WO2016201715A1 - 一种具有分布图像传感单元的硅片分布状态检测方法及装置 - Google Patents

一种具有分布图像传感单元的硅片分布状态检测方法及装置 Download PDF

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WO2016201715A1
WO2016201715A1 PCT/CN2015/082293 CN2015082293W WO2016201715A1 WO 2016201715 A1 WO2016201715 A1 WO 2016201715A1 CN 2015082293 W CN2015082293 W CN 2015082293W WO 2016201715 A1 WO2016201715 A1 WO 2016201715A1
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silicon wafer
image
sensing unit
image sensing
carrier
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PCT/CN2015/082293
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English (en)
French (fr)
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徐冬
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北京七星华创电子股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Definitions

  • the present invention relates to the field of semiconductor processing equipment, and more particularly to a method for detecting a silicon wafer distribution state with a distributed image sensing unit, and to a silicon wafer distribution state detecting device having a distributed image sensing unit.
  • the safe access and transport of silicon wafers is a very important technical indicator for large-scale integrated circuit production.
  • the wafer fragmentation rate caused by the transport equipment itself is usually less than one in 100,000.
  • the wafer transfer, wafer placement and wafer take-up times required for each production process are more than that of the monolithic process system, thus the wafer transfer, wafer placement and fetching The security and reliability requirements of the film are higher.
  • robots are widely used in the field of semiconductor integrated circuit manufacturing technology.
  • the robot is an important device in the silicon wafer transmission system. It is used for access and transport process before and after processing, and it can accept instructions and precision. Positioning to a point in the three-dimensional or two-dimensional space for picking and placing silicon wafers, it is possible to pick and place a single wafer, and to pick and place multiple wafers.
  • the wafer when the robot picks up and puts the wafer, especially when the wafer is heated or deformed during the transfer process or heat treatment, the wafer may be in a protruding state on the carrier or in a laminated or inclined manner. In the case of a piece or a piece, there is often a collision that causes the wafer or device to be damaged, causing irreparable damage.
  • FIG. 1 is a schematic view showing the positional structure of a robot in the prior art during wafer transfer, wafer placement and film taking. As shown, when the silicon wafer in the silicon wafer set 2 is protruding on the carrier 3 When the abnormal state is abnormal, the movement of the robot 1 in the automatic access silicon wafer 2 is in an unsafe working state, which is very likely to cause damage to the silicon wafer 2 and the device (including the robot 1).
  • the identification of the distribution state of the silicon wafer in the batch type silicon wafer heat treatment system generally uses a simple photoelectric signal motion scanning method to identify the distribution state of the silicon wafer on the carrier 3, and this scanning method is only for the silicon wafer group 2
  • the silicon wafer is in an abnormal state such as a laminated piece, a slanted piece or a pieceless film, it has a certain detection effect, but if the silicon piece is in a protruding state on the carrier 3, it cannot be detected well, that is, through
  • the prior art simply results in abnormal or normal results, and is prone to collision during the motion scanning process, resulting in damage to the silicon wafer or equipment, and often causes false negatives and false positives.
  • a first object of the present invention is to provide a silicon wafer distribution state detecting method with a distributed image sensing unit, which can quickly and accurately detect the distribution state of the silicon wafer in the bearing area of the silicon semiconductor device, and avoid the silicon wafer and the device caused by the movement of the robot. damage.
  • a second object of the present invention is to provide a silicon wafer distribution state detecting device having a distributed image sensing unit.
  • the present invention provides a silicon having a distributed image sensing unit a slice distribution state detecting method, the image sensing unit includes two image sensing units; the first image sensing unit is fixed above the carrier carrying the silicon wafer group, and the second image sensing unit is fixed at the The position of the side of the carrier is unobstructed to the support structure of the silicon wafer; wherein the second image sensing unit comprises a plurality of image sensors fixedly distributed around the side of the carrier; the method comprises the following steps:
  • Step S1 setting a center coordinate of the ideally placed silicon wafer and a threshold value of the actual placement area from the center coordinate deviation; starting the first image sensing unit, perpendicular to the direction in which the silicon wafers are stacked, and taking a panoramic view of the stacked image of the silicon wafer;
  • Step S2 identifying, and extracting, from the placement state feature of the silicon wafer stacked image, a layered position area of all the silicon wafer placement states in the silicon wafer group, comparing the relationship between the location area and the ideal placement silicon wafer region; As a result of the comparison, it is determined whether the wafer placement in the silicon wafer group exceeds the deviation threshold; if yes, step S6 is performed, otherwise, step S3 is performed;
  • Step S3 preset a moving speed of the support structure of the carrier, and a coordinate position of the second image sensing unit, and calculate a coordinate difference between the coordinate position of the second image sensing unit and the reference position;
  • Step S4 each image sensor in the second image sensing unit moves the carrier to the first position of the silicon wafer according to the moving speed and the coordinate difference of the support structure. Position as the initial acquisition position; take a side plane image of the silicon wafer in a parallel direction in which the silicon wafer is placed, and align the placement position of each silicon wafer at a specified time interval to obtain the side of the silicon wafer in the entire load bearing area Plane image
  • Step S5 Using an image feature recognition algorithm, extracting a placement state feature of the recognition object from each of the side plane images in an image calibration position interval distribution area, and determining whether the corresponding silicon wafer has a diagonal slice, a lamination, and/or an empty The abnormal state of the slice; if there is no abnormal state, execute step S9; Then, step S8 is performed;
  • Step S6 Using an image feature recognition algorithm, extracting a placement state feature of the recognition object from each of the side plane images in an image calibration position interval distribution area, and determining whether the corresponding silicon wafer has a tab, a diagonal piece, a lamination, and / or an abnormal state of the empty slice; if there is no abnormal state, step S8 is performed; otherwise, step S9 is performed;
  • Step S7 alarming and waiting for manual disposal or disposition according to regulations, or performing steps S3, S4 and S6;
  • Step S8 alarming and waiting for manual disposal or disposal according to regulations
  • the placement state feature of the recognition object in the step S5 is a distribution feature of the edge of the image side of the single silicon wafer, and the distribution area of the image calibration position is calculated by calculating the coordinate position of the left and right edges of the silicon wafer in the Y direction at the highest point and the lowest point. The difference is used to determine the thickness of the object to be identified, and based on the thickness of the object to be identified, it is judged whether or not the corresponding wafer has an abnormal state of the tab, the oblique piece, the lamination, and/or the empty piece.
  • the plurality of image sensors in the second image sensing unit are evenly distributed on the entire circumference of the carrier, and the selection is set as follows:
  • Cumulative detection position number 360 ° / set rotation angle
  • the total number of detected positions (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1
  • the present invention provides a silicon wafer distribution state detecting device having a distributed image sensing unit, including a first image sensing unit, a second image sensing unit, a control unit, and an alarm device;
  • the first image sensing unit is disposed above the carrier carrying the silicon wafer set for overhead view of an image stacked in a state in which the silicon wafer is placed in the silicon wafer group;
  • the second image sensing unit is fixed on the image sensing unit
  • the side circumference of the carrier is facing an unobstructed position of the silicon wafer supporting structure
  • the second image sensing unit includes a plurality of image sensors distributed on the side of the carrier for moving speed and coordinate difference according to the support structure of the carrier Value, the position of the first wafer placed to its coordinate position is taken as the initial acquisition position, the side plane image of the silicon wafer is taken in the parallel direction in which the silicon wafer is placed, and each of the wafers is aligned at a specified time interval.
