WO2016189986A1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
WO2016189986A1
WO2016189986A1 PCT/JP2016/061574 JP2016061574W WO2016189986A1 WO 2016189986 A1 WO2016189986 A1 WO 2016189986A1 JP 2016061574 W JP2016061574 W JP 2016061574W WO 2016189986 A1 WO2016189986 A1 WO 2016189986A1
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Prior art keywords
protective film
film
thermosetting
chip
semiconductor wafer
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PCT/JP2016/061574
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English (en)
French (fr)
Japanese (ja)
Inventor
尚哉 佐伯
克彦 堀米
裕之 米山
善男 荒井
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to CN201680029390.2A priority Critical patent/CN107615453B/zh
Priority to KR1020177033615A priority patent/KR102528047B1/ko
Priority to JP2017520287A priority patent/JP6539919B2/ja
Priority to SG11201709671YA priority patent/SG11201709671YA/en
Publication of WO2016189986A1 publication Critical patent/WO2016189986A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a semiconductor wafer is separated into pieces by a prior dicing method and a protective film is formed on the back surface of a semiconductor chip.
  • a tip dicing method in which dicing is performed prior to back surface grinding for adjusting the wafer thickness.
  • the first dicing method for example, a notch groove is formed from the wafer surface by dicing, and then the back surface is ground so as to reach at least the bottom surface of the notch groove, and the thickness is adjusted and the semiconductor wafer is divided into chips by back surface grinding. Are performed simultaneously.
  • the chips divided by the prior dicing method are mounted after an adhesive layer (die bond) for chip fixation is formed on the back surface of the chip as disclosed in Patent Document 1, for example.
  • the adhesive film side of the composite film in which the adhesive film is laminated on the support is first attached to the wafer divided into a plurality of chips. Thereafter, the adhesive film is cut along the chip intervals of the divided chips, so that an adhesive layer made of the adhesive film is formed on the back surface of each chip.
  • Each chip having an adhesive layer formed on the back surface is picked up and peeled off from the support, and mounted on a lead frame, a substrate, etc., to manufacture a semiconductor device.
  • semiconductor devices have been manufactured by a mounting method called a face-down method.
  • a mounting method called a face-down method.
  • the circuit surface side of the semiconductor chip is bonded to a chip mounting portion such as a lead frame. Therefore, since the back surface side of the semiconductor chip on which no circuit is formed is exposed, a protective film made of a hard organic material may be formed on the back surface of the semiconductor chip to protect the semiconductor chip. .
  • the film for forming the protective film may contain a thermosetting resin.
  • a film containing a thermosetting resin is thermoset, shrinkage or the like may occur and the chip may be warped. This warping of the chip is particularly likely to occur when the singulated chip has an elongated shape or when an organic film is coated on the chip surface.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a method for manufacturing a semiconductor device in which a semiconductor chip is hardly warped even if a protective film is formed on the back surface of the chip by thermosetting. To do.
  • the present inventors have found that the above-mentioned problems can be solved by carrying out a pickup process after thermosetting a thermosetting protective film-forming film for forming a protective film. Completed. That is, the present invention provides the following (1) to (7).
  • thermosetting protective film-forming film attached to the semiconductor wafer to form a protective film
  • thermosetting protective film-forming film is thermally cured to be a protective film in a state where the protective film-forming film with a support is held by a ring frame.
  • Semiconductor device manufacturing method (6) The method for manufacturing a semiconductor device according to any one of (1) to (5), wherein the semiconductor wafer has a surface coated with an organic film. (7) The method for manufacturing a semiconductor device according to any one of (1) to (6), wherein the chip has an elongated shape.
  • the semiconductor chip is hardly warped.
  • thermosetting a thermosetting protective film formation film in the manufacturing method of a semiconductor device. It is typical sectional drawing which shows the process of dividing
  • weight average molecular weight (Mw) is a value in terms of polystyrene measured by a gel permeation chromatography (GPC) method.
  • GPC gel permeation chromatography
  • (meth) acrylate is used as a term indicating both “acrylate” and “methacrylate”, and the same applies to other similar terms.
  • the method for manufacturing a semiconductor device of the present invention includes the following steps (i) to (v).
  • thermosetting step in which the thermosetting protective film forming film attached to the semiconductor wafer is thermally cured to form a protective film; and (v) the protective film is laminated on the chip after the thermosetting step.
  • Pickup Step for Picking Up the Protected Film-Chip Chip The semiconductor device manufacturing method of the present invention preferably further includes the following step (vi).
  • Vi A protective film dividing step of cutting the thermosetting protective film forming film or protective film attached to the back surface of the semiconductor wafer along the chip interval and dividing it into a shape corresponding to each chip.
  • FIGS. 1 to 7 are diagrams showing a method of manufacturing a semiconductor device according to the first embodiment of the present invention in time series.
  • the groove is formed in the pretreatment process.
  • a pretreatment process for forming the grooves 11 from the surface side of the semiconductor wafer 10 is performed.
  • the groove 11 formed in this step is a groove having a depth shallower than the thickness of the wafer 10.
  • the groove 11 can be formed by using a conventionally known wafer dicing apparatus or the like.
  • the semiconductor wafer 10 is divided into a plurality of semiconductor chips along the grooves 11 in a chip singulation process described later.
  • the semiconductor wafer 10 used in the present embodiment may be a silicon wafer or a wafer of gallium / arsenic.
  • the thickness of the semiconductor wafer 10 before grinding is not particularly limited, but is usually about 500 to 1000 ⁇ m.
