WO2008040183A1 - Liquide de polissage chimico-mécanique pour matériau à faible coefficient diélectrique - Google Patents

Liquide de polissage chimico-mécanique pour matériau à faible coefficient diélectrique Download PDF

Info

Publication number
WO2008040183A1
WO2008040183A1 PCT/CN2007/002808 CN2007002808W WO2008040183A1 WO 2008040183 A1 WO2008040183 A1 WO 2008040183A1 CN 2007002808 W CN2007002808 W CN 2007002808W WO 2008040183 A1 WO2008040183 A1 WO 2008040183A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing liquid
acid
liquid according
polishing
abrasive particles
Prior art date
Application number
PCT/CN2007/002808
Other languages
English (en)
Chinese (zh)
Inventor
Judy Jianfen Jing
Peter Weihong Song
Jery Guodong Chen
Daisy Ying Yao
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CNA2007800291081A priority Critical patent/CN101541902A/zh
Publication of WO2008040183A1 publication Critical patent/WO2008040183A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for polishing a low dielectric material.
  • Patent Document US6046112 discloses an acidic slurry, using an abrasive Z r 2, with hydroxylamine to polishing low dielectric materials SOG.
  • the abrasives used are expensive and the production costs are high.
  • a polishing liquid for a low dielectric material comprising a nonionic surfactant having an HLB value greater than 7, which inhibits polishing of a low dielectric material. The rate has little effect on the removal rate of copper and bismuth.
  • the object of the present invention is to solve the problem of low removal rate of low dielectric material and difficult control of polishing selection under low pressure, and to provide a novel chemical mechanical polishing liquid of low dielectric material.
  • the polishing solution can have a higher removal rate of low dielectric material at lower pressure, for other Materials such as metallic copper (Cu), silicon oxide (Teos:), and tantalum (Ta)/nitride (TaN) barrier layers also have higher removal rates.
  • the polishing liquid of the present invention comprises abrasive particles, a corrosion inhibitor, an oxidizing agent and water, and is characterized by further comprising at least one speed increasing agent.
  • the speed increasing agent may be selected from one or more of the following: inorganic phosphoric acid and salts thereof, and organic phosphoric acid and salts thereof.
  • the inorganic phosphoric acid and salts thereof may be phosphoric acid, phosphorous acid, pyrophosphoric acid, trimellitic acid, hexametaphosphoric acid, tripolyphosphoric acid, polyphosphoric acid, and salts of the above acids.
  • the organic phosphoric acid and the salt thereof may be 2-phosphonium butyrate-1,2,4-tricarboxylic acid (PBTCA), ethylenediaminetetramethylenephosphonic acid (EDTMP), diethylenetriamine pentamethylphosphine Acid (DTPMP), hydroxyethylidene diphosphonic acid (HEDP), aminotrimethylenephosphonic acid ( ⁇ :), 2-hydroxyphosphonoacetic acid ( ⁇ :), polyaminopolyether methylene phosphonic acid ( ⁇ ) ), and the salt of the above acid.
  • the weight percentage of the speed increasing agent is preferably 0.001-2%, more preferably 0.01 to 1%.
  • the abrasive particles may be any abrasive particles in the prior art, such as silica, alumina, cerium oxide, titanium dioxide, silicon dioxide, aluminum-coated silica. Or high molecular polymer particles.
  • the weight percentage of the abrasive particles is preferably from 1 to 20%, more preferably from 2 to 15%.
  • the particle size of the abrasive particles is preferably from 20 to 150 nm, more preferably from 30 to 120 nm.
  • the corrosion inhibitor may be an azole compound.
  • the azole compound may be benzotriazole, 1-phenyl-5-mercapto-tetrazole, 2-mercapto-benzothiazole, benzimidazole, 2-mercaptobenzimidazole or 5-amino- 1H-tetrazole and the like.
  • the concentration of the corrosion inhibitor is preferably 0.001 to 1%, more preferably 0.01 to 0.5%.
  • the oxidizing agent may be hydrogen peroxide, urea peroxide, peracetic acid, potassium persulfate or ammonium persulfate.
  • concentration of the oxidizing agent is preferably from 0.001 to 5% by weight, more preferably 0.05% by weight.
  • the polishing liquid of the present invention is an acidic solution, and the pH is preferably 2.0 to 7.0, more preferably 2 ⁇ 0 ⁇ 5 ⁇ 0.
  • the polishing liquid of the present invention may further comprise a surfactant.
  • the surfactant is a nonionic surfactant, a cationic surfactant or an anionic surfactant.
  • the polishing liquid of the present invention may further comprise a pH adjusting agent, a viscosity modifier, an antifoaming agent or a bactericide, etc. to attain the effects of the present invention.
  • the polishing liquid of the present invention can be obtained by adding a certain amount of abrasive particles to a stirrer, adding a certain amount of deionized water and various components at a constant rate and mixing them uniformly, and adjusting them by a known method in the art.
  • the agent can be adjusted to the desired pH value.
  • the polishing liquid of the present invention preferably polishes a low dielectric material such as a carbon oxide (CDO), such as a carbon-doped silicon dioxide BD, or a low dielectric substrate material such as a porous material.
