WO2016147356A1 - 芳香族スルホニウム塩化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 - Google Patents
芳香族スルホニウム塩化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 Download PDFInfo
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- WO2016147356A1 WO2016147356A1 PCT/JP2015/058119 JP2015058119W WO2016147356A1 WO 2016147356 A1 WO2016147356 A1 WO 2016147356A1 JP 2015058119 W JP2015058119 W JP 2015058119W WO 2016147356 A1 WO2016147356 A1 WO 2016147356A1
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- carbon atoms
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- sulfonium salt
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- aromatic sulfonium
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- 0 *c1cc(S(C(C(Oc2c3)=O)=Cc2ccc3O*)c2c(*)c(*)c(*)c(*)c2*)c(*)c(*)c1* Chemical compound *c1cc(S(C(C(Oc2c3)=O)=Cc2ccc3O*)c2c(*)c(*)c(*)c(*)c2*)c(*)c(*)c1* 0.000 description 2
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/04—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring
- C07D311/06—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring with oxygen or sulfur atoms directly attached in position 2
- C07D311/08—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring with oxygen or sulfur atoms directly attached in position 2 not hydrogenated in the hetero ring
- C07D311/16—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring with oxygen or sulfur atoms directly attached in position 2 not hydrogenated in the hetero ring substituted in position 7
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/04—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring
- C07D311/06—Benzo[b]pyrans, not hydrogenated in the carbocyclic ring with oxygen or sulfur atoms directly attached in position 2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/29—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings
- C07C309/30—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings of six-membered aromatic rings substituted by alkyl groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/687—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Definitions
- the present invention relates to an aromatic sulfonium salt compound, a photoacid generator, a resist composition, a cationic polymerization initiator, and a cationically polymerizable composition. More specifically, the photoacid has low corrosiveness to a substrate and excellent photolithography characteristics.
- the present invention relates to an aromatic sulfonium salt compound useful for a generator and a cationic polymerization agent, a photoacid generator using the same, a resist composition, a cationic polymerization initiator, and a cationic polymerization agent composition.
- a sulfonium salt compound is a substance that generates an acid when irradiated with energy rays such as light.
- Patent Document 1 discloses a coumarin derivative. However, it is disclosed as a hypoglycemic agent, and it is only described that it is useful for the treatment and prevention of diabetes. There is no description that it can be used as a photoacid generator.
- Patent Document 2 a cationic polymerization initiator composed of a sulfonium salt having a coumarin skeleton is used.
- Patent Document 3 a heterocyclic-containing sulfonium salt useful as a photocationic polymerization initiator, an acid generator for a chemically amplified resist, or the like. Is disclosed. However, as a substituent of the coumarin skeleton, an alkoxy group and an arylalkoxy group are not suggested, and a structure having a sulfonium at the 3-position of the coumarin skeleton is not suggested.
- the resist composition and the cationic polymerizable composition are used by laminating or coating on a substrate as a film or liquid. For this reason, photoacid generators and cationic polymerizable compositions used in resist compositions and cationic polymerizable compositions have low corrosiveness to the substrate and are required to have excellent photolithography characteristics. However, the relationship between these points and the types and positions of substituents has not been sufficiently studied in Patent Documents 1 to 3.
- an object of the present invention is to provide an aromatic sulfonium salt compound that is useful for a photoacid generator and a cationic polymerization agent that have low corrosiveness to the substrate and is excellent in photolithography characteristics, a photoacid generator using the same, and a resist composition It is in providing a cationic polymerization initiator and a cationic polymerization agent composition.
- the present inventors have developed a photoacid generator and a cationic polymerization initiator containing an aromatic sulfonium salt compound having an organic sulfonate anion having a predetermined structure. If it exists, it discovered that the said subject could be solved and came to complete this invention.
- the aromatic sulfonium salt compound of the present invention has the following general formula (I), (In the formula (I), R 1 to R 10 each independently represents a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an alkyl group having 1 to 18 carbon atoms which may have a substituent, An aryl group having 6 to 20 carbon atoms which may have a substituent or an arylalkyl group having 7 to 20 carbon atoms which may have a substituent, represented by R 1 to R 10
- the methylene chain in the alkyl group having 1 to 18 carbon atoms, the aryl group having 6 to 20 carbon atoms, and the arylalkyl group having 7 to 20 carbon atoms is —O—, —S—, —CO—, —CO.
- R 11 to R 15 each independently represents a hydrogen atom, an optionally substituted alkoxy group having 1 to 18 carbon atoms, or a substituent.
- Arylalkoxy having 7 to 20 carbon atoms which may have a group Represents an optionally substituted thioalkyl group having 1 to 18 carbon atoms, an optionally substituted arylthioalkyl group having 7 to 20 carbon atoms, or —NRR ′, and R and R ′
- R and R ′ Each independently represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and one or more of R 11 to R 15 are not hydrogen atoms
- X 1 - are those characterized by being represented by the representative) a monovalent organic sulfonic acid anions.
- aromatic sulfonium salt compounds of the present invention are represented by the following general formula (II), (In the formula (II), R 1 to R 10 and X 1 — are the same as those in the general formula (I), and Y is an alkyl group having 1 to 18 carbon atoms or aryl having 7 to 20 carbon atoms. An alkyl group)).
- the photoacid generator of the present invention is characterized by comprising the aromatic sulfonium salt compound of the present invention.
- the resist composition of the present invention is characterized by containing the photoacid generator of the present invention.
- the resist composition of the present invention is preferably an i-line positive type or a negative type.
- the cationic polymerization initiator of the present invention is characterized by comprising the aromatic sulfonium salt compound of the present invention.
- the cationically polymerizable composition of the present invention is characterized by containing the cationic polymerization initiator of the present invention.
- an aromatic sulfonium salt compound useful as a photoacid generator and a cationic polymerization agent having low corrosiveness to a substrate and excellent in photolithography properties, a photoacid generator using the same, a resist composition, a cation A polymerization initiator and a cationic polymerization agent composition can be provided.
