WO2016161731A1 - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

Info

Publication number
WO2016161731A1
WO2016161731A1 PCT/CN2015/086460 CN2015086460W WO2016161731A1 WO 2016161731 A1 WO2016161731 A1 WO 2016161731A1 CN 2015086460 W CN2015086460 W CN 2015086460W WO 2016161731 A1 WO2016161731 A1 WO 2016161731A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
organic insulating
array substrate
sensitizer
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/086460
Other languages
English (en)
French (fr)
Inventor
张敏
操彬彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/914,076 priority Critical patent/US20170062486A1/en
Publication of WO2016161731A1 publication Critical patent/WO2016161731A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Definitions

  • the present disclosure relates to the field of display device technologies, and in particular, to an array substrate, a method for fabricating the same, and a display device.
  • the array substrate of the display device is provided with a plurality of insulating layers for separating the different structures.
  • the organic insulating layer composed of an organic insulating material (such as polyethylene, polytetrafluoroethylene, etc.) has the advantages of simple process, low cost, and the like, and thus has been obtained more and more applications.
  • the thickness of the organic insulating layer tends to be large, and the slope angle at the opening thereof is also large, whereby the photoresist on the organic insulating layer easily flows and accumulates at the edge of the opening; these accumulated photoresists are difficult to be completely removed. Therefore, photoresist residues are generated, which in turn causes the edge of the opening to fail to form the correct structure and affect the display.
  • the edge portion of the array substrate of the liquid crystal display device is provided with a connection region for connecting leads (gate line leads, data line leads 2, common electrode line leads, etc.) to the driving chip.
  • leads gate line leads, data line leads 2, common electrode line leads, etc.
  • the organic insulating layer 1 is used as the passivation layer between the data line lead 2 and the pixel electrode, the organic insulating layer 1 is provided with an opening 19 in the connection region to expose the tab 21 (PAD) at the end of the data line lead 2.
  • the openings 19 of the organic insulating layer 1 in the connection region must be large, and each opening 19 corresponds to the end of the plurality of data line leads 2.
  • a transparent conductive layer 3 such as an indium tin oxide layer is further deposited to form a pixel electrode or a common electrode, and it is apparent that the transparent conductive layer 3 in the opening 19 should be completely removed.
  • the photoresist 9 remains on the edge of the opening, and the transparent conductive layer 3 under the residual photoresist 9 cannot be removed, thereby turning on the data line leads 2, causing defects such as bright lines ( Bad DDS).
  • the present disclosure is directed to the problem that the organic insulating layer in the conventional array substrate is liable to cause other structural defects, and provides an array substrate capable of avoiding other structural defects, a preparation method thereof, and a display device.
  • an array substrate comprising an insulating layer, an opening is provided in the insulating layer, and the insulating layer comprises:
  • a second insulating layer disposed on the first insulating layer, wherein a slope angle of the second insulating layer at the opening is smaller than a slope angle of the first insulating layer.
  • the insulating layer may be an organic insulating layer; the first insulating layer may be a first organic insulating layer; and the second insulating layer may be a second organic insulating layer.
  • the first organic insulating layer at the opening may have a slope angle of 50 to 60 degrees; the second organic insulating layer at the opening may have a slope angle of 40 to 50 degrees; The difference between the slope angle of the organic insulating layer and the slope angle of the second organic insulating layer may be 5 to 15 degrees.
  • the first organic insulating layer may have a thickness of 1 to 2 micrometers; the second organic insulating layer may have a thickness of 1 to 2 micrometers; and the organic insulating layer may have a thickness of 2 to 3 Micron.
  • the material of the organic insulating layer may include a sensitizer and a film forming material, and the content of the sensitizer in the first organic insulating layer and the second organic insulating layer may be different.
  • the sensitizer in the organic insulating layer may be a negative photosensitive agent; the content of the sensitizer in the first organic insulating layer may be greater than the content of the sensitizer in the second organic insulating layer.
  • the sensitizer in the organic insulating layer may be a positive photosensitive agent; the content of the sensitizer in the first organic insulating layer may be less than the content of the sensitizer in the second organic insulating layer.
  • the sensitizer of the layer having a higher sensitizer content may have a mass percentage of 3 to 5%; and the sensitizer content is low.
  • the mass percentage of the sensitizer of the layer may be from 1 to 3%; the difference in mass percentage of the sensitizer in the two layers may be from 1.5 to 2.5%.
  • the array substrate may include a connection region for connecting the driving chip and a lead in the connection region, at least part of the opening of the organic insulating layer being disposed in the connection region; the organic insulating layer Located above the lead, each of the openings of the organic insulating layer in the connection region is provided with an end of a plurality of leads; and the organic insulating layer is provided with at least one conductive structure.
  • the lead is a data line lead; the organic insulating layer is a passivation layer disposed on the data line lead; and the conductive structure is a pixel electrode or a common electrode.
  • a method of fabricating the above array substrate comprising:
  • the first insulating layer and the second insulating layer are formed, and openings are formed in the first insulating layer and the second insulating layer.
  • the forming the first insulating layer and the second insulating layer and forming the openings in the first insulating layer and the second insulating layer include: forming a first insulating layer; forming a second insulating layer; An opening penetrating the first insulating layer and the second insulating layer is formed.
  • a display device comprising the above array substrate.
  • the insulating layer (especially the organic insulating layer) is divided into at least two layers (may also be more layers), and the upper layer slope angle is smaller, thereby making the slope of the opening edge
  • the overall slowness is stepped, which reduces the accumulation of photoresist at the edge of the opening (ie, reduces photoresist residue), thereby ensuring that other structures on the upper layer of the insulating layer can be formed correctly, reducing the probability of occurrence of defects such as DDS.