  • a low dielectric material such as a carbon oxide (CDO), such as a carbon-doped silicon dioxide BD, or a low dielectric substrate material such as a porous material.
  • the positive progress of the present invention is that it can have a higher removal rate of low dielectric materials at lower pressures, and other materials such as metallic copper (Cu), silicon oxide (Teos), and metal tantalum (y nitriding). Tan (TaN) barrier layers, etc. also have higher removal rates.
  • Cu metallic copper
  • Tios silicon oxide
  • y nitriding metal tantalum
  • Tan (TaN) barrier layers, etc. also have higher removal rates. The effect will be further illustrated by comparative experiments in the examples.
  • Example 1 is a polishing liquid of Comparative Example 1 and a polishing liquid 1 to 13 containing different kinds of speed increasing agents in Example 1 at a low polishing pressure (l, psi) for a low dielectric material BD (different carbon 2)
  • a low polishing pressure l, psi
  • BD low dielectric material
  • the polishing liquids 1 to 13 of Effect Example 1 were sequentially.
  • the polishing liquids 1 to 13 to which the speed increasing agent was added in Effect Example 1 can increase the removal rate of the low dielectric material (BD) to a different extent as compared with Comparative Example 1 in which no speed increasing agent was added.
  • Example 2 is a polishing liquid of Comparative Example 1 and a polishing liquid 14 to 19 containing effector phosphoric acid of different concentrations in Example 2 at a low polishing pressure (lpsi) for a low dielectric material BD (carbon doped two) The effect of the removal rate of silicon oxide).
  • a low polishing pressure Lpsi
  • BD carbon doped two
  • the removal rates of the low dielectric material BD (carbon doped silica) of the polishing liquid of Comparative Example 1 were sequentially.
  • the polishing liquids 14 to 19 in which the different concentrations of the accelerating agent phosphoric acid are added in the effect example 2 can increase the low dielectric material to different degrees (BD). The rate of removal.
  • the following polishing liquid is prepared by the squeezing method: a certain amount of abrasive granules is added to the agitator, a certain amount of deionized water and other components are added at a certain rate with stirring and uniformly mixed, and adjusted to the desired pH with KOH or HNO 3 .
  • the value is fine.
  • EDPMP ethylenediamine tetramethylene phosphonic acid
  • the low dielectric material BD carbon doped silica
  • the polishing liquids 1 to 13 of Effect Example 1 can increase the removal rate of the low dielectric material (BD) to various degrees.
  • Polishing material BD (low dielectric material, carbon doped silica); Polishing conditions: IPsi, polishing disc and polishing head speed 70/90 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher.
  • Polishing solution 18 10% Si0 2 (particle size 100nm), 0.2% benzotriazole, 1.5% phosphoric acid,
  • the low dielectric material BD carbon doped silica
  • the polishing liquids 14 to 19 in which the different concentrations of the accelerating agent phosphoric acid are added in the effect example 2 can increase the low dielectric material to different degrees (BD). The rate of removal.
  • Polishing material BD (low dielectric material, carbon-doped silica); Polishing conditions: lPsi, polishing disc and polishing head speed 70/90 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher 0
  • polishing liquid of the polishing liquid 20 to 22 in the effect example 3 is low for the low dielectric material BD (silica of carbon), metallic copper (Cu), silicon oxide (Teos), and metal tan (Ta). Polishing was carried out at a polishing pressure (lpsi), and the removal rate is shown in Table 1.
  • the polishing liquid 20-22 in the effect example 3 has a higher removal rate than the low dielectric material BD (carbon doped silica), and other materials such as metallic copper (Cu). ), silicon oxide (Teos:), metal tantalum (Ta) also have a higher removal rate.
  • Polishing material low dielectric material, carbon doped silica), metallic copper (Cu), silicon oxide (Teos), metal tan (Ta); polishing conditions: lPsi, polishing disc and polishing head speed 70/ 90 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher.
  • the raw materials and reagents used in the present invention are all commercially available products.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Liquide pour polissage chimico-mécanique d'un matériau à faible coefficient diélectrique, comprenant des particules abrasives, un inhibiteur de corrosion, un oxydant et de l'eau, caractérisé en outre en ce qu'il comprend au moins un type d'accélérateur. Ce liquide de polissage présente un taux d'enlèvement accru pour matériaux diélectriques sous une moindre pression, ainsi qu'un taux d'enlèvement accru pour d'autres matériaux tels que le cuivre (Cu), la silice (Teos), le tantale (ta)/nitrure de tantale (TaN) comme barrière, et analogues.
PCT/CN2007/002808 2006-09-29 2007-09-24 Liquide de polissage chimico-mécanique pour matériau à faible coefficient diélectrique WO2008040183A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007800291081A CN101541902A (zh) 2006-09-29 2007-09-24 用于抛光低介电材料的化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610116746.4 2006-09-29
CNA2006101167464A CN101153205A (zh) 2006-09-29 2006-09-29 用于抛光低介电材料的化学机械抛光液