  • the control unit is configured to start detecting and processing a stacked image of the silicon wafer in the silicon wafer group in a top view and a side planar image in each of the silicon wafer groups in the horizontally photographed state; and according to Extracting the laminated position area and the placement state feature to obtain an abnormal state distribution of the silicon wafer on the carrier; wherein the abnormal state includes a state of the silicon wafer protrusion, the oblique piece, the lamination, and/or the empty piece And an alarm device connected to the control unit, the control unit controlling opening and closing of the alarm device according to an abnormal state distribution.
  • the first image sensing unit is disposed on an inner surface of the automatic opening and closing furnace door end cover, and moves horizontally to the carrier carrying the silicon wafer group with the automatic opening and closing furnace door end cover Above.
  • the first image sensing unit is disposed on the robot and moves with the robot to the upper of the carrier carrying the silicon wafer set.
  • the second image sensing unit is fixedly disposed on the end of the automatic opening and closing furnace door end cover The position of the brace.
  • the method and device for detecting the distribution state of the silicon wafer with the distributed image sensing unit provided by the present invention are first passed after the wafer transfer sheet is completed in two stages and before the film is taken.
  • the image sensing unit is disposed above the silicon wafer group, and the silicon wafer stacked image is viewed from above, and the silicon wafer placement in the silicon wafer group is determined according to the coordinate deviation threshold between the center coordinates of the ideal placement silicon wafer and the center of the actual placement region.
  • the second image sensing unit (including a plurality of image sensors distributed on the side of the carrier side) is also fixed at a position that is not blocked by the support structure of the silicon wafer, and according to the movement speed of the support structure
  • the coordinate difference value of the reference position, the side plane image of each silicon wafer placement position is collected at a specified time interval and in the parallel direction of the silicon wafer at a specified time interval and in the parallel direction of the silicon wafer.
  • the image is distributed to determine whether the corresponding silicon wafer has an abnormal state distribution of the tab, the oblique piece, the lamination, and/or the empty piece.
  • the invention quickly acquires whether the silicon wafer has an abnormal protruding state, and since the test result is not affected by the surface temperature state of the silicon wafer, the test accuracy is further improved.
  • 1 is a schematic view showing the position of a robot in the prior art during wafer transfer, wafer placement, and wafer taking.
  • FIG. 2 is a schematic view showing the structure of a carrier end cover (Shutter) located above the silicon wafer group in the prior art.
  • FIG. 3 is a diagram showing a first image sensing unit disposed on an inner surface of an end cover in a silicon wafer distribution state detecting device having a distributed image sensing unit according to an embodiment of the present invention, and a second image sensing unit disposed on the end cover.
  • FIG. 4 is a first image sensing unit in a silicon wafer distribution state detecting device having a distributed image sensing unit according to an embodiment of the present invention, and the second image sensing unit is disposed on the end cap; Schematic diagram of the structure on the arm
  • FIG. 5 is a schematic flow chart of a preferred embodiment of a method for detecting a distribution state of a silicon wafer with a distributed image sensing unit according to an embodiment of the present invention
  • FIG. 6 is a flowchart of overall control of detecting a distribution state of a silicon wafer with a distributed image sensing unit according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram showing an image of a protruding abnormal state of a silicon wafer according to an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of a specific control flow of a preferred embodiment for determining whether an abnormal state of a slanting piece, a lamination, and/or an empty piece exists in an embodiment of the present invention
  • FIG. 10 is a schematic diagram showing positional relationship parameters of a silicon wafer and a carrier according to an embodiment of the present invention.
  • the method for detecting the state of distribution of the silicon wafer having the distributed image sensing unit 4 of the present invention can be implemented by two different devices, as shown in the embodiments in FIGS. 3 and 4.
  • the above two devices each include a first image sensing unit 41, a second image sensing unit 42, a control unit (not shown), and an alarm device (not shown);
  • the first image sensing unit 42 is disposed on the silicon carrying Above the carrier of the chip set, for viewing the image of the silicon wafer placed in the silicon wafer group 2 in a top view;
  • the second image sensing unit 42 is fixed on the side of the carrier and is unobstructed to the silicon wafer supporting structure The position is used to take the position of the first wafer placed to its coordinate position as the initial acquisition position according to the moving speed and coordinate difference of the support structure of the carrier 3, and take the corresponding silicon wafer in the parallel direction in which the silicon wafer is placed.
  • the coordinate difference is the coordinate of the second image sensing unit 42 The difference between the position and the reference position.
  • FIG. 2 is a schematic structural view of a carrier end cover 5 (Shutter) located above the silicon wafer set in the prior art
  • FIG. 3 is a silicon wafer with a distributed image sensing unit according to an embodiment of the present invention
  • the first image sensing unit 41 in the distributed state detecting device is disposed on the inner surface of the end cap, that is, above the wafer set 2.
  • the silicon wafer stacked image is taken in a bird's eye view, and the silicon wafer group 2 is judged according to the central coordinate of the ideally placed silicon wafer and the coordinate deviation threshold between the centers of the actual placement regions. Whether the wafer placement has exceeded the deviation threshold.
  • the second image sensing unit 42 is disposed on the support arm 6 of the end cover 5, and the second image sensing unit 42 includes a plurality of image sensing units, that is, a plurality of the second image sensing units 42.
  • the image sensing unit can be mounted in a fixed position (such as the support arm 6 of the end cover 5) at a position that is unobstructed to the silicon support structure in the microenvironment, the support arm 6 being located on the periphery of the silicon support structure and parallel to The wafer supporting structure; the image sensing unit 42 fixed on the supporting arm 6 is stationary, but the carrier 3 can be moved parallel to the supporting arm 6 under the driving of the loading and unloading unit itself; That is, the up and down movement of the carrier 3 allows the second image sensing unit 42 to position the corresponding wafer position in the vertical direction with respect to the silicon wafer group 2 stacked in the carrier 3.
  • the acquisition direction of the image sensing unit 42 is parallel to the wafer surface direction (horizontal direction), and is collected at specified time intervals according to the moving speed of the image sensing unit 42 and the coordinate difference of the reference position.
  • the distribution image of each silicon wafer placement position acquires the state of the silicon wafer distribution in the entire load bearing region. That is, the image sensing unit 42 sequentially photographs the side plane images of each of the silicon wafers 2 in the parallel direction of the silicon wafer from top to bottom, and determines whether the corresponding silicon wafer has protrusions, slanting sheets, laminations, and/or Or the case of an abnormal state distribution of an empty slice.
  • the plurality of image sensors in the second image sensing unit 42 in the device are evenly distributed on the entire circumference of the carrier, and the selection is set as follows:
  • Cumulative detection position number 360 ° / set interval angle
  • the total number of detected positions (360 ° / set interval angle) rounded (after rounding off the decimal point) +1
  • the starting point and the interval angle value need to be reset; that is, the layout around the carrier 3 is realized. Scanning detection points further improve the detection accuracy.
