WO2016107414A1 - 一种组合物在阻挡层抛光中的应用 - Google Patents

一种组合物在阻挡层抛光中的应用 Download PDF

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WO2016107414A1
WO2016107414A1 PCT/CN2015/097567 CN2015097567W WO2016107414A1 WO 2016107414 A1 WO2016107414 A1 WO 2016107414A1 CN 2015097567 W CN2015097567 W CN 2015097567W WO 2016107414 A1 WO2016107414 A1 WO 2016107414A1
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acid
polishing
chemical mechanical
mechanical polishing
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PCT/CN2015/097567
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French (fr)
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王晨
何华锋
周文婷
李星
周仁杰
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王晨
何华锋
周文婷
李星
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Publication of WO2016107414A1 publication Critical patent/WO2016107414A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Definitions

  • the invention relates to the use of a composition in the polishing of barrier layers.
  • CMP Chemical mechanical polishing
  • the barrier layer is typically interposed between silicon dioxide and copper lines to block the diffusion of copper ions into the dielectric layer (silicon dioxide).
  • the copper above the barrier layer is removed. Since the polishing speed of copper at this time is fast, various defects (for example, butterfly defect polishing and erosion erosion) are formed.
  • polishing copper it is usually required that the copper CMP be stopped on the barrier layer first, and then another special barrier polishing liquid is removed to remove the barrier layer (for example, germanium) while performing butterfly-shaped dishing and erosion (erosion). Fix to achieve global flattening.
  • the polishing rate of copper by the acid barrier polishing liquid is easily adjusted by hydrogen peroxide, and the hydrogen peroxide is stable, but the corrosion rate of copper is faster than that of alkali; the polishing speed of the alkaline barrier polishing liquid to copper is not easily adjusted by hydrogen peroxide, and the hydrogen peroxide is not Stable, relatively acidic polishing solution, copper corrosion rate is easy to control.
  • Niobium and titanium nitride are commonly used metals for barrier layers.
  • US7241725 and US7300480 use imine, yttrium and ytterbium to enhance the polishing rate of the barrier layer.
  • US7491252B2 uses cesium hydrochloride to increase the polishing rate of the barrier layer.
  • US7790618B2 uses an imine derivative and a polyethylene glycol sulfate surfactant for polishing the barrier layer.
  • US 20080276543 uses cerium carbonate compounds to increase the polishing rate of cerium. In various efforts to increase the polishing rate of the barrier layer (tantalum and titanium nitride), the most significant function is still to increase the mechanical force, that is, to increase the solid content of the abrasive particles.
  • barrier polishing In addition to the common barrier metals such as tantalum and titanium nitride, barrier polishing also polishes copper, silica, and low-K materials. Only by controlling the selection ratio between these materials and the absolute polishing speed can the planarization of the wafer surface be finally achieved.
  • the present invention is directed to a use of a composition in the polishing of a barrier layer, wherein the composition is added to a chemical mechanical polishing liquid, and the chemical mechanical polishing liquid comprises a silica sol, and the composition is tetramethylammonium hydroxide.
  • the composition is added to a chemical mechanical polishing liquid, and the chemical mechanical polishing liquid comprises a silica sol, and the composition is tetramethylammonium hydroxide.
  • alkyl benzene sulfonic acid compounds With alkyl benzene sulfonic acid compounds.
  • the content of the silica sol is 2% to 10% by mass.
  • the content of the tetramethylammonium hydroxide is 0.1% to 0.3% by mass.
  • alkylbenzenesulfonic acid compound is a linear alkylbenzenesulfonic acid.
  • linear alkylbenzenesulfonic acid is one or more selected from the group consisting of decaphenylbenzenesulfonic acid, dodecylbenzenesulfonic acid and cetylbenzenesulfonic acid.
  • concentration of the alkylbenzenesulfonic acid compound is less than or equal to 20 ppm.
