JP4690697B2 - Manufacturing method of semiconductor chip - Google Patents

Description

The present invention relates to a method of manufacturing a semiconductor chip dividing singulated die bond sheet with c d c into chips by dicing before grinding and laser dicing.

  In recent years, the need for miniaturization of mounted components has further increased, and the miniaturization technology for semiconductor packaging has been evolving. As a result, semiconductor chips are also required to be made thinner and smaller, and at the same time, technical needs for compact packaging of these thin and small semiconductor chips will continue to increase. Conventionally, these semiconductor chips are obtained by forming a semiconductor wafer that has been ground and thinned in the back grinding process into a chip in the dicing process. Further, a necessary amount of a liquid adhesive is applied to a continuously flowing lead frame for each die bonding by a pick-up die bonder or the like, and the resulting semiconductor chip is die-bonded at that position.

Among these steps, in a dicing step (see FIG. 8), a dicing tape 6 is bonded to a semiconductor wafer (hereinafter sometimes simply referred to as a wafer) 1 and fixed to a chuck table 7 of a dicer with a ring frame 3, The wafer 1 is cut by the dicing blade 2. At this time, the wafer 1 is subjected to cutting resistance by the blade 2, so that a small chip or crack ( Hereinafter, chipping) may occur. This occurrence of chipping has recently been regarded as one of the important problems, and various studies have been made to reduce chipping so far, but there is still no satisfactory means.
Furthermore, this chipping tends to occur as the thickness of the wafer 1 decreases, and the allowable level of chipping becomes stricter with a small chip. Therefore, as described above, as the tendency of the semiconductor chip to become thinner and smaller is further advanced, it is easily assumed that this chipping problem will become more serious in the future.

Furthermore, as shown in FIG. 9, the thin film / small chip semiconductor chip 1 ′ is required to be compactly packaged while preventing chipping. This comes from the need for a smaller package size, and it is desired that the package is desirably packaged in approximately the same size as the semiconductor chip. Usually, the semiconductor chip 1 'formed into a chip is die-bonded to the die pad 10 of the lead frame 11 to which the liquid adhesive 8 is applied by a pick-up die bonder or the like. The required application amount is very difficult to control, and furthermore, since it is liquid, the dimensions when applied on the die pad 10 tend to vary.
In this case, the size of the semiconductor chip 1 'and the size of the liquid adhesive 8 are not matched. Therefore, in packaging, the size of the semiconductor chip 1' is considered to be slightly larger than the size of the semiconductor chip 1 'in consideration of the difference between the two dimensions. Must be packaged. As described above, this is not a desirable method because it needs to be packaged with a size almost the same as the size of the semiconductor chip.

On the other hand, there is a method of using a die bond sheet (sheet-like adhesive) as an adhesive for die bonding.
As a method of using this die bond sheet, there is a widely known method in which a small piece of a die bond sheet having the same dimensions as a semiconductor chip is prepared and mounted in advance on a lead frame, or attached to the back surface of each chip one by one. It has been. However, in this case, the work is very complicated and undesirable, and in addition, a minute shift may occur when a small piece of the die bond sheet is attached to the lead frame or the back surface of the chip, which is desirable for these reasons. It's not a method.

Further, as shown in FIG. 10, a die bond sheet 12 is bonded in advance to the back surface of the semiconductor wafer 1, which is then bonded to a dicing tape 6, and supported and fixed to the chuck table 7 of the dicer by the ring frame 3. There is a method in which the semiconductor wafer 1 and the die bond sheet 12 are simultaneously fully cut by a cut dicing apparatus.
In this system, it is possible to create a state in which the diced chip 1 ′ and the die bond sheet piece 12 ′ have the same dimensions and are bonded together without any deviation. However, in this case, not only the dicing tape 6 but also the die bond sheet 12 is interposed between the two below the semiconductor wafer 1, so that the cutting resistance applied from the blade 2 during dicing causes the wafer 1 or the chip 1 'to move. Compared to the case where there is no die bond sheet 12, it becomes easier to cause blurring, so that chipping is likely to occur remarkably, and this is a problem.

