TWI651207B - 保護膜形成用複合薄片 - Google Patents
保護膜形成用複合薄片 Download PDFInfo
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- TWI651207B TWI651207B TW103145986A TW103145986A TWI651207B TW I651207 B TWI651207 B TW I651207B TW 103145986 A TW103145986 A TW 103145986A TW 103145986 A TW103145986 A TW 103145986A TW I651207 B TWI651207 B TW I651207B
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- film
- protective film
- adhesive layer
- forming
- adhesive
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Classifications
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Abstract
本發明提供一種保護膜形成用複合薄片。本發明的保護膜形成用複合薄片(1),係包括:黏著薄片(2),在基材(21)的一面側積層黏著劑層(22)而成;保護膜形成用薄膜(3),積層於黏著薄片(2)的黏著劑層(22)側;及治具用黏著劑層(4),積層於保護膜形成用薄膜(3)的與黏著薄片(2)側相反一側的周緣部,黏著薄片(2)的黏著劑層(22)的厚度為1~8μm。依該種保護膜形成用複合薄片(1),能夠有效地抑制加熱製程及冷卻製程中之薄片(1)的鬆弛,並且能夠良好地進行切割及拾取。
Description
本發明係關於一種保護膜形成用複合薄片,其接著於半導體晶圓等工件上,能夠以該狀態進行工件之加工(例如,切割),並且能夠在該工件或者加工該工件而得到的物體(例如,半導體晶片)上形成保護膜。
近年來,藉由被稱為倒裝方式的安裝方法製造著半導體裝置。在該方法中,在安裝具有形成有凸塊等電極之電路面的半導體晶片時,將半導體晶片的電路面側接合在引線框架等晶片裝載部上。因此,呈未形成有電路之半導體晶片的背面側外露之結構。
因此,為了保護半導體晶片,多在半導體晶片的背面側形成由硬質的有機材料構成之保護膜。因此,專利文獻1中公開有一種具有能夠形成上述保護膜之熱硬化性的保護膜形成層之保護膜形成兼切割用薄片。依該保護膜形成兼切割用薄片,能夠進行半導體晶圓的切割及對半導體晶片形成保護膜這兩者,能夠得到帶有保護膜之半導體晶片。
當使用上述保護膜形成兼切割用薄片時,將該薄片的周緣部貼附於環狀框架,並且將保護膜形成層貼附於半導體晶圓,以該狀態交付於加熱製程及冷卻製程。藉由經該些製
程,保護膜形成層熱硬化而形成保護膜。
但是,當使用習知之保護膜形成兼切割用薄片時,在一邊由環狀框架支撐保護膜形成兼切割用薄片,一邊交付於上述加熱製程時,會發生保護膜形成兼切割用薄片因半導體晶圓的重量而鬆弛,即使經冷卻製程,亦無法恢復原狀態之問題。如此,若保護膜形成兼切割用薄片鬆弛,則在搬送時容納於盒體時產生不良情況或者在吸附台的比晶圓對應部更靠外側無法順利進行針對薄片之真空吸附,會產生薄片上集中產生皺紋等不良情況,或者在進行擴張時,由於薄片已伸長而產生不良情況。
並且,專利文獻1的保護膜形成兼切割用薄片為保護膜形成層直接積層於支撐薄膜上之構成(第1圖)或者不具有環狀框架專用的黏著劑層之構成(第2圖)。若如前者構成般在支撐薄膜與保護膜形成層之間不存在黏著劑層,則有時產生支撐薄膜與保護膜形成層之間的接著力過剩而無法拾取晶片,或者相反地支撐薄膜與保護膜形成層之間的接著力過弱而晶片在切割中脫落之問題。並且,若如後者構成般不具有環狀框架專用的黏著劑層,則無法良好地發揮針對環狀框架之接著力,或者難以拾取晶片。
專利文獻2亦公開有一種具有與專利文獻1的保護膜形成兼切割用薄片相同的構成之帶有保護膜形成層之切割薄片。因而,在該帶有保護膜形成層之切割薄片中,有時亦會產生如上所述之與接著力相關之問題。另一方面,專利文獻2雖然提及了熱硬化時的鬆弛,但未考慮到冷卻製程中的恢復。
另外,專利文獻3公開有一種分別使用作為保護膜形成層之半導體背面用薄膜和切割膠帶之半導體裝置製造方法。在該專利文獻3的方法中,半導體背面用薄膜以未硬化的狀態進行切割,在進行晶片的拾取之後,進行半導體背面用薄膜的熱硬化,因此不會產生如上所述之鬆弛所引起之問題。
【專利文獻1】日本專利特開2010-199541號公報
【專利文獻2】WO2013/047674號公報
【專利文獻3】日本專利特開2012-156377號公報
本發明係鑒於如上所述之實際情況而完成者,其目的在於提供一種能夠有效地抑制加熱製程及冷卻製程中之薄片的鬆弛,並且能夠良好地進行切割及拾取之保護膜形成用複合薄片。
為了實現上述目的,第一、本發明提供一種保護膜形成用複合薄片,其包括:黏著薄片,在基材的一面側積層黏著劑層而成;保護膜形成用薄膜,積層於前述黏著薄片的前述黏著劑層側;及治具用黏著劑層,積層於前述保護膜形成用薄膜的與前述黏著薄片側相反一側的周緣部,其特徵為:前述黏著薄片的前述黏著劑層的厚度為1~8μm(發明1)。
第二、本發明提供一種保護膜形成用複合薄片,其包括:黏著薄片,在基材的一面側積層黏著劑層而成;保護
膜形成用薄膜,積層於前述黏著薄片的前述黏著劑層側的中央部;及治具用黏著劑層,積層於前述黏著薄片的前述黏著劑層側的周緣部,其特徵為:前述黏著薄片的前述黏著劑層的厚度為1~8μm(發明2)。
在上述發明(發明1、2)中,藉由上述黏著劑層的存在,能夠良好地進行切割及拾取。並且,藉由如上規定該黏著劑層的厚度,加熱時之黏著劑層的流動量較小,保護膜形成用複合薄片的鬆弛得到抑制,其結果,能夠抑制冷卻時的收縮所引起之保護膜形成用複合薄片的恢復變得不徹底。藉此,能夠減小對其後的製程帶來障礙之可能性。
在上述發明(發明1、2)中,前述基材係聚丙烯薄膜或將聚丙烯薄膜和其他薄膜組合而成之積層薄膜為較佳(發明3)。
在上述發明(發明1~3)中,前述治具用黏著劑層具有環狀的形狀,且形成為當前述保護膜形成用薄膜貼附於工件時,前述工件的主要外周緣與前述治具用黏著劑層的內周緣在平面方向的間隙小於10mm為較佳(發明4)。
在上述發明(發明1~4)中,構成前述黏著劑層之黏著劑在130℃下之儲存彈性模量為1.0×105~8.0×106Pa為較佳(發明5)。
在上述發明(發明1~5)中,前述工件係半導體晶圓,前述保護膜形成用薄膜係在前述半導體晶圓或將前述半導體晶圓切割而得到之半導體晶片上形成保護膜之層為較佳(發明6)。
依本發明之保護膜形成用複合薄片,可以有效地抑制加熱製程及冷卻製程中之薄片的鬆弛,並且能夠良好地進行切割及拾取。
1、1A‧‧‧保護膜形成用複合薄片
2‧‧‧黏著薄片
21‧‧‧基材
22‧‧‧黏著劑層
3‧‧‧保護膜形成用薄膜
4‧‧‧治具用黏著劑層
5‧‧‧半導體晶圓
6‧‧‧環狀框架
第1圖係本發明的一實施形態之保護膜形成用複合薄片的剖面圖。
第2圖係貼附於工件之狀態的保護膜形成用複合薄片的平面圖。
第3圖係表示本發明的一實施形態之保護膜形成用複合薄片的使用例之剖面圖。
第4圖係本發明的另一實施形態之保護膜形成用複合薄片的剖面圖。
第5圖係表示本發明的另一實施形態之保護膜形成用複合薄片的使用例之剖面圖。
以下,對本發明的實施形態進行說明。
第1圖係本發明的一實施形態之保護膜形成用複合薄片的剖面圖,第2圖係貼附於工件之狀態的保護膜形成用複合薄片的平面圖。如第1圖所示,本實施形態之保護膜形成用複合薄片1構成為包括在基材21的一面積層黏著劑層22而成之黏著薄片2、積層於黏著薄片2的黏著劑層22側之保護膜形成用薄
膜3、以及積層於保護膜形成用薄膜3的與黏著薄片2側相反一側的周緣部之治具用黏著劑層4。另外,本實施形態之保護膜形成用複合薄片1係指保護膜形成用薄膜3尚未貼附於工件者。
