WO2016169305A1 - 显示基板及其制备方法、显示面板和显示装置 - Google Patents

显示基板及其制备方法、显示面板和显示装置 Download PDF

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Publication number
WO2016169305A1
WO2016169305A1 PCT/CN2016/070223 CN2016070223W WO2016169305A1 WO 2016169305 A1 WO2016169305 A1 WO 2016169305A1 CN 2016070223 W CN2016070223 W CN 2016070223W WO 2016169305 A1 WO2016169305 A1 WO 2016169305A1
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Prior art keywords
display
display substrate
layer
metal layer
protective metal
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PCT/CN2016/070223
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English (en)
French (fr)
Inventor
操彬彬
江鹏
陈鹏
文锺源
黄寅虎
杨成绍
杨海鹏
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US15/108,114 priority Critical patent/US9952479B2/en
Publication of WO2016169305A1 publication Critical patent/WO2016169305A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136295—Materials; Compositions; Manufacture processes
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    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display substrate, a method for fabricating the same, a display panel, and a display device.
  • a Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT LCD) includes a first substrate and a second substrate that are paired together, and a liquid crystal layer between the first substrate and the second substrate.
  • a thin film transistor is prepared on a first substrate, the thin film transistor is used as a driving switch; a color film and a black matrix are prepared on the second substrate, wherein the color film is used for A color display is realized, which is used to shield the thin film transistor and each signal line.
  • the first substrate and the second substrate inevitably have a deviation from the cartridge, and therefore, the black matrix must be set to have a large width so that there is a deviation in the presence of the cartridge. In this case, the thin film transistor and each signal line can be shielded.
  • a black matrix having a large width reduces the aperture ratio of the display panel, thereby affecting the brightness and picture quality of the display panel.
  • TFT LCD In another TFT LCD, a thin film transistor, a color film, and a black matrix are prepared on a single substrate, that is, a COA technology (Color filter On Array), and the TFT LCD is displayed.
  • COA technology Color filter On Array
  • the display panel of the TFT LCD includes a first substrate 1, a second substrate 2, and a liquid crystal layer 3; a spacer 4 is disposed between the first substrate 1 and the second substrate 2 to maintain the first substrate 1 and The distance between the two substrates 2, that is, the thickness of the liquid crystal layer 3;
  • the first substrate 1 is provided with a thin film transistor 10, a first insulating layer 11, a black matrix 12, a color film 13, a planarization layer 14, a pixel electrode 15, and a
  • the thin film transistor 10 includes a gate electrode 100, a gate insulating layer 101, an active layer 102, a source 103, and a drain 104.
  • the first insulating layer 11 and the second insulating layer 16 are generally made of silicon nitride (SiN x ).
  • the thin film transistor 10, the color film 13 and the black matrix 12 are formed on the first substrate 1, so that the deviation of the first substrate 1 and the second substrate 2 against the black matrix 12 can be prevented from shielding the thin film transistor 10 and The effect of each signal line is affected, so that the width of the black matrix 12 does not need to be set to be large, and therefore, compared with the above TFT LCD, the TFT LCD can increase the aperture ratio of the display panel, thereby improving the brightness of the display panel and Picture quality.
  • the pattern of the black matrix 12 formed on the first insulating layer 11 has a large difficulty, and the specific problem is that the material of the existing black matrix 12 is difficult to satisfy the high resolution of the display panel.
  • the requirement of the rate; the adhesion between the material of the black matrix 12 and the material of the first insulating layer 11 (SiN x or the like) is insufficient, thereby causing the structure of the display panel to be unstable; the photolithography process for forming the pattern of the black matrix 12 After the development step, the surface of the first insulating layer 11 tends to remain as a black matrix material, which may cause display defects.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and provides a display substrate and a preparation method thereof, a display panel and a display device, which can avoid the above technical difficulties and black matrix preparation in a black matrix preparation process. Problems in the process to ensure the structural stability of the display panel and to ensure the high resolution of the display panel and its good display effect.
  • a display substrate which includes a plurality of pixels, each pixel has a display area, and a display area of the plurality of pixels is a non-display area, and the display substrate further includes a protective metal layer.
  • the protective metal layer covers the non-display area.
  • the protective metal layer has a reflectance of not more than 20%.
  • the protective metal layer is made of at least one of MoNbO, MoNbON, MoTiO, MoTiON, and MoSi.
  • the display substrate further comprises a common electrode, and the protective metal layer is in electrical contact with the common electrode.
  • the common electrode is made of at least one of ITO, ITZO, IGZO, and IZO.
  • the protective metal layer comprises at least one layer, and a layer of the protective metal layer in electrical contact with the common electrode has a smaller resistivity than the common electrode.
  • the display substrate further includes a base substrate, a thin film transistor, a color film, and a pixel electrode.
  • the display substrate further includes a first insulating layer, a second insulating layer, and a planarization layer, wherein the thin film transistor is disposed on the substrate, and the first insulating layer is disposed on the thin film transistor;
  • the color film is disposed on the first insulating layer, and the planarization layer is disposed on the color film;
  • the pixel electrode is disposed on the planarization layer, and the second insulation layer is disposed on The pixel electrode is disposed on the second insulating layer and under the common electrode.
  • the present invention further provides a method for preparing a display substrate, wherein the method for preparing the display substrate is used to prepare the display substrate provided by the present invention; the method for preparing the display substrate includes: The display area forms a step of forming a protective metal layer.
  • the protective metal layer is prepared by a photolithography process.