There has been proposed a method for solving the above-described requirements for preventing chipping and compact packaging (for example, see Patent Document 1).
What is proposed here is that after forming grooves with a depth of cut shallower than the wafer thickness along the scribe line of the semiconductor wafer, the back surface of the wafer is ground while the pattern surface is protected with a protective tape, and the wafer thickness is The dicing die bond sheet consisting of a base material and an adhesive layer (die bond sheet) formed on the ground surface is attached to the ground surface, and the protective tape is peeled off. In this method, the adhesive layer exposed between the chips is cut using a dicing blade, and the chip and the adhesive layer are peeled off from the substrate.
In this method, since the chips are individually divided by backside grinding in the back grinding process, it can be said that this method has a certain effect in preventing the occurrence of chipping.
Japanese Patent Application Laid-Open No. 2001-156027

However, in this method, when the adhesive layer exposed between the chips is cut using a dicing blade as shown in FIG. 11 (a), the groove between the chips and the dicing blade are accurately aligned. Is very difficult, and there is a high possibility that chipping will occur due to the blade contacting the side surface of the chip as shown in FIG.
The width of the dicing blade used in cutting the adhesive layer is narrower than the groove width between the chips, and the dicing blade width is preferably about 30 to 90% of the groove width between the chips. In this case, the adhesive layer piece formed on the back surface of the chip often becomes larger than the size of the chip (FIGS. 12 and 13).
Therefore, it cannot be said that it is a satisfactory means considering the necessity of packaging with the same size as the size of the semiconductor chip. Therefore, the object of the present invention is to provide an adhesive that satisfies both the prevention of chipping and the requirement of a compact package. It is to provide a method for manufacturing a thin film / small chip .

As a result of intensive studies in view of the above problems, the present inventors have found that the following production method is suitable for the purpose.
That is, the present invention
(1) (a) a step of grooving a portion corresponding to a penetration portion on the surface of the semiconductor wafer substrate in advance to the depth of the final product of the semiconductor wafer or deeper than that; and (b) the grooved semiconductor wafer. A step of bonding a protective adhesive tape to the substrate surface, (c) a step of thinning the semiconductor wafer substrate to a thickness through which a previously grooved portion penetrates, and (d) a back surface grinding of the semiconductor wafer substrate A step of bonding a die-bonding sheet to the back surface of the semiconductor wafer substrate while the protective adhesive tape is bonded after the processing is completed; and (de1) an ultraviolet ray that is cured on the substrate film by irradiation with ultraviolet rays. A step of bonding a dicing tape on which a pressure-sensitive adhesive layer made of a curable pressure-sensitive adhesive is formed, and (de2) a substrate film side of the dicing tape A step of curing the pressure-sensitive adhesive layer by irradiating ultraviolet rays; and (e) cutting the die-bond sheet by irradiating the die-bonding sheet and the cured pressure-sensitive adhesive layer with a laser along the penetrating portion of the semiconductor wafer. A process for producing a semiconductor chip with an adhesive,
(2) (c) In the step of thinning the semiconductor wafer substrate to a thickness through which the previously grooved portion penetrates, the back surface of the semiconductor wafer substrate is ground and then dry-etched. The method for manufacturing a semiconductor chip with an adhesive according to (1) , wherein the thickness is a predetermined thickness,
(3) In the step (e), laser light is irradiated from the dicing tape side, and the method for producing a semiconductor chip with an adhesive according to (1) or (2) , and
(4) At least the base film of the dicing tape transmits an irradiated laser, and the die bond sheet, the adhesive layer, or the adhesive layer is cut by the laser ( 1) to (3), the method for producing a semiconductor chip according to any one of
Is to provide.

According to the manufacturing method of the present invention, the groove is cut in advance, the cutting resistance of the blade is small during dicing, and chipping is difficult to occur, and the cutting of the adhesive layer after grinding is by laser irradiation. The alignment between the groove and the laser is accurate and easy, chipping is unlikely to occur, and a chip with an adhesive layer having the same dimensions as the chip can be easily obtained.
Therefore, by adopting the method of the present invention, it is possible to achieve both the prevention of chipping and the demand for a compact package .

A preferred embodiment of a method for manufacturing a semiconductor chip of the present invention and a die bond dicing tape used therefor will be described with reference to the accompanying drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same element and the overlapping description is abbreviate | omitted.
The method of the present invention is a method for manufacturing a semiconductor chip with an adhesive including the following steps.
(A) First, the portion of the surface of the semiconductor wafer 1 (see FIG. 1 (a)) where the chip-to-chip penetration is planned is shallower than the wafer thickness, about the final product thickness of the semiconductor wafer, or more A cut groove 13 is formed deeply (see FIG. 1B). [Grooving process]
The incision of the incision groove 13 is performed by appropriately adjusting the depth of penetration by a widely used blade dicing apparatus. The thickness of the wafer 1 is not limited, and is usually about 300 to 700 μm, and the depth of the cut groove 13 is preferably the same as the thickness of the target chip. It is appropriately set deeper and is generally about 20 to 200 μm.
(B) Next, a protective pressure-sensitive adhesive tape 16 comprising a pressure-sensitive adhesive layer 14 and a base film 15 is applied to the surface of the grooved semiconductor wafer 1 for surface protection (FIG. 2 (a)). reference). [Protective adhesive tape bonding process]
(C) With the protective adhesive tape 16 applied, the grooved portion of the penetrating portion is completely opened and the back surface of the wafer substrate is ground until it penetrates to reduce the thickness of the chip 1 ′. Divided into pieces (see FIG. 2B). [Thinning process]
(D) After the back surface grinding of the semiconductor wafer substrate is completed, the die bond sheet 12 is bonded to the back surface side of the semiconductor wafer while the protective adhesive tape is bonded (see FIG. 3). "Die bond sheet bonding process"
(E) Next, in a state where the ring frame 3 is supported and fixed, the die bond sheet is divided into individual chips by irradiating the die bond sheet with a laser along a penetrating portion opened by laser dicing. [Cutting process]

