JP6519077B2 - Semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device in which a semiconductor wafer is singulated by a dicing method and a protective film is formed on the back surface of a semiconductor chip.

  Conventionally, a pre-dicing method is known in which dicing is performed prior to back surface grinding for adjusting the thickness of a wafer. In the pre-dicing method, a cut groove is formed from the wafer surface by dicing, and then the back surface is ground to reach at least the bottom surface of the cut groove, and the thickness adjustment and the division of the semiconductor wafer into chips are simultaneously performed by back surface grinding. It is something to do.

As disclosed in, for example, Patent Document 1, it is known that a chip divided by the pre-dicing method is mounted after forming an adhesive layer (die bond) for chip fixation on the back surface of the chip.
In this case, specifically, first, the adhesive film side of the composite film in which the adhesive film is laminated on the support is attached to the wafer divided into a plurality of chips. Thereafter, the adhesive film is cut by laser irradiation along the chip intervals of the divided chips, whereby an adhesive layer made of the adhesive film is formed on the back surface of each chip. Each chip having the adhesive layer formed on the back surface is separated from the support by being picked up and mounted on a lead frame, a substrate or the like to manufacture a semiconductor device.

JP, 2013-153071, A

  In recent years, semiconductor devices have been manufactured by a mounting method called face-down method. In this method, when a semiconductor chip having a circuit surface on which electrodes such as bumps are formed is mounted, the circuit surface side of the semiconductor chip is joined to a chip mounting portion such as a lead frame. Therefore, since the back surface side of the semiconductor chip in which the circuit is not formed is exposed, a protective film made of a hard organic material may be formed on the back surface of the semiconductor chip in order to protect the semiconductor chip. .

  Here, in the case where a film for forming a protective film is applied to a plurality of semiconductor chips obtained by the pre-dicing method, it is necessary to cut the protective film before mounting the semiconductor chip with the protective film. There is. However, at the time of film cutting, there may be a problem that debris scattered from the film adheres to the chip surface. Although the generation of this debris is suppressed by adjusting the tensile storage elastic modulus of the film in Patent Document 1, the adhesion of the debris to the chip may not be sufficiently suppressed, and the design of the film material is limited. May occur.

  The present invention has been made in view of the above problems, and it is desirable to separate chips by the dicing method and suppress adhesion of debris generated when chips are formed on the back surface of the chip. An object of the present invention is to provide a method of manufacturing a possible semiconductor device.

As a result of intensive studies, the present inventors have found that the above-mentioned problems can be solved by dividing the protective film after curing the curable protective film-forming film for forming the protective film, and complete the present invention The That is, the present invention provides the following (1) to (6).
(1) a groove forming step of forming a groove from the surface side of a semiconductor wafer;
A chip singulation step of grinding the semiconductor wafer from the back surface side to the groove and singulating into a plurality of chips;
Affixing step of affixing the curable protective film forming film side of the protective film with support having a curable protective film forming film on a support to the back surface of the singulated semiconductor wafer;
A curing step of curing the curable protective film-forming film attached to the semiconductor wafer into a protective film;
A protective film dividing step of cutting the protective film attached to the back surface of the semiconductor wafer with a laser along a chip interval and dividing it into a shape corresponding to each chip after the curing step; .
(2) The protective film-forming film is a thermosetting protective film-forming film, and the support has a substrate, and the substrate is made of one selected from the group consisting of a polyester film and a polypropylene film The method of manufacturing a semiconductor device according to the above (1), wherein the film has at least one layer or more.
(3) The manufacturing method of the semiconductor device as described in said (1) or (2) which performs laser marking to the said protective film after the said hardening process.
(4) The semiconductor device according to any one of (1) to (3), further including a pickup step of picking up a chip with a protective film in which the protective film is stacked on the chip after the protective film dividing step. Production method.
(5) The method for manufacturing a semiconductor device according to (4), wherein the protective film is laser-marked between the curing step and the pickup step.
(6) The method of manufacturing a semiconductor device according to (3) or (5), wherein the laser marking is performed between the curing step and the protective film dividing step.

  According to the above-described manufacturing method of the present invention, it is possible to separate chips into chips by the pre-dicing method and suppress adhesion of debris generated when the protective film is formed on the back surface of the chips.

FIG. 13 is a schematic cross-sectional view showing the step of forming a groove on the wafer surface in the method of manufacturing a semiconductor device. It is a typical sectional view showing the process of sticking a back grind tape on the wafer surface in which the slot was formed in the manufacturing method of a semiconductor device. FIG. 13 is a schematic cross-sectional view showing a step of grinding the back surface of the wafer and singulating into semiconductor chips in the method of manufacturing a semiconductor device. It is a typical sectional view showing the process of sticking the protective film formation film with a support on the individualized semiconductor wafer and ring frame in the manufacturing method of a semiconductor device. In the manufacturing method of a semiconductor device, it is a typical sectional view showing the process of thermosetting the curable protective film formation film. FIG. 13 is a schematic cross-sectional view showing the step of dividing the protective film in the method of manufacturing a semiconductor device. FIG. 18 is a schematic cross-sectional view showing a step of picking up a chip with a protective film in the method of manufacturing a semiconductor device. It is a schematic cross section for showing another example of a protective film formation film with a support body.

  Hereinafter, the method for manufacturing a semiconductor device according to the present invention will be described in more detail. In the following description, "weight average molecular weight (Mw)" is a value in terms of polystyrene measured by gel permeation chromatography (GPC). Also, for example, "(meth) acrylate" is used as a term indicating both "acrylate" and "methacrylate", and the same applies to other similar terms.

The manufacturing method of the semiconductor device of the present invention comprises the following steps (i) to (v).
(I) a groove forming step of forming a groove from the surface side of a semiconductor wafer;
(Ii) chip separating step of grinding the semiconductor wafer from the back surface side to the groove to separate the chips into a plurality of chips;
(Iii) Affixing step of affixing the curable protective film forming film side of the protective film with support provided with a curable protective film forming film on a support to the back surface of the singulated semiconductor wafer ;
(Iv) a curing step of curing the curable protective film-forming film attached to the semiconductor wafer into a protective film;
(V) A protective film dividing process of cutting the protective film attached to the back surface of the semiconductor wafer after the curing process with a laser along chip intervals and dividing it into a shape corresponding to each chip

  Hereinafter, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7 are diagrams showing a method of manufacturing a semiconductor device according to an embodiment of the present invention in time series.