  • FIG. 4 is a first image sensing unit 41 disposed on a robot 1 and a second image sensing unit in a silicon distribution state detecting device having a distributed image sensing unit according to an embodiment of the present invention.
  • 42 is a schematic view of the structure provided on the support arm 6 of the end cover 5.
  • the first image sensing unit 41 may be disposed on the robot 1 , and the image sensing unit 41 is disposed above the silicon wafer 2 by the movement of the robot 1 to view the stacked image of the silicon wafer in a plan view. According to the coordinate deviation threshold between the center coordinate of the ideally placed silicon wafer and the center of the actual placement region, it is judged whether the wafer placement in the silicon wafer group 2 exceeds the deviation threshold.
  • the second image sensing unit 42 in FIG. 4 can adopt any position fixed to the side circumference of the carrier 3, for example, the structure in FIG. 3, and details are not described herein again.
  • the above-described devices shown in FIGS. 3 and 4 each include a control unit (not shown) for initiating the image sensing unit 4 to detect and process the stacked image of the silicon wafer in the top view of the silicon wafer group 2 and horizontally photographed. a side plane image of each wafer in the silicon wafer group 2; and an abnormal state distribution of all the silicon wafers on the carrier according to the extracted laminated position region and the placement state characteristic; wherein the abnormal states include silicon The state of the protrusion, the slanting piece, the lamination and/or the empty piece; and the control unit may also be connected to the alarm unit, and the control unit may control the opening and closing of the alarm unit according to the abnormal state distribution.
  • FIG. 5 is a schematic flow chart of a preferred embodiment of a method for detecting a distribution state of a silicon wafer with a distributed image sensing unit according to an embodiment of the present invention.
  • Figure 6 is the present invention An overall control flow chart for the detection of the distribution state of the silicon wafer with the distributed image sensing unit in the embodiment. As shown in FIG. 5, the method includes the following steps:
  • Step S1 setting a center coordinate of the ideally placed silicon wafer and a deviation threshold of the actual placement area from the center coordinate; starting the first image sensing unit 41, perpendicular to the direction in which the silicon wafer is stacked, and taking a panoramic view of the stacked image of the silicon wafer;
  • Step S2 identifying, and extracting, from among the placement state features of the stacked image of the silicon wafer, a laminated position region in which all the silicon wafers are placed in the silicon wafer group 2, and comparing the relationship between the positional region and the ideally placed silicon wafer region; and according to the comparison result, Determining whether the wafer placement in the silicon group 2 has exceeded the deviation threshold; if yes, executing step S6, otherwise, performing step S3;
  • Step S3 preset the movement speed of the support structure of the carrier 3, and the coordinate position of the second image sensing unit 42, and calculate the coordinate difference between the coordinate position of the second image sensing unit 42 and the reference position;
  • Step S4 The second image sensing unit 42 takes the position of the first placement of the silicon wafer that moves with the carrier 3 to its coordinate position as the initial acquisition position according to the moving speed and the coordinate difference value of the support structure of the carrier 3; Taking a parallel plane of the silicon wafer to take a side plane image of the silicon wafer, and aligning the placement position of each silicon wafer at a specified time interval to obtain a side plane image of the silicon wafer in the entire bearing area;
  • Step S5 Using an image feature recognition algorithm, extracting a placement state feature of the recognition object from each of the side plane images in an image calibration position interval distribution area, and determining whether the corresponding silicon wafer has a diagonal slice, a lamination, and/or an empty The abnormal state of the slice; if there is no abnormal state, step S8 is performed; otherwise, step S7 is performed;
  • Step S6 using an image feature recognition algorithm to distribute the region in the image calibration position interval, from each Extracting the placement state feature of the identification object in the side plane image, determining whether the corresponding silicon wafer has an abnormal state of the tab, the oblique piece, the lamination and/or the empty piece; if there is no abnormal state, performing step S7; otherwise, Go to step S8;
  • Step S7 alarming and waiting for manual disposal or disposal according to regulations
  • the present invention completes the entire inspection process by the following two identification sub-stages after the completion of the transfer of the wafer and before the take-up:
  • FIG. 7 is a schematic diagram of an image in which the silicon wafer has a prominent abnormal state in the embodiment of the present invention.
  • the theoretical silicon wafer center coordinate is A (xa, ya) and the radius is Ra, that is, the silicon wafer laminated image is at the center of the normal silicon wafer position (blank) region; if the actual silicon wafer stacked image has a dark gray region,
  • the center of the circumferential area is the same as the center of the normal silicon wafer position (blank), and the radius (the distance of the edge from the center point) is different as Rb.
  • Rb does not exceed the deviation threshold, it is within the acceptable deviation range; if the actual silicon layer is stacked It has a light gray area, the center of the circumferential area is the same as the center of the normal silicon wafer position (blank) area, and the radius is different from Rc. If the deviation threshold is exceeded, it is within an unacceptable deviation range.
  • the actual silicon wafer center point C(xc, yc) can be obtained by an image acquisition and recognition algorithm
  • the image recognition method is to select a point at which the silicon wafer and the supporting mechanism are connected as a feature recognition point, and the center point of one circumference can be determined by using three points not on the same straight line.
  • the group method three points are selected from the total feature points as a group Cn3 arrangement, and the center coordinates are calculated respectively, and then the center coordinates of all groups are averaged to obtain C(xc). , yc).
  • FIG. 8 is a flow chart of command control of a preferred embodiment of the silicon wafer protruding abnormal state detection according to the present invention. If the abnormality of the silicon wafer is detected, the abnormality of the wafer is abnormal. If an abnormal position is found, an abnormal alarm is given, waiting for manual disposal or disposing according to regulations, or performing steps S3, S4 and S6 (ie, the whole Step S7 includes the process; if not, steps S3, S4, and S5 can be directly performed.
  • step S7 in addition to waiting for manual disposal or according to prescribed treatment, the abnormal state detecting step of the oblique piece, the lamination and/or the empty piece of the silicon wafer may be directly executed (ie, Embodiment 1);
  • the specific state of the tab that is, the eccentricity or tilting, is about to require a positioning step of protruding abnormality of the silicon wafer, and at the same time, it is necessary to perform an abnormal state detecting step of the inclined piece, the lamination and/or the empty piece of the silicon wafer (ie, an embodiment) 2).
  • step S2 if it is not recognized in step S2 that the wafer placement in the entire wafer group 2 exceeds the deviation threshold (first identification sub-stage), then the side of the carrier 3 is fixed to the wafer support.
  • the image sensing unit 42 having an unobstructed position (including a plurality of image sensors distributed on the side of the side of the carrier 3) will move with the carrier 3 to its coordinate position according to the moving speed and coordinate difference of the support structure of the carrier 3.
  • the carrier 3 is moved up and down.
  • step S7 using the image feature recognition algorithm, in the image calibration position interval distribution area, extracting the placement state feature of the recognition object from each side plane image, and determining whether the corresponding silicon wafer has a tab, a diagonal piece, a lamination and/or If there is no abnormal state, it means that the result of the identification is that the silicon wafer placement position in the silicon group 2 is normal (step S8); otherwise, it indicates that an abnormal state exists, and an alarm is required and waits for manual disposal or pressing The treatment is prescribed (step S7).