在本實形態中,如第1圖及第2圖所示,黏著薄片2的基材21及黏著劑層22、以及保護膜形成用薄膜3形成為相同的大小及形狀,平面視為圓形,但本發明並非限定於此者。例如,黏著薄片2和保護膜形成用薄膜3可以係不同之大小或形狀,亦可以均係由平面視為多邊形或圓弧與直線的組合構成之形狀等。
並且,在本實形態中,如第1圖及第2圖所示,治具用黏著劑層4形成為環狀,平面視時,其外周緣位於與黏著薄片2及保護膜形成用薄膜3的外周緣相同的位置,但本發明並非限定於此者。例如,治具用黏著劑層4可以不係環狀而在中途被切斷,平面視時,外周緣亦可以位於與黏著薄片2或保護膜形成用薄膜3的外周緣不同之位置。
實施形態之保護膜形成用複合薄片1用於在對工件進行加工時貼附於該工件而保持該工件,並且在該工件或由該工件得到之晶片上形成保護膜。在本實施形態中,該保護膜藉由使保護膜形成用薄膜3熱硬化而形成。作為一例,實施形態之保護膜形成用複合薄片1用於在作為工件之半導體晶圓的切割加工時保持半導體晶圓,並且在藉由切割而得到之半導體晶片上形成保護膜,但並非限定於此者。
1.黏著薄片
本實施形態之保護膜形成用複合薄片1的黏著薄片2構成為包括基材21、以及積層於基材21的一面之黏著劑層22。藉由該黏著劑層22的存在而控制黏著劑層22的黏著力,藉此在切割保護膜形成用薄膜3時能夠牢固地進行固定,且能夠發揮可以輕鬆地拾取藉由切割而得到的晶片之程度的適度的剝離性。若不具有黏著劑層22,則有時產生基材21與保護膜形成用薄膜3的接著力過剩而無法拾取晶片,或者相反地,基材21與保護膜形成用薄膜3的接著力過弱而晶片在切割中脫落之問題。
1-1.黏著劑層
本實施形態中之黏著劑層22的厚度為1~8μm,2~8μm為較佳,3~7μm尤為佳。構成黏著劑層22之材料(黏著劑)通常在高溫下具有顯示出流動性之性質。在貼附於工件及環狀框架等治具之保護膜形成用複合薄片1上施加基於工件的重量之負荷,若在該狀態下為了進行保護膜形成用薄膜3的熱硬化而交付於加熱製程,則黏著劑層22因上述負荷而流動。若黏著劑層22的厚度如習知般較厚,具體超過8μm,則黏著劑層22的流動量較大,在熱硬化之保護膜形成用薄膜3與黏著劑層22之間產生偏離而保護膜形成用複合薄片1的鬆弛變得顯著,有時在加熱製程後的冷卻製程中基於收縮之恢復變得不徹底。但是,如上所述,藉由將黏著劑層22的厚度設為8μm以下,加熱時之黏著劑層22的流動量變小,保護膜形成用複合薄片1的鬆弛得到抑制。其結果,能夠抑制基於冷卻時的收縮之保護膜形成用複合薄片1的恢復變得不徹底,且能夠減少對其後的
製程帶來障礙之可能性。
另一方面,黏著劑層22藉由其厚度為1μm以上而保持塗佈厚度的均勻性,能夠發揮適合保護膜形成用複合薄片1的用途之黏著力。
黏著劑層22可以由單層構成,亦可以由2層以上的多層構成,多層時可以由同一材料(黏著劑)構成,亦可以由不同之材料(黏著劑)構成。
構成黏著劑層22之黏著劑可以係非硬化性的黏著劑,亦可以係硬化性的黏著劑。並且,硬化性的黏著劑可以係硬化前的狀態,亦可以係硬化後的狀態。當黏著劑層22由多層構成時,可以係將非硬化性的黏著劑和硬化性的黏著劑組合而成者。作為非硬化性的黏著劑,例如可以舉出丙烯酸系黏著劑、橡膠系黏著劑、矽酮系黏著劑、氨酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等,其中,丙烯酸系黏著劑為較佳。作為硬化性的黏著劑,例如可以舉出能量線硬化性黏著劑、熱硬化性黏著劑等,其中,能量線硬化性黏著劑為較佳,丙烯酸系的能量線硬化性黏著劑尤為佳。
當黏著劑層22由能量線硬化性黏著劑構成時,在將保護膜形成用複合薄片1貼附於被黏物之階段,該能量線硬化性黏著劑可以硬化,亦可以不硬化,但若考慮後述之理想的儲存彈性模量,則不硬化為較佳。
構成黏著劑層22之能量線硬化性黏著劑可以係以具有能量線硬化性之聚合物為主成份者,亦可以係以不具有能量線硬化性之聚合物和能量線硬化性的多官能單體和/或寡聚
物的混合物為主成份者。
以下,對於能量線硬化性黏著劑將具有能量線硬化性之聚合物作為主要成分之情況進行說明。
具有能量線硬化性之聚合物,較佳為在側鏈中導入具有能量線硬化性之官能基(能量線硬化性基)之(甲基)丙烯酸酯(共)聚合物(A)(以下,有時稱為“能量線硬化型聚合物(A)”。)。該能量線硬化性聚合物(A),較佳為使具有含官能基單體單位之(甲基)丙烯酸系共聚物(a1)與具有結合於其官能基之取代基之含不飽和基之化合物(a2)反應而得到。
丙烯酸系共聚物(a1)由從含官能基單體導入之構成單位與從(甲基)丙烯酸酯單體或其衍生物導入之構成單位構成。
作為丙烯酸系共聚物(a1)之構成單位之含官能基單體,較佳為在分子內具有聚合性之雙鍵、羥基、氨基、取代氨基、環氧基、羧基等官能基之單體。
作為上述含官能基單體之更具體之例,可以列舉出2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、3-羥丙基(甲基)丙烯酸酯、4-羥丁基(甲基)丙烯酸酯、縮水甘油(甲基)丙烯酸酯、丙烯酸等,該等可以單獨或者兩種以上組合使用。
作為構成丙烯酸系共聚物(a1)之(甲基)丙烯酸酯單體,可以使用烷基之碳數為1~20之烷基(甲基)丙烯酸酯、環烷基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯。在
該等之中,特別佳為烷基之碳數為1~18之烷基(甲基)丙烯酸酯,例如可以使用甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、丙基(甲基)丙烯酸酯、n-丁基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯等。
丙烯酸系共聚物(a1),通常含有從上述含官能基單體導入之構成單位3~100質量%,較佳為以5~40質量%之比例含有,通常含有從(甲基)丙烯酸酯單體或其衍生物導入之構成單位0~97%質量%,較佳為以60~95質量%之比例含有。
丙烯酸系共聚物(a1),藉由以例行方法共聚如上所述之含官能基單體與(甲基)丙烯酸酯單體或其衍生物而得到,但除該等單體之外也可以共聚二甲基丙烯醯胺、甲酸乙烯酯、醋酸乙烯酯、苯乙烯等。
藉由使上述具有含官能基單體單位之丙烯酸系共聚物(a1)與具有結合於其官能基之取代基之含不飽和基之化合物(a2)反應,而可以得到能量線硬化型聚合物(A)。
含不飽和基化合物(a2)所具有之取代基可以根據丙烯酸系共聚物(a1)所具有之含官能基單體單位的官能基的種類適當進行選擇。例如,當官能基為羥基、氨基或取代氨基時,作為取代基,異氰酸酯基或環氧基為較佳,當官能基為環氧基時,作為取代基,氨基、羧基或吖丙啶基為較佳,當官能基為羧基時,作為取代基,環氧基為較佳。
又,在含不飽和基之化合物(a2)中,每一個分子含有能量線聚合性之碳一碳雙鍵1~5個,較佳為含有1~2個。作為此類含不飽和基之化合物(a2)之具體例,可以列舉
出例如2-甲基丙烯醯氧基乙基異氰酸酯、甲基-異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯基異氰酸酯、丙烯基異氰酸酯、1,1-(二丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或聚異氰酸酯化合物與羥乙基(甲基)丙烯酸酯反應而得的丙烯醯基單異氰酸酯化合物;藉由二異氰酸酯化合物或聚異氰酸酯化合物、多元醇化合物以及羥乙基(甲基)丙烯酸酯反應而得的丙烯醯基單異氰酸酯化合物;縮水甘油(甲基)丙烯酸酯;(甲基)丙烯酸、2-(1-氮丙啶)乙基(甲基)丙烯酸酯、2-乙烯基-2-噁唑啉、2-異丙烯基-2-噁唑啉等。
含不飽和基之化合物(a2),在上述丙烯酸系共聚物(a1)之每100當量含官能基單體中,通常使用10~100當量,而以20~95當量之比例使用為佳。
在丙烯酸系共聚物(a1)與含不飽和基之化合物(a2)之反應中,根據官能基與取代基之組合,可以適當選擇反應之溫度、壓力、溶劑、時間、有無觸媒、觸媒之種類。藉此,在丙烯酸系共聚物(a1)中存在之官能基與含不飽和基之化合物(a2)中之取代基反應,不飽和基被導入丙烯酸系共聚物(a1)中之側鏈,得到能量線硬化型聚合物(A)。
