brazing material.
- the back surface of the insulating substrate 15 as a specific example of the laminated substrate, that is, the fourth surface is bonded by a bonding material such as solder, brazing material, or sintered material.
- three insulating substrates 15 are arranged in a line along the longitudinal direction at the center of the metal base plate 12 in the short direction.
- Each insulating substrate 15 has four semiconductor chips 16 mounted on the front surface of one insulating substrate 15, that is, the third surface.
- the illustrated semiconductor chip 16 of the present embodiment is an example of a reverse conducting IGBT (RC-IGBT) in which IGBT and FWD are integrated into one chip.
- RC-IGBT reverse conducting IGBT
- a total of two sets of two semiconductor chips connected in parallel on one insulating substrate 15 constitute an upper arm and a lower arm in one phase constituting the inverter circuit.
- the upper arm is composed of two semiconductor chips 16A that are first semiconductor elements connected in parallel.
- the lower arm is constituted by two semiconductor chips 16B which are second semiconductor elements connected in parallel.
- the three insulating substrates 15 of the metal base plate 12 constitute the U phase, V phase, and W phase of the inverter circuit.
- a set of external terminals 14 ⁇ / b> A, 14 ⁇ / b> D, 14 ⁇ / b> E is electrically connected to the U-phase semiconductor chip 16.
- a set of external terminals 14B, 14D, and 14E is electrically connected to the V-phase semiconductor chip 16.
- a set of external terminals 14C, 14D, and 14E are electrically connected to the W-phase semiconductor chip 16.
- a through hole 11a may be disposed between the external terminals 14A and 14B.
- a through hole 11a may be disposed between the external terminals 14B and 14C.
- These through holes 11a correspond to a set of bolt holes 13h of the flange 13g2. Further, a through hole 11a may be arranged between the U-phase external terminals 14D and 14E and the V-phase external terminals 14D and 14E. A through hole 11a may be disposed between the V-phase external terminals 14D and 14E and the W-phase external terminals 14D and 14E. These through holes 11a correspond to a set of bolt holes 13h of the flange 13g1.
- the material of the cooling case 13 is the same as that of the metal base plate 12 because the thermal expansion coefficients of both can be made the same.
- Fins 17 as heat sinks are accommodated in a substantially rectangular space surrounded by the bottom wall 13a and the side wall 13b.
- the fins 17 have a thin plate shape, and a plurality of fins 17 are arranged at intervals along the short direction of the cooling case 13.
- the upper ends of the fins 17 are joined to the back surface of the metal base plate 12 by brazing. Thereby, the heat generated from the semiconductor chip 16 is conducted to the fins 17 through the insulating substrate 15 and the metal base plate 12.
- a flow path 13i of the coolant introduced from the outside through the introduction port 13e is formed between the inlet portion 13c and the fin. Further, a channel 13j is formed between the outlet portion 13d and the fins 17 for discharging the coolant flowing through the gaps between the fins toward the discharge port 13f.
- the cooling water supplied from the inlet portion 13c flows through the gaps of the fins 17 through the flow paths 13i, and flows through the flow paths 13j. It passes through the outlet 13f of the outlet 13d.
- FIG. 4 is a sectional view taken along line IV-IV in FIG.
- the insulating substrate 15 includes a ceramic insulating plate 15a, a circuit board 15b made of copper foil or the like selectively formed on the front surface of the ceramic insulating plate 15a, and copper formed on the back surface of the ceramic insulating plate 15a.
- a metal plate 15c made of foil or the like is bonded together.
- the circuit board 15b and the semiconductor chip 16 are joined by, for example, solder 18 as a joining material.
- the joining of the metal plate 15c and the metal base plate 12 is made of, for example, solder 18 as a joining material.
- a brazing material or a sintered material may be used as the bonding material.
- the insulating substrate 15 and the semiconductor chip 16 in the resin case 11 are sealed with a sealing material made of an insulating resin such as an epoxy resin or an insulating gel such as silicone in order to enhance the insulating property.
- a sealing material made of an insulating resin such as an epoxy resin or an insulating gel such as silicone in order to enhance the insulating property.
- FIG. 4 illustration of bonding wires and the like electrically connected to the electrodes formed on the surface of the semiconductor chip 16 is omitted.
- the sealing material injected into the frame of the resin case 11 and the lid attached to the upper surface of the resin case 11 are also omitted.
- FIG. 5 shows a plan view of the power semiconductor module 1 of FIG. In order to facilitate understanding, this plan view shows a state in which the insulating substrate 15 and the semiconductor chip 16 disposed in the resin case 11 are visible without showing a lid, a sealing material, and a bonding wire. .
- the power semiconductor module 1 is a 6-in-1 type power semiconductor module that constitutes an inverter circuit as described above. This inverter circuit is shown in FIG.
- the four semiconductor chips 16 bonded to one insulating substrate 15 constitute an upper arm and a lower arm in one phase as described above. More specifically, in FIG. 5, two semiconductor chips 16A arranged along the short side direction of the metal base plate 12 constitute an upper arm, and the semiconductor chip 16B constitutes a lower arm.
- Two semiconductor chips 16 ⁇ / b> A corresponding to the upper arm are arranged along the moving direction of the coolant flowing between the fins 17 immediately below the metal base plate 12.
- the two semiconductor chips 16B corresponding to the lower arm are arranged along the moving direction of the coolant.
- the power semiconductor module 1 of the present embodiment includes flanges 13g1 and 13g2 at the inlet portion 13c and the outlet portion 13d of the cooling case 13, respectively, a member having an external flow path without using a pipe, that is, a flow path
- the member 31 can be connected. Therefore, even if it is a vehicle-mounted power semiconductor module with a limited installation space, the power semiconductor module can be easily attached. Further, since pipes and hoses are not used, stress is not applied to the connection part and the cooling body for the handling of the pipes and hoses, and the deterioration of reliability can be prevented.