  • the second image sensing unit 42 collects the direction parallel to the surface direction of the silicon wafer (horizontal direction), and collects a distribution image of each silicon wafer placement position at a specified time interval according to the motion speed and the coordinate difference value of the reference position, and acquires the entire image.
  • the state of the distribution of the silicon in the carrying area, the summation of the state results of all the distributed positions, the results are two:
  • FIG. 9 is a schematic diagram showing a specific control flow of a preferred embodiment for determining whether there is an abnormal state of a slanting piece, a lamination, and/or an empty piece in the embodiment of the present invention.
  • the abnormal state detection of the oblique pieces, the laminations, and/or the empty sheets is sequentially performed.
  • FIG. 10 is a schematic diagram showing the positional relationship between a silicon wafer and a carrier according to an embodiment of the present invention. If the silicon wafer thickness value d is set, the teaching reference position is d/2, the spacing between adjacent silicon wafers is s, and the thickness of the support member of the carrier 3 is t.
  • the second image sensing unit 42 For each of the recognition positions, the second image sensing unit 42 performs motion photographing scanning from top to bottom according to its teaching position parameter, and uses an image feature recognition algorithm at each of the calibrated positions (for example, selecting a silicon wafer edge as a feature extraction point) ), extracting the distribution characteristics of the identified object, if there is no silicon feature Extracting the return space, calculating the difference between the highest point and the lowest point coordinate position of the identification object in the Y direction, and obtaining the thickness of the identification object, and comparing the theoretical setting data, the following state classification is as follows:
  • the second image sensing unit 42 includes a plurality of image sensors, and a plurality of detection positions may be disposed around the sides of the carrier 3, and step S3 is performed once for each detection position.
  • the plurality of sets of detection results are subjected to an AND operation to obtain an abnormal state distribution of the final silicon wafer slanting sheets, laminations, and/or empty sheets, that is, the distribution state of the silicon wafers on the circumference can be more detailedly detected.
  • the plurality of position points may be evenly distributed or unevenly distributed; for example, to avoid the support column of the carrier 3, it may be 10° or 20° from the left and right of the support column. Position reset detection.
  • Cumulative detection position number 360 ° / set interval angle
  • the total number of detected positions (360 ° / set interval angle) rounded (after rounding off the decimal point) +1
  • the starting point and the interval angle value need to be reset.
  • the second image sensing unit 42 when the second image sensing unit 42 performs the abnormal state detection of the oblique sheet, the lamination, and/or the empty sheet of the silicon wafer, it is necessary to detect the specific state of the tab, that is, the eccentricity or the tilt. That is, it is the same in the wafer side image capturing step (step S3 and step S4) of the second image sensing unit 42, but the identification step (step S6) of the wafer side image is different, and needs to be increased. Determine the specific state of the tab, that is, the eccentricity or tilt.