  • the chemical mechanical polishing liquid further comprises a complexing agent, a corrosion inhibitor, and an oxidizing agent.
  • the complexing agent is an organic phosphoric acid and a salt thereof.
  • the complexing agent is hydroxyethylidene diphosphonic acid, aminotrimethylenephosphonic acid and/or polyaminopolyether methylene phosphonic acid.
  • the content of the complexing agent is not limited, and may be, by way of example, 0.1 to 0.3% by mass.
  • the corrosion inhibitor is an azole compound.
  • the corrosion inhibitor is benzotriazole Oxazole.
  • the content of the corrosion inhibitor is 0.01 to 0.2% by mass.
  • the oxidizing agent is hydrogen peroxide.
  • the content of the oxidizing agent is not particularly limited, and may be, for example, 0.01 to 5% by mass.
  • the chemical mechanical polishing liquid further comprises a low dielectric material speed inhibitor.
  • the low dielectric material speed inhibitor is PVP.
  • the K value of the PVP may be 12, 17, or 30.
  • the content of the low dielectric material speed inhibitor is 0.01% to 0.1% by mass.
  • the chemical mechanical polishing liquid is acidic.
  • the water is the balance.
  • Another aspect of the present invention is to provide an application of tetramethylammonium hydroxide for improving the stability of a silica sol in a chemical mechanical polishing liquid.
  • Yet another aspect of the present invention provides a use of an alkylbenzenesulfonic acid compound for inhibiting copper corrosion.
  • TMAH can enhance the stability of silica sol.
  • Alkylbenzenesulfonic acid inhibits copper corrosion while not inhibiting the polishing of the barrier layer TiN.
  • Table 1 shows Examples 1 to 20 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, the components other than H 2 O 2 were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO 3 . Add H 2 O 2 before use and mix well.
  • HEDP hydroxyethylidene diphosphonic acid
  • ATMP aminotrimethylenephosphonic acid
  • PAPEMP Polyaminopolyether methylene phosphonic acid.
  • Table 2 shows the polishing effect, stability, and corrosion effect on copper of Comparative Polishing Slurry 1 and the polishing slurry Examples 1-20 of the present invention.
  • Polishing conditions The polishing liquid was polished on Mirra, Fujibo polishing pad, pressing pressure 1.5 PSI, polishing head/disc rotation speed: 93/87, and polishing liquid flow rate: 200 ml/min.
  • Cu metal copper thin film wafer of silicon substrate
  • Ta metal germanium thin film wafer of silicon substrate
  • Teos dielectric thin film silicon dioxide wafer of silicon substrate
  • BD low dielectric material of silicon substrate Thin film wafer
  • TiN titanium nitride thin film wafer on silicon substrate.
  • Comparative Example 1 shows that in the absence of TMAH and alkylbenzene sulfonic acid, the stability of the silica sol is poor.
  • the average particle size of the abrasive particles increases by 40 nm in one month, and the static corrosion rate reaches 10 A/min at 40 degrees Celsius. The polishing requirements of the layer.
  • Example 1 shows that the addition of TMAH to an unstable system significantly improves the stability of the silica sol, and the average particle size of the abrasive particles does not increase within one month.
  • Example 2 shows that the alkylbenzene sulfonic acid was added on the basis of Comparative Example 1, and the static etching speed of copper at 40 ° C was lowered to 1 A/min, and the surface of copper was well protected.
  • Examples 2, 3, 4, and 5 the content of alkylbenzenesulfonic acid gradually increased, and the polishing rate of TiN was gradually suppressed, gradually decreasing from 800 A to 50 A, indicating that the content of alkylbenzenesulfonic acid was concentration-specific. Requires that a concentration higher than 20 PPM significantly suppresses the polishing rate of TiN.
  • Example 6 contains tetrabutylammonium hydroxide TBAH, which does not contain tetramethylammonium hydroxide TMAH, both of which are quaternary ammonium salts, but only TMAH stabilizes the silica sol, and TBAH may destroy the stability of the silica sol. The average particle size of the particles is rapidly increased.