[Groove formation process]
As shown in FIG. 1, first, a groove forming step of forming the groove 11 from the surface side of the semiconductor wafer 10 is performed. The groove 11 formed in this process is a groove having a depth shallower than the thickness of the wafer 10. The formation of the groove 11 can be performed using a conventionally known wafer dicing apparatus or the like. The semiconductor wafer 10 is divided into a plurality of semiconductor chips along the grooves 11 in a chip separation process described later.

The semiconductor wafer 10 used in the present embodiment may be a silicon wafer or may be a wafer of gallium arsenide or the like. The thickness of the semiconductor wafer 10 before grinding is not particularly limited, but is usually about 500 to 1000 μm.
The surface of the semiconductor wafer 10 may be coated with an organic film 13 such as a polyimide film, as shown in FIG. The surface of the semiconductor wafer 10 can be protected by providing the organic film 13.
The circuit 12 is formed on the surface of the semiconductor wafer 10. The formation of the circuit 12 on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method.

[Chip separation process]
Next, as shown in FIG. 2, a back grind tape 16 is attached to the surface of the wafer on which the grooves 11 are formed. Thereafter, the back surface of the semiconductor wafer 10 is ground to perform a chip separation step of dividing the semiconductor wafer 10 into a plurality of semiconductor chips 15.
Here, the back grind tape 16 includes a base for back grind tape and an adhesive layer for back grind tape provided on the base, and is attached to the semiconductor wafer 10 through the pressure sensitive adhesive layer. Is preferred. The materials used for the base material for backgrind tape and the pressure-sensitive adhesive layer for backgrind tape can be appropriately selected from known materials. For example, the pressure-sensitive adhesive layer for backgrind tape is more preferably an energy ray-curable pressure-sensitive adhesive Become. Since the back grind tape 16 is attached to the surface of the semiconductor wafer 10, the semiconductor wafer 10 is separated into a plurality of chips 15 on one back grind tape 16, so the separated chips 15 Can be handled integrally without misalignment or the like. In addition, when grinding the back surface of the wafer 10, the circuit 12 can be protected.
However, in the present embodiment, the application of the back grind tape 16 to the wafer can be omitted.

The grinding of the semiconductor wafer is performed on the back surface of the semiconductor wafer 10 so as to reach at least the bottom of the groove 11. By this grinding, as shown in FIG. 3, the grooves become cuts 11A penetrating the wafer, and the semiconductor wafer 10 is divided by the cuts 11A and separated into individual semiconductor chips 15.
The shape of the singulated semiconductor chip 15 is not particularly limited, but may be rectangular or may be an elongated shape such as rectangular.
The thickness of the individualized chip is not particularly limited, but is usually about 10 to 300 μm, preferably 50 to 200 μm.

[Pasting process]
Next, as shown in FIG. 4, a sticking step of sticking the support-equipped protective film-forming film 20 onto the back surface of the semiconductor wafer 10 that has been singulated into a plurality of chips 15 is performed.
As shown in FIG. 4, the support-provided protective film-forming film 20 includes a support 21 and a curable protective film-forming film 22 provided on the support 21. The support 21 is not particularly limited as long as it is a sheet that can support the curable protective film-forming film 22, but as shown in FIG. 4, the support 21 is provided on one surface of the base 21A and the base 21A. It is preferable that the adhesive layer 21B is provided, and the curable protective film-forming film 22 be bonded on the adhesive layer 21B. The curable protective film-forming film 22 is preferably a thermosetting protective film-forming film that can be cured by heating, but may be curable by means other than heating such as energy rays. In addition, the detail of each member of the protective film formation film 20 with a support is mentioned later.

The protective film-forming film 20 with a support is attached on the side of the curable protective film-forming film 22 to the back surface of the semiconductor wafer 10 divided into a plurality of chips 15, as shown in FIG. In addition, it is preferable that the outer peripheral region surrounding the central region to be attached to the semiconductor wafer 10 (semiconductor chip 15) be attached to the ring frame 25 in the support-attached protective film forming film 20. Thus, the support-equipped protective film-forming film 20 and the plurality of semiconductor chips 15 attached thereon are integrally supported by the ring frame 25.
Thereafter, when the back grind tape 16 is attached to the plurality of chips 15, the back grind tape 16 is peeled off from the plurality of chips 15 (semiconductor wafers 10). In addition, when the adhesive layer for back grind tapes of the back grind tape 16 is formed from an energy ray-curable adhesive, energy rays are applied to the adhesive layer for back grind tapes before peeling off the back grind tape 16. It is preferable to cure by irradiation. In addition, as an energy ray, an ultraviolet ray, an electron beam, etc. are usually used.

  Here, as shown in FIG. 4, the support 21 is preferably larger than the curable protective film-forming film 22 in the surface direction. The support 21 is one size larger, so that the curable protective film-forming film 22 is disposed on the central region thereof, and the peripheral region surrounding the central region is a region where the curable protective film-forming film 22 is not provided. Thus, the outer peripheral area can be easily attached to the ring frame 25. The support 21 is preferably attached to the ring frame 25 via the adhesive layer 21B.

However, as shown in FIG. 8, in the support-attached protective film-forming film 20, the ring frame pressure-sensitive adhesive layer 23 may be provided on the curable protective film-forming film 22. At this time, the curable protective film-forming film 22 is one size larger than the semiconductor wafer 10, and the central area thereof becomes an area to be attached to the semiconductor wafer 10, and a ring-shaped ring frame is formed in the outer peripheral area surrounding the center. An adhesive layer 23 is provided. In this case, the support-attached protective film-forming film 20 is attached to the ring frame 25 via the ring frame pressure-sensitive adhesive layer 23.
The ring frame pressure-sensitive adhesive layer 23 is formed of, for example, a pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, a silicone pressure-sensitive adhesive, a urethane pressure-sensitive adhesive, a polyester pressure-sensitive adhesive, and a polyvinyl ether pressure-sensitive adhesive.