如此得到之能量線硬化型聚合物(A)之重量平均分子量,較佳為1萬以上,特別佳為15萬~150萬,更佳為20~100萬。另外,本說明書中之重量平均分子量(Mw)為藉由凝膠滲透層析法(GPC法)測定之聚苯乙烯換算值。
即使在能量線硬化性黏著劑將具有能量線硬化性之聚合物作為主要成分之情況下,能量線硬化性黏著劑也可以
進而含有能量線硬化性之單體以及/或者寡聚物(B)。
作為能量線硬化性之單體以及/或者寡聚物(B),可以使用例如多元醇與(甲基)丙烯酸之酯等。
作為上述能量線硬化性之單體以及/或者寡聚物(B),可以列舉出例如環己基(甲基)丙烯酸酯、異冰片(甲基)丙烯酸酯等單官能丙烯酸酯類、三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、二羥甲基三環癸烷二(甲基)丙烯酸酯等多官能丙烯酸酯類、聚酯寡聚(甲基)丙烯酸酯、聚氨酯寡聚(甲基)丙烯酸酯等。
在混合能量線硬化性之單體以及/或者寡聚物(B)之情況下,能量線硬化性黏著劑中之能量線硬化性之單體以及/或者寡聚物(B)之含量,較佳為5~80質量%,特別佳為20~60質量%。
此處,在作為用於使能量線硬化性樹脂成分硬化之能量線使用紫外線之情況下,較佳為添加光聚合引發劑(C),藉由使用該光聚合引發劑(C),能夠減少聚合硬化時間以及光照射量。
作為光聚合引發劑(C),具體可以列舉出二苯基酮、苯乙酮、安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基縮酮、2,4-二乙基噻噸酮、1-羥基環戊基己基苯基酮、
苄基二苯基硫化物、四甲基蘭姆硫化物、偶氮二異丁腈、苄基、二苄基、雙乙醯、β-自由基蒽醌、(2,4,6-三甲基苯甲醯二苯基)氧化膦、2-苯並噻唑-N,N-二乙基二硫代胺基甲酸鈉、寡聚{2-羥基-2-甲基-1-[4-(1-丙烯基)苯基]丙酮}、2,2-二甲氧基-1,2-二苯基乙酮(2,2-dimethoxy-1,2-diphenylethan-1-one)等。該等可以單獨使用,也可以兩種以上組合使用。
光聚合引發劑(C),對於能量線硬化型共聚物(A)(在混合能量線硬化性之單體以及/或者寡聚物(B)之情況下,能量線硬化型共聚物(A)以及能量線硬化性之單體以及/或者寡聚物(B)之總量100質量份)100質量份,較佳為以0.1~10質量份,特別佳為以0.5~6質量份之範圍之量使用。
在能量線硬化性黏著劑中,除上述成分之外,也可以適當地混合其他成分。作為其他成分,可以列舉出例如不具有能量線硬化性之聚合物成分或者寡聚物成分(D)等。
作為不具有能量線硬化性之聚合物成分或者寡聚物成分(D),可以列舉出例如聚丙烯酸酯、聚酯、聚氨酯、聚碳酸酯、聚烯烴等,以重量平均分子量(Mw)為3000~250萬之聚合物或者寡聚物為佳。
並且,能量線硬化性黏著劑可以藉由交聯劑(E)形成交聯結構。作為交聯劑(E),可以使用具有與能量線硬化型共聚物(A)等所具有之官能基的反應性之多官能性化合物。作為該種多官能性化合物的例子,可以舉出異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、氮丙啶化合物、阱化合物、醛化合物、噁唑啉化合物、金屬醇鹽化合物、金屬螯
合化合物、金屬鹽、銨鹽、反應性酚醛樹脂等。
藉由使用該些其他成份(D)、(E),能夠改善硬化前之黏著性及剝離性、硬化後的強度、與其他層的接著性、保存穩定性等。該些其他成份的使用量並沒有特別限定,相對於100質量份的能量線硬化型共聚物(A),可以在0~40質量份的範圍內適當地決定。
接著,下面對於能量線硬化性黏著劑將不具有能量線硬化性之聚合物成分與能量線硬化性之多官能單體以及/或者寡聚物之混合物作為主要成分之情況進行說明。
作為不具有能量線硬化性之聚合物成份,例如可以使用與前述丙烯酸系共聚物(a1)相同的成份、和不將含官能基單體作為構成單位而將(甲基)丙烯酸酯單體或其衍生物作為構成單位之丙烯酸系共聚物等。能量線硬化性樹脂組成物中之不具有能量線硬化性之聚合物成份的含量為20~99.9質量%為較佳,30~80質量%尤為佳。
作為能量線硬化性之多官能單體以及/或者寡聚物,可以選擇與上述成分(B)相同者。不具有能量線硬化性之聚合物成分與能量線硬化性之多官能單體以及/或者寡聚物之混合比,相對於聚合物成分100質量份,多官能單體以及/或者寡聚物較佳為10~150質量份,特別佳為25~100質量份。
在這種情況下,與上述同樣,也可以適當混合光聚合引發劑(C)及交聯劑(E)。
另一方面,當使用丙烯酸系黏著劑作為構成黏著劑層22之黏著劑時,作為該丙烯酸系黏著劑,例如可以使用
與前述丙烯酸系共聚物(a1)相同的成份、和不將含官能基單體作為構成單位而將(甲基)丙烯酸酯單體或其衍生物作為構成單位之丙烯酸系共聚物等。並且,此時,丙烯酸系黏著劑可以藉由與前述交聯劑(E)相同的交聯劑形成交聯結構。
在此,構成黏著劑層22之黏著劑在130℃下之儲存彈性模量為1.0×105~8.0×106Pa為較佳,3.0×105~6.5×106Pa尤為佳,5.0×105~5.0×106Pa為進一步較佳。若上述黏著劑在130℃下之儲存彈性模量如上所述比較低,則在加熱製程中亦可以將黏著劑層22與保護膜形成用薄膜3的接著力維持得較高,黏著劑層22與保護膜形成用薄膜3之間的偏離量變小,從而可以更有效地抑制保護膜形成用複合薄片1的鬆弛。藉此,能夠有效地防止基於冷卻時的收縮之保護膜形成用複合薄片1的恢復變得不徹底。另外,本說明書中之儲存彈性模量的測定方法如後述之試驗例所示。
當使用丙烯酸系黏著劑作為構成黏著劑層22之黏著劑時,該黏著劑層22可以還含有環氧樹脂。當藉由丙烯酸系黏著劑構成黏著劑層22時,與該黏著劑層22相鄰之構成保護膜形成用薄膜3之硬化性接著劑轉移到黏著劑層22,有時黏著劑層22的物性發生變化。但是,藉由黏著劑層22含有環氧樹脂,能夠防止該種硬化性接著劑的轉移所引起之物性變化。
在上述情況下,黏著劑層22中之環氧樹脂的含量相對於100質量份的丙烯酸系共聚物超過0質量份且在20質量份以下為較佳,1~17質量份尤為佳。
1-2.基材
黏著薄片2的基材21由適合於工件的加工例如半導體晶圓的切割及擴展,並且不容易藉由加熱而鬆弛之材料或即使藉由加熱而鬆弛亦容易藉由冷卻而恢復之材料構成為較佳,通常由以樹脂系的材料為主材料之薄膜(以下稱為“樹脂薄膜”)構成。
作為樹脂薄膜的具體例,可以舉出低密度聚乙烯(LDPE)薄膜、線性低密度聚乙烯(LLDPE)薄膜、高密度聚乙烯(HDPE)薄膜等聚乙烯薄膜;聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、乙烯-降冰片烯共聚物薄膜、降冰片烯樹脂薄膜等聚烯烴系薄膜;乙烯-乙酸乙烯酯共聚物薄膜、乙烯-(甲基)丙烯酸共聚物薄膜、乙烯-(甲基)丙烯酸酯共聚物薄膜等乙烯系共聚物薄膜;聚氯乙烯薄膜、氯乙烯共聚物薄膜等聚氯乙烯系薄膜;聚對苯二甲酸乙二酯薄膜、聚對苯二甲酸丁二醇酯薄膜等聚酯系薄膜;聚氨酯薄膜;聚醯亞胺薄膜;聚苯乙烯薄膜;聚碳酸酯薄膜;氟樹脂薄膜等。並且,亦可以使用該些的交聯薄膜、離聚合物薄膜等改性薄膜。上述基材21可以係由該些中之1種構成之薄膜,並且,亦可以係將該些組合兩種以上而成之積層薄膜。另外,本說明書中之“(甲基)丙烯酸”係指丙烯酸及甲基丙烯酸雙方。對於其他類似術語亦相同。
在上述中,將聚烯烴系薄膜或聚烯烴系薄膜與其他薄膜組合而成之積層薄膜為較佳,聚乙烯薄膜、聚丙烯薄膜、或將該些與其他薄膜組合而成之積層薄膜尤為佳,聚丙烯薄膜為進一步較佳。依聚烯烴系薄膜,能夠減少在切割時藉由
切割刮刀切入基材而產生之基材的碎屑(切屑)的產生。並且,由於聚丙烯薄膜具有適度的耐熱性,因此將貼附於工件之保護膜形成用複合薄片1交付於加熱製程時,具有即使在作為基材21而使用之聚丙烯薄膜產生鬆弛,亦會在冷卻時收縮而恢復原狀態之傾向。另外,由於聚丙烯薄膜具有適度的柔軟性,因此具有能夠良好地進行切割後的擴展製程及拾取製程之傾向。
