WO2016127480A1 - 阵列基板及其断线修补方法 - Google Patents

阵列基板及其断线修补方法 Download PDF

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Publication number
WO2016127480A1
WO2016127480A1 PCT/CN2015/075677 CN2015075677W WO2016127480A1 WO 2016127480 A1 WO2016127480 A1 WO 2016127480A1 CN 2015075677 W CN2015075677 W CN 2015075677W WO 2016127480 A1 WO2016127480 A1 WO 2016127480A1
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Prior art keywords
layer
array substrate
source
line
substrate
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PCT/CN2015/075677
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English (en)
French (fr)
Inventor
李珊
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深圳市华星光电技术有限公司
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Priority to JP2017541662A priority Critical patent/JP6518332B2/ja
Priority to US14/758,807 priority patent/US9632377B2/en
Priority to GB1708424.5A priority patent/GB2548041B/en
Priority to KR1020177015550A priority patent/KR101971810B1/ko
Publication of WO2016127480A1 publication Critical patent/WO2016127480A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a wire break repair method of the array substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • a liquid crystal display panel consists of a color filter substrate (CF), a thin film transistor substrate (TFT, Thin Film Transistor), a liquid crystal (LC) sandwiched between a color filter substrate and a thin film transistor substrate, and a sealant frame ( Sealant), the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC and printed circuit board is pressed).
  • Array array
  • Cell middle cell
  • rear module assembly Process drive IC and printed circuit board is pressed.
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules; the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate; the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • IPS In-Plane Switching
  • FFS Fringe Field Switching
  • COA Color Filter On Array
  • These technologies require relatively high flatness of the display substrate, and it is usually required to deposit a thick organic layer such as a color resist layer, a flat layer, or the like on the array substrate.
  • the metal wires may be broken by the scan lines and the data lines.
  • the organic layer and the transparent electrode layer are removed first by the wire repairing machine, and then the wire is repaired by laser welding, and the wire repairing takes a long time. When the organic layer cannot be completely removed, it may affect the success rate of the product's wire break repair.
  • An object of the present invention is to provide an array substrate having a plurality of openings disposed above the gate scan line and the source and drain data lines, the openings being formed at the through holes of the organic layer, so that the present invention When the array substrate is repaired, the U-shaped long line can be laser-welded directly at the openings at both ends of the broken line to improve the repair efficiency and repair success rate of the broken line.
  • Another object of the present invention is to provide a method for repairing a wire breakage of an array substrate, which is formed by directly laser-welding a U-shaped long line at an opening at both ends of the broken wire, so that the broken gate scan line or the source-drain data line is restored.
  • the process of removing the organic layer by laser is omitted, the wire repairing efficiency and the repair success rate are improved, and the laser loss of the machine when the organic layer is removed is effectively reduced, thereby improving the display quality of the liquid crystal panel product.
  • the present invention provides an array substrate comprising: a substrate, a gate scan line on the substrate, a gate insulating layer on the gate scan line and the substrate, and the gate is located on the gate a source drain data line over the gate insulating layer, a first passivation layer over the source drain data line and the gate insulating layer, an organic layer above the first passivation layer, and The organic layer and a second passivation layer over the first passivation layer;
  • the gate scan line and the source and drain data lines are vertically arranged on the substrate, and a through hole is formed on each of the intersections of the organic layer corresponding to the gate scan line and the source and drain data lines.
  • a second passivation layer is deposited on the via to form an opening.
  • the size of the opening was 15 ⁇ m ⁇ 15 ⁇ m.
  • the organic layer is a color resist layer or a flat layer.
  • the material of the first passivation layer and the second passivation layer is an inorganic material.
  • the thickness of the organic layer is greater than the thickness of the first passivation layer and the second passivation layer.
  • the substrate is a glass substrate.
  • the structure in which the array substrate is located at the opening includes a substrate, a gate scan line, a gate insulating layer, a source and drain data line, a first passivation layer, and a second passivation layer.
