WO2016129372A1 - Procédé de fabrication de cellule solaire, et cellule solaire - Google Patents

Procédé de fabrication de cellule solaire, et cellule solaire Download PDF

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Publication number
WO2016129372A1
WO2016129372A1 PCT/JP2016/052013 JP2016052013W WO2016129372A1 WO 2016129372 A1 WO2016129372 A1 WO 2016129372A1 JP 2016052013 W JP2016052013 W JP 2016052013W WO 2016129372 A1 WO2016129372 A1 WO 2016129372A1
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solar cell
heat treatment
manufacturing
oxide film
conductivity type
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PCT/JP2016/052013
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English (en)
Japanese (ja)
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慎也 西村
邦彦 西村
大介 新延
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三菱電機株式会社
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Priority to JP2016553619A priority Critical patent/JP6125114B2/ja
Priority to TW105103483A priority patent/TWI601297B/zh
Publication of WO2016129372A1 publication Critical patent/WO2016129372A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a solar cell manufacturing method and a solar cell, and more particularly to improvement of photoelectric conversion efficiency.
  • a diffusion source is formed using a CVD method as a method for diffusing impurities to a light receiving surface that is a light incident surface or a back surface that is opposite to the light receiving surface. Then, a method is disclosed in which the substrate and the film serving as the diffusion source are heated in a nitrogen atmosphere to diffuse the impurities into the substrate.
  • the present invention has been made in view of the above, and after forming a solid phase diffusion source, when impurities are diffused by heat treatment, impurities are prevented from being mixed into the back surface, so that a solar with a long carrier life can be obtained. It aims at obtaining the manufacturing method of a battery.
  • the present invention provides a process for forming a solid phase diffusion source on a first main surface of a first conductivity type semiconductor substrate having first and second main surfaces. And a heat treatment step of diffusing impurities of the second conductivity type from the solid phase diffusion source by heat treatment to form a diffusion layer of the second conductivity type.
  • the heat treatment step is performed in the same furnace, and the first step of heating while supplying oxygen at the first temperature, the supply of oxygen is stopped, the inert gas is supplied, and the second temperature is applied.
  • the present invention after the solid phase diffusion source is formed, when impurities are diffused by heat treatment, it is possible to prevent impurities from being mixed into the back surface and to improve the carrier life of the solar cell. .
  • FIG. 1 is a flowchart showing a method for manufacturing a solar cell according to a first embodiment.
  • (A) to (d) is a process cross-sectional view illustrating the method for manufacturing the solar cell according to the first embodiment.
  • (A) to (d) is a process cross-sectional view illustrating the method for manufacturing the solar cell according to the first embodiment.
  • Explanatory drawing which shows the time chart about the temperature in a furnace and environmental state of the heat treatment process in the manufacturing process of the solar cell concerning Embodiment 1.
  • FIG. (A) And (b) is a figure which shows the cross section of an n-type single crystal silicon substrate when the film-forming defect part arises partially at the time of formation of a BSG film and a silicon oxide film in the method of Embodiment 1.
  • FIG. 1 A flowchart which shows the manufacturing method of the solar cell concerning Embodiment 2.
  • FIG. A flowchart showing a method of manufacturing a solar cell according to the third embodiment.
  • (A) And (b) is a figure which shows the n type diffused layer formation process of the back surface of the manufacturing method of the solar cell concerning Embodiment 3.
  • FIG. (A) And (b) is a figure which shows the n type diffused layer formation process of the back surface of the manufacturing method of the solar cell concerning the modification of Embodiment 3.
  • FIG. (A) And (b) is a figure which shows the n type diffused layer formation process of the back surface of the manufacturing method of the solar cell concerning Embodiment 4.
  • FIG. 1 The graph showing the average sheet resistance of the solar cell substrate back surface at the time of changing the oxygen flow rate at the time of heat processing in the manufacturing method of the solar cell concerning Embodiment 1.
  • FIG. 5 Explanatory drawing which shows the time chart about the temperature in a furnace, and an environmental state in the manufacturing method of the solar cell of Embodiment 5.
  • FIG. Flow chart of manufacturing process of solar cell of embodiment 6 Sectional drawing of the principal part of the solar cell in the manufacturing process of the solar cell of Embodiment 6
  • the flowchart which shows the principal part of the manufacturing process of the solar cell of Embodiment 7.
  • (A) And (b) is principal part sectional drawing of the solar cell in the manufacturing process of the solar cell of Embodiment 7.
  • FIG. FIG. 1 is a flowchart of a manufacturing process showing Embodiment 1 of a method for manufacturing a solar cell according to the present invention
  • FIGS. 2 (a) to (d) and FIGS. 3 (a) to (d) are embodiments.
  • 1 is a process cross-sectional view illustrating a method for manufacturing a solar cell according to FIG. 2 (a) to 2 (d) are cross-sectional views showing changes in the solar cell substrate in a continuous process in the furnace shown in FIG. 1 in the method for manufacturing a solar cell according to the present invention.
  • FIGS. 3A to 3D are schematic views showing changes in the cross section of the solar cell in the process following the heat treatment shown in FIG. 2 during the manufacturing process of the first embodiment.
  • FIG. 4 is an explanatory diagram showing a time chart regarding the temperature in the furnace and the environmental state.
  • the heat treatment step for forming the diffusion layer in the heat treatment step for forming the diffusion layer, the heat treatment step is performed in the same furnace prior to the diffusion of the impurities, and oxygen is supplied at the first temperature.
  • the oxide film is formed by heating while performing the impurity diffusion at the second temperature and then oxidizing again at the third temperature.
  • heating is performed at a first temperature while supplying oxygen.
  • the supply of oxygen is stopped, an inert gas is supplied, and the impurities are diffused by heating at the second temperature.