  • the method for preparing the display substrate further includes the following steps:
  • a common electrode is formed on the protective metal layer and on the second insulating layer, wherein the protective metal layer is formed on a portion of the second insulating layer.
  • the present invention further provides a display panel comprising the above display substrate provided by the present invention.
  • the present invention also provides a display device including the above display panel provided by the present invention.
  • the protective metal layer will display the non-display of the substrate
  • the display area is covered to shield the thin film transistor and each signal line on the display substrate.
  • the display substrate having the protective metal layer can ensure the structural stability of the display panel, ensure the high resolution of the display panel and its good display effect, and reduce the production process. Improve production efficiency and reduce production costs.
  • a protective metal layer is formed on a non-display area of the display substrate to shield the thin film transistor and each signal line on the display substrate, thereby ensuring a better display effect.
  • the protective metal layer can ensure the structural stability of the display panel, ensure the high resolution of the display panel and its good display effect, and reduce the process flow for preparing the display substrate and improve the process. Production efficiency and lower production costs.
  • the display panel provided by the present invention adopts the above display substrate provided by the present invention without preparing a black matrix in the prior art, thereby ensuring structural stability of the display panel and ensuring high resolution of the display panel and its good Show results, while reducing production processes, increasing production efficiency and reducing production costs.
  • the display device provided by the present invention adopts the above display panel provided by the present invention without preparing a black matrix in the prior art, thereby ensuring structural stability of the display panel and ensuring high resolution of the display panel and its good Show results, while reducing production processes, increasing production efficiency and reducing production costs.
  • FIG. 1 is a schematic view of a conventional display panel using COA technology
  • FIG. 2 is a schematic diagram of a display substrate according to an embodiment of the present invention.
  • Figure 3 is a cross-sectional view taken along line A-A of the display substrate shown in Figure 2;
  • FIG. 4 is a schematic view showing another structure of a protective metal layer according to an embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for preparing a display substrate according to an embodiment of the present invention
  • FIG. 6 is a schematic view of a display substrate after the preparation of the thin film transistor is completed
  • FIG. 7 is a schematic view of a display substrate after completion of gate preparation
  • FIG. 8 is a schematic view of a display substrate after the preparation of the first insulating layer is completed
  • FIG. 9 is a schematic view of a display substrate after the color film is prepared.
  • FIG. 10 is a schematic view of a display substrate after completion of preparation of a planarization layer
  • FIG. 11 is a schematic view of a display substrate after completion of preparation of a pixel electrode
  • FIG. 12 is a schematic view of a display substrate after the second insulating layer is prepared
  • Figure 13 is a schematic view of the display substrate after the preparation of the protective metal layer is completed
  • Figure 14 is a schematic view of the display substrate after the preparation of the common electrode.
  • first substrate / display substrate 1: first substrate / display substrate; 2: second substrate / counter substrate; 3: liquid crystal layer; 4: spacer; 10: thin film transistor; 11: first insulating layer; 12: black matrix; Film; 14: planarization layer; 15: pixel electrode; 16: second insulating layer; 17: common electrode; 18: protective metal layer; 100: gate; 101: gate insulating layer; 102: active layer; Source; 104: drain; 180: first layer structure of the protective metal layer; 181: second layer structure of the protective metal layer.
  • FIG. 2 is a schematic diagram of a display substrate according to an embodiment of the present invention.
  • the display substrate 1 includes a plurality of pixels, each pixel has a display area a, and a display area a of the plurality of pixels is a non-display area.
  • the display substrate 1 A protective metal layer 18 is also included, the protective metal layer 18 covering the non-display area.
  • the display area a of each pixel is generally the area where the pixel electrode in the pixel is located;
  • the non-display area is generally an area in which a thin film transistor and various signal lines are disposed, but in some cases, the non-display area is also An edge region of the pixel electrode may be included.
  • the thin film transistor and each signal line are generally shielded by providing a black matrix in the non-display area.
  • the protective metal layer 18 can be made of metal, which itself has the property of being opaque.
  • the protective metal layer 18 is disposed in the non-display area, and the protective metal layer 18 covers the non-display area, so that the protective metal layer 18 can shield the thin film transistor and each signal line, etc., that is, the protective metal layer.
  • the black matrix material characteristics are difficult to meet the high resolution of the display panel Requirements; insufficient adhesion between the black matrix material and the material of the first insulating layer; and problems such as the black matrix material tend to remain on the surface of the first insulating layer after the developing step, thereby reducing the display substrate preparation process The difficulty of the process.
  • the protective metal layer 18 is made of a metal having a low reflectance, which can reduce the reflection of ambient light on the protective metal layer 18 and reduce the influence of the reflection on the protective metal layer 18 on the display effect.
  • the reflectance of the protective metal layer is preferably not more than 20%.
  • the protective metal layer 18 may be made of at least one of a metal or a metal alloy having a lower reflectance: MoNbO, MoNbON, MoTiO, MoTiON, MoSi, so that the protective metal layer 18 has a lower Reflectivity, to ensure the display effect.
  • the display substrate 1 includes a thin film transistor 10, a color film 13, a pixel electrode 15, and a common electrode 17; wherein the thin film transistor 10 is formed on the base substrate S, and the thin film transistor 10 is provided with a first An insulating layer 11; the color film 13 is disposed on the first insulating layer 11, and the color film 13 is provided with a planarization layer 14; the pixel electrode 15 is disposed on the planarization layer 14, and A second insulating layer 16 is disposed on the pixel electrode 15; the protective metal layer 18 is disposed on the second insulating layer 16, and the common electrode 17 is disposed on the protective metal layer 18.