- a pair of bolt holes 13h is formed on the flange 13g1 so as to be disposed with an opening 13eg connected to the inlet 13e interposed therebetween.
- the flange 13g2 also has a pair of bolt holes 13h that are arranged with two openings 13fg connected to the discharge port 13f. These bolt holes 13 h are arranged at the same positions at the same intervals as the through holes 11 a of the resin case 11 and the bolt holes 12 a of the metal base plate 12.
- the bolt holes 13h, the through holes 11a, and the bolt holes 12a may be arranged so that the bolts can penetrate in the thickness direction from the upper surface to the bottom surface of the power semiconductor module 1.
- the three holes are arranged so that the axes of the bolt hole 13h, the through hole 11a, and the bolt hole 12a are coaxial.
- the cross-sectional shape of each hole is a circle, an ellipse, an ellipse or the like, preferably a circle.
- the flanges 13g1 and 13g2 are provided with one or more bolt holes 13h across the opening 13eg connected to the inlet 13e or the opening 13fg connected to the outlet 13f, so that the inlet 13e and the outlet 13f Since the bolt fastening force for connecting the flow path of the flow path member acts evenly in the vicinity of the inlet 13e and the outlet 13f, it is possible to prevent liquid leakage near the inlet 13e or the outlet 13f. it can.
- the flanges 13g1 and 13g2 are disposed on the bottom surface side of the inlet portion 13c and the bottom surface side of the outlet portion 13d, respectively.
- the power semiconductor module of the type in which the coolant flows from the bottom surface side of the cooling case 13 can be reduced in height, which is advantageous for thinning.
- the flange 13g1 is provided at the tip of the inlet portion 13c and the flange 13g2 is provided at the tip of the outlet portion 13d.
- members other than the flange are not excluded, It may be an attachment having a similar function.
- FIG. 7 is a perspective view of the power semiconductor module 1 and the flow path member 31. A cross section is shown partially.
- the power semiconductor module 1 can be the same as the power semiconductor module 1 shown in FIGS. Therefore, in FIG. 7, the power semiconductor module 1 and its members are denoted by the same reference numerals as those in FIGS. 1 to 6, and the redundant description is omitted below.
- the flow path member 31 is a substantially rectangular parallelepiped in this embodiment shown in FIG. 7, and is attached so that the bottom surface of the cooling case 13 of the power semiconductor module 1 faces the top surface thereof.
- a protrusion 31a1 that contacts the flange 13g1 of the power semiconductor module 1
- a protrusion 31a2 that contacts the flange 13g2
- a portion 31d is formed.
- these convex portions 31 a 1, 31 a 2, and 31 d are not essential on the upper surface of the flow path member 31.
- the portion where the flange 13g1 of the power semiconductor module 1 abuts on the upper surface of the flat flow path member 31 may be used as the first connection portion.
- the portion of the upper surface of the flat flow path member 31 with which the flange 13g2 abuts may be used as the second connection portion.
- a protrusion including the bolt hole 12 a of the metal base plate 12 may abut on the upper surface of the flat flow path member 31.
- the convex portion 31a1 that contacts the flange 13g1 is formed with an opening 31b1 of the coolant introduction flow passage 31f formed inside the flow passage member 31, and is connected to the introduction port 13e via the opening 13eg of the flange 13g1. To do.
- an opening 31b2 of the coolant discharge passage 31g is formed in the convex portion 31a2 that contacts the flange 13g2, and is connected to the discharge port 13f through the opening 13fg of the flange 13g2.
- the coolant introduction flow path 31 f and the discharge flow path 31 g can be arbitrarily arranged inside the flow path member 31.
- a pair of female screw holes 31c for fastening a bolt are formed in the convex portion 31a1 with the opening 31b1 interposed therebetween.
- a pair of female screw holes 31c are also arranged on the convex portion 31a2 with the opening 31b2 interposed therebetween.
- bolt is formed in the convex part 31d.
- a pair of convex portions 31d are arranged with the convex portion 31a1 interposed therebetween, and the female screw hole 31c and the female screw hole 31e are aligned.
- a pair of convex portions 31d are arranged with the convex portion 31a1 interposed therebetween.
- These female screw holes 31 c and 31 e are arranged to face the through hole 11 a of the resin case 11 of the power semiconductor module 1, the bolt hole 12 a of the metal base plate 12, and the bolt hole 13 h of the cooling case 13.
- the power semiconductor module 1 is fixed to the flow path member 31 by screwing the male screw and female screw holes of the bolts penetrating these bolt holes, and the introduction port 13e and the discharge port 13f of the power semiconductor module 1 are respectively provided.
- the flow path member 31 is connected to the opening 31b1 of the introduction flow path 31f and the opening 31b2 of the discharge flow path 31g.
- the flow path member 31 is a substantially rectangular parallelepiped in the example illustrated in FIG. 7, but the shape is not limited as long as the power semiconductor module 1 can be attached.
- the flow path member 31 is not limited to an independent member having the coolant introduction flow path 31f and the discharge flow path 31g, and may be, for example, an automobile engine member or a part of a member for cooling the engine. .
- FIG. 8 is a front view of the power semiconductor module structure 3
- FIG. 9 is a partially enlarged view of a portion IX in FIG. 8 and 9, the power semiconductor module 1 and the flow path member 31 are denoted by the same reference numerals as those in FIGS. 1 to 7, and redundant descriptions are omitted below.
- the power semiconductor module structure 3 shown in FIGS. 8 and 9 is obtained by fastening and fixing the power semiconductor module 1 and the flow path member 31 of the second embodiment with bolts 33. As shown in FIG.