  • the image sensing unit 42 is positioned on the carrier 3 side. Around the edge, and the position corresponding to the first placement of the silicon wafer is taken as the vertical and horizontal starting point position, and then the image sensing unit 4 sequentially photographs 2 silicon wafers in the silicon wafer group from top to bottom in the parallel direction of the silicon wafer.
  • the side plane image of the sheet step S3.
  • the second image sensing unit 42 collects the direction parallel to the surface direction of the silicon wafer (horizontal direction), and collects a distribution image of each silicon wafer placement position at a specified time interval according to the motion speed and the coordinate difference value of the reference position, and acquires the entire image.
  • the state of the distribution of the silicon in the carrying area, the summation of the state results of all the distributed positions, the results are two:
  • the second image is required according to the second image.
  • the side image of the silicon wafer collected by the sensing unit 42 determines whether there is an abnormal state of the tab.
  • the abnormal state detection of the tab, the slanting piece, the lamination, and/or the empty piece is sequentially performed.
  • the subsequent steps are the same as in the embodiment, and details are not described herein again.
  • the process judging step may be performed, and the specific process steps of the step are presented in FIG. This will not be repeated here.

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Abstract

一种具有分布图像传感单元的硅片分布状态检测方法及装置，其通过将第一图像传感单元（41）设置在硅片组（2）的上方，俯视拍摄硅片层叠图像，判断所述硅片组（2）中硅片放置是否有超出偏差阈值的情况；还将第二图像传感单元（42）固设在正对硅片支撑结构无遮挡的位置，第二图像传感单元（42）包括多个分布在承载器侧周的图像传感器，根据承载器（3）的垂直运动速度以及基准位置，按指定时间间隔和沿硅片的平行方向采集每一个硅片放置位置的侧边平面图像分布图像，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态分布。该方法快速获取硅片是否存在异常突出状态，且由于测试结果不受硅片表面温度状态影响，因此，测试准确性得到了进一步提高。

Description

一种具有分布图像传感单元的硅片分布状态检测方法及装置 技术领域
本发明涉及半导体加工设备技术领域，尤其涉及一种具有分布图像传感单元的硅片分布状态检测方法，本发明还涉及一种具有分布图像传感单元的硅片分布状态检测装置。
技术背景
硅片的安全存取和输运是集成电路大生产线一个非常重要的技术指标，在生产过程中，通常要求由于输运设备自身导致的硅片破片率应小于十万分之一。并且，作为批量式硅片热处理系统，相对于单片式工艺系统，每个生产工艺所需的硅片传输、硅片放置和取片次数更多，因而对硅片传输、硅片放置和取片的安全性和可靠性要求更高。
目前，机械手被广泛应用于半导体集成电路制造技术领域中，机械手是硅片传输系统中的重要设备，用于存取和输运工艺处理前和工艺处理后的硅片，其能够接受指令，精确地定位到三维或二维空间上的某一点进行取放硅片，既可对单枚硅片进行取放作业，也可对多枚硅片进行取放作业。
然而，当机械手在对硅片进行取放作业时，尤其是，当硅片在传输过程或热处理过程中导致的受热变形等情况会导致硅片在承载器上处于突出状态或者处于叠片、斜片或无片状态时，往往会产生碰撞导致硅片或设备受损，造成不可弥补的损失。
请参阅图1，图1为现有技术中机械手在硅片传输、硅片放置和取片时的位置结构示意图。如图所示，当硅片组2中的硅片在承载器3上处于突出 等异常状态时，机械手1在自动存取硅片2的运动处于非安全工作状态，非常容易造成硅片2及设备(包括机械手1)的损伤。
因此，在机械手1完成硅片放置后或准备取片前，需对承载器3上硅片组2中的硅片分布状态进行准确的识别，同时对识别出的各种异常状态提供准确应对措施，以实现安全取放片。
目前，批量式硅片热处理系统的硅片分布状态的识别一般是采用单纯的光电信号运动扫描方法对硅片在承载器3上的分布状态进行识别，这种扫描方法仅对硅片组2中的硅片处于叠片、斜片或无片等异常状态时，有一定的检测效果，但如果硅片在承载器3上处于突出状态时，就不能很好地检测出，也就是说，通过现有技术简单的得出异常或正常的结果，在运动扫描过程中还是易产生碰撞导致硅片或设备受损，同时经常产生漏报、误报的情况。
随着半导体集成电路制造技术的发展，对硅片的安全存取和输运提出了更高的要求，即对机械手的精准控制要求也越来越高。因此，如何快速准确检测硅片半导体设备承载区域内的硅片分布状态，避免机械手运动造成硅片及设备损伤，已成为本领域技术人员亟待解决的技术难题。
发明概要
本发明的第一个目的是提供一种具有分布图像传感单元的硅片分布状态检测方法，能够快速准确检测硅片半导体设备承载区域内的硅片分布状态，避免机械手运动造成硅片及设备损伤。本发明的第二个目的是提供具有分布图像传感单元的硅片分布状态检测装置。
为了实现上述第一个目的，本发明提供一种具有分布图像传感单元的硅 片分布状态检测方法，所述图像传感单元包括两个图像传感单元；第一图像传感单元固设于载有硅片组的承载器的上方，第二图像传感单元固设于所述承载器侧周正对硅片支撑结构无遮挡的位置；其中，第二图像传感单元包括多个固定分布在承载器侧周的图像传感器；所述方法包括以下步骤：
步骤S1、设定理想放置硅片的中心坐标和实际放置区域距所述中心坐标偏差阈值；启动所述第一图像传感单元，垂直于硅片层叠的方向，俯视拍摄硅片层叠图像；
步骤S2：从所述硅片层叠图像的放置状态特征中，识别并提取所述硅片组中所有硅片放置状态的层叠位置区域，对比该位置区域与理想放置硅片区域的关系；以及根据比较结果，判断所述硅片组中硅片放置是否有超出偏差阈值的情况；如果是，执行步骤S6，否则，执行步骤S3；
步骤S3：预设所述承载器支撑结构的运动速度，以及所述第二图像传感单元的坐标位置，并计算所述第二图像传感单元的坐标位置与基准位置的坐标差值；
步骤S4：所述第二图像传感单元中的每一个图像传感器根据所述承载器支撑结构移动速度和坐标差值，将随所述承载器移动至其坐标位置的第一个放置硅片的位置作为起始采集位置；沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；
步骤S5：用图像特征识别算法，在图像标定位置区间分布区域，从每个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S9；否 则，执行步骤S8；