  • the thin film transistor 10 includes a gate 100, a gate insulating layer 101, an active layer 102, a source 103, and a drain 104.
  • the gate electrode 100 is directly prepared on a base substrate S
  • the gate insulating layer 101 is disposed on the gate electrode 100
  • the active layer 102 is disposed on the gate insulating layer.
  • the source 103 and the drain 104 are formed on the active layer 102 at 101.
  • the gate 100 of the thin film transistor 10 The positions of the respective layers of the gate insulating layer 101, the active layer 102, the source 103, and the drain 104 are not limited to those shown in FIG. 3, and may be any other structure that can realize the function of the thin film transistor, such as a top gate structure. That is, the case where the gate 100 is located above the active layer 102.
  • the structures of the respective layers of the thin film transistor 10, the color film 13, the pixel electrode 15, the common electrode 17, and the protective metal layer 18 are not limited to those shown in FIG. 3, and may be any other achievable. The structure is displayed and the protective metal layer 18 is covered to cover the structure of the non-display area.
  • the protective metal layer 18 is in electrical contact with the common electrode 17, and the resistivity of the protective metal layer 18 is smaller than the resistivity of the common electrode 17.
  • the protective metal layer 18 and the common electrode 17 which are in electrical contact with each other jointly transmit the signal transmitted by the common electrode No. 17, thereby reducing the resistance of the signal transmission of the common electrode, thereby contributing to ensuring the uniformity of the signal on the common electrode line. Sex, improve the display.
  • the common electrode 17 may be made of at least one of ITO, ITZO, IGZO, and IZO.
  • the protective metal layer 18 may be made of a metal such as copper, iron, silver, gold, or the like, and the resistivity of these metals is smaller than that of the above-mentioned ITO, ITZO, IGZO, IZO.
  • the protective metal layer 18 is made of a metal alloy material of low reflectivity such as MoNbO, MoNbON, MoTiO, MoTiON, MoSi, etc., when the content of O, N, etc. doped by these metal alloy materials is small, The resistivity is also smaller than the resistivity of the above-mentioned ITO, ITZO, IGZO, and IZO. Therefore, when the protective metal layer 18 is made of a low reflectance material having a small content of O and N as described above, the signal transmission of the common electrode can be reduced by a structure in which the protective metal layer 18 is electrically contacted with the common electrode 17 as shown in FIG. Resistor, which helps to ensure the consistency of the signal on the common electrode line and improve the display effect.
  • a metal alloy material of low reflectivity such as MoNbO, MoNbON, MoTiO, MoTiON, MoSi, etc.
  • the protective metal layer 18 When the content of O, N, or the like doped in the low-reflectivity metal alloy material such as MoNbO, MoNbON, MoTiO, MoTiON, or MoSi is high, the electrical resistivity is high. It can be understood that if the protective metal layer 18 is prepared only by using the above low reflectivity material, when the protective metal layer 18 is in electrical contact with the common electrode 17, the resistance of the signal transmission of the common electrode cannot be effectively reduced. In this case, the protective metal layer 18 and the common electrode 17 can also be prepared using the structure shown in FIG. As shown in FIG. 4, the protective metal layer 18 may include a multilayer structure, that is, may include a first layer structure 180 at a lower portion, and a first layer structure 180.
  • the upper second layer structure 181, and the first layer structure 180 has a lower resistivity.
  • the first layer structure 180 may include a MoNb layer, an A1Nd layer, and a MoNb layer disposed in sequence, as shown in FIG. 4; the second layer structure 181 has a higher content of the above doped O, N, and the like.
  • Made of low-reflectivity metal alloy materials such as MoNbO, MoNbON, MoTiO, MoTiON, and MoSi.
  • Such a protective metal layer 18 is located above the common electrode 17, so that in the protective metal layer 18 shown in FIG. 4, the portion of the protective metal layer 18 that is in electrical contact with the common electrode 17 has a low resistivity, which can lower the common electrode.
  • the resistance of the signal transmission helps to ensure the consistency of the signal on the common electrode line and improve the display effect; and the second layer structure 181 located above has a low reflectivity, so that the light is not irradiated on the protective metal layer 18 Will cause strong reflections, so as to avoid affecting the display.
  • the first layer structure 180 is not limited to the multilayer structure shown in FIG. 4, and may also be a single layer structure formed of a low-resistivity metal such as Cu, Al, Mo, Ag, etc., which can be reduced.
  • the thickness of the protective metal layer 18 contributes to the thinness of the display substrate.
  • the protective metal layer 18 covers the non-display area of the display substrate to shield the thin film transistor and the signal lines on the display substrate, thereby ensuring structural stability of the display panel and ensuring The high resolution of the display panel and its good display effect, while reducing the production process, increasing production efficiency and reducing production costs.
  • the present invention also provides an embodiment of a method of preparing a display substrate.
  • the method for preparing the display substrate is used in the display substrate provided by the above embodiment of the present invention.
  • the method for preparing the display substrate includes the step of forming a protective metal layer in a non-display area of the display substrate.
  • the protective metal layer shields the thin film transistor and each signal line on the display substrate to prevent the structure from adversely affecting the display, thereby ensuring a better display effect.
  • the protective metal layer shields the structure of the thin film transistor and each signal line, it is not necessary to prepare a black matrix when preparing the display substrate, thereby ensuring structural stability of the display panel and ensuring high resolution of the display panel. The display effect is good, and the process flow for preparing the display substrate is reduced, the production efficiency is improved, and the production cost is reduced.