Publications (1)

Publication Number Publication Date
WO2008040183A1 true WO2008040183A1 (fr) 2008-04-10

Family

ID=39255094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/002808 WO2008040183A1 (fr) 2006-09-29 2007-09-24 Liquide de polissage chimico-mécanique pour matériau à faible coefficient diélectrique

Country Status (2)

Country Link
CN (2) CN101153205A (fr)
WO (1) WO2008040183A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180005176A (ko) * 2015-05-08 2018-01-15 신에쓰 가가꾸 고교 가부시끼가이샤 합성석영 유리기판용 연마제 및 합성석영 유리기판의 연마방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101665663B (zh) * 2008-09-05 2014-03-26 安集微电子（上海）有限公司 一种化学机械抛光液
CN101684391A (zh) * 2008-09-26 2010-03-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
CN101696345B (zh) * 2009-10-21 2013-09-18 南昌大学 一种铝掺杂氧化铈抛光粉及其制备方法
CN102127372B (zh) * 2010-12-17 2013-10-23 天津理工大学 一种用于氧化钒化学机械抛光的纳米抛光液及其应用
CN103556142B (zh) * 2011-07-27 2016-05-11 中国科学院宁波材料技术与工程研究所 环保型铜及铜合金表面的钝化处理液及其钝化处理方法
CN103898512B (zh) * 2012-12-28 2018-10-26 安集微电子（上海）有限公司 一种用于铜互连的化学机械抛光液及工艺
KR102092350B1 (ko) * 2013-10-18 2020-03-24 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
CN104513982B (zh) * 2013-09-27 2019-01-22 东友精细化工有限公司 用于液晶显示器的阵列基板的制造方法
CN105950021B (zh) * 2016-07-19 2018-08-17 苏州溶煋新材料科技有限公司 一种用于蓝宝石基板抛光的氧化铝基抛光液及其制备方法
CN106244023A (zh) * 2016-08-23 2016-12-21 广安恒昌源电子科技有限公司 一种稀土抛光液及其制备方法
CN106566413A (zh) * 2016-10-28 2017-04-19 扬州翠佛堂珠宝有限公司 一种蓝宝石抛光液
CN107177848B (zh) * 2017-05-10 2018-04-24 广东伟业铝厂集团有限公司 一种铝材无烟抛光液
CN110809614A (zh) * 2017-07-04 2020-02-18 深圳市长宏泰科技有限公司 抛光剂、不锈钢件及其抛光处理方法
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
KR102142425B1 (ko) * 2019-10-21 2020-08-07 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
CN113308696B (zh) * 2021-05-28 2022-12-23 昆山市韩铝化学表面材料有限公司 一种铝合金两酸化学抛光用化抛光亮添加剂及抛光工艺