  • the present invention also provides an array substrate comprising: a substrate, a gate scan line on the substrate, a gate insulating layer on the gate scan line and the substrate, located in the gate insulating layer a source drain data line, a first passivation layer over the source drain data line and the gate insulating layer, an organic layer over the first passivation layer, and an organic layer And a second passivation layer over the first passivation layer;
  • the gate scan line and the source and drain data lines are vertically arranged on the substrate, and a through hole is formed on each of the intersections of the organic layer corresponding to the gate scan line and the source and drain data lines.
  • the size of the opening is 15 ⁇ m ⁇ 15 ⁇ m;
  • the organic layer is a color resist layer or a flat layer.
  • the invention also provides a wire break repairing method for an array substrate, which is located on a gate scan line or a source/drain data line when a gate scan line or a source/drain data line on the array substrate is broken.
  • Laser-welded U-shaped long lines are formed at the openings at both ends of the line, so that the broken gate scan lines or source-drain data lines are restored.
  • the material of the U-shaped long line is tungsten hexacarbonyl.
  • the size of the opening was 15 ⁇ m ⁇ 15 ⁇ m.
  • the present invention provides an array substrate and a wire break repair method thereof, wherein a through hole is provided at each intersection of a gate scan line and a source/drain data line on an organic layer,
  • the second passivation layer is deposited on the through hole to form an opening, so that when the gate scan line or the source/drain data line on the array substrate of the present invention is disconnected, the U-shaped laser can be directly connected at the opening at both ends of the broken line.
  • the long line restores the disconnected gate scan line or the source-drain data line.
  • This repair method eliminates the laser removal process of the organic layer, effectively reduces the laser loss of the machine when the organic layer is removed, and improves the disconnection. Repair efficiency and repair success rate, thereby improving the display quality of LCD panel products.
  • FIG. 1 is a schematic structural view of an array substrate of the present invention
  • FIG. 2 is a cross-sectional view taken along line A-A of the opening on the array substrate shown in FIG. 1;
  • FIG. 3 is a cross-sectional view taken along line B-B of the opening on the array substrate shown in FIG. 1;
  • FIG. 4 is a schematic diagram of performing gate scan line break repair on the array substrate shown in FIG. 1 by using a method of laser welding a U-shaped long line;
  • FIG. 5 is a schematic diagram of performing source-drain data line disconnection repair on the array substrate shown in FIG. 1 by laser-welding a U-shaped long line.
  • an embodiment of an array substrate includes: a substrate 1 , a gate scan line 2 located above the substrate 1 , and the substrate scan line 2 and the substrate a gate insulating layer 4 over 1 , a source and drain data line 5 over the gate insulating layer 4 , and a first passivation over the source and drain data lines 5 and the gate insulating layer 4 A layer 8, an organic layer 9 over the first passivation layer 8, and a second passivation layer 10 over the organic layer 9 and the first passivation layer 8.
  • the organic layer 9 is a color resist layer or a flat layer; the materials of the first passivation layer 8 and the second passivation layer 10 are inorganic materials; the thickness of the organic layer 9 is greater than the first blunt The thickness of the layer 8 and the second passivation layer 10; the substrate 1 is a glass substrate.
  • the gate scan line 2 and the source and drain data lines 5 are vertically arranged on the substrate 1 , and the organic layer 9 corresponds to each intersection of the gate scan line 2 and the source and drain data lines 5 .
  • a through hole is formed, and the second passivation layer 10 is deposited on the through hole to form an opening 11.
  • the structure of the array substrate at the opening 11 includes a substrate 1 and a gate scan line. 2.
  • the size of the opening 11 is 15 ⁇ m ⁇ 15 ⁇ m.
  • the array substrate provided by the present invention is provided as an gate scan line 2 and a source drain by providing an opening 11 at an intersection of the second passivation layer 10 corresponding to the gate scan line 2 and the source/drain data line 5.