[Curing process]
In the present embodiment, after the attaching process described above, a curing process of curing the curable protective film-forming film 22 to form a protective film 22A is performed.
If the curable protective film-forming film 22 contains a thermosetting component as described later, and is a thermosetting protective film-forming film, the curing step is performed by heating the curable protective film-forming film 22. That is, as shown in FIG. 5, the protective film with support film-forming film 20 to which the plurality of semiconductor chips 15 are attached is preferably conveyed to the inside of the oven 30 in a state of being attached to the ring frame 25 and is inside the oven 30. Heat and cure. The heating in the oven 30 may be performed at a temperature and a heating time at which the curable protective film-forming film 22 can be cured, but the temperature is preferably 70 to 175 ° C., more preferably 80 to 150 ° C. Preferably, it is 30 to 180 minutes, More preferably, it is 60 to 120 minutes.
When the curable protective film-forming film 22 contains an energy ray-curable component that is cured by energy rays, the curing process is performed by irradiating the curable protective film-forming film 22 with energy rays. The energy ray is usually applied to the curable protective film-forming film 22 from the side of the support 21 through the support 21.
In the case where the curable protective film-forming film 22 contains both a thermosetting component and an energy ray curable component as a curable component, the curing step may be performed by combining the above heating and energy beam irradiation. preferable.

[Protective film division process]
After the curing step, as shown in FIG. 6, the protective film 22A attached to the back surface of the singulated semiconductor wafer 10 is cut by a laser along the chip interval and divided into shapes corresponding to the respective chips. Perform a protective film dividing step.
Specifically, the laser light emitted from the laser light source 26 is applied to the protective film 22A from the surface side of the semiconductor chip 15 through the cut 11A. Thus, the shape of the divided protective film 22A corresponds to the shape of the semiconductor chip 15.
The cutting of the protective film 22A does not have to be performed so as to completely cut the protective film 22A, and may be partially cut so that the protective films 22A can be separated in a pick-up step described later.
In order to remove debris and the like generated when the protective film 22A is cut, it is preferable to clean the plurality of chips 15 on the support 21 by a spinner or the like after the protective film 22A is cut.

[Pickup process]
In the present embodiment, a pickup step is usually performed after the protective film division step. In the pick-up step, as shown in FIG. 7, the chip 24 with a protective film formed by laminating the protective film 22A divided into the semiconductor chip 15 on the chip 15 is picked up and peeled off from the support 21. The support 21 may be expanded in the surface direction before picking up so as to be easy to pick up.
The chip 24 with a protective film peeled off from the support 21 bonds the circuit surface on the chip to a chip mounting portion such as a lead frame by a method called face-down method, for example, to obtain a semiconductor device.
As described above, in the present manufacturing method, the pickup step is usually performed after the protective film dividing step, and the protective film dividing step is performed after the curing step. In this case, if the protective film-forming film 20 is a thermosetting protective film-forming film, the thermosetting process is performed in a state where the plurality of semiconductor chips 15 are attached to the protective film-forming film 20 with a support. As a result, the support is deformed by heat and there is a concern that problems such as slack will occur. Then, it is preferable that the base material which comprises a support body has heat resistance. As a base material which has heat resistance, specifically, what has a polyester film or a polypropylene film at least is mentioned so that it may mention later.

[Laser marking process]
Moreover, it is preferable that the manufacturing method of the semiconductor device of this embodiment is equipped with the laser marking process which performs laser marking to film 22 for protective film formation, or protective film 22A. Laser marking is a method of marking by irradiating a laser beam and scraping off the surface of the protective film-forming film 22 or the protective film 22A.
The laser marking may be performed after the curable protective film-forming film 22 is attached to the plurality of semiconductor chips 15 (semiconductor wafers 10), but is preferably performed after the curing step. By performing laser marking on the protective film 22A cured in the curing step, the marked characters, symbols, figures and the like are likely to be clear.

The laser marking is more preferably performed between the curing step and the pickup step. As a result, it becomes possible to perform laser marking collectively on a plurality of chips which are holding and aligning the wafer shape.
It is further preferable that the laser marking be performed between the curing step and the protective film dividing step. Thereby, since the state in which the curable protective film-forming film 22 is connected is maintained at the stage of performing the laser marking, the individual regions in the semiconductor wafer 10 where the division into chips is performed move from the initial position. Therefore, laser marking can be performed with high positional accuracy.
Laser marking is usually performed by irradiating the surface of the protective film 22A or the curable protective film-forming film 22 with a laser beam from the support 21 side through the support 21.

According to the manufacturing method of the present embodiment described above, by performing division of the protective film 22A by laser irradiation after the curing step, when the protective film is divided, the protective film 22A is hardened and the tackiness is already lost. Therefore, debris generated when dividing the protective film 22A is less likely to adhere to the chip. In addition, even if debris adheres to the chip, it can be easily removed by subsequent washing.
Furthermore, since the curable protective film-forming film 22 is cured in a state of being supported by the support 21, the curing is less likely to cause shrinkage, and warpage to chips is also reduced. Further, by adopting the pre-dicing method, since the wafer is divided when the wafer is thinned during back surface grinding, warpage to the wafer is prevented, and warpage to the chip is further reduced.

[Protective film-forming film with support]
Hereinafter, the configuration of each member of the protective film with a support used in the method of manufacturing a semiconductor device and the method of manufacturing the same will be described.

<Base material>
The base 21A of the support 21 used for the protective film-forming film 20 with a support is not limited as long as it is suitable for processing the semiconductor wafer 10, and a resin mainly composed of a resin-based material is usually used. Composed of film.
Specific examples of resin films include polyethylene films such as low density polyethylene (LDPE) films, linear low density polyethylene (LLDPE) films, high density polyethylene (HDPE) films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films , Polyolefin-based films such as ethylene-norbornene copolymer film and norbornene resin film; ethylene-vinyl acetate copolymer film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid ester copolymer Ethylene copolymer films such as films; polyvinyl chloride films such as polyvinyl chloride film, vinyl chloride copolymer film; polyethylene terephthalate film, polybutylene tere Polyester film of tallate films; polyurethane film; polyimide film; polystyrene films; polycarbonate films; and fluorine resin film. In addition, modified films such as these crosslinked films and ionomer films are also used. The substrate may be a film composed of one of these, or may be a laminated film in which two or more of these are combined.
The resin film is a polyethylene terephthalate film, a polybutylene terephthalate or the like from the viewpoint of versatility, the viewpoint of relatively high strength, the viewpoint of preventing the chip from moving in the above-mentioned attaching process, and the heat resistance. Polyester-based films and polypropylene films are preferred. In order to obtain such an effect, it may be a single layer film or a laminated film, as long as the substrate has at least one or more layers selected from the group consisting of polyester films and polypropylene films. In order to facilitate expansion in the pick-up step and also in the pick-up itself, it is particularly preferable that the substrate has a polypropylene film from the viewpoint that the protective film or the like is easily peeled off from the support. preferable. For example, the substrate described in International Publication WO 2013/172328 may be used as a laminated film in which a polypropylene film and another type of film are combined.
The thickness of the substrate 21 is not particularly limited, but is preferably in the range of 20 to 450 μm, more preferably 25 to 400 μm.