- the aromatic sulfonium salt compound of the present invention has the following general formula (I), (In the formula (I), R 1 to R 10 each independently represents a hydrogen atom, a halogen atom, a hydroxyl group, a nitro group, a cyano group, an alkyl group having 1 to 18 carbon atoms which may have a substituent, An aryl group having 6 to 20 carbon atoms which may have a substituent or an arylalkyl group having 7 to 20 carbon atoms which may have a substituent, represented by R 1 to R 10
- the methylene chain in the alkyl group having 1 to 18 carbon atoms, the aryl group having 6 to 20 carbon atoms, and the arylalkyl group having 7 to 20 carbon atoms is —O—, —S—, —CO—, —CO.
- R 11 to R 15 each independently represents a hydrogen atom, an optionally substituted alkoxy group having 1 to 18 carbon atoms, or a substituent.
- examples of the halogen atom represented by R 1 to R 10 include fluorine, chlorine, bromine and iodine.
- the alkyl group having 1 to 18 carbon atoms which may have a substituent represented by R 1 to R 10 includes methyl, ethyl, propyl, isopropyl, butyl, s-butyl, t-butyl, isobutyl, pentyl, isopentyl, t-pentyl, hexyl, cyclohexyl, isohexyl, 2-ethylhexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, isotridecyl, tetradecyl, hexadecyl, heptadecyl, octadecyl, 1- Adamantyl, 2-adamantyl, 2-methyl-1-adamantyl, 2-methyl-2-adamantyl, 2-ethyl-1-adamantyl, 2-ethy
- the aryl group having 6 to 20 carbon atoms which may have a substituent represented by R 1 to R 10 includes phenyl, naphthyl, 2-methylphenyl, 3-methylphenyl. 4-methylphenyl, 4-vinylphenyl, 3-isopropylphenyl, 4-isopropylphenyl, 4-butylphenyl, 4-isobutylphenyl, 4-t-butylphenyl, 4-hexylphenyl, 4-cyclohexylphenyl, 4- Octylphenyl, 4- (2-ethylhexyl) phenyl, 4-stearylphenyl, 2,3-dimethylphenyl, 2,4-dimethylphenyl, 2,5-dimethylphenyl, 2,6-dimethylphenyl, 3,4-dimethyl Phenyl, 3,5-dimethylphenyl, 2,4-di-t-butylphenyl, cyclohexyl
- the arylalkyl group having 7 to 20 carbon atoms which may have a substituent represented by R 1 to R 10 includes benzyl, phenethyl, phenacyl, 2-phenylpropane-2 -Yl, diphenylmethyl, triphenylmethyl, styryl, cinnamyl, 2-hydroxybenzyl, 2-hydroxyphenethyl, 2-hydroxyphenacyl, 2-phenoxyethyl, 2-phenylthioethyl and the like.
- Specific examples of the substituent that can be substituted on the arylalkyl group having 7 to 20 carbon atoms which may be present include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, pentyl, isopentyl, t-pentyl, neopentyl, hexyl, isohexyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl, undecyl, dodecyl, tridecyl, isotridecyl, myristyl, palmityl, stearyl, cyclopropyl, cyclohexyl, 1-
- the methylene chain in the arylalkyl group having 7 to 20 carbon atoms which may be present may be interrupted by —O—, —S—, —CO—, —CO—O— or O—CO—. Good.
- the alkoxy group having 1 to 18 carbon atoms which may have a substituent represented by R 11 to R 15 includes methoxy, ethoxy, propyloxy, isopropyloxy, butyloxy, s- Butyloxy, t-butyloxy, isobutyloxy, pentyloxy, isopentyloxy, t-pentyloxy, hexyloxy, heptyloxy, octyloxy, 2-ethylheptyloxy, cyclohexyloxy, cyclohexylmethyloxy, tetrahydrofuranyloxy, tetrahydropyranyl Examples include oxy. These may be substituted with a hydroxyl group, a nitro group, a cyano group, and a halogen atom such as fluorine, chlorine, bromine or iodine.
- the arylalkoxy group having 7 to 20 carbon atoms which may have a substituent represented by R 11 to R 15 includes benzyloxy, phenethyloxy, phenylpropyloxy, phenacyloxy. , Diphenylmethyloxy, triphenylmethyloxy and the like. These may be substituted with a hydroxyl group, a nitro group, a cyano group, and a halogen atom such as fluorine, chlorine, bromine or iodine.
- the thioalkyl group having 1 to 18 carbon atoms which may have a substituent represented by R 11 to R 15 includes methylthio, ethylthio, propylthio, isopropylthio, butylthio, s-butylthio.
- T-butylthio isobutylthio, pentylthio, isopentylthio, t-pentylthio, hexylthio, heptylthio, octylthio, 2-ethylheptylthio, cyclohexylthio, cyclohexylmethylthio, tetrahydrothienyl and the like.
- These may be substituted with a hydroxyl group, a nitro group, a cyano group, and a halogen atom such as fluorine, chlorine, bromine or iodine.
- the arylthioalkyl group having 7 to 20 carbon atoms which may have a substituent represented by R 11 to R 15 includes benzylthio, phenethylthio, phenylpropylthio, phenacylthio, diphenylmethylthio. , Triphenylmethylthio and the like. These may be substituted with a hydroxyl group, a nitro group, a cyano group, and a halogen atom such as fluorine, chlorine, bromine or iodine.
- R and R ′ each independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or 6 to 6 carbon atoms.
- 12 aryl groups are represented.
- the alkyl group having 1 to 10 carbon atoms represented by R and R ′ include those having 1 to 10 carbon atoms among the alkyl groups having 1 to 18 carbon atoms represented by R 1 to R 10 above.
- Examples of the aryl group having 6 to 12 carbon atoms represented by R and R ′ include the aryl groups having 6 to 20 carbon atoms represented by R 1 to R 10 above. Examples thereof are those having 6 to 12 carbon atoms.