  • the surface of the semiconductor wafer 10 is preferably coated with an organic film 13 as shown in FIG. Although it does not specifically limit as the organic film 13, Although a polyimide, polybenzoxazole, and silicone are mentioned, In these, a polyimide is preferable.
  • the surface of the semiconductor wafer 10 can be protected by providing the organic film 13. Moreover, since the semiconductor wafer 10 tends to be warped more when the organic film 13 is provided, the demand for the effect of suppressing the warpage is larger.
  • the semiconductor wafer 10 has a circuit 12 formed on the surface thereof. Formation of the circuit 12 on the wafer surface can be performed by various methods including a conventionally widely used method such as an etching method and a lift-off method.
  • FIG. 2 shows a state where the back grind tape 16 is stuck on the wafer surface where the grooves 11 are formed.
  • the back grind tape 16 includes a back grind tape base material and a back grind tape pressure-sensitive adhesive layer provided on the base material, and is attached to the semiconductor wafer 10 via the pressure-sensitive adhesive layer. It is preferable.
  • the materials used for the base material for back grind tape and the pressure-sensitive adhesive layer for back grind tape can be appropriately selected from known materials.
  • the pressure-sensitive adhesive layer for back grind tape can be selected from an energy ray curable pressure-sensitive adhesive.
  • the back grind tape 16 is affixed to the surface of the semiconductor wafer 10, the semiconductor wafer 10 is separated into a plurality of chips 15 on the single back grind tape 16. Can be handled integrally without any positional deviation. Further, the circuit 12 can be protected when the back surface of the wafer 10 is ground. However, the attachment of the back grind tape 16 to the wafer can be omitted.
  • the grinding of the semiconductor wafer is performed on the back surface of the semiconductor wafer 10 so as to reach at least the bottom of the groove 11.
  • the groove becomes a notch 11A penetrating the wafer as shown in FIG. 3, and the semiconductor wafer 10 is divided by the notch 11A and separated into individual semiconductor chips 15.
  • the shape of the separated semiconductor chip 15 may be a square or an elongated shape, but is preferably an elongated shape. In the present invention, the elongated semiconductor chip 15 is more likely to be warped, so that the demand for the effect of suppressing warpage is greater.
  • the elongated shape is such that the chip length is larger than the chip width, but the ratio of the chip length to the chip width (aspect ratio) is preferably 2 or more, more preferably 4 or more, More preferably, it is 10 or more.
  • the upper limit of the aspect ratio is not particularly limited, but is usually about 100 or less, preferably 50 or less.
  • the elongated semiconductor chip 15 is preferably rectangular but is not particularly limited.
  • the thickness of the individual chip is not particularly limited, but is usually about 10 to 300 ⁇ m, preferably 50 to 200 ⁇ m.
  • the protective film-forming film 20 with a support includes a support 21 and a thermosetting protective film-forming film 22 provided on the support 21.
  • the support 21 is not particularly limited as long as it is a sheet that can support the thermosetting protective film-forming film 22, but as shown in FIG. 4, the support 21 is provided on one surface of the base 21A and the base 21A. It is preferable that the thermosetting protective film forming film 22 is bonded onto the pressure-sensitive adhesive layer 21B.
  • the detail of each member of the protective film formation film 20 with a support body is mentioned later.
  • the support-equipped protective film forming film 20 is attached to the back surface of the semiconductor wafer 10 that is separated into a plurality of chips 15 as shown in FIG. 4. Moreover, it is preferable that the outer peripheral area
  • the back grind tape pressure-sensitive adhesive layer of the back grind tape 16 is formed of an energy ray curable pressure-sensitive adhesive
  • the energy rays are applied to the back grind tape pressure-sensitive adhesive layer. It is preferable to cure by irradiation. In general, ultraviolet rays, electron beams, and the like are used as energy rays.
  • the support 21 is slightly larger than the thermosetting protective film forming film 22 in the plane direction as shown in FIG. Since the support 21 is slightly larger, the thermosetting protective film forming film 22 is disposed on the central region, and the outer peripheral region surrounding the central region is not provided with the thermosetting protective film forming film 22. Thus, the outer peripheral region can be easily attached to the ring frame 25. Moreover, it is preferable that the support body 21 is affixed on the ring frame 25 via the adhesive layer 21B.
  • the protective film-forming film 20 with a support may be provided with a ring frame pressure-sensitive adhesive layer 23 on a thermosetting protective film-forming film 22.
  • the thermosetting protective film forming film 22 is slightly larger than the semiconductor wafer 10, and its central region becomes a region to be attached to the semiconductor wafer 10, and a ring-shaped ring is formed in the outer peripheral region surrounding the center.
  • a frame pressure-sensitive adhesive layer 23 is provided.
  • the protective film-forming film 20 with the support is attached to the ring frame 25 via the ring frame pressure-sensitive adhesive layer 23.
  • the ring frame adhesive layer 23 is formed of an adhesive such as an acrylic adhesive, a rubber adhesive, a silicone adhesive, a urethane adhesive, a polyester adhesive, and a polyvinyl ether adhesive.
  • thermosetting process After the above-described pasting step, a thermosetting step is performed by thermosetting the thermosetting protective film forming film 22 to form the protective film 22A.
  • the thermosetting process is performed in the oven 30, for example. That is, as shown in FIG. 5, the protective film-forming film 20 with a support to which a plurality of semiconductor chips 15 are attached is preferably transported into the oven 30 while being attached to the ring frame 25. Heat to cure.