<Pressure-sensitive adhesive layer>
The pressure-sensitive adhesive layer 21B of the support 21 used for the protective film-forming film 20 with a support comprises an acrylic pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, a silicone pressure-sensitive adhesive, a urethane pressure-sensitive adhesive, a polyester pressure-sensitive adhesive, and a polyvinyl ether type Although an adhesive etc. can be used, an acrylic adhesive is preferable in these.
An acrylic adhesive contains an acrylic copolymer (a1) as a main component (adhesive main agent), and the acrylic copolymer (a1) may, for example, be a structural unit derived from a functional group-containing monomer and And a structural unit derived from a (meth) acrylic acid ester monomer other than a functional group-containing monomer or a derivative thereof.

The functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) is a monomer having a polymerizable double bond and a functional group such as a hydroxyl group, an amino group, a substituted amino group or an epoxy group in the molecule. Is preferred.
Specific examples of the functional group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate and the like. These may be used alone or in combination of two or more.

  As a (meth) acrylic acid ester monomer which comprises an acryl-type copolymer (a1), the carbon number of the alkyl group is 1-20, and the alkyl (meth) acrylate, cycloalkyl (meth) acrylate, benzyl (meth) acrylate which is 1-20 Is used. Among these, particularly preferred are alkyl (meth) acrylates in which the alkyl group has 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate And 2-ethylhexyl (meth) acrylate are used.

The acrylic copolymer (a1) usually contains 3 to 50% by mass, preferably 5 to 35% by mass of constituent units derived from the functional group-containing monomer, and (meth) acrylic acid ester monomer or its monomer The structural unit derived from the derivative is usually contained in a proportion of 40 to 97% by mass, preferably 60 to 95% by mass.
The acrylic copolymer (a1) is derived from other monomers such as dimethyl acrylamide, vinyl formate, vinyl acetate, styrene, etc., in addition to the above-mentioned functional group-containing monomers and structural units derived from (meth) acrylic acid ester monomers or their derivatives. It may have a constituent unit of

The pressure-sensitive adhesive layer may be made of a material obtained by curing an energy ray-curable pressure-sensitive adhesive such as an ultraviolet ray-curable or electron beam-curable type. As the energy ray-curable pressure-sensitive adhesive, a so-called internal energy ray-curable pressure-sensitive adhesive using an acrylic copolymer or the like having a radical reactive carbon-carbon double bond in the molecule as the main component (adhesive main agent) It can be mentioned. The intrinsic energy ray-curable pressure-sensitive adhesive includes, for example, the above-mentioned acrylic copolymer (a1), a substituent bonded to a functional group of the acrylic copolymer (a1), and a radical reactive carbon-carbon double bond. It is obtained by reacting an unsaturated group-containing compound having a bond.
In addition, the energy ray-curable pressure-sensitive adhesive is mainly a mixture of a polymer component having no energy ray-curable property such as the above-mentioned acrylic copolymer (a1) and an energy ray-curable polyfunctional monomer and / or oligomer. It may be a so-called addition type energy ray-curable pressure-sensitive adhesive as a component. As the energy ray-curable polyfunctional monomer and / or oligomer, for example, an ester of polyhydric alcohol with (meth) acrylic acid can be used.
In addition to the pressure-sensitive adhesive such as an acrylic copolymer, the pressure-sensitive adhesive may further contain a crosslinking agent, a photopolymerization initiator, and the like as required. As a crosslinking agent, a polyfunctional compound having reactivity with a functional group contained in a polymer (adhesive main agent) such as an acrylic copolymer can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts And reactive phenol resins.
The thickness of the pressure-sensitive adhesive layer is not particularly limited, but is preferably about 1 to 50 μm, and more preferably 2 to 30 μm.
However, the support 21 is not limited to the above-described configuration as long as it is capable of supporting the curable protective film-forming film 22 and can support the film 22. For example, the pressure-sensitive adhesive layer may be omitted. In this case, in order to adjust the releasability between the thermosetting protective film-forming film 22 and the support 21, the support 21 may have, for example, a layer formed of a silicone release agent or the like.

<Curable protective film formation film>
The curable protective film-forming film 22 preferably comprises an uncured curable adhesive. The curable protective film-forming film 22 is adhered to the semiconductor wafer 10 (semiconductor chip 15) and then cured, whereby the protective film 22A can be firmly adhered to the semiconductor wafer 10, and a protective film excellent in durability is obtained. 22A can be formed on the chip 15.
The curable protective film-forming film 22 preferably has adhesiveness at normal temperature or exhibits adhesiveness by heating. Thus, the semiconductor wafer 10 (semiconductor chip 15) can be easily attached. As the curable component, for example, a thermosetting component, an energy ray curable component, or a mixture thereof can be used, but in consideration of the curing method of the curable protective film-forming film 22 and the heat resistance after curing, It is preferred to use a thermosetting component. The curable adhesive more preferably contains a thermosetting component and a binder polymer component.

  Examples of the thermosetting component include epoxy resin, phenol resin, melamine resin, urea resin, polyester resin, urethane resin, acrylic resin, polyimide resin, benzoxazine resin and the like, and mixtures thereof. Among these, epoxy resins, phenol resins and mixtures thereof are preferably used.

Epoxy resins have the property of being three-dimensional reticulated when heated and forming a strong film. As such an epoxy resin, conventionally known various epoxy resins are used, but in general, those having a molecular weight of about 300 to 2,000 are preferable, and those having a molecular weight of 300 to 500 are particularly preferable. Furthermore, it is preferable to use in the form which blended the epoxy resin of the normal liquid state of the molecular weight 330-400, and the epoxy resin of the molecular weight 400-2500, especially the solid epoxy resin at the normal temperature of 500-2000. Moreover, it is preferable that the epoxy equivalent of an epoxy resin is 50-5000 g / eq.
Specific examples of such an epoxy resin include: glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, polypropylene glycol; Glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid and tetrahydrophthalic acid; glycidyl type or alkyl glycidyl type epoxy resins in which active hydrogen bonded to a nitrogen atom such as aniline isocyanurate is substituted with glycidyl group; vinylcyclohexane diepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-) As the epoxy) cyclohexane -m- dioxane, carbon in the molecule - epoxy is introduced by for example oxidation to carbon double bond include a so-called alicyclic epoxides. In addition, an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton or the like can also be used.
Among these, bisphenol-based glycidyl type epoxy resin, o-cresol novolac type epoxy resin and phenol novolac type epoxy resin are preferably used. These epoxy resins can be used singly or in combination of two or more.