  • the method for repairing the array substrate of the present invention by laser welding U-shaped long wires is as follows:
  • the laser is fused by the opening 11 at the ends of the broken line at the gate scan line 2.
  • the long line 15 is shaped such that the broken gate scan line 2 is restored.
  • the laser is fused through the opening 11 at both ends of the source-drain data line 5 at the broken line.
  • the U-shaped long line 15 causes the disconnected source-drain data line 5 to resume connection.
  • the material of the U-shaped long line 15 used in the wire-cut repairing method of the array substrate is tungsten hexacarbonyl.
  • the method for repairing the disconnection of the array substrate shown in FIG. 4 and FIG. 5 is that the organic layer 9 is not disposed above the gate scan line 2 or the source/drain data line 5 at the opening 11 of the array substrate, thereby saving Going to the process of removing the organic layer 9 by laser, by laser directly at the opening 11 at both ends of the broken line
  • the U-shaped long line 15 is fused to complete the disconnection of the gate scan line 2 or the source-drain data line 5, thereby effectively reducing the laser loss of the machine when the organic layer is removed, improving the repair efficiency and success rate of the disconnection, and thereby improving Display quality of LCD panel products.
  • the present invention provides an array substrate and a wire break repair method thereof, wherein a through hole is provided at each intersection on the organic layer corresponding to the gate scan line and the source/drain data line, the second The passivation layer is deposited at the through hole to form an opening, so that when the gate scan line or the source/drain data line on the array substrate of the present invention is disconnected, the U-shaped long line can be directly laser-fused at the opening at both ends of the broken line. The disconnected gate scan line or the source-drain data line is restored.
  • the repair method eliminates the laser removal process of the organic layer, effectively reduces the laser loss of the machine when the organic layer is removed, and improves the repair efficiency of the wire breakage. And the success rate of repair, thereby improving the display quality of liquid crystal panel products.

Abstract