  • the heating in the oven 30 may be performed at a temperature and a heating time at which the thermosetting protective film forming film 22 can be cured, and the temperature is preferably 70 to 175 ° C., more preferably 80 to 150 ° C. Is preferably 30 to 180 minutes, more preferably 60 to 120 minutes.
  • the semiconductor wafer 10 is divided into chips 15 by the notches 11A, and the protective film 22A is cut along the notches 11A between the individual chips 15.
  • the protective film 22A is cut by laser irradiation, a dicing blade, an expansion of the support 21 or the like, but is preferably performed by laser irradiation.
  • the laser light emitted from the laser light source 26 is irradiated from the surface side of the semiconductor chip 15 to the protective film 22A through the cut 11A.
  • the shape of the divided protective film 22 ⁇ / b> A easily corresponds to the shape of the semiconductor chip 15.
  • the cutting of the protective film 22A does not have to be performed so that the protective film 22A is completely cut, and may be partially cut so that the protective films 22A can be separated from each other in a pickup process or the like described later.
  • Such an aspect is also included in one aspect of the protective film dividing step in the present invention.
  • the plurality of chips 15 on the support 21 may be washed with a spinner or the like after the protective film 22A is cut.
  • the chip with protective film 24 in which the protective film 22 ⁇ / b> A is laminated on each semiconductor chip 15 is picked up and peeled off from the support 21.
  • the support 21 may be expanded in the surface direction before picking up so as to be easily picked up.
  • the chip 24 with the protective film peeled off from the support 21 is bonded to a chip mounting portion such as a lead frame by a method called a face down method, for example, to obtain a semiconductor device.
  • a pretreatment process for forming the modified region 17 on the semiconductor wafer 10 is performed.
  • the modified region 17 is an embrittled portion of the semiconductor wafer 10, and the semiconductor wafer 10 is destroyed due to thinning of the semiconductor wafer 10 or application of grinding force due to grinding in the grinding process.
  • This is a region serving as a starting point of being separated into semiconductor chips.
  • the modified region 17 can be formed by laser irradiation focused on the inside of the semiconductor wafer 10. Laser irradiation may be performed from the front surface side of the semiconductor wafer 10 or from the back surface side.
  • the surface of the semiconductor wafer 10 is preferably coated with the organic film 13 as in the first embodiment.
  • the semiconductor wafer 10 has a circuit 12 formed on the surface thereof as in the first embodiment.
  • the drawings showing the steps other than the pretreatment described below are the same as those in the first embodiment, and are omitted. However, the cut 11A shown in FIGS. 3 to 6 is not formed.
  • a back grind tape 16 is affixed to the wafer surface on which the modified region 17 is formed.
  • the pasting of the back grind tape 16 may be omitted.
  • the back surface of the semiconductor wafer 10 is ground and separated into a plurality of chips along the modified region 17.
  • the grinding surface wafer back surface
  • the semiconductor wafer starts from the modified region 17. What is necessary is just to grind to the position close
  • the protective film dividing step preferably divides the protective film by expanding the support 21.
  • the support 21 may be expanded while heating or cooling the protective film 22A in accordance with the properties of the protective film 22A.
  • the protective film dividing step is performed between the thermosetting step and the pickup step, but the protective film dividing step is performed between the attaching step and the thermosetting step. Also good.
  • the protective film dividing step is performed between the pasting step and the thermosetting step, the thermosetting protective film forming film 22 before thermosetting is cut and divided in the protective film dividing step. Since the other steps are the same as described above, the description thereof is omitted.
  • Laser marking may be performed on the thermosetting protective film forming film 22 or the protective film 22A.
  • Laser marking is a method of marking by irradiating a laser beam and scraping off the surface of the thermosetting protective film forming film 22 or the protective film 22A.
  • the laser marking may be performed after the thermosetting protective film forming film 22 is attached to the semiconductor chip 15, but is preferably performed after the thermosetting process, and more preferably performed between the thermosetting process and the pickup process. .
  • laser marking is normally performed by irradiating the surface of the protective film 22A or the protective film forming film 22 with laser light from the support 21 side through the support 21.
  • thermosetting protective film forming film 22 is subjected to a thermosetting process while being supported by the support 21. Therefore, since the thermosetting protective film forming film 22 becomes a cured product with almost no shrinkage due to heat curing, the semiconductor chip 15 is hardly warped. Furthermore, in the present invention, by adopting the tip dicing method, the wafer is divided when the wafer is thinned during backside grinding, so that it is easy to prevent warpage of the wafer, thereby preventing individual warpage of the semiconductor chip. It becomes easy to do. Further, even if the wafer 10 is warped during back surface grinding, each semiconductor chip 15 follows the thermosetting protective film forming film 22 that is thermally cured in the thermosetting process, so that the flatness is improved and the warpage is increased. The amount can be reduced.
  • thermosetting protective film formation film 22 is not divided
  • the individual chips 15 are collectively held on the thermosetting protective film forming film 22 in the thermosetting process, so that the movement of each chip to be warped independently is prevented, and the warp is more effective. Can be suppressed.
  • the support 21 is stuck to the ring frame 25 at the time of thermosetting, the semiconductor chip 15 and the support 21 are integrally supported by the ring frame 25. Prevent warpage more effectively.