- an O-ring 32 is disposed between the flange 13g1 and the convex portion 31a1, thereby preventing liquid leakage.
- an O-ring 32 is also disposed between the flange 13g2 and the convex portion 31a2. It is preferable that the O-ring 32 is formed in a groove on the surface of the convex portions 31a1 and 31a2 and accommodated in the groove.
- the power semiconductor module structure 3 of the present embodiment it is possible to attach the power semiconductor module 1 without using a pipe, or it is possible to reduce the labor of the installation work.
- FIG. 10A is a perspective view of the power semiconductor module 2 as viewed obliquely from above
- FIG. 10B is a perspective view of the power semiconductor module 2 as viewed from the back side.
- the power semiconductor module 2 shown in FIGS. 10A and 10B is different from the power semiconductor module 1 shown in FIGS. 1 and 2 in that a cooling case 23 having a bottom wall 23a and a side wall 23b has an inlet for a coolant.
- the part 23 c and the outlet part 23 d are located in the vicinity of the diagonal corners of the metal base plate 12.
- Flange 23g1 and 23g2 are provided at the leading ends of the inlet 23e of the inlet 23c and the outlet 13f of the outlet 23d, respectively.
- the flanges 23g1 and 23g2 have openings 23eg and 23fg, respectively, a pair of bolt holes 23h arranged with the opening 23eg interposed therebetween, and a pair of bolt holes 23h arranged with the opening 23fg interposed therebetween. And further comprising.
- One bolt hole 23h of the flange 23g1 is arranged with respect to the through hole 11a and the bolt hole 12a so that the bolt can penetrate in the thickness direction from the upper surface to the bottom surface of the power semiconductor module 1.
- One bolt hole 23h of the flange 23g2 is similarly arranged.
- the power semiconductor module 2 of the present embodiment is provided with flanges 23g1 and 23g2 at the tip of the inlet portion 23c and the tip of the outlet portion 23d of the cooling case 23 in the same manner as the power semiconductor module 1 of the first embodiment, Etc., it is possible to connect to the flow path member suitable for the position of the tip of the inlet 23c and the outlet 23d of the power semiconductor module 2. Therefore, even if it is a vehicle-mounted power semiconductor module with a limited installation space, the power semiconductor module can be easily attached.
- the positions of the inlet and outlet portions of the cooling case having the flange in the power semiconductor module of the present invention are not particularly limited. .
- FIGS. 11A and 11B For comparison, a conventional power semiconductor module 100 is shown in FIGS. 11A and 11B.
- FIG. 11A is a perspective view of the power semiconductor module 100 as viewed from above
- FIG. 11B is a perspective view of the power semiconductor module 100 as viewed from the back.
- an introduction side pipe 114 and a discharge side pipe 115 are attached to a cooling body 113.
- the power semiconductor module 100 including the pipe 114 and the pipe 115 is not easily attached and the hose is attached to the pipe 114 and the pipe 115.
- the mounting operation of the power semiconductor module 100 and the mounting operation of the hose to the pipe 114 and the pipe 115 are separate, it takes time and effort. The effect of the present invention is apparent by comparing the conventional power semiconductor module 100 shown in FIGS. 11A and 11B with the power semiconductor modules 1 and 2 of the first and fourth embodiments of the present invention described above.
- FIG. 12 is a plan view of the power semiconductor module 4.
- the structure below the resin case 11 can include the metal base plate 12 and the cooling case 13 as in the power semiconductor module 1 shown in FIGS.
- the front surface of the metal base plate 12 is bonded to the bottom surface of the resin case 11, and the cooling case 13 is bonded to the back surface of the metal base plate 12.
- the fins arranged in the cooling case 13 have a thin plate shape, and a plurality of fins can be arranged along the short direction of the cooling case 13 at intervals.
- the resin case 11 is made of an insulating resin such as PPS resin or urethane resin, and has a frame shape having an opening in the center from the top surface to the bottom surface on the opposite side.
- the upper surface is the front side of the paper
- the bottom surface is the rear side of the paper.
- External terminals 14A, 14B, 14C, 141D, 141E, 142D, 142E, 143D, and 143E are integrally attached to the resin case 11 by insert molding or the like.
- the external terminal 14A is a U terminal
- the external terminal 14B is a V terminal
- the external terminal 14C is a W terminal
- the external terminals 141D, 142D, and 143D are positive terminals (P terminals)
- the external terminals 141E, 142E, and 143E are negative terminals (N terminals). It is.
- the metal base plate 12 has a rectangular front surface and a reverse surface opposite to the resin case 11.
- the metal base plate 12 is made of a metal having good thermal conductivity, such as aluminum or an aluminum alloy, or a composite material (cladding material) of these metals and a brazing material.
- the back surface of the insulating substrate 15 as a specific example of the laminated substrate, that is, the fourth surface is bonded by a bonding material such as solder, brazing material, or sintered material.
- the insulating substrate 15 has a metal plate (not shown) formed on the lower surface of the ceramic insulating plate 15a, and circuit boards 15ba, 15bb, 15bc, 15bd, 15be, and 15bf formed on the upper surface of the ceramic insulating plate 15a. Further, the semiconductor chips 16A1 and 16A2 are arranged on the circuit board 15bf via solder, respectively. Further, on the circuit board 15bb, the semiconductor chips 16B1 and 16B2 are respectively arranged via solder.
- Such an insulating substrate 15 is accommodated in the opening of the resin case 11.
- a wire 19 is connected between the electrodes.
- the main electrodes formed on the front surfaces of the semiconductor chips 16A1 and 16A2 on the circuit board 15bf are connected to the circuit board 15bb by wires 19.