- R and R ′ may be bonded to each other to form a ring.
- examples of the organic sulfonate anion represented by X 1 — include methanesulfonate anion, fluorosulfonate anion, benzenesulfonate anion, toluenesulfonate anion, 1- Naphthylsulfonic acid anion, 2-naphthylsulfonic acid anion, trifluoromethanesulfonic acid anion, pentafluoroethanesulfonic acid anion, heptafluoropropanesulfonic acid anion, nonafluorobutanesulfonic acid anion, undecafluoropentanesulfone Acid anion, tridecafluorohexanesulfonate anion, pentadecafluoroheptanesulfonate anion, heptadecafluorooctanesulfonate anion, perfluoro-4-ethylcyclohexanes
- aromatic sulfonium salt compound represented by the general formula (I) include the following structures.
- the aromatic sulfonium salt compounds represented by the general formula (I) those having a Hammett acidity function (H 0 ) of acid species generated after photolysis of ⁇ 17 or more are preferable because a fine pattern can be obtained.
- the Hammett acidity function (H 0 ) is a numerical value that quantitatively represents the strength of the acid-base of the solution, and is used to measure the pH of a particularly acidic deep solution.
- the following formula (b) It is expressed as Various methods are known as a method for measuring the Hammett acidity function (H 0 ).
- the aromatic sulfonium salt compound of the present invention has activities such as EUV (Extreme Ultra-Violet), X-ray, F 2 , ArF, KrF, i-line, h-line, g-line and other deep ultraviolet rays, electron beam, radiation, high-frequency, etc. It has the property of releasing a Lewis acid when irradiated with energy rays, and can be decomposed or polymerized by acting on an acid-reactive organic substance.
- the aromatic sulfonium salt compound of the present invention can be used as a photoacid generator for positive or negative photoresists, or for the production of flat plates, relief printing plates, printed circuit boards, ICs, LSIs, relief images, It is useful as a wide range of cationic polymerization initiators such as image formation such as image duplication, photo-curable inks, paints and adhesives.
- the photoacid generator of the present invention is composed of the aromatic sulfonium salt compound of the present invention.
- the photoacid generator of the present invention can be used for cleavage of chemical bonds such as acid-reactive organic substances and ester groups or ether groups in acrylic resins.
- the photoacid generator of the present invention is used with respect to an acid-reactive organic substance, the amount used is not particularly limited, but is preferably 0.00 with respect to 100 parts by mass of the acid-reactive organic substance. It is used in a proportion of 01 to 100 parts by weight, more preferably 0.05 to 20 parts by weight. If the amount of the photoacid generator used is less than 0.01 parts by mass, the sensitivity and developability may decrease.
- the blending amount can be increased or decreased from the above range depending on factors such as the nature of the acid-reactive organic substance, the light irradiation intensity, the time required for the reaction, the physical properties, and the cost.
- the resist composition of the present invention comprises an aromatic sulfonium salt compound of the present invention as an essential photoacid generator together with a resin whose solubility in a developer is changed by the action of an acid (hereinafter also referred to as “resist base resin”). It is a resist composition to be contained.
- the resist composition of the present invention is particularly useful as a chemically amplified resist. For chemically amplified resists, the polarity change induced by the deprotection reaction of the resist base resin side chains, such as the cleavage of chemical bonds such as ester groups or acetal groups, due to the action of the acid generated from the photoacid generator upon exposure.
- the resist base resins are used alone or in combination.
- the resist base resin used in the resist composition of the present invention is not particularly limited, but preferably has a structure having a small absorption coefficient of the wavelength of the active energy ray and high etching resistance.
- the resist base resin examples include polyhydroxystyrene and derivatives thereof; polyacrylic acid and derivatives thereof; polymethacrylic acid and derivatives thereof; and two or more formed from hydroxystyrene, acrylic acid, methacrylic acid and derivatives thereof Copolymer; two or more copolymers selected from hydroxystyrene, styrene and derivatives thereof; selected from polyolefins and derivatives thereof, cycloolefins and derivatives thereof, maleic anhydride, and acrylic acid and derivatives thereof Three or more copolymers; three or more copolymers selected from cycloolefin and derivatives thereof, maleimide, and acrylic acid and derivatives thereof; polynorbornene; one or more selected from the group consisting of metathesis ring-opening polymers The height of Polymer; and silicone resins.
- resist base resins include, for example, claims 8 to 11 of JP-A No. 2003-192665, claim 3 of JP-A No. 2004-323704, JP-A No. 10-10733, JP-A No. 2010-15079, and JP-A No. 2010-15079. 2010-15101 and the like.
- the polystyrene-reduced weight average molecular weight (Mw) of the resist base resin by gel permeation chromatography (GPC) is usually 1,500 to 300,000, preferably 2,000 to 200,000, more preferably 3,000 to 100. , 000.
- Mw weight average molecular weight
- GPC gel permeation chromatography
- a high molecular polymer in which a protective group that decomposes by the action of an acid is introduced into the resist base resin is used.
- Protecting groups include tertiary alkyl groups, trialkylsilyl groups, oxoalkyl groups, aryl group-substituted alkyl groups, tetrahydropyran-2-yl groups and other heteroalicyclic groups, tertiary alkylcarbonyl groups, and tertiary alkylcarbonylalkyls.
- a resin obtained by reacting the resist base resin with a crosslinking agent is used.
- the crosslinking agent can be arbitrarily selected from those conventionally used as a crosslinking agent.
- an amino resin having a hydroxyl group or an alkoxyl group such as a melamine resin, a urea resin, a guanamine resin, or a glycoluril.
- These may be those obtained by reacting melamine, urea, guanamine, glycoluril, succinylamide, or ethyleneurea with formalin in boiling water to form methylol, or further reacting it with a lower alcohol to produce alkoxylation.