Furthermore, in the method of the present invention, after the step (d), before the step (e), the pressure-sensitive adhesive layer 4 is further formed on the base film 17 through which the laser passes, on the die bond sheet 12. It is also a preferred method to bond the dicing tape 18 (see FIG. 4).
Then, the laser 19 is irradiated along the penetrating portion opened from the base film 17 side of the dicing tape 18 (see FIG. 5 (a)), and the die bond sheet 12 is divided into chips and divided (see FIG. 5). 5 (b)).

Furthermore, the method of the present invention is a method in which a die bond sheet is bonded to the back side of the semiconductor wafer while the adhesive tape for protection is bonded, after the back surface grinding of the semiconductor wafer substrate in the step (d) is completed. It is preferable to change so that a die bond dicing tape may be bonded instead of the method of bonding both a sheet and a dicing tape.
As the die bond dicing tape, a laminated die bond dicing tape in which a die bond sheet 12 is laminated and integrated on the pressure-sensitive adhesive layer 4 side of a dicing tape 18 having a base film 17 through which laser is transmitted, or a substrate through which laser is transmitted. A die bond / dicing tape in which an adhesive layer is laminated on the film 17, a die bond / dicing tape in which an adhesive layer and an adhesive layer are laminated in this order are preferable.
Then, in a state of being supported and fixed by the ring frame 3, the laser 19 is applied to the adhesive layer along the penetrating portion opened from the base film side of the die-bonded dicing tape by laser dicing, and is cut and divided into chips. It is a method to convert. (Modification of FIGS. 4 and 5)

Further, in the method of the present invention, when the semiconductor wafer substrate is thinned to a thickness through which the previously grooved portion of step (c) penetrates, the back surface of the semiconductor wafer substrate is ground and then dried. It is preferable to apply an etching process to a predetermined thickness.
In that case, the back surface of the wafer is ground to such a thickness that the grooved portion does not penetrate, and then the entire surface of the back surface of the wafer is dry etched to remove the unnecessary thickness of the substrate wafer. Accordingly, the thin groove can be stably manufactured by penetrating the groove cutting portion without generating waste such as a substrate piece or dust and penetrating the groove portion.
A specific method of dry etching is plasma etching by plasma irradiation. For example, when a silicon wafer is used as a circuit substrate, a reaction with fluorine gas excited at a high frequency is applied to a substrate wafer having an unnecessary thickness under reduced pressure. There is a way to vaporize and remove.
These dry etchings are usually performed in a reduced-pressure atmosphere. At that time, when the protective adhesive tape is bonded to the back of the grooved wafer, the air trapped in the grooved part expands and damages the wafer. May end up. For this reason, when the thickness of the wafer is adjusted by dry etching, it is preferable that the protective adhesive tape is bonded in an atmosphere at a pressure lower than the atmospheric pressure.

In the method of the present invention, when the die bond sheet is irradiated with a laser along the penetrating portion opened by laser dicing while being supported and fixed by the ring frame 3 in the step (e), from the upper side of the protective adhesive tape or The protective adhesive tape can be peeled off, and irradiation can be performed using the gap between the chips.
Further, in the method of the present invention, as shown in FIG. 5 (a), the die bond sheet 12 exposed between the divided chips is replaced with a dicing tape 18 or a die bond dicing tape (laminated die bond tape). A laser 19 is irradiated from the base film 17 side (including the dicing tape) along the exposed penetrating portion, and the die bond sheet 12 is cut and divided into chips as shown in FIG. The method is preferably adopted. In this case, the laser 19 is consumed to cut the die bond sheet 12 and does not reach the chip 1 ', and does not damage the side surface of the chip that has been divided into pieces as described above. Is very rare.
If the laser is irradiated from the chip side, it will result in damage to the side surface of the chip, which is not preferable. Furthermore, since it is possible to reduce the laser diameter in accordance with the penetration width, it is possible to prevent the size of the die-bonded sheet 12 'divided into pieces from protruding from the chip 1'.