  • heating is performed at a third temperature while supplying oxygen again, so that the oxide film becomes a dense oxide film, and the barrier property is improved.
  • the first step of heating the semiconductor substrate in the atmosphere containing oxygen is performed prior to the second step of performing impurity diffusion by the heating step in an atmosphere not containing oxygen.
  • An oxide film is formed on the surface of the semiconductor substrate opposite to the surface on which the solid phase diffusion source is formed.
  • the solid phase diffusion source is formed on the surface opposite to the film formation surface, the solid phase diffusion material wraps around and adheres to it, but since the oxide film is formed, the impurities from the adhering matter are diffused into the substrate. There is nothing. Therefore, there is an effect that the film formation process and the heat treatment of the solid phase diffusion source can be continuously performed.
  • the solar cell according to the first embodiment uses an n-type single crystal silicon substrate 1 as a first conductivity type semiconductor substrate having a first main surface serving as a light receiving surface 1A and a second main surface serving as a back surface 1B. .
  • the manufacturing method will be described with reference to FIGS. 1, 2A to 2D, FIGS. 3A to 3D, and FIG.
  • step S101 contamination or damage caused during wafer slicing on the surface is removed by immersing in, for example, an alkaline solution in which 1 wt% or more and less than 10 wt% sodium hydroxide is dissolved, and then an n-type single crystal silicon substrate.
  • an uneven surface for obtaining an antireflection structure by adding an additive such as isopropyl alcohol or caprylic acid in an alkaline solution of 0.1% or more and less than 10% to 1 light receiving surface 1A.
  • an additive such as isopropyl alcohol or caprylic acid in an alkaline solution of 0.1% or more and less than 10% to 1 light receiving surface 1A.
  • the removal of slice contamination and damage and the formation of texture may be performed simultaneously or individually.
  • the texture may be formed not only on the light receiving surface but also on the back surface. 2 and 3, the texture is not shown for easy understanding, and both the light receiving surface and the back surface are shown as flat surfaces.
  • step S102 the surface of the n-type single crystal silicon substrate 1 is cleaned.
  • a mixed solution of sulfuric acid and hydrogen peroxide, a hydrofluoric acid aqueous solution, a mixed solution of ammonia and hydrogen peroxide, and a mixed solution of hydrochloric acid and hydrogen peroxide, called RCA cleaning are used.
  • a step of removing the combined organic material, metal, and oxide film is used.
  • an oxide film removing process using only a hydrofluoric acid aqueous solution may be used.
  • a boron silicate glass that is, a BSG film 2, which is an oxide film containing boron, for example, a solid phase diffusion source, is formed on the light receiving surface 1A of the n-type single crystal silicon substrate 1.
  • a BSG film 2 which is an oxide film containing boron, for example, a solid phase diffusion source
  • a boron silicate glass for example, a BSG film 2
  • low pressure CVD Chemical Vapor Deposition
  • atmospheric pressure CVD is used.
  • the deposit 4 containing boron which is a product produced by the deposition gas flowing around, adheres to the back surface 1B of the n-type single crystal silicon substrate 1.
  • a film that becomes a cap at the time of heat treatment for example, a silicon oxide film 3 is formed on the BSG film 2.
  • the silicon oxide film 3 is preferably formed by a film forming process such as low pressure CVD or atmospheric pressure CVD like the BSG film 2 from the viewpoint of process continuity.
  • the deposit 5 containing silicon oxide which is a product generated by the deposition gas flowing around, adheres to the back surface 1B as in the case of forming the BSG film 2.
  • the n-type single crystal silicon substrate 1 is continuously subjected to heat treatment.
  • a heat treatment furnace is used for the heat treatment.
  • the surface of the n-type single crystal silicon substrate 1 put in the heat treatment furnace is oxidized by oxygen contained in the atmosphere.
  • the oxidation proceeds selectively on the back surface side not covered with the film because the light receiving surface side is covered with the BSG film 2 and the silicon oxide film 3.
  • the deposit 4 containing boron and the deposit 5 of silicon oxide adhering to the back side are not formed as a film, but are adhered as particulate deposits. Therefore, oxygen easily reaches the interface between the deposit on the back surface side and the n-type single crystal silicon substrate 1, and the deposit 4 containing boron and the deposit 5 of silicon oxide, the n-type single crystal silicon substrate 1, A silicon oxide film 6 is formed at the interface.
  • the oxygen supply begins at time t 21, at time t 22, to stop the oxygen supply.
  • the third temperature T 3 is set to the same temperature as the second temperature T 2 , oxygen is supplied from time t 21 to time t 22 , and a dense silicon oxide film 8 is generated as shown in FIG. To do. After the impurity diffusion is thus completed, oxygen is allowed to flow again, whereby silicon oxide film 8 is formed on the entire surface of n-type single crystal silicon substrate 1.
  • step S108 in which the back surface diffusion is performed in the POCl 3 atmosphere, phosphorus in the phosphorus diffusion POCl 3 gas is quickly diffused to the exposed back surface 1B, and the light receiving surface 1A side where the p-type diffusion layer 7 is formed serves as a diffusion barrier. Since the silicon oxide film 8, the BSG film 2, and the silicon oxide film 3 are formed, mixing of phosphorus is prevented.
  • phosphorus is diffused selectively on the back surface 1B, and the n-type diffusion layer 14 is formed on the back surface 1B.
  • the n-type diffusion layer 14 After the formation of the n-type diffusion layer 14, the BSG film 2, the silicon oxide film 3, and the silicon oxide film 8 functioning as a barrier are removed using, for example, 5 to 25% hydrofluoric acid aqueous solution. Subsequently, in the pn junction separation step S109, the substrate end face is cut or etched to separate the p-type diffusion layer 7 and the n-type diffusion layer 14, and as shown in FIG. A solar cell substrate provided with a p-type diffusion layer 7 and an n-type diffusion layer 14 on the back surface 1B side is formed.