- crosslinking agent examples thereof include Nicarak MX-750, Nicarac MW-30, Nicarac MX-290 (manufactured by Sanwa Chemical Co., Ltd.).
- the aromatic sulfonium salt compound of the present invention When used as a photoacid generator, it may be used in combination with another photoacid generator such as an iodonium salt compound or a sulfonium compound.
- the amount used in combination is preferably 10 to 200 parts by mass with respect to 100 parts by mass of the aromatic sulfonium salt compound of the present invention.
- the resist composition of the present invention includes a photoacid generator other than the aromatic sulfonium salt compound of the present invention, a monomer having an unsaturated bond, a chain transfer agent, a surfactant, a thermoplastic organic polymer, and a thermal polymerization inhibitor.
- additives such as a stabilizer, a sensitizer, a plasticizer, an adhesion promoter, an antistatic agent, a lubricant, a crystallization agent, a dispersant, a leveling agent, and a silane coupling agent can be used.
- the use amount of these various additives is preferably 50% by mass or less in the resist composition of the present invention.
- the resist composition of the present invention is usually dissolved in a solvent so that the total solid content is usually 5 to 50% by mass, preferably 10 to 25% by mass, and then, for example, the pore size is 0.2 ⁇ m. Adjust by filtering through a degree filter.
- the resist composition of the present invention is prepared by a method such as mixing, dissolving or kneading a photoacid generator comprising the aromatic sulfonium salt compound of the present invention, another photoacid generator, a resist base resin and other optional components. can do.
- the aromatic sulfonium salt compounds of the present invention are g-line (436 nm), h-line (405 nm), i-line (365 nm), visible It can be suitably used in a resist that uses light rays or the like.
- the resist composition of the present invention is coated on a substrate such as silicon by an appropriate coating method such as a spinner or coater, then exposed through a predetermined mask, post-baked to improve the apparent sensitivity of the resist, and developed. By doing so, a good resist pattern can be obtained.
- the cationic polymerization initiator of the present invention is composed of the aromatic sulfonium salt compound of the present invention.
- the amount used is not particularly limited, but is preferably 0.01 to 100 parts by mass, more preferably 0.05 to 20 parts by mass with respect to 100 parts by mass of the cationically polymerizable compound. In this case, if the amount of the cationic polymerization initiator used is less than 0.01 parts by mass, the sensitivity may decrease, whereas if it exceeds 20 parts by mass, the transparency to radiation may decrease.
- the compounding amount can be increased or decreased from the above range depending on factors such as the properties of the cationic polymerizable compound, the light irradiation intensity, the time required for the reaction, the physical properties, and the cost.
- the cationically polymerizable composition of the present invention is a composition containing the cationic polymerization initiator of the present invention and a cationically polymerizable compound.
- the cationically polymerizable compound means a compound that undergoes polymerization or a crosslinking reaction by a cationic polymerization initiator activated by light irradiation, and is used alone or in combination of two or more.
- Examples of the cationic polymerizable compound include an epoxy compound, an oxetane compound, a cyclic lactone compound, a cyclic acetal compound, a cyclic thioether compound, a spiro orthoester compound, a vinyl compound, and the like, and one or more of these are used.
- an epoxy compound an oxetane compound, a cyclic lactone compound, a cyclic acetal compound, a cyclic thioether compound, a spiro orthoester compound, a vinyl compound, and the like, and one or more of these are used.
- epoxy compounds and oxetane compounds that are easy to obtain and convenient for handling are suitable.
- alicyclic epoxy compounds, aromatic epoxy compounds, aliphatic epoxy compounds, and the like are suitable as the epoxy compounds.
- Examples of the alicyclic epoxy compound include cyclohexene oxide and cyclopentene oxide obtained by epoxidizing a polyglycidyl ether of a polyhydric alcohol having at least one alicyclic ring or a cyclohexene or cyclopentene ring-containing compound with an oxidizing agent. Containing compounds.
- UVR-6100, UVR-6105, UVR-6110, UVR-6128, UVR-6200 manufactured by Union Carbide
- an epoxy resin having a cyclohexene oxide structure is preferable in terms of curability (curing speed).
- aromatic epoxy compound examples include polyhydric phenol having at least one aromatic ring or polyglycidyl ether of an alkylene oxide adduct thereof, such as bisphenol A, bisphenol F, or further alkylene oxide.
- alkylene oxide adduct thereof such as bisphenol A, bisphenol F, or further alkylene oxide.
- examples thereof include glycidyl ether and epoxy novolac resin of the added compound.
- aliphatic epoxy compound examples include synthesized by vinyl polymerization of a polyglycidyl ether of an aliphatic polyhydric alcohol or an alkylene oxide adduct thereof, a polyglycidyl ester of an aliphatic long-chain polybasic acid, glycidyl acrylate or glycidyl methacrylate.
- examples thereof include homopolymers, copolymers synthesized by vinyl polymerization of glycidyl acrylate or glycidyl methacrylate and other vinyl monomers.
- Typical compounds include 1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, tetraglycidyl ether of sorbitol, dipentaerythritol
- glycidyl ethers of polyhydric alcohols such as hexaglycidyl ether, diglycidyl ether of polyethylene glycol and diglycidyl ether of polypropylene glycol, and aliphatic polyhydric alcohols such as propylene glycol, trimethylolpropane and glycerin
- monoglycidyl ethers of higher aliphatic alcohols phenols, cresols, butylphenols, monoglycidyl ethers of polyether alcohols obtained by adding alkylene oxides to these, glycidyl esters of higher fatty acids, epoxidized soybean oil, epoxy Examples include octyl stearate, butyl epoxy stearate, and epoxidized polybutadiene.
- oxetane compound examples include the following compounds. 3-ethyl-3-hydroxymethyloxetane, 3- (meth) allyloxymethyl-3-ethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, 4-fluoro- [1- (3-ethyl-3 -Oxetanylmethoxy) methyl] benzene, 4-methoxy- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, [1- (3-ethyl-3-oxetanylmethoxy) ethyl] phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxetanylmethyl) ether
- oxetane compounds are preferable because they are effective when used particularly when flexibility is required.