上述樹脂薄膜以提高與積層於其表面之黏著劑層22的黏附性為目的,根據需要可以在單面或兩面實施基於氧化法或凹凸化法等之表面處理、或者底漆處理。作為上述氧化法,例如可以舉出電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧/紫外線照射處理等,並且,作為凹凸化法,例如可以舉出噴砂法、熱噴鍍處理法等。
基材21可以在上述樹脂薄膜中含有著色劑、阻燃劑、可塑劑、抗靜電劑、滑劑、填充劑等各種添加劑。
若在使用保護膜形成用複合薄片1之各製程中能夠適當地發揮作用,且難以藉由加熱而鬆弛或者即使鬆弛亦容易藉由冷卻而恢復,則基材21的厚度並沒有特別限定。20~450μm的範圍為較佳,25~400μm的範圍更為佳,50~350μm的範圍尤為佳。
2.保護膜形成用薄膜
保護膜形成用薄膜3由未硬化的硬化性接著劑構成為較佳。此時,在保護膜形成用薄膜3上重疊半導體晶圓等工件之後,使保護膜形成用薄膜3硬化,藉此能夠將保護膜牢固地接著於工件,且能夠將具有耐久性之保護膜形成於晶片等。不論
在硬化性接著劑未硬化之階段,還係在硬化後的階段,均能夠藉由雷射光照射,對該保護膜形成用薄膜3良好地進行印字。
保護膜形成薄膜3,較佳為在常溫下具有黏合性,或者藉由加熱發揮黏合性。藉此,如上所述一樣在保護膜形成薄膜3中重合半導體晶圓等工件時,能夠使兩者貼合。因此,能夠在使保護膜形成薄膜3硬化前確切地實施定位,保護膜形成用複合薄片1之操作性變得容易。
構成具有如上所述之特性之保護膜形成薄膜3之硬化性接著劑,較佳為含有硬化性成分與結合劑聚合物成分。作為硬化性成分,可以使用熱硬化性成分、能量線硬化性成分、或者該等之混合物,但若考慮保護膜形成薄膜3之硬化方法及硬化後之耐熱性,使用熱硬化性成分為特別佳。
作為熱硬化性成份,例如可以舉出環氧樹脂、酚醛樹脂(低分子量者)、三聚氰胺樹脂、尿素樹脂、聚酯樹脂、氨酯樹脂、丙烯酸樹脂、聚醯亞胺樹脂、苯並噁嗪樹脂等及該些的混合物。該些之中,使用環氧樹脂、苯酚樹脂及該些的混合物為較佳。作為熱硬化性成份,通常可以使用分子量為300~1萬左右者。
環氧樹脂具有一旦被加熱則立體網狀化,形成牢固的塗膜之特性。作為此類環氧樹脂,使用著先前公知的各種環氧樹脂,但通常以分子量300~2500左右者為佳。此外,較佳為以將分子量300~500之常態下為液狀之環氧樹脂與分子量400~2500,特別佳為500~2000之常溫下為固體之環氧樹脂混合之方式使用。又,環氧樹脂之環氧當量宜為50~5000g/eq。
作為此類環氧樹脂,具體地可以列舉出脂環族環氧化物,其如雙酚A、雙酚F、間苯二酚、苯基酚醛、甲苯酚醛等酚類環氧丙基醚;丁二醇、聚乙二醇、聚丙二醇等乙醇類環氧丙基醚;鄰苯二甲酸、間苯二甲酸、四氫酞酸等羧酸之環氧丙基醚;苯胺三聚異氰酸酯等以與氮原子相結合之活性氫用環氧丙基取代之環氧丙型或烷基環氧丙型之環氧樹脂;乙烯基環己烯二環氧化合物、3,4-環氧環己基甲基-3,4-環氧環己基甲酸酯、2-(3,4-環氧基)環己基-5,5-螺環接(3,4-環氧基)環己烷-m-二噁烷等,藉由將分子內的碳-碳雙鍵例如進行氧化而導入環氧化物。除此之外,還可以使用具有聯苯骨架、二環己烯骨架、萘骨架等之環氧樹脂。
在該等之中,也可以較佳地使用雙酚系縮水甘油型環氧樹脂、o-甲苯酚醛型環氧樹脂以及苯酚酚醛型環氧樹脂。該等環氧樹脂,可以單獨使用一種,或者兩種以上組合使用。
在使用環氧樹脂之情況下,作為輔助劑,組合使用熱活化型潛在性環氧樹脂硬化劑為佳。所謂熱活化型潛在性環氧樹脂硬化劑,係指在室溫中不與環氧樹脂反應,藉由某種溫度以上之加熱而活化,與環氧樹脂反應之類型之硬化劑。熱活化型潛在性環氧樹脂硬化劑之活化方法存在,在藉由加熱之化學反應中生成活性物種(陰離子、陽離子)之方法;在室溫附近穩定分散於環氧樹脂中並在高溫中與環氧樹脂相溶.溶解,開始硬化反應之方法;在高溫中用分子篩封閉式之硬化劑進行溶析而開始硬化反應之方法;藉由微膠囊而實施之方法
等。
作為熱活化型潛在性環氧樹脂硬化劑之具體例,可以列舉出各種鎓鹽以及二元酸二醯肼化合物、二氰二胺、胺加成物硬化劑、咪唑化合物等高熔點活性氫化合物等。該等熱活化型潛在性環氧樹脂硬化劑,可以單獨使用一種,或者兩種以上組合使用。如上所述之熱活化型潛在性環氧樹脂硬化劑,相對於環氧樹脂100質量份,以0.1~20質量份之比例使用為佳,特別佳為以0.2~10質量份之比例使用,更佳為以0.3~5質量份之比例使用。
作為酚系樹脂,可以沒有特別限定地使用烷基酚、多元酚、萘酚等酚類與醛類的縮合物等具有酚系羥基之聚合物。具體可以使用苯酚酚醛樹脂、鄰甲酚酚醛樹脂、對甲酚酚醛樹脂、叔丁基苯酚酚醛樹脂、二環戊二烯甲酚樹脂、聚對乙烯基酚醛樹脂、雙酚A型酚醛樹脂、或者該些的改性物等。
該等酚系樹脂所包含之酚羥基,藉由加熱容易與上述環氧樹脂之環氧基加成反應,能夠形成耐衝擊性較高之硬化物。為此,可以組合使用環氧樹脂與酚系樹脂。
結合劑聚合物成份係以對保護膜形成用薄膜3賦予適度的黏性或者提高保護膜形成用複合薄片1的操作性等為目的而配合。結合劑聚合物的重量平均分子量通常在3萬~200萬的範圍,5萬~150萬的範圍為較佳,10萬~100萬的範圍尤為佳。藉由分子量為3萬以上,保護膜形成用薄膜3的薄膜形成變得充份,藉由分子量為200萬以下,可以良好地維持與其他成份的相容性,能夠均勻地進行保護膜形成用薄膜3的薄膜
形成。作為該種結合劑聚合物,例如可以使用丙烯酸系聚合物、聚酯樹脂、苯氧樹脂、氨酯樹脂、矽酮樹脂、橡膠系聚合物等,使用丙烯酸系聚合物尤為佳。
作為丙烯酸系聚合物,可以列舉出例如由從(甲基)丙烯酸酯單體與(甲基)丙烯酸衍生物導入之構成單位構成之(甲基)丙烯酸酯共聚物。此處,作為(甲基)丙烯酸酯單體,較佳為烷基之碳數為1~18之(甲基)丙烯酸烷基酯,例如可以使用(甲基)丙烯酸甲基、(甲基)丙烯酸乙基、(甲基)丙烯酸丙基、(甲基)丙烯酸丁基等。又,作為(甲基)丙烯酸衍生物,可以列舉出例如(甲基)丙烯酸、(甲基)丙烯酸環氧丙基、(甲基)丙烯酸羥乙基等。
在上述之中,若將甲基丙烯酸縮水甘油酯等用作構成單位而將縮水甘油基導入丙烯酸系聚合物,則與前述之作為熱硬化性成份之環氧樹脂的相容性得到提高,保護膜形成用薄膜3的硬化後的玻璃化轉變溫度(Tg)升高,從而耐熱性得到提高。並且,若在上述之中將丙烯酸羥乙酯等用作構成單位而將羥基導入丙烯酸系聚合物,則能夠控制對工件之黏附性或黏著物性。另外,當將甲基丙烯酸縮水甘油酯等用作構成單位而將縮水甘油基導入丙烯酸系聚合物時之、該丙烯酸系聚合物或具有環氧基之苯氧樹脂具有熱硬化性。但是,在本實施形態中,設該種具有熱硬化性之聚合物亦相當於結合劑聚合物成份而並非相當於熱硬化性成份者。
在作為結合劑聚合物使用丙烯酸系聚合物之情況下,該聚合物之重量平均分子量,較佳為10萬以上,特別佳
為15萬~100萬。丙烯酸系聚合物之玻璃轉化溫度,通常為20℃以下,較佳為-70~0℃左右,在常溫(23℃)下具有黏合性。
熱硬化性成分與結合劑聚合物成分之混合比率,相對於結合劑聚合物成分100重量份,較佳為混合50~1500重量份之熱硬化性成分,特別佳為混合70~1000重量份,更佳為混合80~800重量份。如果以這樣的比例混合熱硬化性成分與結合劑聚合物成分,則在硬化前即顯示適度之黏性,能夠穩定地進行黏貼作業,並且在硬化後,可以得到塗膜強度良好之保護膜。
保護膜形成用薄膜3含有填充劑和/或著色劑為較佳。若保護膜形成用薄膜3含有填充劑,則能夠將硬化後的保護膜的硬度維持得較高,並且能夠提高耐濕性。並且,亦能夠將所形成之保護膜表面的光澤調整為所希望的值。並且,能夠使硬化後的保護膜的熱膨脹係數接近半導體晶圓的熱膨脹係數,藉此能夠減少加工中途的半導體晶圓的翹曲。另一方面,若保護膜形成用薄膜3含有填充劑和/或著色劑,則亦能夠進行視認性優異之雷射印字。
作為填充劑,可以列舉出晶性矽石、熔融矽石、合成矽石等矽石及氧化鋁、玻璃氣球等無機填充劑。其中,以合成矽石為佳,特別佳為極力去除成為半導體裝置之誤動作之主要原因之α射線之線源之類型之合成矽石。作為填充劑之形狀,可以為球形、針狀、不定形的任意一種。
又,作為添加至保護膜形成薄膜3之填充劑,除上述無機填充劑之外,也可以混合有功能性填充劑。作為功能
性填充劑,可以列舉出例如以抗靜電劑賦予為目的之金、銀、銅、鎳、鋁、不鏽鋼、碳、陶瓷、或者用銀包覆鎳、鋁等之導電性填充劑以及以賦予導熱性為目的之金、銀、銅、鎳、鋁、不鏽鋼、矽、鍺等金屬材料以及該等之合金等導熱性填充劑等。