  • the semiconductor wafer 10 and the semiconductor chip 15 are likely to warp due to the thermal contraction of the organic film 13, but as described above, the tip dicing method is adopted and By performing the pick-up process after the curing process, warping caused by the organic film 13 is effectively prevented. Similarly, warping is likely to occur even in the elongated semiconductor chip 15, but such warping is effectively prevented by adopting a tip dicing method and performing a pick-up process after the thermosetting process. Further, the thermosetting protective film forming film 22 is cured to become a protective film 22A, and thus tackiness is lost. Therefore, by performing the protective film cutting step after the thermosetting step, debris generated by cutting the protective film 22A is less likely to adhere on the chip.
  • the base material 21A of the support 21 used for the protective film forming film 20 with the support is not limited as long as it is suitable for the processing of the semiconductor wafer 10, and is usually a resin mainly composed of a resin-based material. Consists of film. Specific examples of resin films include polyethylene films such as low density polyethylene (LDPE) films, linear low density polyethylene (LLDPE) films, and high density polyethylene (HDPE) films, polypropylene films, polybutene films, polybutadiene films, and polymethylpentene films.
  • LDPE low density polyethylene
  • LLDPE linear low density polyethylene
  • HDPE high density polyethylene
  • Polyolefin films such as ethylene-norbornene copolymer film and norbornene resin film; ethylene-vinyl acetate copolymer film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid ester copolymer Ethylene copolymer film such as film; Polyvinyl chloride film such as polyvinyl chloride film and vinyl chloride copolymer film; Polyethylene terephthalate film, Polybutylene tele Polyester film of tallate films; polyurethane film; polyimide film; polystyrene films; polycarbonate films; and fluorine resin film. Further, modified films such as these crosslinked films and ionomer films are also used.
  • the substrate may be a film made of one of these, or may be a laminated film in which two or more of these are combined.
  • the resin film is a polyethylene terephthalate film, from the viewpoint of versatility, from the viewpoint of relatively high strength and easy to prevent warpage, from the viewpoint of preventing the chip from moving in the above-mentioned attaching process, from the viewpoint of heat resistance, Polyester films such as polybutylene terephthalate and polypropylene films are preferred.
  • the substrate may be a single layer film or a laminated film as long as the substrate has at least one layer selected from the group consisting of a polyester film and a polypropylene film.
  • the base material has a polypropylene film from the viewpoint that the expansion in the pickup process can be easily performed, and also in the pickup itself, the protective film and the like are easily peeled off from the support.
  • a laminated film combining a polypropylene film and another type of film for example, a substrate described in International Publication No. WO2013 / 172328 may be used.
  • the thickness of the substrate 21A is not particularly limited, but is preferably 20 to 450 ⁇ m, more preferably 25 to 400 ⁇ m.
  • the pressure-sensitive adhesive layer 21B of the support 21 used for the protective film-forming film 20 with a support is an acrylic pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, and a polyvinyl ether-based.
  • an adhesive etc. can be used, an acrylic adhesive is preferable in these.
  • the acrylic pressure-sensitive adhesive contains the acrylic copolymer (a1) as a main component (adhesive main agent), and the acrylic copolymer (a1) includes, for example, a structural unit derived from a functional group-containing monomer. And a structural unit derived from a (meth) acrylic acid ester monomer other than the functional group-containing monomer or a derivative thereof.
  • the functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) is a monomer having a polymerizable double bond and a functional group such as a hydroxyl group, an amino group, a substituted amino group, or an epoxy group in the molecule. It is preferable that Specific examples of the functional group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and the like. These are used alone or in combination of two or more.
  • Examples of the (meth) acrylic acid ester monomer constituting the acrylic copolymer (a1) include alkyl (meth) acrylates having 1 to 20 carbon atoms in the alkyl group, cycloalkyl (meth) acrylates, and benzyl (meth) acrylates. Is used. Among these, particularly preferred are alkyl (meth) acrylates having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and n-butyl (meth) acrylate. 2-ethylhexyl (meth) acrylate or the like is used.
  • the acrylic copolymer (a1) usually contains 3 to 50% by mass, preferably 5 to 35% by mass of a structural unit derived from the functional group-containing monomer, and is a (meth) acrylic acid ester monomer or its
  • the structural unit derived from the derivative is usually contained in a proportion of 40 to 97% by mass, preferably 60 to 95% by mass.
  • the acrylic copolymer (a1) is derived from other monomers such as dimethylacrylamide, vinyl formate, vinyl acetate, and styrene in addition to the functional group-containing monomer and the structural unit derived from the (meth) acrylic acid ester monomer or its derivative. You may have the structural unit.
  • the pressure-sensitive adhesive layer may be made of a material obtained by curing an energy ray-curable pressure-sensitive adhesive such as an ultraviolet curable type or an electron beam curable type.
  • an energy ray-curable pressure sensitive adhesive such as an ultraviolet curable type or an electron beam curable type.
  • the energy ray curable pressure sensitive adhesive there is a so-called intrinsic energy ray curable pressure sensitive adhesive using an acrylic copolymer having a radical reactive carbon-carbon double bond in the molecule as a main component (adhesive main agent).
  • the main component of the internal energy ray-curable pressure-sensitive adhesive is, for example, a substituent bonded to the functional group of the acrylic copolymer (a1) and a radical reactive carbon-carbon to the acrylic copolymer (a1). It is obtained by reacting an unsaturated group-containing compound having a double bond.
  • the energy ray-curable pressure-sensitive adhesive is mainly composed of a mixture of a polymer component having no energy ray curability, such as the acrylic copolymer (a1), and an energy ray curable polyfunctional monomer and / or oligomer. It may be a so-called additive type energy ray curable pressure sensitive adhesive.