- cationically polymerizable compounds include cyclic lactone compounds such as ⁇ -propiolactone and ⁇ -caprolactone; cyclic acetals such as trioxane, 1,3-dioxolane, and 1,3,6-trioxane cyclooctane.
- Cyclic thioether compound such as tetrahydrothiophene derivative
- Spiro ortho ester compound obtained by reaction of the above-mentioned epoxy compound and lactone
- vinyl compounds such as ethylenically unsaturated compounds such as styrene, vinylcyclohexene, isobutylene and polybutadiene; oxolane compounds such as tetrahydrofuran and 2,3-dimethyltetrahydrofuran; thiirane compounds such as ethylene sulfide and thioepichlorohydrin; Examples include thietane compounds such as propyne sulfide and 3,3-dimethylthietane; and well-known compounds such as silicones.
- oxolane compounds such as tetrahydrofuran and 2,3-dimethyltetrahydrofuran
- thiirane compounds such as ethylene sulfide and thioepichlorohydrin
- Examples include thietane compounds such as propyne sulfide and 3,3-dimethylthietane; and well-known compounds such as silicones.
- a suitable solvent for example, propylene carbonate, carbitol, carbitol acetate, butyrolactone, propylene glycol-1-monomethyl ether
- a suitable solvent for example, propylene carbonate, carbitol, carbitol acetate, butyrolactone, propylene glycol-1-monomethyl ether
- -2-acetate etc. can be used.
- the cationically polymerizable composition of the present invention can be cured into a dry-to-touch state or a solvent-insoluble state usually after 0.1 seconds to several minutes by irradiation with energy rays such as ultraviolet rays.
- energy rays such as ultraviolet rays.
- Any suitable energy ray may be used as long as it induces decomposition of the cationic polymerization initiator, but preferably an ultra-high, high, medium, low-pressure mercury lamp, xenon lamp, carbon arc lamp, metal halide lamp, fluorescent lamp, 2,000 obtained from tungsten lamp, excimer lamp, germicidal lamp, excimer laser, nitrogen laser, argon ion laser, helium cadmium laser, helium neon laser, krypton ion laser, various semiconductor lasers, YAG laser, light emitting diode, CRT light source, etc.
- High energy rays such as electromagnetic wave energy having a wavelength of angstrom to 7,000 angstrom, electron
- the exposure time to energy rays depends on the strength of the energy rays, the coating thickness and the cationically polymerizable organic compound, but usually about 0.1 to 10 seconds is sufficient. However, it is preferable to take a longer irradiation time for a relatively thick coating. From 0.1 seconds to several minutes after irradiation with energy rays, most compositions are dry to the touch by cationic polymerization. However, in order to accelerate cationic polymerization, heat energy from heating or a thermal head may be used in combination. preferable.
- Specific applications of the resist composition and the cationic polymerizable composition of the present invention include optical filters, paints, coating agents, lining agents, adhesives, printing plates, insulating varnishes, insulating sheets, laminates, printed boards, and semiconductors. Sealant, molding material, putty, glass fiber impregnating agent, sealing agent for equipment, LED package, liquid crystal inlet, organic EL, optical element, electrical insulation, electronic parts, separation membrane, etc.
- Passivation films for semiconductors and solar cells interlayer insulating films used for thin film transistors (TFTs), liquid crystal display devices, organic EL display devices and printed boards, surface protective films, printed boards, color televisions, PC monitors, Portable information terminals, color filters for CCD image sensors, electrode materials for plasma display panels, printing inks, dental compositions, resin for stereolithography Both liquid and dry film, micro mechanical parts, glass fiber cable coating, holographic recording material, magnetic recording material, optical switch, plating mask, etching mask, screen printing stencil, touch panel such as transparent conductive film, MEMS element, Microlens arrays used in nanoimprint materials, photofabrication such as two-dimensional and three-dimensional high-density mounting of semiconductor packages, decorative sheets, artificial nails, glass replacement optical films, electronic paper, optical discs, lasers for projectors and optical communications
- a lens part of a lens sheet such as a prism lens sheet used for a backlight of a liquid crystal display device, a Fresnel lens sheet used for a screen of
- Example of preparation of negative resist composition A resin solution was prepared by dissolving 100 g of EPPN-201 manufactured by Nippon Kayaku Co., Ltd. in 100 g of methyl ethyl ketone. 1, compound no. 2, Compound No. 8 and compound no. 9 and the following comparative compound no. 1-No. 0.05 g of the compound of No. 3 was dissolved in 8.0 g of this resin solution to prepare negative resist compositions of Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-3.
- Each obtained negative resist composition was applied onto aluminum-coated paper with a # 3 bar coater. This was irradiated with light from an 80 W / cm high-pressure mercury lamp using a light irradiation device with a belt conveyor. The distance from the ramp to the belt conveyor was 10 cm, and the line speed of the belt conveyor was 8 m / min. After leaving at room temperature for 24 hours after curing, the coating film was rubbed with a cotton swab to which methyl ethyl ketone was attached. As a result, the coating film was not affected even after 200 reciprocations, and it was confirmed that the curing had progressed sufficiently.
- Example 2-1 to 2-4 and Comparative Examples 2-1 to 2-3 ⁇ Preparation Example of Cationic Polymerizable Composition> Compound 80 was prepared by mixing 80 g of 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexylcarboxylate and 20 g of 1,4-butanediol diglycidyl ether. 1, compound no. 2, Compound No. 8, compound no. 9 and comparative compound no. 1-No. 4 mmol of each of the compounds of No. 3 were added, and the mixture was well stirred and homogenized to prepare cationically polymerizable compositions of Examples 2-1 to 2-4 and Comparative Examples 2-1 to 2-3.