  • the light receiving surface antireflection film 15a and the back surface antireflection film 15b are formed on the light receiving surface 1A and the back surface 1B, respectively, for example, using plasma CVD.
  • a passivation film such as a silicon oxide film or alumina may be formed on the p-type diffusion layer 7 and a passivation film such as a silicon oxide film may be formed on the n-type diffusion layer 14 on each of the light receiving surface 1A and the back surface 1B.
  • a passivation film such as a silicon oxide film or alumina may be formed on the p-type diffusion layer 7 and a passivation film such as a silicon oxide film may be formed on the n-type diffusion layer 14 on each of the light receiving surface 1A and the back surface 1B.
  • the light receiving surface electrode 16a and the back surface electrode 16b are formed on the light receiving surface 1A side and the back surface 1B side, respectively.
  • the electrode material for example, copper, silver, aluminum, or a mixture thereof is used.
  • a light-receiving surface antireflection film 15a and a back surface are formed on the light-receiving surface 1A and the back surface 1B through a baking process.
  • a light receiving surface electrode 16a and a back surface electrode 16b are formed respectively penetrating the antireflection film 15b. In this way, the solar cell is completed.
  • the temperature is raised, heated, and cooled while the temperature and atmosphere are switched.
  • the heat treatment furnace is preheated to the oxidation temperature T 1 .
  • the deposition atmosphere of the silicon oxide film 6 on the back surface 1B side is the first temperature after the n-type single crystal silicon substrate 1 in which the solid phase diffusion source 2 is formed on the light receiving surface 1A side is put in a heat treatment furnace.
  • oxygen is supplied and maintained for a certain time t 0 , and the first oxidation process is performed.
  • the oxidation temperature T 1 is 800 ° C., but the oxidation temperature T 1 is in the temperature range from 500 ° C. to 950 ° C., and the time t 0 is about 1 minute to 20 minutes.
  • the oxidation temperature T 1 is preferably 700 ° C. to 850 ° C. If the oxidation temperature T 1 is less than 700 ° C., the oxidation rate is slow. If the oxidation temperature T 1 exceeds 850 ° C., diffusion proceeds before the back surface is sufficiently covered with the oxide film, and formation of deposits on the back surface is inevitable. Sometimes.
  • the silicon oxide film 6 covering the back surface 1B can be formed stably and reliably.
  • the surface of the n-type single crystal silicon substrate 1 put in the heat treatment furnace is oxidized by oxygen contained in the atmosphere. Since the light receiving surface 1A side is covered with the BSG film 2 and the silicon oxide film 3 that are solid phase diffusion sources, the oxidation selectively proceeds on the back surface 1B side that is not covered with the film.
  • the deposit 4 containing boron and the deposit 5 of silicon oxide adhering to the back surface 1B side are not formed as films but are adhered as particulate deposits. For this reason, oxygen easily reaches the interface between the deposit on the back surface 1B side and the n-type single crystal silicon substrate 1, and the deposit 4 containing boron, the deposit 5 of silicon oxide, and the n-type single crystal silicon substrate 1 A silicon oxide film 6 is formed at the interface.
  • oxygen is supplied into the heat treatment furnace before the impurity diffusion from the solid phase diffusion source 2 occurs, and the silicon oxide film 6 for preventing unintentional impurity diffusion into the back surface 1B is formed.
  • the process of carrying out is included.
  • a gas mixed with oxygen may be flowed from when the wafer is charged.
  • the time for replacing the inside of the furnace with nitrogen can be omitted, and the process can be shortened.
  • non-uniformity of oxidation treatment due to gas mixed at the time of wafer loading or temperature distribution in the furnace There is.
  • the temperature may be raised after the oxygen supply is started, and may be performed in the step of raising the temperature to the second temperature T 2 that is the diffusion temperature.
  • a time chart is shown by a broken line b in FIG. In this case, the process can be shortened, but diffusion starts in the state where the back surface 1B is not completely covered with the silicon oxide film 6 during the oxidation process.
  • the temperature is raised to the diffusion temperature T 2 that is the second temperature, heated in an atmosphere containing an inert gas such as nitrogen or argon, and maintained for a certain time t 1 , and the diffusion step that is the second step is performed. carry out.
  • the diffusion temperature T 2 is 1050 ° C., but the diffusion temperature T 2 is in the temperature range of 800 ° C. to 1100 ° C., and the time t 1 is about 1 minute to 120 minutes.
  • the inflow of oxygen is stopped, and a temperature at which impurity diffusion from the BSG film 2 proceeds, for example, 900 ° C. to 1100 ° C. is reached.
  • the inflow of oxygen is stopped until the formation of the desired p-type diffusion layer 7 is completed.
  • the second temperature T 2 at this time is determined by the type of impurities.
  • the third temperature T 3 may be higher than the second temperature T 2 . Thereby, the dense silicon oxide film 8 is efficiently formed in a short time.
  • the third temperature T 3 is maintained for a certain time t 2, but the third temperature T 3 may be the second temperature T 2 that is the diffusion temperature.
  • heating may be stopped and oxidation may be performed in the temperature lowering process. This is in a state where the temperature began to decrease in oxygen supply at t 21 as indicated by the broken line in the right side of FIG. 4. In this case, the heating time can be further shortened. Since the third temperature T 3 is the same as the second temperature T 2 , the third temperature T 3 is not shown in FIG.
  • FIG. 5A and FIG. 5B show cross-sectional views of the n-type single crystal silicon substrate 1 when a defective film formation portion partially occurs during the formation of the BSG film 2 and the silicon oxide film 3.