  When using an epoxy resin as a thermosetting component, it is preferable to use a heat activation type latent epoxy resin curing agent in combination as an auxiliary. The thermally activated latent epoxy resin curing agent is a type of curing agent that does not react with the epoxy resin at room temperature, is activated by heating above a certain temperature, and reacts with the epoxy resin. In the method of activating the thermally activated latent epoxy resin curing agent, a method of generating active species (anion, cation) by a chemical reaction by heating; stably dispersed in the epoxy resin at around room temperature, and the epoxy resin at high temperature There is a method of starting the curing reaction by dissolving and dissolving and starting the curing reaction; eluting at a high temperature with a curing agent of molecular sieve encapsulation type to start the curing reaction;

  Specific examples of the thermally activated latent epoxy resin curing agent include various onium salts, and high-melting point active hydrogen compounds such as dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, and imidazole compounds. These heat-activated latent epoxy resin curing agents can be used alone or in combination of two or more. The heat-activated latent epoxy resin curing agent as described above is preferably 0.1 to 20 parts by weight, particularly preferably 0.2 to 10 parts by weight, more preferably 0. It is used in the ratio of 3 to 5 parts by weight.

As a phenol resin, condensation products of phenols such as alkylphenols, polyhydric phenols, naphthols and the like with aldehydes are used without particular limitation. Specifically, phenol novolac resin, o-cresol novolac resin, p-cresol novolac resin, t-butylphenol novolac resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A novolac resin, or modified products thereof Etc. are used.
The phenolic hydroxyl group contained in these phenolic resins can be easily added to the epoxy group of the above epoxy resin by heating to form a cured product having high impact resistance. For this reason, an epoxy resin and a phenol resin may be used in combination.

  As the energy ray curable component, for example, a photopolymerization initiator and a chain transfer agent are optionally combined with the compound disclosed as the ultraviolet polymerizable compound of the film for protective film formation in JP-A-2012-207179. Can be used.

  The binder polymer component can impart appropriate tack to the curable protective film-forming film 22 and can improve the operability of the support-carrying protective film-forming film 20. The weight average molecular weight of the binder polymer is usually in the range of 50,000 to 2,000,000, preferably 100,000 to 1.5,000,000, and particularly preferably 200,000 to 1,000,000. If the molecular weight is too low, the film formation of the curable protective film-forming film 22 will be insufficient. If it is too high, the compatibility with other components will deteriorate, and as a result, uniform film formation will be hindered. As such a binder polymer, for example, an acrylic polymer, a polyester resin, a phenoxy resin, a urethane resin, a silicone resin, a rubber polymer and the like are used, and in particular, an acrylic polymer is preferably used.

  As an acryl-type polymer, the (meth) acrylic acid ester copolymer which consists of a structural unit derived | led-out from a (meth) acrylic acid derivative is mentioned, for example. Here, (meth) acrylic acid derivatives include (meth) acrylic acid itself as well as (meth) acrylic ester monomers. In addition, the (meth) acrylic acid ester copolymer contains the structural unit derived from the (meth) acrylic acid ester monomer. As the (meth) acrylic acid ester monomer, (meth) acrylic acid alkyl ester having preferably 1 to 18 carbon atoms in the alkyl group, such as methyl (meth) acrylate, ethyl (meth) acrylate, (meth) acrylic acid Propyl acid, butyl (meth) acrylate and the like are used. Moreover, the (meth) acrylic acid ester monomer etc. which have epoxy groups and hydroxyl groups, such as glycidyl (meth) acrylate and hydroxyethyl (meth) acrylate, can be mentioned.

Among the above, when a glycidyl group is introduced into the acrylic polymer using glycidyl methacrylate or the like as a structural unit, the compatibility with the epoxy resin as the thermosetting component described above is improved, and the curable protective film-forming film 22 is cured. The later glass transition temperature (Tg) is increased, and the heat resistance is improved. Further, among the above, when a hydroxyl group is introduced into the acrylic polymer using hydroxyethyl acrylate or the like as a structural unit, the adhesion to the semiconductor chip and the adhesion property can be controlled.
When an acrylic polymer is used as the binder polymer, the weight average molecular weight of the polymer is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. The glass transition temperature of the acrylic polymer is usually 30 ° C. or less, preferably about −70 to 10 ° C.

  The compounding ratio of the thermosetting component to the binder polymer component is preferably 50 to 1500 parts by weight, particularly preferably 70 to 1000 parts by weight, and more preferably 50 parts to 1500 parts by weight of the thermosetting component to 100 parts by weight of the binder polymer component. It is preferable to mix | blend 80-800 weight part. When the thermosetting component and the binder polymer component are compounded in such a proportion, suitable tackiness can be exhibited before curing, and the sticking operation can be stably performed, and after curing, protection excellent in film strength A membrane is obtained.

The curable protective film-forming film 22 may contain at least one of a colorant and a filler. As a result, the light transmittance of the protective film 22A is controlled to a desired range, and laser printing with excellent visibility is enabled.
Moreover, when the curable protective film-forming film 22 contains a filler, the hardness of the protective film 22A after curing can be maintained high, and the moisture resistance can be improved. Furthermore, the thermal expansion coefficient of the protective film 22A after curing can be made close to the thermal expansion coefficient of the semiconductor chip 15, which makes it possible to further reduce the warpage of the semiconductor chip 15.

As the colorant, known pigments such as inorganic pigments, organic pigments and organic dyes can be used, but it is preferable to use organic pigments or organic dyes.
Examples of inorganic pigments include carbon black, cobalt dyes, iron dyes, chromium dyes, titanium dyes, vanadium dyes, zirconium dyes, molybdenum dyes, ruthenium dyes, platinum dyes, ITO (indium Tin oxide dyes, ATO (antimony tin oxide) dyes, etc. may be mentioned.