  In the method of the present invention, as shown in FIGS. 6 and 7, the base film 17 needs to play a role of supporting and fixing in the subsequent pick-up process. Do not cut or open through holes. For this purpose, in the present invention, the base film 17 applied to the dicing tape 18 or the die-bonded dicing tape must transmit the laser 19. If the laser 19 is transmitted, the base film 17 is not cut and can play a role of supporting and fixing. The substrate film 17 through which the laser transmits here does not mean that the laser 19 irradiated to the substrate film 17 has to pass through the 100% substrate film 17. This means that the material has a sufficient degree of transparency unless 17 is completely cut or a hole that penetrates the hole 17 is opened.

For example, when the base film 17 has a multilayer structure composed of two or more layers, even if several layers are cut by a laser, at least one of the multilayer structures may be cut by a laser. If the through-hole is not opened, there will be no problem since it can sufficiently support and fix in the subsequent pick-up process. Whether or not the base film is cut by a laser can generally be said to depend on factors such as the transmittance of the base film at the laser wavelength, the illuminance of the laser, and the thickness of the base film. If the transmittance is high, the absorption of the laser by the base film is small accordingly, and the possibility of being cut is reduced, but if the illuminance of the laser is high, the laser film is easily cut.
Moreover, it can be said that the greater the thickness of the base film, the higher the possibility of being left uncut and it becomes difficult to cut completely. Therefore, as the base film used in the present invention, it is necessary to select an appropriate material and set it to an appropriate thickness according to the wavelength and illuminance of the laser used. Considering the performance as a dicing tape or die bond dicing tape, it can be said that the thickness of the base film is generally in the range of 50 to 300 μm. However, within this range, the laser can be transmitted or the material can be selected. Just do it.

The material that can be used as the base film is not particularly limited, and polyethylene multiples such as polyethylene, polypropylene, ethylene-vinyl acetate copolymer, ethylene-propylene copolymer, ethylene-ethyl acrylate copolymer, etc. Copolymers, polyethylene terephthalate, polybutylene terephthalate, polyvinyl chloride, polycarbonate, ionomer resins, thermoplastic elastomers, etc. can be applied in various ways. The material will be selected.
For example, when the wavelength of the laser used is 355 nm, polyethylene, polypropylene, a polyethylene multi-component copolymer, an ionomer resin, or the like can be selected. Conversely, polyethylene terephthalate, polybutylene terephthalate, and the like have a lower transmittance at 355 nm than these resins, and thus may be cut by a laser or may have a through hole.

A general-purpose die bond sheet can be applied to the die bond sheet referred to in the present invention. For example, a die bond sheet made of an epoxy resin, a polyamide resin, a polyimide resin, a silicone resin, an acrylic resin and its metamorphosis, or a mixture thereof is widely known. ing.
In the present invention, the wafer is divided into chips by grinding the back surface of the wafer, the die bond sheet 12 is bonded to the back surface, and then the dicing tape 18 having the base film 17 through which the laser 19 is transmitted is bonded. The ring frame 3 is supported and fixed by a procedure such as. The dicing tape 18 in this case is composed of the base film 17 and the pressure-sensitive adhesive layer 4, and the pressure-sensitive adhesive layer 4 of the dicing tape 18 is bonded to the die bond sheet 12. In this case, since the chip with the die bond sheet is separated from the dicing tape and mounted on a lead frame or the like in the subsequent pick-up process, the peelability between the die bond sheet 12 and the dicing tape pressure-sensitive adhesive layer 4 is not good. Don't be.

A general acrylic adhesive can be applied to the adhesive layer of the dicing tape, but in order to reduce the peel strength from the die bond sheet, the acrylic adhesive and radiation-polymerizable compound are the main components. In many cases, a radiation curable pressure sensitive adhesive is applied. The radiation curable pressure sensitive adhesive are those having a characteristic that the adhesive strength is lost by irradiation of ultraviolet rays, peeling property from a die bond sheet becomes better. Specific examples of these acrylic pressure-sensitive adhesives and radiation-polymerizable compounds are as described later. The thickness of the pressure-sensitive adhesive layer is preferably in the range of 3 to 50 μm, and more preferably in the range of 5 to 20 μm.

  In the present invention, a laminated die bond / dicing tape in which both the die bond sheet 12 and the dicing tape 18 are laminated and integrated in advance may be used. This type is generally a laminated die-bonding / dicing tape that has already been laminated and integrated at the shipping stage. By applying this, it is possible to reduce the bonding process, which increases throughput. There are benefits. Therefore, it may be selected as appropriate in consideration of the cost of the die bond / dicing tape itself. In this case as well, as described above, since the peelability between the die bond sheet and the dicing tape pressure-sensitive adhesive layer must be good, the same can be said.