- a main electrode formed on the front surface of the semiconductor chips 16B1 and 16B2 on the circuit board 15bb and the circuit board 15be are connected by a wire 19.
- the power semiconductor module 4 is a 6 in 1 type power semiconductor module that constitutes an inverter circuit.
- An example of this inverter circuit is shown in FIG.
- Four semiconductor chips 16A1, 16A2, 16B1, and 16B2 bonded to one insulating substrate 15 constitute a pair of upper arm Au and lower arm Al, that is, a leg in one phase.
- the two semiconductor chips 16A1 and 16A2 arranged along the short side direction of the metal base plate 12 are one phase, for example, the upper arm Au in the U phase, constituting the inverter circuit.
- the semiconductor chip 16B1 and the semiconductor chip 16B2 constitute the lower arm Al.
- Two semiconductor chips 16 ⁇ / b> A ⁇ b> 1 and 16 ⁇ / b> A ⁇ b> 2 corresponding to the upper arm Au are arranged along the moving direction of the coolant flowing between the fins 17 immediately below the metal base plate 12.
- two semiconductor chips 16B1 and 16B2 corresponding to the lower arm Al are arranged along the moving direction of the coolant.
- each insulating substrate 15 has four semiconductor chips 16A1, 16A2, 16B1, and 16B2 mounted on the front surface of one insulating substrate 15, that is, the third surface.
- the illustrated semiconductor chips 16A1, 16A2, 16B1, and 16B2 are all examples of a reverse conducting IGBT (RC-IGBT) in which IGBT and FWD are integrated into one chip.
- RC-IGBT reverse conducting IGBT
- a total of two sets of two semiconductor chips that are electrically connected in parallel on one insulating substrate 15 constitute an upper arm Au and a lower arm Al in one phase constituting the inverter circuit.
- the upper arm Au is composed of two semiconductor chips 16A1 and 16A2 which are first semiconductor elements connected in parallel on the circuit board 15bf.
- the lower arm Al is composed of two semiconductor chips 16B1 and 16B2 which are second semiconductor elements connected in parallel on the circuit board 15bb.
- the three insulating substrates 15 of the metal base plate constitute the U phase, V phase, and W phase of the inverter circuit.
- Each of the U phase, the V phase, and the W phase includes a pair of legs L U , L V , and L W including an upper arm Au and a lower arm Al.
- the legs L U , L V , and L W are respectively formed on the insulating substrate 15, the first semiconductor element that constitutes the upper arm Au, the second semiconductor element that constitutes the lower arm Al, the first semiconductor element, and the second semiconductor element.
- the specific one phase of the U phase, the V phase, and the W phase will be described separately from one phase different from the specific one phase.
- the specific one phase includes a first arm composed of an upper arm and a lower arm.
- One phase that includes a set (leg) and is different from the specific one phase includes a second set (leg) that includes an upper arm and a lower arm.
- the insulating substrate 15 of the first leg is changed to the first phase. This is referred to as one laminated substrate, and the second leg insulating substrate 15 is referred to as a second laminated substrate.
- a semiconductor element mounted on the first laminated substrate and constituting the upper arm is referred to as a first semiconductor element
- a semiconductor element constituting the lower arm is referred to as a second semiconductor element
- a semiconductor element mounted on the second laminated substrate and constituting the upper arm is referred to as a third semiconductor element
- a semiconductor element constituting the lower arm is referred to as a fourth semiconductor element.
- a power supply terminal that supplies power to the first semiconductor element and the second semiconductor element is referred to as a first power supply terminal
- a power supply terminal that supplies power to the third semiconductor element and the fourth semiconductor element is referred to as a second power supply terminal.
- the power semiconductor module 4 of the present embodiment includes a first set including an upper arm and a lower arm, and a second set including an upper arm and a lower arm.
- the first set includes at least a first laminated substrate as a laminated substrate, a first semiconductor element constituting an upper arm and a second semiconductor element constituting a lower arm as semiconductor elements, and the first semiconductor element and the second semiconductor. And a first power supply terminal for supplying power to the element.
- the second set includes at least a second laminated substrate as a laminated substrate, a third semiconductor element constituting an upper arm and a fourth semiconductor element constituting a lower arm, and a third semiconductor element and a fourth semiconductor element as semiconductor elements. And a second power supply terminal for supplying power to the power supply.
- the power terminals of the U-phase leg are respectively a positive terminal 141D that can be connected to the positive side of the external power source and a negative terminal 141E that can be connected to the negative side of the external power source. May be included.
- Each of the power terminals of the V-phase leg may include a positive terminal 142D that can be connected to the positive side of the external power supply and a negative terminal 142E that can be connected to the negative side of the external power supply.
- the power terminals of the W-phase leg may include a positive terminal 143D that can be connected to the positive side of the external power supply and a negative terminal 143E that can be connected to the negative side of the external power supply.
- the U-phase leg L U is the first leg and one of the V-phase leg L V and the W-phase leg L W , for example, the V-phase leg L V is the second leg
- the positive terminal 141D is a first plus terminal
- minus terminal 141E is a first minus terminal
- plus terminal 143D is a second plus terminal
- minus terminal 142E is a second minus terminal.
- the U-phase plus terminal 141D, the V-phase plus terminal 142D, and the W-phase plus terminal 143D are different from each other, independent, and may have the same shape.
- the U-phase minus terminal 141E, the V-phase minus terminal 142E, and the W-phase minus terminal 143E may be different from each other and independent, and may have the same shape.
- the U-phase plus terminal 141D, the V-phase plus terminal 142D, and the W-phase plus terminal 143D may have the same dimensions, and the U-phase minus terminal 141E, the V-phase minus terminal 142E, and the W-phase minus terminal 143E may have the same dimensions.