  • a polymer component having no energy ray curability such as the acrylic copolymer (a1)
  • an energy ray curable polyfunctional monomer and / or oligomer may be a so-called additive type energy ray curable pressure sensitive adhesive.
  • the energy ray-curable polyfunctional monomer and / or oligomer for example, an ester of a polyhydric alcohol and (meth) acrylic acid or the like can be used.
  • the pressure-sensitive adhesive may further contain a crosslinking agent, a photopolymerization initiator, etc., if necessary, in addition to a pressure-sensitive adhesive main agent such as an acrylic copolymer.
  • the polyfunctional compound which has the reactivity with the functional group contained in polymers (adhesive main ingredient), such as an acryl-type copolymer can be used.
  • examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts. And reactive phenol resins.
  • the thickness of the pressure-sensitive adhesive layer 21B is not particularly limited, but is preferably about 1 to 50 ⁇ m, and more preferably 2 to 30 ⁇ m.
  • the support 21 is not limited to the above configuration as long as the thermosetting protective film-forming film 22 is attached and can support the film 22.
  • the pressure-sensitive adhesive layer may be omitted.
  • the support 21 may have a layer formed from, for example, a silicone release agent.
  • the thermosetting protective film forming film 22 is preferably made of an uncured thermosetting adhesive.
  • the thermosetting protective film forming film 22 is bonded to the semiconductor wafer 10 (semiconductor chip 15) and then thermally cured, whereby the protective film 22A can be firmly bonded to the semiconductor wafer 10 and has excellent durability.
  • the protective film 22A can be formed on the chip 15.
  • the thermosetting protective film-forming film 22 preferably has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, it can stick easily to the semiconductor wafer 10 (semiconductor chip 15).
  • the thermosetting adhesive preferably contains a thermosetting component and a binder polymer component.
  • thermosetting component examples include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, benzoxazine resins, and mixtures thereof.
  • an epoxy resin, a phenol resin, and a mixture thereof are preferably used.
  • Epoxy resins have the property of forming a three-dimensional network upon heating and forming a strong film.
  • an epoxy resin conventionally known various epoxy resins are used, and those having a molecular weight of about 300 to 2000 are usually preferred, and those having a molecular weight of 300 to 500 are particularly preferred. Further, it is preferably used in a form in which a normal and liquid epoxy resin having a molecular weight of 330 to 400 is blended with a solid epoxy resin having a molecular weight of 400 to 2500, particularly 500 to 2000 at room temperature.
  • the epoxy equivalent of the epoxy resin is preferably 50 to 5000 g / eq.
  • epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; Glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, tetrahydrophthalic acid; glycidyl type or alkyl glycidyl type epoxy resins in which active hydrogen bonded to nitrogen atom such as aniline isocyanurate is substituted with glycidyl group; vinylcyclohexane diepoxide; 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4 As the epoxy) cyclohexane
  • an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like, a dicyclopentadiene type epoxy resin, or the like can also be used.
  • bisphenol glycidyl type epoxy resins, o-cresol novolak type epoxy resins and phenol novolak type epoxy resins are preferably used. These epoxy resins can be used alone or in combination of two or more.
  • thermally activated latent epoxy resin curing agent is a type of curing agent that does not react with the epoxy resin at room temperature but is activated by heating at a certain temperature or more and reacts with the epoxy resin.
  • the heat activated latent epoxy resin curing agent is activated by a method in which active species (anions and cations) are generated by a chemical reaction by heating; the epoxy resin is stably dispersed in the epoxy resin at around room temperature and is heated at a high temperature.
  • thermally active latent epoxy resin curing agent examples include various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, high melting point active hydrogen compounds such as imidazole compounds, and the like. These thermally activated latent epoxy resin curing agents can be used singly or in combination of two or more.
  • the heat-activatable latent epoxy resin curing agent as described above is preferably 0.1 to 20 parts by weight, particularly preferably 0.2 to 10 parts by weight, and still more preferably 0.8 to 100 parts by weight of the epoxy resin. It is used at a ratio of 3 to 5 parts by weight.
  • phenolic resin a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol and aldehydes is used without particular limitation.
  • phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin, or modified products thereof Etc. are used.
  • the phenolic hydroxyl group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating to form a cured product having high impact resistance. For this reason, you may use together an epoxy resin and a phenol resin.
  • the binder polymer component can give an appropriate tack to the thermosetting protective film forming film 22 and improve the operability of the protective film forming film 20 with the support.
  • the weight average molecular weight of the binder polymer is usually in the range of 50,000 to 2,000,000, preferably 100,000 to 1,500,000, particularly preferably 200,000 to 1,000,000. If the molecular weight is too low, film formation of the thermosetting protective film-forming film 22 becomes insufficient, and if it is too high, compatibility with other components is deteriorated, and as a result, uniform film formation is prevented.
  • binder polymer for example, an acrylic polymer, a polyester resin, a phenoxy resin, a urethane resin, a silicone resin, a rubber polymer, and the like are used, and an acrylic polymer is particularly preferably used.
  • acrylic polymer examples include (meth) acrylic acid ester copolymers composed of structural units derived from (meth) acrylic acid derivatives.
  • examples of the (meth) acrylic acid derivative include (meth) acrylic acid ester monomers in addition to (meth) acrylic acid itself.
  • a (meth) acrylic acid ester copolymer contains the structural unit derived from a (meth) acrylic acid ester monomer.
  • the (meth) acrylic acid ester monomer is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, (meth) acrylic.
  • Propyl acid, butyl (meth) acrylate, etc. are used.