  Furthermore, you may apply the die-bonding dicing tape with which the adhesive layer was simply laminated | stacked on the base film which a laser permeate | transmits. In this case, the adhesive layer is separated from the base film in a subsequent pick-up process and mounted on a lead frame or the like. This adhesive layer has both the characteristics as an adhesive layer (die bond sheet) and the characteristics as a pressure-sensitive adhesive layer of a dicing tape. In general, acrylic, polyester, and urethane are used. Known adhesives containing adhesive components such as epoxy resins, epoxy resin curing agents, effect accelerators, silane coupling agents, phenoxy resins, and the like are used for adhesives such as epoxy, silicone, and natural rubber.

In the present invention, the acrylic adhesive described later is particularly preferably used. Also in this case, a radiation-curable pressure-sensitive adhesive may be applied for the purpose of improving the peelability from the base film. Depending on the balance between reliability and cost as an adhesive for bonding the chip and the lead frame, it may be properly used separately from the stacked type. The thickness of the adhesive layer is generally preferably in the range of 3 to 50 μm, and more preferably in the range of 5 to 20 μm.
This acrylic pressure-sensitive adhesive comprises a (meth) acrylic copolymer and a curing agent as components. The (meth) acrylic copolymer is, for example, a polymer having a (meth) acrylic acid ester as a polymer constituent unit, and a (meth) acrylic polymer of a (meth) acrylic acid ester copolymer, or functionality. Examples include copolymers with monomers, and mixtures of these polymers. As the molecular weight of these polymers, those having a weight average molecular weight of about 500,000 to 1,000,000 are generally applied.

  Moreover, a hardening | curing agent is used in order to make it react with the functional group which a (meth) acrylic-type copolymer has, and to adjust adhesive force and cohesion force. For example, 1,3-bis (N, N-diglycidylaminomethyl) cyclohexane, 1,3-bis (N, N-diglycidylaminomethyl) toluene, 1,3-bis (N, N-diglycidylaminomethyl) ) Epoxy compounds having two or more epoxy groups in the molecule such as benzene, N, N, N, N'-tetraglycidyl-m-xylenediamine, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate , 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, etc., an isocyanate compound having two or more isocyanate groups in the molecule, tetramethylol-tri-β-aziridini Lupropionate, trimethylol-tri-β-aziridinylpropionate, Examples thereof include aziridine compounds having two or more aziridinyl groups in the molecule, such as dimethylolpropane-tri-β-aziridinylpropionate and trimethylolpropane-tri-β- (2-methylaziridine) propionate. . What is necessary is just to adjust the addition amount of a hardening | curing agent according to the adhesive force of a bookstore, and 0.1-5.0 mass parts is suitable with respect to 100 mass parts of (meth) acrylic-type copolymers.

  Further, as the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is widely used. Trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol Diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are widely applicable.

  In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene). A terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) with an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl) Acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) Obtained by the reaction.

As a compounding ratio of the acrylic pressure-sensitive adhesive and the radiation-polymerizable compound in the radiation-curable pressure-sensitive adhesive, the radiation-polymerizable compound is 50 to 200 parts by weight, preferably 50 to 150 parts by weight with respect to 100 parts by weight of the acrylic pressure-sensitive adhesive. It is desirable to blend in the range of parts. In the case of this blending ratio range, the adhesive strength of the pressure-sensitive adhesive layer is greatly reduced after radiation irradiation.
Furthermore, the radiation-curable pressure-sensitive adhesive can be made into a radiation-polymerizable acrylic ester copolymer instead of blending the radiation-polymerizable compound with the acrylic pressure-sensitive adhesive as described above. is there.
When the pressure-sensitive adhesive layer is polymerized by radiation, a photopolymerization initiator such as isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, benzyl methyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxy Methylphenylpropane or the like can be used in combination. By adding at least one of these to the pressure-sensitive adhesive layer, the polymerization reaction can proceed efficiently.

Usually, the ultraviolet rays irradiated to cure the pressure-sensitive adhesive layer have a much wider wavelength distribution than lasers, and various photopolymerization initiators having an absorption wavelength within the wavelength range can be used.
However, in the method for manufacturing a semiconductor chip with an adhesive according to the present invention, when the absorption wavelength of the photopolymerization initiator used for the adhesive layer is very close to the wavelength of the laser, the adhesive layer cuts the die bond sheet. Therefore, it is difficult to cut the die bond sheet by irradiating the laser from the base film side of the dicing tape. In the present invention, ultraviolet rays are irradiated in advance to cure the pressure-sensitive adhesive layer, so that the laser passes through the pressure-sensitive adhesive layer and the die bond sheet can be easily cut. This is because the photopolymerization initiator reacts by irradiation with ultraviolet rays and does not absorb light of that wavelength.

  Next, the present invention will be described in more detail based on examples using a die bond dicing tape, but the present invention is not limited to the following examples, and is within the scope described in the claims. It can be modified in various ways.