  • Improve product quality is improved.
  • 1 is a partial structural view of a conventional array substrate in a connection region
  • FIG. 2 is a partial cross-sectional structural view of a conventional array substrate in a connection region
  • FIG. 3 is a partial schematic structural view of an array substrate in a connection region according to an embodiment of the present disclosure
  • FIG. 4 is a partial cross-sectional structural view of an array substrate in a connection region according to an embodiment of the present disclosure.
  • the reference numerals are: 1, an organic insulating layer; 11, a first organic insulating layer; 12, a second organic insulating layer; 19, an opening; 2, a data line lead; 21, a joint; 3, a conductive layer; Photoresist.
  • the embodiment provides an array substrate including an insulating layer, and an opening 19 is disposed in the insulating layer.
  • the array substrate of the present embodiment may be an array substrate for a liquid crystal display device, an organic light emitting diode display device, or the like.
  • a plurality of insulating layers are included in the array substrate for separating the structures of the different layers, and at least one of the insulating layers is provided with openings 19 (or vias) for electrically connecting the upper and lower structures.
  • the insulating layer includes: a first insulating layer; a second insulating layer disposed on the first insulating layer, and a slope angle of the second insulating layer at the opening 19 is smaller than a slope angle of the first insulating layer.
  • the above insulating layer is the organic insulating layer 1, and correspondingly, the first insulating The layer is the first organic insulating layer 11, and the second insulating layer is the second organic insulating layer 12. Therefore, the second organic insulating layer 12 is provided on the first organic insulating layer 11, and the slope angle of the second organic insulating layer 12 at the opening 19 is smaller than the slope angle of the first organic insulating layer 11.
  • the insulating layer may be an organic insulating layer 1 composed of an organic insulating material, the organic insulating layer 1 being divided into at least two layers, and a layer slope angle on the upper layer Smaller, thereby making the slope of the edge of the opening 19 as a whole smooth, stepped, which can reduce the accumulation of photoresist at the edge of the opening 19 (ie, reduce photoresist residue), thereby ensuring that it is above the organic insulating layer 1.
  • Other structures can be formed correctly, reducing the probability of occurrence of defects such as DDS and improving product quality.
  • the above-described organic insulating layer 1 is not limited to being composed of two layers, and it may be divided into three or more layers.
  • the uppermost layer may have a smaller slope angle.
  • the adjacent two layers may have the same slope angle or the other angles, but at least the first organic insulating layer 11 having the above relationship is ensured.
  • a second organic insulating layer 12 thereon Since the substantial case when the organic insulating layer 1 is divided into more layers is similar to that when the organic insulating layer 1 is divided into two layers, it will not be described in detail herein.
  • the first organic insulating layer 11 at the opening 19 has a slope angle of 50 to 60 degrees; the opening 19 has a second organic insulating layer 12 having a slope angle of 40 to 50 degrees; and the opening 19 is at the first organic insulating layer.
  • the difference between the slope angle of 11 and the slope angle of the second organic insulating layer 12 is 5 to 15 degrees.
  • the slope angle of the first organic insulating layer 11 should be larger than the slope angle of the second organic insulating layer 12, and when the slope angles of the two layers are in the above range, better lithography prevention can be achieved.
  • the first organic insulating layer 11 has a thickness of 1 to 2 ⁇ m; the second organic insulating layer 12 has a thickness of 1 to 2 ⁇ m; and the organic insulating layer 1 has a thickness of 2 to 3 ⁇ m.
  • the total thickness of the organic insulating layer 1 is 2 to 3 ⁇ m; in this case, the thickness of the two layers may be in the above range, and the distribution of the specific thickness of the two layers may be determined by those skilled in the art. Adjust as needed.
  • the material of the organic insulating layer 1 includes a sensitizer and a film forming material, and the content of the sensitizer in the first organic insulating layer 11 and the second organic insulating layer 12 is different.
  • the organic insulating layer 1 may be composed of a photosensitive material similar to "photoresist", the organic insulating layer 1 including a film forming material for forming a film main body, and a photosensitive sensitizer The sensitizer can react to the light and change the solubility of the film-forming material, so that the organic insulating layer 1 can be exposed and developed to form a desired pattern without Etching it.
  • the gradient angle of the organic insulating layer 1 can be changed correspondingly.
  • the content of the photosensitive agent in the first organic insulating layer 11 is greater than the content of the photosensitive agent in the second organic insulating layer 12.
  • the negative photosensitive agent is also a sensitizer used in a negative photoresist, and refers to a sensitizer which can make the organic insulating layer 1 insoluble after being exposed to light.
  • the sensitizer the following table As shown in Fig. 1, the larger the content of the sensitizer, the larger the slope angle obtained, and therefore the content of the sensitizer in the first organic insulating layer 11 is required to be high.
  • the film-forming material used in the organic insulating layer 1 in the above table is mainly acrylic resin
  • the sensitizer material is mainly propylene glycol methyl ether acetate
  • the manufacturers of the three organic insulating layer materials are respectively: A organic insulating layer material: DOW, B organic insulating layer material: Dongjin; C organic insulating layer material: JSR.
  • the organic insulating layer 1 also contains other known components such as pigments, and will not be described in detail herein.
  • the bottom width, the slope angle, and the like of the opening 19 of each of the organic insulating layers 1 are obtained by observing a cross section at the opening 19 of the organic insulating layer 1 by a scanning electron microscope.
  • the sensitizer in the organic insulating layer 1 is a positive photosensitive agent; then the content of the sensitizer in the first organic insulating layer 11 is smaller than the content of the sensitizer in the second organic insulating layer 12.
  • a positive photosensitive agent can also be used, that is, a sensitizing agent which makes the organic insulating layer 1 soluble after being irradiated, and when a positive photosensitive agent is used, the larger the content of the sensitizing agent, the higher the slope angle obtained. It is small, and therefore the content of the sensitizer in the first organic insulating layer 11 is required to be low.