- Each obtained cationically polymerizable composition was applied onto aluminum-coated paper with a # 3 bar coater. This was irradiated with light from an 80 W / cm high-pressure mercury lamp using a light irradiation device with a belt conveyor. The distance from the ramp to the belt conveyor was 10 cm, and the line speed of the belt conveyor was 8 m / min. After leaving at room temperature for 24 hours after curing, the coating film was rubbed with a cotton swab to which methyl ethyl ketone was attached. As a result, the coating film was not affected even after 200 reciprocations, and it was confirmed that the curing had progressed sufficiently.
- a resin solution was prepared by dissolving 100 g of Nippon Kayaku Co., Ltd. EPPN-201 in 100 g of methyl ethyl ketone (MEK). 1, compound no. 2, Compound No. 8, compound no. 9 and comparative compound no. 1-No.
- MEK methyl ethyl ketone
- a resist solution was prepared by dissolving 0.05 g of the compound No. 3 in 8.00 g of this resin solution. This was coated on a copper substrate with a spin coater, dried at 90 ° C. for 90 seconds, and then exposed to light having a wavelength of 365 nm. The film was baked at 110 ° C. for 90 seconds, developed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 30 seconds, and washed with pure water.
- the aromatic sulfonium salt compound represented by the above general formula (I) has a Hammett acidity function (H 0 ) of acid species generated after photolysis of -17 or more, compared with the comparative compound. It can be seen that the strength of the acid generated is weak.
- the organic anion generates a weak acid (organic sulfonic acid having a Hammett acidity function (H 0 ) of ⁇ 17 or more). Is sufficiently small to generate an acid sufficiently, so that it has excellent photolithography characteristics and can be suitably used as a photoacid generator in a resist composition for photolithography.
- a weak acid organic sulfonic acid having a Hammett acidity function (H 0 ) of ⁇ 17 or more.
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Abstract
Description
(式(I)中、R1~R10は、それぞれ独立に、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、置換基を有してもよい炭素原子数1~18のアルキル基、置換基を有していてもよい炭素原子数6~20のアリール基、または置換基を有してもよい炭素原子数7~20のアリールアルキル基を表し、R1~R10で表される炭素原子数1~18のアルキル基、炭素原子数6~20のアリール基、および炭素原子数7~20のアリールアルキル基中のメチレン鎖は-O-、-S-、-CO-、-CO-O-、またはO-CO-で中断されていてもよく、R11~R15は、それぞれ独立に、水素原子、置換基を有してもよい炭素原子数1~18のアルコキシ基、置換基を有してもよい炭素原子数7~20のアリールアルコキシ基、置換基を有してもよい炭素原子数1~18のチオアルキル基、置換基を有してもよい炭素原子数7~20のアリールチオアルキル基、または-NRR’を表し、RおよびR’は、それぞれ独立に、水素原子、炭素原子数1~10のアルキル基、または炭素原子数6~12のアリール基を表し、R11~R15のうち1つ以上は水素原子でなく、X1 -は1価の有機スルホン酸陰イオンを表す。)で表されることを特徴とするものである。
(式(II)中、R1~R10およびX1 -は、上記一般式(I)と同じであり、Yは、炭素原子数1~18のアルキル基または炭素原子数7~20のアリールアルキル基である。)で表されることを特徴とするものである。
本発明の芳香族スルホニウム塩化合物は、下記一般式(I)、
(式(I)中、R1~R10は、それぞれ独立に、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、置換基を有してもよい炭素原子数1~18のアルキル基、置換基を有していてもよい炭素原子数6~20のアリール基、または置換基を有してもよい炭素原子数7~20のアリールアルキル基を表し、R1~R10で表される炭素原子数1~18のアルキル基、炭素原子数6~20のアリール基、および炭素原子数7~20のアリールアルキル基中のメチレン鎖は-O-、-S-、-CO-、-CO-O-、またはO-CO-で中断されていてもよく、R11~R15は、それぞれ独立に、水素原子、置換基を有してもよい炭素原子数1~18のアルコキシ基、置換基を有してもよい炭素原子数7~20のアリールアルコキシ基、置換基を有してもよい炭素原子数1~18のチオアルキル基、置換基を有してもよい炭素原子数7~20のアリールチオアルキル基、または-NRR’を表し、RおよびR’は、それぞれ独立に、水素原子、炭素原子数1~10のアルキル基、または炭素原子数6~12のアリール基を表し、R11~R15のうち1つ以上は水素原子でなく、X1 -は1価の有機スルホン酸陰イオンを表す。)で表される。
(式(II)中、R1~R10およびX1 -は、一般式(I)と同じであり、Yは、炭素原子数1~18のアルキル基または炭素原子数7~20のアリールアルキル基である。)で表される化合物が、溶媒への溶解性や樹脂との相溶性が高く現像性が高い光酸発生剤が得られるので好ましい。
のように表される。Hammett酸度関数(H0)の測定方法としては、種々の方法が知られており、例えば、アンモニア昇温脱理法(TPD法)あるいはハメットの指示薬を用いて「アドバンスィズ・イン・キャタラシス(ADVANCES IN CATALYSIS)」第37巻(VOLUME37)のp186-187に記載の方法に準じて求める方法が挙げられる。