  • FIG. 5 is a flowchart of a method of preparing a display substrate according to an embodiment of the present invention. As shown in FIG. 5, the method for preparing the display substrate may include the following steps S1 to S8:
  • the thin film transistor 10 is formed on the base substrate; the structure of the display substrate after the preparation of the thin film transistor 10 can be as shown in FIG. 6.
  • step S1 the gate electrode 100, the gate insulating layer 101, the active layer 102, the source electrode 103, and the drain electrode 104 are prepared by a plurality of photolithography processes to obtain a thin film transistor structure.
  • the prepared gate 100 can be as shown in FIG. 7 .
  • a first insulating layer 11 is formed on the thin film transistor 10; the display substrate after the preparation of the first insulating layer 11 is as shown in FIG.
  • the material for preparing the first insulating layer 11 in the step S2 may be silicon nitride (SiN x ) and/or silicon oxide (SiO x ).
  • a color film 13 is formed on the first insulating layer 11; the structure of the display substrate after the color film 13 is completed is as shown in FIG.
  • a red color filter, a green color filter, and a blue color filter may be sequentially formed by three photolithography processes; it is noted that, due to the red color filter, the green color filter, and the blue color filter, The structure of the light sheet is known, so in Fig. 9, the red color filter, the green color filter, and the blue color filter are not distinguished. Meanwhile, it should be understood that since the red color filter, the green color filter, and the blue color filter are not distinguished in FIG. 9, the flat surface after the color film 13 shown in FIG. 9 is prepared does not reflect the color film 13 The actual situation of the surface after the preparation is completed; in practice, the surface after the preparation of the color film 13 is an uneven surface.
  • a planarization layer 14 is formed on the color film 13.
  • the structure of the display substrate after the preparation of the planarization layer 14 is as shown in FIG.
  • the preparation of the planarization layer 14 in step S4 can cause the display substrate to have a flat surface in order to prepare subsequent structures.
  • the pixel electrode 15 is formed on the planarization layer 14; the structure of the display substrate after the pixel electrode 15 is completed is as shown in FIG.
  • a second insulating layer 16 is formed on the pixel electrode 15.
  • the structure of the display substrate after the second insulating layer 16 is completed is as shown in FIG.
  • the material of the second insulating layer 16 prepared in step S6 may be silicon. Nitride (SiNx) and/or silicon oxide (SiOx).
  • step S7 is performed; in step S7, a protective metal layer 18 is formed on the second insulating layer 16; the structure of the display substrate after the protective metal layer 18 is completed is as shown in FIG.
  • the protective metal layer 18 is prepared using a low reflectivity metal or metal alloy, which can reduce the reflection of ambient light on the protective metal layer 18, and reduce the influence of the reflection on the protective metal layer 18 on the display effect.
  • the protective metal layer 18 is made of at least one of the following metals or metal alloys: MoNbO, MoNbON, MoTiO, MoTiON, MoSi.
  • the protective metal layer can be prepared by a photolithography process.
  • the photolithography process includes the following steps: deposition ⁇ coating photoresist ⁇ exposure ⁇ development ⁇ etching ⁇ deguming.
  • a common electrode 17 is formed on the protective metal layer 18 and the second insulating layer 16; the structure of the display substrate after the common electrode 17 is formed is as shown in FIG.
  • the common electrode 17 is prepared using materials such as ITO, ITZO, IGZO, IZO, and the like.
  • the thin film transistor 10 and the color film 13 and the pixel electrode 15 and the common electrode 17 are prepared on a display substrate, and the display substrate is a display substrate using COA technology, and the display substrate can improve the aperture ratio. , thereby improving the brightness and display of the display.
  • the above method since the formed protective metal layer 18 covers the non-display area of the display substrate to effect the black matrix, the above method includes the step of forming the protective metal layer 18, and does not include the step of forming the black matrix.
  • the problems encountered in implementing the black matrix in the prior art can be overcome to ensure the structural stability of the display panel, and the high resolution of the display panel and the good display effect thereof can be ensured, and the process flow for preparing the display substrate can be reduced. Improve production efficiency and reduce production costs.
  • the protective metal layer 18 is in electrical contact with the common electrode 17, and the resistivity of the portion of the protective metal layer 18 in electrical contact with the common electrode 17 is lower than that of the common electrode 17, and thus it is understood that the above The arrangement of electrically contacting the protective metal layer 18 with the common electrode 17 can reduce the resistance of the signal transmission of the common electrode, thereby helping to ensure the consistency of the signal on the common electrode line and improving the display effect.
  • the present invention also provides an embodiment of a display panel.
  • the The display panel includes the display substrate provided by the above embodiment of the present invention.
  • the display panel provided by the embodiment of the present invention adopts the display substrate provided by the above embodiments of the present invention without preparing a black matrix in the prior art, thereby ensuring structural stability of the display panel and ensuring high resolution of the display panel. And its good display effect, while reducing the production process, improving production efficiency and reducing production costs.
  • the present invention also provides an embodiment of a display device.
  • the display device includes the display panel provided by the above embodiment of the present invention.
  • the display device provided by the embodiment of the present invention adopts the display panel provided by the above embodiments of the present invention without preparing a black matrix in the prior art, thereby ensuring structural stability of the display panel and ensuring high resolution of the display panel. And its good display effect, while reducing the production process, improving production efficiency and reducing production costs.