  • the sensitizer and the film forming material in the first organic insulating layer 11 and the second organic insulating layer 12 may be the same or different and the properties of the sensitizer may be different.
  • the sensitizer in the first organic insulating layer 11 is a positive photosensitive agent
  • the sensitizing agent in the second organic insulating layer 12 is a negative photosensitive agent, or vice versa, as long as the second organic insulating layer 12 is at the opening 19.
  • the slope angle may be smaller than the slope angle of the first organic insulating layer 11.
  • the sensitizer of the layer having a higher sensitizer content has a mass percentage of 3 to 5%; the layer having a lower sensitizer content
  • the mass percentage of the sensitizer is from 1 to 3%; the difference in the mass percentage of the sensitizer in the two layers is from 1.5 to 2.5%.
  • the sensitizer when used to adjust the slope angle of the organic insulating layer 1, the sensitizer content in the two layers can be made to meet the above conditions, thereby achieving the above-described slope angle range.
  • the content of the photosensitive agent in the first insulating layer may be 3 to 5%
  • the content of the photosensitive agent in the second insulating layer may be 1 to 3%
  • a positive photosensitive agent when used
  • the content of the sensitizer in the first insulating layer is 1 to 3%
  • the content of the sensitizer in the second insulating layer is 3 to 5%.
  • the array substrate of the present embodiment includes a connection region for connecting the driving chip and a lead in the connection region, at least a portion of the opening 19 of the organic insulating layer 1 is disposed in the connection region; and the organic insulating layer 1 is located at the lead Above, each of the openings 19 of the organic insulating layer 1 in the connection region is provided with an end portion of a plurality of leads; and the organic insulating layer 1 is provided with at least one conductive structure.
  • the edge portion of the array substrate may be provided with a connection region for connecting the lead to the driving chip, and the organic insulating layer 1 is provided with an opening 19 in the connection region so that the end of the lead covered by it (such as " The joint 21") is exposed and connected to the driving chip; moreover, each opening 19 of the organic insulating layer 1 in the connection region should correspond to the end of the plurality of leads; meanwhile, in the array substrate, the organic insulating layer 1 is also included At least one other conductive structure (such as a pixel electrode, a common electrode, etc.).
  • the opening 19 of the organic insulating layer 1 in the above connection region is easy to form a photoresist residue on the edge, and the photoresist residue may cause the subsequently formed conductive structure pattern to be incorrect.
  • the plurality of leads are electrically connected to each other.
  • the overall slope angle at the opening 19 of the organic insulating layer 1 is small, so that the photoresist residue can be avoided, thereby preventing the leads from being electrically connected to each other.
  • the leads are data line leads 2; the organic insulating layer 1 is a passivation layer provided on the data line leads 2; the conductive structure is a pixel electrode or a common electrode.
  • the organic insulating layer 1 may be a passivation layer overlying the data line leads 2, and at this time, the pixel electrode or the common electrode is further formed on the organic insulating layer 1 ( According to the specific form of the array substrate). The reason for this is because the above photoresist residue The problem of leaving the lead wire turned on is actually found at most in the data line lead 2.
  • the organic insulating layer 1 may also be a gate insulating layer covering the gate.
  • the lead is a gate line lead
  • the conductive structure on the organic insulating layer 1 may be a data line lead. 2.
  • the opening 19 of the organic insulating layer 1 may be located not only in the connection region but also in the display region for display (for example, an opening for connecting the source drain and the active region), of course, the display region
  • the openings in the present invention generally do not result in different leads being connected, but they may cause other structural defects, so the technical solutions in the present disclosure are also applicable.
  • the insulating layer in this embodiment may also be an inorganic insulating layer composed of an inorganic material, and in this case, it may also be divided into two layers having different slope angles.
  • the organic insulating layer 1 since the thickness of the organic insulating layer 1 is generally large, the above-mentioned photoresist residue problem is relatively easy to occur. Therefore, in the present embodiment, the organic insulating layer 1 will be described as an example.
  • a further embodiment of the present disclosure provides a method for fabricating the above array substrate, comprising:
  • a first insulating layer and a second insulating layer are formed, and openings are formed in the first insulating layer and the second insulating layer.
  • the step of forming the first insulating layer and the second insulating layer and forming openings in the first insulating layer and the second insulating layer specifically includes:
  • Openings through the first insulating layer and the second insulating layer are simultaneously formed.
  • openings can be simultaneously formed in the two layers uniformly, thereby simplifying the process.
  • first insulating layer is formed first and an opening is formed therein, it is also possible to form the second insulating layer and continue to form an opening therein.
  • the above insulating layer may be an organic insulating layer.
  • the first insulating layer is a first organic insulating layer
  • the second insulating layer is a second organic insulating layer.
  • the manner in which the openings are formed in the first organic insulating layer and the second organic insulating layer is various.
  • the organic insulating layer containing the photosensitive agent can be directly exposed and developed. Since the specific process of forming the opening is known to those skilled in the art, it will not be detailed here. description.
  • the step of forming the opening may further include coating photoresist, etching, photoresist stripping, and the like, which will not be described in detail herein.
  • Embodiments of the present disclosure also provide a display device including the above array substrate.
  • the display device provided in this embodiment may be any product or component having a display function, such as a liquid crystal display panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a liquid crystal display panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板及其制备方法、显示装置，并且涉及显示设备技术领域，其可解决现有的阵列基板中的有机绝缘层（1）容易引起其他结构不良的问题。阵列基板包括绝缘层，所述绝缘层中设有开口（19），且所述绝缘层包括：第一绝缘层（11）；设于第一绝缘层（11）上的第二绝缘层（12），在开口（19）处所述第二绝缘层（12）的坡度角小于第一绝缘层的坡度角。