  • Example 7 the formulation contained both TMAH and alkylbenzenesulfonic acid, the static corrosion was reduced to 1 A/min, the stability of the silica sol was good, and the polishing rate of TiN was not inhibited.
  • Examples 14, 15, and 16 continue to contain (BD) low dielectric material speed modifiers, which can further adjust the polishing rate of (BD) low dielectric materials while the polishing speed of other materials is unaffected.
  • Examples 17 and 18 show that when the pH is greater than 4.0, the polishing rate of various materials is lowered, and the optimum pH is between 2.0 and 4.0.
  • Examples 19 and 20 show that when the content of TMAH is less than 0.1%, the stability to silica sol is weakened, and the average particle size of the abrasive particles is gradually increased with time.
  • wt% of the present invention refers to the mass percentage.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本发明旨在提供一种组合物在阻挡层抛光中的应用，其中，该组合物被加入化学机械抛光液中，且化学机械抛光液中包括硅溶胶，该组合物为四甲基氢氧化铵与烷基苯磺酸类化合物。

Description

一种组合物在阻挡层抛光中的应用 技术领域
本发明涉及一种组合物在阻挡层抛光中的应用。
背景技术
化学机械抛光(CMP)，是实现芯片表面平坦化的最有效方法。阻挡层通常介于二氧化硅和铜线之间，起到阻挡铜离子向介电层(二氧化硅)扩散的作用。抛光时，首先阻挡层之上的铜被去除。由于此时铜的抛光速度很快，会形成各种缺陷(例如：蝶形缺陷dishing,和侵蚀erosion)。在抛光铜时，通常要求铜CMP先停止在阻挡层上，然后换另外一种专用的阻挡层抛光液，去除阻挡层(例如钽)，同时对蝶形缺陷(dishing)和侵蚀(erosion)进行修正，实现全局平坦化。
商业化的阻挡层抛光液有酸性和碱性两种，各有优缺点。例如酸性阻挡层抛光液对铜的抛光速度容易通过双氧水调节，且双氧水稳定，但是铜的腐蚀速度比碱性快；碱性阻挡层抛光液对铜的抛光速度不容易通过双氧水调节，且双氧水不稳定，相对酸性抛光液，铜的腐蚀速度容易控制。
钽和氮化钛是阻挡层常用的金属。在现有的抛光技术中，US7241725、US7300480用亚胺、肼、胍提升阻挡层的抛光速度。US7491252B2用盐酸胍提升阻挡层的抛光速度。US7790618B2用到亚胺衍生物和聚乙二醇硫酸盐表面活性剂，用于阻挡层的抛光。CN200510030871.9用有机膦酸、聚丙烯酸类、氧化 剂提高钽的抛光速度。US 20080276543用碳酸胍类化合物提高钽的抛光速度。在提高阻挡层(钽和氮化钛)抛光速度的各种努力中，起作用最明显的仍然是增加机械力，即：增加研磨颗粒的固含量。
阻挡层抛光除了会涉及钽和氮化钛这类常用的阻挡层金属以外，还会同时对铜、二氧化硅、low-K材料进行抛光。只有控制好这些材料之间的选择比以及绝对的抛光速度，才能最终实现硅片表面的平坦化。
发明内容
