TWI683358B - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- TWI683358B TWI683358B TW105111852A TW105111852A TWI683358B TW I683358 B TWI683358 B TW I683358B TW 105111852 A TW105111852 A TW 105111852A TW 105111852 A TW105111852 A TW 105111852A TW I683358 B TWI683358 B TW I683358B
- Authority
- TW
- Taiwan
- Prior art keywords
- protective film
- film
- forming
- wafer
- semiconductor wafer
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
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Abstract
本發明之半導體裝置之製造方法具備:自半導體晶圓之正面側形成溝,或於半導體晶圓形成改質區域之前處理步驟、與將前述半導體晶圓自背面側研磨,沿著前述溝或改質區域將該半導體晶圓單片化成複數晶片之晶片單片化步驟、與在支持體上設置有熱硬化性保護膜形成用薄膜之附有支持體之保護膜形成用薄膜的熱硬化性保護膜形成用薄膜側貼附於經單片化之前述半導體晶圓的背面之貼附步驟、與將貼附於前述半導體晶圓上之前述熱硬化性保護膜形成用薄膜熱硬化,作成保護膜之熱硬化步驟、與前述熱硬化步驟之後,將在前述晶片上積層有前述保護膜之附有保護膜之晶片拾取之拾取步驟。 The manufacturing method of the semiconductor device of the present invention includes: forming a groove from the front side of the semiconductor wafer, or a processing step before forming a modified region on the semiconductor wafer, and polishing the semiconductor wafer from the back side, along the groove or the modified The wafer singulation step of singulation of the semiconductor wafer into a plurality of wafers, and the thermosetting protection of the thin film for forming a protective film with a support provided with a thin film for forming a thermosetting protective film on the support The step of attaching the film-forming film side to the back surface of the singulated semiconductor wafer, and thermosetting the film for forming the thermosetting protective film attached to the semiconductor wafer to form a protective film After the thermal curing step and the thermal curing step, a pick-up step of picking up a wafer with a protective film on which the protective film is deposited on the wafer is stacked.
Description
本發明為關於一種半導體裝置之製造方法,尤其是關於一種以先前切割法(Dicing Before Grinding;DBG)進行半導體晶圓之單片化,同時在半導體晶片背面形成保護膜之半導體裝置之製造方法。 The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device in which a semiconductor wafer is singulated by a dicing before grinding (DBG) method and a protective film is formed on the back surface of the semiconductor wafer.
以往,已熟知有在調整晶片厚度的背面研磨之前預先進行切割的先前切割法。先前切割法係例如先以切割自晶片正面形成切入溝,之後,研磨背面使其至少到達切入溝的底面,再以背面研磨同時進行厚度調整與對半導體晶圓之晶片的分割。 In the past, a prior dicing method in which dicing is performed in advance before back grinding to adjust the thickness of the wafer is well known. In the previous dicing method, for example, a cut-in groove was formed by cutting from the front surface of the wafer, and then the back surface was polished to at least reach the bottom surface of the cut-in groove, and then back-side polishing was performed to simultaneously adjust the thickness and divide the wafer of the semiconductor wafer.
以先前切割法分割的晶片係例如如專利文獻1之揭示所述,已知在晶片背面形成晶片固著用之接著劑層(晶片黏合)後再經安裝。 The wafer divided by the previous dicing method is, for example, as disclosed in Patent Document 1, and it is known to form an adhesive layer (wafer bonding) for wafer fixing on the back surface of the wafer and then mount it.
此時,具體來說,首先,在支持體上積層有接著薄膜所成之複合薄膜的接著薄膜側有貼附被分割成複數晶片之晶片。之後,藉由沿著被分割的晶片之晶片間隔,切斷接著薄膜,於各晶片背面形成接著薄膜所成之接著劑層。背 面有形成接著劑層的各晶片,藉由經拾取而自支持體上剝離,安裝至引線框架、基板等上,來製造半導體裝置。 At this time, specifically, first, a wafer divided into a plurality of wafers is attached on the adhesive film side of the composite film formed by bonding the adhesive film on the support. Then, by cutting the adhesive film along the wafer interval of the divided wafers, an adhesive layer formed by the adhesive film is formed on the back surface of each wafer. Back Each wafer on which the adhesive layer is formed is peeled off from the support after being picked up and mounted on a lead frame, a substrate, etc. to manufacture a semiconductor device.
[專利文獻1]日本特開2013-153071號公報 [Patent Document 1] Japanese Patent Application Publication No. 2013-153071
另外,近年來,有藉由被稱作倒裝方式的安裝法來進行半導體裝置之製造。此方法中,在安裝具有凸出等形成電極之回路面的半導體晶片時,半導體晶片之回路面側會與引線框架等之晶片搭載部接合。因此,沒有形成回路的半導體晶片之背面側會成為一露出構造,因此,在半導體晶片之背面上,為了要保護半導體晶片,有時要形成硬質之有機材料所構成之保護膜。 In addition, in recent years, semiconductor devices have been manufactured by a mounting method called a flip-chip method. In this method, when mounting a semiconductor wafer having a circuit surface forming electrodes such as protrusions, the circuit surface side of the semiconductor wafer is bonded to a wafer mounting portion such as a lead frame. Therefore, the back side of the semiconductor wafer that does not form a circuit becomes an exposed structure. Therefore, in order to protect the semiconductor wafer on the back side of the semiconductor wafer, a protective film made of a hard organic material may be formed.
於此,用來形成保護膜之薄膜有時會含有熱硬化性樹脂。然而,含有熱硬化性樹脂之薄膜有在熱硬化時產生收縮等,使晶片產生翹曲之虞。此晶片之翹曲在經單片化之晶片為細長形狀時,且在晶片正面經有機膜被膜時,特別容易發生。 Here, the thin film used to form the protective film sometimes contains thermosetting resin. However, the film containing thermosetting resin may shrink during thermal curing, which may cause warpage of the wafer. The warpage of this wafer is particularly likely to occur when the singulated wafer has an elongated shape, and when the front surface of the wafer is coated with an organic film.
本發明有鑑於以上之問題點,將提供一種即使在晶片背面以熱硬化來形成保護膜,半導體晶片也難以 產生翹曲之半導體裝置之製造方法作為本案之課題。 In view of the above problems, the present invention will provide a semiconductor wafer that is difficult to form even if a protective film is formed by thermal curing on the back surface of the wafer The manufacturing method of the warped semiconductor device is the subject of this case.
本發明者們進行縝密地探討之結果發現,將用來形成保護膜之熱硬化性保護膜形成用薄膜熱硬化之後,藉由實施拾取步驟,能夠解決上述課題,進而完成本發明。亦即,本發明為提供以下之(1)~(7)。 As a result of intensive studies, the inventors found that after thermosetting the thermosetting protective film forming film used to form the protective film, the above-mentioned problems can be solved by performing the pick-up step, and the present invention has been completed. That is, the present invention provides the following (1) to (7).
(1)一種半導體裝置之製造方法,其係具備:自半導體晶圓之正面側形成溝,或於半導體晶圓形成改質區域之前處理步驟、與將前述半導體晶圓自背面側進行研磨,沿著前述溝或改質區域將該半導體晶圓單片化成複數晶片之晶片單片化步驟、與將在支持體上設置有熱硬化性保護膜形成用薄膜之附有支持體之保護膜形成用薄膜的熱硬化性保護膜形成用薄膜側貼附於經單片化之前述半導體晶圓的背面之貼附步驟、與將貼附於前述半導體晶圓上之前述熱硬化性保護膜形成用薄膜熱硬化,作成保護膜之熱硬化步驟、與前述熱硬化步驟之後,將在前述晶片上積層有前述保護膜之附有保護膜之晶片拾取之拾取步驟。 (1) A method of manufacturing a semiconductor device, comprising: forming a groove from the front side of the semiconductor wafer, or a processing step before forming a modified region on the semiconductor wafer, and polishing the semiconductor wafer from the back side, along The wafer singulation step of singulation of the semiconductor wafer into a plurality of wafers with the aforementioned grooves or modified regions and the formation of a protective film with a support provided with a thermosetting protective film forming film on the support The step of attaching the film side for forming the thermosetting protective film of the thin film to the back surface of the singulated semiconductor wafer and the film for forming the thermosetting protective film to be attached to the semiconductor wafer After the thermal curing, the thermal curing step of forming the protective film and the thermal curing step, the picking up step of picking up the wafer with the protective film on which the protective film is deposited on the wafer.
(2)如上述(1)之半導體裝置之製造方法,其中,前述支持體具有基材,前述基材具有至少1層以上由選自聚酯系薄膜以及聚丙烯薄膜所成群中的1種構成之薄膜。 (2) The method for manufacturing a semiconductor device according to (1) above, wherein the support has a substrate, and the substrate has at least one layer selected from the group consisting of polyester films and polypropylene films Constituted film.
(3)如上述(1)或(2)之半導體裝置之製造方法,其中,進一步具備將貼附於前述半導體晶圓的背面之熱硬化性保護膜形成用薄膜或保護膜,沿著晶片間隔切斷,分割成因應各種晶片的形狀之保護膜分割步驟。 (3) The method for manufacturing a semiconductor device according to (1) or (2) above, further comprising a film or a protective film for forming a thermosetting protective film attached to the back surface of the semiconductor wafer, along the wafer gap The step of cutting and dividing into protective films in accordance with the shape of various wafers.
(4)如上述(3)之半導體裝置之製造方法,其中,將前述保護膜分割步驟在熱硬化步驟與前述拾取步驟之間進行。 (4) The method for manufacturing a semiconductor device according to (3) above, wherein the step of dividing the protective film is performed between the thermal curing step and the picking step.
(5)如上述(1)~(4)中任1項之半導體裝置之製造方法,其中,將前述附有支持體之保護膜形成用薄膜以環狀框架保持,並在該狀態下將前述熱硬化性保護膜形成用薄膜熱硬化,作成保護膜。 (5) The method for manufacturing a semiconductor device according to any one of (1) to (4) above, wherein the support-forming thin film for forming a protective film is held in a ring frame, and in this state, the foregoing The thin film for forming a thermosetting protective film is thermally cured to form a protective film.
(6)如上述(1)~(5)中任1項之半導體裝置之製造方法,其中,前述半導體晶圓係其正面被覆有有機膜。 (6) The method for manufacturing a semiconductor device according to any one of (1) to (5) above, wherein the front surface of the semiconductor wafer is covered with an organic film.
(7)如上述(1)~(6)中任1項之半導體裝置之製造方法,其中,前述晶片為細長形狀。 (7) The method of manufacturing a semiconductor device according to any one of (1) to (6) above, wherein the wafer has an elongated shape.
藉由以上本發明之製造方法,即使在晶片背面以熱硬化形成保護膜,也難以在半導體晶片上產生翹曲。 With the above manufacturing method of the present invention, even if the protective film is formed by thermal curing on the back surface of the wafer, it is difficult to warp the semiconductor wafer.