步骤S6：用图像特征识别算法，在图像标定位置区间分布区域，从每个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S8；否则，执行步骤S9；
步骤S7：报警并等待人工处置或者按规定处置，或执行步骤S3、S4和S6；
步骤S8：报警并等待人工处置或者按规定处置；
步骤S9：结束。
优选地，所述步骤S5中的识别对象的放置状态特征为单个硅片侧面图像边缘的分布特征，在图像标定位置区间分布区域，通过计算硅片左右边缘在Y方向最高点和最低点坐标位置差值，求得识别对象的厚度，并根据识别对象的厚度，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态。
优选地，所述第二图像传感单元中的多个图像传感器均匀分布在整个所述承载器侧周上，选择设定如下：
A.当(360°/设定旋转角度)的余数＝0时：
累计检测位置数目＝360°/设定旋转角度
实际旋转角度＝设定旋转角度
B.当(360°/设定旋转角度)的余数≠0时：
累计检测位置数目＝(360°/设定旋转角度)取整(舍去小数点后)+1
实际旋转角度＝360°/累计检测位置数目
如果由旋转起始点和设定旋转角度生成的检测位置坐标值与所述承载 器支撑点的坐标位置冲突，则需重新设定起始点和旋转角度值。
为了实现上述第二个目的，本发明提供一种具有分布图像传感单元的硅片分布状态检测装置，其包括第一图像传感单元、第二图像传感单元、控制单元和报警装置；所述第一图像传感单元设置于载有硅片组的承载器的上方，用于俯视拍摄层叠于所述硅片组中硅片放置状态的图像；所述第二图像传感单元固设于所述承载器的侧周正对硅片支撑结构无遮挡的位置，第二图像传感单元包括多个分布在承载器侧周的图像传感器，用于根据所述承载器支撑结构移动速度和坐标差值，将移动至其坐标位置的第一个放置硅片的位置作为起始采集位置，沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；其中，所述坐标差值为所述第二图像传感单元的坐标位置与基准位置的差值；所述控制单元用于启动检测并处理俯视拍摄的所述硅片组中硅片的层叠图像和水平拍摄的所述硅片组中每片硅片放置状态的侧边平面图像；并根据提取的层叠位置区域和放置状态特征，得到所述硅片在承载器上的异常状态分布情况；其中，所述的异常状态包括硅片凸出、斜片、叠片和/或空片的状态；以及报警装置与所述控制单元连接，所述控制单元根据异常状态分布情况控制所述报警装置的启闭。
优选地，所述第一图像传感单元设置于自动开闭炉门端盖的内表面上，并随所述自动开闭炉门端盖的水平移动至所述载有硅片组的承载器的上方。
优选地，所述第一图像传感单元设置于机械手上，并随所述机械手移动至所述载有硅片组的承载器的上方。
优选地，所述第二图像传感单元固定设置于所述自动开闭炉门端盖的支 撑柱的位置上。
从上述技术方案可以看出，本发明提供的具有分布图像传感单元的硅片分布状态检测方法和装置，在两个阶段即硅片传送片完成后和取片前，通过首先通过将第一图像传感单元设置在硅片组的上方，俯视拍摄硅片层叠图像，并根据理想放置硅片的中心坐标和实际放置区域中心间的坐标偏差阈值，判断所述硅片组中硅片放置是否有超出偏差阈值的情况；还将第二图像传感单元(包括多个分布于承载器侧周的图像传感器)固设在正对硅片支撑结构无遮挡的位置，并根据支撑结构的运动速度以及基准位置的坐标差值，按指定时间间隔和沿硅片的平行方向采集每一个硅片放置位置的按指定时间间隔和沿硅片的平行方向采集每一个硅片放置位置的侧边平面图像分布图像，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态分布。本发明快速获取硅片是否存在异常突出状态，且由于测试结果不受硅片表面温度状态影响，因此，测试准确性得到了进一步提高。
附图说明
图1为现有技术中机械手在硅片传输、硅片放置和取片时的位置示意图
图2为现有技术中位于硅片组上方的承载器端盖(Shutter)结构示意图
图3为本发明实施例中具有分布图像传感单元的硅片分布状态检测装置中的第一图像传感单元设置在端盖的内表面上，第二图像传感单元设置在端盖的支撑臂上的结构示意图
图4为本发明实施例中具有分布图像传感单元的硅片分布状态检测装置中的第一图像传感单元设置于机械手上，第二图像传感单元设置在端盖的支 撑臂上的结构示意图
图5为本发明实施例中具有分布图像传感单元的硅片分布状态检测方法一较佳实施例的流程示意图
图6为本发明实施例中具有分布图像传感单元的硅片分布状态检测的整体控制流程图
图7为本发明实施例中硅片存在突出异常状态的图像示意图
图8为本发明硅片突出异常状态检测一较佳实施例的指令控制流程图
图9为本发明实施例中判断是否存在斜片、叠片和/或空片的异常状态的一较佳实施例的具体控制流程示意图
图10为本发明实施例中硅片和承载器的位置关系参数示意图
[图中附图标记]：
机械手 1
硅片组 2
承载器 3
图像传感部件 4
第一图像传感单元 41
第二图像传感单元 42
端盖 5
端盖的支持臂 6
发明内容
为使本发明的内容更加清楚易懂，以下结合说明书附图，对本发明的内 容作进一步说明。当然本发明并不局限于该具体实施例，本领域内的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。其次，本发明利用示意图进行了详细的表述，在详述本发明实施例时，为了便于说明，示意图不依照一般比例局部放大，不应以此作为对本发明的限定。
需要说明的是，本发明具有分布图像传感部件4的硅片分布状态检测方法可以采用两种不同的装置实现，如图3和图4中的实施例所示。
上述两种装置均包括第一图像传感单元41、第二图像传感单元42、控制单元(图未示)和报警装置(图未示)；第一图像传感单元42设置于载有硅片组的承载器的上方，用于俯视拍摄层叠于硅片组2中硅片放置状态的图像；第二图像传感单元42固设于所述承载器的侧周正对硅片支撑结构无遮挡的位置，用于根据承载器3支撑结构移动速度和坐标差值，将移动至其坐标位置的第一个放置硅片的位置作为起始采集位置，沿硅片放置的平行方向拍摄相应硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；其中，上述坐标差值为第二图像传感单元42的坐标位置与基准位置的差值。
请结合图2参阅图3，图2为现有技术中位于硅片组上方的承载器端盖5(Shutter)的结构示意图；图3为本发明实施例中具有分布图像传感单元的硅片分布状态检测装置中的第一图像传感单元41设置在端盖的内表面上，即位于硅片组2的上方。其通过将第一图像传感单元41设置在硅片组的上方，俯视拍摄硅片层叠图像，并根据理想放置硅片的中心坐标和实际放置区域中心间的坐标偏差阈值，判断硅片组2中硅片放置是否有超出偏差阈值的情况。
如图3所示，第二图像传感单元42设置在端盖5的支撑臂6上，第二图像传感单元42包括多个图像传感单元，即第二图像传感单元42中的多个图像传感单元可在微环境内正对硅片支撑结构无遮挡的位置安装一个固定位置(如端盖5的支撑臂6上)，该支撑臂6位于硅片支撑结构外围，且平行于硅片支撑结构；固设在支撑臂6上的图像传感单元42是不动的，但承载器3在其本身具有的装卸单元的驱动下，可以相对于支撑臂6作相互平行移动；也就是说，承载器3的上下移动，可以使第二图像传感单元42相对于层叠于承载器3中的硅片组2沿垂直方向定位对应每一片硅片所处的位置。
在这种情况下，图像传感单元42的采集方向为平行于硅片表面方向(水平方向)，并且根据图像传感单元42的运动速度，以及基准位置的坐标差值，按指定时间间隔采集每一个硅片放置位置的分布图像，获取整个承载区域内硅片分布的状态。即图像传感单元42沿硅片的平行方向，从上至下依次拍摄硅片组2中每片硅片的侧边平面图像，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态分布的情况。
在本实施例中，该装置中的第二图像传感单元42中的多个图像传感器均匀分布在整个所述承载器侧周上，选择设定如下：
A.当(360°/设定间隔角度)的余数＝0时：
累计检测位置数目＝360°/设定间隔角度
实际间隔角度＝设定间隔角度
B.当(360°/设定间隔角度)的余数≠0时：
累计检测位置数目＝(360°/设定间隔角度)取整(舍去小数点后)+1
实际间隔角度＝360°/累计检测位置数目
如果由旋转起始点和设定间隔角度生成的检测位置坐标值与承载器3支撑点的坐标位置冲突，则需重新设定起始点和间隔角度值；即实现了在承载器3的周围布设多个扫描检测点，进一步地提高了检测精度。
请参阅图4，图4为本发明实施例中实施例中具有分布图像传感单元的硅片分布状态检测装置中的第一图像传感单元41设置于机械手1上，第二图像传感单元42设置在端盖5的支撑臂6上的结构示意图。