本发明旨在提供一种组合物在阻挡层抛光中的应用，其中，该组合物被加入化学机械抛光液中，且化学机械抛光液中包括硅溶胶，该组合物为四甲基氢氧化铵与烷基苯磺酸类化合物。
其中，所述硅溶胶的含量为质量百分比2％～10％。
其中，所述四甲基氢氧化铵的含量为质量百分比0.1％～0.3％。
其中，所述烷基苯磺酸类化合物是直链烷基苯磺酸。
其中，所述直链烷基苯磺酸选自十烷基苯磺酸、十二烷基苯磺酸、十六烷基苯磺酸中的一种或多种。
其中，所述烷基苯磺酸类化合物浓度小于或等于20ppm。
其中，所述化学机械抛光液还包括络合剂、腐蚀抑制剂、氧化剂。
其中，所述络合剂为有机磷酸及其盐。其中，所述络合剂为羟基乙叉二膦酸、氨基三亚甲基膦酸和/或多氨基多醚基甲叉膦酸。络合剂的含量无任何限定，作为举例可为质量百分比0.1～0.3％。
其中，所述腐蚀抑制剂为唑类化合物。其中，所述腐蚀抑制剂为苯并三氮 唑。其中，所述腐蚀抑制剂的含量为质量百分比0.01～0.2％。
其中，所述氧化剂为双氧水。氧化剂的含量无特殊限定，作为举例可为质量百分比0.01～5％。
其中，所述化学机械抛光液还包括低介电材料速度抑制剂。
其中，所述低介电材料速度抑制剂为PVP。其中，所述PVP的k值可为12、17、30。
其中，所述低介电材料速度抑制剂的含量为质量百分比0.01％～0.1％。
其中，所述化学机械抛光液为酸性。
其中，所述水为余量。
本发明的另一方面在于提供一种四甲基氢氧化铵在提高化学机械抛光液中硅溶胶稳定性的应用。
本发明的又一方面在于提供一种烷基苯磺酸类化合物在抑制铜腐蚀中的应用。
本发明的有益效果在于，本发明的申请人发现：
1.TMAH可增强硅溶胶的稳定性。
2.烷基苯磺酸抑制铜腐蚀，同时又不抑制阻挡层TiN的抛光。
3.同时含有四甲基氢氧化铵和和阴离子型的十二烷基苯磺酸，在增加硅溶胶稳定性的同时，还进一步抑制了对铜的腐蚀，提高了抛光液的稳定性和耐腐蚀性，可用于阻挡层的抛光。
具体实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。
表1给出了本发明的化学机械抛光液的实施例1～20，按表中所给配方，将除H2O2以外的其他组分混合均匀，用水补足质量百分比至100％。用KOH或HNO3调节到所需要的pH值。使用前加H2O2，混合均匀即可。
表1
Figure PCTCN2015097567-appb-000001
Figure PCTCN2015097567-appb-000002
其中，化合物名称缩写：
HEDP:羟基乙叉二膦酸；
ATMP:氨基三亚甲基膦酸；
PAPEMP:多氨基多醚基甲叉膦酸。
效果实施例
表2给出了对比抛光浆料1和本发明的抛光浆料实施例1-20组分的抛光效果、稳定性及对铜的腐蚀效果。
抛光条件：所配的抛光液在Mirra上抛光，Fujibo抛光垫，下压力1.5PSI,抛光头/盘转速：93/87,抛光液流量：200ml/min。
Cu:硅衬底的金属铜薄膜晶圆，Ta:硅衬底的金属钽薄膜晶圆，Teos:硅衬底的介电材料二氧化硅薄膜晶圆，BD：硅衬底的低介电材料薄膜晶圆，TiN：硅衬底的氮化钛薄膜晶圆。
稳定性研究的条件：将对比抛光浆料1和实施例1～20的抛光浆料放入烘箱，1个月后测量研磨颗粒平均粒径。
铜腐蚀研究的条件及实验过程：将装有对比例1和实施例1～20的抛光浆料的烧杯分别放入40摄氏度水浴中预热20分钟后，把4cm*4cm硅衬底的金属铜薄膜晶圆分别放入相应含有不同抛光浆料的烧杯中放置，几分钟后取出得出铜的腐蚀速度。
表2
Figure PCTCN2015097567-appb-000003
对比例1表明：在没有TMAH和烷基苯磺酸的情况下，硅溶胶的稳定性差，1个月内研磨颗粒平均粒径增长40nm,40摄氏度静态腐蚀速度达到10A/min，这不能满足阻挡层的抛光需求。
实施例1表明：在不稳定的体系中加入TMAH，硅溶胶的稳定性显著提高，1个月内研磨颗粒平均粒径不增长。
实施例2表明：在对比例1的基础上加入烷基苯磺酸，铜在40摄氏度条件下的静态腐蚀速度降低到1A/min，铜的表面得到很好的保护。
实施例2、3、4、5中：烷基苯磺酸的含量逐渐升高，TiN的抛光速度逐渐被抑制，从800A逐渐降低到50A，这表明烷基苯磺酸的含量是有浓度特定要求的，浓度高于20PPM时会显著抑制TiN抛光速度。