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Abstract

一种显示基板（1）及其制备方法、显示面板和显示装置。显示基板（1）包括多个像素，每个像素具有一个显示区（a），多个像素的显示区（a）之间为非显示区，显示基板（1）还包括保护金属层（18），保护金属层（18）覆盖非显示区。在该显示基板（1）中，保护金属层（18）将显示基板（1）的非显示区覆盖以遮蔽显示基板（1）上的薄膜晶体管（10）和各信号线等结构，从而确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。

Description

显示基板及其制备方法、显示面板和显示装置 技术领域
本发明涉及显示技术领域，具体地，涉及一种显示基板及其制备方法、显示面板和显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，以下简称为TFT LCD)包括对盒在一起的第一基板和第二基板，以及位于第一基板和第二基板之间的液晶层。
在已有的一种TFT LCD中，在第一基板上制备有薄膜晶体管，所述薄膜晶体管用作驱动开关；在第二基板上制备有彩膜和黑矩阵，其中，所述彩膜用于实现彩色显示，所述黑矩阵用于遮蔽薄膜晶体管和各信号线。在该种TFT LCD中，第一基板和第二基板对盒时不可避免地会存在对盒偏差，因此，所述黑矩阵必须设置为具有较大的宽度，以使其在存在对盒偏差的情况下能够将薄膜晶体管和各信号线遮蔽。然而，宽度较大的黑矩阵会降低显示面板的开口率，进而影响显示面板的亮度和画面品质。
在已有的另一种TFT LCD中，将薄膜晶体管、彩膜和黑矩阵制备在一张基板上，即COA技术(Color filter On Array，彩膜制备在阵列基板上)，该TFT LCD的显示面板的结构如图1所示。具体地，该TFT LCD的显示面板包括第一基板1、第二基板2、液晶层3；第一基板1和第二基板2之间设有隔垫物4，以维持第一基板1和第二基板2之间的距离，即液晶层3的厚度；第一基板1上设置有薄膜晶体管10、第一绝缘层11、黑矩阵12、彩膜13、平坦化层14、像素电极15、第二绝缘层16和公共电极17；薄膜晶体管10包括栅极100、栅极绝缘层101、有源层102、源极103和漏极104。其中，第一绝缘层11和第二绝缘层16一般由硅的氮化物(SiNx)制成。
在该TFT LCD中，薄膜晶体管10、彩膜13和黑矩阵12制备在第一基板1上，这样可以避免第一基板1和第二基板2的对盒偏差对黑矩阵12遮蔽薄膜晶体管10和各信号线的效果造成影响，从而无需将黑矩阵12的宽度设置为较大，因此，与上一种TFT LCD相比，该TFT LCD可以提高显示面板的开口率，进而提升显示面板的亮度和画面品质。
但在上述采用COA技术的TFT LCD中，在第一绝缘层11上形成黑矩阵12的图形具有较大的难度，其具体问题表现为：现有的黑矩阵12的材料难以满足显示面板高分辨率的要求；黑矩阵12的材料与第一绝缘层11的材料(SiNx等)之间的粘附力不足，从而会导致显示面板的结构不稳定；在形成黑矩阵12图形的光刻工艺的显影步骤后，第一绝缘层11的表面容易残留黑矩阵材料，从而会导致显示不良。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种显示基板及其制备方法、显示面板和显示装置，其可以避免黑矩阵制备过程中的上述技术难点和黑矩阵制备过程中存在的问题，从而确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果。
为实现本发明的目的而提供一种显示基板，其包括多个像素，每个像素具有一个显示区，多个像素的显示区之间为非显示区，所述显示基板还包括保护金属层，所述保护金属层覆盖所述非显示区。
其中，所述保护金属层的反射率不大于20％。
其中，所述保护金属层由MoNbO、MoNbON、MoTiO、MoTiON、MoSi中的至少一种制成。
其中，所述显示基板还包括公共电极，所述保护金属层与所述公共电极电接触。
其中，所述公共电极由ITO、ITZO、IGZO、IZO中的至少一种制成。
其中，所述保护金属层包括至少一层，并且所述保护金属层中的与所述公共电极电接触的一层具有比所述公共电极更小的电阻率。
其中，所述显示基板还包括衬底基板、薄膜晶体管、彩膜和像素电极。
其中，所述显示基板还包括第一绝缘层、第二绝缘层和平坦化层，其中，所述薄膜晶体管设置在衬底基板上，且所述第一绝缘层设置在所述薄膜晶体管上；所述彩膜设置在所述第一绝缘层上，且所述平坦化层设置在所述彩膜上；所述像素电极设置在所述平坦化层上，且所述第二绝缘层设置在所述像素电极上；所述保护金属层设置在所述第二绝缘层上以及所述公共电极下。
作为另一个技术方案，本发明还提供一种显示基板的制备方法，所述显示基板的制备方法用于制备本发明提供的上述显示基板；所述显示基板的制备方法包括：在显示基板的非显示区形成保护金属层的步骤。
其中，通过光刻工艺制备所述保护金属层。
其中，所述显示基板的制备方法还包括以下步骤：
在衬底基板上形成薄膜晶体管；
在薄膜晶体管上形成第一绝缘层；
在第一绝缘层上形成彩膜；
在所述彩膜上形成平坦化层；
在所述平坦化层上形成像素电极；
在所述像素电极上形成第二绝缘层；以及
在所述保护金属层上和第二绝缘层上形成公共电极，其中，所述保护金属层形成在所述第二绝缘层的一部分上。
作为另一个技术方案，本发明还提供一种显示面板，所述显示面板包括本发明提供的上述显示基板。
作为另一个技术方案，本发明还提供一种显示装置，所述显示装置包括本发明提供的上述显示面板。