作為著色劑,可以使用無機系顏料、有機系顏料、有機系染料等公知者。
作為無機系顏料,可以列舉出例如碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、白金系色素、ITO(銦錫氧化物)系色素、ATO(銻錫氧化物)系色素等。
作為有機系顏料以及有機系染料,可以列舉出例如銨(aminium)系色素、花青(cyanines)系色素、部花青素系色素、克酮酸系色素、方酸菁系色素、甘菊藍系色素、聚次甲基系色素、萘醌系色素、吡喃系色素、酞花青系色素、萘菁系色素、萘內醯胺系色素、非水溶性偶氮系色素、縮合非水溶性偶氮系色素、靛青系色素、苝酮(perinone)系色素、苝(perylene)系色素、雙噁嗪系色素、煃吖啶酮系色素、異吲哚啉酮系色素、喹啉黃系色素、聚吡咯系色素、硫靛系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫酚金屬錯合物系色素、吲哚酚系色素、三芳基甲烷系色素、蒽醌系色素、萘酚系色素、次甲基偶氮系色素、苯並咪唑酮系色素、皮蒽酮系色素以及士林系色素等。為調整至作為目的之透光度,可以將該等顏料或染料適當混合使用。
從基於雷射光照射之印字性的觀點考慮,在上述
之中,使用顏料為較佳,使用無機系顏料尤為佳。在無機系顏料中,碳黑尤為佳。碳黑通常係黑色,但藉由雷射光照射而削取之部份呈白色,對比度差較大,因此雷射印字之部份的視認性非常優異。
保護膜形成用薄膜3中之填充劑及著色劑的配合量只要適當調整為發揮所希望的作用即可。具體而言,填充劑的配合量通常為40~80質量%為較佳,50~70質量%尤為佳。並且,著色劑的配合量通常為0.001~5質量%為較佳,0.01~3質量%尤為佳,0.1~2.5質量%為進一步較佳。
保護膜形成薄膜3也可以含有耦合劑。由於含有耦合劑,在保護膜形成薄膜3硬化後,不損壞保護膜之耐熱性而能夠提高保護膜與工件之間之接著性及密接性,並且還能夠提高抗水性(耐濕熱性)。作為耦合劑,從其通用性與成本效益等考慮,較佳為矽烷耦合劑。
作為矽烷耦合劑,可以列舉出例如γ-(甲基丙烯醯氧)丙基三甲氧基矽烷、γ-(環氧丙氧基)丙基甲基二乙氧基矽烷、β-(3,4-環氧環已基)乙基三甲氧基矽烷、γ-(甲基丙烯醯氧基)丙基三甲氧基矽烷、γ-氨丙基三乙氧基矽烷、N-6-(胺乙基)-γ-氨丙基三甲氧基矽烷、N-6-(胺乙基)-γ-氨丙基甲基二乙氧基矽烷、N-苯基-γ-氨丙基三甲氧基矽烷、γ-脲基丙基三乙氧基矽烷、γ-巰丙基三甲氧基矽烷、γ-巰丙基二甲氧基矽烷、雙-[3-(三乙氧基矽)丙基]-四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧矽烷、咪唑矽烷等。該等可以單獨使用一種,或者兩種以上
混合使用。
為調節硬化前之內聚力,保護膜形成薄膜3也可以含有有機多元官能異氰酸酯化合物、有機多元官能亞胺化合物、有機金屬鉗合物等交聯劑。又,為抑制靜電並提高晶片之可靠性,保護膜形成薄膜3也可以含有抗靜電劑。此外,為提高保護膜之阻燃性能,並提高作為封裝之可靠性,保護膜形成薄膜3還可以含有磷酸化合物、溴化物、含磷化物等阻燃劑。
為使作為保護膜之功能有效地發揮,保護膜形成薄膜3之厚度,較佳為3~300μm,特別佳為5~250μm,更佳為7~200μm。
此處,在使保護膜形成薄膜3與黏著薄片2中之黏著劑層22接觸之狀態下硬化而形成保護膜之情況下,該保護膜中之黏著薄片2一側之表面的光亮值,較佳為25以上,特別佳為30以上。另外,本說明書中之光亮值為依據JIS Z8741在實測角60°下使用光澤計測定之值。由於在晶片上形成之保護膜表面之光亮值在上述範圍內,故美感良好,並且藉由雷射印字形成之印字之清晰度良好。
3.治具用黏著劑層
本實施形態之保護膜形成用複合薄片1在保護膜形成用薄膜3的與黏著薄片2側相反一側的周緣部具有治具用黏著劑層4。藉由如此具有治具用黏著劑層4,能夠與保護膜形成用薄膜3的黏著力無關地將保護膜形成用複合薄片1貼附於環狀框架等治具而可靠地進行固定。
本實施形態中之治具用黏著劑層4形成為環狀。
在此,如第2圖所示,治具用黏著劑層4形成為當保護膜形成用複合薄片1的保護膜形成用薄膜3貼附於工件5(第2圖中平面視為圓形,但並不限定於此)時,該工件5的主要外周緣(例如,當工件5為半導體晶圓時,除用於對結晶取向進行特定之缺口等以外之外周緣)與治具用黏著劑層4的內周緣在平面方向的間隙w1小於10mm為較佳。當工件5為半導體晶圓時,工件5的主要外周緣通常為圓形。當治具用黏著劑層4的內周緣形成為圓形時,通常半導體晶圓貼合成其主要外周緣和治具用黏著劑層4的內周緣成為同心圓。此時,該工件5的主要外周緣與治具用黏著劑層4的內周緣在平面方向的間隙w1恆定。
保護膜形成用複合薄片1具有在上述間隙部份變鬆弛之傾向,但藉由上述間隙w1較小至小於10mm,當將貼附於工件及環狀框架等治具之保護膜形成用複合薄片1交付於加熱製程時,治具用黏著劑層4具有減小基於工件重量之負荷且促進鬆弛的恢復之傾向。藉此,保護膜形成用複合薄片1的鬆弛更有效地得到抑制。
從該種觀點考慮,上述間隙w1為0~8mm更為佳,1~7mm尤為佳。並且,當工件5為半導體晶圓且治具用黏著劑層4的內周緣形成為圓形時,若將治具用黏著劑層4的內周緣的直徑設為d1、將工件5的主要外周緣的直徑設為d2時,(d1-d2)小於20mm為較佳,0~16mm更為佳,2~14mm尤為佳。
另外,當構成黏著劑層22之黏著劑在130℃下之
儲存彈性模量為1.0×105~8.0×106Pa時,如上所述,即使間隙w1小於10mm,亦可以以與上述相同的水準有效地防止保護膜形成用複合薄片1的鬆弛。
治具用黏著劑層4可以由單層構成,亦可以由2層以上的多層構成,多層時,芯材介於其間之構成為較佳。
從相對於環狀框架等治具之黏著力的觀點考慮,構成治具用黏著劑層4之黏著劑由非能量線硬化性的黏著劑構成為較佳。作為非能量線硬化性的黏著劑,具有所希望的黏著力及再剝離性者為較佳,例如可以使用丙烯酸系黏著劑、橡膠系黏著劑、矽酮系黏著劑、氨酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等,其中,黏著力及再剝離性的控制輕鬆的丙烯酸系黏著劑為較佳。
作為芯材,通常可以使用樹脂薄膜,其中,聚氯乙烯薄膜、氯乙烯共聚物薄膜等聚氯乙烯系薄膜為較佳,聚氯乙烯薄膜尤為佳。聚氯乙烯薄膜具有即使進行加熱而軟化亦容易在冷卻時恢復之性質。芯材的厚度為2~200μm為較佳,5~100μm尤為佳。
從相對於環狀框架等治具之接著性的觀點考慮,治具用黏著劑層4的厚度為5~200μm為較佳,10~100μm尤為佳。
4.剝離薄片
保護膜形成用複合薄片1可以在其保護膜形成用薄膜3及治具用黏著劑層4側(第1圖中的上側)具有剝離薄片。依該種剝離薄片,在使用保護膜形成用複合薄片1之前期間,能夠
保護保護膜形成用薄膜3及治具用黏著劑層4。
剝離薄片之構成為任意,可以舉例出經剝離劑等進行剝離處理之塑膠薄膜。作為塑膠薄膜之具體例,可以列舉出聚對酞酸乙二酯、聚對苯二甲酸丁二醇酯、聚乙烯萘二甲酸等聚酯纖維薄膜、以及聚丙烯或聚乙烯等聚烯烴薄膜。作為剝離劑,可以使用矽膠系、氟系、長鏈烷基系等,但在該等之中,以廉價且能夠得到穩定的性能之矽膠系為佳。對於剝離薄片之厚度並不特別限制,但通常為20~250μm左右。
5.保護膜形成用複合薄片的製造方法
保護膜形成用複合薄片1藉由分別製作包含保護膜形成用薄膜3之第1積層體、包含黏著薄片2之第2積層體、以及包含治具用黏著劑層4之第3積層體之後,使用第1積層體及第2積層體積層保護膜形成用薄膜3和黏著薄片2,並且使用第3積層體積層治具用黏著劑層4而製造為較佳,但並非限定於此者。
為製造第一積層體,需要在第一剝離薄片之剝離面(具有剝離性之面;通常為實施剝離處理之面,但並不限定於此)上形成保護膜形成薄膜3。具體地說,製備含有構成保護膜形成薄膜3之硬化性接著劑、以及根據需要進而含有溶劑之保護膜形成薄膜用塗敷劑,藉由輥式塗佈機、刀式塗佈機、輥刀式塗佈機、氣動刮刀塗佈機、壓鑄模塗佈機、塗佈棒、凹板塗佈機、簾塗佈機等塗佈機向第一剝離薄片之剝離面塗敷並使其乾燥,從而形成保護膜形成薄膜3。接著,向保護膜形成薄膜3之露出面疊壓第二剝離薄片之剝離面,得到保護膜形成