Reference Examples 1-4, Comparative Examples 1-4
Grooves having a width of 50 μm and a depth of 100 μm were formed on a surface side of an 8-inch (20.3 cm) wafer having a thickness of 650 μm by a disco blade dicer DAD340 so as to form a lattice shape with an interval of 5 mm. Next, a protective adhesive tape (product name SP-575B-150, manufactured by Furukawa Electric Co., Ltd.) is bonded to the front surface side where the groove of the wafer is formed, and the back surface is ground with a disco grinder DFG850 to form on the surface. Grinding was performed until the groove was completely opened. Next, the die-bonding sheet A and the dicing tape shown in the reference examples and comparative examples in Table 1 or the laminated die-bonding and dicing tape A in which the die-bonding sheet and the dicing tape are laminated and integrated, or the substrate film is adhesively bonded. The die bond / dicing tape A on which the agent layer was laminated was bonded to the ground back side and supported and fixed by a ring frame (see FIG. 4).

Next, a wafer-attached sample supported and fixed by a ring frame is set on a disco laser dicing apparatus DFL7160 (laser wavelength: 355 nm) so that the laser is applied from the base film side, and a 50 μm wide chip-to-chip penetration part These were diced by applying a laser through the substrate film so that the kerf width was about 50 μm on the die bond sheet or the adhesive layer exposed to (see FIG. 5).
For Comparative Example 1, the sample with the wafer supported and fixed by the ring frame was set again on the disco blade dicer DAD340, and the die bond sheet or the adhesive layer exposed at the chip-to-chip penetrating part having a width of 50 μm. Was diced with a blade so that the kerf width was about 50 μm. As in Comparative Example 1, Comparative Example 2 was set again on Disco Blade Dicer DAD340 and diced with a blade so that the kerf width was about 30 μm.

The production of each material shown in Table 1 to be described later is as follows.
Preparation of die bond sheet A 50 parts by weight of a cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1200, softening point 70 ° C.) as an epoxy resin, 1.5 parts by weight of γ-mercaptopropyltrimethoxysilane as a silane coupling agent, γ -Cyclohexanone was added to a composition comprising 3 parts by weight of ureidopropyltriethoxysilane and 30 parts by weight of silica filler having an average particle size of 16 nm, and the mixture was stirred and mixed, and further kneaded for 90 minutes using a bead mill. 100 parts by weight of acrylic resin (weight average molecular weight: 800,000, glass transition temperature-17 ° C), 5 parts of dipentaerythritol hexaacrylate as a hexafunctional acrylate monomer, 0.5 part of an adduct of hexamethylene diisocyanate as a curing agent, 2.5 parts of 2-phenylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name Curesol 2PZ) was added, stirred and mixed, and vacuum degassed to obtain an adhesive. This adhesive was applied to a release film having a thickness of 25 μm and dried by heating at 110 ° C. for 1 minute to form a B-stage coating film having a thickness of 40 μm. Thus, a die bond sheet A was produced.
-Production of base film Except for Comparative Example 3, it was obtained by film-forming by the T-die method using the materials described in the column of base film in Table 1. However, only the comparative example 3 used the Toyobo PET film "Ester film E5100-100" as it was.
-Preparation of dicing tape Applying the adhesive described in the column of the adhesive layer in Table 1 to a thickness of 10 μm on the base film obtained by the method described in the preparation of the base film. I got it.

-Production of laminated die-bonding and dicing tape A Lamination is performed so that the surface of the die-bonding sheet A without the release film and the adhesive layer of the dicing tape are in contact with each other, and then the die-bonding sheet A is released. The film was peeled off. The lamination conditions were a linear pressure of 0.1 to 100 kgf / cm (1 to 980 N / cm) at 10 to 100 ° C. The dicing tape used was the dicing tape used in Reference Example 1 (base film: polyethylene 100 μm thickness, adhesive layer: adhesive A 10 μm thickness).
-Production of die bond dicing tape A Weight average molecular weight 900,000, glass transition obtained by copolymerizing 55 parts by weight of butyl acrylate, 10 parts by weight of methyl methacrylate, 20 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate 100 parts by weight of a copolymer at a temperature of −28 ° C., 3 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L), bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., product) Name Epicoat 1002) 100 parts by weight, phenol novolac type epoxy resin (Japan Epoxy Resin Co., Ltd., trade name Epicoat 152) 20 parts by weight, energy ray polymerizable compound tetramethylolmethane tetraacrylate 50 parts by weight, epoxy 2 parts by weight of dicyandiamide as a curing agent, 1 part by weight of 2-phenyl-4,5-hydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curezol 2PHZ) as a curing accelerator, 1-hydroxy as a photopolymerization initiator 2 parts by weight of cyclohexyl phenyl ketone was mixed to obtain an adhesive.
This adhesive layer was applied to a 100 μm thick polyethylene film so as to have a thickness of 10 μm to obtain a die bond / dicing tape A. The base film used in Reference Example 1 was used as the polyethylene film having a thickness of 100 μm.

