WO2016158111A1 - Élément électroluminescent à semi-conducteur et procédé de fabrication correspondant - Google Patents

Élément électroluminescent à semi-conducteur et procédé de fabrication correspondant Download PDF

Info

Publication number
WO2016158111A1
WO2016158111A1 PCT/JP2016/055617 JP2016055617W WO2016158111A1 WO 2016158111 A1 WO2016158111 A1 WO 2016158111A1 JP 2016055617 W JP2016055617 W JP 2016055617W WO 2016158111 A1 WO2016158111 A1 WO 2016158111A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
layer
semiconductor
region
electrode
Prior art date
Application number
PCT/JP2016/055617
Other languages
English (en)
Japanese (ja)
Inventor
研 片岡
Original Assignee
ウシオ電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015073106A external-priority patent/JP2016192529A/ja
Priority claimed from JP2015074128A external-priority patent/JP2016195171A/ja
Application filed by ウシオ電機株式会社 filed Critical ウシオ電機株式会社
Publication of WO2016158111A1 publication Critical patent/WO2016158111A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention a pour objet d'obtenir un élément électroluminescent à semi-conducteur présentant un rendement élevé. Ledit élément électroluminescent à semi-conducteur comprend : un substrat ; une première couche semi-conductrice, une couche active et une seconde couche semi-conductrice qui sont formées sur une couche supérieure du substrat ; et une première électrode. La couche active et/ou la première couche semi-conductrice présentent, dans la direction parallèle à la surface du substrat, une surface irrégulière dans une première région, et une seconde région différente de la première région est conçue à partir d'une surface plate. Dans la seconde région, la première électrode est formée en contact avec la première couche semi-conductrice, et dans un état isolé de la couche active et de la seconde couche semi-conductrice. Dans la seconde région, la couche active et la seconde couche semi-conductrice ne sont pas formées sur la couche supérieure de la première couche semi-conductrice, ladite couche supérieure étant positionnée dans une région en contact avec la première électrode.
PCT/JP2016/055617 2015-03-31 2016-02-25 Élément électroluminescent à semi-conducteur et procédé de fabrication correspondant WO2016158111A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015073106A JP2016192529A (ja) 2015-03-31 2015-03-31 半導体発光素子及びその製造方法
JP2015-074128 2015-03-31
JP2015-073106 2015-03-31
JP2015074128A JP2016195171A (ja) 2015-03-31 2015-03-31 半導体発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2016158111A1 true WO2016158111A1 (fr) 2016-10-06

Family

ID=57004981

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/055617 WO2016158111A1 (fr) 2015-03-31 2016-02-25 Élément électroluminescent à semi-conducteur et procédé de fabrication correspondant

Country Status (1)

Country Link
WO (1) WO2016158111A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
JP2008130606A (ja) * 2006-11-16 2008-06-05 Sony Corp 半導体発光素子、半導体発光素子の製造方法、光源セルユニット、バックライト、照明装置、ディスプレイ、電子機器、半導体素子および半導体素子の製造方法
JP2010182832A (ja) * 2009-02-04 2010-08-19 Panasonic Corp 窒化物半導体発光素子およびその製造方法
JP2014158024A (ja) * 2013-02-14 2014-08-28 Samsung Electronics Co Ltd 発光素子パッケージ及びその製造方法
JP2014187196A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 窒化物半導体発光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
JP2008130606A (ja) * 2006-11-16 2008-06-05 Sony Corp 半導体発光素子、半導体発光素子の製造方法、光源セルユニット、バックライト、照明装置、ディスプレイ、電子機器、半導体素子および半導体素子の製造方法
JP2010182832A (ja) * 2009-02-04 2010-08-19 Panasonic Corp 窒化物半導体発光素子およびその製造方法
JP2014158024A (ja) * 2013-02-14 2014-08-28 Samsung Electronics Co Ltd 発光素子パッケージ及びその製造方法
JP2014187196A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 窒化物半導体発光装置

Similar Documents

Publication Publication Date Title
US9871164B2 (en) Nanostructure light emitting device and method of manufacturing the same
JP4098307B2 (ja) 窒化物半導体素子及び製造方法
JP5995302B2 (ja) 窒化物半導体発光素子の製造方法
JP5246213B2 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法
JP4928874B2 (ja) 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
WO2014178248A1 (fr) Element electroluminescent a semi-conducteurs de nitrure
JP5273081B2 (ja) 半導体発光素子
JP4451846B2 (ja) 窒化物半導体素子の製造方法
JP6120204B2 (ja) エピタキシャルウェハ及びその製造方法、紫外発光デバイス
JP4254157B2 (ja) 窒化物半導体素子及び窒化物半導体素子の製造方法
JP2021019075A (ja) 発光装置の製造方法及び発光装置
JP4928811B2 (ja) 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
JP2010272593A (ja) 窒化物半導体発光素子及びその製造方法
JP2009004524A (ja) 窒化物系半導体レーザ素子及び窒化物系半導体レーザ素子の作製方法
JP4743989B2 (ja) 半導体素子およびその製造方法ならびに半導体基板の製造方法
JP4255168B2 (ja) 窒化物半導体の製造方法及び発光素子
WO2016158111A1 (fr) Élément électroluminescent à semi-conducteur et procédé de fabrication correspondant
JP5149093B2 (ja) ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法
JP3562478B2 (ja) 窒化物半導体の成長方法及びそれを用いた素子
JP2016195171A (ja) 半導体発光素子及びその製造方法
JP2016192529A (ja) 半導体発光素子及びその製造方法
KR101072199B1 (ko) 발광소자 및 그 제조방법
JP2013138093A (ja) 窒化物半導体素子及びその製造方法
JP5027743B2 (ja) 半導体デバイス、窒化物半導体基板及びその製造方法
JP4057473B2 (ja) 化合物半導体発光素子及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16771995

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16771995

Country of ref document: EP

Kind code of ref document: A1