实施例6含有四丁基氢氧化铵TBAH,不含四甲基氢氧化铵TMAH，两者都是季胺盐，但是只有TMAH才对硅溶胶起稳定作用，用TBAH反而会破坏硅溶胶的稳定性，使颗粒平均粒径迅速增加。
实施例7至实施例16，配方中同时含有TMAH和烷基苯磺酸，静态腐蚀降低到1A/min,硅溶胶稳定性很好，TiN的抛光速度也没有被抑制。
实施例14、15、16继续含有(BD)低介电材料速度调节剂，可以进一步调节(BD)低介电材料的抛光速度，同时其他材料的抛光速度不受影响。
实施例17、18表明：pH值大于4.0时，各种材料的抛光速度会下降，最佳pH值是介于2.0到4.0之间。
实施例19、20表明：TMAH的含量低于0.1％时，对硅溶胶稳定能力减弱，研磨颗粒平均粒径随时间延长，逐渐增加。
应当理解的是，本发明所述wt％均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (20)

  1. 一种组合物在阻挡层抛光中的应用，其中，所述组合物被加入化学机械抛光液中，且所述化学机械抛光液中包括硅溶胶，其特征在于，所述组合物为四甲基氢氧化铵与烷基苯磺酸类化合物。
  2. 如权利要求1所述的应用，其中，所述硅溶胶的含量为质量百分比2％～10％。
  3. 如权利要求1所述的应用，其中，所述四甲基氢氧化铵的含量为质量百分比0.1％～0.3％。
  4. 如权利要求1所述的应用，其中，所述烷基苯磺酸类化合物是直链烷基苯磺酸。
  5. 如权利要求4所述的应用，其中，所述直链烷基苯磺酸选自十烷基苯磺酸、十二烷基苯磺酸、十六烷基苯磺酸中的一种或多种。
  6. 如权利要求1所述的应用，其中，所述烷基苯磺酸类化合物浓度小于或等于20ppm。
  7. 如权利要求1所述的应用，其中，所述化学机械抛光液还包括络合剂、腐蚀抑制剂、氧化剂。
  8. 如权利要求7所述的应用，其中，所述络合剂为有机磷酸及其盐。
  9. 如权利要求8所述的应用，其中，所述络合剂为羟基乙叉二膦酸、氨基三亚甲基膦酸和/或多氨基多醚基甲叉膦酸。
  10. 如权利要求7所述的应用，其中，所述腐蚀抑制剂为唑类化合物。
  11. 如权利要求10所述的应用，其中，所述腐蚀抑制剂为苯并三氮唑。
  12. 如权利要求7所述的应用，其中，所述腐蚀抑制剂的含量为质量百分比 0.01～0.2％。
  13. 如权利要求7所述的应用，其中，所述氧化剂为双氧水。
  14. 如权利要求7所述的应用，其中，所述化学机械抛光液还包括低介电材料速度抑制剂。
  15. 如权利要求14所述的应用，其中，所述低介电材料速度抑制剂为PVP。
  16. 如权利要求15所述的应用，其中，所述PVP的k值可为12、17、30。
  17. 如权利要求14所述的应用，其中，所述低介电材料速度抑制剂的含量为质量百分比0.01％～0.1％
  18. 如权利要求1所述的应用，其中，所述化学机械抛光液为酸性。
  19. 如权利要求1中所述的四甲基氢氧化铵在提高化学机械抛光液中硅溶胶稳定性的应用。
  20. 如权利要求1中所述的烷基苯磺酸类化合物在抑制铜腐蚀中的应用。
PCT/CN2015/097567 2014-12-29 2015-12-16 一种组合物在阻挡层抛光中的应用 WO2016107414A1 (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115369405A (zh) * 2021-10-21 2022-11-22 江苏和达电子科技有限公司 一种双氧水系金属蚀刻液组合物及其使用方法
CN115386302A (zh) * 2022-08-23 2022-11-25 常州时创能源股份有限公司 一种硅片背抛光用添加剂及其应用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109971353B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN115323383B (zh) * 2022-08-09 2023-10-27 河南大学 离子液体缓蚀剂改性的水滑石复合涂层的制备方法及其在镁合金防腐中的应用