For each of Reference Examples 1 to 4 and Comparative Examples 1 to 4, the following observations were performed, and these evaluations are shown in Table 2.
-Cutting property of die bond sheet or adhesive layer The cutting state of the die bond sheet or adhesive layer was observed to evaluate the cutting property.
-State of base film The part (the part to which the laser was applied) corresponding to the penetration part of a base film was observed, and the presence or absence of the cutting | disconnection by a laser and a through hole was observed.
・ Cutability of chip side surface The cutting finish, chipping and cracking of the chip side surface were observed.

Evaluation results
Reference Examples 1-4: Since the substrate permeability of the laser is good, the die bond sheet or the adhesive layer is completely cut over the entire surface of the wafer with a kerf width of 50 μm between chip and chip. The base film is not cut or penetrated, and there is no damage or trauma. The chip side has no chipping or cracks, and the finish is clean.
Comparative Example 1: The die bond sheet A exposed to have a chip-to-chip penetrating width of 50 μm was diced so as to have a kerf width of 50 μm, but the die bond sheet A was cut while the positioning was difficult and the blade was in contact with the chip side surface. . As a result, chips and cracks frequently occurred on the side surface of the chip.
Comparative Example 2: Dicing was performed so that the kerf width (30 μm) was narrower than the chip-to-chip penetration width of 50 μm, so that the blade did not contact the side surface of the chip. However, the size of the die-bonded sheet A formed into a chip was larger than the chip size, and the die-bonded sheet protruded from the back surface of the chip. It is disadvantageous and unfavorable for compact packaging.
Comparative Examples 3 and 4: The base film was poor in laser permeability, the base film was partially cut, and many through holes were generated. As a result, the energy of the laser was absorbed by the base film, and the die bond sheet A was not cut at all.

Example 1 , Reference Examples 5, 6 and Comparative Examples 5-6
In Example 1 , Reference Examples 5 and 6, and Comparative Examples 5 to 6, the same die bond sheet A as that of Reference Example 1 was used as a die bond sheet as shown in Table 3 below. The dicing tape is the same as that described in Table 1, but unlike the adhesive A in Table 1 as an adhesive, as shown in the column of the adhesive layer in Table 3, the photopolymerization initiator has an absorption wavelength. A UV curable pressure sensitive adhesive using isopropyl benzoin ether having a thickness of 355 nm is applied.
-Production of Multilayer Die Bonding / Dicing Tape B Production was conducted in the same manner as the multilayer die bonding / dicing tape A used in Reference Example 3 except that isopropyl benzoin ether was used as a photopolymerization initiator for the pressure-sensitive adhesive layer.
-Production of die bond dicing tape B Weight average molecular weight 900,000, glass transition obtained by copolymerizing 55 parts by weight of butyl acrylate, 10 parts by weight of methyl methacrylate, 20 parts by weight of glycidyl methacrylate and 15 parts by weight of 2-hydroxyethyl acrylate 100 parts by weight of a copolymer at a temperature of −28 ° C., 3 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L), bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., product) Name Epicoat 1002) 100 parts by weight, phenol novolac type epoxy resin (Japan Epoxy Resin Co., Ltd., trade name Epicoat 152) 20 parts by weight, energy ray polymerizable compound tetramethylolmethane tetraacrylate 50 parts by weight, epoxy 2 parts by weight of dicyandiamide as a curing agent, 1 part by weight of 2-phenyl-4,5-hydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name: Curezol 2PHZ) as a curing accelerator, isopropyl benzoin ether as a photopolymerization initiator 2 mass parts was mixed and the adhesive agent was obtained.
This adhesive layer was applied to a 100 μm thick polyethylene film to a thickness of 10 μm to obtain a die bond / dicing tape B. The base film used in Reference Example 1 was used as the polyethylene film having a thickness of 100 μm.

The die bond sheet A and the dicing tape manufactured as described above, or the laminated die bond / dicing tape B in which the die bond sheet and the dicing tape are laminated and integrated, or the die bond in which the adhesive layer is laminated on the base film. -The semiconductor with an adhesive agent was manufactured similarly to the reference examples 1-4 using the dicing tape B. At that time, in Example 1 and Reference Examples 5 and 6 , before the step of dicing by irradiating the die bond sheet or the adhesive layer with laser, the substrate film side was irradiated with ultraviolet rays in advance. However, in Comparative Examples 5 to 6, ultraviolet irradiation was not performed before laser dicing.
About Example 1 , Reference Examples 5 and 6, and Comparative Examples 5 to 6, the cutting state of the die bond sheet or the adhesive layer was observed, and their cutting properties were evaluated and shown in Table 4.