本発明の光酸発生剤は、本発明の芳香族スルホニウム塩化合物からなるものである。本発明の光酸発生剤は、酸反応性有機物質、アクリル樹脂中のエステル基あるいはエーテル基等の化学結合の切断等に使用することができる。本発明の光酸発生剤を酸反応性有機物質に対して使用する場合、その使用量は、特に制限されるものではないが、酸反応性有機物質100質量部に対して、好ましくは0.01~100質量部、より好ましくは0.05~20質量部の割合で用いる。光酸発生剤の使用量が0.01質量部未満では、感度および現像性が低下する場合があり、一方、20質量部を越えると、放射線に対する透明性が低下して、矩形のレジストパターンを得られにくくなる場合がある。ただし、酸反応性有機物質の性質、光の照射強度、反応に要する時間、物性、コスト等の要因により、配合量を上述の範囲より増減させて用いることも可能である。
本発明のレジスト組成物は、酸の作用で現像液に対する溶解性が変化する樹脂(以下、「レジストベース樹脂」とも称する)と共に、本発明の芳香族スルホニウム塩化合物を必須の光酸発生剤として含有するレジスト組成物である。本発明のレジスト組成物は、特に、化学増幅型レジストとして有用である。化学増幅型レジストには、露光により光酸発生剤から発生した酸の作用によって、エステル基、あるいはアセタール基等の化学結合の切断等、レジストベース樹脂側鎖の脱保護反応で誘起される極性変化で現像液に可溶化させるポジ型レジストと、重合または架橋等化学的な連鎖反応を起こし、レジストベース樹脂の架橋反応や極性変化で現像液に不溶化させ、現像の際に未露光部分だけが選択的に除去されるネガ型レジストの2通りがある。本発明においては、レジストベース樹脂は1種または2種以上混合して用いる。
本発明のカチオン重合開始剤は、本発明の芳香族スルホニウム塩化合物からなるものである。その使用量は、特に制限されるものではないが、カチオン重合性化合物100質量部に対して、好ましくは0.01~100質量部、より好ましくは0.05~20質量部の割合で用いる。この場合、カチオン重合開始剤の使用量が0.01質量部未満では、感度が低下する場合があり、一方、20質量部を越えると、放射線に対する透明性が低下する場合がある。ただし、カチオン重合性化合物の性質、光の照射強度、反応に要する時間、物性、コスト等の要因により、配合量を上述の範囲より増減させて用いることも可能である。
本発明のカチオン重合性組成物は、本発明のカチオン重合開始剤と、カチオン重合性化合物とを含有する組成物である。ここで、カチオン重合性化合物は、光照射により活性化したカチオン重合開始剤により高分子化または架橋反応を起こす化合物を意味し、1種または2種以上混合して使用される。
<ネガ型レジスト組成物の調製例>
日本化薬(株)製EPPN-201の100gをメチルエチルケトン100gに溶解させ樹脂溶液を調製し、化合物No.1、化合物No.2、化合物No.8および化合物No.9並びに下記比較化合物No.1~No.3の化合物0.05gを、この樹脂溶液8.0gに溶解させ、実施例1-1~1-4および比較例1-1~1-3のネガ型レジスト組成物を調製した。
化合物No.1、化合物No.2、化合物No.8、化合物No.9および比較化合物No.1~No.3の化合物について、「アドバンスィズ・イン・キャタラシス(ADVANCES IN CATALYSIS)」第37巻(VOLUME37)のp186-187に記載の方法に準じて光分解後に発生する酸種のHammett酸度関数(H0)を測定した。結果を表1に示す。
<カチオン重合性組成物の調製例>
3,4-エポキシシクロヘキシルメチル-3,4-エポキシシクロヘキシルカルボキシレート80gおよび1,4-ブタンジオールジグリシジルエーテル20gを混合したものに、化合物No.1、化合物No.2、化合物No.8、化合物No.9および比較化合物No.1~No.3の化合物を、それぞれを4mmol添加し、よく撹拌し均一にし、実施例2-1~2-4および比較例2-1~2-3のカチオン重合性組成物を調製した。
化合物No.1、化合物No.2、化合物No.8、化合物No.9および比較化合物No.1~No.3の化合物を、それぞれについて、0.5質量%のアセトニトリル/水の混合溶液(アセトニトリル/水=9/1:容積比)を調製し、内径50mmのシャーレに5.0g入れ、HOYACANDEOOPTRONICS社製UVランプと365nm付近の波長のみを透過するカットフィルターを用いて100mW/cm2のUVを照射した。照射時間はそれぞれについて2秒、5秒、10秒の3点とした。露光後、45gのアセトニトリル/水の混合溶液(アセトニトリル/水=9/1:容積比)で希釈し、平沼産業(株)社製自動滴定装置(COM-1600)を用いて0.1mol/Lの水酸化カリウム水溶液で滴定を行い、用いた容量より酸濃度を測定し、これから発生率(mol%)を計算した。結果を表2に示す。
日本化薬(株)製EPPN-201の100gをメチルエチルケトン(MEK)100gに溶解させ樹脂溶液を調製し、化合物No.1、化合物No.2、化合物No.8、化合物No.9および比較化合物No.1~No.3の化合物0.05gを、この樹脂溶液8.00gに溶解させレジスト液を調製した。これを銅基板上にスピンコーターで塗布し、90℃で90秒間乾燥した後、波長365nmの光を照射して露光した。110℃で90秒間ベークし、2.38%のテトラメチルアンモニウムヒドロキシド水溶液に30秒間浸漬することにより現像し、純水で洗浄した。
原子間力顕微鏡(AFM)を用いて洗浄まで行った銅基板の表面(感光性樹脂組成物層の表面)の表面粗さ(Ra、単位nm)を測定した。数値が小さいほど表面が平滑なことを表す。評価は下記の基準で行った。結果を表3に示す。
○:Raが2.0nm以上7.0nm未満(実用範囲)
×:Raが7.0nm以上(実用不可)
-:評価せず
Claims (7)
- 下記一般式(I)、
(式(I)中、R1~R10は、それぞれ独立に、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、置換基を有してもよい炭素原子数1~18のアルキル基、置換基を有していてもよい炭素原子数6~20のアリール基、または置換基を有してもよい炭素原子数7~20のアリールアルキル基を表し、R1~R10で表される炭素原子数1~18のアルキル基、炭素原子数6~20のアリール基、および炭素原子数7~20のアリールアルキル基中のメチレン鎖は-O-、-S-、-CO-、-CO-O-、またはO-CO-で中断されていてもよく、R11~R15は、それぞれ独立に、水素原子、置換基を有してもよい炭素原子数1~18のアルコキシ基、置換基を有してもよい炭素原子数7~20のアリールアルコキシ基、置換基を有してもよい炭素原子数1~18のチオアルキル基、置換基を有してもよい炭素原子数7~20のアリールチオアルキル基、または-NRR’を表し、RおよびR’は、それぞれ独立に、水素原子、炭素原子数1~10のアルキル基、または炭素原子数6~12のアリール基を表し、R11~R15のうち1つ以上は水素原子でなく、X1 -は1価の有機スルホン酸陰イオンを表す。)で表されることを特徴とする芳香族スルホニウム塩化合物。 - 請求項1または2記載の芳香族スルホニウム塩化合物からなることを特徴とする光酸発生剤。
- 請求項3記載の光酸発生剤を含有してなることを特徴とするレジスト組成物。
- 前記レジスト組成物が、i線用ポジ型またはネガ型レジスト組成物である請求項4記載のレジスト組成物。
- 請求項1または2記載の芳香族スルホニウム塩化合物からなることを特徴とするカチオン重合開始剤。