  • the (meth) acrylic acid ester monomer etc. which have epoxy groups and hydroxyl groups, such as glycidyl (meth) acrylate and hydroxyethyl (meth) acrylate, can be mentioned.
  • the glass transition temperature (Tg) after hardening becomes high and heat resistance improves.
  • the weight average molecular weight of the polymer is preferably 100,000 or more, and particularly preferably 150,000 to 1,000,000.
  • the glass transition temperature of the acrylic polymer is usually 30 ° C. or lower, preferably about ⁇ 70 to 10 ° C.
  • the blending ratio of the thermosetting component and the binder polymer component is preferably 50 to 1500 parts by weight, more preferably 70 to 1000 parts by weight, and still more preferably 100 parts by weight of the binder polymer component. Mix 80 to 800 parts by weight.
  • the thermosetting protective film forming film 22 may contain at least one of a colorant and a filler. Thereby, the light transmittance of the protective film 22A is controlled within a desired range, and laser printing with excellent visibility is enabled. Moreover, when the thermosetting protective film forming film 22 contains a filler, the hardness of the cured protective film 22A can be maintained high, and the moisture resistance can be improved. Furthermore, the thermal expansion coefficient of the protective film 22A after curing can be made closer to the thermal expansion coefficient of the semiconductor chip 15, which makes it possible to further reduce the warpage of the semiconductor chip 15.
  • inorganic pigments such as inorganic pigments, organic pigments and organic dyes can be used, but organic pigments or organic dyes are preferably used.
  • inorganic pigments include carbon black, cobalt dyes, iron dyes, chromium dyes, titanium dyes, vanadium dyes, zirconium dyes, molybdenum dyes, ruthenium dyes, platinum dyes, ITO (indium) Tin oxide) dyes, ATO (antimony tin oxide) dyes, and the like.
  • organic pigments and organic dyes include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squalium dyes, azurenium dyes, polymethine dyes, naphthoquinone dyes, pyrylium dyes, and phthalocyanine dyes.
  • a pigment particularly an inorganic pigment
  • carbon black is particularly preferable.
  • Carbon black is usually black, and the contrast difference between the portion where the concave portion is formed and the non-irradiated portion is increased by laser light irradiation, so that the visibility of the laser printed portion is very excellent.
  • the filler examples include silica such as crystalline silica, fused silica, and synthetic silica, and inorganic filler such as alumina and glass balloon.
  • synthetic silica is preferable, and synthetic silica of the type from which ⁇ -ray sources that cause malfunction of the semiconductor device are removed as much as possible is most suitable.
  • the shape of the filler may be spherical, acicular, or indefinite.
  • a functional filler may be mix
  • a conductive filler in which gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramic, nickel, aluminum, or the like is coated with silver for the purpose of imparting conductivity after die bonding.
  • metal materials such as gold, silver, copper, nickel, aluminum, stainless steel and alloys thereof for the purpose of imparting thermal conductivity, oxides or nitrides of these metal materials, non-metals such as silicon and germanium,
  • thermally conductive fillers such as non-metallic nitrides such as boron.
  • the blending amount of the colorant is usually preferably 0.001 to 5% by mass, particularly preferably 0.01 to 3% by mass, and further preferably 0.1 to 2.5% by mass. Is preferred. Further, the blending amount of the filler is usually preferably 40 to 80% by mass, particularly preferably 50 to 70% by mass.
  • the thermosetting protective film forming film 22 may contain a coupling agent.
  • a coupling agent By containing the coupling agent, after the thermosetting protective film forming film 22 is cured, the adhesiveness and adhesion between the protective film 22A and the chip 15 are improved without impairing the heat resistance of the protective film 22A. Water resistance (moisture heat resistance) can be improved.
  • a silane coupling agent is preferable because of its versatility and cost merit.
  • silane coupling agent examples include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ - (methacryloxy).
  • the thermosetting protective film forming film 22 may contain a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, and an organometallic chelate compound in order to adjust the cohesive force before curing. Further, the thermosetting protective film forming film 22 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip. Furthermore, the thermosetting protective film forming film 22 contains a flame retardant such as a phosphoric acid compound, a bromine compound, and a phosphorus compound in order to enhance the flame retardance performance of the protective film and improve the reliability as a package. Also good.
  • a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, and an organometallic chelate compound in order to adjust the cohesive force before curing.
  • the thermosetting protective film forming film 22 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip.
  • the thermosetting protective film forming film 22 contains a flame retardant such as
  • the thickness of the thermosetting protective film-forming film 22 is preferably 3 to 300 ⁇ m, particularly preferably 5 to 250 ⁇ m, more preferably 7 to It is preferable that it is 200 micrometers.
  • the protective film-forming film 20 with a support may be protected by a release sheet before use.
  • the release sheet is laminated on the surface of the thermosetting protective film forming film 22 opposite to the surface on the support 21 side, the thermosetting protective film forming film 22 exposed to the outside, and the pressure-sensitive adhesive layer. 21B etc. are protected.
  • Examples of the release sheet include those obtained by peeling a plastic film with a release agent or the like. The release sheet is peeled off before the protective film-forming film 20 with the support is attached to the semiconductor chip 15 (semiconductor wafer 10).
  • the protective film-forming film 20 with a support can be prepared by preparing a protective film-forming film laminate and a support and bonding them together.
  • a protective film formation film laminated body is produced as follows, for example.
  • a coating solution for a protective film-forming film obtained by mixing each component constituting the thermosetting protective film-forming film in an appropriate ratio in an appropriate solvent or without a solvent is applied and dried on the first release sheet.