本发明具有以下有益效果：
根据本发明提供的显示基板，其保护金属层将显示基板的非显 示区覆盖以遮蔽显示基板上的薄膜晶体管和各信号线等结构。与具有黑矩阵的现有技术相比，具有所述保护金属层的显示基板可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
根据本发明提供的显示基板的制备方法，其在显示基板的非显示区形成保护金属层以遮蔽显示基板上的薄膜晶体管和各信号线等结构，从而保证较好的显示效果。作为对现有技术中的黑矩阵的替代，采用保护金属层可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少制备显示基板的工艺流程，提高生产效率，以及降低生产成本。
根据本发明提供的显示面板，其采用本发明提供的上述显示基板而无需制备现有技术中的黑矩阵，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
根据本发明提供的显示装置，其采用本发明提供的上述显示面板而无需制备现有技术中的黑矩阵，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为现有采用COA技术的显示面板的示意图；
图2为本发明实施方式提供的显示基板的示意图；
图3为图2所示显示基板的A-A剖视图；
图4为根据本发明实施方式的保护金属层的另一种结构的示意图；
图5为本发明实施方式提供的显示基板的制备方法的流程图；
图6为薄膜晶体管制备完成后的显示基板的示意图；
图7为栅极制备完成后的显示基板的示意图；
图8为第一绝缘层制备完成后的显示基板的示意图；
图9为彩膜制备完成后的显示基板的示意图；
图10为平坦化层制备完成后的显示基板的示意图；
图11为像素电极制备完成后的显示基板的示意图；
图12为第二绝缘层制备完成后的显示基板的示意图；
图13为保护金属层制备完成后的显示基板的示意图；
图14为公共电极制备完成后的显示基板的示意图。
其中，附图标记为：
1：第一基板/显示基板；2：第二基板/对盒基板；3：液晶层；4：隔垫物；10：薄膜晶体管；11：第一绝缘层；12：黑矩阵；13：彩膜；14：平坦化层；15：像素电极；16：第二绝缘层；17：公共电极；18：保护金属层；100：栅极；101：栅绝缘层；102：有源层；103：源极；104：漏极；180：保护金属层的第一层结构；181：保护金属层的第二层结构。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
本发明提供一种显示基板的实施方式，图2为本发明实施方式提供的显示基板的示意图。如图2所示，在本实施方式中，所述显示基板1包括多个像素，每个像素具有一个显示区a，多个像素的显示区a之间为非显示区，所述显示基板1还包括保护金属层18，所述保护金属层18覆盖所述非显示区。
具体地，每个像素的所述显示区a一般为该像素内的像素电极所在的区域；非显示区一般为设置薄膜晶体管和各种信号线的区域，但在部分情况下，非显示区也可包括像素电极的边缘区域。如上所述，在现有技术中，一般通过在非显示区设置黑矩阵来遮蔽薄膜晶体管和各信号线。
可以理解，保护金属层18可由金属制成，其本身具有不透光的特性。本实施方式中，在非显示区设置保护金属层18，且所述保护金属层18覆盖所述非显示区，以使得保护金属层18可以遮蔽薄膜晶体管和各信号线等，即：保护金属层18可以替代现有技术中的黑矩阵，从而可以减少生产工艺的流程，提高生产效率，以及降低生产成本；同时可以避免现有技术中的以下问题：黑矩阵材料特性难以满足显示面板高分辨率的要求；黑矩阵材料与第一绝缘层的材料之间的粘附力不足；以及在在显影步骤后，第一绝缘层的表面容易残留黑矩阵材料等问题，从而可以降低显示基板制备过程中的工艺难度。
优选的是，所述保护金属层18采用低反射率的金属制成，这样可以减少环境光照射至保护金属层18上产生的反射，降低保护金属层18上的反射对显示效果造成的影响。具体地，所述保护金属层的反射率优选为不大于20％。
进一步地，所述保护金属层18可以由以下具有较低反射率的金属或金属合金中的至少一种制成：MoNbO、MoNbON、MoTiO、MoTiON、MoSi，以使保护金属层18具有较低的反射率，保证显示效果。
如图3所示，显示基板1包括薄膜晶体管10、彩膜13、像素电极15和公共电极17；其中，薄膜晶体管10制备在衬底基板S上，且所述薄膜晶体管10上设有第一绝缘层11；所述彩膜13设置在所述第一绝缘层11上，且所述彩膜13上设有平坦化层14；所述像素电极15设置在所述平坦化层14上，且所述像素电极15上设有第二绝缘层16；所述保护金属层18设置在所述第二绝缘层16上，且所述保护金属层18上设有所述公共电极17。
其中，薄膜晶体管10包括栅极100、栅极绝缘层101、有源层102、源极103和漏极104。如图3所示，所述栅极100直接制备在衬底基板S上，所述栅极绝缘层101设置在所述栅极100上，所述有源层102设置在所述栅极绝缘层101上，所述源极103和漏极104制备在所述有源层102上。
需要说明的是，在本实施方式中，薄膜晶体管10的栅极100、 栅极绝缘层101、有源层102、源极103和漏极104等各层的位置并不限于图3所示，其还可以为其他任何可以实现薄膜晶体管功能的结构，如顶栅型结构，即栅极100位于有源层102上方的情形。同样地，在本实施方式中，薄膜晶体管10、彩膜13、像素电极15、公共电极17和保护金属层18等各层的结构也不限于图3所示，其还可以为其他任何可实现显示功能且使得保护金属层18覆盖非显示区的结构。