10‧‧‧半導體晶圓 10‧‧‧Semiconductor wafer
11‧‧‧溝 11‧‧‧Ditch
11A‧‧‧切口 11A‧‧‧Notch
12‧‧‧回路 12‧‧‧loop
13‧‧‧有機膜 13‧‧‧Organic film
15‧‧‧半導體晶片 15‧‧‧Semiconductor chip
16‧‧‧背面研磨膠帶 16‧‧‧Back grinding tape
17‧‧‧改質區域 17‧‧‧Modified area
20‧‧‧附有支持體之保護膜形成用薄膜 20‧‧‧ Thin film for forming protective film with support
21‧‧‧支持體 21‧‧‧Support
21A‧‧‧基材 21A‧‧‧Substrate
21B‧‧‧黏著劑層 21B‧‧‧Adhesive layer
22‧‧‧熱硬化性保護膜形成用薄膜 22‧‧‧ Thin film for forming thermosetting protective film
22A‧‧‧保護膜 22A‧‧‧Protection film
23‧‧‧環狀框架用黏著劑層 23‧‧‧Adhesive layer for ring frame
24‧‧‧附有保護膜之晶片 24‧‧‧ Wafer with protective film
25‧‧‧環狀框架 25‧‧‧ring frame
30‧‧‧烘箱 30‧‧‧Oven
[圖1]表示半導體裝置之製造方法中,於晶片正面形 成溝來進行之前處理步驟的模式剖面圖。 [FIG. 1] In the manufacturing method of a semiconductor device, the front surface of a wafer A schematic cross-sectional view of the previous processing steps being grooved.
[圖2]表示半導體裝置之製造方法中,在形成有溝之晶片正面貼附背面研磨膠帶之步驟的模式剖面圖。 [Fig. 2] A schematic cross-sectional view showing a step of attaching a back grinding tape to the front surface of a wafer formed with grooves in the method of manufacturing a semiconductor device.
[圖3]表示半導體裝置之製造方法中,將晶片之背面研磨,將半導體晶片單片化之步驟的模式剖面圖。 [FIG. 3] A schematic cross-sectional view showing a step of grinding a back surface of a wafer and singulating a semiconductor wafer in a method of manufacturing a semiconductor device.
[圖4]表示半導體裝置之製造方法中,將附有支持體之保護膜形成用薄膜貼附於經單片化之半導體晶圓以及環狀框架之步驟的模式剖面圖。 [Fig. 4] A schematic cross-sectional view showing a step of attaching a support-forming film for forming a protective film to a singulated semiconductor wafer and a ring-shaped frame in a method of manufacturing a semiconductor device.
[圖5]表示半導體裝置之製造方法中,將熱硬化性保護膜形成用薄膜熱硬化之步驟的模式剖面圖。 FIG. 5 is a schematic cross-sectional view showing a step of thermosetting a thin film for forming a thermosetting protective film in the method of manufacturing a semiconductor device.
[圖6]表示半導體裝置之製造方法中,將保護膜分割之步驟的模式剖面圖。 [Fig. 6] A schematic cross-sectional view showing a step of dividing a protective film in a method of manufacturing a semiconductor device.
[圖7]表示半導體裝置之製造方法中,拾取附有保護膜之晶片之步驟的模式剖面圖。 7 is a schematic cross-sectional view showing a step of picking up a wafer with a protective film in the method of manufacturing a semiconductor device.
[圖8]用來表示附有支持體之保護膜形成用薄膜之另一例的模式剖面圖。 [Fig. 8] A schematic cross-sectional view showing another example of a thin film for forming a protective film with a support.
[圖9]表示半導體裝置之製造方法中,於晶片形成改質區域來進行之前處理步驟的模式剖面圖。 [Fig. 9] A schematic cross-sectional view showing a method of manufacturing a semiconductor device in which a modified region is formed on a wafer to perform a previous processing step.
[圖10]表示測定晶片翹曲量之方法的模式圖。 [Fig. 10] A schematic diagram showing a method of measuring the amount of wafer warpage.
以下,針對本發明相關之半導體裝置之製造方法進行更詳細地說明。且,在以下之記載中,「重量平 均分子量(Mw)」是以管柱色層分析(GPC)法所測定之聚苯乙烯換算的值。且,例如「(甲基)丙烯酸酯」意指作為表示「丙烯酸酯」以及「甲基丙烯酸酯」兩者之用語來使用,關於其他類似用語也是相同的。 Hereinafter, the method of manufacturing the semiconductor device according to the present invention will be described in more detail. And, in the following description, "weight The "average molecular weight (Mw)" is a value converted from polystyrene measured by column chromatography (GPC). Also, for example, "(meth)acrylate" means used as a term indicating both "acrylate" and "methacrylate", and the same applies to other similar terms.
本發明之半導體裝置之製造方法具備以下(i)~(v)之步驟。 The method for manufacturing a semiconductor device of the present invention includes the following steps (i) to (v).
(i)自半導體晶圓之正面側形成溝,或於半導體晶圓形成改質區域之前處理步驟; (i) Forming grooves from the front side of the semiconductor wafer or processing steps before forming modified regions on the semiconductor wafer;
(ii)將前述半導體晶圓自背面側進行研磨,沿著前述溝或改質區域將該半導體晶圓單片化成複數晶片之晶片單片化步驟; (ii) a wafer singulation step of grinding the semiconductor wafer from the back side and singulating the semiconductor wafer into a plurality of chips along the groove or the modified region;
(iii)將在支持體上設置有熱硬化性保護膜形成用薄膜之附有支持體之保護膜形成用薄膜的熱硬化性保護膜形成用薄膜側貼附於經單片化之前述半導體晶圓的背面之貼附步驟; (iii) The thermosetting protective film forming film side of the support-attached protective film forming film provided with the thermosetting protective film forming film on the support is attached to the singulated semiconductor crystal Attaching steps on the back of the circle;
(iv)將貼附於前述半導體晶圓上之前述熱硬化性保護膜形成用薄膜熱硬化,作成保護膜之熱硬化步驟;以及 (iv) The step of thermosetting the thin film for forming a thermosetting protective film attached to the semiconductor wafer to form a protective film; and
(v)前述熱硬化步驟之後,將在前述晶片上積層有前述保護膜之附有保護膜之晶片拾取之拾取步驟 (v) After the thermal hardening step, the pick-up step of picking up the wafer with the protective film deposited on the wafer with the protective film
且,本發明之半導體裝置之製造方法進一步具備以下步驟(vi)較佳。 Furthermore, the method for manufacturing a semiconductor device of the present invention preferably further includes the following step (vi).
(vi)將貼附於前述半導體晶圓的背面之熱硬化性保護膜形成用薄膜或保護膜,沿著晶片間隔切斷,分割成因應各種晶片的形狀之保護膜分割步驟。 (vi) A thin film or protective film for forming a thermosetting protective film attached to the back surface of the semiconductor wafer, cut along the wafer interval, and divided into protective film division steps according to the shapes of various wafers.
以下,使用圖1~7針對本發明第1實施形態相關之半導體裝置之製造方法進行詳細地說明。圖1~7是將本發明第1實施形態相關之半導體裝置之製造方法以時間列所示之圖。且,第1實施形態中,在前處理步驟時形成溝。 Hereinafter, the method of manufacturing the semiconductor device according to the first embodiment of the present invention will be described in detail using FIGS. 1 to 7. 1 to 7 are diagrams showing in time series the method for manufacturing a semiconductor device according to the first embodiment of the present invention. Furthermore, in the first embodiment, grooves are formed during the pretreatment step.
首先,如圖1所示,進行自半導體晶圓10之正面側形成溝11之前處理步驟。本步驟所形成之溝11是厚度比晶片10的深度較淺的溝。溝11之形成能夠使用以往公知之晶片切割裝置等來進行。且,半導體晶圓10在後述之晶片單片化步驟中,沿著溝11被分割成複數半導體晶片。
First, as shown in FIG. 1, a process step before forming the
本實施形態所使用之半導體晶圓10亦可為矽晶片、或亦可為鎵.砷等晶片。半導體晶圓10之研磨前的厚度並無特別限定,但通常在500~1000μm左右。
The
半導體晶圓10之正面如圖1所示,以有機膜13被膜較佳。作為有機膜13,並無特別限定,有舉出聚亞醯胺、噁唑、矽氧,但此等中以聚亞醯胺較佳。半導體晶圓10藉由設置有機膜13,能夠保護其正面。且,半導體晶圓10設置有有機膜13時,較有容易產生翹曲之傾向,故要求較大的翹曲抑制效果。
As shown in FIG. 1, the front surface of the
半導體晶圓10在其正面有形成回路12。在晶片正面形成回路12能夠藉由包含刻蝕法、舉離法等以往廣用之
方法的各種方法來進行。
The
接著,將背面研磨膠帶16貼附於有形成溝11之晶片正面上。之後,進行研磨半導體晶圓10之背面,將半導體晶圓10單片化成複數個半導體晶片15之晶片單片化步驟。圖2有表示在形成有溝11之晶片正面貼附背面研磨膠帶16之狀態。
Next, the
於此,背面研磨膠帶16具備背面研磨膠帶用基材、與設置在此基材上之背面研磨膠帶用黏著劑層,且介隔著此黏著劑層貼附於半導體晶圓10較佳。此等之背面研磨膠帶用基材以及背面研磨膠帶用黏著劑層所使用之材料能夠自公知者進行適當地選擇,例如,背面研磨膠帶用黏著劑層是由能量線硬化型之黏著劑而成。藉由於半導體晶圓10正面貼附背面研磨膠帶16,半導體晶圓10會在1片背面研磨膠帶16上單片化成複數晶片15,故經單片化之晶片15不會有位置偏移等,能夠一體地來處理。且,研磨晶片10之背面時,能夠保護回路12。惟,對背面研磨膠帶16之晶片的貼附能夠省略。
Here, the
上述半導體晶圓之研磨是對半導體晶圓10之背面來進行使其至少達溝11之底部。藉由此研磨,如圖3所示,溝會成為貫通晶片的切口11A,半導體晶圓10會被切口11A分割,單片化成各個半導體晶片15。
The above-mentioned polishing of the semiconductor wafer is performed on the back surface of the
經單片化之半導體晶片15的形狀亦可為方形,亦可
為細長形狀,但以細長形狀較佳。本發明中,細長形狀之半導體晶片15其翹曲較容易產生,對翹曲之抑制效果的要求較大。
The shape of the
細長形狀中,晶片長度較晶片寬度大,相對於晶片寬度之晶片長度的比(長寬比)為2以上較佳,4以上更較佳,10以上再較佳。長寬比之上限並無特別限定,但通常在100以下左右,較佳為50以下。細長形狀之半導體晶片15為矩形較佳,並無特別限定。且,經個別化之晶片厚度並無特別限定,但通常為10~300μm左右,較佳為50~200μm。
In the elongated shape, the wafer length is larger than the wafer width, and the ratio of the wafer length to the wafer width (aspect ratio) is preferably 2 or more, 4 or more, and 10 or more. The upper limit of the aspect ratio is not particularly limited, but it is usually about 100 or less, preferably 50 or less. The