  • a thermosetting protective film forming film is formed on the first release sheet.
  • a second release sheet is further pasted on the thermosetting protective film forming film to form a protective film having a three-layer structure of first release sheet / thermosetting protective film forming film / second release sheet.
  • a film laminate is obtained.
  • the protective film-forming film laminate may be stored, transported, etc. as a take-up roll.
  • the process of sticking a 2nd peeling sheet is abbreviate
  • a method for producing a support in the case where the support includes a substrate and a pressure-sensitive adhesive layer provided on one surface of the substrate will be described.
  • a coating solution for the pressure-sensitive adhesive layer obtained by mixing each component constituting the pressure-sensitive adhesive layer in an appropriate ratio in an appropriate solvent or without a solvent onto the release sheet and drying it A support with a release sheet is obtained by forming a pressure-sensitive adhesive layer and then bonding a substrate to the pressure-sensitive adhesive layer.
  • the support with release sheet may be stored, transported, etc. as a take-up roll.
  • the adhesive layer coating solution on the release sheet instead of coating the adhesive layer coating solution on the release sheet, it is applied directly to the substrate to form the adhesive layer, and then the release sheet is further bonded to the adhesive layer, with the release sheet. It is good also as a support body.
  • the step of attaching the release sheet may be omitted and the pressure-sensitive adhesive layer may be left exposed.
  • the pressure-sensitive adhesive layer provided on the substrate is made of an energy ray-curable pressure-sensitive adhesive
  • the pressure-sensitive adhesive is applied with energy rays before being bonded to the thermosetting protective film-forming film. It may be cured by irradiation, or may be cured by irradiation with energy rays after being bonded to a thermosetting protective film forming film.
  • the adhesive When the adhesive is irradiated with energy rays after being bonded to the thermosetting protective film-forming film, the energy rays may be irradiated at any stage of the above-described sticking step to pick-up step.
  • the pressure-sensitive adhesive In the curing of the pressure-sensitive adhesive by irradiation with energy rays, at least a portion in contact with the thermosetting protective film forming film may be cured.
  • the protective film-forming film laminate is the same size or slightly larger than the wafer so as to cut one release sheet (for example, the second release sheet) and the thermosetting protective film-forming film. For example, it is performed by half-cutting into a circle and then removing one of the release sheet and the thermosetting protective film-forming film that exists outside the half-cut circle.
  • the support may be appropriately cut and its shape adjusted accordingly.
  • a protective film-forming film with a support can be produced in the same manner, but is bonded to a support of a thermosetting protective film-forming film.
  • a ring frame pressure-sensitive adhesive layer may be appropriately formed on the surface opposite to the surface to be bonded.
  • the chip with protective film after pick-up was evaluated by the following method.
  • ⁇ Chip warpage> As shown in FIG. 10, the chip 24 with the protective film after pick-up is placed on the glass plate 40 with the chip surface facing upward, and the difference between the lowest position S and the highest position H of the chip 24 is determined. The amount of warpage was measured. The case where the chip warpage amount was 300 ⁇ m or less was evaluated as “A”, the case where it was over 300 ⁇ m and 600 ⁇ m or less was evaluated as “B”, the case where it was over 600 ⁇ m and 1 mm or less was evaluated as “C”, and the case where it was larger than 1 mm was evaluated as “D”.
  • Example 1 Preparation of protective film-forming film laminate First, the following components (a) to (f) are mixed, diluted with methyl ethyl ketone so that the solid content concentration becomes 61% by mass, and applied for a protective film-forming film. A liquid was obtained.
  • Binder polymer 100 parts by weight of (meth) acrylate copolymer obtained by copolymerizing 10 parts by weight of n-butyl acrylate, 70 parts by weight of methyl acrylate, 5 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate (In terms of solid content, the same applies hereinafter); weight average molecular weight: 800,000, glass transition temperature: ⁇ 1 ° C.
  • Thermosetting component 60 parts by mass of bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, jER828, epoxy equivalent 184 to 194 g / eq), bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, jER1055, epoxy equivalent) 800-900 g / eq) 10 parts by mass, and dicyclopentadiene type epoxy resin (Dainippon Ink Chemical Co., Ltd., Epicron HP-7200HH, epoxy equivalent 255-260 g / eq) 30 parts by mass (c) Thermally active latency Epoxy resin curing agent: 2 parts by mass of dicyandiamide (ADEKA Corporation, Adeka Hardener EH-3636AS, active hydrogen amount 21 g / eq), and 2-phenyl-4,5-dihydroxymethylimidazole (Shikoku Kasei Kogyo Co., Ltd., Curazole) 2PHZ) 2 parts by mass (d) arrival Agent: Carbon black (Mitsubishi Chemical Corporation, #
  • thermosetting protective film-forming film coating solution was applied onto the release-treated surface of the first release sheet (Lintec Corporation, SP-PET3811, thickness 38 ⁇ m), dried in an oven at 120 ° C. for 2 minutes, A thermosetting protective film-forming film was formed on 1 release sheet. The thickness of the formed thermosetting protective film-forming film was 25 ⁇ m.
  • the release-treated surface of the second release sheet (SP-PET 381031, thickness 38 ⁇ m, manufactured by Lintec Corporation) is bonded to this thermosetting protective film-forming film, and the first release sheet / thermosetting protective film-forming film is attached.
  • the protective film formation film laminated body which consists of a 3 layer structure of a 2nd peeling sheet was obtained. This laminated body was long and was wound up to obtain a wound body.