CN115572976B (zh) * 2022-11-11 2023-03-03 山东韩师傅新材料有限公司 一种用于海洋建筑金属钢结构的复合缓蚀剂及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070184661A1 (en) * 2006-02-08 2007-08-09 Jinru Bian Multi-component barrier polishing solution
CN101368068A (zh) * 2007-08-16 2009-02-18 江苏海迅实业集团股份有限公司 铜抛光中用的纳米二氧化硅磨料抛光液
CN101802981A (zh) * 2007-08-24 2010-08-11 霓达哈斯股份有限公司 研磨组合物
CN102051128A (zh) * 2009-11-06 2011-05-11 安集微电子（上海）有限公司 一种化学机械抛光液
CN102453440A (zh) * 2010-10-22 2012-05-16 安集微电子（上海）有限公司 一种化学机械抛光液

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11279534A (ja) * 1998-03-26 1999-10-12 Asahi Denka Kogyo Kk 半導体製品表面用研磨液組成物
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
KR20060117696A (ko) * 2005-05-13 2006-11-17 주식회사 동진쎄미켐 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물
JP2007227446A (ja) * 2006-02-21 2007-09-06 Fujifilm Corp バリア用研磨液及び研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
CN101659849A (zh) * 2008-08-29 2010-03-03 日本化学工业株式会社 半导体晶片研磨用组合物和研磨方法
CN101858043B (zh) * 2010-04-30 2012-07-04 湖北达雅化工技术发展有限公司 一种稳定的高比表面积硼硅溶胶的制备方法
JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070184661A1 (en) * 2006-02-08 2007-08-09 Jinru Bian Multi-component barrier polishing solution
CN101368068A (zh) * 2007-08-16 2009-02-18 江苏海迅实业集团股份有限公司 铜抛光中用的纳米二氧化硅磨料抛光液
CN101802981A (zh) * 2007-08-24 2010-08-11 霓达哈斯股份有限公司 研磨组合物
CN102051128A (zh) * 2009-11-06 2011-05-11 安集微电子（上海）有限公司 一种化学机械抛光液
CN102453440A (zh) * 2010-10-22 2012-05-16 安集微电子（上海）有限公司 一种化学机械抛光液

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115369405A (zh) * 2021-10-21 2022-11-22 江苏和达电子科技有限公司 一种双氧水系金属蚀刻液组合物及其使用方法
CN115369405B (zh) * 2021-10-21 2023-12-12 江苏和达电子科技有限公司 一种双氧水系金属蚀刻液组合物及其使用方法
CN115386302A (zh) * 2022-08-23 2022-11-25 常州时创能源股份有限公司 一种硅片背抛光用添加剂及其应用
CN115386302B (zh) * 2022-08-23 2023-06-02 常州时创能源股份有限公司 一种硅片背抛光用添加剂及其应用

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