- the U-phase plus terminal 141D includes a body portion 141Db and a leg portion 141Dl.
- the V-phase plus terminal 142D includes a trunk portion 142Db and a leg portion 142Dl.
- the W-phase plus terminal 143D includes a body portion 143Db and a leg portion 143Dl.
- each of the leg portions 141Dl, 142Dl, and 143Dl includes three ribbon-like members, and the ribbon-like members are connected to the body portions 141Db, 142Db, and 143Db. Three ribbon-like members are arranged in parallel at each terminal.
- the negative terminal 141E for U phase includes a body portion 141Eb and a leg portion 141E1.
- the V-phase negative terminal 142E includes a trunk portion 142Eb and a leg portion 142E1.
- the W-phase negative terminal 143E includes a body portion 143Eb and a leg portion 143El.
- each of the leg portions 141E1, 142E1, and 143E1 includes three ribbon-like members, and the ribbon-like members are connected to the body portions 141Eb, 142Eb, and 143Eb. Three ribbon-like members are arranged in parallel at each terminal.
- the extending direction of the ribbon-shaped member of the U-phase plus terminal 141D, that is, the leg portion 141D1, and the extending direction of the ribbon-shaped member of the U-phase minus terminal 141E, that is, the leg portion 141E1, may be arranged in parallel.
- the extending direction of the leg 142Dl of the V-phase plus terminal 142D and the leg 142El of the V-phase minus terminal 142E may be arranged in parallel.
- the extending direction of the leg portion 143Dl of the W-phase plus terminal 143D and the leg portion 143El of the W-phase minus terminal 143E may be arranged in parallel.
- the U-phase plus terminal 141D, the V-phase plus terminal 142D, and the W-phase plus terminal 143D are arranged so that the extending direction of the leg 141Dl and the extending direction of the leg 142Dl and the leg 143Dl are parallel to each other. May be.
- the U-phase minus terminal 141E, the V-phase minus terminal 142E, and the W-phase minus terminal 143E are arranged so that the extending direction of the leg portion 141El and the extending direction of the leg portion 142El and the leg portion 143El are parallel to each other. May be. Since the extending directions of the leg portions of the power supply terminals are parallel to each other, the inductance can be reduced.
- a capacitor such as a film capacitor
- a capacitor may be connected to each of the power terminals of the legs L U , L V , and L W. Independent film capacitors are connected between the U-phase plus terminal 141D and the minus terminal 141E, between the V-phase plus terminal 142D and the minus terminal 142E, and between the W-phase plus terminal 143D and the minus terminal 143E. Alternatively, a common film capacitor may be connected.
- a common film capacitor 25 is connected to the circuit diagram shown in FIG. 14 is provided with a film capacitor 25A between a U-phase plus terminal 141D and a minus terminal 141E, and a V-phase plus terminal 142D and a minus terminal 142E with a film capacitor 25B.
- a film capacitor 25C is provided between the W-phase plus terminal 143D and the minus terminal 143E.
- the illustrated film capacitor 25A, film capacitor 25B, and film capacitor 25C are independent film capacitors.
- the film capacitor 25A, the film capacitor 25B, and the film capacitor 25C may be accommodated in a case or the like and integrated.
- 14 shows a mode in which the inside of the resin case 11 of the power semiconductor module 4 shown in FIG. 12 is sealed with a sealing material, and the upper end of the opening of the resin case 11 is covered with the lid 20. Yes.
- the total capacitance of the capacitors is preferably 100 ⁇ F to 3000 ⁇ F, and preferably 400 ⁇ F to 600 ⁇ F in total.
- the power semiconductor module 4 of this embodiment includes a single positive terminal common to the U phase, the V phase, and the W phase, and a U phase by providing each phase leg with a power supply terminal including a plus terminal and a minus terminal independently.
- the spike voltage generated during the inverter operation can be reduced. More specifically, in a conventional power semiconductor module having a three-phase inverter circuit and having a smoothing capacitor connected between the positive terminal and the negative terminal, the spike voltage is different from that of one specific phase and the other phase. This occurs in a superimposed manner between the positive terminal and the negative terminal at the time of turn-off.
- the length of the plus terminal and the minus terminal of each leg inside the power semiconductor module 4 is provided by providing a pair of a plus terminal and a minus terminal independently for each phase. Since the distance from the positive terminal and the negative terminal of each leg to the capacitor can be shortened, the spike voltage can be reduced as compared with the prior art.
- FIG. 15 is a graph showing the spike voltage measurement results of the power semiconductor module 4 of this embodiment.
- FIG. 16 is a graph showing a measurement result of spike voltage of a conventional power semiconductor module.
- the superimposed spike voltage ⁇ V PVNV generated at the V-phase power supply terminal generated at the U-phase turn-off time uses a common power supply terminal for the three phases. It is smaller than the conventional module. In the illustrated example, even when the switching speed at turn-off is about 1.5 times faster than that of the conventional module, ⁇ V PVNV is about 1/5, that is, about 20V.
- the power semiconductor module 4 of the present embodiment can include the same cooler as the power semiconductor module 1 of the first embodiment. Therefore, the power semiconductor module can be easily attached even when it is used for in-vehicle applications where the installation space is limited.