  Examples of organic pigments and organic dyes include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squalium dyes, azulenium dyes, polymethine dyes, naphthoquinone dyes, pyrilium dyes, and phthalocyanine dyes. Dyes, naphthalocyanine dyes, naphtholactam dyes, azo dyes, condensed azo dyes, indigo dyes, perinone dyes, perylene dyes, dioxazine dyes, quinacridone dyes, isoindolinone dyes, quinophthalone dyes, Pyrrole dyes, thioindigo dyes, metal complex dyes (metal complex dyes), dithiol metal complex dyes, indolephenol dyes, triallylmethane dyes, anthraquinone dyes, dioxazine dyes, naphthol dyes, azomethine dyes , B Zuimidazoron based dyes, pyranthrone pigments and threne color like. These pigments or dyes can be appropriately mixed and used in order to adjust to the target light transmittance.

  Among these, it is preferable to use a pigment, particularly an inorganic pigment, and among inorganic pigments, carbon black is particularly preferable. Carbon black is usually black, and the difference in contrast between the portion where the concave portion is formed and the portion where the concave portion is not formed is large by the laser light irradiation, so the visibility of the laser printed portion is very excellent.

Examples of the filler include silica such as crystalline silica, fused silica and synthetic silica, and inorganic fillers such as alumina and a glass balloon. Among them, synthetic silica is preferable, and in particular, synthetic silica of a type in which a source of alpha rays which causes malfunction of a semiconductor device is eliminated as much as possible is optimum. The shape of the filler may be spherical, needle-like or amorphous.
Moreover, as a filler added to the curable protective film formation film 22, the functional filler may be mix | blended besides the said inorganic filler. As the functional filler, for example, a conductive filler in which gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramic, nickel, aluminum or the like is coated with silver for the purpose of imparting conductivity after die bonding And metal materials such as gold, silver, copper, nickel, aluminum, stainless steel and alloys thereof, oxides or nitrides of these metal materials, nonmetals such as silicon and germanium, and the like for the purpose of imparting thermal conductivity. And thermally conductive fillers such as non-metallic nitrides such as boron.

  The blending amount of the colorant is usually preferably 0.001 to 5% by mass, particularly preferably 0.01 to 3% by mass, and further preferably 0.1 to 2.5% by mass. Is preferred. In addition, the blending amount of the filler is usually preferably 40 to 80% by mass, and particularly preferably 50 to 70% by mass.

  The curable protective film-forming film 22 may contain a coupling agent. By containing a coupling agent, after the curing of the curable protective film-forming film 22, the adhesiveness and adhesion between the protective film 22A and the chip 15 can be improved without impairing the heat resistance of the protective film 22A. While being able to be done, it is possible to improve the water resistance (wet heat resistance). As a coupling agent, a silane coupling agent is preferable in view of its versatility and cost merit.

  As a silane coupling agent, for example, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- (methacryloxy) Propyl) trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N -Phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, methyltri Methoxysilane Methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazole silane and the like. These can be used individually by 1 type or in mixture of 2 or more types.

  The curable protective film-forming film 22 may contain a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, and an organic metal chelate compound in order to adjust the cohesion before curing. In addition, the curable protective film-forming film 22 may contain an antistatic agent in order to suppress static electricity and to improve the reliability of the chip. Furthermore, the curable protective film-forming film 22 may contain a flame retardant such as a phosphoric acid compound, a brominated compound, or a phosphorus compound in order to enhance the flame retardant performance of the protective film and improve the reliability as a package. Good.

  The thickness of the curable protective film-forming film 22 is preferably 3 to 300 μm, particularly preferably 5 to 250 μm, and further preferably 7 to 200 μm in order to effectively exhibit the function as a protective film. Is preferred.

  The support-formed protective film-forming film 20 may be protected by a release sheet before its use. The release sheet is laminated on the surface of the curable protective film-forming film 22 opposite to the surface on the support 21 side, and the curable protective film-forming film 22 exposed to the outside, the adhesive layer 21 B, etc. Protect. The release sheet is, for example, one obtained by release-treating a plastic film with a release agent or the like. The release sheet is to be removed before the support-attached protective film-forming film 20 is attached to the semiconductor chip 15 (semiconductor wafer 10).

[Preparation of a protective film-forming film with a support]
The protective film-forming film 20 with a support can be produced by producing a protective film-forming film laminate and a support and bonding them together.

<Production of protective film-forming film laminate>
The protective film-forming film laminate is produced, for example, as follows.
The coating liquid for protective film formation film which mixes each component which comprises the said curable protective film formation film in a suitable solvent in an appropriate ratio or without a solvent is apply-dried on a 1st peeling sheet. Forming a curable protective film-forming film on the first release sheet. Then, a second release sheet is further attached to the curable protective film-forming film, and a protective film-forming film is laminated having a three-layer structure of first release sheet / curable protective film-forming film / second release sheet. Get the body. The protective film-forming film laminate may be stored, transported, etc. as a wound and wound body as appropriate. In the above steps, the step of attaching the second release sheet may be omitted, and the protective film-forming film may be left exposed.

<Preparation of support>
Hereinafter, a method for producing a support in the case where the support includes the base and the pressure-sensitive adhesive layer provided on one surface of the base will be described.
A coating solution for the pressure-sensitive adhesive layer, which is prepared by mixing the components constituting the pressure-sensitive adhesive layer in appropriate proportions in an appropriate solvent or in the absence of a solvent, is applied onto a release sheet and dried. A pressure-sensitive adhesive layer is formed, and then a substrate is attached to the pressure-sensitive adhesive layer to obtain a release sheet-attached support. The release sheet-attached support may be stored, transported, etc., as a winding and winding member, as appropriate.
Also, instead of applying the pressure-sensitive adhesive layer coating solution onto the release sheet, the composition is directly applied to the substrate to form the pressure-sensitive adhesive layer, and then a release sheet is further attached to the pressure-sensitive adhesive layer to attach a release sheet. It may be a support. However, the step of bonding the release sheet may be omitted and the pressure-sensitive adhesive layer may remain exposed.
Here, when the pressure-sensitive adhesive layer provided on the base material is an energy ray-curable pressure-sensitive adhesive, the pressure-sensitive adhesive is irradiated with energy rays before being bonded to the curable protective film-forming film. After bonding to the thermosetting protective film-forming film, energy rays may be irradiated to cure. In the case where the adhesive is irradiated with an energy ray after being bonded to the thermosetting protective film-forming film, the energy ray may be irradiated at any stage of the above-mentioned sticking process to the pickup process. In curing of the pressure-sensitive adhesive by energy beam irradiation, at least a portion in contact with the curable protective film-forming film may be cured.