  • the wound body of the long protective film-forming film laminate obtained above was cut into a width direction of 300 mm.
  • the second release sheet and the thermosetting protective film-forming film are cut from the side of the second release sheet so that the laminate has a diameter of 220 mm at the center in the width direction.
  • a circular half cut was made continuously.
  • the 2nd peeling sheet and thermosetting protective film formation film which exist outside the circle formed by half cut were removed.
  • the protective film formation film laminated body became what laminated
  • Adhesive main agent (meth) acrylic acid ester copolymer (copolymer obtained by copolymerizing 40 parts by mass of butyl acrylate, 55 parts by mass of 2-ethylhexyl acrylate, and 5 parts by mass of 2-hydroxylethyl acrylate) , Weight average molecular weight: 600,000) 100 parts by mass
  • Crosslinker aromatic polyisocyanate compound (Mitsui Chemicals, Takenate D110N) 10 parts by mass
  • the above-mentioned adhesive layer coating agent was applied with a knife coater and dried to form an adhesive layer.
  • the thickness of the formed pressure-sensitive adhesive layer was 10 ⁇ m.
  • the base material which consists of a 100-micrometer-thick polypropylene film (Mitsubishi Resin make, brand name "CT265") was bonded together to the adhesive layer, and the support body with a peeling sheet was obtained.
  • the support with a release sheet is long, and after winding up to form a roll, it was cut in the width direction of 300 mm.
  • the obtained protective film-forming film with a support was cut into the base material and the pressure-sensitive adhesive layer from the base material side, and a thermosetting protective film-forming film with a diameter of 220 mm was laminated on the support with a diameter of 270 mm. It was set as the protective film formation film with a support body.
  • this protective film-forming film with a support is one in which the thermosetting protective film-forming film side is protected by the first release sheet.
  • Chip individualization step Next, using a laminator RAD-3510F / 12 manufactured by Lintec Corporation, a back grind tape 16 (Adwill E-3125 manufactured by Lintec Corporation) was attached to the surface of the wafer 10, and then the stock The wafer 10 was ground from the back side to a thickness of 150 ⁇ m using a company DISCO grinder DFG8760, and the wafer 10 was divided into a plurality of chips 15 (see FIGS. 2 and 3).
  • Affixing step The protective film-forming film 20 with the support having the first release sheet peeled off on the back surface of the wafer 10 separated into chips 15 using a mounter RAD-2700F / 12 manufactured by Lintec Corporation at a temperature of 70 Affixed at °C.
  • the ring frame 25 was stuck to the outer peripheral area
  • the back grind tape 16 was irradiated with UV under the condition of 500 mJ / cm 2 to cure the back grind tape pressure-sensitive adhesive layer, and then the back grind tape 16 was peeled off.
  • Thermosetting step Next, the protective film-forming film 20 with the support to which the plurality of chips 15 and the ring frame 25 are attached is left in an oven 30 at 130 ° C. for 2 hours to form a thermosetting protective film-forming film 22. Was cured to form a protective film 22A (see FIG. 5).
  • Protective film dividing step Thereafter, using a laser dicer DFL7160 manufactured by DISCO Corporation, the protective film 22A exposed between the chips 15 was cut with a laser to divide the protective film 22A, and then washed with a spinner (FIG. 6).
  • Pickup process Next, each protective film-provided chip 24 in which the divided protective film 22A is laminated on the back surface is picked up using a die bonder BESTEM D02 manufactured by Canon Machinery Co., Ltd., and peeled off from the support 21 (see FIG. 7).
  • the chip size of the obtained chip 24 with protective film was 1 mm wide and 20 mm long.
  • Example 2 The chip
  • thermosetting protective film forming film Without performing the thermosetting process between the pasting process and the protective film dividing process, the chip separated after the picking process is left in an oven at 130 ° C. for 2 hours to cure the thermosetting protective film forming film. A chip with a protective film was produced in the same manner as in Example 1 except that.
  • Comparative Example 2 Without performing the groove forming step, the wafer was not singulated by backside grinding in the chip singulation step. Also, instead of performing the protective film dividing step, the wafer and the protective film are simultaneously cut so that the support is cut by 10 ⁇ m from the front surface side of the wafer with a dicing blade. I got a chip. In Comparative Example 2, a chip with a protective film was produced in the same manner as in Example 1 except for the above points.
  • the semiconductor wafer is separated into pieces by the prior dicing method, and the thermosetting protective film forming film is thermally cured before picking up, thereby reducing the warpage of the chip. I was able to suppress it. Further, by performing the thermosetting before dividing the protective film, it was possible to suppress the warpage of the chip more effectively. On the other hand, in Comparative Example 1, since the thermosetting protective film-forming film was thermoset after picking up, the warp of the chip could not be sufficiently suppressed. Further, in Comparative Example 2, since the wafer was separated into pieces after dicing without using the tip dicing method, the warp of the chip could not be sufficiently suppressed.

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
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CN112352476A (zh) * 2018-07-12 2021-02-09 迪睿合株式会社 拾取装置、安装装置、拾取方法、安装方法
WO2021039566A1 (ja) * 2019-08-26 2021-03-04 リンテック株式会社 積層体の製造方法
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JP2020129639A (ja) * 2019-02-12 2020-08-27 株式会社ディスコ デバイスパッケージ形成方法
WO2021039566A1 (ja) * 2019-08-26 2021-03-04 リンテック株式会社 積層体の製造方法
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