Description

阵列基板及其制备方法、显示装置 技术领域
本公开涉及显示设备技术领域，具体涉及一种阵列基板及其制备方法、显示装置。
背景技术
显示装置的阵列基板中设有许多绝缘层，用于将不同的结构隔开。由有机绝缘材料(如聚乙烯、聚四氟乙烯等)构成的有机绝缘层具有工艺简单、成本低等优点，故获得了越来越多的应用。
但是，有机绝缘层的厚度往往较大，且其开口处的坡度角也较大，由此有机绝缘层上的光刻胶容易流动并聚集在开口边缘；这些聚集的光刻胶难以被彻底除去，因而会产生光刻胶残留，进而导致开口边缘不能形成正确的结构，影响显示。
例如，如图1、图2所示，液晶显示装置的阵列基板的边缘部设有连接区，用于使引线(栅极线引线、数据线引线2、公共电极线引线等)与驱动芯片相连。当用有机绝缘层1作为数据线引线2与像素电极间的钝化层时，有机绝缘层1在连接区要设置开口19，以使数据线引线2端部的接头21(PAD)暴露。为了使芯片能与接头21连接，连接区中有机绝缘层1的开口19必须较大，每个开口19对应多个数据线引线2的端部。在形成开口19后，还要继续沉积透明导电层3(如氧化铟锡层)以形成像素电极或公共电极，显然，开口19中的透明导电层3是应当被完全除去的。但如前所述，开口边缘有残留有光刻胶9，这些残留的光刻胶9下的透明导电层3不能被除去，从而会将数据线引线2相互导通，引起亮线等不良(DDS不良)。
发明内容
本公开针对现有的阵列基板中的有机绝缘层容易引起其他结构不良的问题，提供一种可避免其他结构不良的阵列基板及其制备方法、显示装置。
根据本公开的第一方面，提供了一种阵列基板，其包括绝缘层，所述绝缘层中设有开口，且所述绝缘层包括：
第一绝缘层；
设于第一绝缘层上的第二绝缘层，开口处所述第二绝缘层的坡度角小于第一绝缘层的坡度角。
根据一个实施例，所述绝缘层可以为有机绝缘层；所述第一绝缘层可以为第一有机绝缘层；所述第二绝缘层可以为第二有机绝缘层。
根据另一实施例，所述开口处第一有机绝缘层的坡度角可以为50～60度；所述开口处第二有机绝缘层的坡度角可以为40～50度；所述开口处第一有机绝缘层的坡度角与第二有机绝缘层的坡度角的差可以为5～15度。
根据又一实施例，所述第一有机绝缘层的厚度可以为1～2微米；所述第二有机绝缘层的厚度可以为1～2微米；所述有机绝缘层的厚度可以为2～3微米。
根据再一实施例，所述有机绝缘层的材料可以包括感光剂和成膜材料，且所述第一有机绝缘层和第二有机绝缘层中感光剂的含量可以不同。
根据实施例，所述有机绝缘层中的感光剂可以为负性感光剂；所述第一有机绝缘层中感光剂的含量可以大于第二有机绝缘层中感光剂的含量。
根据另外的实施例，所述有机绝缘层中的感光剂可以为正性感光剂；所述第一有机绝缘层中感光剂的含量可以小于第二有机绝缘层中感光剂的含量。
根据另一实施例，在所述第一有机绝缘层和第二有机绝缘层中，感光剂含量较高的层的感光剂的质量百分含量可以为3～5％；感光剂含量较低的层的感光剂的质量百分含量可以为1～3％；两层中感光剂的质量百分含量的差可以为1.5～2.5％。
根据又一实施例，所述阵列基板可以包括用于连接驱动芯片的连接区和位于所述连接区中的引线，所述有机绝缘层的至少部分开口设于连接区中；所述有机绝缘层位于所述引线上方，连接区中的有机绝缘层的每个开口中设有多条引线的端部；所述有机绝缘层上至少设有一个导电结构。
根据再一实施例，所述引线为数据线引线；所述有机绝缘层为设于数据线引线上的钝化层；所述导电结构为像素电极或公共电极。
根据本公开的第二方面，提供了一种上述阵列基板的制备方法，其包括：
形成所述第一绝缘层和第二绝缘层，并在所述第一绝缘层和第二绝缘层中形成开口。
根据实施例，所述形成所述第一绝缘层和第二绝缘层，并在所述第一绝缘层和第二绝缘层中形成开口包括：形成第一绝缘层；形成第二绝缘层；同时形成贯穿所述第一绝缘层和第二绝缘层的开口。
根据本公开的第三方面，提供了一种显示装置，其包括上述的阵列基板。
在本公开的阵列基板中，绝缘层(尤其是有机绝缘层)分为至少两个层(也可为更多层)，且在上的层坡度角较小，由此可使开口边缘的坡整体上变缓，呈阶梯状，这可减少光刻胶在开口边缘的聚集(即减少光刻胶残留)，进而确保位于绝缘层上层的其他结构可正确形成，减少DDS等不良的发生概率，改善产品质量。
附图说明
图1为现有的阵列基板在连接区的局部结构示意图；
图2为现有的阵列基板在连接区的局部剖面结构示意图；
图3为本公开的实施例的阵列基板在连接区的局部结构示意图；以及
图4为本公开的实施例的阵列基板在连接区的局部剖面结构示意图。