一种阵列基板及其断线修补方法，通过在有机层（9）上对应于栅极扫描线（2）与源漏极数据线（5）的每一交叉口处设置通孔，第二钝化层（10）沉积于该通孔处形成开口（11），通孔使得阵列基板上的栅极扫描线（2）或源漏极数据线发生断线（5）时，可以直接在断线处两端的开口（11）处镭射熔接U字型长线（15），使断开的栅极扫描线（2）或源漏极数据线（5）恢复连接，该修补方法省去了镭射去除有机层的工序，有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。

Description

阵列基板及其断线修补方法 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及该阵列基板的断线修补方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管基板(TFT，Thin Film Transistor)、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
随着液晶面板技术的不断发展，越来越多的新技术应用在薄膜晶体管阵列基板上，如平面转换(In-Plane Switching，IPS)，边缘场开关技术(Fringe Field Switching，FFS)，色彩滤镜矩阵(Color Filter On Array，COA)等技术。这些技术对显示基板的平坦度要求比较高，通常需要在阵列基板上沉积一层较厚的有机层如色阻层、平坦层等。在阵列基板制作过程中，由于各种因素的影响，可能导致金属导线包括扫描线和数据线存在断线的情况。为了修补此类阵列基板的断线，目前是通过断线修补机先去除有机层和透明电极层后，再用镭射熔接对断线处进行修补，断线修补耗时长，当 有机层无法完全去除时，可能会影响产品的断线修补成功率。
发明内容
本发明的目的在于提供一种阵列基板，所述阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口形成于有机层的通孔处，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口处镭射熔接U字型长线，提高断线修补效率和修补成功率。
本发明的目的还在于提供一种阵列基板的断线修补方法，通过直接在断线处两端的开口处镭射熔接U字型长线，使得断开的栅极扫描线或源漏极数据线恢复连接，省去了镭射去除有机层的工序，提高了断线修补效率和修补成功率，同时有效地减少去除有机层时的机台镭射损耗，进而提高液晶面板产品的显示品质。
为实现上述目的，本发明提供一种阵列基板，包括：基板，位于所述基板之上的栅极扫描线，位于所述栅极扫描线和基板之上的栅极绝缘层，位于所述栅极绝缘层之上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层之上的第一钝化层，位于所述第一钝化层之上的有机层，以及位于所述有机层与第一钝化层之上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有通孔，所述第二钝化层沉积于该通孔处形成开口。
所述开口的大小为15μm×15μm。
所述有机层为色阻层或者平坦层。
所述第一钝化层和第二钝化层的材料为无机材料。
所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
所述基板为玻璃基板。
所述阵列基板位于开口处的结构包括基板、栅极扫描线、栅极绝缘层、源漏极数据线、第一钝化层、以及第二钝化层。
本发明还提供一种阵列基板，包括：基板，位于所述基板之上的栅极扫描线，位于所述栅极扫描线和基板之上的栅极绝缘层，位于所述栅极绝缘层之上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层之上的第一钝化层，位于所述第一钝化层之上的有机层，以及位于所述有机层与第一钝化层之上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有通孔， 所述第二钝化层沉积于该通孔处形成开口；
其中，所述开口的大小为15μm×15μm；
其中，所述有机层为色阻层或者平坦层。
本发明还提供一种阵列基板的断线修补方法，当所述阵列基板上的栅极扫描线或源漏极数据线断线时，通过在栅极扫描线或源漏极数据线上位于断线处两端的开口处镭射熔接U字型长线，使得断开的栅极扫描线或源漏极数据线恢复连接。
所述U字型长线的材料为六羰基钨。
所述开口的大小为15μm×15μm。
本发明的有益效果：本发明提供一种阵列基板及其断线修补方法，通过在有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处设置通孔，所述第二钝化层沉积于该通孔处形成开口，使本发明阵列基板上的栅极扫描线或源漏极数据线发生断线时，可以直接在断线处两端的开口处镭射熔接U字型长线，使断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，有效地减少了去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明阵列基板的结构示意图；
图2为图1所示阵列基板上开口处沿A-A线的剖面图；
图3为图1所示阵列基板上开口处沿B-B线的剖面图；
图4为采用镭射熔接U型长线的方法对图1所示的阵列基板进行栅极扫描线断线修补的示意图；
图5为采用镭射熔接U型长线的方法对图1所示的阵列基板进行源漏极数据线断线修补的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-图3，为本发明阵列基板的实施例，所述阵列基板包括：基板1，位于所述基板1之上的栅极扫描线2，位于所述栅极扫描线2和基板1之上的栅极绝缘层4，位于所述栅极绝缘层4之上的源漏极数据线5，位于所述源漏极数据线5与栅极绝缘层4之上的第一钝化层8，位于所述第一钝化层8之上的有机层9，以及位于所述有机层9与第一钝化层8之上的第二钝化层10。