  • FIG. 3 is a diagram corresponding to FIG. 2B and FIG. 2D in the manufacturing process described above, respectively.
  • the defective film formation portion 9 is divided into a silicon oxide film formation failure portion 9a, a BSG formation failure portion 9b, and a formation failure portion 9c of both the BSG film and the silicon oxide film.
  • the defective film formation portion 9 forms the p-type diffusion layer defective portion 10 including the p-type diffusion layer shallow portions 10a and 10b and the p-type diffusion layer non-formed portion 10c.
  • the oxidation treatment is performed in an atmosphere containing oxygen before the impurity diffusion step, a portion of the film formation failure portion 9 where the film is thinned so that impurity diffusion is not performed, for example, a BSG film and silicon oxide Oxygen reaches the light-receiving surface 1A of the n-type single crystal silicon substrate 1 immediately below the formation failure portion 9c of both films, and a silicon oxide film 11 is formed in the same manner as the back surface 1B. Since the silicon oxide film 11 functions as a barrier that prevents entry of contaminants from the furnace body or atmosphere, contamination of the light receiving surface 1A during heat treatment is prevented.
  • an oxide film is formed on a defective film formation portion 9 or a portion where the film is not formed, for example, the back surface 1B, so that the entry of contaminants can be prevented.
  • the silicon oxide film 8 is formed in the portion where the impurity diffusion is performed by introducing oxygen after the impurity diffusion is performed.
  • the atmosphere containing oxygen is a mixture of oxygen and an inert gas typified by nitrogen or argon at a flow rate ratio of 10% to 100%.
  • oxygen is 10% or less, the oxidation rate on the surface of the n-type single crystal silicon substrate 1 is slow, so that it is difficult to obtain the effect. Unevenness of the oxide film on the surface can occur, which is not preferable.
  • oxygen may be 100%, the oxidation rate is limited by the diffusion of oxygen into the n-type single crystal silicon substrate 1, and the oxidation rate increases as the oxygen flow rate ratio increases. It is necessary to limit the time to a short time. For this reason, it is preferable to heat in an atmosphere containing oxygen from a margin of 15% to avoid oxygen distribution unevenness in the furnace, for example, 40%.
  • FIG. 11 shows an average value of the sheet resistance of the back surface 1B of the n-type single crystal silicon substrate 1 after the above treatment is performed at a flow rate ratio of 10% oxygen and 20% oxygen with respect to nitrogen. .
  • an increase in sheet resistance is suppressed, which is equivalent to a value of around 90 ⁇ / ⁇ , which is the sheet resistance of the n-type single crystal silicon substrate itself used in the test.
  • the magnitude of the suppression effect is affected by the thickness or density of the silicon oxide film 6 formed on the back surface 1B side.
  • the amount of boron diffused on the back surface 1B of the n-type single crystal silicon substrate 1 is suppressed to 1.6 ⁇ 10 17 / cm 3 or less when averaged over the entire back surface, thereby improving the photoelectric conversion efficiency. The decrease can be suppressed to such an extent that it can be ignored.
  • Boron is an impurity that is supplied to the light receiving surface 1A, which is the second main surface of the n-type single crystal silicon substrate 1, as an impurity of the second conductivity type.
  • the slice damage removing step, the texture forming step, and the cleaning step are examples used for explaining the method of manufacturing the solar cell of the first embodiment, and are not limited to these. Any process may be used and is not intended to limit the present invention.
  • the formation process of the n-type diffusion layer 14 on the back surface 1B, the separation process of the pn junction, the formation process of the light receiving surface antireflection film 15a and the back surface antireflection film 15b, and the formation of the light receiving surface electrode 16a and the back surface electrode 16b Since the process is not directly related to the present invention, any process may be used and does not limit the present invention.
  • the order from the formation process of the n-type diffusion layer 14 to the formation process of the electrode 16 may be appropriately changed as long as it functions as a solar cell, and the order of description does not limit the present invention.
  • the n-type single crystal silicon substrate 1, the BSG film 2 as the solid phase diffusion source, and the phosphorus diffusion layer 14 as the back surface 1B are used.
  • the present invention is not limited to this.
  • another silicon-based crystal substrate such as a polycrystalline silicon substrate or silicon carbide may be used as the substrate, and a p-type substrate may be used as the conductive type.
  • the solid phase diffusion source may be one containing impurities that form an n-type diffusion layer such as phosphorus silicate glass (PSG).
  • PSG phosphorus silicate glass
  • an impurity forming a p-type diffusion layer such as boron may be used.
  • the silicon oxide film is formed on the back surface 1B before the impurity diffusion even when the heat treatment is performed continuously to the formation of the BSG film 2 and the silicon oxide film 3 of the solid phase diffusion source. 6 is formed, it is possible to prevent the diffusion of impurities from the deposit 4 containing boron, which is a product that wraps around the back surface 1B, to the back surface 1B.
  • the silicon oxide film 11 is formed in the portion where the impurity diffusion is not performed even if the film formation failure portion 9 is present on the light receiving surface 1A side where the BSG film 2 and the silicon oxide film 3 are formed, contamination is caused. Intrusion of material is prevented.
  • a silicon oxide film 8 is formed on the light receiving surface 1A as a barrier for impurity diffusion to be performed subsequently. Therefore, it is possible to prevent the light-receiving surface 1A and the back surface 1B from being mixed with impurities other than the target impurity, or impurities that form the opposite conductivity type, or contaminated substances, and have a long carrier life and high photoelectric conversion efficiency. Is realized.
  • the deposit 4 containing boron on the back surface 1B needs to be removed using, for example, an aqueous hydrofluoric acid solution or its vapor. No. That is, since the deposit 4 including boron on the back surface 1B side is not required to be removed, the silicon oxide film 3 or the BSG film 2 on the light receiving surface 1A side is not thinned.