其中，附图标记为：1、有机绝缘层；11、第一有机绝缘层；12、第二有机绝缘层；19、开口；2、数据线引线；21、接头；3、导电层；9、光刻胶。
具体实施方式
为使本领域技术人员更好地理解本公开的技术方案，下面结合附图和具体实施方式对本公开作进一步详细描述。
如图3、图4所示，本实施例提供一种阵列基板，其包括绝缘层，绝缘层中设有开口19。
本实施例的阵列基板可为用于液晶显示装置、有机发光二极管显示装置等的阵列基板。在阵列基板中包括许多绝缘层，用于将不同层的结构隔开，在这些绝缘层中至少有一个设有开口19(或称过孔)，用以将其上下的结构电连接。
其中，上述绝缘层包括：第一绝缘层；设于第一绝缘层上的第二绝缘层，开口19处第二绝缘层的坡度角小于第一绝缘层的坡度角。
在一个示例中，上述绝缘层为有机绝缘层1，并且相应的，第一绝缘 层为第一有机绝缘层11，第二绝缘层为第二有机绝缘层12。因此，第一有机绝缘层11上设有第二有机绝缘层12，且开口19处第二有机绝缘层12的坡度角小于第一有机绝缘层11的坡度角。
也就是说，在本实施例的阵列基板中，至少有部分绝缘层可以为由有机绝缘材料构成的有机绝缘层1，该有机绝缘层1分为至少两个层，且在上的层坡度角较小，由此可使开口19边缘的坡整体上变缓，呈阶梯状，这可减少光刻胶在开口19边缘的聚集(即减少光刻胶残留)，进而确保位于有机绝缘层1上方的其他结构可正确形成，减少DDS等不良的发生概率，改善产品质量。
当然，上述的有机绝缘层1并不限于由两个层组成，其也可分为三个或更多的层。当有机绝缘层1由三个或更多的层组成时，越靠上的层的坡度角可以越小。当然，当有机绝缘层1包括三个或更多层时，也可有相邻的两层坡度角相同或坡度角为其他关系，但至少要保证其中有符合以上关系的第一有机绝缘层11和其上的第二有机绝缘层12。由于有机绝缘层1分为更多层时的实质情况与分为两层时相似，故在此不再详细描述。
在示例实施例中，开口19处第一有机绝缘层11的坡度角为50～60度；开口19处第二有机绝缘层12的坡度角为40～50度；开口19处第一有机绝缘层11的坡度角与第二有机绝缘层12的坡度角的差为5～15度。
如前所述，第一有机绝缘层11的坡度角应比第二有机绝缘层12的坡度角更大，而当两个层的坡度角处在以上范围时，可达到较好的防止光刻胶聚集的作用。
在示例实施例中，第一有机绝缘层11的厚度为1～2微米；第二有机绝缘层12的厚度为1～2微米；有机绝缘层1的厚度为2～3微米。
通常而言，有机绝缘层1的总厚度为2～3微米；在此情况下，其中两层的厚度可以处于以上的范围内，而其中两个层具体厚度的分配情况，可由本领域技术人员根据需要调整。
在示例实施例中，有机绝缘层1的材料包括感光剂和成膜材料，且第一有机绝缘层11和第二有机绝缘层12中感光剂的含量不同。
也就是说，有机绝缘层1可以是由类似“光刻胶”的可感光的材料构成的，这种有机绝缘层1包括用于形成膜材主体的成膜材料，以及具有感光性的感光剂，感光剂可对光照做出反应，并改变成膜材料的可溶性，从而只要对有机绝缘层1进行曝光、显影即可使其形成所需的图形，而不必 对其进行刻蚀。
当有机绝缘层1中含有感光剂时，只要改变感光剂的含量，即可相应的改变有机绝缘层1的坡度角。
具体的，对于使用负性感光剂的有机绝缘层1，第一有机绝缘层11中感光剂的含量大于第二有机绝缘层12中感光剂的含量。
其中，负性感光剂也是负性光刻胶中用的感光剂，其是指在受到光照后，可使有机绝缘层1变得不可溶的感光剂，在使用这种感光剂时，如下表1所示，感光剂的含量越大则所得的坡度角越大，因此需要第一有机绝缘层11中感光剂的含量较高。
表1、负性感光剂对坡度角的影响
Figure PCTCN2015086460-appb-000001
其中，以上表格中的有机绝缘层1使用的成膜材料主要为丙烯酸树脂，感光剂材料主要为丙二醇甲醚醋酸酯，三种有机绝缘层材料产品的生产厂家分别为：A有机绝缘层材料：DOW，B有机绝缘层材料：Dongjin；C有机绝缘层材料：JSR。当然，有机绝缘层1中还含有颜料等其他已知成分，在此不再详细描述。同时，各有机绝缘层1的开口19底部宽度、坡度角等，则是用扫描电镜对有机绝缘层1开口19处的剖面进行观察而得到的。
作为本实施例的可替换方式，有机绝缘层1中的感光剂为正性感光剂；则第一有机绝缘层11中感光剂的含量小于第二有机绝缘层12中感光剂的含量。
也就是说，也可采用正性感光剂，即采用受到光照后使有机绝缘层1变得可溶的感光剂，在使用正性感光剂时，感光剂的含量越大则所得的坡度角越小，因此需要第一有机绝缘层11中感光剂的含量较低。