接著,如圖4所示,進行貼附步驟,其係將附有支持體之保護膜形成用薄膜20貼附於單片化成複數晶片15之半導體晶圓10的背面。
Next, as shown in FIG. 4, an attaching step is performed, in which a
如圖4所示,附有支持體之保護膜形成用薄膜20具備支持體21與設置於支持體21上之熱硬化性保護膜形成用薄膜22。支持體21只要是能夠支持熱硬化性保護膜形成用薄膜22之片狀者即可,並無特別限定,但如圖4所示,具備基材21A與設置於基材21A之一側的面之黏著劑層21B,且熱硬化性保護膜形成用薄膜22貼合於黏著劑層21B上較佳。且,附有支持體之保護膜形成用薄膜20的各構件之詳細如後述。
As shown in FIG. 4, the
如圖4所示,附有支持體之保護膜形成用薄
膜20係將熱硬化性保護膜形成用薄膜22側貼附於單片化成複數晶片15之半導體晶圓10的背面。且,附有支持體之保護膜形成用薄膜20係在包圍貼附於半導體晶圓10(半導體晶片15)之中央區域的外周區域有貼附環狀框架25較佳。藉此,附有支持體之保護膜形成用薄膜20、以及貼附在其上方的複數半導體晶片15會藉由環狀框架25而一體地被支持。
As shown in Fig. 4, the thin film for forming a protective film with a support
The
之後,複數晶片15有貼附背面研磨膠帶16時,背面研磨膠帶16會自複數晶片15(半導體晶圓10)而剝離。且,背面研磨膠帶16之背面研磨膠帶用黏著劑層是由能量線硬化型黏著劑而形成時,在剝離背面研磨膠帶16之前,對背面研磨膠帶用黏著劑層照射能量線並使其硬化較佳。且,作為能量線,通常有使用紫外線、電子束等。
Thereafter, when the
於此,在其面方向上,如圖4,支持體21比熱硬化性保護膜形成用薄膜22大一圈較佳。支持體21藉由大一圈,在其中央區域上配置熱硬化性保護膜形成用薄膜22的同時,包圍中央區域之外周區域會成為沒有設置熱硬化性保護膜形成用薄膜22之區域,能夠容易使外周區域貼附於環狀框架25上。且,支持體21會介隔著黏著劑層21B而貼附於環狀框架25上較佳。
Here, in the plane direction, as shown in FIG. 4, the
惟,如圖8所示,附有支持體之保護膜形成用薄膜20亦可在熱硬化性保護膜形成用薄膜22上設置環狀框架用黏著劑層23。此時,熱硬化性保護膜形成用薄膜22比半導體晶圓10大一圈,且其中央區域會成為貼附
有半導體晶圓10之區域,同時包圍其中央之外周區域有設置圓環狀之環狀框架用黏著劑層23。此時,附有支持體之保護膜形成用薄膜20會介隔著環狀框架用黏著劑層23而貼附於環狀框架25。
However, as shown in FIG. 8, the
環狀框架用黏著劑層23係由例如丙烯酸系黏著劑、橡膠系黏著劑、矽氧系黏著劑、氨基甲酸乙酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等之黏著劑所形成。
The
上述之貼附步驟之後,進行熱硬化步驟,其係將熱硬化性保護膜形成用薄膜22熱硬化作成保護膜22A。
After the above-mentioned attaching step, a thermosetting step is performed, which is to thermally harden the
熱硬化步驟例如在烘箱30內進行。亦即,如圖5所示,將貼附有複數半導體晶片15之附有支持體之保護膜形成用薄膜20以貼附在環狀框架25上之狀態般送至烘箱30內部較佳,在烘箱30內部加熱並熱硬化。烘箱30中的加熱只要是在能夠硬化熱硬化性保護膜形成用薄膜22的溫度與加熱時間下來進行即可,作為溫度,較佳為70~175℃,更較佳為80~150℃,作為加熱時間,較佳為30~180分鐘,更較佳為60~120分鐘。
The heat hardening step is performed in the oven 30, for example. That is, as shown in FIG. 5, it is preferable that the
之後,如圖6所示,進行保護膜分割步驟,其係將貼附於經單片化之半導體晶圓10背面的保護膜22A沿著晶片間隔切斷,分割成因應各晶片之形狀。
Thereafter, as shown in FIG. 6, a protective film division step is performed, which is to cut the
半導體晶圓10會藉由切口11A而被單片化成晶片15,且沿著各個晶片15間之切口11A將保護膜22A切斷。保護膜22A之切斷是以雷射照射、切割刀刃、支持體21之擴展等來進行,但以雷射照射來進行較佳。以雷射照射來進行時,自雷射光源26所發出的雷射光會自半導體晶片15之正面側通過切口11A照射至保護膜22A。藉此,經分割之保護膜22A的形狀容易對應至半導體晶片15的形狀。
The
保護膜22A之切斷不需要進行到使保護膜22A完全被切斷,亦可部分性地切斷,使保護膜22A能夠在後述拾取步驟等時分離,如此之型態也包含在本發明之保護膜分割步驟的一型態中。且,為了去除保護膜22A切斷時所產生的碎屑等,在切斷保護膜22A之後,亦可將支持體21上之複數晶片15以旋轉器等洗淨。
The cutting of the
上述熱硬化步驟以及保護膜分割步驟之後,如圖7所示,拾取在各半導體晶片15上積層保護膜22A而成的附有保護膜之晶片24,再自支持體21上剝離。為了使支持體21容易拾取,在拾取之前,亦可擴展至面方向。自支持體21上剝離的附有保護膜之晶片24可藉由例如稱作倒裝方式之方式,使晶片上的回路面與引線框架等之晶片搭載部接合,得到半導體裝置。
After the thermal curing step and the protective film dividing step, as shown in FIG. 7, the
接著,針對本發明第2實施形態相關之半導體裝置之製造方法進行詳細地說明。第1實施形態中,在前處理步驟時,是藉由切割設置溝並進行單片化,但在第2實施形態中,是形成改質區域來取代溝。以下,針對第2實施形態,說明與第1實施形態的差異點。且,以下省略說明的構成以及步驟與第1實施形態相同。 Next, a method of manufacturing a semiconductor device according to the second embodiment of the present invention will be described in detail. In the first embodiment, in the pretreatment step, the groove is cut and provided to be singulated, but in the second embodiment, the modified region is formed instead of the groove. Hereinafter, with respect to the second embodiment, differences from the first embodiment will be described. In addition, the configuration and steps of which the description is omitted are the same as in the first embodiment.
本實施形態中,如圖9所示,首先,進行前處理步驟,其係在半導體晶圓10形成改質區域17。改質區域17在半導體晶圓10中是經過脆質化的部分,藉由研磨步驟中的研磨,半導體晶圓10會變薄,藉由加上研磨所施的力,半導體晶圓10會被破壞,成為半導體晶片經單片化的起點之區域。改質區域17之形成能夠藉由焦點聚集在半導體晶圓10之內部的雷射照射來進行。雷射照射亦可自半導體晶圓10之正面側來進行,也可自背面側來進行。
In this embodiment, as shown in FIG. 9, first, a pre-processing step is performed, which forms a modified
且,半導體晶圓10之正面與第1實施形態相同,經有機膜13被膜較佳。且,半導體晶圓10與第1實施形態相同,在其正面有形成回路12。
In addition, the front surface of the
且,表示以下說明之前處理以外的各步驟之圖示與第1實施形態相同,故省略,但沒有形成如圖3~6所示之切口11A。
In addition, the illustrations showing the steps other than the processing before the description below are the same as those in the first embodiment, so they are omitted, but the
接著,於形成改質區域17之晶片正面上貼附背面研磨膠帶16。惟,本實施形態中,亦可省略背面研
磨膠帶16之貼附。之後,研磨半導體晶圓10之背面,沿著改質區域17使其單片化成複數晶片。
Next, a
於此,藉由研磨,研磨面(晶片背面)到達改質區域17即可,亦可不用縝密地到達改質區域17,具體來說,將改質區域17設為起點,研磨至接近改質區域17的位置,使其成為半導體晶圓10被破壞且被單片化成半導體晶片15之程度。
Here, by polishing, the polished surface (wafer back surface) only needs to reach the modified
之後,與第1實施形態相同,進行貼附步驟以及熱硬化步驟,進一步進行保護膜分割步驟以及拾取步驟。惟,本實施形態中,保護膜分割步驟藉由擴展支持體21來分割保護膜較佳。此時,配合保護膜22A之性狀,亦可一邊進行保護膜22A之加熱或冷卻,一邊進行支持體21之擴展。
Thereafter, as in the first embodiment, the attaching step and the thermosetting step are performed, and the protective film dividing step and the picking step are further performed. However, in this embodiment, it is preferable that the protective film division step divides the protective film by expanding the
且,以上第1以及第2實施形態中,保護膜分割步驟是在熱硬化步驟與拾取步驟之間來進行,保護膜分割步驟亦可在貼附步驟與熱硬化步驟之間進行。在貼附步驟與熱硬化步驟之間進行保護膜分割步驟時,則在保護膜分割步驟中,是切斷熱硬化前之熱硬化性保護膜形成用薄膜22後再分割。其他步驟與上述相同,故省略說明。
In addition, in the above first and second embodiments, the protective film dividing step is performed between the thermal curing step and the picking step, and the protective film dividing step may also be performed between the attaching step and the thermal curing step. When the protective film dividing step is performed between the attaching step and the thermosetting step, in the protective film dividing step, the thermosetting protective
且,亦可對熱硬化性保護膜形成用薄膜22或保護膜22A進行雷射標記。雷射標記是照射雷射光,並藉由削取熱硬化性保護膜形成用薄膜22或保護膜22A之正面來標記的方法。雷射標記亦可在將熱硬化性保護膜形成用薄膜22貼附於半導體晶片15後進行,在熱硬化步驟後
進行較佳,在熱硬化步驟與拾取步驟之間進行更較佳。
Furthermore, the
且,雷射標記通常是將雷射光自支持體21側介隔著支持體21照射在保護膜22A或保護膜形成用薄膜22之正面來進照射行。
In addition, the laser mark is usually irradiated by irradiating the laser light from the
以上之半導體裝置之製造方法中,為了在熱硬化步驟之後進行拾取步驟,熱硬化性保護膜形成用薄膜22以被支持體21所支持之狀態來被熱硬化處理。因此,熱硬化性保護膜形成用薄膜22幾乎不會因為加熱硬化而收縮進而成為硬化物,故半導體晶片15也較難以產生翹曲。進而,本發明中,藉由採用先前切割法,在背面研磨時,在晶片變薄的時點將晶片分割,故容易防止對晶片之翹曲,藉此,也容易防止各個半導體晶片之翹曲。且,假設在背面研磨時在晶片10上產生翹曲,各半導體晶片15也會隨著熱硬化步驟中被熱硬化的熱硬化性保護膜形成用薄膜22,能夠使平面性被提高,且翹曲量減少。
In the above method of manufacturing a semiconductor device, in order to perform the pick-up step after the thermosetting step, the
且,本製造方法中,將熱硬化步驟以在附有支持體之保護膜形成用薄膜20上貼附複數半導體晶片15之狀態來進行,故支持體會因熱而變形,會有產生鬆弛等不良情況發生之虞。於此,構成支持體之基材具有耐熱性較佳。作為具有耐熱性之基材,具體來說,如後述,有舉出至少具有聚酯系薄膜或聚丙烯薄膜者。
In addition, in this manufacturing method, the thermal curing step is performed in a state where a plurality of
進而,本製造方法中,藉由在熱硬化步驟之後進行保護膜切斷步驟,熱硬化性保護膜形成用薄膜22在熱硬化時不會被分割。因此,熱硬化步驟中,能將各個晶片15
一起保持在熱硬化性保護膜形成用薄膜22上,故能夠防止各個晶片欲單獨翹曲之動作,且能夠有效地抑制翹曲。
Furthermore, in the present manufacturing method, by performing the protective film cutting step after the thermosetting step, the
且,本發明中,若在熱硬化時將支持體21貼附於環狀框架25,則半導體晶片15以及支持體21會一體地被環狀框架25所支持,故可更有效地防止上述晶片之翹曲。
Moreover, in the present invention, if the
且,若在半導體晶圓10之正面設置有機膜13,則半導體晶圓10以及半導體晶片15會因有機膜13之熱收縮而容易翹曲,但藉由採用如上述之先前切割法,且在熱硬化步驟之後進行拾取步驟,能夠有效地防止因有機膜13所產生的翹曲。同樣地,雖細長形狀之半導體晶片15也容易產生翹曲,但藉由採用先前切割法,且在熱硬化步驟之後進行拾取步驟,亦可有效地防止其翹曲。
Moreover, if the
進而,熱硬化性保護膜形成用薄膜22會受硬化而成為保護膜22A,故喪失附著性。因此,藉由在熱硬化步驟之後進行保護膜切斷步驟,因切斷保護膜22A而產生的碎屑會較難附著於晶片上。
Furthermore, the
以下,說明上述半導體裝置之製造方法所使用的附有支持體之保護膜形成用薄膜的各個構件之構成以及其製作方法。 Hereinafter, the configuration of each member of the thin film for forming a protective film with a support used in the manufacturing method of the semiconductor device and the manufacturing method thereof will be described.