  • the region within 5 mm from the outside of the end of the n-type single crystal silicon substrate 1 is a region where the thinning due to the removal process occurs greatly.
  • the removal process step for removing the deposit on the back surface 1B is performed. Since it is unnecessary, the silicon oxide film 3 or the BSG film 2 is not thinned.
  • the film thickness of the silicon oxide film 3 or the BSG film 2 is uniform also in the end region within 5 mm from the outside of the end of the n-type single crystal silicon substrate 1. For this reason, it is possible to suppress the impurity concentration at the end of the n-type single crystal silicon substrate 1 from decreasing nonlinearly as it approaches the end from the impurity concentration of the adjacent n-type single crystal silicon substrate 1 region.
  • SIMS analysis Single Ion Mass Spectrometry
  • the silicon oxide film 11 is not formed, and the portion where oxygen reaches the interface of the n-type single crystal silicon substrate 1 in the poorly formed portion of the BSG film 2 and the silicon oxide film 3 is formed by the silicon oxide film 11. Therefore, the formation of a current leak path caused by the adjacent p-type diffusion layer 7 and n-type diffusion layer 14 is prevented. Since the leak path is not formed, the solar cell manufactured using the solar cell manufacturing method of Embodiment 1 has a good diode characteristic and a solar cell exhibiting high photoelectric conversion efficiency.
  • the heat treatment step of diffusing the second conductivity type impurity from the solid phase diffusion source to form the second conductivity type diffusion layer is performed at the first temperature while supplying oxygen.
  • the solid phase diffusion source since the process of removing the deposits on the back surface is unnecessary, the solid phase diffusion source does not become thin. Therefore, a uniform diffusion layer can be formed over the entire surface of the solar cell substrate. Furthermore, since the oxide film formed during the heat treatment is also formed in the film formation failure portion of the solid phase diffusion source, it is possible to prevent the entry of contaminants into the film formation failure portion.
  • the impurity concentration in the diffusion layer at the end portion of 5 mm of the solar cell substrate where the impurity diffusion from the solid phase diffusion source and the impurity concentration in the diffusion layer of the adjacent solar cell substrate change only linearly. For this reason, since a uniform diffusion layer is formed over the entire surface of the solar cell substrate, a solar cell with a long carrier life is realized.
  • the contamination of impurities on the back surface of the solar cell substrate that has been subjected to impurity diffusion from the solid phase diffusion source is 1.6 ⁇ 10 17 / cm 3 or less on the entire back surface, contamination of impurities on the back surface Is suppressed below the amount that affects the semiconductor substrate. Therefore, a solar cell having a long carrier life and excellent photoelectric conversion efficiency is realized.
  • the amount of impurities can be determined by performing the above SIMS analysis on the back surface of the solar cell substrate and averaging it using the area of the solar cell substrate.
  • the heat treatment process consisting of three steps
  • chemical treatment is performed to remove deposits on the back surface.
  • the solid phase diffusion source or silicon oxide film that has undergone heat treatment changes to a film that is more resistant to chemicals than immediately after deposition, so the film thickness can be reduced due to chemical treatment, and the deposits on the back surface can be removed.
  • impurity diffusion can be performed, and a uniform diffusion layer can be formed on the back surface.
  • Embodiment 2 The solar cell manufacturing method according to the second embodiment is the same as the solar cell manufacturing method shown in the first embodiment except for the formation of the solid phase diffusion source and the heat treatment step that is continuously performed. Details will be omitted with reference to the first embodiment.
  • FIG. 6 is a flowchart showing a main part of the method for manufacturing the solar cell according to the second embodiment.
  • the substrate cleaning step S102S for cleaning the substrate between the film forming step S103 on the light receiving surface side of the solid phase diffusion source, the step S104, the step S105, and the step S106 is performed.
  • the heat treatment process is a three-step process including a first process that is an oxidation process, a second process that is a diffusion process, and a third process that is an oxidation process.
  • the first step is step S104 in which heat treatment is performed in an atmosphere containing oxygen
  • the second step is step S105 in which heat treatment is performed in an inert gas atmosphere
  • the third step is step S106 in which heat treatment is performed in an atmosphere containing oxygen.
  • the substrate cleaning process step S102S is inserted between the solid-phase diffusion source film forming step S103 of the flowchart shown in the first embodiment and the heat treatment process performed continuously.
  • the BSG film 2 which is a solid phase diffusion source is formed, for example, ultrasonic water washing or a cleaning process that does not attack the BSG film 2 or the silicon oxide film 3 is inserted.
  • the effect described in Form 1 is not negated.
  • the first step to be carried out that is, the heating in the oxygen atmosphere in the initial stage of the heat treatment, the thinned region or the peeled portion of the BSG film 2 or the silicon oxide film 3 is subjected to FIGS. 5A and 5B.
  • a silicon oxide film is formed by heat, so that intrusion of contaminants from the furnace body of the heat treatment furnace can be prevented.
  • the time t 0 of the first oxidation step that is, the oxygen introduction step performed after the n-type single crystal silicon substrate 1 is put in the heat treatment furnace can be shortened, and the number of treatments per unit time can be increased. Can do.
  • the impurity distribution in the end portion of the n-type single crystal silicon substrate 1 or the substrate surface is uneven, while the silicon oxide film 11 due to heat is formed on the portion. Since the film is formed, there is no intrusion of contaminants from the furnace body of the heat treatment furnace, a solar cell having a long carrier life can be realized, and at the same time, the number of production per unit time can be improved.
  • the heat treatment step is performed through the step of cleaning the semiconductor substrate after the step of forming the solid phase diffusion source.