具体的，所述有机层9为色阻层或者平坦层；所述第一钝化层8和第二钝化层10的材料为无机材料；所述有机层9的厚度大于所述第一钝化层8和第二钝化层10的厚度；所述基板1为玻璃基板。
具体的，所述栅极扫描线2与源漏极数据线5在基板1上垂直交叉排列，所述有机层9上对应于栅极扫描线2与源漏极数据线5的每一交叉口处形成有通孔，所述第二钝化层10沉积于通孔处形成开口11，如图2和图3所示，所述阵列基板位于开口11处的结构包括基板1、栅极扫描线2、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10。
优选的，所述开口11的大小为15μm×15μm。
本发明提供的阵列基板，通过在第二钝化层10上对应于栅极扫描线2和源漏极数据线5的交叉口处设置开口11，预留作为栅极扫描线2和源漏极数据线5的断线修复点，利用该开口11，可通过镭射熔接U型长线15的方式对断线进行修复。
基于上述阵列基板结构，如图4、图5所示，通过镭射熔接U型长线对本发明的阵列基板进行断线修补的方法为：
如图1与图4所示，当所述阵列基板上的栅极扫描线2因制程不良导致断线时，通过在栅极扫描线2上位于断线处两端的开口11处镭射熔接U字型长线15，使得断开的栅极扫描线2恢复连接。
如图1与图5所示，当所述阵列基板上的源漏极数据线5因制程不良导致断线时，通过在源漏极数据线5上位于断线处两端的开口11处镭射熔接U字型长线15，使得断开的源漏极数据线5恢复连接。
优选的，上述阵列基板的断线修补方法中所采用的U字型长线15的材料为六羰基钨。
图4、图5所示的阵列基板的断线修补方法，由于所述阵列基板在开口11处所述栅极扫描线2或源漏极数据线5的上方并未设置有机层9，从而省去了镭射去除有机层9的工序，通过直接在断线处两端的开口11处镭射 熔接U字型长线15，完成对栅极扫描线2或源漏极数据线5的断线修复有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率及成功率，进而提高液晶面板产品的显示品质。
综上所述，本发明提供一种阵列基板及其断线修补方法，通过在有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处设置通孔，所述第二钝化层沉积于该通孔处形成开口，使得本发明阵列基板上的栅极扫描线或源漏极数据线发生断线时，可以直接在断线处两端的开口处镭射熔接U字型长线，使断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种阵列基板，包括：基板，位于所述基板之上的栅极扫描线，位于所述栅极扫描线和基板之上的栅极绝缘层，位于所述栅极绝缘层之上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层之上的第一钝化层，位于所述第一钝化层之上的有机层，以及位于所述有机层与第一钝化层之上的第二钝化层；
    其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有通孔，所述第二钝化层沉积于该通孔处形成开口。
  2. 如权利要求1所述的阵列基板，其中，所述开口的大小为15μm×15μm。
  3. 如权利要求1所述的阵列基板，其中，所述有机层为色阻层或者平坦层。
  4. 如权利要求1所述的阵列基板，其中，所述第一钝化层和第二钝化层的材料为无机材料。
  5. 如权利要求1所述的阵列基板，其中，所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
  6. 如权利要求1所述的阵列基板，其中，所述基板为玻璃基板。
  7. 如权利要求1所述的阵列基板，其中，所述阵列基板位于开口处的结构包括基板、栅极扫描线、栅极绝缘层、源漏极数据线、第一钝化层、以及第二钝化层。
  8. 一种阵列基板，包括：基板，位于所述基板之上的栅极扫描线，位于所述栅极扫描线和基板之上的栅极绝缘层，位于所述栅极绝缘层之上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层之上的第一钝化层，位于所述第一钝化层之上的有机层，以及位于所述有机层与第一钝化层之上的第二钝化层；
    其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有通孔，所述第二钝化层沉积于该通孔处形成开口；
    其中，所述开口的大小为15μm×15μm；
    其中，所述有机层为色阻层或者平坦层。
  9. 如权利要求8所述的阵列基板，其中，所述第一钝化层和第二钝化 层的材料为无机材料。
  10. 如权利要求8所述的阵列基板，其中，所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
  11. 如权利要求8所述的阵列基板，其中，所述基板为玻璃基板。
  12. 如权利要求8所述的阵列基板，其中，所述阵列基板位于开口处的结构包括基板、栅极扫描线、栅极绝缘层、源漏极数据线、第一钝化层、以及第二钝化层。
  13. 一种如权利要求1所述的阵列基板的断线修补方法，当所述阵列基板上的栅极扫描线或源漏极数据线断线时，通过在栅极扫描线或源漏极数据线上位于断线处两端的开口处镭射熔接U字型长线，使得断开的栅极扫描线或源漏极数据线恢复连接。
  14. 如权利要求13所述的阵列基板的断线修补方法，其中，所述U字型长线的材料为六羰基钨。
  15. 如权利要求13所述的阵列基板的断线修补方法，其中，所述开口的大小为15μm×15μm。
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