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Abstract
Description
パワー半導体モジュールは、第1面及び第2面を備える金属ベース板と、前記第1面に接合され、第3面及び第4面を備える積層基板と、前記第3面に搭載された半導体素子と、前記金属ベース板の第1面側に配置され、前記積層基板及び前記半導体素子を囲む樹脂ケースと、冷却ケースとを備える。冷却ケースは、底壁及び前記底壁の周りに形成された側壁を有し、前記側壁の一端が前記金属ベース板の第2面側に接合され、前記金属ベース板、前記底壁及び前記側壁により囲まれた空間内に冷却液を流通可能である。前記冷却ケースは、前記底壁及び前記側壁のいずれかに接続するとともに前記金属ベース板の第2面の周縁に沿って配置された冷却液の入口部及び出口部を有し、前記入口部の導入口側に配置された第1フランジ及び前記出口部の排出口側に配置された第2フランジを備える。
上記パワー半導体モジュールに組み合わされる流路部材である。前記パワー半導体モジュールが、金属ベース板と、底壁及び前記底壁の周りに形成された側壁を有し、前記側壁の一端が前記金属ベース板の裏面に接合され、前記金属ベース板、前記底壁及び前記側壁により囲まれた空間内に冷却液を流通可能な冷却ケースとを備える。さらに、前記冷却ケースは、前記底壁及び前記側壁のいずれかに接続するとともに前記金属ベース板の裏面の周縁に沿って配置された冷却液の入口部及び出口部を有し、前記入口部の導入口側に配置された第1フランジ及び前記出口部の排出口側に配置された第2フランジを備える。前記流路部材は、前記第1フランジに接続し得る第1接続部と、前記第2フランジに接続し得る第2接続部と、前記第1接続部に接続し前記冷却液を流通可能な第1流路と、前記第2接続部に接続し前記冷却液を流通可能な第2流路とを備え、前記冷却ケースの底面に対向して配置され得る。
前記パワー半導体モジュールと、前記流路部材とを組み合わされてなるパワー半導体モジュール構造体。
図1は本発明のパワー半導体モジュールの一実施形態の外観を示す斜視図である。図2は、図1のパワー半導体モジュールを裏面側から見た斜視図である。図1及び図2に示すパワー半導体モジュール1は、インバータ回路を構成する6in1タイプのパワー半導体モジュールである。パワー半導体モジュール1は、金属ベース板12と、半導体チップ16を収容し、底面が金属ベース板12のおもて面に接着された樹脂ケース11と、金属ベース板12の裏面に接合された冷却ケース13とを備えている。
フランジ13g1は導入口13eに対向する様に配置された第1開口部である開口部13egを備える。フランジ13g2は排出口13fに対向する様に配置された第2開口部である開口部13fgを備える。さらにフランジ13g1は開口部13egを挟んで配置された2つで一組の第1ボルト孔であるボルト孔13hが形成されている。フランジ13g2は開口部13fgを挟んで配置された2つで一組の第2ボルト孔であるボルト孔13hが形成されている。これらのボルト孔13hは、金属ベース板12に形成されたボルト孔12aと同じ間隔で形成され、ボルト孔12aと同じ位置に配置されている。これらのボルト孔13hは、パワー半導体モジュール1を流路部材31(図7参照)に取り付けるためのボルト孔と、パワー半導体モジュールの導入口及び排出口を流路部材31の流路に接続するためのボルト孔とを兼ねる。フランジ13g1、13g2はそれぞれ一組以上のボルト孔13hを備えてもよい。
このようにボルト孔13h、貫通孔11a及びボルト孔12aを配置することにより、ボルトによりパワー半導体モジュールを流路部材31に締結固定するとともに、導入口13e及び排出口13fを流路部材31の流路に接続できるので、取り付け作業の手間を軽減することができ、また、ボルト数も低減できる。また、パワー半導体モジュール1を取り付けたときの剛性を向上させることができる。更に、パワー半導体モジュール1を固定するための領域と流路を接続するための領域とのトータルの領域を削減することができるので、パワー半導体モジュール1を小型化することができる。
実施形態1のパワー半導体モジュール1が取り付けられる流路部材31を、図7を用いて説明する。図7は、パワー半導体モジュール1及び流路部材31の斜視図である。部分的に断面を示している。図7において、パワー半導体モジュール1は、図1~図6に示したパワー半導体モジュール1と同一とすることができる。したがって、図7ではパワー半導体モジュール1及びその部材について図1~図6と同一の符号を付しており、以下では重複する説明を省略する。
流路部材31は、実施形態1のパワー半導体モジュール1と組み合わせることにより、パイプを用いることなくパワー半導体モジュール1を取り付けることができ、または取り付け作業の手間を軽減することができる。
実施形態1のパワー半導体モジュール1と実施形態2の流路部材31との組み合わせからなるパワー半導体モジュール構造体3を図8及び図9を用いて説明する。図8はパワー半導体モジュール構造体3の正面図であり、図9は、図8のIX部分の部分拡大図である。なお、図8及び図9ではパワー半導体モジュール1及び流路部材31について図1~図7と同一の符号を付しており、以下では重複する説明を省略する。
図8及び図9に示したパワー半導体モジュール構造体3は、パワー半導体モジュール1と実施形態2の流路部材31とを、ボルト33により締結固定したものである。図9に示すように、フランジ13g1と凸部31a1の間には、Oリング32が配置されていて、これにより液漏れを防止している。図示していないがフランジ13g2と凸部31a2の間にもOリング32が配置されている。Oリング32は、凸部31a1、31a2の表面に溝を形成して、この溝内に収容することが好ましい。