附有支持體之保護膜形成用薄膜20中所使用的支持體21之基材21A只要是適用於半導體晶圓10之加工,皆無限定,通常是由將樹脂系之材料作為主要材料之樹脂薄膜所構成。
The
作為樹脂薄膜的具體例,有舉出低密度聚乙烯(LDPE)薄膜、直鏈低密度聚乙烯(LLDPE)薄膜、高密度聚乙烯(HDPE)薄膜等之聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、乙烯-降莰烯共聚合物薄膜、降莰烯樹脂薄膜等之聚烯烴系薄膜;乙烯-乙烯乙酸酯共聚合物薄膜、乙烯-(甲基)丙烯酸共聚合物薄膜、乙烯-(甲基)丙烯酸酯共聚合物薄膜等之乙烯系共聚合薄膜;聚氯乙烯薄膜、氯乙烯共聚合物薄膜等之聚氯乙烯系薄膜;聚乙烯對苯二甲酸酯薄膜、聚丁烯對苯二甲酸酯薄膜等之聚酯系薄膜;聚氨基甲酸乙酯薄膜;聚亞醯胺薄膜;聚苯乙烯薄膜;聚碳酸酯薄膜;氟樹脂薄膜等。且亦可使用如此等之交聯薄膜、離子聚合物薄膜之改質薄膜。基材亦可為此等之1種而成的薄膜,亦可為進而組合2種類以上之此等的積層薄膜。 Specific examples of the resin film include polyethylene films such as low density polyethylene (LDPE) films, linear low density polyethylene (LLDPE) films, and high density polyethylene (HDPE) films, polypropylene films, and polybutylene. Polyolefin films such as vinylene films, polybutadiene films, polymethylpentene films, ethylene-norbornene copolymer films, norbornene resin films; ethylene-ethylene acetate copolymer films, ethylene -(Meth)acrylic copolymer film, ethylene-(meth)acrylate copolymer film and other vinyl-based copolymer films; polyvinyl chloride film, vinyl chloride copolymer film and other polyvinyl chloride-based films; Polyester films such as polyethylene terephthalate film, polybutylene terephthalate film, etc.; polyurethane film; polyimide film; polystyrene film; polycarbonate film; Fluorine resin film, etc. And modified films such as such crosslinked films and ionomer films can also be used. The base material may be a film made of one of these, or a laminated film in which two or more types of these are combined.
樹脂薄膜,以廣用性之觀點、以及強度較高且容易防止翹曲之觀點、或在上述貼附步驟中防止晶片移動之觀點、耐熱性之觀點來看,以聚乙烯對苯二甲酸酯薄膜、聚丁烯對苯二甲酸酯等之聚酯系薄膜、聚丙烯薄膜較佳。為了得到如此之效果,基材只要具有1層以上選自聚酯系薄膜以及聚丙烯薄膜所成群即可,亦可為單層薄膜,亦可為 積層薄膜。為了能夠容易地進行拾取步驟中的擴展,且以在拾取本身當中,保護膜等容易自支持體剝離之觀點來看,基材具有聚丙烯薄膜特別佳。作為組合聚丙烯薄膜與其他種類之薄膜的積層薄膜,亦可使用例如國際公開公報WO2013/172328號所記載之基材。 From the viewpoint of versatility, the viewpoint of high strength and easy prevention of warpage, or the viewpoint of preventing wafer movement in the above-mentioned attaching step, and the viewpoint of heat resistance, the resin film is made of polyethylene terephthalate Polyester films such as ester films, polybutylene terephthalate, and polypropylene films are preferred. In order to obtain such an effect, the base material only needs to have at least one layer selected from the group consisting of a polyester film and a polypropylene film, or a single-layer film or Laminated film. In order to enable easy expansion in the pickup step, and from the viewpoint of easy peeling of the protective film or the like from the support in the pickup itself, it is particularly preferable that the base material has a polypropylene film. As a laminated film combining a polypropylene film and other types of films, for example, the base material described in International Publication No. WO2013/172328 can also be used.
基材21之厚度並無特別限定,但較佳為20~450μm,更較佳為25~400μm之範圍。
The thickness of the
附有支持體之保護膜形成用薄膜20中所使用的支持體21之黏著劑層21B能夠使用丙烯酸系黏著劑、橡膠系黏著劑、矽氧系黏著劑、氨基甲酸乙酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等,但此等中,以丙烯酸系黏著劑較佳。
The
丙烯酸系黏著劑是含有丙烯酸系共聚合物(a1)作為主成分(黏著主劑),丙烯酸系共聚合物(a1)含有例如含有官能基之單體所衍生之構成單位、與含有官能基之單體以外之(甲基)丙烯酸酯單體或其衍生物所衍生之構成單位。 The acrylic adhesive contains an acrylic copolymer (a1) as a main component (adhesive main agent), and the acrylic copolymer (a1) contains, for example, a structural unit derived from a monomer containing a functional group and a functional group. Constituent units derived from (meth)acrylate monomers or derivatives other than monomers.
作為丙烯酸系共聚合物(a1)之構成單位的含有官能基之單體是在分子內具有聚合性雙鍵、與羥基、胺基、取代胺基、環氧基等之官能基的單體較佳。 The functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) is a monomer having a polymerizable double bond in the molecule, and a functional group such as a hydroxyl group, an amine group, a substituted amine group, and an epoxy group. good.
作為上述含有官能基之單體之具體例,有舉出2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、3-羥 丙基(甲基)丙烯酸酯、4-羥丁基(甲基)丙烯酸酯等,此等可單獨使用或組合2種以上來使用。 Specific examples of the functional group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 3-hydroxy Propyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate and the like can be used alone or in combination of two or more.
作為構成丙烯酸系共聚合物(a1)之(甲基)丙烯酸酯單體,可使用烷基之碳數為1~20之烷基(甲基)丙烯酸酯、環烷基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯。此等之中,特別佳為烷基之碳數為1~18之烷基(甲基)丙烯酸酯,例如甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丙基(甲基)丙烯酸酯、n-丁基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯等。 As the (meth)acrylate monomer constituting the acrylic copolymer (a1), an alkyl (meth)acrylate having 1 to 20 carbon atoms and a cycloalkyl (meth)acrylate can be used , Benzyl (meth) acrylate. Among these, particularly preferred are alkyl (meth)acrylates having 1 to 18 carbon atoms, such as methyl (meth)acrylate, ethyl (meth)acrylate, and propyl (meth) Group) acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.
丙烯酸系共聚合物(a1)通常以3~50質量%,較佳以5~35質量%之比例含有上述含有官能基之單體所衍生之構成單位,且通常以40~97質量%,較佳以60~95質量%之比例含有(甲基)丙烯酸酯單體或其衍生物所衍生之構成單位。 The acrylic copolymer (a1) usually contains 3 to 50% by mass, preferably 5 to 35% by mass, of structural units derived from the above functional group-containing monomer, and usually 40 to 97% by mass. It is preferable to contain constituent units derived from (meth)acrylate monomers or their derivatives at a ratio of 60 to 95% by mass.
丙烯酸系共聚合物(a1)中除了上述含有官能基之單體以及來自(甲基)丙烯酸酯單體或其衍生物的構成單位以外,亦可具有二甲基丙烯醯胺、甲酸乙烯酯、乙烯乙酸酯、苯乙烯等來自其他單體的構成單位。 In the acrylic copolymer (a1), in addition to the above-mentioned functional group-containing monomer and the structural unit derived from the (meth)acrylate monomer or its derivative, it may also have dimethylacrylamide, vinyl formate, Constituent units derived from other monomers such as ethylene acetate and styrene.
且,黏著劑層亦可為將紫外線硬化型或電子束硬化型等之能量線硬化型黏著劑硬化之材料。作為能量線硬化型黏著劑,有舉出將分子中具有自由基反應性碳-碳雙鍵之丙烯酸系共聚合物等作為主成分(黏著主劑)來使用之所謂的內在型能量線硬化型黏著劑。內在型能量線硬化型黏著劑之主劑能夠藉由例如使上述丙烯酸系共聚合 物(a1)與含有不飽和基之化合物反應所得,該含有不飽和基之化合物具有鍵結於丙烯酸系共聚合物(a1)之官能基的取代基、與自由基反應性碳-碳雙鍵。 In addition, the adhesive layer may be a material that hardens energy ray hardening type adhesives such as ultraviolet curing type or electron beam curing type. As the energy ray hardening type adhesive, there is a so-called internal energy ray hardening type which uses an acrylic copolymer having a radical-reactive carbon-carbon double bond in the molecule as a main component (adhesive main agent). Adhesive. The main component of the internal energy ray hardening adhesive can be copolymerized by, for example, the above acrylic The compound (a1) is obtained by reacting with a compound containing an unsaturated group, the compound containing an unsaturated group has a substituent bonded to the functional group of the acrylic copolymer (a1), and a radical-reactive carbon-carbon double bond .
且,能量線硬化型黏著劑亦可為將不具有上述丙烯酸系共聚合物(a1)等之能量線硬化性的聚合物成分、與能量線硬化性之多官能單體以及/或寡聚物之混合物作為主成分之所謂的添加型能量線硬化型黏著劑。作為能量線硬化性之多官能單體以及/或寡聚物,能夠使用例如多元醇與(甲基)丙烯酸之酯等。 In addition, the energy ray-curable adhesive may be a polymer component that does not have the energy ray-curability of the acrylic copolymer (a1) or the like, and a multifunctional monomer and/or oligomer with energy ray-curability The mixture is the main component of the so-called additive energy ray hardening adhesive. As the energy ray-curable polyfunctional monomer and/or oligomer, for example, an ester of polyhydric alcohol and (meth)acrylic acid can be used.
且,黏著劑除了丙烯酸系共聚合物等之黏著主劑之外,進一步因應必要,亦可摻混交聯劑、光聚合起始劑等。作為交聯劑,能夠使用具有與丙烯酸系共聚合物等之聚合物(黏著主劑)中所含有的官能基之反應性的多官能性化合物。作為如此之多官能性化合物之例,能夠舉出異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、氮丙啶化合物、聯氨化合物、醛化合物、噁唑林化合物、金屬烷氧化合物、金屬螯合化合物、金屬鹽、銨鹽、反應性酚樹脂等。 In addition, the adhesive agent can be blended with a crosslinking agent, a photopolymerization initiator, etc. in addition to the adhesive main agent such as acrylic copolymer, etc., as necessary. As the crosslinking agent, a multifunctional compound having reactivity with a functional group contained in a polymer (adhesive main agent) such as an acrylic copolymer can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxy compounds, and metal chelates. Compounds, metal salts, ammonium salts, reactive phenol resins, etc.