在本发明的一些实施例中，第一图像传感单元41可设置在机械手1上，其通过机械手1的移动将图像传感单元41设置在硅片2的上方，俯视拍摄硅片层叠图像，并根据理想放置硅片的中心坐标和实际放置区域中心间的坐标偏差阈值，判断硅片组2中硅片放置是否有超出偏差阈值的情况。
图4中的第二图像传感单元42可以采用任何固定于承载器3侧周的位置，例如，图3中的结构，在此不再赘述。
上述图3和图4中所示的装置均包括控制单元(图未示)，其用于启动图像传感单元4检测并处理俯视拍摄的硅片组2中硅片的层叠图像和水平拍摄的硅片组2中每片硅片放置状态的侧边平面图像；并根据提取的层叠位置区域和放置状态特征，得到所有硅片在承载器上的异常状态分布情况；其中，这些异常状态包括硅片凸出、斜片、叠片和/或空片的状态；并且，控制单元还可以连接报警单元，该控制单元可以根据异常状态分布情况控制报警单元的启闭。
请参阅图5、6、7、8、9和10，图5为本发明实施例中具有分布图像传感单元的硅片分布状态检测方法一较佳实施例的流程示意图。图6为本发明 实施例中具有分布图像传感单元的硅片分布状态检测的整体控制流程图。如图5所示，该方法包括以下步骤：
步骤S1、设定理想放置硅片的中心坐标和实际放置区域距该中心坐标偏差阈值；启动第一图像传感单元41，垂直于硅片层叠的方向，俯视拍摄硅片层叠图像；
步骤S2：从硅片层叠图像的放置状态特征中，识别并提取硅片组2中所有硅片放置状态的层叠位置区域，对比该位置区域与理想放置硅片区域的关系；以及根据比较结果，判断硅片组2中硅片放置是否有超出偏差阈值的情况；如果是，执行步骤S6，否则，执行步骤S3；
步骤S3：预设承载器3支撑结构的运动速度，以及第二图像传感单元42的坐标位置，并计算第二图像传感单元42的坐标位置与基准位置的坐标差值；
步骤S4：第二图像传感单元42根据承载器3支撑结构的移动速度和坐标差值，将随承载器3移动至其坐标位置的第一个放置硅片的位置作为起始采集位置；沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；
步骤S5：用图像特征识别算法，在图像标定位置区间分布区域，从每个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S8；否则，执行步骤S7；
步骤S6：用图像特征识别算法，在图像标定位置区间分布区域，从每 个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S7；否则，执行步骤S8；
步骤S7：报警并等待人工处置或者按规定处置；
步骤S8：结束。
也就是说，在硅片的传送片完成后和取片前，本发明通过下述两个识别子阶段完成整个检测过程：
首先，设定理想放置硅片的中心坐标和实际放置区域距该中心坐标偏差阈值；请参阅图7，图7为本发明实施例中硅片存在突出异常状态的图像示意图。如图所示，假设理论硅片中心坐标为A(xa,ya)，半径为Ra，即硅片层叠图像处于正常硅片位置(空白)区域中心；如果实际硅片层叠图像具有深灰色区域，圆周区域中心与正常硅片位置(空白)区域中心相同，半径(边缘距中心点的距离)不同为Rb，由于Rb没有超过偏差阈值，则为可以接受的偏差范围内；如果实际硅片层叠图像具有浅灰色区域，圆周区域中心与正常硅片位置(空白)区域中心相同，半径不同为Rc，已超过偏差阈值，则为不可以接受的偏差范围内。
在本发明的一些实施例中，实际硅片中心点C(xc,yc)，可以通过图像采集及识别算法求出；
Figure PCTCN2015082293-appb-000001
即计算出实际硅片中心点与理论硅片中心点的距离，即其偏心程度，可以算出硅片是否存在突出问题。图像识别方法为选择硅片与支撑机构交接的点为特征识别点，利用不在同一直线上的三点可以确定一个圆周的圆心位 置，利用群组方式，分别从总的特征点中选择三个点为一组Cn3的排列组合，分别算出圆心坐标位置，然后将所有组的圆心坐标位置进行平均，即可求得C(xc,yc)。
根据上述判断原则，用第一图像检测单元41的检测结果图像得到是否有硅片突出异常状况。请参阅图8，图8为本发明硅片突出异常状态检测一较佳实施例的指令控制流程图。硅片突出异常状态图像检测得到有硅片突出异常情况发生后，如发现有异常位置则给出异常的报警提示，等待人工处置或者按规定处置，或执行步骤S3、S4和S6(即整个由步骤S7包括的过程)；如果没有，则可以直接执行步骤S3、S4和S5。
也就是说，在步骤S7中，除等待人工处置或者按规定处置外，可以直接执行硅片的斜片、叠片和/或空片的异常状态检测步骤(即实施例1)；也可以确定凸片的具体状态即偏心或倾斜的情况，即将需要进行硅片突出异常状况的定位步骤，同时，需要执行硅片的斜片、叠片和/或空片的异常状态检测步骤(即实施例2)。
实施例1
请再参阅图5，如果步骤S2中没有识别出整个硅片组2中硅片放置是有超出偏差阈值的情况(第一识别子阶段)，那么固设于承载器3侧周正对硅片支撑结构无遮挡位置的图像传感单元42(其包括多个分布在承载器3侧周的图像传感器)，根据承载器3支撑结构移动速度和坐标差值，将随承载器3移动至其坐标位置的第一个放置硅片的位置作为起始采集位置；沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像(步骤S4)。 注意，在本发明的实施例中，承载器3是上下移动的。
接下来，用图像特征识别算法，在图像标定位置区间分布区域，从每个侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态；如果没有异常状态，就说明该识别的结果为硅片组2中硅片放置位置正常(步骤S8)；否则，就说明有异常状态存在，需报警并等待人工处置或者按规定处置(步骤S7)。第二图像传感单元42采集方向为平行于硅片表面方向(水平方向)，根据其运动速度以及基准位置的坐标差值，按指定时间间隔采集每一个硅片放置位置的分布图像，获取整个承载区域内硅片分布的状态，对所有分布位置的状态结果求与运算，结果有两种：
A.正常，则进行放片后的动作或者扫描后的取片动作。
B.异常，报出异常位置和结果供用户处置，同时根据异常结果提供用户操作选项。
具体地，请参阅图9，图9本发明实施例中判断是否存在斜片、叠片和/或空片的异常状态的一较佳实施例的具体控制流程示意图。在该实施例中，斜片、叠片和/或空片的异常状态检测时依序进行的。
请参阅图10，图10为本发明实施例中硅片和承载器的位置关系参数示意图。如果设定硅片厚度值d，示教基准位置为d/2，相邻硅片间间距为s，承载器3的支撑部件的厚度为t。
针对每一个识别位置，第二图像传感单元42根据其示教位置参数，自上而下进行运动拍照扫描，在每一个已标定位置用图像特征识别算法(如选择硅片边缘为特征提取点)，提取识别对象的分布特征，如果无硅片则特征 提取返回空，计算识别对象的在Y方向最高点和最低点坐标位置差值，求得识别对象的厚度，比对理论设定数据，存在如下的状态分类如下表1所示：
表1
Figure PCTCN2015082293-appb-000002
从上述表1中可以看出，如对于斜片情况，在运动扫描区域[2*(d+d*1/3),S-d*1/3]范围内，如果出现检测结果中深灰色区域的宽度>＝d，那么就可以断定该相应位置上出现了斜片现象，如果出现检测结果中深灰色区域的的宽度<0.1d，那么就可以断定该相应位置上没有出现斜片现象，如果出现检测结果中深灰色区域的宽度不在上述两个情况范围，那么控制单元可以向报警单元发出提醒信息或发出再次执行检测的信息，直到获取所有硅片放置位置扫描结果，如有异常位置则给出指定位置异常的报警提示，等待人工处置或者按规定处置。
此外，在本发明的一些实施例中，第二图像传感单元42包括多个图像传感器，可以实现在承载器3的侧边周围设置多个检测位置，在每一个检测位置执行一次步骤S3、S4和S5的操作，得到一组相应的检测结果；最后将 多组检测结果进行与运算，得到最终的硅片斜片、叠片和/或空片的异常状态分布，即可以对硅片在圆周上的分布状态进行更详细的检测。
且根据承载器3的支撑结构特点，多个位置点可以均匀分布，也可以不均匀分布；例如，为避开承载器3的支撑柱，可在距该支撑柱的左右10°或20°的位置重新设点检测。
对于多个位置点中相邻两个位置的间隔角度相同的情况，选择设定如下：A.当(360°/设定间隔角度)的余数＝0时：
累计检测位置数目＝360°/设定间隔角度
实际间隔角度＝设定间隔角度
B.当(360°/设定间隔角度)的余数≠0时：
累计检测位置数目＝(360°/设定间隔角度)取整(舍去小数点后)+1
实际间隔角度＝360°/累计检测位置数目