Evaluation Results Example 1 , Reference Examples 5 and 6: Since the substrate permeability of the laser is good, the die bond sheet A or the adhesive layer is completely on the entire wafer surface with a kerf width of a chip-chip street width of 50 μm. Disconnected.
Comparative Examples 5 and 6: The laser was absorbed by the pressure-sensitive adhesive layer, and the die bond sheet A or the adhesive layer was hardly cut.

It is sectional drawing showing the state which put the cutting groove in the site | part equivalent to the penetration part of a wafer. It is sectional drawing which bonded the protective adhesive tape on the wafer surface, (A) is the state before a penetration part opens, (B) represents the state which grind | polished the wafer back surface and was divided into pieces. It is sectional drawing showing the state which bonded the die-bonding sheet | seat on the grind | polished surface of the wafer. It is sectional drawing showing the state which bonded and fixed by the ring frame the dicing tape with the base film which a laser permeate | transmits to the surface where the die-bonding sheet was bonded. It is sectional drawing which irradiates a laser along the penetration part opened from the base film side of the dicing tape, (A) represents during irradiation, and (B) represents the state where the die bond sheet was divided into pieces. It is sectional drawing showing the state after protection adhesive tape peeling from the state of FIG. It is sectional drawing showing the state from which the chip | tip with a die-bonding sheet peels from a dicing tape adhesive layer, and is extract | collected. It is sectional drawing which shows the example of a general blade cut dicing system. It is sectional drawing which shows the state in which the chip | tip was joined to the lead frame with the liquid adhesive agent. It is sectional drawing which shows the dicing in the state by which the dicing tape was bonded by the wafer back surface. Sectional view when cutting the die-bonding sheet between the chips with a dicing blade having the same thickness as the chip-to-chip width. (A) is before cutting, (B) is the state where the blade is in contact with the side of the chip Represents. It is sectional drawing when the die-bonding sheet | seat between chips | tips is cut | disconnected with a dicing blade thinner than the width | variety between a chip | tip, (A) is before cutting | disconnection and (B) represents the state cut | disconnected. FIG. 13 is a cross-sectional view illustrating a state in which the die bond sheet is cut by a size larger than a chip size as a result of cutting the die bond sheet by the method of FIG. 12.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1 'Semiconductor chip 2 Blade 3 Ring frame 4 Dicing tape adhesive layer 5 Dicing tape base film 6 Dicing tape 7 Dicer chuck table 8 Liquid adhesive 9 Inner lead 10 Die pad 11 Lead frame 12 Die bond sheet 12' pieces Die-bonded sheet 13 Cut groove 14 Protective adhesive tape adhesive layer 15 Protective adhesive tape substrate film 16 Protective adhesive tape 17 Laser-transmitting substrate film 18 Laser-transmitting substrate film Dicing tape 19 laser

Claims (4)

(A) a step of grooving a portion corresponding to the penetration portion on the surface of the semiconductor wafer substrate in advance to the depth of the final product of the semiconductor wafer or deeper than that;
(B) bonding a protective adhesive tape to the grooved semiconductor wafer substrate surface;
(C) a step of thinning the semiconductor wafer substrate to a thickness through which a previously grooved portion penetrates;
(D) a step of bonding a die bond sheet to the back surface of the semiconductor wafer substrate while bonding the protective adhesive tape after finishing the back surface grinding of the semiconductor wafer substrate;
(De1) A step of bonding a dicing tape on which a pressure-sensitive adhesive layer made of an ultraviolet curable pressure-sensitive adhesive that is cured by irradiation of ultraviolet rays is further formed on the base film, to the die bond sheet;
(De2) irradiating ultraviolet rays from the base film side of the dicing tape to cure the pressure-sensitive adhesive layer;
(E) A method of manufacturing a semiconductor chip with an adhesive, comprising: irradiating the die bond sheet and the cured adhesive layer with a laser along the penetrating portion of the semiconductor wafer to cut the die bond sheet. . (C) In the step of thinning the semiconductor wafer substrate to a thickness through which the pre-grooved portion penetrates, the back surface of the semiconductor wafer substrate is ground and then dry-etched to obtain a predetermined thickness. The method of manufacturing a semiconductor chip with an adhesive according to claim 1 . 3. The method for manufacturing a semiconductor chip with an adhesive according to claim 1, wherein in the step (e), laser light is irradiated from the dicing tape side. The substrate film of at least the dicing tape transmits an irradiated laser, and the die bond sheet, the adhesive layer, or the adhesive layer is cut by the laser. a semiconductor chip manufacturing method according to any one of 3.

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