黏著劑層21B之厚度並無特別限定,但以1~50μm左右較佳,以2~30μm更較佳。
The thickness of the
惟,支持體21有貼附熱硬化性保護膜形成用薄膜22,只要是能夠支持此薄膜22的話,不限定於上述構成,例如亦可省略黏著劑層。此時,為了調整熱硬化性保護膜形成用薄膜22與支持體21之間的剝離性,例如支持
體21亦可具有矽氧剝離劑等所形成之層。
However, the
熱硬化性保護膜形成用薄膜22由未硬化之熱硬化性接著劑而成較佳。熱硬化性保護膜形成用薄膜22藉由貼附於半導體晶圓10(半導體晶片15)之後使其熱硬化,能夠強固地將保護膜22A接著於半導體晶圓10,在晶片15上形成耐久性優異之保護膜22A。
The
熱硬化性保護膜形成用薄膜22在常溫下具有黏著性,或藉由加熱發揮黏著性較佳。藉此,容易貼附於半導體晶圓10(半導體晶片15)上。上述熱硬化性接著劑含有熱硬化性成分與黏合劑聚合物成分較佳。
The
作為熱硬化性成分,有舉例如環氧樹脂、酚樹脂、三聚氰胺樹脂、尿素樹脂、聚酯樹脂、氨基甲酸乙酯樹脂、丙烯酸系樹脂、聚亞醯胺樹脂、苯並噁嗪樹脂等以及此等之混合物。此等之中,使用環氧樹脂、酚樹脂以及使用此等之混合物較佳。 Examples of the thermosetting component include epoxy resin, phenol resin, melamine resin, urea resin, polyester resin, urethane resin, acrylic resin, polyimide resin, benzoxazine resin, etc. Wait for the mixture. Among these, the use of epoxy resins, phenol resins, and mixtures of these are preferred.
環氧樹脂在受到加熱後,會進行三維網狀化,並具有形成強固的被膜之性質。作為如此之環氧樹脂,有使用以往公知的各種環氧樹脂,通常為分子量300~2000左右者較佳,尤其是分子量300~500者較佳。進而,以混練分子量330~400之常態下為液狀的環氧樹脂與分子量400~2500,尤其是500~2000之常溫下為固體的環氧樹脂之形式來使用較佳。且,環氧樹脂之環氧當量為 50~5000g/eq較佳。 After being heated, the epoxy resin undergoes three-dimensional meshing and has the property of forming a strong coating. As such an epoxy resin, various conventionally known epoxy resins are used, and those having a molecular weight of approximately 300 to 2000 are generally preferred, and those having a molecular weight of 300 to 500 are particularly preferred. Furthermore, it is preferably used in the form of mixing an epoxy resin that is liquid in the normal state with a molecular weight of 330 to 400 and an epoxy resin that is solid at a normal temperature with a molecular weight of 400 to 2500, especially 500 to 2000. Moreover, the epoxy equivalent of epoxy resin is 50~5000g/eq is better.
作為如此之環氧樹脂,具體來說能夠舉出雙酚A、雙酚F、間苯二酚、苯基酚醛樹脂、甲酚酚醛清漆等酚類之縮水甘油醚;丁二醇、聚乙烯二醇、聚丙二醇等之醇類的縮水甘油醚;苯二甲酸、異苯二甲酸、四氫酞酸等羧酸之縮水甘油醚;將鍵結於苯胺異氰酸等之氮原子的活性氫以環氧丙基取代之縮水甘油型或烷基縮水甘油型之環氧樹脂;如乙烯基環己烷二環氧化物、3,4-環氧基環己基甲基-3,4-二環己烷羧酸、2-(3,4-環氧基)環己基-5,5-螺旋(3,4-環氧基)環己烯-m-二氧雜環等之將分子內之碳-碳雙鍵藉由例如氧化來導入環氧基之所謂的脂環型環氧化物。另外,能夠使用具有聯苯骨架、二環己二烯骨架、萘骨架等之環氧樹脂、二環戊二烯型之環氧樹脂等。 Specific examples of such epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; butanediol and polyethylene di Glycidyl ethers of alcohols such as alcohol and polypropylene glycol; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; active hydrogen bonded to nitrogen atoms such as aniline isocyanic acid Epoxypropyl substituted glycidyl or alkyl glycidyl epoxy resin; such as vinylcyclohexane diepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexyl Alkanecarboxylic acid, 2-(3,4-epoxy)cyclohexyl-5,5-helix (3,4-epoxy)cyclohexene-m-dioxane, etc. The carbon double bond is a so-called alicyclic epoxy compound in which an epoxy group is introduced by, for example, oxidation. In addition, an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, etc., a dicyclopentadiene type epoxy resin, etc. can be used.
此等之中,使用雙酚系縮水甘油型環氧樹脂、o-甲酚酚醛清漆型環氧樹脂以及苯酚酚醛型環氧樹脂較佳用。 Among these, bisphenol-based glycidyl epoxy resin, o-cresol novolac epoxy resin, and phenol novolac epoxy resin are preferably used.
此等環氧樹脂能夠單獨使用1種、或組合2種以上來使用。 These epoxy resins can be used alone or in combination of two or more.
作為熱硬化性成分使用環氧樹脂時,作為助劑,併用熱活性型潛在性環氧樹脂硬化劑較佳。熱活性型潛在性環氧樹脂硬化劑意指在室溫下不與環氧樹脂反應,藉由某溫度以上之加熱而活性化,與環氧樹脂反應之型態的硬化劑。熱活性型潛在性環氧樹脂硬化劑之活性化方法中,有存在以加熱之化學反應生成活性種(陰離子、陽離子)之方法;在室溫左右之下安定地分散於環氧樹脂中且 在高溫下與環氧樹脂相溶.溶解,並開始硬化反應之方法;以分子篩封止型之硬化劑在高溫下溶出並開始硬化反應之方法;微粒膠囊之方法等。 When an epoxy resin is used as a thermosetting component, it is preferable to use a thermoactive latent epoxy resin hardener as an auxiliary agent. Thermally active latent epoxy resin hardener means a type of hardener that does not react with epoxy resin at room temperature, is activated by heating above a certain temperature, and reacts with epoxy resin. Among the activation methods of the heat-active latent epoxy resin hardener, there is a method of generating active species (anions, cations) by a chemical reaction of heating; it is stably dispersed in the epoxy resin at about room temperature and Compatible with epoxy resin at high temperature. The method of dissolving and starting the hardening reaction; the method of dissolving the hardener with molecular sieve seal at high temperature and starting the hardening reaction; the method of microcapsules, etc.
作為熱活性型潛在性環氧樹脂硬化劑之具體例,能夠舉出各種鎓鹽或、二元酸二醯肼化合物、二氰二胺、胺加合物硬化劑、咪唑化合物等之高融點活性氫化合物等。此等熱活性型潛在性環氧樹脂硬化劑能夠單獨使用1種,或組合2種以上來使用。如上述之熱活性型潛在性環氧樹脂硬化劑以相對於環氧樹脂100重量份,較佳為0.1~20重量份,特別佳為0.2~10重量份,再較佳為0.3~5重量份之比例來使用。 As specific examples of the heat-active latent epoxy resin hardener, various high-melting points such as various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct hardeners, imidazole compounds, etc. can be mentioned. Active hydrogen compounds, etc. These thermally active latent epoxy resin hardeners can be used alone or in combination of two or more. The heat-active latent epoxy resin hardener as described above is preferably 0.1 to 20 parts by weight, preferably 0.2 to 10 parts by weight, and more preferably 0.3 to 5 parts by weight relative to 100 parts by weight of the epoxy resin. To use.
作為酚系樹脂,有使用烷基酚、多元酚、萘酚等之酚類與醛類之縮合物等,並無特別限制。具體來說,有使用苯酚酚醛樹脂、o-甲酚酚醛清漆樹脂、p-甲酚酚醛清漆樹脂、t-丁基苯酚酚醛樹脂、二環戊二烯甲酚樹脂、聚對乙烯酚樹脂、雙酚A型酚醛樹脂、或此等之改質物等。 As the phenol-based resin, there are used condensates of phenols and aldehydes such as alkylphenols, polyhydric phenols, naphthols, and the like, and is not particularly limited. Specifically, there are phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, poly-p-vinyl phenol resin, bisphenol Phenolic A type phenolic resin, or these modified products, etc.
此等之酚系樹脂中所包含的苯酚性羥基會因加熱而容易與上述環氧樹脂之環氧基進行加成反應,能夠形成耐衝撃性較高的硬化物。因此,亦可併用環氧樹脂與酚系樹脂。 The phenolic hydroxyl group contained in these phenol resins will easily undergo an addition reaction with the epoxy group of the epoxy resin by heating, and can form a hardened product with high impact resistance. Therefore, epoxy resin and phenol resin can also be used together.
黏合劑聚合物成分能夠對熱硬化性保護膜形成用薄膜22賦予適度的附著,並提升附有支持體之保護膜形成用薄膜20之操作性。黏合劑聚合物之重量平均分
子量通常為5萬~200萬,較佳為10萬~150萬,特別佳為20萬~100萬之範圍。若分子量過低,則熱硬化性保護膜形成用薄膜22之薄膜形成會變得不充分,若過高,則與其他成分之相溶性會變得較差,結果,會妨礙均一之薄膜形成。作為如此之黏合劑聚合物,有使用例如丙烯酸系聚合物、聚酯樹脂、苯氧樹脂、氨基甲酸乙酯樹脂、矽氧樹脂、橡膠系聚合物等,使用丙烯酸系聚合物特別佳。
The binder polymer component can impart moderate adhesion to the thermosetting protective
作為丙烯酸系聚合物,有舉例如由(甲基)丙烯酸衍生物所衍生之構成單位而成之(甲基)丙烯酸酯共聚合物。於此,作為(甲基)丙烯酸衍生物,除了(甲基)丙烯酸其本身之外,也有舉出(甲基)丙烯酸酯單體。且,(甲基)丙烯酸酯共聚合物包含來自(甲基)丙烯酸酯單體之構成單位。作為(甲基)丙烯酸酯單體,較佳使用烷基之碳數為1~18之(甲基)丙烯酸烷基酯,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。且,能夠舉出(甲基)丙烯酸縮水甘油、(甲基)丙烯酸羥乙酯等之具有環氧基或羥基之(甲基)丙烯酸酯單體等。 Examples of the acrylic polymer include (meth)acrylate copolymers composed of structural units derived from (meth)acrylic acid derivatives. Here, as the (meth)acrylic acid derivative, in addition to (meth)acrylic acid itself, (meth)acrylic acid ester monomers are also mentioned. In addition, the (meth)acrylate copolymer contains structural units derived from (meth)acrylate monomers. As the (meth)acrylate monomer, it is preferable to use an alkyl (meth)acrylate having 1 to 18 carbon atoms, such as methyl (meth)acrylate, ethyl (meth)acrylate, ( Propyl meth)acrylate, butyl (meth)acrylate, etc. In addition, a (meth)acrylate monomer having an epoxy group or a hydroxyl group, such as glycidyl (meth)acrylate, hydroxyethyl (meth)acrylate, or the like can be given.