当然，如果由旋转起始点和设定间隔角度生成的检测位置坐标值与承载器3支撑点的坐标位置冲突，则需重新设定起始点和间隔角度值。
然后，就可以按无冲突的起始点和设定间隔角度生成的圆周上检测位置，获取整个承载区域内有无硅片存在斜片、叠片和/或空片的情况，每个检测位置获取一组分布状态值，然后对所有检测位置的分布位置的状态结果求与运算，总的结果有两种：
A.正常，则可以进行放置硅片后的操作或者扫描后的取片操作。
B.异常，报出异常位置和结果供用户处置，同时根据异常结果提供用户操作选项。
此外，再请参阅图6，在最后得到是否存在斜片、叠片和/或空片的检测 扫描结果后，可以进行工艺的判断步骤，该步骤的具体流程步骤已在图6中呈现，在此不再赘述。
实施例2
在本实施例中，需要在第二图像传感单元42执行硅片的斜片、叠片和/或空片的异常状态检测时，一并检测凸片的具体状态即偏心或倾斜的情况。也就是说，在第二图像传感单元42的硅片侧面图像采集步骤(步骤S3和步骤S4)中是相同的，但在硅片侧面图像的识别步骤(步骤S6)是不同的，需要增加确定凸片的具体状态即偏心或倾斜的情况。
请再参阅图5，如果步骤S2中没有识别出整个硅片组2中硅片放置是有超出偏差阈值的情况(第一识别子阶段)，那么将图像传感单元42定位于承载器3侧边周围，且将对应第一个放置硅片的位置作为垂直和水平起始点位置，然后，图像传感单元4沿硅片的平行方向，从上至下依次拍摄硅片组中2每片硅片的侧边平面图像(步骤S3)。
接下来，用图像特征识别算法，在图像标定位置区间分布区域，从每个侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态；如果没有异常状态，就说明该角度识别的结果为硅片组2中硅片放置位置正常；否则，就说明有异常状态存在，需报警并等待人工处置或者按规定处置。第二图像传感单元42采集方向为平行于硅片表面方向(水平方向)，根据其运动速度以及基准位置的坐标差值，按指定时间间隔采集每一个硅片放置位置的分布图像，获取整个承载区域内硅片分布的状态，对所有分布位置的状态结果求与运算，结果有两种：
A.正常，则进行放片后的动作或者扫描后的取片动作。
B.异常，报出异常位置和结果供用户处置，同时根据异常结果提供用户操作选项。
具体地，可参考图9，唯一不同的是，在本发明实施例中判断中，在判断是否存在凸片、斜片、叠片和/或空片的异常状态前，需先根据第二图像传感单元42采集的硅片侧面图像，判断是否存在凸片的异常状态的。且在该实施例中，凸片、斜片、叠片和/或空片的异常状态检测时依序进行的。
需要说明的是，在本实施例中，其后续步骤是与实施例中相同，在此不再赘述。此外，再请参阅图6，在最后得到是否存在斜片、叠片和/或空片的检测扫描结果后，可以进行工艺的判断步骤，该步骤的具体流程步骤已在图6中呈现，在此不再赘述。
虽然本发明已以较佳实施例披露如上，然而上述实施例并非用以限定本发明。对于任何熟悉本领域的技术人员而言，在不脱离本发明技术方案范围情况下，都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。

Claims (8)

  1. 一种具有分布图像传感单元的硅片分布状态检测方法，所述图像传感部件包括两个图像传感单元；第一图像传感单元固设于载有硅片组的承载器的上方，第二图像传感单元固设于所述承载器侧周正对硅片支撑结构无遮挡的位置；其中，第二图像传感单元包括多个固定分布在承载器侧周的图像传感器；其特征在于，所述方法包括以下步骤：
    步骤S1、设定理想放置硅片的中心坐标和实际放置区域距所述中心坐标偏差阈值；启动所述第一图像传感单元，垂直于硅片层叠的方向，俯视拍摄硅片层叠图像；
    步骤S2：从所述硅片层叠图像的放置状态特征中，识别并提取所述硅片组中所有硅片放置状态的层叠位置区域，对比该位置区域与理想放置硅片区域的关系；以及根据比较结果，判断所述硅片组中硅片放置是否有超出偏差阈值的情况；如果是，执行步骤S6，否则，执行步骤S3；
    步骤S3：预设所述承载器支撑结构的运动速度，以及所述第二图像传感单元的坐标位置，并计算所述第二图像传感单元的坐标位置与基准位置的坐标差值；
    步骤S4：所述第二图像传感单元中的每一个图像传感器根据所述的所述承载器支撑结构移动速度和坐标差值，将随所述承载器移动至其坐标位置的第一个放置硅片的位置作为起始采集位置；沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；
    步骤S5：用图像特征识别算法，在图像标定位置区间分布区域，从每个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S8；否则，执行步骤S7；
    步骤S6：用图像特征识别算法，在图像标定位置区间分布区域，从每 个所述侧边平面图像中提取识别对象的放置状态特征，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态；如果没有异常状态，执行步骤S7；否则，执行步骤S8；
    步骤S7：报警并等待人工处置或者按规定处置；
    步骤S8：结束。
  2. 根据权利要求1所述的检测方法，其特征在于，所述步骤S5中的识别对象的放置状态特征为单个硅片侧面图像边缘的分布特征，在图像标定位置区间分布区域，通过计算硅片左右边缘在Y方向最高点和最低点坐标位置差值，求得识别对象的厚度，并根据识别对象的厚度，判断相应硅片是否存在凸片、斜片、叠片和/或空片的异常状态。
  3. 根据权利要求1或2所述的检测方法，其特征在于，所述第二图像传感单元中的多个图像传感器均匀分布在整个所述承载器侧周上，选择设定如下：
    A.当(360°/设定间隔角度)的余数＝0时：
    累计检测位置数目＝360°/设定间隔角度
    实际间隔角度＝设定间隔角度
    B.当(360°/设定间隔角度)的余数≠0时：
    累计检测位置数目＝(360°/设定间隔角度)取整(舍去小数点后)+1
    实际间隔角度＝360°/累计检测位置数目
    如果由旋转起始点和设定间隔角度生成的检测位置坐标值与所述承载器支撑点的坐标位置冲突，则需重新设定起始点和间隔角度值。
  4. 一种采用权利要求1～3任一所述的具有分布图像传感单元的硅片分布状态检测方法的装置，其特征在于，包括：
    第一图像传感单元，设置于载有硅片组的承载器的上方，用于俯视拍摄层叠于所述硅片组中硅片放置状态的图像；
    第二图像传感单元，固设于所述承载器的侧周正对硅片支撑结构无遮挡的位置，第二图像传感单元包括多个分布在承载器侧周的图像传感器，用于 根据所述承载器支撑结构移动速度和坐标差值，将移动至其坐标位置的第一个放置硅片的位置作为起始采集位置，沿硅片放置的平行方向拍摄所述硅片的侧边平面图像，并按指定时间间隔对准每一个硅片的放置位置，获取整个承载区域内硅片的侧边平面图像；其中，所述坐标差值为所述第二图像传感单元的坐标位置与基准位置的差值；
    控制单元，用于启动第一、第二图像处理单元检测并处理俯视拍摄的所述硅片组中硅片的层叠图像和水平拍摄的所述硅片组中每片硅片放置状态的侧边平面图像；并根据提取的层叠位置区域和放置状态特征，得到所述硅片在承载器上的异常状态分布情况；其中，所述的异常状态包括硅片凸出、斜片、叠片和/或空片的状态；以及
    报警装置，与所述控制单元连接，所述控制单元根据异常状态分布情况控制所述报警装置的启闭。
  5. 根据权利要求4所述的装置，其特征在于，所述第一图像传感单元设置于自动开闭炉门端盖的内表面上，并随所述自动开闭炉门端盖的水平移动至所述载有硅片组的承载器的上方。
  6. 根据权利要求4所述的装置，其特征在于，所述第一图像传感单元设置于机械手上，并随所述机械手移动至所述载有硅片组的承载器的上方。
  7. 根据权利要求4所述的装置，其特征在于，所述第二图像传感单元固定设置于所述自动开闭炉门端盖的支撑柱的位置上。
  8. 根据权利要求4、5、6或7所述的装置，其特征在于，所述第二图像传感单元中的多个图像传感器均匀分布在整个所述承载器侧周上，选择设定如下：
    A.当(360°/设定间隔角度)的余数＝0时：
    累计检测位置数目＝360°/设定间隔角度
    实际间隔角度＝设定间隔角度
    B.当(360°/设定间隔角度)的余数≠0时：
    累计检测位置数目＝(360°/设定间隔角度)取整(舍去小数点后)+1
    实际间隔角度＝360°/累计检测位置数目
    如果由旋转起始点和设定间隔角度生成的检测位置坐标值与所述承载器支撑点的坐标位置冲突，则需重新设定起始点和间隔角度值。
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