当然，第一有机绝缘层11和第二有机绝缘层12中的感光剂和成膜材 料可以相同或者不同，并且感光剂的性质可以不同。例如，第一有机绝缘层11中的感光剂为正性感光剂，第二有机绝缘层12中的感光剂为负性感光剂，或者反之亦然，只要在开口19处第二有机绝缘层12的坡度角小于第一有机绝缘层11的坡度角即可。
在示例实施例中，在第一有机绝缘层11和第二有机绝缘层12中，感光剂含量较高的层的感光剂的质量百分含量为3～5％；感光剂含量较低的层的感光剂的质量百分含量为1～3％；两层中感光剂的质量百分含量的差为1.5～2.5％。
也就是说，当采用感光剂来调整有机绝缘层1的坡度角时，可使两层中的感光剂含量符合以上的条件，从而达到上述的坡度角范围。具体的，在使用负性感光剂时，可使第一绝缘层中的感光剂含量为3～5％，第二绝缘层中的感光剂含量为1～3％；而使用正性感光剂时，则使第一绝缘层中的感光剂含量为1～3％，第二绝缘层中的感光剂含量为3～5％。
在示例实施例中，本实施例的阵列基板包括用于连接驱动芯片的连接区和位于连接区中的引线，有机绝缘层1的至少部分开口19设于连接区中；有机绝缘层1位于引线上方，连接区中的有机绝缘层1的每个开口19中设有多条引线的端部；有机绝缘层1上至少设有一个导电结构。
也就是说，阵列基板的边缘部可设有用于使引线与驱动芯片相连的连接区，有机绝缘层1在该连接区中设有开口19，以使被其覆盖的引线的端部(如“接头21”)暴露并与驱动芯片相连；而且，连接区中的有机绝缘层1的每个开口19应对应多个引线的端部；同时，在阵列基板中，还包括位于该有机绝缘层1以上的至少一个其他的导电结构(如像素电极、公共电极等)。如前所述，在现有技术中，以上连接区中的有机绝缘层1的开口19很容易在边缘形成光刻胶残留，而这种光刻胶残留会使后续形成的导电结构图形不正确，从而将多条引线相互导通。而本实施例的阵列基板的有机绝缘层1开口19处的整体坡度角较小，故可避免光刻胶残留，从而避免各引线被相互导通。
在示例实施例中，引线为数据线引线2；有机绝缘层1为设于数据线引线2上的钝化层；导电结构为像素电极或公共电极。
也就是说，如图3、图4所示，有机绝缘层1可以为覆盖在数据线引线2上的钝化层，且此时在有机绝缘层1上还要继续形成像素电极或公共电极(依照阵列基板的具体形式决定)。之所以如此，是因为上述光刻胶残 留导致引线导通的问题，实际最多见于数据线引线2。
当然，在实际的阵列基板中还应包括栅绝缘层、层间绝缘层(位于像素电极与公共电极间)等其他结构，这些结构可能在连接区也有分布，但因为它们均是本领域技术人员已知的且与本公开无直接关系，故在此不再详细描述，而图中也未示出。
当然，本实施例的应用不限于此，例如，有机绝缘层1也可为覆盖栅极的栅绝缘层，此时引线为栅极线引线，有机绝缘层1上的导电结构可为数据线引线2、像素电极、公共电极等。或者，有机绝缘层1的开口19也可不只位于连接区中，而是在用于进行显示的显示区内也有分布(例如用于连接源漏极与有源区的开口)，当然，显示区中的开口一般不会导致不同的引线相连，但其可能导致其他的结构不良，故也适用本公开中的技术方案。
当然，本实施例中的绝缘层也可为无机材料构成的无机绝缘层，此时其也可分为坡度角不同的两层。只是由于通常有机绝缘层1厚度较大，比较容易产生上述光刻胶残留问题，故本实施例中均以有机绝缘层1为例进行说明。
本公开另外的实施例提供一种上述阵列基板的制备方法，其包括：
形成第一绝缘层和第二绝缘层，并在第一绝缘层和第二绝缘层中形成开口。
在示例实施例中，以上形成第一绝缘层和第二绝缘层，并在第一绝缘层和第二绝缘层中形成开口的步骤具体包括：
形成第一绝缘层；
形成第二绝缘层；
同时形成贯穿第一绝缘层和第二绝缘层的开口。
也就是说，可以在形成第一绝缘层和第二绝缘层之后，再统一在两个层中同时形成开口，从而简化工艺。当然，若先形成第一绝缘层并在其中形成开口，之后形成第二绝缘层并继续在其中形成开口也是可行的。
其中，以上的绝缘层可以为有机绝缘层，相应的，第一绝缘层为第一有机绝缘层，第二绝缘层为第二有机绝缘层。
具体的，在第一有机绝缘层和第二有机绝缘层中形成开口的方式是多样的，例如对于上述含有感光剂的有机绝缘层，可直接对其进行曝光、显影。由于形成开口的具体工艺是本领域技术人员已知的，故在此不再详细 描述。
但然，如果上述绝缘层不是有机绝缘层，则其形成开口的步骤还可包括涂布光刻胶、刻蚀、光刻胶剥离等其他步骤，在此不再详细描述。
本公开的实施例还提供一种显示装置，其包括上述的阵列基板。
具体的，本实施例提供的显示装置可为液晶显示面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (13)