上述之中,若使用甲基丙烯酸縮水甘油等作為構成單位,將環氧丙基導入丙烯酸系聚合物,則與作為前述熱硬化性成分之環氧樹脂的相溶性會提升,熱硬化性保護膜形成用薄膜22之硬化後的玻璃轉移溫度(Tg)會變高,耐熱性會提升。且,上述之中,若使用丙烯酸羥乙基等作為構成單位,將羥基導入丙烯酸系聚合物,則能夠
控制對半導體晶片之密著性或黏著物性。
Among the above, if glycidyl methacrylic acid or the like is used as a structural unit, and the glycidyl group is introduced into the acrylic polymer, the compatibility with the epoxy resin as the thermosetting component is improved, and the thermosetting protective film The glass transition temperature (Tg) after hardening of the forming
作為黏合劑聚合物,使用丙烯酸系聚合物時,該聚合物之重量平均分子量較佳為10萬以上,特別佳為15萬~100萬。丙烯酸系聚合物之玻璃轉移溫度通常為30℃以下,較佳為-70~10℃左右。 When an acrylic polymer is used as the binder polymer, the weight average molecular weight of the polymer is preferably 100,000 or more, and particularly preferably 150,000 to 1 million. The glass transition temperature of the acrylic polymer is usually 30°C or lower, preferably about -70 to 10°C.
熱硬化性成分與黏合劑聚合物成分之摻混比率係相對於黏合劑聚合物成分100重量份,摻混較佳為50~1500重量份,更較佳為70~1000重量份,再較佳為80~800重量份之熱硬化性成分。若以如此之比例摻混熱硬化性成分與黏合劑聚合物成分,則硬化前會顯示適度的附著,能夠安定地進行貼附作業,且硬化後能夠得到被膜強度優異之保護膜。 The blending ratio of the thermosetting component and the binder polymer component is relative to 100 parts by weight of the binder polymer component, and the blending is preferably 50 to 1500 parts by weight, more preferably 70 to 1000 parts by weight, and more preferably It is 80~800 parts by weight of thermosetting components. If the thermosetting component and the binder polymer component are blended in such a ratio, moderate adhesion will be shown before curing, the attachment work can be performed stably, and a protective film with excellent coating strength can be obtained after curing.
熱硬化性保護膜形成用薄膜22亦可含有著色劑以及填料之至少任一者。藉此,將保護膜22A之光線透過率控制在所期望之範圍,能夠得到可見性優異之雷射印字。
The
且,熱硬化性保護膜形成用薄膜22若含有填料,則能夠高度維持硬化後之保護膜22A的硬度,同時,能夠使耐濕性提升。進而,能夠將硬化後之保護膜22A的熱膨脹係數接近半導體晶片15的熱膨脹係數,藉此,能夠進一步降低半導體晶片15之翹曲。
In addition, if the
作為著色劑,能夠使用無機系顏料、有機系顏料、有機系染料等公知者,使用有機系顏料或有機系染料較佳。 As the colorant, known ones such as inorganic pigments, organic pigments, and organic dyes can be used, and it is preferable to use organic pigments or organic dyes.
作為無機系顏料,有舉例如碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、鉑系色素、ITO(氧化銦錫)系色素、ATO(氧化銻錫)系色素等。 Examples of inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, and ITO (oxidized Indium tin pigments, ATO (antimony tin oxide) pigments, etc.
作為有機系顏料以及有機系染料,有舉例如胺鎓系色素、花青系色素、部花青系色素、克酮酸系色素、方酸菁系色素、甘菊蘭系色素、聚次甲基系色素、萘醌系色素、吡喃系色素、酞青系色素、萘酞青系色素、萘內醯亞胺系色素、偶氮系色素、縮合偶氮系色素、靛系色素、紫環酮系色素、苝系色素、雙噁嗪系色素、喹吖酮系色素、異吲哚啉酮系色素、喹啉黃系色素、吡咯系色素、硫靛系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚苯酚系色素、三烯甲烷系色素、菎蔥系色素、雙噁嗪系色素、萘酚系色素、偶氮甲鹹系色素、苯并咪唑酮系色素、皮蒽酮系色素以及還原系色等。此等之顏料或染料為了要調整至目的之光線透過率,能夠適當地混合使用。 Examples of the organic pigments and organic dyes include amine onium pigments, cyanine pigments, merocyanine pigments, crotonic acid pigments, squarylium pigments, chamomile pigments, and polymethine pigments. , Naphthoquinone-based pigments, pyran-based pigments, phthalocyanine-based pigments, naphthalocyanine-based pigments, naphthalene imide-based pigments, azo-based pigments, condensed azo-based pigments, indigo-based pigments, indigo-based pigments , Perylene pigment, bisoxazine pigment, quinacridone pigment, isoindolinone pigment, quinoline yellow pigment, pyrrole pigment, thioindigo pigment, metal complex pigment (metal complex salt) Dyes), dithiol metal complex pigments, indolephenol pigments, triene methane pigments, scallion pigments, dioxazine pigments, naphthol pigments, azomethine pigments, benzo Imidazolone-based pigments, picanthrone-based pigments, and reduced-based colors. These pigments or dyes can be appropriately mixed and used in order to adjust the light transmittance to the purpose.
此等之中,顏料、使用無機系顏料特別佳,無機系顏料之中,以碳黑特別佳。碳黑通常為黑色,藉由雷射光照射,形成凹部的部分與未照射的部分之對比差會變大,因此雷射印字後部分的可見性非常優異。 Among these, pigments and inorganic pigments are particularly preferred, and among inorganic pigments, carbon black is particularly preferred. Carbon black is usually black. By laser light irradiation, the contrast difference between the portion where the concave portion is formed and the unirradiated portion becomes larger. Therefore, the visibility of the portion after laser printing is excellent.
作為填料,有舉出結晶矽石、溶融矽石、合成矽石等之矽石或氧化鋁、玻璃氣球等之無機填料。其中,以合成矽石較佳,尤其是將成為半導體裝置之錯誤作 動之要因的α線之線源極力去除之型式的合成矽石最適當。作為填料之形狀,亦可為球形、針狀、不定形之任一者。 Examples of the filler include silica, crystalline silica, fused silica, synthetic silica, and other inorganic fillers such as alumina and glass balloons. Among them, it is better to use synthetic silica, especially because it will become a mistake for semiconductor devices. Synthetic silica of the type that the source of the movement of the alpha line is most strongly removed is most suitable. The shape of the filler may be any of spherical, needle-shaped, and indefinite.
且,作為添加於熱硬化性保護膜形成用薄膜22中的填料,除了上述無機填料之外,亦可摻混機能性之填料。作為機能性之填料,有舉例如以晶片黏合後之導電性的賦予作為目的之金、銀、銅、鎳、鋁、不鏽鋼、碳、陶瓷、或將鎳、鋁等以銀被覆之導電性填料、或以熱傳導性之賦予為目的之金、銀、銅、鎳、鋁、不鏽鋼等之金屬材料或此等之合金、此等金屬材料之氧化物或氮化物、矽、鍺等之非金屬、以及硼等之非金屬的氮化物等之熱傳導性填料等。
In addition, as the filler added to the
著色劑之摻混量通常為0.001~5質量%較佳,為0.01~3質量%特別佳,為0.1~2.5質量%再較佳。且,填料之摻混量通常為40~80質量%較佳,為50~70質量%特別佳。 The blending amount of the coloring agent is usually 0.001 to 5% by mass, preferably 0.01 to 3% by mass, particularly preferably 0.1 to 2.5% by mass. Moreover, the blending amount of the filler is usually 40 to 80% by mass, preferably 50 to 70% by mass.
熱硬化性保護膜形成用薄膜22亦可含有偶合劑。藉由含有偶合劑,在熱硬化性保護膜形成用薄膜22之硬化後,不會損及保護膜22A之耐熱性,能夠提升保護膜22A與晶片15之接著性以及密著性,同時也能夠提升耐水性(耐濕熱性)。作為偶合劑,以其廣用性與成本效益等來看,以矽烷偶合劑較佳。
The
作為矽烷偶合劑,有舉例如γ-縮水甘油氧丙基三甲氧矽烷、γ-縮水甘油氧丙基甲基二乙氧矽烷、β- (3,4-環氧基環己基)乙基三甲氧矽烷、γ-(甲基丙烯醯氧丙基)三甲氧矽烷、γ-胺基丙基三甲氧矽烷、N-6-(胺基乙基)-γ-胺基丙基三甲氧矽烷、N-6-(胺基乙基)-γ-胺基丙基甲基二乙氧矽烷、N-苯基-γ-胺基丙基三甲氧矽烷、γ-脲基丙基三乙氧矽烷、γ-氫硫基丙基三甲氧矽烷、γ-氫硫基丙基甲基二甲氧矽烷、雙(3-三乙氧基矽烷基丙基)四硫烷、甲基三甲氧矽烷、甲基三乙氧矽烷、乙烯三甲氧矽烷、乙烯三甲氧矽烷、咪唑矽烷等。此等能夠單獨使用1種,或混合2種以上來使用。 Examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-Epoxycyclohexyl)ethyltrimethoxysilane, γ-(methacryloxypropyl)trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl Group)-γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropylmethyl diethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane Silane, γ-ureidopropyltriethoxysilane, γ-hydrothiopropyltrimethoxysilane, γ-hydrothiopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl ) Tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, ethylenetrimethoxysilane, ethylenetrimethoxysilane, imidazolesilane, etc. These can be used alone or in combination of two or more.
熱硬化性保護膜形成用薄膜22為了調節硬化前之凝集力,亦可含有有機多元異氰酸酯化合物、有機多元胺化合物、有機金屬螯合化合物等之交聯劑。且,熱硬化性保護膜形成用薄膜22為了抑制靜電,並提升晶片之信賴性,亦可含有靜電防止劑。進而,熱硬化性保護膜形成用薄膜22為了提高保護膜之難燃性能,且提升作為外殼之信賴性,亦可含有磷酸化合物、溴化合物、磷系化合物等之難燃劑。
The
熱硬化性保護膜形成用薄膜22之厚度為了有效地發揮作為保護膜之機能,為3~300μm較佳,為5~250μm特別佳,為7~200μm再更佳。
The thickness of the
附有支持體之保護膜形成用薄膜20在其使用前,亦可由剝離薄片來保護。剝離薄片是積層在與熱硬化性保護膜形成用薄膜22之支持體21側之面相反側之面,且保護露出在外部之熱硬化性保護膜形成用薄膜22、以
及黏著劑層21B等。剝離薄片有例示例如將塑膠薄膜以剝離劑等進行剝離處理者。剝離薄片是附有支持體之保護膜形成用薄膜20貼附於半導體晶片15(半導體晶圓10)之前被剝離者。
Before use, the
附有支持體之保護膜形成用薄膜20能夠藉由製作保護膜形成用薄膜積層體以及支持體後再將此等貼合所製作。
The
保護膜形成用薄膜積層體例如由以下方式來製作。 The thin-film laminate for forming a protective film is produced, for example, in the following manner.