<Pasting>
Then, while peeling off one release sheet (for example, 2nd release sheet) from a protective film formation film laminated body as needed, a release sheet is peeled from a support with a release sheet as needed, and A film for forming a curable protective film is bonded to the pressure-sensitive adhesive layer surface to prepare a support-formed protective film-forming film.

<Die cutting>
In addition, you may bond together to a support body, after giving the said protective film formation film laminated body to die-cutting process as needed.
In the die-cutting process, for example, the protective film-forming film laminate is cut into one release sheet (for example, a second release sheet) and a curable protective film-forming film, for example, the same size or one size larger than the wafer It is carried out by half-cutting in a circle, and then removing the one release sheet and the curable protective film-forming film that are present outside the half-cut circle. Similarly, the support may be appropriately cut and its shape may be appropriately adjusted.

  Further, as shown in FIG. 8, also in the case of providing a pressure-sensitive adhesive layer for ring frame, a protective film with a support can be prepared in the same manner, but it is laminated to a support of a curable protective film. The ring frame pressure-sensitive adhesive layer may be appropriately formed on the surface opposite to the surface.

  EXAMPLES Hereinafter, the present invention will be more specifically described by way of examples, but the scope of the present invention is not limited to these examples.

The method of manufacturing the semiconductor device in the example and the comparative example was evaluated by the following method.
<Debris adhesion evaluation>
The amount of deposit on the chip surface at the chip peripheral portion within 100 μm from the cut line after the protective film dividing step was observed with a microscope. Observe the chip peripheral part on both sides of one cut line with a length of 10 chips, and if there is no deposit with a diameter of 10 μm or more, A, if there are deposits, B, if 10 or more, 10 or more The case was evaluated as C.
<Laser printability>
The visibility of the laser-printed characters formed on the protective film through the support was evaluated as if visually observed based on the criteria shown below.
A: I was able to read the characters without any problems.
C: There was a blurred portion, and there was a portion where the characters could not be read.

Example 1
(1) Preparation of Protective Film-Forming Film Laminate First, the following components (a) to (f) are mixed, diluted with methyl ethyl ketone so that the solid content concentration is 61 mass%, and applied for protective film forming film I got a liquid.
(A) Binder polymer: 100 parts by weight of (meth) acrylic acid ester copolymer copolymerized with 10 parts by weight of n-butyl acrylate, 70 parts by weight of methyl acrylate, 5 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate (Solid content conversion, the same below); weight average molecular weight: 800,000, glass transition temperature: -1 ° C
(B) Thermosetting component: Bisphenol A epoxy resin (Mitsubishi Chemical Corporation, jER 828, epoxy equivalent 184 to 194 g / eq) 60 parts by mass, bisphenol A epoxy resin (Mitsubishi Chemical Corporation, jER 1055, epoxy equivalent) 10 parts by mass of 800-900 g / eq), and 30 parts by mass of dicyclopentadiene type epoxy resin (manufactured by Dainippon Ink and Chemicals, Inc., Epiclon HP-7200 HH, epoxy equivalent 255-260 g / eq) (c) thermal activity latent Epoxy resin curing agent: 2 parts by mass of dicyandiamide (ADEKA Co., Ltd., Adeka Hardener EH-3636AS, active hydrogen content: 21 g / eq), and 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., Cuazole) 2 PHZ) 2 parts by mass (d) arrived Agent: Carbon black (Mitsubishi Chemical Co., Ltd., #MA 650, average particle diameter 28 nm) 0.6 parts by mass (e) Filler: Silica filler (ADMATEX, SC 2050 MA, average particle diameter 0.5 μm) 320 parts by mass ( f) Silane coupling agent: γ-glycidoxypropyl trimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd .: KBM-403, methoxy equivalent: 12.7 mmol / g, molecular weight: 236.3) 0.4 parts by mass

  The coating solution for forming a protective film is applied on the release-treated surface of a first release sheet (Lintech Co., Ltd., SP-PET 3811, thickness 38 μm), dried in an oven at 120 ° C. for 2 minutes, A curable protective film was formed on the first release sheet. The thickness of the thermosetting protective film-forming film formed was 25 μm. A release-treated surface of a second release sheet (Lintech Co., Ltd., SP-PET 381031, thickness 38 μm) is attached to this curable protective film-forming film, and the first release sheet / curable protective film-forming film / first The protective film formation film laminated body which consists of 3 layer structure of the peeling sheet of 2 was obtained. This laminate was long and was wound into a wound body.

  The wound body of the long protective film-forming film laminate obtained above was cut into 300 mm in the width direction. Next, the protective film-forming film laminate has a circular shape with a diameter of 220 mm at the center in the width direction of the laminate so that the second release sheet and the curable protective film-forming film are cut from the second release sheet side. Half-cuts were applied continuously. Thereafter, the second release sheet and the curable protective film-forming film present outside the half-cut circular shape were removed. As a result, the protective film-forming film laminate has a circular curable protective film-forming film and a circular second peeling sheet laminated on the peeling surface of the first peeling sheet.

(2) Preparation of Support First, the components (g) and (h) were mixed and diluted with methyl ethyl ketone so that the solid content concentration was 30% by mass, to prepare a coating agent for an adhesive layer.
(G) Adhesive main agent: (meth) acrylic acid ester copolymer (copolymer obtained by copolymerizing 40 parts by mass of butyl acrylate, 55 parts by mass of 2-ethylhexyl acrylate, and 5 parts by mass of 2-hydroxyethyl acrylate Weight average molecular weight: 600,000) 100 parts by mass (h) Crosslinking agent: 10 parts by mass of aromatic polyisocyanate compound (manufactured by Mitsui Chemicals, Inc., Takenate D110N)

  On the release surface of a release sheet (Lintech Co., Ltd .: SP-PET 381031), the above-mentioned coating agent for an adhesive layer was applied by a knife coater and dried to form an adhesive layer. The thickness of the formed pressure-sensitive adhesive layer was 10 μm. Then, the base material which consists of a 100-micrometer-thick polypropylene film (The Mitsubishi resin Co., Ltd. make, brand name "CT265") was bonded to the adhesive layer, and the support body with a peeling sheet was obtained. The release sheet-attached support was long, wound up into a wound body, and then cut in the width direction of 300 mm.