  1. 一种阵列基板，包括绝缘层，所述绝缘层中设有开口，其中，所述绝缘层包括：
    第一绝缘层；
    设于第一绝缘层上的第二绝缘层，开口处所述第二绝缘层的坡度角小于第一绝缘层的坡度角。
  2. 根据权利要求1所述的阵列基板，其中，
    所述绝缘层为有机绝缘层；
    所述第一绝缘层为第一有机绝缘层；
    所述第二绝缘层为第二有机绝缘层。
  3. 根据权利要求2所述的阵列基板，其中，
    所述开口处第一有机绝缘层的坡度角为50～60度；
    所述开口处第二有机绝缘层的坡度角为40～50度；
    所述开口处第一有机绝缘层的坡度角与第二有机绝缘层的坡度角的差为5～15度。
  4. 根据权利要求2所述的阵列基板，其中，
    所述第一有机绝缘层的厚度为1～2微米；
    所述第二有机绝缘层的厚度为1～2微米；
    所述有机绝缘层的厚度为2～3微米。
  5. 根据权利要求2所述的阵列基板，其中，
    所述有机绝缘层的材料包括感光剂和成膜材料，且所述第一有机绝缘层和第二有机绝缘层中感光剂的含量不同。
  6. 根据权利要求5所述的阵列基板，其中，
    所述有机绝缘层中的感光剂为负性感光剂；
    所述第一有机绝缘层中感光剂的含量大于第二有机绝缘层中感光剂的含量。
  7. 根据权利要求5所述的阵列基板，其中，
    所述有机绝缘层中的感光剂为正性感光剂；
    所述第一有机绝缘层中感光剂的含量小于第二有机绝缘层中感光剂的含量。
  8. 根据权利要求5所述的阵列基板，其中，在所述第一有机绝缘层 和第二有机绝缘层中，
    感光剂含量较高的层的感光剂的质量百分含量为3～5％；
    感光剂含量较低的层的感光剂的质量百分含量为1～3％；
    两层中感光剂的质量百分含量的差为1.5～2.5％。
  9. 根据权利要求2至8中任意一项所述的阵列基板，其中，
    所述阵列基板包括用于连接驱动芯片的连接区和位于所述连接区内的引线，所述有机绝缘层的至少部分开口设于连接区中；
    所述有机绝缘层位于所述引线上方，连接区中的有机绝缘层的每个开口中设有多条引线的端部；
    所述有机绝缘层上至少设有一个导电结构。
  10. 根据权利要求9所述的阵列基板，其中，
    所述引线为数据线引线；
    所述有机绝缘层为设于数据线引线上的钝化层；
    所述导电结构为像素电极或公共电极。
  11. 一种阵列基板的制备方法，其中，所述阵列基板为权利要求1至10中任意一项所述的阵列基板，所述阵列基板的制备方法包括：
    形成所述第一绝缘层和第二绝缘层，并在所述第一绝缘层和第二绝缘层中形成开口。
  12. 根据权利要求11所述的阵列基板的制备方法，其中，所述形成所述第一绝缘层和第二绝缘层，并在所述第一绝缘层和第二绝缘层中形成开口包括：
    形成第一绝缘层；
    形成第二绝缘层；
    同时形成贯穿所述第一绝缘层和第二绝缘层的开口。
  13. 一种显示装置，包括：
    权利要求1至10中任意一项所述的阵列基板。
PCT/CN2015/086460 2015-04-07 2015-08-10 阵列基板及其制备方法、显示装置 Ceased WO2016161731A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/914,076 US20170062486A1 (en) 2015-04-07 2015-08-10 Array substrate and manufacturing method thereof, display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510161244.2 2015-04-07
CN201510161244.2A CN104766869B (zh) 2015-04-07 2015-04-07 阵列基板及其制备方法、显示装置

