TWI683358B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI683358B
TWI683358B TW105111852A TW105111852A TWI683358B TW I683358 B TWI683358 B TW I683358B TW 105111852 A TW105111852 A TW 105111852A TW 105111852 A TW105111852 A TW 105111852A TW I683358 B TWI683358 B TW I683358B
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TW
Taiwan
Prior art keywords
protective film
film
forming
wafer
semiconductor wafer
Prior art date
Application number
TW105111852A
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English (en)
Chinese (zh)
Other versions
TW201642337A (zh
Inventor
佐伯尚哉
堀米克彦
米山裕之
荒井善男
Original Assignee
日商琳得科股份有限公司
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Publication date
Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW201642337A publication Critical patent/TW201642337A/zh
Application granted granted Critical
Publication of TWI683358B publication Critical patent/TWI683358B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
TW105111852A 2015-05-25 2016-04-15 半導體裝置之製造方法 TWI683358B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-105685 2015-05-25
JP2015105685 2015-05-25

Publications (2)

Publication Number Publication Date
TW201642337A TW201642337A (zh) 2016-12-01
TWI683358B true TWI683358B (zh) 2020-01-21

Family

ID=57393938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105111852A TWI683358B (zh) 2015-05-25 2016-04-15 半導體裝置之製造方法

Country Status (6)

Country Link
JP (1) JP6539919B2 (ko)
KR (1) KR102528047B1 (ko)
CN (1) CN107615453B (ko)
SG (1) SG11201709671YA (ko)
TW (1) TWI683358B (ko)
WO (1) WO2016189986A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775436B2 (ja) * 2017-02-02 2020-10-28 リンテック株式会社 フィルム状接着剤、半導体加工用シート及び半導体装置の製造方法
CN108091605B (zh) * 2017-12-06 2018-12-21 英特尔产品（成都）有限公司 一种降低晶圆误剥离的方法
CN111886673A (zh) * 2018-03-07 2020-11-03 琳得科株式会社 扩片方法、半导体装置的制造方法、以及粘合片
JP6821749B2 (ja) * 2018-07-12 2021-01-27 デクセリアルズ株式会社 ピックアップ装置、実装装置、ピックアップ方法、実装方法
CN109786310A (zh) * 2019-01-14 2019-05-21 东莞记忆存储科技有限公司 粘晶胶纸随晶粒分离的方法
JP2020129639A (ja) * 2019-02-12 2020-08-27 株式会社ディスコ デバイスパッケージ形成方法
JPWO2020195808A1 (ko) * 2019-03-26 2020-10-01
CN109967872B (zh) * 2019-04-23 2021-05-07 苏州福唐智能科技有限公司 一种半导体激光焊接方法及其焊接结构
CN114303234A (zh) * 2019-08-26 2022-04-08 琳得科株式会社 层叠体的制造方法
JP7301480B2 (ja) * 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP7370215B2 (ja) * 2019-10-25 2023-10-27 三菱電機株式会社 半導体装置の製造方法
CN112846534B (zh) * 2020-12-30 2023-03-21 武汉理工氢电科技有限公司 一种3ccm的切割方法
WO2022190916A1 (ja) * 2021-03-08 2022-09-15 リンテック株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030143818A1 (en) * 2002-01-31 2003-07-31 Barbara Vasquez Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
US20040113283A1 (en) * 2002-03-06 2004-06-17 Farnworth Warren M. Method for fabricating encapsulated semiconductor components by etching
TW200924047A (en) * 2007-10-09 2009-06-01 Hitachi Chemical Co Ltd Manufacturing method of semiconductor chip having adhesive film, adhesive film for semiconductor used for the manufacturing method and manufacturing method of semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144213A (ja) * 1999-11-16 2001-05-25 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
US6582983B1 (en) * 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP2005191508A (ja) * 2003-12-05 2005-07-14 Rohm Co Ltd 半導体装置およびその製造方法
JP2012079936A (ja) * 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
JP5865044B2 (ja) * 2011-12-07 2016-02-17 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP5976326B2 (ja) 2012-01-25 2016-08-23 日東電工株式会社 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム
JP5908543B2 (ja) * 2014-08-07 2016-04-26 日東電工株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030143818A1 (en) * 2002-01-31 2003-07-31 Barbara Vasquez Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
US20040113283A1 (en) * 2002-03-06 2004-06-17 Farnworth Warren M. Method for fabricating encapsulated semiconductor components by etching
TW200924047A (en) * 2007-10-09 2009-06-01 Hitachi Chemical Co Ltd Manufacturing method of semiconductor chip having adhesive film, adhesive film for semiconductor used for the manufacturing method and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPWO2016189986A1 (ja) 2018-03-15
KR102528047B1 (ko) 2023-05-02
JP6539919B2 (ja) 2019-07-10
CN107615453B (zh) 2020-09-01
TW201642337A (zh) 2016-12-01
KR20180010194A (ko) 2018-01-30
SG11201709671YA (en) 2017-12-28
CN107615453A (zh) 2018-01-19
WO2016189986A1 (ja) 2016-12-01

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