薄膜3被夾持於兩枚剝離薄片之間而成之積層體(第一積層體)。
為製造第二積層體,需要在剝離薄片之剝離面上塗敷含有構成黏著劑層22之黏著劑、以及根據需要進而含有溶劑之黏著劑層用塗敷劑並使其乾燥而形成黏著劑層22。然後,向黏著劑層22之露出面壓著基材21,得到由黏著薄片2與剝離薄片構成之積層體(第二積層體),而上述黏著薄片2由基材21及黏著劑層22構成。
在此,當黏著劑層22由能量線硬化性黏著劑構成時,可以對黏著劑層22照射能量線而使能量線硬化性黏著劑硬化。並且,當黏著劑層22由多層構成且與保護膜形成用薄膜3接觸之層由能量線硬化性黏著劑構成時,亦可以對該接觸層照射能量線而使能量線硬化性黏著劑硬化。
作為能量線,通常使用紫外線、電子射線等。能量線之照射量根據能量線之種類而不同,例如,在紫外線之情況下,光通量以50~1000mJ/cm2為佳,特別佳為100~500mJ/cm2。又,在電子射線之情況下,以10~1000krad左右為佳。
當治具用黏著劑層4為單層時,為了製造第3積層體而在第1剝離薄片的剝離面形成治具用黏著劑層4。具體而言,製備含有構成治具用黏著劑層4之黏著劑、以及根據需要進一步含有溶劑之治具用黏著劑層的塗佈劑,將其塗佈於第1剝離薄片的剝離面並使其乾燥,從而形成治具用黏著劑層4。接著,在治具用黏著劑層4的露出面疊置並壓著第2剝離薄片
的剝離面,從而得到治具用黏著劑層4夾持於兩片剝離薄片而成之積層體(第3積層體)。
當治具用黏著劑層4具有芯材時,為了製造第3積層體,例如在第1剝離薄片的剝離面形成第1治具用黏著劑層,並在該第1治具用黏著劑層上積層芯材。並且,在第2剝離薄片的剝離面形成第2治具用黏著劑層。而且,重疊第2治具用黏著劑層和第1治具用黏著劑層上的芯材並壓著兩個積層體。藉此,得到具有芯材之治具用黏著劑層4夾持於兩片剝離薄片而成之積層體(第3積層體)。
如上進行操作而得到第1積層體、第2積層體及第3積層體之後,剝離第1積層體中之第2剝離薄片,並且剝離第2積層體中之剝離薄片,重疊在第1積層體中露出之保護膜形成用薄膜3和在第2積層體中露出之黏著薄片2的黏著劑層22並進行壓著(第4積層體)。
另一方面,對於第3積層體,保留第1剝離薄片而半切第2剝離薄片及治具用黏著劑層4的內周緣。適當去除第2剝離薄片及藉由半切而產生之多餘部份(圓形部份)的治具用黏著劑層4即可。而且,從第4積層體剝離第1剝離薄片,重疊所露出之保護膜形成用薄膜3和在第3積層體中露出之治具用黏著劑層4並進行壓著。之後,保留第3積層體中之第1剝離薄片而半切保護膜形成用複合薄片1的外周緣。
如此進行操作而得到在保護膜形成用複合薄片1上積層有剝離薄片者,前述保護膜形成用複合薄片1由如下構成:黏著薄片2,在基材21之上積層黏著劑層22而成;保護
膜形成用薄膜3,積層於黏著薄片2的黏著劑層22側;及治具用黏著劑層4,積層於保護膜形成用薄膜3中與黏著薄片2相反一側的周緣部。此時,剝離薄片積層於治具用黏著劑層4中與保護膜形成用薄膜3相反一側。
具有如上構成之保護膜形成用複合薄片1的保護膜形成用薄膜3和黏著薄片2的大小及形狀能夠設為相同,因此與該些的大小或形狀不同者相比,半切製程減少,能夠簡單地進行製造。
並且,在具有如上構成之保護膜形成用複合薄片1中,能夠使呈凸之治具用黏著劑層4的外周緣位於與保護膜形成用複合薄片1整體的外周緣相同的位置,因此當捲取載持有複數個本實施形態之保護膜形成用複合薄片1之長形的剝離薄片(工序薄膜)時,具有不易產生所謂的捲痕的形成之優點。
6.保護膜形成用複合薄片的使用方法
以下,作為一例,說明使用本實施形態之保護膜形成用複合薄片1,由作為工件之半導體晶圓製造帶有保護膜之晶片之方法。首先,如第3圖所示,將保護膜形成用薄膜3貼附於半導體晶圓5,並且將治具用黏著劑層4貼附於環狀框架6。當將保護膜形成用薄膜3貼附於半導體晶圓5時,可以根據需要對保護膜形成用薄膜3進行加熱而使其發揮黏著性。
接著,使保護膜形成用薄膜3硬化而形成保護膜。當保護膜形成用薄膜3為熱硬化性接著劑時,在規定的溫度下對保護膜形成用薄膜3進行適當時間的加熱,之後進行冷卻。此時,由於本實施形態之保護膜形成用複合薄片1的鬆弛有效
地得到抑制,因此成為對之後的製程帶來障礙之可能性較低者。
對於硬化前的保護膜形成用薄膜3或硬化後的保護膜形成用薄膜3(保護膜),可以根據需要進行雷射印字。之後,按照常規方法切割半導體晶圓5,從而得到具有保護膜之晶片(帶有保護膜之晶片)。而且,根據需要沿平面方向擴展黏著薄片2,從黏著薄片2拾取帶有保護膜之晶片。由於本實施形態之保護膜形成用複合薄片1具有黏著劑層22及治具用黏著劑層4,因此可以抑制在上述切割時發生晶片飛濺,或者難以拾取切割後的晶片,或者藉由拾取而得到之晶片上發生欠缺或發生保護膜剝落。
第4圖係本發明的第2實施形態之保護膜形成用複合薄片的剖面圖。如第4圖所示,本實施形態之保護膜形成用複合薄片1A構成為包括:黏著薄片2,在基材21的一面積層黏著劑層22而成;保護膜形成用薄膜3,積層於黏著薄片2的黏著劑層22側的中央部;及治具用黏著劑層4,積層於黏著薄片2的黏著劑層22側的周緣部。
在本實形態中,如第4圖所示,黏著薄片2的基材21及黏著劑層22形成為相同的大小及形狀,平面視為圓形,但本發明並非限定於此者。另一方面,保護膜形成用薄膜3形成為在面方向上與工件大致相同或者稍微大於工件,且形成為在面方向上小於黏著薄片2。並且,在本實形態中,如第4圖所示,治具用黏著劑層4形成為環狀,平面視時,其外周
緣位於與黏著薄片2及保護膜形成用薄膜3的外周緣相同的位置,但本發明並非限定於此者。
本實施形態之保護膜形成用複合薄片1A中之各層的材料和層厚、以及保護膜形成用薄膜3以外的大小與第1保護膜形成用複合薄片1相同。因而,本實施形態之保護膜形成用複合薄片1A亦可以與第1保護膜形成用複合薄片1同樣有效地抑制加熱製程及冷卻製程中之鬆弛,並且能夠良好地進行切割和拾取。
本實施形態之保護膜形成用複合薄片1A基本上能夠與第1保護膜形成用複合薄片1同樣地進行製造,但需要進行半切第4積層體中之保護膜形成用薄膜3的外周緣並去除外側部份之工序。
當使用本實施形態之保護膜形成用複合薄片1A時,如第5圖所示,將保護膜形成用薄膜3貼附於半導體晶圓5,並且將治具用黏著劑層4貼附於環狀框架6。之後,能夠與第1保護膜形成用複合薄片1同樣地製造帶有保護膜之晶片。
以上說明之實施方式,其係為使對本發明之理解容易而記載者,而並非為限定本發明而記述。因此,上述實施方式中所揭示之各要素,還包含屬於本發明之技術範圍之所有設計變更與等價物。
例如,治具用黏著劑層4可以係由基材和黏著劑層構成之2層構成。此時,構成為在發揮黏著性之保護膜形成用薄膜3上接著上述基材,且在環狀框架等治具上貼附上述黏著劑層為較佳。
以下,根據實施例等更具體地說明本發明,但是本發明之範圍並不僅限於該等實施例等。
在實施例1中,如下所述,製造如圖1所示之保護膜形成用複合薄片1。
(1)包含保護膜形成薄膜之第一積層體之製作
混合以下(a)~(f)之成分,為使固體含量濃度達到50質量%而用丁酮稀釋,製備保護膜形成薄膜用塗敷劑。
(a)結合劑聚合物:(甲基)丙烯酸酯共聚物(對丙烯酸丁酯55質量份、丙烯酸甲酯10質量份、2-羥丙基丙烯酸酯15質量份、以及縮水甘油甲基丙烯酸酯20質量份進行共聚而得到之共聚物,重量平均分子量:80萬)17質量份(固體含量換算,以下相同)
(b)熱硬化性成分:混合環氧樹脂(液狀雙酚A型環氧樹脂(環氧當量180-200)60質量份、固體雙酚A型環氧樹脂(環氧當量800-900)10質量份、以及雙環戊二烯型環氧樹脂(環氧當量274-286)30質量份之混合物)17質量份
(c)硬化劑:二氰亞胺(旭電化工業株式會社製造:艾迪科硬化劑3636AS)0.3質量份、以及2-苯基-4,5-二(羥甲基)咪唑(四國化成工業株式會社製造:Curezol 2PHZ)0.3質量份
(d)著色劑:碳黑(三菱化學株式會社製造:#MA650,平均粒徑:28nm)2質量份