  • Embodiment 3 The solar cell manufacturing method according to the third embodiment is the same as the solar cell manufacturing method described in the first or second embodiment except for the oxide film removal step on the back surface side and the phosphorus diffusion step. Details will be omitted by referring to the first embodiment or the second embodiment.
  • FIG. 7 is a flowchart showing the process from the heat treatment to the pn junction separation step in the method for manufacturing the solar cell according to the third embodiment.
  • FIGS. 8A and 8B are schematic diagrams showing changes in the cross section of the n-type single crystal silicon substrate 1 during the n-type impurity diffusion step.
  • steps S104, 105, and 106 which are heat treatment steps for forming the p-type diffusion layer 7, as shown in FIG.
  • a film forming step S108a on the back surface side of the solid phase diffusion source and a back surface diffusion step S108b which is a heat treatment step are performed.
  • a diffusion source 17 containing an n-type conductivity impurity at a high concentration, for example, 1 ⁇ 10 20 / cm 3 or more of phosphorus is formed on the silicon oxide film 6 on the back surface 1B.
  • the n-type single crystal silicon substrate 1 is subjected to heat treatment in the back surface diffusion step S108b. Impurity diffusion from the diffusion source 17 is performed at a temperature of 800 ° C. to 1000 ° C., for example.
  • the silicon oxide film 6 formed on the back surface 1B exists immediately below the diffusion source, the n-type single crystal silicon substrate 1 that is in contact with the diffusion source 17 because the impurity concentration of the diffusion source 17 is high.
  • Impurities are diffused into the n-type diffusion layer 18. Then, after the pn junction separation step S109, the antireflection film formation step S110 and the electrode formation step S111 shown in FIG. 1 are performed.
  • the removal of the solid phase diffusion source is preferably performed between steps S108b and S109 or after S109.
  • a hydrofluoric acid aqueous solution is used to remove the solid phase diffusion source.
  • the n-type single crystal silicon substrate 1 in a region other than immediately below the diffusion source 17 is attached with impurities desorbed from the diffusion source 17 into the atmosphere, but the concentration is lower than the impurity concentration of the diffusion source 17 itself, and the n-type It cannot pass through the oxide film formed on the surface of the single crystal silicon substrate 1.
  • FIGS. 9A and 9B show a modification of the formation shape of the diffusion source 17.
  • the diffusion source 19 shown in FIG. 9A is patterned in an arbitrary region by, for example, a photolithography process using a photoresist after film formation or a printing process.
  • An n-type diffusion layer 20 is formed immediately below the diffusion source 19 formed at an arbitrary position.
  • the n-type diffusion layer 20 is formed in the same shape as the position of the back surface electrode formed in the subsequent process, such as a pattern shape similar to the comb-shaped electrode, a shape in which straight line patterns are arranged, or a dot shape in which dots are scattered. .
  • the step of forming the solid phase diffusion source is a step of selectively forming the diffusion source 19 on the back surface 1B which is the second main surface. This is a step of forming the n-type diffusion layer 20 of the first conductivity type by diffusion from the solid phase diffusion source, that is, the PSG film which is the diffusion source 19.
  • the oxide film removal step on back surface 1B can be removed from the manufacturing method, and silicon oxide films 6, 8, formed on n-type single crystal silicon substrate 1, 11 can be completed without affecting the n-type impurity diffusion process.
  • impurities of 1 ⁇ 10 20 / cm 3 or more are applied to the back surface 1B which is the second main surface of the n-type single crystal silicon substrate 1. It forms a diffusion source containing.
  • an impurity diffusion layer can be formed even if a silicon oxide film is present at a portion in contact with the diffusion source, and the silicon oxide film 6 on the back surface 1B of the n-type single crystal silicon substrate 1 is removed. The process can be omitted.
  • the step of removing the oxide film on the back surface is not necessary, so that the formation of a leak path in which p-type and n-type impurities are adjacent to each other is prevented.
  • a solar cell with excellent characteristics is realized.
  • Embodiment 4 Since the manufacturing method of the solar cell according to the fourth embodiment is the same as the manufacturing method of the solar cell shown in the first to third embodiments except for the back side oxide film removal step and the phosphorus diffusion step, Details will be omitted by referring to the first to third embodiments.
  • FIGS. 10A and 10B are schematic diagrams showing changes in the cross section of the solar cell during the step of forming the n-type diffusion layer on the back surface in the method for manufacturing the solar cell according to the fourth embodiment.
  • the manufacturing method of the solar cell according to the fourth embodiment is the same up to step S106 of the first embodiment, that is, the three-step heat treatment process.
  • the membrane is selectively removed.
  • a method of selectively removing for example, a method of removing using an etching paste or a method of removing using a laser can be used.
  • an opening 21 is formed in the silicon oxide film 6, and there are a portion where the n-type single crystal silicon substrate 1 is exposed and a portion covered with the silicon oxide film 6. Since impurities easily enter the exposed portion, the n-type diffusion layer 22 is selectively formed by using, for example, a simple POCl 3 gas.
  • the n-type diffusion layer can be formed without using the local diffusion step by selectively removing the oxide film at the location where the n-type diffusion layer on the back surface is formed. It can be formed at any position.
  • the oxide film since the oxide film is locally removed, the silicon oxide film in other regions is not thinned, impurity diffusion to other regions is prevented, leakage path formation is prevented, and diode characteristics An excellent solar cell is realized.
  • the fourth embodiment after the heat treatment step, a part of the silicon oxide film as a protective film in the step of forming a conductive type diffusion layer different from the formed diffusion layer is removed. Accordingly, it becomes possible to use impurity diffusion by a simple gas, and since the film remains except for the oxide film removal portion, it is possible to prevent impurities from entering and leak paths from being formed.