优选的是，如图3所示，所述保护金属层18与所述公共电极17电接触，并且所述保护金属层18的电阻率小于所述公共电极17的电阻率。通过这种方式，相互电接触的保护金属层18和公共电极17共同传输公共电极17号传输的信号，从而可以降低公共电极的信号传输的电阻，从而有助于保证公共电极线上信号的一致性，提高显示效果。
在本实施方式中，所述公共电极17可以由ITO、ITZO、IGZO、IZO中的至少一种制成。在此情况下，保护金属层18可由诸如铜、铁、银、金等金属制成，这些金属的电阻率小于上述ITO、ITZO、IGZO、IZO的电阻率。
此外，在保护金属层18由诸如MoNbO、MoNbON、MoTiO、MoTiON、MoSi等低反射率的金属合金材料制成的情况下，当这些金属合金材料掺杂的O、N等的含量较小时，其电阻率也小于上述ITO、ITZO、IGZO、IZO的电阻率。因此，当保护金属层18采用上述O、N含量较小的低反射率材料时，通过如图3所示的保护金属层18与公共电极17电接触的结构，可以降低公共电极的信号传输的电阻，从而有助于保证公共电极线上信号的一致性，提高显示效果。
在上述MoNbO、MoNbON、MoTiO、MoTiON、MoSi等低反射率的金属合金材料中掺杂的O、N等的含量较高时，其电阻率较高。可以理解，若仅采用上述低反射率材料制备保护金属层18，在保护金属层18与公共电极17电接触时，无法有效降低公共电极的信号传输的电阻。在此情况下，还可以采用图4所示的结构来制备保护金属层18和公共电极17。如图4所示，保护金属层18可以包括多层结构，即可以包括位于下部的第一层结构180，以及位于第一层结构180 上方的第二层结构181，并且所述第一层结构180的电阻率较低。具体地，所述第一层结构180可以包括依次设置的MoNb层、A1Nd层和MoNb层，如图4所示；所述第二层结构181由上述掺杂的O、N等的含量较高的MoNbO、MoNbON、MoTiO、MoTiON、MoSi等低反射率的金属合金材料制成。这样的保护金属层18位于公共电极17的上方，因此在图4所示的保护金属层18中，保护金属层18的与公共电极17电接触的部分具有低电阻率，这样可以降低公共电极的信号传输的电阻，从而有助于保证公共电极线上信号的一致性，提高显示效果；而位于上方的第二层结构181具有低反射率，这样可以使得光线照射在保护金属层18上时不会引起较强的反光，从而避免影响显示效果。当然，需要指出的是，第一层结构180并不限于图4所示的多层结构，其也可以为由Cu、Al、Mo、Ag等低电阻率金属形成的单层结构，这样可以减少保护金属层18的厚度，有助于显示基板的轻薄化。
根据本发明实施方式提供的显示基板，其保护金属层18将显示基板的非显示区覆盖以遮蔽显示基板上的薄膜晶体管和各信号线等结构，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
本发明还提供一种显示基板的制备方法的实施方式，在本实施方式中，所述显示基板的制备方法用于本发明上述实施方式提供的显示基板。具体地，所述显示基板的制备方法包括：在显示基板的非显示区形成保护金属层的步骤。
在显示基板的非显示区形成保护金属层后，该保护金属层会将显示基板上的薄膜晶体管和各信号线等结构遮蔽，避免这些结构对显示造成不良影响，从而可以保证较好的显示效果。同时，由于保护金属层会将薄膜晶体管和各信号线等结构遮蔽，因此在制备显示基板时就无需再制备黑矩阵，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少制备显示基板的工艺流程，提高生产效率，以及降低生产成本。
图5为本实施方式提供的显示基板的制备方法的流程图。如图5所示，所述显示基板的制备方法可以包括以下步骤S1～S8：
S1，在衬底基板上形成薄膜晶体管10；薄膜晶体管10制备完成后的显示基板的结构可以如图6所示。
具体地，在步骤S1中，通过多次光刻工艺制备栅极100、栅极绝缘层101，有源层102，源极103和漏极104，获得薄膜晶体管结构。其中，制备完成的栅极100可以如图7所示。
S2，在薄膜晶体管10上形成第一绝缘层11；第一绝缘层11制备完成后的显示基板如图8所示。
具体地，步骤S2中制备所述第一绝缘层11的材料可以为硅的氮化物(SiNx)和/或硅的氧化物(SiOx)。
S3，在第一绝缘层11上形成彩膜13；彩膜13制备完成后的显示基板的结构如图9所示。
具体地，步骤S3中，可以通过三次光刻工艺依次形成红色滤光片、绿色滤光片和蓝色滤光片；需要说明的是，由于红色滤光片、绿色滤光片和蓝色滤光片的结构是已知的，因此在图9中，未将红色滤光片、绿色滤光片和蓝色滤光片区分。同时，应当理解，由于在图9中未将红色滤光片、绿色滤光片和蓝色滤光片区分，图9中所示的彩膜13制备完成后的平坦表面并不反映彩膜13制备完成后的表面的真实情形；实际中，彩膜13制备完成后的表面是不平坦的表面。
S4，在所述彩膜13上形成平坦化层14；平坦化层14制备完成后的显示基板的结构如图10所示。
由于彩膜13制备完成后形成的是不平坦的表面，因此在步骤S4中制备平坦化层14可以使得显示基板具有平坦的表面，以便于制备后续的其他结构。
S5，在所述平坦化层14上形成像素电极15；像素电极15制备完成后的显示基板的结构如图11所示。
S6，在所述像素电极15上形成第二绝缘层16；第二绝缘层16制备完成后的显示基板的结构如图12所示。
具体地，步骤S6中制备所述第二绝缘层16的材料可以为硅的 氮化物(SiNx)和/或硅的氧化物(SiOx)。