將構成上述熱硬化性保護膜形成用薄膜之各成分以適當的比例,於適當的溶媒中或於無溶媒中混合,形成保護膜形成用薄膜用塗布液,將此塗布液於第1剝離薄片上塗布乾燥,在第1剝離薄片上形成熱硬化性保護膜形成用薄膜。接著,於此熱硬化性保護膜形成用薄膜上進一步貼附第2剝離薄片,得到第1剝離薄片/熱硬化性保護膜形成用薄膜/第2剝離薄片之三層構造而成的保護膜形成用薄膜積層體。保護膜形成用薄膜積層體亦可適當地作為捲取之卷收體來保管、運搬等。且,以上之步驟中,亦可省略貼附第2剝離薄片之步驟,直接露出保護膜形成用薄膜。 The components constituting the film for forming a thermosetting protective film are mixed in a suitable solvent or in a solvent-free manner at an appropriate ratio to form a coating solution for a film for forming a protective film, and the coating solution is applied to the first release sheet The upper coating is dried, and a thin film for forming a thermosetting protective film is formed on the first release sheet. Next, a second release sheet was further attached to the thermosetting protective film forming film to obtain a protective film formed by a three-layer structure of a first release sheet/thermosetting protective film forming film/second release sheet. Use a film laminate. The thin film layered body for forming a protective film may be appropriately stored, transported, etc. as a rolled up body. In addition, in the above steps, the step of attaching the second release sheet may be omitted, and the film for forming a protective film may be directly exposed.
以下針對支持體具備基材與設置在基材之一側的面之黏著劑層時的支持體之製作方法進行說明。 The following describes a method of manufacturing the support when the support includes a base material and an adhesive layer provided on one side of the base material.
將構成黏著劑層之各成分以適當的比例於適當的溶媒中或於無溶媒中混合而成的黏著劑層用塗布液塗布於剝離薄片上並乾燥,在剝離薄片上形成黏著劑層,之後,在黏著劑層上貼合基材,得到附有剝離薄片之支持體。附有剝離薄片之支持體亦可適當地作為捲取之卷收體來保管、運搬等。 The components of the adhesive layer are mixed in a suitable solvent in an appropriate ratio or in a solvent-free layer, and the coating solution for the adhesive layer is applied to the release sheet and dried to form an adhesive layer on the release sheet. , Laminating the substrate on the adhesive layer to obtain a support with a peeling sheet. The support with the peeling sheet can also be appropriately stored and transported as a rolled up body.
且,將黏著劑層用塗布液直接塗布於基材形成黏著劑層,來取代塗布於剝離薄片上,之後,亦可進一步於黏著劑層上貼合剝離薄片,作為附有剝離薄片之支持體。惟,亦可省略貼合剝離薄片之步驟,直接露出黏著劑層。 In addition, the coating liquid for the adhesive layer is directly applied to the substrate to form an adhesive layer, instead of being coated on the release sheet, and then, the release sheet can be further laminated on the adhesive layer as a support with a release sheet . However, the step of attaching and peeling the sheet can also be omitted, and the adhesive layer is directly exposed.
於此,設置於基材上之黏著劑層是由能量線硬化型之黏著劑所成時,其黏著劑在貼合於熱硬化性保護膜形成用薄膜之前,亦可照射能量線並使其硬化,貼合於熱硬化性保護膜形成用薄膜後,亦可照射能量線並使其硬化。貼合於熱硬化性保護膜形成用薄膜之後,對黏著劑照射能量線時,亦可在上述貼附步驟自拾取步驟中的任一段階進行能量線照射。能量線照射而成之黏著劑的硬化時,只要至少使接觸熱硬化性保護膜形成用薄膜之部分硬化即可。 Here, when the adhesive layer provided on the base material is formed of an energy ray hardening type adhesive, the adhesive can also be irradiated with energy rays before being attached to the thermosetting protective film forming film After hardening, it can be irradiated with energy rays and hardened after being attached to the thin film for forming a thermosetting protective film. After bonding to the thin film for forming a thermosetting protective film, when irradiating the adhesive with an energy ray, the energy ray may be irradiated from any step in the picking step in the above-mentioned attaching step. When the adhesive irradiated with energy rays is hardened, at least the portion in contact with the film for forming the thermosetting protective film may be hardened.
之後,因應必要自保護膜形成用薄膜積層體剝離一側的剝離薄片(例如第2剝離薄片),同時因應必要自附有 剝離薄片之支持體剝離剝離薄片,於支持體之黏著劑層面貼合熱硬化性保護膜形成用薄膜,製作附有支持體之保護膜形成用薄膜。 After that, if necessary, the peeling sheet (for example, the second peeling sheet) on one side of the thin film laminate for forming a protective film is peeled off. Support of release sheet The release sheet is peeled, and a film for forming a thermosetting protective film is laminated on the adhesive layer of the support to produce a film for forming a protective film with a support.
且,亦可因應必要將上述保護膜形成用薄膜積層體施予脫模加工後,貼合於支持體上。 Furthermore, the thin film laminate for forming a protective film may be applied to a support after being subjected to release processing as necessary.
脫模加工是藉由以下來進行:以切斷一側剝離薄片(例如第2剝離薄片)與熱硬化性保護膜形成用薄膜之方式半切上述保護膜形成用薄膜積層體,使其成為與晶片相同大小或是大一圈的例如圓形,之後,在其一側之剝離薄片與熱硬化性保護膜形成用薄膜中,去除存在於施予半切之圓形之外者。同樣地,亦可在支持體上也形成適當的切口,再適當地調整其形狀。 The release process is performed by cutting the above-mentioned thin film laminate for protective film formation in half in such a manner as to cut off one side of the release sheet (for example, the second release sheet) and the thermosetting protective film forming film. For example, a circle with the same size or a large circle, and then, the peeling sheet on one side and the film for forming a thermosetting protective film are removed from the circle that is half-cut. Similarly, it is also possible to form an appropriate cut in the support and then adjust its shape appropriately.
且,如圖8所示,設置環狀框架用黏著劑層時,附有支持體之保護膜形成用薄膜也能夠同樣地來製作,但只要在與貼合有熱硬化性保護膜形成用薄膜之支持體之面的相反側之面形成適宜環狀框架用黏著劑層即可。 Furthermore, as shown in FIG. 8, when the adhesive layer for the ring-shaped frame is provided, the film for forming a protective film with a support can also be produced in the same manner, but as long as the film for forming a thermosetting protective film is bonded to the film It is sufficient to form an adhesive layer suitable for the ring-shaped frame on the surface opposite to the surface of the support.
以下,以實施例進一步具體說明本發明,但本發明之範不限定於此等之實施例。 Hereinafter, the present invention will be further specifically described with examples, but the scope of the present invention is not limited to these examples.
在實施例以及比較例中,拾取後之附有保護膜之晶片由以下方法來評估。 In the examples and comparative examples, the wafer with a protective film after being picked up was evaluated by the following method.
如圖10所示,將拾取後之附有保護膜之晶片24以晶片正面在上側之方式靜置於玻璃板40上,以此狀態測定晶片24之最低位置S與最高位置H的差作為翹曲量。晶片翹曲量為300μm以下時評估為“A”,超過300μm且600μm以下時評估為“B”,超過600μm且1mm以下時評估為“C”,比1mm大時評估為“D”。
As shown in FIG. 10, the
首先,混合以下成分(a)~(f),以甲乙酮稀釋使固形分濃度成為61質量%,得到保護膜形成用薄膜用塗布液。 First, the following components (a) to (f) were mixed and diluted with methyl ethyl ketone to make the solid content concentration 61% by mass to obtain a coating liquid for a thin film for forming a protective film.
(a)黏合劑聚合物:共聚合n-丁基丙烯酸酯10質量份、甲基丙烯酸酯70質量份、縮水甘油甲基丙烯酸酯5質量份以及2-羥乙基丙烯酸酯15質量份之(甲基)丙烯酸酯共聚合物100質量份(固形分換算以下相同);重量平均分子量:80萬,玻璃轉移溫度:-1℃ (a) Binder polymer: copolymerize 10 parts by mass of n-butyl acrylate, 70 parts by mass of methacrylate, 5 parts by mass of glycidyl methacrylate, and 15 parts by mass of 2-hydroxyethyl acrylate ( 100 parts by mass of meth)acrylate copolymer (solid content conversion is the same below); weight average molecular weight: 800,000, glass transition temperature: -1℃
(b)熱硬化性成分:雙酚A型環氧樹脂(三菱化學股份公司製,jER828,環氧當量184~194g/eq)60質量份、雙酚A型環氧樹脂(三菱化學股份公司製,jER1055,環氧當量800~900g/eq)10質量份、以及二環戊二烯型環氧樹脂(大日本Ink化學工業股份公司製, EPICLON HP-7200HH,環氧當量255~260g/eq)30質量份 (b) Thermosetting components: bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER828, epoxy equivalent 184~194g/eq) 60 parts by mass, bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation) , JER1055, epoxy equivalent of 800~900g/eq) 10 parts by mass, and dicyclopentadiene type epoxy resin (made by Great Japan Ink Chemical Industry Co., Ltd., EPICLON HP-7200HH, epoxy equivalent 255~260g/eq) 30 parts by mass
(c)熱活性潛在性環氧樹脂硬化劑:二氰二胺(ADEKA股份公司製,ADEKA HARDENER EH-3636AS,活性氫量21g/eq)2質量份、以及2-苯基-4,5-二羥基甲基咪唑(四國化成工業股份公司製,Curezol 2PHZ)2質量份 (c) Thermally active latent epoxy resin hardener: dicyandiamide (made by ADEKA Corporation, ADEKA HARDENER EH-3636AS, active hydrogen content 21g/eq) 2 parts by mass, and 2-phenyl-4,5- Dihydroxymethylimidazole (made by Shikoku Chemical Industry Co., Ltd., Curezol 2PHZ) 2 parts by mass
(d)著色劑:碳黑(三菱化學股份公司製,#MA650,平均粒徑28nm)0.6質量份 (d) Colorant: carbon black (Made by Mitsubishi Chemical Corporation, #MA650, average particle diameter 28 nm) 0.6 parts by mass
(e)填料:矽石填料(Admatechs公司製,SC2050MA,平均粒徑0.5μm)320質量份 (e) Filler: silica filler (manufactured by Admatechs, SC2050MA, average particle size 0.5 μm) 320 parts by mass
(f)矽烷偶合劑:γ-縮水甘油氧丙基三甲氧矽烷(信越化學工業股份公司製:KBM-403,甲氧當量:12.7mmol/g,分子量:236.3)0.4質量份 (f) Silane coupling agent: γ-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.: KBM-403, methoxy equivalent: 12.7 mmol/g, molecular weight: 236.3) 0.4 parts by mass
將上述保護膜形成用薄膜用塗布液塗布於第1剝離薄片(Lintec股份公司製,SP-PET3811,厚度38μm)之剝離處理面上,於烘箱中以120℃乾燥2分鐘,於第1剝離薄片上形成熱硬化性保護膜形成用薄膜。形成後之熱硬化性保護膜形成用薄膜的厚度為25μm。於熱硬化性保護膜形成用薄膜上貼合第2剝離薄片(Lintec股份公司製,SP-PET381031,厚度38μm)之剝離處理面,得到由第1剝離薄片/熱硬化性保護膜形成用薄膜/第2剝離薄片之3層構造而成的保護膜形成用薄膜積層體。此積層體較長,且捲取作為卷收體。 The above-mentioned coating liquid for forming a protective film was applied to the peeling surface of the first release sheet (produced by Lintec Corporation, SP-PET3811, thickness 38 μm), dried in an oven at 120° C. for 2 minutes, and applied to the first release sheet A thin film for forming a thermosetting protective film is formed thereon. The thickness of the thin film for forming a thermosetting protective film after formation was 25 μm. A peeling surface of a second release sheet (produced by Lintec Corporation, SP-PET381031, thickness 38 μm) was bonded to the film for forming a thermosetting protective film to obtain the first release sheet/film for forming a thermosetting protective film/ A thin film laminate for forming a protective film formed by a three-layer structure of a second release sheet. This layered body is longer, and the take-up is taken as the take-up body.