  • FIG. 5 The method for manufacturing a solar cell according to the fifth embodiment is characterized in that the inflow ratio of oxygen in the heat treatment step is changed and the heat treatment environment is sequentially changed.
  • the solar cell manufacturing method according to the fifth embodiment is different from the solar cell manufacturing method shown in the first and second embodiments in that step S104S in which heat treatment is performed in an atmosphere containing O 2 is the same as in the first embodiment. Unlike the other steps except that the oxygen inflow ratio is changed, the detailed description will be omitted as referring to the first to second embodiments.
  • FIG. 12 is a flowchart of the manufacturing process of the solar cell of the fifth embodiment.
  • FIG. 13 is an explanatory diagram showing a time chart for the temperature in the furnace and the environmental state in the method for manufacturing the solar cell of the fifth embodiment.
  • step S104S as shown in FIG. 13, to vary the flow rate to the total gas of oxygen during the period from t 02 to t 11.
  • the vertical axis represents the oxygen gas flow rate ratio
  • the horizontal axis represents the elapsed time.
  • t 02 to t 021 , t 024 to t 025 , and t 028 to t 11 are timings at which oxidation of the back surface 1B proceeds.
  • From t 022 to t 023 and from t 026 to t 027 in FIG. 13 are timings for reducing oxygen and removing oxygen entering the BSG film 2 and the silicon oxide film 3.
  • oxygen entering the BSG film 2 and the silicon oxide film 3 is removed at the oxidation timing as described above. It is possible to prevent oxygen from reaching the light receiving surface 1A of the n-type single crystal silicon substrate 1.
  • the back surface 1B is open or only a rough back surface deposit exists, it quickly comes into contact with oxygen when oxygen is added and is quickly oxidized.
  • the silicon oxide film 6 on the back surface 1B can be selectively formed thick by switching the oxygen concentration a plurality of times.
  • step S104S of FIG. 12 an oxidation process of an oxidation time tA in which the oxygen concentration is increased to promote backside oxidation, and the oxygen concentration is lowered to enter the BSG film 2 and the silicon oxide film 3 on the light receiving surface side.
  • An osmosis return step with an osmosis return time tB for removing oxygen that is being removed and returning it to the furnace is performed alternately.
  • the first oxidation step, the first permeation return step, the second oxidation step, and the second permeation return step are sequentially performed.
  • the oxidation time tA and the permeation return time tB vary depending on the oxidation environment, it is desirable that the oxidation time tA per time is generally within 1 minute, and the permeation return time tB per time is about 1 to 2 minutes. Further, the permeation return time tB may be shorter as the temperature is lower.
  • the oxide film thickness of the back surface 1B can be increased without forming an oxide film on the light receiving surface 1A, and the diffusion suppressing effect of the silicon oxide film 6 is increased.
  • a solar cell having a long carrier life and high photoelectric conversion efficiency is realized.
  • FIG. 6 The method for manufacturing a solar cell according to the sixth embodiment is characterized by oxygen inflow and a method for forming an impurity diffusion layer on the back surface 1B.
  • the solar cell manufacturing method according to the sixth embodiment uses step S104SS in which heat treatment is performed in an atmosphere containing POCl 3 and O 2 with respect to the solar cell manufacturing method shown in the first and second embodiments. Since the method is the same except that the method of forming the impurity diffusion layer on the back surface 1B is different, the details are omitted as referring to the first to second embodiments.
  • FIG. 14 is a flowchart of the manufacturing process of the solar cell of the sixth embodiment.
  • FIG. 15 is a cross-sectional view of main parts of the solar cell in the manufacturing process of the solar cell according to the sixth embodiment.
  • the method for manufacturing a solar cell according to the sixth embodiment to form the first conductive type impurity layer, not only oxygen at timing t 11 from t 02 shown in an explanatory diagram showing the environment in the furnace of FIG diffusion
  • a source for example POCl 3 gas
  • the supply of POCl 3 is started from t 02 and the supply of POCl 3 is stopped before reaching t 11 .
  • the back surface 1B is in direct contact with POCl 3 , so that the n-type diffusion layer 23 is formed on the back surface 1B.
  • the light receiving surface 1A is covered with the BSG film 2 and the silicon oxide film 3, the n-type diffusion layer is not formed.
  • oxygen is introduced to form a silicon oxide film 24 on the back surface 1B. Since the silicon oxide film 24 can suppress the diffusion of impurities indicating the first conductivity type from POCl 3 adhering to the back surface 1B, the amount of impurities in the n-type diffusion layer is kept constant after the silicon oxide film 24 is formed. Can keep.
  • step S104SS may introduce oxygen a plurality of times as in the fifth embodiment.
  • the n-type diffusion layer 24 can be formed by the same heat treatment as the formation of the p-type diffusion layer 7, and the number of steps can be reduced. Furthermore, since the silicon oxide film 24 formed on the back surface 1B can suppress an increase in the concentration of the n-type diffusion layer, a solar cell that can form a low-concentration n-type diffusion layer and has a long carrier life and excellent photoelectric conversion efficiency. Is realized.
  • Embodiment 7 in addition to the method for manufacturing a solar cell according to the sixth embodiment, formation of a high concentration n-type diffusion layer 20 from the solid phase diffusion source 19 is added from the back surface. That is, the solar cell manufacturing method according to the seventh embodiment uses step S104SS in which heat treatment is performed in an atmosphere containing POCl 3 and O 2 as compared with the solar cell manufacturing method shown in the sixth embodiment. The point that the high-concentration n-type diffusion layer 20 is formed from the solid-phase diffusion source 19 on the 1B side is the same except that it differs, so refer to the sixth embodiment and the first to second embodiments. Details are omitted.
  • FIG. 16 is a flowchart showing the main parts of the manufacturing process of the solar cell of the seventh embodiment.