在步骤S6之后，进行步骤S7；在步骤S7中，在第二绝缘层16上制备保护金属层18；保护金属层18制备完成后的显示基板的结构如图13所示。优选地，所述保护金属层18采用低反射率的金属或金属合金制备，这样可以减少环境光照射至保护金属层18上产生的反射，降低保护金属层18上的反射对显示效果造成的影响。具体地，所述保护金属层18采用以下金属或金属合金中的至少一种制成：MoNbO、MoNbON、MoTiO、MoTiON、MoSi。其中，可以通过光刻工艺制备所述保护金属层。所述光刻工艺包括以下步骤：沉积→涂覆光刻胶→曝光→显影→刻蚀→除胶。
S8，在所述保护金属层18上和第二绝缘层16上形成公共电极17；公共电极17形成后的显示基板的结构如图14所示。
具体地，步骤S8中，采用ITO、ITZO、IGZO、IZO等材料制备公共电极17。
根据上述步骤S1～S8，在一个显示基板上制备了薄膜晶体管10和彩膜13，以及像素电极15和公共电极17，所述显示基板为采用COA技术的显示基板，该显示基板可以提高开口率，进而提高显示的亮度和显示效果。
在上述实施例中，由于所形成的保护金属层18覆盖显示基板的非显示区以实现黑矩阵的作用，因此上述方法中包括形成保护金属层18的步骤，而不包括形成黑矩阵的步骤。这样，可以克服现有技术中实现黑矩阵时遇到的问题，来确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时可以减少制备显示基板的工艺流程，提高生产效率，以及降低生产成本。
此外，在上述实施例中，保护金属层18与公共电极17电接触，并且保护金属层18的与公共电极17电接触的部分的电阻率低于公共电极17的电阻率，因此可以理解，上述将保护金属层18与公共电极17电接触的设置可以降低公共电极的信号传输的电阻，从而有助于保证公共电极线上信号的一致性，提高显示效果。
本发明还提供一种显示面板的实施方式，在本实施方式中，所 述显示面板包括本发明上述实施方式提供的显示基板。
根据本发明实施方式提供的显示面板，其采用本发明上述实施方式提供的显示基板而无需制备现有技术中的黑矩阵，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
本发明还提供一种显示装置的实施方式，在本实施方式中，所述显示装置包括本发明上述实施方式提供的显示面板。
根据本发明实施方式提供的显示装置，其采用本发明上述实施方式提供的显示面板而无需制备现有技术中的黑矩阵，从而可以确保显示面板的结构稳定性，并保证显示面板的高分辨率及其良好的显示效果，同时减少生产工艺流程，提高生产效率，降低生产成本。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

  1. 一种显示基板，包括多个像素，每个像素具有一个显示区，所述多个像素的显示区之间为非显示区，其特征在于，所述显示基板还包括保护金属层，所述保护金属层覆盖所述非显示区。
  2. 根据权利要求1所述的显示基板，其中，所述保护金属层的反射率不大于20％。
  3. 根据权利要求2所述的显示基板，其中，所述保护金属层由MoNbO、MoNbON、MoTiO、MoTiON、MoSi中的至少一种制成。
  4. 根据权利要求1所述的显示基板，还包括公共电极，其中，所述保护金属层与所述公共电极电接触。
  5. 根据权利要求4所述的显示基板，其中，所述公共电极由ITO、ITZO、IGZO、IZO中的至少一种制成。
  6. 根据权利要求4所述的显示基板，其中，所述保护金属层包括至少一层，并且所述保护金属层中的与所述公共电极电接触的一层具有比所述公共电极更小的电阻率。
  7. 根据权利要求4所述的显示基板，其中，所述显示基板还包括衬底基板、薄膜晶体管、彩膜和像素电极。
  8. 根据权利要求7所述的显示基板，还包括第一绝缘层、第二绝缘层和平坦化层，其中，
    所述薄膜晶体管设置在所述衬底基板上，且所述第一绝缘层设置在所述薄膜晶体管上；
    所述彩膜设置在所述第一绝缘层上，且所述平坦化层设置在所 述彩膜上；
    所述像素电极设置在所述平坦化层上，且所述第二绝缘层设置在所述像素电极上；以及
    所述保护金属层设置在所述第二绝缘层上以及所述公共电极下。
  9. 一种显示基板的制备方法，所述显示基板的制备方法用于制备权利要求1～8任意一项所述的显示基板，其中，所述显示基板的制备方法包括：
    在显示基板的非显示区形成保护金属层的步骤。
  10. 根据权利要求9所述的显示基板的制备方法，其中，通过光刻工艺形成所述保护金属层。
  11. 根据权利要求10所述的显示基板的制备方法，还包括步骤：
    在衬底基板上形成薄膜晶体管；
    在薄膜晶体管上形成第一绝缘层；
    在第一绝缘层上形成彩膜；
    在所述彩膜上形成平坦化层；
    在所述平坦化层上形成像素电极；
    在所述像素电极上形成第二绝缘层；以及
    在所述保护金属层上和第二绝缘层上形成公共电极，
    其中，所述保护金属层设置在所述第二绝缘层的一部分上。
  12. 一种显示面板，其中，所述显示面板包括权利要求1～8任意一项所述的显示基板。
  13. 一种显示装置，其中，所述显示装置包括权利要求12所述的显示面板。
PCT/CN2016/070223 2015-04-24 2016-01-06 显示基板及其制备方法、显示面板和显示装置 WO2016169305A1 (zh)

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