將上述所得之較長的保護膜形成用薄膜積層 體之卷收體往寬度方向裁斷300mm。接著,對保護膜形成用薄膜積層體自第2剝離薄片側以切斷第2剝離薄片以及熱硬化性保護膜形成用薄膜之方式,對當該積層體之寬度方向中央部連續地施予直徑220mm之圓形的半切。之後,將存在於以半切所形成之圓形之外側的第2剝離薄片以及熱硬化性保護膜形成用薄膜去除。藉此,保護膜形成用薄膜積層體係在第1剝離薄片之剝離面上積層圓形的熱硬化性保護膜形成用薄膜、以及圓形的第2剝離薄片所成。 Laminating the long thin film for protective film formation obtained above The retracted body is cut 300mm in the width direction. Next, a diameter is applied continuously to the central portion in the width direction of the layered body of the thin film laminate for forming a protective film from the second release sheet side so as to cut the second release sheet and the thermosetting protective film forming film 220mm round half cut. After that, the second peeling sheet and the thermosetting protective film forming film existing outside the circle formed by half-cutting are removed. In this way, the thin film layering system for forming a protective film is formed by stacking a circular thermosetting protective film forming film and a circular second release sheet on the peeling surface of the first release sheet.
首先,混合(g)以及(h)之成分,使固形分濃度成為30質量%,並以甲乙酮稀釋,調製黏著劑層用塗布劑。 First, the components (g) and (h) were mixed so that the solid content concentration became 30% by mass, and diluted with methyl ethyl ketone to prepare a coating agent for an adhesive layer.
(g)黏著主劑:(甲基)丙烯酸酯共聚合物(共聚合丁基丙烯酸酯40質量份、2-乙基己基丙烯酸酯55質量份、以及2-羥基乙基丙烯酸酯5質量份所得之共聚合物,重量平均分子量:60萬)100質量份 (g) Adhesive main agent: (meth)acrylate copolymer (copolymerized with 40 parts by mass of butyl acrylate, 55 parts by mass of 2-ethylhexyl acrylate, and 5 parts by mass of 2-hydroxyethyl acrylate) Copolymer, weight average molecular weight: 600,000) 100 parts by mass
(h)交聯劑:芳香族系聚異氰酸酯化合物(三井化學股份公司製,Takenate D110N)10質量份 (h) Crosslinking agent: aromatic polyisocyanate compound (Makei Chemical Co., Ltd., Takenate D110N) 10 parts by mass
將前述之黏著劑層用塗布劑以刀刃塗膜塗布於剝離薄片(LINTEC股份公司製:SP-PET381031)之剝離面上並使其乾燥,形成黏著劑層。形成後之黏著劑層的厚度為10μm。之後,於黏著劑層貼合厚度為100μm之聚 丙烯薄膜(三菱樹脂股份公司製,商品名「CT265」)而成的基材,得到附有剝離薄片之支持體。附有剝離薄片之支持體較長,且捲取後作為卷收體,之後往寬度方向裁斷300mm。 The above-mentioned adhesive layer coating agent was applied to the peeling surface of a release sheet (manufactured by Lintec Co., Ltd.: SP-PET381031) with a blade coating film, and dried to form an adhesive layer. The thickness of the adhesive layer after formation was 10 μm. After that, apply a polymer with a thickness of 100 μm to the adhesive layer A substrate made of acrylic film (manufactured by Mitsubishi Resin Co., Ltd., trade name "CT265") was obtained with a support having a peeling sheet. The support body with the peeling sheet is longer, and it is taken up as a winding body, and then cut 300mm in the width direction.
自上述(1)所得之保護膜形成用薄膜積層體剝離圓形之第2剝離薄片,使圓形之熱硬化性保護膜形成用薄膜露出。另一方面,自上述(2)所得之附有剝離薄片之支持體將剝離薄片剝離,使黏著劑層露出。在保護膜形成用薄膜積層體上貼合支持體使其黏著劑層與上述熱硬化性保護膜形成用薄膜接觸,得到在熱硬化性保護膜形成用薄膜側有被1剝離薄片保護之附有支持體之保護膜形成用薄膜。 The circular second peeling sheet was peeled from the thin film laminate for forming a protective film obtained in the above (1) to expose the circular thin film for forming a thermosetting protective film. On the other hand, the release sheet-attached support obtained from (2) above peels the release sheet to expose the adhesive layer. A support is attached to the film laminate for forming a protective film so that its adhesive layer is in contact with the film for forming a thermosetting protective film, and a film protected by a release sheet is provided on the film side for forming a thermosetting protective film. A thin film for forming a protective film of a support.
對所得之附有支持體之保護膜形成用薄膜自基材側往基材以及黏著劑層形成切口,得到於直徑270mm之支持體上積層有直徑220mm之熱硬化性保護膜形成用薄膜之附有支持體之保護膜形成用薄膜。惟,此附有支持體之保護膜形成用薄膜在熱硬化性保護膜形成用薄膜側有被第1剝離薄片保護。 The resulting film for forming a protective film with a support was cut from the substrate side to the substrate and the adhesive layer to obtain a film having a thermosetting protective film having a diameter of 220 mm laminated on a support having a diameter of 270 mm. A thin film for forming a protective film with a support. However, the film for forming a protective film with a support is protected by the first release sheet on the side of the film for forming a thermosetting protective film.
接著,使用上述附有支持體之保護膜形成用薄膜,以下述步驟來進行,製作附有保護膜之晶片。 Next, using the above-mentioned thin film for forming a protective film with a support, the following steps were performed to produce a wafer with a protective film.
前處理步驟:使用股份公司DISCO製之Dicer DFD6361,對晶片正面上具有厚度10μm之聚亞醯胺膜(有機膜13)的600μm厚度之晶片10進行半切,形成180μm深度之溝11(參照圖1)。
Pre-processing steps: Using Dicer DFD6361 made by DISCO, a stock company, half-cut the 600 μm
晶片單片化步驟:接著,使用Lintec股份公司製之Laminator RAD-3510F/12,於晶片10之正面上貼附背面研磨膠帶16(Lintec股份公司製Adwill E-3125),之後,使用股份公司DISCO製Grinder DFG8760,將晶片10自背面側研磨至厚度150μm,將晶片10單片化成複數的晶片15(參照圖2、3)。
Wafer singulation step: Next, using the Laminator RAD-3510F/12 manufactured by Lintec Corporation, the back surface abrasive tape 16 (Adwill E-3125 manufactured by Lintec Corporation) is attached to the front surface of the
貼附步驟:使用Lintec股份公司製Mounter RAD-2700F/12,將剝離第1剝離薄片之附有支持體之保護膜形成用薄膜20以溫度70℃貼附於單片化成晶片15之晶片10的背面。此時,附有支持體之保護膜形成用薄膜20的外周區域有貼附環狀框架25(參照圖4)。之後,對背面研磨膠帶16以500mJ/cm2之條件進行UV照射,將背面研磨膠帶用黏著劑層硬化後,剝離背面研磨膠帶16。
Attaching procedure: Using Mounter RAD-2700F/12 made by Lintec Co., Ltd., the
熱硬化步驟:接著,將貼附有複數晶片15以及環狀框架25之附有支持體之保護膜形成用薄膜20放置於130℃之烘箱30內部2小時,將熱硬化性保護膜形成用薄膜22硬化,得到保護膜22A(參照圖5)。
Thermal hardening step: Next, the
保護膜分割步驟:之後,使用股份公司DISCO製雷射Dicer DFL7160,將晶片15間所露出的保護膜22A以雷射切斷,分割保護膜22A,之後,以旋轉器進行洗淨
(參照圖6)。
Protective film division step: After that, the Dicer DFL7160 made by DISCO Co., Ltd. was used to cut the
拾取步驟:接著,使用Canon-machinery股份公司製之Die Bonder BESTEM D02拾取分割後的背面積層有保護膜22A之各個附有保護膜之晶片24,自支持體21剝離(參照圖7)。所得之附有保護膜之晶片24的晶片大小為寬度1mm,長度20mm。
Picking up step: Next, the die-attached
除了藉由替換熱硬化步驟與保護膜分割步驟的實施順序,將熱硬化性保護膜形成用薄膜分割後再熱硬化以外,其餘與實施例1同樣地製作附有保護膜之晶片。 A wafer with a protective film was produced in the same manner as in Example 1 except that the thermal curing step and the protective film dividing step were replaced, and the thermosetting protective film forming film was divided and then thermally cured.
不在貼附步驟與保護膜分割步驟之間進行熱硬化步驟,將拾取步驟後經單片化的晶片放置於130℃的烘箱內部2小時,除了將熱硬化性保護膜形成用薄膜硬化以外,其餘與實施例1同樣地製作附有保護膜之晶片。 The thermosetting step is not performed between the attaching step and the protective film dividing step. The singulated wafer after the picking step is placed in an oven at 130° C. for 2 hours, except that the thermosetting protective film forming film is cured. As in Example 1, a wafer with a protective film was produced.
不進行溝形成步驟,在晶片單片化步驟中不以背面研磨將晶片單片化。且,取代實施上述保護膜分割步驟,是以切割刀刃自晶片的正面側以切入支持體10μm之方式將晶片以及保護膜同時切斷,得到經單片化之附有保護膜之晶片。比較例2除了以上之點之外,其餘與實施例1同樣
地製作附有保護膜之晶片。
The groove forming step is not performed, and the wafer is not singulated by back grinding in the wafer singulation step. Furthermore, instead of performing the above protective film dividing step, the wafer and the protective film are simultaneously cut by cutting the blade from the front side of the wafer by cutting the
針對上述各實施例、比較例,基於上述評估方法進行評估。將其結果表示於表1。 For each of the above-mentioned embodiments and comparative examples, evaluation was performed based on the above-mentioned evaluation method. Table 1 shows the results.
由以上之實施例1、2之結果可明顯得知以先前切割法將半導體晶圓單片化的同時,藉由在拾取之前將熱硬化性保護膜形成用薄膜熱硬化,能夠抑制晶片的翹曲。且,藉由在保護膜分割前進行其熱硬化,能夠更有效地抑制晶片之翹曲。 From the results of Examples 1 and 2 above, it is clear that while the semiconductor wafer is singulated by the previous dicing method, by thermally curing the thin film for forming a thermosetting protective film before picking up, the warpage of the wafer can be suppressed song. Furthermore, by thermally curing the protective film before it is divided, the warpage of the wafer can be more effectively suppressed.
另一方面,在比較例1中,由於是在拾取後將熱硬化性保護膜形成用薄膜熱硬化,故無法充分地抑制晶片之翹曲。且,比較例2中,由於不使用先前切割法在切割後將晶片單片化,故無法充分地抑制晶片之翹曲。 On the other hand, in Comparative Example 1, since the thin film for forming a thermosetting protective film is thermoset after picking up, the warpage of the wafer cannot be sufficiently suppressed. Furthermore, in Comparative Example 2, since the wafer is singulated after dicing without using the previous dicing method, the warpage of the wafer cannot be sufficiently suppressed.
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