図10A及び図10Bを用いて、本発明の別の実施形態のパワー半導体モジュール2を説明する。図10Aはパワー半導体モジュール2を斜め上方から見た斜視図であり、図10Bはパワー半導体モジュール2を裏面側から見た斜視図である。
比較のために従来のパワー半導体モジュール100を図11A及び図11Bに示す。図11Aはパワー半導体モジュール100の外観を上方から見た斜視図であり、図11Bはパワー半導体モジュール100の外観を裏面から見た斜視図である。
図11A及び図11Bに示した従来のパワー半導体モジュール100と、前述した本発明の実施形態1、実施形態4のパワー半導体モジュール1、2との対比により本発明の効果は明らかである。
図12に、パワー半導体モジュール4の平面図を示す。なお、この平面図では理解を容易にするために、蓋及び封止材を図示せず樹脂ケース11内に配置された絶縁基板15及び半導体チップ16A1、16A2、16B1、16B2が見えている状態を示している。樹脂ケース11より下方の構造は、図1~3に示したパワー半導体モジュール1と同様に金属ベース板12及び冷却ケース13を備えることができる。具体的に、樹脂ケース11の底面には、金属ベース板12のおもて面が接着され、金属ベース板12の裏面には、冷却ケース13が接合されている。冷却ケース13に配置されたフィンは薄板形状であり、冷却ケース13の短手方向に沿って複数個がそれぞれ間隔を空けて配置されている構造とすることができる。
また、回路板15bf上の半導体チップ16A1、16A2のおもて面に形成された主電極と、回路板15bbとが、ワイヤ19により接続されている。回路板15bb上の半導体チップ16B1、16B2のおもて面に形成された主電極と、回路板15beとが、ワイヤ19により接続されている。
1個の絶縁基板15に接合された4個の半導体チップ16A1、16A2、16B1、16B2は、一相における一組の上アームAu及び下アームAl、すなわちレグを構成している。より具体的に、図12においては、金属ベース板12の短辺方向に沿って配置された2個の半導体チップ16A1及び半導体チップ16A2がインバータ回路を構成する一相、例えばU相における上アームAuを構成し、半導体チップ16B1及び半導体チップ16B2が下アームAlをそれぞれ構成している。上アームAuに対応する2個の半導体チップ16A1及び半導体チップ16A2が、金属ベース板12の直下でフィン17間を流れる冷却液の移動方向に沿って配置されている。下アームAlに対応する2個の半導体チップ16B1及び半導体チップ16B2も同様に冷却液の移動方向に沿って配置されている。これにより、上アームAuを構成する半導体チップ16A1及び半導体チップ16A2と、下アームAlを構成する半導体チップ16B1及び半導体チップ16B2との冷却効率を等しくすることができる。
U相用プラス端子141D、V相用プラス端子142D及びW相用プラス端子143Dは互いに異なり、独立しており、かつ同じ形状であってもよい。また、U相用マイナス端子141E、V相用マイナス端子142E及びW相用マイナス端子143Eは互いに異なり、独立しており、かつ同じ形状であってもよい。U相用プラス端子141D、V相用プラス端子142D及びW相用プラス端子143Dは同じ寸法であってもよく、また、U相用マイナス端子141E、V相用マイナス端子142E及びW相用マイナス端子143Eは同じ寸法であってもよい。
電源端子の脚部の延在方向がそれぞれ平行であることにより、インダクタンスを低減させることができる。
また、図14に平面図を示すパワー半導体モジュール4は、U相用プラス端子141D及びマイナス端子141Eの間にフィルムコンデンサ25Aが設けられ、V相用プラス端子142D及びマイナス端子142Eにフィルムコンデンサ25Bが設けられ、W相用プラス端子143D及びマイナス端子143Eの間にフィルムコンデンサ25Cが設けられている。図示するフィルムコンデンサ25A、フィルムコンデンサ25B及びフィルムコンデンサ25Cは、それぞれ独立したフィルムコンデンサである。フィルムコンデンサ25A、フィルムコンデンサ25B及びフィルムコンデンサ25Cは、ケース等に収容され一体とされてもよい。なお、図14の平面図は、図12に示したパワー半導体モジュール4の樹脂ケース11内が封止材で封止され、蓋20で樹脂ケース11の開口の上端を覆っている態様を示している。
コンデンサの容量は好ましくは合計で100μF~3000μF、好ましくは合計で400μF~600μFである。
11 樹脂ケース
11a 貫通孔
12 金属ベース板
13、23 冷却ケース
13a、23a 底壁
13b、23b 側壁
13c、23c 入口部
13d、23d 出口部
13e、23e 導入口
13f、23f 排出口
13g1、23g1 フランジ(第1フランジ)
13g2、23g2 フランジ(第2フランジ)
13eg、23eg 開口部(第1開口部)
13fg、23fg 開口部(第2開口部)
13h、23h ボルト孔
14D、14E 外部端子
15 絶縁基板
16 半導体チップ(半導体素子)
17 フィン
25 フィルムコンデンサ
31 流路部材
Claims (18)
- 第1面及び第2面を備える金属ベース板と、
前記第1面に接合され、第3面及び第4面を備える積層基板と、
前記第3面に搭載された半導体素子と、
前記金属ベース板の第1面側に配置され、前記積層基板及び前記半導体素子を囲む樹脂ケースと、
底壁及び前記底壁の周りに形成された側壁を有し、前記側壁の一端が前記金属ベース板の第2面側に接合され、前記金属ベース板、前記底壁及び前記側壁により囲まれた空間内に冷却液を流通可能な冷却ケースと、
を備え、
前記冷却ケースが、前記底壁及び前記側壁のいずれかに接続するとともに前記金属ベース板の第2面の周縁に沿って配置された冷却液の入口部及び出口部を有し、前記入口部の導入口側に配置された第1フランジ及び前記出口部の排出口側に配置された第2フランジを備えるパワー半導体モジュール。 - 前記第1フランジが前記導入口に対向する第1開口部と、前記第1開口部を挟んで配置された一組の第1ボルト孔とを備え、