(3) Preparation of Protective Film-Forming Film with Support The circular second release sheet was peeled off from the protective film-forming film laminate obtained in the above (1) to expose the circular curable protective film-forming film . On the other hand, the release sheet was released from the release sheet-provided support obtained in the above (2) to expose the pressure-sensitive adhesive layer. A support is pasted together to a protective film formation film layered product so that the above-mentioned hardenability protective film formation film may contact the pressure sensitive adhesive layer, and a support which protected the curable protective film formation film side by the 1st exfoliation sheet A protective film-forming film was obtained.
A support is formed by cutting a base material and an adhesive layer from the substrate side of the obtained protective film with a support, and a curable protective film with a diameter of 220 mm is laminated on a support with a diameter of 270 mm. It was set as a body-formed protective film formation film. However, the protective film-forming film with a support is such that the curable protective film-forming film side is protected by the first release sheet.

(4) Preparation of Protective Film-Coated Chip Next, using the above-described protective film with a support, the following steps were sequentially performed to prepare a protective film-coated chip.
Groove formation process: Using a dicer DFD6361 manufactured by DISCO Corporation, a half-cut is performed on a wafer 10 having a thickness of 10 μm and a polyimide film (organic film 13) having a thickness of 10 μm to form a groove 11 having a depth of 180 μm. (See Figure 1).
Chip singulation step: Next, a back grind tape 16 (Adwill E-3125 manufactured by Lintec Co., Ltd.) is attached to the surface of the wafer 10 using a laminator RAD-3510 F / 12 manufactured by Lintec Co., Ltd. The wafer 10 was ground from the back side to a thickness of 150 μm using a grinder DFG 8760 manufactured by DISCO Corporation, and the wafer 10 was singulated into a plurality of chips 15 (see FIGS. 2 and 3).
Sticking step: On the back surface of the wafer 10 divided into chips 15, using the mounter RAD-2700F / 12 manufactured by Lintec Co., Ltd., the support-formed protective film-forming film 20 from which the first release sheet was peeled was subjected to temperature 70 It stuck at ° C. Under the present circumstances, the ring frame 25 was stuck on the outer periphery area | region of the protective film formation film 20 with a support body (refer FIG. 4). Thereafter, UV irradiation was performed on the back grind tape 16 under the condition of 500 mJ / cm ² to cure the back grind tape pressure-sensitive adhesive layer, and then the back grind tape 16 was peeled off.
Curing step: Next, the support-provided protective film-forming film 20 to which the plurality of chips 15 and the ring frame 25 are attached is left inside the oven 30 at 130 ° C. for 2 hours, and the curable protective film-forming film 22 is obtained. It was cured to form a protective film 22A (see FIG. 5).
Laser marking process: Using a printing apparatus (MD-T1000, manufactured by KEYENCE CORPORATION), a laser beam having a wavelength of 532 nm was irradiated from the support 21 side through the support 21 to perform laser printing on the protective film. At this time, the character size was 0.4 mm × 0.5 mm, the character spacing was 0.3 mm, the number of characters was 20, and the characters were printed as alphabets of A, B, C,.
Protective film division step: Thereafter, the protective film 22A exposed between the chips 15 is cut with a laser using a laser dicer DFL7160 manufactured by DISCO Co., Ltd. to divide the protective film 22A, and then it is washed with a spinner (see FIG. 6).
Pick-up step: Next, each chip 24 with a protective film on which the divided protective film 22A is laminated on the back surface is picked up using a die bonder BESTEM D02 manufactured by Canon Machinery Co., Ltd. and peeled off from the support 21 (see FIG. 7). The chip size of the obtained chip with a protective film 24 was 1 mm in width and 20 mm in length.

Example 2
By replacing the order of carrying out the curing step and the laser marking step, a chip with a protective film was produced in the same manner as in Example 1 except that laser marking was carried out before the curing step.

Comparative Example 1
The curing step was carried out after the protective film dividing step, and a chip with a protective film was produced in the same manner as in Example 1 except that the laser marking was not carried out.

Each said Example and comparative example were evaluated based on the said evaluation method. The results are shown in Table 1.

  As is clear from the comparison between the above Examples and Comparative Examples, if the protective film is divided by laser irradiation after curing of the curable protective film-forming film, debris generated by the laser division is hard to adhere to the semiconductor chip became. Further, as is clear from the comparison of Examples 1 and 2, when the curable protective film-forming film was cured, laser marking was performed, whereby the laser printability could be improved.

DESCRIPTION OF SYMBOLS 10 semiconductor wafer 11 groove 11A notch 12 circuit 13 organic film 15 semiconductor chip 16 back grind tape 20 protective film forming film with support 21 substrate 21 A base 21 B pressure sensitive adhesive layer 22 curable protective film forming film 22 A protective film 23 ring frame Adhesive layer 24 Tip with protection film 25 Ring frame 30 Oven

Claims (7)

A groove forming step of forming a groove from the surface side of the semiconductor wafer;
A chip singulation step of grinding the semiconductor wafer from the back surface side to the groove and singulating into a plurality of chips;
The thermosetting protective film forming film side of the support with protective film forming film thermosetting protective film forming film is provided on a support, and a sticking step of sticking the back surface of the semiconductor wafer which is singulated ,
Curing the thermosetting protective film-forming film of the protective film-forming film with a support attached to the semiconductor wafer to form a protective film;
After the curing step, a protective film dividing step of cutting the protective film attached to the back surface of the semiconductor wafer with a laser along chip intervals and dividing it into a shape corresponding to each chip ;
A pickup step of picking up the protective film-attached chip having the protective film laminated on the chip after the protective film dividing step, and peeling the chip from the support;
And a method of manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 1, wherein the support has a substrate, and the substrate has at least one layer of one film selected from the group consisting of a polyester film and a polypropylene film. The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting protective film-forming film contains an epoxy resin as a thermosetting component. The method for manufacturing a semiconductor device according to any one of claims 1 to 3 , wherein the protective film is subjected to laser marking after the curing step. The method for manufacturing a semiconductor device according to claim 4, wherein laser marking is performed on the protective film between the curing step and the pickup step. The method for manufacturing a semiconductor device according to claim 4 , wherein the laser marking is performed between the curing step and the protective film division step. The method of manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the chip is cleaned after the protective film dividing step.