  • FIGS. 17A and 17B are cross-sectional views of main parts of the solar cell in the manufacturing process of the solar cell of the seventh embodiment.
  • a heat treatment step 104SS is performed in which heat treatment is performed in an atmosphere containing POCl 3 and O 2 .
  • a diffusion source for forming the first conductivity type impurity layer for example, POCl 3 gas, is supplied at the timing t 02 to t 11 shown in the explanatory view showing the environment in the furnace of FIG. Specifically, the supply of POCl 3 is started from t 02 and the supply of POCl 3 is stopped before reaching t 11 . During this time, as shown in FIG.
  • the back surface 1B is in direct contact with POCl 3 , so that the n-type diffusion layer 23 is formed on the back surface 1B.
  • the n-type diffusion layer is not formed.
  • oxygen is introduced to form a silicon oxide film 24 on the back surface 1B. Since the silicon oxide film 24 can suppress the diffusion of impurities indicating the first conductivity type from POCl 3 adhering to the back surface 1B, the amount of impurities in the n-type diffusion layer is kept constant after the silicon oxide film 24 is formed. Can keep.
  • the solid phase diffusion source forming step 108a contains high-concentration n-type impurities as shown in FIG. 17A.
  • the diffusion source 19 to be patterned is formed in an arbitrary region using a printing process.
  • the n-type diffusion layer 20 is formed immediately below the diffusion source 19 formed at an arbitrary position as shown in FIG.
  • the removal of the solid phase diffusion source is desirably performed between steps S108b and S109 or after S109.
  • a hydrofluoric acid aqueous solution is used to remove the solid phase diffusion source.
  • a solar cell having the low concentration n-type diffusion layer 23 and the high concentration n-type diffusion layer 20 on the back surface 1B side can be formed without increasing the number of steps. Without increasing, a solar cell having a long carrier life and excellent photoelectric conversion efficiency is realized.
  • the back surface is formed while continuously performing heat treatment after forming a film including an impurity serving as a solid phase diffusion source on one surface such as the light receiving surface side.
  • the manufacturing process for preventing the impurity diffusion from this product is shown. Specifically, during the heat treatment, the usual heat treatment is performed using an inert gas such as nitrogen or argon, and before and after the heat treatment is performed in an atmosphere in which oxygen is introduced, and three-stage heat treatment is performed. To implement. The supply of oxygen is performed before and after heat treatment in an oxygen-free atmosphere for diffusing impurities from the solid phase diffusion source film.
  • oxygen that touches the furnace after it is introduced into the furnace forms an oxide film as a diffusion barrier at the product and substrate interface on the backside of the substrate, and impurity diffusion is carried out from the film while the supply of oxygen is stopped. Impurities are diffused.
  • An oxide film is also formed on the film formation surface of the solid phase diffusion source by oxygen introduced at the end of the heat treatment, and a function is added as a barrier against another type of diffusion performed subsequently. By this method, impurities can be diffused only on the film formation surface.
  • the oxidation process is performed at a temperature of 700 ° C. to 850 ° C. for 1 to 20 minutes.
  • the oxidation step is desirably performed at a temperature at which impurities are not diffused and at which an oxide film with excellent film quality can be formed. Therefore, the temperature condition varies depending on the type of impurities and the composition of the substrate. More preferably, when the impurity is phosphorus, the temperature is preferably 700 to 760 ° C., and when the impurity is boron, the temperature is preferably about 740 to 800 ° C. When the value is higher than the upper limit, the diffusion of impurities starts. When the value is lower than the lower limit, the oxidation rate is slowed and the film quality is also lowered.
  • Embodiments 1 to 7 the semiconductor substrate made of silicon has been described. However, the present invention can also be applied to a compound semiconductor substrate such as GaAs or GaN.
  • the temperature in the second step for impurity diffusion is determined by the type of impurity to be diffused and can be changed as appropriate.
  • the diffusion atmosphere can be a reducing atmosphere such as a hydrogen atmosphere in order to control the diffusion rate depending on the type of impurities, and can be adjusted as appropriate.
  • the configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

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Abstract

L'invention permet d'obtenir un procédé de fabrication d'une cellule solaire présentant une grande longévité des porteurs de charge, le mélange d'une impureté dans la surface arrière étant supprimé lorsque la diffusion d'impuretés est réalisée par un traitement thermique après la formation d'une pellicule d'une source de diffusion en phase solide. Ce procédé de fabrication d'une cellule solaire consiste : en une étape de formation d'une pellicule de source de diffusion en phase solide sur une première surface principale d'un substrat semi-conducteur d'un premier type de conductivité, ledit substrat semi-conducteur comportant la première surface principale et une deuxième surface principale; et une étape de traitement thermique de formation d'une couche de diffusion d'un deuxième type de conductivité par diffusion d'une impureté du deuxième type de conductivité depuis la source de diffusion en phase solide au moyen d'un traitement thermique. L'étape de traitement thermique consiste : en une première étape dans laquelle le substrat semi-conducteur est chauffé à une première température T1 pendant une période t0, tout en injectant de l'oxygène; en une deuxième étape dans laquelle l'injection d'oxygène est arrêtée et le substrat semi-conducteur est chauffé à une deuxième température T2 pendant une période t1, tout en injectant un gaz inerte, de sorte qu'une impureté y est diffusée; et en une troisième étape dans laquelle le substrat semi-conducteur est chauffé à une troisième température T2 pendant une période t2, tout en injectant de nouveau de l'oxygène. Dans cette connexion, les première, deuxième et troisième étapes sont conduites dans un même four.
PCT/JP2016/052013 2015-02-10 2016-01-25 Procédé de fabrication de cellule solaire, et cellule solaire WO2016129372A1 (fr)

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