前記第2フランジが前記排出口に対向する第2開口部と、前記第2開口部を挟んで配置された一組の第2ボルト孔とを備える請求項1記載のパワー半導体モジュール。 - 前記樹脂ケースが、前記第1ボルト孔に対応する一組の第1貫通孔と前記第2ボルト孔に対応する一組の第2貫通孔とを備え、前記第1ボルト孔及び第1貫通孔が前記樹脂ケースの厚み方向にボルトを挿入できるように配置され、前記第2ボルト孔及び第2貫通孔が前記樹脂ケースの厚み方向にボルトを挿入できるように配置されている請求項2記載のパワー半導体モジュール。
- 前記第1ボルト孔間を結ぶ線分と、前記第2ボルト孔間を結ぶ線分とが、ほぼ平行である請求項2記載のパワー半導体モジュール。
- 前記第1フランジ及び第2フランジのそれぞれの長径方向が金属ベース板の長辺方向に沿って延びている請求項4記載のパワー半導体モジュール。
- 前記半導体素子が、インバータ回路の上アームを構成する複数の第1半導体素子及び前記インバータ回路の下アームを構成する複数の第2半導体素子を含み、かつ、第1半導体素子及び第2半導体素子が、前記冷却ケースを流通し得る冷却液の移動方向に沿って配置されている請求項1記載のパワー半導体モジュール。
- 前記第1フランジ及び第2フランジが、それぞれ前記冷却ケースにワッシャを介して、ろう付けされてなる請求項1記載のパワー半導体モジュール。
- パワー半導体モジュールと組み合わせて使用され得る流路部材であって、
前記パワー半導体モジュールが、
金属ベース板と、
底壁及び前記底壁の周りに形成された側壁を有し、前記側壁の一端が前記金属ベース板の裏面に接合され、前記金属ベース板、前記底壁及び前記側壁により囲まれた空間内に冷却液を流通可能な冷却ケースとを備え、
さらに、前記冷却ケースが、前記底壁及び前記側壁のいずれかに接続するとともに前記金属ベース板の裏面の周縁に沿って配置された冷却液の入口部及び出口部を有し、前記入口部の導入口側に配置された第1フランジ及び前記出口部の排出口側に配置された第2フランジを備え、
前記流路部材が、前記第1フランジに接続し得る第1接続部と、前記第2フランジに接続し得る第2接続部と、前記第1接続部に接続し前記冷却液を流通可能な第1流路と、前記第2接続部に接続し前記冷却液を流通可能な第2流路とを備え、前記冷却ケースの底面に対向して配置され得る流路部材。 - 前記第1フランジが前記導入口に対向する第1開口部と、前記第1開口部を挟んで配置された一組の第1ボルト孔とを備え、
前記第2フランジが前記排出口に対向する第2開口部と、前記第2開口部を挟んで配置された一組の第2ボルト孔とを備え、
前記第1接続部に、前記第1ボルト孔と位置合わせされた雌ねじ孔が形成され、
前記第2接続部に、前記第2ボルト孔と位置合わせされた雌ねじ孔が形成された請求項8記載の流路部材。 - 前記第1接続部及び第2接続部に、それぞれOリングを収容する溝を備える請求項8記載の流路部材。
- 請求項1記載のパワー半導体モジュールと、請求項8記載の流路部材とを組み合わされてなるパワー半導体モジュール構造体。
- 前記パワー半導体モジュールと前記流路部材とが、複数のボルトにより締結された請求項11記載のパワー半導体モジュール構造体。
- 前記第1接続部及び第2接続部に、それぞれOリングを収容する溝を備え、前記各溝に、Oリングを備える請求項11記載のパワー半導体モジュール構造体。
- 上アーム及び下アームからなる第1の組と、上アーム及び下アームからなる第2の組とを備え、
前記第1の組は、少なくとも、前記積層基板として第1積層基板と、前記半導体素子として前記上アームを構成する第1半導体素子及び下アームを構成する第2半導体素子と、前記第1半導体素子及び第2半導体素子に電源を供給する第1電源端子と、を含み、
前記第2の組は、少なくとも、前記積層基板として第2積層基板と、前記半導体素子として前記上アームを構成する第3半導体素子及び下アームを構成する第4半導体素子と、前記第3半導体素子及び第4半導体素子に電源を供給する第2電源端子と、を含む、請求項1記載のパワー半導体モジュール。 - 前記第1電源端子は、電源のプラス側に接続され得る第1プラス端子及び前記電源のマイナス側に接続され得る第1マイナス端子を含み、
前記第2電源端子は、電源のプラス側に接続され得る第2プラス端子及び前記電源のマイナス側に接続され得る第2マイナス端子を含み、
前記第1プラス端子及び前記第2プラス端子は異なる端子であり、かつ同じ形状であり、
前記第1マイナス端子及び前記第2マイナス端子は異なる端子であり、かつ同じ形状である、請求項14記載のパワー半導体モジュール。 - 前記第1プラス端子及び前記第2プラス端子は同じ寸法であり、
前記第1マイナス端子及び前記第2マイナス端子は同じ寸法である、請求項15記載のパワー半導体モジュール。 - 前記第1プラス端子及び前記第2プラス端子はそれぞれ脚部を備え、
前記第1マイナス端子及び前記第2マイナス端子はそれぞれ脚部を備え、
前記第1プラス端子の脚部の延在方向と前記第1マイナス端子の脚部の延在方向が平行であり、
前記第2プラス端子の脚部の延在方向と前記第2マイナス端子の脚部の延在方向が平行であり、かつ、
前記第1プラス端子の脚部の延在方向と前記第2プラス端子の脚部の延在方向が平行である、請求項15記載のパワー半導体モジュール。 - 前記第1プラス端子と前記第1マイナス端子とは、間に第1コンデンサが接続可能に構成され、
前記第2プラス端子と前記第2マイナス端子とは、間に第2コンデンサが接続可能に構成されている請求項15記載のパワー半導体モジュール。
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