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1281023A (zh) * 1999-07-16 2001-01-24 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1370207A (zh) * 1999-08-13 2002-09-18 卡伯特微电子公司 抛光系统及其使用方法
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050204637A1 (en) * 2004-03-19 2005-09-22 Fujimi Incorporated Polishing composition and polishing method
CN1721493A (zh) * 2004-02-23 2006-01-18 Cmp罗姆和哈斯电子材料控股公司 用于化学机械平坦化的多步抛光液
CN1742065A (zh) * 2003-01-23 2006-03-01 罗门哈斯电子材料Cmp控股股份有限公司 可选择性阻隔金属的抛光液
CN1955248A (zh) * 2005-10-28 2007-05-02 安集微电子（上海）有限公司 钽阻挡层用化学机械抛光浆料

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1281023A (zh) * 1999-07-16 2001-01-24 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1370207A (zh) * 1999-08-13 2002-09-18 卡伯特微电子公司 抛光系统及其使用方法
CN1742065A (zh) * 2003-01-23 2006-03-01 罗门哈斯电子材料Cmp控股股份有限公司 可选择性阻隔金属的抛光液
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
CN1721493A (zh) * 2004-02-23 2006-01-18 Cmp罗姆和哈斯电子材料控股公司 用于化学机械平坦化的多步抛光液
US20050204637A1 (en) * 2004-03-19 2005-09-22 Fujimi Incorporated Polishing composition and polishing method
CN1955248A (zh) * 2005-10-28 2007-05-02 安集微电子（上海）有限公司 钽阻挡层用化学机械抛光浆料

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180005176A (ko) * 2015-05-08 2018-01-15 신에쓰 가가꾸 고교 가부시끼가이샤 합성석영 유리기판용 연마제 및 합성석영 유리기판의 연마방법
US10683437B2 (en) 2015-05-08 2020-06-16 Shin-Etsu Chemical Co., Ltd. Polishing agent for synthetic quartz glass substrate and method for polishing synthetic quartz glass substrate
KR102613230B1 (ko) 2015-05-08 2023-12-13 신에쓰 가가꾸 고교 가부시끼가이샤 합성석영 유리기판용 연마제 및 합성석영 유리기판의 연마방법

Also Published As

Publication number Publication date
CN101541902A (zh) 2009-09-23
CN101153205A (zh) 2008-04-02

Similar Documents

Publication Publication Date Title
WO2008040183A1 (fr) Liquide de polissage chimico-mécanique pour matériau à faible coefficient diélectrique
TWI748208B (zh) 用於降低的氧化物侵蝕的鎢化學機械研磨
WO2008025209A1 (fr) Pâte de polissage pour matériau faiblement diélectrique
KR101325333B1 (ko) 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물
JP5472585B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
WO2007029465A1 (fr) Agent de polissage, procédé de polissage de surface à polir, et procédé de fabrication de dispositif à circuit intégré semi-conducteur
TWI721074B (zh) 一種化學機械拋光液及其應用
WO2007116770A1 (fr) Dispersion aqueuse pour polissage chimico-mécanique, procédé de polissage chimico-mécanique et kit de préparation de la dispersion aqueuse pour polissage chimico-mécanique
WO2011072494A1 (fr) Liquide de polissage mécano-chimique
WO2011099313A1 (fr) Solution de polissage cmp et procédé de polissage
WO2007000852A1 (fr) Abrasif et processus pour produire une unité de circuit intégré à semi-conducteurs
JP5408437B2 (ja) 化学機械研磨用水系分散体、および該分散体を調製するためのキット、該キットを用いた化学機械研磨用水系分散体の調製方法、ならびに半導体装置の化学機械研磨方法
JP2008280229A (ja) 表面修飾二酸化ケイ素粒子の製造法及び研磨液
JP5144516B2 (ja) 砥材を有しない研磨システム
TW201915132A (zh) 用於鈷的化學機械拋光方法
TW202026376A (zh) 用於金屬化學機械拋光之組合物及方法
WO2016107414A1 (fr) Application de composition dans le polissage de couche barrière
CN103897602A (zh) 一种化学机械抛光液及抛光方法
JP5447789B2 (ja) 化学機械研磨用水系分散体および該分散体の調製方法、ならびに化学機械研磨方法
JP4657408B2 (ja) 金属膜用研磨剤
CN102137904B (zh) 一种化学机械抛光液
JP2005518089A (ja) 金属基材の化学機械研磨法
CN102477259A (zh) 一种化学机械抛光浆料
JP5344136B2 (ja) 化学機械研磨用水系分散体、および該分散体の調製方法、ならびに半導体装置の化学機械研磨方法
TW200808947A (en) Gallium and chromium ions for oxide removal rate enhancement

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780029108.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07816424

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07816424

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)