(e)矽烷耦合劑:γ-(甲基丙烯醯氧)丙基三甲氧基矽烷(信越化學工業株式會社製造:KBM-403,甲氧當量:12.7mmol/g,分子量:236.3)0.4質量份
(f)填充劑:無定型矽石填充劑(平均粒徑:3μm)63質量份
準備了在厚度38μm之聚對酞酸乙二酯(PET)薄膜之一面形成有矽膠系剝離劑層之第一剝離薄片(琳得科公司製造:SP-PET381031)與在厚度38μm之PET薄膜之一面形成有矽膠系剝離劑層之第二剝離薄片(琳得科公司製造:SP-PET381130)。
最先,為使最終得到之保護膜形成薄膜之厚度達到25μm,在第一剝離薄片之剝離面上,利用刀式塗佈機塗敷前述保護膜形成薄膜用塗敷劑,並使其乾燥,形成保護膜形成薄膜。然後,在保護膜形成薄膜上重疊第二剝離薄片之剝離面並將兩者貼合,得到由第一剝離薄片與保護膜形成薄膜(厚度:25μm)以及第二剝離薄片構成之積層體。該積層體較長,回捲而成捲收體。
(2)包含黏著薄片之第2積層體的製作
混合以下(g)~(i)的成份並利用甲乙酮進行稀釋,以使固形物濃度成為25質量%,從而製備黏著劑層用塗佈劑。
(g)黏著主劑:能量線硬化型丙烯酸系共聚物(使2-乙基己基丙烯酸酯80質量份及2-羥基乙基丙烯酸酯20質量份共聚合之後,使相對於2-羥基乙基丙烯酸酯1摩爾相當於0.5摩爾之量的甲基丙烯酸2-異氰酸基乙酯與2-羥基乙基丙烯酸酯所
具有之羥基發生反應而得到之共聚物,重量平均分子量:60萬)100質量份
(h)環氧樹脂:雙酚A型環氧樹脂(Mitsubishi Chemical Corporation製,jER828)2.1質量份
(i)光聚合引發劑:1-羥基-環己基-苯基-酮(BASF社製,IRGACURE 184)3.2質量份
準備在厚度38μm的PET薄膜的單面形成矽酮系的剝離劑層而成之剝離薄片(Lintec Corporation製:SP-PET381031)和作為基材之聚丙烯薄膜(Mitsubishi Plastics,Inc.製,厚度:80μm)。
首先,藉由刮刀式塗佈機,在剝離薄片的剝離面上以最終所得到之黏著劑層的厚度成為5μm之方式塗佈前述黏著劑層用塗佈劑,並進行乾燥而形成黏著劑層。之後,在黏著劑層上貼合上述基材,得到由以基材及黏著劑層構成之黏著薄片和剝離薄片構成之第2積層體。該積層體為長形。從剝離薄片側對該積層體的黏著劑層照射紫外線(照度:140mW/cm2,光量:510mJ/cm2),使黏著劑層硬化。之後,回捲積層體而作成捲收體。
(3)包含治具用黏著劑層4之第3積層體的製作
混合以下(j)及(k)的成份並利用甲苯進行稀釋,以使固形物濃度成為15質量%,從而製備黏著劑層用塗佈劑。
(j)黏著主劑:丙烯酸系共聚物(使丙烯酸丁酯69.5質量份、丙烯酸甲酯30質量份、2-羥基乙基丙烯酸酯0.5質量份共聚合而得到之共聚物,重量平均分子量:50萬)100質量份
(k)交聯劑:3官能TDI系異氰酸酯化合物(TOYOCHEM Co.,Ltd.製,BHS8515)5質量份
準備在厚度38μm的PET薄膜的單面形成矽酮系的剝離劑層而成之第1及第2剝離薄片(Lintec Corporation製:SP-PET381031)和作為芯材之聚氯乙烯薄膜(Okamoto Industries,Inc.製,厚度:50μm)。
首先,藉由刮刀式塗佈機,在第1剝離薄片的剝離面上以最終所得到之黏著劑層的厚度成為5μm之方式塗佈前述黏著劑層用塗佈劑,並進行乾燥而形成第1黏著劑層。之後,在第1黏著劑層上貼合上述芯材,得到由芯材、第1黏著劑層及第1剝離薄片構成之積層體A。該積層體A為長形,回捲而作成捲收體。
接著,藉由刮刀式塗佈機,在第2剝離薄片的剝離面上以最終所得到之黏著劑層的厚度成為5μm之方式塗佈前述黏著劑層用塗佈劑,並進行乾燥而形成第2黏著劑層。之後,在第2黏著劑層上貼合上述積層體A中之芯材的露出之面,得到由第1剝離薄片/第1黏著劑層/芯材/第2黏著劑層/第2剝離薄片構成之第3積層體。該積層體為長形,回捲而作成捲收體。
(4)第4積層體的製作
從上述(1)中得到之第1積層體剝離第2剝離薄片而使保護膜形成用薄膜露出。另一方面,從上述(2)中得到之第2積層體剝離剝離薄片而使黏著劑層露出。在該黏著劑層上,以與上述保護膜形成用薄膜接觸之方式貼合第1積層體和第2積
層體,得到積層由基材及黏著劑層構成之黏著薄片、保護膜形成用薄膜及第1剝離薄片而成之第4積層體。
(5)保護膜形成用複合薄片的製作
從上述(3)中得到之第3積層體剝離第2剝離薄片而保留第1剝離薄片,並半切治具用黏著劑層的內周緣,去除內側的圓形部份。此時,治具用黏著劑層的內周緣的直徑(d1)設為160mm。
從上述(4)中得到之第4積層體剝離第1剝離薄片,重疊露出之保護膜形成用薄膜和在第3積層體中露出之治具用黏著劑層並進行壓著。之後,保留第3積層體中之第1剝離薄片而半切保護膜形成用複合薄片的外周緣,去除外側部份。此時,保護膜形成用複合薄片的外周緣的直徑設為205mm。
如此進行操作而得到由以下構成之保護膜形成用複合薄片:黏著薄片,在基材之上積層黏著劑層(厚度:5μm)而成;保護膜形成用薄膜,積層於黏著薄片的黏著劑層側;環狀的治具用黏著劑層(d1:160mm),積層於保護膜形成用薄膜中與黏著薄片相反一側的周緣部;及剝離薄片,積層於治具用黏著劑層中與保護膜形成用薄膜相反一側。
將環狀的治具用黏著劑層的內周緣的直徑(d1)設為170mm,除此以外,與實施例1同樣地製造保護膜形成用複合薄片。
將環狀的治具用黏著劑層的內周緣的直徑(d1)設為
170mm,並將黏著劑層用塗佈劑改變為混合以下(l)及(m)的成份並利用甲乙酮進行稀釋以使固形物濃度成為25質量%者,且未對積層體的黏著劑層照射紫外線,除此之外,與實施例1同樣地製造保護膜形成用複合薄片。
(l)黏著主劑:丙烯酸系共聚物(使丙烯酸丁酯59質量份、2-乙基己基丙烯酸酯36質量份及2-羥基乙基丙烯酸酯5質量份共聚合而得到之共聚物,重量平均分子量:70萬)100質量份
(m)交聯劑:3官能亞二甲苯二異氰酸酯化合物(Mitsui Takeda Chemicals,Inc.製,D-110N)21.4質量份
將黏著劑層用塗佈劑改變為混合以下(n)及(o)的成份並利用甲乙酮進行稀釋以使固形物濃度成為25質量%者,除此以外,與實施例3同樣地製造保護膜形成用複合薄片。
(n)黏著主劑:丙烯酸系共聚物(使2-乙基己基丙烯酸酯40質量份、乙酸乙烯40質量份及2-羥基乙基丙烯酸酯20質量份共聚合而得到之共聚物,重量平均分子量:70萬)100質量份
(o)交聯劑:3官能亞二甲苯二異氰酸酯化合物(Mitsui Takeda Chemicals,Inc.製,D-110N)40.1質量份
將黏著劑層用塗佈劑改變為混合以下(p)、(q)及(r)的成份並利用甲乙酮進行稀釋以使固形物濃度成為25質量%者,除此以外,與實施例3同樣地製造保護膜形成用複合薄片。
(p)黏著主劑:丙烯酸系共聚物(使2-乙基己基丙烯酸酯60質量份、甲基丙烯酸甲酯30質量份及2-羥基乙基丙烯酸酯10質量份共聚合而得到之共聚物,重量平均分子量:50萬)100質量份
(q)交聯劑:3官能亞二甲苯二異氰酸酯化合物(Mitsui Takeda Chemicals,Inc.製,D-110N)40.1質量份
(r)環氧樹脂:雙酚A型環氧樹脂(Mitsubishi Chemical Corporation製,jER828)15.6質量份
將黏著劑層的厚度設為11μm,除此以外,與實施例1同樣地製造保護膜形成用複合薄片。
使用實施例1的基材單體來代替實施例1中之第2積層體,除此以外,與實施例1同樣地製造保護膜形成用複合薄片。
從實施例及比較例中製造之保護膜形成用複合薄片剝離剝離薄片,如第3圖所示,將所得到之保護膜形成用複合薄片貼附於矽晶圓(#2000研削,外周緣的直徑(d2):150mm,厚度:350μm,質量:14g)及環狀框架(不銹鋼製,內徑195mm)。此時,以治具用黏著劑層的內周緣、環狀框架的內周緣及矽晶圓的外周緣成為同心圓之方式貼附上述保護膜形成用複合薄片。以該狀態,在130℃下進行2小時的加熱而使保護膜形成用薄膜硬化之後,冷卻至室溫。
而且,測定位於環狀框架的下側之保護膜形成用