- 請求項6記載のカチオン重合開始剤を含有してなることを特徴とするカチオン重合性組成物。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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EP15885452.1A EP3272744A4 (en) | 2015-03-18 | 2015-03-18 | Aromatic sulfonium salt compound, photoacid generator, resist composition, cationic polymerization initiator, and cationically polymerizable composition |
PCT/JP2015/058119 WO2016147356A1 (ja) | 2015-03-18 | 2015-03-18 | 芳香族スルホニウム塩化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 |
CN201580077938.6A CN107406403A (zh) | 2015-03-18 | 2015-03-18 | 芳香族锍盐化合物、光产酸剂、抗蚀剂组合物、阳离子聚合引发剂和阳离子聚合性组合物 |
US15/558,830 US10131646B2 (en) | 2015-03-18 | 2015-03-18 | Aromatic sulfonium salt compound, photoacid generator, resist composition, cationic polymerization initiator, and cationically polymerizable composition |
KR1020177029933A KR20170129230A (ko) | 2015-03-18 | 2015-03-18 | 방향족 술포늄염 화합물, 광산 발생제, 레지스트 조성물, 양이온 중합 개시제 및 양이온 중합성 조성물 |
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PCT/JP2015/058119 WO2016147356A1 (ja) | 2015-03-18 | 2015-03-18 | 芳香族スルホニウム塩化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 |
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US (1) | US10131646B2 (ja) |
EP (1) | EP3272744A4 (ja) |
KR (1) | KR20170129230A (ja) |
CN (1) | CN107406403A (ja) |
WO (1) | WO2016147356A1 (ja) |
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TWI744464B (zh) * | 2017-01-24 | 2021-11-01 | 日商信越化學工業股份有限公司 | 黏著劑之成形方法及藉此成形方法之防塵薄膜之製造方法及附黏著劑之防塵膜框之製造方法 |
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WO2011052327A1 (ja) * | 2009-10-26 | 2011-05-05 | 株式会社Adeka | 芳香族スルホニウム塩化合物 |
JP2011105645A (ja) * | 2009-11-17 | 2011-06-02 | Adeka Corp | 芳香族スルホニウム塩化合物 |
JP2013104985A (ja) * | 2011-11-11 | 2013-05-30 | Tokyo Ohka Kogyo Co Ltd | Euv用又はeb用レジスト組成物、及びレジストパターン形成方法 |
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JP4132709B2 (ja) | 2001-03-30 | 2008-08-13 | 東洋インキ製造株式会社 | 重合性組成物 |
CN100475803C (zh) | 2002-03-04 | 2009-04-08 | 和光纯药工业株式会社 | 含杂环鎓盐 |
JP2012248583A (ja) | 2011-05-25 | 2012-12-13 | Jjtech Co Ltd | 半導体装置の製造方法及び半導体装置、並びに中間板の製造方法 |
JP2013061642A (ja) * | 2011-08-22 | 2013-04-04 | Sumitomo Chemical Co Ltd | レジスト組成物及びレジストパターンの製造方法 |
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JP2015168617A (ja) * | 2014-03-04 | 2015-09-28 | 株式会社Adeka | 芳香族スルホニウム塩化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 |
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- 2015-03-18 CN CN201580077938.6A patent/CN107406403A/zh active Pending
- 2015-03-18 EP EP15885452.1A patent/EP3272744A4/en not_active Withdrawn
- 2015-03-18 US US15/558,830 patent/US10131646B2/en active Active
- 2015-03-18 KR KR1020177029933A patent/KR20170129230A/ko not_active Application Discontinuation
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JP2011105645A (ja) * | 2009-11-17 | 2011-06-02 | Adeka Corp | 芳香族スルホニウム塩化合物 |
JP2013104985A (ja) * | 2011-11-11 | 2013-05-30 | Tokyo Ohka Kogyo Co Ltd | Euv用又はeb用レジスト組成物、及びレジストパターン形成方法 |
JP2014094925A (ja) * | 2012-11-12 | 2014-05-22 | Adeka Corp | 芳香族スルホニウム塩化合物 |
JP2015004961A (ja) * | 2013-05-20 | 2015-01-08 | 富士フイルム株式会社 | パターン剥離方法、電子デバイス及びその製造方法 |
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TWI744464B (zh) * | 2017-01-24 | 2021-11-01 | 日商信越化學工業股份有限公司 | 黏著劑之成形方法及藉此成形方法之防塵薄膜之製造方法及附黏著劑之防塵膜框之製造方法 |
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Publication number | Publication date |
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CN107406403A (zh) | 2017-11-28 |
US10131646B2 (en) | 2018-11-20 |
US20180079738A1 (en) | 2018-03-22 |
KR20170129230A (ko) | 2017-11-24 |
EP3272744A1 (en) | 2018-01-24 |
EP3272744A4 (en) | 2018-07-25 |
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