Publications (1)

Publication Number Publication Date
WO2016161731A1 true WO2016161731A1 (zh) 2016-10-13

Family

ID=53648602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/086460 Ceased WO2016161731A1 (zh) 2015-04-07 2015-08-10 阵列基板及其制备方法、显示装置

Country Status (3)

Country Link
US (1) US20170062486A1 (zh)
CN (1) CN104766869B (zh)
WO (1) WO2016161731A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104766869B (zh) * 2015-04-07 2018-01-26 合肥鑫晟光电科技有限公司 阵列基板及其制备方法、显示装置
CN109545800B (zh) * 2018-11-23 2021-03-23 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
US11692271B2 (en) * 2019-10-03 2023-07-04 The Board Of Trustees Of The University Of Illinois Immersion cooling with water-based fluid using nano-structured coating
CN114975475B (zh) * 2021-02-24 2026-02-03 合肥鑫晟光电科技有限公司 驱动背板及其制备方法、显示装置
US20240153968A1 (en) * 2022-01-25 2024-05-09 Beijing Boe Display Technology Co., Ltd. Display substrate, method for manufacturing the same, and display device
WO2024065738A1 (zh) * 2022-09-30 2024-04-04 京东方科技集团股份有限公司 发光基板及其制作方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1797163A (zh) * 2004-12-31 2006-07-05 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法
CN101398589A (zh) * 2007-09-26 2009-04-01 株式会社日立显示器 液晶显示装置
US20090295684A1 (en) * 2008-05-28 2009-12-03 Jungsup Yum Flexible film and display device including the same
JP2014132337A (ja) * 2013-01-04 2014-07-17 Samsung Display Co Ltd 薄膜トランジスター表示板
CN104766869A (zh) * 2015-04-07 2015-07-08 合肥鑫晟光电科技有限公司 阵列基板及其制备方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3448838B2 (ja) * 1995-06-30 2003-09-22 富士通株式会社 磁気抵抗効果型ヘッドの製造方法
US6574979B2 (en) * 2000-07-27 2003-06-10 Fakieh Research & Development Production of potable water and freshwater needs for human, animal and plants from hot and humid air
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US7224937B2 (en) * 2004-07-16 2007-05-29 Benq Corporation Mobile station apparatus capable of changing access control classes due to low battery condition for power saving and method of the same
KR20110133251A (ko) * 2010-06-04 2011-12-12 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5835696B2 (ja) * 2012-09-05 2015-12-24 株式会社東芝 半導体装置およびその製造方法
KR102017204B1 (ko) * 2012-11-01 2019-09-03 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101570685B1 (ko) * 2013-07-19 2015-11-23 연세대학교 산학협력단 기판 상의 단결정 콜로이드 단층 제조 방법 및 그 기판을 포함하는 디스플레이 소자
KR20150101511A (ko) * 2014-02-26 2015-09-04 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1797163A (zh) * 2004-12-31 2006-07-05 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法
CN101398589A (zh) * 2007-09-26 2009-04-01 株式会社日立显示器 液晶显示装置
US20090295684A1 (en) * 2008-05-28 2009-12-03 Jungsup Yum Flexible film and display device including the same
JP2014132337A (ja) * 2013-01-04 2014-07-17 Samsung Display Co Ltd 薄膜トランジスター表示板
CN104766869A (zh) * 2015-04-07 2015-07-08 合肥鑫晟光电科技有限公司 阵列基板及其制备方法、显示装置

Also Published As

Publication number Publication date
US20170062486A1 (en) 2017-03-02
CN104766869B (zh) 2018-01-26
CN104766869A (zh) 2015-07-08

Similar Documents

Publication Publication Date Title
WO2016161731A1 (zh) 阵列基板及其制备方法、显示装置
CN104298040B (zh) 一种coa基板及其制作方法和显示装置
US9958747B2 (en) Array substrate and manufacturing method thereof, display panel and display device
US9508867B2 (en) Thin film transistor, array substrate, method of fabricating same, and display device
WO2016065797A1 (zh) 一种coa基板及其制作方法和显示装置
CN103779360A (zh) 显示基板及其制作方法、显示装置
CN1702531A (zh) 液晶显示器件及其制造方法
WO2015188492A1 (zh) 阵列基板及显示装置
CN104078470B (zh) 阵列基板及其制作方法、显示装置
WO2016011727A1 (zh) 薄膜晶体管及其制作方法、阵列基板和显示装置
CN109283758B (zh) 阵列基板及其制作方法、显示装置
CN111739896B (zh) 显示基板及其制备方法、显示面板
US20160358937A1 (en) Array Substrate and Manufacturing Method Thereof and Display Panel
CN103955084B (zh) 一种显示面板及其制备方法、显示装置
JP6096390B2 (ja) 有機発光ダイオード表示装置における金属配線のショートを回避する方法
CN104952792A (zh) Tft基板结构的制作方法
CN104934443A (zh) 阵列基板及其制造方法、显示装置
CN104133313A (zh) 阵列基板及其制备方法、液晶显示装置
US9799683B2 (en) Array substrate, preparation method thereof and display device
WO2016023303A1 (zh) 阵列基板及其制造方法、显示装置
CN104465652B (zh) 一种阵列基板、显示装置及阵列基板的制作方法
CN104392920A (zh) Tft阵列基板及其制作方法、显示装置
WO2019218822A1 (zh) 薄膜晶体管及其制备方法、阵列基板、显示装置
US20180108686A1 (en) Display substrate and manufacturing method thereof, display panel and display device
CN104409510A (zh) 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14914076

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15888285

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15888285

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 15888285

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 12/04/2018)