複合薄片的下端面的高度與位於半導體晶圓的下側之保護膜形成用複合薄片的下端面的高度之差(沉入量:mm),將其作為鬆弛量而進行評價。評價基準如下。將結果示於表1。
A:小於0.5mm
B:0.5mm以上且小於2.0mm
C:2.0mm以上
上述結果,關於比較例1的保護膜形成用複合薄片,由於大幅鬆弛,因此未進行之後的試驗。
將試驗例1中製作之加熱/冷卻製程後的帶有晶圓/環狀框架之保護膜形成用複合薄片的矽晶圓切割成5mm×5mm的晶片尺寸,得到帶有保護膜之晶片。目視判斷在該切割時之晶片飛濺的個數及切屑的有無,並藉由以下的基準進行評價。將結果示於表1。
A:沒有晶片飛濺。
B:發生1~4個晶片飛濺。
C:發生5個以上的晶片飛濺。
A:沒有切屑。
B:產生切屑。
從試驗例2中進行了切割之保護膜形成用複合薄片上拾取帶有保護膜之晶片。此時,從保護膜形成用複合薄片的基材
側,藉由針進行頂推。對於拾取而得到之帶有保護膜之晶片,進行發生晶片欠缺或保護膜剝落者的個數(NG數量)的計數,並藉由以下的基準對拾取進行評價。將結果示於表1。
A:無觀察到晶片欠缺或保護膜剝落之晶片。
B:觀察到晶片欠缺或保護膜剝落之晶片有1~2個。
C:觀察到晶片欠缺或保護膜剝落之晶片有3個以上。
當與試驗例3同樣地進行拾取時,藉由推拉力計(AIKOH ENGINEERING社製,RX-1)測定拾取所需之力(N)。將對於20個晶片之測定值的平均值作為拾取力,並藉由以下的基準進行評價。將結果示於表1。
A:小於3.0N
B:3.0N以上且小於5.0N
C:5.0N以上
將實施例及比較例中使用之黏著劑塗佈於剝離薄片的剝離面而形成黏著劑層,並將另行準備之剝離薄片的剝離面壓著於露出之黏著劑層,從而製作由剝離薄片/黏著劑層/剝離薄片構成之黏著薄片。從該黏著薄片剝下剝離薄片,將黏著劑層積層複數層,直至厚度成為200μm。從所得到之黏著劑層的積層體沖切30mm×4mm的矩形(厚度:200μm),將此作為測定用試料。另外,對於由實施例1(及實施例2以及比較例1)的黏著劑構成之測定用試料,與實施例1同樣地對黏著劑層照射紫外線而使黏著劑硬化。
在動態黏彈性測定裝置(ORIENTEC Co.,Ltd.製,RHEOVIBRON DDV-01FP)上,以測定間距成為20mm之方式安裝上述測定用試料,以頻率11Hz、測定溫度範圍-50~150℃、升溫速度3℃/min的條件測定儲存彈性模量(Pa)。將由測定結果得到之130℃下之儲存彈性模量示於表1。
由表1可知,實施例中製造之保護膜形成用複合薄片在加熱、冷卻製程中幾乎沒有鬆弛,並且能夠良好地進行切割及拾取。
本發明之保護膜形成用複合薄片適合用於由半導體晶圓製造具有保護膜之晶片。
Claims (6)
- 一種保護膜形成用複合薄片,包括:黏著薄片,其為在基材的一面側積層黏著劑層而成;保護膜形成用薄膜,其積層於前述黏著薄片的前述黏著劑層側;及治具用黏著劑層,其積層於前述保護膜形成用薄膜的與前述黏著薄片側相反一側的周緣部,其特徵為:前述黏著薄片的前述黏著劑層的厚度為1~8μm,前述治具用黏著劑層為芯材介於其間之構成,前述芯材為選自包含聚氯乙烯薄膜及氯乙烯共聚物薄膜之群組中的至少一個。
- 一種保護膜形成用複合薄片,包括:黏著薄片,其為在基材的一面側積層黏著劑層而成;保護膜形成用薄膜,其積層於前述黏著薄片的前述黏著劑層側的中央部;及治具用黏著劑層,其積層於前述黏著薄片的前述黏著劑層側的周緣部,其特徵為:前述黏著薄片的前述黏著劑層的厚度為1~8μm,前述治具用黏著劑層為芯材介於其間之構成,前述芯材為選自包含聚氯乙烯薄膜及氯乙烯共聚物薄膜之群組中的至少一個。
- 如申請專利範圍第1或2項所述之保護膜形成用複合薄 片,其中,前述基材係聚丙烯薄膜或將聚丙烯薄膜和其他薄膜組合而成之積層薄膜。
- 如申請專利範圍第1或2項所述之保護膜形成用複合薄片,其中,前述治具用黏著劑層具有環狀的形狀,且形成為當前述保護膜形成用薄膜貼附於工件時,前述工件的主要外周緣與前述治具用黏著劑層的內周緣在平面方向的間隙小於10mm。
- 如申請專利範圍第1或2項所述之保護膜形成用複合薄片,其中,構成前述黏著劑層之黏著劑在130℃下之儲存彈性模量為1.0×105~8.0×106Pa。
- 如申請專利範圍第1或2項所述之保護膜形成用複合薄片,其中,前述工件係半導體晶圓,前述保護膜形成用薄膜係在前述半導體晶圓或將前述半導體晶圓切割而得到之半導體晶片上形成保護膜之層。
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JP2022146907A (ja) * | 2021-03-22 | 2022-10-05 | リンテック株式会社 | 治具固定用粘着シート、保護膜形成用複合シート、及び保護膜付きチップの製造方法 |
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2014
- 2014-12-25 WO PCT/JP2014/084226 patent/WO2015105002A1/ja active Application Filing
- 2014-12-25 JP JP2015556766A patent/JP6600872B2/ja active Active
- 2014-12-25 KR KR1020167017970A patent/KR102258918B1/ko active IP Right Grant
- 2014-12-25 CN CN201480072301.3A patent/CN105899631A/zh active Pending
- 2014-12-25 SG SG11201605465SA patent/SG11201605465SA/en unknown
- 2014-12-25 US US15/109,803 patent/US20160326403A1/en not_active Abandoned
- 2014-12-29 TW TW103145986A patent/TWI651207B/zh active
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TW200530361A (en) * | 2003-12-15 | 2005-09-16 | Furukawa Electric Co Ltd | Wafer-processing tape and method of producing the same |
JP2011184603A (ja) * | 2010-03-10 | 2011-09-22 | Furukawa Electric Co Ltd:The | 粘着テープおよび半導体加工用テープ |
JP2013120839A (ja) * | 2011-12-07 | 2013-06-17 | Lintec Corp | 保護膜形成層付ダイシングシートおよびチップの製造方法 |
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WO2015105002A1 (ja) | 2015-07-16 |
SG11201605465SA (en) | 2016-08-30 |
CN105899631A (zh) | 2016-08-24 |
TW201532837A (zh) | 2015-09-01 |
JP6600872B2 (ja) | 2019-11-06 |
US20160326403A1 (en) | 2016-11-10 |
KR102258918B1 (ko) | 2021-06-02 |
PH12016501335A1 (en) | 2016-08-15 |
JPWO2015105002A1 (ja) | 2017-03-23 |
KR20160106588A (ko) | 2016-09-12 |
PH12016501335B1 (en) | 2016-08-15 |
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